JP2924804B2 - Photomask, method of manufacturing the same, and photomask blanks - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask used in a manufacturing apparatus such as a semiconductor integrated circuit and a liquid crystal display, and more particularly to a phase shift mask, a method of manufacturing the same, and a photomask blank.

[0002]

2. Description of the Related Art With the increase in the degree of integration of semiconductor integrated circuits, miniaturization of circuit patterns has been rapidly progressing. On the other hand, a photolithography technique using a projection exposure apparatus has a resolution limit due to the wavelength of a light source. In recent years, a phase shift mask for forming a pattern on a photomask with a phase member in order to improve resolution has been actively developed.

[0003] Various types of phase shift masks have been proposed so far.
The halftone phase shift mask described in
Due to its simple structure, it has begun to be used in semiconductor integrated circuit production.

[0004] Halftone phase shift masks are known to be particularly effective for hole patterns.
FIG. 12 is a plan view showing a halftone phase shift mask. In FIG. 12, the opening is surrounded by the translucent phase shift unit 2. FIG. 13A is a cross-sectional view illustrating a photomask, and FIG. 13B is a diagram illustrating an amplitude transmittance of light transmitted through the photomask. As shown in FIG. 13A, a translucent phase shift film 5 forming a translucent phase shift unit 2 is formed on a glass substrate 4, and an opening 1 is opened in the translucent phase shift film 5. The amplitude of the light transmitted through the translucent phase shift film 5 is attenuated and the phase is inverted.

[0005] The halftone phase shift mask has a large depth of focus near the resolution limit, so that the practical resolution is improved. In Japanese Patent Application Laid-Open No. 7-271013, as an ideal halftone phase shift mask having the maximum depth of focus, a photo having an 0th-order Bessel function J0 (2π × λ / NA) having an amplitude transmittance as shown in FIG. Suggest a mask. Where x is the position from the center of the opening,
λ is the wavelength of the light source, and NA is the numerical aperture of the projection lens. In FIG. 14, the calculation was performed with λ = 248 nm and NA = 0.5.

It is well known in optics that when the amplitude of light is made to be a Bessel function, the diffraction of light is suppressed and the depth of focus becomes very deep. It is well known in optics, for example, in April 1987, Journal of Optical. Society of America, Vol. 4, No. 4, pp. 651-654 (Journ
al of Optical Society of A
merica, Vol. 4, No. 4, pp. 651-
654, April, 1987).

However, in practice, it is impossible with the current technology to actually manufacture a photomask having a continuous amplitude transmittance distribution such as a Bessel function. Therefore, the above publication proposes a method of forming the auxiliary opening 8 around the opening 1 as shown in FIG. 15 as a method of approximately realizing the amplitude transmittance distribution. The cross section of the photomask at this time is shown in FIG.
(B).

FIG. 3 shows a light intensity distribution 31 of a normal halftone phase shift mask and a light intensity distribution 32 of a halftone phase shift mask to which an auxiliary opening 8 is added. Exposure conditions include a halftone phase having a transmittance of 10% and a pattern having a hole diameter of 0.25 μm × 0.25 μm using a projection exposure apparatus having λ = 248 nm, NA = 0.5, and coherence factor σ = 0.3. The shift mask was exposed.

When an ordinary halftone phase shift mask is used, a side rope having a large light intensity is generated at a position away from the center of the opening. Depending on the exposure amount, the side rope may be transferred to the photoresist. When the auxiliary opening 8 is provided, the amplitude transmittance approaches the Bessel function, and the side rope is suppressed.

FIG. 4 shows a focal depth characteristic 41 of a normal halftone phase shift mask and a focal depth characteristic 42 of a halftone phase shift mask to which the auxiliary opening 8 is added.
When the peak light intensity at the center of the opening is defocused, the peak light intensity decreases due to blurring of the image. The depth of focus characteristic 42 of the halftone phase shift mask to which the auxiliary opening 8 is added has a smaller decrease in the peak light intensity when defocused compared to the depth of focus characteristic 41 of the normal halftone phase shift mask. Is growing.

The width of the auxiliary opening 8 is smaller than the diameter of the opening 1. When the hole diameter is 0.25 μm × 0.25 μm, the width of the auxiliary opening 8 needs to be about 0.1 μm. These dimensions are the dimensions on the wafer and are about four or five times larger on the enlarged mask.

