JP2011215614A - Multi-level gradation photomask, method for manufacturing multi-level gradation photomask, and method for transferring pattern - Google Patents

Multi-level gradation photomask, method for manufacturing multi-level gradation photomask, and method for transferring pattern Download PDF

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JP2011215614A
JP2011215614A JP2011055408A JP2011055408A JP2011215614A JP 2011215614 A JP2011215614 A JP 2011215614A JP 2011055408 A JP2011055408 A JP 2011055408A JP 2011055408 A JP2011055408 A JP 2011055408A JP 2011215614 A JP2011215614 A JP 2011215614A
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Yutaka Yoshikawa
吉川　　裕
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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Abstract

【課題】急峻な立ち上がりの形状を持つレジストパターンを被転写体上に形成する。
【解決手段】遮光部と透光部との境界、または遮光部と半透光部の境界には、半透光膜上の位相シフト調整膜が部分的に露出してなる位相シフタ部が形成され、遮光部と透光部の境界に位相シフタ部が形成されるとき、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が、位相シフタ部を透過する時の位相シフト量と、露光光が、透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となり、遮光部と半透光部の境界に位相シフタ部が形成されるとき、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が、位相シフタ部を透過する時の位相シフト量と、露光光が、半透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となる。
【選択図】図１A resist pattern having a steep rising shape is formed on a transfer target.
A phase shifter part in which a phase shift adjustment film on a semi-transparent film is partially exposed is formed at a boundary between the light-shielding part and the translucent part or between the light-shielding part and the semi-translucent part. When the phase shifter part is formed at the boundary between the light shielding part and the light transmitting part, the amount of phase shift when the exposure light having a representative wavelength in the range of i-line to g-line is transmitted through the phase shifter part, When the difference between the phase shift amount when the exposure light passes through the light transmitting part is 90 degrees or more and 270 degrees or less, and the phase shifter part is formed at the boundary between the light shielding part and the semi-light transmitting part, The difference between the phase shift amount when the exposure light having a representative wavelength within the g-line range is transmitted through the phase shifter portion and the phase shift amount when the exposure light is transmitted through the semi-transparent portion is 90 degrees. This is within 270 degrees.
[Selection] Figure 1

Description

本発明は、例えば液晶表示装置等のフラットパネルディスプレイ（Ｆｌａｔ Ｐａｎｅｌ Ｄｉｓｐｌａｙ：以下ＦＰＤと呼ぶ）等の製造に用いられる多階調フォトマスク、前記多階調フォトマスクの製造方法、及び前記多階調フォトマスクを用いたパターン転写方法に関する。   The present invention relates to a multi-tone photomask used for manufacturing a flat panel display (hereinafter referred to as FPD) such as a liquid crystal display device, a method for manufacturing the multi-tone photomask, and the multi-tone The present invention relates to a pattern transfer method using a photomask.

ＦＰＤ用の薄膜トランジスタ（Ｔｈｉｎ Ｆｉｌｍ Ｔｒａｎｓｉｓｔｏｒ：以下ＴＦＴと呼ぶ）基板は、遮光部及び透光部からなる転写用パターンが透明基板上に形成されたフォトマスクを用い、例えば５回〜６回のフォトリソグラフィ工程を経て製造されてきた。近年、フォトリソグラフィ工程数を削減するため、遮光部、半透光部、及び透光部を含む転写用パターンが透明基板上に形成された多階調フォトマスクが用いられるようになってきた。   A thin film transistor (hereinafter referred to as TFT) substrate for FPD uses a photomask in which a transfer pattern composed of a light-shielding portion and a light-transmitting portion is formed on a transparent substrate. For example, photolithography is performed 5 to 6 times. It has been manufactured through a process. In recent years, in order to reduce the number of photolithography processes, a multi-tone photomask in which a transfer pattern including a light shielding portion, a semi-translucent portion, and a translucent portion is formed on a transparent substrate has been used.

特開２００７−２４９１９８号公報JP 2007-249198 A

上述の多階調フォトマスクは、これを用いて、被転写体上に、部分的にレジスト残膜値の異なるレジストパターンを形成することが可能である。ここで、該フォトマスクにおいて、遮光部は、透明基板上に半透光膜と遮光膜とが形成されてなり、半透光部は、半透光膜が透明基板上に形成されてなり、透光部は、透明基板が露出してなるものとすることができる。しかしながら、このような多階調フォトマスクを用いて被転写体上のレジスト膜に転写用パターンを転写すると、例えば遮光部と透光部との境界部分や、遮光部と半透光部の境界部分において光の回折が生じ、遮光部に光が回り込み、露光光の強度分布がなだらかな曲線状になってしまうことがある。その結果、被転写体上に形成されるレジストパターンの側壁形状が、例えば裾を引いたようなテーパ状になる等、なだらかになってしまう場合がある。そして、このようなレジストパターンをマスクとして薄膜の加工を行おうとすると、加工線幅や形状の制御が困難となり、液晶表示装置の製造歩留りが低下してしまう場合がある。なお、光の回折による影響は、転写用パターンの微細化が進むにつれて大きくなる。   The above multi-tone photomask can be used to form resist patterns having partially different resist residual film values on the transfer target. Here, in the photomask, the light shielding part is formed by forming a semi-transparent film and a light shielding film on the transparent substrate, and the semi-transparent part is formed by forming the semi-transparent film on the transparent substrate, The translucent part can be formed by exposing the transparent substrate. However, when the transfer pattern is transferred to the resist film on the transfer object using such a multi-tone photomask, for example, the boundary portion between the light shielding portion and the light transmitting portion or the boundary between the light shielding portion and the semi-light transmitting portion. There is a case where light is diffracted in the portion, the light wraps around the light shielding portion, and the intensity distribution of the exposure light becomes a gentle curve. As a result, the side wall shape of the resist pattern formed on the transferred body may become smooth, for example, a tapered shape with a skirt. If a thin film is to be processed using such a resist pattern as a mask, it may be difficult to control the processing line width and shape, and the manufacturing yield of the liquid crystal display device may be reduced. The effect of light diffraction increases as the transfer pattern becomes finer.

本発明は、遮光部と透光部との境界部分や、遮光部と半透光部との境界部分における光の回折による影響を抑制し、側壁形状がシャープである（急峻な立ち上がり形状を有する）レジストパターンを被転写体上に形成することが可能な多階調フォトマスク、該多階調フォトマスクの製造方法、及び該多階調フォトマスクを用いたパターン転写方法を提供することを目的とする。   The present invention suppresses the influence of light diffraction at the boundary portion between the light-shielding portion and the light-transmitting portion and the boundary portion between the light-shielding portion and the semi-light-transmitting portion, and has a sharp sidewall shape (has a steep rising shape) ) To provide a multi-tone photomask capable of forming a resist pattern on an object to be transferred, a method for producing the multi-tone photomask, and a pattern transfer method using the multi-tone photomask. And

本発明の第１の態様は、遮光部、半透光部、及び透光部を含む所定の転写用パターンが透明基板上に形成された多階調フォトマスクであって、
前記遮光部は、半透光膜、位相シフト調整膜、及び遮光膜が前記透明基板上にこの順に積層されてなり、
前記半透光部は、前記半透光膜が前記透明基板上に形成されてなり、
前記透光部は、前記透明基板が露出してなり、
前記遮光部と前記透光部との境界、または前記遮光部と前記半透光部の境界には、前記半透光膜上の前記位相シフト調整膜が部分的に露出してなる位相シフタ部が形成され、
前記遮光部と前記透光部の境界に前記位相シフタ部が形成されるとき、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が、前記位相シフタ部を透過する時の位相シフト量と、前記露光光が、前記透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となり、
前記遮光部と前記半透光部の境界に前記位相シフタ部が形成されるとき、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が、前記位相シフタ部を透過する時の位相シフト量と、前記露光光が、前記半透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となることを特徴とする多階調フォトマスクである。 A first aspect of the present invention is a multi-tone photomask in which a predetermined transfer pattern including a light shielding portion, a semi-transparent portion, and a translucent portion is formed on a transparent substrate,
The light shielding portion is formed by laminating a semi-transparent film, a phase shift adjustment film, and a light shielding film in this order on the transparent substrate,
The semi-transparent portion is formed by forming the semi-transparent film on the transparent substrate,
The translucent part is formed by exposing the transparent substrate,
A phase shifter part in which the phase shift adjustment film on the semi-transparent film is partially exposed at the boundary between the light-shielding part and the translucent part or at the boundary between the light-shielding part and the semi-translucent part Formed,
When the phase shifter portion is formed at the boundary between the light shielding portion and the light transmitting portion, the amount of phase shift when exposure light having a representative wavelength within the range of i-line to g-line is transmitted through the phase shifter portion And the difference between the exposure light and the phase shift amount when passing through the light transmitting portion is 90 degrees or more and 270 degrees or less,
When the phase shifter part is formed at the boundary between the light shielding part and the semi-translucent part, the phase shift when exposure light having a representative wavelength in the range of i-line to g-line is transmitted through the phase shifter part The multi-tone photomask is characterized in that a difference between an amount and a phase shift amount when the exposure light passes through the semi-translucent portion is 90 degrees or more and 270 degrees or less.

本発明の第２の態様は、遮光部、半透光部、及び透光部を含む所定の転写用パターンが透明基板上に形成された多階調フォトマスクであって、
前記遮光部は、半透光膜、位相シフト調整膜、及び遮光膜が前記透明基板上にこの順に積層されてなり、
前記半透光部は、前記半透光膜が前記透明基板上に形成されてなり、前記透光部は、前記透明基板が露出してなり、
前記遮光部と前記透光部との境界部分には、前記半透光膜上の前記位相シフト調整膜が部分的に露出してなる位相シフタ部が形成され、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が前記位相シフタ部を透過するときの位相シフト量と、前記露光光が前記透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となる多階調フォトマスクである。 A second aspect of the present invention is a multi-tone photomask in which a predetermined transfer pattern including a light shielding portion, a semi-transparent portion, and a translucent portion is formed on a transparent substrate,
The light shielding portion is formed by laminating a semi-transparent film, a phase shift adjustment film, and a light shielding film in this order on the transparent substrate,
The translucent part is formed by forming the semi-transparent film on the transparent substrate, and the translucent part is formed by exposing the transparent substrate,
A phase shifter portion formed by partially exposing the phase shift adjusting film on the semi-transparent film is formed at a boundary portion between the light shielding portion and the light transmitting portion, and is within a range of i line to g line. The difference between the phase shift amount when the exposure light having the representative wavelength passes through the phase shifter portion and the phase shift amount when the exposure light passes through the light transmitting portion is 90 degrees or more and 270 degrees or less. This is a multi-tone photomask.

本発明の第３の態様は、前記位相シフタ部の幅が１０ｎｍ以上１０００ｎｍ以下である第１の態様に記載の多階調フォトマスクである。   A third aspect of the present invention is the multi-tone photomask according to the first aspect, wherein the width of the phase shifter portion is 10 nm or more and 1000 nm or less.

本発明の第４の態様は、前記位相シフタ部は、前記遮光膜のサイドエッチングにより形成されたものであり、前記位相シフタ部の幅は１０ｎｍ以上５００ｎｍ以下である第１又は第２の態様に記載の多階調フォトマスクである。   According to a fourth aspect of the present invention, in the first or second aspect, the phase shifter portion is formed by side etching of the light shielding film, and the width of the phase shifter portion is not less than 10 nm and not more than 500 nm. The multi-tone photomask described.

本発明の第５の態様は、前記位相シフタ部の前記露光光の透過率は５％以上２０％以下であることを特徴とする第１の態様または第２の態様に記載の多階調フォトマスクである。   A fifth aspect of the present invention is the multi-tone photo according to the first aspect or the second aspect, wherein the exposure light transmittance of the phase shifter portion is 5% or more and 20% or less. It is a mask.

本発明の第６の態様は、前記遮光部と前記半透光部との境界部分には、前記半透光膜上の前記位相シフト調整膜が部分的に露出してなる第２の位相シフタ部が形成され、
前記露光光が前記第２の位相シフタ部を透過するときの位相シフト量と、前記露光光が前記半透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となる第１から第３のいずれかの態様に記載の多階調フォトマスクである。 According to a sixth aspect of the present invention, there is provided the second phase shifter in which the phase shift adjusting film on the semi-transparent film is partially exposed at a boundary portion between the light shielding unit and the semi-translucent unit. Part is formed,
The difference between the phase shift amount when the exposure light is transmitted through the second phase shifter portion and the phase shift amount when the exposure light is transmitted through the semi-transparent portion is 90 degrees or more and 270 degrees or less. A multi-tone photomask according to any one of the first to third aspects.

本発明の第７の態様は、前記露光光が前記半透光部を透過するときの位相シフト量と、前記露光光が前記透光部を透過するときの位相シフト量と、の差が６０度未満である第１から第４のいずれかの態様に記載の多階調フォトマスクである。   In a seventh aspect of the present invention, the difference between the phase shift amount when the exposure light passes through the semi-translucent portion and the phase shift amount when the exposure light passes through the translucent portion is 60. The multi-tone photomask according to any one of the first to fourth aspects, which is less than 1 degree.

