WO2010149545A1 - Verfahren zur herstellung von oligohalogensilanen - Google Patents
Verfahren zur herstellung von oligohalogensilanen Download PDFInfo
- Publication number
- WO2010149545A1 WO2010149545A1 PCT/EP2010/058426 EP2010058426W WO2010149545A1 WO 2010149545 A1 WO2010149545 A1 WO 2010149545A1 EP 2010058426 W EP2010058426 W EP 2010058426W WO 2010149545 A1 WO2010149545 A1 WO 2010149545A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- weight
- silicon
- metal
- oligohalogen
- carrier gas
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
Definitions
- the invention relates to the preparation of Oligohalogensilanen, from a Geraisch of silicon and halide of metal.
- Oligohalosilanes are valuable precursors for the electronics / photovoltaic sector.
- starting source / raw material for higher chlosilanes is e.g. the process gas stream obtained in the Siemens process for the production of polycrystalline Si, in question. This is described for example in JP 2007284280 A2.
- the Siemens process uses thin silicon rods that are in one
- Gas atmosphere be heated from trichlorosilane and hydrogen. From the trichlorosilane then gradually deposits silicon on the rods, which grow in this way to thicker pillars of poly-silicon.
- the invention relates to a process for the preparation of oligohalosilanes which are selected from oligohalosilanes of the general formulas (1) and (2)
- a mixture containing silicon and halide of metal selected from Ti, Zr, Hf, V, Nb, Mo, W, Fe, Co, Ni, Cu, Cd, In, Sn, P, Sb, Bi, S, Se, Te and Pb and mixtures thereof, at a temperature of -125 ° C to 1100 0 C is reacted and the Oligohalogensilane formed with a carrier gas which is selected from N 2 , noble gases, CH 3 Cl, HCl, CO 2 , CO , H 2 and SiCl 4 are removed, wherein
- X is selected from Cl, Br and J, n is an integer from 2 to 10 and m is an integer from 3 to 10.
- the process provides easy access to the oligochlorosilanes.
- Low cost starting materials can be used.
- the silicon used in the process preferably contains at most 5% by weight, more preferably at most 2% by weight, in particular at most 1% by weight, of other elements than impurities.
- the impurities which constitute at least 0.01% by weight are preferably elements selected from Fe, Ni, Al, Ca, Cu, Zn, Sn, C, V, Mn, Ti, Cr, B, P, O.
- Silicon is used as it is suitable for use in Rochow method, for example described in DE 4303766 Al, which is incorporated by reference.
- the metal preferably melts at least the range from -125 0 C, especially at least 5O 0 C and preferably at most 1 050 0 C, particularly preferably not more than 800 0 C, particularly at most 600 0 C, particularly preferably at most 400 0 C.
- halogen X chlorine is preferred.
- halogen compounds of the metals Fe, V, Mo, Ni, Cu, Cd, Sn, P, Sb, Bi, Pb in particular of Cu, Sn, P, Fe, V, Mo, Cd.
- the additional presence of other metal halides is advantageous, especially of other metal halides, which inhibit the formation of eutectic melts with the metal halides of Ti, Zr, Hf, V, Nb, Mo, W, Fe, Co, Ni, Cu, Cd, In, Sn, P, Sb, Bi, S, Se, Te and Pb.
- Preferred other metal halides are the halides Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Zn, Al, Ga, especially the chlorides.
- Particularly preferred other metal halides are the chlorides of the 1st and 2nd main group and Zn, Al, Ga, in particular of Zn, Al, Ga, Mg, Ca, Sr, Cs.
- the Anlagensstetnperatur is at least 15O 0 C, in particular at least 25O 0 C and preferably at most 800 0 C, particularly preferably at most 600 0 C, in particular at most 450 ° C.
- Carrier gases are used. If noble gases are used as the carrier gas, helium and argon are preferred.
- the carrier gas is passed over the mixture containing silicon and halide of metal, or the carrier gas flows through the mixture.
- the carrier gas is on
- Process temperature is heated before it removes the Oligohalogensilane from the mixture containing silicon and halide of metal.
- the carrier gas is selected from N 2, noble gases, CO 2, CO and SiCl 4, silicon halides, in particular SiX 4 and HSiX 3, are formed as by-product. If the carrier gas is selected from HCl and H2, by-products are silicon halides, some of which contain hydrogen. If the carrier gas is CH3Cl, by-products are methylchlorosilanes.
