JPH07295205A - Manufacture of lithography mask - Google Patents
Manufacture of lithography maskInfo
- Publication number
- JPH07295205A JPH07295205A JP11023794A JP11023794A JPH07295205A JP H07295205 A JPH07295205 A JP H07295205A JP 11023794 A JP11023794 A JP 11023794A JP 11023794 A JP11023794 A JP 11023794A JP H07295205 A JPH07295205 A JP H07295205A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- light shielding
- shielding layer
- lithographic mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、位相反転マスクに関
し、特に半導体ウェーハの解像度の改善に適合するよう
にしたマスクの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phase shift mask, and more particularly to a mask manufacturing method adapted to improve the resolution of a semiconductor wafer.
【０００２】[0002]
【従来の技術】最近、半導体素子が高集積化されたり、
パッケージ密度が高まったりするにつれて、微細な線幅
を有するようにする技術が求められる。従って、微細な
線幅を有するためのフォトリソグラフイマスクの製造方
法が活発に研究開発されている。2. Description of the Related Art Recently, semiconductor devices have been highly integrated,
As the package density increases, a technique for achieving a fine line width is required. Therefore, a method of manufacturing a photolithographic mask having a fine line width has been actively researched and developed.
【０００３】一般的にフォトリソグラフイマスクは、フ
ォトマスクに紫外線領域の波長を透過させて半導体基板
に塗布されたフォトレジストの表面にイメージパターン
を形成する技術である。前記のフォトマスクは、不透過
パターンと透過パターンとから構成され、紫外線領域の
波長を選択的に透過させる。ところが、このフォトリソ
グラフイでは、パターン密度の増加により、回折現象が
発生して解像度に制限を与える。Generally, a photolithographic mask is a technique for forming an image pattern on the surface of a photoresist applied to a semiconductor substrate by transmitting a wavelength in the ultraviolet region through the photomask. The photomask is composed of an opaque pattern and a transmissive pattern, and selectively transmits wavelengths in the ultraviolet region. However, in this photolithography, an increase in pattern density causes a diffraction phenomenon to limit the resolution.
【０００４】このような不都合を解決するための方法と
しては、位相反転マスクを用いたフォトリソグラフイ方
法がある。位相反転マスクとは、投光領域を一般投光領
域と１８０°位相遷移された投光領域の組合わせを用い
る方法であって、遮光領域で投光領域間の相殺干渉現象
が生じるようにして光の回折現象を防ぐ。なお、位相反
転マスクのリソグラフイ技術は、マスクを透過する光の
強さを鋭利に変調させ、パターンイメージをマスクイメ
ージに近くすることが出来る。そして、一層複雑なパタ
ーンも転写できるように、様々な位相反転マスクが開発
されている。As a method for solving such inconvenience, there is a photolithography method using a phase shift mask. The phase inversion mask is a method that uses a combination of a general light emitting area and a light emitting area that has been phase-shifted by 180 ° in the light emitting area so that a destructive interference phenomenon occurs between the light emitting areas in the light shielding area. Prevents light diffraction phenomenon. The lithographic technique of the phase inversion mask can sharply modulate the intensity of light passing through the mask to bring the pattern image close to the mask image. Various phase shift masks have been developed so that even more complicated patterns can be transferred.
【０００５】位相反転マスクの種類としては、レベンス
ン型（Ｌｅｖｅｎｓｏｎ Ｔｙｐｅ）とリム型（Ｒｉｍ
Ｔｙｐｅ）とがある。レベンスン型は隣接する透過部
の一方に光の位相を反転させる投影膜を形成したもので
ある。リム型はマスク開口部の周辺部に自己整合的に一
定の幅を有する位相反転層を形成したものである。The types of phase shift masks are a Levenson type and a rim type.
Type). The Levenson type is one in which a projection film for inverting the phase of light is formed on one of the adjacent transmissive portions. The rim type is a type in which a phase inversion layer having a certain width is formed in a self-aligning manner in the peripheral portion of the mask opening.
