TW201035673A - Multitone photomask and method of manufacturing the same - Google Patents

Multitone photomask and method of manufacturing the same Download PDF

Info

Publication number
TW201035673A
TW201035673A TW098139163A TW98139163A TW201035673A TW 201035673 A TW201035673 A TW 201035673A TW 098139163 A TW098139163 A TW 098139163A TW 98139163 A TW98139163 A TW 98139163A TW 201035673 A TW201035673 A TW 201035673A
Authority
TW
Taiwan
Prior art keywords
semi
film
transmissive
line
light
Prior art date
Application number
TW098139163A
Other languages
Chinese (zh)
Inventor
Michiaki Sano
Kazuhisa Imura
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW201035673A publication Critical patent/TW201035673A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)

Abstract

A multitone photomask according to this invention has a transfer pattern which has a light transmitting portion and at least two light semi-transmitting portions including first and second light semi-transmitting portions different in film structure. In order to form the transfer pattern, first and second light semi-transmitting films having predetermined transmittances are formed on a transparent substrate and subjected to predetermined patterning steps. With respect to a wavelength within a range of i-ray to g-ray, the transmittance of the first light semi-transmitting portion has a wavelength dependency substantially equal to that of the transmittance of the second light semi-transmitting portion.

Description

201035673 六、發明說明： 【發明所屬之技術領域】 本發明係關於在光微影步驟中所使用之多調式光罩及其 製造方法。 【先前技術】 歷來，在液晶顯示裝置之電子元件之製造中，係利用光 微影步驟，對於在所要蝕刻之被加工層上所形成之抗蝕 膜，使用具特定之圖案之光罩，在特定之曝光條件下進行 曝光而轉印圖案，並將該抗蝕膜顯像而藉此形成抗蝕圖 案。而後將該抗蝕圖案作為遮罩而蝕刻被加工層。 在光罩中，例如如圖5所示，有多調式光罩，其形成有 具備遮擋曝光光之遮光部51、透過曝光光之透光部53、及 透過曝光光之一部分之半透光部52的轉印圖案。該多調式 光罩由於可依區域而使曝光光之光量選擇性相異，故藉由 使用該多調式光罩進行曝光、顯像，可形成至少具有;種 厚度之殘膜值（包含殘膜值0)之抗蚀圖案。此種實現具有複 數個相異之殘膜值之抗蝕圖案之多調式光罩，在液晶顯示 裝置等之電子it件之製造時，因可減少所使用之光罩之個 數，而旎促使光微影步驟效率化，故非常有用。 在圖5中’轉印圖案係以遮光部、半透過部、遮光部之 順序毗連於基板面上而阶¥ 一 而配置’ S亥專之轉印圖案可有效地用 於薄膜電晶體之製造。 上述之多調式光罩之遮光部51係以如鉻膜之遮光膜才 半透光部52係例如藉由具有使曝光光之-部分透過έ 144683.doc 201035673 期望之透射率（以下將光透射率記為透射率）的半透光膜而 構成（日本特開2006-268035號公報）。 【發明内容】 [發明所欲解決之問題] 若使用如上所述之多調式光罩，將轉印圖案轉印至被轉 印物體上之抗蝕膜，則在半透光部與遮光部之交界等之圖 案交界，會產生曝光光之繞射，使得透過光之強度分佈成201035673 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a multi-tone mask used in the photolithography step and a method of manufacturing the same. [Prior Art] Conventionally, in the manufacture of electronic components of a liquid crystal display device, a photomask is used, and a mask having a specific pattern is used for a resist film formed on a layer to be processed to be etched. The pattern is transferred by exposure under specific exposure conditions, and the resist film is developed to thereby form a resist pattern. Then, the resist pattern is used as a mask to etch the processed layer. In the reticle, for example, as shown in FIG. 5, there is a multi-modulation reticle formed with a light shielding portion 51 that blocks exposure light, a light transmission portion 53 that transmits exposure light, and a semi-transmissive portion that transmits a part of exposure light. Transfer pattern of 52. Since the multi-modulation reticle can selectively differ in the amount of light of the exposure light according to the region, by using the multi-mode reticle for exposure and development, a residual film value (including a residual film) having at least one thickness can be formed. A resist pattern of value 0). Such a multi-mode mask for realizing a resist pattern having a plurality of different residual film values, in the manufacture of an electronic device such as a liquid crystal display device, can reduce the number of photomasks used, and The photolithography step is very efficient, so it is very useful. In Fig. 5, the 'transfer pattern is arranged in the order of the light-shielding portion, the semi-transmissive portion, and the light-shielding portion, and is arranged in the order of the substrate. The transfer pattern can be effectively used for the manufacture of the thin film transistor. . The light-shielding portion 51 of the multi-modulation reticle described above is a light-shielding film such as a chrome film, and the semi-transmissive portion 52 is transmitted through a desired transmittance, for example, by transmitting a portion of the exposure light to 144 683.doc 201035673 (the light transmission is hereinafter) The semi-transmissive film having a transmittance of (the transmittance) is configured (JP-A-2006-268035). SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] When the multi-mode mask as described above is used, the transfer pattern is transferred to the resist film on the object to be transferred, and the semi-transmissive portion and the light-shielding portion are At the junction of the borders, etc., a diffraction of the exposure light is generated, so that the intensity of the transmitted light is distributed.

❹ 為某種程度和緩之曲線。例如如圖5所示，在被夾於2個遮 光部51間之半透光部52中，透過光之強度分佈成為和緩之 山型，該趨勢係當線寬越小越顯著（參照圖6(a)、。因 此，由於透過線寬相異之半透光部之光量相異，故一旦將 轉印圖案轉印至被轉印物體上之抗蝕膜，則在線寬之相異 部分其曝光量將會相異’而使殘膜值相異。本專利申請人 著眼於該等之觀點，提出在線寬各自相異之半透光部設置 具各自㈣之膜透射率之膜種之半透光膜，使相對於被轉 印物體之曝光量大致相等，藉此在被轉印物體上獲得均一 之抗蝕殘膜值。 然而，若使用膜種相異之半透光獏而構成相異之半透光 部’則由於構成各半透光膜之材料具各自之透射率波長依 存性，故當線寬對光之透射率有影響之情況 量大致相等而得到均一之殘膜值，有必要在各自 部，掌握抗蚀膜之殘膜值與透射率之間之關聯，而使其條 件之訂定變得非常複雜。 在液晶顯示裝置等之製造過程中，若要謀求進一步之效 144683.doc 201035673 率化與低成本’可考慮使用調數較多之多調式光罩。例 如，若使用具相異之透射率且形成有複數種之半透光部之 多調式光罩，則可Μ個遮罩實施3次以上之光微影加工步 驟、。基於上述之㈣’在多調式光罩中，遂有使用複數種 透過曝光光之-部分之半透光性之膜，而製造結構較先前 更複雜之遮罩的需求。 然而，在上述之遮罩之各個半透光部巾，若彡射率之波 長依存性相I，則根據所使用之光源之分光特性，在被轉 印物體上之抗#膜上所形成之抗蚀圖案之階差形狀將變得 不同，以致在將該抗蝕圖案作為遮罩而加工薄膜時之抗蝕 圖案之階差形狀等之條件設定將明顯變得繁雜。#，在使 用具某種刀光特性之光源進行曝光時，即使是以設置期望 之抗餘Ρ皆差的方式而設計之光罩，纟使用肖其相異之光源 進仃曝光之情況下，亦會產生未必能形成期望之抗蝕階差 之問題。 β本發明係鑑於上述之問題點而開發完成者，其目的在於 提供-種多調式光罩及其製造方&，其不需要訂定複雜之 條件，且亦考慮到線寬所引起之對透射率之影響，將相對 於被轉印物體之曝光量控制在期望之範圍，而可得到可容 易°又疋被轉印物體之加工條件之抗触殘膜值。 [解決問題之手段] 本發明之多調式光罩係在透明基板上，形成各自具特定 之分光透射率之第1半透光膜及第2半透光膜，並分別施以 特疋之圖案化，藉此形成包含透光部、及包括膜結構互異 144683.d〇c 201035673 之第1半透光部及第2半透光部之至少2個I透光部之轉印 圖案而成者，其特徵在於，上述P半透光部之相對於i線 g線範圍内之波長的透射率波長依存性，與上述第2半透 光部之相對於i線〜㈣範圍内之波長的透射率波長依存性 大致相等。 ❹ Ο 此處’ 2個半透光部之透射率波長依存性大致相等，是 指在各個半透光部所使用之膜結構下，在i線〜心線範圍中 之透射率變化曲線為實質性平行’具體而言，將在i線〜§ 線Ιε圍内之透射率變化取直線近似時，可使相互之斜率差 異在湖o〇nm以内。較佳為2%/⑽nm以内。如後述之實 ，例所示，更佳為1%/⑽nm。又，上述之第—半透光 部、第二半透光部之膜結構可為單一之半透光膜，亦 積層之半透光膜。(此處透射率是指將包含透明基 先部之透射率設為100%時之相對的透射率 根據該結構’由於第1半透光部與第2半透光部具有相對 2互相等線範圍内之波長的透射率波長依存性 ^勢此，於被轉印物體之加工程序時不需要訂定複雜之停 牛。此處，上述透射率波長依存性除了因上述半透斤 :用之半透光膜所引起之影響外，亦可以包含因圖 寬不同所引起之影響的形式進行調整。 線 在本發明之多調式光軍中，上述至少2料 ，在透明基板上形成上述第t半透光膜而構成之第心包 及在透明基板上形成有上述第2半透光膜之第 井 部。或亦可將形成上述第1半透明膜而構成之部分作為第光! 144683.doc 201035673 透光部，將積層第1、2之半透明膜之部分作為第2半透光 部。再者，除此之外，亦可包含在透明基板上進一步形成 其他半透光膜之半透光部。 在本發明之多調式光罩中，上述第丄半透光膜及上述第2 半透光膜宜為分別具有在相對於將i線、h線及g線以丄： 1 · 1之比例混合之光源之透射率、與相對於丨線、h線、或 g線之透射率之間的各個透射率差為3 %以Θ之透射率波長 特性。此處，將透明基板之透射率設為1〇〇%。 在本發明之多調式光罩中，較佳為上述^半透光膜及 上述第2半透光膜之—者為含鉻化合物，另—者為含石夕化 銦化合物’以使上述p半透域及上述半透光膜之相 對於i線〜g線範圍内之波長的透射率波長依存性大致相等 的方式，調整上述含鉻化合物或含石夕化翻化合物中之添加 元素之含量。 第1半透光膜與第2半透光膜之相對於曝光光源之透射率 可彼此㈣，亦可互異。將所使用之半透光膜設為2種， 而使積層結構相異等，在欲得到5調（除遮光部、透光部之 外含3種半透光部）時’第卜2半透光膜之相對於曝光光源 之透射率宜為相異。此時，第卜2半透光膜之相對於光源 之透射率宜為2%以上6〇%以下。此處，曝光光源可為具i 線〜g線範圍之任意之波長分佈者。 、 於光罩之面内有透射率之分佈之情況下，可依中心值而 設疋為各個半透光膜之透射率。 本發明之多調式光罩之製造方法之特徵在於具備以下之 I44683.doc 201035673 :準備在透明基板上依序積層第2半透光膜及遮光膜❹ A curve that is somewhat gentle. For example, as shown in FIG. 5, in the semi-transmissive portion 52 sandwiched between the two light-shielding portions 51, the intensity distribution of the transmitted light becomes a gentle mountain type, and the tendency is remarkable as the line width is smaller (refer to FIG. 6). (a). Therefore, since the amount of light passing through the semi-transmissive portions having different line widths is different, once the transfer pattern is transferred to the resist film on the object to be transferred, the difference in line width is The amount of exposure will be different, and the residual film values will be different. The applicant of the present application has focused on the viewpoints of the above, and proposes that the semi-transmissive portions having different widths in the line width are provided with half of the film type having the film transmittance of each (4). The light transmissive film makes the exposure amount with respect to the object to be transferred substantially equal, thereby obtaining a uniform resist residual film value on the object to be transferred. However, if the film type is different from the semi-transparent 貘, the phase is formed. In the case of the semi-transmissive portion, since the materials constituting each of the semi-transmissive films have respective transmittance wavelength dependences, the amount of the line width affects the transmittance of light is substantially equal, and a uniform residual film value is obtained. It is necessary to know the relationship between the residual film value and the transmittance of the resist film in the respective parts, and The setting of the conditions becomes very complicated. In the manufacturing process of liquid crystal display devices, etc., in order to achieve further efficiency, it is conceivable to use a multi-modulation reticle with a large number of modulations. If a multi-tone mask having a different transmissivity and a plurality of semi-transmissive portions is used, the photolithography processing step of three or more masks can be performed for one mask. Based on the above (four) In the tunable reticle, there is a need to use a plurality of semi-transmissive films that transmit part of the exposure light to create a structure that is more complex than the previous one. However, in the semi-transmissive portion of the above-mentioned mask The towel, if the wavelength dependence of the wavelength dependence phase I, the step shape of the resist pattern formed on the anti-film on the object to be transferred will be different depending on the spectral characteristics of the light source used. The condition setting of the step shape and the like of the resist pattern when the resist pattern is processed as a mask is significantly complicated. When a light source having a certain knife light characteristic is used for exposure, even if Set the desired anti-equivalent A mask designed in a poor manner, in the case of using a different light source for exposure, also causes a problem that does not necessarily form a desired resist step. β The present invention has been developed in view of the above problems. The complete object is to provide a multi-tone mask and its manufacturer & it does not need to set complicated conditions, and also considers the influence of the line width on the transmittance, which will be transferred relative to the transfer. The exposure amount of the object is controlled within a desired range, and the anti-contact film value of the processing condition of the object to be transferred can be easily obtained. [Means for Solving the Problem] The multi-mode mask of the present invention is on a transparent substrate. Forming a first semi-transmissive film and a second semi-transmissive film each having a specific spectral transmittance, and patterning each of them, thereby forming a light-transmitting portion, and including a film structure 144683. D〇c 201035673 The transfer pattern of at least two I-transmissive portions of the first semi-transmissive portion and the second semi-transmissive portion is characterized in that the P-transmissive portion is opposite to the i-line g The wavelength dependence of the transmittance of the wavelength within the line range, and the second A light-transmitting portion is substantially equal to the relative wavelength dependence of the transmittance of the i-line wavelength in the range of ~㈣. ❹ Ο Here, the transmittance dependence of the transmittance of the two semi-transmissive portions is approximately equal, which means that the transmittance change curve in the i-line to the core line is substantially the same under the film structure used in each semi-transmissive portion. Sexual Parallel 'Specifically, when the transmittance changes within the i-line to the § line Ι ε are approximated by a straight line, the slope difference between the two can be made within the lake o 〇 nm. It is preferably within 2%/(10) nm. As will be described later, the examples are more preferably 1%/(10) nm. Further, the film structure of the first semi-transmissive portion and the second semi-transmissive portion may be a single semi-transmissive film or a semi-transparent film laminated. (Transmittance here means the relative transmittance when the transmittance of the transparent base-containing portion is set to 100%. According to the configuration, the first semi-transmissive portion and the second semi-transmissive portion have two opposite sides. The wavelength dependence of the wavelength in the range depends on the fact that it is not necessary to set a complicated stoppage when processing the object to be transferred. Here, the wavelength dependence of the above transmittance is not limited by the above-mentioned semi-transparent In addition to the influence caused by the semi-transmissive film, it may also include adjustment in the form of the influence caused by the difference in the width of the pattern. In the multi-tone optical army of the present invention, the at least two materials are formed on the transparent substrate. a first core portion formed of a semi-transmissive film and a first well portion on which the second semi-transmissive film is formed on the transparent substrate. Alternatively, a portion formed by forming the first semi-transparent film may be used as the first light! 144683.doc 201035673 The light transmitting portion is formed as a second semi-transmissive portion by stacking the first and second semi-transparent films. In addition, a semi-transparent film may be further formed on the transparent substrate to form another semi-transparent film. In the multi-tone mask of the present invention, Preferably, the second semi-transmissive film and the second semi-transmissive film respectively have a transmittance of a light source mixed with a ratio of 丄:1 · 1 with respect to i-line, h-line, and g-line, and relative to 丨The transmittance difference between the transmittances of the line, the h-line, or the g-line is 3% of the transmittance wavelength characteristic. Here, the transmittance of the transparent substrate is set to 1%. In the modulating reticle, preferably, the semi-transparent film and the second semi-transmissive film are chromium-containing compounds, and the other is an indium-containing indium compound to make the p semi-transmissive domain and the above The content of the added element in the chromium-containing compound or the cerium-containing compound is adjusted so that the transmittance of the semi-transmissive film is substantially equal to the wavelength dependence of the wavelength in the range of the i-line to the g-line. The transmittance of the light film and the second semi-transmissive film with respect to the exposure light source may be different from each other (four), or may be different from each other. The semi-transmissive film used may be two types, and the laminated structure may be different. 5 adjustment (except for the light-shielding portion and the light-transmitting portion, including three kinds of semi-transmissive portions), the second light-transmissive film relative to the exposure light source The transmittance of the second semi-transmissive film relative to the light source is preferably 2% or more and 6〇% or less. Here, the exposure light source may have an i-line to a g-line range. Any wavelength distribution is provided. When there is a distribution of transmittance in the plane of the mask, the transmittance of each semi-transmissive film can be set according to the central value. The method for manufacturing the multi-tone mask of the present invention It is characterized by having the following I44683.doc 201035673: preparing to laminate the second semi-transparent film and the light-shielding film on the transparent substrate in sequence

