WO2010134774A2 - Half tone mask and manufacturing method of the same - Google Patents

Half tone mask and manufacturing method of the same Download PDF

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Publication number
WO2010134774A2
WO2010134774A2 PCT/KR2010/003205 KR2010003205W WO2010134774A2 WO 2010134774 A2 WO2010134774 A2 WO 2010134774A2 KR 2010003205 W KR2010003205 W KR 2010003205W WO 2010134774 A2 WO2010134774 A2 WO 2010134774A2
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WO
WIPO (PCT)
Prior art keywords
half permeation
permeation
area
substrate
materials
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PCT/KR2010/003205
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French (fr)
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WO2010134774A3 (en
Inventor
Moosung Kim
Original Assignee
Lg Innotek Co., Ltd.
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Publication date
Application filed by Lg Innotek Co., Ltd. filed Critical Lg Innotek Co., Ltd.
Priority to CN201080032763.4A priority Critical patent/CN102460645B/en
Priority to JP2012511763A priority patent/JP5432369B2/en
Publication of WO2010134774A2 publication Critical patent/WO2010134774A2/en
Publication of WO2010134774A3 publication Critical patent/WO2010134774A3/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Definitions

  • the present invention relates to a half tone mask and a manufacturing method of the same configured to reduce the number of processes of manufacturing the half tone mask having multiple half permeation units, thereby reducing the time and manufacturing costs.
  • a liquid crystal display controls the light transmittance of a liquid crystal having a dielectric anisotropy using an electric field to thereby display a picture.
  • the LCD includes a liquid crystal display panel for displaying a picture using a liquid crystal cell matrix and a driving circuit to drive the liquid crystal display panel.
  • a related art liquid crystal display panel includes a color filter substrate and a thin film transistor substrate that are joined to each other having a liquid crystal therebetween.
  • the color filter substrate includes a black matrix, a color filter and a common electrode that are sequentially provided on an upper glass substrate.
  • the thin film transistor substrate includes a thin film transistor and a pixel electrode provided for each cell defined by a gate line crossing a data line on a lower glass substrate.
  • the thin film transistor applies a data signal from the data line to the pixel electrode in response to a gate signal from the gate line.
  • the pixel electrode formed from a transparent conductive layer supplies a data signal from the thin film transistor to drive the liquid crystal.
  • the thin film transistor substrate is formed through many mask processes, where, processes of forming a source electrode and a drain electrode and a semiconductor pattern are employed by a single half tone mask to reduce the number of mask processes.
  • the half tone mask includes a blocking area blocking ultraviolet, a half permeation area partially transmitting the ultraviolet, and a transmissive area transmitting the ultraviolet.
  • the half permeation area of the half tone mask may be formed with multiple half permeation parts each having a different light transmittance. At this time, a plurality of half permeation materials each having a different transmittance is employed to form the multiple half permeation area.
  • a plurality of half permeation materials each having a different transmittance is employed for the multiple half permeation area in order to form half permeation parts each having a different transmittance on the half permeation area.
  • a manufacturing method of a half tone mask having 3 or more mutually different half permeation parts may be formed by stacking a first half permeation material which is patterned by photolithography process and etching process, on which a second half permeation material is stacked, the second half permeation material is patterned by photolithography process and etching process, a third half permeation material is stacked thereon, and the third half permeation material is patterned by photolithography process and etching process to form a half permeation area having 3 mutually different transmittances.
  • the conventional manufacturing method suffers from disadvantages in that each of the mutually different half permeation materials is stacked and patterned by the photolithography process and etching process to form the multiple half permeation parts, whereby the number of processes increases to increase the time and costs.
  • the present invention is disclosed to obviate the above-mentioned disadvantages, and an advantage of the present invention is to provide a half tone mask and a manufacturing method of the same configured to reduce the number of processes of manufacturing the half tone mask having multiple half permeation units, thereby reducing the time and manufacturing costs.
  • a half tone mask comprising: a substrate; a transmissive area formed on the substrate for transmitting irradiated light of a predetermined wavelength range; and a half permeation area having multiple half permeation units having 2 or more mutually different transmittances to a predetermined wavelength range of light irradiated on the substrate using 2 or more half permeation materials.
  • the half tone mask may further include a blocking area having a blocking layer formed on an upper surface or a bottom surface of the at least two or more half permeation materials.
  • the half permeation material may include as a main element one of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al 2 O 3 or Si 3 N 4, or a combined material mixed with at least the two or more elements, or includes the single main element or the combined material added with at least one of Cox, Ox, Nx, Cx, Fx, and Bx to the single main element or the combined material, where suffix x is a natural number and defines the number of each chemical element.
  • each of the at least two half permeation materials has a different etching ratio.
  • a manufacturing method of a half tone mask comprising: forming a blocking layer on a substrate on which a blocking area is to be formed; forming a half permeation area on the blocking layer-formed substrate half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials; and forming a blocking area stacked with the blocking layer and at least 2 half permeation materials and a transmissive area on which the substrate is exposed.
  • the step of forming a half permeation area on the blocking layer-formed substrate half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials comprises: sequentially stacking a first permeation material and a photo-resist on the blocking layer and exposing and developing the photo-resist so that a necessary area is exposed in the first half permeation material to remove the exposed first half permeation material; sequentially stacking a second half permeation material and photo-resist on the first half permeation material-formed substrate and exposing and developing the photo-resist so that a necessary area is exposed in the second half permeation material to remove the exposed second half permeation material; and forming a first half permeation part formed with the first half permeation material on the substrate, a second half permeation part formed with the second half permeation material and a third half permeation part stacked with the first and second half permeation materials.
  • each of the at least two half permeation materials has a different etching ratio.
  • the half permeation material is a material having as a main element one of Cr, Si, Mo, Ta, or Al, or is a combined material mixed with at least the two or more elements, or is a material added with at least one of Cox, Ox, Nx to the main element.
  • a manufacturing method of a half tone mask comprising: forming a half permeation area on a substrate a half permeation area having multiple half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials; sequentially stacking a blocking layer and a photo-resist on the multiple half permeation parts and exposing and developing the photo-resist so that a necessary area is exposed in the blocking layer to remove the exposed photo-resist; and forming a blocking area formed with a blocking layer on the at least two half permeation materials and forming a transmissive area on which the substrate is exposed.
