TWI417671B - Half tone mask, method for fabricating the same, and flat panel display using the same - Google Patents
Half tone mask, method for fabricating the same, and flat panel display using the same Download PDFInfo
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本發明係關於一種具有一透明基板、一半透光層及一遮光層之半色調光罩，一種製造該半色調光罩之方法，及一種採用該半色調光罩之平面顯示器。 The present invention relates to a halftone mask having a transparent substrate, a semi-transmissive layer and a light shielding layer, a method of fabricating the halftone mask, and a flat panel display using the halftone mask.
如圖1中所示，一通常用於採用微影蝕刻之圖案化製程的光罩，其包括一透明基板11、在該透明基板11上形成之用於完全透射光之透光部分13，及在該透明基板11上形成之用於完全遮蔽光之遮光部分15。 As shown in FIG. 1, a photomask generally used for a patterning process using photolithography includes a transparent substrate 11, a light transmissive portion 13 formed on the transparent substrate 11 for completely transmitting light, and A light shielding portion 15 for completely shielding light is formed on the transparent substrate 11.
上述傳統光罩僅形成一個圖案層，因此僅被用於微影蝕刻製程(包括曝光、顯影及蝕刻)之一個週期。更具體而言，在一液晶顯示器之一薄膜電晶體及一彩色濾光片中，有許多沈積/應用層，且該等沈積/應用層係藉由微影蝕刻製程分別圖案化。該微影蝕刻製程僅一個週期之縮減可導致經濟上之優勢。然而，傳統光罩僅形成一個圖案層，因此係不經濟的。 The conventional photomask described above forms only one pattern layer and is therefore only used for one cycle of the photolithography process (including exposure, development, and etching). More specifically, in a thin film transistor and a color filter of a liquid crystal display, there are a plurality of deposition/application layers, and the deposition/application layers are separately patterned by a photolithography process. The reduction of the lithography process in only one cycle can result in an economic advantage. However, the conventional photomask forms only one pattern layer and is therefore uneconomical.
為解決上述問題，已經開發了一種灰色調光罩，其包括完全透射光之透光部分、一完全遮蔽光之遮光層，及一透射減量之照射光的狹縫圖案。但是，該灰色調光罩採用透過一精細圖案的光之繞射來控制透光量，因此由於該狹縫圖案之限制，對於透光量存在一限制。此外，當該灰色調光罩之尺寸大於一指定 值時，將不可能實現均勻之圖案化。 In order to solve the above problems, a gray dimming cover has been developed which includes a light transmitting portion that completely transmits light, a light shielding layer that completely blocks light, and a slit pattern that transmits a reduced amount of illumination light. However, the gray dimming cover controls the amount of light transmission by diffracting light passing through a fine pattern, and therefore there is a limit to the amount of light transmitted due to the limitation of the slit pattern. In addition, when the size of the gray dimmer is larger than a specified At the time of the value, it is impossible to achieve uniform patterning.
因此，考慮到上述問題而提出本發明，且本發明之一目的係提供一種半色調光罩，其應用於一微影蝕刻製程的多個週期且實現均勻之圖案化而不受該光罩尺寸的限制，並提供一種製造該半色調光罩之方法，及一種採用該半色調光罩之平面顯示器。 Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to provide a halftone mask which is applied to a plurality of cycles of a lithography process and achieves uniform patterning without being affected by the size of the mask. And a method of manufacturing the halftone mask, and a flat panel display using the halftone mask.
根據本發明之一方面，藉由提供一半色調光罩可以完成該等上述及其他目的，該半色調光罩包括一透明基板；一形成於該透明基板上之遮光層，且其具有完全透射一指定波長範圍內之照射光的透光部分，及完全遮蔽該指定波長範圍內之照射光的遮光部分；及部分透射該指定波長範圍內之照射光的半透光部分。 According to one aspect of the invention, the above and other objects are achieved by providing a halftone mask comprising a transparent substrate; a light shielding layer formed on the transparent substrate, and having a complete transmission a light-transmitting portion of the illuminating light in a specified wavelength range, and a light-shielding portion that completely shields the illuminating light in the specified wavelength range; and a semi-transmissive portion that partially transmits the illuminating light in the specified wavelength range.
根據本發明之另一方面，提供一種採用該半色調光罩製造之平面顯示器。 According to another aspect of the present invention, a flat panel display fabricated using the halftone mask is provided.
根據本發明之另一方面，提供一種製造一半色調光罩之方法，其包括在一透明基板上依序地形成一遮光層及一第一光阻，且藉由曝光、顯影及蝕刻在該遮光層上形成用於透射光之透光部分及用於遮蔽光之遮光部分；移除該第一光阻；在該等遮光部分及該等透光部分上形成一第二光阻，且曝光及顯影該第二光阻，從而將該等透光部分之必要部分曝露於外界；在該 第二光阻及該透明基板之曝露部分上，形成一用於部分透射一指定波長範圍內之照射光的半透光層；及移除該第二光阻和形成於該第二光阻上之該半透光層。 According to another aspect of the present invention, a method of fabricating a halftone mask includes sequentially forming a light shielding layer and a first photoresist on a transparent substrate, and the light is blocked by exposure, development, and etching. Forming a light-transmitting portion for transmitting light and a light-shielding portion for shielding light; removing the first photoresist; forming a second photoresist on the light-shielding portions and the light-transmitting portions, and exposing and Developing the second photoresist to expose necessary portions of the light transmitting portions to the outside; Forming, on the exposed portion of the second photoresist and the transparent substrate, a semi-transmissive layer for partially transmitting the illumination light in a specified wavelength range; and removing the second photoresist and forming the second photoresist The semi-transmissive layer.