之光罩基底；在上述光罩基底上形成第丨抗蝕圖案；將上 述第1抗蝕圖案作為遮罩，將上述遮光膜藉由蝕刻而進行 圖案加工；在包含經上述上述圖案加工之遮光膜之基板面 上，形成第2抗蝕圖案；將上述第2抗蝕圖案作為遮罩，將 上述第2半透光膜藉由蝕刻而進行圖案加工；在包含經上 述圖案加工之第2半透光膜之基板面上，形成第丨半透光 膜，在形成上述第1半透光膜之基板面上，形成第3抗蝕圖 案；及將上述第3抗蝕圖案作為遮罩，將上述第1半透光膜 藉由银刻而進行圖案加…，上述糾半透光膜及上述 第2半透域係分別以相對於丨線〜§線範圍内之波長的透射 率波長依存性大致相等之材料構成。 明之多調式光罩之製造方法之特徵在於具備以下之 步驟：準備在透明基板上形成遮光膜之光草基底；在上述 ^罩基底上形成第1抗勒圖案；將上述第1抗钱圖案作為遮 ^上逑遮光膜藉由_而進行圖案加I;在包含經上 膜：圖案加工之遮光膜之基板面上，形成第2半透光 膜，在形成第2半透光膜其 將上述第2抗_荦作=Τ’形成第2抗_; 刻而…安 將上述第2半透光膜藉由姓 仃、加工；在包含經上述圖案 膜之基板面上m丨之弟2丰透先 光膜之A板面卜 透先膜；在形成有上述第1半透 率作為料Γ形成第3抗#圖案’·及將上述第3抗㈣ =遮=半透光模藉㈣刻而進行圖案加 半透光臈及上述第2半透光膜係分別以相 144683.doc 201035673 對於i線〜g線範圍内之波長的透射率波長依存性大致相等 之材料構成。 再者’本申請案亦包含如下之多調式光罩之製造方法， 其包含以下步驟：準備在透明基板上形成有第ι半透光 膜、第2半透光膜、及遮光膜之光罩基底；在上述光罩基 底上形成第1抗案；將上述p抗敍圖案作為遮罩，將 上述遮光膜藉由㈣而進行圖案加卫：在包含上述加工之 、‘、、光臈之基板面上’形成第2抗敍圖案；將上述第2抗雀虫圖 案作為遮罩，將上述第_半透光膜藉由姓刻而進行圖案 加工；在包含經上述圖案加工之第!或第2半透光膜之基板 面上，形成第3抗蚀圖t ;及將上述第3抗姓圖案作為遮 罩，將上述第i或第2半透光膜藉由蝕刻而進行圖案加工， 且上述第半透光膜及上述第2半透光臈係分別以相對於丨線 〜g線範圍内之波長的透射率波長依存性大致相等之材料構 成。 本發明之圖案轉印方法之特徵在於：其係使用上述多調 式光罩，藉由照射i線〜g線之波長區域之曝光光之曝光 機，而對被轉印物體上之抗姓膜轉印上述轉印圖案。 本發明之薄膜電晶體之製造方法之特徵在於：其係使用 上述圖案轉印方法而製造薄膜電晶體。 [發明之效果] 本發明之多調式光罩係在透明基板上，形成各自具特定 之透射率之第1半透光膜及第2半透光膜，並分別施以特定 之圖案化，藉此形成包含透光部、及膜結構互異之至少2 144683.doc •10- 201035673 個半透光部之轉印圖案而成者，其巾，由於±述第i半透 光部之相對於i線〜g線範圍内之波長之透射率波長依存 性，與上述第2半透光部之相對於丨線〜g線範圍内之波長之 透射率波長依存性大致相等’故在使用該光罩之被轉印物 體之加工步驟中，不需要訂定複雜之條件，而可獲得均一 之殘膜值。 【實施方式】 〇 卩了’就本發明之實施形態參照附加圖式進行詳細地說 明。 ❹ 如上所述，在使用膜種相異之半透光膜（具膜特有之透 射率、亦稱作膜透射率者）而構成相異之半透光部之情況 下’若構成各自t半透光膜之材料之透射率具有因波長而 異之依存性，則必須掌握對應各自之半透光部而形成於被 轉印物體之抗㈣之殘膜值與曝光量等之間之關聯，從而 其訂定條件將變得非常複雜。再者，在此處假設不會產生 因微細之圖案線寬所引起之透射率波長依存性之影響者。 在圖⑽中，顯示以半透光膜（♦標記）之相對W線〜· 範圍内之波長之透射率波長依存性，與第2半透光膜（標 記）之相對於i線〜g線範圍内之波長之透射率波長依存性： 異之情況之組合。即，圖1⑻示例表示第1半透光膜之透射 率波長依存性之特性曲線之斜率（變化率）大於表示第2半透 光膜之透射率波長依存性之特性曲線之斜率（變化率）之产 況。具體而言’在圖1(b)所示之實例中，第i及第2半透: 膜之透射率相對於335 nm之波長分別為57%及⑽，該波 144683.doc 201035673 長之透射率之差為21%。另一方面，在g線之波長（436 nm) 下，第1及第2半透光膜之透射率分別為72%及42%，該波 長之透射率之差為30%。因此，在圖1(b)所示之實例之情 況，每100 nm之透射率之差異高達9%。在將該等之第i、 第2半透光膜分別形成於透明基板上，而成為第丨、第2半 透光部時，該2種半透光部之透射率其各個波長依存性相 異。因此，即使將特定之光源作為前提並假定兩者之透射 率差而製造遮罩，在使用具有與上述特定之光源相異之分 光特性之光源下，亦無法得到假定之透射率差。因此，為 使欲使用該遮罩而製造之元件之加工條件穩定，有必要訂 疋複雜之條件。再者，積層該2個膜，並使用透射率低之 半透光部時，由於積層膜（▲標記）之相對於i線〜g線範圍内 ^波長之透射率波長依存性，與第丨或第2半透光膜之透射 =波長依存性相異，故將產生與上述同樣之問題。即，如 y，圖（b)可知’由於第丨半透光膜之透射率波長依存性、第 半透光膜之透射率波長依存性及積層膜之透射率波長依 存性各不相同，故在基板内，並存著以第1半透光膜所構 成之半透光部、以第2半透光膜所構成之半透光部及以積 層模所構成之半透光部之情況下，有必要掌握假定某曝光 光源日:之各自之半透光膜及積層m中、抗蝕膜之殘膜值與 f 透射率之間之關聯，從而使其訂定條件變得非常 複雜。 本發明者等鑑於上述之問題，如圖i⑷所示，將 光膜（畚i® 1 丁处 τ。己）之相對於i線〜g線範圍内之波長之透射率波長 144683.doc 201035673 ❹ ❹ 依存性、與第2半透光膜（標記）之相對於i線〜g線範圍内 之波長之透射率波長依存性設計為大致相等。即，在圖 l(a)所示之實例中，第1及第2半透光膜相對於335 nm之波 長。分別顯示60%及36%之透射率/該波長之透射率之差為 另方面，相對於g線（436 nm)之波長，第1及第2半 透光膜分別顯示68%及42%之透射率，相對於該波長之透 2率之差為26%。其結果’可判斷在圖i⑷所示之實例之 情況，每100 nm之透射率之差異抑制在2%。 此時，積層膜（▲標記）之相對於i線〜匕線範圍内之波長之 透射率波長依存性亦為大致相等。由於藉由選擇該等之膜 種，即使在基板内並存著以第！半透光膜所構成之半透光 部、，以第2半透光膜所構成之半透光部及以積層膜所構成 :丰透光部之情況下，亦可大致將其透射率差控制為一 定’故使用遮罩而在被轉印物體上欲形成具期望之階差量 之抗钮圖案時之條件設定為容易。再者，本發明係發現， 於半透光部之線寬變細、受到線寬之影響而對透射率產生 影響之情況時，可考慮線寬所造成之透射率或其光波長依 雜之影響，而調整半透光膜之透射率波長依存性而開發 元成者。 即，本發明之主要技術特徵在於’其係在透明基板上分 別形成各自具特定之透射率之第^半透光膜及第2半透光 膜，並分別施以特定之圖案化，藉此形成包含透光部、及 至少2個半透光部之轉印圖案之多調式光罩，其中，上述 第1半透光部之相對於i線〜§線範圍内之波長之透射率波長 144683.doc 13 201035673 依存性，與上述第2半透光部之相對於丨線〜g線範圍内之波 長之透射率波長依存性大致相等，藉此，可無需訂定使用 遮罩進行加工時之複雜之條件。 如上所述，在構成第丨半透光膜及第2半透光膜之材料具 有大致相等之相對於i線〜§線範圍内之波長之透射率波長 依存性的情況下，膜結構可制易得到各自之透射率之^ 料而形成。又’在製造遮罩之際，由於必須進行2次以上 之光微影步驟，故可考慮材料之蝕刻選擇性而選擇素材。 例$ ’可為如圖2所示之結才f。圖2⑷〜⑺係顯示本發明之 -實施形態之多調式光罩之透光部、遮光部、及半透光部 之膜結構。又’在圖2中，將遮光部設為人，將透 E，而將半透光部形成於透光部E至遮光部A之間。在圖2 之實例中’半透光部從毗連於於透光部£之區域至毗連於 遮光部A之區域為止，被劃分成第】及第2半透光部咖或 第1〜第3半透光部D〜B，而在各半透光部，如以下之說 明，形成各種半透光膜。 如圖2⑷所示之結構係為以下者：在透明基板^上，依 序形成遮光膜12、反射防止膜13、第】半透光膜14、及第2 半透光膜15 ’從而構成遮光部A，且在透明基板^上，依 序形成第1半透光膜u及第2半透光膜15，從而構成第2半 透光部B ’且在透明基板n上’形成第2半透光膜^從而形 成第1半透光部c者。再者，透光_藉由露出透明基板u 而構成。 如圖2⑻所示之結構係為以下者：在透明基板^上，依 144683.doc • 14· 201035673 序形成第1半透光膜14、第2半透光膜15、遮光膜以及反射 防止膜13，從而構成遮光部a，且在透明基板丨丨上，依序 形成第1半透光膜14、及第2半透光膜15，從而構成第2半 透光部B，且在透明基板u上，形成第丨半透光㈣作為第 1半透光部C。㈣，透光藉由露出透明基板而構成。 如圖2(c)所示之結構係為以下者：在透明基板丨丨上依 序形成第2半透光膜15、遮光膜12、反射防止膜13、及第工 半透光膜14,從而構成遮光部A，且在透明基板〖丨上，依 序形成第2半透光膜15、及帛【半透光膜“，從而構成第2 半透光部B’且在透明基板11JL，形成半透光㈣作為 第1半透光部C。再者，透光部骑由露出透明基板而構a photomask base; a second resist pattern formed on the mask base; the first resist pattern as a mask; the light shielding film is patterned by etching; and the shading including the pattern processing is performed a second resist pattern is formed on the substrate surface of the film; the second resist pattern is used as a mask, and the second semi-transmissive film is patterned by etching; and the second half including the pattern processing is included a second semi-transmissive film is formed on the substrate surface of the light-transmissive film, a third resist pattern is formed on the surface of the substrate on which the first semi-transmissive film is formed, and the third resist pattern is used as a mask. The first semi-transmissive film is patterned by silver etching, and the semi-transparent light-transmissive film and the second semi-transmissive region are respectively wavelength-dependent in transmittance with respect to a wavelength within a range of a 丨 line. Composition of approximately equal materials. The method for manufacturing a multi-mode mask of the present invention comprises the steps of: preparing a light-grass substrate on which a light-shielding film is formed on a transparent substrate; forming a first resist pattern on the mask substrate; and using the first anti-money pattern as Forming a pattern by adding _ to the upper light-shielding film; forming a second semi-transmissive film on the surface of the substrate including the upper film: pattern-treated light-shielding film, and forming the second semi-transmissive film The second anti-荦 Τ Τ Τ 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成The A-plate surface of the first light film is transparent to the first film; the first half-through rate is formed as the material to form the third anti-pattern ', and the third anti-four (=) = half-transparent mode is borrowed (four) Further, the pattern-added semi-transparent enthalpy and the second semi-transmissive film are respectively made of a material having a wavelength dependence of a transmittance of a wavelength in the range of i line to g line which is substantially equal to each other in the range of 144683.doc 201035673. Furthermore, the present application also includes the following method for manufacturing a multi-mode mask comprising the steps of: preparing a photomask having a first semi-transparent film, a second semi-transparent film, and a light shielding film formed on a transparent substrate; a substrate; a first resist is formed on the mask base; the p-anti-pattern is used as a mask, and the light-shielding film is patterned by (4): in the substrate including the processed, ',, and Forming a second anti-surgery pattern on the surface; using the second anti-spot pattern as a mask, patterning the first semi-transmissive film by surname; and including the above-mentioned pattern processing! a third resist pattern t is formed on the substrate surface of the semi-transmissive film; and the third anti-surname pattern is used as a mask, and the ith or second semi-transmissive film is patterned by etching, and Each of the first semi-transmissive film and the second semi-transmissive ytterbium is made of a material having substantially the same wavelength dependence of transmittance with respect to a wavelength within a range of the 丨 line to the g line. The pattern transfer method of the present invention is characterized in that the above-mentioned multi-tone mask is used to irradiate an anti-name film on an object to be transferred by an exposure machine that irradiates exposure light in a wavelength region of an i-line to a g-line. The above transfer pattern is printed. The method for producing a thin film transistor of the present invention is characterized in that a thin film transistor is produced by using the above pattern transfer method. [Effects of the Invention] The multi-tone mask of the present invention is formed on a transparent substrate to form a first semi-transmissive film and a second semi-transmissive film each having a specific transmittance, and are respectively patterned and patterned. The formation of the translucent portion and the transfer pattern of at least 2 144683.doc •10-201035673 semi-transmissive portions of the film structure are different, and the towel is compared with the The wavelength dependence of the wavelength in the range of the i-line to the g-line is substantially equal to the wavelength dependence of the wavelength of the second semi-transmissive portion with respect to the wavelength in the range of the 丨 line to the g line. In the processing step of the object to be transferred of the cover, it is not necessary to set complicated conditions, and a uniform residual film value can be obtained. [Embodiment] The embodiment of the present invention will be described in detail with reference to the accompanying drawings. ❹ As described above, in the case of using a semi-transparent film having a different film type (having a film-specific transmittance, also referred to as a film transmittance) to constitute a different semi-transmissive portion, When the transmittance of the material of the light-transmitting film differs depending on the wavelength, it is necessary to grasp the correlation between the residual film value of the anti-(four) formed on the object to be transferred and the exposure amount, etc., in accordance with the respective semi-transmissive portions. Therefore, its setting conditions will become very complicated. Further, it is assumed here that the influence of the wavelength dependence of the transmittance due to the line width of the fine pattern is not generated. In the diagram (10), the transmittance wavelength