201214021 六、發明說明： 【發明所屬之技術領域】 本發明係關於例如液晶顯示裝置等平板顯示器（FUt Panel Display:以下稱作FPD)等之製造所使用之多調式光 罩、前述多調式光罩之製造方法及使用前述多調式光罩之 圖案轉印方法。 【先前技術】 FPD用薄膜電晶體（Thin Film Transistor :以下稱作tft) 基板係使用於透明基板上形成有含遮光部及透光部之轉印 用圖案之光罩’例如經過5次〜6次光微影步驟而製造。近 年來’為削減光微影步驟數而使用於透明基板上形成有含 遮光部、半透光部及透光部之轉印用圖案之多調式光罩 (參照日本特開2007-249198號公報）。 【發明内容】 [發明所欲解決之問題] 上述多調式光罩使用其可於被轉印體上部分形成抗蝕劑 殘膜值不同之抗姓圖案。此處，該光罩中遮光部係於透明 基板上形成半透光膜與遮光膜而成，半透光部係於透明基 板上形成半透光膜而成’透光部可成使透明基板露出而成 者。但’若使用如此多調式光罩於被轉印體上之抗姓膜轉 印轉印用圖案’則會導致例如在遮光部與透光部之交界部 分’或遮光部與半透光部之交界部分產生光之繞射，光迂 迴於遮光部’曝光用光之強度分佈變成平穩之曲線狀。其 結果’有形成於被轉印體上之抗蝕圖案之側壁形狀例如變 154646.doc 201214021 成拉伸下端般之錐狀等變平穩之情形。並且，若欲將如此 之抗勒圖案作為遮罩進行薄膜之加工，則加工線之寬度或 形狀之控制變困難，有液晶顯示裝置之製造良率下降之情 形。另，由光之繞射之影響隨轉印用圖案之微細化而變 大。 本發明之目的係提供—種多調式光罩、該多調式光罩之 製造方法'及使用該多調式光罩之圖案轉印方法，該多調 式光罩可抑制於遮光部與透光部之交界部分，或遮光部與 半透光部之交界部分之由光之繞射之影響，可將側壁形狀 尖銳（具有急劇上升之形狀）之抗蝕圖案形成於被轉印體 上。 [解決問題之技術手段] 本發明之第1態樣之多調式光罩，其特徵在於：其係含 遮光部、半透光部及透光部之特定之轉印用圖案形成於透 明基板上者； 前述遮光部係半透光膜、相移調整膜及遮光膜依次積層 於前述透明基板上而成； 前述半透光部係前述半透光膜形成於前述透明基板上 成； 前述透光部係使前述透明基板露出而成； 在前述遮光部與前述透光部之交界或前述遮光部與前述 半透光部之交界上，形成前述半透光膜上之前述相移調整 膜部分露出而成之移相器部； 在前述遮光部與前述透光部之交界形成前述移相器部 154646.doc 201214021 時’具有1線〜g線範圍内之代表波長之曝光用光透射前迷 移相器°卩時之相移量與前述曝光用光透射前述透光部時之 相移量之差變成90度以上、270度以内； 在削述遮光部與前述半透光部之交界形成前述移相器部 時具有1線〜g線範圍内之代表波長之曝光用光透射前述 移相器。p時之相移量與前述曝光用光透射前述半透光部時 之相移量之差變成90度以上、27〇度以内。 本發月之第2態樣之多調式光罩係含遮光部、半透光部 及透光部之特定之轉印用圖案形成於透明基板上者前述 遮光部係半透光膜、相移調整膜及遮光膜依次積層於前述 透明基板上而成，前述半透光部係前述半透光膜形成於前 述透明基板上而成，前述透光部係使前述透明基板露出而 成’在前述遮^部與前述透光部之交界部分，形成前述半 透光膜上之前述相移調整膜部分露出而成之移相器部，具 有1線〜g線範圍内之代表波長之曝光用光透射前述移相器 部時之相移量與前述曝光用光透射前述透光部時之相移量 之差變成90度以上、270度以内。 本發明之第3態樣係如第〗態樣所記載之多調式光罩，其 中前述移相器部之寬度為10nm以上、1〇〇〇nm以下。、 本發明之第4態樣係如第丨或第2態樣所記載之多調式光 罩’其中前述移才目器部係利用前述遮光膜之側姓刻而形成 者，前述移相器部之寬度為1〇 nm以上、5〇〇 以下。 本發明之第5態樣係如第1或第2態樣所記載之多調式光 罩，其中前述移相II部之前述曝光用光之透射率為5%以 154646.doc -6 · 201214021 上、20%以下。 :明:=㈣如第1至3之任-態樣所記載之多調 ==述遮光部與前述半透光部之交界部分，201214021 SUMMARY OF THE INVENTION [Technical Field] The present invention relates to a multi-tone mask used in the manufacture of a flat panel display such as a liquid crystal display device (hereinafter referred to as FPD), and the above-mentioned multi-tone mask. A manufacturing method and a pattern transfer method using the multi-tone mask described above. [Prior Art] Thin Film Transistor (hereinafter referred to as tft) The substrate is used for a photomask having a light-receiving portion and a transfer pattern for a light-transmitting portion formed on a transparent substrate, for example, 5 times to 6 Manufactured by the sub-light lithography step. In recent years, a multi-tone mask in which a transfer pattern including a light-shielding portion, a semi-transmissive portion, and a light-transmitting portion is formed on a transparent substrate for reducing the number of photolithography steps is described (refer to Japanese Laid-Open Patent Publication No. 2007-249198 ). SUMMARY OF THE INVENTION [Problem to be Solved by the Invention] The multi-tone mask described above can be used to form an anti-surname pattern having a different resist residual film value on the portion to be transferred. Here, the light shielding portion of the mask is formed by forming a semi-transparent film and a light shielding film on the transparent substrate, and the semi-transmissive portion is formed on the transparent substrate to form a semi-transparent film. Exposed to the original. However, if the pattern of the anti-surname film transfer transfer using the multi-touch mask on the transfer target is used, for example, the boundary portion between the light-shielding portion and the light-transmitting portion or the light-shielding portion and the semi-transmissive portion may be The boundary portion generates a diffraction of light, and the pupil returns to the light-shielding portion. The intensity distribution of the exposure light becomes a smooth curve. As a result, the shape of the side wall of the resist pattern formed on the object to be transferred is, for example, changed to a smooth shape such as a tapered shape at the lower end of the stretched 154646.doc 201214021. Further, if the film is to be processed by using such a resist pattern as a mask, the control of the width or shape of the processing line becomes difficult, and the manufacturing yield of the liquid crystal display device may be lowered. Further, the influence of the diffraction of light becomes larger as the transfer pattern is made finer. An object of the present invention is to provide a multi-tone mask, a method of manufacturing the multi-mode mask, and a pattern transfer method using the multi-mode mask, which can be suppressed in the light-shielding portion and the light-transmitting portion. The boundary portion or the boundary portion between the light shielding portion and the semi-transmissive portion is formed by a diffraction pattern of light, and a resist pattern having a sharp side wall shape (having a sharply rising shape) can be formed on the object to be transferred. [Means for Solving the Problem] The multi-mode mask according to the first aspect of the present invention is characterized in that the specific transfer pattern including the light shielding portion, the semi-transmissive portion, and the light transmitting portion is formed on the transparent substrate. The light-shielding portion semi-transmissive film, phase shift adjustment film, and light-shielding film are sequentially laminated on the transparent substrate; the semi-transmissive portion is formed by forming the semi-transmissive film on the transparent substrate; The portion is formed by exposing the transparent substrate; and the phase shift adjusting film portion on the semi-transmissive film is exposed at a boundary between the light shielding portion and the light transmitting portion or at a boundary between the light shielding portion and the semi-light transmitting portion The phase shifter portion is formed; when the phase shifter portion 154646.doc 201214021 is formed at the boundary between the light shielding portion and the light transmitting portion, the light having a representative wavelength of 1 line to g line is transmitted before transmission. The difference between the phase shift amount at the time of the phase shifter and the phase shift amount when the exposure light is transmitted through the light transmitting portion is 90 degrees or more and 270 degrees or less; and the boundary between the light shielding portion and the semi-light transmitting portion is formed. Phase shifter 1 representative of the exposure line ~g line of optical transmission wavelength range of the phase shifter. The difference between the phase shift amount at p and the phase shift amount when the exposure light is transmitted through the semi-transmissive portion becomes 90 degrees or more and 27 degrees or less. The multi-mode mask of the second aspect of the present month is a semi-transmissive film and a phase shift in which the specific light-shielding portion, the semi-transmissive portion, and the light-transmitting portion are formed on a transparent substrate. The adjustment film and the light shielding film are sequentially laminated on the transparent substrate, wherein the semi-transmissive portion is formed by forming the semi-transmissive film on the transparent substrate, and the transparent portion is formed by exposing the transparent substrate. a phase shifter portion formed by exposing the phase shift adjusting film portion on the semi-transmissive film to a boundary portion between the shielding portion and the light transmitting portion, and having an exposure wavelength of a representative wavelength in a range of 1 line to g line The difference between the phase shift amount when the phase shifter portion is transmitted and the phase shift amount when the exposure light is transmitted through the light transmitting portion becomes 90 degrees or more and 270 degrees or less. According to a third aspect of the invention, the multi-mode mask of the first aspect is characterized in that the width of the phase shifter portion is 10 nm or more and 1 nm or less. According to a fourth aspect of the present invention, in the multi-mode mask of the second or second aspect, wherein the shifting portion is formed by the side of the light-shielding film, the phase shifter portion is formed. The width is 1 〇 nm or more and 5 〇〇 or less. According to a fifth aspect of the present invention, in the multi-mode mask of the first or second aspect, the transmittance of the exposure light of the phase shifting portion II is 5% to 154646.doc -6 · 201214021 , 20% or less. :明:=(4) As described in the first to third aspects - the multi-tone described in the aspect == the boundary between the light-shielding portion and the semi-transmissive portion,