本発明の第８の態様は、遮光部、透光部、及び半透光部を含む所定の転写用パターンを透明基板上に形成する多階調フォトマスクの製造方法であって、
半透光膜、位相シフト調整膜、遮光膜、及び第１レジスト膜が前記透明基板上にこの順に積層されたフォトマスクブランクを用意する工程と、
前記第１レジスト膜に描画および現像を施し、少なくとも前記遮光部の形成予定領域を覆う第１レジストパターンを形成する工程と、
前記第１レジストパターンをマスクとして前記遮光膜及び前記位相シフト調整膜をエッチングする第１エッチング工程と、
前記第１レジストパターンを除去したのち、前記第１エッチング工程の行われた前記フォトマスクブランク上に第２レジスト膜を形成する工程と、前記第２レジスト膜に描画および現像を施し、少なくとも前記遮光部の形成予定領域及び前記半透光部の形成予定領域を覆う第２レジストパターンを形成する工程と、
前記第２レジストパターンをマスクとして前記半透光膜をエッチングすると共に、前記遮光膜の側部をエッチングして前記位相シフト調整膜を部分的に露出させて位相シフタ部を形成する第２エッチング工程と、前記第２レジストパターンを除去する工程と、を有し、
ｉ線〜ｇ線の範囲内の代表波長を有する露光光が前記位相シフタ部を透過するときの位相シフト量と、前記露光光が前記透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となる多階調フォトマスクの製造方法である。 An eighth aspect of the present invention is a method for manufacturing a multi-tone photomask, wherein a predetermined transfer pattern including a light shielding portion, a light transmitting portion, and a semi-light transmitting portion is formed on a transparent substrate,
A step of preparing a photomask blank in which a semi-transparent film, a phase shift adjustment film, a light shielding film, and a first resist film are laminated in this order on the transparent substrate;
Drawing and developing the first resist film, and forming a first resist pattern that covers at least a region where the light shielding part is to be formed;
A first etching step of etching the light-shielding film and the phase shift adjustment film using the first resist pattern as a mask;
After removing the first resist pattern, a step of forming a second resist film on the photomask blank subjected to the first etching step, drawing and developing the second resist film, and at least the light shielding Forming a second resist pattern that covers a region to be formed and a region to be formed of the semi-translucent part; and
A second etching step of etching the semi-transparent film using the second resist pattern as a mask and etching a side portion of the light shielding film to partially expose the phase shift adjustment film to form a phase shifter portion; And removing the second resist pattern,
Difference between the amount of phase shift when exposure light having a representative wavelength in the range of i-line to g-line is transmitted through the phase shifter part and phase shift amount when the exposure light is transmitted through the light-transmitting part Is a manufacturing method of a multi-tone photomask in which is 90 degrees or more and 270 degrees or less.

本発明の第９の態様は、遮光部、透光部、及び半透光部を含む所定の転写用パターンを透明基板上に形成する多階調フォトマスクの製造方法であって、
半透光膜、位相シフト調整膜、遮光膜、及び第１レジスト膜が前記透明基板上にこの順に積層されたフォトマスクブランクを用意する工程と、
前記第１レジスト膜に描画および現像を施し、前記遮光部の形成予定領域を覆う第１レジストパターンを形成する工程と、
前記第１レジストパターンをマスクとして前記遮光膜をエッチングする第１エッチング工程と、
前記第１レジストパターンを除去したのち、前記第１エッチング工程の行われた前記フォトマスクブランク上に第２レジスト膜を形成する工程と、
前記第２レジスト膜に描画および現像を施し、前記遮光部の形成予定領域と、前記遮光部と前記透光部との境界部分に位置する位相シフタ部の形成予定領域と、を覆う第２レジストパターンを形成する工程と、
前記第２レジストパターンをマスクとして前記位相シフト調整膜をエッチングして前記半透光部と前記位相シフタ部とを形成する第２エッチング工程と、
前記第２レジストパターンを除去したのち、前記第２エッチング工程の行われた前記フォトマスクブランク上に第３レジスト膜を形成する工程と、
前記第３レジスト膜に描画および現像を施し、前記透光部の形成予定領域を除く領域を覆う第３レジストパターンを形成する工程と、
前記第３レジストパターンをマスクとして前記半透光膜をエッチングする第３エッチング工程と、前記第３レジストパターンを除去する工程と、を有し、
ｉ線〜ｇ線の範囲内の代表波長を有する露光光が前記位相シフタ部を透過するときの位相シフト量と、前記露光光が前記透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となる多階調フォトマスクの製造方法である。 A ninth aspect of the present invention is a method for manufacturing a multi-tone photomask, wherein a predetermined transfer pattern including a light shielding part, a light transmitting part, and a semi-light transmitting part is formed on a transparent substrate,
A step of preparing a photomask blank in which a semi-transparent film, a phase shift adjustment film, a light shielding film, and a first resist film are laminated in this order on the transparent substrate;
Drawing and developing the first resist film, and forming a first resist pattern that covers a region where the light shielding portion is to be formed;
A first etching step of etching the light-shielding film using the first resist pattern as a mask;
Forming a second resist film on the photomask blank subjected to the first etching step after removing the first resist pattern;
The second resist film is drawn and developed to cover a region where the light shielding part is to be formed and a region where the phase shifter part is to be formed located at the boundary between the light shielding part and the light transmitting part Forming a pattern;
Etching the phase shift adjustment film using the second resist pattern as a mask to form the semi-translucent portion and the phase shifter portion; and
Forming a third resist film on the photomask blank subjected to the second etching step after removing the second resist pattern;
Drawing and developing the third resist film, and forming a third resist pattern covering a region excluding a region where the light-transmitting portion is to be formed;
A third etching step of etching the semi-transparent film using the third resist pattern as a mask, and a step of removing the third resist pattern,
Difference between the amount of phase shift when exposure light having a representative wavelength in the range of i-line to g-line is transmitted through the phase shifter part and phase shift amount when the exposure light is transmitted through the light-transmitting part Is a manufacturing method of a multi-tone photomask in which is 90 degrees or more and 270 degrees or less.

本発明の第１０の態様は、前記第２レジストパターンを形成する前記工程では、前記遮光部と前記半透光部との境界部分に位置する第２の位相シフタ部の形成予定領域を覆う前記第２レジストパターンを形成し、
前記第２エッチング工程では、前記第２の位相シフタ部を形成し、
ｉ線〜ｇ線の範囲内の代表波長を有する露光光が前記第２の位相シフタ部を透過するときの位相シフト量と、前記露光光が前記半透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となる第７の態様に記載の多階調フォトマスクの製造方法である。 According to a tenth aspect of the present invention, in the step of forming the second resist pattern, the formation region of the second phase shifter portion located at a boundary portion between the light shielding portion and the semi-translucent portion is covered. Forming a second resist pattern;
In the second etching step, the second phase shifter portion is formed,
Phase shift amount when exposure light having a representative wavelength in the range of i-line to g-line passes through the second phase shifter portion, and phase shift amount when the exposure light passes through the semi-translucent portion Is a manufacturing method of a multi-tone photomask according to the seventh aspect, in which the difference is 90 degrees or more and 270 degrees or less.

本発明の第１１の態様は、前記位相シフト調整膜が、前記遮光膜及び前記半透光膜のエッチングに用いるエッチング液又はエッチングガスに対して耐性を有する第６から８のいずれかの態様に記載の多階調フォトマスクの製造方法である。   According to an eleventh aspect of the present invention, in any one of the sixth to eighth aspects, the phase shift adjustment film is resistant to an etching solution or an etching gas used for etching the light shielding film and the semi-translucent film. It is a manufacturing method of the described multi-tone photomask.

本発明の第１２の態様は、第１から第５のいずれかの態様に記載の多階調フォトマスク、又は第６から第９のいずれかの態様に記載の製造方法による多階調フォトマスクを介し、被転写体上に形成されているレジスト膜に前記露光光を照射することにより、前記レジスト膜に前記転写用パターンを転写する工程を有するパターン転写方法である。   A twelfth aspect of the present invention is a multi-tone photomask according to any one of the first to fifth aspects, or a multi-tone photomask according to the manufacturing method according to any one of the sixth to ninth aspects. The pattern transfer method includes a step of transferring the transfer pattern onto the resist film by irradiating the resist film formed on the transfer body with the exposure light.

本発明の第１３の態様は、前記被転写体上に形成されている前記レジスト膜は、前記位相シフタ部に対応する部分の露光光に対して実質的に感度を有さない第１０の態様に記載のパターン転写方法である。   A thirteenth aspect of the present invention is the tenth aspect, wherein the resist film formed on the transfer body has substantially no sensitivity to exposure light at a portion corresponding to the phase shifter portion. The pattern transfer method described in 1.

本発明に係る多階調フォトマスク、該多階調フォトマスクの製造方法、及び該多階調フォトマスクを用いたパターン転写方法によれば、遮光部と透光部の境界部分や、遮光部と半透光部との境界部分における光の回折による影響を抑制し、側壁形状がシャープである（急峻な立ち上がり形状を有する）レジストパターンを被転写体上に形成することが可能となる。   According to the multi-tone photomask, the manufacturing method of the multi-tone photomask, and the pattern transfer method using the multi-tone photomask according to the present invention, the boundary portion between the light shielding portion and the light transmitting portion, or the light shielding portion The resist pattern having a sharp side wall shape (having a steep rising shape) can be formed on the transferred body by suppressing the influence of light diffraction at the boundary portion between the transparent portion and the semi-transparent portion.

本発明の一実施形態に係る多階調フォトマスクの部分断面図である。1 is a partial cross-sectional view of a multi-tone photomask according to an embodiment of the present invention. 本発明の一実施形態に係る多階調フォトマスクを用いたパターン転写方法を示す断面図である。It is sectional drawing which shows the pattern transfer method using the multi-tone photomask which concerns on one Embodiment of this invention. 本発明の一実施形態に係る多階調フォトマスクの製造工程のフロー図である。It is a flowchart of the manufacturing process of the multi-tone photomask which concerns on one Embodiment of this invention. 本発明の他の実施形態に係る多階調フォトマスクの部分断面図である。FIG. 6 is a partial cross-sectional view of a multi-tone photomask according to another embodiment of the present invention. 本発明の他の実施形態に係る多階調フォトマスクの製造工程のフロー図である。It is a flowchart of the manufacturing process of the multi-tone photomask which concerns on other embodiment of this invention. 本発明の一実施形態に係る多階調フォトマスクが備える転写用パターンの部分平面図である。It is a partial top view of the pattern for transfer with which the multi-tone photomask which concerns on one Embodiment of this invention is provided. 本発明の他の実施形態に係る多階調フォトマスクが備える転写用パターンの部分平面図である。It is a partial top view of the pattern for transfer with which the multi-tone photomask which concerns on other embodiment of this invention is provided. 本発明の他の実施形態に係る多階調フォトマスクが備える転写用パターンの部分平面図である。It is a partial top view of the pattern for transfer with which the multi-tone photomask which concerns on other embodiment of this invention is provided. 本発明の他の実施形態に係る多階調フォトマスクを用いたパターン転写方法を示す断面図である。It is sectional drawing which shows the pattern transfer method using the multi-tone photomask which concerns on other embodiment of this invention.

＜本発明の一実施形態＞
以下に、本発明の一実施形態を、主に図１から図３、及び図６を参照しながら説明する。図１は、本実施形態に係る多階調フォトマスク１０の部分断面図である。図２は、多階調フォトマスク１０を用いたパターン転写方法を示す断面図である。図３は、本実施形態に係る多階調フォトマスク１０の製造工程のフロー図である。図６は、本実施形態に係る多階調フォトマスク１０が備える転写用パターンの部分平面図である。 <One Embodiment of the Present Invention>
Hereinafter, an embodiment of the present invention will be described mainly with reference to FIGS. 1 to 3 and FIG. 6. FIG. 1 is a partial cross-sectional view of a multi-tone photomask 10 according to this embodiment. FIG. 2 is a cross-sectional view showing a pattern transfer method using the multi-tone photomask 10. FIG. 3 is a flowchart of the manufacturing process of the multi-tone photomask 10 according to this embodiment. FIG. 6 is a partial plan view of a transfer pattern provided in the multi-tone photomask 10 according to the present embodiment.

（１）多階調フォトマスクの構成
図１に示す多階調フォトマスク１０は、例えば液晶表示装置（ＬＣＤ）用の薄膜トランジスタ（ＴＦＴ）基板の製造等に用いられる。ただし、図１は多階調フォトマスクの積層構造を例示するものであり、実際のパターンは、これと同一とは限らない。 (1) Configuration of Multi-tone Photomask The multi-tone photomask 10 shown in FIG. 1 is used for manufacturing a thin film transistor (TFT) substrate for a liquid crystal display (LCD), for example. However, FIG. 1 illustrates a laminated structure of a multi-tone photomask, and an actual pattern is not necessarily the same.