dependence of the wavelength in the range of the W-line to the semi-transmissive film (? mark) is shown, and the second semi-transmissive film (marker) is opposite to the i-line to the g-line. Transmittance of wavelengths in the range Wavelength dependence: A combination of different conditions. That is, FIG. 1 (8) exemplifies that the slope (change rate) of the characteristic curve of the transmittance wavelength dependence of the first semi-transmissive film is larger than the slope (rate of change) of the characteristic curve indicating the transmittance dependence of the transmittance of the second semi-transmissive film. The status of production. Specifically, in the example shown in Fig. 1(b), the ith and second semi-transmission: the transmittance of the film is 57% and (10) with respect to the wavelength of 335 nm, respectively, and the wave is 144683.doc 201035673 long transmission The difference between the rates is 21%. On the other hand, at the wavelength of the g line (436 nm), the transmittances of the first and second semi-transmissive films were 72% and 42%, respectively, and the difference in transmittance of the wavelength was 30%. Therefore, in the case of the example shown in Fig. 1(b), the difference in transmittance per 100 nm is as high as 9%. When the i-th and second semi-transmissive films are formed on the transparent substrate and become the second and second semi-transmissive portions, the transmittance of the two semi-transmissive portions is different in wavelength dependence. different. Therefore, even if a specific light source is used as a premise and a difference in transmittance between the two is assumed to produce a mask, a hypothetical transmittance difference cannot be obtained by using a light source having a spectral characteristic different from the above-described specific light source. Therefore, in order to stabilize the processing conditions of the components to be manufactured using the mask, it is necessary to set complicated conditions. In addition, when the two films are laminated and a semi-transmissive portion having a low transmittance is used, the wavelength dependence of the transmittance of the laminated film (▲ mark) with respect to the wavelength of the i-line to the g-line is the same as that of the third layer. Or the transmittance of the second semi-transmissive film is different depending on the wavelength dependency, so that the same problem as described above occurs. That is, as shown in y, in (b), it is understood that the wavelength dependence of the transmittance of the second semi-transmissive film, the wavelength dependence of the transmittance of the semi-transparent film, and the transmittance dependence of the transmittance of the laminated film are different. In the case where a semi-transmissive portion composed of a first semi-transmissive film, a semi-transmissive portion composed of a second semi-transmissive film, and a semi-transmissive portion formed by a laminated mold are present in the substrate, It is necessary to grasp the correlation between the residual film value and the f transmittance of the resist film in the respective semi-transmissive film and the laminated layer m, so that the setting conditions become very complicated. In view of the above problems, the inventors of the present invention, as shown in Fig. i (4), have a transmittance wavelength of a wavelength of a light film (畚i® 1 τ τ hex) with respect to a wavelength in the range of i line to g line 144683.doc 201035673 ❹ ❹ Dependence is designed to be substantially equal to the wavelength dependence of the transmittance of the second semi-transmissive film (marker) with respect to the wavelength in the range of the i-line to the g-line. That is, in the example shown in Fig. 1(a), the first and second semi-transmissive films are longer than the wavelength of 335 nm. The difference between the transmittances of 60% and 36%/the transmittance of the wavelengths is another, and the first and second semi-transmissive films show 68% and 42%, respectively, with respect to the wavelength of the g-line (436 nm). The difference in transmittance between the transmittances of the wavelengths was 26%. As a result, it can be judged that in the case of the example shown in Fig. i (4), the difference in transmittance per 100 nm is suppressed at 2%. At this time, the wavelength dependence of the transmittance of the laminated film (▲ mark) with respect to the wavelength in the range of the i-line to the 匕 line is also substantially equal. By selecting these kinds of membrane species, even in the substrate, there is a third! The semi-transmissive portion formed by the semi-transmissive film is composed of a semi-transmissive portion composed of the second semi-transmissive film and a laminated film: in the case of a light-transmitting portion, the transmittance may be substantially poor The control is such that it is easy to use a mask to set a resist pattern having a desired step amount on the object to be transferred. Furthermore, in the present invention, it is found that when the line width of the semi-transmissive portion is thinned and the influence of the line width is exerted on the transmittance, the transmittance due to the line width or the wavelength of the light may be considered. The effect is to adjust the transmittance dependence of the transmittance of the semi-transmissive film. That is, the main technical feature of the present invention is that "the semi-transparent film and the second semi-transmissive film each having a specific transmittance are formed on the transparent substrate, and each of them is specifically patterned. Forming a multi-mode mask comprising a light transmissive portion and a transfer pattern of at least two semi-transmissive portions, wherein the first semi-transmissive portion has a transmittance wavelength 144683 with respect to a wavelength within a range of the i-line to the § line .doc 13 201035673 Dependence, the wavelength dependence of the wavelength of the second semi-transmissive portion with respect to the wavelength in the range of the 丨 line to the g line is substantially equal, thereby eliminating the need to define a mask for processing. Complex conditions. As described above, in the case where the materials constituting the second semi-transmissive film and the second semi-transmissive film have substantially the same transmittance wavelength dependence with respect to the wavelength in the range of the i-axis line, the film structure can be made. It is easily formed by obtaining the respective transmittances. Further, when the mask is manufactured, since it is necessary to perform the photolithography step twice or more, the material can be selected in consideration of the etching selectivity of the material. The example $' can be as shown in Figure 2. Fig. 2 (4) to (7) show the film structure of the light transmitting portion, the light blocking portion, and the semi-transmissive portion of the multi-mode mask of the embodiment of the present invention. Further, in Fig. 2, the light-shielding portion is made of a person, and the semi-transmissive portion is formed between the light-transmitting portion E and the light-shielding portion A. In the example of FIG. 2, the semi-transmissive portion is divided into the first and second semi-transmissive parts or the first to third from the region adjacent to the light-transmitting portion £ to the region adjacent to the light-shielding portion A. The semi-transmissive portions D to B are formed into various semi-transmissive films in the respective semi-transmissive portions as described below. The structure shown in Fig. 2 (4) is such that the light-shielding film 12, the anti-reflection film 13, the semi-transmissive film 14, and the second semi-transmissive film 15' are sequentially formed on the transparent substrate. In the portion A, the first semi-transmissive film u and the second semi-transmissive film 15 are sequentially formed on the transparent substrate, thereby forming the second semi-transmissive portion B' and forming the second half on the transparent substrate n. The light-transmissive film is formed to form the first semi-transmissive portion c. Further, the light transmission is configured by exposing the transparent substrate u. The structure shown in FIG. 2 (8) is as follows: on the transparent substrate, the first semi-transmissive film 14, the second semi-transmissive film 15, the light shielding film, and the anti-reflection film are formed in the order of 144683.doc • 14·201035673. 13, the light-shielding portion a is formed, and the first semi-transmissive film 14 and the second semi-transmissive film 15 are sequentially formed on the transparent substrate, thereby forming the second semi-transmissive portion B, and on the transparent substrate On the u, the second semi-transmissive (four) is formed as the first semi-transmissive portion C. (4) The light transmission is formed by exposing the transparent substrate. The structure shown in FIG. 2( c ) is such that the second semi-transmissive film 15 , the light shielding film 12 , the anti-reflection film 13 , and the work semi-transmissive film 14 are sequentially formed on the transparent substrate ,. Thus, the light-shielding portion A is formed, and the second semi-transmissive film 15 and the [semi-transmissive film" are sequentially formed on the transparent substrate to form the second semi-transmissive portion B' and on the transparent substrate 11JL. The semi-transmissive (four) is formed as the first semi-transmissive portion C. Further, the light-transmitting portion is formed by exposing the transparent substrate