However, with the current photomask manufacturing technology, when the dimension on the photomask is 1 μm or less, it becomes very difficult to control the dimension. Since the width of the auxiliary opening 8 is about 0.5 μm on the photomask, it is difficult to control its size.

On the other hand, since the light transmits 100% through the auxiliary opening 8, the effect is very large. If the size of the auxiliary opening 8 is slightly small, the effect of improving the depth of focus is greatly reduced.
Conversely, if the size of the auxiliary opening 8 is slightly larger, the auxiliary opening 8 itself is transferred to the photoresist on the wafer.

Japanese Patent Application Laid-Open No. 7-281413 discloses a method of using a light-shielding portion instead of an opening as an auxiliary pattern. FIG. 17 is a plan view of a photomask, and FIG. ) Shows the amplitude transmittance in Fig. 1.
8 (b). As shown in the figure, the auxiliary light-shielding portion 9 is realized by patterning an opaque film 10 on the semi-transparent phase shift film 5.

FIG. 3 shows a light intensity distribution 33 of the halftone phase shift mask to which the auxiliary light shielding portion 9 is added. By using the auxiliary light-shielding portion 9, it is possible to suppress a side rope generated in a normal halftone phase shift mask at a position away from the center of the opening.

The auxiliary light-shielding portion 9 is located at a position 0.88λ / NA where the amplitude of the side rope is positive in the Bessel function shown in FIG.
And a width of about 0.25 μm, which is larger than that of the auxiliary opening 8. FIG. 4 shows the depth of focus characteristic 43 of the halftone phase shift mask to which the auxiliary light shielding portion 9 is added. The depth of focus characteristic is almost the same as a normal halftone phase shift mask, and the depth of focus hardly extends.

[0017]

In order to further enhance the depth of focus of a normal halftone phase shift mask and to suppress side lobes, the amplitude transmittance of the halftone phase shift mask should be as small as possible. What is necessary is just to approach the Bessel function. If this is to be realized with the auxiliary opening, it is necessary to create a narrow opening in which line width control is difficult. Alternatively, if an attempt is made to realize the auxiliary light-shielding portion, the width can be widened, but the depth of focus does not increase.

SUMMARY OF THE INVENTION An object of the present invention is to provide a photomask which is easy to produce, has a higher depth of focus improvement effect than a normal halftone phase shift mask, and has a lower side lobe than a normal halftone phase shift mask, a method of manufacturing the same, and a photomask. To provide blanks.

[0019]

In order to achieve the above object, a photomask according to the present invention is a photomask having a first light transmitting portion, a second light transmitting portion, and a third light transmitting portion. The first light transmitting portion is formed by exposing the surface of the photomask substrate, and the second light transmitting portion surrounds the first light transmitting portion and sets the phase of the transmitted exposure light to the first light transmitting portion.
The third light transmitting portion surrounds the second light transmitting portion, and attenuates the amplitude while making the phase of the transmitted exposure light equal to that of the first light transmitting portion. It attenuates.

Further, the third light transmitting section measures 0.88λ / NA from 0.88λ / NA when measured from the center of the first light transmitting section, where λ is the wavelength of the light source of the projection exposure apparatus and NA is the numerical aperture of the projection lens. It is arranged between 8λ / NA.

The third light transmitting portion is located outside of 0.88 λ / NA when measured from the center of the first light transmitting portion, where λ is the wavelength of the light source of the projection exposure apparatus and NA is the numerical aperture of the projection lens. It is what is arranged.

Further photomask according to the present invention is a photomask having a shift layer, and a re-reversal film, reversal film, have a opening Ru exposing the photomask substrate surface,
And a film which is translucent and inverts the phase of the exposure light, wherein the re-inversion film surrounds the opening on the inversion film.
And transparent or translucent, and the exposure light
This is a film for re-inverting the phase of.

A photomask blank according to the present invention is a photomask brand having a reversal film and a reinversion film, wherein the reversal film is provided on a photomask substrate .
It is, and a semi-transparent, a film for inverting the phase of the exposure light, re-reversal film is provided on the inversion layer, and Toru
This film is bright or translucent and re-inverts the phase of the exposure light.

The photomask according to the present invention is a photomask having a translucent film and an inversion film, wherein the translucent film has an opening for exposing the photomask substrate surface, and a semi-transparent film, reversal film, the provided enclose take the opening of the semi-transparent film, and a transparent walk
Is a film which is translucent and inverts the phase of the exposure light.