2移相器部，前述曝光用光透射前述第2移相器部時之相I 量與前述曝光用光透射前述半透光部時之相移量之 度以上、270度以内。 本發明之第7態樣係如第】至4之任一態樣所記載之多調 式光罩，其中前述曝光用光透射前述半透光部時之相移量 與前述曝光用光透射前述透光部時之相移量之差不滿⑹ 度0 本發明之第8態樣之多調式光罩之製造方法係將含遮 光部、透光部及半透光部之特定之轉㈣㈣形成於透明 基板上者’其具有：準備半透光膜、相移調整膜、遮光膜 及第1抗蝕膜依次積層於前述透明基板上之空白光罩之步 驟；對前述第1抗蝕膜實施描繪及顯影，形成至少覆蓋前 述遮光部之形成預定區域之第丨抗蝕圖案之步驟；將前述 第1抗蝕圖案作為遮罩而蝕刻前述遮光膜及前述相移調整 膜之第1蝕刻步驟；除去前述第1抗蝕圖案後，於已進行前 述第1蝕刻步驟之前述空白光罩上形成第2抗蝕膜之步驟； 對前述第2抗蝕膜實施描繪及顯影，形成至少覆蓋前述遮 光部之形成預定區域及前述半透光部之形成預定區域之第 2抗蝕圖案之步驟；將前述第2抗蝕圖案作為遮罩而蝕刻前 述半透光膜，且蝕刻前述遮光膜之側部而使前述相移調整 154646.doc 201214021 膜°P刀露出’形成移相器部之第2触刻步驟；及除去前述 第抗Μ圖案之步驟，具有i線〜g線範圍内之代表波長之曝 光用光透射前述移相器料之相移量與前述曝光用光透射 前述透光部時之相移量之差成90度以上、270度以内。 ，本發明之第9態樣之多調式光罩之製造方法，係將含遮 光。P itU及半透光部之特定之轉印用圖案形成於透明 基板上者’其具有·準備半透光膜、相移調整膜、遮光膜 及第1抗蝕膜依次積層於前述透明基板上之空白光罩之步 驟對前述第1抗姓膜貫施描繪及顯影，形成覆蓋前述遮 光=>卩之形成預疋區域之第i抗蝕圖案之步驟；將前述第㈠元 蝕圖案作為遮罩而蝕刻前述遮光膜之第丨蝕刻步驟；除去 前述第1抗蝕圖案後，於已進行前述第丨蝕刻步驟之前述空 白光罩上形成第2抗蝕膜之步驟；對前述第2抗蝕膜實施描 繪及顯景多，形成覆蓋前述遮光部之形成預定區$與位於前 述遮光部與前述透光部之交界部分之移相器部之形成預定 區域之第2抗蝕圖案之步驟；將前述第2抗蝕圖案作為遮罩 而蝕刻前述相移調整膜，形成前述半透光部與前述移相器 部之第2蝕刻步驟；除去前述第2抗蝕圖案後，於已進行前 述第2蝕刻步驟之前述空白光罩上形成第3抗蝕膜之步驟； 對前述第3抗蝕膜實施描繪及顯影，形成覆蓋除前述透光 部之形成預定區域外之區域之第3抗蝕圖案之步驟；將前 述第3抗Ί虫圖案作為遮罩而钮刻前述半透光膜之第3敍列步 驟；及除去前述第3抗蝕圖案之步驟；具有丨線〜§線範圍内 之代表波長之曝光用光透射前述移相器部時之相移量與前 154646.doc 201214021 述曝光用光透射前述透光部時之必曰 相移量之差成90度以上、 270度以内。 本發明之第_樣如第7態樣所記載之多調式光罩之製 造方法，#中形成前述第2抗蝕圖案之前述步驟中，形成 覆蓋位於前述遮光部與前述半透光部之交界部分之第2移 相器部之形成預定區域之前述第 k弟2抗蝕圖案，前述第2蝕刻 步驟中，形成前述第2移相器部，1右丨始.,_ b 1 昇有1線〜g線範圍内之代 表波長之曝光S光透射前述第2移相器部時之相移量與前 述曝光用光透射前述半透光部時之相移量之差成9〇度以 上、270度以内。 本發明之第11態樣如第6至第8之任一態樣所記載之多調 式光罩之製造方法，其中前述相移調整膜相對於前述遮光 膜及前述半透光膜之蝕刻所使用之蝕刻液或蝕刻氣體具有 耐性。 本發明之第12態樣之圖案轉印方法，其具有經由第1至 第5之任一態樣所記載之多調式光罩，或利用第6至第9之 任一態樣所記載之製造方法之多調式光罩，對形成於被轉 Ρ體上之抗蚀膜照射前述曝光用光，藉此於前述抗姓膜上 轉印前述轉印用圖案之步驟。 本發明之第13態樣如第1〇態樣所記載之圖案轉印方法’ 其中形成於前述被轉印體上之前述抗蝕膜相對於與前述移 相器部對應部分之曝光用光實質不具有感度。 [發明之效果] 根據本發明之多調式光罩、該多調式光罩之製造方法及 154646.doc 201214021 使用該多調式光罩之圖案轉印方法，可抑制於遮光部與透 光部之交界部分或遮光部與半透光部之交界部分之由光之 繞射之影響’可將側壁形狀尖銳（具有急劇上升之形狀）之 抗蝕圖案形成於被轉印體上。 【實施方式】 <本發明之一實施形態> 以下’一面主要參照圖1至圖3及圖6說明本發明之一實 施形態。圖1係本實施形態之多調式光罩1〇之部分剖面 圖。圖2係顯示使用多調式光罩10之圖案轉印方法之剖面 圖。圖3係本實施形態之多調式光罩1〇之製造步驟之流程 圖。圖6係本實施形態之多調式光罩1〇所具備之轉印用圖 案之部分平面圖。 (1)多調式光罩之構成 圖1所示之多調式光罩10例如係用於液晶顯示裝置（LCD) 用之薄膜電晶體（TFT)基板之製造等。但，圖1係例示多調 式光罩之積層結構者，實際之圖案未必與此相同。 多調式光罩10具有含遮光部110、半透光部115及透光部 120之特定轉印用圖案形成於透明基板1〇〇上之構成。遮光 部110係半透光膜101、相移調整膜102及遮光膜1〇3依次積 層於透明基板100上而成。半透光部115係半透光膜1〇1形 成於透明基板100上而成^透光部12〇係使透明基板10〇露 出而成。在遮光部110與透光部120之交界部分，形成有半 透光膜101上之相移調整膜102部分露出而成之移相器部 111。 154646.doc •10· 201214021 透明基板100作為包含含有例如石英（Si〇2)玻璃或Si〇2、 Al2〇3、b2〇3、R0(R係鹼土類金屬）、R2〇(R2係鹼金屬）等 之低膨脹玻璃等之平板構成。透明基板100之主面（表面及 背面）經研磨等而平坦且平滑地構成。透明基板100例如可 成一邊為2000 mm〜2400 mm左右之方形。透明基板1〇〇之 厚度例如可為3 mm〜20 mm左右。 半透光膜101包含含有鉻（Cr)之材料，例如包含氮化鉻 (CrN)、氧化鉻（CrO)、氧氮化鉻（Cr〇N)、氟化鉻（CrF)等。 半透光膜101例如以可使用包含含有硝酸第2鈽氨 ((NH4)2Ce(N〇3)6)及過氯酸（HCl〇4)之純水之鉻用蝕刻液之 方式構成。又，半透光膜101具有相對於氟（F)系蝕刻液（或 蝕刻氣體）之蝕刻耐性，如後述作為使用氟（F)系蝕刻液（或 钱刻氣體）钱刻相移調整膜102時之蝕刻阻檔層而發揮功 能。 相移調整膜102包含含有鉬（Mo)等金屬材料與矽（si)之材 料’例如包含MoSix、MoSiN、MoSiON、MoSiCON等。相 移調整膜102以可使用氟（F)系蝕刻液（或蝕刻氣體）蝕刻之 方式構成。又’相移調整膜102具有相對於上述鉻用钱刻 液之姓刻耐性，如後述作為使用鉻用蝕刻液蝕刻遮光膜 103時之蝕刻阻擋層而發揮功能。 遮光膜103實質包含鉻（Cr)。另，若於遮光膜1〇3之表面 積層Cr化合物（CrO、CrC、CrN等）（未圖示），則可使遮光 膜103之表面具有反射抑制功能。遮光膜ι〇3以可使用上述 鉻用蝕刻液蝕刻之方式構成。 154646.doc 201214021 遮光部110 '半透光部】】5及透光部120以例如相對於具 有i線〜g線範圍内之代表波長之曝光用光，具有各個特定 範圍内之透射率之方式構成。即’遮光部11〇以遮光（光透 射率約0%)上述曝光用光之方式構成。又，透光部12〇以約 100°/。透射上述曝光用光之方式構成。又，半透光部115以 使曝光用光之透射率降低至20〜80%(使充分廣之透光部120 之透射率為100%時。以下相同），較佳為3〇〜6〇%左右之方 式構成。設定構成半透光部115之半透光膜1〇1之材質及厚 度’因而半透光部115之透射率可任意控制。另，所謂i線 (3 65 nm)、h線（405 nm)、g線（43 6 nm)，係水銀（Hg)之主要 發光光譜。又，此處所謂代表波長，係丨線、h線、g線中 任一者之任一波長。 形成於遮光部110與透光部120之交界部分之移相器部 111 ’係以使透射移相器部111之曝光用光之相位僅移動特 定值之方式構成。具體言之，以具有i線〜g線範圍内之代 表波長之曝光用光透射移相器部111時之相移量與上述曝 光用光透射透光部120時之相移量之差成90度以上、270度 以内，更佳為150度以上、210度以内之方式構成。進而更 佳為i線〜g線範圍之所有曝光用光透射移相器部1 1 1時之相 移量與上述曝光用光透射透光部120時之相移量之差可在 上述各範圍以内。藉此，透射透光部120藉由繞射向移相 器部111側進入之曝光用光與透射移相器部111之曝光用光 將互相干擾抵消。其結果，如後述，對形成於被轉印體上 之抗蝕膜經由多調式光罩10照射曝光用光時，可抑制對向 154646.doc •12· 201214021 於遮光部110與透光部12〇之交界部分之抗蝕膜之感光，可 將側壁形狀尖銳（具有急劇上升之形狀）之抗蝕圖案形成於 被轉印體上。 半透光部115之相移量以不滿特定值之方式構成。具體 5之’以具有上述代表波長之曝光用光透射半透光部115 時之相移量與上述曝光用光透射透光部12〇時之相移量之 差不滿60度，較佳為不滿3〇度之方式構成。藉此，可抑制 透射透光部120之曝光用光與透射半透光部U5之曝光用光 互相干擾抵消。其結果，對形成於被轉印體上之抗蝕膜經 由多調式光罩10照射曝光用光時，不會在半透光部115與 透光部120之交界部分產生不必要之暗部，可進而確實使 抗餘膜感光。 另，移相器部111之相移量以構成移相器部丨丨丨之半透光 膜101之相移量與相移調整膜102之相移量之重疊而規定。 如上述，半透光部115之相移量（半透光膜101之相移量）不 滿60度，較佳為不滿3〇度。藉由調整相移調整膜之材 料及厚度，而可實質控制移相器部ηι之相移量。另，半 透光部115由於不具有相移調整膜1〇2 ’因此半透光部ιΐ5 之透射率不依存於相移調整膜1〇2之材料或厚度。即，根 據本實施形態，可獨立控制半透光部115之透射率與移相 器部111之相移量。 另，移相器部111之寬度，即相移調整膜102之露出面之 寬度（圖6中稱作W)可為10 nm以上1〇〇 μηι以下較佳為 nm以上1000 以下，進而佳為50 nm以上500 nm以下。 154646.doc 13 201214021 另，如後述，利用濕式蝕刻時之側蝕刻而形成該移相器部 111之情形中’可使上述寬度為nm以上500 nm以下，更 佳為50 rim以上200 nm以下。成如此寬度因而易獲得上述 效果。 圖6係本實施形態之多調式光罩1〇所具備之轉印用圖案 之部分平面圖。如此’遮光部110、透光部120及半透光部 115之平面形狀對應於形成於作為被轉印體之液晶顯示裝 置用基板上之電路圖案（裝置圖案）而構成各種形狀。另， 在遮光部110與透光部120之交界部分形成有移相器部 111。 圖2係例示藉由使用多調式光罩10之圖案轉印步驟形成 於被轉印體3 0上之抗蝕圖案3 〇2p之部分剖面圖。抗姓圖案 302p係藉由對形成於被轉印體3〇上之正型抗蝕膜3〇2經由 多調式光罩10照射曝光用光並顯影而形成。被轉印體3〇具 備基板300、依次積層於基板300上之金屬薄膜或絕緣層、 半導體層等任意被加工層301，正型抗蝕膜302係於被加工 層301上以均一厚度預先形成者。另，構成被加工層3〇1之 各層亦可以相對於各層之上層之蝕刻液（或蝕刻氣體）具有 耐性之方式構成。 若經由多調式光罩10對正型抗蝕膦302照射上述曝光用 光’則於遮光部11〇中曝光用光不透射，又，曝光用光之 光量以半透光部丨15、透光部120之順序而階段性增加。並 且’正型抗蝕膜302在遮光部110、半透光部115之各個對 應區域内膜厚依次變薄，在對應於透光部12〇之區域内被 154646.doc 201214021 除去。如此，於被轉印體30上形成膜厚階段性不同之抗飯 圖案302p。 形成抗蝕圖案302p後，將在未以抗蝕圖案3〇2p覆蓋之區 域（對應於透光部120之區域）露出之被加工層3〇1從表面側 依次蝕刻除去。然後，將抗蝕圖案302p灰化（減膜），除去 膜厚薄之區域（對應於半透光部115之區域），依次蝕刻並除 去新露出之被加工層3 01。如此，使用膜厚階段性不同之 抗姓圖案3〇2p，從而實施先前之分成2片光罩之步驟，可 削減光罩片數，可簡化光微影步驟。 另’如上述’透射透光部120藉由繞射向移相器部11!側 進入之曝光用光與透射移相器部111之曝光用光係以互相 干擾抵消之方式構成。因此，可抑制遮光部110與透光部 120之交界部分之抗蝕膜之感光’可將側壁形狀尖銳（具有 急劇上升之形狀）之抗蝕圖案3〇2p形成於被轉印體上。 又’透射透光部120之曝光用光與透射半透光部115之曝光 用光係以由干擾之抵消變小之方式構成。因此，在半透光 部115與透光部12〇之交界部分不會產生不必要之暗部，可 進而確實使正型抗蝕膜302感光。另，正型抗蝕膜302之感 光不良例如成為引起抗蝕圖案3〇2p之形狀不良或被加工層 301之钮刻不良之要因。 (2)多調式光罩之製造方法 接著’針對本實施形態之多調式光罩10之製造方法，一 面參照圖3進行說明。 (空白光罩準備步驟） 154646.doc -15- 201214021 首先，如圖3(a)所例示，準備於透明基板ι〇〇上依次形成 半透光膜101、相移調整膜102、遮光膜1〇3，於最上層形 成第1抗蝕膜104之空白光罩10b。另，第i抗蝕膜1〇4可利 用正型光抗蝕材料或負型光抗蝕材料構成。根據以下說 明，第1抗蝕膜104係利用正型光抗蝕材料形成者。第2抗 蝕膜104例如可使用狹縫式塗布機或旋轉塗布機等形成。 另，準備空白光罩1 Ob時，分別選擇半透光膜丨〇丨及相移調 整膜102之材質、厚度，以使透射半透光部115之曝光用光 之光透射率及透射移相器部U1之曝光用光之相移量等滿 足上述條件。 (第1抗触圖案形成步驟） 接著，對空白光罩l〇b利用雷射描繪機等進行描繪曝 光，使第1抗蝕膜104感光，利用喷霧方式等方法對第】抗 蝕膜104供給顯影液而實施顯影，形成至少覆蓋遮光部1 10 之形成預定區域之第蝕圖案104ρ。即，係後述之第2蝕 刻步驟中使遮光膜103側蝕刻而形成移相器部lu時，以遮 光部110保持特定區域而形成之方式形成至少覆蓋遮光部 11〇之形成預定區域之第1抗蝕圖案1041)者。將形成有第j 抗蝕圖案104p之狀態例示於圆3(b)。 (第1蝕刻步驟） 接著，將所形成之第1抗飯圖案1料口作為遮罩，敍刻遮 光膜103而形成遮光膜圖案。遮光膜1〇3之触刻可利用 喷霧方式4方法將上述絡用姓刻液供給於遮光膜而進 行此時，基底之相移調整膜102作為敍刻阻擋層而發揮 154646.doc -16· 201214021 功能。 接著’將第1抗触圖案l〇4p或遮光膜圖案i〇3p作為遮 罩’蝕刻相移調整膜102而形成相移調整膜圖案1 〇2p ’使 半透光膜101部分露出。相移調整膜i 〇2之蝕刻可將氟（F) 系蚀刻液（或银刻氣體）供給於相移膜102而進行β此時，基 底之半透光膜101作為蝕刻阻擋層而發揮功能。將形成有 遮光膜圖案103ρ及相移調整膜圖案102ρ之狀態例示於圖 3(c)。另’將遮光膜圖案ι〇3ρ作為遮罩而蝕刻相移調整膜 102時，亦可預先剝離第1抗触圖案丨〇4ρ後進行。 (第2抗蝕膜形成步驟） 接著’除去第1抗#圖案1 〇4ρ後，於具有遮光膜圖案 1〇3ρ及露出之半透光膜ιοί之空白光罩i〇b上之全面，形成 第2抗姓膜105。第1抗蚀圖案1 〇4p使剝離液等與第1抗钮圖 案l〇4p接觸從而可除去。第2抗蝕膜1〇5與第1抗蝕膜1〇4相 同，例如可使用狹縫式塗布機或旋轉塗布機等而形成。將 形成有第2抗蝕膜1 〇5之狀態例示於圖3(d)。 (第2抗蝕圖案形成步驟） 接著，利用雷射描繪機等進行描繪曝光，使第2抗蝕膜 1〇5感光，利用喷霧方式等方法對第2抗蝕膜1〇5供給顯影 液而實施顯影’形成分別至少覆蓋遮光部110之形成預定 區域及半透光部115之形成預定區域之第2抗蝕圖案ι〇5ρ。 將形成有第2抗钱圖案l〇5p之狀態例示於圖3(e)。 (第2蝕刻步驟） 接著，將所形成之第2抗蝕圖案l〇5p作為遮罩並蝕刻半 154646.doc •17- 201214021 透光膜101而形成半透光膜圓案l〇lp，且使透明基板100部 分露出而形成透光部120〇再者，對遮光膜圖案1〇3p之露 出侧部亦進行蝕刻（側蝕刻），使相移調整膜圖案丨〇2p部分 露出而形成移相器部111。然後，相移調整膜！ 〇2之露出面 之寬度變成10 nm以上500 nm以下，較佳為50 nm以上200 nm以下後，停止蝕刻。半透光膜1〇1及遮光膜圖案1〇3p之 触刻可將鉻用蝕刻液利用喷霧方式等方法供給於半透光膜 1 〇 1之露出面及遮光膜圖案1 〇3p之側部而進行。將經實施 第2蝕刻步驟之狀態例示於圖3(f)。 (第2抗蝕圖案除去步驟） 接著’除去第2抗敍圖案1 〇5p，結束本實施形態之多調 式光罩10之製造。使剝離液等與第2抗触圖案1〇5p接觸， 從而第2抗蝕圖案1 〇5p可除去。將除去第2抗蝕圖案之狀態 例示於圖3(g)。 (3)本實施形態之效果 根據本實施形態，奏效以下所示之1個或複數個效果。 (a)根據本實施形態，以具有i線〜g線範圍内之代表波長之 曝光用光透射移相器部111時之相移量與上述曝光用光透 射透光部120時之相移量之差成90度以上、270度以内，更 佳為150度以上、210度以内之方式構成。藉此，透射透光 部120藉由繞射向移相器部U1側進入之曝光用光與透射移 相器部111之曝光用光將互相干擾抵消。其結果，對形成 於被轉印體上之抗蝕膜經由多調式光罩10照射曝光用光 時，可抑制對向於遮光部110與透光部12〇之交界部分之抗 154646.doc -18 - 201214021 蝕膜之感光，可將側壁形狀尖銳（具有急劇上升之形狀）之 抗触圖案形成於被轉印體上。 (b) 根據本實施形態，以具有上述代表波長之曝光用光透射 半透光部115時之相移量與上述曝光用光透射透光部12〇時 之相移量之差不滿60度，較佳為不滿3〇度之方式構成。藉 此，可抑制透射透光部120之曝光用光與透射半透光部丄1 5 之曝光用光互相干擾抵消。其結果，對形成於被轉印體上 之抗蝕膜經由多調式光罩10照射曝光用光時’不會在半透 光部115與透光部12〇之交界部分產生不必要之暗部，可進 而確實使抗触膜感光。 (c) 根據本實施形態’調整相移調整膜1〇2之材料及厚度， 從而移相器部111之相移量可實質上控制。又，半透光部 115不具有相移調整膜1〇2,因此半透光部115之透射率不 依存於相移調整膜102之材料或厚度。即，根據本實施形 態，可獨立控制半透光部115之透射率與移相器部U1之相 移量。 (d) 根據本實施形態，移相器部丨丨丨之寬度，即相移調整膜 102之露出面之寬度為1〇 ηηι以上1〇〇〇 nm以下，較佳為1〇 nm以上500 nm以下’更佳為5〇 nm以上200 nm以下。成如 此寬度從而易獲得上述效果。 (e) 根據本實施形態，第2蝕刻步驟中，將第2抗蝕圖案ι〇5ρ 作為遮罩而蝕刻半透光膜1〇1，且將遮光膜圖案102p之側 部側蝕刻，使相移調整膜1〇2?)部分露出。即，利用側蝕 刻，從而以2次光微影步驟形成遮光膜圖案1〇3p、相移調 154646.doc 19 201214021 整膜圖案102p、及半透光膜圖案101p之3種不同之圖案。 藉此，可削減多調式光罩1 〇之製造步驟中之光微影步驟 數°換言之，根據本實施形態，藉由選擇半透光膜1(H、 相移調整膜102、遮光膜103之素材，而可進行濕蝕刻時利 用側蝕刻進行之圖案化。根據本實施形態，利用2次蝕刻 而可將3個膜圖案化。為獲得該優點，而將例如半透光膜 !〇1及遮光膜103之素材作為可利用相同蝕刻劑蝕刻之素材 (例如Cr系），將相移調整膜1〇2作為相對於該蝕刻劑具有耐 性之素材（例如MoSi系）。 <本發明之其他實施形態> 接著，一面參照圖4、圖5及圖7說明本發明之其他實施 形態。圖4係本實施形態之多調式光罩2〇之部分剖面圖。 圖5係本實施形態之多調式光罩2〇之製造步驟之流程圖。 圖7係本實施形態之多調式光罩2〇所具備之轉印用圖案之 部分平面圖。 (1)多調式光罩之構成 如圖4所示，本實施形態中，遮光部11〇内之與半透光部 115鄰接之部分上，進而形成相移調整膜1〇1部分露出而成 之第2移相器部112之點與上述實施形態不同。 形成於遮光部110與半透光部Π5之交界部分之第2移相 器部112係以使透射第2移相器部112之曝光用光之相位僅 偏移特定值之方式構成。具體言之，以具有丨線〜g線範圍 内之代表波長之曝光用光透射第2移相器部112時之相移量 與上述曝光用光透射半透光部115時之相移量之差成9〇度 154646.doc •20- 201214021 以上270度以内，更佳為i5〇度以上21〇度以内之方式構 成。藉此，透射半透光部115藉由繞射向第2移相器部112 侧進入之曝光用光與透射第2移相器部112之曝光用光將互 相干擾抵消。其結果’對形成於被轉印體上之抗蝕膜經由 夕調式光罩1 0照射曝光用光時’可抑制對向於遮光部1 i 〇 與半透光部115之交界部分之抗钱膜之感光，可將側壁形 狀尖銳（具有急劇上升之形狀）之抗蝕圖案形成於被轉印體 上。 另’第2移相器部112之寬度（圖7中稱作W')與移相器部 (第1移相器部）111相同，為l〇nm以上1〇〇 μηι以下，較佳為 10 nm以上1〇〇〇 nm以下，進而佳為5〇 nm以上500 nm以 下。成如此寬度從而易獲得上述效果。 圖7係本實施形態之多調式光罩2〇所具備之轉印用圖案 之部分平面圖。根據本實施形態，除在遮光部u 〇與透光 部120之交界部分形成第i移相器部m外，在遮光部11〇與 半透光部11 5之交界部分形成第2移相器部112。 根據本實施形態，以具有i線〜g線範圍内之代表波長之 曝光用光透射第1移相器部111時之相移量與上述曝光用光 透射透光部120時之相移量之差成120度以上240度以内， 更佳為150度以上210度以内之方式構成，藉此，透射透光 部120藉由繞射向移相器部1〖丨側進入之曝光用光與透射移 相器部111之曝光用光將互相干擾抵消。