WO2010137857A2 - Half tone mask and manufacturing method of the same - Google Patents

Half tone mask and manufacturing method of the same Download PDF

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Publication number
WO2010137857A2
WO2010137857A2 PCT/KR2010/003307 KR2010003307W WO2010137857A2 WO 2010137857 A2 WO2010137857 A2 WO 2010137857A2 KR 2010003307 W KR2010003307 W KR 2010003307W WO 2010137857 A2 WO2010137857 A2 WO 2010137857A2
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WO
WIPO (PCT)
Prior art keywords
half permeation
permeation
blocking layer
substrate
area
Prior art date
Application number
PCT/KR2010/003307
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English (en)
French (fr)
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WO2010137857A3 (en
Inventor
Moosung Kim
Original Assignee
Lg Innotek Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co., Ltd. filed Critical Lg Innotek Co., Ltd.
Priority to CN201080023383.4A priority Critical patent/CN102449735B/zh
Priority to JP2012512963A priority patent/JP5654577B2/ja
Publication of WO2010137857A2 publication Critical patent/WO2010137857A2/en
Publication of WO2010137857A3 publication Critical patent/WO2010137857A3/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Definitions

  • the present invention relates to a half tone mask and a manufacturing method of the same configured to have multiple half permeation units by using a single half permeation material.
  • a liquid crystal display controls the light transmittance of a liquid crystal having a dielectric anisotropy using an electric field to thereby display a picture.
  • the LCD includes a liquid crystal display panel for displaying a picture using a liquid crystal cell matrix and a driving circuit to drive the liquid crystal display panel.
  • a related art liquid crystal display panel includes a color filter substrate and a thin film transistor substrate that are joined to each other having a liquid crystal therebetween.
  • the color filter substrate includes a black matrix, a color filter and a common electrode that are sequentially provided on an upper glass substrate.
  • the thin film transistor substrate includes a thin film transistor and a pixel electrode provided for each cell defined by a gate line crossing a data line on a lower glass substrate.
  • the thin film transistor applies a data signal from the data line to the pixel electrode in response to a gate signal from the gate line.
  • the pixel electrode formed from a transparent conductive layer supplies a data signal from the thin film transistor to drive the liquid crystal.
  • the thin film transistor substrate is formed through many mask processes, where, processes of forming a source electrode and a drain electrode and a semiconductor pattern are employed by a single half tone mask to reduce the number of mask processes.
  • the half tone mask includes a blocking area blocking ultraviolet, a half permeation area partially transmissive of the ultraviolet and a transmissive area allowing the ultraviolet to be transmissive therethrough.
  • the half permeation area of the half tone mask may be formed with multiple half permeation units each having a different light transmittance.
  • half permeation materials each having a different transmittance are employed.
  • 3 half permeation materials each having different transmittances are needed in order to implement multiple half permeation units having more than 3 mutually different transmittances.
  • the present invention is disclosed to obviate the above-mentioned problem, and an advantage of the present invention is to provide a half tone mask and a manufacturing method of the same configured to have multiple half permeation units by using a single half permeation material.
  • a half tone mask comprising: a substrate; a transmissive area formed on the substrate for transmitting irradiated light of a predetermined wavelength range; and a half permeation area formed on the substrate with multiple half permeation units having a plurality of mutually different transmittances using the predetermined wavelength range according to thickness of the half permeation material or the number of stacked layers.
  • the half tone mask may further include a blocking area having a blocking layer formed between at least two half permeation materials.
  • the half tone mask may further include a blocking area having a blocking layer formed at an upper surface or a bottom surface of the at least two half permeation materials.
  • the half permeation material may include as a main element one of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al 2 O 3 or Si 3 N 4, or a combined material mixed with at least the two or more elements, or includes the single main element or the combined material added with at least one of Cox, Ox, Nx, Cx, Fx, and Bx to the single main element or the combined material, where suffix x is a natural number and defines the number of each chemical element.
  • the half permeation area may include a first half permeation part formed on the substrate with the half permeation material to allow light to be transmissive as much as X %, a second half permeation part formed with a thicker half permeation material to allow light to be transmissive as much as Y %, and a third half permeation part stacked with two layers of the half permeation material to allow light to be transmissive as much as Z %.
  • a manufacturing method of a half tone mask comprising: stacking on a substrate a first half permeation material, a blocking layer and a photo-resist, exposing and developing the photo-resist to allow a necessary area of the blocking layer to be exposed, and sequentially removing the exposed blocking layer and the first half permeation material; exposing and developing the photo-resist and removing the exposed blocking layer so as to expose the necessary area of the blocking layer after stacking the photo-resist on the substrate formed with the first half permeation material and the blocking layer; sequentially stacking a second half permeation material and photo-resist after removing the exposed blocking layer to form a blocking area formed with a blocking layer between the first and second half permeation materials; exposing and developing the photo-resist so as to expose a necessary area of the second half permeation material and sequentially removing the exposed second half permeation material and the blocking layer; and forming a half permeation area including a first half permeation material