根據本發明之另一方面，提供一種製造一半色調光罩之方法，其包括在一透明基板上依序地形成一遮光層及一第一光阻，且藉由曝光、顯影及蝕刻在該遮光層上形成用於透射光之透光部分及用於遮蔽光之遮光部分；移除該第一光阻；在該等遮光部分及該等透光部分上形成一用於部分透射一指定波長範圍內之照射光的半透光層；在該半透光層上形成一第二光阻，且曝光及顯影該第二光阻，從而將該半透光層之必要部分曝露於外界；蝕刻該半透光層之該等曝露部分，且移除該第二光阻。 According to another aspect of the present invention, a method of fabricating a halftone mask includes sequentially forming a light shielding layer and a first photoresist on a transparent substrate, and the light is blocked by exposure, development, and etching. Forming a light-transmitting portion for transmitting light and a light-shielding portion for shielding light; removing the first photoresist; forming a portion for transmitting a specified wavelength range on the light-shielding portion and the light-transmitting portions a semi-transmissive layer for illuminating light; forming a second photoresist on the semi-transmissive layer, and exposing and developing the second photoresist to expose a necessary portion of the semi-transmissive layer to the outside; etching the The exposed portions of the semi-transmissive layer and the second photoresist are removed.
根據本發明之又一方面，提供一種製造一半色調光罩之方法，其包括在一透明基板上依序地形成一遮光層及一第一光阻，且藉由曝光、顯影及蝕刻在該遮光層上形成用於透射光之透光部分及用於遮蔽光之遮光部分；在該第一光阻及該等透光部分上形成一用於部分透射一指定波長範圍內之照射光的半透光層；藉由移除該第一光阻及該半透光層之形成於該第一光阻上的部分，曝露該等遮光部分；在該等遮光部分及該半透光層之保留部分上形成一第二光阻，且曝光及顯影該第二光阻，從而將該半透光層之必要部分曝露於外界；及蝕刻該半透光層 之該等曝露部分，且移除該第二光阻。 According to still another aspect of the present invention, a method for fabricating a halftone mask includes sequentially forming a light shielding layer and a first photoresist on a transparent substrate, and the light is blocked by exposure, development, and etching. a light transmissive portion for transmitting light and a light shielding portion for shielding light are formed on the layer; and a semitransparent portion for partially transmitting the illumination light in a specified wavelength range is formed on the first light resist and the light transmissive portions The light-receiving portion is exposed by removing the first photoresist and the portion of the semi-transmissive layer formed on the first photoresist; and the light-shielding portion and the remaining portion of the semi-transmissive layer are exposed Forming a second photoresist thereon, exposing and developing the second photoresist, thereby exposing a necessary portion of the semi-transmissive layer to the outside; and etching the semi-transmissive layer The portions are exposed and the second photoresist is removed.
現在，將參考該等隨附圖式詳細描述本發明之較佳實施例。 Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
圖2係根據本發明之一實施例的一半色調光罩100之剖視圖；如圖2中所示，根據本發明之該實施例之半色調光罩100包括一透明基板110、一遮光層120，及半透光部分130。 2 is a cross-sectional view of a halftone mask 100 according to an embodiment of the present invention; as shown in FIG. 2, the halftone mask 100 according to the embodiment of the present invention includes a transparent substrate 110 and a light shielding layer 120. And a semi-transmissive portion 130.
完全透射一指定波長範圍內之照射光的透明基板110，係由石英製成。遮光層120係由鉻(Cr)或二氧化鉻(CrO2)製成，且其在透明基板110上以一指定圖案形成。在透明基板110之一部分上形成遮光層120的圖案，該部分用作透光部分121，在透明基板110之一部分上未形成遮光層120的圖案，該部分用作遮光部分125。在透光部分121之必要部分上形成之半透光部分130，係藉由向透明基板110施加氧化鉻(CrxOy)膜獲得，因此其部分透射該指定波長範圍內之光。 The transparent substrate 110 that completely transmits the illumination light in a specified wavelength range is made of quartz. The light shielding layer 120 is made of chromium (Cr) or chromium dioxide (CrO 2 ), and is formed on the transparent substrate 110 in a prescribed pattern. A pattern of the light shielding layer 120 is formed on a portion of the transparent substrate 110, which serves as the light transmitting portion 121, and a pattern of the light shielding layer 120 is not formed on a portion of the transparent substrate 110, which portion serves as the light shielding portion 125. The semi-transmissive portion 130 formed on a necessary portion of the light transmitting portion 121 is obtained by applying a chromium oxide (Cr x O y ) film to the transparent substrate 110, and thus partially transmits light in the specified wavelength range.
半透光部分130可以由各種化合物製成，只要該等合成物能夠部分透射一指定波長範圍內之照射光即可。在本發明中，製成半透光部分130之化合物係選自由CrxOy、CrxCoy、CrxCoyNz、SixNy，及MoxSiy組成之群。最佳地，半透光部分130係由CrxOy製成。在此，下標x、y及z係自然數且指示各化學元素之數目。 The semi-transmissive portion 130 can be made of various compounds as long as the compositions are capable of partially transmitting the illumination light within a specified wavelength range. In the present invention, the compound which is formed into the semi-transmissive portion 130 is selected from the group consisting of Cr x O y , Cr x Co y , Cr x Co y N z , Si x N y , and Mo x Si y . Most preferably, the semi-transmissive portion 130 is made of Cr x O y . Here, the subscripts x, y, and z are natural numbers and indicate the number of each chemical element.
照射光之波長範圍根據曝光系統不同而變化，因此其不受限制。通常，採用一波長範圍為300奈米~440奈米之光。半透光部分130係足夠用於部分透射該照射光，且藉由該半透光部分130之透光量並不受限制。較佳地，半透光部分130透射該照射光之10%~90%。 The wavelength range of the illumination light varies depending on the exposure system, and thus it is not limited. Typically, a range of wavelengths from 300 nm to 440 nm is used. The semi-transmissive portion 130 is sufficient for partially transmitting the illumination light, and the amount of light transmitted by the semi-transmissive portion 130 is not limited. Preferably, the semi-transmissive portion 130 transmits 10% to 90% of the illumination light.
如圖3a中所示，半透光部分130可以不與該等遮光部分125接觸，且如圖3b中所示，其可以與該等遮光部分125之每一部分之一側面接觸。 As shown in FIG. 3a, the semi-transmissive portion 130 may not be in contact with the light-shielding portions 125, and as shown in FIG. 3b, it may be in side contact with one of each of the portions of the light-shielding portions 125.
下文中，參考圖4a及4b，將描述一根據本發明之上述實施例製造該半色調光罩100之製程。圖4a及4b係根據本發明之該第一實施例，說明製造該半色調光罩100之製程的剖視圖。 Hereinafter, referring to Figures 4a and 4b, a process for fabricating the halftone mask 100 in accordance with the above embodiment of the present invention will be described. 4a and 4b are cross-sectional views showing the process of fabricating the halftone mask 100 in accordance with the first embodiment of the present invention.