- the oligohalosilanes of the general formulas (1) and (2) may be linear or branched.
- the oligohalogenosilanes of the general formula (2) contain a cycle.
- Oligohalosilanes are preferably formed in which n has the values 2 to 6, in particular 2, 3 and 4, and m has the values 4, 5 or 6, in particular 2, 3 and 4.
- Parts by silicon in particular at least 1, preferably at least 0.1, preferably at least 0.5 wt. -Parts parts by wt., And preferably at most 50 wt. Parts by weight, particularly preferably at most 15. -Parts 0 C, in particular at most 6 parts by weight metal halide used.
- the method can be carried out in all heatable devices which have a mixing behavior, can be overflowed or charged with a carrier gas and reach the necessary temperature level. Charging and emptying of the devices is preferably carried out under the carrier gas.
- the laden with Oligohalogensilanen and by-products carrier gas stream is preferably cooled via a Kondensantionlane and obtained in this way the Oligohalogensilane.
- the mixture of oligohalosilanes and by-products is preferably separated by distillation into its different fractions.
- devices for example, rotary kiln, screw heat exchangers, cone mixers, vertical and horizontal mixers and fluidized bed dryers are suitable.
- the process design can be performed both continuously and in batch.
- the weight ratio of Cu metal to Zn is 10 to 1 and the Sn content based on the total Mellgehalt is 100 ppm.
- Example 2 The procedure described under Example 1 is repeated, except that now the mechanical mixing consisted of 98.35% by weight of Si and 1.65% by weight of CuCl / ZnC.sub.5 / stannous chloride.
- the weight ratio of Cu metal to Zn or Sn is as indicated in Example 1.
- the yield of oligochlorosilanes is shown in Table 1, the most important constituents of the condensate are listed in Table 2.
- Example 4 The procedure described in Example 1 is repeated, with the exception that the mechanical mixing of 96.7 wt .-% Si and 3.3 wt .-% duration.
- the weight ratio of Cu metal to Zn or Sn is as indicated in Example 1.
- the yield of oligochlorosilanes is shown in Table 1, the most important constituents of the condensate are listed in Table 2.
- Example 2 The procedure described in Example 1 is repeated, with the exception that 934 g of Si and 66 g of CuCl / ZnCl 2 / tin chloride are now used and fed continuously to the rotary kiln. The emptying of the reacted mixture from the rotary tube is also carried out continuously. The addition or removal is 500 g mass per h. That After 2 h the experiment is completed and the rotary kiln completely emptied. The weight ratio of Cu metal to Zn or Sn is as indicated in Example 1. The obtained yield of oligochlorosilanes is shown in Table 1, the most important constituents of the condensate are listed in Table 2.
- Example 2 The procedure described in Example 1 is repeated, with the exception that now the mechanical mixing of 86.8 wt .-% Si and 13.2 wt .-% consists.
- Example 2 The weight ratio of Cu metal to Zn or Sn is as indicated in Example 1.
- the yield of oligochlorosilanes is shown in Table 1, the most important constituents of the condensate are listed in Table 2.
- Example 6 The procedure described under Example 1 is repeated with the exception that the mixture used consists of 73.6% by weight of Si and 26.4% by weight of CuCl / ZnCl 2 / tin chloride.
- the details of the metal chloride concentration in% by weight in Table 1 relate to the reaction mixture consisting of silicon and metal chloride mixture.
- the data on the yield of oligochlorosilanes in% by weight relate to the metal chloride mixture used in the reaction mixture,
- Example Metal chloride concentration Yield Oligochlorosilanes in% by weight in% by weight
- Metal chloride composition of the concentration of chlorosilane mixture in% by weight
- Example 2 The procedure described in Example 1 is repeated, with the exception that the mixture used consists of 94% by weight of Si and 6% by weight of CuGl.
- the yield of oligochlorosilanes in this example is 22.3% by weight, based on the CuCl used.
- Example 2 The procedure described in Example 1 is repeated, with the exception that the mechanical mixing of 98.5 wt .-% silicon and 1.5 wt .-% of a
- Metal chloride mixture consisting of (NH 4 ) 2 [SnCIg] and ZnCl 2 in the ratio 8 to 2 at 280 0 C for a period of 20 min thermally treated. Thereafter, the reaction of the chloride mixture is completed with the Si, which can be seen by the fact that forms no more condensate in the cooler.
