KR101036438B1 - A gray tone mask and a method for manufacturing the same - Google Patents

Abstract

Provided are a gray tone mask having a high contrast of marks formed in a non-device pattern region, and easy to detect, and a method of manufacturing the same.

A method of manufacturing a gray tone mask having a device pattern having a light shielding portion, a light transmitting portion, and a semi-transmissive portion, and a mark pattern used for positioning, comprising the steps of: preparing a mask blank having at least a light shielding film formed on a transparent substrate; Forming a pattern, and etching the light shielding film using the first resist pattern as a mask; forming a light transmissive film on the transparent substrate on which the light shielding pattern is formed; and a second resist pattern And forming a light portion pattern having the step of etching the semi-transmissive film using the second resist pattern as a mask. In the light shielding portion pattern forming step, the light shielding portion and the light transmitting portion are formed together with the light shielding portion pattern formation. The branches form a desired mark pattern and before drawing of the second drawing pattern in the semi-transmissive portion pattern forming step. The transparent portion of the mark pattern having a step of semi-transparent film is not present.

Gray tone mask

Description

A gray tone mask and a method for manufacturing the same}

1A is a cross-sectional view schematically showing a manufacturing process of a gray tone mask according to a first embodiment of the present invention.

FIG. 1B is a schematic cross-sectional view of a manufacturing process of a gray tone mask according to a first embodiment of the present invention (continuation of the manufacturing process of FIG. 1A). FIG.

2 is a cross-sectional view schematically showing a manufacturing process of a gray tone mask according to a second embodiment of the present invention.

3 is a cross-sectional view schematically showing a manufacturing process of a gray tone mask according to a third embodiment of the present invention.

4A is a cross-sectional view schematically showing a manufacturing process of a TFT substrate using a gray tone mask.

4B is a schematic cross-sectional view illustrating a process for manufacturing a TFT substrate using a gray tone mask (continuity of the process of FIG. 4A).

Fig. 5 is a plan view showing an example of a fine pattern type gray tone mask.

6 is a plan view showing an example of a graytone mask pattern of a halftone film type.

Fig. 7 is a plan view of a mask pattern for explaining a method of manufacturing a halftone film type gray tone mask.

8A is a cross-sectional view schematically showing an example of a manufacturing process of a gray tone mask.

FIG. 8B is a sectional view schematically showing an example of the manufacturing process of the gray tone mask (continuation of the manufacturing process of FIG. 8A). FIG.

9A is a plan view of the graytone mask 20A, b is a sectional view of a portion of the mark pattern M formed in the non-device pattern region of the mask, and (c) is a sectional view of the device pattern D;

(Explanation of reference numerals for the main parts of the drawings)

20A, 20B, 20C, 20D Gray Tone Mask

21 transparent substrate

22 shading film

23 translucent membrane

24 resist film

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gray tone mask used for the manufacture of a liquid crystal display (hereinafter referred to as LCD), and a manufacturing method thereof.

In the conventional LCD field, a method of reducing the number of photomasks required for manufacturing has been proposed. In other words, thin film transistor liquid crystal displays (hereinafter referred to as TFT-LCDs) are rapidly commercialized due to the advantages that they are thinner and have lower power consumption than CRTs (cathode ray tubes). The TFT-LCD is a schematic structure in which a TFT substrate having a structure in which TFTs are arranged in each pixel arranged in a matrix form and a color filter in which red, green, and blue pixel patterns are arranged corresponding to each pixel are superimposed on each other under a liquid crystal phase. Has In TFT-LCD, the number of manufacturing processes was large, and it was manufactured using 5-6 photomasks only by a TFT substrate. Under these circumstances, a method of manufacturing a TFT substrate using four photomasks has been proposed (e.g., Monthly FPD Intelligence, May 1999, p. 31-35).

This method reduces the number of masks used by using a photomask (hereinafter referred to as a gray tone mask) having a light shielding portion, a light transmitting portion, and a semi-transmissive portion (gray tone mask).

FIG. 4A and FIG. 4B (FIG. 4B shows an example of the manufacturing process of a TFT board | substrate using a gray tone mask for the continuation of the manufacturing process of FIG. 4A).

The metal film for gate electrodes is formed on the glass substrate 1, and the gate electrode 2 is formed by the photolithography process using a photomask. Thereafter, the gate insulating film 3, the first semiconductor film 4 (a-Si), the second semiconductor film 5 (N + a-Si), the source drain metal film 6, and the positive photoresist film ( 7) is formed (FIG. 4A (1)). Next, the positive photoresist film 7 is exposed and developed by using the gray tone mask 10 having the light blocking portion 11, the light transmitting portion 12, and the semi-transmissive portion 13, thereby producing a TFT channel portion and a source. The first resist pattern 7a is formed so as to cover the drain formation region and the data line formation region and become thinner than the source drain formation region (FIG. 4A (2)). Next, using the first resist pattern 7a as a mask, the source drain metal film 6 and the second and first semiconductor films 5 and 4 are etched (FIG. 4A (3)). Next, the thin resist film in the channel portion forming region is removed by ashing with oxygen to form a second resist pattern 7b (Fig. 4B (1)). Thereafter, using the second resist pattern 7b as a mask, the source drain metal film 6 is etched and the source / drain 6a, 6b is formed, and then the second semiconductor film 5 is etched ( 4B (2)) The last remaining second resist pattern 7b is peeled off (FIG. 4B (3)).

As a gray tone mask used here, it is known that it is a structure in which the translucent part is formed in the fine pattern. For example, as shown in FIG. 5, the light-shielding portions 11a and 11b corresponding to the source / drain, the light-transmitting portion 12 and the semi-transmissive portion (gray tone portion; 13) corresponding to the channel portion, and the semi-transmissive portion (13) is a region in which the light shielding pattern 13a formed of a fine pattern below the resolution limit of the LCD exposure machine using the gray tone mask is formed. The light shielding portions 11a and 11b and the light shielding pattern 13a are usually formed of a film having the same thickness made of the same material such as chromium or a chromium compound. The resolution limit of the LCD exposure machine using the gray tone mask is about 3 mu m in the stepper type exposure machine and about 4 mu m in the mirror projection type exposure machine. For this reason, for example, in FIG. 5, the space width of the transmissive part 13b in the translucent part 13 shall be less than 3 micrometers, and the line width of the light shielding pattern 13a shall be less than 3 micrometers which are below the resolution limit of an exposure machine.

