TW201823855A - Method of manufacturing a photomask, photomask, and method of manufacturing a display device - Google Patents

Method of manufacturing a photomask, photomask, and method of manufacturing a display device Download PDF

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Publication number
TW201823855A
TW201823855A TW106101967A TW106101967A TW201823855A TW 201823855 A TW201823855 A TW 201823855A TW 106101967 A TW106101967 A TW 106101967A TW 106101967 A TW106101967 A TW 106101967A TW 201823855 A TW201823855 A TW 201823855A
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Taiwan
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optical film
manufacturing
film
transmission control
display device
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TW106101967A
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Chinese (zh)
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金台勳
李錫薰
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日商Ｈｏｙａ股份有限公司
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Publication of TW201823855A publication Critical patent/TW201823855A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

To realize a photomask which is for use in manufacturing a display device and which is exactly as designed and takes advantages of optical characteristics of individual films without changing them. This invention provides a method of manufacturing a photomask which is for use in manufacturing a display device and which has a transfer pattern including a light transmitting portion, a first light transmission control portion, and a second light transmission control portion. The method includes a step of preparing a photomask blank provided with a first optical film and a first resist film and thereafter carrying out first lithography on the first resist film to form a first resist pattern; a step of etching only the first optical film by using the first resist pattern to form a first optical film pattern, a step of forming a second optical film on a transparent substrate, thereafter forming a second resist film on the second optical film, and carrying out second lithography to form a second resist pattern, and a step of etching only the second optical film by using the second resist pattern to form a second optical film pattern. The second resist pattern has a size to cover a region where the second light transmission control portion is to be formed, with the addition of a margin of a predetermined width on a side of the first light transmission control portion adjacent to an edge of the second light transmission control portion.

Description

光罩之製造方法、光罩、及顯示裝置之製造方法Photomask manufacturing method, photomask, and display device manufacturing method

本發明係關於一種用以製造電子器件之光罩，尤其關於一種對以液晶面板或有機EL(Electroluminescence，電致發光)面板為代表之顯示裝置(平板顯示器)之製造有用之光罩及其製造方法、以及使用該光罩之顯示裝置之製造方法。The present invention relates to a photomask used for manufacturing electronic devices, and in particular, to a photomask useful for the manufacture of a display device (flat panel display) represented by a liquid crystal panel or an organic EL (Electroluminescence) panel and a manufacturing method thereof Method and manufacturing method of display device using the photomask.

專利文獻1中記載有關於一種多階光罩之技術，該多階光罩係於透明基板上形成有具有遮光部、半透光部及透光部之轉印用圖案者，且可將具有急遽上升之形狀之抗蝕圖案形成於被轉印體上。 圖6係表示專利文獻1中記載之多階光罩之構成之側剖圖。 該多階光罩200包括具有遮光部110、半透光部115及透光部120之轉印用圖案。遮光部110係於透明基板100上將半透光膜101、相位偏移調整膜102及遮光膜103依序積層而成。半透光部115係於透明基板100上形成半透光膜101而成。透光部120係露出有透明基板100。於遮光部110與透光部120之邊界，形成有半透光膜101上之相位偏移調整膜102局部地露出之第1相位偏移部111，且於遮光部110與半透光部115之邊界，形成有半透光膜101上之相位偏移調整膜102局部地露出之第2相位偏移部112。 於上述多階光罩200中，透過透光部120之曝光之光與透過第1相位偏移部111之曝光之光進行干擾，並且透過半透光部115之曝光之光與透過第2相位偏移部112之曝光之光進行干擾。藉此，邊界部分之曝光之光相互抵消。因此，可使形成於被轉印體上之抗蝕圖案之側壁成為急遽上升之形狀。 圖7係表示專利文獻1中記載之多階光罩之製造步驟之側剖圖。 (光罩基底準備步驟) 首先，準備於透明基板100上依序形成有半透光膜101、相位偏移調整膜102、遮光膜103，且於最上層形成有第1抗蝕膜104之光罩基底20(圖7(a))。 (第1抗蝕圖案形成步驟) 繼而，對光罩基底20實施繪圖、顯影，形成將遮光部110(圖6)之形成區域覆蓋之第1抗蝕圖案104p。 (第1蝕刻步驟) 繼而，以第1抗蝕圖案104p為遮罩，蝕刻遮光膜103，形成遮光膜圖案103p(圖7(b))。 (第2抗蝕膜形成步驟) 繼而，將第1抗蝕圖案104p去除後，於具有遮光膜圖案103p及露出之相位偏移調整膜102之光罩基底20上之整面，形成第2抗蝕膜105。 (第2抗蝕圖案形成步驟) 繼而，將第2抗蝕膜105進行繪圖、顯影，形成將遮光部110之形成區域、位於遮光部110與透光部120之邊界部分之第1相位偏移部111之形成區域、及位於遮光部110與半透光部115之邊界部分之第2相位偏移部112之形成區域分別覆蓋的第2抗蝕圖案105p(圖6、圖7(c))。 (第2蝕刻步驟) 繼而，以第2抗蝕圖案105p為遮罩，蝕刻相位偏移調整膜102，形成相位偏移調整膜圖案102p，並且形成半透光部115、第1相位偏移部111及第2相位偏移部112(圖6、圖7(d))。 (第3抗蝕膜形成步驟) 繼而，將第2抗蝕圖案105p去除後，於具有遮光膜圖案103p、相位偏移調整膜圖案102p、露出之半透光膜101之光罩基底20上之整面，形成第3抗蝕膜106。 (第3抗蝕圖案形成步驟) 繼而，將第3抗蝕膜106進行繪圖、顯影，形成將透光部120之形成區域以外之區域覆蓋之第3抗蝕圖案106p(圖7(e))。 (第3蝕刻步驟) 繼而，以第3抗蝕圖案106p為遮罩，蝕刻半透光膜101，形成半透光膜圖案101p，並且使透明基板100局部地露出，形成透光部120(圖6、圖7(f))。 (第3抗蝕圖案去除步驟) 繼而，去除第3抗蝕圖案106p，完成多階光罩200之製造(圖7(g))。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2011-215614號公報Patent Document 1 describes a technology of a multi-step mask, which is formed on a transparent substrate with a transfer pattern having a light-shielding portion, a translucent portion, and a light-transmitting portion. A sharply-shaped resist pattern is formed on the object to be transferred. FIG. 6 is a side cross-sectional view showing a configuration of a multi-step mask described in Patent Document 1. FIG. The multi-step mask 200 includes a transfer pattern having a light-shielding portion 110, a semi-light-transmitting portion 115, and a light-transmitting portion 120. The light-shielding portion 110 is formed by sequentially stacking a semi-transmissive film 101, a phase shift adjustment film 102, and a light-shielding film 103 on a transparent substrate 100. The translucent portion 115 is formed by forming a translucent film 101 on the transparent substrate 100. The transparent