- the analysis shows a yield of Oligochlorsilanen of 22.3 wt .-%, based on the amount of metal halide mixture used.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012516646A JP2012530668A (ja) | 2009-06-26 | 2010-06-16 | オリゴハロゲンシランの製造方法 |
KR1020117030733A KR101389882B1 (ko) | 2009-06-26 | 2010-06-16 | 올리고할로겐 실란의 제조 방법 |
EP10725456A EP2445836A1 (de) | 2009-06-26 | 2010-06-16 | Verfahren zur herstellung von oligohalogensilanen |
CN201080028662XA CN102803140A (zh) | 2009-06-26 | 2010-06-16 | 用于生产低聚卤代硅烷的方法 |
US13/379,466 US20120107217A1 (en) | 2009-06-26 | 2010-06-16 | Method for producing oligohalogen silanes |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009027241A DE102009027241A1 (de) | 2009-06-26 | 2009-06-26 | Verfahren zur Herstellung von Oligohalogensilanen |
DE102009027241.0 | 2009-06-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010149545A1 true WO2010149545A1 (de) | 2010-12-29 |
Family
ID=42536386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2010/058426 WO2010149545A1 (de) | 2009-06-26 | 2010-06-16 | Verfahren zur herstellung von oligohalogensilanen |
Country Status (7)
Country | Link |
---|---|
US (1) | US20120107217A1 (de) |
EP (1) | EP2445836A1 (de) |
JP (1) | JP2012530668A (de) |
KR (1) | KR101389882B1 (de) |
CN (1) | CN102803140A (de) |
DE (1) | DE102009027241A1 (de) |
WO (1) | WO2010149545A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113508091B (zh) * | 2019-03-05 | 2024-05-03 | 株式会社德山 | 氯硅烷类的制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59232910A (ja) | 1983-06-17 | 1984-12-27 | Mitsui Toatsu Chem Inc | 高級塩素化ケイ素の製造方法 |
DE3623493A1 (de) * | 1985-07-11 | 1987-01-15 | Toa Gosei Chem Ind | Verfahren zur herstellung von siliciumhexachlorid |
EP0283905A2 (de) * | 1987-03-23 | 1988-09-28 | Mitsubishi Kinzoku Kabushiki Kaisha | Verfahren zur Herstellung von Chlorpolysilanen |
DE4303766A1 (de) | 1993-02-09 | 1994-08-11 | Wacker Chemie Gmbh | Verfahren zur Herstellung von Methylchlorsilanen |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0829930B2 (ja) * | 1988-02-26 | 1996-03-27 | 三菱マテリアル株式会社 | クロロポリシランの製造方法 |
KR940010290B1 (ko) * | 1991-12-24 | 1994-10-22 | 한국과학기술연구원 | 비스실릴메탄 및 그들의 제조방법 |
JP3708648B2 (ja) * | 1995-12-25 | 2005-10-19 | 株式会社トクヤマ | トリクロロシランの製造方法 |
JP2006169012A (ja) | 2004-12-13 | 2006-06-29 | Sumitomo Titanium Corp | ヘキサクロロジシラン及びその製造方法 |
JP4594271B2 (ja) | 2006-04-14 | 2010-12-08 | 株式会社大阪チタニウムテクノロジーズ | 六塩化二珪素の製造方法 |
DE102007000841A1 (de) | 2007-10-09 | 2009-04-16 | Wacker Chemie Ag | Verfahren zur Herstellung von hochreinem Hexachlordisilan |
-
2009
- 2009-06-26 DE DE102009027241A patent/DE102009027241A1/de not_active Withdrawn
-
2010
- 2010-06-16 US US13/379,466 patent/US20120107217A1/en not_active Abandoned
- 2010-06-16 JP JP2012516646A patent/JP2012530668A/ja active Pending
- 2010-06-16 CN CN201080028662XA patent/CN102803140A/zh active Pending
- 2010-06-16 EP EP10725456A patent/EP2445836A1/de not_active Withdrawn
- 2010-06-16 WO PCT/EP2010/058426 patent/WO2010149545A1/de active Application Filing
- 2010-06-16 KR KR1020117030733A patent/KR101389882B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59232910A (ja) | 1983-06-17 | 1984-12-27 | Mitsui Toatsu Chem Inc | 高級塩素化ケイ素の製造方法 |
DE3623493A1 (de) * | 1985-07-11 | 1987-01-15 | Toa Gosei Chem Ind | Verfahren zur herstellung von siliciumhexachlorid |
