WO2010137856A2 - Half tone mask and manufacturing method of the same - Google Patents
Half tone mask and manufacturing method of the same Download PDFInfo
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- WO2010137856A2 WO2010137856A2 PCT/KR2010/003306 KR2010003306W WO2010137856A2 WO 2010137856 A2 WO2010137856 A2 WO 2010137856A2 KR 2010003306 W KR2010003306 W KR 2010003306W WO 2010137856 A2 WO2010137856 A2 WO 2010137856A2
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- Prior art keywords
- half permeation
- permeation
- materials
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- tone mask
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 162
- 230000000903 blocking effect Effects 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000002834 transmittance Methods 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims description 24
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052729 chemical element Inorganic materials 0.000 claims description 3
- 229910003112 MgO-Al2O3 Inorganic materials 0.000 claims 2
- 229910052779 Neodymium Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910016909 AlxOy Inorganic materials 0.000 description 4
- 229910020781 SixOy Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- -1 AlxCOy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Abstract
The present invention relates to a half tone mask and a manufacturing method of the same configured to reduce the number of half permeation materials having a multi half permeation part and the number of processes, thereby reducing the manufacturing cost, wherein the half tone mask comprises: a substrate; a transmissive area formed on the substrate for transmitting irradiated light of a predetermined wavelength; a half permeation area formed on the substrate with a plurality of layers alternatively stacked with two or more half permeation materials, and having a half permeation area formed with a multi half permeation part having a different transmittance according to the number of stacked half permeation materials, and a blocking area having a blocking layer formed at on a plurality of half permeation materials that are alternatively stacked.
Description
The present invention relates to a half tone mask and a manufacturing method of the same configured to reduce the number of half permeation materials having a multi half permeation part and the number of processes, thereby reducing the manufacturing cost.
Generally, a liquid crystal display (LCD) controls the light transmittance of a liquid crystal having a dielectric anisotropy using an electric field to thereby display a picture. To this end, the LCD includes a liquid crystal display panel for displaying a picture using a liquid crystal cell matrix and a driving circuit to drive the liquid crystal display panel. A related art liquid crystal display panel includes a color filter substrate and a thin film transistor substrate that are joined to each other having a liquid crystal therebetween.
The color filter substrate includes a black matrix, a color filter and a common electrode that are sequentially provided on an upper glass substrate.
The thin film transistor substrate includes a thin film transistor and a pixel electrode provided for each cell defined by a gate line crossing a data line on a lower glass substrate. The thin film transistor applies a data signal from the data line to the pixel electrode in response to a gate signal from the gate line. The pixel electrode formed from a transparent conductive layer supplies a data signal from the thin film transistor to drive the liquid crystal.
The thin film transistor substrate is formed through many mask processes, where, processes of forming a source and a drain electrode and a semiconductor pattern are employed by a single half tone mask to reduce the number of mask processes.
At this time, the half tone mask includes a blocking area for blocking ultraviolet, a half permeation area for allowing a partial transmission of the ultraviolet, and a transmission area for allowing the ultraviolet. The half permeation area of the half tone mask may be formed with multiple half permeation parts each having a different transmittance.
Half permeation materials each having a different transmittance are used to form the multiple half permeation parts. That is, three half permeation materials each having different half permeation materials are needed to form a half tone mask having three different transmittances.
A method for forming a half tone mask having three different transmittances may includes stacking a first half permeation material, patterning the first half permeation material by performing photolithograph and etching processes, stacking a second half permeation material thereon, patterning the second half permeation material by performing photolithograph and etch processes, stacking a third half permeation material, and patterning the third half permeation material by performing photolithograph and etch processes.
Thus, the conventional method of forming the half tone mask has disadvantages in that the number of processes, time and manufacturing cost are increased because several photolithography and etching processes must be implemented to form the multiple half permeation parts each having different half permeation materials.
The present invention is disclosed to obviate the above-mentioned disadvantages, and an advantage of the present invention is to provide a half tone mask and a manufacturing method of the same configured to reduce the number of half permeation materials having a multi half permeation part and the number of processes, thereby reducing the manufacturing cost.