如圖2⑷所示之結構係為以下者：在透明基板u上依 序形成第2半透光膜15 '遮光膜12、反射防止膜13、及第！ 半透光膜14，從而構成遮光部A，且在透明基板η上形 成第2半透絲！5,而作為η半透光部Β，且在透明基板 11上’形成第1半透光膜14作為第丨半透光部（：。再者，透 光部Ε藉由露出透明基板丨丨而構成。 如圖2(e)所示之結構係為以下者：在透明基板U上，依 序形成遮光膜12、反射防止膜13、第2半透光膜15、及第工 半透光膜14,從而構成遮，且在透明基板^上，依 序形成第2半透光膜15、及第1半透光膜14,而作為第3半 透光部B，且在透明基板U上，形成第2半透光㈣而作為 第2半透光部C，且在透明基板上，形成第！半透光膜14 144683.doc •15- 201035673 作為第1半透光部D。再者，透光部E藉由露出透明基板】】 而構成。 如圖2(f)所示之結構係為以下者：在透明基糾上，依 序形成第2半透光膜！5、遮光膜12、反射防止膜13、及第】 半透光媒…而作為遮光部A,且在透明基板w，依序 形成第2半透光膜15、及第1半透光膜M，而作為第3半透 光《，且在透明基板11JL，形成第2半透光膜㈣作為第 透光部C，且在透明基板11上，形成第1半透光膜⑷乍 為第1半透光。PD。再者，透光部£藉由露出透明基板❹ 構成。 如圖2(e)、(f)所不之結構，其包含各個膜結構相異之第 1半透光部、第2半透光部、及第3半透光部。在此處，將 第1第2半透光膜單獨形成於透明基板上，再者，將第 1第2半透光膜在透明基板上積層而形成。再者，圖2之 結構係用於模式化顯示積層結構之一例，並不僅限於此。 又，圖中所示之圖案亦非反映實際之元件圖案者。 再者，在本說明書中，對於第1、第2、第3半透光部，〇 或第1、第2半透光膜，可根據需要而替換。再者，亦可使 用追加之半透光膜而形成更多之半透光部。 立作為透明基板U，可舉例如玻璃基板等。料使曝光光 邛刀透過之第1半透光膜、或第2半透光膜14、15之素材， 可使用鉻之氧化物、氮化物、碳化物、氮氧化物、氮氧碳 2物，或金屬矽化物等。在第丨、第2半透光膜之加工中必 需進行蝕刻選擇性之情況下，宜將其中一者設為含鉻化合 144683.doc -16· 201035673 物、將另一者設為含金屬矽化物化合物。在無需姓刻選擇 性之加工步驟之情況下，第1、第2半透光膜可使用互異之 鉻化合物’或可使用相異之金屬矽化物。作為金屬石夕化 物，宜使用MoSix、MoSi之氧化物、氮化物、碳化物、氮 氧化物、氮氧碳化物等。再者，宜積層第2半透光膜、第丄 半透光膜及遮光膜而構成，並根據加工步驟之必要性，將 相互具蝕刻選擇性之素材毗連而積層。 Ο ❹ 作為第1半透光膜14及第2半透光膜15之材料，選擇相對 於i線〜g線範圍内之波長之透射率波長依存性大致相等 者。較佳為相對於i線〜g線範圍内之波長的上述透射率波 長依存性特性之斜率之差異為5%/1〇〇nm以内。 再者，宜選擇各自具有以下透射率波長特性之膜素材： 第1半透光膜、第2半透光膜及積層膜相對於將i線、h線及 g線以1 : 1 : 1之比例混合之光源之透射率與相對於i線、匕 線或g線之透射率之間的各自之透射率差為3%以内。 例如，在金屬化合物與金屬矽化物之間，為使具有大致 相等之相對於i線〜g線範圍内之波長之透射率波長依存 性，有必要適宜調整金屬化合物及/或金屬_化物之各自 之組成。例如，在鉻化合物與㈣化物之間，為使具有大 致相等之相對於i線〜g線範圍内之波長之透射率波長依存 性’可以配合鉬矽化物之相對於i線〜g線範圍内之波長之 透射率波長依存性的方式，設定添加祕化合物之元素、 例如氧氣或氮氣之量。反之亦可。例如利用滅鍍成膜之情 況下’將鉻作為靶材，在&等之載體氣體中添加氧氣或氮 144683.doc 201035673 氣作為濺鍍氣體，且進一步調整其流量，藉此可形成期望 之鉻氧化物、氮化物、氮氧化物膜。ϋ由在濺鍍氣體中添 加c〇2等之碳化合物，亦可形成碳化物。 將鉬與矽作為濺鍍靶材，或使用翻矽化物之濺鍍靶材， 凋整氮氣或氧氣作為濺鍍氣體而使用，藉此，亦可控制 MoSi化合物之半透光膜之透射率波長依存性。 又，在選擇第1半透光膜14及第2半透光膜15之材料之情 况時’在該等材料中，±考慮製造過程中之難姓刻性等。 又，作為構成遮檔曝光光之遮光膜12之材料，可舉例如 鉻等之金屬、矽、金屬氧化物、鉬矽化物之金屬矽化物 等。又，作為構成反射防止膜13之材料，可舉例如路之氧 化物、氮化物、碳化物、氟化物等。 、，其次，就本發明之製造多調式光罩之—方法進行說明。 首先’就圖2(e)所示之結構之製造進行說明。圖3⑷〜(k)係 用於說明製造圖2(e)之膜結構之多調式光罩之方法之圖。 再者K 2(e)所不之結構之製造方法，不僅限於該等之方 法。在此處’冑第1半透光膜Μ及第2半透光膜15之材料設 為具有各個大致相等之相對於丨線〜g線範圍内之波長之透 射率波長依存性的絡化合物與㈣化物。X，將遮光紅 設為鉻，將反射防止膜13之材料設為氧化絡。 又，在以下之說明中，構成抗姓層之抗姓材料、用於勒 ^時之㈣劑、用於顯像時之顯像液等皆適宜選擇可在失 前之光微影及蝕刻步驟φ蚀田土 v ,, ，驟中使用者。例如，關於蝕刻劑係相 據構成被㈣膜之㈣而適宜選擇，且關於顯像液係根韻 144683.doc 201035673 所使用之抗蝕材料而適宜選擇。 膜ίΓ/二之方法中，係準備在透明基板上形成有遮光 、之先罩基底’在上述光罩基底上形成第m韻圖宰，將 ί述第1抗姑圖案作為遮罩，將上述遮光膜藉㈣刻而進 订圖案加工’纟包含經上述圖案加工之遮光膜之基板面上 形成第2半透光膜’在形成有上述第2半透光膜之基板面上 形成第2抗_案，將上述第2抗㈣案作為料，將上述The structure shown in Fig. 2 (4) is such that the second semi-transmissive film 15 'the light-shielding film 12, the anti-reflection film 13, and the first are formed on the transparent substrate u in order! The semi-transmissive film 14 constitutes the light-shielding portion A, and the second semi-transparent wire is formed on the transparent substrate η! 5, the η semi-transmissive portion Β, and the first semi-transmissive film 14 is formed on the transparent substrate 11 as the second semi-transmissive portion (: Further, the translucent portion 露出 by exposing the transparent substrate 丨丨The structure shown in FIG. 2(e) is such that the light shielding film 12, the anti-reflection film 13, the second semi-transmissive film 15, and the semi-transparent light are sequentially formed on the transparent substrate U. The film 14 is configured to cover, and the second semi-transmissive film 15 and the first semi-transmissive film 14 are sequentially formed on the transparent substrate, and the third semi-transmissive portion B is formed on the transparent substrate U. The second semi-transmissive portion (4) is formed as the second semi-transmissive portion C, and the first semi-transmissive film 14 144683.doc •15-201035673 is formed as the first semi-transmissive portion D on the transparent substrate. The light-transmitting portion E is formed by exposing the transparent substrate. The structure shown in Fig. 2(f) is as follows: the second semi-transparent film is sequentially formed on the transparent base; 5, the light-shielding film 12. The anti-reflection film 13 and the semi-transmissive medium are used as the light-shielding portion A, and the second semi-transmissive film 15 and the first semi-transmissive film M are sequentially formed on the transparent substrate w. 3 semi-transparent, and In the transparent substrate 11JL, the second semi-transmissive film (4) is formed as the first light transmitting portion C, and the first semi-transmissive film (4) is formed on the transparent substrate 11 as the first semi-transmissive light. PD. The structure is formed by exposing a transparent substrate. As shown in FIGS. 2(e) and (f), the first semi-transmissive portion, the second semi-transmissive portion, and the third portion each having a different film structure are included. The semi-transmissive portion is formed by separately forming the first and second semi-transmissive films on the transparent substrate, and further forming the first and second semi-transmissive films on the transparent substrate. The structure is used for the example of the pattern display laminated structure, and is not limited thereto. Moreover, the pattern shown in the figure does not reflect the actual component pattern. Furthermore, in the present specification, for the first and second aspects. The third semi-transmissive portion, the first or second semi-transmissive film, may be replaced as needed. Further, an additional semi-transmissive film may be used to form more semi-transmissive portions. The substrate U may be, for example, a glass substrate, etc. The material of the first semi-transmissive film or the second semi-transmissive film 14 and 15 through which the exposure pupil is passed may be made of chromium. a compound, a nitride, a carbide, an oxynitride, a oxynitride, or a metal halide. When etching selectivity is required in the processing of the second and second semi-transmissive films, one of them should be The composition is a chromium-containing compound 144683.doc -16·201035673, and the other is a metal-containing telluride compound. The first and second semi-transparent films can be used without a process step of selective etching. It is possible to use a different chromium compound or to use a different metal halide. As the metal austenite, it is preferable to use an oxide, a nitride, a carbide, a nitrogen oxide, a nitrogen oxide, or the like of MoSix or MoSi. The second semi-transmissive film, the second semi-transparent film, and the light-shielding film are formed, and the materials having the etching selectivity are adjacent to each other and laminated according to the necessity of the processing step. Ο ❹ The materials of the first semi-transmissive film 14 and the second semi-transmissive film 15 are selected such that the wavelength dependence of the wavelengths in the range from the i-line to the g-line is substantially equal. Preferably, the difference in the slope of the transmittance wavelength dependence characteristic with respect to the wavelength in the range of the i-line to the g-line is 5%/1 〇〇 nm or less. Further, it is preferable to select film materials each having the following transmittance wavelength characteristics: the first semi-transmissive film, the second semi-transmissive film, and the laminated film are 1 : 1 : 1 with respect to the i-line, the h-line, and the g-line. The difference in transmittance between the transmittance of the proportionally mixed light source and the transmittance with respect to the i-line, the ridge line or the g-line is within 3%. For example, between the metal compound and the metal halide, it is necessary to appropriately adjust the respective metal compounds and/or metal-based compounds in order to have wavelength dependence of transmittance which is substantially equal to the wavelength in the range of the i-line to the g-line. The composition. For example, between the chromium compound and the (tetra) compound, the wavelength dependence of the transmittance of the wavelengths in the range of substantially equal to the i-line to the g-line can be matched with the range of the molybdenum telluride relative to the i-line to the g-line. The wavelength of the wavelength is dependent on the wavelength dependence, and the amount of the element to which the secret compound is added, such as oxygen or nitrogen, is set. The opposite is also possible. For example, when chromium plating is used as a target, oxygen or nitrogen 144683.doc 201035673 gas is added as a sputtering gas to a carrier gas such as & and the flow rate is further adjusted, thereby forming a desired Chromium oxide, nitride, oxynitride film. ϋ A carbide can be formed by adding a carbon compound such as c 〇 2 to the sputtering gas. Molybdenum and niobium are used as sputtering targets, or sputtering targets of ruthenium compounds are used, and nitrogen or oxygen is used as a sputtering gas, thereby controlling the transmittance wavelength of the semi-transmissive film of the MoSi compound. Dependence. Further, when the materials of the first semi-transmissive film 14 and the second semi-transmissive film 15 are selected, 'in these materials, ± is considered to be difficult to be formed in the manufacturing process. Further, as a material of the light-shielding film 12 constituting the occlusion exposure light, for example, a metal such as chromium, ruthenium, a metal oxide, or a metal ruthenium compound of molybdenum telluride may be mentioned. Further, examples of the material constituting the anti-reflection film 13 include oxides, nitrides, carbides, fluorides, and the like of the road. Next, the method of manufacturing the multi-tone mask of the present invention will be described. First, the manufacture of the structure shown in Fig. 2(e) will be described. 3(4) to (k) are views for explaining a method of manufacturing the multi-mode mask of the film structure of Fig. 2(e). Further, the manufacturing method of the structure not limited by K 2 (e) is not limited to the methods described above. Here, the material of the first semi-transparent film Μ and the second semi-transmissive film 15 is a complex compound having wavelengths of transmittance which are substantially equal to the wavelengths in the range of the 丨 line to the g line. (4) Compound. X, the light-shielding red is set to chrome, and the material of the anti-reflection film 13 is made into an oxidized network. In addition, in the following description, the anti-surname material constituting the anti-surname layer, the (four) agent for the photo-time, the developing liquid for the development, and the like are all suitable for selecting the light lithography and the etching step before the loss. φ etch the soil v,,, and the user. For example, the etchant system is suitably selected in accordance with (4) of the (4) film, and is suitably selected in relation to the resist material used in the image liquid rhyme 144683.doc 201035673. In the method of the film, the first substrate is formed on the transparent substrate, and the first mask is formed on the mask substrate, and the first anti-gu pattern is used as a mask. The light-shielding film is formed by the (four) engraving pattern processing, and the second semi-transmissive film is formed on the substrate surface including the light-shielding film processed by the pattern pattern, and the second anti-reflection film is formed on the substrate surface on which the second semi-transmissive film is formed. _, the above second anti-(four) case is taken as the material, the above