如圖4a及4b中所示，在步驟S10中，在由石英製成之透明基板110上，依序地形成由Cr或CrO2製成之遮光層120及一正型(positive-type)第一光阻141，且一雷射光束向下照射至該第一光阻141，藉此透過該第一光阻141繪製一需要圖案。較佳地，在遮光層120之拐角處形成校準標記。 As shown in FIGS. 4a and 4b, in step S10, a light-shielding layer 120 made of Cr or CrO 2 and a positive-type first are formed on the transparent substrate 110 made of quartz. A photoresist 141, and a laser beam is irradiated downward to the first photoresist 141, thereby drawing a desired pattern through the first photoresist 141. Preferably, a calibration mark is formed at the corner of the light shielding layer 120.
在步驟S20中，藉由顯影，將第一光阻141之雷射光束照射之部分移除。在步驟S30中，藉由蝕刻將遮光層120之因移除該第一光阻141而被曝露至外界之部分移除。 In step S20, the portion irradiated by the laser beam of the first photoresist 141 is removed by development. In step S30, the portion of the light shielding layer 120 that is exposed to the outside by removing the first photoresist 141 by etching is removed.
在步驟S40中，將第一光阻141完全移除。然後，透明基板110之自其移除遮光層120之部分，用作完全透射一指定波長 範圍內之光的透光部分121，透明基板110之其上保留遮光層120之部分，用作完全遮蔽光之遮光部分125。換言之，藉由遮光層120之微影蝕刻製程，形成用於透射光之透光部分121及用於遮蔽光之遮光部分125。 In step S40, the first photoresist 141 is completely removed. Then, a portion of the transparent substrate 110 from which the light shielding layer 120 is removed serves to completely transmit a specified wavelength. The light transmitting portion 121 of the light in the range, the portion of the transparent substrate 110 on which the light shielding layer 120 is left, serves as a light shielding portion 125 for completely shielding light. In other words, the light transmitting portion 121 for transmitting light and the light blocking portion 125 for shielding light are formed by the lithography etching process of the light shielding layer 120.
其後，形成用於部分透射一指定波長範圍內之照射光的半透光部分130。現在，將詳細描述半透光部分130之形成。 Thereafter, a semi-transmissive portion 130 for partially transmitting the illumination light in a specified wavelength range is formed. Now, the formation of the semi-light transmitting portion 130 will be described in detail.
在步驟S50中，在透光部分121及遮光部分125上塗佈上一正型第二光阻145。在步驟S60中，一雷射光束照射至第二光阻145上，從而該第二光阻145曝露於該雷射光束下，藉此繪製一透過該第二光阻145形成之對應於待形成之半透光部分130之需要圖案。在步驟S70中，藉由顯影將第二光阻145之該雷射光束照射之部分移除。藉此，透明基板110之部分被曝露至外界。半透光部分130係形成於透明基板110之該等曝露部分上。 In step S50, a positive-type second photoresist 145 is applied on the light-transmitting portion 121 and the light-shielding portion 125. In step S60, a laser beam is irradiated onto the second photoresist 145, so that the second photoresist 145 is exposed to the laser beam, thereby forming a corresponding passage formed by the second photoresist 145 to be formed. The desired pattern of the semi-transmissive portion 130. In step S70, the portion of the second photoresist 145 that is irradiated with the laser beam is removed by development. Thereby, a portion of the transparent substrate 110 is exposed to the outside. The semi-transmissive portion 130 is formed on the exposed portions of the transparent substrate 110.
為了採用該雷射光束在對應於半透光部分130所塗佈之第二光阻145上正確繪製一圖案，較佳地，在該第二光阻145之曝光及顯影之前，執行一步驟，即採用形成於遮光層120之拐角處的校準標記來校正照射至該第二光阻145上之雷射光束的照射位置。 In order to correctly draw a pattern on the second photoresist 145 corresponding to the semi-transmissive portion 130 by using the laser beam, preferably, a step is performed before the exposure and development of the second photoresist 145. That is, the alignment mark formed on the corner of the light shielding layer 120 is used to correct the irradiation position of the laser beam irradiated onto the second photoresist 145.
其後，在步驟S80中，藉由濺射，在第二光阻145及透明基板110之該等曝露部分上塗佈上一由一種化合物製成之半透 光層160，將其塗佈至一指定厚度，該半透光層160部分透射一指定波長範圍內之照射光。在步驟S90中，將第二光阻145移除。然後，在移除第二光阻145時，同時地移除在第二光阻145上之由部分透射照射光的化合物製成之半透光層150。 Thereafter, in step S80, the second photoresist 145 and the exposed portions of the transparent substrate 110 are coated with a semi-transparent film made of a compound by sputtering. The light layer 160 is applied to a specified thickness, and the semi-transmissive layer 160 partially transmits the illumination light in a specified wavelength range. In step S90, the second photoresist 145 is removed. Then, when the second photoresist 145 is removed, the semi-transmissive layer 150 made of the compound that partially transmits the illumination light on the second photoresist 145 is simultaneously removed.
然後，僅在遮光層120之透光部分121之必要部分上塗佈了由化合物製成之半透光層160，藉此形成部分透射該指定波長範圍內之照射光的半透光部分130。藉由半透光層160之化合物的成分及厚度可以視需要控制半透光部分130之透光率，且根據待形成之圖案的形狀，變化地修正半透光部分130之形狀。 Then, the semi-transmissive layer 160 made of a compound is coated only on a necessary portion of the light-transmitting portion 121 of the light-shielding layer 120, thereby forming a semi-transmissive portion 130 partially transmitting the illumination light in the specified wavelength range. The light transmittance of the semi-transmissive portion 130 can be controlled by the composition and thickness of the compound of the semi-transmissive layer 160, and the shape of the semi-transmissive portion 130 can be variably corrected according to the shape of the pattern to be formed.