【０００６】前記のようなリム型の位相反転マスクを添
付図面を参照して説明すると、次の通りである。図１
は、従来のマスクの製造方法を示す断面図であり、従来
のマスクの製造方法は図１ａのように透明基板（ガラス
又は石英）１上に遮光層２を蒸着し、遮光層２上にガラ
ス感光剤３を塗布する。The rim type phase shift mask as described above will be described with reference to the accompanying drawings. Figure 1
FIG. 1 is a cross-sectional view showing a conventional mask manufacturing method. In the conventional mask manufacturing method, a light shielding layer 2 is vapor-deposited on a transparent substrate (glass or quartz) 1 as shown in FIG. Photosensitive agent 3 is applied.
【０００７】そして、図１ｂのように、選択的な露光工
程及び現像で透過領域を決め、透過領域の遮光層２を選
択的に除去し、透明基板１を露出させる。この時、マス
クの欠点を改める。図１ｃのように、ガラス感光剤３を
除去し、全面に回転塗布方式で位相反転物質であるＰＭ
ＭＡ（Ｐｏｌｙｍｅｔｈｙｌ Ｍｅｔｈａｃｒｙｌａｔ
ｅ）４を塗布し、遮光層２をマスクとしてＰＭＭＡ４を
露光及び現像して、遮光層２のない部分のＰＭＭＡ４を
除去する。続けて、パターニングされたＰＭＭＡ４をマ
スクとして用いたウエットエッチングにより遮光層２の
一部を除去することにより、マスクを完成する。Then, as shown in FIG. 1B, a transparent region is determined by a selective exposure process and development, and the light shielding layer 2 in the transparent region is selectively removed to expose the transparent substrate 1. At this time, the defect of the mask is corrected. As shown in FIG. 1c, the glass sensitizer 3 is removed, and the entire surface is coated with a spin coating method, which is a phase inversion material PM.
MA (Polymethyl Methacrylate)
e) 4 is applied, and the PMMA 4 is exposed and developed using the light shielding layer 2 as a mask to remove the PMMA 4 in the portion where the light shielding layer 2 is not present. Subsequently, the mask is completed by removing a part of the light shielding layer 2 by wet etching using the patterned PMMA 4 as a mask.
【０００８】このように製造された従来のリソグラフイ
マスクの構造は図１ｄのように透明基板１上に選択的に
光を遮断出来るように遮光層２が形成され、遮光層２の
上側に位相反転物質であるＰＭＭＡ４が遮光層２のエッ
ジ部分から透過領域へ延長されるように形成されたもの
である。In the structure of the conventional lithographic mask manufactured as described above, the light shielding layer 2 is formed on the transparent substrate 1 so as to selectively block light as shown in FIG. The inversion material PMMA4 is formed so as to extend from the edge portion of the light shielding layer 2 to the transmission region.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、このよ
うな従来のリソグラフイマスクの製造方法に於いては、
次のような問題点がある。 １．マスクの製造方法は位相反転層であるＰＭＭＡ４を
回転塗布方式により簡単に形成しているので厚さの調節
が困難である。 ２．遮光層の段差により位相反転物質であるＰＭＭＡ４
の平坦度が不良になる。 ３．マスクの取り扱いの時、位相反転物質であるＰＭＭ
Ａが損傷されやすい。 ４．マスクの取り扱いの時、位相反転物質であるＰＭＭ
Ａに粒子発生の可能性が高い。 ５．遮光層の側壁はウエットエッチングを通して形成さ
れ、これにより、アンダーカットが発生して位相反転効
果を低下させる。However, in such a conventional method of manufacturing a lithographic mask,
There are the following problems. 1. In the mask manufacturing method, it is difficult to control the thickness because the phase-shifting layer PMMA4 is easily formed by the spin coating method. 2. PMMA4 which is a phase inversion material due to the step of the light shielding layer
Has poor flatness. 3. PMM which is a phase inversion material when handling the mask
A is easily damaged. 4. PMM which is a phase inversion material when handling the mask
There is a high possibility that particles will be generated in A. 5. The sidewalls of the light shielding layer are formed by wet etching, which causes undercutting and reduces the phase inversion effect.
【００１０】本発明の目的は、前記のような問題点を解
決するためのもので、透明基板の不安定な表面段差を安
定な表面段差に変え、位相反転層の厚さを最適に調節
し、解像度を向上させたフォトリソグラフイマスクを提
供することにある。An object of the present invention is to solve the above-mentioned problems, by changing the unstable surface step of the transparent substrate into a stable surface step, and adjusting the thickness of the phase shift layer optimally. , Providing a photolithographic mask with improved resolution.
