TWI648593B - Photomask manufacturing method, photomask, and display device manufacturing method - Google Patents

Photomask manufacturing method, photomask, and display device manufacturing method Download PDF

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TWI648593B
TWI648593B TW106128858A TW106128858A TWI648593B TW I648593 B TWI648593 B TW I648593B TW 106128858 A TW106128858 A TW 106128858A TW 106128858 A TW106128858 A TW 106128858A TW I648593 B TWI648593 B TW I648593B
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Taiwan
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light
film
shielding
photomask
translucent
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TW106128858A
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Chinese (zh)
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TW201812441A (en
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山口昇
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日商Ｈｏｙａ股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Abstract

本發明提供一種光罩之製造方法，其可降低於使用光罩之曝光步驟中雜散光之產生風險。 於本發明之光罩之製造方法中，該光罩具有藉由將透明基板上之遮光膜及半透光膜分別圖案化而形成的具備透光部、半透光部、及遮光部的轉印用圖案，該光罩之製造方法具有：遮光膜圖案化步驟，其係將形成於透明基板上之遮光膜圖案化，而形成遮光膜圖案；半透光膜形成步驟，其係於包含遮光膜圖案之透明基板上形成半透光膜；透光部形成步驟，其係將半透光膜、或半透光膜與遮光膜局部地去除，而形成透光部；及半透光膜去除步驟，其係去除遮光膜圖案上之半透光膜；且於半透光膜去除步驟中，於成為半透光部之區域形成抗蝕圖案，該抗蝕圖案在半透光部與遮光部鄰接之部分，具有向遮光部側附加特定尺寸之邊限而成之尺寸。The invention provides a method for manufacturing a photomask, which can reduce the risk of stray light during the exposure step using the photomask. In the manufacturing method of the photomask of the present invention, the photomask has a light-transmitting portion, a translucent portion, and a light-shielding portion formed by patterning a light-shielding film and a semi-transparent film on a transparent substrate, respectively. For printing patterns, the manufacturing method of the photomask includes: a light-shielding film patterning step, which is a patterning of a light-shielding film formed on a transparent substrate to form a light-shielding film pattern; a semi-transparent film-forming step, which includes light-shielding A translucent film is formed on the transparent substrate of the film pattern; the translucent portion forming step is to partially remove the translucent film, or the translucent film and the light-shielding film to form a translucent portion; and the translucent portion is removed; A step of removing a semi-transparent film on the light-shielding film pattern; and in the semi-transparent film removing step, forming a resist pattern in a region that becomes a semi-transmissive portion, the resist pattern being formed on the semi-transmissive portion and the light-shielding portion The adjacent portion has a size obtained by adding a margin of a specific size to the light shielding portion side.

Description

光罩之製造方法、光罩、及顯示裝置之製造方法Photomask manufacturing method, photomask, and display device manufacturing method

本發明係關於一種於由液晶面板或有機EL(Electroluminescence，電致發光)面板所代表之顯示裝置之製造中有用之光罩及其製造方法、以及使用有該光罩之顯示裝置之製造方法。The present invention relates to a photomask, a method for manufacturing the same, and a method for manufacturing a display device using the photomask, which are useful in manufacturing a display device represented by a liquid crystal panel or an organic EL (Electroluminescence) panel.

已知一種光罩，其具備將形成於透明基板上之遮光膜及半透光膜圖案化而成之轉印用圖案。半透光膜係使光罩之曝光所用之曝光之光之一部分透過的膜。根據包含該半透光膜之轉印用圖案，可將對被轉印體上之抗蝕膜進行感光及顯影時形成的抗蝕圖案之膜厚或形狀控制為所需之狀態。具備此種轉印用圖案之光罩除被有益地用於半導體裝置之外，還被有益地用於上述顯示裝置之製造。 如上所述之光罩中包含下述專利文獻1、2中記載之多階光罩。多階光罩係具有階調之光罩，亦稱為灰階光罩。又，作為具備半透光部之其他光罩，有相位偏移光罩，其係利用使曝光之光之相位反轉之相位偏移膜，且利用透過光罩之光之干涉作用，藉此提高解像性或焦點深度。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2005-257712號公報 [專利文獻2]日本專利特開2007-114759號公報A photomask is known which includes a transfer pattern formed by patterning a light-shielding film and a translucent film formed on a transparent substrate. A translucent film is a film that partially transmits a part of the exposed light used for exposure of a photomask. According to the transfer pattern including the translucent film, the film thickness or shape of the resist pattern formed when the resist film on the object to be transferred is photosensitive and developed can be controlled to a desired state. The photomask provided with such a pattern for transfer is usefully used not only for semiconductor devices but also for the manufacture of the above display devices. The photomask described above includes the multi-step photomasks described in the following Patent Documents 1 and 2. Multi-level photomask is a photomask with tone, also called gray-level photomask. In addition, as another photomask having a translucent portion, there is a phase shift photomask, which utilizes a phase shift film that inverts the phase of the exposed light and uses the interference effect of light transmitted through the photomask. Improve resolution or depth of focus. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2005-257712 [Patent Literature 2] Japanese Patent Laid-Open No. 2007-114759