半透光部分130可以由各種化合物製成，只要該等合成物能夠部分透射一指定波長範圍內之照射光即可。在本發明中，製成半透光部分130之化合物係選自由CrxOy、CrxCoy、CrxCoyNz、SixNy，及MoxSiy組成之群。最佳地，半透光部分130係由CrxOy製成。在此，下標x、y及z係自然數且指示各化學元素之數目。 The semi-transmissive portion 130 can be made of various compounds as long as the compositions are capable of partially transmitting the illumination light within a specified wavelength range. In the present invention, the compound which is formed into the semi-transmissive portion 130 is selected from the group consisting of Cr x O y , Cr x Co y , Cr x Co y N z , Si x N y , and Mo x Si y . Most preferably, the semi-transmissive portion 130 is made of Cr x O y . Here, the subscripts x, y, and z are natural numbers and indicate the number of each chemical element.
照射光之波長範圍根據曝光系統不同而變化，因此其不受限制。通常，採用一波長範圍為300奈米~440奈米之光。半透光部分130係足夠用於部分透射該照射光，且藉由該半透光部分130之透光量並不受限制。較佳地，半透光部分130透射該照射光之10%~90%。 The wavelength range of the illumination light varies depending on the exposure system, and thus it is not limited. Typically, a range of wavelengths from 300 nm to 440 nm is used. The semi-transmissive portion 130 is sufficient for partially transmitting the illumination light, and the amount of light transmitted by the semi-transmissive portion 130 is not limited. Preferably, the semi-transmissive portion 130 transmits 10% to 90% of the illumination light.
在下文中，參考圖5a及5b，將描述根據本發明之一第二實施例之製造一半色調光罩100之製程。圖5a及5b係根據本發明之該第二實施例說明製造該半色調光罩100之製程的剖視圖。 Hereinafter, referring to Figures 5a and 5b, a process for manufacturing the halftone mask 100 according to a second embodiment of the present invention will be described. 5a and 5b are cross-sectional views showing a process of fabricating the halftone mask 100 in accordance with the second embodiment of the present invention.
如圖5a及5b中所示，在步驟S10中，由Cr或CrO2製成之遮光層120及正型第一光阻141係依序地形成於由石英製成之透明基板110上，且一雷射光束照射至該第一光阻141上，藉此透過該第一光阻141繪製一需要圖案。較佳地，在遮光層120之拐角處形成校準標記。 As shown in FIGS. 5a and 5b, in step S10, the light shielding layer 120 made of Cr or CrO 2 and the positive first photoresist 141 are sequentially formed on the transparent substrate 110 made of quartz, and A laser beam is incident on the first photoresist 141, thereby drawing a desired pattern through the first photoresist 141. Preferably, a calibration mark is formed at the corner of the light shielding layer 120.
在步驟S20中，藉由顯影，將第一光阻141之該雷射光束照射之部分移除。在步驟S30中，藉由蝕刻將遮光層120之因移除該第一光阻141而被曝露至外界之部分移除。 In step S20, the portion of the first photoresist 141 that is irradiated with the laser beam is removed by development. In step S30, the portion of the light shielding layer 120 that is exposed to the outside by removing the first photoresist 141 by etching is removed.
在步驟S40中，將第一光阻141完全移除。然後，透明基板110之自其移除遮光層120之部分，用作完全透射一指定波長範圍內之光的透光部分121，及透明基板110之其上保留遮光層120之部分，用作完全遮蔽光之遮光部分125。換言之，藉由遮光層120之微影蝕刻製程，形成用於透射光之透光部分121及用於遮蔽光之遮光部分125。 In step S40, the first photoresist 141 is completely removed. Then, a portion of the transparent substrate 110 from which the light shielding layer 120 is removed serves as a light transmitting portion 121 that completely transmits light in a specified wavelength range, and a portion of the transparent substrate 110 on which the light shielding layer 120 remains, used as a complete The light blocking portion 125 of the light is shielded. In other words, the light transmitting portion 121 for transmitting light and the light blocking portion 125 for shielding light are formed by the lithography etching process of the light shielding layer 120.
其後，形成用於部分透射一指定波長範圍內之照射光的半透光部分130。現在，將詳細描述半透光部分130之形成。 Thereafter, a semi-transmissive portion 130 for partially transmitting the illumination light in a specified wavelength range is formed. Now, the formation of the semi-light transmitting portion 130 will be described in detail.
在步驟S50中，在透光部分121及遮光部分125上形成用於 部分透射一指定波長範圍內之光的半透光層160。藉由濺射在透光部分121及遮光部分125上塗佈半透光層160。半透光層160係由一部分透射該指定波長範圍內之照射光的化合物製成。在該第二實施例中之半透光層160的上述形成與第一實施例中之半透光層160的形成之區別在於，第一實施例之半透光層160係形成於光阻及透明基板110上。 In step S50, a formation is formed on the light transmitting portion 121 and the light shielding portion 125. A semi-transmissive layer 160 that partially transmits light in a specified wavelength range. The semi-transmissive layer 160 is coated on the light transmitting portion 121 and the light shielding portion 125 by sputtering. The semi-transmissive layer 160 is made of a portion of a compound that transmits illumination light in the specified wavelength range. The above-described formation of the semi-transmissive layer 160 in the second embodiment is different from the formation of the semi-transmissive layer 160 in the first embodiment in that the semi-transmissive layer 160 of the first embodiment is formed on the photoresist and On the transparent substrate 110.
在形成半透光層160之後，將正型第二光阻145塗佈至該半透光層160上(參考步驟S60)。在步驟S60中，一雷射光束照射至第二光阻145上，藉此透過該第二光阻145繪製一需要圖案，從而將半透光層160之必要部分曝露至外界。在步驟S70中，藉由顯影將第二光阻145之該雷射光束照射至其上之部分移除。 After the semi-transmissive layer 160 is formed, a positive type second photoresist 145 is applied onto the semi-transmissive layer 160 (refer to step S60). In step S60, a laser beam is irradiated onto the second photoresist 145, thereby drawing a desired pattern through the second photoresist 145, thereby exposing a necessary portion of the semi-transmissive layer 160 to the outside. In step S70, the portion of the second photoresist 145 to which the laser beam is irradiated is removed by development.