In one general aspect of the present invention, there is provided a half tone mask, comprising: a substrate; a substrate; a transmissive area formed on the substrate for transmitting irradiated light of a predetermined waveband; and a half permeation area formed on the substrate with a plurality of layers alternatively stacked with two or more half permeation materials, and having a half permeation area formed with a multi half permeation part having a different transmittance according to the number of stacked half permeation materials.
In some exemplary embodiments, the half tone mask may further include a blocking area having a blocking layer formed at an upper surface or a bottom surface with a plurality of half permeation materials that are alternatively stacked.
In some exemplary embodiments, the multi half permeation part may be so formed as to have a light transmittance difference in the range of 5% ~ 80% according to the stacked number.
In some exemplary embodiments, the half permeation material may include as a main element Cr, Si, Mo, Ta, Ti, and Al, or include a combined material mixed with at least the two or more elements, or may be a material added with at least one of Cox, Ox, Nx to the main element.
In some exemplary embodiments, each of the at least two or more half permeation materials may be formed with a half permeation material having a different etching ratio.
In some exemplary embodiments, the half permeation area may include a first half permeation part alternatively stacked with a first half permeation material and a second half permeation material to allow light to be transmissive as much as X %, in case the half permeation area is alternatively formed with the first half permeation material and the second half permeation material, a second half permeation part alternatively stacked with the first half permeation material and the second half permeation material to allow light to be transmissive as much as Y %, in case the second half permeation part has a fewer number of half permeation materials than that of the first half permeation part, and a third half permeation part alternatively stacked with the first half permeation material and the second half permeation material to allow light to be transmissive as much as Z %, in a case the third half permeation part has a fewer number of half permeation materials than that of the second half permeation part.
In another general aspect of the present invention, a manufacturing method of a half tone mask, comprising: alternatively stacking on a substrate at least two or more half permeation materials in a multiple layer; stacking a blocking layer on the alternatively stacked at least two or more half permeation materials; and etching step by step the number of alternatively stacked two or more half permeation materials to form multiple half permeation parts each having a different height.
In some exemplary embodiments, the multiple half permeation part is so formed as to have a light transmittance in the range of 5% ~80% according to the number of stacked half permeation materials.
In some exemplary embodiments, the step of etching step by step the number of alternatively stacked two or more half permeation materials to form multiple half permeation units each having a different height comprises: stacking photo-resists on the blocking layer alternatively stacked at least with the two or more half permeation materials to allow each of the photo-resists to have a sill; and using the sill-formed photo-resist as a mask to sequentially etch the exposed blocking layer and the alternatively stacked two or more translucent materials to allow the blocking layer and the half permeation materials to have a mutually different height.
In some exemplary embodiments, each of the at least two or more half permeation materials has a different etching ratio.
In some exemplary embodiments, the half permeation material is a material having as a main element one of Cr, Si, Mo, Ta, or Al, or is a combined material mixed with at least the two or more elements, or is a material added with at least one of Cox, Ox, Nx to the main element.
The present invention is advantageous in that a half permeation mask includes multiple half permeation part alternatively stacking two half permeation materials and differentiating a light transmittance according to stacked heights of the two half permeation materials, such that alternatively stacked two half permeation materials are etched step by step to form a different stacked height and to form multiple half permeation parts each having a different transmittance, whereby multiple half permeation parts having respectively different transmittances by using at least two or more half permeation materials and by etching step by step, thereby reducing the number of half permeation materials and manufacturing processes , and enhancing the productivity as a result of reduced time and cost.
FIG. 1 is a cross-sectional view illustrating a half tone mask according to an exemplary embodiment of the present invention.
FIGS. 2 to 12 are cross-sectional views illustrating a manufacturing process of a half tone mask according to the exemplary embodiment of FIG.1.
FIG. 13 is a cross-sectional view illustrating a half tone mask according to another exemplary embodiment of the present invention.
Configuration and operation of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view illustrating a half tone mask according to an exemplary embodiment of the present invention.
Referring to FIG.1, a half tone mask (100) includes a blocking area (S1) on a substrate (102), half permeation area (S3, S4, S5) having multiple half permeation parts and a transmissive area (S2).
The substrate (102) may be a transparent substrate, for example, a quartz, that is capable of completely transmitting irradiated light of a predetermined waveband. However, the substrate is not limited to the quartz but may be any material that can transmit light.