However, the semi-transmissive portion of the fine pattern type described above may be a line-and-space type or a fine pattern for having a halftone effect between the design of the gray tone portion, specifically, the light shielding portion and the light transmitting portion. There is a choice between the dot type or other pattern, and in the case of the line and space type, how much the line width should be, and how the ratio of the part where light is transmitted and the part that is shielded is determined. The design had to be carried out in consideration of many things such as how much to design the overall transmittance. Moreover, also in mask manufacture, management of the center value of the line | wire width, the control of the deviation of the line | wire width in a mask, and the very difficult production technique were calculated | required.

For this reason, it has conventionally been proposed to make a portion to be halftone exposed to a semitransparent halftone film (semitransmissive film). By using this halftone film, it is possible to reduce the exposure amount of the halftone part and to perform halftone exposure. By changing to the halftone film, it is sufficient to examine only how much the total transmittance is necessary in the design, and the mask can be produced only by selecting the film paper or the film thickness of the halftone film also in the mask. Therefore, in mask manufacture, it is enough to just control the film thickness of a halftone film, and it is comparatively easy to manage. In addition, since the halftone film can be easily patterned by a photolithography process, even a complicated pattern shape becomes possible.

The manufacturing method of the gray-tone mask of the halftone film type currently proposed is the following method. Here, as an example, the pattern 100 for LCD board | substrates as shown in FIG. 6 is mentioned and demonstrated. The pattern 100 includes a light shielding portion pattern 101 composed of patterns 101a and 101b, a semi-transmissive portion pattern 103 between the patterns 101a and 101b, and a projection formed around these patterns. It consists of the miner pattern 102.

First, a mask blank in which a translucent film and a light shielding film are sequentially formed on a transparent substrate is prepared, and a resist film is formed on this mask blank. Next, a pattern drawing is performed and developed to form a resist pattern in a region corresponding to the light shielding portion pattern 101 and the semi-transmissive portion pattern 103 of the pattern 100. Subsequently, by etching in a suitable manner, the light shielding film in the region corresponding to the light transmitting portion pattern 102 in which the resist pattern is not formed and the semi-transmissive film in the lower layer are removed to form a pattern as shown in Fig. 7 (1). do. That is, the light transmitting portion 202 is formed, and at the same time, the light blocking pattern 201 of the region corresponding to the light blocking portion and the semi-transmissive portion of the pattern 100 is formed. After removing the remaining resist pattern, a resist film is again formed on the substrate, and pattern drawing is performed to develop the resist pattern in the region corresponding to the light shielding portion pattern 101 of the pattern 100 at this time. Next, only the light shielding film of the area | region of the semi-transmissive part in which the resist pattern is not formed is removed by appropriate etching. As a result, a pattern corresponding to the pattern 100 is formed as shown in FIG. That is, the transflective part by the pattern 203 of a translucent film is formed, and the patterns 201a and 201b of a light shielding part are formed simultaneously.

However, according to such a conventional method for manufacturing a gray tone mask, in the case where a material having the same main component (for example, chromium and a chromium compound) is used for the light shielding film and the semitransmissive film, the etching characteristics of the light shielding film and the semitransmissive film are approximated. Therefore, in the second photolithography process described above, when only the light shielding film in the region of the semi-transmissive portion is removed by etching, it is difficult to determine the end point of the etching. If the etching is insufficient, the light shielding film remains on the semi-transmissive film, and the etching passes. In this case, there is a problem that the film of the translucent film is reduced, so that the desired translucent property cannot be obtained in any way. Therefore, the light shielding film and the semi-transmissive film need to select a combination of materials having different etching characteristics at least, thereby limiting the range of material selection. In addition, even if a combination of materials having different etching characteristics is selected for the light shielding film and the semi-transmissive film, it is not possible to completely prevent the film reduction of the above-mentioned semi-transmissive film.

Japanese Patent Application Laid-Open No. 2002-189281 discloses a semi-transmissive film on a transparent substrate in a mask blank in order to prevent film reduction of the lower semi-transmissive film when etching removes only the light shielding film of the semi-transmissive region in the second photolithography process described above. It is disclosed to provide an etching stopper film between the light shielding film. As described in Japanese Patent Application Laid-Open No. 2002-189281, by providing an etching stopper film between a translucent film on a transparent substrate and a light shielding film in a mask blank to be used, even if the etching of the light shielding film of the semi-transmissive part region is slightly excessively performed, Film reduction of the membrane can be prevented. However, formation of three layers of the semi-transmissive film, the etching stopper film, and the light shielding film is required in the layer composition of the mask blanks to be used, which increases the manufacturing cost. Moreover, since the whole film thickness becomes thick, aspect-ratio (ratio of pattern dimension and height) is large, As a result, the pattern shape and pattern precision of a light shielding part become worse, and also there exists a problem of etching time being long. In addition, when removing the etching stopper film | membrane remaining after the etching of a light shielding film, the problem of the film | membrane reduction of the semi-translucent film of a base also arises. Even if the etching stopper film remains, the material which does not affect the transmissivity of the translucent film can be left without being removed. However, the material and film thickness of the etching stopper film are limited.

A gray tone mask capable of solving this problem, wherein the light shielding portion is formed of a light shielding film provided on a transparent substrate and a semi-transmissive film thereon, and the semi-transmissive portion is a semi-transmissive film on a transparent substrate exposing a region corresponding to the semi-transmissive portion. The formed gray tone mask has been previously proposed by the present applicant (Special Application 2004-65115).

As a manufacturing method of this kind of gray tone mask, it can manufacture by the following method, for example.

First, the mask blank in which the light shielding film was formed on the transparent substrate is prepared.

Subsequently, a resist pattern of a region corresponding to the light shielding portion is formed on the mask blank, and the exposed light shielding film is etched using the resist pattern as a mask to form a light shielding film pattern, and the region corresponding to the translucent portion and the light transmitting portion Expose the transparent substrate.

Subsequently, the resist pattern which remained in the said process is removed, and the translucent film is formed in the whole surface on the obtained board | substrate.

In addition, a resist pattern is formed in the area | region corresponding to the said light shielding part and a semi-transmissive part, and a light transmissive part is formed by etching the exposed semi-transmissive film using this resist pattern as a mask.

In addition, it can manufacture also by the following method.

That is, a resist pattern of a region corresponding to the light blocking portion and the light transmitting portion is formed on the mask blank, and the exposed light shielding film is etched using the resist pattern as a mask to expose the transparent substrate of the region corresponding to the translucent portion. .