A method of manufacturing a photomask according to the present invention is a method of manufacturing a photomask having a film forming step, a first patterning step, and a second patterning step.
In the film forming step, a semi-transparent
To form a reversal film for reversing the phase of the exposure light,
On the reversal film, transparent or translucent,
A process for forming a re-inversion film for re-inverting the phase of light.
Ri, first pattern step is a desired portion is removed and treated to desired patterns of reinversion film, the second patterning process, the desired portion is removed by a desired the inversion layer a process of the path <br/> Turn-down.

A method of manufacturing a photomask according to the present invention is a method of manufacturing a photomask having a film forming step, a first patterning step, and a second patterning step.
In the film forming step, half of the exposure light is formed on the photomask substrate.
Form a transparent film, and on the translucent film, exposure light
Transparent or translucent, and the phase of the exposure light
In the first patterning step, a desired portion of the inversion film is removed and a desired pattern is formed.
A process for the over emissions, second patterning process, the a desired removing a portion was treated according to desired patterns of translucent film.

[0027]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(Embodiment 1) FIG. 1 is a plan view showing Embodiment 1 of the present invention.

In FIG. 1, the photomask according to the first embodiment of the present invention includes an opening 1, a translucent phase shift section 2, and a translucent section 3. The light transmitted through the translucent phase shift unit 2 has its amplitude attenuated and its phase is inverted with respect to the opening 1. On the other hand, the light transmitted through the translucent part 3 is
Although the amplitude is attenuated, it has the same phase as the aperture 1.

FIG. 2A is a sectional view of a photomask according to the first embodiment of the present invention. A translucent phase shift film 5 is deposited on a glass substrate 4, and a part of the translucent phase shift film 5 is patterned in the shape of the opening 1.

The translucent phase shift film 5 is made of chromium, chromium oxide, chromium oxynitride, chromium fluoride, molybdenum silicide, molybdenum silicide oxide,
It is a single-layer or multi-layer film made of molybdenum silicide oxynitride, molybdenum silicide fluoride, or the like. At this time, the conditions required for the translucent phase shift film 5 are that the transmittance of the exposure light is 5 to 20% and the phase of the transmitted exposure light needs to be changed by 180 degrees.

A phase shift film 6 is formed on the translucent phase shift film 5 and patterned in the shape of the translucent portion 3. Materials for the phase shift film 6 include silicon oxide, silicon nitride, silicon oxide, chromium oxide, chromium oxynitride, chromium fluoride, molybdenum silicide, molybdenum silicide oxide, and molybdenum silicide oxynitride. , Fluoride of molybdenum silicide or the like is used.

It is desirable that the material of the phase shift film 6 has a transmittance of exposure light of 10% or more. When silicon oxide is used, a transmittance close to 100% can be obtained. Since the phase is also converted by 180 degrees in the phase shift film 6, the phase of the light transmitted through the translucent portion 3 is equal to the phase of the light transmitted through the opening 1.

FIG. 2B shows the amplitude transmittance of the photomask at this time. The amplitude transmittance distribution approaches the shape of the ideal Bessel function of FIG. The translucent portion 3 is a Bessel function, and the position where the amplitude on the side rope is positive is 0.88.
It is arranged between λ / NA and 1.38λ / NA. The width of the opening is larger than that of the auxiliary opening 8 and is substantially equal to the width of the opening 1, so that the width of the opening is easy.

The effect of the photomask according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 3 shows a light intensity distribution on a wafer by various phase shift masks. In the light intensity distribution 31 of the normal halftone phase shift mask, a large side rope is generated at a position away from the center of the opening. In the light intensity distribution 34 of the halftone phase shift mask to which the translucent portion 3 is added, the side rope is suppressed, and the transfer of the side rope to the resist can be prevented.

FIG. 4 shows the depth of focus characteristics of various phase shift masks. The depth of focus characteristic 44 of the halftone phase shift mask to which the translucent portion 3 is added has a smaller decrease in peak light intensity when defocused compared to the depth of focus characteristic 41 of a normal halftone phase shift mask.
Depth of focus is increasing.

(Embodiment 2) FIG. 5 shows Embodiment 2 of the present invention.
3 shows a photomask according to the present invention. As shown in FIG. 5A, a translucent film 7 is deposited on a glass substrate 4 and patterned in the shape of the opening 1. The translucent film 7 is a single layer or a multilayer film made of chromium, chromium oxide, chromium oxynitride, molybdenum silicide, molybdenum silicide oxide, molybdenum silicide oxynitride, or the like.