藉此，透射半透 光部115藉由繞射向第2移相器部112側進入之曝光用光與 透射第2移相器部112之曝光用光互相干擾抵消，且透射透 154646.doc •21· 201214021 光部120藉由繞射向第丨移相器部lu側進入之曝光用光與 透射第1移相器部111之曝光用光互相干擾抵消。其結果， 對形成於被轉印體上之抗蝕膜經由多調式光罩2〇照射曝光 用光時，可抑制對向於遮光部11〇與透光部12〇之交界部分 之抗蝕膜之感光，與對向於遮光部11〇與半透光部115之交 界部分之抗蝕膜之感光兩方，可於各個交界將側壁形狀尖 銳（具有急劇上升之形狀）之抗蝕圖案形成於被轉印體上。 又，以上述曝光用光透射半透光部115時之相移量與上 述曝光用光透射透光部120時之相移量之差成_6〇度以上6〇 度以内，更佳為-30度以上30度以内之方式構成。藉此， 可抑制透射透光部120之曝光用光與透射半透光部ι15之曝 光用光互相干擾抵消。其結果，對形成於被轉印體上之抗 姓膜經由多調式光罩10照射曝光用光時，不會在半透光部 115與透光部120之交界部分產生不必要之暗部，可進而確 實使抗蝕膜感光。 又’如圖8所示，亦可僅在遮光部110與半透光部115之 交界部分設置移相器部。如此則可抑制對向於遮光部1 i 〇 與半透光部115之交界部分之抗蝕膜之感光，可將該交界 部分之側壁形狀尖銳（具有急劇上升之形狀）之抗蝕圖案形 成於被轉印體上》 (2)多調式光罩之製造方法 針對具有如此構成之多調式光罩20之製造方法，參照圖 5進行說明。 (空白光罩準備步驟） 154646.doc -22- 201214021 首先，如圖5(a)所例示，準備於透明基板1〇〇上依次形成 有半透光膜101、相移調整膜102、遮光膜1〇3，於最上層 形成有第1抗敍膜104之空白光罩i〇b。各構件之材料、厚 度等與上述實施形態相同地選擇，以使各構件之光學特性 等滿足上述條件。 (第1抗蝕圖案形成步驟） 接著，對空白光罩10b以與上述實施形態相同之方法實 施曝光、顯影’形成覆蓋遮光部110之形成預定區域之第i 抗蝕圖案104p。 (第1姓刻步驟） 接著，將所形成之第1抗蝕圖案1041)作為遮罩，以與上 述實施形態相同之方法蝕刻遮光膜103，形成遮光膜圖案 l〇3p。此時，基底之相移調整膜1〇2作為蝕刻阻擋層而發 揮功能。將形成有遮光膜圖案1031)之狀態例示於圖5(b)。 (第2抗蝕膜形成步驟） 接著’除去第1抗#圖案1 〇4p後，於具有遮光膜圖案 1〇3Ρ及露出之相移調整膜102之空白光罩1〇b上之全面形成 第2抗蝕膜105。第！抗蝕圖案⑺邮之除去、第2抗蝕膜1〇5 之形成可使用與上述實施形態相同之方法。 (第2抗蝕圖案形成步驟） 接著，以與上述貫施形態相同之方法將第2抗蝕膜1〇5曝 光、顯影，形成分別覆蓋遮光部11〇之形成預定區域、位 於遮光部110與透光部120之交界部分之第1移相器部lu之 形成預定區域、及位於遮光部110與半透光部115之交界部 154646.doc •23· 201214021 分之第2移相器部112之形成預定區域之第2抗蝕圖案 l〇5p。將形成有第2抗蝕圖案l〇5p之狀態例示於圖5(c)。 (第2蝕刻步驟） 接著，將所形成之第2抗蝕圖案l〇5p作為遮罩，以與上 述實施形態相同之方法蝕刻相移調整膜102，形成相移調 整膜圖案102p，且形成半透光部115與第1移相器部11丨與 第2移相器部112。將經實施第2蝕刻步驟之狀態例示於圖 5(d)。 (第3抗蝕膜形成步驟） 然後’除去第2抗蚀圖案l〇5p後，於具有遮光膜圖案 103p、相移調整膜圖案1 〇2p、露出之半透光膜ιοί之空白 光罩l〇b上之全面’形成第3抗蝕膜106。第2抗蝕圖案ι〇5ρ 之除去、第3抗蝕膜106之形成可使用與上述實施形態相同 之方法。 (第3抗蝕圖案形成步驟） 接著，以與上述實施形態相同之方法，將第3抗蝕膜1〇6 曝光、顯影’形成覆蓋除透光部120之形成預定區域外之 區域之第3抗触圖案l〇6p。另，所謂除透光部12〇之形成預 定區域外之區域，係遮光部110之形成預定區域、第1移相 器部111之形成預定區域、第2移相器部Η]之形成預定區 域及半透光部115之形成預定區域。將形成有第3抗蝕圖案 l〇6p之狀態例示於圖5(e)。 (第3蝕刻步驟） 接著’將所形成之第3抗蚀圖案1 〇6p作為遮罩，以與上 154646.doc -24· 201214021 述實施形態相同之方法蝕刻半透光膜101而形成半透光膜 圖案ΐοίρ ’且使透明基板100部分露出而形成透光部1〇〇。 將經實施第3银刻步驟之狀態例示於圖5(f)。 (第3抗蝕圖案除去步驟） 接著，以與上述實施形態相同之方法除去第3抗蝕圖案 l〇6p ’結束本實施形態之多調式光罩2〇之製造。第3抗姓 圖案106P之除去可使用與上述實施形態相同之方法。將除 去第3抗蝕圖案之狀態例示於圖5(g)。 本實施形態之多調式光罩20中，亦奏效與上述實施形態 之多調式光罩10相同之效果。 再者，根據本實施形態’以具有i線〜g線範圍内之代表 波長之曝光用光透射第2移相器部Π2時之相移量與上述曝 光用光透射半透光部115時之相移量之差成9〇度以上27〇度 以内’更佳為150度以上210度以内之方式構成。藉此，透 射半透光部115藉由繞射向第2移相器部112側進入之曝光 用光與透射第2移相器部112之曝光用光將互相干擾抵消。 其結果’對形成於被轉印體上之抗蝕膜經由多調式光罩 照射曝光用光時，可抑制對向於遮光部U〇與半透光部ιΐ5 之交界部分之抗#膜之感光’可將侧壁形狀尖銳（具有魚 劇上升之形狀）之抗蝕圖案形成於被轉印體上。 <本發明之進而其他實施形態> 再者’一面參照圖9說明本發明之其他實施形態。圖9係 顯示本實施形態之多調式光罩之部分剖面圖、透射該光罩 之曝光用光之振幅強度曲線以及光強度部分曲線、及形成 154646.doc •25· 201214021 於被轉印體上之抗蝕圖案之剖面圖，係顯示各個關係者。 在遮光部110與半透光部115之交界具有移相器部112之 本發明之光罩中’藉由透射移相器部丨12，而以虛線表示 相對於透射半透光部115之曝光用光之相位差為9〇度以上 270度以内之曝光用光之振幅強度，與透射半透光部U5& 透光部120之曝光用光之振幅強度。再者，以實線表示合 成該等曝光用光作為光強度者。 光強度曲線之（A)部分，係表示透射移相器部1丨2之曝光 用光與透射半透光部之曝光用光因干擾而抵消之光強度減 少之部分’光強度曲線之（B)部分’係表示透射移相器部 112之曝光用光。若移相器之寬度超過1〇〇〇 nm，則不易產 生因其以下之線寬時產生之繞射之影響所造成之透射率之 下降，透射移相器部之曝光用光之（B)部分之光強度變大 之情形中（圖中之閾值以上），因抗触劑感光而對抗银劑給 予不必要之膜厚之變化。因此’為防止該影響而移相器部 之透射率在曝光用光具有相移效果之強度範圍内盡可能低 較佳。又，若光未全部透射，則本發明之作用不產生，因 此例如移相器部11 2之透射率可為5%以上20%以下。更佳 為5°/。以上10%以下。如此即使在寬度超過1000 nm之移相 器部上’在由透射移相器部之曝光用光而感光之抗蝕劑之 區域（B)與實質上對應於遮光部之抗蝕劑之區域之間，亦 不會產生厚度之偏差。 因此，本發明之移相器部在遮光部與半透光部之交界， 或遮光部與透光部之交界，使用本發明之光罩進行圖案轉 154646.doc •26· 201214021 =’與遮光部具有實質上㈣之遮 =時可使移相器部成為與遮光部具有同等遮= 加移相器部之寬度時，需要減少該部分遮光部之 另’此時之移相器部之寬度考慮到圖案設計之容易度或 製程之容易度等，可為1Gnm以上咖师以下。 、，因此I發明之光罩因移相器部具有與遮光部同等之遮 、，因此可將移相器部作為遮光性圖案而設計光罩圖 案。 又’對於設於遮光部與透光部之交界之移相器部，亦可 與遮光。P與半透光部之交界所設之移相器部同樣地處理。 此時亦例如移相器部之透射率為5%以上20%以下較佳透 射率為5%以上1 〇%以下更佳。 以上，具體說明了本發明之實施形態，但本發明不限於 上述實施形態，在不脫離其主旨之範圍内可進行各種變 更。 【圖式簡單說明】 圖1係本發明之一實施形態之多調式光罩之部分剖面 圖。 圖2係顯示使用本發明之一實施形態之多調式光罩之圖 案轉印方法之剖面圖。 圖3(a)-(g)係本發明之一實施形態之多調式光罩之製造 步驟之流程圖。 圖4係本發明之其他實施形態之多調式光罩之部分剖面 154646.doc •27· 201214021 圖。 圖5(a)-(g)係本發明之其他實施形態之多調式光罩 造步驟之流程圖。 之製 圖6係本發明之—實施形態之多調式光罩所具 用圖案之部分平面圖。 八 轉印 圖7係本發明之其他實施形態之多調式光罩所具備 印用圖案之部分平面圖。 之轉 圖8係本發明之其他實施形態之多調式光罩所具備之轉 印用圖案之部分平面圖。 圖9係顯示使用本發明之其他實施形態之多調式光罩之 圖案轉印方法之剖面圖。 ° 【主要元件符號說明】 10 多調式光罩 20 多調式光罩 100 透明基板 101 半透光膜 102 相移調整膜 103 遮光膜 110 遮光部 111 移相器部（第1移相器部） 112 第2移相器部 115 半透光部 120 透光部 154646.doc -28-In the phase shifter portion, the amount of phase I when the exposure light is transmitted through the second phase shifter portion is equal to or greater than 270 degrees within the phase shift amount when the exposure light is transmitted through the semi-transmissive portion. According to a seventh aspect of the invention, the multi-modulation reticle according to any one of the first to fourth aspect, wherein the amount of phase shift when the exposure light is transmitted through the semi-transmissive portion and the exposure light are transmitted through the transparent The difference in phase shift amount at the time of the light portion is less than (6) degrees. The method of manufacturing the multi-mode mask of the eighth aspect of the present invention is to form a transparent portion (four) (four) including a light shielding portion, a light transmitting portion, and a semi-light transmitting portion in a transparent manner. The substrate has a step of preparing a semi-transmissive film, a phase shift adjusting film, a light shielding film, and a blank mask in which the first resist film is sequentially laminated on the transparent substrate; and drawing the first resist film and Developing a step of forming a second resist pattern covering at least a predetermined region of the light shielding portion; and forming a first etching step of etching the light shielding film and the phase shift adjusting film by using the first resist pattern as a mask; a step of forming a second resist film on the blank mask in which the first etching step has been performed after the first resist pattern; and drawing and developing the second resist film to form at least the light shielding portion Predetermined area and the foregoing a step of forming a second resist pattern in the predetermined region of the light transmitting portion; etching the semi-transmissive film by using the second resist pattern as a mask, and etching the side portion of the light shielding film to adjust the phase shift 154646. Doc 201214021 film °P knife exposed 'the second touch step of forming the phase shifter portion; and the step of removing the first anti-twist pattern, the exposure light having the representative wavelength in the range of i line to g line is transmitted through the phase shifter The difference between the phase shift amount of the material and the phase shift amount when the exposure light is transmitted through the light transmitting portion is 90 degrees or more and 270 degrees or less. The method of manufacturing the multi-tone mask of the ninth aspect of the present invention is to provide occlusion. The specific transfer pattern of the P itU and the semi-transmissive portion is formed on the transparent substrate, and the semi-transparent film, the phase shift adjustment film, the light shielding film, and the first resist film are sequentially laminated on the transparent substrate. a step of blank masking: drawing and developing the first anti-scratch film to form an i-th resist pattern covering the pre-turn region of the shading => ;; and using the first (one) etched pattern as a mask a second etching step of etching the light shielding film with a cover; a step of forming a second resist film on the blank mask in which the second etching step has been performed after removing the first resist pattern; and the second resist The film is formed by drawing and displaying a plurality of features, and forming a second resist pattern covering a predetermined region in which the predetermined area of the light-shielding portion is formed and a phase shifter portion located at a boundary portion between the light-shielding portion and the light-transmitting portion; The second resist pattern is used as a mask to etch the phase shift adjustment film to form a second etching step of the semi-transmissive portion and the phase shifter portion. After the second resist pattern is removed, the second step is performed. The aforementioned etching step a step of forming a third resist film on the blank mask; and drawing and developing the third resist film to form a third resist pattern covering a region other than the predetermined region in which the light transmitting portion is formed; a third anti-mite pattern as a mask for engraving the third semi-transparent film; and a step of removing the third resist pattern; and an exposure light having a representative wavelength within a range of a 丨 line to a line The amount of phase shift when the phase shifter portion is transmitted is 90 degrees or more and 270 degrees or less from the difference in the amount of phase shift of the light transmitting portion when the exposure light is transmitted through the front 154646.doc 201214021. According to a seventh aspect of the present invention, in the method of manufacturing a multi-tone mask according to the seventh aspect, in the step of forming the second resist pattern in #, a cover is formed at a boundary between the light shielding portion and the semi-transmissive portion. a part of the second phase shifter portion forming the k-th body 2 resist pattern in a predetermined region, and in the