【００１１】[0011]
【課題を解決するための手段】前記の目的を達成するた
めの本発明は、透明基板上に位相反転層と遮光層とを蒸
着する工程と、遮光領域と投光領域とを定めて投光領域
の遮光層を選択的に除去する工程と、遮光層の側面に側
壁を形成する工程と、前記側壁と遮光層とをマスクとし
て用いて露出された位相反転層を選択的に除去する工程
とを含んでなる。In order to achieve the above object, the present invention provides a step of depositing a phase inversion layer and a light shielding layer on a transparent substrate, and a light shielding area and a light projecting area are defined to project light. A step of selectively removing the light shielding layer in the region, a step of forming a side wall on the side surface of the light shielding layer, and a step of selectively removing the exposed phase inversion layer using the side wall and the light shielding layer as a mask. Comprises.
【００１２】[0012]
【実施例】前記のような本発明のフォトリソグラフイマ
スクの製造方法を添付図面を参照してより詳細に説明す
ると、次の通りである。図２は、本発明による第１実施
例のリソグラフイマスクの製造方法を示す断面図であ
り、この実施例のリソグラフイマスクの製造方法は、ま
ず図２ａのように透明基板（石英又はガラス）１上に位
相反転層６と遮光層２、及び第１有機感光剤３とを順次
に蒸着する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The method of manufacturing the photolithographic mask of the present invention as described above will be described in more detail with reference to the accompanying drawings. FIG. 2 is a sectional view showing a method of manufacturing a lithographic mask according to a first embodiment of the present invention. In the method of manufacturing a lithographic mask according to this embodiment, first, as shown in FIG. 2a, a transparent substrate (quartz or glass) is used. The phase inversion layer 6, the light shielding layer 2, and the first organic photosensitizer 3 are sequentially deposited on the first layer 1.
【００１３】ここで、位相反転層６としては、シリコン
酸化膜（ＳｉＯ2） かＰＭＭＡ、又はＳＯＧ（Ｓｐｉｎ
Ｏｎ Ｇｌａｓｓ）等を使用し、遮光層２としては、
クロム又はアルミニウム等を使用し、有機感光剤は紫外
線、遠紫外線又は電子ビームで感光できる物質にする。
そして、位相反転層６の厚さ（Ｔ）はＴ＝λ／２（ｎ−
１）（λ：露光波長、ｎ＝露光波長に対する位相反転層
の屈折率）で定められる。Here, as the phase shift layer 6, a silicon oxide film (SiO 2 ), PMMA, or SOG (Spin) is used.
On Glass) or the like, and as the light-shielding layer 2,
Chromium, aluminum, or the like is used, and the organic photosensitizer is a substance that can be exposed to ultraviolet rays, far ultraviolet rays, or electron beams.
The thickness (T) of the phase inversion layer 6 is T = λ / 2 (n−
1) (λ: exposure wavelength, n = refractive index of phase inversion layer with respect to exposure wavelength).
【００１４】図２ｂのように第１有機感光剤３を選択的
に露光及び現像して、光透過領域を定めた後、その光透
過領域の遮光層２を垂直エッチングにより選択的に除去
する。図２ｃのように前記第１有機感光剤３をすべて除
去して、全面に第２有機感光剤３を蒸着する。図２ｄの
ように第２有機感光剤３ａをマスクなしでエッチングバ
ックを施し、遮光層２の側面に側壁有機感光剤３ｂを形
成する。図２ｅのように遮光層２及び側壁感光剤３ｂを
マスクとして使用し、露出された位相反転層６を垂直エ
ッチング法により選択的に除去して、透明基板１を露出
させた後、側壁有機感光剤３ｂを除去することによる、
本発明による第１実施例のリソグラフイマスクの製造方
法である。As shown in FIG. 2B, the first organic photosensitizer 3 is selectively exposed and developed to define a light transmitting area, and then the light shielding layer 2 in the light transmitting area is selectively removed by vertical etching. As shown in FIG. 2c, the first organic photosensitizer 3 is completely removed and the second organic photosensitizer 3 is deposited on the entire surface. As shown in FIG. 2d, the second organic photosensitizer 3a is etched back without a mask to form the side wall organic photosensitizer 3b on the side surface of the light shielding layer 2. As shown in FIG. 2e, the light shielding layer 2 and the sidewall photosensitizer 3b are used as a mask, and the exposed phase shift layer 6 is selectively removed by a vertical etching method to expose the transparent substrate 1 and then the sidewall organic photosensitizer. By removing agent 3b,
1 is a method of manufacturing a lithographic mask according to a first embodiment of the present invention.