第2半透光膜藉由_進行圖案加工，在包含經上述圖案 加工之第2半透光膜之基板面上形成第^透光膜，在形成 有上述第1半透光膜之基板面上形成第3抗蝕圖案，將上述 第3抗#®案作為遮罩，將上㈣丨半透光膜藉由㈣進行 圖案加工。 例如’如圖3(a)所示’準備在透明基板11上依序形成遮 光膜12及反射防止膜13之光罩基底，在該光罩基底上形成 抗蝕層16,如圖3(b)所示，以形成第3半透光部0、第二半 透光邛C、第1半透光部D及透光部£的方式將抗蝕層16曝 光顯像而开〉成開口部。其次，如圖3(c)所示，將該抗蝕 圖案作為遮罩，蝕刻露出之遮光膜12及反射防止膜13，從 而除去抗姓層16。 其次’如圖3(d)所示，在整面形成第2半透光膜15，並 在該整面將抗蝕膜塗布、微影、顯像，而如圖3(e)所示， 在遮光部A、第3半透光部B及第2半透光部c之區域形成抗 触層16 ’且如圖3(f)所示，將該抗蝕圖案作為遮罩，蝕刻 路出之第2半透光膜15，且如圖3(g)所示’除去抗蝕層16。 144683.doc -19· 201035673 其次，如圖3(h)所示，在整面形成第丨半透光膜14，並 在該整面將抗蝕膜塗布、微影、顯像，而如圖3(1)所示， 在遮光部A、第3半透光部b及第丨半透光部〇之區域形成抗 蝕層16，且如圖3(j)所示，將該抗蝕圖案作為遮罩，蝕刻 露出之第1半透光膜14,且如圖3(k)所示，除去抗蝕層16。 如此一來可製作如圖2(e)所示之結構。 其次，就圖2(f)所示之結構之製造進行說明。圖4(叻〜(幻 係用於說明製造圖2 (f)之膜結構之多調式光罩之方法之 圖。再者，® 2(f)所示之結構之製造方法並不限於該等之 方法。在此處，將第1半透光膜14設為4鉻化合物， 將第2半透光膜15之材料設為鉬矽化物（M 〇 s丨）。該等之材 料具有大致彼此相同之相對於丨線〜g線範圍内之波長之透 射率波長依存性。又，將遮錢12設為鉻，將反射防止膜 13之材料設為絡化合物。 又在以下之說明中，構成抗钮層之抗触材料、用於飯 刻時之㈣劑、用於顯料之顯像液㈣適宜選擇可在先 前之光微影及㈣步财使用者。例如，關於_劑係根 據構成被蝕刻膜之材料而適宜選擇，關於顯像液係根據所 使用之抗敍材料而適宜選擇。 在圖4所示之方法中，係準備在透明基板上依序積層第 半透光膜及遮光膜之光罩基底’在上述光罩基底上形成筹 m㈣案，將上述第圖案作為遮罩，將上述遮光塘 藉由㈣進行圖案加工，在包含經上述圖案加工之遮光膜 之基板面上形成第2抗_帛，將上述第2抗韻圖案作為遮 144683.doc •20- 201035673 罩’將上述第2半透光膜藉由蝕刻進行圖案加工，在包含 輕上述圖案加工之第2半透光膜之基板面上形成第1半透光 膜’在形成上述第1半透光膜之基板面上形成第3抗蝕圖 案，將上述第3抗蝕圖案作為遮罩，將上述第丨半透光膜藉 由蝕刻進行圖案加工。 例如’如圖4(a)所示，準備在透明基板U上依序形成第2 半透光膜15、遮光膜丨2及反射防止膜13之光罩基底，在該 ❹ 光罩基底上形成抗蝕層I6,且如圖4(b)所示，以形成第3半 透光部B、第2半透光部C、第丨半透光部〇及透光部£的方 式，將抗蝕層16曝光、顯像而形成開口部。其次，如圖 4(c)所示，將該抗蝕圖案作為遮罩，蝕刻露出之遮光膜12 及反射防止膜13，且如圖4(d)所示，除去抗蝕層16。此 時，由於第2半透光膜15係以鉬矽化物而構成，故無法以 遮光膜12及反射防止膜13之抗蝕劑予以蝕刻。 其次’藉由在整面將抗蝕膜塗布、微影、顯像，而如圖 O 4(e)所示，在第2半透光膜15之遮光部A、第3半透光部B及 第2半透光部C之區域形成抗蝕層16，且如圖4以)所示，將 該抗蝕圖案作為遮罩，蝕刻露出之第2半透光膜丨5，且如 圖4(g)所示，除去抗蝕層丨石。 其次，如圖4(h)所示，在萃而拟士铂 仕正面形成第i半透光膜14，藉 由在該整面將抗钮膜塗布、微影、顯像，而如圖4⑴所 示，在第i半透光膜14之遮光部八、第3半透光部b及第綷 透光部D之區域形成抗蝕層16， 立如圖4(J)所示，將該抗蝕 圖案作為遮罩，蝕刻露出之第丨丰、类本 心矛i牛透先膜14，且如圖4(k)所 144683.doc 21 201035673 示，除去抗蝕層16。如此一來在第1半透光部D及第2半透 光PC之區域’可製作分別形成第}半透光膜μ及第2半透 光膜15之如圖2(f)所示之結構。 本發明之光罩不僅限於上述製造方法。例如，具圖2(b) 之結構之光罩之製造方法可為以下之步驟。即，本發明亦 包含如下之多調式光罩之製造方法，其具備以下步驟：準 備在透明基板上形成有第&透光膜、第2半透光膜、及遮 光膜之光罩基底；在上述光罩基底上形成第】抗蝕圖案； 將上述第1抗触圖案作為遮罩，將上述遮光膜藉由㈣進 :丁圖案加工’纟包含經上述加工之遮光膜之基板面上形成 第2抗蝕圖案，將上述第2抗蝕圖案作為遮罩，將上述第1 或第2半透光膜藉由钱刻進行圖案加卫；纟包含經上述圖 案加工之第1或第2半透光膜之基板面上形成第3抗蝕圖 案；及將上述第3抗蝕圖案作為遮罩，將上述第丨或第二半 透光膜藉由蝕刻進行圖案加工…上述第ι半透光膜及 上述第2半透光膜係分別以相對於i線〜g線範圍内之波長之 透射率波長依存性大致相等的材料構成。 此處，針對為明確闡述發明效果所進行之實施例進行說 明。 (貫施例） 以圖4所示之方法，製造出具有圖2(f)所示之膜結構之多 調式光罩，即，㈣結構具備以第1半透錢14與第2半透 光旗15之積層膜構成之第3半透光❹、以第2半透光膜^ 構成之第2半透光部C、及以第1半透光膜U構成之釣半透 144683.doc -22- 201035673 光部此時，作為第丨半透光膜14之材料係使用氮氧化 鉻，該氮氧化鉻係經組成調整為具有與第2半透光膜15大 致相等之相對於i線〜g線範圍内之波長之透射率波長依存 性者，而作為第2半透光膜15之材料係使用鉬矽化物。 在具有如此之膜結構之多調式光罩中，調查第3半透光 部B、第2半透光部C及第！半透光部〇之丨線〜g線之波長區 域之透射率後’得到如圖1 (a)及下述表1所示之結果。再 者’作為光源係使用將i線、h線及g線以1 : 1 : 1之比例混 合之光源（混合光源：Mix)、與i線（波長365 nm)、h線（波 長405 nm)、及g線（波長436 nm)之光源。又，透射率係藉 由透射率測定機而測定。 HT-B 積層膜 HT-C 第2HT膜 HT-D 第1HT膜 365(i 線） 23.6 37.5 62.8 405(h 線） 26.0 39.9 65.2 436(g 線） 27.8 41.6 66.7 Mix(l：l：l) 25.8 39.7 64.9 ~~~ 相對i線 2.2 2.1 2.1 相對h線 -0.2 -0.2 -0.3 ~ 相對g線 -2.0 -1.9 -1.8The second semi-transmissive film is patterned by _, and a second transparent film is formed on the surface of the substrate including the second semi-transmissive film processed by the pattern, and the substrate surface on which the first semi-transmissive film is formed is formed. A third resist pattern is formed thereon, and the third anti-#® case is used as a mask, and the upper (four) 丨 semi-transmissive film is patterned by (4). For example, as shown in FIG. 3(a), a reticle substrate on which the light shielding film 12 and the anti-reflection film 13 are sequentially formed on the transparent substrate 11 is prepared, and a resist layer 16 is formed on the reticle substrate, as shown in FIG. 3(b). As shown in the figure, the resist layer 16 is exposed and developed to form the opening portion so as to form the third semi-transmissive portion 0, the second semi-transmissive 邛C, the first semi-transmissive portion D, and the light-transmitting portion £. . Next, as shown in Fig. 3(c), the resist pattern is used as a mask, and the exposed light-shielding film 12 and anti-reflection film 13 are etched to remove the anti-surname layer 16. Next, as shown in FIG. 3(d), the second semi-transmissive film 15 is formed on the entire surface, and the resist film is applied, lithographically, and developed on the entire surface, as shown in FIG. 3(e). The anti-contact layer 16 ′ is formed in a region of the light shielding portion A, the third semi-transmissive portion B, and the second semi-transmissive portion c, and as shown in FIG. 3( f ), the resist pattern is used as a mask, and etching is performed. The second semi-transmissive film 15 is removed from the resist layer 16 as shown in Fig. 3(g). 144683.doc -19· 201035673 Next, as shown in FIG. 3(h), the second semi-transmissive film 14 is formed on the entire surface, and the resist film is coated, lithographically, and imaged on the entire surface, as shown in FIG. 3 (1), a resist layer 16 is formed in a region of the light shielding portion A, the third semi-transmissive portion b, and the second semi-transmissive portion ,, and the resist pattern is formed as shown in FIG. 3(j) As the mask, the exposed first semi-transmissive film 14 is etched, and as shown in FIG. 3(k), the resist layer 16 is removed. In this way, the structure shown in Fig. 2(e) can be produced. Next, the manufacture of the structure shown in Fig. 2(f) will be described. Fig. 4 (叻 ( (the phantom system is used to illustrate the method of manufacturing the multi-mode mask of the film structure of Fig. 2 (f). Furthermore, the manufacturing method of the structure shown by the ® 2 (f) is not limited to these Here, the first semi-transmissive film 14 is made of a 4 chromium compound, and the material of the second semi-transmissive film 15 is made of a molybdenum telluride (M 〇s丨). The transmittance is dependent on the wavelength dependence of the wavelength in the range of the 丨 line to the g line. Further, the money is made of chromium, and the material of the antireflection film 13 is a complex compound. The anti-touch material of the button layer, the (4) agent used for rice cooking, the imaging liquid for the material (4) are suitable for the user in the previous photo lithography and (4) step money. For example, regarding the composition of the agent The material of the film to be etched is suitably selected, and the developer liquid is suitably selected according to the anti-synthesis material used. In the method shown in FIG. 4, the semi-transparent film and the light shielding are sequentially laminated on the transparent substrate. a film mask base 'forms m (4) on the above-mentioned mask substrate, and the above pattern is used as a mask, The shading pond is patterned by (4), and a second anti-帛 is formed on a surface of the substrate including the light-shielding film processed by the pattern, and the second anti-rhythm pattern is used as a cover 144683.doc • 20- 201035673 The second semi-transmissive film is patterned by etching, and a first semi-transmissive film is formed on the surface of the substrate including the second semi-transmissive film which is lightly patterned, and the substrate surface on which the first semi-transmissive film is formed is formed. A third resist pattern is formed thereon, the third resist pattern is used as a mask, and the second semi-transmissive film is patterned by etching. For example, as shown in FIG. 4(a), the transparent substrate U is prepared. A mask base of the second semi-transmissive film 15, the light-shielding film 2 and the anti-reflection film 13 is sequentially formed, and a resist layer I6 is formed on the mask substrate, and as shown in FIG. 4(b), The third semi-transmissive portion B, the second semi-transmissive portion C, the second semi-transmissive portion 〇, and the light-transmitting portion are formed, and the resist layer 16 is exposed and developed to form an opening. Secondly, as shown in the figure As shown in FIG. 4(c), the resist pattern is used as a mask, and the exposed light-shielding film 12 and the anti-reflection film 13 are etched, as shown in FIG. 4(d). The resist layer 16 is removed. At this time, since the second semi-transmissive film 15 is made of molybdenum telluride, it cannot be etched by the resist of the light-shielding film 12 and the anti-reflection film 13. Secondly, by the entire surface Coating, lithography, and development of the resist film, as shown in FIG. 4 (e), the light shielding portion A, the third semi-transmissive portion B, and the second semi-transmissive portion of the second semi-transmissive film 15 The resist layer 16 is formed in the region of C, and as shown in FIG. 4, the resist pattern is used as a mask, and the exposed second semi-transmissive film stack 5 is etched, and as shown in FIG. 4(g), The resist layer vermiculite. Next, as shown in FIG. 4(h), the ith semi-transmissive film 14 is formed on the front side of the extract, and the anti-button film is coated, lithographically and visually displayed on the entire surface. As shown in Fig. 4 (1), a resist layer 16 is formed in a region of the light-shielding portion VIII, the third semi-transmissive portion b, and the third light-transmitting portion D of the ith semi-transmissive film 14, as shown in Fig. 4 (J). As shown in the figure, the resist pattern is used as a mask to etch the exposed 丨 、 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , 16. Thus, in the region of the first semi-transmissive portion D and the second semi-transmissive PC, the second semi-transmissive film μ and the second semi-transmissive film 15 can be formed as shown in FIG. 2(f). structure. The photomask of the present invention is not limited to the above manufacturing method. For example, the manufacturing method of the photomask having the structure of Fig. 2(b) can be the following steps. That is, the present invention also includes a method of manufacturing a multi-tone mask comprising the steps of: preparing a photomask substrate having a light transmissive film, a second semi-transmissive film, and a light shielding film formed on a transparent substrate; Forming a first resist pattern on the mask base; using the first anti-contact pattern as a mask, and forming the light-shielding film by a (four) process: a process of forming a substrate comprising the light-shielding film processed by the processing The second resist pattern has the second resist pattern as a mask, and the first or second semi-transmissive film is patterned by money etching; and the first or second half is processed by the pattern Forming a third resist pattern on the surface of the transparent film; and using the third resist pattern as a mask, and patterning the second or second semi-transmissive film by etching... The film and the second semi-transmissive film are each made of a material having substantially the same wavelength dependence on the transmittance of the wavelength in the range of the i-line to the g-line. Here, an embodiment for clearly explaining the effects of the invention will be described. (Example) A multi-mode mask having the film structure shown in Fig. 2 (f) is produced by the method shown in Fig. 4, that is, the (four) structure is provided with the first semi-transparent 14 and the second semi-transparent. a third semi-transparent 构成 formed by the laminated film of the flag 15, a second semi-transmissive portion C composed of the second semi-transmissive film, and a semi-transparent film U composed of the first semi-transmissive film U 144683.doc - 22-201035673 Light portion At this time, as the material of the second semi-transmissive film 14, chromium oxynitride is used, and the chromium oxynitride is adjusted in composition to have substantially the same level as the second semi-transmissive film 15 with respect to the i-line. The transmittance of the wavelength in the g line range is wavelength dependent, and the material of the second semi-transmissive film 15 is molybdenum telluride. In the multi-tone mask having such a film structure, the third semi-transmissive portion B, the second semi-transmissive portion C, and the first are investigated! The results of the transmittance in the wavelength region of the 半 line to the g line of the semi-transmissive portion ’ are obtained as shown in Fig. 1 (a) and Table 1 below. In addition, as the light source, a light source (mixed light source: Mix) in which the i-line, the h-line, and the g-line are mixed at a ratio of 1:1:1, and an i-line (wavelength 365 nm) and an h-line (wavelength 405 nm) are used. And the g-line (wavelength 436 nm) source. Further, the transmittance was measured by a transmittance measuring machine. HT-B laminated film HT-C 2HT film HT-D 1HT film 365 (i line) 23.6 37.5 62.8 405 (h line) 26.0 39.9 65.2 436 (g line) 27.8 41.6 66.7 Mix(l:l:l) 25.8 39.7 64.9 ~~~ Relative i line 2.2 2.1 2.1 Relative h line -0.2 -0.2 -0.3 ~ Relative g line -2.0 -1.9 -1.8