portion 120 is exposed on the transparent substrate 100. At the boundary between the light-shielding portion 110 and the light-transmitting portion 120, a first phase-shifting portion 111 partially exposed by the phase-shift adjustment film 102 on the translucent film 101 is formed. A boundary is formed with a second phase shift portion 112 where the phase shift adjustment film 102 on the translucent film 101 is partially exposed. In the above-described multi-step mask 200, the light transmitted through the light transmitting portion 120 and the light transmitted through the first phase shifting portion 111 interfere with each other, and the light transmitted through the light transmitting portion 115 and the second phase are transmitted. The exposure light of the offset portion 112 interferes. Thereby, the exposure light of the boundary portion cancels each other. Therefore, the side wall of the resist pattern formed on the to-be-transferred body can be made into a shape which sharply rises. FIG. 7 is a side sectional view showing the manufacturing steps of the multi-step mask described in Patent Document 1. FIG. (Photomask base preparation step) First, a light transmissive film 101, a phase shift adjustment film 102, and a light-shielding film 103 are sequentially formed on a transparent substrate 100, and light of a first resist film 104 is formed on the uppermost layer. The cover base 20 (FIG. 7 (a)). (First resist pattern forming step) Subsequently, the mask base 20 is subjected to drawing and development to form a first resist pattern 104p that covers the formation area of the light shielding portion 110 (FIG. 6). (First Etching Step) Next, using the first resist pattern 104p as a mask, the light-shielding film 103 is etched to form a light-shielding film pattern 103p (FIG. 7 (b)). (Second resist film formation step) After removing the first resist pattern 104p, a second resist is formed on the entire surface of the mask base 20 having the light shielding film pattern 103p and the exposed phase shift adjustment film 102. Etch film 105. (Second Resist Pattern Forming Step) Next, the second resist film 105 is drawn and developed to form a first phase shift in which a light-shielding portion 110 is formed and a boundary portion between the light-shielding portion 110 and the light-transmitting portion 120 is formed. The second resist pattern 105p covered by the formation area of the portion 111 and the formation area of the second phase shift portion 112 at the boundary portion between the light-shielding portion 110 and the translucent portion 115 (FIG. 6, FIG. 7 (c)) . (Second Etching Step) Next, using the second resist pattern 105p as a mask, the phase shift adjustment film 102 is etched to form a phase shift adjustment film pattern 102p, and a translucent portion 115 and a first phase shift portion are formed. 111 and the second phase shift section 112 (FIG. 6, FIG. 7 (d)). (Third resist film forming step) Next, after removing the second resist pattern 105p, it is applied to a mask substrate 20 having a light-shielding film pattern 103p, a phase shift adjustment film pattern 102p, and an exposed translucent film 101. A third resist film 106 is formed on the entire surface. (Third resist pattern forming step) Next, the third resist film 106 is patterned and developed to form a third resist pattern 106p that covers an area other than the area where the light transmitting portion 120 is formed (FIG. 7 (e)) . (Third Etching Step) Next, using the third resist pattern 106p as a mask, the semi-transparent film 101 is etched to form a semi-transparent film pattern 101p, and the transparent substrate 100 is partially exposed to form a transparent portion 120 (FIG. 6. Fig. 7 (f)). (Third Resist Pattern Removal Step) Next, the third resist pattern 106p is removed to complete the manufacture of the multi-step mask 200 (FIG. 7 (g)). [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2011-215614

[發明所欲解決之問題] 多階光罩(或灰階遮罩)之轉印用圖案係具有遮光部、透光部及半透光部等透光率不同之3個以上之部分，藉此，將複數個具有殘餘膜厚之抗蝕圖案形成於被轉印體上。該抗蝕圖案係於形成於被轉印體上之薄膜之加工時用作蝕刻遮罩。於該情形時，使用抗蝕圖案進行第1蝕刻，繼而，將抗蝕圖案進行減膜，減膜後之抗蝕圖案成為與第1蝕刻時不同之形狀。因此，可利用與第1蝕刻時不同形狀之抗蝕圖案進行第2蝕刻。如此，多階光罩亦可稱為具有相當於複數片光罩之功能之光罩，且主要作為可減少顯示裝置之製造所需之光罩之片數者，有助於生產效率之提昇。 上述專利文獻1中記載之多階光罩包括不僅具有露出透明基板之透光部、使用遮光膜之遮光部，而且具有使用使曝光之光一部分透過之半透光膜之半透光部的轉印用圖案。因此，例如可藉由適當控制半透光部之透光率，而控制形成於被轉印體上之抗蝕圖案之局部厚度。進而，上述專利文獻1之多階光罩係意圖藉由包括相位偏移部，而利用與和相位偏移部相鄰之透光部或半透光部之邊界處之光之干擾效應，而控制形成於被轉印體上之光強度分佈，抑制所形成之抗蝕圖案之側壁之傾斜。若使用此種光罩，則於欲獲得之器件(顯示器面板等)之製造步驟中，不僅可期待上述生產效率之提昇，而且可期待CD(Critical dimension，臨界尺寸)精度或生產良率之提昇，從而可獲得有利之製造條件。 且說，如圖6中所說明，專利文獻1中記載之多階光罩200係藉由半透光膜101與相位偏移調整膜102之積層而形成相位偏移部111、112。根據該方法，必須按照半透光部115所要求之透光率決定半透光膜101之材料或膜厚，進而，藉由適當選擇積層於該半透光膜101上之相位偏移調整膜102之原材料或膜厚，而達成相位偏移部111、112所要求之透光率或相位偏移量。然而，此種光罩材料之選擇及設計並非易事。 例如於根據半透光部115所要求之透光率，決定半透光膜101之原材料及膜厚之情形時，必須搜尋如可藉由積層於該半透光膜101上而達成適當之光學特性(透光率、相位偏移量)般之相位偏移調整膜102。但因各個膜之透光率及相位偏移量均隨膜厚而變動，故無法分別獨立地控制該等2個光學特性。即，準備以單層之半透光膜101實現具有所需之透光率之半透光部115，進而，藉由該半透光膜101與相位偏移調整膜102之積層而獲得所需之透光率及相位偏移量之膜材料需要較大之開發負擔。不僅如此，半透光部115所要求之透光率係因遮罩使用者所適用之製程或所欲獲得之製品而異，從而必須準備較多之變化。因此，用以藉由單膜與積層膜之同時使用而準確獲得光罩之各規格之設計有時可能產生無法使用之情形。 因同時使用單膜與積層膜而產生之上述異常係不限於相位偏移遮罩，且即便於使用2個半透光膜且具有透光率不同之第1、第2半透光部之多階光罩中亦同樣可能產生之問題。 本發明之目的在於提供一種可將各個膜所具有之光學特性直接活用作光罩之各部分之特性之顯示裝置製造用光罩之製造方法、顯示裝置製造用光罩、及顯示裝置之製造方法。 [解決問題之技術手段] (第1態樣) 本發明之第1態樣係一種顯示裝置製造用光罩之製造方法，其特徵在於： 該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，且上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括： 準備於上述透明基板上形成有上述第1光學膜及第1抗蝕膜之光罩基底之步驟； 對上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案之第1抗蝕圖案形成步驟； 以上述第1抗蝕圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案之第1圖案化步驟； 於包括上述第1光學膜圖案之上述透明基板上形成上述第2光學膜之步驟； 於上述第2光學膜上形成第2抗蝕膜，且進行第2繪圖，形成第2抗蝕圖案之第2抗蝕圖案形成步驟；及 以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案之第2圖案化步驟； 於上述第1圖案化步驟中，僅蝕刻上述第1光學膜， 於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且， 上述第2抗蝕圖案覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側，具有已增加特定寬度之邊際之尺寸。 (第2態樣) 本發明之第2態樣係上述第1態樣中記載之顯示裝置製造用光罩之製造方法，其特徵在於： 上述第1光學膜包含Cr，且 上述第2光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者。 (第3態樣) 本發明之第3態樣係一種顯示裝置製造用光罩之製造方法，其特徵在於： 該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括： 準備於上述透明基板上形成有上述第1光學膜、蝕刻遮罩膜、及第1抗蝕膜之光罩基底之步驟； 對上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案之第1抗蝕圖案形成步驟； 以上述第1抗蝕圖案為遮罩，蝕刻上述蝕刻遮罩膜，形成蝕刻遮罩膜圖案之步驟； 以上述蝕刻遮罩膜圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案之第1圖案化步驟； 將上述蝕刻遮罩膜圖案去除之步驟； 於包括上述第1光學膜圖案之上述透明基板上形成上述第2光學膜之步驟； 於上述第2光學膜上形成第2抗蝕膜，且進行第2繪圖，形成第2抗蝕圖案之第2抗蝕圖案形成步驟；及 以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案之第2圖案化步驟； 於上述第1圖案化步驟中，僅蝕刻上述第1光學膜， 於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且， 上述第2抗蝕圖案覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側，具有已增加特定寬度之邊際之尺寸。 (第4態樣) 本發明之第4態樣係上述第3態樣中記載之顯示裝置製造用光罩之製造方法，其特徵在於： 上述第1光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者，且 上述第2光學膜包含Cr。 (第5態樣) 本發明之第5態樣係上述第1至第4態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於： 上述第1光學膜與上述第2光學膜對於彼此之蝕刻劑具有耐受性。 (第6態樣) 本發明之第6態樣係上述第1至第5態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於： 於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T1(%)，相位偏移量設為1(度)時， 2≦T1≦10 150≦1≦210。 (第7態樣) 本發明之第7態樣係上述第1至第6態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於： 於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T2(%)，相位偏移量設為2(度)時， 10≦T2≦60 0＜2≦90。 (第8態樣) 本發明之第8態樣係上述第1至第7態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於： 於將上述邊際區域之寬度設為M1(μm)時， 0.2≦M1≦1.0。 (第9態樣) 本發明之第9態樣係上述第1至第8態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於： 上述第1透過控制部之邊際區域與上述第2透過控制部對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的相位差δ(度)為 150≦δ≦210。 (第10態樣) 本發明之第10態樣係上述第1至第9態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於： 上述轉印用圖案包括自對向之兩方向由上述第1透過控制部夾持之第2透過控制部，且 上述第2抗蝕圖案覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之2個上述第1透過控制部側，具有已增加特定寬度之邊際之尺寸。 (第11態樣) 本發明之第11態樣係一種顯示裝置製造用光罩，其包括具有於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之透光部、第1透過控制部及第2透過控制部之轉印用圖案， 上述轉印用圖案包括上述透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部， 上述透光部係露出有上述透明基板之表面， 於上述第1透過控制部，於上述透明基板上形成上述第1光學膜， 於上述第2透過控制部，於上述透明基板上形成上述第2光學膜， 上述第1透過控制部係於沿與上述第2透過控制部相鄰之邊緣之特定寬度之部分，具有上述第1光學膜與上述第2光學膜進行積層之特定寬度之邊際區域，並且於上述邊際區域以外之部分，具有僅形成有上述第1光學膜之主區域。 (第12態樣) 本發明之第12態樣係上述第11態樣中記載之顯示裝置製造用光罩，其特徵在於： 上述第1光學膜包含Cr，且 上述第2光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者。 (第13態樣) 本發明之第13態樣係上述第11態樣中記載之顯示裝置製造用光罩，其特徵在於： 上述第1光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者，且 上述第2光學膜包含Cr。 (第14態樣) 本發明之第14態樣係上述第11至第13態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於： 上述第1光學膜與上述第2光學膜對於彼此之蝕刻劑具有耐受性。 (第15態樣) 本發明之第15態樣係上述第11至第14態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於： 於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T1(%)，相位偏移量設為1(度)時， 2≦T1≦10 150≦1≦210。 (第16態樣) 本發明之第16態樣係上述第11至第15態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於： 於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T2(%)，相位偏移量設為2(度)時， 10≦T2≦60 0＜2≦90。 (第17態樣) 本發明之第17態樣係上述第11至第16態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於： 於將上述邊際區域之寬度設為M1(μm)時， 0.2≦M1≦1.0。 (第18態樣) 本發明之第18態樣係上述第11至第17態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於： 上述第1透過控制部之邊際區域與上述第2透過控制部對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的相位差δ(度)為 150≦δ≦210。 (第19態樣) 本發明之第19態樣係上述第11至第18態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於： 上述轉印用圖案包括自對向之兩方向由上述第1透過控制部夾持之第2透過控制部，且於上述第1透過控制部與上述第2透過控制部各自之相鄰部分中之上述第1透過控制部側，形成有上述邊際區域。 (第20態樣) 本發明之第20態樣係一種顯示裝置之製造方法，其特徵在於包括以下步驟： 準備利用上述第1至第10態樣中任一者中記載之製造方法製造之顯示裝置製造用光罩、或上述第11至第19態樣中任一者中記載之顯示裝置製造用光罩；及 藉由曝光裝置將上述顯示裝置製造用光罩所具有之轉印用圖案曝光。 [發明之效果] 根據本發明，因可將各個膜所具有之光學特性直接活用作光罩之各部分之特性，故可實現一種設計自由度較大且忠實地發揮符合設計之特性之顯示裝置製造用光罩。[Problems to be Solved by the Invention] The transfer pattern of the multi-step mask (or gray-scale mask) has three or more parts with different transmittances such as a light-shielding portion, a light-transmitting portion, and a semi-light-transmitting portion. Then, a plurality of resist patterns having a residual film thickness are formed on the object to be transferred. This resist pattern is used as an etching mask during processing of a thin film formed on a transferee. In this case, the first etching is performed using the resist pattern, and then the resist pattern is reduced, and the resist pattern after the reduction is different from the shape during the first etching. Therefore, the second etching can be performed using a resist pattern having a different shape from that in the first etching. In this way, the multi-level mask can also be called a mask having a function equivalent to a plurality of masks, and is mainly used to reduce the number of masks required for the manufacture of a display device, which contributes to the improvement of production efficiency. The multi-step mask described in the above-mentioned Patent Document 1 includes not only a light-transmitting portion exposing a transparent substrate, a light-shielding portion using a light-shielding film, but also a light-transmitting portion using a semi-light-transmitting film that partially transmits the exposed light. Printing pattern. Therefore, for example, it is possible to control the local thickness of the resist pattern formed on the object to be transferred by appropriately controlling the light