  • the first and second half permeation materials are formed with the same half permeation material, and each of the first and second half permeation materials has a different thickness.
  • the half permeation material is a material having as a main element one of Cr, Si, Mo, Ta, or Al, or is a combined material mixed with at least the two or more elements, or is a material added with at least one of Cox, Ox, Nx to the main element.
  • the present invention is advantageous in that a half tone mask according to the present invention uses a single half permeation material to have a half permeation area having multiple half permeation parts having more than 3 mutually different transmittances, and a blocking area formed with a blocking layer between at least two half permeation materials, whereby multiple half permeation parts having more than 3 mutually different transmittances using a single half permeation material to dispense with a half permeation material having multiple transmittances, and to implement a half tone mask having multiple half permeation parts without increasing the number of half permeation materials.
  • FIG. 1 is a cross-sectional view illustrating a half tone mask according to an exemplary embodiment of the present invention.
  • FIGS. 2 to 12 are cross-sectional views illustrating a manufacturing method of a half tone mask according to the exemplary embodiment of FIG.1.
  • FIG. 1 is a cross-sectional view illustrating a half tone mask according to an exemplary embodiment of the present invention.
  • a half tone mask (100) includes a blocking area (S1) on a substrate (102), half permeation areas (S3, S4, S5) having multiple half permeation parts and a transmissive area (S2).
  • the substrate (102) may be a transparent substrate, for example, a quartz, that is capable of completely transmitting irradiated light of a predetermined wavelength range.
  • the substrate is not limited to the quartz but may be any material that can transmit light.
  • the half permeation areas (S3, S4, S5) may include multiple half permeation parts to transmit light irradiated to the substrate in a predetermined wavelength range in mutually different transmittances.
  • the half permeation areas (S3, S4, S5) may be formed by photo-resist patterns each having a different thickness after a development process by partially transmitting the ultraviolet in the exposing process of the photo-resist process.
  • the half permeation areas (S3, S4, S5) may include multiple half permeation parts each having a different transmittance by using at least three or more half permeation materials. That is, the half permeation areas (S3, S4, S5) may include a first half permeation part (S3) formed on the substrate with a first half permeation material (112) to allow light to be transmissive as much as X %, a second half permeation part (S2) formed with a second half permeation material (114) to allow light to be transmissive as much as Y %, and a third half permeation part (S4) stacked with first and second half permeation materials ( 112, 114) to allow light to be transmissive as much as Z %.
  • each of the first and second half permeation materials (112, 114) is formed with the same half permeation material, and the first half permeation material (112) formed on the first half permeation part (S3) is thicker than the second half permeation material (114) formed on the second half permeation part (S2), where each of the X%, Y% and Z% defines a light transmittance capable of transmitting irradiated light in the range of 10 to 90%.
  • the half tone mask may form multiple half permeation parts having more than 3 mutually different transmittances according to thickness of half permeation material or the number of stacked layers using a single half permeation material.
  • the first and second half permeation materials (112, 114) may be a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where x is a natural number that changes according to combination of elements.
  • a composition of the first and second half permeation materials (112, 114) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive.
  • the composition of the first and second half permeation materials (112, 114), for example, the stacked half permeation materials (112, 114) may be a composition of any one from a group of Cr x O y , Cr x CO y , Cr x O y N z , Si x O y , Si x O y N z , Si x CO y , Si x CO y N z , Mo x Si y , Mo x O y , Mo x O y N z , Mo x CO y , Mo x O y N z , Mo x CO y , Mo x O y N z , Mo x Si y O y O z , Mo x Si y O z , Mo x Si
  • the half permeation area may include the first, second and third half permeation parts each having a different transmittance, and a first to n th half permeation parts may be formed using a single half permeation material.
  • the first blocking area (S1) is left with a photo-resist pattern after development process by blocking the ultraviolet during exposing process.
  • the blocking area (S1) is sequentially stacked on the substrate (102) with the first half permeation material (112), a blocking layer (110) and the second half permeation material (114) to thereby block the ultraviolet. That is, the blocking layer (110) of the blocking area (S1) is formed between the first and second half permeation materials.
  • the first half permeation material (112), the blocking layer (110) and the photo-resist (120) are sequentially stacked on the substrate (102) by sputtering, chemical vapor deposition and the like.
  • the first half permeation materials (112) is preferably a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where suffix x is a natural number that changes according to main elements that are combined.
  • a composition of the first half permeation materials (112) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive.
  • the composition of the first half permeation materials (112) may be a composition of any one from a group of Cr x O y , Cr x CO y , Cr x O y N z , Si x O y , Si x O y N z , Si x CO y , Si x CO y N z , Mo x Si y , Mo x O y , Mo x O y N z , Mo x CO y , Mo x O y N z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z N Mo x Si y CO z N, Mo x Si y CO z , Ta x O y ,
  • the blocking layer (110) may be formed with a material capable of blocking the ultraviolet, and for example, the blocking layer may be formed by a film formed with Cr and Cr x O y .
  • the photo-resist (120) formed on the blocking layer (110) is irradiated by laser beam and drawn, and the drawn photo-resist (120) is developed to allow the blocking layer (110) to be exposed at a position where the transmissive area (S5) and the second half permeation part (S2) are supposed to be formed.
  • the blocking layer (110) exposed using the photo-resist (120) remaining on the blocking layer (110) as a mask is removed by etching process to expose the first half permeation material (112).
  • the first half permeation material (112) exposed by using the photo-resist (112) left on the blocking layer (110) as a mask is removed by etching process.
  • the photo-resist (120) remaining on the blocking layer (110) is removed by stripping process.
  • a position where the blocking area (S1) and the first and third half permeation areas (S3, S4) are supposed to be formed are stacked with the first half permeation material (112) and the blocking layer (110), and a position where the transmissive area (S5) and the second half permeation area (S2) are supposed to be formed is where the substrate (102) is exposed.
  • the photo-resist (120) is stacked on the substrate (102) formed with the first half permeation material (112) and the blocking layer (110), and laser beam is irradiated on the photo-resist (120) and drawn. Thereafter, the drawn photo-resist (120) is developed to allow the blocking layer (110) to be exposed at a position where the third half permeation area (S4) is supposed to be formed.
  • the exposed blocking layer (110) is removed by etching process using the photo-resist (120) remaining on the substrate (102) formed with the first half permeation material (112) and the blocking layer (110) as a mask. Successively, the photo-resist (120) left on the substrate (102) is removed by stripping process.
  • the second half permeation material (114) and the photo-resist (120) are sequentially stacked on the substrate (102) by sputtering, chemical vapor deposition and the like.
  • the second half permeation material (114) may be formed with the same material as that of the first half permeation material, but thicker than the first half permeation material (112), such that each of the first and second half permeation material may have a different transmittance.
  • the second half permeation materials (114) is preferably a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where suffix x is a natural number that changes according to main elements that are combined.
  • a composition of the second half permeation materials (114) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive.
  • the composition of the first half permeation materials (114) may be a composition of any one from a group of Cr x O y , Cr x CO y , Cr x O y N z , Si x O y , Si x O y N z , Si x CO y , Si x CO y N z , Mo x Si y , Mo x O y , Mo x O y N z , Mo x CO y , Mo x O y N z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z N Mo x Si y CO z N, Mo x Si y CO z , Ta x O y ,
  • the photo-resist (120) formed at a position where the transmissive area (S5) and the first half permeation area (S3) are supposed to be formed is drawn and developed, whereby the second half permeation material (114) is exposed.
  • the photo-resist (120) formed at a position where the transmissive area (S5) and the first half permeation area (S3) are supposed to be formed is irradiated by laser beam and drawn, where the drawn photo-resist area is developed and removed.
  • the photo-resist (120) is left on the second half permeation material (114) formed at a position where the blocking area (S1), the second half permeation part (S2) and the third half permeation part (S4) are supposed to be formed, and the second photo-resist (120) is exposed at a position where the transmissive area (S5) and the first half permeation part (S3) are supposed to be formed.
  • the second half permeation material (114) exposed with the photo-resist (120) left on the second half permeation material (114) as masks is removed, whereby the transmissive area (S5) is formed with the substrate (102) exposed, and the blocking layer (110) is exposed at a position where the first half permeation part (S3) is supposed to be formed.
  • removal of the blocking layer (110) exposed on the substrate (102) serves to form the first half permeation part (S3) formed with the first half permeation material (112).
  • the photo-resist (120) left on the substrate (102) is removed by the stripping process, whereby the blocking area (S1) stacked with the blocking layer (110), the first half permeation material (112) and the second half permeation material (114) is formed on the substrate (102), the first half permeation part (S3) formed with the first half permeation material (112) is formed on the substrate (102), the first half permeation part (S4) formed with the second half permeation material (114) is formed on the substrate (102), the third half permeation part (S2) stacked with the first half permeation material (112) and the second half permeation material (114) is formed on the substrate (102), and the transmissive area (S5) exposed with the substrate (102) is formed.
  • the blocking area (S1) stacked with the blocking layer (110), the first half permeation material (112) and the second half permeation material (114) is formed on the substrate (102)
  • the present invention is industrially applicable in that a half tone mask according to the present invention uses a single half permeation material to have a half permeation area having multiple half permeation parts having more than 3 mutually different transmittances, and a blocking area formed with a blocking layer between at least two half permeation materials, whereby multiple half permeation parts having more than 3 mutually different transmittances using a single half permeation material to dispense with a half permeation material having multiple transmittances, and to implement a half tone mask having multiple half permeation parts without increasing the number of half permeation materials.

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
PCT/KR2010/003307 2009-05-26 2010-05-26 Half tone mask and manufacturing method of the same WO2010137857A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201080023383.4A CN102449735B (zh) 2009-05-26 2010-05-26 半色调掩模及其制造方法
JP2012512963A JP5654577B2 (ja) 2009-05-26 2010-05-26 ハーフトーンマスク及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0045847 2009-05-26
KR1020090045847A KR101095539B1 (ko) 2009-05-26 2009-05-26 하프톤 마스크 및 이의 제조 방법

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WO2010137857A2 true WO2010137857A2 (en) 2010-12-02
WO2010137857A3 WO2010137857A3 (en) 2011-03-03

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JP (1) JP5654577B2 (zh)
KR (1) KR101095539B1 (zh)
CN (1) CN102449735B (zh)
TW (1) TWI434134B (zh)
WO (1) WO2010137857A2 (zh)

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JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法

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Publication number Publication date
CN102449735B (zh) 2016-01-20
JP2012528354A (ja) 2012-11-12
KR20100127412A (ko) 2010-12-06
TW201107877A (en) 2011-03-01
KR101095539B1 (ko) 2011-12-19
TWI434134B (zh) 2014-04-11
WO2010137857A3 (en) 2011-03-03
JP5654577B2 (ja) 2015-01-14
CN102449735A (zh) 2012-05-09

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