The half permeation areas (S3, S4, S5) may include multiple half permeation parts to transmit light irradiated to the substrate in a predetermined waveband in mutually different transmittances. The half permeation areas (S3, S4, S5) may be formed by photo-resist patterns each having a different thickness after a development process by partially transmitting the ultraviolet in the exposing process of the photo-resist process.
To be more specific, the half permeation areas (S3, S4, S5) may include multiple half permeation parts each having a different transmittance by using at least two or more half permeation materials (112, 114). That is, the half permeation areas (S3, S4, S5) are alternatively stacked with the at least two or more half permeation materials (112, 114), and the multiple half permeation parts each having a different transmittance may be formed according to the number of the at least two or more half permeation materials (112, 114) that are alternatively formed.
Now, the half permeation areas (S3, S4, S5) are exemplified by a case where the first and second half permeation materials (112, 114) are alternatively stacked in 4 layers.
That is, the half permeation areas (S3, S4, S5) includes a first half permeation part (S3) alternatively stacked on a substrate (102) with a first half permeation material (114) to allow light to be transmissive as much as X %, a second half permeation part (S4) alternatively stacked on the first half permeation part (114) to allow light to be transmissive as much as Y %, and a third half permeation part (S5) alternatively stacked in 3 layers with the first half permeation material (114) and the second half permeation material (112) to allow light to be transmissive as much as Z %, where each of X %, Y % and Z % respectively defines a transmittance that the irradiated light is transmissive in the range of 5% ~ 80% . That is, the multiple half permeation part may be formed to have a difference of light transmittance in the range of 5% ~ 80% according to the number of stacked layers.
At this time, the first and second half permeation materials (112, 114) may be a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a combined material mixed with at least the two or more elements, or a material added with at least one of Cox, Ox, Nx to the main element material or the combined material, where x is a natural number that changes according to combination of elements.
A composition of the first and second half permeation materials (112, 114) may be variably formed as long as part of the irradiated light of a predetermined wavelength is transmissive. In the present invention, the composition of the first and second half permeation materials (112, 114), for example, the stacked half permeation materials (112, 114) may be a composition of any one from a group of CrxOy, CrxCOy, CrxOyNz, SixOy, SixOyNz, SixCOy, SixCOyNz, MoxSiy, MoxOy, MoxOyNz, MoxCOy, MoxOyNz, MoxSiyOz, MoxSiyOzN MoxSiyCOzN, MoxSiyCOz, TaxOy, TaxOyNz, TaxCOy, TaxOyNz, AlxOy, AlxCOy, AlxOyNz, AlxCOyNz, TixOy, TixOyNz, TixCOy, or a combination thereof, where the suffix x, y and z is a natural number and defines the number of each chemical element.
Preferably, in a case the first and second half permeation materials (112, 114) are formed by CrxOy, CrxCOy and CrxOyNz , the second half permeation material (114) selectively etchable with Cr among the listed half permeation materials may be used. That is, each of the first and second half permeation materials (112, 114) must be formed with half permeation materials each having a different etching ratio out of the listed half permeation materials.
As noted above, a first to m th half permeation parts may be formed each having a different transmittance according to the number of stacked layers by alternatively forming a plurality of first and second half permeation materials (112, 114), where m is a natural number larger than 1, which will be explained with reference to FIG. 13.
Referring to FIG. 13, the half permeation areas (S3, S4, S5) may include a first half permeation part (S1) alternatively stacked with a plurality of first half permeation materials (112) and a plurality of second half permeation materials (114) to allow light to be transmissive as much as X %, in case the half permeation area is alternatively formed with the first half permeation materials and the second half permeation materials, a second half permeation area (S4) alternatively stacked with the first half permeation materials and the second half permeation materials to allow light to be transmissive as much as Y %, in case the second half permeation area has a fewer number of half permeation materials than that of the first half permeation area, and a third half permeation area (S5) alternatively stacked with the first half permeation materials and the second half permeation materials to allow light to be transmissive as much as Z %, in a case the third half permeation area has a fewer number of half permeation materials than that of the second half permeation area.