  • the step of forming a half permeation area on a substrate a half permeation area having multiple half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials comprises: sequentially stacking a first permeation material and a photo-resist on the substrate and exposing and developing the photo-resist so that a necessary area is exposed in the first half permeation material to remove the exposed first half permeation material; sequentially stacking a second half permeation material and photo-resist on the first half permeation material-formed substrate and exposing and developing the photo-resist so that a necessary area is exposed in the second half permeation material to remove the exposed second half permeation material; and forming a first half permeation part formed with the first half permeation material on the substrate, a second half permeation part formed with the second half permeation material and a third half permeation part stacked with the first and second half permeation materials.
  • each of the at least two half permeation materials has a different etching ratio.
  • the half permeation material is a material having as a main element one of Cr, Si, Mo, Ta, or Al, or is a combined material mixed with at least the two or more elements, or is a material added with at least one of Cox, Ox, Nx to the main element.
  • the present invention is advantageous in that the half tone mask includes a half permeation area having multiple half permeation parts having mutually different transmittances using at least 2 half permeation materials, and a blocking area formed on an upper surface or a bottom surface of at least 2 half permeation materials, and the thus-configured half tone mask can simplify the processes as the number of processes is reduced and as the half permeation materials are selectively etched due to different etching ratios of the at least 2 half permeation materials.
  • FIG. 1 is a cross-sectional view illustrating a half tone mask according to a first exemplary embodiment of the present invention.
  • FIGS. 2 to 10 are cross-sectional views illustrating a manufacturing method of a half tone mask according to the first exemplary embodiment of FIG.1.
  • FIG.11 is a cross-sectional view illustrating a half tone mask according to a second exemplary embodiment of the present invention.
  • FIGS. 12 to 20 are cross-sectional views illustrating a manufacturing method of a half tone mask according to the second exemplary embodiment of FIG.2.
  • FIG. 1 is a cross-sectional view illustrating a half tone mask according to a first exemplary embodiment of the present invention.
  • a half tone mask (100) includes a blocking area (S1) on a substrate (102), half permeation areas (S2, S3, S4) having multiple half permeation parts and a transmissive area (S5).
  • the substrate (102) may be a transparent substrate, for example, a quartz, that is capable of completely transmitting irradiated light of a predetermined wavelength range.
  • the substrate is not limited to the quartz but may be any material that can transmit light.
  • the half permeation areas (S2, S3, S4) may include multiple half permeation parts to transmit light irradiated to the substrate in a predetermined wavelength range in mutually different transmittances.
  • the half permeation areas (S2, S3, S4) may be formed by photo-resist patterns each having a different thickness after a development process by partially transmitting the ultraviolet in the exposing process of the photo-resist process.
  • the half permeation areas (S2, S3, S4) may include multiple half permeation parts having 3 or more mutually different transmittances by using at least two or more half permeation materials. At this time, if the half permeation areas (S2, S3, S4) are formed with half permeation materials, for example, first and second half permeation materials (112, 114), 3 half permeation parts each having a different transmittance may be formed.
  • the half permeation areas (S2, S3, S4) may include a first half permeation part (S3) formed on the substrate with a first half permeation material (112) to allow light to be transmissive as much as X %, a second half permeation part (S4) formed with a second half permeation material (114) to allow light to be transmissive as much as Y %, and a third half permeation part (S2) stacked with first and second half permeation materials (112, 114) to allow light to be transmissive as much as Z %, where each of X%, Y% and Z% defines a light transmittance capable of transmitting the irradiated light as much as 10 ⁇ 90%.
  • the first and second half permeation materials (112, 114) may be a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where x is a natural number that changes according to combination of elements.
  • a composition of the first and second half permeation materials (112, 114) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive.
  • the composition of the first and second half permeation materials (112, 114) may be a composition of any one from a group of Cr x O y , Cr x CO y , Cr x O y N z , Si x O y , Si x O y N z , Si x CO y , Si x CO y N z , Mo x Si y , Mo x O y , Mo x O y N z , Mo x CO y , Mo x O y N z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z N Mo x Si y CO z N,
  • the second half permeation material (114) selectively etchable with Cr out of the listed half permeation materials may be used. That is, the first half permeation material (112) must be formed with half permeation materials each having a different etching ratio among the listed half permeation materials.
  • the half permeation area may include first, second and third half permeation parts each having a different transmittance, and may also include first to nth half permeation parts using multiple half permeation materials.
  • the blocking area (S1) is left with a photo-resist pattern after developing process by blocking the ultraviolet during exposing process. To this end, the blocking area (S1) is sequentially stacked on the substrate (102) with the blocking layer (110), the first half permeation material (112) and the second half permeation material (114) to block the ultraviolet.
  • the blocking area (S1) may be sequentially formed on the substrate (102) with the first half permeation material (112), the second half permeation material (114) and the blocking layer (110). That is to say, the blocking area (S1) may be formed with the blocking layer (110) formed as a bottom structure formed underneath the first and second half permeation materials (112, 114), or may be formed with the blocking layer (110) formed as a top structure formed on the first and second half permeation materials (112, 114).
  • the half tone mask including the transmissive area (S5), the blocking area (S1) and the half permeation materials (112, 114) will be described with reference to FIGS. 2a to 2i.
  • the blocking layer (110) and the photo-resist (120) are sequentially stacked on the substrate (102) by sputtering, chemical vapor deposition and the like.
  • the blocking layer (110) may be formed with a material capable of blocking the ultraviolet, and for example, the blocking layer may be formed by a film formed with Cr and Cr x O y .
  • the photo-resist (120) formed where the transmissive area (S5) and the half permeation materials (112, 114) are supposed to be formed is drawn and developed, whereby the blocking layer (110) is exposed.
  • the photo-resist where the transmissive area (S5) and the half permeation materials (112, 114) are supposed to be formed is irradiated by laser beam, drawn, and the drawn photo-resist area is developed and removed.
  • the photo-resist (120) is left on the blocking layer (110) formed at where the blocking area (S1) is supposed to be formed, and the blocking layer (110) is exposed at where the transmissive area (S5) and the half permeation materials (112, 114) are supposed to be formed.
  • the blocking layer (110) exposed using the photo-resist (120) remaining on the substrate (102) as a mask is removed by etching process.
  • the blocking layer (110) on the substrate (102) is left only at a position where the blocking area (S1) is supposed to be formed, and the substrate (102) is exposed at a position where the transmissive area (S5) and the half permeation areas (S2, S3, S4) are supposed to be formed.
  • the first half permeation material (112) and the photo-resist (120) are sequentially stacked on the substrate (102) formed with the blocking layer (110) by sputtering, chemical vapor deposition and the like.
  • the first half permeation materials (112) is preferably a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where suffix x is a natural number that changes according to main elements that are combined.