second etching step, the second phase shifter portion is formed, 1 is right-handed, and _b 1 liter is 1 The difference between the phase shift amount when the exposure S light of the representative wavelength in the range of the line to the g line is transmitted through the second phase shifter portion and the phase shift amount when the exposure light is transmitted through the semi-transmissive portion is 9 degrees or more. Within 270 degrees. The eleventh aspect of the invention, wherein the phase shift adjusting film is used for etching the light shielding film and the semi-transmissive film, as described in any one of the sixth to eighth aspects The etching solution or etching gas is resistant. A pattern transfer method according to a twelfth aspect of the present invention, comprising the multi-tone mask described in any one of the first to fifth aspects, or the manufacturing method according to any one of the sixth to ninth aspects In the multi-mode mask of the method, the resist film formed on the transfer target is irradiated with the exposure light, thereby transferring the transfer pattern onto the anti-surname film. According to a thirteenth aspect of the invention, the pattern transfer method of the first aspect of the invention, wherein the resist film formed on the transfer target body is substantially opposite to the exposure light portion corresponding to the phase shifter portion Does not have sensitivity. [Effects of the Invention] The multi-tone mask according to the present invention, the method of manufacturing the multi-mode mask, and the pattern transfer method using the multi-mode mask can suppress the boundary between the light-shielding portion and the light-transmitting portion. The portion or the boundary portion of the light-shielding portion and the semi-transmissive portion is affected by the diffraction of light. A resist pattern having a sharp side wall shape (having a sharply rising shape) may be formed on the object to be transferred. [Embodiment] <An embodiment of the present invention> Hereinafter, an embodiment of the present invention will be described with reference mainly to Figs. 1 to 3 and Fig. 6 . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partial cross-sectional view showing a multi-tone mask of the present embodiment. Fig. 2 is a cross-sectional view showing a pattern transfer method using the multi-tone mask 10. Fig. 3 is a flow chart showing the manufacturing steps of the multi-tone mask 1 of the embodiment. Fig. 6 is a partial plan view showing a transfer pattern of the multi-mode mask 1 of the embodiment. (1) Configuration of multi-mode mask The multi-mode mask 10 shown in Fig. 1 is used, for example, in the manufacture of a thin film transistor (TFT) substrate for a liquid crystal display (LCD). However, Fig. 1 exemplifies a laminated structure of a multi-mode mask, and the actual pattern is not necessarily the same. The multi-mode mask 10 has a configuration in which a specific transfer pattern including the light shielding portion 110, the semi-transmissive portion 115, and the light transmitting portion 120 is formed on the transparent substrate 1A. The light-shielding portion 110 is formed by sequentially laminating the semi-transmissive film 101, the phase shift adjusting film 102, and the light-shielding film 1〇3 on the transparent substrate 100. The semi-transmissive portion 115 is formed by forming a semi-transmissive film 1〇1 on the transparent substrate 100 to form a transparent portion 12 such that the transparent substrate 10 is exposed. At a boundary portion between the light shielding portion 110 and the light transmitting portion 120, a phase shifter portion 111 in which the phase shift adjusting film 102 on the semi-transmissive film 101 is partially exposed is formed. 154646.doc •10· 201214021 The transparent substrate 100 contains, for example, quartz (Si〇2) glass or Si〇2, Al2〇3, b2〇3, R0 (R-alkaline earth metal), R2〇 (R2 alkali metal) A flat plate of a low expansion glass or the like. The main surface (surface and back surface) of the transparent substrate 100 is flat and smooth by polishing or the like. The transparent substrate 100 can be, for example, a square having a side of about 2000 mm to 2400 mm. The thickness of the transparent substrate 1 can be, for example, about 3 mm to 20 mm. The semi-transmissive film 101 contains a material containing chromium (Cr), and includes, for example, chromium nitride (CrN), chromium oxide (CrO), chromium oxynitride (Cr〇N), chromium fluoride (CrF), or the like. The semi-transmissive film 101 can be formed, for example, by using an etching solution for chromium containing pure water containing nitric acid diamine ((NH4)2Ce(N〇3)6) and perchloric acid (HCl〇4). Further, the semi-transmissive film 101 has an etching resistance with respect to a fluorine (F)-based etching liquid (or an etching gas), and as described later, a phase shift adjusting film 102 is used as a fluorine (F)-based etching liquid (or a money-cutting gas). At the same time, the barrier layer is etched to function. The phase shift adjusting film 102 contains a material containing a metal material such as molybdenum (Mo) and bismuth (si), for example, including MoSix, MoSiN, MoSiON, MoSiCON, or the like. The phase shift adjusting film 102 is formed by etching using a fluorine (F)-based etching liquid (or etching gas). Further, the phase shift adjusting film 102 has a resistance to the etching of the chromium etching solution, and functions as an etching stopper layer when the light shielding film 103 is etched using an etching solution for chromium as will be described later. The light shielding film 103 substantially contains chromium (Cr). Further, when a Cr compound (CrO, CrC, CrN or the like) (not shown) is laminated on the surface of the light-shielding film 1A3, the surface of the light-shielding film 103 can have a reflection suppressing function. The light-shielding film ι 3 is formed by etching using the above-described chromium etching solution. 154646.doc 201214021 Light-shielding portion 110 'semi-transmissive portion】 5 and the light-transmitting portion 120 have a transmittance in each specific range, for example, with respect to exposure light having a representative wavelength in the range of i-line to g-line. Composition. That is, the light-shielding portion 11 is configured to block light by the above-described exposure light by light shielding (light transmittance of about 0%). Further, the light transmitting portion 12 is approximately 100 °/. It is configured to transmit the above-mentioned exposure light. Further, the semi-transmissive portion 115 reduces the transmittance of the exposure light to 20 to 80% (to make the transmittance of the light-transmitting portion 120 sufficiently wide, the same applies hereinafter), preferably 3 to 6 〇. % of the way around. The material and thickness of the semi-transmissive film 1〇1 constituting the semi-transmissive portion 115 are set so that the transmittance of the semi-transmissive portion 115 can be arbitrarily controlled. In addition, the i-line (3 65 nm), the h-line (405 nm), and the g-line (43 6 nm) are the main luminescence spectra of mercury (Hg). Here, the representative wavelength is a wavelength of any one of a 丨 line, an h line, and a g line. The phase shifter portion 111' formed at the boundary portion between the light shielding portion 110 and the light transmitting portion 120 is configured such that the phase of the exposure light of the transmission phase shifter portion 111 is shifted by a specific value. Specifically, the difference between the phase shift amount when the exposure light having the representative wavelength of the i-line to the g-line is transmitted through the phase shifter portion 111 and the phase shift amount when the exposure light is transmitted through the light-transmitting portion 120 is 90. It is more than 270 degrees, more preferably 150 degrees or more and 210 degrees or less. Further, it is more preferable that the difference between the phase shift amount when all of the exposure light transmitting phase shifter portions 1 1 1 in the i-line to the g-line range and the phase shift amount when the exposure light is transmitted through the light transmitting portion 120 can be in the above respective ranges Within. Thereby, the transmission light transmitting portion 120 cancels the mutual interference by the exposure light that is diffracted toward the phase shifter portion 111 side and the exposure light of the transmission phase shifter portion 111. As a result, when the resist film formed on the transfer target is irradiated with the exposure light through the multi-mode mask 10, the opposite direction 154646.doc •12·201214021 can be suppressed in the light shielding portion 110 and the light transmission portion 12 as will be described later. The resist pattern of the resist film at the boundary portion of the crucible can be formed on the transfer target by a resist pattern having a sharp side