transmittance of the semi-transmissive portion. Furthermore, the multi-step mask of the above-mentioned Patent Document 1 is intended to include a phase shifting portion, and to utilize an interference effect of light at a boundary between a light transmitting portion or a semi-light transmitting portion adjacent to the phase shifting portion, and The light intensity distribution formed on the object to be transferred is controlled, and the inclination of the sidewall of the resist pattern formed is suppressed. If such a photomask is used, in the manufacturing steps of the device (display panel, etc.) to be obtained, not only the above-mentioned improvement in production efficiency can be expected, but also the improvement of CD (Critical dimension) accuracy or production yield can be expected. So as to obtain favorable manufacturing conditions. In addition, as illustrated in FIG. 6, the multi-step mask 200 described in Patent Document 1 forms the phase shift sections 111 and 112 by laminating a translucent film 101 and a phase shift adjustment film 102. According to this method, the material or film thickness of the translucent film 101 must be determined according to the transmittance required by the translucent portion 115, and the phase shift adjustment film laminated on the translucent film 101 must be appropriately selected The material or film thickness of 102 achieves the transmittance or phase shift amount required by the phase shift sections 111 and 112. However, the selection and design of such mask materials is not easy. For example, when determining the raw material and film thickness of the semi-transparent film 101 according to the transmittance required by the semi-transmissive section 115, it is necessary to search, for example, by stacking the semi-transparent film 101 to achieve the appropriate optical The phase shift adjustment film 102 having characteristics (transmittance, phase shift amount). However, since the light transmittance and phase shift amount of each film change with the film thickness, the two optical characteristics cannot be controlled independently. That is, a semi-transparent film 101 with a single layer is prepared to realize a semi-transmissive portion 115 having a desired light transmittance, and further, a required layer is obtained by laminating the semi-transparent film 101 and the phase shift adjustment film 102 to obtain a desired The film material of light transmittance and phase shift requires a large development burden. Not only that, the required light transmittance of the semi-transmissive portion 115 varies depending on the manufacturing process applicable to the mask user or the desired product, so more changes must be prepared. Therefore, the design for accurately obtaining the specifications of the photomask by using the single film and the laminated film at the same time may sometimes cause unusability. The above-mentioned abnormality caused by the simultaneous use of a single film and a laminated film is not limited to a phase shift mask, and even if two semi-transmissive films are used and the first and second semi-transmissive portions with different transmittances are different Problems may also arise in step masks. An object of the present invention is to provide a method for manufacturing a display device for manufacturing a display device, a method for manufacturing a display device, and a method for manufacturing a display device that can directly utilize the optical characteristics of each film as the characteristics of each part of the mask. . [Technical means for solving the problem] (First aspect) A first aspect of the present invention is a method for manufacturing a photomask for display device manufacturing, characterized in that the photomask for display device manufacturing includes a transparent substrate A transfer pattern formed by patterning an optical film and a second optical film separately, and the transfer pattern includes a light-transmitting portion exposing a surface of the transparent substrate, and a first portion having a portion adjacent to the light-transmitting portion A transmission control unit, and a second transmission control unit having a portion adjacent to the first transmission control unit; the first transmission control unit includes the first optical film formed on the transparent substrate; and The transmission control unit includes the second optical film formed on the transparent substrate, and a method for manufacturing the photomask for manufacturing a display device includes: preparing a film on which the first optical film and the first resist film are formed on the transparent substrate; Step of photomask base; first drawing of first resist film to form first resist pattern; first resist pattern forming step of etching the first optical film with the first resist pattern as a mask ,form 1 a first patterning step of an optical film pattern; a step of forming the second optical film on the transparent substrate including the first optical film pattern; forming a second resist film on the second optical film, and performing the first 2 drawing, a second resist pattern forming step of forming a second resist pattern; and using the second resist pattern as a mask, etching the second optical film to form a second patterning step of the second optical film pattern; In the first patterning step, only the first optical film is etched. In the second patterning step, only the second optical film is etched, and the second resist pattern covers the second