  • a composition of the first half permeation materials (112) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive.
  • the composition of the first half permeation materials (112) may be a composition of any one from a group of Cr x O y , Cr x CO y , Cr x O y N z , Si x O y , Si x O y N z , Si x CO y , Si x CO y N z , Mo x Si y , Mo x O y , Mo x O y N z , Mo x CO y , Mo x O y N z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z N Mo x Si y CO z N, Mo x Si y CO z , Ta x O y ,
  • the photo-resist (120) formed on the first half permeation material (112) is irradiated by laser beam and drawn, and the drawn photo-resist (120 is developed to allow the first half permeation material (112) to be exposed at a position where the transmissive area (S5) and the second half permeation area (S4) are supposed to be formed.
  • the first half permeation material (112) exposed with the photo-resist (120) left on the first half permeation material (112) as a mask is removed by etching process.
  • the blocking layer (110) and the first half permeation material (112) is stacked on a position where the blocking area (S1) is supposed to be formed.
  • the first half permeation material (112) is formed on the substrate (102) where the first and third permeation parts (S2, S3) are supposed to be formed.
  • the second permeation material (114) and the photo-resist (120) are sequentially stacked on the substrate (102) formed with the first half permeation material (112) by sputtering, chemical vapor deposition and the like.
  • the second half permeation materials (114) is preferably a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where suffix x is a natural number that changes according to main elements that are combined.
  • a composition of the second half permeation materials (114) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive.
  • the composition of the first half permeation materials (112) may be a composition of any one from a group of Cr x O y , Cr x CO y , Cr x O y N z , Si x O y , Si x O y N z , Si x CO y , Si x CO y N z , Mo x Si y , Mo x O y , Mo x O y N z , Mo x CO y , Mo x O y N z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z N Mo x Si y CO z N, Mo x Si y CO z , Ta x O y ,
  • the second half permeation material (114) selectively etchable with Cr out of the listed half permeation materials may be used.
  • the second half permeation material (114) must be formed with half permeation materials having a different etching ratio from that of the first half permeation material (112). That is, the second half permeation material (114) must employ a half permeation material having an etching ratio different from that of the first half permeation material (112), so that only the second half permeation material (114) exposed as A area illustrated in FIG.9 is etched, and the first half permeation material (112) formed underneath the second half permeation material (114) is not etched.
  • the photo-resist (120) is drawn at a position where the transmissive area (S5) and the first half permeation area (S3) are supposed to be formed and developed, whereby the second half permeation material (114) is exposed.
  • the photo-resist (120) is irradiated and drawn at a position where the transmissive area (S5) and the first half permeation area (S3) are supposed be formed, and the drawn photo-resist area is developed and removed.
  • the photo-resist (120) is left on the second half permeation material (114) formed at a position where the blocking area (S1) and the second half permeation part (S4) and the third half permeation part (S2) are supposed to be formed, and the second half permeation material (114) is exposed at a position where the transmissive area (S5) and the first half permeation part (S3) are supposed to be formed.
  • the second half permeation material (114) is etched and removed, where second half permeation material (114) is exposed to a position where the transmissive area (S5) and the first half permeation part (S3) are supposed to be formed using the photo-resist (120) left on the second half permeation material (114) as a mask. Successively, the photo-resist (120) remaining on the second half permeation material (114) is removed by stripping process.
  • the blocking area (S1) stacked on the substrate (102) with the blocking layer (110), the first half permeation material (112) and the second half permeation material (114) is formed, the first half permeation part (S3) stacked on the substrate (102) with the second half permeation material (114) is formed, the first half permeation part (S3) stacked on the substrate (102) with the first half permeation material (112) is formed, the second half permeation part (S4) stacked on the substrate (102) with the second half permeation material (114) is formed, the third half permeation part (S2) stacked on the substrate (102) with the first half permeation material (112) and the second half permeation material (114) is formed, and the transmissive area (S5) on which the substrate (102) is exposed is formed.
  • FIGS. 4a to 4ih are cross-sectional views illustrating a manufacturing method of a half tone mask according to the second exemplary embodiment of FIG.2.
  • the first permeation material (112) and the photo-resist (120) are sequentially stacked on the substrate (102) by sputtering, chemical vapor deposition and the like.
  • the first half permeation materials (112) is preferably a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where suffix x is a natural number that changes according to main elements that are combined.
  • a composition of the first half permeation materials (112) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive.
  • the composition of the first half permeation materials (112) may be a composition of any one from a group of Cr x O y , Cr x CO y , Cr x O y N z , Si x O y , Si x O y N z , Si x CO y , Si x CO y N z , Mo x Si y , Mo x O y , Mo x O y N z , Mo x CO y , Mo x O y N z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z N Mo x Si y CO z N, Mo x Si y CO z , Ta x O y ,
  • the photo-resist (120) formed on the first half permeation material (112) is irradiated by laser beam and drawn, whereby the drawn photo-resist (120) is developed and the first half permeation material (112) is exposed at a position where the second half permeation part (S4) is supposed to be formed.
  • the first half permeation material (112) exposed using the photo-resist (120) left on the substrate (102) as a mask is removed by etching process.
  • the substrate (102) is exposed at a position where the second half permeation material (114) is supposed to be formed by the first half permeation material (112) being removed.
  • the second permeation material (114) and the photo-resist (120) are sequentially stacked on the substrate (102) formed with the first half permeation material (112) by sputtering, chemical vapor deposition and the like.
  • the second half permeation materials (114) is preferably a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where suffix x is a natural number that changes according to main elements that are combined.
  • a composition of the second half permeation materials (114) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive.
  • the composition of the second half permeation materials (114) may be a composition of any one from a group of Cr x O y , Cr x CO y , Cr x O y N z , Si x O y , Si x O y N z , Si x CO y , Si x CO y N z , Mo x Si y , Mo x O y , Mo x O y N z , Mo x CO y , Mo x O y N z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z , Mo x Si y O z N Mo x Si y CO z N, Mo x Si y CO z , Ta x O y ,
  • the second half permeation material (114) selectively etchable with Cr out of the listed half permeation materials may be used.
  • the second half permeation material (114) uses a half permeation material having an etching ratio different from that of the first half permeation material (112). That is, the second half permeation material (114) must employ a half permeation material having an etching ratio different from that of the first half permeation material (112), so that only the second half permeation material (114) exposed as B area illustrated in FIG. 16 is etched, and the first half permeation material (112) formed underneath the second half permeation material (114) is not etched.