That is, a half tone mask may be formed having multiple half permeation parts each having a different transmittance according to the number of stacked layers by alternatively stacking at least two or more half permeation materials.
The blocking area (S1) is left with a photo-resist pattern after development process by blocking the ultraviolet during exposing process. To this end, the blocking area (S1) blocks the ultraviolet by allowing blocking layers to be stacked on the plurality of first half permeation materials (114) and the plurality of second half permeation materials (112).
Now, a process of forming a half tone mask including the transmissive area (S2), the blocking area (S1) and the half permeation areas (S3, S4, S5) will be described with reference to FIGS. 2 to 12.
FIGS. 2 to 12 are cross-sectional views illustrating a manufacturing process of a half tone mask according to the exemplary embodiment of FIG.1.
Although the plurality of layers may be formed by alternatively stacking the first and second half permeation materials, but in the present exemplary embodiment, description will be given on a case where the first and second half permeation materials are alternatively stacked to form four layers.
Referring to FIG. 2, the first and second half permeation materials (114, 112) are alternatively stacked on the substrate (102) to form four layers by sputtering, chemical vapor deposition and the like, and a blocking layer (110) and a photo-resist (120) are sequentially stacked thereon.
To be more specific, the first and second half permeation materials (112, 114) may be a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a combined material mixed with at least the two or more elements, or a material added with at least one of Cox, Ox, Nx to the main element material or the combined material, where x is a natural number that changes according to combination of elements.
A composition of the first and second half permeation materials (112, 114) may be variably formed as long as part of the irradiated light of a predetermined wavelength is transmissive. In the present invention, the composition of the first and second half permeation materials (112, 114) may be a composition of any one from a group of CrxOy, CrxCOy, CrxOyNz, SixOy, SixOyNz, SixCOy, SixCOyNz, MoxSiy, MoxOy, MoxOyNz, MoxCOy, MoxOyNz, MoxSiyOz, MoxSiyOzN MoxSiyCOzN, MoxSiyCOz, TaxOy, TaxOyNz, TaxCOy, TaxOyNz, AlxOy, AlxCOy, AlxOyNz, AlxCOyNz, TixOy, TixOyNz, TixCOy, or a combination thereof.
Preferably, in a case the first and second half permeation materials (112, 114) are formed by CrxOy, CrxCOy and CrxOyNz , the second half permeation material (114) selectively etchable with Cr among the listed half permeation materials may be used. That is, each of the first and second half permeation materials (112, 114) must be formed with half permeation materials each having a different etching ratio out of the listed half permeation materials.
Furthermore, the blocking layer (110) may be formed with a material capable of blocking the ultraviolet, and for example, the blocking layer may be formed by a film formed with Cr and CrxOy .
Referring to FIG.3, first and second photo-resist patterns (120a, 120b) each having a sill may be formed after the photo-resist (120) formed on the blocking layer (110) is drawn and developed, and the blocking layer is exposed at a position where the transmissvie area (S2) is formed.
To be more specific, the first and second photo-resist patterns (120a, 120b) each having a different thickness are formed by irradiating the laser beam to the photo-resist (120) by adjusting the intensity of the laser beam. The first photo-resist pattern (120a) is positioned at where the blocking area (S1), the first half permeation part (S3) and the third half permeation part (S5) are supposed to be formed, and the second photo-resist pattern (120b) is positioned at where the second half permeation part (S4) is supposed to be formed. The blocking layer (110) is exposed at a position where the transmissvie area (S2) is supposed to be formed.
Referring to FIG.4, the blocking layer (110) and the first and second half permeation materials (112, 114) exposed by using the first and second photo-resist patterns (120a, 120b) remaining on the blocking layer (110) as masks are removed by etching process.
To be more specific, the transmissive area (S2) is formed by exposing the substrate (120) through an etching process using the blocking layer (110) and the first and second photo-resist patterns of the first and second half permeation materials (120a, 120b) as masks.
Referring to FIG.5, the first photo-resist pattern (120a) is thinned by an etching process using oxygen (O2) plasma, and the second photo-resist pattern (120b) is removed. The blocking layer (120) is exposed at where the second half permeation part (S4) having a Y% transmittance is formed by removing the second photo-resist pattern (120b).