transmission control section. A region is formed, and the side of the first transmission control part adjacent to the edge of the second transmission control part has a size that has a margin increased by a specific width. (Second aspect) The second aspect of the present invention is a method for manufacturing a mask for manufacturing a display device according to the first aspect, wherein the first optical film includes Cr, and the second optical film Including any of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf. (Third aspect) A third aspect of the present invention relates to a method for manufacturing a mask for manufacturing a display device, characterized in that the mask for manufacturing a display device includes a first optical film and a second optical film on a transparent substrate. A transfer pattern formed by patterning each of the films, the transfer pattern includes a light-transmitting portion exposing a surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and A second transmission control portion adjacent to the first transmission control portion includes the first optical film formed on the transparent substrate in the first transmission control portion, and has a transparent portion formed in the second transmission control portion. The above-mentioned second optical film on a substrate, and a manufacturing method of the photomask for manufacturing the display device includes: preparing a photomask on which the first optical film, an etching mask film, and a first resist film are formed on the transparent substrate. A substrate step; first drawing the first resist film to form a first resist pattern; forming a first resist pattern; using the first resist pattern as a mask, etching the etching mask film to form Etch mask A step of film pattern; a first patterning step of etching the first optical film to form the first optical film pattern using the etching mask film pattern as a mask; a step of removing the etching mask film pattern; including the above A step of forming the second optical film on the transparent substrate of the first optical film pattern; forming a second resist film on the second optical film, and performing a second drawing to form a second resist of the second resist pattern A patterning step; and a second patterning step of etching the second optical film to form a second optical film pattern using the second resist pattern as a mask; and in the first patterning step, only the first patterning step is etched In the second patterning step, the optical film is only etched by the second optical film, and the second resist pattern covers a formation area of the second transmission control portion, and is located at an edge of the second transmission control portion. Adjacent to the first transmission control unit side, the size has a margin with a specific width increased. (Fourth aspect) The fourth aspect of the present invention is a method for manufacturing a photomask for manufacturing a display device described in the third aspect, wherein the first optical film includes Si, Mo, Ni, Ta, Any of Zr, Al, Ti, Nb, and Hf, and the second optical film includes Cr. (Fifth aspect) The fifth aspect of the present invention is a method for manufacturing a photomask for manufacturing a display device according to any one of the first to fourth aspects, characterized in that the first optical film and the The second optical film is resistant to each other's etchant. (Sixth aspect) The sixth aspect of the present invention is a method for manufacturing a photomask for manufacturing a display device according to any one of the first to fifth aspects, characterized in that the first optical film is The light transmittance of the representative wavelength light of the exposure light used in the exposure of the above-mentioned mask for manufacturing a display device is set to T1 (%), and the phase shift amount is set to 1 (degrees), 2 ≦ T1 ≦ 10 150 ≦ 1 ≦ 210. (Seventh aspect) The seventh aspect of the present invention is a method for manufacturing a mask for manufacturing a display device according to any one of the first to sixth aspects, characterized in that the second optical film is The light transmittance of the representative wavelength light of the exposure light used in the exposure of the above-mentioned mask for manufacturing a display device is set to T2 (%), and the phase shift amount is set to 2 (degrees), 10 ≦ T2 ≦ 60 0 < 2 ≦ 90. (Eighth aspect) The eighth aspect of the present invention is a method for manufacturing a mask for manufacturing a display device described in any one of the first to seventh aspects, and is characterized in that the width of the marginal region is When M1 (μm) is set, 0.2 ≦ M1 ≦ 1.0. (Ninth aspect) The ninth aspect of the present invention is a method for manufacturing a photomask for manufacturing a display device described in any one of the first to eighth aspects, characterized in that: the first transmission control unit The phase difference δ (degrees) between the marginal region and the representative wavelength light of the exposure light used in the exposure of the mask for manufacturing the display device by the second transmission control unit is 150 ≦ δ ≦ 210. (Tenth aspect) The tenth aspect of the present invention is a method for manufacturing a mask for manufacturing a display device according to any one of the first to ninth aspects, wherein the pattern for transfer includes The second transmission control section sandwiched by the first transmission