wall shape (having a sharply rising shape). The amount of phase shift of the semi-transmissive portion 115 is configured to be less than a specific value. Specifically, the difference between the phase shift amount when the exposure light having the above-mentioned representative wavelength is transmitted through the semi-transmissive portion 115 and the phase shift amount when the exposure light is transmitted through the light transmitting portion 12 is less than 60 degrees, preferably dissatisfaction The structure of 3 degrees. Thereby, it is possible to suppress the exposure light of the transmissive light transmitting portion 120 from colliding with the exposure light of the transmissive semi-transmissive portion U5. As a result, when the resist film formed on the transfer target is irradiated with the exposure light via the multi-mode mask 10, unnecessary dark portions are not generated at the boundary portion between the semi-transmissive portion 115 and the light-transmitting portion 120. Further, the anti-surge film is sure to be made light. Further, the phase shift amount of the phase shifter portion 111 is defined by the overlap of the phase shift amount of the semi-transmissive film 101 constituting the phase shifter portion and the phase shift amount of the phase shift adjusting film 102. As described above, the phase shift amount of the semi-transmissive portion 115 (the phase shift amount of the semi-transmissive film 101) is less than 60 degrees, preferably less than 3 turns. By adjusting the material and thickness of the phase shift adjustment film, the phase shift amount of the phase shifter portion ηι can be substantially controlled. Further, since the semi-transmissive portion 115 does not have the phase shift adjusting film 1〇2', the transmittance of the semi-transmissive portion ι5 does not depend on the material or thickness of the phase shift adjusting film 1〇2. That is, according to the present embodiment, the transmittance of the semi-transmissive portion 115 and the phase shift amount of the phase shifter portion 111 can be independently controlled. Further, the width of the phase shifter portion 111, that is, the width of the exposed surface of the phase shift adjusting film 102 (referred to as W in FIG. 6) may be 10 nm or more and 1 〇〇μηι or less, preferably nm or more and 1000 or less, and further preferably 50 nm or more and 500 nm or less. 154646.doc 13 201214021 In the case where the phase shifter portion 111 is formed by side etching during wet etching, the above-described width can be set to be nm or more and 500 nm or less, and more preferably 50 rim or more and 200 nm or less. . Such a width is thus easy to obtain the above effect. Fig. 6 is a partial plan view showing a transfer pattern provided in the multi-mode mask 1 of the embodiment. The planar shape of the light-shielding portion 110, the light-transmitting portion 120, and the semi-transmissive portion 115 is formed into various shapes in accordance with a circuit pattern (device pattern) formed on the substrate for a liquid crystal display device as a transfer target. Further, a phase shifter portion 111 is formed at a boundary portion between the light shielding portion 110 and the light transmitting portion 120. Fig. 2 is a partial cross-sectional view showing the resist pattern 3 〇 2p formed on the transfer target 30 by the pattern transfer step using the multi-tone mask 10. The anti-surname pattern 302p is formed by irradiating the positive-type resist film 3〇2 formed on the transfer-receiving body 3 through the multi-mode mask 10 with exposure light and developing it. The substrate 3 to be transferred is provided with a substrate 300, a metal thin film or an insulating layer or a semiconductor layer or the like, which is laminated on the substrate 300 in this order, and the positive resist film 302 is formed on the processed layer 301 in a uniform thickness. By. Further, each of the layers constituting the processed layer 3〇1 may be formed to have resistance to the etching liquid (or etching gas) of the upper layer of each layer. When the light for exposure to the positive resist phosphine 302 is irradiated to the positive resist phosphine 302 via the multi-mode mask 10, the light for exposure in the light shielding portion 11 is not transmitted, and the amount of light for the exposure light is transmitted through the semi-transmissive portion 丨15. The order of the parts 120 is increased in stages. Further, the positive resist film 302 is thinned in the respective regions of the light-shielding portion 110 and the semi-transmissive portion 115, and is removed by 154646.doc 201214021 in the region corresponding to the light-transmitting portion 12A. In this manner, the rice-resistant pattern 302p having a different film thickness is formed on the transfer target body 30. After the resist pattern 302p is formed, the processed layer 3〇1 exposed in the region not covered by the resist pattern 3〇2p (corresponding to the region of the light transmitting portion 120) is sequentially removed and removed from the surface side. Then, the resist pattern 302p is ashed (reduced film), the thin film region (corresponding to the region of the semi-transmissive portion 115) is removed, and the newly exposed processed layer 301 is sequentially etched and removed. Thus, by using the anti-surname pattern 3〇2p having a different film thickness step, the previous step of dividing into two masks can be performed, and the number of masks can be reduced, and the photolithography step can be simplified. Further, the above-mentioned "transmissive light transmitting portion 120" is configured such that the exposure light which is diffracted toward the phase shifter portion 11 side and the light exposure system of the transmissive phase shifter portion 111 cancel each other out. Therefore, it is possible to suppress the light-resistance of the resist film at the boundary portion between the light-shielding portion 110 and the light-transmitting portion 120. The resist pattern 3?2p having a sharp-shaped side wall shape (having a sharply rising shape) can be formed on the object to be transferred. Further, the exposure light transmitted through the light transmitting portion 120 and the light exposure light transmitted through the semi-light transmitting portion 115 are configured to be reduced by the interference. Therefore, unnecessary dark portions are not generated at the boundary portion between the semi-transmissive portion 115 and the light transmitting portion 12, and the positive resist film 302 can be surely received. Further, the poor light resistance of the positive resist film 302 causes, for example, a shape defect of the resist pattern 3?2p or a defect in the button layer of the processed layer 301. (2) Method of manufacturing multi-mode mask Next, a method of manufacturing the multi-mode mask 10 of the present embodiment will be described with reference to Fig. 3 . (Blank mask preparation step) 154646.doc -15- 201214021 First, as illustrated in FIG. 3(a), a semi-transmissive film 101, a phase shift adjustment film 102, and a light shielding film 1 are sequentially formed on a transparent substrate 〇3, a blank mask 10b of the first resist film 104 is formed on the uppermost layer. Further, the i-th resist film 1〇4 may be formed of a positive photoresist material or a negative photoresist material. According to the following description, the first resist film 104 is formed of a positive photoresist material. The second resist film 104 can be formed, for example, by a slit coater or a spin coater. Further, when the blank mask 1 Ob is prepared, the materials and thicknesses of the semi-transmissive film 丨〇丨 and the phase shift adjusting film 102 are selected so that the light transmittance and transmission phase shift of the light for transmission through the translucent portion 115 are made. The amount of phase shift of the exposure light of the device U1 satisfies the above conditions. (1st anti-touch pattern forming step) Next, the blank mask 〇b is subjected to drawing exposure by a laser scanner or the like, and the first resist film 104 is exposed to light, and the first resist film 104 is applied by a method such as a spray method. The developer is supplied and developed, and at least the etched pattern 104p covering the predetermined region where the light shielding portion 1 10 is formed is formed. In other words, in the second etching step, which will be described later, when the light-shielding film 103 side is etched to form the phase shifter portion lu, the light-shielding portion 110 is formed to hold the specific region, and the first portion of the predetermined region where the light-shielding portion 11A is formed is formed. Resist pattern 1041). A state in which the jth resist pattern 104p is formed is exemplified in the circle 3(b). (First etching step) Next, the formed first anti-rice pattern 1 opening is used as a mask, and the light shielding film 103 is described to form a light shielding