Referring to FIG.6, the blocking layer (110) exposed at where the third half permeation part (S5) is supposed to be formed, the second half permeation material (112) and the first half permeation material (114) are sequentially removed through etching process using the first photo-resist pattern (120a) left on the blocking layer (110) as a mask. As a result, the second half permeation part (S4) is formed on which the first and second half permeation materials (112, 114) are stacked on the substrate (102). Successively, the first photo-resist pattern (120a) remaining on the substrate (102) is removed through a stripping process.
Referring to FIG.7, the photo-resist (120) is formed on the substrate (102) formed with the blocking area (S1), the transmissive area (S2) and the second half permeation part (S4) are formed. The first and second photo-resist patterns (120a, 120b) each having a sill, are formed after the photo-resist (120) is drawn and developed.
To be more specific, the first and second photo-resist patterns (120a, 120b) each having a different thickness are formed by irradiating the laser beam to the photo-resist (120) by adjusting the intensity of the laser beam. The first photo-resist pattern (120a) is positioned at where the blocking area (S1), the transmissive area (S2) and the second half permeation part (S4) are supposed to be formed, and the second photo-resist pattern (120b) is positioned at where the third half permeation part (S5) is supposed to be formed. The blocking layer (110) is exposed at a position where the first half permeation part (S3) is supposed to be formed.
Referring to FIG.8, the blocking layer (110) exposed using the first and second photo-resist patterns (120a, 120b) as a mask on the substrate (102), the second half permeation material (112) and the first half permeation material (114) are sequentially removed through etching process. As a result, the first and second half permeation materials (112, 114) are left on where the first half permeation part (S3) is supposed to be formed.
Referring to FIG.9, the first photo-resist pattern (120a) is thinned by an etching process using oxygen (O2) plasma, and the second photo-resist pattern (120b) is removed. The blocking layer (120) is exposed at where the third half permeation part (S5) having a Z% light transmittance is formed by removing the second photo-resist pattern (120b).
Referring to FIG.10, the blocking layer (110) exposed by using the first photo-resist pattern (120a) as a mask on the substrate (102) is removed by the etching process and the second half permeation material (112) is then removed as shown in FIG.11.
Successively referring to FIG. 12, the first photo-resist (120a) remaining on the substrate (102) is removed by a stripping process to form a half tone mask having multiple half permeation parts each having a different transmittance. As a result, a transmissive area (S2) exposing the substrate (102) for the light irradiated to the substrate (102) to be transmissive, and first and second half permeation materials (112, 114) on the substrate (102) are alternatively stacked in 4 layers, and the blocking area (S1) formed with the blocking layer (120) is formed thereon.
Furthermore, a half permeation areas having multiple half permeation parts each having a different transmittance are formed with a first half permeation part (S3) having an X% transmittance by stacking first half permeation material on the substrate, a second half permeation part (S4) having a Y% transmittance by stacking first and second half permeation materials (112, 114) on the substrate, and a third half permeation part (S5) having a Z% transmittance by alternatively stacking first and second half permeation materials (112, 114) in 3 layers on the substrate.
As noted above, the first and second half permeation materials (112, 114) may form multiple half permeation parts each having a different transmittance through gradual step-by-step etching process after forming the half permeation materials each having a different etching ratio in a plurality of layers.
That is, the half tone mask having multiple half permeation parts each having a different transmittance may be provided by using only the first and second half permeation materials.
Meanwhile, although the present exemplary embodiments has described a method forming only the first, second and third half permeation parts using the first and second half permeation materials, multiple half permeation parts each having a different transmittance may be formed according to the number of stacked layers of first and second half permeation materials.
Furthermore, multiple half permeation parts having first to m th half permeation part may be formed by stacking and step-by-step etching first to n th half permeation materials in addition to the first and second half permeation materials, where n and m are natural number larger than 1.
The present invention is industrially applicable in that a half permeation mask includes multiple half permeation parts alternatively stacking two half permeation materials and differentiating a light transmittance according to stacked heights of the two half permeation materials, such that alternatively stacked two half permeation materials are etched step by step to form a different stacked height and to form multiple half permeation parts each having a different transmittance, whereby multiple half permeation parts having respectively different transmittances by using at least two or more half permeation materials and by etching step by step, thereby reducing the number of half permeation materials and manufacturing processes , and enhancing the productivity as a result of reduced time and cost.