control section in two opposite directions, and the second resist pattern covers the formation area of the second transmission control section, and is located at the edge of the second transmission control section. The two adjacent first transmission control units have a margin with a specific width increased. (Eleventh aspect) An eleventh aspect of the present invention is a photomask for manufacturing a display device, which includes a light-transmitting portion formed by patterning a first optical film and a second optical film on a transparent substrate, and 1 a transmission control section and a second transmission control section for a transfer pattern, the transfer pattern includes the light transmitting section, a first transmission control section having a portion adjacent to the light transmitting section, and a first transmission control section having the first transmission control section In the second transmission control portion adjacent to the transmission control portion, the transparent portion exposes the surface of the transparent substrate, and the first transmission control portion forms the first optical film on the transparent substrate. 2 A transmission control unit for forming the second optical film on the transparent substrate. The first transmission control unit is a part of a specific width along an edge adjacent to the second transmission control unit, and has the first optical film and The second optical film is laminated with a marginal region of a specific width, and a portion other than the marginal region has a main region in which only the first optical film is formed. (Twelfth aspect) The twelfth aspect of the present invention is the photomask for manufacturing a display device described in the eleventh aspect, wherein the first optical film includes Cr, and the second optical film includes Si, Any of Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf. (Thirteenth aspect) The thirteenth aspect of the present invention is a mask for manufacturing a display device according to the eleventh aspect, wherein the first optical film includes Si, Mo, Ni, Ta, Zr, Al , Ti, Nb, Hf, and the second optical film contains Cr. (14th aspect) The 14th aspect of the present invention is the photomask for manufacturing a display device according to any one of the 11th to 13th aspects, wherein the first optical film and the second optical The films are resistant to each other's etchant. (Fifteenth aspect) The fifteenth aspect of the present invention is the photomask for manufacturing a display device described in any one of the eleventh to fourteenth aspects, wherein the first optical film is adapted to the display. The light transmittance of the representative wavelength light used for the exposure light used in the exposure of the device manufacturing mask is set to T1 (%), and the phase shift amount is set to 1 (degrees), 2 ≦ T1 ≦ 10 150 ≦ 1 ≦ 210. (16th aspect) The sixteenth aspect of the present invention is the photomask for manufacturing a display device described in any one of the eleventh to fifteenth aspects, wherein the second optical film is adapted to the display. The light transmittance of the representative wavelength light used for the exposure light used in the exposure of the device manufacturing mask is set to T2 (%), and the phase shift amount is set to 2 (degrees), 10 ≦ T2 ≦ 60 0 < 2 ≦ 90. (17th aspect) The 17th aspect of the present invention is the photomask for manufacturing a display device described in any one of the 11th to 16th aspects, wherein the width of the marginal region is M1. (μm), 0.2 ≦ M1 ≦ 1.0. (18th aspect) The eighteenth aspect of the present invention is the photomask for manufacturing a display device described in any one of the eleventh to seventeenth aspects, wherein the marginal area of the first transmission control unit and the The phase difference δ (degrees) of the second wavelength control unit with respect to the representative wavelength light of the exposure light used in the exposure of the mask for manufacturing the display device is 150 ≦ δ ≦ 210. (Nineteenth aspect) The nineteenth aspect of the present invention is the photomask for manufacturing a display device described in any one of the eleventh to eighteenth aspects, wherein the transfer pattern includes a self-aligning pattern. A second transmission control portion sandwiched by the first transmission control portion in both directions is formed on the first transmission control portion side of each of the adjacent portions of the first transmission control portion and the second transmission control portion. The above marginal area. (Twenty aspect) The twentieth aspect of the present invention is a method for manufacturing a display device, which is characterized by including the following steps: preparing a display manufactured using the manufacturing method described in any one of the first to tenth aspects described above. Photomask for device manufacturing, or the photomask for display device manufacturing described in any one of the 11th to 19th aspects; and exposing the pattern for transfer of the photomask for display device manufacturing by an exposure device . [Effects of the Invention] According to the present invention, since the optical characteristics of each film can be directly used as the characteristics of each part of the photomask, a display device having a large degree of design freedom and faithfully exerting the characteristics in accordance with the design can be realized Manufacturing photomask.