從表1可知，i線之透射率對混合光源（Mix)之透射率之差 在第3半透光部（HT(Half Tone))B為2.2%，在第2半透光部 (HT)C為2.1%，在第1半透光部（HT)D為2.1%，而在第3半 144683.doc -23- 201035673 透光部（ΗΤ)Β、第2半透光部（HT)C、及第1半透光部（ht)d 之間僅偏差0.1%。又’ h線之透射率對混合光源（Mix)之透 射率之差在第3半透光部（HT)B為-0.2%，在第2半透光部 (HT)C為-0.2%，在第1半透光部（HT)D為-0.3%，而在第3半 透光部（HT)B、第2半透光部（HT)C '及第1半透光部（ht)d 之間僅偏差0.1 %。又，g線之透射率對混合光源（Mix)之透 射率之差在第3半透光部（HT)B為-2.0%，在第2半透光部 (HT)C為_1_9%，在第1半透光部（ht)D為-1.8%，而在第3半 透光部（HT)B、第2半透光部（HT)C、及第1半透光部（HT)D 之間僅偏差0.2%。 如此，在實施例之多調式光罩中，相對於將丨線、h線及 g線以1 : 1 : 1之比例混合之光源之透射率，與相對於i 線、h線或g線之透射率《間之各自之透射率差為心以 内’且在第3半透光部B、第2半透光部c、及第丄半透光部 D之間之變動非常小。即對應用於大型遮罩曝光機之波長 範圍之半透光膜之波長依存性無大幅變化，而相對較為平 穩。因此’實施例之多調式光罩容易f握在第 膜、第2半透錢及積層膜分料行圖⑽印時之特定之 :長下的抗触膜之殘膜值與曝光量等之間之關聯關係，且 曰 了<将疋之波長的抗蝕膜之殘膜值與曝 光量之間之關聯關係。即，益^ ' …、响用於遮罩使用時之曝光機 之光源之分光特性為何，形成 膜值均較少產生變動。 又，如從表1可知，第1半透光膜之i線〜g線中之透射率 \446S3.doc 201035673 波長依存性之斜率為5 77%/1〇〇 nrn，第2半透光膜之上述 斜率為5.49%/1〇〇 nm。此處之透射率斜率差為〇·28%，非 常小。即’該等2個膜之波長依存性大致相等。再者，積 層膜之斜率為5.92% /100 nm，其與第1、第2半透光膜之透 射率波長依存性之斜率之差為0.43%。 ΟAs can be seen from Table 1, the difference in transmittance between the transmittance of the i-line and the mixed light source (Mix) is 2.2% in the third semi-transmissive portion (HT (Half Tone)) B, and is in the second semi-transmissive portion (HT). C is 2.1%, and the first semi-transmissive portion (HT) D is 2.1%, and in the third half 144683.doc -23- 201035673, the light transmitting portion (ΗΤ) Β, the second semi-light transmitting portion (HT) C There is only a deviation of 0.1% between the first semi-transmissive portion (ht)d. Further, the difference between the transmittance of the h-line and the transmittance of the mixed light source (Mix) is -0.2% in the third semi-transmissive portion (HT)B, and -0.2% in the second semi-transmissive portion (HT)C. The first semi-transmissive portion (HT)D is -0.3%, and the third semi-transmissive portion (HT)B, the second semi-transmissive portion (HT)C', and the first semi-transmissive portion (ht) There is only a deviation of 0.1% between d. Further, the difference in transmittance between the transmittance of the g line and the mixed light source (Mix) is -2.0% in the third semi-transmissive portion (HT)B, and is _1_9% in the second semi-transmissive portion (HT)C. The first semi-transmissive portion (ht) D is -1.8%, and the third semi-transmissive portion (HT) B, the second semi-transmissive portion (HT) C, and the first semi-transmissive portion (HT) There is only a deviation of 0.2% between D. Thus, in the multi-mode reticle of the embodiment, the transmittance of the light source mixed with the 丨 line, the h line, and the g line at a ratio of 1:1:1 is relative to the i line, the h line, or the g line. The transmittance "the difference in transmittance between the two is within the center" and the variation between the third semi-transmissive portion B, the second semi-transmissive portion c, and the second semi-transmissive portion D is extremely small. That is, the wavelength dependence of the semi-transparent film corresponding to the wavelength range of the large-mask exposure machine does not largely change, and is relatively stable. Therefore, the multi-mode mask of the embodiment is easy to be held in the first film, the second semi-transparent film, and the laminated film (10) printing: the residual film value and the exposure amount of the anti-touch film. The relationship between the two is related to the relationship between the residual film value of the resist film and the exposure amount. That is, the spectral characteristics of the light source used for the exposure machine when the mask is used are small, and the film values are less likely to fluctuate. Further, as can be seen from Table 1, the transmittance in the i-th to g-line of the first semi-transmissive film is \446S3.doc 201035673 The slope of the wavelength dependency is 5 77% / 1 〇〇 nrn, the second semi-transmissive film The above slope is 5.49% / 1 〇〇 nm. Here, the transmittance slope difference is 〇·28%, which is very small. That is, the wavelength dependence of the two films is substantially equal. Further, the slope of the laminated film was 5.92% / 100 nm, and the difference between the slopes of the transmittance dependence of the transmittance of the first and second semi-transmissive films was 0.43%. Ο