Next, the resist pattern which remained in the said process is removed, and a translucent film is formed in the whole surface on the obtained board | substrate.

Further, a resist pattern is formed in regions corresponding to the light shielding portion and the semitransmissive portion, and the light transmissive portion and the light shielding portion are formed by etching the exposed semitransmissive film and the light shielding film using the resist pattern as a mask.

According to the gray mask, the transflective part is formed by directly forming a transflective film on a transparent substrate exposing a region corresponding to the transflective part. Therefore, when forming the transflective part as in the prior art, only the upper light shielding film is removed by etching. There is no need to expose the underlying semi-transmissive film, and therefore, the light-shielding film and the semi-transmissive film can be formed together with the etching properties having the same or the same approximation, and thus the choice of the film material is wide. Therefore, the etching stopper film provided between the conventional light shielding film and the semi-transmissive film is unnecessary, and the whole film thickness can be made thin and the aspect ratio can be made small.

By the way, in the manufacturing method of the gray tone mask formed by the semi-transmissive film on the transparent substrate which exposed the area | region corresponding to the semi-transmissive part mentioned above, it is necessary to perform pattern drawing twice in order to form a resist pattern. Therefore, it is conceivable to form a mark for aligning the position of the second pattern drawing by etching the light shielding film in the same manner as in the normal pattern at the time of the first pattern formation, to perform alignment on the basis of the mark, and to perform the second drawing. .

8A and 8B, the resist pattern 24a in a region corresponding to the light blocking portion on the mask blank (FIG. 8A (1)) on which the light blocking film 22 is formed on the transparent substrate 21 is described. (Figure 2), using the resist pattern 24a as a mask, the exposed light shielding film 22 is etched to form the light shielding film pattern 22a, and the translucent and light transmissive parts except the light shielding part are formed. The transparent substrate 21 of the area | region corresponding to this is exposed (FIG. 3).

Next, the resist pattern 24a which remained in the said process is removed (FIG. 4), and the semi-transmissive film 23 is formed in the whole surface on the obtained board | substrate (FIG. 8B (5)). Further, the device pattern portion has a semi-transmissive portion (A (d) region shown), a light shielding portion (B (d) region shown) and a light-transmitting portion (C (d) region shown), and the mark pattern portion for positioning It is assumed that it has a light shielding part (B (m) area | region shown) and a light transmitting part (C (m) area | region shown).

Subsequently, a resist film 24 is formed on the entire surface of the substrate (FIG. 8B (6)), and drawing and developing to expose the region (C (d) region) corresponding to the light transmitting portion of the device pattern portion are performed to develop the resist pattern 24b. ) Is formed (figure 7), and the light-transmitting portion is formed by etching the semi-transmissive film 23 of the exposed device pattern light-transmitting portion using this resist pattern 24b as a mask (figure 8).

By removing the remaining resist pattern 24b, a gray tone mask 20A in which a device pattern and a mark pattern are formed is obtained (Fig. 9). 9, a is a top view of the gray-tone mask 20A, b is sectional drawing of the mark pattern M part formed in the non-device pattern area of the mask, (c) is sectional drawing of the device pattern D to be. In addition, the mark pattern M in FIG. 9 and the device pattern D shown by the enlarged view are an example. 8A and 8B, the device pattern and the mark pattern are schematically illustrated, and do not strictly correspond to the device pattern and the mark pattern shown in FIG. 9.

By the way, when the first pattern (light shielding film pattern 22a) is formed (FIG. 8A (4)), the mark pattern having the light shielding portion (B (m) region) and light transmitting portion (C (m) region) is formed together. By forming the semi-transmissive film 23 performed in the next step, the semi-transmissive film is also formed in the light-transmitting portion of the mark pattern. If the alignment is performed by detecting the mark using the transmitted light or the reflected light based on the mark, and the second drawing (drawing to form the resist pattern 24b) is performed, the light projecting portion of the mark pattern is detected at the time of mark detection. Since the semi-transmissive film 23a and the resist film 24 are formed, there is a problem that the contrast between the light-transmitting portion and the light-shielding portion of the mark pattern is low, making it difficult to recognize the mark and making the detection difficult. In other words, when the mark is detected by the transmitted light, the transmittance of the light-transmitting portion of the mark pattern is attenuated by the semi-transmissive film 23a and the resist film 24, and the contrast is lowered because the difference in transmittance with the light-shielding portion of the mark pattern becomes smaller. When the mark is detected by the reflected light, contrast is lowered because the light transmitting portion and the light shielding portion of the mark pattern become equal reflectances.

Also in the gray tone mask, similarly to the ordinary photomask, it is necessary to form various marks such as alignment marks for use in alignment with the transfer substrate when using the mask in the non-device pattern region of the mask. In the mask on which the light shielding film pattern is formed, a mark is formed by etching the light shielding film in the non-device pattern region. However, in the gray tone mask, in the case where the above-described alignment marks for pattern drawing and the same or separate marks are formed in the same manner, the translucent portion of the mark pattern formed on the light shielding film of the non-device pattern region of the mask is covered with the semi-transmissive film. Since the semi-transmissive portion (area A) is formed (see FIG. 8B (9)), there is a problem that detection is difficult due to low contrast when the mark gum is released using transmitted light and reflected light.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, wherein a light shielding portion is formed of a light shielding film provided on a transparent substrate and a semi-transmissive film thereon, and the semi-transmissive film is formed of a semi-transmissive film on a transparent substrate exposing a region corresponding to the semi-transmissive portion. It is an object of the present invention to provide a gray tone mask having a high contrast of a mark formed in a non-device pattern region in a gray tone mask, which is easy to detect, and a manufacturing method thereof.

In order to solve the above problem, the present invention has the following configuration.

(Configuration 1) A method for producing a gray tone mask having a device pattern having a light shielding portion, a light transmitting portion, and a semi-transmissive portion, and a mark pattern used for positioning, comprising: preparing a mask blank on which a light shielding film is formed on a transparent substrate; And forming a first resist pattern by drawing and developing a first drawing pattern on the first resist film for forming the light shielding pattern, and etching the light shielding film using the first resist pattern as a mask. Pattern forming step, forming a semi-transmissive film on the transparent substrate on which the light-shielding part pattern is formed, and drawing a second drawing pattern on the second resist film formed on the semi-transmissive film to form the semi-transmissive part pattern Developing to form a second resist pattern, and etching the semi-transmissive film using the second resist pattern as a mask. Having a semi-transmissive part pattern formation process, in the said light-shielding part pattern formation process, forming the desired mark pattern which has a light-shielding part and a light transmission part with formation of a light-shielding part pattern, and drawing of the 2nd drawing pattern in the said semi-transmissive part pattern formation process It is a manufacturing method of a gray tone mask characterized by having the process which prevents a transflective film from a translucent part in the said mark pattern before.

(Configuration 2) In the configuration 1, the step of preventing the translucent film from being present in the transmissive portion in the mark pattern includes forming the translucent film by removing the translucent film except at least the transmissive portion of the mark pattern. It is a process of forming, It is a manufacturing method of a gray tone mask.

(Configuration 3) In Configuration 1, the step of preventing the translucent film from being present in the transmissive portion in the mark pattern is a step of removing the translucent film in the transmissive portion of the mark pattern at least after the translucent film is formed. It is a manufacturing method of a gray tone mask characterized by the above-mentioned.

(Configuration 4) In any one of Configurations 1 to 3, before the second writing pattern is drawn in the semi-transmissive portion pattern forming step, the second resist film is further present in the light transmitting portion in the mark pattern. The second resist film is coated except at least the light-transmitting portion of the mark pattern, or after forming the second resist film, at least the second resist film in the light-transmitting portion of the mark pattern is removed. .

(Configuration 5) A method for producing a gray tone mask in which a device pattern having a light shielding portion, a light transmitting portion, and a semi-transmissive portion, and a mark pattern used for positioning, is provided, comprising: preparing a mask blank on which a light shielding film is formed on a transparent substrate; And drawing and developing a first drawing pattern in the first resist film for forming the light shielding portion pattern to form a first resist pattern, and etching the light shielding film using the first resist pattern as a mask. The process of forming a light pattern, forming a semi-transmissive film on the transparent substrate on which the light shield is formed, and drawing a second drawing pattern on the second resist film formed on the semi-transmissive film to form the semi-transmissive pattern And developing to form a second resist pattern, and etching the semi-transmissive film using the second resist pattern as a mask. And a semi-transmissive portion pattern forming step, wherein in the light-shielding portion pattern forming step, a desired mark pattern having a light-shielding portion and a light-transmitting portion is formed together with the light-shielding portion pattern formation, and the second drawing pattern in the semi-transmissive portion pattern-forming step Before drawing, the second resist film is applied except at least the light-transmitting portion of the mark pattern so that the second resist film does not exist in the light-transmitting portion in the mark pattern, or at least the mark pattern is formed after the formation of the second resist film. It is a manufacturing method of a gray tone mask characterized by removing the 2nd resist film in a light part.

(Configuration 6) A gray tone mask having a device pattern having a light shielding portion, a light transmitting portion, and a semi-transmissive portion, and a mark pattern used for positioning, wherein the light shielding portion is laminated on a light shielding film provided on a transparent substrate and part or all thereon. The semi-transmissive portion is formed of a semi-transmissive membrane, the transmissive portion is formed by a portion exposed by the transparent substrate, and the mark pattern is formed by exposing the light-shielding portion and the transparent substrate formed of at least a light-shielding membrane. It is a manufacturing method of a gray tone mask formed from the light transmission part.

(Configuration 7) A gray tone mask blank in which a translucent film is formed on a light shielding film pattern formed on a transparent substrate,

The said light shielding film pattern is a manufacturing method of the gray-tone mask blank characterized by including the mark pattern used for alignment, and the semi-transmissive film formed in the area | region except at least the said mark pattern.

According to the structure 1, the manufacturing method of the gray-tone mask of this invention is a process of preparing the mask blank in which the light shielding film was formed at least on the transparent substrate, the said light shielding part pattern formation process, and the transparent substrate in which the light shielding part pattern was formed. The light-shielding part pattern forming process WHEREIN: The light-shielding part pattern formation process WHEREIN: A desired mark pattern which has a light-shielding part and a light-transmitting part is formed with the light-shielding part pattern formation in the said light-shielding part pattern formation process, The said semi-transmissive part pattern formation process Before the drawing of the second drawing pattern in, the step of preventing the translucent film from being present in the light transmitting portion in the mark pattern is provided.

Therefore, the pattern drawing for forming the resist pattern is performed twice, and the mark for aligning the position of the two pattern drawing is formed in the non-device pattern area of the mask in the same manner as the normal pattern (device pattern) in the first pattern formation. When the alignment is performed based on the mark and the second drawing is performed, the transflective portion of the mark pattern and the light blocking portion in the mark pattern are prevented from being present in the translucent portion of the mark before the second drawing. And since the contrast of reflected light is high and a mark is easy to recognize, the mark detection at the time of the 2nd drawing is easy. Also in the finally obtained gray tone mask, since the mark pattern is formed of at least a light shielding portion made of a light shielding film and a light transmissive portion exposed to a transparent substrate, the contrast between the light transmitting portion and the light shielding portion in the mark pattern is high. The mark can be easily detected when used for alignment with the transfer substrate.

Furthermore, in the process of forming the said transflective film as in the structure 2, before forming the 2nd drawing pattern in the said semi-transmissive part pattern formation process by forming a film | membrane except the translucent part of the said mark pattern at least, The transflective film may be prevented from being present at least in the light transmitting portion of the mark pattern. As a result, the contrast between the transmitted light and the reflected light of the mark is increased, thereby making it easy to detect the mark during alignment. As a method of forming a film | membrane in the said semi-transmissive film except at least the translucent part of the said mark pattern, the said translucent film is formed, for example through the shielding member which covers at least the transmissive part of the said mark pattern.

In addition, as in the configuration 3, at least the mark pattern after the semi-transmissive film is formed, and at least before the drawing of the second drawing pattern in the semi-transmissive portion pattern forming step by removing the semi-transmissive film at the transmissive portion of the mark pattern. It is possible to prevent the translucent film from being present in the transmissive portion of the. As a result, the contrast between the transmitted light and the reflected light of the mark is increased, thereby making it easy to detect the mark during alignment.

In addition, as in the configuration 4, the semi-transmissive film is applied by applying the second resist film except at least the light-transmitting portion of the mark pattern or by removing the second resist film in the light-transmitting portion of the mark pattern at least after forming the second resist film. It is possible to prevent the second resist film from being present in the light transmitting portion in the mark pattern before drawing the second drawing pattern in the light portion pattern forming step. As a result, in addition to the absence of the semi-transmissive film at least in the light-transmitting portion of the mark pattern described above, the second resist film is also absent, so that the light-transmitting portion of the mark pattern is exposed to the transparent substrate and the transmittance decrease by the resist film is reduced. By suppressing, a higher contrast of the transmitted light and the reflected light between the light shielding portion and the light transmitting portion of the mark pattern is obtained, and the mark can be more easily recognized, so that the mark detection at the second drawing becomes easier.

According to the constitution 5, the method for manufacturing a gray tone mask of the present invention includes the steps of preparing a mask blank with at least a light shielding film formed on a transparent substrate, the light shielding part pattern forming step, and a transparent substrate on which the light shielding part pattern is formed. Forming a semi-transmissive film on the substrate and forming the semi-transmissive portion pattern; in the light-shielding portion pattern forming step, a desired mark pattern having a light-shielding portion and a light-transmitting portion is formed together with the light-shielding portion pattern formation, and the semi-transmissive portion pattern Before drawing the second drawing pattern in the forming step, the second resist film is applied except at least the light portion of the mark pattern so that the second resist film does not exist in the light transmitting portion in the mark pattern, or the second resist film After formation, at least the second resist film in the light transmitting portion of the mark pattern is removed.

As a result, since the second resist film does not exist in the light-transmitting portion of at least the mark pattern described above, the decrease in the transmittance of the light-transmitting portion of the mark pattern by the second resist film can be suppressed, so that the second resist film is present in the light-transmitting portion of the mark pattern. Compared with the case where it is, contrast of transmitted light and reflected light improves, and the mark detection at the time of the second drawing becomes easier.

In addition, as in the configuration 6, the gray tone mask of the present invention is formed with a light shielding film provided on a transparent substrate and a semi-transmissive film laminated on a part or all thereon, and the semi-transmissive part is semi-transmissive. The light-transmitting portion is formed of a film, and the light-transmitting portion is formed by a portion exposed by the transparent substrate, and the mark pattern is formed of a light-shielding portion made of at least a light-shielding film and a light-transmitting portion exposed by the transparent substrate, so that the light-transmitting portion and the light-shielding portion in the mark pattern are formed. The contrast between the transmitted light and the reflected light is high, so that a mark can be easily detected when using the mask for alignment with the transfer substrate.

In addition, as in the configuration 7, in the gray tone mask of the present invention, in the gray tone mask blank in which the semi-transmissive film is formed on the light shielding film pattern formed on the transparent substrate, the light shielding film pattern includes a mark pattern used for alignment, at least Since the semi-transmissive film is formed in the area | region except the said mark pattern, when carrying out drawing after forming a resist film in a gray tone mask using this gray tone mask and performing drawing on the said alignment mark, the said Since the semi-transmissive film is not formed in the light transmitting portion of the mark, the contrast between the light transmitting portion and the light blocking portion in the mark is high, so that the mark can be easily recognized, so that the mark is easily detected. Also, in the finally obtained gray tone mask, the mark pattern is formed of at least a light shielding portion made of a light shielding film and a light transmitting portion exposed to a transparent substrate, so that the contrast between the light transmitting portion and the light shielding portion in the mark pattern is high, which is avoided when the mask is used. The mark can be easily detected when used for alignment with the transfer substrate.

Hereinafter, the present invention will be described in detail by way of examples.

(First embodiment)

1A and 1B show a first embodiment of a method for manufacturing a gray tone mask according to the present invention, and are sectional views schematically showing the manufacturing process in order.

In the mask blank used in the present embodiment, the light shielding film 22 is formed on a transparent substrate 21 such as quartz glass as shown in Fig. 1A (1).

Here, as a material of the light shielding film 22, it is preferable that a high light shielding property is obtained by a thin film, for example, Cr, Si, W, Al, etc. are mentioned.

In addition, the mask blank is obtained by forming the light shielding film 22 on the transparent substrate 21, and the method of forming the film is appropriately selected from a method suitable for the film species, such as a vapor deposition method, a sputtering method, and a CVD (chemical vapor deposition) method. Just do it. There is no restriction | limiting in particular regarding a film thickness, What is necessary is just to form it with the film thickness optimized so that favorable light-shielding property can be obtained.

In the gray tone mask 20B of the present embodiment obtained by using the mask blank, as shown in Fig. 1B (9), a device pattern and a mark pattern are formed. The device pattern has a semi-transmissive portion (A (d) region shown), a light shielding portion (B (d) region shown) and a light-transmitting portion (C (d) region shown), and the mark pattern for alignment is a light-shielding portion (B (m) region shown) and a light projecting portion (C (m) region shown). The light shielding portion of the device pattern is formed by the light shielding film 22a provided on the transparent substrate 21 and the translucent film 23 thereon, and the semi-transmissive portion is formed by the semi-transmissive film 23 on the transparent substrate 21. The light transmitting portion is formed by a portion exposed by the transparent substrate 21. In addition, the mark pattern is formed in the non-device pattern region of the mask, and is formed by the light shielding portion made of the light shielding film 22a provided on the transparent substrate 21 and the light transmitting portion exposed by the transparent substrate 21. In the plan view, the device pattern and the mark pattern are, for example, the same as the mark pattern M in FIG. 9 and the device pattern D shown in the enlarged view. 1A and 1B of the present embodiment schematically show the device pattern and the mark pattern, and do not strictly correspond to the device pattern and the mark pattern shown in FIG.

Next, the manufacturing process of the gray tone mask 20B using the said mask blank is demonstrated.

First, for example, a drawing-type resist for drawing is applied onto this mask blank (FIG. 1A (1)) and baked to form a resist film, and drawing is performed using an electron beam drawing machine, a laser drawing machine, or the like. The drawing data in this case is, for example, the case of the device pattern D shown in Fig. 9 described above, and the pattern data corresponding to the semi-transmissive portion pattern (A region) and the transmissive portion (C region) therein. And pattern data corresponding to the light transmitting portion of the mark pattern for positioning. After drawing, this is developed and a region for forming the translucent portion and the transmissive portion of the device pattern on the mask blank (regions of A (d) and C (d) shown in FIG. 1A), and the region for forming the transmissive portion of the mark pattern. In the region (C (m) shown in FIG. 1A), the resist film is removed to form a light shielding portion of the device pattern (region B (d) shown in FIG. 1A) and a region for forming the light shielding portion of the mark pattern. In the region of B (m) shown in Fig. 1A, a resist pattern 24a in which a resist film remains is formed (see Fig. 1A (2)).

Next, the exposed light shielding film 22 is etched using the formed resist pattern 24a as a mask to form a light shielding film pattern 22a corresponding to each light shielding portion of the device pattern and the mark pattern (FIG. 1A (3)). Reference). In the region (A (d) and C (d) regions) corresponding to the translucent portion and the transmissive portion of the device pattern, and the region (C (m) region) corresponding to the transmissive portion of the mark pattern, the light shielding film 22 The underlying transparent substrate 21 is exposed by etching. Therefore, in this step, a desired mark pattern is formed together with the light shielding part pattern of the device pattern.

The remaining resist pattern 24a is removed using ashing with oxygen, concentrated sulfuric acid, or the like (see FIG. 1A (4)).

Next, the semi-transmissive film 23 is formed on the board | substrate which has the light shielding film pattern 22a on the transparent substrate 21 obtained as mentioned above, and a gray tone mask blank is obtained (refer FIG. 1B (5)). At this time, the shielding plate 30 covering at least the region corresponding to the light transmitting portion of the mark pattern is disposed and the semi-transmissive film 23 is formed so that the semi-transmissive film 23 is not formed at least in the light transmitting portion of the mark pattern. In the region corresponding to the transflective portion and the transmissive portion of the device pattern, the translucent film 23 is directly formed on the exposed transparent substrate 21.

As the material of the semi-transmissive membrane 23, when the transmissive portion has a transmittance of 100%, it is preferable that semi-transmittance of about 50% is obtained. For example, Cr compounds (oxides of Cr, nitrides, oxynitrides, Fluoride), MoSi, Si, W, Al and the like. Si, W, Al, etc. are materials which can obtain high light-shielding property or semi-permeability also by the film thickness. In addition, the transmittance here means the transmittance | permeability with respect to the wavelength of the exposure light of the exposure machine for large LCDs which uses a gray tone mask, for example. In addition, the transmittance of the translucent membrane need not be limited to about 50% at all. The extent to which the translucency of the translucent portion is limited is a matter of design.

In addition, the combination of the materials of the light shielding film 22 and the translucent film 23 is not particularly limited in the present invention. The etching characteristics of the films may be the same or approximate, or the etching characteristics of the films may be different. That is, in the present invention, since the semi-transmissive part is formed by directly forming the semi-transmissive film on the transparent substrate exposing the region corresponding to the translucent part, the etching properties of the light-shielding film and the semi-transmissive film are the same, Or it is possible to choose a combination of approximate materials. For example, since a combination of the same material and a material having the same main component (for example, Cr and Cr compounds, etc.) can be arbitrarily selected, the range of selection is wide.

As for the method of forming the translucent film 23, a method suitable for the film type, such as a vapor deposition method, a sputtering method, or a CVD (chemical vapor deposition) method, may be appropriately selected in the same manner as in the case of the light shielding film 22 described above. There is no restriction | limiting in particular about the film thickness of the semi-transmissive film 23, What is necessary is just to form it in the film thickness optimized so that desired semi-transmissivity can be obtained.

Next, the positive resist is applied to the entire surface and baked to form a resist film 24 (see Fig. 1B (6)).

Then, the second drawing is performed. The drawing data at this time is pattern data corresponding to the light transmitting portion (C (d) region) of the device pattern. The second drawing is based on the mark formed in the previous light shielding film pattern 22a forming step (FIG. 1A (4)), for example, by irradiating light having a wavelength of 413 nm and detecting the reflected light to perform alignment. Since the translucent film 23 is not formed in the transmissive portion of the mark, the contrast between the transmissive portion and the light shielding portion in the mark is high, so that the mark can be easily recognized, so that the mark can be easily detected during the second drawing. In addition, although the resist film 24 is formed in the light transmitting portion of the mark, the transmittance of the resist film with respect to the alignment light used for alignment is relatively high, so that a high contrast is obtained in relation to the light blocking portion of the mark formed in the light shielding film 22a. Lose.

After drawing, this is developed to form a resist pattern 24b in which the resist film is removed in the transmissive portion of the device pattern, and the resist film remains in other regions (see Fig. 1B (7)).

Next, using the formed resist pattern 24b as a mask, the semi-transmissive film 23 of the area | region used as the light transmission part of a device pattern is removed by dry etching. As a result, the semi-transmissive portion of the device pattern is partitioned from the transmissive portion to form the translucent portion (A (d) region) and the transmissive portion C (d) region of the device pattern (see FIG. 1B (8)).

The remaining resist pattern 24b is removed using oxygen ashing or the like.

The gray tone mask 20B of this embodiment is completed as mentioned above (refer FIG. 1B (9)). Also in the finally obtained gray tone mask 20B, the mark pattern portion is formed of a light shielding portion (B region shown) made of the light shielding film 22a and a light transmitting portion (C region shown) exposed by the transparent substrate 21. The contrast between the light-transmitting portion and the light-shielding portion in the mark pattern portion is high, and the mark can be easily detected when used for alignment with the transfer substrate when using the mask.

In this embodiment, the shielding plate is disposed so that the semi-transmissive film is not formed at least in the light projecting portion of the mark pattern, but at least the shielding tape or the shielding film (for example, a resist film) is attached to the light projecting portion of the mark pattern, After forming the translucent film, the shielding tape or the shielding film may be removed so that the translucent film is not formed at least on the light transmitting portion of the mark pattern.

(2nd Example)

FIG. 2 is a cross-sectional view schematically showing a second embodiment of the method for manufacturing a gray tone mask according to the present invention, in which part of the manufacturing process is sequentially.

In the present embodiment, the steps up to forming the predetermined light shielding film pattern 22a using the mask blank on which the light shielding film 22 is formed on the transparent substrate 21 are performed in FIG. 1A according to the first embodiment. Since it is exactly the same as the process of (1)-(4), it abbreviate | omits illustration and illustration here.

On the transparent substrate 21 obtained as mentioned above, the semi-transmissive film 23 is formed in the whole surface on the board | substrate which has the light shielding film pattern 22a (refer FIG. 2 (5)).

Next, the positive resist is applied to the entire surface and baked to form a resist film on the translucent film 23, and at least the light-transmitting portion C (m) region of the mark pattern is exposed to the resist film. Drawing and development are performed to form a resist pattern 24c (see Fig. 2 (6)). In addition, the margin may be set as shown in view of the positional deviation of the drawing in this case, and the area slightly larger than the light projecting portion (C (m) region) of the mark pattern may be exposed. Subsequently, the semi-transmissive film 23 formed on the transmissive portion of the mark pattern is etched away using the resist pattern 24c as a mask (see Fig. 2 (7)).