以下，一面參照圖式，一面對本發明之實施形態詳細地進行說明。 ＜第1實施形態之顯示裝置製造用光罩之製造方法＞ 本發明之第1實施形態之顯示裝置製造用光罩之製造方法如下所述。 一種顯示裝置製造用光罩之製造方法，其特徵在於：該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，且上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括： 準備於上述透明基板上形成有上述第1光學膜及第1抗蝕膜之光罩基底之步驟； 對上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案之第1抗蝕圖案形成步驟； 以上述第1抗蝕圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案之第1圖案化步驟； 於包括上述第1光學膜圖案之上述透明基板上形成上述第2光學膜之步驟； 於上述第2光學膜上形成第2抗蝕膜，且進行第2繪圖，形成第2抗蝕圖案之第2抗蝕圖案形成步驟；及 以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案之第2圖案化步驟； 於上述第1圖案化步驟中，僅蝕刻上述第1光學膜， 於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且， 上述第2抗蝕圖案覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側，具有已增加特定寬度之邊際之尺寸。 圖1及圖2係表示本發明之第1實施形態之顯示裝置製造用光罩之製造步驟之側剖圖。 再者，圖中之A區域係對應於透光部之區域，B區域係對應於第1透過控制部之區域，C區域係對應於第2透過控制部之區域。換言之，A區域係預定形成透光部之區域，B區域係預定形成第1透過控制部之區域，C區域係預定形成第2透過控制部之區域。 (光罩基底準備步驟) 首先，準備圖1(a)所示之光罩基底1。該光罩基底1係於透明基板2上形成第1光學膜3，進而於該第1光學膜3上積層形成第1抗蝕膜4而成者。 透明基板2可使用石英玻璃等透明材料而構成。透明基板2之大小或厚度並無限制。若將光罩基底1用於顯示裝置之製造，則可使用具有一邊之長度為300～1800 mm、厚度為5～16 mm左右之四邊形之主面之透明基板2。 第1光學膜3可設為對於顯示裝置製造用光罩之曝光中所用之曝光之光(以下，亦簡稱為「曝光之光」)具有特定之透光率之半透光膜。又，第1光學膜3可設為對於曝光之光具有特定之透光率，並且於透過時將曝光之光之相位實質上反轉之相位偏移膜。進而，第1光學膜3又可設為對於曝光之光之相位偏移量較低之低相位半透光膜。本實施形態中，將第1光學膜3設為具有上述相位偏移作用之相位偏移膜。 作為相位偏移膜之第1光學膜3係設為對於曝光之光中所含之光之代表波長(例如i線、h線、g線中之任一者，此處設為i線)具有透光率T1(%)及相位偏移量1(度)者。於該情形時，第1光學膜3對於曝光之光之代表波長光之透光率T1(%)及相位偏移量1(度)較佳為2≦T1≦10、150≦1≦210，更佳為3≦T1≦8、165≦1≦195。本說明書中記述之膜之透光率係將透明基板2之透光率設為100%時之值。 又，作為相位偏移膜之第1光學膜3之對於i線、h線、g線之光之相位偏移量之偏差較佳為40度以下。又，第1光學膜係i線～g線之波長區域中之透光率之偏差較佳為2～8%。 第1光學膜3之材料例如可設為含有Cr、Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜，且可自該等之化合物(例如氧化物、氮化物、碳化物、氮氧化物、碳氮化物、碳氮氧化物等)選擇合適者。第1光學膜3之材料尤其可較佳地使用Cr之化合物。具體而言，於含有Cr之膜之情形時，較佳為含有Cr之氧化物、氮化物、氮氧化物、碳氮氧化物中之1種或複數種者。本第1實施形態係設為第1光學膜3由包含Cr之膜材料、例如包含Cr化合物之膜材料形成。又，第1光學膜3可設為不含Si之膜。若將第1光學膜3設為不含Si之膜，則於第1光學膜3與第1抗蝕膜4之密接性變高之方面較為有利。 作為第1光學膜3之其他膜材料，可使用Si之化合物(SiON等)、或過渡金屬矽化物(例如Mo、Ti、W、Ta等之矽化物)或其化合物。作為過渡金屬矽化物之化合物，可列舉氧化物、氮化物、氮氧化物、碳氮氧化物等，且可較佳地例示MoSi之氧化物、氮化物、氮氧化物、碳氮氧化物等。 第1光學膜3之成膜方法中可使用例如濺鍍法等公知之方法。 