Claims (11)
- A half tone mask comprising: a substrate; a transmissive area formed on the substrate for transmitting irradiated light of a predetermined wavelength; and a half permeation area formed on the substrate with a plurality of layers alternatively stacked with two or more half permeation materials, and having a half permeation area formed with a multi half permeation part having a different transmittance according to the number of stacked half permeation materials.
- The half tone mask of claim 1, wherein the half tone mask further includes a blocking area having a blocking layer formed at an upper surface or a bottom surface with a plurality of half permeation materials that are alternatively stacked.
- The half tone mask of claim 1, wherein the multi half permeation part is so formed as to have a light transmittance difference in the range of 5% ~ 80% according to the number of stacking.
- The half tone mask of claim 1, wherein the half permeation material includes as a main element one of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al2O3 or Si3N4, or a combined material mixed with at least the two or more elements, or includes the single main element or the combined material added with at least one of Cox, Ox, Nx, Cx, Fx, and Bx, where suffix x is a natural number and defines the number of each chemical element.
- The half tone mask of claim 1, wherein each of the at least two or more half permeation materials is formed with a half permeation material having a different etching ratio.
- The half tone mask of claim 1, wherein the half permeation area includes a first half permeation part alternatively stacked with a first half permeation material and a second half permeation material to allow light to be transmissive as much as X %, in case the half permeation area is alternatively formed with the first half permeation material and the second half permeation material, a second half permeation part alternatively stacked with the first half permeation material and the second half permeation material to allow light to be transmissive as much as Y %, in case the second half permeation part has a fewer number of half permeation materials than that of the first half permeation part, and a third half permeation part alternatively stacked with the first half permeation material and the second half permeation material to allow light to be transmissive as much as Z %, in a case the third half permeation part has a fewer number of half permeation materials than that of the second half permeation part.
- A manufacturing method of a half tone mask, comprising: alternatively stacking on a substrate at least two or more half permeation materials in a multiple layer; stacking a blocking layer on the alternatively stacked at least two or more half permeation materials; and etching step by step the number of alternatively stacked two or more half permeation materials to form multiple half permeation parts each having a different height.
- The method of claim 7, wherein the multiple half permeation part is so formed as to have a light transmittance in the range of 5% ~80% according to the number of stacked half permeation materials.
- The method of claim 7, wherein the step of etching step by step the number of alternatively stacked two or more half permeation materials to form multiple half permeation units each having a different height comprises: stacking photo-resists on the blocking layer alternatively stacked at least with the two or more half permeation materials to allow each of the photo-resists to have a sill; and using the sill-formed photo-resist as a mask to sequentially etch the exposed blocking layer and the alternatively stacked two or more translucent materials to allow the blocking layer and the half permeation materials to have a mutually different height.
- The method of claim 7, wherein each of the at least two or more half permeation materials has a different etching ratio.