Next, after the remaining resist pattern 24c is removed, the positive resist is applied to the entire surface and baked to form a resist film 24 (see Fig. 2 (8)).

Then, the second device pattern drawing is performed. The drawing data at this time is pattern data corresponding to the light-transmitting portion (region C (d)) of the device pattern. The light-transmitting portion of the mark for positioning at the time of drawing is previously removed by etching the translucent film 23. Since the transflective film 23 does not exist, it is easy to recognize a mark and the mark detection at the time of drawing is easy. Also in this embodiment, a resist film 24 is formed in the light transmitting portion of the mark, but a high contrast is obtained in relation to the light blocking portion of the mark formed in the light shielding film 22a.

After drawing, this is developed to form a resist pattern 24b in which the resist film is removed in the light transmitting portion of the device pattern and the resist film remains in other regions (see Fig. 2 (9)).

Next, the semi-transmissive portion 23 of the device pattern is partitioned from the transmissive portion and semi-transmissive of the device pattern by removing by dry etching the semi-transmissive film 23 in the region to be the transmissive portion of the device pattern using the formed resist pattern 24b as a mask. A light portion A (d) region and a light transmitting portion C (d) region are formed (see FIG. 2 (10)).

The remaining resist pattern 24b is removed using oxygen ashing or the like.

The gray tone mask 20C of this embodiment is completed as mentioned above (refer FIG. 2 (11)). Also in the gray tone mask 20C of this obtained Example, the mark pattern part exposed by the light shielding part (region B shown) and the transparent substrate 21 which consist of the light shielding film 22a and the transflective film 23 on it is exposed. Since it is formed by a light transmitting portion (region C shown), the contrast between the transmitted light and the reflected light between the light transmitting portion and the light blocking portion in the mark pattern portion is high, and the mark is changed when the alignment with the transfer substrate is performed when the mask is used. It is easy to detect.

In the present embodiment, the semi-transmissive film 23 formed on the light-transmitting portion of the mark pattern is etched away using the resist pattern 24c as a mask, but partial processing by extraction with etching liquid or the like without forming the resist pattern 24c is performed. By removing the semi-transmissive film formed on the light transmitting portion of the mark pattern.

(Third Embodiment)

3 shows a third embodiment of a method for manufacturing a gray tone mask according to the present invention, and is a sectional view schematically showing a part of the manufacturing process in order.

Also in this embodiment, the steps up to forming the predetermined light shielding film pattern 22a using the mask blank on which the light shielding film 22 is formed on the transparent substrate 21 are performed in FIG. 1A according to the first embodiment. Since it is completely the same as the process of (1)-(4), it abbreviate | omits illustration and overlapping description here.

On the transparent substrate 21 obtained as mentioned above, the semi-transmissive film 23 is formed in the whole surface on the board | substrate which has the light shielding film pattern 22a (refer FIG. 3 (5)).

Next, the positive film is applied to the entire surface again to form the resist film 24 (see FIG. The resist film does not exist in the light transmitting portion in the mark pattern (see Fig. 3 (7)). In addition, in order to prevent the resist film 24 from being present in the light transmitting portion of the mark pattern, the resist film may be formed by applying at least the light transmitting portion region of the mark pattern. In addition, in this embodiment, in order to prevent the resist film 24 from being present at least in the light transmitting portion of the mark pattern, the resist film 24 may not be formed in the entire mark pattern including the light shielding portion as shown. Of course.

Subsequently, the semi-transmissive film 23 exposed to the mark pattern portion is etched away using the resist pattern 24d as a mask (see Fig. 3 (8)). As a result, at least the light transmitting portion in the mark pattern is in a state where the transparent substrate 21 is exposed.

Next, the second drawing is performed. The drawing data at this time is pattern data corresponding to the light transmitting portion (C (d) region) of the device pattern. In this drawing, the translucent film 23 does not exist by the etching removal of the translucent film 23 in the transmissive portion of the mark pattern for positioning, and thus the resist film does not exist. ) Is exposed. Therefore, a higher contrast between the light shielding portion and the light transmitting portion of the mark pattern is obtained, so that the mark can be more easily recognized, so that the mark detection becomes easier during the second drawing.

This is developed after drawing, and the resist film is removed in the light transmitting portion of the device pattern, and a resist pattern 24e in which the resist film remains in other regions of the device pattern is formed (see Fig. 3 (9)).

Next, the semi-transmissive portion 23 of the device pattern is separated from the transmissive portion by dry etching to remove the semi-transmissive film 23 in the region that becomes the light-transmitting portion of the device pattern by using the formed resist pattern 24e as a mask. Semi-transmissive portion A (d) region and transmissive portion C (d) region are formed (see FIG. 3 (10)). Further, at this time, since the light shielding film 22a in the mark pattern is exposed, a slight film reduction is expected, but there is no problem since a high contrast is still obtained.

The remaining resist pattern 24e is removed using oxygen ashing or the like.

The gray tone mask 20D of this embodiment is completed as mentioned above (refer FIG. 3 (11)). Also in the obtained gray tone mask 20D of this Example, the mark pattern part is formed by the light shielding part (region B shown) which consists of the light shielding film 22a, and the light transmission part (C region shown) which the transparent substrate 21 exposed. Therefore, the contrast between the light-transmitting portion and the light-shielding portion in the mark pattern portion is increased, so that the mark can be easily detected when the mask is used for alignment with the transfer substrate.

In addition, with reference to the third embodiment described above, also in the step of forming the resist film 24 for performing the second drawing in the above-described first embodiment (FIG. 1B (6)), the resist film (24) is formed on the entire surface, and then at least the resist film formed on the light-transmitting portion (C (m) region) of the mark pattern is removed or the resist film is formed by coating the light-excepting portion of the mark pattern except at least the mark pattern. Since the resist film can be prevented from being present in the light transmitting portion in, the contrast can be further increased at the time of mark detection.

Further, also in the step of forming the resist film 24 for performing the second device pattern drawing in the above-described second embodiment (Fig. 2 (8)), the resist film 24 is formed on the entire surface. By removing at least the resist film formed on the light-transmitting portion (C (m) region) of the mark pattern, or by forming a resist film except at least the light-transmitting region of the mark pattern, the resist film is not present in the light-transmitting portion of the mark pattern. Since this can be avoided, the contrast can be further increased at the time of mark detection.