在塗佈第二光阻145之後，為了採用該雷射光束在所塗佈之第二光阻145上正確繪製一圖案，較佳地，在第二光阻145之曝光及顯影之前，執行一步驟，即採用形成於遮光層120之拐角處之校準標記來校正照射至該第二光阻145上之雷射光束的照射位置。 After the second photoresist 145 is applied, in order to correctly draw a pattern on the applied second photoresist 145 by using the laser beam, preferably, before the exposure and development of the second photoresist 145, a The step of correcting the irradiation position of the laser beam irradiated onto the second photoresist 145 is performed by using a calibration mark formed at a corner of the light shielding layer 120.
其後，在步驟S80中，藉由濕蝕刻將半透光層160之該等曝露部分移除，從而將透明基板110之指定部分曝露至外界。在步驟S90中，將在半透光層160上保留之第二光阻145移除。然後，半透光層160保留在遮光部分125及透明基板110之部 分上，且半透光層160之保留在部分透明基板110上之部分，係對應於半透光部分130。 Thereafter, in step S80, the exposed portions of the semi-transmissive layer 160 are removed by wet etching, thereby exposing a designated portion of the transparent substrate 110 to the outside. In step S90, the second photoresist 145 remaining on the semi-transmissive layer 160 is removed. Then, the semi-transmissive layer 160 remains in the portion of the light shielding portion 125 and the transparent substrate 110. The portion of the semi-transmissive layer 160 remaining on the portion of the transparent substrate 110 corresponds to the semi-transmissive portion 130.
即是，將一種部分透射一指定波長範圍內之透射光的化合物塗佈至遮光層120之透光部分121的必要部分上，藉此形成用於部分透射該指定波長範圍內之透射光的半透光部分130。藉由化合物的成分及厚度可以根據需要而控制半透光部分130之透光率，且根據待形成之圖案的形狀，變化地修正半透光部分130之形狀。 That is, a compound partially transmitting light transmitted through a specified wavelength range is applied to a necessary portion of the light transmitting portion 121 of the light shielding layer 120, thereby forming a half for partially transmitting the transmitted light in the specified wavelength range. Light transmitting portion 130. The light transmittance of the semi-transmissive portion 130 can be controlled as needed by the composition and thickness of the compound, and the shape of the semi-transmissive portion 130 can be variably corrected according to the shape of the pattern to be formed.
半透光部分130或半透光層160可由各種化合物製成，只要該等合成物能夠部分透射一指定波長範圍內之照射光即可。在本發明中，製成半透光部分130之化合物係選自由CrxOy、CrxCoy、CrxCoyNz、SixNy、及MoxSiy組成之群。最佳地，半透光部分130係由CrxOy製成。在此，下標x、y及z係自然數且指示各化學元素之數目。 The semi-transmissive portion 130 or the semi-transmissive layer 160 may be made of various compounds as long as the compositions are capable of partially transmitting the illumination light within a specified wavelength range. In the present invention, the compound which is formed into the semi-transmissive portion 130 is selected from the group consisting of Cr x O y , Cr x Co y , Cr x Co y N z , Si x N y , and Mo x Si y . Most preferably, the semi-transmissive portion 130 is made of Cr x O y . Here, the subscripts x, y, and z are natural numbers and indicate the number of each chemical element.
照射光之波長範圍根據曝光系統不同而變化，因此其不受限制。通常，採用一波長範圍為300奈米~440奈米之光。半透光部分130係足夠用於部分透射該照射光，且藉由該半透光部分130之透光量並不受限制。較佳地，半透光部分130透射該照射光之10%~90%。 The wavelength range of the illumination light varies depending on the exposure system, and thus it is not limited. Typically, a range of wavelengths from 300 nm to 440 nm is used. The semi-transmissive portion 130 is sufficient for partially transmitting the illumination light, and the amount of light transmitted by the semi-transmissive portion 130 is not limited. Preferably, the semi-transmissive portion 130 transmits 10% to 90% of the illumination light.
在下文中，參考圖6a及6b，將描述根據本發明之一第三實施例之製造一半色調光罩100之製程。圖6a及6b係根據本發 明之該第三實施例說明製造該半色調光罩100的製程之剖視圖。 Hereinafter, referring to Figures 6a and 6b, a process of manufacturing the halftone mask 100 according to a third embodiment of the present invention will be described. Figures 6a and 6b are based on the present invention This third embodiment illustrates a cross-sectional view of a process for fabricating the halftone mask 100.
如圖6a及6b中所示，在步驟S10中，由Cr或CrO2製成之遮光層120及正型第一光阻141係依序地形成於由石英製成之透明基板110上，且一雷射光束照射至該第一光阻141上，藉此透過該第一光阻141繪製一需要圖案。較佳地，在遮光層120之拐角處形成校準標記。 As shown in FIGS. 6a and 6b, in step S10, the light shielding layer 120 made of Cr or CrO 2 and the positive first photoresist 141 are sequentially formed on the transparent substrate 110 made of quartz, and A laser beam is incident on the first photoresist 141, thereby drawing a desired pattern through the first photoresist 141. Preferably, a calibration mark is formed at the corner of the light shielding layer 120.
在步驟S20中，藉由顯影，將第一光阻141之雷射光束照射之部分移除。在步驟S30中，藉由蝕刻將遮光層120之因移除該第一光阻141而被曝露至外界之部分移除。藉此，形成其中透明基板110被曝露至外界之透光部分121，及其中保留該第一光阻141之遮光部分125。換言之，藉由遮光層120之微影蝕刻製程，形成用於透射光之透光部分121及用於遮蔽光之遮光部分125。 In step S20, the portion irradiated by the laser beam of the first photoresist 141 is removed by development. In step S30, the portion of the light shielding layer 120 that is exposed to the outside by removing the first photoresist 141 by etching is removed. Thereby, the light transmitting portion 121 in which the transparent substrate 110 is exposed to the outside, and the light blocking portion 125 in which the first photoresist 141 is left are formed. In other words, the light transmitting portion 121 for transmitting light and the light blocking portion 125 for shielding light are formed by the lithography etching process of the light shielding layer 120.
在步驟S40中，在保留之第一光阻141及該等曝露之透光部分121上，形成用於部分透射一指定波長範圍內之照射光的半透光層160。在該第三實施例中之半透光層160的上述形成與第二實施例中之半透光層160的形成之區別在於，第二實施例之半透光層160係在移除該保留之第一光阻141之後形成。 In step S40, a semi-transmissive layer 160 for partially transmitting illumination light in a specified wavelength range is formed on the remaining first photoresist 141 and the exposed light-transmissive portions 121. The above-described formation of the semi-transmissive layer 160 in the third embodiment is different from the formation of the semi-transmissive layer 160 in the second embodiment in that the semi-transmissive layer 160 of the second embodiment is removed from the retention. The first photoresist 141 is formed after.