  • the photo-resist (120) formed on the second half permeation material (114) is irradiated by laser beam and drawn, where the drawn photo-resist (120) is developed to allow the second half permeation material (114) to be exposed at a position where the transmissive area (S5) and the first half permeation area (S3) are supposed to be formed.
  • the second half permeation material (114) is removed by etching process, using the photo-resist (120) left on the second half permeation material (114) as a mask.
  • the first half permeation part (S3) formed with the first half permeation material (112), the second half permeation part (S4) formed with the second half permeation material (114), and the third half permeation part (S2) stacked with the first and second half permeation materials (112, 114) are formed. Furthermore, the first half permeation material (112) is formed at a position where the transmissive area (S5) is supposed to be formed, and the first and second half permeation materials (112, 114) are stacked and formed at a position where the blocking area (S1) is supposed to be formed.
  • the blocking layer (110) and the photo-resist (120) are sequentially stacked on the substrate (102) formed with the second half permeation material (114) by sputtering, chemical vapor deposition and the like.
  • the blocking layer (110) may be formed with material capable of blocking the ultraviolet, e.g., may be formed with a film made of Cr and CrxOy.
  • the photo-resist (120) formed on the blocking layer (110) is irradiated by laser beam and drawn, where the drawn photo-resist (120) is developed to allow the blocking layer (110) to be exposed at a position where the transmissive area (S5) and the half permeation areas (S2, S3, S4) are supposed to be formed.
  • the exposed blocking layer (110) is removed by etching process at a position where the half permeation areas (S2, S3, S4) and the transmissive area (S5) are supposed to be formed using the photo-resist (120) left on the blocking layer (110) as a mask. Successively, the photo-resist (110) remaining on the blocking layer (110) is removed by stripping process.
  • the blocking area (S1) stacked on the substrate (102) with the first half permeation material (112), the second half permeation material (114) and the blocking layer (110) is formed, the first half permeation part (S3) formed with the first half permeation material (112) on the substrate (102), the second half permeation part (S4) formed with the second half permeation material (114) on the substrate (102), the third half permeation part (S2) stacked with the first and second half permeation materials (112, 114), and the transmissive area (S5) on which the substrate (102) is exposed, are formed.
  • the manufacturing method of the half tone mask according to the first and second exemplary embodiments of the present invention can reduce the number of processes through the processing procedures shown in FIGS. 2a to 2i and FIGS. 4a to 4i, thereby reducing the manufacturing time and costs.
  • the present invention is industrially applicable in that the half tone mask includes a half permeation area having multiple half permeation parts having mutually different transmittances using at least 2 half permeation materials, and a blocking area formed on an upper surface or a bottom surface of at least 2 half permeation materials, and the thus-configured half tone mask can simplify the processes as the number of processes is reduced and as the half permeation materials are selectively etched due to different etching ratios of the at least 2 half permeation materials.

Abstract

The present invention relates to a half tone mask and a manufacturing method of the same configured to reduce the number of processes of manufacturing the half tone mask having multiple half permeation units, thereby reducing the time and manufacturing costs, wherein the half tone mask comprises: a substrate; a transmissive area formed on the substrate for transmitting irradiated light of a predetermined wavelength range; and a half permeation area having multiple half permeation units having 2 or more mutually different transmittances to a predetermined wavelength range of light irradiated on the substrate using 2 or more half permeation materials.

Description

HALF TONE MASK AND MANUFACTURING METHOD OF THE SAME
The present invention relates to a half tone mask and a manufacturing method of the same configured to reduce the number of processes of manufacturing the half tone mask having multiple half permeation units, thereby reducing the time and manufacturing costs.
Generally, a liquid crystal display (LCD) controls the light transmittance of a liquid crystal having a dielectric anisotropy using an electric field to thereby display a picture. To this end, the LCD includes a liquid crystal display panel for displaying a picture using a liquid crystal cell matrix and a driving circuit to drive the liquid crystal display panel. A related art liquid crystal display panel includes a color filter substrate and a thin film transistor substrate that are joined to each other having a liquid crystal therebetween.
The color filter substrate includes a black matrix, a color filter and a common electrode that are sequentially provided on an upper glass substrate.
The thin film transistor substrate includes a thin film transistor and a pixel electrode provided for each cell defined by a gate line crossing a data line on a lower glass substrate. The thin film transistor applies a data signal from the data line to the pixel electrode in response to a gate signal from the gate line. The pixel electrode formed from a transparent conductive layer supplies a data signal from the thin film transistor to drive the liquid crystal.
The thin film transistor substrate is formed through many mask processes, where, processes of forming a source electrode and a drain electrode and a semiconductor pattern are employed by a single half tone mask to reduce the number of mask processes.
At this time, the half tone mask includes a blocking area blocking ultraviolet, a half permeation area partially transmitting the ultraviolet, and a transmissive area transmitting the ultraviolet.
The half permeation area of the half tone mask may be formed with multiple half permeation parts each having a different light transmittance. At this time, a plurality of half permeation materials each having a different transmittance is employed to form the multiple half permeation area.
That is, a plurality of half permeation materials each having a different transmittance is employed for the multiple half permeation area in order to form half permeation parts each having a different transmittance on the half permeation area.
A manufacturing method of a half tone mask having 3 or more mutually different half permeation parts may be formed by stacking a first half permeation material which is patterned by photolithography process and etching process, on which a second half permeation material is stacked, the second half permeation material is patterned by photolithography process and etching process, a third half permeation material is stacked thereon, and the third half permeation material is patterned by photolithography process and etching process to form a half permeation area having 3 mutually different transmittances.
As noted above, the conventional manufacturing method suffers from disadvantages in that each of the mutually different half permeation materials is stacked and patterned by the photolithography process and etching process to form the multiple half permeation parts, whereby the number of processes increases to increase the time and costs.
The present invention is disclosed to obviate the above-mentioned disadvantages, and an advantage of the present invention is to provide a half tone mask and a manufacturing method of the same configured to reduce the number of processes of manufacturing the half tone mask having multiple half permeation units, thereby reducing the time and manufacturing costs.
In one general aspect of the present invention, there is provided a half tone mask, comprising: a substrate; a transmissive area formed on the substrate for transmitting irradiated light of a predetermined wavelength range; and a half permeation area having multiple half permeation units having 2 or more mutually different transmittances to a predetermined wavelength range of light irradiated on the substrate using 2 or more half permeation materials.
In some exemplary embodiments, the half tone mask may further include a blocking area having a blocking layer formed on an upper surface or a bottom surface of the at least two or more half permeation materials.