- The method of claim 7, wherein the half permeation material includes as a main element one of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al2O3 or Si3N4, or a combined material mixed with at least the two or more elements, or includes the single main element or the combined material added with at least one of Cox, Ox, Nx, Cx, Fx, and Bx, where suffix x is a natural number and defines the number of each chemical element.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012512962A JP5336655B2 (en) | 2009-05-26 | 2010-05-26 | Halftone mask and manufacturing method thereof |
| CN201080023385.3A CN102449736B (en) | 2009-05-26 | 2010-05-26 | Half-tone mask and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0045848 | 2009-05-26 | ||
| KR1020090045848A KR101168406B1 (en) | 2009-05-26 | 2009-05-26 | Half tone mask and method of manufacturig the same |
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| Publication Number | Publication Date |
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| WO2010137856A2 true WO2010137856A2 (en) | 2010-12-02 |
| WO2010137856A3 WO2010137856A3 (en) | 2011-03-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2010/003306 WO2010137856A2 (en) | 2009-05-26 | 2010-05-26 | Half tone mask and manufacturing method of the same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5336655B2 (en) |
| KR (1) | KR101168406B1 (en) |
| CN (1) | CN102449736B (en) |
| TW (1) | TWI431410B (en) |
| WO (1) | WO2010137856A2 (en) |
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| WO2018056033A1 (en) * | 2016-09-26 | 2018-03-29 | Hoya株式会社 | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| JP6432636B2 (en) * | 2017-04-03 | 2018-12-05 | 凸版印刷株式会社 | Photomask blank, photomask and photomask manufacturing method |
| KR20210016814A (en) * | 2019-08-05 | 2021-02-17 | 주식회사 포트로닉스 천안 | Method for manufacturing mask having three or more tone |
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| JP2004062135A (en) * | 2002-07-30 | 2004-02-26 | Hoya Corp | Method for manufacturing halftone phase shift mask blank, halftone phase shift mask blank and halftone phase shift mask |
| KR20090043893A (en) * | 2007-10-30 | 2009-05-07 | 엘지마이크론 주식회사 | Half tone mask and manufacturing method of the same |
| KR20090050496A (en) * | 2007-11-15 | 2009-05-20 | 주식회사 에스앤에스텍 | Half-tone phase shift blankmask and it's manufacturing method |
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| US5914202A (en) * | 1996-06-10 | 1999-06-22 | Sharp Microeletronics Technology, Inc. | Method for forming a multi-level reticle |
| JP4348534B2 (en) * | 2003-03-31 | 2009-10-21 | 信越化学工業株式会社 | Photomask blank, photomask, and photomask blank manufacturing method |
| JP4525893B2 (en) * | 2003-10-24 | 2010-08-18 | 信越化学工業株式会社 | Phase shift mask blank, phase shift mask and pattern transfer method |
| KR101255616B1 (en) * | 2006-07-28 | 2013-04-16 | 삼성디스플레이 주식회사 | Multi-tone optical mask, method of manufacturing the same and method of manufacturing thin film transistor substrate using the same |
| CN101438386B (en) * | 2007-05-11 | 2012-03-07 | Lg伊诺特有限公司 | Intermediate tone mask with a plurality of semi-permeation parts and method of manufacturing the same |
| JP5239591B2 (en) * | 2007-07-30 | 2013-07-17 | 大日本印刷株式会社 | Gradation mask and manufacturing method thereof |
| JP5151312B2 (en) * | 2007-08-21 | 2013-02-27 | 大日本印刷株式会社 | Manufacturing method of color filter |
| JP4934237B2 (en) * | 2007-09-29 | 2012-05-16 | Ｈｏｙａ株式会社 | Gray-tone mask manufacturing method, gray-tone mask, and pattern transfer method |
| US8216745B2 (en) | 2007-11-01 | 2012-07-10 | Ulvac Coating Corporation | Half-tone mask, half-tone mask blank and method for manufacturing half-tone mask |
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2009
- 2009-05-26 KR KR1020090045848A patent/KR101168406B1/en active IP Right Grant
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2010
- 2010-05-26 WO PCT/KR2010/003306 patent/WO2010137856A2/en active Application Filing
- 2010-05-26 CN CN201080023385.3A patent/CN102449736B/en active Active
- 2010-05-26 JP JP2012512962A patent/JP5336655B2/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004062135A (en) * | 2002-07-30 | 2004-02-26 | Hoya Corp | Method for manufacturing halftone phase shift mask blank, halftone phase shift mask blank and halftone phase shift mask |
| KR20090043893A (en) * | 2007-10-30 | 2009-05-07 | 엘지마이크론 주식회사 | Half tone mask and manufacturing method of the same |
| KR20090050496A (en) * | 2007-11-15 | 2009-05-20 | 주식회사 에스앤에스텍 | Half-tone phase shift blankmask and it's manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201107878A (en) | 2011-03-01 |
| KR20100127413A (en) | 2010-12-06 |
| CN102449736A (en) | 2012-05-09 |
| CN102449736B (en) | 2016-09-07 |
| TWI431410B (en) | 2014-03-21 |
| WO2010137856A3 (en) | 2011-03-03 |
| KR101168406B1 (en) | 2012-07-25 |
| JP2012528353A (en) | 2012-11-12 |
| JP5336655B2 (en) | 2013-11-06 |
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