藉由濺射在保留之第一光阻141及該等曝露之透光部分121上塗佈半透光層160。半透光層160係由一部分透射該指定波 長範圍內之照射光的化合物製成。 The semi-transmissive layer 160 is coated on the remaining first photoresist 141 and the exposed transparent portions 121 by sputtering. The semi-transmissive layer 160 is partially transmitted through the specified wave Made of a compound that illuminates light over a long range.
在步驟S50中，將保留之第一光阻141及形成於該保留之第一光阻141上之半透光層160移除。藉此，將遮光部分125曝露至外界，且該半透光層160保留在該等透光部分121上。 In step S50, the remaining first photoresist 141 and the semi-transmissive layer 160 formed on the remaining first photoresist 141 are removed. Thereby, the light shielding portion 125 is exposed to the outside, and the semi-transmissive layer 160 remains on the light transmitting portions 121.
在半透光層160保留在該等透光部分121上之後，將正型第二光阻145塗佈至該保留之半透光層160及該等遮光部分125上(參考步驟S60)。在步驟S60中，一雷射光束照射至第二光阻145上，藉此透過該第二光阻145繪製一需要圖案，從而將半透光層160之必要部分曝露至外界。在步驟S70中，藉由顯影將第二光阻145之雷射光束照射之部分移除。 After the semi-transmissive layer 160 remains on the light-transmissive portions 121, a positive-type second photoresist 145 is applied to the remaining semi-transmissive layer 160 and the light-shielding portions 125 (refer to step S60). In step S60, a laser beam is irradiated onto the second photoresist 145, thereby drawing a desired pattern through the second photoresist 145, thereby exposing a necessary portion of the semi-transmissive layer 160 to the outside. In step S70, the portion irradiated by the laser beam of the second photoresist 145 is removed by development.
在塗佈第二光阻145之後，為了採用該雷射光束在所塗佈之第二光阻145上正確繪製一圖案，較佳地，在第二光阻145之曝光及顯影之前，執行一步驟，即採用形成於遮光層120之拐角處之校準標記來校正照射至該第二光阻145上之雷射光束的照射位置。 After the second photoresist 145 is applied, in order to correctly draw a pattern on the applied second photoresist 145 by using the laser beam, preferably, before the exposure and development of the second photoresist 145, a The step of correcting the irradiation position of the laser beam irradiated onto the second photoresist 145 is performed by using a calibration mark formed at a corner of the light shielding layer 120.
在步驟S80中，藉由濕蝕刻作用於保留之半透光層160的曝露部分，而將透明基板110之指定部分曝露至外界。此時，半透光層160之未藉由濕蝕刻移除而最終保留之部分，對應於半透光部分130。 In step S80, a specified portion of the transparent substrate 110 is exposed to the outside by wet etching on the exposed portion of the remaining semi-transmissive layer 160. At this time, a portion of the semi-transmissive layer 160 that is not retained by wet etching to be finally retained corresponds to the semi-transmissive portion 130.
換言之，將一種部分透射一指定波長範圍內之透射光的化合物塗佈至遮光層120之透光部分121的必要部分上，藉此形成 用於部分透射該指定波長範圍內之透射光的半透光部分130。藉由半透射層160之化合物的成分及厚度可以根據需要而控制半透光部分130之透光率，且根據待形成之圖案的形狀，變化地修正半透光部分130之形狀。 In other words, a compound partially transmitting transmitted light in a specified wavelength range is applied to a necessary portion of the light transmitting portion 121 of the light shielding layer 120, thereby forming A semi-transmissive portion 130 for partially transmitting transmitted light in the specified wavelength range. The light transmittance of the semi-transmissive portion 130 can be controlled as needed by the composition and thickness of the compound of the semi-transmissive layer 160, and the shape of the semi-transmissive portion 130 can be variably corrected according to the shape of the pattern to be formed.
半透光部分130或半透光層160可由各種化合物製成，只要該等合成物能夠部分透射一指定波長範圍內之照射光即可。在本發明中，製成半透光部分130之化合物係選自由CrxOy、CrxCoy、CrxCoyNz、SixNy，及MoxSiy組成之群中。最佳地，半透光部分130係由CrxOy製成。在此，下標x、y及z係自然數且指示各化學元素之數目。 The semi-transmissive portion 130 or the semi-transmissive layer 160 may be made of various compounds as long as the compositions are capable of partially transmitting the illumination light within a specified wavelength range. In the present invention, the compound which is formed into the semi-transmissive portion 130 is selected from the group consisting of Cr x O y , Cr x Co y , Cr x Co y N z , Si x N y , and Mo x Si y . Most preferably, the semi-transmissive portion 130 is made of Cr x O y . Here, the subscripts x, y, and z are natural numbers and indicate the number of each chemical element.
在步驟S90中，將保留在半透光部分130及遮光部分125上之第二光阻145移除。藉此，完成該半色調光罩100之製造。 In step S90, the second photoresist 145 remaining on the semi-transmissive portion 130 and the light-shielding portion 125 is removed. Thereby, the manufacture of the halftone mask 100 is completed.
照射光之波長範圍根據曝光系統不同而變化，因此其不受限制。通常，採用一波長範圍為300奈米~440奈米之光。半透光部分130係足夠用於部分透射該照射光，且藉由該半透光部分130之透光量並不受限制。較佳地，半透光部分130透射該照射光之10%~90%。 The wavelength range of the illumination light varies depending on the exposure system, and thus it is not limited. Typically, a range of wavelengths from 300 nm to 440 nm is used. The semi-transmissive portion 130 is sufficient for partially transmitting the illumination light, and the amount of light transmitted by the semi-transmissive portion 130 is not limited. Preferably, the semi-transmissive portion 130 transmits 10% to 90% of the illumination light.
圖7a及7b係根據本發明之一實施例，說明一種採用一半色調光罩100形成一圖案之方法的剖視圖。下文中將詳述此方法。 7a and 7b are cross-sectional views illustrating a method of forming a pattern using a halftone mask 100, in accordance with an embodiment of the present invention. This method will be detailed below.