[發明所欲解決之問題] 多階光罩之轉印用圖案係具有遮光部、透光部、及半透光部等透光率不同之3個以上之部分，因此欲將複數個具有殘膜厚之抗蝕圖案形成於被轉印體上者。該抗蝕圖案於進行形成於被轉印體上之薄膜之加工時被用作蝕刻遮罩。於該情形時，若使用抗蝕圖案進行第1蝕刻，隨後將抗蝕圖案減膜，則減膜後之抗蝕圖案成為與第1蝕刻時不同之形狀。因此，能夠使用與第1蝕刻不同之形狀之蝕刻遮罩進行第2蝕刻。如此，多階光罩亦可謂具有相當於複數片光罩之功能之光罩，主要可減少顯示裝置之製造所需之光罩之片數，有助於生產效率之提高。 上述專利文獻1、2中記載之多階光罩具有轉印用圖案，該轉印用圖案除具備露出有透明基板之透光部、使用有遮光膜之遮光部之外，還具備使用有使曝光之光之一部分透過之半透光膜之半透光部。因此，認為例如藉由適當控制半透光部之透光率或對於透過光之相位特性等，而可使形成於被轉印體上之抗蝕圖案之局部厚度、或其剖面形狀等變化。因此，於設計多階光罩時，設定對於曝光時使用之光(曝光之光)之所需之透過率或相位特性，選擇適合於此之膜材料或膜厚，準備好成膜條件，藉此可形成具有所需之光特性之多階光罩。 然，於專利文獻1中，記載有根據以下方法製造之多階光罩(灰階光罩)(參照圖7及圖8)。 首先，準備圖7(a)所示之空白光罩100。該空白光罩100係於透明基板101上形成遮光膜102，且於其上塗佈正型抗蝕劑而形成有抗蝕膜103者。 其次，使用雷射描繪機等在抗蝕膜103上描繪(第1描繪)之後進行顯影。藉此，於與半透光部對應之區域(A區域)，抗蝕膜103被去除。又，於與遮光部對應之區域(B區域)及與透光部對應之區域(C區域)，藉由抗蝕膜103之殘存而形成抗蝕圖案103a(參照圖7(b))。 其次，將抗蝕圖案103a作為遮罩而對遮光膜102進行蝕刻(第1蝕刻)，藉此於與遮光部對應之區域(B區域)及與透光部對應之區域(C區域)形成遮光膜圖案102a(參照圖7(c))。 其次，將覆蓋遮光膜圖案102a之抗蝕圖案103a去除(參照圖7(d))。藉此，獲得附遮光膜圖案之基板。 至此成為第1次光微影步驟(描繪、顯影、蝕刻)，且於該階段，劃定與半透光部對應之區域(A區域)。 其次，於上述附遮光膜圖案之基板之整個面成膜半透光膜104(參照圖7(e))。藉此，形成A區域之半透光部。 其次，於半透光膜104之整個面塗佈正型抗蝕劑而形成抗蝕膜105(參照圖8(f))。 其次，於抗蝕膜105上描繪(第2描繪)之後進行顯影。藉此，於與透光部對應之區域(C區域)，抗蝕膜105被去除。又，於與遮光部對應之區域(B區域)及與半透光部對應之區域(A區域)，藉由抗蝕膜105之殘存而形成抗蝕圖案105a(參照圖8(g))。 其次，將抗蝕圖案105a作為遮罩，對半透光膜104與遮光膜圖案102a進行蝕刻(第2蝕刻)，藉此於與透光部對應之區域(C區域)使透明基板101露出(參照圖8(h))。藉此，於與遮光部對應之區域(B區域)形成遮光膜圖案102b，且於與半透光部對應之區域(A區域)及與遮光部對應之區域(B區域)形成半透光膜圖案104a。再者，於第2蝕刻步驟中，藉由將半透光膜104與遮光膜102以相互間之蝕刻特性相同或相似之材料形成而能夠連續地蝕刻2個膜。 其次，將覆蓋半透光膜圖案104a之抗蝕圖案105a去除(參照圖8(i))。 以上，完成多階光罩(灰階光罩)110。 如此，於專利文獻1所記載之製造方法中，藉由2次光微影步驟(描繪、顯影、蝕刻)將遮光膜102及半透光膜104分別圖案化，形成具備遮光部、透光部、及半透光部之轉印用圖案。具有該轉印用圖案之多階光罩110如圖8(i)所示，成為遮光部之B區域之全域作為遮光膜與半透光膜之積層膜而形成。 另一方面，於專利文獻2中，記載有圖10(l)所示之多階光罩(具有階調之光罩)。於該光罩200中，於透明基板201上，遮光區域、半透明區域、及透過區域混合存在。於遮光區域，遮光膜214與半透明膜213依序積層而存在，於半透明區域，僅存在半透明膜213。半透明膜213對曝光之光具有抗反射功能。透明區域係遮光膜214與半透明膜213之任一者均不存在之區域。 以下，使用圖9及圖10對專利文獻2中記載之光罩之製造方法進行說明。 首先，準備圖9(a)所示之空白光罩203。該空白光罩203係於透明基板201上形成有遮光膜202者。 其次，如圖9(b)所示，藉由於遮光膜202上塗佈抗蝕劑而形成抗蝕膜204。 其次，如圖9(c)所示，利用雷射光等能量線205對遮光膜202上之抗蝕膜204進行圖案描繪。 其次，如圖9(d)所示，以特定之顯影液將抗蝕膜204顯影之後進行沖洗，藉此形成抗蝕圖案206。 其次，如圖9(e)所示，藉由對露出於抗蝕圖案206之開口部之遮光膜202進行蝕刻而形成遮光膜圖案207。 其次，如圖9(f)所示，將覆蓋遮光膜圖案207之抗蝕圖案206去除。藉此，獲得附遮光膜圖案之基板208。 其次，如圖9(g)所示，於附遮光膜圖案之基板208之整個面成膜半透明膜209。 其次，如圖10(h)所示，藉由於半透明膜209上塗佈抗蝕劑而形成抗蝕膜210。 其次，如圖10(i)所示，利用雷射光等能量線211對半透明膜209上之抗蝕膜210進行圖案描繪。 其次，如圖10(j)所示，以特定之顯影液將抗蝕膜210顯影之後進行沖洗，藉此形成抗蝕圖案212。 其次，如圖10(k)所示，對自抗蝕圖案212露出之半透明膜209與其下之遮光膜圖案207進行蝕刻，藉此形成半透明膜圖案213與遮光膜圖案214。 其次，如圖10(l)所示，將殘存於遮光膜圖案214上之抗蝕圖案212去除。藉此，獲得具有階調之光罩200。 於以上之製造方法中，藉由第1次遮罩圖案製版將遮光膜202圖案化，並藉由第2次遮罩圖案製版將半透明膜209與遮光膜202圖案化，藉此使上層之半透明膜圖案213與下層之遮光膜圖案207之位置對準。又，使用不存在防止遮光膜202之表面反射之機構之空白光罩203。另一方面，在使用於遮光膜上預先設置有低反射層之通用之空白光罩之情形時，首先，將遮光膜上之低反射膜全部藉由蝕刻而去除，獲得遮光膜露出之基板之後，執行上述第1次之光微影步驟。 然而，本發明者研究後明確瞭解，於上述專利文獻1、2中記載之多階光罩中，存在應分別解決之技術問題。 專利文獻1中記載之多階光罩具有：透明基板露出之透光部、於透明基板上形成半透光膜而成之半透光部、及於透明基板上依序積層遮光膜與半透光膜而成之遮光部。 用於光罩之遮光膜中，多數情形時於其表面側形成有抗反射層。其目的在於，於光罩之製造步驟、或使用有光罩之曝光步驟中抑制不需要之光反射。例如於光罩之製造步驟中，藉由抑制描繪光之反射而提高圖案之尺寸(CD；Critical Dimension，臨界尺寸)精度。又，於使用有光罩之曝光步驟(例如曝光之光之波長λ＝365～436 nm)中，藉由抑制曝光之光之反射而防止因曝光裝置內之雜散光之產生所導致之轉印性之劣化。換言之，形成於遮光膜之表面側之抗反射層係為了發揮此種光學功能而調整適當之光學物性(折射率n、消光係數k)或膜厚者。 但是，於專利文獻1中記載之光罩中，於遮光膜上積層半透光膜而形成遮光部。因此，即便於遮光膜之表面側設置有抗反射層，亦會因存在於其上之半透光膜而改變光之反射、干涉之行為，故存在無法充分地發揮經如上所述調整後之抗反射功能之缺點。 另一方面，於專利文獻2中記載之光罩中，使用對於曝光之光具有抗反射功能之半透明膜。但是，該情形時亦存在如下之問題。 半透明膜不僅對於對曝光之光之反射率、而且對於其透過率亦必須具有符合用途之所需之數值。一般而言，半透明膜所要求之透光率根據用途或遮罩使用者應用之加工條件而不同，其範圍達到5～60%左右。因此，若欲獲得針對特定之用途而具有所需規格之光罩，則不僅必須調整對於曝光之光之反射率之值，而且亦必須調整對於曝光之光之透過率之值。 然而，若為了將對曝光之光之透過率設為所需之值而改變半透明膜之膜厚，則不僅透過率之值會改變，而且反射率之值亦會改變。因此，將透過率與反射率兩者獨立地設定為所需之值並不容易。進一步附帶而言，若改變半透明膜之膜厚，則半透明膜之相位特性亦會改變。因此，根據欲藉由曝光而獲得之電子裝置之種類或精度，有可能受到因相位偏移作用導致之光之干涉之影響，從而無法獲得良好之轉印性。 又，於專利文獻2中，關於半透明膜之透光率與光反射率之控制，藉由各膜質之調整及其厚度之選擇而實現。具體而言，其係利用改變濺鍍條件、添加少許添加物、或改變其密度、改變結晶性(粒徑)、使膜中混入空隙(氣泡)等，而調整表觀上之n(折射率)、k(消光係數：Extinction Coefficient)。 然而，重新獲得具有所需之物性之膜作為應用於光罩之膜絕非易事。原本找到滿足最低限度之特性之光學膜作為光罩之光學膜本身便需要在一定程度上努力開發。例如，關於某光學膜，即便找到於濺鍍等成膜條件下不易產生缺陷之氣體種類或氣體流量，針對該成膜條件下所形成之膜亦必須充分地滿足多種要求規格，例如耐化學品性、蝕刻特性、耐光性、與抗蝕劑之密接性等。因此，為了找到具有所需之物性之新穎之膜，多種條件下之試誤將不可避免。而且，實際上很難說於每次製造新的光罩製品時均能找到於各種製品中滿足遮罩使用者所需之透光率或相位特性的具有合適之n值、k值之膜。 又，於專利文獻2之製造方法中，如上所述，在使用於遮光膜上預先設置有低反射層之通用之空白光罩之情形時，首先，藉由蝕刻將遮光膜上之低反射膜全部去除。因此，於空白光罩上進行最初之描繪時，於遮光膜之表面不存在抑制描繪光之反射之機構。由此，有無法充分地獲得描繪時之尺寸精度(所謂之CD特性)之風險。使用雷射描繪裝置之許多FPD(Flat Panel Display，平板顯示器)用描繪裝置係使用410～420(nm)左右之波長光作為描繪光。假設若於具有無抗反射效果之遮光膜之空白光罩上進行描繪，則於描繪時有在抗蝕膜內產生因入射光與反射光之干涉所形成之駐波之虞。其結果為，有於藉由描繪後之顯影而形成之抗蝕圖案之剖面產生不理想之凹凸之情形。於該情形時，將抗蝕圖案作為遮罩對遮光膜進行蝕刻時，會產生使遮光膜之尺寸精度(CD)劣化之不良情況。 設想於遮光膜表面不設置抗反射功能而使光反射率超過30%之情形，本發明者著眼於減少在空白光罩等光罩基板中產生之光反射之問題。 本發明之目的在於提供一種可降低於使用有光罩之曝光步驟中雜散光之產生風險之光罩之製造方法、及光罩。 [解決問題之技術手段] (第1態樣) 本發明之第1態樣係 一種光罩之製造方法，該光罩具有藉由將形成於透明基板上之遮光膜及半透光膜分別圖案化而形成的具備透光部、半透光部、及遮光部的轉印用圖案，該光罩之製造方法之特徵在於具有： 遮光膜圖案化步驟，其係將形成於上述透明基板上之遮光膜圖案化，形成遮光膜圖案； 半透光膜形成步驟，其係於包含上述遮光膜圖案之上述透明基板上形成半透光膜； 透光部形成步驟，其係將上述半透光膜、或上述半透光膜與上述遮光膜局部地去除，形成上述透光部；及 半透光膜去除步驟，其係將上述遮光膜圖案上之上述半透光膜去除；且 於上述半透光膜去除步驟中，於成為上述半透光部之區域形成抗蝕圖案， 上述抗蝕圖案於上述半透光部與上述遮光部鄰接之部分，具有向上述遮光部側附加特定尺寸之邊限而成之尺寸。 (第2態樣) 本發明之第2態樣係 一種光罩之製造方法，該光罩具有藉由將形成於透明基板上之遮光膜及半透光膜分別圖案化而形成的具備透光部、半透光部、及遮光部的轉印用圖案，該光罩之製造方法之特徵在於具有： 遮光膜圖案化步驟，其係將形成於上述透明基板上之遮光膜圖案化，形成遮光膜圖案； 半透光膜形成步驟，其係於包含上述遮光膜圖案之上述透明基板上形成半透光膜；及 透光部形成步驟，其係藉由將上述半透光膜圖案化而形成上述透光部，並且將上述遮光膜圖案上之上述半透光膜去除；且 於上述透光部形成步驟中，於成為上述半透光部之區域形成抗蝕圖案， 上述抗蝕圖案於上述半透光部與上述遮光部鄰接之部分，具有向上述遮光部側附加特定尺寸之邊限而成之尺寸。 (第3態樣) 本發明之第3態樣係如上述第1或第2態樣之光罩之製造方法，其特徵在於： 將上述邊限之尺寸設為M1(μm)時，0.2＜M1。 (第4態樣) 本發明之第4態樣係如上述第1至第3態樣中任一項之光罩之製造方法，其特徵在於： 將上述邊限之尺寸設為M1(μm)，且與上述半透光部鄰接之上述遮光部之尺寸為S(μm)時，0.2＜M1≦0.7S。 (第5態樣) 本發明之第5態樣係如上述第1至第4態樣中任一項之光罩之製造方法，其特徵在於： 上述遮光膜於表面側具有抗反射層，上述遮光膜之相對於曝光之光之代表波長之光反射率未達30%。 (第6態樣) 本發明之第6態樣係如上述第5態樣之光罩之製造方法，其特徵在於： 將上述遮光膜與上述半透光膜積層時相對於曝光之光之代表波長之光反射率為35%以上。 (第7態樣) 本發明之第7態樣係如上述第1至第6態樣中任一項之光罩之製造方法，其特徵在於： 上述遮光膜與上述半透光膜能夠以相同蝕刻劑進行蝕刻，且上述半透光膜之蝕刻所需時間HT與上述遮光膜之蝕刻所需時間OT之比HT：OT為1：3～1：20。 (第8態樣) 本發明之第8態樣係如上述第1至第7態樣中任一項之光罩之製造方法，其中 上述遮光膜與上述半透光膜能夠以相同蝕刻劑進行蝕刻，且上述遮光膜之平均蝕刻速率OR與上述半透光膜之蝕刻速率HR之比OR：HR為1.5：1～1：5。 (第9態樣) 本發明之第9態樣係如上述第1至第8態樣中任一項之光罩之製造方法，其特徵在於： 上述半透光膜相對於曝光之光之代表波長具有3～60%之透過率。 (第10態樣) 本發明之第10態樣係 一種光罩，其特徵在於：具有藉由將形成於透明基板上之遮光膜及半透光膜分別圖案化而形成的具備透光部、半透光部、及遮光部的轉印用圖案，且 上述透光部係上述透明基板之表面露出而成， 上述半透光部係於上述透明基板上形成上述半透光膜而成， 上述遮光部係於上述透明基板上形成上述遮光膜，並且沿著與上述半透光部鄰接之邊緣而具有於上述遮光膜上積層上述半透光膜之邊限部。 (第11態樣) 本發明之第11態樣係如上述第10態樣之光罩，其特徵在於： 將上述邊限部之尺寸設為M1(μm)時，0.2＜M1。 (第12態樣) 本發明之第12態樣係如上述第10或第11態樣之光罩，其特徵在於： 將上述邊限部之尺寸設為M1(μm)，且與上述半透光部鄰接之上述遮光部之尺寸為S(μm)時，0.2＜M1≦0.7S。 (第13態樣) 本發明之第13態樣係如上述第10至第12態樣中任一項之光罩，其特徵在於： 於上述遮光部中，上述邊限部以外之區域相對於曝光之光之代表波長之光反射率未達30%。 (第14態樣) 本發明之第14態樣係如上述第10至第13態樣中任一項之光罩，其中 上述遮光膜與上述半透光膜能夠以相同蝕刻劑進行蝕刻。 (第15態樣) 本發明之第15態樣係 一種顯示裝置之製造方法，其包括以下步驟： 準備藉由上述第1至第9態樣中任一項之製造方法所製造之光罩、或上述第10至第14態樣中任一項之光罩；及 藉由使用曝光裝置將上述光罩之轉印用圖案曝光而將上述轉印用圖案轉印至被轉印體上。 [發明之效果] 根據本發明，可降低於使用有光罩之曝光步驟中雜散光之產生風險。[Problems to be Solved by the Invention] The transfer pattern of the multi-level photomask has three or more portions having different transmittances, such as a light-shielding portion, a light-transmitting portion, and a semi-light-transmitting portion. A resist pattern having a film thickness is formed on the object to be transferred. This resist pattern is used as an etching mask when processing a thin film formed on a to-be-transferred body. In this case, if the first etching is performed using the resist pattern, and then the resist pattern is reduced, the resist pattern after the reduction is changed to a shape different from that in the first etching. Therefore, the second etching can be performed using an etching mask having a shape different from that of the first etching. In this way, the multi-level mask can also be referred to as a mask having a function equivalent to a plurality of masks, which can mainly reduce the number of masks required for the manufacture of a display device and contribute to the improvement of production efficiency. The multi-step photomasks described in the above Patent Documents 1 and 2 have a pattern for transfer. The pattern for transfer includes a light-transmitting portion with a transparent substrate exposed and a light-shielding portion using a light-shielding film. A translucent portion of a translucent film in which a portion of the exposed light is transmitted. Therefore, it is considered that, for example, by appropriately controlling the light transmittance of the semi-transmissive portion or the phase characteristics with respect to the transmitted light, the local thickness of the resist pattern formed on the body to be transferred, or the cross-sectional shape thereof can be changed. Therefore, when designing a multi-level mask, set the required transmittance or phase characteristics for the light used during exposure (exposed light), select a film material or film thickness suitable for this, and prepare film formation conditions. This can form a multi-step mask with desired light characteristics. However, Patent Document 1 describes a multi-level mask (gray-level mask) manufactured by the following method (see FIGS. 7 and 8). First, a blank mask 100 shown in FIG. 7 (a) is prepared. The blank photomask 100 is formed by forming a light-shielding film 102 on a transparent substrate 101 and applying a positive-type resist thereon to form a resist film 103. Next, development is performed after drawing (first drawing) on the resist film 103 using a laser drawing machine or the like. Thereby, in the region (A region) corresponding to the semi-transmissive portion, the resist film 103 is removed. In addition, a resist pattern 103a is formed in the region (B region) corresponding to the light-shielding portion and the region (C region) corresponding to the light-transmitting portion by remaining the resist film 103 (see FIG. 7 (b)). Next, the light-shielding film 102 is etched (first etching) by using the resist pattern 103a as a mask, thereby forming light-shielding in a region (B region) corresponding to the light-shielding portion and a region (C region) corresponding to the light-transmitting portion. The film pattern 102a (see FIG. 7 (c)). Next, the resist pattern 103a covering the light-shielding film pattern 102a is removed (see FIG. 7 (d)). Thereby, a substrate with a light-shielding film pattern was obtained. This is the first photolithography step (drawing, developing, and etching), and at this stage, a region (A region) corresponding to the semi-transmissive portion is delineated. Next, a semi-transparent film 104 is formed on the entire surface of the substrate with a light-shielding film pattern (see FIG. 7 (e)). Thereby, a semi-transmissive portion of the A region is formed. Next, a positive resist is applied to the entire surface of the translucent film 104 to form a resist film 105 (see FIG. 8 (f)). Next, development is performed after drawing on the resist film 105 (second drawing). Thereby, in a region (C region) corresponding to the light transmitting portion, the resist film 105 is removed. In addition, a resist pattern 105a is formed in the region (B region) corresponding to the light-shielding portion and the region (A region) corresponding to the translucent portion by remaining the resist film 105 (see FIG. 8 (g)). Next, using the resist pattern 105a as a mask, the translucent film 104 and the light-shielding film pattern 102a are etched (second etching), thereby exposing the transparent substrate 101 in a region (C region) corresponding to the light-transmitting portion ( (See Figure 8 (h)). Thereby, a light-shielding film pattern 102b is formed in a region (B region) corresponding to the light-shielding portion, and a semi-light-transmitting film is formed in a region (A region) corresponding to the semi-light-transmitting portion and a region (B-region) corresponding to the light-shielding portion. Pattern 104a. Furthermore, in the second etching step, the two films can be continuously etched by forming the semi-transmissive film 104 and the light-shielding film 102 with materials having the same or similar etching characteristics. Next, the resist pattern 105a covering the translucent film pattern 104a is removed (see FIG. 8 (i)). This completes the multi-level mask (gray-level mask) 110. As described above, in the manufacturing method described in Patent Document 1, the light-shielding film 102 and the translucent film 104 are each patterned by two photolithography steps (drawing, developing, and etching) to form a light-shielding portion and a light-transmitting portion. , And the pattern for the translucent part. As shown in FIG. 8 (i), the multi-step mask 110 having the transfer pattern is formed as a laminated film of a light-shielding film and a translucent film in the entire region of the B region serving as a light-shielding portion. On the other hand, Patent Document 2 describes a multi-step mask (a mask having a tone) as shown in FIG. 10 (l). In the photomask 200, a light-shielding region, a translucent region, and a transmission region are mixed on the transparent substrate 201. In the light-shielding area, the light-shielding film 214 and the translucent film 213 are sequentially laminated to exist, and in the translucent area, only the translucent film 213 exists. The translucent film 213 has an anti-reflection function with respect to the exposed light. The transparent region is a region where neither of the light-shielding film 214 and the translucent film 213 exists. Hereinafter, the manufacturing method of the mask described in patent document 2 is demonstrated using FIG. 9 and FIG. 10. FIG. First, a blank mask 203 shown in FIG. 9 (a) is prepared. The blank photomask 203 is formed by a light-shielding film 202 formed on a transparent substrate 201. Next, as shown in FIG. 9 (b), a resist film 204 is formed by applying a resist on the light-shielding film 202. Next, as shown in FIG. 9 (c), the resist film 204 on the light-shielding film 202 is patterned using energy lines 205 such as laser light. Next, as shown in FIG. 9 (d), the resist film 204 is developed with a specific developer and then rinsed to form a resist pattern 206. Next, as shown in FIG. 9 (e), the light-shielding film pattern 207 is formed by etching the light-shielding film 202 exposed at the opening portion of the resist pattern 206. Next, as shown in FIG. 9 (f), the resist pattern 206 covering the light-shielding film pattern 207 is removed. Thus, a substrate 208 with a light-shielding film pattern is obtained. Next, as shown in FIG. 9 (g), a translucent film 209 is formed on the entire surface of the substrate 208 with a light-shielding film pattern. Next, as shown in FIG. 10 (h), a resist film 210 is formed by applying a resist on the translucent film 209. Next, as shown in FIG. 10 (i), the resist film 210 on the translucent film 209 is patterned using energy lines 211 such as laser light. Next, as shown in FIG. 10 (j), the resist film 210 is developed with a specific developing solution and then rinsed to form a resist pattern 212. Next, as shown in FIG. 10 (k), the translucent film 209 exposed from the resist pattern 212 and the light-shielding film pattern 207 under it are etched, thereby forming a translucent film pattern 213 and a light-shielding film pattern 214. Next, as shown in FIG. 10 (1), the resist pattern 212 remaining on the light-shielding film pattern 214 is removed. Thereby, a mask 200 having a tone is obtained. In the above manufacturing method, the light-shielding film 202 is patterned by the first mask pattern making, and the translucent film 209 and the light-shielding film 202 are patterned by the second mask