The conditions required for the translucent film 7 are that the transmittance of the exposure light is 5 to 20% and the phase change of the transmitted exposure light is within 10 degrees.

Further, a phase shift film 6 is formed on the translucent film 7 and is patterned into the shape of the opening 1 and the translucent portion 3. The material of the phase shift film 6 is silicon oxide, silicon nitride,
Oxidation chamber silicon, chromium oxide, chromium oxynitride,
Chromium fluoride, molybdenum silicide, molybdenum silicide oxide, molybdenum silicide oxynitride, molybdenum silicide fluoride, or the like is used.

The conditions required for the phase shift film 6 are that the transmittance of the exposure light is 10% or more, and that the phase of the transmitted exposure light must be changed by 180 degrees. When silicon oxide is used, a transmittance close to 100% can be obtained. FIG. 5B shows the amplitude transmittance of the photomask. The amplitude transmittance distribution approaches the shape of the ideal Bessel function of FIG. The second embodiment of the present invention has the same effect as the first embodiment of the present invention.

(Embodiment 3) FIGS. 6 and 7 show a photomask according to Embodiment 3 of the present invention. In the third embodiment,
The translucent portion 3 covers everything from the position 0.88λ / NA where the amplitude of the side rope is positive by the Bessel function. When the transmittance of the phase shift film 6 is relatively low between 10% and 50%, the intensity of the light transmitted through the translucent portion 3 is lower than that of the translucent phase shift portion.

As a result, it is possible to prevent the generation of an unnecessary pattern which occurs at the periphery of the photomask or around the alignment mark. 3 shows the light intensity distribution on the wafer when the photomask having the amplitude transmittance distribution shown in FIG. 7B is exposed, and 45 in FIG. 4 shows the depth of focus characteristic of the photomask shown in FIG.

Although slightly inferior to the depth of focus characteristic 44 of the photomask of FIG. 2, the depth of focus characteristic 45 of the photomask of FIG. The peak light intensity decreases slowly and the depth of focus is extended.

(Embodiment 4) FIG. 8 shows Embodiment 4 of the present invention.
1 shows a photomask according to the embodiment. The arrangement method of the translucent portion 3 when a plurality of openings 1 are arranged close to each other is shown.
In order to make the amplitude of the light transmitted through the photomask closer to the Bessel function type, the translucent portion 3 is measured from the center of all the openings to be between 0.88 λ / NA and 1.38 λ / NA or from 0.88 λ / NA. Must be located outside. If the original arrangement of the opening 1 is determined, the translucent section 3 can be automatically arranged. FIG. 9 shows a modification of the fourth embodiment of the present invention. In this case, the plurality of openings 1
, The area of the translucent portion 3 is reduced.

(Embodiment 5) FIG. 10 shows a method of manufacturing a photomask according to Embodiment 5 of the present invention. FIG. 10 (a)
As shown in FIG.
And a phase shift film 6 is further deposited thereon.
The translucent phase shift film 5 is composed of chromium, chromium oxide, chromium oxynitride, chromium fluoride, molybdenum silicide, molybdenum silicide oxide, molybdenum silicide oxynitride, molybdenum silicide fluoride, and the like. A single-layer or multi-layer film.

These materials are deposited by sputtering or CVD. At this time, the conditions required for the translucent phase shift film 5 are that the transmittance of the exposure light is 5 to 20% and the phase of the transmitted exposure light needs to be changed by 180 degrees.

The material of the phase shift film 6 includes silicon oxide, silicon nitride, silicon oxide chamber, chromium oxide, chromium oxynitride, chromium fluoride, molybdenum silicide, molybdenum silicide oxide, and molybdenum silicide. Oxynitride, fluoride of molybdenum silicide, or the like is used. These materials can be deposited by sputtering or CVD. In the case of silicon oxide, a coated glass can be used. The conditions required for the phase shift film 6 are that the transmittance of the exposure light is 10% or more, and the phase of the transmitted exposure light is 18%.
It is necessary to convert to 0 degrees.

As shown in FIG. 10B, after the application of the resist 11, exposure is performed using an electron beam lithography apparatus or a laser lithography apparatus, and then development is performed to obtain a resist pattern in which the translucent portion 3 remains. .

Next, as shown in FIG. 10C, etching is performed using the resist 11 as a mask. Since the etching stops at the upper layer of the translucent phase shift film 5, it is necessary to select a material having a large etching selectivity for the phase shift film 6 and the translucent phase shift film 5. For example, if silicon oxide is selected as the phase shift film 6 and chromium fluoride is selected as the translucent phase shift film 5, dry etching can be performed with a large selectivity using carbon tetrafluoride gas.