由於選擇如此之第i、第2半透光膜，故不受遮罩使用時 之曝光機之光源之分光特性之影響，而可將形成於被轉印 物體上之抗蝕殘膜之階差控制為大致一定。 (比較例） 以圖4所示之方法，製造出具有圖2(f)所示之膜結構之該 多調式光罩，即，該膜結構具備以第】半透光膜14與第2半 透光膜15之積層膜構成之第3半透光部B;以第2半透光膜 15構成之第2半透光部C ;及以第丨半透光膜14構成之第1半 透光部D。此時’作為第丨半透顧14之材料係使用氧化 鉻，作為第2半透光膜15之材料係使用鉬矽化物。 在具有如此之膜結構之多調式光罩中，將第3半透光部 B、第2半透光部C及第κ透光部化線〜g線之波長區域 之透射率進行與實施例同樣之調查後， ^ 可侍到如圖1(b)及 下述表2所示之結果。 144683.doc -25- 201035673 表2 HT-B 積層膜 HT-C 第2111膜 HT-D 第1HT膜 365(i 線） 23.3 37.5 62.2 ~~ 405(h 線） ---*—----- 27.0 39.9 67.7 436(g 線） 29.8 41.6 71.6 Mix(l：i：i) 26.7 39.7 67.1 — 相對i線 3.4 2.1 5.0 相對h線 -0.3 -0.2 -0.5 相對g線 -3.1 -1.9 -4.4 從表2可知，^線之透射率對混合光源之透射率之差 在第3半透光部B為3.4%，在第2半透光部c為21%，在第工 半透光部D為5.0%，在第3半透光部（HT)B、第2半透光部 (HT)C、及第1半透光部（HT)D之間偏差2.9%。又，h線之 透射率對混合光源（Mix)之透射率之差在第3半透光部 (HT)B為-0.3%，在第2半透光部（11丁)(：為_〇 2%，在第！半透 光部（HT)D為-0.5%，在第3半透光部（HT)B、第2半透光部 (HT)C、及第1半透光部（HT)D之間偏差〇 3%。又，g線之 透射率對混合光源（Mix)之透射率之差在第3半透光部 旧丁译為-3·1%，在第2半透光部（HT)C為-1.9°/。，在第i半透 光部（HT)D為-4.4%，在第3半透光部（HT)B、第2半透光部 (HT)C、及第1半透光部（ht)d之間偏差2 5〇/〇。 又，如表2所示，第！半透光膜之丨線〜§線中之透射率波 長依存性之斜率為18.5%/1〇〇 nm，第2半透光膜之上述斜 144683.doc -26- 201035673 率為5.77°/。/1〇〇 nm。其斜率之差為12.73%，較實施例相當 大。又，積層膜之斜率為13·2%/100 nm，與第1、第2半透 光膜之透射率波長依存性之斜率之差最大高達7.43 %。 如上所述，在比較例之多調式光罩中，發生相對於將i 線、h線及g線以1 : 1 : 1之比例混合之光源之透射率，與 相對於i線、h線或g線之透射率之間的各自之透射率差超 過3%的情況，且在第3半透光部（HT)B、第2半透光部 (HT)C、及第1半透光部（HT)D之間之變動較大。因此，卜 較例之多調式光罩難以掌握在第1半透光膜、第2半透光膜 及積層膜進行各自之圖案轉印時之特定之波長下的抗姓膜 之殘膜值與曝光量之間之關聯關係，且條件訂定亦複雜。 本發明不僅限於上述實施形態，可適宜變更而實施。 又’上述實施形態中之構件之個數、尺寸、及處理順序等 為一例，可在發揮本發明效果之範圍内，進行各種之變更 而實施。另外’可在不脫離本發明之目的之範圍内，進行 Q 適宜之變更而實施。 再者，半透光部相對於曝光光之波長之透射率變化 (即，半透光部之透射率波長依存性）除受所使用之半透光 膜之’^響外，亦受圖案之尺寸之影響。因為於例如在 μ ηι以下等微細之線寬之圖#巾，若使用長波長侧之曝光 光，會有較短波長之曝光光難以解像之趨勢。 在上述之情況下，可考慮亦配合因圖案線寬所引起之透 射率之波長依存性。即，由於起因於圖案線寬之透射率波 長依存1·生會與所使用之半透光膜之膜固有的透射率（膜透 144683.doc -27- 201035673 射率）之波長依存性重疊而產生，故可掌握作為兩者之合 計之波長依存性之趨勢。然後，以使每個半透光部之波長 依存性之趨勢㈣的方式，調整半透光部之膜材或膜厚即 可。依上述之基準使在各半透光部之上述之合計透射率 (亦稱為實效透射率）之波長依存性大致相等，藉此，可製 成再現性更佳且賦予優良之加工條件的多調式光罩。 【圖式簡單說明】 圖1(a)係鼻員示本發曰月之實施形態 < 多調 < 光罩的半透光 膜之透射率之波長依存性之圖，（b)係顯示先前之多調式光 罩的半透光膜之透射率之波長依存性之圖。 圖2(a)〜（f)係顯示本發明之實施形態之多調式光罩之構 造。 圖3(a)〜(k)係用於說明圖2(e)所示之多調式光罩之構造之 製造方法。 圖4⑷〜(k)係用於說明圖2(〇所示之多調式光罩之構造之 製造方法。 圖5係顯示多調式光罩之一部分之圖案。 圖6⑷、⑻係顯示遮光膜、半透光膜之圖案及與1對應 之光強度分佈。 【主要元件符號說明】 11 透明基板 12 遮光膜 13 反射防止膜 14 第1半透光膜 144683.doc -28- 201035673 15 第2半透光膜 16 抗餘層Since the ith and second semi-transparent films are selected, the step of the resist film formed on the object to be transferred can be prevented from being affected by the spectral characteristics of the light source of the exposure machine when the mask is used. The control is roughly constant. (Comparative Example) The multi-mode mask having the film structure shown in Fig. 2 (f) was produced by the method shown in Fig. 4, that is, the film structure was provided with the first semi-transmissive film 14 and the second half. a third semi-transmissive portion B composed of a laminated film of the light-transmissive film 15; a second semi-transmissive portion C composed of the second semi-transmissive film 15; and a first semi-transparent portion composed of the second semi-transmissive film 14 Light part D. At this time, chromium oxide is used as the material of the second semiconductor layer 14, and molybdenum telluride is used as the material of the second semi-transmissive film 15. In the multi-tone mask having such a film structure, the transmittances of the third semi-transmissive portion B, the second semi-transmissive portion C, and the gamma-transmissive portion line to the g-line are performed in the wavelength region. After the same investigation, ^ can serve the results shown in Figure 1 (b) and Table 2 below. 144683.doc -25- 201035673 Table 2 HT-B laminated film HT-C 2111 film HT-D 1HT film 365 (i-line) 23.3 37.5 62.2 ~~ 405 (h line) ---*----- - 27.0 39.9 67.7 436 (g line) 29.8 41.6 71.6 Mix(l:i:i) 26.7 39.7 67.1 — Relative i line 3.4 2.1 5.0 Relative h line -0.3 -0.2 -0.5 Relative g line -3.1 -1.9 -4.4 From the table 2, the difference between the transmittance of the line and the transmittance of the mixed light source is 3.4% in the third semi-transmissive portion B, 21% in the second semi-transmissive portion c, and 5.0 in the second semi-transmissive portion D. % differs by 2.9% between the third semi-transmissive portion (HT) B, the second semi-transmissive portion (HT) C, and the first semi-transmissive portion (HT) D. Further, the difference in transmittance between the transmittance of the h-line and the mixed light source (Mix) is -0.3% in the third semi-transmissive portion (HT)B, and in the second semi-transmissive portion (11) (: _〇) 2%, in the first semi-transmissive portion (HT) D is -0.5%, in the third semi-transmissive portion (HT) B, the second semi-transmissive portion (HT) C, and the first semi-transmissive portion ( The deviation between HT)D is 〇3%. In addition, the difference between the transmittance of the g-line and the transmittance of the mixed light source (Mix) is translated to -3.1% in the third semi-transmission portion. The light portion (HT) C is -1.9 ° /., the ith semi-transmissive portion (HT) D is -4.4%, and the third semi-transmissive portion (HT) B and the second semi-transmissive portion (HT) The deviation between C and the first semi-transmissive portion (ht)d is 2 5 〇/〇. Further, as shown in Table 2, the wavelength dependence of the transmittance in the 〜 line of the semi-transmissive film The slope is 18.5%/1〇〇nm, and the above-mentioned oblique 144683.doc -26-201035673 rate of the second semi-transmissive film is 5.77°/./1〇〇nm. The difference in slope is 12.73%, which is equivalent to the embodiment. Further, the slope of the laminated film is 13.2%/100 nm, and the difference between the slopes of the wavelength dependence of the transmittance of the first and second semi-transmissive films is as high as 7.43%. As described above, in the comparative example many In the reticle, the transmittance of the light source mixed with the i line, the h line, and the g line at a ratio of 1:1:1, and the transmittance with respect to the i line, the h line, or the g line When the difference in transmittance is more than 3%, the variation between the third semi-transmissive portion (HT) B, the second semi-transmissive portion (HT) C, and the first semi-transmissive portion (HT) D is higher. Therefore, it is difficult to grasp the residual film of the anti-surname film at a specific wavelength when the first semi-transparent film, the second semi-transmissive film, and the laminated film are subjected to pattern transfer of the first semi-transparent film, the second semi-transmissive film, and the laminated film. The relationship between the value and the exposure amount is complicated, and the condition is also complicated. The present invention is not limited to the above embodiment, and can be implemented as appropriate. Further, the number, size, processing order, and the like of the members in the above embodiment are For example, various modifications can be made without departing from the scope of the present invention. Further, it is possible to carry out the appropriate change of Q without departing from the object of the present invention. The change in transmittance of the wavelength of the exposure light (ie, the wavelength dependence of the transmittance of the semi-transmissive portion) The use of the semi-transparent film is also affected by the size of the pattern. For example, in the case of a thin line width such as μ ηι or less, if the exposure light on the long wavelength side is used, there will be a short The wavelength of the exposure light is difficult to resolve. In the above case, it is conceivable to match the wavelength dependence of the transmittance due to the line width of the pattern. That is, the transmittance due to the line width of the pattern depends on the wavelength. The wavelength dependence of the transmittance of the film of the semi-transmissive film used (the film transmittance of 144683.doc -27-201035673) is overlapped, so that the wavelength dependence of the total of the two can be grasped. . Then, the film thickness or film thickness of the semi-transmissive portion may be adjusted so as to have a tendency (4) of the wavelength dependence of each semi-transmissive portion. According to the above criteria, the wavelength dependence of the total transmittance (also referred to as effective transmittance) of each of the semi-transmissive portions is substantially equal, whereby reproducibility can be improved and excellent processing conditions can be imparted. Adjustable mask. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(a) shows the embodiment of the hairpin month<multiple adjustment<the wavelength dependence of the transmittance of the semi-transmissive film of the mask, and (b) shows The wavelength dependence of the transmittance of the semi-transmissive film of the previous multi-mode mask. Fig. 2 (a) to (f) show the construction of a multi-tone mask according to an embodiment of the present invention. 3(a) to (k) are views for explaining a method of manufacturing the structure of the multi-tone mask shown in Fig. 2(e). 4(4) to (k) are for explaining the manufacturing method of the structure of the multi-tone mask shown in Fig. 2. Fig. 5 is a view showing a pattern of a part of the multi-mode mask. Fig. 6 (4), (8) shows a light shielding film, and a half. The pattern of the light-transmissive film and the light intensity distribution corresponding to 1. [Main component symbol description] 11 Transparent substrate 12 Light-shielding film 13 Anti-reflection film 14 First semi-transparent film 144683.doc -28- 201035673 15 2nd semi-transparent Membrane 16 anti-layer