pattern making, thereby making the upper layer The positions of the translucent film pattern 213 and the light-shielding film pattern 207 of the lower layer are aligned. In addition, a blank mask 203 is used in which there is no mechanism for preventing the surface reflection of the light shielding film 202. On the other hand, in the case of using a general blank mask provided with a low-reflection layer on the light-shielding film in advance, first, all the low-reflection film on the light-shielding film is removed by etching to obtain a substrate on which the light-shielding film is exposed. , Perform the first light lithography step described above. However, the inventors have clearly understood after research that there are technical problems that should be solved separately in the multi-step photomasks described in the aforementioned Patent Documents 1 and 2. The multi-step mask described in Patent Document 1 includes a light-transmitting portion exposed by a transparent substrate, a semi-light-transmitting portion formed by forming a semi-transparent film on the transparent substrate, and a light-shielding film and a semi-transparent layer sequentially stacked on the transparent substrate. A light-shielding portion made of a light film. In a light-shielding film used for a photomask, an antireflection layer is often formed on the surface side of the light-shielding film. The purpose is to suppress unnecessary light reflection during the manufacturing step of the photomask or the exposure step using the photomask. For example, in the manufacturing steps of the mask, the accuracy of the pattern (CD; Critical Dimension) is improved by suppressing the reflection of the drawing light. Moreover, in the exposure step using a mask (for example, the wavelength of the exposed light λ = 365 to 436 nm), by suppressing the reflection of the exposed light, the transfer caused by the generation of stray light in the exposure device is prevented. Sexual deterioration. In other words, the anti-reflection layer formed on the surface side of the light-shielding film is one that adjusts appropriate optical physical properties (refractive index n, extinction coefficient k) or film thickness in order to exert such an optical function. However, in the photomask described in Patent Document 1, a semi-transmissive film is laminated on the light-shielding film to form a light-shielding portion. Therefore, even if an anti-reflection layer is provided on the surface side of the light-shielding film, the behavior of reflection and interference of light will be changed due to the semi-transmissive film existing thereon, so there is a possibility that the adjusted effect as described above cannot be fully exerted. Disadvantages of anti-reflection function. On the other hand, in the photomask described in Patent Document 2, a translucent film having an anti-reflection function with respect to exposed light is used. However, this case also has the following problems. The translucent film must have not only the reflectance to the exposed light, but also the transmittance of the translucent film. Generally speaking, the required light transmittance of the translucent film varies depending on the application or the processing conditions of the mask user application, and its range reaches about 5 to 60%. Therefore, in order to obtain a photomask having a required specification for a specific application, it is necessary to adjust not only the value of the reflectance of the exposed light, but also the value of the transmittance of the exposed light. However, if the thickness of the translucent film is changed in order to set the transmittance of the light to the desired value, not only the transmittance value but also the reflectance value will change. Therefore, it is not easy to set both the transmittance and the reflectance to desired values independently. Furthermore, if the thickness of the translucent film is changed, the phase characteristics of the translucent film will also change. Therefore, depending on the type or accuracy of the electronic device to be obtained by exposure, it may be affected by the interference of light caused by the phase shift effect, so that good transferability cannot be obtained. Further, in Patent Document 2, the control of the light transmittance and light reflectance of the translucent film is achieved by adjusting the quality of each film and selecting the thickness thereof. Specifically, it is used to adjust the apparent n (refractive index) by changing the sputtering conditions, adding a small amount of additives, changing its density, changing the crystallinity (particle size), and mixing voids (bubbles) in the film. ), K (Extinction Coefficient). However, it is not easy to regain a film having desired physical properties as a film applied to a photomask. Originally finding an optical film that satisfies the minimum characteristics as the optical film of the reticle itself needs to be developed to a certain extent. For example, regarding an optical film, even if a gas type or a gas flow rate that does not easily cause defects under filming conditions such as sputtering is found, the film formed under the filming conditions must fully meet various requirements, such as chemical resistance Properties, etching properties, light resistance, adhesion to resist, etc. Therefore, in order to find a novel film with the required physical properties, trial and error under various conditions will be inevitable. Moreover, it is actually difficult to say that every time a new photomask product is manufactured, a film having suitable n-values and k-values can be found in various products that satisfy the light transmittance or phase characteristics required by the mask user. Further, in the manufacturing method of Patent Document 2, as described above, when a general blank mask provided with a low-reflection layer in advance on the light-shielding film is used, first, the low-reflection film on the light-shielding film is etched. Remove all. Therefore, when the first drawing is performed on a blank mask, there is no mechanism for suppressing the reflection of the drawing light on the surface of the light-shielding film. Therefore, there is a risk that the dimensional accuracy (so-called CD characteristics) at the time of drawing cannot be sufficiently obtained. Many FPD (Flat Panel Display, flat panel display) drawing devices using laser drawing devices use light having a wavelength of about 410 to 420 (nm) as the drawing light. It is assumed that if the drawing is performed on a blank mask with a light-shielding film having no anti-reflection effect, there may be a standing wave formed in the resist film due to the interference of incident light and reflected light during the drawing. As a result, undesired unevenness may occur in the cross section of the resist pattern formed by the development after drawing. In this case, when the light-shielding film is etched using the resist pattern as a mask, there is a problem that the dimensional accuracy (CD) of the light-shielding film is deteriorated. In the case where the anti-reflection function is not provided on the surface of the light-shielding film and the light reflectance exceeds 30%, the inventors focused on reducing the problem of light reflection generated in a mask substrate such as a blank mask. An object of the present invention is to provide a photomask manufacturing method and a photomask that can reduce the risk of stray light in an exposure step using a photomask. [Technical means to solve the problem] (First aspect) The first aspect of the present invention is a method for manufacturing a photomask having a pattern of a light-shielding film and a translucent film formed on a transparent substrate, respectively. The pattern for the transfer is provided with a light-transmitting portion, a semi-light-transmitting portion, and a light-shielding portion, and the manufacturing method of the photomask includes: a light-shielding film patterning step, which is to be formed on the transparent substrate. The light-shielding film is patterned to form a light-shielding film pattern; the semi-transparent film forming step is to form a semi-transparent film on the transparent substrate including the light-shielding film pattern; the light-transmitting portion forming step is to form the semi-transparent film Or the semi-transparent film and the light-shielding film are partially removed to form the light-transmitting portion; and the semi-transparent film removing step is to remove the semi-transparent film on the light-shielding film pattern; and In the step of removing the optical film, a resist pattern is formed in a region that becomes the semi-transmissive portion, and the resist pattern has a border of a specific size on a side of the semi-transmissive portion and the light-shielding portion. To the size. (Second aspect) The second aspect of the present invention is a method for manufacturing a photomask having light transmission provided by patterning a light-shielding film and a translucent film formed on a transparent substrate, respectively. Pattern for the transfer of the light-shielding part, the semi-light-transmitting part, and the light-shielding part, the manufacturing method of the photomask is characterized by having: a light-shielding film patterning step, which is patterning the light-shielding film formed on the transparent substrate to form light-shielding A film pattern; a step of forming a semi-transparent film, which forms a semi-transparent film on the transparent substrate including the light-shielding film pattern; and a step of forming a transparent portion, which is formed by patterning the semi-transparent film The light-transmitting portion, and removing the semi-transparent film on the light-shielding film pattern; and in the step of forming the light-transmitting portion, forming a resist pattern on a region that becomes the semi-light-transmitting portion, the resist pattern on the A portion of the translucent portion adjacent to the light-shielding portion has a size obtained by adding a margin of a specific size to the light-shielding portion side. (Third aspect) The third aspect of the present invention is the manufacturing method of the photomask according to the first or second aspect described above, wherein when the size of the margin is M1 (μm), 0.2 < M1. (Fourth aspect) The fourth aspect of the present invention is the method for manufacturing a photomask according to any one of the first to third aspects, wherein the size of the margin is M1 (μm). When the size of the light shielding portion adjacent to the translucent portion is S (μm), 0.2 <M1 ≦ 0.7S. (Fifth aspect) The fifth aspect of the present invention is the method for manufacturing a photomask according to any one of the first to fourth aspects, wherein the light-shielding film has an anti-reflection layer on the surface side, and The light reflectance of the light-shielding film with respect to the representative wavelength of the exposed light does not reach 30%. (Sixth aspect) The sixth aspect of the present invention is a method for manufacturing a photomask according to the fifth aspect, which is characterized by: a representative of the light exposure relative to the exposure light when the light shielding film and the translucent film are laminated. The light reflectance of the wavelength is more than 35%. (Seventh aspect) The seventh aspect of the present invention is the method for manufacturing a photomask according to any one of the first to sixth aspects, wherein the light-shielding film and the translucent film can be the same. The etchant performs etching, and the ratio HT: OT of the time HT required for etching the semi-transparent film to the time OT required for etching the light-shielding film is 1: 3 to 1:20. (Eighth aspect) The eighth aspect of the present invention is the method for manufacturing a photomask according to any one of the first to seventh aspects, wherein the light-shielding film and the translucent film can be performed with the same etchant. Etching, and the ratio OR: HR of the average etching rate OR of the light-shielding film and the etching rate HR of the translucent film is 1.5: 1 to 1: 5. (Ninth aspect) The ninth aspect of the present invention is the method for manufacturing a photomask according to any one of the first to eighth aspects, characterized in that the semi-transmissive film is representative of the exposed light The wavelength has a transmittance of 3 to 60%. (Tenth aspect) A tenth aspect of the present invention is a photomask, which includes a light-transmitting portion formed by patterning a light-shielding film and a translucent film formed on a transparent substrate, respectively. The translucent portion and the pattern for the light-shielding portion are transferred, and the translucent portion is formed by exposing the surface of the transparent substrate; the translucent portion is formed by forming the translucent film on the transparent substrate; The light-shielding part forms the light-shielding film on the transparent substrate, and has a marginal portion for laminating the semi-light-transmitting film on the light-shielding film along an edge adjacent to the semi-light-transmitting part. (Eleventh aspect) The eleventh aspect of the present invention is the photomask according to the tenth aspect described above, characterized in that when the size of the marginal portion is set to M1 (μm), 0.2 <M1. (Twelfth aspect) The twelfth aspect of the present invention is the photomask according to the tenth or eleventh aspect, characterized in that the size of the marginal portion is set to M1 (μm), and is the same as the translucent When the size of the light shielding portion adjacent to the light portion is S (μm), 0.2 <M1 ≦ 0.7S. (Thirteenth aspect) The thirteenth aspect of the present invention is the photomask according to any one of the tenth to twelfth aspects described above, wherein in the light-shielding portion, an area other than the boundary portion is opposite to The light reflectance of the exposed light has a wavelength of less than 30%. (14th aspect) The 14th aspect of the present invention is the photomask according to any one of the 10th to 13th aspects, wherein the light-shielding film and the translucent film can be etched with the same etchant. (Fifteenth aspect) A fifteenth aspect of the present invention is a method for manufacturing a display device, which includes the following steps: preparing a photomask manufactured by the manufacturing method according to any one of the first to ninth aspects, Or the photomask of any one of the tenth to the fourteenth aspects; and transferring the pattern for the transfer onto the object to be transferred by exposing the pattern for the transfer of the photomask using an exposure device. [Effects of the Invention] According to the present invention, it is possible to reduce the risk of stray light in the exposure step using a photomask.