In some exemplary embodiments, the half permeation material may include as a main element one of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al2O3 or Si3N4, or a combined material mixed with at least the two or more elements, or includes the single main element or the combined material added with at least one of Cox, Ox, Nx, Cx, Fx, and Bx to the single main element or the combined material, where suffix x is a natural number and defines the number of each chemical element.
In some exemplary embodiments, each of the at least two half permeation materials has a different etching ratio.
In another general aspect of the present invention, a manufacturing method of a half tone mask, comprising: forming a blocking layer on a substrate on which a blocking area is to be formed; forming a half permeation area on the blocking layer-formed substrate half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials; and forming a blocking area stacked with the blocking layer and at least 2 half permeation materials and a transmissive area on which the substrate is exposed.
In some exemplary embodiments, the step of forming a half permeation area on the blocking layer-formed substrate half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials, comprises: sequentially stacking a first permeation material and a photo-resist on the blocking layer and exposing and developing the photo-resist so that a necessary area is exposed in the first half permeation material to remove the exposed first half permeation material; sequentially stacking a second half permeation material and photo-resist on the first half permeation material-formed substrate and exposing and developing the photo-resist so that a necessary area is exposed in the second half permeation material to remove the exposed second half permeation material; and forming a first half permeation part formed with the first half permeation material on the substrate, a second half permeation part formed with the second half permeation material and a third half permeation part stacked with the first and second half permeation materials.
In some exemplary embodiments, each of the at least two half permeation materials has a different etching ratio.
In some exemplary embodiments, the half permeation material is a material having as a main element one of Cr, Si, Mo, Ta, or Al, or is a combined material mixed with at least the two or more elements, or is a material added with at least one of Cox, Ox, Nx to the main element.
In still another general aspect of the present invention, a manufacturing method of a half tone mask, comprising: forming a half permeation area on a substrate a half permeation area having multiple half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials; sequentially stacking a blocking layer and a photo-resist on the multiple half permeation parts and exposing and developing the photo-resist so that a necessary area is exposed in the blocking layer to remove the exposed photo-resist; and forming a blocking area formed with a blocking layer on the at least two half permeation materials and forming a transmissive area on which the substrate is exposed.
In some exemplary embodiments, the step of forming a half permeation area on a substrate a half permeation area having multiple half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials, comprises: sequentially stacking a first permeation material and a photo-resist on the substrate and exposing and developing the photo-resist so that a necessary area is exposed in the first half permeation material to remove the exposed first half permeation material; sequentially stacking a second half permeation material and photo-resist on the first half permeation material-formed substrate and exposing and developing the photo-resist so that a necessary area is exposed in the second half permeation material to remove the exposed second half permeation material; and forming a first half permeation part formed with the first half permeation material on the substrate, a second half permeation part formed with the second half permeation material and a third half permeation part stacked with the first and second half permeation materials.
In some exemplary embodiments, each of the at least two half permeation materials has a different etching ratio.
In some exemplary embodiments, the half permeation material is a material having as a main element one of Cr, Si, Mo, Ta, or Al, or is a combined material mixed with at least the two or more elements, or is a material added with at least one of Cox, Ox, Nx to the main element.
The present invention is advantageous in that the half tone mask includes a half permeation area having multiple half permeation parts having mutually different transmittances using at least 2 half permeation materials, and a blocking area formed on an upper surface or a bottom surface of at least 2 half permeation materials, and the thus-configured half tone mask can simplify the processes as the number of processes is reduced and as the half permeation materials are selectively etched due to different etching ratios of the at least 2 half permeation materials.
FIG. 1 is a cross-sectional view illustrating a half tone mask according to a first exemplary embodiment of the present invention.
FIGS. 2 to 10 are cross-sectional views illustrating a manufacturing method of a half tone mask according to the first exemplary embodiment of FIG.1.
FIG.11 is a cross-sectional view illustrating a half tone mask according to a second exemplary embodiment of the present invention.
FIGS. 12 to 20 are cross-sectional views illustrating a manufacturing method of a half tone mask according to the second exemplary embodiment of FIG.2.
Exemplary embodiments of the present invention will be described in detail with reference to FIGS. 1 to 20.
FIG. 1 is a cross-sectional view illustrating a half tone mask according to a first exemplary embodiment of the present invention.
Referring to FIG.1, a half tone mask (100) includes a blocking area (S1) on a substrate (102), half permeation areas (S2, S3, S4) having multiple half permeation parts and a transmissive area (S5).
The substrate (102) may be a transparent substrate, for example, a quartz, that is capable of completely transmitting irradiated light of a predetermined wavelength range. However, the substrate is not limited to the quartz but may be any material that can transmit light.
The half permeation areas (S2, S3, S4) may include multiple half permeation parts to transmit light irradiated to the substrate in a predetermined wavelength range in mutually different transmittances. The half permeation areas (S2, S3, S4) may be formed by photo-resist patterns each having a different thickness after a development process by partially transmitting the ultraviolet in the exposing process of the photo-resist process.
To be more specific, the half permeation areas (S2, S3, S4) may include multiple half permeation parts having 3 or more mutually different transmittances by using at least two or more half permeation materials. At this time, if the half permeation areas (S2, S3, S4) are formed with half permeation materials, for example, first and second half permeation materials (112, 114), 3 half permeation parts each having a different transmittance may be formed.
That is, the half permeation areas (S2, S3, S4) may include a first half permeation part (S3) formed on the substrate with a first half permeation material (112) to allow light to be transmissive as much as X %, a second half permeation part (S4) formed with a second half permeation material (114) to allow light to be transmissive as much as Y %, and a third half permeation part (S2) stacked with first and second half permeation materials (112, 114) to allow light to be transmissive as much as Z %, where each of X%, Y% and Z% defines a light transmittance capable of transmitting the irradiated light as much as 10 ~ 90%.
At this time, the first and second half permeation materials (112, 114) may be a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where x is a natural number that changes according to combination of elements.
A composition of the first and second half permeation materials (112, 114) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive. In the present invention, the composition of the first and second half permeation materials (112, 114) may be a composition of any one from a group of CrxOy, CrxCOy, CrxOyNz, SixOy, SixOyNz, SixCOy, SixCOyNz, MoxSiy, MoxOy, MoxOyNz, MoxCOy, MoxOyNz, MoxSiyOz, MoxSiyOzN MoxSiyCOzN, MoxSiyCOz, TaxOy, TaxOyNz, TaxCOy, TaxOyNz, AlxOy, AlxCOy, AlxOyNz, AlxCOyNz, TixOy, TixOyNz, TixCOy, or a combination thereof.