多階調フォトマスク１０は、遮光部１１０、半透光部１１５、及び透光部１２０を含む所定の転写用パターンが透明基板１００上に形成された構成を持つ。遮光部１１０は、半透光膜１０１、位相シフト調整膜１０２、及び遮光膜１０３が透明基板１００上にこの順に積層されてなる。半透光部１１５は、半透光膜１０１が透明基板１００上に形成されてなる。透光部１２０は、透明基板１００が露出してなる。遮光部１１０と透光部１２０との境界部分には、半透光膜１０１上の位相シフト調整膜１０２が部分的に露出してなる位相シフタ部１１１が形成されている。   The multi-tone photomask 10 has a configuration in which a predetermined transfer pattern including a light shielding part 110, a semi-transparent part 115, and a translucent part 120 is formed on a transparent substrate 100. The light shielding unit 110 is formed by laminating a semi-transparent film 101, a phase shift adjusting film 102, and a light shielding film 103 on the transparent substrate 100 in this order. The semi-transparent portion 115 is formed by forming the semi-transparent film 101 on the transparent substrate 100. The transparent portion 120 is formed by exposing the transparent substrate 100. A phase shifter portion 111 is formed at the boundary portion between the light shielding portion 110 and the light transmitting portion 120 by partially exposing the phase shift adjusting film 102 on the semi-transparent film 101.

透明基板１００は、例えば石英（ＳｉＯ２）ガラスや、ＳｉＯ２，Ａｌ２Ｏ３，Ｂ２Ｏ３，ＲＯ（Ｒはアルカリ土類金属），Ｒ２Ｏ（Ｒ２はアルカリ金属）等を含む低膨張ガラス等からなる平板として構成されている。透明基板１００の主面（表面及び裏面）は、研磨されるなどして平坦且つ平滑に構成されている。透明基板１００は、例えば一辺が２０００ｍｍ〜２４００ｍｍ程度の方形とすることができる。透明基板１００の厚さは例えば３ｍｍ〜２０ｍｍ程度とすることができる。 The transparent substrate 100 includes, for example, quartz (SiO 2 ) glass, SiO 2 , Al 2 O 3 , B 2 O 3 , RO (R is an alkaline earth metal), R 2 O (R 2 is an alkali metal), or the like. It is configured as a flat plate made of low expansion glass or the like. The main surface (front surface and back surface) of the transparent substrate 100 is configured to be flat and smooth by polishing or the like. The transparent substrate 100 can be a square having a side of about 2000 mm to 2400 mm, for example. The thickness of the transparent substrate 100 can be set to about 3 mm to 20 mm, for example.

半透光膜１０１は、クロム（Ｃｒ）を含む材料からなり、例えば窒化クロム（ＣｒＮ）、酸化クロム（ＣｒＯ）、酸窒化クロム（ＣｒＯＮ）、フッ化クロム（ＣｒＦ）等からなる。半透光膜１０１は、例えば硝酸第２セリウムアンモニウム（（ＮＨ４）２Ｃｅ（ＮＯ３）６）及び過塩素酸（ＨＣｌＯ４）を含む純水からなるクロム用エッチング液を用いてエッチング可能なように構成されている。また、半透光膜１０１は、フッ素（Ｆ）系のエッチング液（又はエッチングガス）に対するエッチング耐性を有し、後述するようにフッ素（Ｆ）系のエッチング液（又はエッチングガス）を用いて位相シフト調整膜１０２をエッチングする際のエッチングストッパ層として機能する。 The translucent film 101 is made of a material containing chromium (Cr), and is made of, for example, chromium nitride (CrN), chromium oxide (CrO), chromium oxynitride (CrON), chromium fluoride (CrF), or the like. The translucent film 101 can be etched using a chromium etching solution made of pure water containing, for example, ceric ammonium nitrate ((NH 4 ) 2 Ce (NO 3 ) 6 ) and perchloric acid (HClO 4 ). It is configured as follows. Further, the semi-transparent film 101 has an etching resistance to a fluorine (F) -based etching solution (or etching gas), and a phase using a fluorine (F) -based etching solution (or etching gas) as will be described later. It functions as an etching stopper layer when the shift adjustment film 102 is etched.

位相シフト調整膜１０２は、モリブデン（Ｍｏ）等の金属材料とシリコン（Ｓｉ）とを含む材料からなり、例えば、ＭｏＳｉｘ、ＭｏＳｉＮ、ＭｏＳｉＯＮ、ＭｏＳｉＣＯＮ等からなる。位相シフト調整膜１０２は、フッ素（Ｆ）系のエッチング液（又はエッチングガス）を用いてエッチング可能なように構成されている。また、位相シフト調整膜１０２は、上述のクロム用エッチング液に対するエッチング耐性を有し、後述するようにクロム用エッチング液を用いて遮光膜１０３をエッチングする際のエッチングストッパ層として機能する。   The phase shift adjustment film 102 is made of a material containing a metal material such as molybdenum (Mo) and silicon (Si), and is made of, for example, MoSix, MoSiN, MoSiON, MoSiCON, or the like. The phase shift adjustment film 102 is configured to be etched using a fluorine (F) -based etching solution (or etching gas). Further, the phase shift adjusting film 102 has etching resistance to the above-described chromium etching solution, and functions as an etching stopper layer when the light shielding film 103 is etched using the chromium etching solution as described later.

遮光膜１０３は、実質的にクロム（Ｃｒ）からなる。なお、遮光膜１０３の表面にＣｒ化合物（ＣｒＯ、ＣｒＣ，ＣｒＮ等）を積層すれば（図示せず）、遮光膜１０３の表面に反射抑制機能を持たせることが出来る。遮光膜１０３は、上述のクロム用エッチング液を用いてエッチング可能なように構成されている。   The light shielding film 103 is substantially made of chromium (Cr). If a Cr compound (CrO, CrC, CrN, etc.) is laminated on the surface of the light shielding film 103 (not shown), the surface of the light shielding film 103 can have a reflection suppressing function. The light shielding film 103 is configured to be etched using the above-described chromium etching solution.

遮光部１１０、半透光部１１５、および透光部１２０は、例えばｉ線〜ｇ線の範囲内の代表波長を有する露光光に対し、それぞれ所定の範囲内の透過率を有するように構成されている。すなわち、遮光部１１０は上述の露光光を遮光（光透過率が略０％）させるように構成されている。また、透光部１２０は、上述の露光光を略１００％透過させるように構成されている。また、半透光部１１５は、例えば露光光の透過率を２０〜８０％（十分に広い透光部１２０の透過率を１００％としたとき。以下同様）、好ましくは３０〜６０％程度に低減させるように構成されている。半透光部１１５の透過率は、半透光部１１５を構成する半透光膜１０１の材質及び厚さを設定することで任意に制御することができる。なお、ｉ線（３６５ｎｍ）、ｈ線（４０５ｎｍ）、ｇ線（４３６ｎｍ）とは、水銀（Ｈｇ）の主な発光スペクトルである。また、ここでいう代表波長とは、ｉ線、ｈ線、ｇ線のうちいずれかの、任意の波長のことである。   The light shielding unit 110, the semi-transparent unit 115, and the translucent unit 120 are configured to have a transmittance within a predetermined range, for example, for exposure light having a representative wavelength within a range of i-line to g-line, for example. ing. That is, the light shielding unit 110 is configured to shield the above-described exposure light (light transmittance is approximately 0%). Moreover, the translucent part 120 is comprised so that the above-mentioned exposure light may permeate | transmit substantially 100%. The semi-translucent portion 115 has, for example, an exposure light transmittance of 20 to 80% (when the transmittance of the sufficiently wide light-transmitting portion 120 is 100%, the same applies hereinafter), preferably about 30 to 60%. It is comprised so that it may reduce. The transmittance of the semi-transparent portion 115 can be arbitrarily controlled by setting the material and thickness of the semi-transparent film 101 constituting the semi-transparent portion 115. Note that i-line (365 nm), h-line (405 nm), and g-line (436 nm) are main emission spectra of mercury (Hg). The representative wavelength here is any wavelength of i-line, h-line, and g-line.

遮光部１１０と透光部１２０との境界部分に形成された位相シフタ部１１１は、位相シフタ部１１１を透過する露光光の位相を所定の値だけシフトさせるように構成されている。具体的には、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が位相シフタ部１１１を透過するときの位相シフト量と、上述の露光光が透光部１２０を透過するときの位相シフト量と、の差が、９０度以上２７０度以内、より好ましくは１５０度以上２１０度以内となるように構成されている。更に好ましくは、ｉ線〜ｇ線の範囲のすべての露光光が位相シフタ部１１１を透過するときの位相シフト量と、上述の露光光が透光部１２０を透過するときの位相シフト量と、の差が、上記の各範囲以内であるようにすることができる。これにより、透光部１２０を透過して回折により位相シフタ部１１１側へ進入した露光光と、位相シフタ部１１１を透過した露光光と、が互い干渉して打ち消しあうこととなる。その結果、後述するように、被転写体に形成されているレジスト膜に多階調フォトマスク１０を介して露光光を照射する際に、遮光部１１０と透光部１２０との境界部分に対向するレジスト膜の感光を抑制でき、側壁形状がシャープである（急峻な立ち上がり形状を有する）レジストパターンを被転写体上に形成することが可能となる。   The phase shifter unit 111 formed at the boundary between the light shielding unit 110 and the light transmitting unit 120 is configured to shift the phase of the exposure light transmitted through the phase shifter unit 111 by a predetermined value. Specifically, the phase shift amount when the exposure light having a representative wavelength in the range of i-line to g-line is transmitted through the phase shifter unit 111 and the phase when the above-described exposure light is transmitted through the light transmitting unit 120. The difference from the shift amount is 90 degrees or more and 270 degrees or less, more preferably 150 degrees or more and 210 degrees or less. More preferably, the phase shift amount when all the exposure light in the range of i-line to g-line is transmitted through the phase shifter unit 111, and the phase shift amount when the above-described exposure light is transmitted through the light transmitting unit 120, Can be within the above ranges. As a result, the exposure light transmitted through the light transmitting part 120 and entering the phase shifter part 111 side by diffraction and the exposure light transmitted through the phase shifter part 111 interfere with each other and cancel each other. As a result, as will be described later, when the resist film formed on the transfer object is irradiated with the exposure light through the multi-tone photomask 10, it faces the boundary portion between the light shielding portion 110 and the light transmitting portion 120. The resist film can be prevented from being exposed to light, and a resist pattern having a sharp side wall shape (having a steep rising shape) can be formed on the transfer target.

半透光部１１５の位相シフト量は所定値未満となるように構成されている。具体的には、上述の代表波長を有する露光光が半透光部１１５を透過するときの位相シフト量と、上述の露光光が透光部１２０を透過するときの位相シフト量と、の差が、６０度未満、好ましくは３０度未満になるように構成されている。これにより、透光部１２０を透過した露光光と、半透光部１１５を透過した露光光とが互いに干渉して打ち消しあうことを抑制することができる。その結果、被転写体に形成されているレジスト膜に多階調フォトマスク１０を介して露光光を照射する際に、半透光部１１５と透光部１２０との境界部分に不要な暗部が生じず、レジスト膜をより確実に感光させることができる。   The phase shift amount of the semi-translucent portion 115 is configured to be less than a predetermined value. Specifically, the difference between the phase shift amount when the exposure light having the above-described representative wavelength is transmitted through the semi-translucent portion 115 and the phase shift amount when the above-described exposure light is transmitted through the translucent portion 120. Is less than 60 degrees, preferably less than 30 degrees. Thereby, it is possible to suppress the exposure light transmitted through the translucent part 120 and the exposure light transmitted through the semi-transparent part 115 from interfering with each other and canceling each other. As a result, when the resist film formed on the transfer object is irradiated with exposure light through the multi-tone photomask 10, an unnecessary dark portion is formed at the boundary between the semi-transparent portion 115 and the translucent portion 120. It does not occur and the resist film can be more reliably exposed.

なお、位相シフタ部１１１の位相シフト量は、位相シフタ部１１１を構成する半透光膜１０１の位相シフト量と、位相シフト調整膜１０２の位相シフト量と、の重ね合わせで定まる。上述したように、半透光部１１５の位相シフト量（半透光膜１０１の位相シフト量）は、６０度未満、好ましくは３０度未満とされている。位相シフタ部１１１の位相シフト量は、位相シフト調整膜１０２の材料及び厚さを調整することで実質的に制御することができる。なお、半透光部１１５は位相シフト調整膜１０２を有さないため、半透光部１１５の透過率は、位相シフト調整膜１０２の材料や厚さに依存しない。すなわち、本実施形態によれば、半透光部１１５の透過率と、位相シフタ部１１１の位相シフト量とを、独立して制御することが可能である。   Note that the phase shift amount of the phase shifter unit 111 is determined by the superposition of the phase shift amount of the semi-transparent film 101 constituting the phase shifter unit 111 and the phase shift amount of the phase shift adjustment film 102. As described above, the phase shift amount of the semi-translucent portion 115 (the phase shift amount of the semi-transparent film 101) is less than 60 degrees, preferably less than 30 degrees. The phase shift amount of the phase shifter unit 111 can be substantially controlled by adjusting the material and thickness of the phase shift adjustment film 102. Note that, since the semi-transmissive portion 115 does not have the phase shift adjustment film 102, the transmittance of the semi-transmissive portion 115 does not depend on the material and thickness of the phase shift adjustment film 102. That is, according to the present embodiment, it is possible to independently control the transmittance of the semi-transparent portion 115 and the phase shift amount of the phase shifter portion 111.