film pattern. The contact of the light-shielding film 1〇3 can be performed by applying the above-mentioned method to the light-shielding film by the spray method 4, and the phase shift adjustment film 102 of the substrate functions as a masking layer to exhibit 154646.doc -16 · 201214021 Features. Then, the first anti-contact pattern l〇4p or the light-shielding film pattern i〇3p is used as a mask to etch the phase shift adjustment film 102 to form a phase shift adjustment film pattern 1 〇 2p ′ to partially expose the semi-transmissive film 101. The etching of the phase shift adjusting film i 〇 2 can supply a fluorine (F)-based etching liquid (or silver etching gas) to the phase shift film 102 to perform β. At this time, the semi-transmissive film 101 of the substrate functions as an etching stopper. . A state in which the light-shielding film pattern 103ρ and the phase shift adjustment film pattern 102p are formed is exemplified in Fig. 3(c). When the phase shift adjustment film 102 is etched by using the light-shielding film pattern ι 〇 3 ρ as a mask, the first anti-touch pattern 丨〇 4 ρ may be peeled off beforehand. (Second Resist Film Forming Step) Next, after removing the first anti-pattern 1 〇 4 ρ, it is formed on the entire surface of the blank mask i 〇 b having the light-shielding film pattern 1 〇 3 ρ and the exposed semi-transmissive film ιοί The second anti-name film 105. The first resist pattern 1 〇 4p can be removed by bringing the peeling liquid or the like into contact with the first button pattern l〇4p. The second resist film 1〇5 is formed in the same manner as the first resist film 1〇4, and can be formed, for example, by a slit coater or a spin coater. A state in which the second resist film 1 〇 5 is formed is exemplified in Fig. 3(d). (Second Resist Pattern Forming Step) Next, the image is exposed by a laser scanner or the like, and the second resist film 1〇5 is exposed to light, and the second resist film 1〇5 is supplied with a developing solution by a method such as a spray method. On the other hand, the development is performed to form a second resist pattern ι 5ρ which covers at least a predetermined region where the light shielding portion 110 is formed and a predetermined region where the semi-light transmission portion 115 is formed. A state in which the second anti-money pattern l〇5p is formed is illustrated in Fig. 3(e). (Second etching step) Next, the formed second resist pattern 10p is used as a mask, and a half-transparent film case l〇lp is formed by etching the light-transmissive film 101 by a half 154646.doc • 17-201214021. The transparent substrate 100 is partially exposed to form the light transmitting portion 120. Further, the exposed side portions of the light shielding film patterns 1〇3p are also etched (side etching), and the phase shift adjusting film pattern 丨〇2p is partially exposed to form a phase shift. The unit 111. Then, the phase shift adjusts the film! The width of the exposed surface of 〇2 becomes 10 nm or more and 500 nm or less, preferably 50 nm or more and 200 nm or less, and the etching is stopped. The etch of the semi-transmissive film 1〇1 and the light-shielding film pattern 1〇3p can be supplied to the exposed surface of the semi-transmissive film 1 〇1 and the side of the light-shielding film pattern 1 〇3p by a method such as a spray method using a etchant. The Ministry is proceeding. A state in which the second etching step is performed is exemplified in Fig. 3(f). (Second resist pattern removing step) Next, the second resist pattern 1 〇 5p is removed, and the manufacture of the multi-mode mask 10 of the present embodiment is completed. When the peeling liquid or the like is brought into contact with the second resist pattern 1〇5p, the second resist pattern 1〇5p can be removed. The state in which the second resist pattern is removed is exemplified in Fig. 3(g). (3) Effects of the present embodiment According to the present embodiment, one or a plurality of effects shown below are effective. (a) According to the present embodiment, the phase shift amount when the exposure light having the representative wavelength in the range of i line to g line is transmitted through the phase shifter portion 111 and the phase shift amount when the exposure light is transmitted through the light transmitting portion 120 The difference is 90 degrees or more and 270 degrees or less, and more preferably 150 degrees or more and 210 degrees or less. Thereby, the transmission light transmitting portion 120 cancels the mutual interference by the exposure light that is diffracted toward the phase shifter portion U1 side and the exposure light of the transmission phase shifter portion 111. As a result, when the resist film formed on the transfer target is irradiated with the exposure light via the multi-mode mask 10, the anti-154646.doc of the boundary portion between the light shielding portion 110 and the light transmitting portion 12 can be suppressed. 18 - 201214021 The sensitization of the etch film forms an anti-contact pattern in which the shape of the side wall is sharp (having a sharply rising shape) on the object to be transferred. (b) According to the present embodiment, the difference between the phase shift amount when the exposure light having the representative wavelength is transmitted through the semi-transmissive portion 115 and the phase shift amount when the exposure light is transmitted through the light transmitting portion 12 is less than 60 degrees. It is preferably constructed in a manner that is less than 3 degrees. Thereby, it is possible to suppress the exposure light of the transmissive light transmitting portion 120 from colliding with the exposure light of the transmissive semi-transmissive portion 丄15. As a result, when the resist film formed on the transfer target is irradiated with the exposure light through the multi-mode mask 10, "the unnecessary dark portion is not generated at the boundary portion between the semi-transmissive portion 115 and the light-transmitting portion 12". It is possible to surely sensitize the anti-touch film. (c) According to the present embodiment, the material and thickness of the phase shift adjusting film 1〇2 are adjusted, so that the phase shift amount of the phase shifter unit 111 can be substantially controlled. Further, since the semi-transmissive portion 115 does not have the phase shift adjusting film 1〇2, the transmittance of the semi-transmissive portion 115 does not depend on the material or thickness of the phase shift adjusting film 102. That is, according to the present embodiment, the transmittance of the semi-transmissive portion 115 and the amount of phase shift of the phase shifter portion U1 can be independently controlled. (d) According to the present embodiment, the width of the phase shifter portion ,, that is, the width of the exposed surface of the phase shift adjustment film 102 is 1 〇ηηι or more and 1 〇〇〇 nm or less, preferably 1 〇 nm or more and 500 nm. The following 'better is 5 〇 nm or more and 200 nm or less. Such a width makes it easy to obtain the above effects. (e) According to the present embodiment, in the second etching step, the semi-transmissive film 1〇1 is etched by using the second resist pattern 〇5ρ as a mask, and the side portions of the light-shielding film pattern 102p are etched to form a phase The adjustment film 1〇2?) is partially exposed. Namely, by the side etching, three different patterns of the light-shielding film pattern 1〇3p, the phase shift modulation 154646.doc 19 201214021 integral film pattern 102p, and the semi-transmissive film pattern 101p are formed by the secondary photolithography step. Thereby, the number of photolithography steps in the manufacturing process of the multi-mode mask 1 can be reduced. In other words, according to the embodiment, the semi-transmissive film 1 (H, the phase shift adjustment film 102, and the light shielding film 103 are selected). The material can be patterned by side etching during wet etching. According to the present embodiment, three films can be patterned by secondary etching. To obtain this advantage, for example, a semi-transmissive film 〇1 and The material of the light-shielding film 103 is a material (for example, a Cr-based material) which can be etched by the same etchant, and the phase-shift-adjusting film 1〇2 is made into a material (for example, a MoSi system) which is resistant to the etchant. <Other Embodiments of the Present Invention> Next, another embodiment of the present invention will be described with reference to Figs. 4, 5 and 7. Fig. 4 is a partial cross-sectional view showing the multi-tone mask 2A of the embodiment. Fig. 5 is a flow chart showing the manufacturing steps of the multi-mode mask 2 of the embodiment. Fig. 7 is a partial plan view showing a transfer pattern provided in the multi-mode mask 2 of the embodiment. (1) The configuration of the multi-tone mask is as shown in Fig. 4. In the present embodiment, the portion of the light-shielding portion 11 that is adjacent to