【００１５】一方、図３は本発明による第２実施例のリ
ソグラフイマスクの製造方法を示す断面図であり、この
実施例のリソグラフイマスクの製造方法は、まず図３ａ
のように透明基板（石英又はガラス）１上に位相反転層
６、遮光層２及び第１有機感光剤３を順次に蒸着する。On the other hand, FIG. 3 is a sectional view showing a method of manufacturing a lithographic mask according to a second embodiment of the present invention.
As described above, the phase inversion layer 6, the light shielding layer 2 and the first organic photosensitive material 3 are sequentially deposited on the transparent substrate (quartz or glass) 1.
【００１６】ここで、位相反転層６としては、シリコン
酸化膜（ＳｉＯ2） ，ＰＭＭＡ，ＳＯＧ（Ｓｐｉｎ Ｏ
ｎ Ｇｌａｓｓ）等を使用し、遮光層２としては、クロ
ム（Ｃｒ）又はアルミニウム（Ａｌ）等を使用し、有機
感光剤は紫外線、遠紫外線又は電子ビームで感光できる
物質にする。そして、位相反転層６の厚さ（Ｔ）はＴ＝
λ／２（ｎ−１）（λ：露光波長、ｎ＝露光波長に対す
る位相反転層の屈折率）で定められる。Here, as the phase shift layer 6, a silicon oxide film (SiO 2 ), PMMA, SOG (Spin O) is used.
n Glass) or the like, chromium (Cr) or aluminum (Al) or the like is used for the light shielding layer 2, and the organic photosensitizer is a substance that can be exposed to ultraviolet rays, far ultraviolet rays, or electron beams. The thickness (T) of the phase inversion layer 6 is T =
λ / 2 (n-1) (λ: exposure wavelength, n = refractive index of phase inversion layer with respect to exposure wavelength).
【００１７】図３ｂのように、第１有機感光剤３を選択
的に露光及び現像して光透過領域を定めた後、その光透
過領域の遮光層２を垂直エッチングにより選択的に除去
する。図３ｃのように光透過領域を定めた第１有機感光
剤を約２５０℃の温度で熱処理して、有機質感光剤の熱
的フローが生じるようにすることにより、遮光層２の側
面に側壁有機感光剤３ｃを形成する。そして、図３ｄの
ように側壁有機感光剤をマスクとして用いて、露出され
た位相反転層６を垂直エッチング法により選択的に除去
し、側壁有機感光剤を除去することにより、本発明の第
２実施例のリソグラフイマスクを完成する。As shown in FIG. 3b, the first organic photosensitizer 3 is selectively exposed and developed to define a light transmitting area, and then the light shielding layer 2 in the light transmitting area is selectively removed by vertical etching. As shown in FIG. 3c, the first organic photosensitizer having a light transmitting region is heat-treated at a temperature of about 250 ° C. to generate a thermal flow of the organic photosensitizer, so that the sidewall organic layer is formed on the side surface of the light shielding layer 2. The photosensitizer 3c is formed. Then, as shown in FIG. 3d, by using the sidewall organic photosensitizer as a mask, the exposed phase inversion layer 6 is selectively removed by a vertical etching method to remove the sidewall organic photosensitizer. The lithographic mask of the example is completed.
【００１８】このように製造される本発明によるリソグ
ラフイマスクの構造は、次の通りである。すなわち、図
２ｅ及び図３ｄのように透明基板１の投光領域を除いた
部分に位相反転層６が形成され、位相反転層６上のエッ
ジ部分を除外した領域に遮光層が形成された構造であ
る。The structure of the lithographic mask according to the present invention thus manufactured is as follows. That is, as shown in FIGS. 2e and 3d, the phase inversion layer 6 is formed in a portion of the transparent substrate 1 excluding the light projecting area, and the light shielding layer is formed in an area of the phase inversion layer 6 excluding the edge portion. Is.