なお、位相シフタ部１１１の幅、つまり位相シフト調整膜１０２の露出面の幅（図６でいうＷ）は、１０ｎｍ以上１００μｍ以下、好ましくは１０ｎｍ以上１０００ｎｍ以下、さらに好ましくは５０ｎｍ以上５００ｎｍ以下とすることができる。尚、後述するように、この位相シフタ部１１１を、ウェットエッチングに際してのサイドエッチングによって形成する場合には、上記幅を１０ｎｍ以上５００ｎｍ以下とすることができ、より好ましくは、５０ｎｍ以上２００ｎｍ以下とすることができる。このような幅にすることで、上述の効果を得やすくなる。   Note that the width of the phase shifter unit 111, that is, the width of the exposed surface of the phase shift adjustment film 102 (W in FIG. 6) is 10 nm to 100 μm, preferably 10 nm to 1000 nm, and more preferably 50 nm to 500 nm. be able to. As will be described later, when the phase shifter portion 111 is formed by side etching during wet etching, the width can be 10 nm or more and 500 nm or less, and more preferably 50 nm or more and 200 nm or less. be able to. By using such a width, the above-described effect can be easily obtained.

図６は、本実施形態に係る多階調フォトマスク１０が備える転写用パターンの部分平面図である。このように、遮光部１１０、透光部１２０及び半透光部１１５の平面形状は、被転写体としての液晶表示装置用基板上に形成する回路パターン（デバイスパターン）に応じ、種々の形状に構成されている。なお、遮光部１１０と透光部１２０との境界部分には、位相シフタ部１１１が形成されている。   FIG. 6 is a partial plan view of a transfer pattern provided in the multi-tone photomask 10 according to the present embodiment. As described above, the planar shapes of the light-shielding portion 110, the light-transmissive portion 120, and the semi-light-transmissive portion 115 are various shapes depending on the circuit pattern (device pattern) formed on the liquid crystal display device substrate as the transfer target. It is configured. A phase shifter 111 is formed at the boundary between the light shielding unit 110 and the light transmitting unit 120.

図２に、多階調フォトマスク１０を用いたパターン転写工程によって被転写体３０に形成されるレジストパターン３０２ｐの部分断面図を例示する。レジストパターン３０２ｐは、被転写体３０に形成されたポジ型レジスト膜３０２に多階調フォトマスク１０を介して露光光を照射し、現像することにより形成される。被転写体３０は、基板３００と、基板３００上に順に積層された金属薄膜や絶縁層、半導体層などの任意の被加工層３０１とを備えており、ポジ型レジスト膜３０２は被加工層３０１上に均一な厚さで予め形成されているものとする。なお、被加工層３０１を構成する各層は、各層の上層のエッチング液（又はエッチングガス）に対して耐性を有するように構成されていてもよい。   FIG. 2 illustrates a partial cross-sectional view of a resist pattern 302p formed on the transfer target 30 by a pattern transfer process using the multi-tone photomask 10. The resist pattern 302p is formed by irradiating the positive resist film 302 formed on the transfer target 30 with exposure light through the multi-tone photomask 10 and developing it. The transferred object 30 includes a substrate 300 and an arbitrary processed layer 301 such as a metal thin film, an insulating layer, and a semiconductor layer, which are sequentially stacked on the substrate 300, and the positive resist film 302 is the processed layer 301. It is preliminarily formed with a uniform thickness on the top. In addition, each layer which comprises the to-be-processed layer 301 may be comprised so that it may have tolerance with respect to the etching liquid (or etching gas) of the upper layer of each layer.

多階調フォトマスク１０を介してポジ型レジスト膜３０２に上述の露光光を照射すると、遮光部１１０では露光光が透過せず、また、半透光部１１５、透光部１２０の順に露光光の光量が段階的に増加する。そして、ポジ型レジスト膜３０２は、遮光部１１０、半透光部１１５のそれぞれに対応する領域で膜厚が順に薄くなり、透光部１２０に対応する領域で除去される。このようにして、被転写体３０上に膜厚が段階的に異なるレジストパターン３０２ｐが形成される。   When the above-described exposure light is irradiated to the positive resist film 302 via the multi-tone photomask 10, the exposure light is not transmitted through the light shielding unit 110, and the exposure light is sequentially emitted from the semi-translucent unit 115 and the translucent unit 120. The amount of light increases step by step. Then, the positive resist film 302 has a thickness that decreases in order in the regions corresponding to the light-shielding portion 110 and the semi-transparent portion 115 and is removed in the region corresponding to the transparent portion 120. In this manner, resist patterns 302p having different thicknesses are formed on the transfer target 30 in stages.

レジストパターン３０２ｐが形成されたら、レジストパターン３０２ｐに覆われていない領域（透光部１２０に対応する領域）にて露出している被加工層３０１を表面側から順次エッチングして除去する。そして、レジストパターン３０２ｐをアッシング（減膜）して膜厚が薄い領域（半透光部１１５に対応する領域）を除去し、新たに露出した被加工層３０１を順次エッチングして除去する。このように、膜厚が段階的に異なるレジストパターン３０２ｐを用いることで、従来のフォトマスク２枚分の工程を実施したこととなり、マスク枚数を削減でき、フォトリソグラフィ工程を簡略化できる。   When the resist pattern 302p is formed, the processing target layer 301 exposed in a region not covered with the resist pattern 302p (region corresponding to the light transmitting portion 120) is sequentially etched away from the surface side. Then, the resist pattern 302p is ashed (reduced) to remove the thin region (the region corresponding to the semi-translucent portion 115), and the newly exposed layer 301 to be etched is sequentially removed. As described above, by using the resist pattern 302p having different thicknesses in steps, the conventional process for two photomasks is performed, the number of masks can be reduced, and the photolithography process can be simplified.

なお、上述したように、透光部１２０を透過して回折により位相シフタ部１１１側へ進入した露光光と、位相シフタ部１１１を透過した露光光とは、互い干渉して打ち消しあうように構成されている。そのため、遮光部１１０と透光部１２０との境界部分においてレジスト膜の感光を抑制でき、側壁形状がシャープである（急峻な立ち上がり形状を有する）レジストパターン３０２ｐを被転写体上に形成することが可能となる。また、透光部１２０を透過した露光光と、半透光部１１５を透過した露光光とは、干渉による打ち消し合いが小さくなるように構成されている。そのため、半透光部１１５と透光部１２０との境界部分に不要な暗部を生じさせず、ポジ型レジスト膜３０２をより確実に感光させることができる。なお、ポジ型レジスト膜３０２の感光不良は、例えばレジストパターン３０２ｐの形状不良や、被加工層３０１のエッチング不良を引き起こす要因となる。   Note that, as described above, the exposure light that has passed through the light transmitting portion 120 and entered the phase shifter portion 111 side by diffraction and the exposure light that has passed through the phase shifter portion 111 interfere with each other and cancel each other. Has been. Therefore, the resist film can be prevented from being exposed at the boundary portion between the light shielding portion 110 and the light transmitting portion 120, and a resist pattern 302p having a sharp sidewall shape (having a steep rising shape) can be formed on the transfer target. It becomes possible. Further, the exposure light transmitted through the translucent part 120 and the exposure light transmitted through the semi-transparent part 115 are configured such that cancellation due to interference is reduced. Therefore, an unnecessary dark portion is not generated at the boundary portion between the semi-translucent portion 115 and the translucent portion 120, and the positive resist film 302 can be more reliably exposed. Note that the photosensitive failure of the positive resist film 302 causes, for example, a defective shape of the resist pattern 302p and an etching failure of the layer to be processed 301.

（２）多階調フォトマスクの製造方法
続いて、本実施形態に係る多階調フォトマスク１０の製造方法について、図３を参照しながら説明する。 (2) Manufacturing Method of Multi-tone Photomask Next, a manufacturing method of the multi-tone photomask 10 according to the present embodiment will be described with reference to FIG.

（フォトマスクブランク準備工程）
まず、図３（ａ）に例示するように、透明基板１００上に半透光膜１０１、位相シフト調整膜１０２、遮光膜１０３がこの順に形成され、最上層に第１レジスト膜１０４が形成されたフォトマスクブランク１０ｂを準備する。なお、第１レジスト膜１０４は、ポジ型フォトレジスト材料或いはネガ型フォトレジスト材料により構成することが可能である。以下の説明では、第１レジスト膜１０４がポジ型フォトレジスト材料より形成されているものとする。第１レジスト膜１０４は、例えばスリットコータやスピンコータ等を用いて形成することができる。なお、フォトマスクブランク１０ｂを用意する際には、半透光部１１５を透過する露光光の光透過率、及び位相シフタ部１１１を透過する露光光の位相シフト量等が、上述の条件を満たすように、半透光膜１０１及び位相シフト調整膜１０２の材質、厚さをそれぞれ選択する。 (Photomask blank preparation process)
First, as illustrated in FIG. 3A, a semi-transparent film 101, a phase shift adjustment film 102, and a light shielding film 103 are formed in this order on a transparent substrate 100, and a first resist film 104 is formed as the uppermost layer. A photomask blank 10b is prepared. The first resist film 104 can be composed of a positive photoresist material or a negative photoresist material. In the following description, it is assumed that the first resist film 104 is formed from a positive photoresist material. The first resist film 104 can be formed using, for example, a slit coater or a spin coater. When preparing the photomask blank 10b, the light transmittance of the exposure light transmitted through the semi-transparent portion 115, the phase shift amount of the exposure light transmitted through the phase shifter portion 111, and the like satisfy the above-described conditions. As described above, the material and thickness of the semi-transparent film 101 and the phase shift adjusting film 102 are selected.

（第１レジストパターン形成工程）
次に、フォトマスクブランク１０ｂに対して、レーザ描画機等により描画露光を行い、第１レジスト膜１０４を感光させ、スプレー方式等の手法により第１レジスト膜１０４に現像液を供給して現像を施し、少なくとも遮光部１１０の形成予定領域を覆う第１レジストパターン１０４ｐを形成する。すなわち、後述の第２エッチング工程において遮光膜１０３をサイドエッチングさせて位相シフタ部１１１を形成する際、遮光部１１０が所定の領域を保って形成されるよう、少なくとも遮光部１１０の形成予定領域を覆う第１レジストパターン１０４ｐを形成するのである。第１レジストパターン１０４ｐが形成された状態を、図３（ｂ）に例示する。 (First resist pattern forming step)
Next, the photomask blank 10b is subjected to drawing exposure by a laser drawing machine or the like, the first resist film 104 is exposed, and a developing solution is supplied to the first resist film 104 by a technique such as a spray method for development. Then, a first resist pattern 104p that covers at least a region where the light shielding unit 110 is to be formed is formed. That is, when forming the phase shifter portion 111 by side-etching the light shielding film 103 in the second etching step described later, at least a region where the light shielding portion 110 is to be formed is formed so that the light shielding portion 110 is formed while maintaining a predetermined region. A covering first resist pattern 104p is formed. A state in which the first resist pattern 104p is formed is illustrated in FIG.

（第１エッチング工程）
次に、形成した第１レジストパターン１０４ｐをマスクとして、遮光膜１０３をエッチングして遮光膜パターン１０３ｐを形成する。遮光膜１０３のエッチングは、上述のクロム用エッチング液を、スプレー方式等の手法により遮光膜１０３に供給して行うことが可能である。このとき、下地の位相シフト調整膜１０２はエッチングストッパ層として機能する。 (First etching process)
Next, using the formed first resist pattern 104p as a mask, the light shielding film 103 is etched to form the light shielding film pattern 103p. Etching of the light shielding film 103 can be performed by supplying the above-described etching solution for chromium to the light shielding film 103 by a spray method or the like. At this time, the underlying phase shift adjustment film 102 functions as an etching stopper layer.

次に、第１レジストパターン１０４ｐ又は遮光膜パターン１０３ｐをマスクとして、位相シフト調整膜１０２をエッチングして位相シフト調整膜パターン１０２ｐを形成し、半透光膜１０１を部分的に露出させる。位相シフト調整膜１０２のエッチングは、フッ素（Ｆ）系のエッチング液（又はエッチングガス）を位相シフト膜１０２に供給して行うことが可能である。このとき、下地の半透光膜１０１はエッチングストッパ層として機能する。遮光膜パターン１０３ｐ及び位相シフト調整膜パターン１０２ｐが形成された状態を、図３（ｃ）に例示する。なお、遮光膜パターン１０３ｐをマスクとして位相シフト調整膜１０２をエッチングする際には、第１レジストパターン１０４ｐを予め剥離してから行ってもよい。   Next, using the first resist pattern 104p or the light shielding film pattern 103p as a mask, the phase shift adjustment film 102 is etched to form the phase shift adjustment film pattern 102p, and the semi-transparent film 101 is partially exposed. Etching of the phase shift adjustment film 102 can be performed by supplying a fluorine (F) -based etching solution (or etching gas) to the phase shift film 102. At this time, the underlying semi-transparent film 101 functions as an etching stopper layer. FIG. 3C illustrates a state where the light shielding film pattern 103p and the phase shift adjustment film pattern 102p are formed. When the phase shift adjustment film 102 is etched using the light shielding film pattern 103p as a mask, the first resist pattern 104p may be removed in advance.