本發明者為解決上述問題進行了潛心研究。而且，於該研究過程中，進行了關於透明基板表面之膜之狀態不同之空白光罩之光反射率的調查及研究。 圖1係以曲線圖形式表示本發明者對複數個不同之空白光罩調查光反射率之結果之圖。 於圖1中，於曲線圖之縱軸取光之反射率(%)，於橫軸取光之波長(nm)。該調查中以下述(1)～(5)之空白光罩為對象，對各個空白光罩之表面照射波長250～800 nm之光，測定反射率。 (1)附遮光膜之空白光罩 (2)附遮光膜之空白光罩＋半透光膜(蝕刻時間：0秒) (3)(2)＋蝕刻(蝕刻時間：8秒) (4)(2)＋蝕刻(蝕刻時間：10秒) (5)(2)＋蝕刻(蝕刻時間：12秒) 再者，於使用有光罩之曝光步驟中使用之曝光之光之波長主要為300～450 nm，多數為單獨使用i光線、h光線及g光線之情形、或設為包含該等全部光線之365～436 nm之波長區域之情形。又，於本說明書中，以2個值規定某範圍時使用之「～」之符號具有「下限值以上且上限值以下」之意。 上述(1)之空白光罩係藉由濺鍍法於透明基板上成膜含鉻(Cr)之遮光膜者。遮光膜之膜厚設為1250 Å，材料設為CrOCN。其中，於遮光膜之表層部分，形成有膜厚300 Å之包含Cr化合物(組成CrO)之抗反射層。 上述(2)之空白光罩係藉由濺鍍法於上述(1)之空白光罩之遮光膜上成膜含鉻(Cr)之半透光膜者，具體而言，上述(2)之空白光罩係將包含CrON之半透光膜以膜厚300 Å積層而成膜者。該空白光罩具備之半透光膜對於曝光之光之代表波長(此處為i光線)之透過率為17%(將透明基板之透過率設為100%)。 上述(3)之空白光罩係將上述(2)之空白光罩具備之半透光膜以適度蝕刻時間8秒蝕刻而成者。半透光膜之蝕刻係使用Cr用蝕刻液進行。 上述(4)之空白光罩係將上述(2)之空白光罩具備之半透光膜以較適度蝕刻時間長2秒即10秒蝕刻而成者。 上述(5)之空白光罩係將上述(2)之空白光罩具備之半透光膜以較適度蝕刻時間長4秒即12秒蝕刻而成者。 觀察上述(1)之空白光罩之反射率時，於上述曝光之光之波長區域即365～436 nm之波長區域，可充分地抑制光之反射。具體而言，曝光之光之波長區域之光反射率顯示低於20%之較低之值，尤其對h光線、g光線之反射率低於15%。 但是，觀察上述(2)之空白光罩之反射率時，與上述(1)之空白光罩相比，於自250 nm及至超過700 nm之較寬之波長區域，表面之反射率上升。具體而言，曝光之光之波長區域之光之反射率顯示為35%以上，尤其對i光線之反射率超過40%。 觀察上述(3)之空白光罩之反射率時，與上述(2)之空白光罩相比，於自250 nm至550 nm之波長區域，表面之反射率降低。具體而言，曝光之光之波長區域之光之反射率低於25%，尤其對i光線之反射率低於20%。 觀察上述(4)之空白光罩之反射率時，與上述(3)之空白光罩相比，於自250 nm至800 nm之全部波長區域，表面之反射率上升。具體而言，曝光之光之波長區域之光之反射率為35%以下，但超過30%。 觀察上述(5)之空白光罩之反射率時，與上述(4)之空白光罩相比，於自250 nm至800 nm之全部波長區域，表面之反射率上升。具體而言，曝光之光之波長區域之光之反射率顯示35%以上。 認為上述(2)之空白光罩之反射率高於上述(1)之空白光罩之原因在於，遮光膜之表面由半透光膜覆蓋，因此基本無法獲得遮光膜之抗反射層之抗反射效果。 認為上述(3)之空白光罩之反射率低於上述(2)之空白光罩之原因在於，將適度蝕刻時間用作半透光膜之蝕刻時間而去除半透光膜，發揮了露出於表面之抗反射層之效果。又，認為上述(3)之空白光罩之反射率並未與上述(1)之空白光罩相同之原因在於，以濺鍍法等成膜半透光膜時，半透光膜之成分進入至遮光膜表層之抗反射層內，其後，即便以蝕刻去除半透光膜，遮光膜之狀態亦不會成為與成膜時完全相同之狀態。 認為上述(4)之空白光罩之反射率高於上述(3)之空白光罩之原因在於，將較適度蝕刻時間長之時間(過蝕刻時間)用作半透光膜之蝕刻時間，因此，遮光膜之表面受到損傷，且於其表層部之抗反射層產生膜減少。 認為上述(5)之空白光罩之反射率高於上述(4)之空白光罩之原因在於，半透光膜之過蝕刻時間變得更長，因此，遮光膜之表面受到更大損傷，更加推進了抗反射層之膜減少。 根據以上之研究結果，以下對本發明之具體實施形態進行說明。 ＜第1實施形態之光罩之製造方法＞ 本發明之第1實施形態之光罩之製造方法如下。 一種光罩之製造方法，該光罩具有藉由將形成於透明基板上之遮光膜及半透光膜分別圖案化而形成的具備透光部、半透光部、及遮光部的轉印用圖案，該光罩之製造方法之特徵在於具有： 遮光膜圖案化步驟，其係將形成於上述透明基板上之遮光膜圖案化，形成遮光膜圖案； 半透光膜形成步驟，其係於包含上述遮光膜圖案之上述透明基板上形成半透光膜； 透光部形成步驟，其係將上述半透光膜、或上述半透光膜與上述遮光膜局部地去除，形成上述透光部；及 半透光膜去除步驟，其係將上述遮光膜圖案上之上述半透光膜去除；且 於上述半透光膜去除步驟中，於成為上述半透光部之區域形成抗蝕圖案， 上述抗蝕圖案於上述半透光部與上述遮光部鄰接之部分，具有向上述遮光部側附加特定尺寸之邊限而成之尺寸。 圖2及圖3係表示本發明之第1實施形態之光罩之製造步驟之側剖視圖。 再者，圖中之A區域係與半透光部對應之區域，B區域係與遮光部對應之區域，C區域係與透光部對應之區域。換言之，A區域係半透光部之形成區域，B區域係遮光部之形成區域，C區域係透光部之形成區域。 (空白光罩準備步驟) 首先，準備圖2(a)所示之空白光罩1。該空白光罩1係於透明基板2上形成遮光膜3且進而將第1抗蝕膜4積層於遮光膜3上而形成者。 透明基板2可使用石英玻璃等透明材料構成。透明基板2之大小或厚度並無限制。若空白光罩1係用於顯示裝置之製造者，則可使用一邊之長度為300～2000 mm、厚度為5～25 mm左右之具有四角形之主面之透明基板2。 遮光膜3於其表面側(與透明基板2相反側)之表層部分具備抗反射層(未圖示)。遮光膜3對於曝光之光之代表波長之光反射率較佳為未達30%，更佳為25%以下。進而較佳為，遮光膜3對於曝光之光之代表波長(例如i光線)之反射率為20%以下。又，較佳為對於i光線、h光線、g光線之全部，為25%以下之反射率。又，關於遮光膜3對於光罩之製造步驟中使用之描繪光(波長410～420 nm)之反射率，亦較佳為未達30%，更佳為25%以下。遮光膜3係包含Cr或Cr化合物之膜，其膜厚為1000～1500 Å，其OD(光學濃度)為3以上。遮光膜3中之抗反射層之厚度為200～400 Å左右。遮光膜3之成膜方法中，可使用例如濺鍍法等公知之方法。 第1抗蝕膜4能夠使用EB(electron beam，電子束)抗蝕劑、光阻劑等形成。此處使用光阻劑作為一例。第1抗蝕膜4可藉由將光阻劑塗佈於遮光膜3上而形成。光阻劑可為正型、負型之任一者，此處使用正型之光阻劑。第1抗蝕膜4之膜厚可設為5000～10000 Å左右。 (遮光膜圖案化步驟) 遮光膜圖案化步驟具有第1抗蝕圖案形成步驟、遮光膜蝕刻步驟、及第1抗蝕劑剝離步驟。 (第1抗蝕圖案形成步驟) 於第1抗蝕圖案形成步驟中，如圖2(b)所示，藉由將第1抗蝕膜4圖案化而形成第1抗蝕圖案4a。於該步驟中對上述空白光罩1使用描繪裝置描繪(第1描繪)所需之圖案。用於描繪之能量線可使用電子束或雷射束等，此處使用雷射束(波長410～420 nm)。由於為具有遮光膜之抗反射層，故可進行CD精度較高之描繪。若對空白光罩1進行描繪之後進行顯影，則形成第1抗蝕圖案4a。 (遮光膜蝕刻步驟) 於遮光膜蝕刻步驟中，如圖2(c)所示，將第1抗蝕圖案4a作為遮罩對遮光膜3進行蝕刻。藉此，將露出於第1抗蝕圖案4a之開口部之遮光膜3藉由蝕刻而去除。遮光膜3之蝕刻可為乾式蝕刻，亦可為濕式蝕刻。於上述空白光罩1中以包含Cr或Cr化合物之膜構成遮光膜3，故可應用使用有Cr用蝕刻液之濕式蝕刻。藉此，將透明基板2上之遮光膜3圖案化而形成遮光膜圖案3a。 再者，濕式蝕刻有使膜剖面產生微小之側蝕之情形，但於圖式中省略該點。於必須考慮該微小之側蝕對CD精度造成之影響之情形時，較佳為於使用上述描繪裝置進行描繪時預先對描繪資料實施資料加工。具體而言，以抵消由側蝕引起之遮光部之尺寸之減少量之方式減小第1抗蝕圖案4a之開口尺寸即可。 (第1抗蝕劑剝離步驟) 於第1抗蝕劑剝離步驟中，如圖2(d)所示，剝離第1抗蝕圖案4a。藉此，獲得附遮光膜圖案3a之透明基板2。 (半透光膜形成步驟) 其次，如圖2(e)所示，於包含遮光膜圖案3a之透明基板2上形成半透光膜5。半透光膜5藉由特定之成膜方法形成於透明基板2之整個面。作為半透光膜5之成膜方法，與上述遮光膜3同樣地可應用濺鍍法等公知之方法。此處利用能夠以與遮光膜3相同之蝕刻劑進行蝕刻之材料而形成半透光膜5。具體而言，與上述遮光膜3同樣地，以包含Cr或Cr化合物之膜形成半透光膜5。 半透光膜5之透光率對於光罩10(參照圖6)之曝光所使用之曝光之光中包含之代表波長，較佳為3～60%，更佳為10～50%。此處記述之透光率係將透明基板2之透光率設為100%時之值。又，所謂曝光之光係基於包含i光線、h光線、g光線之寬波長光源者、或將其中任一者作為代表波長而選擇性地使用者。 半透光膜5於i光線～g光線之波長區域之透光率之偏差較佳為0～8%。此處記述之半透光膜5之透光率之偏差係將對於i光線之透過率設為Ti(%)且將對於g光線之透過率設為Tg(%)時之Ti與Tg之差的絕對值。 半透光膜5所具有之曝光之光之相位偏移量較佳為90度以下，更佳為5～60度。該相位偏移量亦係針對上述選擇波長而言。因此，為了滿足上述條件，較佳為調整半透光膜5之膜質、及膜厚。半透光膜5之膜厚根據所需之透光率而改變，但可設為大致50～500 Å之範圍。 (第2抗蝕膜形成步驟) 其次，如圖2(f)所示，將第2抗蝕膜6積層於半透光膜5上而形成。第2抗蝕膜6與上述第1抗蝕膜4同樣地，可藉由塗佈光阻劑而形成。 (第2抗蝕圖案形成步驟) 其次，如圖2(g)所示，藉由使第2抗蝕膜6圖案化而形成第2抗蝕圖案6a。於該步驟中，對於空白光罩1，與上述第1描繪同樣地使用描繪裝置描繪(第2描繪)所需之圖案之後，藉由對第2抗蝕膜6進行顯影而形成第2抗蝕圖案6a。第2抗蝕圖案6a係用以形成光罩之透光部之抗蝕圖案。第2抗蝕圖案6a覆蓋與半透光部對應之區域A及與遮光部對應之區域B，另一方面，於與透光部對應之區域C具有開口。 又，第2抗蝕圖案6a係用以於與遮光部(B區域)鄰接之透光部(C區域)將遮光膜3與半透光膜5連續地蝕刻去除之抗蝕圖案，且係用以於與半透光部(A區域)鄰接之透光部(C區域)將半透光膜5蝕刻去除之抗蝕圖案。但是，根據轉印用圖案之設計，亦存在第2抗蝕圖案6a僅為前者、或僅為後者之情形。 於下述透光部形成步驟中伴隨半透光膜5之蝕刻、或半透光膜5與遮光膜3之蝕刻產生之少許側蝕對CD精度造成影響之情形時，亦能夠預先以成為減小相當於側蝕之尺寸量之較小之開口的方式對第2描繪用之描繪資料實施資料加工。 (透光部形成步驟) 其次，如圖3(h)所示，將第2抗蝕圖案6a作為遮罩，對露出於第2抗蝕圖案6a之開口部之半透光膜5進行蝕刻，藉此露出遮光膜3，於存在該遮光膜3之情形時，繼半透光膜5之蝕刻之後對遮光膜3進行蝕刻。藉此，於與透光部對應之區域C，將半透光膜5、或半透光膜5與遮光膜3局部地去除。其結果，於區域C，藉由透明基板2之表面露出而形成透光部11(參照圖6)。 此處，於由包含Cr或Cr化合物之膜形成遮光膜3與半透光膜5之情形時，可應用使用有Cr用蝕刻液之濕式蝕刻。又，於遮光膜3與半透光膜5由均能夠以相同之蝕刻劑進行蝕刻之材料而形成之情形時，半透光膜5之蝕刻所需時間HT與遮光膜(包含抗反射層)3之蝕刻所需時間OT之比HT：OT較佳為1：3～1：20。更佳為HT：OT為1：5～1：10。又，遮光膜(包含抗反射層)3之平均蝕刻速率OR與半透光膜5之蝕刻速率HR之比OR：HR可為1.5：1～1：5，較佳為1：1～1：5。 (第2抗蝕劑剝離步驟) 其次，如圖3(i)所示，剝離第2抗蝕圖案6a。於該階段，與遮光部對應之區域B整體成為遮光膜3與半透光膜5之積層構造。 (半透光膜去除步驟) 半透光膜去除步驟具有第3抗蝕膜形成步驟、第3抗蝕圖案形成步驟、及半透光膜蝕刻步驟。 (第3抗蝕膜形成步驟) 第3抗蝕膜形成步驟中，如圖3(j)所示，將第3抗蝕膜7積層於半透光膜5上而形成。第3抗蝕膜7與上述第1抗蝕膜4及第2抗蝕膜6同樣地，可藉由塗佈光阻劑而形成。 (第3抗蝕圖案形成步驟) 於第3抗蝕圖案形成步驟中，如圖3(k)所示，藉由將第3抗蝕膜7圖案化而於成為半透光部之區域(A區域)形成第3抗蝕圖案7a。於該步驟中，對於空白光罩1，與上述第1描繪及第2描繪同樣地，使用描繪裝置描繪(第3描繪)所需之圖案之後，藉由對第3抗蝕膜7進行顯影而形成第3抗蝕圖案7a。第3抗蝕圖案7a係用以於與遮光部對應之區域B去除覆蓋遮光膜3之半透光膜5之抗蝕圖案。第3抗蝕圖案7a覆蓋與半透光部對應之區域A，另一方面，於與遮光部對應之區域B具有開口。 但是，必須考慮於第2抗蝕圖案6a與第3抗蝕圖案7a之間產生對準偏移之情況，而對適用於第3描繪之描繪資料進行附加特定之邊限之資料加工。具體而言，於產生上述對準偏移之情形時，亦於半透光部(A區域)與遮光部(B區域)之邊界，以第3抗蝕圖案7a之邊緣部分確實地覆蓋半透光膜5之方式將第3抗蝕圖案7a之尺寸如下般設定。即，於半透光部與遮光部鄰接之部分，使第3抗蝕圖案7a具有向遮光部側(B區域側)附加特定尺寸之邊限而成之尺寸。於圖3(k)中以M1(μm)表示第3抗蝕圖案7a之邊限之尺寸。此處所謂邊限之尺寸M1係相鄰之半透光部(A區域)與遮光部(B區域)之排列方向上之寬度之尺寸。 若假設於光罩之製造步驟中可能產生之對準偏移，則邊限之尺寸M1(μm)較佳為0.2＜M1，更佳為0.5≦M1。又，若僅考慮對準偏移，則邊限之尺寸M1(μm)小於與半透光部(A區域)鄰接之遮光部(B區域)中的與邊限之寬度相同之方向、即相鄰之半透光部(A區域)與遮光部(B區域)之排列方向之尺寸S(μm)即可。然而，若將邊限之尺寸M1過大地設定，則半透光膜5會覆蓋與遮光部對應之B區域之大部分，故曝光時產生雜散光之風險增加。因此，實際上，由半透光膜5覆蓋遮光部13之尺寸S之超過70%之區域時，於下述半透光膜去除步驟中去除遮光膜3上之半透光膜5時，有於遮光部露出之遮光膜3之面積過小而無法充分地獲得抗反射效果之傾向。因此，相對於與半透光部鄰接之遮光部之尺寸S(μm)，邊限之尺寸M1(μm)較佳為設為M1≦0.7S，更佳為設為M1≦0.5S，進而較佳為設為M1≦0.3S，以特定程度上確保抗反射層之表面之露出比例為宜。 再者，此處所謂邊限之尺寸係關於與遮光部鄰接之半透光部之一個邊緣之尺寸。因此，若為被遮光部夾住兩側之半透光部，則於兩側之邊緣分別以上述尺寸M1設定邊限。 又，關於半透光部(A區域)與透光部(C區域)鄰接之部分，由於由第3抗蝕圖案7a覆蓋，故無需進行資料加工。 (半透光膜蝕刻步驟) 於半透光膜蝕刻步驟中，如圖3(l)所示，將第3抗蝕圖案7a作為遮罩，對露出於第3抗蝕圖案7a之開口部之半透光膜5進行蝕刻。藉此，於與遮光部對應之區域B，將遮光膜圖案3a上之半透光膜5藉由蝕刻而去除。又，於半透光膜5被去除後之部分，遮光膜3之表面、即抗反射層之表面露出。 於如上所述般對半透光膜5進行蝕刻之情形時，於應藉由蝕刻去除之半透光膜5之下存在遮光膜3，故蝕刻終點之檢測變得重要。尤其於半透光膜5與遮光膜3由能夠以相同蝕刻劑進行蝕刻之材料而形成之情形時，因過度地進行半透光膜5之蝕刻而有存在於遮光膜3之表層部之抗反射層受到損傷之風險，故蝕刻終點之檢測更為重要。以下對此進行敍述。 (第3抗蝕劑剝離步驟) 其次，如圖3(m)所示，剝離第3抗蝕圖案7a。 藉由以上之步驟而完成圖6所示之光罩10。於該光罩10中，藉由於上述半透光膜去除步驟中將遮光膜圖案3a上之半透光膜5去除而使遮光膜3之表面(抗反射層之表面)之露出面積增加。因此，可降低於使用有光罩10之曝光步驟中雜散光之產生風險。 ＜第2實施形態之光罩之製造方法＞ 本發明之第2實施形態之光罩之製造方法如下。 一種光罩之製造方法，該光罩具有藉由將形成於透明基板上之遮光膜及半透光膜分別圖案化而形成的具備透光部、半透光部、及遮光部的轉印用圖案，該光罩之製造方法之特徵在於具有： 遮光膜圖案化步驟，其係將形成於上述透明基板上之遮光膜圖案化，形成遮光膜圖案； 半透光膜形成步驟，其係於包含上述遮光膜圖案之上述透明基板上形成半透光膜；及 透光部形成步驟，其係藉由將上述半透光膜圖案化而形成上述透光部，並且將上述遮光膜圖案上之上述半透光膜去除；且 於上述透光部形成步驟中，於成為上述半透光部之區域形成抗蝕圖案， 上述抗蝕圖案於上述半透光部與上述遮光部鄰接之部分，具有向上述遮光部側附加特定尺寸之邊限而成之尺寸。 圖4及圖5係表示本發明之第2實施形態之光罩之製造步驟的側剖視圖。 再者，於該第2實施形態中，對與上述第1實施形態相對應之部分標註相同符號進行說明。 (空白光罩準備步驟) 首先，準備圖4(a)所示之空白光罩1。與上述第1實施形態同樣地，該空白光罩1係於透明基板2上形成遮光膜3且進而將第1抗蝕膜4積層於遮光膜3上而形成者。 (遮光膜圖案化步驟) 遮光膜圖案化步驟具有第1抗蝕圖案形成步驟、遮光膜蝕刻步驟、及第1抗蝕劑剝離步驟。 (第1抗蝕圖案形成步驟) 於第1抗蝕圖案形成步驟中，如圖4(b)所示，藉由將第1抗蝕膜4圖案化而形成第1抗蝕圖案4a。於該步驟中對於上述空白光罩1使用描繪裝置描繪(第1描繪)所需之圖案。藉由具有遮光膜3之抗反射層而可進行CD精度較高之描繪。第1抗蝕圖案4a以覆蓋與遮光部對應之區域B之方式形成於遮光膜3上。 (遮光膜蝕刻步驟) 於遮光膜蝕刻步驟中，如圖4(c)所示，藉由將第1抗蝕圖案4a作為遮罩對遮光膜3進行蝕刻而形成遮光膜圖案3a。藉此，將透明基板2上之遮光膜3圖案化而形成遮光膜圖案3a。於該步驟中，與上述第1實施形態同樣地使用濕式蝕刻。又，視需要可預先估計側蝕量而對描繪資料實施資料加工，補償遮光部之尺寸，該點亦與第1實施形態之製造方法相同。 再者，於第2實施形態中，對遮光膜3之蝕刻僅為本步驟，故此處劃定遮光部之位置與尺寸。 (第1抗蝕劑剝離步驟) 於第1抗蝕劑剝離步驟中，如圖4(d)所示，剝離第1抗蝕圖案4a。藉此，獲得附遮光膜圖案3a之透明基板2。 (半透光膜形成步驟) 其次，圖4(e)所示，於包含遮光膜圖案3a之透明基板2上形成半透光膜5。半透光膜5於透明基板2之整個面藉由特定之成膜方法而形成。作為半透光膜5之成膜方法，與上述遮光膜3同樣地，可應用濺鍍法等公知之方法。關於半透光膜5之材料、特性等，與上述第1實施形態相同。 (透光部形成步驟) 透光部形成步驟具有第2抗蝕膜形成步驟、第2抗蝕圖案形成步驟、及半透光膜蝕刻步驟。 (第2抗蝕膜形成步驟) 於第2抗蝕膜形成步驟中，如圖5(f)所示，將第2抗蝕膜6積層於半透光膜5上而形成。第2抗蝕膜6與上述第1抗蝕膜4同樣地，可藉由塗佈光阻劑而形成。 (第2抗蝕圖案形成步驟) 於第2抗蝕圖案形成步驟中，如圖5(g)所示，藉由將第2抗蝕膜6圖案化而於成為半透光部之區域(A區域)形成第2抗蝕圖案6a。於該步驟中，對於空白光罩1，與上述第1描繪同樣地使用描繪裝置描繪(第2描繪)所需之圖案之後，藉由對第2抗蝕膜6進行顯影而形成第2抗蝕圖案6a。第2抗蝕圖案6a覆蓋與半透光部對應之區域A，並且於與透光部對應之區域C具有開口，且於與遮光部對應之區域B，基於去除遮光膜3上之半透光膜5之目的而具有開口。 但是，必須考慮於第1抗蝕圖案3a與第2抗蝕圖案6a之間產生對準偏移之情況，而對適用於第2描繪之描繪資料進行附加特定之邊限之資料加工。具體而言，於產生上述對準偏移之情形時，亦於半透光部(A區域)與遮光部(B區域)之邊界，以第2抗蝕圖案6a之邊緣部分確實地覆蓋半透光膜5之方式將第2抗蝕圖案6a之尺寸如下般設定。即，於半透光部與遮光部之邊界，使第2抗蝕圖案6a具有向遮光部側(B區域側)附加特定尺寸之邊限而成之尺寸。於圖5(g)中以M1(μm)表示第2抗蝕圖案6a之邊限之尺寸。關於邊限之尺寸M1，可與上述第1實施形態同樣地設定。 另一方面，於半透光部與透光部鄰接之部分，無需考慮基於對準偏移所形成之邊限，只要將適度尺寸之開口設置於與透光部對應之區域即可。但是，於伴隨半透光膜5之蝕刻產生之微小之側蝕對CD精度造成影響之情形時，亦能夠預先以成為減小相當於側蝕之尺寸量之較小之開口的方式對描繪資料實施資料加工。 (半透光膜蝕刻步驟) 於半透光膜蝕刻步驟中，如圖5(h)所示，將第2抗蝕圖案6a作為遮罩，對露出於第2抗蝕圖案6a之開口部之半透光膜5進行蝕刻。藉此，於區域C，藉由透明基板2之表面露出而形成透光部11(參照圖6)。又，於與遮光部對應之區域B，遮光膜圖案3a上之半透光膜5藉由蝕刻而去除。 (第2抗蝕劑剝離步驟) 其次，如圖5(i)所示，剝離第2抗蝕圖案6a。 藉由以上步驟而完成圖6所示之光罩10。於該光罩10中，藉由於上述透光部形成步驟將遮光膜圖案3a上之半透光膜5去除而使遮光膜3之表面(抗反射層之表面)之露出面積增加。因此，可降低於使用有光罩10之曝光步驟中雜散光之產生風險。 若應用本發明之第2實施形態之製造方法而製造光罩10，則儘管具有包含透光部、半透光部、及遮光部之轉印用圖案，且具有將遮光部上之半透光膜去除之步驟，但亦可將描繪之次數(即微影步驟之次數)僅設為2次，非常有效率。又，若採用該製造方法，則不受限於圖案之設計，而於第1抗蝕圖案形成步驟中，實質上劃定遮光部之位置與尺寸。因此，即便有於其後之步驟中產生之對準偏移之風險，遮光部之尺寸等亦不會受其影響。因此，於遮光部之面積會對最終欲獲得之裝置之動作性能造成影響之情形時，採用該製造方法較為有利。 又，於本發明之第2實施形態之製造方法中，將第2抗蝕圖案6a用作遮罩之蝕刻係僅以半透光膜5為對象進行。因此，與繼半透光膜5之後對遮光膜3進行蝕刻之情形相比，蝕刻時間變短。因此，於蝕刻中不易進行側蝕，可較高地維持遮光部之尺寸精度。即，於該製造方法中，任一蝕刻步驟均對單個膜進行蝕刻，並無將2個以上之膜之積層連續地蝕刻去除之步驟。因此，可精細地控制蝕刻所需時間，不會產生由過蝕刻導致之CD之混亂。 ＜實施形態之光罩之構成＞ 圖6係表示本發明之實施形態之光罩之構成者，(a)係俯視圖，(b)係(a)之X-X剖視圖。 圖示之光罩10具有具備透光部11、半透光部12、及遮光部13之轉印用圖案。該光罩10亦可藉由上述第1實施形態之製造方法、或上述第2實施形態之製造方法之任一者而製造。透光部11、半透光部12、及遮光部13係藉由將形成於透明基板2上之遮光膜3及半透光膜5分別圖案化而形成者。透光部11係透明基板2之表面露出之部分。半透光部12係於透明基板2上形成有半透光膜5之部分。於該半透光部12未形成遮光膜3。遮光部13係於透明基板2上形成有遮光膜3並且沿著與半透光部12鄰接之邊緣而具有於遮光膜3上積層有半透光膜5之邊限部14之部分。亦即，於邊限部14以外之遮光部13，半透光膜5被去除，遮光膜3露出。 若假定於上述製造步驟可能產生之對準偏移，則上述邊限部14之寬度M1(μm)較佳為0.2＜M1，更佳為0.5≦M1。又，若僅考慮對準偏移，則邊限部14之寬度M1(μm)小於與半透光部12鄰接之遮光部13之尺寸S(μm)即可。再者，該尺寸S係半透光部12與遮光部13之排列方向上之尺寸。然而，若邊限部14具有過大之寬度，則會由半透光膜5覆蓋遮光部13之大部分，故於曝光時產生雜散光之風險增加。即，實際上，由半透光膜5覆蓋上述遮光部13之尺寸S(μm)之超過70%之區域時，於半透光膜去除步驟中去除遮光膜3上之半透光膜5時，有於遮光部13露出之遮光膜3之尺寸(面積)過小而無法充分地獲得抗反射效果之傾向。因此，相對於與半透光部12鄰接之遮光部13之尺寸S(μm)，邊限部14之寬度M1(μm)較佳為設為M1≦0.7S，更佳為設為M1≦0.5S，進而較佳為設為M1≦0.3S，以特定程度上確保抗反射層之表面之露出比例為宜。 再者，此處所謂邊限部14之寬度M1係關於與遮光部13鄰接之半透光部12之一個邊緣之寬度。因此，若為被遮光部13夾住兩側之半透光部12，則於兩側之邊緣分別以上述寬度M1具有邊限部14。 對於光罩10之曝光所使用之曝光之光中包含之代表波長，半透光部12之透光率可設為較佳為3～60%。作為曝光之光，可設為基於包含i光線、h光線、g光線之寬波長光源者、或將其中任一者作為代表波長而選擇性地使用者。例如將光罩10用作多階光罩之情形時，半透光部12對於曝光之光代表波長之透過率更佳為10～50%。此處記述之透光率係將透明基板2之透光率設為100%時之值。 半透光部12於i光線～g光線之波長區域之透光率之偏差較佳為0～8%。此處記述之半透光部12之透光率之偏差係將對於i光線之透過率設為Ti、且將對於g光線之透過率設為Tg時之Ti與Tg之差的絕對值。 半透光部12所具有之曝光之光之相位偏移量較佳為90度以下，更佳為5～60度。該相位偏移量亦係針對上述選擇波長而言。因此，為了滿足上述條件，較佳為調整半透光膜5之膜質、及膜厚。半透光膜5之膜厚根據所需之透光率而改變，但可設為大致50～500 Å之範圍。 本發明之光罩亦可用作相位偏移光罩。於該情形時，較理想為將半透光部12所具有之曝光之光之相位偏移量設為150～210度。藉此，半透光部12使曝光之光之相位反轉，故可有助於利用光之干涉之解像性之提高或焦點深度之增大。又，該情形時之半透光部12對於代表波長之透過率可設為較佳為3～30%，更佳為5～20%。 於本發明之光罩中，關於半透光膜5之材料，可設為例如含有Cr、Ta、Zr、Si、Mo等之膜，可自該等化合物(氧化物、氮化物、碳化物、氮氧化物、氮碳化物、氮碳氧化物等)中選擇適當者。尤其可較佳地使用Cr之化合物。 作為半透光膜5之其他材料，可使用Si之化合物(SiON等)、或過渡金屬矽化物(MoSi等)、或其化合物。作為過渡金屬矽化物之化合物，可列舉氧化物、氮化物、氮氧化物、氮碳氧化物等，較佳為可例示MoSi之氧化物、氮化物、氮氧化物、氮碳氧化物等。 於本發明之光罩中，遮光部13於透明基板2上形成遮光膜3，並且沿著與半透光部12鄰接之邊緣而具有於遮光膜3上積層有半透光膜5之邊限部14。而且，於邊限部14以外之遮光部13，形成於遮光膜3之表面、即其表層部之抗反射層露出。其原因在於，於邊限部14以外之遮光部13，存在於遮光膜3之表面之半透光膜5實質上被去除。 於本發明之光罩中，遮光膜(包含抗反射層)3與半透光膜5能夠以相同蝕刻劑進行蝕刻。於該情形時，對遮光膜3上之半透光膜5進行蝕刻時之蝕刻結束時間於基板面內有偏差，因該面內偏差而導致遮光膜3之蝕刻過度，可能會產生抗反射層之表層側略微受到損傷之情形。如此，即便於遮光膜3之表面產生微小之蝕刻，使抗反射層之表面產生一部分損傷之情形時，於遮光膜3之表面，對於曝光之光之代表波長之光反射率亦較佳為未達30%。更佳為，對於曝光之光之全部波長，遮光膜3表面之反射率未達30%。於此種情形時，亦可獲得本發明之作用效果。 另一方面，為抑制如上所述之過度之蝕刻，較理想為遮光膜3表層部之抗反射層之蝕刻速率較半透光膜5小。例如將抗反射層之蝕刻速率設為RR，且將半透光膜5之蝕刻速率設為HR時，以RR＜HR為宜。較佳為1.5RR＜HR。 關於遮光膜3之材料，可設為例如含有Cr、Ta、Zr、Si、Mo等之膜，可自該等單體或化合物(氧化物、氮化物、碳化物、氮氧化物、氮碳化物、氮碳氧化物等)中選擇適當者。尤其可較佳地使用Cr或Cr之化合物。 作為遮光膜3之其他材料，可使用過渡金屬矽化物(MoSi等)、或其化合物。作為過渡金屬矽化物之化合物，可列舉氧化物、氮化物、氮氧化物、氮碳氧化物等，較佳為可例示MoSi之氧化物、氮化物、氮氧化物、氮碳氧化物等。 遮光膜3較佳為於其表面側(與透明基板2相反之側)具有抗反射層。於該情形時，例如若將包含抗反射層之遮光膜3整體之厚度設為1000～2000 Å、更佳為設為1100～1800 Å，則抗反射層可占遮光膜3之表層部分之100～500 Å，更佳為占200～400 Å。抗反射層可藉由使遮光膜3成分之一部分(例如氧、氮、碳等之添加成分)於表層部分變化等而形成。 又，遮光膜3與半透光膜5亦可由對於彼此之蝕刻劑具有耐受性(即具有蝕刻選擇性)之材料而形成，但並非必須如此制約。即，可使用能夠藉由相同蝕刻劑進行蝕刻之材料而形成遮光膜3與半透光膜5，此點為本發明之優點。該情形時，較佳為遮光膜3與半透光膜5均含有同一材料。所謂「含有同一材料」係含有相同金屬、或均含有Si之情形等。例如「含有同一材料」係遮光膜3與半透光膜5均為含有Cr之膜、或均為包含同一金屬M之金屬矽化物MXSiY(X、Y為整數)或其化合物之情形等。作為較佳之例，可列舉遮光膜(包含抗反射層)3與半透光膜5均為包含Cr之化合物之情形。 於遮光膜3與半透光膜5能夠藉由同一蝕刻劑進行蝕刻之情形時，較佳為相對於同一蝕刻劑之蝕刻所需時間對於遮光膜3與半透光膜5互不相同。具體而言，較佳為與遮光膜3之蝕刻所需時間相比，半透光膜5之蝕刻所需時間較短。該點尤其於應用第2實施形態之製造方法之情形時有利。又，如上所述，半透光膜5之蝕刻所需時間HT與遮光膜(包含抗反射層)3之蝕刻所需時間OT之比較佳為HT：OT為1：3～1：20。更佳為HT：OT為1：5～1：10。 所謂蝕刻所需時間係指自成為蝕刻對象之膜之蝕刻開始起直至該膜消失為止所需之時間。蝕刻所需時間可根據蝕刻速率及膜厚而調整。例如與半透光膜5之膜厚相比，遮光膜3之膜厚較大之情形時，半透光膜5之蝕刻所需時間相對較短。所謂蝕刻速率係指藉由蝕刻劑進行蝕刻時每單位時間之蝕刻量。蝕刻速率係根據構成各膜之原材料之組成或膜質而決定。 本實施形態中採用濕式蝕刻，故相當於蝕刻劑者成為蝕刻液。於該情形時，對於同一蝕刻液，遮光膜3與半透光膜5之蝕刻速率可相同，亦可不同。例如即便遮光膜3與半透光膜5均含有共同之金屬，但因其他成分(例如氧、氮、碳等)不同，有時對於共同之蝕刻液之蝕刻速率亦會產生差異。遮光膜(包含抗反射層)3之平均蝕刻速率OR與半透光膜5之蝕刻速率HR之比OR：HR可為1.5：1～1：5，較佳為1：1～1：5。更佳為半透光膜5之蝕刻速率HR為遮光膜(包含抗反射層)3之平均蝕刻速率OR以上。於該情形時，容易調整上述蝕刻所需時間之比(HT：OT)。所謂遮光膜3之平均蝕刻速率係作為包含抗反射層之遮光膜3之平均蝕刻速率。 遮光膜3係對於曝光之光具有確實之遮光性者，其膜厚較佳為大於半透光膜5之膜厚。具體而言，半透光膜5之膜厚HA與遮光膜3之膜厚OA之比HA：OA較佳為1：2.5～1：20，更佳為1：10～1：20。可於該範圍，將半透光膜5之透過率調整為所需值。 又，將遮光膜3與半透光膜5積層之狀態下之OD(光學濃度)為2.5～7.5，較佳為3.0～5。遮光膜3單膜之OD較佳為3.0～5。 於本發明之光罩中，遮光部(除邊限部14外)13對於曝光之光之代表波長之之反射率較佳為未達30%，更佳為25%以下。進而較佳為，以遮光部13對於曝光之光之代表波長(例如i光線)之反射率為20%以下，或對於i光線、h光線、g光線之全部為25%以下為宜。又，關於遮光部13對於光罩之製造步驟中使用之描繪光(波長410～420 nm)之反射率，亦較佳為未達30%，更佳為25%以下。 又，本發明之效果在將遮光膜3與半透光膜5積層之狀態下對於曝光之光之光反射率為35%以上時較為顯著，為40%以上時更加顯著。 於本發明之光罩中，遮光部13沿著與半透光部12鄰接之邊緣而具有於遮光膜3上積層有半透光膜5之邊限部14。將邊限部14之寬度設為M1(μm)時，較佳為0.2＜M1。又，與半透光部12鄰接之遮光部13之尺寸為S(μm)時，邊限部14之寬度M1較佳為設為0.2＜M1≦0.7S，更佳為設為0.2＜M1≦0.5S，進而較佳為設為0.2＜M1≦0.3S，以特定程度上確保抗反射層之表面之露出比例為宜。 於遮光部13，於邊限部14以外之區域，半透光膜5實質上被去除。 又，本發明之光罩並無特別之用途之限制。又，本發明之光罩亦可為於使用該光罩最終欲獲得之電子裝置之製造過程中能夠進行複數次蝕刻製程之所謂多階光罩，又，還可為有利於解像度或焦點深度之相位偏移光罩(半色調式相位偏移光罩等)。 又，本發明亦可作為顯示裝置之製造方法而實現，該顯示裝置之製造方法包括以下步驟：準備由上述第1實施形態或第2實施形態之製造方法而製造之光罩、或上述構成之光罩；及藉由使用曝光裝置將光罩之轉印用圖案曝光而將轉印用圖案轉印至被轉印體上。於該情形時，較佳為將作為LCD(Liquid Crystal Display，液晶顯示裝置)、或FPD(Flat Panel Display)為人所知之顯示裝置之面板基板等設為被轉印體。 本發明之光罩可較佳地用於使用作為LCD用、或FPD用而為人所知之曝光裝置之曝光中。作為該種曝光裝置，例如可使用具有如下等倍光學系統之投影曝光裝置，該等倍光學系統具備包含i光線、h光線、g光線之光源，且數值孔徑(NA)為0.08～0.15，同調因子(σ)為0.7～0.9左右。當然，本發明之光罩(多階光罩)亦能夠用作近接曝光用之光罩。 本發明之光罩尤其適宜作為包含液晶顯示裝置、有機EL顯示裝置等之顯示裝置之製造用之光罩。又，本發明之光罩能夠用於該等顯示裝置之多種部位(接觸孔、薄膜電晶體之S(Source，源極)/D(Drain，汲極)層、彩色濾光片之感光性間隔件用層等)之形成。又，本發明之光罩尤其能夠較佳地應用於具有包含與遮光部鄰接且被包圍之透光部之轉印用圖案者、或具有包含與半透光部鄰接且被包圍之透光部之轉印用圖案者。本發明之光罩進而能夠較佳地應用於具有包含與遮光部鄰接且被包圍之半透光部之轉印用圖案者。例如作為圖案具有之CD，可例示包含0.5～5 μm之部分者。 又，本發明之光罩亦可為於發揮本發明之作用效果之範圍內，除具有遮光膜3或半透光膜5之外還具有光學膜或功能膜之膜或膜圖案者。例如亦可於透明基板2之正面(轉印用圖案面)側、或背面側配置光學濾光膜、導電膜、絕緣膜、加強蝕刻性之膜等。The present inventors have made intensive studies in order to solve the above problems. In addition, in the course of this research, investigations and studies were conducted on the light reflectance of blank masks with different states of the film on the surface of the transparent substrate. FIG. 1 is a graph showing the results of the present inventors' investigation of light reflectance on a plurality of different blank masks. In FIG. 1, the reflectance (%) of light is taken on the vertical axis of the graph, and the wavelength (nm) of light is taken on the horizontal axis. In this survey, blank masks (1) to (5) described below were used as targets, and the surface of each blank mask was irradiated with light having a wavelength of 250 to 800 nm, and the reflectance was measured. (1) Blank mask with light-shielding film (2) Blank mask with light-shielding film + translucent film (etching time: 0 seconds) (3) (2) + etching (etching time: 8 seconds) (4) (2) + etching (etching time: 10 seconds) (5) (2) + etching (etching time: 12 seconds) Furthermore, the wavelength of the light of the exposure light used in the exposure step using a photomask is mainly 300 to 450 nm is mostly the case where i-rays, h-rays, and g-rays are used alone, or the wavelength range of 365 to 436 nm is set to include all these rays. Moreover, in this specification, the symbol "-" used when defining a certain range with two values has the meaning "above the lower limit and below the upper limit." The blank mask (1) above is formed by forming a light-shielding film containing chromium (Cr) on a transparent substrate by a sputtering method. The thickness of the light-shielding film is set to 1250 Å, and the material is set to CrOCN. Among them, an anti-reflection layer containing a Cr compound (composing CrO) having a thickness of 300 Å is formed on the surface layer portion of the light-shielding film. The blank mask of the above (2) is formed by forming a translucent film containing chromium (Cr) on the light-shielding film of the blank mask of the above (1) by sputtering. Specifically, the blank of the mask of (2) Blank photomasks are formed by laminating a translucent film containing CrON with a thickness of 300 Å. The translucent film provided in the blank photomask has a transmittance of 17% (the transmittance of the transparent substrate is 100%) for a representative wavelength of the exposed light (here, i-ray). The blank mask of the above (3) is obtained by etching the semi-transparent film provided in the blank mask of the above (2) with a moderate etching time of 8 seconds. The translucent film is etched using an etching solution for Cr. The blank mask of the above (4) is obtained by etching the semi-transmissive film provided in the blank mask of the above (2) for 2 seconds or 10 seconds longer than a moderate etching time. The blank mask of the above (5) is obtained by etching the semi-transparent film provided in the blank mask of the above (2) with a moderate etching time of 4 seconds, that is, 12 seconds. When observing the reflectance