Most preferably, if the first half permeation material (112) is formed with CrxOy, CrxCOy or CrxOyNz, the second half permeation material (114) selectively etchable with Cr out of the listed half permeation materials may be used. That is, the first half permeation material (112) must be formed with half permeation materials each having a different etching ratio among the listed half permeation materials.
Meanwhile, as shown in FIG.1, the half permeation area may include first, second and third half permeation parts each having a different transmittance, and may also include first to nth half permeation parts using multiple half permeation materials.
The blocking area (S1) is left with a photo-resist pattern after developing process by blocking the ultraviolet during exposing process. To this end, the blocking area (S1) is sequentially stacked on the substrate (102) with the blocking layer (110), the first half permeation material (112) and the second half permeation material (114) to block the ultraviolet.
Now, referring to FIG.3 illustrating a half tone mask (100) according to a second exemplary embodiment of the present invention, the blocking area (S1) may be sequentially formed on the substrate (102) with the first half permeation material (112), the second half permeation material (114) and the blocking layer (110). That is to say, the blocking area (S1) may be formed with the blocking layer (110) formed as a bottom structure formed underneath the first and second half permeation materials (112, 114), or may be formed with the blocking layer (110) formed as a top structure formed on the first and second half permeation materials (112, 114).
Now, a process of forming the half tone mask including the transmissive area (S5), the blocking area (S1) and the half permeation materials (112, 114) will be described with reference to FIGS. 2a to 2i.
Referring to FIG.2, the blocking layer (110) and the photo-resist (120) are sequentially stacked on the substrate (102) by sputtering, chemical vapor deposition and the like. The blocking layer (110) may be formed with a material capable of blocking the ultraviolet, and for example, the blocking layer may be formed by a film formed with Cr and CrxOy.
Referring now to FIG.3, the photo-resist (120) formed where the transmissive area (S5) and the half permeation materials (112, 114) are supposed to be formed is drawn and developed, whereby the blocking layer (110) is exposed. To be more specific, the photo-resist where the transmissive area (S5) and the half permeation materials (112, 114) are supposed to be formed is irradiated by laser beam, drawn, and the drawn photo-resist area is developed and removed.
As a result, the photo-resist (120) is left on the blocking layer (110) formed at where the blocking area (S1) is supposed to be formed, and the blocking layer (110) is exposed at where the transmissive area (S5) and the half permeation materials (112, 114) are supposed to be formed.
Now, referring to FIG.4, the blocking layer (110) exposed using the photo-resist (120) remaining on the substrate (102) as a mask is removed by etching process. The blocking layer (110) on the substrate (102) is left only at a position where the blocking area (S1) is supposed to be formed, and the substrate (102) is exposed at a position where the transmissive area (S5) and the half permeation areas (S2, S3, S4) are supposed to be formed.
Referring to FIG.5, the first half permeation material (112) and the photo-resist (120) are sequentially stacked on the substrate (102) formed with the blocking layer (110) by sputtering, chemical vapor deposition and the like. To be more specific, the first half permeation materials (112) is preferably a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where suffix x is a natural number that changes according to main elements that are combined.
A composition of the first half permeation materials (112) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive. In the present invention, the composition of the first half permeation materials (112) may be a composition of any one from a group of CrxOy, CrxCOy, CrxOyNz, SixOy, SixOyNz, SixCOy, SixCOyNz, MoxSiy, MoxOy, MoxOyNz, MoxCOy, MoxOyNz, MoxSiyOz, MoxSiyOzN MoxSiyCOzN, MoxSiyCOz, TaxOy, TaxOyNz, TaxCOy, TaxOyNz, AlxOy, AlxCOy, AlxOyNz, AlxCOyNz, TixOy, TixOyNz, TixCOy, or a combination thereof, where the suffixes x, y and z are natural numbers and define the number of each element. Most preferably, the first half permeation material (112) is formed with CrxOy, CrxCOy or CrxOyNz.
Now, referring to FIG.6, the photo-resist (120) formed on the first half permeation material (112) is irradiated by laser beam and drawn, and the drawn photo-resist (120 is developed to allow the first half permeation material (112) to be exposed at a position where the transmissive area (S5) and the second half permeation area (S4) are supposed to be formed.
Referring to FIG.7, the first half permeation material (112) exposed with the photo-resist (120) left on the first half permeation material (112) as a mask is removed by etching process. As a result, the blocking layer (110) and the first half permeation material (112) is stacked on a position where the blocking area (S1) is supposed to be formed. The first half permeation material (112) is formed on the substrate (102) where the first and third permeation parts (S2, S3) are supposed to be formed.
Now, referring to FIG.8, the second permeation material (114) and the photo-resist (120) are sequentially stacked on the substrate (102) formed with the first half permeation material (112) by sputtering, chemical vapor deposition and the like.
To be more specific, the second half permeation materials (114) is preferably a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where suffix x is a natural number that changes according to main elements that are combined.
A composition of the second half permeation materials (114) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive. In the present invention, the composition of the first half permeation materials (112) may be a composition of any one from a group of CrxOy, CrxCOy, CrxOyNz, SixOy, SixOyNz, SixCOy, SixCOyNz, MoxSiy, MoxOy, MoxOyNz, MoxCOy, MoxOyNz, MoxSiyOz, MoxSiyOzN MoxSiyCOzN, MoxSiyCOz, TaxOy, TaxOyNz, TaxCOy, TaxOyNz, AlxOy, AlxCOy, AlxOyNz, AlxCOyNz, TixOy, TixOyNz, TixCOy, or a combination thereof, where the suffixes x, y and z are natural numbers and define the number of each element.
Most preferably, if the first half permeation material (112) is formed with CrxOy, CrxCOy or CrxOyNz, the second half permeation material (114) selectively etchable with Cr out of the listed half permeation materials may be used.
The second half permeation material (114) must be formed with half permeation materials having a different etching ratio from that of the first half permeation material (112). That is, the second half permeation material (114) must employ a half permeation material having an etching ratio different from that of the first half permeation material (112), so that only the second half permeation material (114) exposed as A area illustrated in FIG.9 is etched, and the first half permeation material (112) formed underneath the second half permeation material (114) is not etched.
Referring to FIG.9, the photo-resist (120) is drawn at a position where the transmissive area (S5) and the first half permeation area (S3) are supposed to be formed and developed, whereby the second half permeation material (114) is exposed.