EP0283905A2 (de) * | 1987-03-23 | 1988-09-28 | Mitsubishi Kinzoku Kabushiki Kaisha | Verfahren zur Herstellung von Chlorpolysilanen |
DE4303766A1 (de) | 1993-02-09 | 1994-08-11 | Wacker Chemie Gmbh | Verfahren zur Herstellung von Methylchlorsilanen |
Non-Patent Citations (2)
Title |
---|
DATABASE WPI Week 198941, Derwent World Patents Index; AN 1989-296810, XP002597151 * |
J.R.JOINER: "nSystematic Preparation of Chloropolysilanes and Chlorosilylgermanes", 1972, TUFTS UNIVERSITY |
Also Published As
Publication number | Publication date |
---|---|
KR101389882B1 (ko) | 2014-04-29 |
US20120107217A1 (en) | 2012-05-03 |
DE102009027241A1 (de) | 2010-12-30 |
KR20120027382A (ko) | 2012-03-21 |
EP2445836A1 (de) | 2012-05-02 |
JP2012530668A (ja) | 2012-12-06 |
CN102803140A (zh) | 2012-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE842059C (de) | Verfahren zur Herstellung von Organosiliziumhalogeniden | |
EP2655254B1 (de) | Verfahren zur herstellung von hydridosilanen | |
EP1370490B1 (de) | Verfahren zur herstellung von chlorsilanen | |
DE1054436B (de) | Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades | |
EP4065512B1 (de) | Verfahren zur entfernung einer verunreinigung aus einem chlorsilangemisch | |
DE69631944T2 (de) | Verfahren zur Überwachung der Verteilung der Reaktionsprodukte bei der Alkylhalogensilanherstellung | |
EP2350101A1 (de) | Verfahren zur herstellung von alkylchlorsilanen durch umlagerungsreaktionen | |
EP2445836A1 (de) | Verfahren zur herstellung von oligohalogensilanen | |
EP0671402B1 (de) | Verfahren zur Herstellung von Methylchlorsilanen | |
DE936445C (de) | Verfahren zur Herstellung von Vinylchlorsilanen | |
DE69916223T2 (de) | Redistribution von Silalkylene in ein Alkylreiche Silalkylen-enthaltende Rückstände | |
DE3425424C2 (de) | ||
DE69907295T2 (de) | Verfahren zur Herstellung von Alkylhalogensilanen | |
EP0759438B1 (de) | Verfahren zur Herstellung von Dimethyldichlorsilan | |
EP1048670B1 (de) | Verfahren zur Herstellung von Organochlorsilanen | |
DE1291324B (de) | Verfahren zur Reinigung von Halogensilanen | |
EP2245036B1 (de) | Verfahren zur herstellung von alkylchlorsilanen aus den rückständen der direktsynthese von alkylchlorsilanen | |
DE102004059380B4 (de) | Verfahren zur Herstellung von Organosilanen | |
DE4312494A1 (de) | Verfahren zur Herstellung von Methylchlorsilanen | |
DE10057483A1 (de) | Verfahren zur Entfernung von Aluminiumtrichlorid aus Chlorsilanen | |
WO2012136487A1 (de) | Verfahren zur herstellung einer kontaktmasse | |
WO2020114609A1 (de) | Verfahren zur verminderung des gehalts an borverbindungen in halogensilan enthaltenden zusammensetzung | |
EP2945955A1 (de) | Verfahren zur herstellung von alkylchlorsilanen durch umlagerungsreaktionen | |
DE19825767A1 (de) | Verfahren zur Herstellung von Alkylhalogensilanen | |
DE3312501A1 (de) | Verfahren zur herstellung von monohydrogentrihalogensilan aus dem aus der herstellung von organohalogensilanen mittels eines metallkatalysierten direktverfahrens erhaltenen rueckstandssilicium |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080028662.X Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10725456 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13379466 Country of ref document: US Ref document number: 2010725456 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20117030733 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012516646 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |