TW201107877A - Half tone mask and manufacturing method of the same - Google Patents

Abstract

The present invention relates to a half tone mask and a manufacturing method of the same configured to have multiple half permeation units by using a single half permeation material, wherein the half tone mask comprises: a substrate; a transmissive area formed on the substrate for transmitting irradiated light of a predetermined wavelength range; and a half permeation area formed on the substrate with multiple half permeation units having a plurality of mutually different transmittances using the predetermined wavelength range according to thickness of the half permeation material or the number of stacked layers.

Description

201107877 VI. Description of the Invention: [Technical Area to which the Invention Is Applicable] The present invention claims priority to Korean Patent No. 10-2009-0045847 filed on May 26, 2009. This is incorporated herein by reference. SUMMARY OF THE INVENTION The present invention is directed to a halftone reticle and a method of fabricating a halftone reticle having a plurality of semi-transparent cells by using a single-half penetrating material. ^ [Prior Art] 〇 〇 In general, the liquid crystal display n(10)) produces an electric field to control the transmittance of dielectric anisotropy liquid crystal to display the surface. To achieve this, the LCD includes: - a liquid crystal display panel that utilizes two liquid crystal cell arrays and - drives the liquid crystal display panel to drive the surface. Techniques for liquid helium display panels include: - color filter, light substrate, and a thin film transistor base: bonded to each other and with liquid crystal in between. The color filter and the light substrate include a black matrix, a color viewing film, and a pole connection on the upper glass substrate. /, the electric thin film transistor substrate includes: - _ transistor and - on the lower glass substrate = pole. = fork; data line definition * for the individual crystal cells to provide books =! data line data signal to the pixel The electrode is ringing: ^ pole line _ pole signal. A data signal is supplied from the alizarin ethics/special film transistor formed by the turned-on conductive layer to drive the liquid crystal. ', text = film transistor base (four) money Xu from the use of single-half-tone mask to form the source and _ = = the number of medium-reducing mask process. The process of the +conductor pattern is reduced to 4 201107877. At this time, the 'half-tone mask includes: - the barrier zone of -wt ultraviolet light, the part of the ultraviolet penetrating half-piercing and the light-transmitting area that allows the material line to pass through - half worn The half-piercing of the cover can form a plurality of semi-transparent units with multiple transmittances, and a plurality of semi-transparent materials each having different transmittances such as 'three different transmittances' are used. It is necessary to have a plurality of semi-transparent units having different transmittances from each other. Ο Ο ′ In order to form a cow-shaped hood with more than three or more multi-resolution penetration units, it will be necessary to increase the amount of semi-penetrating material. SUMMARY OF THE INVENTION [In order to avoid the above-mentioned present duck-semi-freshing and by using a single: semi-transparent material to construct a half-tone material having a plurality of semi-transparent units, an embodiment of the present invention Providing a half-tone mask comprising a substrate; a light transmissive region formed on the substrate for transmitting a specific wavelength range of illumination light, and a semi-transmissive region formed on the substrate and having a semi-transmissive material The number of thick laminates is a plurality of half-units having mutually different light transmittances in a specific wavelength range. In some embodiments, the half-tone mask may further comprise a barrier region, the barrier region and a layer formed between at least two of the interfering material. In some embodiments, the semi-tone mask may further include a barrier region, and a barrier layer formed on one of the upper surface or the bottom surface of the at least two semi-permeable materials. 5 201107877 In some embodiments, 'semi-penetrating material may include materials containing chromium tin, zinc, indium, magnesium, donor, sharp, titanium, tantalum, oxidized two early—the main element or a mixture of at least two thieves or more An element, or a material that adds at least two of the CGX, 〇χ, 、, &, & and & to I early-primary reading material or bonding material, wherein the suffix x number defines the individual chemical elements The number of atoms. ~ Naturally penetrating through the car can be wrapped into a semi-transparent unit on the substrate that allows the light to pass through the material, forming a thick semi-penetrating material that allows light to penetrate up to Y%. - The second half penetrates the single _, and is stacked with the two layers of semi-permeable material / 疋 to penetrate the unit.福 福 先 线 穿透 穿透 穿透 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 福 福 福 福 福 福 福 福 福 福 福 福 福 福 福 福 福 福 福 福 福 福 福 福After a light and a developing photoresist are exposed on the substrate of the barrier layer, the light is exposed and exposed, and the photoresist is removed and the exposed barrier is removed. The desired area is exposed; after removing the exposed barrier layer to form a stack--stack: and after the barrier region of the barrier layer between the second semi-penetrating material '-a half-penetration material and photoresist; exposure and development The photoresist is exposed to expose the gamma-assisted __(four) barrier layer on the first-permeation side; and forms a semi-transparent region, including - first half penetration == and semi-through, and second half penetration The unit is on the substrate: a reverse, a, a two-part penetrating material, and a third semi-penetrating unit stacked with the first semi-permeable material 6 201107877 material and the second semi-penetrating material. In some embodiments, the first and second semi-permeable materials are formed from the same semi-permeable material, and the first and second semi-permeable materials are individually of different thicknesses. In some embodiments, the 'semi-penetrating material is a material of fine chrome n-group, group or inscription as its single-main element, or a combination of at least two T or more elements, or added to the material. At least one of Cgx, 0x, Nx t to a single main element material or a bonding material. ◎ * The advantage of this gamma is that 'according to this (four) half-tone mask adopts - single-half the second material ^ has more than two mutual (four) through the county's winged semi-transparent unit __ "zone, and at least two Forming a region with a barrier layer between (4), therefore, a single-semi-penetrating material having more than three different penetration units that are different from each other to eliminate - having multiple transmittances In order to increase the number of semi-penetrating materials, it is necessary to increase the number of semi-penetrating materials.

On, S2. For a detailed description of embodiments of the present invention, please refer to FIGS. 1 is a cross-sectional view of a halftone reticle in accordance with an embodiment of the present invention. The multi-view mask half-modular reticle 100 includes a barrier region S1 on the substrate 1 〇 2 having a plurality of semi-transparent units of semi-transparent cells U a heart buds (an S3, S4, S5 and a light transmissive region)

The second substrate can be a transparent substrate, for example, quartz, which can completely transmit the illuminating green AK in the wavelength range of the 疋. 7 201107877 The semi-transmissive regions S3, S4, S5 may include a plurality of semi-transmissive portions that transmit light to the substrate at mutually different transmittances in a specific wavelength range. After partial development of the ultraviolet light transmission process in the exposure process of the photoresist process, the semi-transmissive regions S3, HI, and % can be formed by individual photoresist patterns of different thicknesses. More specifically, the semi-transmissive regions S3, S4, S5 may include a plurality of semi-transmissive portions by using at least three or more semi-penetrating materials having different light transmittances. That is, the semi-transparent regions S3, S4, S5 may include a first semi-transparent unit S3 formed on the substrate formed by letting the filaments penetrate up to X% of the first-semi-penetrating material 112, The second half penetrating unit S2 formed by the light penetrating up to γ% of the second half penetrating material ιΐ4, and a second semi-transparent unit S4 allowing the light to penetrate up to z% The second semi-penetrating material 112, 114 is stacked. At this time, the first- and second-half penetrations 112 and 114 are formed by using the same semi-penetrating material, and the thickness of the first-penetrating material 112 formed on the first-half penetrating unit S3 is greater than The two-half penetrating unit S2 has a thicker thickness of the (four) two-half penetrating material 114, wherein the individual Na, grab and now are defined as the light transmittance that can be transmitted by the irradiated light in the range of 1 〇 to ^. As described, the half-tone mask can form a plurality of semi-transparent single-systems having three or more mutually different transmittances depending on the thickness of the semi-transparent material or the number of stacked layers using a single-half penetration material. At this time, the first and second semi-penetrating materials 112, 114 may be a material mainly composed of chromium, shi, hopper, or 1 11 纟 或 or mixed with at least two compounds of more than $ or Use at least Cqx, qx, and others - the compound added to the main reading material 'shooting is - from the silk, the element changes. 8 201107877 The composition of the first and second semi-transmissive materials n2, 114 can be arbitrarily changed as long as a portion of the illumination light at a particular wavelength range can be transmitted. In the present invention, the composition of the first spear-through material 112, 114, for example, the stacked semi-transparent materials U2, 114 may be from a group of CrxOy, CrxCOy, Crx〇yNz, Six〇y, Six〇yNz > SixCOy, SixCOyNz > MoxSiy > MoxOy > Mox〇yNz ^ MoxCOy ^

MoxOyNz^ MoxSiy〇z, MoxSiyOzN ' MoxSiyC02N ^ MoxSiyCOz > Tax〇y > Tax〇yNz, TaxCOy , Tax〇yNz , ΑΙχ〇γ , AlxC〇y ^ ^ 〇AlxCGyNz, Tix〇y, Tix〇yNz, Hole Call Any one or a combination thereof. As shown in FIG. 1, the semi-transmissive region may include first, second, and third semi-transparent units having different transmittances, and the first to n-th trans-penetrating units may use a single Half penetrates the material to form. "After the display, the filament of the first-barrier region S1 is left in the exposure process by the barrier 1 outer line. For the purpose of turning over the barrier region Si, the first-penetrating material m, the barrier layer, and the The two semi-permeable materials are stacked on the substrate 102 to block ultraviolet rays. That is, the barrier layer 110 of the barrier region S1 is formed between the first and second semi-transmissive materials. _ 'One half-tone light is formed The military's process includes the light-transmissive zone S5, and the current barrier zone S1 and the semi-penetration zone S2H will be referred to as the 'static blue ginseng 2' first-half penetrating material m, and the barrier layer (10) and the photoresist are Scales, chemical vapor deposition and the like are sequentially stacked on the substrate 1 〇 2. More 敝, the first, the permeable material 112 is preferably a machine, a button, a material of a main element or a mixture of at least two One or more of the 9 201107877 compounds 'or add at least one of c〇x, 〇x, Nx to the chemistry of the main element material' where the sub-tail X is a natural number, depending on the primary The composition of the first half of the penetrating material 112 can be arbitrarily changed as long as it is in a specific wavelength range The sub-illuminated light can be transmitted. In the present invention, the composition of the first semi-transparent material 112 can be from - (7) ^,

SixOyNz, SixCOy, SixCQyNz, MoxSiy, MoxQy, Μ()ΑΝζ, M〇xC〇y, 〇 MoxQyNz, MoxSiyQz, MoxSiy〇zN, MoxSiyCQzN, MoxSiyCOz, Tax〇y,

TaxOyNz ^ TaxCOy ^ Tax〇yNz ^ Alx〇y. AlxOyNz > AlxCOyNz ^ TixOy, Tix〇yNz, TixCOy^ or a combination thereof, where the suffixes x, y and z are natural numbers and derogate each element The number of atoms. Therefore, the barrier layer 110 can be formed using a material capable of preventing the wire, and for example, the barrier layer can be formed using a film formed of chromium and %〇7. Referring now to FIG. 3, the photoresist 12G formed on the barrier layer 11G is irradiated and drawn by a laser beam, and the photoresist is patterned to make the exposed barrier layer no. A position where the region S5 and the second half penetrating unit S2 should be formed. Referring to Figure 4, in May, the photoresist 120 left on the barrier layer 110 is used as a mask, and the exposed barrier layer 11 () is removed by a side process to expose the first semi-permeable material (1). Referring to Figure 5, the exposed first-half penetrating material 112 is removed via a ruin process by using the photoresist 120 remaining on the barrier layer 110 as a reticle. Next, the photoresist 12 留 remaining in the barrier layer 11 is removed by a stripping (deblocking) process. Therefore, the position where the barrier zone 201107877 si and the first and third half penetrating units S3, S4 should be formed is formed by stacking with the: semi-piercing j material 112 and the barrier layer 11Q, and the light transmitting region s5 and the second One position where the semi-transparent unit S2 should be formed is where the substrate 1〇2 is exposed. Referring to Fig. 6, the formed photoresist 120 is stacked on the substrate 1 2 with the first semi-transmissive material ι 2 and the barrier layer H0, and the laser beam is irradiated on the photoresist (10) and drawn (Drawn). Thereafter, the edge photoresist 12 is developed so that the barrier layer is exposed to a position where the second half penetrating unit S4 should be formed. 〇 Please refer to _7' to form the photoresist 12G on the substrate (10) on the shape-penetrating material 112 and the barrier layer 110 as a mask, and remove the exposed barrier layer H0 by a process. Next, the photoresist 12 留 remaining on the substrate 102 is removed by the photoresist process. Please refer to Figure 8. The Ding Tao il4 and the photoresist 120 are successively deposited by upsetting chemical vapor deposition and the like. On the substrate 102. At this time, the second semi-penetrating material 114 is formed to be sighed using the same material as the first penetrating material, but the thick H is half-transparent to make the material so that the other first and second semi-permeable materials may have Different light transmittance. More specifically, the second semi-penetrating material 114 is preferably made of a material mainly composed of chromium, stellite, turn, bismuth, titanium, red or a compound having at least two or Use at least CQX, 0x, Nx - the compound added to the material 'where the suffix X is - natural: number, depending on the primary (four) being combined. The second material m can be arbitrarily changed as long as a part of the illuminating light in a range of a specific wavelength 11 201107877 can be transmitted. In the present invention, the composition of the first semi-penetrating material ι ΐ 4 can be obtained from a group _ CrA, CrxC〇y, CrANz, si are,

SixOyNz ^ SixCOy ^ SixCOyNz > MoxSiy > MoxOy ^ MoxOyNz > MoxCOy >

MoxOyNz, MoxSiyOz, MoxSiy〇zN MDxSiyCOzN, MoxSiyCOz, TaxOy,

TaxOyNz, Taxroy, TaxQyNz, AlxQy, AlxCQy, AlxQyNz, AlxC〇yNz,

Any one or combination of TixOy, TixOyNz, TixCOy, where the suffixes x, y, and z are natural numbers and define the atomic number of each element.参阅 参阅 参阅 目 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Ο More specifically, 'formed in the light-transmissive area S5 and the first-half-penetrating unit, the formation of the photoresist 12 is the laser beam riding and tearing, and the photosensitive resist area is developed and moved. except. Therefore, the photoresist (10) is left at the position where the second semi-transparent material 114' is formed in the barrier region S1, the second semi-transparent unit S2 and the third semi-transparent unit S4 should be formed, and the second photoresist (10) The position where the light transmission area % and the first semi-transmissive S domain S3 should be formed is exposed. Referring to FIG. 10, the second semi-transparent material 114, which is left as a photoresist of the photomask, is removed from the second semi-transmissive material 114, so that the light-transmissive region is called skin to expose the substrate. 2, and the barrier layer 11 is exposed at a position where the first-half penetrating unit S3 should be formed. Referring to FIG. 11, the barrier layer 110 exposed on the substrate (10) is removed to form a first semi-transmissive material. The first half of the 112 penetrates the unit S3. 12 201107877 Referring to FIG. 12, the photoresist 12 left on the substrate 102 is removed by the photoresist removal process, thus interacting with the barrier layer 110 and the first semi-transmissive material. The blocking region si of the 112 and the second semi-transmissive material 114 is formed on the substrate 1〇2, and the first semi-transparent unit S3 formed by the first semi-transmissive material 112 is formed on the substrate 1〇2, and The first semi-transparent unit S4 formed by the two-pass material 114 is formed on the substrate 丨〇2, and the third semi-transparent unit stacked with the first semi-transmissive material 112 and the second semi-transmissive material 114 is formed. On the substrate 102, and forming a light transmissive area % of the exposed substrate.