（第２レジスト膜形成工程）
次に、第１レジストパターン１０４ｐを除去した後、遮光膜パターン１０３ｐ及び露出した半透光膜１０１を有するフォトマスクブランク１０ｂ上の全面に、第２レジスト膜１０５を形成する。第１レジストパターン１０４ｐは、第１のレジストパターン１０４ｐに剥離液等を接触させることで除去できる。第２レジスト膜１０５は、第１レジスト膜１０４と同様に、例えばスリットコータやスピンコータ等を用いて形成することができる。第２レジスト膜１０５が形成された状態を、図３（ｄ）に例示する。 (Second resist film forming step)
Next, after removing the first resist pattern 104p, a second resist film 105 is formed on the entire surface of the photomask blank 10b having the light shielding film pattern 103p and the exposed semi-transparent film 101. The first resist pattern 104p can be removed by bringing a stripping solution or the like into contact with the first resist pattern 104p. Similar to the first resist film 104, the second resist film 105 can be formed using, for example, a slit coater or a spin coater. A state where the second resist film 105 is formed is illustrated in FIG.

（第２レジストパターン形成工程）
次に、レーザ描画機等により描画露光を行い、第２レジスト膜１０５を感光させ、スプレー方式等の手法により第２レジスト膜１０５に現像液を供給して現像を施し、少なくとも遮光部１１０の形成予定領域及び半透光部１１５の形成予定領域をそれぞれ覆う第２レジストパターン１０５ｐを形成する。第２レジストパターン１０５ｐが形成された状態を図３（ｅ）に例示する。 (Second resist pattern forming step)
Next, drawing exposure is performed by a laser drawing machine or the like, the second resist film 105 is exposed, a developing solution is supplied to the second resist film 105 by a spray method or the like, and development is performed, so that at least the light shielding portion 110 is formed. A second resist pattern 105p is formed to cover the planned area and the planned formation area of the semi-translucent portion 115, respectively. The state in which the second resist pattern 105p is formed is illustrated in FIG.

（第２エッチング工程）
次に、形成した第２レジストパターン１０５ｐをマスクとして半透光膜１０１をエッチングして半透光膜パターン１０１ｐを形成すると共に、透明基板１００を部分的に露出させて透光部１２０を形成する。さらに、遮光膜パターン１０３ｐの露出した側部に対してもエッチング（サイドエッチング）を行い、位相シフト調整膜パターン１０２ｐを部分的に露出させて位相シフタ部１１１を形成する。そして、位相シフト調整膜１０２の露出面の幅が、１０ｎｍ以上５００ｎｍ以下、好ましくは５０ｎｍ以上２００ｎｍ以下となったら、エッチングを停止する。半透光膜１０１及び遮光膜パターン１０３ｐのエッチングは、クロム用エッチング液を、スプレー方式等の手法により半透光膜１０１の露出面、及び遮光膜パターン１０３ｐの側部に供給して行うことが可能である。第２エッチング工程が実施された状態を図３（ｆ）に例示する。 (Second etching process)
Next, the semi-transparent film 101 is etched using the formed second resist pattern 105p as a mask to form the semi-transparent film pattern 101p, and the transparent substrate 100 is partially exposed to form the translucent part 120. . Further, the exposed side portion of the light shielding film pattern 103p is also etched (side etching), and the phase shift adjustment film pattern 102p is partially exposed to form the phase shifter portion 111. Then, the etching is stopped when the width of the exposed surface of the phase shift adjustment film 102 becomes 10 nm to 500 nm, preferably 50 nm to 200 nm. Etching the semi-transparent film 101 and the light-shielding film pattern 103p is performed by supplying a chromium etching solution to the exposed surface of the semi-transparent film 101 and the side portion of the light-shielding film pattern 103p by a spray method or the like. Is possible. FIG. 3F illustrates a state where the second etching process has been performed.

（第２レジストパターン除去工程）
次に、第２レジストパターン１０５ｐを除去し、本実施形態に係る多階調フォトマスク１０の製造を完了する。第２レジストパターン１０５ｐは、第２レジストパターン１０５ｐに剥離液等を接触させることで除去できる。第２レジストパターンを除去した状態を図３（ｇ）に例示する。 (Second resist pattern removal step)
Next, the second resist pattern 105p is removed, and the manufacture of the multi-tone photomask 10 according to the present embodiment is completed. The second resist pattern 105p can be removed by bringing a stripping solution or the like into contact with the second resist pattern 105p. A state where the second resist pattern is removed is illustrated in FIG.

（３）本実施形態に係る効果
本実施形態によれば、以下に示す１つまたは複数の効果を奏する。 (3) Effects according to the present embodiment According to the present embodiment, the following one or more effects are achieved.

（ａ）本実施形態によれば、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が位相シフタ部１１１を透過するときの位相シフト量と、上述の露光光が透光部１２０を透過するときの位相シフト量と、の差が、９０度以上２７０度以内、より好ましくは１５０度以上２１０度以内となるように構成されている。これにより、透光部１２０を透過して回折により位相シフタ部１１１側へ進入した露光光と、位相シフタ部１１１を透過した露光光と、が互い干渉して打ち消しあうこととなる。その結果、被転写体に形成されているレジスト膜に多階調フォトマスク１０を介して露光光を照射する際に、遮光部１１０と透光部１２０との境界部分に対向するレジスト膜の感光を抑制でき、側壁形状がシャープである（急峻な立ち上がり形状を有する）レジストパターンを被転写体上に形成することが可能となる。 (A) According to this embodiment, the amount of phase shift when exposure light having a representative wavelength in the range of i-line to g-line passes through the phase shifter unit 111, and the above-described exposure light passes through the translucent unit 120. The difference from the phase shift amount when transmitting is 90 degrees or more and 270 degrees or less, more preferably 150 degrees or more and 210 degrees or less. As a result, the exposure light transmitted through the light transmitting part 120 and entering the phase shifter part 111 side by diffraction and the exposure light transmitted through the phase shifter part 111 interfere with each other and cancel each other. As a result, when the resist film formed on the transfer object is irradiated with exposure light through the multi-tone photomask 10, the resist film facing the boundary portion between the light shielding portion 110 and the light transmitting portion 120 is exposed. Thus, a resist pattern having a sharp side wall shape (having a steep rising shape) can be formed on the transfer target.

（ｂ）本実施形態によれば、上述の代表波長を有する露光光が半透光部１１５を透過するときの位相シフト量と、上述の露光光が透光部１２０を透過するときの位相シフト量と、の差が、６０度未満、好ましくは３０度未満になるように構成されている。これにより、透光部１２０を透過した露光光と、半透光部１１５を透過した露光光と、が互いに干渉して打ち消しあうことを抑制することができる。その結果、被転写体に形成されているレジスト膜に多階調フォトマスク１０を介して露光光を照射する際に、半透光部１１５と透光部１２０との境界部分に不要な暗部が生じず、レジスト膜をより確実に感光させることができる。 (B) According to the present embodiment, the phase shift amount when the exposure light having the above-described representative wavelength is transmitted through the semi-transparent portion 115 and the phase shift when the above-described exposure light is transmitted through the translucent portion 120. The difference between the amount and the amount is less than 60 degrees, preferably less than 30 degrees. Thereby, it is possible to suppress the exposure light transmitted through the translucent part 120 and the exposure light transmitted through the semi-transparent part 115 from interfering with each other and canceling each other. As a result, when the resist film formed on the transfer object is irradiated with exposure light through the multi-tone photomask 10, an unnecessary dark portion is formed at the boundary between the semi-transparent portion 115 and the translucent portion 120. It does not occur and the resist film can be more reliably exposed.

（ｃ）本実施形態によれば、位相シフタ部１１１の位相シフト量は、位相シフト調整膜１０２の材料及び厚さを調整することで実質的に制御できる。また、半透光部１１５は位相シフト調整膜１０２を有さないため、半透光部１１５の透過率は、位相シフト調整膜１０２の材料や厚さに依存しない。すなわち、本実施形態によれば、半透光部１１５の透過率と、位相シフタ部１１１の位相シフト量とを、独立して制御することが可能である。 (C) According to this embodiment, the phase shift amount of the phase shifter unit 111 can be substantially controlled by adjusting the material and thickness of the phase shift adjustment film 102. Further, since the semi-translucent portion 115 does not have the phase shift adjustment film 102, the transmittance of the semi-transmission portion 115 does not depend on the material and thickness of the phase shift adjustment film 102. That is, according to the present embodiment, it is possible to independently control the transmittance of the semi-transparent portion 115 and the phase shift amount of the phase shifter portion 111.

（ｄ）本実施形態によれば、位相シフタ部１１１の幅、つまり位相シフト調整膜１０２の露出面の幅は、１０ｎｍ以上１０００ｎｍ以下、好ましくは１０ｎｍ以上５００ｎｍ以下、より好ましくは５０ｎｍ以上２００ｎｍ以下としている。このような幅にすることで、上述の効果を得やすくなる。 (D) According to the present embodiment, the width of the phase shifter unit 111, that is, the width of the exposed surface of the phase shift adjustment film 102 is 10 nm or more and 1000 nm or less, preferably 10 nm or more and 500 nm or less, more preferably 50 nm or more and 200 nm or less. Yes. By using such a width, the above-described effect can be easily obtained.

（ｅ）本実施形態によれば、第２エッチング工程において、第２レジストパターン１０５ｐをマスクとして半透光膜１０１をエッチングすると共に、遮光膜パターン１０３ｐの側部をサイドエッチングして位相シフト調整膜パターン１０２ｐを部分的に露出させている。すなわち、遮光膜パターン１０３ｐ、位相シフト調整膜パターン１０２ｐ、及び半透光膜パターン１０１ｐの３種類の異なるパターンを、サイドエッチングを利用することで２回のフォトリソグラフィ工程により形成している。これにより、多階調フォトマスク１０の製造工程におけるフォトリソグラフィ工程数を削減することが可能となる。換言すれば、本実施形態によると、半透光膜１０１、位相シフト調整膜１０２、遮光膜１０３の素材を選択することにより、ウェットエッチングの際にサイドエッチングが進行することを利用したパターニングを行うことができる。本実施形態では、３つの膜を２回のエッチングによってパターニングしている。この利点を得るために、たとえば、半透光膜１０１及び遮光膜１０３の素材を、同じエッチャントによってエッチング可能な素材（たとえばＣｒ系）とし、位相シフト調整膜１０２をこのエッチャントに対して耐性をもつ素材（例えばＭｏＳｉ系）としているのである。 (E) According to the present embodiment, in the second etching step, the semi-transparent film 101 is etched using the second resist pattern 105p as a mask, and the side portion of the light shielding film pattern 103p is side-etched to perform the phase shift adjustment film. The pattern 102p is partially exposed. That is, three different patterns of the light shielding film pattern 103p, the phase shift adjustment film pattern 102p, and the semi-transparent film pattern 101p are formed by two photolithography processes using side etching. As a result, the number of photolithography processes in the manufacturing process of the multi-tone photomask 10 can be reduced. In other words, according to the present embodiment, by selecting materials for the semi-transparent film 101, the phase shift adjustment film 102, and the light shielding film 103, patterning is performed using the fact that side etching proceeds during wet etching. be able to. In the present embodiment, the three films are patterned by etching twice. In order to obtain this advantage, for example, the semi-transparent film 101 and the light-shielding film 103 are made of a material (for example, Cr-based) that can be etched by the same etchant, and the phase shift adjustment film 102 has resistance to the etchant. The material (for example, MoSi type) is used.

＜本発明の他の実施形態＞
続いて、本発明の他の実施形態を、図４、図５、及び図７を参照しながら説明する。図４は、本実施形態に係る多階調フォトマスク２０の部分断面図である。図５は、本実施形態に係る多階調フォトマスク２０の製造工程のフロー図である。図７は、本実施形態に係る多階調フォトマスク２０が備える転写用パターンの部分平面図である。 <Other Embodiments of the Present Invention>
Subsequently, another embodiment of the present invention will be described with reference to FIGS. 4, 5, and 7. FIG. 4 is a partial cross-sectional view of the multi-tone photomask 20 according to the present embodiment. FIG. 5 is a flowchart of the manufacturing process of the multi-tone photomask 20 according to this embodiment. FIG. 7 is a partial plan view of a transfer pattern provided in the multi-tone photomask 20 according to the present embodiment.

（１）多階調フォトマスクの構成
図４に示すように、本実施形態においては、遮光部１１０内における半透光部１１５と隣接する部分にも、位相シフト調整膜１０２が部分的に露出してなる第２の位相シフタ部１１２がさらに形成されている点が、上述の実施形態とは異なる。 (1) Configuration of Multi-tone Photomask As shown in FIG. 4, in the present embodiment, the phase shift adjustment film 102 is also partially exposed at a portion adjacent to the semi-transparent portion 115 in the light shielding portion 110. This is different from the above-described embodiment in that a second phase shifter portion 112 is further formed.