In the third embodiment, the semi-transmissive film 23 exposed to the mark pattern portion is removed. However, even when the semi-transmissive film 23 is not removed, the resist film 24 is removed when the resist film 24 is removed. The contrast can be improved compared to the case where it is not removed.

The method of forming the device pattern portion is not limited to the embodiment described above, and for example, a resist pattern of a region corresponding to the light blocking portion and the light transmitting portion of the device pattern is formed on the mask blank by the first drawing, By etching the light-shielding film exposed using the resist pattern as a mask, the transparent substrate in the region corresponding to the semi-transmissive portion of the device pattern is exposed, and after removing the resist pattern, a semi-transmissive film is formed on the entire surface of the substrate, and the second drawing is performed. A resist pattern may be formed in a region corresponding to the light shielding portion and the semitransmissive portion, and the light transmitting portion and the light shielding portion may be formed by etching the semi-transmissive film and the light shielding film of the light transmitting portion exposed using the resist pattern as a mask.

In the above-described embodiment, a case where a positive resist is used is illustrated, but a negative resist may be used. In this case, only drawing data is reversed, and a process can be performed similarly to the above-mentioned content.

According to the manufacturing method of the gray tone mask of this invention, the pattern drawing for forming a resist pattern is performed twice, and the mark for aligning the position of two pattern drawing is made to the non-device pattern area | region of a mask at the time of 1st pattern formation. In the same manner as in the case of the normal pattern (device pattern), the alignment is performed based on the mark, and the second drawing is performed so that the translucent film does not exist in the light transmitting portion of the mark before the second drawing. The contrast is high, and the mark detection at the time of the second drawing is easy.

In addition, according to the method for manufacturing a gray tone mask of the present invention, a pattern drawing for forming a resist pattern is performed twice, and a non-device pattern region of the mask at the time of forming the mark for aligning the positions of the two pattern writings at the first pattern formation. In the same manner as in the normal pattern (device pattern), the alignment is performed on the basis of the mark and the second drawing is performed. The contrast is high, and the mark detection at the time of the second drawing is easy.

Further, according to the gray tone mask of the present invention, the light shielding portion is formed of a light shielding film provided on a transparent substrate and a semi-transmissive film laminated on a part or all thereon, the semi-transmissive portion is formed of a semi-transparent film, and the light transmitting portion is a transparent substrate. Difference in which at least the mark pattern of various marks, such as an alignment mark for use in alignment with a to-be-transferred substrate at the time of using a mask, formed in the non-device pattern area | region in the gray tone mask formed by the exposed part is formed from a light shielding film. Since the light portion and the transparent substrate are formed by the exposed light-transmitting portion, the contrast of the mark at the time of mark detection is high and the detection is easy.

Claims (7)

In the manufacturing method of the gray-tone mask for liquid crystal display device manufacture in which the device pattern which has a light shielding part, a light transmission part, and a semi-transmissive part, and the mark pattern used for alignment are formed, Preparing a mask blank having at least a light shielding film formed on the transparent substrate; And drawing a first drawing pattern on the first resist film for forming the light blocking portion pattern and developing the same, forming a first resist pattern, and etching the light blocking film using the first resist pattern as a mask. Pattern forming step, Forming a transflective film on the transparent substrate on which the light shielding portion pattern is formed; In order to form a semi-transmissive portion pattern, a second drawing pattern is drawn and developed on a second resist film formed on the semi-transmissive film to form a second resist pattern, and the semi-reflective pattern is formed using the second resist pattern as a mask. Having a semi-transmissive portion pattern forming step having the step of etching the light-transmitting film, In the shading part pattern forming step, a desired mark pattern having a shading part and a light transmitting part is formed together with shading of the shading part pattern, Before drawing of the 2nd drawing pattern in the said semi-transmissive part pattern formation step, it has a step which makes a translucent film not exist in the light-transmitting part in the said mark pattern, The said mark pattern is detected when drawing the said 2nd drawing pattern, The manufacturing method of the gray tone mask for liquid crystal display device manufacture characterized by the above-mentioned. The method of claim 1, wherein the semi-transmissive layer does not exist in the transmissive portion of the mark pattern, in the forming of the semi-transmissive layer, forming the film except for the translucent portion of the mark pattern. The manufacturing method of the gray tone mask for liquid crystal display device manufacture characterized by the above-mentioned. The method of claim 1, wherein the step of preventing the translucent film from being present in the transmissive portion of the mark pattern is a step of removing at least the translucent film from the transmissive portion of the mark pattern after forming the translucent film. The manufacturing method of the gray tone mask for liquid crystal display device manufacture which is carried out. The method according to any one of claims 1 to 3, wherein before the writing of the second drawing pattern in the semi-transmissive part pattern forming step, the second resist film is not present in the light transmitting part in the mark pattern. And after forming the second resist film, at least the second resist film in the light-transmitting portion of the mark pattern is removed. In the manufacturing method of the gray-tone mask for liquid crystal display device manufacture in which the device pattern which has a light shielding part, a light transmission part, and a semi-transmissive part, and the mark pattern used for alignment are formed, Preparing a mask blank having at least a light shielding film formed on the transparent substrate; And drawing a first drawing pattern on the first resist film for forming the light blocking portion pattern and developing the same, forming a first resist pattern, and etching the light blocking film using the first resist pattern as a mask. Pattern forming step, Forming a transflective film on the transparent substrate on which the light shielding portion pattern is formed; In order to form a semi-transmissive portion pattern, a second drawing pattern is drawn and developed on a second resist film formed on the semi-transmissive film to form a second resist pattern, and the semi-reflective pattern is formed using the second resist pattern as a mask. It has a semi-transmissive pattern forming step comprising the step of etching the light-transmitting film, In the shading part pattern forming step, a desired mark pattern having a shading part and a light transmitting part is formed together with shading of the shading part pattern, At least at least at the light-transmitting portion of the mark pattern after the formation of the second resist film so that the second resist film does not exist in the light-transmitting portion in the mark pattern before the second drawing pattern is drawn in the semi-transmissive portion pattern forming step. 2 remove the resist film, The said mark pattern is detected when drawing the said 2nd drawing pattern, The manufacturing method of the gray tone mask for liquid crystal display device manufacture characterized by the above-mentioned. delete delete

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