【００１９】このように製造される本発明によるリソグ
ラフイマスクの特性は、次の通りである。図４は、本発
明によるリソグラフイマスクの透過量の振幅及びウェー
ハ上の光強度の振幅を示すものである。図４ａは、本発
明のリソグラフイマスクを透過した時、マスクの直下に
おいての透過光の位相を示すもので、遮光領域のエッジ
部分で位相反転層により透過光の位相が反転されること
を説明している。図４ｂは、感光剤が塗布されたウェー
ハ上での光振幅を示すものであり、図４ｃは、感光剤が
塗布されたウェーハ上での光感度を示すものであり、図
４ｄは、本発明のマスクを使用して、コンタクトホール
をパターニングした時、パターニングされた断面の輪郭
を示すものであって、位相反転層の厚さの調節が容易な
ので、線幅の分離が簡単で輪郭がより急峻になる。The characteristics of the lithographic mask according to the present invention manufactured as described above are as follows. FIG. 4 shows the amplitude of the amount of transmission of the lithographic mask according to the present invention and the amplitude of the light intensity on the wafer. FIG. 4a shows the phase of transmitted light immediately below the mask when transmitted through the lithographic mask of the present invention, and illustrates that the phase of the transmitted light is inverted by the phase inversion layer at the edge portion of the light shielding region. is doing. FIG. 4b shows the light amplitude on a wafer coated with a photosensitizer, FIG. 4c shows the photosensitivity on a wafer coated with a photosensitizer, and FIG. 4d shows the present invention. It shows the contour of the patterned cross section when the contact hole is patterned by using the mask of 1. Since the thickness of the phase inversion layer can be easily adjusted, the line width can be easily separated and the contour becomes steeper. become.
【００２０】[0020]
【発明の効果】以上、説明したように、本発明の製造方
法に於いては次のような効果がある。 １．位相反転層上に遮光層が形成されるので、位相反転
層の厚さの調節が容易で、解像度を向上させることが出
来る。 ２．有機感光剤の側壁角度により位相反転層のエッジ幅
が決定されるので、マスクの工程なしで自己整合的に位
相反転層をパターニングするために工程がやさしい。 ３．遮光層と位相反転層の側壁とが垂直エッチングによ
り形成されるので、側壁輪郭が良好である。 ４．コンタクトホールのような孤立型パターンの形成の
時、より容易に作業できる。As described above, the manufacturing method of the present invention has the following effects. 1. Since the light shielding layer is formed on the phase inversion layer, the thickness of the phase inversion layer can be easily adjusted and the resolution can be improved. 2. Since the edge width of the phase inversion layer is determined by the side wall angle of the organic photosensitizer, the process is easy to pattern the phase inversion layer in a self-aligned manner without using a mask process. 3. Since the light shielding layer and the side wall of the phase inversion layer are formed by vertical etching, the side wall profile is good. 4. When forming an isolated pattern such as a contact hole, work can be performed more easily.
【図１】 従来のリソグラフイマスクの製造方法を示す
断面図である。FIG. 1 is a sectional view showing a conventional method for manufacturing a lithographic mask.
【図２】 本発明による第１実施例のリソグラフイマス
クの製造方法を示す断面図である。FIG. 2 is a cross-sectional view showing the method of manufacturing the lithographic mask of the first embodiment according to the present invention.
【図３】 本発明による第２実施例のリソグラフイマス
クの製造方法を示す断面図である。FIG. 3 is a sectional view showing a method of manufacturing a lithographic mask according to a second embodiment of the present invention.
【図４】 本発明によるリソグラフイマスクの特性説明
図である。FIG. 4 is a characteristic explanatory view of a lithographic mask according to the present invention.
１…透明基板、２…遮光層、３，３ａ，３ｂ，３ｃ…有
機感光体、６…位相反転層。DESCRIPTION OF SYMBOLS 1 ... Transparent substrate, 2 ... Light-shielding layer, 3, 3a, 3b, 3c ... Organic photoconductor, 6 ... Phase inversion layer.