遮光部１１０と半透光部１１５との境界部分に形成された第２の位相シフタ部１１２は、第２の位相シフタ部１１２を透過する露光光の位相を所定の値だけシフトさせるように構成されている。具体的には、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が第２の位相シフタ部１１２を透過するときの位相シフト量と、上述の露光光が半透光部１１５を透過するときの位相シフト量と、の差が、９０度以上２７０度以内、より好ましくは１５０度以上２１０度以内となるように構成されている。これにより、半透光部１１５を透過して回折により第２の位相シフタ部１１２側へ進入した露光光と、第２の位相シフタ部１１２を透過した露光光と、が互い干渉して打ち消しあうこととなる。その結果、被転写体に形成されているレジスト膜に多階調フォトマスク１０を介して露光光を照射する際に、遮光部１１０と半透光部１１５との境界部分に対向するレジスト膜の感光を抑制でき、側壁形状がシャープである（急峻な立ち上がり形状を有する）レジストパターンを被転写体上に形成することが可能となる。   The second phase shifter unit 112 formed at the boundary between the light shielding unit 110 and the semi-translucent unit 115 is configured to shift the phase of the exposure light transmitted through the second phase shifter unit 112 by a predetermined value. Has been. Specifically, the amount of phase shift when exposure light having a representative wavelength in the range of i-line to g-line passes through the second phase shifter unit 112, and the above-described exposure light passes through the semi-translucent unit 115. The difference from the phase shift amount is 90 degrees or more and 270 degrees or less, more preferably 150 degrees or more and 210 degrees or less. As a result, the exposure light that has passed through the semi-transparent portion 115 and entered the second phase shifter portion 112 side by diffraction and the exposure light that has passed through the second phase shifter portion 112 interfere with each other and cancel each other. It will be. As a result, when the resist film formed on the transfer object is irradiated with the exposure light through the multi-tone photomask 10, the resist film facing the boundary portion between the light-shielding portion 110 and the semi-transparent portion 115. Photosensitivity can be suppressed, and a resist pattern having a sharp sidewall shape (having a steep rising shape) can be formed on the transfer target.

なお、第２の位相シフタ部１１２の幅（図７でいうＷ’）は、位相シフタ部（第１の位相シフタ部）１１１と同様に、１０ｎｍ以下１００μｍ以下、好ましくは１０ｎｍ以上１０００ｎｍ以下、さらに好ましくは５０ｎｍ以上５００ｎｍ以下とする。このような幅にすることで、上述の効果を得やすくなる。   Note that the width (W ′ in FIG. 7) of the second phase shifter portion 112 is 10 nm or less and 100 μm or less, preferably 10 nm or more and 1000 nm or less, similarly to the phase shifter portion (first phase shifter portion) 111. Preferably they are 50 nm or more and 500 nm or less. By using such a width, the above-described effect can be easily obtained.

図７は、本実施形態に係る多階調フォトマスク２０が備える転写用パターンの部分平面図である。本実施形態では、遮光部１１０と透光部１２０との境界部分に第１の位相シフタ部１１１が形成されているのに加え、遮光部１１０と半透光部１１５との境界部分に第２の位相シフタ部１１２が形成されている。   FIG. 7 is a partial plan view of a transfer pattern provided in the multi-tone photomask 20 according to the present embodiment. In the present embodiment, the first phase shifter unit 111 is formed at the boundary part between the light shielding part 110 and the light transmitting part 120, and the second phase is provided at the boundary part between the light shielding part 110 and the semi-transparent part 115. The phase shifter portion 112 is formed.

本実施形態によれば、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が第１の位相シフタ部１１１を透過するときの位相シフト量と、上述の露光光が透光部１２０を透過するときの位相シフト量と、の差が、１２０度以上２４０度以内、より好ましくは１５０度以上２１０度以内となるように構成されている。これにより、透光部１２０を透過して回折により位相シフタ部１１１側へ進入した露光光と、位相シフタ部１１１を透過した露光光と、が互いに干渉して打ち消しあうこととなる。これにより、半透光部１１５を透過して回折により第２の位相シフタ部１１２側へ進入した露光光と、第２の位相シフタ部１１２を透過した露光光と、が互いに干渉して打ち消しあうと共に、透光部１２０を透過して回折により第１の位相シフタ部１１１側へ進入した露光光と、第１の位相シフタ部１１１を透過した露光光が互いに干渉して打ち消しあう。その結果、被転写体に形成されているレジスト膜に多階調フォトマスク２０を介して露光光を照射する際に、遮光部１１０と透光部１２０との境界部分に対向するレジスト膜の感光と、遮光部１１０と半透光部１１５との境界部分に対向するレジスト膜の感光との両方を抑制でき、それぞれの境界において側壁形状がシャープである（急峻な立ち上がり形状を有する）レジストパターンを被転写体上に形成することが可能となる。   According to the present embodiment, the amount of phase shift when exposure light having a representative wavelength in the range of i-line to g-line passes through the first phase shifter unit 111, and the above-described exposure light passes through the translucent unit 120. The difference from the phase shift amount when transmitting is 120 degrees or more and 240 degrees or less, more preferably 150 degrees or more and 210 degrees or less. As a result, the exposure light transmitted through the light transmitting portion 120 and entering the phase shifter portion 111 side by diffraction and the exposure light transmitted through the phase shifter portion 111 interfere with each other and cancel each other. As a result, the exposure light that has passed through the semi-transparent portion 115 and entered the second phase shifter portion 112 side by diffraction and the exposure light that has passed through the second phase shifter portion 112 interfere with each other and cancel each other. At the same time, the exposure light that has passed through the light transmitting portion 120 and entered the first phase shifter portion 111 side by diffraction and the exposure light that has passed through the first phase shifter portion 111 interfere with each other and cancel each other. As a result, when the resist film formed on the transfer object is irradiated with the exposure light through the multi-tone photomask 20, the resist film facing the boundary portion between the light shielding portion 110 and the light transmitting portion 120 is exposed. And resist of the resist film facing the boundary portion between the light-shielding portion 110 and the semi-transparent portion 115, and a resist pattern having a sharp sidewall shape (having a steep rising shape) at each boundary. It can be formed on the transfer object.

また、上述の露光光が半透光部１１５を透過するときの位相シフト量と、上述の露光光が透光部１２０を透過するときの位相シフト量と、の差が、−６０度以上６０度以内、より好ましくは−３０度以上３０度以内となるように構成されている。これにより、透光部１２０を透過した露光光と、半透光部１１５を透過した露光光とが互いに干渉して打ち消しあうことを抑制することができる。その結果、被転写体に形成されているレジスト膜に多階調フォトマスク１０を介して露光光を照射する際に、半透光部１１５と透光部１２０との境界部分に不要な暗部が生じず、レジスト膜をより確実に感光させることができる。   Further, the difference between the phase shift amount when the exposure light passes through the semi-transparent portion 115 and the phase shift amount when the exposure light passes through the translucent portion 120 is -60 degrees or more and 60. It is comprised so that it may become within 30 degree | times, More preferably, -30 degree | times or more and 30 degree | times or less. Thereby, it is possible to suppress the exposure light transmitted through the translucent part 120 and the exposure light transmitted through the semi-transparent part 115 from interfering with each other and canceling each other. As a result, when the resist film formed on the transfer object is irradiated with exposure light through the multi-tone photomask 10, an unnecessary dark portion is formed at the boundary between the semi-transparent portion 115 and the translucent portion 120. It does not occur and the resist film can be more reliably exposed.

また、図８に示すように、遮光部１１０と半透光部１１５との境界部分のみに位相シフタ部を設けることも出来る。このようにすれば、遮光部１１０と半透光部１１５との境界部分の対向するレジスト膜の感光を抑制でき、この境界部分の側壁形状がシャープである（急峻な立ち上がり形状を有する）レジストパターンを被転写体上に形成することが可能となる。   Further, as shown in FIG. 8, a phase shifter portion can be provided only at the boundary portion between the light shielding portion 110 and the semi-translucent portion 115. In this way, it is possible to suppress the exposure of the resist film facing the boundary portion between the light shielding portion 110 and the semi-transparent portion 115, and the resist pattern having a sharp sidewall shape (having a steep rising shape). Can be formed on the transfer object.

（２）多階調フォトマスクの製造方法
このような構成を持つ多階調フォトマスク２０の製造方法について、図５を参照して説明する。 (2) Manufacturing Method of Multi-tone Photomask A manufacturing method of the multi-tone photomask 20 having such a configuration will be described with reference to FIG.

（フォトマスクブランク準備工程）
まず、図５（ａ）に例示するように、透明基板１００上に半透光膜１０１、位相シフト調整膜１０２、遮光膜１０３がこの順に形成され、最上層に第１レジスト膜１０４が形成されたフォトマスクブランク１０ｂを準備する。各部材の材料、厚さ等は、各部材の光学特性等が上述の条件を満たすように、上記の実施形態と同様に選択する。 (Photomask blank preparation process)
First, as illustrated in FIG. 5A, a semi-transparent film 101, a phase shift adjustment film 102, and a light shielding film 103 are formed in this order on a transparent substrate 100, and a first resist film 104 is formed as the uppermost layer. A photomask blank 10b is prepared. The material, thickness, and the like of each member are selected in the same manner as in the above embodiment so that the optical characteristics and the like of each member satisfy the above-described conditions.

（第１レジストパターン形成工程）
次に、フォトマスクブランク１０ｂに対して、上述の実施形態と同様の手法で露光・現像を施し、遮光部１１０の形成予定領域を覆う第１レジストパターン１０４ｐを形成する。 (First resist pattern forming step)
Next, the photomask blank 10b is exposed and developed in the same manner as in the above-described embodiment to form a first resist pattern 104p that covers a region where the light shielding unit 110 is to be formed.

（第１エッチング工程）
次に、形成した第１レジストパターン１０４ｐをマスクとして、上述の実施形態と同様の手法で遮光膜１０３をエッチングし、遮光膜パターン１０３ｐを形成する。このとき、下地の位相シフト調整膜１０２はエッチングストッパ層として機能する。遮光膜パターン１０３ｐが形成された状態を、図５（ｂ）に例示する。 (First etching process)
Next, using the formed first resist pattern 104p as a mask, the light shielding film 103 is etched by the same method as in the above-described embodiment to form the light shielding film pattern 103p. At this time, the underlying phase shift adjustment film 102 functions as an etching stopper layer. FIG. 5B illustrates a state where the light shielding film pattern 103p is formed.

（第２レジスト膜形成工程）
次に、第１レジストパターン１０４ｐを除去した後、遮光膜パターン１０３ｐ及び露出した位相シフト調整膜１０２を有するフォトマスクブランク１０ｂ上の全面に、第２レジスト膜１０５を形成する。第１レジストパターン１０４ｐの除去、第２レジスト膜１０５の形成には、上述の実施形態と同様の手法を用いることができる。 (Second resist film forming step)
Next, after removing the first resist pattern 104p, a second resist film 105 is formed on the entire surface of the photomask blank 10b having the light shielding film pattern 103p and the exposed phase shift adjustment film 102. For removal of the first resist pattern 104p and formation of the second resist film 105, the same technique as in the above-described embodiment can be used.

（第２レジストパターン形成工程）
次に、上述の実施形態と同様の手法で、第２レジスト膜１０５を露光・現像し、遮光部１１０の形成予定領域、遮光部１１０と透光部１２０との境界部分に位置する第１の位相シフタ部１１１の形成予定領域、および遮光部１１０と半透光部１１５との境界部分に位置する第２の位相シフタ部１１２の形成予定領域をそれぞれ覆う第２レジストパターン１０５ｐを形成する。第２レジストパターン１０５ｐが形成された状態を図５（ｃ）に例示する。 (Second resist pattern forming step)
Next, the second resist film 105 is exposed and developed in the same manner as in the above-described embodiment, and the first region located in the region where the light shielding unit 110 is to be formed and the boundary between the light shielding unit 110 and the light transmitting unit 120 is formed. A second resist pattern 105p is formed to cover the region where the phase shifter unit 111 is to be formed and the region where the second phase shifter unit 112 is to be formed, which is located at the boundary between the light shielding unit 110 and the semi-translucent unit 115. A state in which the second resist pattern 105p is formed is illustrated in FIG.

（第２エッチング工程）
次に、形成した第２レジストパターン１０５ｐをマスクとして、上述の実施形態と同様の手法で位相シフト調整膜１０２をエッチングして位相シフト調整膜パターン１０２ｐを形成するとともに、半透光部１１５と第１の位相シフタ部１１１と第２の位相シフタ部１１２とを形成する。第２エッチング工程が実施された状態を、図５（ｄ）に例示する。 (Second etching process)
Next, using the formed second resist pattern 105p as a mask, the phase shift adjustment film 102 is formed by etching the phase shift adjustment film 102 in the same manner as in the above embodiment, and the semi-translucent portion 115 and the first One phase shifter portion 111 and a second phase shifter portion 112 are formed. A state in which the second etching step is performed is illustrated in FIG.

（第３レジスト膜形成工程）
そして、第２レジストパターン１０５ｐを除去した後、遮光膜パターン１０３ｐ、位相シフト調整膜パターン１０２ｐ、露出した半透光膜１０１を有するフォトマスクブランク１０ｂ上の全面に、第３レジスト膜１０６を形成する。第２レジストパターン１０５ｐの除去、第３レジスト膜１０６の形成には、上述の実施形態と同様の手法を用いることができる。 (Third resist film forming step)
Then, after removing the second resist pattern 105p, a third resist film 106 is formed on the entire surface of the photomask blank 10b having the light shielding film pattern 103p, the phase shift adjustment film pattern 102p, and the exposed semi-transparent film 101. . For the removal of the second resist pattern 105p and the formation of the third resist film 106, the same technique as in the above-described embodiment can be used.