the semi-transmissive portion 115 is further exposed to form a phase shift adjustment film 1〇1. The point of the second phase shifter unit 112 is different from that of the above embodiment. The second phase shifter portion 112 formed at the boundary portion between the light shielding portion 110 and the semi-transmissive portion Π5 is configured to shift the phase of the exposure light transmitted through the second phase shifter portion 112 by a specific value. Specifically, the phase shift amount when the exposure light having the representative wavelength in the range of the 丨 line to the g line is transmitted through the second phase shifter portion 112 and the phase shift amount when the exposure light is transmitted through the semi-light transmitting portion 115 are The difference is 9 degrees 154646.doc •20- 201214021 The above is less than 270 degrees, and more preferably it is within the range of i5 degree and above 21 degrees. Thereby, the transmissive semi-transmissive portion 115 cancels the mutual interference by the exposure light that is diffracted toward the second phase shifter portion 112 side and the exposure light that is transmitted through the second phase shifter portion 112. As a result, when the resist film formed on the transfer target is irradiated with the exposure light through the evening mask 10, the resistance to the boundary between the light shielding portion 1 i 〇 and the semi-light transmitting portion 115 can be suppressed. The photosensitive film of the film can form a resist pattern having a sharp side wall shape (having a sharply rising shape) on the object to be transferred. The width of the second phase shifter unit 112 (referred to as W' in FIG. 7) is the same as the phase shifter unit (first phase shifter unit) 111, and is preferably 1 〇〇 nm or more and 1 〇〇 μηι or less. 10 nm or more and 1 〇〇〇 nm or less, and more preferably 5 〇 nm or more and 500 nm or less. Such a width is obtained to easily obtain the above effects. Fig. 7 is a partial plan view showing a transfer pattern provided in the multi-mode mask 2 of the embodiment. According to the present embodiment, a second phase shifter is formed at a boundary portion between the light shielding portion 11A and the semi-light transmitting portion 11 except that the i-th phase shifter portion m is formed at a boundary portion between the light shielding portion u and the light transmitting portion 120. Part 112. According to the present embodiment, the phase shift amount when the exposure light having the representative wavelength in the range of i line to g line is transmitted through the first phase shifter portion 111 and the phase shift amount when the exposure light is transmitted through the light transmitting portion 120 The difference is 120 degrees or more and 240 degrees or less, more preferably 150 degrees or more and 210 degrees or less, whereby the transmission light transmitting portion 120 is diffracted to the phase shifter portion 1 to enter the exposure light and transmission. The exposure light of the phase shifter portion 111 cancels each other out. Thereby, the transmissive semi-transmissive portion 115 interferes with the exposure light that is diffracted toward the second phase shifter portion 112 side and the exposure light that is transmitted through the second phase shifter portion 112, and transmits through the 154646.doc. • 21·201214021 The light portion 120 is offset by the exposure light entering the second phase shifter unit 111 by the diffraction and the exposure light transmitted through the first phase shifter unit 111. As a result, when the resist film formed on the transfer target is irradiated with the exposure light via the multi-mode mask 2, the resist film that opposes the boundary portion between the light-shielding portion 11A and the light-transmitting portion 12 can be suppressed. The light-receiving pattern is formed on the boundary between the light-shielding portion 11 〇 and the semi-transmissive portion 115, and a resist pattern having a sharp sidewall shape (having a sharply rising shape) at each boundary is formed. On the body to be transferred. Further, the difference between the phase shift amount when the exposure light is transmitted through the semi-transmissive portion 115 and the phase shift amount when the exposure light is transmitted through the light transmitting portion 120 is -6 degrees or more and 6 degrees or less, more preferably - It is composed of 30 degrees or more and 30 degrees or less. Thereby, it is possible to suppress the exposure light of the transmissive light transmitting portion 120 from colliding with the light for the exposure of the transmissive light transmitting portion ι15. As a result, when the anti-scratch film formed on the object to be transferred is irradiated with the exposure light via the multi-mode mask 10, unnecessary dark portions are not generated at the boundary portion between the semi-transmissive portion 115 and the light transmitting portion 120. Further, the resist film is sure to be made light. Further, as shown in Fig. 8, the phase shifter portion may be provided only at the boundary portion between the light shielding portion 110 and the semi-light transmitting portion 115. In this way, it is possible to suppress the light repellency of the resist film facing the boundary portion between the light shielding portion 1 i 〇 and the semi-light transmitting portion 115, and the resist pattern having a sharp side wall shape (having a sharply rising shape) can be formed on the boundary portion. (2) Manufacturing method of multi-tone mask The manufacturing method of the multi-mode mask 20 having such a configuration will be described with reference to Fig. 5 . (Blank mask preparation step) 154646.doc -22- 201214021 First, as illustrated in FIG. 5(a), a semi-transmissive film 101, a phase shift adjustment film 102, and a light shielding film are sequentially formed on the transparent substrate 1A. 1〇3, a blank mask i〇b of the first anti-segment film 104 is formed on the uppermost layer. The material, the thickness, and the like of each member are selected in the same manner as in the above embodiment, so that the optical characteristics and the like of the respective members satisfy the above conditions. (First resist pattern forming step) Next, the blank mask 10b is exposed and developed in the same manner as in the above embodiment, and the i-th resist pattern 104p covering the predetermined region where the light-shielding portion 110 is formed is formed. (First Step of Inscription) Next, the formed first resist pattern 1041 is used as a mask, and the light-shielding film 103 is etched in the same manner as in the above embodiment to form a light-shielding film pattern 〇3p. At this time, the phase shift adjustment film 1〇2 of the substrate functions as an etching stopper. A state in which the light shielding film pattern 1031) is formed is exemplified in FIG. 5(b). (Second Resist Film Forming Step) Next, after the first anti-pattern 1 〇 4p is removed, the entire surface of the blank mask 1 〇 b having the light-shielding film pattern 1 〇 3 Ρ and the exposed phase shift adjusting film 102 is formed. 2 resist film 105. The first! The same method as in the above embodiment can be used for the removal of the resist pattern (7) and the formation of the second resist film 1〇5. (Second Resist Pattern Forming Step) Next, the second resist film 1〇5 is exposed and developed in the same manner as in the above-described embodiment, and is formed in a predetermined region where the light shielding portion 11 is covered, and is located in the light shielding portion 110. a predetermined region for forming the first phase shifter portion lu at the boundary portion of the light transmitting portion 120 and a second phase shifter portion 112 located at a boundary portion between the light shielding portion 110 and the semi-light transmitting portion 115 154646.doc • 23·201214021 The second resist pattern 100b is formed in a predetermined region. A state in which the second resist pattern 10b is formed is exemplified in FIG. 5(c). (Second etching step) Next, the formed second resist pattern 10p is used as a mask, and the phase shift adjusting film 102 is etched in the same manner as in the above embodiment to form the phase shift adjusting film pattern 102p, and a half is formed. The light transmitting portion 115 and the first phase shifter portion 11A and the second phase shifter portion 112. A state in which the second etching step is performed is exemplified in Fig. 5(d). (3rd resist film forming step) Then, after removing the second resist pattern 10p, the blank mask 1 having the light shielding film pattern 103p, the phase shift adjusting film pattern 1 〇 2p, and the exposed semi-transmissive film ιοί The entire third layer of the resist film 106 is formed on 〇b. The removal of the second resist pattern ι 5p and the formation of the third resist film 106 can be carried out in the same manner as in the above