如圖7a及7b中所示，在步驟S100中，其上將形成一圖案 之第一層220及第二層230，及一光阻240依序地形成於一玻璃基板210上，將此實施例之一半色調光罩100置於該光阻240之上，且光照射至該半色調光罩100上。在步驟S110中，藉由第一顯影將光阻240選擇性地移除。 As shown in FIGS. 7a and 7b, in step S100, a pattern is formed thereon. The first layer 220 and the second layer 230, and a photoresist 240 are sequentially formed on a glass substrate 210. One halftone mask 100 of this embodiment is placed on the photoresist 240, and the light is irradiated to The halftone mask 100 is on. In step S110, the photoresist 240 is selectively removed by the first development.
藉此，將光阻240之部分241完全移除，光透過半色調光罩100之透光部分121照射在該等部分241上，且將光阻240之部分243部分移除至一指定厚度，光透過半透光部分130照射在該等部分243上。 Thereby, the portion 241 of the photoresist 240 is completely removed, and the light is transmitted through the transparent portion 121 of the halftone mask 100 to the portions 241, and the portion 243 of the photoresist 240 is partially removed to a specified thickness. Light is transmitted through the semi-transmissive portion 130 on the portions 243.
然後，在步驟S120中，將第二層230之因光阻240的第一顯影而被曝露至外界之部分蝕刻，且在步驟S130中，將第一層220之因第二層230之蝕刻而被曝露至外界之部分蝕刻。藉此，透過該等第一層220及第二層230，分別形成了圖案221。 Then, in step S120, the second layer 230 is partially exposed to the outside due to the first development of the photoresist 240, and in step S130, the first layer 220 is etched by the second layer 230. Part of the etch that is exposed to the outside world. Thereby, the pattern 221 is formed through the first layer 220 and the second layer 230, respectively.
在步驟S140中，藉由灰化(ashing)，部分移除在該第一顯影之後的光阻240之保留部分，灰化係乾蝕刻之一種類型，用於藉由濺射氣體僅選擇性移除一有機膜。然後，該等藉由灰化移除之光阻240之部分的厚度與光阻240之部分243的厚度相同，且因將光阻240之部分243移除，第二層230被曝露至外界。 In step S140, the remaining portion of the photoresist 240 after the first development is partially removed by ashing, and a type of dry etching is used for selective selective shifting by sputtering gas. In addition to an organic film. Then, the thickness of the portion of the photoresist 240 removed by ashing is the same as the thickness of the portion 243 of the photoresist 240, and the second layer 230 is exposed to the outside due to the removal of the portion 243 of the photoresist 240.
最後，在步驟S150中，將第二層230之因灰化光阻240而被曝露至外界之部分蝕刻，藉此形成一圖案231。在步驟S160中，將光阻240完全移除。藉此，透過第一層220及第二層 230形成了需要圖案221及231，該等第一層220及第二層230係依序地形成於玻璃基板210上。 Finally, in step S150, the second layer 230 is partially etched by exposure to the outside due to the ashing photoresist 240, thereby forming a pattern 231. In step S160, the photoresist 240 is completely removed. Thereby, through the first layer 220 and the second layer The required patterns 221 and 231 are formed, and the first layer 220 and the second layer 230 are sequentially formed on the glass substrate 210.
藉由使用根據此實施例之上述採用半色調光罩100之方法，同時形成一薄膜電晶體-液晶顯示器(TFT-LCD)之一主動層、一源極/汲極層、一鈍化層，及一像素層係可能的。此外，可將上述方法應用於採用一光罩形成數層之任何製程，例如一形成一彩色濾光片之製程。 By using the above method using the halftone mask 100 according to this embodiment, one active layer of a thin film transistor-liquid crystal display (TFT-LCD), a source/drain layer, a passivation layer, and A pixel layer is possible. In addition, the above method can be applied to any process for forming a plurality of layers using a photomask, such as a process for forming a color filter.
在該半色調光罩100包括多個具有不同透光率之半透光部分130的情況下，採用一單個半色調光罩100製造一具有至少三個層之產品係可能的。 In the case where the halftone mask 100 includes a plurality of semi-transmissive portions 130 having different light transmittances, it is possible to manufacture a product having at least three layers using a single halftone mask 100.
上文描述之半色調光罩100及製造其之方法係應用於製造各種顯示器面板。換言之，可利用該半色調光罩100製造一液晶顯示器面板，且進而用來製造一平面顯示器(FPD)。 The halftone mask 100 described above and the method of manufacturing the same are applied to the manufacture of various display panels. In other words, the liquid crystal display panel can be fabricated using the halftone mask 100, and further used to fabricate a flat panel display (FPD).
藉由以上描述可知，本發明提供一種半色調光罩100，其可應用於一微影蝕刻製程之多個週期，用以縮短製造該光罩之需要時間，及減小該光罩之生產成本，本發明還提供一種製造該半色調光罩100之方法，及一種採用該半色調光罩100之平面顯示器。 As can be seen from the above description, the present invention provides a halftone mask 100 which can be applied to a plurality of cycles of a lithography process to shorten the time required to manufacture the reticle and reduce the production cost of the reticle. The present invention also provides a method of fabricating the halftone mask 100, and a flat panel display using the halftone mask 100.
因為根據氧化鉻(CrxOy)膜之均勻性，即濺射之均勻性，透過本發明之半色調光罩100之一半透光層160，均勻地形成一需要圖案，所以該半色調光罩100尺寸並不受侷限。 Since the uniformity of the chromium oxide (Cr x O y ) film, that is, the uniformity of sputtering, a desired pattern is uniformly formed by one of the semi-transmissive layers 160 of the halftone mask 100 of the present invention, the halftone light is The size of the cover 100 is not limited.
雖然為說明起見，已經揭示本發明之較佳實施例，但是熟悉此項技術者應理解，有可能對本發明實現各種修改、增加物及替代物，而不背離如隨附申請專利範圍中揭示之本發明之範圍及精神。 Although the preferred embodiment of the present invention has been disclosed, it will be understood by those skilled in the art The scope and spirit of the invention.