（第３レジストパターン形成工程）
次に、上述の実施形態と同様の手法で、第３レジスト膜１０６を露光・現像し、透光部１２０の形成予定領域を除く領域を覆う第３レジストパターン１０６ｐを形成する。なお、透光部１２０の形成予定領域を除く領域とは、遮光部１１０の形成予定領域、第１の位相シフタ部１１１の形成予定領域、第２の位相シフタ部１１２の形成予定領域、及び半透光部１１５の形成予定領域である。第３レジストパターン１０６ｐが形成された状態を図５（ｅ）に例示する。 (Third resist pattern forming step)
Next, the third resist film 106 is exposed and developed by the same method as in the above-described embodiment to form a third resist pattern 106p that covers a region excluding the region where the translucent portion 120 is to be formed. The areas excluding the formation region of the translucent part 120 are the formation area of the light shielding part 110, the formation area of the first phase shifter 111, the formation area of the second phase shifter 112, and the half. This is a region where the translucent part 115 is to be formed. FIG. 5E illustrates a state where the third resist pattern 106p is formed.

（第３エッチング工程）
次に、形成した第３レジストパターン１０６ｐをマスクとして上述の実施形態と同様の手法で半透光膜１０１をエッチングして半透光膜パターン１０１ｐを形成すると共に、透明基板１００を部分的に露出させて透光部１００を形成する。第３エッチング工程が実施された状態を図５（ｆ）に例示する。 (Third etching step)
Next, using the formed third resist pattern 106p as a mask, the semi-transparent film 101 is etched by the same method as in the above-described embodiment to form the semi-transparent film pattern 101p, and the transparent substrate 100 is partially exposed. Thus, the translucent part 100 is formed. FIG. 5F illustrates the state where the third etching step has been performed.

（第３レジストパターン除去工程）
次に、上述の実施形態と同様の手法で、第３レジストパターン１０６ｐを除去し、本実施形態に係る多階調フォトマスク２０の製造を完了する。第３レジストパターン１０６ｐの除去には、上述の実施形態と同様の手法を用いることができる。第３レジストパターンを除去した状態を図５（ｇ）に例示する。 (Third resist pattern removal step)
Next, the third resist pattern 106p is removed by the same method as in the above-described embodiment, and the manufacture of the multi-tone photomask 20 according to this embodiment is completed. For removal of the third resist pattern 106p, the same technique as in the above-described embodiment can be used. FIG. 5G illustrates a state where the third resist pattern is removed.

本実施形態に係る多階調フォトマスク２０においても、上述の実施形態に係る多階調フォトマスク１０と同様の効果を奏する。   The multi-tone photomask 20 according to the present embodiment also has the same effect as the multi-tone photomask 10 according to the above-described embodiment.

さらに、本実施形態によれば、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が第２の位相シフタ部１１２を透過するときの位相シフト量と、上述の露光光が半透光部１１５を透過するときの位相シフト量と、の差が、９０度以上２７０度以内、より好ましくは１５０度以上２１０度以内となるように構成されている。これにより、半透光部１１５を透過して回折により第２の位相シフタ部１１２側へ進入した露光光と、第２の位相シフタ部１１２を透過した露光光と、が互いに干渉して打ち消しあうこととなる。その結果、被転写体に形成されているレジスト膜に多階調フォトマスク２０を介して露光光を照射する際に、遮光部１１０と半透光部１１５との境界部分に対向するレジスト膜の感光を抑制でき、側壁形状がシャープである（急峻な立ち上がり形状を有する）レジストパターンを被転写体上に形成することが可能となる。   Furthermore, according to the present embodiment, the phase shift amount when the exposure light having a representative wavelength in the range of i-line to g-line is transmitted through the second phase shifter unit 112, and the above-described exposure light is semi-translucent. The difference between the phase shift amount when passing through the portion 115 is 90 degrees or more and 270 degrees or less, and more preferably 150 degrees or more and 210 degrees or less. As a result, the exposure light that has passed through the semi-transparent portion 115 and entered the second phase shifter portion 112 side by diffraction and the exposure light that has passed through the second phase shifter portion 112 interfere with each other and cancel each other. It will be. As a result, when the resist film formed on the transfer object is irradiated with exposure light through the multi-tone photomask 20, the resist film facing the boundary portion between the light shielding portion 110 and the semi-translucent portion 115 is exposed. Photosensitivity can be suppressed, and a resist pattern having a sharp sidewall shape (having a steep rising shape) can be formed on the transfer target.

＜本発明のさらに他の実施形態＞
さらに、本発明の他の実施形態を、図９を参照しながら説明する。図９は本実施形態に係る多階調フォトマスクの部分断面図と、このフォトマスクを透過した露光光の振幅強度曲線ならびに光強度分曲線と、被転写体に形成されるレジストパターンの断面図を示し、それぞれの関係を表したものである。 <Still another embodiment of the present invention>
Furthermore, another embodiment of the present invention will be described with reference to FIG. FIG. 9 is a partial cross-sectional view of a multi-tone photomask according to the present embodiment, an amplitude intensity curve and a light intensity distribution curve of exposure light transmitted through the photomask, and a cross-sectional view of a resist pattern formed on a transfer target And shows the relationship between them.

遮光部１１０と半透光部１１５の境界に第２の位相シフタ部１１２を有する本発明のフォトマスクにおいて、第２の位相シフタ部１１２を透過したことにより、半透光部１１５に対して位相差が９０度以上２７０以内である露光光の振幅強度と、半透光部１１５及び透光部１２０を透過した露光光の振幅強度とを点線で示す。さらに、これらの露光光を合成し光強度としたものを、実線で示す。   In the photomask of the present invention having the second phase shifter portion 112 at the boundary between the light shielding portion 110 and the semi-translucent portion 115, the second phase shifter portion 112 has passed through the second phase shifter portion 112. A dotted line indicates the amplitude intensity of the exposure light having a phase difference of 90 degrees or more and 270 or less and the amplitude intensity of the exposure light transmitted through the semi-translucent portion 115 and the translucent portion 120. Further, the light intensity obtained by combining these exposure lights is shown by a solid line.

光強度曲線の（Ａ）部分には、第２の位相シフタ部１１２を透過した露光光と半透光部を透過した露光光が干渉によって打ち消され光強度が減少している部分が示されており、光強度曲線の（Ｂ）部分には、第２の位相シフタ部１１２を透過した露光光が示されている。位相シフタの幅が１０００ｎｍを超えると、それ以下の線幅の時に生じていた回折の影響による透過率の低下が生じ難くなり、位相シフタ部を透過した露光光における（Ｂ）部分の光強度が大きくなってしまう場合（図中の閾値以上）、レジストが感光することによって、レジストに不要な膜厚の変化を与えてしまうようになる。したがって、この影響を防ぐためには位相シフタ部の透過率は、露光光が位相シフト効果を有する強度範囲でなるべく低いことが望ましい。また、光が全く透過しなければ、本発明の作用は生じないことから、例えば、位相シフタ部１１２の透過率は５％以上２０％以下とすることが出来る。より好適には５％以上１０％以下であることが望ましい。このようにすることによって幅が１０００ｎｍを超えるような位相シフタ部においても、位相シフタ部を透過した露光光によって感光したレジストの領域（Ｂ）を、実質上遮光部に対応するレジストの領域との間に、厚さのばらつきを生じることがなくなる。   The part (A) of the light intensity curve shows a part where the exposure light transmitted through the second phase shifter 112 and the exposure light transmitted through the semi-transparent part are canceled by interference and the light intensity is reduced. In the light intensity curve (B), the exposure light transmitted through the second phase shifter 112 is shown. When the width of the phase shifter exceeds 1000 nm, it becomes difficult for the transmittance to decrease due to the influence of diffraction that occurred when the line width was less than that, and the light intensity of the (B) portion in the exposure light transmitted through the phase shifter portion is When it becomes large (more than the threshold value in the figure), the resist is exposed to light, so that an unnecessary change in film thickness is given to the resist. Therefore, in order to prevent this influence, it is desirable that the transmittance of the phase shifter portion is as low as possible in the intensity range in which the exposure light has a phase shift effect. Further, if the light is not transmitted at all, the action of the present invention does not occur. For example, the transmittance of the phase shifter portion 112 can be 5% or more and 20% or less. More preferably, it is 5% or more and 10% or less. Thus, even in the phase shifter portion having a width exceeding 1000 nm, the resist region (B) exposed by the exposure light transmitted through the phase shifter portion is substantially different from the resist region corresponding to the light shielding portion. In the meantime, no variation in thickness occurs.

したがって、本発明の位相シフタ部は、遮光部と半透光部の境界、または遮光部と透光部の境界にあって、本発明のフォトマスクを用いてパターン転写を行う時には、遮光部と実質上同等の遮光性を有する。したがって、フォトマスクのパターン設計時には、位相シフト部を遮光部と同等の遮光性を有する領域とすることが出来、位相シフト部の幅を増やす時には、その分遮光部の幅を減じることが必要である。   Therefore, the phase shifter portion of the present invention is located at the boundary between the light shielding portion and the semi-translucent portion, or the boundary between the light shielding portion and the light transmitting portion, and when performing pattern transfer using the photomask of the present invention, It has substantially the same light shielding properties. Therefore, when designing the pattern of the photomask, the phase shift part can be made to have a light shielding property equivalent to that of the light shielding part, and when the width of the phase shift part is increased, it is necessary to reduce the width of the light shielding part accordingly. is there.

なお、この場合の位相シフタ部の幅は、パターン設計の容易さや、プロセスのしやすさ等から考慮して、１０ｎｍ以上１００μｍ以下とすることが出来る。   In this case, the width of the phase shifter portion can be set to 10 nm or more and 100 μm or less in consideration of ease of pattern design, ease of process, and the like.

したがって、本発明のフォトマスクは、位相シフタ部が遮光部と同等の遮光性を有するので、位相シフタ部を遮光性のパターンとしてフォトマスクパターンの設計をすることが出来る。   Therefore, in the photomask of the present invention, since the phase shifter portion has the same light shielding property as the light shielding portion, the photomask pattern can be designed with the phase shifter portion as the light shielding pattern.

また、遮光部と透過光の境界に設けた位相シフタ部についても、遮光部と半透光部の境界に設けた位相シフタ部と同様に扱うことが出来る。このときも例えば、位相シフタ部の透過率は５％以上２０％以下とすることが望ましく、より好適には透過率は５％以上１０％以下であることが望ましい。   Further, the phase shifter provided at the boundary between the light shielding part and the transmitted light can be handled in the same manner as the phase shifter provided at the boundary between the light shielding part and the semi-transparent part. Also at this time, for example, the transmittance of the phase shifter portion is desirably 5% or more and 20% or less, and more desirably, the transmittance is 5% or more and 10% or less.

以上、本発明の実施形態を具体的に説明したが、本発明は上述の実施形態に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可能である。 As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

１０、２０ 多階調フォトマスク
１００ 透明基板
１０１ 半透光膜
１０２ 位相シフト調整膜
１０３ 遮光膜
１１０ 遮光部
１１１ 位相シフタ部（第１の位相シフタ部）
１１２ 第２の位相シフタ部
１１５ 半透光部
１２０ 透光部 10, 20 Multi-gradation photomask 100 Transparent substrate 101 Semi-transparent film 102 Phase shift adjustment film 103 Light-shielding film 110 Light-shielding part 111 Phase shifter part (first phase shifter part)
112 2nd phase shifter part 115 Semi-translucent part 120 Translucent part

Claims (13)