Claims (13)
着する工程と、 遮光領域と投光領域とを定めて投光領域の遮光層を選択
的に除去する工程と、 遮光層の側面に側壁を形成する工程と、 前記側壁と遮光層とをマスクとして利用して、露出され
た位相反転層を選択的に除去する工程と、を含んでなる
ことを特徴とするリソグラフイマスクの製造方法。1. A step of depositing a phase inversion layer and a light shielding layer on a transparent substrate, a step of defining a light shielding region and a light projecting region and selectively removing the light shielding layer in the light projecting region, A lithographic mask comprising: a step of forming a sidewall on a side surface; and a step of selectively removing the exposed phase inversion layer by using the sidewall and the light shielding layer as a mask. Production method.
有機感光剤を順次に蒸着する工程と、 前記第１有機感光剤に選択的に露光及び現像して遮光領
域を定め、投光領域の遮光層を選択的に除去する工程
と、 第１有機感光剤を除去して遮光層の側面に第２有機感光
剤の側壁を形成する工程と、 遮光層及び第２有機感光剤の側壁をマスクとして用い
て、露出された位相反転層を選択的に除去する工程と、
を含んでなることを特徴とするリソグラフイマスクの製
造方法。2. A phase inversion layer and a light shielding layer on a transparent substrate, a first
A step of sequentially depositing an organic photosensitizer, a step of selectively exposing and developing the first organic photosensitizer to define a light-blocking region, and selectively removing a light-blocking layer in the light-projecting region; Removing the agent to form a side wall of the second organic photosensitizer on the side surface of the light shielding layer, and selectively removing the exposed phase shift layer using the side walls of the light shielding layer and the second organic photosensitizer as a mask And the process of
A method of manufacturing a lithographic mask, comprising:
を特徴とする請求項２記載のリソグラフイマスクの製造
方法。3. The method for producing a lithographic mask according to claim 2, wherein quartz is used for the transparent substrate.
遠紫外線、又は電子ビームで感光される感光剤を用いる
ことを特徴とする請求項２記載のリソグラフイマスクの
製造方法。4. The method for manufacturing a lithographic mask according to claim 2, wherein the first and second organic photosensitizers are photosensitizers that are exposed to ultraviolet rays, deep ultraviolet rays, or electron beams.
ることを特徴とする請求項２記載のリソグラフイマスク
の製造方法。5. The method for manufacturing a lithographic mask according to claim 2, wherein chromium is used as a material of the light shielding layer.
使用することを特徴とする請求項２記載のリソグラフイ
マスクの製造方法。6. The method of manufacturing a lithographic mask according to claim 2, wherein aluminum is used as a material of the light shielding layer.
化膜を使用することを特徴とする請求項２記載のリソグ
ラフイマスクの製造方法。7. The method of claim 2, wherein a silicon oxide film is used as a material of the phase shift layer.
用することを特徴とする請求項２記載のリソグラフイマ
スクの製造方法。8. The method of claim 2, wherein SOG is used as a material of the phase shift layer.
使用することを特徴とする請求項２記載のリソグラフイ
マスクの製造方法。9. The method according to claim 2, wherein PMMA is used as a material of the phase shift layer.
源の波長（λ）と位相反転層物質との屈折率（ｎ）の関
係式Ｔ＝λ／２（ｎ−１）で形成することを特徴とする
請求項２記載のリソグラフイマスクの製造方法。10. The thickness (T) of the phase shift layer is expressed by a relational expression T = λ / 2 (n−1) between the wavelength (λ) of the exposure source and the refractive index (n) of the phase shift layer material. The method of manufacturing a lithographic mask according to claim 2, wherein the method is used.
去方法は、垂直エッチングを使用することを特徴とする
請求項２記載のリソグラフイマスクの製造方法。11. The method of manufacturing a lithographic mask according to claim 2, wherein vertical etching is used as a method of selectively removing the light shielding layer and the phase shift layer.