As shown in FIG. 10D, after the resist 11 is re-applied, exposure is performed using an electron beam drawing apparatus or a laser drawing apparatus, and then development is performed to obtain a resist pattern with the opening 1 opened. . Next, FIG.
Etching is performed using the resist 11 as a mask as shown in FIG. When silicon oxide is selected as the phase shift film 6 and chromium fluoride is selected as the translucent phase shift film, dry etching can be performed using carbon tetrachloride gas without damaging the phase shift film 6 and the glass substrate 4.

(Embodiment 6) FIG. 11 shows a method of manufacturing a photomask according to Embodiment 6 of the present invention. FIG. 11 (a)
A semi-transparent film 7 is deposited on a glass substrate 4 as shown in FIG.
Further, a phase shift film 6 is deposited thereon. Translucent film 7
Are chromium, chromium oxide, chromium oxynitride, molybdenum silicide, molybdenum silicide oxide,
It is a single-layer or multilayer film composed of molybdenum silicide oxynitride or the like. These materials are deposited by sputtering or CVD. The conditions required for the translucent film 7 are that the transmittance of the exposure light is 5 to 20% and the phase change of the transmitted exposure light is within 10 degrees.

The material of the phase shift film 6 includes silicon oxide, silicon nitride, silicon oxide chamber, chromium oxide, chromium oxynitride, chromium fluoride, molybdenum silicide, molybdenum silicide oxide, and molybdenum silicide. Oxynitride, fluoride of molybdenum silicide, or the like is used. These materials can be deposited by sputtering or CVD. In the case of silicon oxide, a coated glass can be used. The conditions required for the phase shift film 6 are that the transmittance of the exposure light is 10% or more, and the phase of the transmitted exposure light is 18%.
It is necessary to convert to 0 degrees.

As shown in FIG. 11B, after the application of the resist 11, exposure is performed using an electron beam lithography apparatus or a laser lithography apparatus, and then development is performed to open the opening 1 and the translucent section 3. Obtain a resist pattern.
Next, as shown in FIG. 11C, etching is performed using the resist 11 as a mask. For example, when silicon oxide is selected as the phase shift film 6 and chromium is selected as the translucent film 7, dry etching can be performed with a large selectivity using carbon tetrafluoride gas.

As shown in FIG. 11D, after the resist 11 is re-applied, exposure is performed using an electron beam lithography apparatus or a laser lithography apparatus, and then development is performed to obtain a resist pattern with the opening 1 opened. . Next, FIG.
Etching is performed using the resist 11 as a mask as shown in FIG. When silicon oxide is selected as the phase shift film 6 and chromium is selected as the translucent film 7, dry etching can be performed using carbon tetrachloride gas without damaging the phase shift film 6 and the glass substrate 4.

[0055]

As described above, according to the present invention, it is possible to easily produce a photomask having a higher depth of focus effect than that of a normal halftone phase shift mask, so that the focus margin in the photolithography process can be increased. Can be.

Further, a photomask having a lower side rope than that of a normal halftone phase shift mask can be easily formed, and the exposure dose margin in the photolithography process can be increased.

Further, by increasing the focus margin and the exposure amount margin, an effective finer pattern can be formed, and a semiconductor integrated circuit with a higher degree of integration can be manufactured.

[Brief description of the drawings]

FIG. 1 is a plan view showing a photomask according to a first embodiment of the present invention.

2A is a cross-sectional view illustrating a photomask according to Embodiment 1 of the present invention, and FIG. 2B is a diagram illustrating a photomask amplitude transmittance distribution.

FIG. 3 is a diagram showing a light intensity distribution on a wafer when various photomasks are used.

FIG. 4 is a diagram showing a depth of focus characteristic when various photomasks are used.

5A is a cross-sectional view illustrating a photomask according to a second embodiment of the present invention, and FIG. 5B is a diagram illustrating a photomask amplitude transmittance distribution.

FIG. 6 is a plan view showing a photomask according to Embodiment 3 of the present invention.

FIG. 7A is a cross-sectional view illustrating a photomask according to Embodiment 3 of the present invention, and FIG. 7B is a diagram illustrating a photomask amplitude transmittance distribution.

FIG. 8 is a plan view showing a photomask according to Embodiment 4 of the present invention.