of the blank mask of (1) above, the reflection of light can be sufficiently suppressed in the wavelength range of 365 to 436 nm, which is the wavelength range of the above-exposed light. Specifically, the light reflectance of the wavelength region of the exposed light shows a lower value of less than 20%, and in particular, the reflectance of h-rays and g-rays is less than 15%. However, when the reflectance of the blank mask of the above (2) is observed, compared with the blank mask of the above (1), the reflectance of the surface increases in a wider wavelength region from 250 nm to more than 700 nm. Specifically, the reflectance of light in the wavelength region of the exposed light is shown to be 35% or more, and in particular, the reflectance to i-rays exceeds 40%. When observing the reflectance of the blank mask of the above (3), compared with the blank mask of the above (2), the reflectance of the surface is reduced in the wavelength region from 250 nm to 550 nm. Specifically, the reflectance of light in the wavelength region of the exposed light is less than 25%, and in particular, the reflectance of i-rays is less than 20%. When observing the reflectance of the blank mask of the above (4), compared with the blank mask of the above (3), the reflectance of the surface is increased in the entire wavelength range from 250 nm to 800 nm. Specifically, the reflectance of light in the wavelength region of the exposed light is 35% or less, but more than 30%. When observing the reflectance of the blank mask of the above (5), compared with the blank mask of the above (4), the reflectance of the surface is increased in the entire wavelength range from 250 nm to 800 nm. Specifically, the reflectance of light in the wavelength region of the exposed light shows 35% or more. The reason why the reflectance of the blank photomask of the above (2) is higher than that of the blank photomask of the above (1) is that the surface of the light-shielding film is covered by a semi-transmissive film, so the anti-reflection of the anti-reflection layer of the light-shielding film cannot be obtained basically. effect. The reason why the reflectance of the blank photomask of the above (3) is lower than that of the blank photomask of the above (2) is considered to be that a moderate etching time is used as the etching time of the semi-transparent film, the semi-transparent film is removed, and the exposure to the The effect of anti-reflection layer on the surface. The reason why the reflectance of the blank mask of the above (3) is not the same as that of the blank mask of the above (1) is that when the semi-transparent film is formed by a sputtering method or the like, the components of the semi-transparent film enter In the anti-reflection layer on the surface of the light-shielding film, after that, even if the translucent film is removed by etching, the state of the light-shielding film will not be exactly the same as that at the time of film formation. The reason why the reflectance of the blank photomask of the above (4) is higher than that of the blank photomask of the above (3) is considered to be that a longer period of moderate etching time (overetching time) is used as the etching time of the translucent film, so The surface of the light-shielding film is damaged, and the anti-reflection layer generating film on the surface layer portion is reduced. It is thought that the reason why the reflectance of the blank mask of the above (5) is higher than that of the blank mask of the above (4) is that the over-etching time of the semi-transparent film becomes longer, so the surface of the light-shielding film is more damaged. The film reduction of the anti-reflection layer is further advanced. Based on the above research results, specific embodiments of the present invention will be described below. <The manufacturing method of the mask of 1st Embodiment> The manufacturing method of the mask of 1st Embodiment of this invention is as follows. A method for manufacturing a photomask, the photomask having a light-transmitting portion, a semi-light-transmitting portion, and a light-shielding portion formed by patterning a light-shielding film and a semi-light-transmitting film formed on a transparent substrate, respectively. The pattern, the manufacturing method of the photomask is characterized by having: a light-shielding film patterning step, which is patterning the light-shielding film formed on the transparent substrate, to form a light-shielding film pattern; a semi-transparent film forming step, which includes Forming a translucent film on the transparent substrate of the light-shielding film pattern; the step of forming a light-transmitting portion is to partially remove the semi-transparent film, or the semi-transparent film and the light-shielding film to form the translucent portion; And a semi-transparent film removing step, which is to remove the semi-transparent film on the light-shielding film pattern; and in the semi-transparent film removing step, forming a resist pattern on a region that becomes the semi-transparent portion, the above-mentioned The resist pattern has a size obtained by adding a margin of a specific size to the light-shielding portion side at a portion of the semi-transmissive portion adjacent to the light-shielding portion. 2 and 3 are side cross-sectional views showing manufacturing steps of a photomask according to the first embodiment of the present invention. Furthermore, the A region in the figure is a region corresponding to a semi-transmissive portion, the B region is a region corresponding to a light-shielding portion, and the C region is a region corresponding to a light-transmitting portion. In other words, the A region is a formation region of a semi-transmissive portion, the B region is a formation region of a light-shielding portion, and the C region is a formation region of a light transmitting portion. (Blank mask preparation step) First, a blank mask 1 shown in FIG. 2 (a) is prepared. The blank photomask 1 is formed by forming a light-shielding film 3 on a transparent substrate 2 and further laminating a first resist film 4 on the light-shielding film 3. The transparent substrate 2 can be formed using a transparent material such as quartz glass. The size or thickness of the transparent substrate 2 is not limited. If the blank photomask 1 is for a manufacturer of a display device, a transparent substrate 2 having a main surface with a quadrangular shape having a side length of 300 to 2000 mm and a thickness of about 5 to 25 mm can be used. The light-shielding film 3 is provided with an anti-reflection layer (not shown) on the surface layer portion of the surface side (the side opposite to the transparent substrate 2). The light reflectance of the light shielding film 3 with respect to the representative wavelength of the exposed light is preferably less than 30%, more preferably 25% or less. Further preferably, the reflectance of the light-shielding film 3 to a representative wavelength (for example, i-ray) of the exposed light is 20% or less. In addition, it is preferable that the reflectance is 25% or less for all the i rays, h rays, and g rays. The reflectance of the light-shielding film 3 to the drawing light (wavelength 410 to 420 nm) used in the manufacturing step of the photomask is preferably less than 30%, and more preferably 25% or less. The light-shielding film 3 is a film containing Cr or a Cr compound, and has a film thickness of 1000 to 1500 Å, and an OD (optical density) of 3 or more. The thickness of the anti-reflection layer in the light-shielding film 3 is about 200 to 400 Å. For the method of forming the light-shielding film 3, a known method such as a sputtering method can be used. The first resist film 4 can be formed using an EB (electron beam) resist, a photoresist, or the like. Here, a photoresist is used as an example. The first resist film 4 can be formed by applying a photoresist to the light-shielding film 3. The photoresist may be either a positive type or a negative type, and a positive type photoresist is used here. The thickness of the first resist film 4 can be set to about 5000 to 10,000 Å. (Light-shielding film patterning step) The light-shielding film patterning step includes a first resist pattern forming step, a light-shielding film etching step, and a first resist peeling step. (First Resist Pattern Forming Step) In the first resist pattern forming step, as shown in FIG. 2 (b), the first resist pattern 4 is patterned to form a first resist pattern 4a. In this step, a pattern necessary for drawing (first drawing) the blank mask 1 using the drawing device. The energy line used for drawing can be an electron beam or a laser beam, and a laser beam (wavelength 410 to 420 nm) is used here. Since it is an anti-reflection layer with a light-shielding film, it can perform drawing with high CD accuracy. When the blank mask 1 is drawn and developed, a first resist pattern 4a is formed. (Light-shielding film etching step) In the light-shielding film etching step, as shown in FIG. 2 (c), the light-shielding film 3 is etched using the first resist pattern 4 a as a mask. Thereby, the light-shielding film 3 exposed in the opening part of the 1st resist pattern 4a is removed by etching. The etching of the light-shielding film 3 may be dry etching or wet etching. Since the light-shielding film 3 is made of a film containing Cr or a Cr compound in the blank photomask 1, wet etching using an etching solution for Cr can be applied. Thereby, the light-shielding film 3 on the transparent substrate 2 is patterned to form a light-shielding film pattern 3a. In addition, the wet etching may cause slight side etching of the film cross section, but this point is omitted in the drawings. When it is necessary to consider the influence of the minute side etch on the accuracy of the CD, it is preferable to perform data processing on the drawing data in advance when drawing using the drawing device described above. Specifically, the opening size of the first resist pattern 4a may be reduced so as to offset the reduction in the size of the light-shielding portion caused by the side etching. (First resist stripping step) In the first resist stripping step, as shown in FIG. 2 (d), the first resist pattern 4 a is peeled. Thereby, the transparent substrate 2 with the light-shielding film pattern 3a is obtained. (Semi-transparent film forming step) Next, as shown in FIG. 2 (e), a semi-transparent film 5 is formed on the transparent substrate 2 including the light-shielding film pattern 3a. The translucent film 5 is formed on the entire surface of the transparent substrate 2 by a specific film forming method. As the film-forming method of the semi-transparent film 5, a well-known method, such as a sputtering method, can be applied similarly to the said light-shielding film 3. Here, the translucent film 5 is formed using a material that can be etched with the same etchant as the light-shielding film 3. Specifically, similarly to the light-shielding film 3 described above, the semi-transmissive film 5 is formed of a film containing Cr or a Cr compound. The light transmittance of the translucent film 5 is preferably 3 to 60%, and more preferably 10 to 50% of the representative wavelength included in the light used for the exposure of the photomask 10 (see FIG. 6). The light transmittance described here is a value when the light transmittance of the transparent substrate 2 is 100%. The exposure light is based on a wide-wavelength light source including i-rays, h-rays, and g-rays, or a user is selectively used as a representative wavelength. The deviation of the light transmittance of the translucent film 5 in the wavelength region of i-ray to g-ray is preferably 0 to 8%. The deviation of the light transmittance of the translucent film 5 described here is the difference between Ti and Tg when the transmittance for i-ray is set to Ti (%) and the transmittance for g-ray is set to Tg (%) Absolute value. The phase shift amount of the exposed light of the translucent film 5 is preferably 90 degrees or less, and more preferably 5 to 60 degrees. The phase shift amount is also for the selected wavelength. Therefore, in order to satisfy the above conditions, it is preferable to adjust the film quality and film thickness of the semi-transmissive film 5. The film thickness of the translucent film 5 varies depending on the required light transmittance, but it can be set to a range of approximately 50 to 500 Å. (Second Resist Film Forming Step) Next, as shown in FIG. 2 (f), a second resist film 6 is laminated on the semi-transmissive film 5 and formed. The second resist film 6 can be formed by applying a photoresist in the same manner as the first resist film 4 described above. (Second resist pattern forming step) Next, as shown in FIG. 2 (g), the second resist pattern 6a is formed by patterning the second resist film 6. In this step, the blank mask 1 is patterned (the second pattern) with a drawing device in the same manner as the first pattern described above, and then the second resist film 6 is developed to form a second resist. Pattern 6a. The second resist pattern 6a is a resist pattern for forming a light transmitting portion of the photomask. The second resist pattern 6a covers a region A corresponding to the semi-transmissive portion and a region B corresponding to the light-shielding portion. On the other hand, the region C has an opening in the region C corresponding to the light-transmitting portion. The second resist pattern 6a is a resist pattern for continuously removing the light-shielding film 3 and the semi-light-transmitting film 5 in the light-transmitting portion (C area) adjacent to the light-shielding portion (B area). A resist pattern in which the translucent film 5 is etched and removed at a translucent portion (C area) adjacent to the translucent portion (A area). However, depending on the design of the transfer pattern, the second resist pattern 6a may be only the former or only the latter. In the case where the semi-transparent film 5 is etched in the following light-transmitting portion forming step, or a slight side etch caused by the semi-transparent film 5 and the light-shielding film 3 affects the accuracy of the CD, it can also be reduced in advance. In a method of reducing the size of the small opening corresponding to the size of the side etch, data processing is performed on the drawing data for the second drawing. (Transmitting Part Forming Step) Next, as shown in FIG. 3 (h), the semi-transparent film 5 exposed at the opening of the second resist pattern 6a is etched using the second resist pattern 6a as a mask. The light-shielding film 3 is thereby exposed. When the light-shielding film 3 is present, the light-shielding film 3 is etched after the semi-transmissive film 5 is etched. Thereby, in the region C corresponding to the light-transmitting portion, the semi-light-transmitting film 5 or the semi-light-transmitting film 5 and the light-shielding film 3 are partially removed. As a result, in the region C, the light-transmitting portion 11 is formed by exposing the surface of the transparent substrate 2 (see FIG. 6). Here, in the case where the light-shielding film 3 and the translucent film 5 are formed of a film containing Cr or a Cr compound, wet etching using an etching solution for Cr can be applied. In the case where the light-shielding film 3 and the translucent film 5 are each formed of a material that can be etched with the same etchant, the time required for etching the semi-transparent film 5 and the light-shielding film (including the anti-reflection layer) The ratio of the time OT required for the etching of 3 to HT: OT is preferably 1: 3 to 1:20. More preferably, the HT: OT is 1: 5 to 1:10. Also, the ratio of the average etching rate OR of the light-shielding film (including the anti-reflection layer) 3 to the etching rate HR of the translucent film 5 OR: HR may be 1. 