機感光剤を順次に蒸着する工程と、 前記有機感光剤に選択的に露光及び現像して遮光領域を
定め、投光領域の遮光層を選択的に除去する工程と、 前記有機感光剤を熱処理して遮光層の側面に側壁感光剤
を形成する工程と、 遮光層及び側壁有機感光剤をマスクとして用いて、露出
された位相反転層をエッチングする工程を含んで構成さ
れることを特徴とするリソグラフイマスクの製造方法。12. A step of sequentially depositing a phase inversion layer, a light blocking layer, and an organic photosensitizer on a transparent substrate, and selectively exposing and developing the organic photosensitizer to define a light blocking region, and blocking the light projecting region. A step of selectively removing the layer; a step of heat-treating the organic photosensitizer to form a sidewall photosensitizer on a side surface of the light-shielding layer; and an exposed phase inversion using the light-shielding layer and the sidewall organic photosensitizer as a mask. A method of manufacturing a lithographic mask, comprising a step of etching a layer.
ーが生じられるようにすることを特徴とする請求項１２
記載のリソグラフイマスクの製造方法。13. The heat treatment causes a thermal flow of the organic photosensitizer to occur.
A method for producing the described lithographic mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11023794A JP2681610B2 (en) | 1994-04-27 | 1994-04-27 | Method for manufacturing lithographic mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11023794A JP2681610B2 (en) | 1994-04-27 | 1994-04-27 | Method for manufacturing lithographic mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07295205A true JPH07295205A (en) | 1995-11-10 |
| JP2681610B2 JP2681610B2 (en) | 1997-11-26 |
Family
ID=14530588
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11023794A Expired - Fee Related JP2681610B2 (en) | 1994-04-27 | 1994-04-27 | Method for manufacturing lithographic mask |
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| Country | Link |
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| JP (1) | JP2681610B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101040366B1 (en) * | 2004-12-17 | 2011-06-10 | 주식회사 하이닉스반도체 | Method for manufacturing attenuated phase shift mask |
| JP2011215614A (en) * | 2010-03-15 | 2011-10-27 | Hoya Corp | Multi-level gradation photomask, method for manufacturing multi-level gradation photomask, and method for transferring pattern |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6116517A (en) * | 1984-07-03 | 1986-01-24 | Fujitsu Ltd | Manufacture of photomask |
| JPH02211451A (en) * | 1989-02-13 | 1990-08-22 | Toshiba Corp | Exposure mask, manufacture of exposure mask, and exposing method using the same |
| JPH03261951A (en) * | 1990-03-13 | 1991-11-21 | Mitsubishi Electric Corp | Photomask and production thereof |
| JPH04131852A (en) * | 1990-09-21 | 1992-05-06 | Dainippon Printing Co Ltd | Manufacturing of photomask with phase shifting layer |
| JPH04216552A (en) * | 1990-12-17 | 1992-08-06 | Sanyo Electric Co Ltd | Exposing mask and exposing method |
| JPH04291345A (en) * | 1991-03-20 | 1992-10-15 | Fujitsu Ltd | Pattern forming method |
-
1994
- 1994-04-27 JP JP11023794A patent/JP2681610B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6116517A (en) * | 1984-07-03 | 1986-01-24 | Fujitsu Ltd | Manufacture of photomask |
| JPH02211451A (en) * | 1989-02-13 | 1990-08-22 | Toshiba Corp | Exposure mask, manufacture of exposure mask, and exposing method using the same |
| JPH03261951A (en) * | 1990-03-13 | 1991-11-21 | Mitsubishi Electric Corp | Photomask and production thereof |
| JPH04131852A (en) * | 1990-09-21 | 1992-05-06 | Dainippon Printing Co Ltd | Manufacturing of photomask with phase shifting layer |
| JPH04216552A (en) * | 1990-12-17 | 1992-08-06 | Sanyo Electric Co Ltd | Exposing mask and exposing method |
| JPH04291345A (en) * | 1991-03-20 | 1992-10-15 | Fujitsu Ltd | Pattern forming method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101040366B1 (en) * | 2004-12-17 | 2011-06-10 | 주식회사 하이닉스반도체 | Method for manufacturing attenuated phase shift mask |
| JP2011215614A (en) * | 2010-03-15 | 2011-10-27 | Hoya Corp | Multi-level gradation photomask, method for manufacturing multi-level gradation photomask, and method for transferring pattern |
| JP2014219693A (en) * | 2010-03-15 | 2014-11-20 | Hoya株式会社 | Photo mask, production method of the same, and pattern transfer method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2681610B2 (en) | 1997-11-26 |
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