FIG. 9 is a plan view showing a photomask of a modified example of Embodiment 4 of the present invention.

FIG. 10 is a view illustrating a method of manufacturing a photomask according to Embodiment 5 of the present invention.

FIG. 11 is a view illustrating a method of manufacturing a photomask according to Embodiment 6 of the present invention.

FIG. 12 is a plan view showing a conventional halftone phase shift mask.

13A is a cross-sectional view illustrating a conventional halftone phase shift mask, and FIG. 13B is a view illustrating a photomask amplitude transmittance distribution.

FIG. 14 is a diagram showing an amplitude transmittance distribution of an ideal halftone phase shift mask.

FIG. 15 is a plan view showing a conventional halftone phase shift mask using an auxiliary opening.

16A is a plan view showing a halftone phase shift mask using a conventional auxiliary opening, and FIG. 16B is a view showing a photomask amplitude transmittance distribution.

FIG. 17 is a plan view showing a conventional halftone phase shift mask using an auxiliary light shielding portion.

FIG. 18A is a plan view showing a halftone phase shift mask using a conventional auxiliary light shielding portion, and FIG. 18B is a diagram showing a photomask amplitude transmittance distribution.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Opening 2 Translucent phase shift part 3 Translucent part 4 Glass substrate 5 Translucent phase shift film 6 Phase shift film 7 Translucent film

Claims (8)

(57) [Claims] A first light transmitting portion, a second light transmitting portion, and a third light transmitting portion;
A first light transmitting portion formed by exposing a surface of a photomask substrate; and a second light transmitting portion surrounding the first light transmitting portion. And attenuates the amplitude of the transmitted exposure light while inverting the phase of the transmitted exposure light with respect to the first light transmission part. The third light transmission part surrounds the second light transmission part and changes the phase of the transmitted exposure light to the first light transmission part. A photomask wherein the amplitude is attenuated while being equal to one light transmitting portion. 2. The third light transmitting portion, wherein the wavelength of the light source of the projection exposure apparatus is λ and the numerical aperture of the projection lens is NA, is 0.88 λ / NA when measured from the center of the first light transmitting portion. 2. The photomask according to claim 1, wherein the photomask is arranged between 0.8 .mu. / NA. 3. The third light transmitting section, when the wavelength of the light source of the projection exposure apparatus is λ and the numerical aperture of the projection lens is NA, is outside 0.88λ / NA when measured from the center of the first light transmitting section. The photomask according to claim 1, wherein 4. A reversal film, a photomask having a re-reversal film, reversal film, have a opening Ru exposing the photomask substrate surface, and a semi-transparent, the exposure light phase a membrane to invert and re-invert membrane surrounding the opening on the reversal film set
Vignetting, and transparent or a translucent, photomask, characterized in that the film to re-invert the <br/> phase of the exposure light. 5. A photomask blank having an inversion film and a reinversion film, wherein the inversion film is provided on a photomask substrate and is translucent.
And a film for inverting the phase of the exposure light, wherein the re-inversion film is provided on the inversion film and is transparent or transparent.
Is a film that is translucent and re-inverts the phase of the exposure light. 6. A photomask having a translucent film and an inversion film, wherein the translucent film covers a surface of the photomask substrate .
It has an opening that exposed a translucent film to exposure light, reversing membrane surrounds Nde take the opening of the translucent film set
Vignetting, and transparent or a translucent, photomask, characterized in that the membrane to invert the position <br/> phase of the exposure light. 7. A film forming step, a first patterning step,
A method of manufacturing a photomask having a second patterning process, the film forming step, the photomask substrate, a semi-transparent
To form a reversal film for reversing the phase of the exposure light,
On the reversal film, transparent or translucent,
A process for forming a re-inversion film for re-inverting the phase of light.
Ri, first pattern step is a desired portion is removed and treated to desired patterns of reinversion film, the second patterning process, the desired portion is removed by a desired the inversion layer manufacturing method of a photomask, which is a process for the patterns. 8. A film forming step, a first patterning step,
A method of manufacturing a photomask having a second patterning step, wherein the film forming step comprises: forming a half of an exposure light on the photomask substrate ;
Form a transparent film, and on the translucent film, exposure light
Transparent or translucent, and the phase of the exposure light
A process for forming an inversion layer to be inverted, the first patterning process, the removal of the desired portion of the shift layer and a process for the desired patterns, a second patterning process, the semi-transparent film manufacturing method of a photomask, wherein the desired portion is removed is a process for the desired patterns of.