5: 1 to 1: 5, preferably 1: 1 to 1: 5. (Second resist peeling step) Next, as shown in FIG. 3 (i), the second resist pattern 6a is peeled. At this stage, the entire region B corresponding to the light-shielding portion becomes a laminated structure of the light-shielding film 3 and the semi-transmissive film 5. (Semi-transparent film removing step) The semi-transparent film removing step includes a third resist film forming step, a third resist pattern forming step, and a semi-transparent film etching step. (Third Resist Film Forming Step) In the third resist film forming step, as shown in FIG. 3 (j), a third resist film 7 is laminated on the semi-transmissive film 5 and formed. The third resist film 7 can be formed by applying a photoresist in the same manner as the first resist film 4 and the second resist film 6 described above. (Third Resist Pattern Forming Step) In the third resist pattern forming step, as shown in FIG. 3 (k), the third resist film 7 is patterned so as to be in a region that becomes a translucent portion (A Area) to form a third resist pattern 7a. In this step, the blank mask 1 is subjected to the development of the third resist film 7 after the required pattern is drawn (the third drawing) using the drawing device in the same manner as the first drawing and the second drawing described above. A third resist pattern 7a is formed. The third resist pattern 7a is a resist pattern for removing the semi-transmissive film 5 covering the light-shielding film 3 in a region B corresponding to the light-shielding portion. The third resist pattern 7a covers a region A corresponding to the semi-transmissive portion, and has an opening in a region B corresponding to the light-shielding portion. However, it is necessary to take into consideration the case where an alignment shift occurs between the second resist pattern 6a and the third resist pattern 7a, and process the drawing data applicable to the third drawing with a specific margin. Specifically, when the above-mentioned misalignment occurs, the semi-transparent area is surely covered with the edge portion of the third resist pattern 7a at the boundary between the semi-transparent portion (A area) and the light-shielding portion (B area). In the form of the optical film 5, the size of the third resist pattern 7a is set as follows. In other words, the third resist pattern 7a has a size in a portion where the semi-transmissive portion and the light-shielding portion are adjacent to each other with a specific size margin added to the light-shielding portion side (B area side). The size of the margin of the third resist pattern 7a is represented by M1 (μm) in FIG. 3 (k). Here, the dimension M1 of the margin is a dimension of the width in the arrangement direction of the adjacent translucent portions (A region) and the light shielding portion (B region). If it is assumed that an alignment shift may occur during the manufacturing steps of the photomask, the size of the margin M1 (μm) is preferably 0. 2 <M1, more preferably 0. 5 ≦ M1. In addition, if only the alignment offset is considered, the size M1 (μm) of the margin is smaller than the direction of the same width as the margin in the light shielding portion (B area) adjacent to the translucent portion (A area). The size S (μm) of the arrangement direction of the adjacent semi-light-transmitting portion (A area) and the light-shielding portion (B area) may be sufficient. However, if the size M1 of the margin is set too large, the translucent film 5 will cover most of the B area corresponding to the light-shielding portion, so the risk of stray light during exposure increases. Therefore, in fact, when the area of more than 70% of the size S of the light-shielding portion 13 is covered by the semi-light-transmitting film 5, when the semi-light-transmitting film 5 on the light-shielding film 3 is removed in the semi-transparent film removing step described below, The area of the light-shielding film 3 exposed at the light-shielding portion is too small, and the anti-reflection effect tends to be insufficient. Therefore, with respect to the size S (μm) of the light-shielding portion adjacent to the translucent portion, the size of the margin M1 (μm) is preferably set to M1 ≦ 0. 7S, more preferably set to M1 ≦ 0. 5S, further preferably set to M1 ≦ 0. 3S, it is appropriate to ensure the exposure ratio of the surface of the anti-reflection layer to a certain degree. It should be noted that the size of the edge here refers to the size of one edge of the semi-transmissive portion adjacent to the light-shielding portion. Therefore, if the semi-transmissive portions on both sides are sandwiched by the light-shielding portion, the margins are set on the edges of the two sides by the above-mentioned size M1, respectively. In addition, since the semi-transparent portion (A region) and the portion adjacent to the transparent portion (C region) are covered with the third resist pattern 7a, no data processing is required. (Semi-transparent film etching step) In the semi-transparent film etching step, as shown in FIG. 3 (l), the third resist pattern 7a is used as a mask to expose the openings of the third resist pattern 7a. The translucent film 5 is etched. Thereby, the semi-transparent film 5 on the light-shielding film pattern 3a is removed in the area B corresponding to the light-shielding portion by etching. In addition, the surface of the light-shielding film 3, that is, the surface of the anti-reflection layer is exposed after the semi-transparent film 5 is removed. In the case where the semi-transparent film 5 is etched as described above, the light-shielding film 3 exists under the semi-transparent film 5 that should be removed by etching, so the detection of the end point of the etching becomes important. Especially when the semi-transmissive film 5 and the light-shielding film 3 are formed of a material capable of being etched with the same etchant, the semi-transmissive film 5 is excessively etched, so that there is resistance in the surface layer portion of the light-shielding film 3. The risk of damage to the reflective layer makes the detection of the end of the etching more important. This will be described below. (Third resist peeling step) Next, as shown in FIG. 3 (m), the third resist pattern 7a is peeled. Through the above steps, the photomask 10 shown in FIG. 6 is completed. In the photomask 10, the exposed area of the surface of the light-shielding film 3 (the surface of the anti-reflection layer) is increased by removing the light-transmitting film 5 on the light-shielding film pattern 3a in the above-mentioned semi-light-transmitting film removing step. Therefore, the risk of stray light in the exposure step using the mask 10 can be reduced. <The manufacturing method of the mask of 2nd Embodiment> The manufacturing method of the mask of 2nd Embodiment of this invention is as follows. A method for manufacturing a photomask, the photomask having a light-transmitting portion, a semi-light-transmitting portion, and a light-shielding portion formed by patterning a light-shielding film and a semi-light-transmitting film formed on a transparent substrate, respectively. The pattern, the manufacturing method of the photomask is characterized by having: a light-shielding film patterning step, which is patterning the light-shielding film formed on the transparent substrate, to form a light-shielding film pattern; a semi-transparent film forming step, which includes Forming a translucent film on the transparent substrate of the light-shielding film pattern; and forming a light-transmitting portion by patterning the semi-transparent film to form the light-transmitting portion, and forming the light-transmitting portion on the light-shielding film pattern The translucent film is removed; and in the step of forming the translucent portion, a resist pattern is formed in a region that becomes the translucent portion, and the resist pattern is formed at a portion of the translucent portion adjacent to the light-shielding portion. A size obtained by adding a margin of a specific size to the light shielding portion side. 4 and 5 are side sectional views showing manufacturing steps of a photomask according to a second embodiment of the present invention. It should be noted that in the second embodiment, portions corresponding to those in the first embodiment described above are denoted by the same reference numerals. (Blank mask preparation step) First, a blank mask 1 shown in FIG. 4 (a) is prepared. As in the first embodiment, the blank mask 1 is formed by forming a light-shielding film 3 on a transparent substrate 2 and further laminating a first resist film 4 on the light-shielding film 3. (Light-shielding film patterning step) The light-shielding film patterning step includes a first resist pattern forming step, a light-shielding film etching step, and a first resist peeling step. (First resist pattern forming step) In the first resist pattern forming step, as shown in FIG. 4 (b), the first resist pattern 4 a is formed by patterning the first resist film 4. In this step, a pattern required for drawing (first drawing) the blank mask 1 using the drawing device. With the anti-reflection layer having the light-shielding film 3, it is possible to perform drawing with high CD accuracy. The first resist pattern 4a is formed on the light-shielding film 3 so as to cover a region B corresponding to the light-shielding portion. (Light-shielding film etching step) In the light-shielding film etching step, as shown in FIG. 4 (c), the light-shielding film 3 is etched by using the first resist pattern 4a as a mask to form a light-shielding film pattern 3a. Thereby, the light-shielding film 3 on the transparent substrate 2 is patterned to form a light-shielding film pattern 3a. In this step, wet etching is used in the same manner as in the first embodiment. In addition, if necessary, the side erosion amount can be estimated in advance to perform data processing on the drawing data to compensate the size of the light-shielding portion. This point is also the same as the manufacturing method of the first embodiment. Furthermore, in the second embodiment, the etching of the light-shielding film 3 is only this step, so the position and size of the light-shielding portion are defined here. (First resist stripping step) In the first resist stripping step, as shown in FIG. 4 (d), the first resist pattern 4 a is stripped. Thereby, the transparent substrate 2 with the light-shielding film pattern 3a is obtained. (Semi-transparent film formation step) Next, as shown in FIG. 4 (e), a semi-transparent film 5 is formed on the transparent substrate 2 including the light-shielding film pattern 3a. The translucent film 5 is formed on the entire surface of the transparent substrate 2 by a specific film forming method. As the film-forming method of the semi-transparent film 5, a well-known method, such as a sputtering method, can be applied similarly to the said light-shielding film 3. The materials, characteristics, and the like of the translucent film 5 are the same as those of the first embodiment. (Transmitting Part Forming Step) The transmitting part forming step includes a second resist film forming step, a second resist pattern forming step, and a semi-transparent film etching step. (Second Resist Film Forming Step) In the second resist film forming step, as shown in FIG. 5 (f), a second resist film 6 is laminated on the semi-transmissive film 5 and formed. The second resist film 6 can be formed by applying a photoresist in the same manner as the first resist film 4 described above. (Second resist pattern forming step) In the second resist pattern forming step, as shown in FIG. 5 (g), the second resist film 6 is patterned to a region (A) that becomes a translucent portion. (Region) to form a second resist pattern 6a. In this step, the blank mask 1 is patterned (the second pattern) with a drawing device in the same manner as the first pattern described above, and then the second resist film 6 is developed to form a second resist. Pattern 6a. The second resist pattern 6a covers a region A corresponding to the semi-transmissive portion, and has an opening in a region C corresponding to the translucent portion, and a region B corresponding to the light-shielding portion is based on removing the semi-light transmission on the light-shielding film 3 The purpose of the film 5 is to have an opening. However, it is necessary to consider the case where an alignment shift occurs between the first resist pattern 3a and the second resist pattern 6a, and perform processing on the drawing data applied to the second drawing with a specific margin. Specifically, when the above-mentioned misalignment occurs, the semi-transparent area is surely covered by the edge portion of the second resist pattern 6a at the boundary between the semi-transparent portion (A area) and the light-shielding portion (B area). In the form of the optical film 5, the size of the second resist pattern 6a is set as follows. That is, at the boundary between the semi-transmissive portion and the light-shielding portion, the second resist pattern 6a has a size obtained by adding a margin of a specific size to the light-shielding portion side (B area side). The size of the margin of the second resist pattern 6a is shown by M1 (μm) in FIG. 5 (g). The margin size M1 can be set in the same manner as in the first embodiment. On the other hand, in the portion where the semi-transmissive portion is adjacent to the translucent portion, it is not necessary to consider the margin formed based on the alignment offset, as long as an appropriately-sized opening is provided in a region corresponding to the translucent portion. However, in the case where a small side etch accompanying the etching of the translucent film 5 affects the accuracy of the CD, the drawing data can also be drawn in advance so as to reduce a small opening equivalent to the size of the side etch Implement data processing. (Semi-transparent film etching step) In the semi-transparent film etching step, as shown in FIG. 5 (h), the second resist pattern 6a is used as a mask, and the second resist pattern 6a is exposed to the opening portion of the second resist pattern 6a. The translucent film 5 is etched. Thereby, in the area C, the light-transmitting portion 11 is formed by exposing the surface of the transparent substrate 2 (see FIG. 6). In the region B corresponding to the light-shielding portion, the translucent film 5 on the light-shielding film pattern 3a is removed by etching. (Second resist peeling step) Next, as shown in FIG. 5 (i), the second resist pattern 6a is peeled. Through the above steps, the photomask 10 shown in FIG. 6 is completed. In the photomask 10, the exposed area of the surface of the light-shielding film 3 (the surface of the anti-reflection layer) is increased by removing the semi-light-transmitting film 5 on the light-shielding film pattern 3a by the above-mentioned light-transmitting portion forming step. Therefore, the risk of stray light in the exposure step using the mask 10 can be reduced. When the photomask 10 is manufactured by applying the manufacturing method of the second embodiment of the present invention, it has a pattern for transfer including a light-transmitting portion, a semi-light-transmitting portion, and a light-shielding portion, and has a light-transmitting portion on the light-shielding portion The step of removing the film, but the number of times of drawing (that is, the number of lithographic steps) can also be set to only two, which is very efficient. In addition, if this manufacturing method is adopted, the design of the pattern is not limited. In the first resist pattern forming step, the position and size of the light-shielding portion are substantially defined. Therefore, even if there is a risk of misalignment in the subsequent steps, the size and the like of the light shielding portion are not affected by it. Therefore, when the area of the light shielding portion will affect the operation performance of the device to be finally obtained, it is advantageous to adopt the manufacturing method. In the manufacturing method according to the second embodiment of the present invention, the etching using the second resist pattern 6a as a mask is performed only on the translucent film 5. Therefore, compared with the case where the light-shielding film 3 is etched after the translucent film 5, the etching time becomes shorter. Therefore, it is difficult to perform side etching during etching, and the dimensional accuracy of the light shielding portion can be maintained relatively high. That is, in this manufacturing method, a single film is etched in any one of the etching steps, and there is no step of continuously etching and removing a laminate of two or more films. Therefore, it is possible to finely control the time required for etching without causing CD disorder caused by over-etching. <Structure of Mask of Embodiment> Fig. 6 shows a structure of a mask of an embodiment of the present invention. (A) is a plan view, and (b) is a cross-sectional view taken along the line X-X. The illustrated photomask 10 has a transfer pattern including a light-transmitting portion 11, a semi-light-transmitting portion 12, and a light-shielding portion 13. This photomask 10 can also be manufactured by any one of the manufacturing method of the said 1st Embodiment, or the manufacturing method of the said 2nd Embodiment. The light-transmitting portion 11, the semi-light-transmitting portion 12, and the light-shielding portion 13 are formed by patterning the light-shielding film 3 and the semi-light-transmitting film 5 formed on the transparent substrate 2, respectively. The light-transmitting portion 11 is an exposed portion of the surface of the transparent substrate 2. The translucent portion 12 is a portion where the translucent film 5 is formed on the transparent substrate 2. A light-shielding film 3 is not formed on the semi-transmissive portion 12. The light-shielding portion 13 is a portion where the light-shielding film 3 is formed on the transparent substrate 2 and along the edge adjacent to the semi-light-transmitting portion 12, the edge portion 14 having the light-transmitting film 5 laminated on the light-shielding film 3. That is, in the light-shielding portion 13 other than the edge portion 14, the semi-transmissive film 5 is removed, and the light-shielding film 3 is exposed. If it is assumed that an alignment shift may occur during the above manufacturing steps, the width M1 (μm) of the margin portion 14 is preferably 0. 2 <M1, more preferably 0. 