To be more specific, the photo-resist (120) is irradiated and drawn at a position where the transmissive area (S5) and the first half permeation area (S3) are supposed be formed, and the drawn photo-resist area is developed and removed. As a result, the photo-resist (120) is left on the second half permeation material (114) formed at a position where the blocking area (S1) and the second half permeation part (S4) and the third half permeation part (S2) are supposed to be formed, and the second half permeation material (114) is exposed at a position where the transmissive area (S5) and the first half permeation part (S3) are supposed to be formed.
Referring to FIG.10, the second half permeation material (114) is etched and removed, where second half permeation material (114) is exposed to a position where the transmissive area (S5) and the first half permeation part (S3) are supposed to be formed using the photo-resist (120) left on the second half permeation material (114) as a mask. Successively, the photo-resist (120) remaining on the second half permeation material (114) is removed by stripping process. As a result, the blocking area (S1) stacked on the substrate (102) with the blocking layer (110), the first half permeation material (112) and the second half permeation material (114) is formed, the first half permeation part (S3) stacked on the substrate (102) with the second half permeation material (114) is formed, the first half permeation part (S3) stacked on the substrate (102) with the first half permeation material (112) is formed, the second half permeation part (S4) stacked on the substrate (102) with the second half permeation material (114) is formed, the third half permeation part (S2) stacked on the substrate (102) with the first half permeation material (112) and the second half permeation material (114) is formed, and the transmissive area (S5) on which the substrate (102) is exposed is formed.
FIGS. 4a to 4ih are cross-sectional views illustrating a manufacturing method of a half tone mask according to the second exemplary embodiment of FIG.2.
Referring to FIG.12, the first permeation material (112) and the photo-resist (120) are sequentially stacked on the substrate (102) by sputtering, chemical vapor deposition and the like.
To be more specific, the first half permeation materials (112) is preferably a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where suffix x is a natural number that changes according to main elements that are combined.
A composition of the first half permeation materials (112) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive. In the present invention, the composition of the first half permeation materials (112) may be a composition of any one from a group of CrxOy, CrxCOy, CrxOyNz, SixOy, SixOyNz, SixCOy, SixCOyNz, MoxSiy, MoxOy, MoxOyNz, MoxCOy, MoxOyNz, MoxSiyOz, MoxSiyOzN MoxSiyCOzN, MoxSiyCOz, TaxOy, TaxOyNz, TaxCOy, TaxOyNz, AlxOy, AlxCOy, AlxOyNz, AlxCOyNz, TixOy, TixOyNz, TixCOy, or a combination thereof. Most preferably, the first half permeation material (112) is formed with CrxOy, CrxCOy or CrxOyNz, where the suffixes x, y and z are natural numbers and define the number of each element.
Referring to FIG.13, the photo-resist (120) formed on the first half permeation material (112) is irradiated by laser beam and drawn, whereby the drawn photo-resist (120) is developed and the first half permeation material (112) is exposed at a position where the second half permeation part (S4) is supposed to be formed.
Referring to FIG.14, the first half permeation material (112) exposed using the photo-resist (120) left on the substrate (102) as a mask is removed by etching process. As a result, the substrate (102) is exposed at a position where the second half permeation material (114) is supposed to be formed by the first half permeation material (112) being removed.
Referring to FIG.15, the second permeation material (114) and the photo-resist (120) are sequentially stacked on the substrate (102) formed with the first half permeation material (112) by sputtering, chemical vapor deposition and the like.
To be more specific, the second half permeation materials (114) is preferably a material having as a main element one of Cr, Si, Mo, Ta, Ti, Al or a compound mixed with at least the two or more elements, or a compound added with at least one of Cox, Ox, Nx to the main element material, where suffix x is a natural number that changes according to main elements that are combined.
A composition of the second half permeation materials (114) may be variably formed as long as part of the irradiated light of a predetermined wavelength range is transmissive. In the present invention, the composition of the second half permeation materials (114) may be a composition of any one from a group of CrxOy, CrxCOy, CrxOyNz, SixOy, SixOyNz, SixCOy, SixCOyNz, MoxSiy, MoxOy, MoxOyNz, MoxCOy, MoxOyNz, MoxSiyOz, MoxSiyOzN MoxSiyCOzN, MoxSiyCOz, TaxOy, TaxOyNz, TaxCOy, TaxOyNz, AlxOy, AlxCOy, AlxOyNz, AlxCOyNz, TixOy, TixOyNz, TixCOy, or a combination thereof. Most preferably, the first half permeation material (112) is formed with CrxOy, CrxCOy or CrxOyNz, where the suffixes x, y and z are natural numbers and define the number of each element.
Most preferably, if the first half permeation material (112) is formed with CrxOy, CrxCOy or CrxOyNz, the second half permeation material (114) selectively etchable with Cr out of the listed half permeation materials may be used.
The second half permeation material (114) uses a half permeation material having an etching ratio different from that of the first half permeation material (112). That is, the second half permeation material (114) must employ a half permeation material having an etching ratio different from that of the first half permeation material (112), so that only the second half permeation material (114) exposed as B area illustrated in FIG. 16 is etched, and the first half permeation material (112) formed underneath the second half permeation material (114) is not etched.
Referring to FIG.16, the photo-resist (120) formed on the second half permeation material (114) is irradiated by laser beam and drawn, where the drawn photo-resist (120) is developed to allow the second half permeation material (114) to be exposed at a position where the transmissive area (S5) and the first half permeation area (S3) are supposed to be formed.
Referring to FIG.17, the second half permeation material (114) is removed by etching process, using the photo-resist (120) left on the second half permeation material (114) as a mask.
As a result, the first half permeation part (S3) formed with the first half permeation material (112), the second half permeation part (S4) formed with the second half permeation material (114), and the third half permeation part (S2) stacked with the first and second half permeation materials (112, 114) are formed. Furthermore, the first half permeation material (112) is formed at a position where the transmissive area (S5) is supposed to be formed, and the first and second half permeation materials (112, 114) are stacked and formed at a position where the blocking area (S1) is supposed to be formed.
Referring to FIG.18, the blocking layer (110) and the photo-resist (120) are sequentially stacked on the substrate (102) formed with the second half permeation material (114) by sputtering, chemical vapor deposition and the like. The blocking layer (110) may be formed with material capable of blocking the ultraviolet, e.g., may be formed with a film made of Cr and CrxOy.
Referring to FIG.19, the photo-resist (120) formed on the blocking layer (110) is irradiated by laser beam and drawn, where the drawn photo-resist (120) is developed to allow the blocking layer (110) to be exposed at a position where the transmissive area (S5) and the half permeation areas (S2, S3, S4) are supposed to be formed.