Although the invention has been disclosed for its purposes, the general inventive concept is not intended to limit the above. It will be apparent to those skilled in the art that various modifications and changes in the form and the details thereof are possible, and the scope and spirit of the invention disclosed in the scope of the application of the patent application. Section (4) is used in the industry, according to the present invention, the semi-foaming cover is constructed by using a single-half penetrating material - having more than three mutually different light transmittances and having a plurality of semi-f translucent single-transmission semi-transparent zones, and a barrier region formed by a barrier layer between at least two semi-penetrating materials, by using a plurality of semi-transparent portions to identify a single-sheet, such as eliminating the need for multiple covers without increasing the semi-penetrating material Quantity. Dry light 13 201107877 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a half-tone mask according to an embodiment of the invention. 2 through 12 are cross-sectional views showing a method of fabricating a halftone mask in accordance with the embodiment of Fig. 1. [Main component symbol description]

100 : Halftone mask 102 : Substrate 110 : Barrier layer 112 : First half penetrating material 114 : Second semi penetrating material 120 : Photoresist S1 : Barrier zone S2 : Semi-transparent unit S3 : Semi-transparent unit S4 : Semi-transparent unit S5 : Transmissive area 14

Claims (1)

201107877 VII. Patent application scope: 1. A half-tone mask comprising: a substrate; - a light-transmissive region formed on the substrate for transmitting light in the wavelength range of the mosquito; and a semi-transparent region according to the half-through The thickness of the material and the number of layers are formed on a plurality of substrates having a plurality of mutually different light transmittances. ^ 2. The semi-tone group of claim 1, wherein the step comprises a barrier zone having a barrier layer formed between at least the semi-permeable material. 3. If you apply for a semi-tone county as described in the application of the Philippine 丨 , , 进 进 进 = = = = = = = = forming (4) _ 敝 敝 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖Chromium, Shixi, 钿, 趣, 鈇, 绍, ^ 斜 oblique through the material 鈒, 鈥, wrong, oxidized town - oxidation or nitriding secret, mixing at least 峨 like axis, lose mr: or Nx, Cx, At least one of Fx and Bx to the material of the single primary material, wherein the suffix is 5 the number of atoms of the junction element. Coincidence from ...,, and several sub-defects of individual chemistry 5. As claimed in the patent scope, the beta-thousand-thousand-first hood 'where' the semi-transparent zone 201107877 includes a first formed on the plate that allows light to penetrate as much as χ material Car empty poems & 涿 + penetration through as much as γ% - the second two thick semi-penetration _ let the light pile up and let the light penetrate as much as possible 'and penetrate the material with the two halves Up to z% - the third half of the penetrating unit. 6. A method for manufacturing a half-tone mask, comprising: · Ο Ο - base, upper pile #有—第半半娜, -嶋 and - photoresist port, 4 shadows of the photoresist to expose the barrier layer a desired area, a continuous barrier layer and the first-semi-penetrating material; after the photoresist is stacked on the substrate having the first-out-pass and the barrier layer, the photoresist is exposed and developed and moved Deleting the barrier layer to expose the desired region of the barrier layer to remove the exposed barrier layer to form a barrier layer between the first semi-through material and the second semi-permeable material After a barrier region, a second semi-transmissive material and a photoresist are successively stacked; the photoresist is exposed and developed to expose a desired area of the second semi-perforated secret and the exposed second half is successively removed. a transmissive material and the barrier layer; and a semi-transmissive region, wherein the semi-transmissive region includes a first-peri-permeation unit formed on the substrate and having the first semi-penetrating material, formed on the substrate a second semi-transparent unit having the second semi-permeable material, and the first penetrating material and the first Transflective Transflective a third cell material are stacked. The method of manufacturing a paste mask of the sixth aspect of the invention, wherein the first semi-transparent material and the second semi-penetrating material are formed using the same semi-penetrating material 'and the first-half penetrating The material and the second semi-permeable material have different thicknesses on the side. 16 201107877 Where to read the semi-zinc, fine, and for the lift - 8. The method for manufacturing the half-tone mask according to item 6 of the patent scope is chrome, tantalum, molybdenum, button, titanium, aluminum, , , , , , , , , , , , , , , , , , , , , , , , , At least one of 〇χ, Νχ, cx, fx, and Βχ to the single host halogen material or one of the bonding materials. 17