5 ≦ M1. In addition, if only the alignment offset is taken into consideration, the width M1 (μm) of the margin portion 14 may be smaller than the size S (μm) of the light shielding portion 13 adjacent to the semi-transmissive portion 12. It should be noted that the dimension S is a dimension in the arrangement direction of the semi-transmissive portion 12 and the light-shielding portion 13. However, if the margin portion 14 has an excessively large width, most of the light shielding portion 13 will be covered by the semi-transmissive film 5, so the risk of stray light during exposure increases. That is, when the area of more than 70% of the size S (μm) of the light-shielding portion 13 is covered by the translucent film 5, when the translucent film 5 on the light-shielding film 3 is removed in the translucent film removal step, There is a tendency that the size (area) of the light-shielding film 3 exposed on the light-shielding portion 13 is too small to sufficiently obtain an anti-reflection effect. Therefore, with respect to the size S (μm) of the light shielding portion 13 adjacent to the translucent portion 12, the width M1 (μm) of the margin portion 14 is preferably set to M1 ≦ 0. 7S, more preferably set to M1 ≦ 0. 5S, further preferably set to M1 ≦ 0. 3S, it is appropriate to ensure the exposure ratio of the surface of the anti-reflection layer to a certain degree. It should be noted that the width M1 of the marginal portion 14 here refers to the width of one edge of the semi-transmissive portion 12 adjacent to the light-shielding portion 13. Therefore, if the semi-light-transmitting portions 12 on both sides are sandwiched by the light-shielding portion 13, the edge portions on both sides have the edge portions 14 with the width M1 described above. For the representative wavelength included in the exposed light used for the exposure of the mask 10, the light transmittance of the semi-transmissive portion 12 can be preferably set to 3 to 60%. As the exposure light, a wide-wavelength light source including i-rays, h-rays, and g-rays may be used, or any one of them may be selectively used as a representative wavelength. For example, when the mask 10 is used as a multi-step mask, the transmittance of the semi-transmissive portion 12 to the representative wavelength of the exposed light is more preferably 10 to 50%. The light transmittance described here is a value when the light transmittance of the transparent substrate 2 is 100%. The deviation of the light transmittance of the semi-transmissive portion 12 in the wavelength region of i rays to g rays is preferably 0 to 8%. The deviation of the light transmittance of the semi-transmissive portion 12 described here is the absolute value of the difference between Ti and Tg when the transmittance for i-ray is set to Ti and the transmittance for g-ray is set to Tg. The phase shift amount of the exposed light included in the translucent portion 12 is preferably 90 degrees or less, and more preferably 5 to 60 degrees. The phase shift amount is also for the selected wavelength. Therefore, in order to satisfy the above conditions, it is preferable to adjust the film quality and film thickness of the semi-transmissive film 5. The film thickness of the translucent film 5 varies depending on the required light transmittance, but it can be set to a range of approximately 50 to 500 Å. The mask of the present invention can also be used as a phase shift mask. In this case, it is preferable to set the phase shift amount of the exposed light of the semi-transmissive portion 12 to 150 to 210 degrees. Thereby, the semi-transmissive portion 12 reverses the phase of the exposed light, and thus can contribute to the improvement of the resolvability using the interference of light or the increase of the depth of focus. In this case, the transmittance of the semi-transmissive portion 12 to the representative wavelength may be preferably 3 to 30%, and more preferably 5 to 20%. In the photomask of the present invention, the material of the translucent film 5 may be, for example, a film containing Cr, Ta, Zr, Si, Mo, etc., and may be obtained from these compounds (oxides, nitrides, carbides, Nitrogen oxide, nitrogen carbide, nitrogen carbon oxide, etc.) are selected as appropriate. Particularly, a compound of Cr can be preferably used. As other materials of the translucent film 5, a compound of Si (such as SiON), a transition metal silicide (such as MoSi), or a compound thereof can be used. Examples of the transition metal silicide compound include oxides, nitrides, oxynitrides, and oxynitrides. MoSi oxides, nitrides, oxynitrides, and oxynitrides are preferably exemplified. In the photomask of the present invention, the light-shielding portion 13 forms a light-shielding film 3 on the transparent substrate 2, and has a boundary where the light-shielding film 3 is laminated on the light-shielding film 3 along the edge adjacent to the light-transmitting portion 12. Department 14. Further, the light-shielding portion 13 other than the edge portion 14 is exposed on the surface of the light-shielding film 3, that is, the surface reflection portion thereof. The reason is that the semi-transmissive film 5 existing on the surface of the light-shielding film 3 in the light-shielding section 13 other than the marginal section 14 is substantially removed. In the photomask of the present invention, the light-shielding film (including the anti-reflection layer) 3 and the translucent film 5 can be etched with the same etchant. In this case, the etching end time when the translucent film 5 on the light-shielding film 3 is etched is deviated from the substrate surface. The in-plane deviation causes excessive etching of the light-shielding film 3, and an anti-reflection layer may be generated. The surface side is slightly damaged. In this way, even when micro-etching occurs on the surface of the light-shielding film 3 and a part of the surface of the anti-reflection layer is damaged, the light reflectance of the representative wavelength of the exposed light on the surface of the light-shielding film 3 is preferably not. Up to 30%. More preferably, the reflectance of the surface of the light-shielding film 3 is less than 30% for the entire wavelength of the exposed light. In this case, the effect of the present invention can also be obtained. On the other hand, in order to suppress the excessive etching as described above, the etching rate of the anti-reflection layer in the surface layer portion of the light-shielding film 3 is preferably smaller than that of the semi-transmissive film 5. For example, when the etching rate of the anti-reflection layer is set to RR and the etching rate of the translucent film 5 is set to HR, it is preferable that RR <HR. It is preferably 1. 5RR <HR. The material of the light-shielding film 3 can be, for example, a film containing Cr, Ta, Zr, Si, Mo, and the like, and can be obtained from these monomers or compounds (oxides, nitrides, carbides, oxynitrides, nitrogen carbides). , Nitrogen carbon oxide, etc.). Particularly, Cr or a compound of Cr can be preferably used. As another material of the light-shielding film 3, a transition metal silicide (such as MoSi) or a compound thereof can be used. Examples of the transition metal silicide compound include oxides, nitrides, oxynitrides, and oxynitrides. MoSi oxides, nitrides, oxynitrides, and oxynitrides are preferably exemplified. The light-shielding film 3 preferably has an anti-reflection layer on its surface side (the side opposite to the transparent substrate 2). In this case, for example, if the thickness of the entire light-shielding film 3 including the anti-reflection layer is set to 1000 to 2000 Å, and more preferably 1100 to 1800 Å, the anti-reflection layer may occupy 100% of the surface layer portion of the light-shielding film 3. ~ 500 Å, more preferably 200 to 400 占. The anti-reflection layer can be formed by changing a part of the three components of the light-shielding film (for example, additional components such as oxygen, nitrogen, and carbon) on the surface layer. The light-shielding film 3 and the translucent film 5 may be formed of a material that is resistant to each other's etchant (that is, has an etching selectivity), but it is not necessary to be so restricted. That is, the light-shielding film 3 and the translucent film 5 can be formed using a material capable of being etched by the same etchant, which is an advantage of the present invention. In this case, it is preferable that both the light-shielding film 3 and the translucent film 5 contain the same material. "Containing the same material" refers to a case where the same metal is contained, or both of them contain Si. For example, the "containing the same material" is a case where the light-shielding film 3 and the translucent film 5 are both films containing Cr, or both are metal silicides MXSiY (X and Y are integers) or a compound thereof containing the same metal M. As a preferable example, a case where the light-shielding film (including the anti-reflection layer) 3 and the semi-transmissive film 5 are both compounds containing Cr can be cited. When the light-shielding film 3 and the translucent film 5 can be etched by the same etchant, it is preferable that the light-shielding film 3 and the translucent film 5 are different from each other with respect to the time required for the etching of the same etchant. Specifically, it is preferable that the time required for etching the translucent film 5 is shorter than the time required for etching the light-shielding film 3. This is particularly advantageous when the manufacturing method of the second embodiment is applied. As described above, the comparison between the time HT required for the etching of the translucent film 5 and the time OT required for the etching of the light-shielding film (including the anti-reflection layer) 3 is preferably HT: OT from 1: 3 to 1:20. More preferably, the HT: OT is 1: 5 to 1:10. The time required for etching refers to the time required from the beginning of the etching of the film to be etched until the film disappears. The time required for etching can be adjusted according to the etching rate and film thickness. For example, when the film thickness of the light-shielding film 3 is larger than the film thickness of the semi-light-transmitting film 5, the time required for etching the semi-light-transmitting film 5 is relatively short. The etching rate refers to the amount of etching per unit time when etching is performed by an etchant. The etching rate is determined according to the composition or film quality of the raw materials constituting each film. In the present embodiment, wet etching is used, so that an equivalent to an etchant becomes an etchant. In this case, for the same etching solution, the etching rates of the light-shielding film 3 and the translucent film 5 may be the same or different. For example, even if the light-shielding film 3 and the semi-transmissive film 5 both contain a common metal, there may be a difference in the etching rate of the common etching solution due to different components (such as oxygen, nitrogen, and carbon). The ratio of the average etching rate OR of the light-shielding film (including the anti-reflection layer) 3 to the etching rate HR of the translucent film 5 OR: HR may be 1. 5: 1 to 1: 5, preferably 1: 1 to 1: 5. More preferably, the etching rate HR of the translucent film 5 is equal to or more than the average etching rate OR of the light-shielding film (including the anti-reflection layer) 3. In this case, it is easy to adjust the ratio of the time required for the etching (HT: OT). The average etching rate of the light-shielding film 3 is an average etching rate of the light-shielding film 3 including an anti-reflection layer. The light-shielding film 3 is a light-shielding film having a certain light-shielding property for the exposed light, and its film thickness is preferably larger than the film thickness of the semi-transparent film 5. Specifically, the ratio of the film thickness HA of the translucent film 5 to the film thickness OA of the light-shielding film 3 HA: OA is preferably 1: 2. 5 to 1:20, more preferably 1:10 to 1:20. In this range, the transmittance of the translucent film 5 can be adjusted to a desired value. Also, the OD (optical density) of the state where the light-shielding film 3 and the translucent film 5 are laminated is 2. 5 to 7. 5, preferably 3. 0 to 5. The OD of the single film 3 is preferably 3. 0 to 5. In the photomask of the present invention, the reflectance of the light-shielding portion (except the edge portion 14) 13 to the representative wavelength of the exposed light is preferably less than 30%, more preferably 25% or less. Furthermore, it is preferable that the reflectance of the light-shielding portion 13 to the representative wavelength of the exposed light (for example, i-ray) is 20% or less, or that the i-rays, h-rays, and g-rays are all 25% or less. The reflectance of the light-shielding portion 13 with respect to the drawing light (wavelength 410 to 420 nm) used in the manufacturing step of the photomask is preferably less than 30%, and more preferably 25% or less. In addition, the effect of the present invention is significant when the light reflectance of the exposed light in a state where the light shielding film 3 and the translucent film 5 are laminated is more than 35%, and it is more significant when it is 40% or more. In the photomask of the present invention, the light-shielding portion 13 has a border portion 14 with a semi-light-transmitting film 5 laminated on the light-shielding film 3 along an edge adjacent to the light-transmitting portion 12. When the width of the marginal portion 14 is set to M1 (μm), it is preferably 0. 2 <M1. Also, the size of the light shielding portion 13 adjacent to the semi-transmissive portion 12 is S (μm), and the width M1 of the margin portion 14 is preferably set to 0. 2 <M1 ≦ 0. 7S, more preferably set to 0. 2 <M1 ≦ 0. 5S, further preferably set to 0. 2 <M1 ≦ 0. 3S, it is appropriate to ensure the exposure ratio of the surface of the anti-reflection layer to a certain degree. In the light shielding portion 13, in a region other than the edge portion 14, the semi-transmissive film 5 is substantially removed. In addition, the mask of the present invention is not limited to a particular application. In addition, the photomask of the present invention may also be a so-called multi-step photomask capable of performing multiple etching processes in the manufacturing process of the electronic device to be finally obtained using the photomask, and may also be a film that is beneficial to resolution or depth of focus. Phase shift mask (half-tone phase shift mask, etc.). In addition, the present invention can also be implemented as a method for manufacturing a display device. The method for manufacturing the display device includes the steps of preparing a photomask manufactured by the manufacturing method of the first embodiment or the second embodiment, or a structure of the above-mentioned structure. A photomask; and exposing the pattern for transfer of the photomask to an object to be transferred by exposing the pattern for transfer of the photomask using an exposure device. In this case, it is preferable to use a liquid crystal display (LCD) or a panel substrate of a display device known as FPD (Flat Panel Display) as the transfer target. The photomask of the present invention can be preferably used for exposure using an exposure device known as an LCD or an FPD. As this kind of exposure device, for example, a projection exposure device having an optical system having the following multiples, which includes a light source including i rays, h rays, and g rays, and a numerical aperture (NA) of 0. 08 ～ 0. 15, the coherence factor (σ) is 0. 7 to 0. 9 or so. Of course, the mask (multi-step mask) of the present invention can also be used as a mask for close exposure. The mask of the present invention is particularly suitable as a mask for manufacturing a display device including a liquid crystal display device, an organic EL display device, and the like. In addition, the photomask of the present invention can be used in various parts of such display devices (contact holes, S (Source) / Drain (Drain) layers of thin film transistors), and photosensitive intervals of color filters. Layer, etc.). In addition, the photomask of the present invention is particularly preferably applicable to a person having a transfer pattern including a light-transmitting portion adjacent to and surrounded by a light-shielding portion, or having a light-transmitting portion including and adjacent to a semi-light-transmitting portion. Those who transfer patterns. The photomask of the present invention can be further preferably applied to a person having a transfer pattern including a translucent portion adjacent to and surrounded by the light-shielding portion. For example, a CD with a pattern may include 0. 5 to 5 μm. In addition, the photomask of the present invention may be a film or a film pattern having an optical film or a functional film in addition to the light-shielding film 3 or the semi-transmissive film 5 within the range of exerting the effects of the present invention. For example, an optical filter film, a conductive film, an insulating film, a film for enhancing the etching property, and the like may be disposed on the front side (pattern surface for transfer) or the back side of the transparent substrate 2.