144683.doc -29144683.doc -29

Claims (1)

201035673 七、申請專利範園： 1· 一種多調式光罩，其係在透明基板上，形成各自具特定 之透射率之第i半透光膜及第2半透光膜，並分別施以特 • 定，圖案化’藉此形成包含透光部、及包括模結構互異 t第1半透光部及第2半透光部之至少2個半透光部之轉 印圖案而成者；其特徵在於： 上述第1半透光部之相對於i線〜g線範圍内之波長之透 ❹ 〜率波長依存性，與上述第2半透光部之相對於i線〜g線 乾圍内之波長之透射率波長依存性大致相等。 2.如請求们之多調式光罩，其係在透明基板上，形成遮 = 及各自具特疋之透射率之第1半透光膜及第2半透 立光膜，ϋ分別施以特定之圖案&，藉此形成包含遮光 部、透光部、及包括膜結構互異之第！半透光部及第2半 透光部之至少2個半透光部的轉印圖案而成者，其中， 上述第1半it光部之相對於i線〜§線範圍内之波長的膜透 ❹射率之波長依存性，與上述第2半透光部之相對於 線範圍内之波長的膜透射率之波長依存性大致相等。 3.如明求項1之多調式光罩，其係在透明基板上，形成遮 光膜、及各自具特定之透射率之第丨半透光膜及第2半透 ^膜、，並分別施以特定之圖案化，藉此形成包含遮光 。卜透光部、及包括膜結構互異之第i半透光部及第2半 透光=之至少2個半透光部之轉印圖案而成者；其中， '，、第1半透光部之相對於丨線〜g線範圍内之波長的實效 透射率之波長依存性，與上述第2半透光部之相對於丨線 144683.doc 201035673 〜g線範圍内之波長 等。 的實效透射率之波長依存性大致相 4. t請求項1至3中任-項之多調式光軍，其中上述第丨半 之相對於i線〜g線範圍内之波長之透射率波長依存 、與上4第2半透光部之相對於i線〜g線範圍内之 ;長之透射率波長依存性特性之斜率之差異為湖〇〇 nm以内。 5. 如請求項4之多調式光罩，其中上述至％個半透光部包 3在透明基板上形成有上述第i半透光膜之第！半透光 部，及在上述透明基板上形成有上述第2半透光膜之第2 半透光部。 6. 如請求項4之多調式光罩，其中上述至少2個半透光部包 含、在透明基板上形成有上述第！或第2半透光膜之第ι 半透光部，及在透明基板上積層而形成上述第1半透光 膜與上述第2半透光膜而成之第2半透光部。 7. 如請求項4之多調式鮮，其巾上㈣4透光部及上述 第2半透光部各自具有相對於將i線、h線及§線以1: i: i 之比例混合之光源之透射率與相對於丨線、城或§線之透 射率之間的各自之透射率差為3 %以内之透射率波長特 性0 8·如請求項4之多調式光罩，其中上述第i半透光膜及第2 半透光膜之一者為含鉻化合物，另一者為含鉬矽化物化 合物，以使上述第丨半透光膜及上述第2半透光膜之相對 於i線〜g線範圍内之波長之透射率波長依存性大致相等的 144683.doc 201035673 方式，調整上述含鉻化合物或含鉬矽化物化合物中的添 加元素之量。 ❹201035673 VII. Application for Patent Park: 1. A multi-mode mask, which is formed on a transparent substrate to form an ith semi-transparent film and a second semi-transparent film each having a specific transmittance, and respectively apply • patterned, thereby forming a transfer pattern including a light transmitting portion and at least two semi-transmissive portions including a first semi-transmissive portion and a second semi-transmissive portion of the mold structure; The wavelength dependence of the wavelength of the first semi-transmissive portion with respect to the wavelength in the range of the i-line to the g-line is the wavelength dependence of the second semi-transmissive portion with respect to the i-line to the g-line. The wavelength dependence of the wavelengths within the wavelength is approximately equal. 2. The multi-mode mask of the requester is mounted on a transparent substrate to form a first semi-transmissive film and a second semi-transparent light film having a specific transmittance and a specific transmissive film. The pattern & thereby forming a portion including the light-shielding portion, the light-transmitting portion, and the film structure: a transfer pattern of at least two semi-transmissive portions of the semi-transmissive portion and the second semi-transmissive portion, wherein the first semi-light-receiving portion has a wavelength with respect to a wavelength within a range of i-line to § line The wavelength dependence of the transmittance is substantially equal to the wavelength dependence of the film transmittance of the second semi-transmissive portion with respect to the wavelength in the line range. 3. The multi-modulation mask of claim 1, which is formed on a transparent substrate to form a light-shielding film and a second semi-transparent film and a second semi-transparent film each having a specific transmittance, and respectively It is patterned in a specific pattern, thereby forming a light-shielding. a light transmissive portion and a transfer pattern including at least two semi-transmissive portions having different film structures and at least two semi-transmissive portions of the second semi-transmissive light; wherein, ',, the first semi-transparent portion The wavelength dependence of the effective transmittance of the light portion with respect to the wavelength in the range of the 丨 line to the g line, and the wavelength of the second semi-light-transmitting portion with respect to the line 144683.doc 201035673 to g line. The wavelength dependence of the effective transmittance is substantially the same as that of the multi-tone ray of any one of the claims 1 to 3, wherein the transmittance of the wavelength of the first half of the wavelength relative to the wavelength of the i-line to the g-line is dependent. And the upper half of the second semi-transmissive portion with respect to the i-line to the g-line; the difference in the slope of the long-wavelength transmittance-dependent property is within the range of the lake 〇〇nm. 5. The multi-modulation reticle of claim 4, wherein the at least one semi-transmissive portion package 3 is formed on the transparent substrate with the ith semi-transparent film described above! The semi-transmissive portion and the second semi-transmissive portion on which the second semi-transmissive film is formed on the transparent substrate. 6. The multi-modulation mask of claim 4, wherein the at least two semi-transmissive portions comprise and are formed on the transparent substrate! Or a first semi-transmissive portion of the second semi-transmissive film and a second semi-transmissive portion formed by laminating the first semi-transmissive film and the second semi-transmissive film on the transparent substrate. 7. According to the multi-modulation of claim 4, the light-transmitting portion (4) 4 and the second semi-transmissive portion of the towel each have a light source mixed with a ratio of 1: i: i with respect to the i-line, the h-line, and the § line. Transmittance wavelength characteristic of the transmittance difference between the transmittance and the transmittance of the squall line, the city or the § line is less than 3%. The multi-modulation reticle of claim 4, wherein the above i One of the semi-transmissive film and the second semi-transmissive film is a chromium-containing compound, and the other is a molybdenum-containing telluride compound such that the first semi-transparent film and the second semi-transmissive film are opposite to each other The amount of the additive element in the chromium-containing compound or the molybdenum-containing telluride compound is adjusted by the method of 144683.doc 201035673 in which the wavelength dependence of the wavelength in the range of the line to the g line is substantially equal. ❹ 9. 一種多調式光罩之製造方法，其特徵在於具備以下之步 驟.準備在透明基板上依序積層有第2半透光膜及遮光 膜之光罩基底，·在上述光罩基底上形成第〗抗蝕圖案； 將上述第1抗蝕圖案作為遮罩，將上述遮光膜藉由蝕刻 而進灯圖案加工；在包含經上述圖案加工之遮光膜之基 板面上，形成第2抗蝕圖案；將上述第2抗蝕圖案作為遮 罩，將上述第2半透光膜藉由蝕刻而進行圖案加工，·在 包含經上述圖案加工之第2半透光膜之基板面上，形成 第1半透光膜；在形成上述第丨半透光膜之基板面上形 成第3抗姓圖案；及將上述第3抗触圖案作為遮罩，將上 述第1半透光膜藉由蚀刻而進行圖案加工；且 上述第1半透光膜及上述第2半透光膜係分別以相對於i 線〜g線範®内之波長㈣射率波長依存性大致相等之材 10. -種多調式光罩之製造方法，其特徵在於具備以下之步 驟：準備在透明基板上形成有遮光膜之光罩基底；在上 ::罩基底上形成第!抗蝕圖案；將上述第】抗蝕圖案作 =遮罩’將上述遮光膜藉由㈣而進行圖案加工；在包 2上^案加工之遮光膜之基板面上，形成第2半透 姓圖亲在形成上述第2半透光膜之基板面上，形成第2抗 將上述第2抗姓圖案作為遮罩，將上述第2半透 、猎由蚀刻而進行圖案加工；在包含經上述圖案加工 144683.doc 201035673 之第2半透光膜之基板面上， 有上述第1半透光獏之基板面 將上述第3抗蝕圖案作為遮罩 姓刻而進行圖案加工；且 形成第1半透光膜；在形成 上，形成第3抗蝕圖案；及 ，將上述第1半透光膜藉由 上述第1半透光膜及上述第2半透光膜係分別以相對於i 線〜§線範_之波長的透射率波長依存性大致 料構成。 ，何 11. -種多調式光罩之製造方法，其特徵在於具備以下之步 驟：準備在透明基板上形成有第！半透光膜、第2半透光 膜、及遮光膜之光罩基底；在上述光罩基底上形成第i 抗蚀圖案；將上述第1抗㈣案作為遮罩，將上述遮光 膜藉由蝕刻而進行圖案加工；在包含經上述加工之遮光 膜之基板面上，形成第2抗姓圖案；將上述第2抗蚀圖案 作為遮罩，將上述第1或2半透光膜藉由蝕刻而進行圖案 加工；在包含經上述圖案加工之第i或第2半透光膜之基 板面上，形成第3抗蝕圖案；及將上述第3抗蝕圖案作為 遮罩，將上述第1或第2半透光膜藉由蝕刻而進行圖案加 工；且 ’、 上述第1半透光膜及上述第2半透光膜係分別以相對於i 線g線範圍内之波長的透射率波長依存性大致相等之材 料構成。 12. —種圖案轉印方法，其特徵在於使用如請求項4之多調 式光罩，藉由照射1線〜g線之波長區域之照射光的曝光 機在被轉印物體上之抗蚀膜上轉印上述轉印圖案。 144683.doc 201035673 種薄膜電曰曰體之製造方法，其特徵在於使用如請求項 12之圖案轉印方法而製造薄膜電晶體。 14. -種多調式光草，其特徵在於具備具彼此互異之透射率 之複數個半it光部，且上述複數個半透光部之透射率波 長依存性相對於特定範圍之光波長，具有彼此實質性相 同之變化率。 15· -種多調式光罩之設計方法，其特徵在於其係具備複數 D 個半透光部之多調式光罩之設計方法，且該設計方法係 1^擇透射率相異之材料作為上述複數個半透光部之材 料，以使上述複數個半透光部之透射率波長依存性相對 於特定範圍之光波長成為實質性相同變化率的方式進 調整。 〇 144683.docA method of manufacturing a multi-mode mask, comprising the steps of: preparing a photomask substrate having a second semi-transmissive film and a light-shielding film sequentially laminated on a transparent substrate; and forming on the photomask substrate a first resist pattern; the first resist pattern is used as a mask, the light shielding film is processed by etching into a light pattern; and a second resist pattern is formed on a surface of the substrate including the light shielding film processed by the pattern And using the second resist pattern as a mask, patterning the second semi-transmissive film by etching, and forming a first surface on a substrate surface including the second semi-transmissive film processed by the pattern a semi-transmissive film; forming a third anti-surname pattern on a surface of the substrate on which the semi-transparent film is formed; and using the third anti-contact pattern as a mask, and etching the first semi-transmissive film And the first semi-transmissive film and the second semi-transmissive film are respectively substantially equal in wavelength dependence on the wavelength (four) of the i-line to the g-line. A method of manufacturing a photomask, characterized by having the following steps Step: preparing a mask base on which a light-shielding film is formed on a transparent substrate; forming a first! resist pattern on the upper:: cover substrate; and using the above-mentioned first resist pattern as a mask to remove the light-shielding film by (4) Performing pattern processing; forming a second semi-transparent film on the substrate surface of the light-shielding film processed on the package 2, forming a second anti-corrosion layer on the substrate surface on which the second semi-transmissive film is formed The surname pattern is used as a mask, and the second semi-transparent and hunting are patterned by etching; and the first semi-transparent is formed on the surface of the substrate including the second semi-transparent film processed by the pattern processing 144683.doc 201035673 Forming the third resist pattern as a mask as a mask; forming a first semi-transmissive film; forming a third resist pattern thereon; and forming the first semi-transmissive layer The film is composed of the first semi-transmissive film and the second semi-transmissive film, respectively, at a transmittance wavelength dependency with respect to a wavelength of an i-line to a line. A method of manufacturing a multi-mode mask is characterized in that it has the following steps: preparing to be formed on a transparent substrate! a semi-transmissive film, a second semi-transmissive film, and a mask base of the light-shielding film; an i-th resist pattern is formed on the mask base; and the first anti-fourth film is used as a mask, and the light-shielding film is used Patterning is performed by etching; a second anti-surname pattern is formed on a surface of the substrate including the light-shielding film processed as described above; and the first or second semi-transparent film is etched by using the second resist pattern as a mask Performing pattern processing; forming a third resist pattern on a surface of the substrate including the i-th or second semi-transmissive film processed by the pattern; and using the third resist pattern as a mask to set the first or The second semi-transmissive film is patterned by etching; and the first semi-transmissive film and the second semi-transmissive film are respectively dependent on the transmittance wavelength of the wavelength within the g-line of the i-line. Composition of materials of roughly equal nature. 12. A pattern transfer method characterized by using a multi-mode mask of claim 4, a resist film on an object to be transferred by an exposure machine for irradiating light of a wavelength region of a line of 1 to g lines The above transfer pattern is transferred up. 144683.doc 201035673 A method of producing a thin film electric discharge body, characterized in that a thin film transistor is produced using the pattern transfer method of claim 12. 14. A multi-tone light grass characterized by comprising a plurality of semi-it light portions having mutually different transmittances, and wherein said plurality of semi-transmissive portions have a transmittance wavelength dependence relative to a specific range of light wavelengths, Have substantially the same rate of change as each other. 15. A method for designing a multi-tone mask, characterized in that it is a design method of a multi-tone mask having a plurality of D semi-transmissive portions, and the design method is to select a material having a different transmittance as the above The material of the plurality of semi-transmissive portions is adjusted so that the transmittance wavelength dependence of the plurality of semi-transmissive portions becomes substantially the same rate of change with respect to the light wavelength of the specific range. 〇 144683.doc
TW098139163A 2008-11-20 2009-11-18 Multitone photomask and method of manufacturing the same TW201035673A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008297115 2008-11-20

Publications (1)

Publication Number Publication Date
TW201035673A true TW201035673A (en) 2010-10-01

Family

ID=42280896

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098139163A TW201035673A (en) 2008-11-20 2009-11-18 Multitone photomask and method of manufacturing the same

Country Status (3)

Country Link
JP (1) JP2010152346A (en)
KR (1) KR20100056981A (en)
TW (1) TW201035673A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5233802B2 (en) * 2009-04-01 2013-07-10 大日本印刷株式会社 Gradation mask and gradation mask manufacturing method
KR101186890B1 (en) * 2009-05-21 2012-10-02 엘지이노텍 주식회사 Half tone mask and method of manufacturig the same

Also Published As

Publication number Publication date
KR20100056981A (en) 2010-05-28
JP2010152346A (en) 2010-07-08

Similar Documents

Publication Publication Date Title
JP5220100B2 (en) Halftone mask having a plurality of semi-transmissive portions and manufacturing method thereof
TW201202839A (en) Photomask and method of manufacturing the same
TW201214021A (en) Multi-tone photomask, method of manufacturing a multi-tone photomask, and pattern transfer method
TWI338814B (en) Multiple resist layer phase shift mask (psm) blank and psm formation method
TWI225661B (en) Manufacturing method of mask blank and mask
JP2010044274A (en) Gray tone mask blank, gray tone mask, method for forming marker for product processing or marker for product information
JP5336226B2 (en) Multi-tone photomask manufacturing method
JP4714311B2 (en) Multi-tone photomask manufacturing method and pattern transfer method for thin film transistor substrate
JP2012513620A (en) Halftone mask and manufacturing method thereof
TW201113634A (en) Multitone photomask, method of manufacturing the multitone photomask, and pattern transfer method
TW201035673A (en) Multitone photomask and method of manufacturing the same
TWI648593B (en) Photomask manufacturing method, photomask, and display device manufacturing method
JP2016118774A (en) Production method of photo mask and production method of display device
JP2009237419A (en) Multi-gradation photomask, manufacturing method thereof, and pattern transfer method
TW201131283A (en) Method of manufacturing a multi-tone photomask, multi-tone photomask blank and method of manufacturing an electronic device
TW407302B (en) Photomask for use in manufacturing semiconductor and method of forming resist pattern
JP4615032B2 (en) Multi-tone photomask manufacturing method and pattern transfer method
KR20130028167A (en) Gray tone mask for fabricating flat panel display and method for fabricating the same
JP7024055B2 (en) Manufacturing method of photomask for manufacturing display devices
KR100787090B1 (en) a half tone mask having multi?half permeation part and a method for manufacturing thereof
KR20070101428A (en) Half tone mask and method for manufactureing thereof
JPH0619107A (en) Production of self-alignment phase shift mask
TW201017328A (en) Multi-tone photomask, photomask blank, and pattern transfer method
TWI820920B (en) Photomask and photomask manufacturing method
JP4848071B2 (en) 5-tone photomask manufacturing method and pattern transfer method