11‧‧‧透明基板 11‧‧‧Transparent substrate
13‧‧‧透光部分 13‧‧‧Lighting part
15‧‧‧遮光部分 15‧‧‧ shading section
100‧‧‧半色調光罩 100‧‧‧ halftone mask
110‧‧‧透明基板 110‧‧‧Transparent substrate
120‧‧‧遮光層 120‧‧‧ shading layer
121‧‧‧透光部分 121‧‧‧Lighting part
125‧‧‧遮光部分 125‧‧‧ shading section
130‧‧‧半透光部分 130‧‧‧ semi-transparent part
141‧‧‧第一光阻 141‧‧‧First photoresist
145‧‧‧第二光阻 145‧‧‧second photoresist
150‧‧‧半透光層 150‧‧‧ semi-transparent layer
160‧‧‧半透光層 160‧‧‧ semi-transparent layer
210‧‧‧玻璃基板 210‧‧‧ glass substrate
220‧‧‧第一層 220‧‧‧ first floor
221‧‧‧圖案 221‧‧‧ pattern
230‧‧‧第二層 230‧‧‧ second floor
221‧‧‧圖案 221‧‧‧ pattern
240‧‧‧光阻 240‧‧‧Light resistance
241‧‧‧光阻240之部分 241‧‧‧Parts of photoresist 240
243‧‧‧光阻240之部分 243‧‧‧Parts of photoresist 240
藉由以上結合隨附圖式之詳細描述，可更加清楚地理解本發明之上述及其他目的、特徵及其他優點，其中：圖1係一傳統光罩之剖視圖；圖2係根據本發明之一實施例的一半色調光罩之剖視圖；圖3a及3b係根據本發明之實施例，說明該半色調光罩之一半透光層的各種形狀之剖視圖；圖4a及4b係根據本發明之一第一實施例，說明製造一半色調光罩之製程之剖視圖；圖5a及5b係根據本發明之一第二實施例，說明製造一半色調光罩之製程之剖視圖；圖6a及6b係根據本發明之一第三實施例，說明製造一半色調光罩之製程之剖視圖；及圖7a及7b係根據本發明之一實施例，說明採用一半色調光罩形成一圖案之方法之剖視圖。 The above and other objects, features and other advantages of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; A cross-sectional view of a half-tone mask of an embodiment; FIGS. 3a and 3b are cross-sectional views showing various shapes of a semi-transmissive layer of the halftone mask according to an embodiment of the present invention; FIGS. 4a and 4b are diagrams according to one of the present invention. 1 is a cross-sectional view showing a process for fabricating a halftone mask; FIGS. 5a and 5b are cross-sectional views showing a process for fabricating a halftone mask according to a second embodiment of the present invention; and Figs. 6a and 6b are according to the present invention. A third embodiment is a cross-sectional view showing a process for fabricating a halftone mask; and Figs. 7a and 7b are cross-sectional views showing a method of forming a pattern using a halftone mask in accordance with an embodiment of the present invention.
100‧‧‧半色調光罩 100‧‧‧ halftone mask
110‧‧‧透明基板 110‧‧‧Transparent substrate
120‧‧‧遮光層 120‧‧‧ shading layer
121‧‧‧透光部分 121‧‧‧Lighting part
125‧‧‧遮光部分 125‧‧‧ shading section
130‧‧‧半透光部分 130‧‧‧ semi-transparent part
Claims (6)
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| KR20040090273 | 2004-11-08 | ||
| KR20050099477A KR100848815B1 (en) | 2004-11-08 | 2005-10-21 | Half tone mask and fabricating method and flat panel displayq |
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| TW200622512A TW200622512A (en) | 2006-07-01 |
| TWI417671B true TWI417671B (en) | 2013-12-01 |
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| TW94139038A TWI417671B (en) | 2004-11-08 | 2005-11-08 | Half tone mask, method for fabricating the same, and flat panel display using the same |
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| KR (1) | KR100848815B1 (en) |
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| CN102360159A (en) * | 2007-05-11 | 2012-02-22 | Lg伊诺特有限公司 | Halftone mask with multiple half-transmission parts and manufacture method thereof |
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| JP4987075B2 (en) * | 2007-11-01 | 2012-07-25 | アルバック成膜株式会社 | Halftone mask, halftone mask blanks, and method of manufacturing halftone mask |
| CN101599497B (en) | 2009-05-19 | 2011-07-06 | 昆山龙腾光电有限公司 | Thin-film-transistor array substrate and forming method thereof |
| JP2012527639A (en) * | 2009-05-21 | 2012-11-08 | エルジー イノテック カンパニー リミテッド | Halftone mask and manufacturing method thereof |
| KR101947808B1 (en) * | 2012-02-29 | 2019-04-25 | 엘지디스플레이 주식회사 | Thin film transistor array substrate and method for manufacturing of the same |
| KR101282040B1 (en) * | 2012-07-26 | 2013-07-04 | 주식회사 에스앤에스텍 | Phase shift blankmask and photomask using the flat pannel display |
| CN103412463A (en) * | 2013-08-27 | 2013-11-27 | 南通富士通微电子股份有限公司 | Mask plate and manufacturing method thereof |
| JP6761255B2 (en) * | 2016-02-15 | 2020-09-23 | 関東化学株式会社 | Etching solution and photomask processed by etching solution |
| JP6557638B2 (en) * | 2016-07-06 | 2019-08-07 | 株式会社エスケーエレクトロニクス | Halftone mask and halftone mask blanks |
| CN108227290A (en) * | 2018-01-31 | 2018-06-29 | 京东方科技集团股份有限公司 | Mask plate, the organic protection layer obtained using it and display device |
| CN111367142A (en) * | 2018-12-26 | 2020-07-03 | 聚灿光电科技（宿迁）有限公司 | Novel optical mask plate with different light transmission |
| CN110068952B (en) * | 2019-04-08 | 2020-12-25 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20060049114A (en) | 2006-05-18 |
| KR100848815B1 (en) | 2008-07-28 |
| TWI512410B (en) | 2015-12-11 |
| TW201403258A (en) | 2014-01-16 |
| JP2013167907A (en) | 2013-08-29 |
| CN102073211A (en) | 2011-05-25 |
| CN102073211B (en) | 2013-06-12 |
| CN1773374A (en) | 2006-05-17 |
| TW200622512A (en) | 2006-07-01 |
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