1‧‧‧空白光罩1‧‧‧ blank mask

2‧‧‧透明基板2‧‧‧ transparent substrate

3‧‧‧遮光膜3‧‧‧ light-shielding film

3a‧‧‧遮光膜圖案3a‧‧‧light-shielding film pattern

4‧‧‧第1抗蝕膜4‧‧‧ 1st resist film

4a‧‧‧第1抗蝕圖案4a‧‧‧1st resist pattern

5‧‧‧半透光膜5‧‧‧ translucent film

6‧‧‧第2抗蝕膜6‧‧‧Second resist film

6a‧‧‧第2抗蝕圖案6a‧‧‧Second resist pattern

7‧‧‧第3抗蝕膜7‧‧‧ 3rd resist film

7a‧‧‧第3抗蝕圖案7a‧‧‧3rd resist pattern

10‧‧‧光罩10‧‧‧Mask

11‧‧‧透光部11‧‧‧Light Transmission Department

12‧‧‧半透光部12‧‧‧ translucent part

13‧‧‧遮光部13‧‧‧Shading Department

14‧‧‧邊限部14‧‧‧Boundary Department

100‧‧‧空白光罩100‧‧‧ blank mask

101‧‧‧透明基板101‧‧‧ transparent substrate

102‧‧‧遮光膜102‧‧‧Light-shielding film

102a‧‧‧遮光膜圖案102a‧‧‧Light-shielding film pattern

102b‧‧‧遮光膜圖案102b‧‧‧Light-shielding film pattern

103‧‧‧抗蝕膜103‧‧‧ Resist film

103a‧‧‧抗蝕圖案103a‧‧‧ resist pattern

104‧‧‧半透光膜104‧‧‧ translucent film

104a‧‧‧半透光膜圖案104a‧‧‧ translucent film pattern

105‧‧‧抗蝕膜105‧‧‧resist film

105a‧‧‧抗蝕圖案105a‧‧‧ resist pattern

110‧‧‧多階光罩110‧‧‧Multi-step mask

200‧‧‧光罩200‧‧‧Mask

201‧‧‧透明基板201‧‧‧ transparent substrate

202‧‧‧遮光膜202‧‧‧Light-shielding film

203‧‧‧空白光罩203‧‧‧ blank mask

204‧‧‧抗蝕膜204‧‧‧resist film

205‧‧‧能量線205‧‧‧energy line

206‧‧‧抗蝕圖案206‧‧‧ resist pattern

207‧‧‧遮光膜圖案207‧‧‧light-shielding film pattern

208‧‧‧附遮光膜圖案之基板208‧‧‧ Substrate with light-shielding film pattern

209‧‧‧半透明膜209‧‧‧Translucent film

210‧‧‧抗蝕膜210‧‧‧ resist film

211‧‧‧能量線211‧‧‧energy line

212‧‧‧抗蝕圖案212‧‧‧ resist pattern

213‧‧‧半透明膜213‧‧‧Translucent film

214‧‧‧遮光膜214‧‧‧Light-shielding film

A‧‧‧區域A‧‧‧Area

B‧‧‧區域B‧‧‧ area

C‧‧‧區域C‧‧‧Area

M1‧‧‧邊限部之尺寸M1‧‧‧Dimension of margin

S‧‧‧與半透光部鄰接之遮光部之尺寸S‧‧‧ The size of the light-shielding part adjacent to the translucent part

圖1係以曲線圖形式表示關於表面膜不同之複數個空白光罩之光反射率之圖。 圖2(a)～(g)係表示本發明之第1實施形態之光罩之製造步驟之側剖視圖(其一)。 圖3(h)～(m)係表示本發明之第1實施形態之光罩之製造步驟之側剖視圖(其二)。 圖4(a)～(e)係表示本發明之第2實施形態之光罩之製造步驟之側剖視圖(其一)。 圖5(f)～(i)係表示本發明之第2實施形態之光罩之製造步驟之側剖視圖(其二)。 圖6係表示本發明之實施形態之光罩之構成者，(a)係俯視圖，(b)係(a)之X-X剖視圖。 圖7(a)～(e)係表示第1先前技術之光罩之製造步驟之側剖視圖(其一)。 圖8(f)～(i)係表示第1先前技術之光罩之製造步驟之側剖視圖(其二)。 圖9(a)～(g)係表示第2先前技術之光罩之製造步驟之側剖視圖(其一)。 圖10(h)～(l)係表示第2先前技術之光罩之製造步驟之側剖視圖(其二)。FIG. 1 is a graph showing the light reflectance of a plurality of blank photomasks with different surface films in the form of a graph. Figs. 2 (a) to (g) are side cross-sectional views (part 1) showing manufacturing steps of the photomask according to the first embodiment of the present invention. 3 (h) to (m) are side cross-sectional views (No. 2) showing manufacturing steps of the photomask according to the first embodiment of the present invention. 4 (a) to 4 (e) are side cross-sectional views (part 1) showing manufacturing steps of a photomask according to a second embodiment of the present invention. 5 (f) to (i) are side cross-sectional views (No. 2) showing manufacturing steps of a photomask according to a second embodiment of the present invention. Fig. 6 is a diagram showing a constitution of a mask according to an embodiment of the present invention, (a) is a plan view, and (b) is a cross-sectional view taken along the line X-X of (a). 7 (a) to 7 (e) are side cross-sectional views (part 1) showing manufacturing steps of the first prior art photomask. 8 (f) to (i) are side sectional views (No. 2) showing manufacturing steps of the first prior art photomask. 9 (a) to (g) are side cross-sectional views (part 1) showing manufacturing steps of a second prior art photomask. 10 (h) to (l) are side sectional views (No. 2) showing manufacturing steps of the second prior art photomask.

Claims (18)

一種光罩之製造方法，該光罩具有藉由將形成於透明基板上之遮光膜及半透光膜分別圖案化而形成的具備透光部、半透光部、及遮光部的轉印用圖案，該光罩之製造方法之特徵在於具有：遮光膜圖案化步驟，其係將形成於上述透明基板上之遮光膜圖案化，而形成遮光膜圖案；半透光膜形成步驟，其係於包含上述遮光膜圖案之上述透明基板上形成半透光膜；透光部形成步驟，其係將上述半透光膜、或上述半透光膜與上述遮光膜局部地去除，而形成上述透光部；及半透光膜去除步驟，其係將上述遮光膜圖案上之上述半透光膜去除；且上述遮光膜於表面側具有抗反射層，於上述半透光膜去除步驟中，於成為上述半透光部之區域形成抗蝕圖案，上述抗蝕圖案於上述半透光部與上述遮光部鄰接之部分，具有向上述遮光部側附加特定尺寸之邊限而成之尺寸，且將上述邊限之尺寸設為M1(μm)、將與上述半透光部相鄰之上述遮光部之尺寸設為S(μm)時，滿足M1≦0.5S。A method for manufacturing a photomask, the photomask having a light-transmitting portion, a semi-light-transmitting portion, and a light-shielding portion formed by patterning a light-shielding film and a semi-light-transmitting film formed on a transparent substrate, respectively. The pattern, the manufacturing method of the photomask is characterized by having: a light-shielding film patterning step, which is a patterning of the light-shielding film formed on the transparent substrate to form a light-shielding film pattern; a semi-transparent film forming step, which is based on A semi-transparent film is formed on the transparent substrate including the light-shielding film pattern; the step of forming a light-transmitting portion is to partially remove the semi-transparent film, or the semi-transparent film and the light-shielding film to form the light-transmitting portion. And a translucent film removing step, which removes the semi-transparent film on the light-shielding film pattern; and the light-shielding film has an anti-reflection layer on the surface side. A resist pattern is formed in a region of the translucent portion, and the resist pattern has a size obtained by adding a margin of a specific size to the light-shielding portion side at a portion of the translucent portion adjacent to the light-shielding portion, and The size of the margin is set to M1 (μm), the size of the adjacent portion of the above-described semi-transmissive of the light shielding portion is set to S (μm), satisfy M1 ≦ 0.5S. 一種光罩之製造方法，該光罩具有藉由將形成於透明基板上之遮光膜及半透光膜分別圖案化而形成的具備透光部、半透光部、及遮光部的轉印用圖案，該光罩之製造方法之特徵在於具有：遮光膜圖案化步驟，其係將形成於上述透明基板上之遮光膜圖案化，形成遮光膜圖案；半透光膜形成步驟，其係於包含上述遮光膜圖案之上述透明基板上形成半透光膜；及透光部形成步驟，其係藉由將上述半透光膜圖案化而形成上述透光部，並且將上述遮光膜圖案上之上述半透光膜去除；且上述遮光膜於表面側具有抗反射層，於上述透光部形成步驟中，於成為上述半透光部之區域形成抗蝕圖案，上述抗蝕圖案於上述半透光部與上述遮光部鄰接之部分，具有向上述遮光部側附加特定尺寸之邊限而成之尺寸，且將上述邊限之尺寸設為M1(μm)、將與上述半透光部相鄰之上述遮光部之尺寸設為S(μm)時，滿足M1≦0.5S。A method for manufacturing a photomask, the photomask having a light-transmitting portion, a semi-light-transmitting portion, and a light-shielding portion formed by patterning a light-shielding film and a semi-light-transmitting film formed on a transparent substrate, respectively. The pattern, the manufacturing method of the photomask is characterized by having: a light-shielding film patterning step, which is patterning the light-shielding film formed on the transparent substrate, to form a light-shielding film pattern; a semi-transparent film forming step, which includes Forming a translucent film on the transparent substrate of the light-shielding film pattern; and forming a light-transmitting portion by patterning the semi-transparent film to form the light-transmitting portion, and forming the light-transmitting portion on the light-shielding film pattern The translucent film is removed; and the light-shielding film has an anti-reflection layer on the surface side. In the translucent portion forming step, a resist pattern is formed in a region that becomes the translucent portion, and the resist pattern is translucent on the translucent portion. The portion adjacent to the light-shielding portion has a size obtained by adding a margin of a specific size to the light-shielding portion side, and the size of the margin is M1 (μm), and the portion adjacent to the translucent portion is Above When the size of the light-shielding portion is set to S (μm), M1 ≦ 0.5S is satisfied. 如請求項1或2之光罩之製造方法，其中將上述邊限之尺寸設為M1(μm)時，0.2<M1。For example, if the manufacturing method of the photomask of claim 1 or 2 is set, wherein when the size of the above margin is set to M1 (μm), 0.2 <M1. 如請求項1或2之光罩之製造方法，其中將上述邊限之尺寸設為M1(μm)，且與上述半透光部鄰接之上述遮光部之尺寸為S(μm)時，0.2<M1≦0.3S。For example, if the manufacturing method of the photomask of claim 1 or 2 is set, wherein the size of the margin is M1 (μm), and the size of the light-shielding portion adjacent to the translucent portion is S (μm), 0.2 < M1 ≦ 0.3S. 如請求項1或2之光罩之製造方法，其中上述遮光膜於表面側具有抗反射層，上述遮光膜之相對於曝光之光之代表波長之光反射率未達30%。For example, the manufacturing method of the photomask of claim 1 or 2, wherein the light-shielding film has an anti-reflection layer on the surface side, and the light reflectance of the light-shielding film with respect to the representative wavelength of the exposed light does not reach 30%. 如請求項5之光罩之製造方法，其中將上述遮光膜與上述半透光膜積層時之相對於曝光之光之代表波長之光反射率為35%以上。For example, the method for manufacturing a photomask according to claim 5, wherein a light reflectance of a representative wavelength of the exposed light when the light shielding film and the translucent film are laminated is 35% or more. 如請求項1或2之光罩之製造方法，其中上述遮光膜與上述半透光膜能夠以相同蝕刻劑進行蝕刻，且上述半透光膜之蝕刻所需時間HT與上述遮光膜之蝕刻所需時間OT之比HT：OT為1：3~1：20。For example, the manufacturing method of the photomask of claim 1 or 2, wherein the light-shielding film and the translucent film can be etched with the same etchant, and the time required for etching the translucent film HT and the etching place of the light-shielding film The ratio of required time OT: HT: OT is 1: 3 ~ 1: 20. 如請求項1或2之光罩之製造方法，其中上述遮光膜與上述半透光膜能夠以相同蝕刻劑進行蝕刻，且上述遮光膜之平均蝕刻速率OR與上述半透光膜之蝕刻速率HR之比OR：HR為1.5：1~1：5。For example, the manufacturing method of the photomask of claim 1 or 2, wherein the light-shielding film and the translucent film can be etched with the same etchant, and the average etch rate OR of the light-shielding film and the etching rate HR of the translucent film The ratio OR: HR is 1.5: 1 ~ 1: 5. 如請求項1或2之光罩之製造方法，其中上述半透光膜相對於曝光之光之代表波長具有3~60%之透過率。For example, the manufacturing method of the photomask of claim 1 or 2, wherein the translucent film has a transmittance of 3 to 60% with respect to the representative wavelength of the exposed light. 如請求項1或2之光罩之製造方法，其中於上述轉印用圖案中，上述遮光部係於上述透明基板上形成有上述遮光膜，並且於上述邊限以外之上述遮光部之區域未形成有上述半透光膜。For example, the method for manufacturing a photomask according to claim 1 or 2, wherein in the transfer pattern, the light-shielding portion is formed on the transparent substrate with the light-shielding film, and the area of the light-shielding portion outside the margin is not The above-mentioned translucent film is formed. 一種光罩，其特徵在於：其係具有藉由將形成於透明基板上之遮光膜及半透光膜分別圖案化而形成的具備透光部、半透光部、及遮光部的轉印用圖案者，且上述遮光膜於表面側具有抗反射層，上述透光部係上述透明基板之表面露出而成，上述半透光部係於上述透明基板上形成上述半透光膜而成，上述遮光部於上述透明基板上形成上述遮光膜，並且沿著與上述半透光部鄰接之邊緣而具有於上述遮光膜上積層上述半透光膜之邊限部，將上述邊限之尺寸設為M1(μm)、將與上述半透光部相鄰之上述遮光部之尺寸設為S(μm)時，滿足M1≦0.5S。A photomask, which is characterized in that it is provided with a light-transmitting portion, a semi-light-transmitting portion, and a light-shielding portion which are formed by patterning a light-shielding film and a semi-light-transmitting film formed on a transparent substrate, respectively. Pattern, and the light-shielding film has an anti-reflection layer on the surface side, the light-transmitting portion is formed by exposing the surface of the transparent substrate, and the semi-light-transmitting portion is formed by forming the semi-transparent film on the transparent substrate. The light-shielding portion forms the light-shielding film on the transparent substrate, and has a margin portion where the translucent film is laminated on the light-shielding film along an edge adjacent to the translucent portion, and the size of the margin is set to M1 (μm), and when the size of the light-shielding portion adjacent to the translucent portion is set to S (μm), M1 ≦ 0.5S is satisfied. 如請求項11之光罩，其中將上述邊限部之尺寸設為M1(μm)時，0.2<M1。For example, if the mask of item 11 is used, and when the size of the marginal part is set to M1 (μm), 0.2 <M1. 如請求項11或12之光罩，其中將上述邊限部之尺寸設為M1(μm)，且與上述半透光部鄰接之上述遮光部之尺寸為S(μm)時，0.2<M1≦0.3S。For example, if the photomask of claim 11 or 12, wherein the size of the marginal portion is set to M1 (μm), and the size of the light-shielding portion adjacent to the translucent portion is S (μm), 0.2 <M1 ≦ 0.3S. 如請求項11或12之光罩，其中於上述遮光部，上述邊限部以外之區域相對於曝光之光之代表波長之光反射率未達30%。For example, the photomask of claim 11 or 12, wherein the light reflectance of the area other than the marginal portion with respect to the representative wavelength of the exposed light at the above-mentioned light-shielding portion does not reach 30%. 如請求項11或12之光罩，其中上述遮光膜與上述半透光膜能夠以相同蝕刻劑進行蝕刻。For example, the photomask of claim 11 or 12, wherein the light-shielding film and the translucent film can be etched with the same etchant. 如請求項11或12之光罩，其中於上述遮光部，於上述透明基板上形成有上述遮光膜，並且於上述邊限部以外之上述遮光部之區域未形成有上述半透光膜。For example, the photomask of claim 11 or 12, wherein the light-shielding film is formed on the transparent substrate in the light-shielding portion, and the translucent film is not formed in a region of the light-shielding portion other than the margin portion. 一種顯示裝置之製造方法，其包括以下步驟：準備藉由如請求項1或2之製造方法所製造之光罩；及藉由使用曝光裝置將上述光罩之轉印用圖案曝光而將上述轉印用圖案轉印至被轉印體上。A manufacturing method of a display device, comprising the steps of: preparing a photomask manufactured by the manufacturing method as claimed in claim 1 or 2; and exposing the above-mentioned transfer pattern by exposing the transfer pattern of the photomask using an exposure device. The printing pattern is transferred to the object to be transferred. 一種顯示裝置之製造方法，其包括以下步驟：準備如請求項11或12之光罩；及藉由使用曝光裝置將上述光罩之轉印用圖案曝光而將上述轉印用圖案轉印至被轉印體上。A method for manufacturing a display device, comprising the steps of preparing a photomask as claimed in claim 11 or 12; and transferring the pattern for transfer to the substrate by exposing the pattern for transfer of the photomask to the substrate by using an exposure device. On the transfer body.
TW106128858A 2016-09-13 2017-08-25 Photomask manufacturing method, photomask, and display device manufacturing method TWI648593B (en)

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