Referring to FIG.20, the exposed blocking layer (110) is removed by etching process at a position where the half permeation areas (S2, S3, S4) and the transmissive area (S5) are supposed to be formed using the photo-resist (120) left on the blocking layer (110) as a mask. Successively, the photo-resist (110) remaining on the blocking layer (110) is removed by stripping process.
As a result, the blocking area (S1) stacked on the substrate (102) with the first half permeation material (112), the second half permeation material (114) and the blocking layer (110) is formed, the first half permeation part (S3) formed with the first half permeation material (112) on the substrate (102), the second half permeation part (S4) formed with the second half permeation material (114) on the substrate (102), the third half permeation part (S2) stacked with the first and second half permeation materials (112, 114), and the transmissive area (S5) on which the substrate (102) is exposed, are formed.
As noted above, the manufacturing method of the half tone mask according to the first and second exemplary embodiments of the present invention can reduce the number of processes through the processing procedures shown in FIGS. 2a to 2i and FIGS. 4a to 4i, thereby reducing the manufacturing time and costs.
While the present invention has been particularly shown and described with reference to the exemplary embodiment thereof, the general inventive concept is not limited to the above-described embodiment. It will be understood by those of ordinary skill in the art that various changes and variations in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
The present invention is industrially applicable in that the half tone mask includes a half permeation area having multiple half permeation parts having mutually different transmittances using at least 2 half permeation materials, and a blocking area formed on an upper surface or a bottom surface of at least 2 half permeation materials, and the thus-configured half tone mask can simplify the processes as the number of processes is reduced and as the half permeation materials are selectively etched due to different etching ratios of the at least 2 half permeation materials.

Claims (13)

  1. A half tone mask, comprising: a substrate; a transmissive area formed on the substrate for transmitting irradiated light of a predetermined wavelength range; and a half permeation area having multiple half permeation units having 2 or more mutually different transmittances to a predetermined wavelength range of light irradiated on the substrate using 2 or more half permeation materials.
  2. The half tone mask of claim 1, further comprising a blocking area having a blocking layer formed on an upper surface or a bottom surface of the at least two or more half permeation materials.
  3. The half tone mask of claim 1, further comprising a blocking area having a blocking layer formed between at least two or more half permeation materials.
  4. The half tone mask of claim 1, wherein the half permeation material includes as a main element one of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al2O3 or Si3N4, or a combined material mixed with at least the two or more elements, or includes the single main element or the combined material added with at least one of Cox, Ox, Nx, Cx, Fx, and Bx to the single main element or the combined material, where suffix x is a natural number and defines the number of each chemical element.
  5. The half tone mask of claim 1, wherein each of the at least two half permeation materials has a different etching ratio.
  6. A manufacturing method of a half tone mask, comprising: forming a blocking layer on a substrate on which a blocking area is to be formed; forming a half permeation area on the blocking layer-formed substrate half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials; and forming a blocking area stacked with the blocking layer and at least 2 half permeation materials and a transmissive area on which the substrate is exposed.
  7. The manufacturing method of claim 6, wherein the step of forming a half permeation area on the blocking layer-formed substrate half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials, comprises: sequentially stacking a first permeation material and a photo-resist on the blocking layer and exposing and developing the photo-resist so that a necessary area is exposed in the first half permeation material to remove the exposed first half permeation material; sequentially stacking a second half permeation material and photo-resist on the first half permeation material-formed substrate and exposing and developing the photo-resist so that a necessary area is exposed in the second half permeation material to remove the exposed second half permeation material; and forming a first half permeation part formed with the first half permeation material on the substrate, a second half permeation part formed with the second half permeation material and a third half permeation part stacked with the first and second half permeation materials.
  8. The manufacturing method of claim 7, wherein each of the at least two half permeation materials has a different etching ratio.
  9. The manufacturing method of claim 8, wherein the half permeation material includes as a main element one of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al2O3 or Si3N4, or a combined material mixed with at least the two or more elements, or includes the single main element or the combined material added with at least one of Cox, Ox, Nx, Cx, Fx, and Bx to the single main element or the combined material, where suffix x is a natural number and defines the number of each chemical element.
  10. A manufacturing method of a half tone mask, comprising: forming a half permeation area on a substrate a half permeation area having multiple half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials; sequentially stacking a blocking layer and a photo-resist on the multiple half permeation parts and exposing and developing the photo-resist so that a necessary area is exposed in the blocking layer to remove the exposed photo-resist; and forming a blocking area formed with a blocking layer on the at least two half permeation materials and forming a transmissive area on which the substrate is exposed.
  11. The manufacturing method of claim 10, wherein the step of forming a half permeation area on a substrate a half permeation area having multiple half permeation parts having 3 or more mutually different transmittances using at least two half permeation materials, comprises: sequentially stacking a first permeation material and a photo-resist on the substrate and exposing and developing the photo-resist so that a necessary area is exposed in the first half permeation material to remove the exposed first half permeation material; sequentially stacking a second half permeation material and photo-resist on the first half permeation material-formed substrate and exposing and developing the photo-resist so that a necessary area is exposed in the second half permeation material to remove the exposed second half permeation material; and forming a first half permeation part formed with the first half permeation material on the substrate, a second half permeation part formed with the second half permeation material and a third half permeation part stacked with the first and second half permeation materials.
  12. The manufacturing method of claim 11, wherein each of the at least two half permeation materials has a different etching ratio.
  13. The manufacturing method of claim 12, wherein the half permeation material includes as a main element one of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al2O3 or Si3N4, or a combined material mixed with at least the two or more elements, or includes the single main element or the combined material added with at least one of Cox, Ox, Nx, Cx, Fx, and Bx to the single main element or the combined material, where suffix x is a natural number and defines the number of each chemical element.
PCT/KR2010/003205 2009-05-21 2010-05-20 Half tone mask and manufacturing method of the same WO2010134774A2 (en)

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CN205880497U (en) * 2016-05-30 2017-01-11 鄂尔多斯市源盛光电有限责任公司 Mask plate
CN108761999A (en) * 2018-07-24 2018-11-06 京东方科技集团股份有限公司 Mask plate and preparation method thereof, array substrate and preparation method thereof, display device

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CN102460645A (en) 2012-05-16
KR101186890B1 (en) 2012-10-02
WO2010134774A3 (en) 2011-02-24
JP2012527638A (en) 2012-11-08
CN102460645B (en) 2015-03-18
TWI434133B (en) 2014-04-11
JP5432369B2 (en) 2014-03-05
KR20100125575A (en) 2010-12-01

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