embodiment. (3rd resist pattern forming step) Next, the third resist film 1〇6 is exposed and developed in the same manner as in the above-described embodiment to form the third region covering the region other than the predetermined region where the light transmitting portion 120 is formed. Anti-touch pattern l〇6p. In addition, a region other than the predetermined region in which the light-transmitting portion 12 is formed is a predetermined region in which the light-shielding portion 110 is formed, a predetermined region in which the first phase shifter portion 111 is formed, and a predetermined region in which the second phase shifter portion is formed. And the semi-transmissive portion 115 forms a predetermined region. A state in which the third resist pattern 10?6p is formed is exemplified in Fig. 5(e). (Third etching step) Next, the third resist pattern 1 〇 6p is formed as a mask, and the semi-transmissive film 101 is etched in the same manner as in the above-described embodiment of 154646.doc -24·201214021 to form a semi-transparent film. The light film pattern ΐοίρ 'and the transparent substrate 100 is partially exposed to form a light transmitting portion 1〇〇. A state in which the third silver etching step is performed is illustrated in Fig. 5(f). (3rd resist pattern removing step) Next, the third resist pattern l〇6p ' is removed in the same manner as in the above embodiment to terminate the manufacture of the multi-mode mask 2 of the present embodiment. The third method of removing the third anti-surname pattern 106P can be carried out in the same manner as in the above embodiment. A state in which the third resist pattern is removed is exemplified in Fig. 5(g). The multi-mode mask 20 of the present embodiment also has the same effect as the multi-mode mask 10 of the above embodiment. According to the present embodiment, the phase shift amount when the exposure light having the representative wavelength in the range of i line to g line is transmitted through the second phase shifter portion Π2 and the light for the exposure light transmitted through the semi-light transmitting portion 115 are The difference in phase shift amount is formed within a range of 9 degrees or more and 27 degrees or less, more preferably 150 degrees or more and 210 degrees or less. As a result, the transmissive semi-transmissive portion 115 cancels the mutual interference by the exposure light that is diffracted toward the second phase shifter portion 112 side and the exposure light that is transmitted through the second phase shifter portion 112. As a result, when the resist film formed on the transfer target is irradiated with the exposure light through the multi-mode mask, the susceptibility of the anti-# film to the boundary portion between the light-shielding portion U 〇 and the semi-light-transmitting portion ι 5 can be suppressed. A resist pattern having a sharp side wall shape (having a shape in which the fish is raised) can be formed on the object to be transferred. <Other Embodiments of the Invention> Further, another embodiment of the present invention will be described with reference to Fig. 9 . 9 is a partial cross-sectional view showing the multi-mode mask of the embodiment, an amplitude intensity curve of the exposure light transmitted through the mask, and a partial curve of the light intensity, and forming a 154646.doc •25·201214021 on the object to be transferred. A cross-sectional view of the resist pattern is shown for each relationship. In the photomask of the present invention having the phase shifter portion 112 at the interface between the light shielding portion 110 and the semi-light transmitting portion 115, 'the transmission phase shifter portion 12 is indicated by the broken line, and the exposure with respect to the transmissive semi-light transmitting portion 115 is indicated by a broken line. The phase difference between the light used is the amplitude intensity of the exposure light within 270 degrees or more and the amplitude of the exposure light transmitted through the semi-transmissive portion U5& Further, the light for the exposure is synthesized as a light intensity by a solid line. The part (A) of the light intensity curve indicates the portion of the light intensity curve which is reduced by the exposure light of the transmission phase shifter portion 1 丨 2 and the exposure light of the transmission semi-transmissive portion due to the interference (B) The 'portion' indicates the exposure light transmitted through the phase shifter portion 112. If the width of the phase shifter exceeds 1 〇〇〇 nm, the decrease in transmittance due to the influence of the diffraction caused by the line width below is less likely to occur, and the exposure light of the transmission phase shifter portion (B) In the case where part of the light intensity is increased (above the threshold value in the figure), the anti-contact agent is sensitive to the silver agent to give an unnecessary change in film thickness. Therefore, in order to prevent this influence, the transmittance of the phase shifter portion is preferably as low as possible within the intensity range in which the exposure light has a phase shift effect. Further, if the light is not transmitted completely, the effect of the present invention does not occur. Therefore, for example, the transmittance of the phase shifter portion 11 2 can be 5% or more and 20% or less. More preferably 5°/. Above 10%. Thus, even in the phase shifter portion having a width exceeding 1000 nm, the region (B) of the resist which is photosensitive by the exposure light of the transmissive phase shifter portion and the region of the resist substantially corresponding to the light shielding portion are There will be no deviation in thickness between them. Therefore, the phase shifter portion of the present invention is at the boundary between the light shielding portion and the semi-light transmitting portion, or the boundary between the light shielding portion and the light transmitting portion, and is patterned by using the photomask of the present invention. 154646.doc •26·201214021='and shading When the portion has substantially (4) shielding, the phase shifter portion can be made equal to the light shielding portion. When the width of the phase shifter portion is increased, it is necessary to reduce the width of the other portion of the light shielding portion. Considering the ease of pattern design or the ease of the process, it can be less than 1Gnm or less. Therefore, since the photomask of the invention of the first aspect has the same shielding as the light shielding portion, the phase shifter portion can be used as a light-shielding pattern to design a mask pattern. Further, the phase shifter portion provided at the boundary between the light shielding portion and the light transmitting portion may be shielded from light. P is processed in the same manner as the phase shifter portion provided at the boundary between the semi-transmissive portion. In this case, for example, the transmittance of the phase shifter portion is preferably 5% or more and 20% or less. More preferably, the transmittance is 5% or more and 1% by weight or less. The embodiments of the present invention have been described in detail above, but the present invention is not limited to the embodiments described above, and various modifications can be made without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partial cross-sectional view showing a multi-mode mask according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing a pattern transfer method using a multi-tone mask according to an embodiment of the present invention. Figures 3(a)-(g) are flow charts showing the steps of manufacturing a multi-mode mask according to an embodiment of the present invention. Fig. 4 is a partial cross-sectional view of a multi-mode mask according to another embodiment of the present invention 154646.doc • 27· 201214021. Figures 5(a)-(g) are flow diagrams showing the steps of a multi-tone mask manufacturing process in accordance with another embodiment of the present invention. Fig. 6 is a partial plan view showing a pattern of a multi-tone mask of the embodiment of the present invention. Eight Transfers Fig. 7 is a partial plan view showing a pattern for printing of a multi-tone mask according to another embodiment of the present invention. Fig. 8 is a partial plan view showing a pattern for transfer provided in a multi-mode mask according to another embodiment of the present invention. Fig. 9 is a cross-sectional view showing a pattern transfer method using a multi-tone mask of another embodiment of the present invention. ° [Main component symbol description] 10 Multi-mode mask 20 Multi-mode mask 100 Transparent substrate 101 Semi-transmissive film 102 Phase shift adjustment film 103 Light-shielding film 110 Light-shielding part 111 Phase shifter part (first phase shifter part) 112 Second phase shifter portion 115 semi-transmissive portion 120 light transmitting portion 154646.doc -28-