遮光部、半透光部、及び透光部を含む所定の転写用パターンが透明基板上に形成された多階調フォトマスクであって、
前記遮光部は、半透光膜、位相シフト調整膜、及び遮光膜が前記透明基板上にこの順に積層されてなり、
前記半透光部は、前記半透光膜が前記透明基板上に形成されてなり、
前記透光部は、前記透明基板が露出してなり、
前記遮光部と前記透光部との境界、または前記遮光部と前記半透光部の境界には、前記半透光膜上の前記位相シフト調整膜が部分的に露出してなる位相シフタ部が形成され、
前記遮光部と前記透光部の境界に前記位相シフタ部が形成されるとき、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が、前記位相シフタ部を透過する時の位相シフト量と、前記露光光が、前記透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となり、
前記遮光部と前記半透光部の境界に前記位相シフタ部が形成されるとき、ｉ線〜ｇ線の範囲内の代表波長を有する露光光が、前記位相シフタ部を透過する時の位相シフト量と、前記露光光が、前記半透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となることを特徴とする多階調フォトマスク。 A multi-tone photomask in which a predetermined transfer pattern including a light shielding portion, a semi-transparent portion, and a translucent portion is formed on a transparent substrate,
The light shielding portion is formed by laminating a semi-transparent film, a phase shift adjustment film, and a light shielding film in this order on the transparent substrate,
The semi-transparent portion is formed by forming the semi-transparent film on the transparent substrate,
The translucent part is formed by exposing the transparent substrate,
A phase shifter part in which the phase shift adjustment film on the semi-transparent film is partially exposed at the boundary between the light-shielding part and the translucent part or at the boundary between the light-shielding part and the semi-translucent part Formed,
When the phase shifter portion is formed at the boundary between the light shielding portion and the light transmitting portion, the amount of phase shift when exposure light having a representative wavelength within the range of i-line to g-line is transmitted through the phase shifter portion And the difference between the exposure light and the phase shift amount when passing through the light transmitting portion is 90 degrees or more and 270 degrees or less,
When the phase shifter part is formed at the boundary between the light shielding part and the semi-translucent part, the phase shift when exposure light having a representative wavelength in the range of i-line to g-line is transmitted through the phase shifter part A multi-tone photomask, wherein a difference between the amount and a phase shift amount when the exposure light passes through the semi-translucent portion is 90 degrees or more and 270 degrees or less. 遮光部、半透光部、及び透光部を含む所定の転写用パターンが透明基板上に形成された
多階調フォトマスクであって、
前記遮光部は、半透光膜、位相シフト調整膜、及び遮光膜が前記透明基板上にこの順に
積層されてなり、
前記半透光部は、前記半透光膜が前記透明基板上に形成されてなり、
前記透光部は、前記透明基板が露出してなり、
前記遮光部と前記透光部との境界部分には、前記半透光膜上の前記位相シフト調整膜が
部分的に露出してなる位相シフタ部が形成され、
ｉ線〜ｇ線の範囲内の代表波長を有する露光光が前記位相シフタ部を透過するときの位
相シフト量と、前記露光光が前記透光部を透過するときの位相シフト量と、の差が９０度
以上２７０度以内となる
ことを特徴とする多階調フォトマスク。 A multi-tone photomask in which a predetermined transfer pattern including a light shielding portion, a semi-transparent portion, and a translucent portion is formed on a transparent substrate,
The light shielding portion is formed by laminating a semi-transparent film, a phase shift adjustment film, and a light shielding film in this order on the transparent substrate,
The semi-transparent portion is formed by forming the semi-transparent film on the transparent substrate,
The translucent part is formed by exposing the transparent substrate,
At the boundary part between the light shielding part and the light transmitting part, a phase shifter part formed by partially exposing the phase shift adjusting film on the semi-transparent film is formed,
Difference between the amount of phase shift when exposure light having a representative wavelength in the range of i-line to g-line is transmitted through the phase shifter part and phase shift amount when the exposure light is transmitted through the light-transmitting part A multi-tone photomask characterized by having an angle between 90 degrees and 270 degrees. 前記位相シフタ部の幅が１０ｎｍ以上１０００ｎｍ以下である
ことを特徴とする請求項１又は２に記載の多階調フォトマスク。 3. The multi-tone photomask according to claim 1, wherein a width of the phase shifter portion is not less than 10 nm and not more than 1000 nm. 前記位相シフタ部は、前記遮光膜のサイドエッチングにより形成されたものであり、
前記位相シフタ部の幅は１０ｎｍ以上５００ｎｍ以下であることを特徴とする請求項１乃至３のいずれかに記載の多階調フォトマスク。 The phase shifter portion is formed by side etching of the light shielding film,
4. The multi-tone photomask according to claim 1, wherein a width of the phase shifter portion is not less than 10 nm and not more than 500 nm. 前記位相シフタ部の前記露光光の透過率は５％以上２０％以下であることを特徴とする請求項１乃至４のいずれかに記載の多階調フォトマスク。   The multi-tone photomask according to any one of claims 1 to 4, wherein the exposure light transmittance of the phase shifter portion is 5% or more and 20% or less. 前記遮光部と前記半透光部との境界部分には、前記半透光膜上の前記位相シフト調整膜
が部分的に露出してなる第２の位相シフタ部が形成され、
前記露光光が前記第２の位相シフタ部を透過するときの位相シフト量と、前記露光光が
前記半透光部を透過するときの位相シフト量と、の差が９０度以上２７０度以内となる
ことを特徴とする請求項１から５のいずれかに記載の多階調フォトマスク。 A second phase shifter part formed by partially exposing the phase shift adjustment film on the semi-transparent film is formed at a boundary part between the light shielding part and the semi-translucent part,
The difference between the phase shift amount when the exposure light is transmitted through the second phase shifter portion and the phase shift amount when the exposure light is transmitted through the semi-transparent portion is 90 degrees or more and 270 degrees or less. The multi-tone photomask according to claim 1, wherein: 前記露光光が前記半透光部を透過するときの位相シフト量と、前記露光光が前記透光部
を透過するときの位相シフト量と、の差が６０度未満である
ことを特徴とする請求項１から６のいずれかに記載の多階調フォトマスク。 The difference between the phase shift amount when the exposure light passes through the semi-translucent portion and the phase shift amount when the exposure light passes through the translucent portion is less than 60 degrees. The multi-tone photomask according to claim 1. 遮光部、透光部、及び半透光部を含む所定の転写用パターンを透明基板上に形成する多
階調フォトマスクの製造方法であって、
半透光膜、位相シフト調整膜、遮光膜、及び第１レジスト膜が前記透明基板上にこの順
に積層されたフォトマスクブランクを用意する工程と、
前記第１レジスト膜に描画および現像を施し、少なくとも前記遮光部の形成予定領域を
覆う第１レジストパターンを形成する工程と、
前記第１レジストパターンをマスクとして前記遮光膜及び前記位相シフト調整膜をエッ
チングする第１エッチング工程と、
前記第１レジストパターンを除去したのち、前記第１エッチング工程の行われた前記フ
ォトマスクブランク上に第２レジスト膜を形成する工程と、
前記第２レジスト膜に描画および現像を施し、少なくとも前記遮光部の形成予定領域及
び前記半透光部の形成予定領域を覆う第２レジストパターンを形成する工程と、
前記第２レジストパターンをマスクとして前記半透光膜をエッチングすると共に、前記
遮光膜の側部をエッチングして前記位相シフト調整膜を部分的に露出させて位相シフタ部
を形成する第２エッチング工程と、
前記第２レジストパターンを除去する工程と、を有し、
ｉ線〜ｇ線の範囲内の代表波長を有する露光光が前記位相シフタ部を透過するときの位
相シフト量と、前記露光光が前記透光部を透過するときの位相シフト量と、の差が９０度
以上２７０度以内となる
ことを特徴とする多階調フォトマスクの製造方法。 A method for manufacturing a multi-tone photomask, wherein a predetermined transfer pattern including a light-shielding part, a light-transmitting part, and a semi-light-transmitting part is formed on a transparent substrate,
A step of preparing a photomask blank in which a semi-transparent film, a phase shift adjustment film, a light shielding film, and a first resist film are laminated in this order on the transparent substrate;
Drawing and developing the first resist film, and forming a first resist pattern that covers at least a region where the light shielding part is to be formed;
A first etching step of etching the light-shielding film and the phase shift adjustment film using the first resist pattern as a mask;
Forming a second resist film on the photomask blank subjected to the first etching step after removing the first resist pattern;
Drawing and developing the second resist film, and forming a second resist pattern that covers at least the formation planned region of the light-shielding portion and the formation planned region of the semi-translucent portion;
A second etching step of etching the semi-transparent film using the second resist pattern as a mask and etching a side portion of the light shielding film to partially expose the phase shift adjustment film to form a phase shifter portion; When,
Removing the second resist pattern,
Difference between the amount of phase shift when exposure light having a representative wavelength in the range of i-line to g-line is transmitted through the phase shifter part and phase shift amount when the exposure light is transmitted through the light-transmitting part The method of manufacturing a multi-tone photomask, wherein the angle is 90 degrees or more and 270 degrees or less. 遮光部、透光部、及び半透光部を含む所定の転写用パターンを透明基板上に形成する多
階調フォトマスクの製造方法であって、
半透光膜、位相シフト調整膜、遮光膜、及び第１レジスト膜が前記透明基板上にこの順
に積層されたフォトマスクブランクを用意する工程と、
前記第１レジスト膜に描画および現像を施し、前記遮光部の形成予定領域を覆う第１レ
ジストパターンを形成する工程と、
前記第１レジストパターンをマスクとして前記遮光膜をエッチングする第１エッチング
工程と、
前記第１レジストパターンを除去したのち、前記第１エッチング工程の行われた前記フ
ォトマスクブランク上に第２レジスト膜を形成する工程と、
前記第２レジスト膜に描画および現像を施し、前記遮光部の形成予定領域と、前記遮光
部と前記透光部との境界部分に位置する位相シフタ部の形成予定領域と、を覆う第２レジ
ストパターンを形成する工程と、
前記第２レジストパターンをマスクとして前記位相シフト調整膜をエッチングして前記
半透光部と前記位相シフタ部とを形成する第２エッチング工程と、
前記第２レジストパターンを除去したのち、前記第２エッチング工程の行われた前記フ
ォトマスクブランク上に第３レジスト膜を形成する工程と、
前記第３レジスト膜に描画および現像を施し、前記透光部の形成予定領域を除く領域を
覆う第３レジストパターンを形成する工程と、
前記第３レジストパターンをマスクとして前記半透光膜をエッチングする第３エッチン
グ工程と、
前記第３レジストパターンを除去する工程と、を有し、
ｉ線〜ｇ線の範囲内の代表波長を有する露光光が前記位相シフタ部を透過するときの位
相シフト量と、前記露光光が前記透光部を透過するときの位相シフト量と、の差が９０度
以上２７０度以内となる
ことを特徴とする多階調フォトマスクの製造方法。 A method for manufacturing a multi-tone photomask, wherein a predetermined transfer pattern including a light-shielding part, a light-transmitting part, and a semi-light-transmitting part is formed on a transparent substrate,
A step of preparing a photomask blank in which a semi-transparent film, a phase shift adjustment film, a light shielding film, and a first resist film are laminated in this order on the transparent substrate;
Drawing and developing the first resist film, and forming a first resist pattern that covers a region where the light shielding portion is to be formed;
A first etching step of etching the light-shielding film using the first resist pattern as a mask;
Forming a second resist film on the photomask blank subjected to the first etching step after removing the first resist pattern;
The second resist film is drawn and developed to cover a region where the light shielding part is to be formed and a region where the phase shifter part is to be formed located at the boundary between the light shielding part and the light transmitting part Forming a pattern;
Etching the phase shift adjustment film using the second resist pattern as a mask to form the semi-translucent portion and the phase shifter portion; and
Forming a third resist film on the photomask blank subjected to the second etching step after removing the second resist pattern;
Drawing and developing the third resist film, and forming a third resist pattern covering a region excluding a region where the light-transmitting portion is to be formed;
A third etching step of etching the semi-translucent film using the third resist pattern as a mask;
Removing the third resist pattern,
Difference between the amount of phase shift when exposure light having a representative wavelength in the range of i-line to g-line is transmitted through the phase shifter part and phase shift amount when the exposure light is transmitted through the light-transmitting part The method of manufacturing a multi-tone photomask, wherein the angle is 90 degrees or more and 270 degrees or less. 前記第２レジストパターンを形成する前記工程では、前記遮光部と前記半透光部との境
界部分に位置する第２の位相シフタ部の形成予定領域を覆う前記第２レジストパターンを
形成し、
前記第２エッチング工程では、前記第２の位相シフタ部を形成し、
ｉ線〜ｇ線の範囲内の代表波長を有する露光光が前記第２の位相シフタ部を透過すると
きの位相シフト量と、前記露光光が前記半透光部を透過するときの位相シフト量と、の差
が９０度以上２７０度以内となる
ことを特徴とする請求項９に記載の多階調フォトマスクの製造方法。 In the step of forming the second resist pattern, the second resist pattern is formed so as to cover a formation planned region of the second phase shifter portion located at a boundary portion between the light shielding portion and the semi-translucent portion,
In the second etching step, the second phase shifter portion is formed,
Phase shift amount when exposure light having a representative wavelength in the range of i-line to g-line passes through the second phase shifter portion, and phase shift amount when the exposure light passes through the semi-translucent portion The method of manufacturing a multi-tone photomask according to claim 9, wherein the difference is 90 degrees or more and 270 degrees or less. 前記位相シフト調整膜が、前記遮光膜及び前記半透光膜のエッチングに用いるエッチン
グ液又はエッチングガスに対して耐性を有する
ことを特徴とする請求項８から１０のいずれかに記載の多階調フォトマスクの製造方法。 11. The multi-tone according to claim 8, wherein the phase shift adjustment film has resistance to an etching solution or an etching gas used for etching the light shielding film and the semi-translucent film. Photomask manufacturing method. 請求項１から７のいずれかに記載の多階調フォトマスク、又は請求項８から１１のいずれかに記載の製造方法による多階調フォトマスクを介し、被転写体上に形成されているレジスト膜に前記露光光を照射することにより、前記レジスト膜に前記転写用パターンを転写する工程を有する
ことを特徴とするパターン転写方法。 A resist formed on a transfer medium through the multi-tone photomask according to any one of claims 1 to 7 or the multi-tone photomask by the manufacturing method according to any one of claims 8 to 11. A pattern transfer method comprising a step of transferring the transfer pattern onto the resist film by irradiating the film with the exposure light. 前記被転写体上に形成されている前記レジスト膜は、前記位相シフタ部に対応する部分
の露光光に対して実質的に感度を有さない
ことを特徴とする請求項１２に記載のパターン転写方法。 13. The pattern transfer according to claim 12, wherein the resist film formed on the transfer object has substantially no sensitivity to exposure light corresponding to the phase shifter portion. Method.
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