第1抗蝕膜4可利用EB(electron beam，電子束)抗蝕劑、光阻劑等形成。此處，作為一例，設為使用光阻劑。第1抗蝕膜4可藉由於第1光學膜3上塗佈光阻劑而形成。光阻劑可為正型、負型中之任一者，此處設為使用正型光阻劑。第1抗蝕膜4之膜厚可設為5000～10000 Å左右。 (第1抗蝕圖案形成步驟) 繼而，如圖1(b)所示，藉由將第1抗蝕膜4圖案化，而形成第1抗蝕圖案4a。於該步驟中，使用繪圖裝置對上述光罩基底1繪製所需之圖案(第1繪圖)。用以繪圖之能量線可使用電子束或雷射光束等，但此處設為使用雷射光束(波長410～420nm)。對光罩基底1進行繪圖後，將第1抗蝕膜4顯影，藉此形成第1抗蝕圖案4a。第1抗蝕圖案4a係設為覆蓋第1透過控制部之形成區域(B區域)，且於其他區域(A區域、C區域)具有開口之形狀。 (第1圖案化步驟) 繼而，如圖1(c)所示，藉由以第1抗蝕圖案4a為遮罩，蝕刻第1光學膜3，而形成第1光學膜圖案3a。此時，藉由蝕刻而將於第1抗蝕圖案4a之開口部露出之第1光學膜3去除。第1光學膜3之蝕刻既可為乾式蝕刻，亦可為濕式蝕刻。上述光罩基底1中係由包含Cr化合物之膜形成遮光膜3，故可較佳地適用使用Cr用之蝕刻液之濕式蝕刻。藉此，將透明基板2上之第1光學膜3圖案化，形成第1光學膜圖案3a。 第1圖案化步驟中成為蝕刻對象者僅為第1光學膜3。又，於較第1圖案化步驟靠後之步驟中，不存在蝕刻第1光學膜3之步驟。因此，第1光學膜圖案3a之形狀係於該階段劃定。因此，藉由本實施形態之製造方法所獲得之顯示裝置製造用光罩之第1透過控制部之區域係於第1圖案化步驟中劃定。 再者，濕式蝕刻存在使膜剖面產生輕微之側蝕之情形，於圖式中將該方面省略。於必須考慮該輕微之側蝕對CD精度造成之影響之情形時，於使用上述繪圖裝置進行繪圖時預先對繪圖資料實施資料加工即可。具體而言，以抵消因側蝕導致之圖案尺寸之減少量之方式，減少第1抗蝕圖案4a之開口尺寸即可。 (第1抗蝕劑剝離步驟) 繼而，如圖1(d)所示，剝離第1抗蝕圖案4a。藉此，可獲得附帶第1光學膜圖案3a之透明基板2。 (第2光學膜形成步驟) 繼而，如圖1(e)所示，於包括第1光學膜圖案3a之透明基板2上形成第2光學膜5。第2光學膜5係藉由特定之成膜方法而形成於透明基板2之轉印用圖案形成區域整體。作為第2光學膜5之成膜方法，可與上述第1光學膜3同樣地適用濺鍍法等公知之方法。 第2光學膜5可設為對於曝光之光具有特定之透光率之半透光膜。又，第2光學膜5可設為對於曝光之光具有特定之透光率，並且於透過時使曝光之光之相位實質上反轉之相位偏移膜。進而，第2光學膜5又可設為對於曝光之光之相位偏移量較低之低相位半透光膜。再者，本說明書中，亦將低相位半透光膜簡稱為半透光膜。第2光學膜5因其設為相位偏移膜或設為低相位半透光膜，而較佳之光學特性如下所述地不同。 即，作為相位偏移膜之第2光學膜5係設為對於曝光之光中所含之光之代表波長(例如i線、h線、g線中之任一者，此處為i線)具有透光率T2(%)及相位偏移量2(度)者。於該情形時，第2光學膜5對於曝光之光之代表波長光之透光率T2(%)及相位偏移量2(度)較佳為2≦T2≦10、150≦2≦210，更佳為3≦T2≦8、165≦2≦195。 又，作為相位偏移膜之第2光學膜5較佳為與上述第1光學膜3同樣地，對於i線、h線、g線之光之相位偏移量之偏差為40度以下。 與此相對，作為低相位半透光膜之第2光學膜5係於將第2光學膜5對於曝光之光之代表波長光之透光率設為T2(%)，相位偏移量設為2(度)時，較佳為10≦T2≦60、0＜2≦90，更佳為20≦T2≦50、5≦2≦60。 又，作為低相位半透光膜之第2光學膜5係i線～g線之波長區域中之透光率之偏差較佳為0～8%。此處記述之第2光學膜5之透光率之偏差係將對於i線之透過率設為Ti(%)且將對於g線之透過率設為Tg(%)時之Ti與Tg之差之絕對值。 因此，較佳為，以滿足該等條件之方式，調整第2光學膜5之膜質及膜厚。第2光學膜5之膜厚係因所需之透光率而變化，且大約可設為50～500 Å之範圍。本第1實施形態係將第2光學膜5設為低相位半透光膜。 第2光學膜5之材料例如可設為含有Cr、Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜，且可自該等之化合物(例如氧化物、氮化物、碳化物、氮氧化物、碳氮化物、碳氮氧化物等)選擇合適者。 作為第2光學膜5之其他膜材料，可使用Si之化合物(SiON等)、或過渡金屬矽化物(例如Mo、Ti、W、Ta等之矽化物)或其化合物。作為過渡金屬矽化物之化合物，可列舉氧化物、氮化物、氮氧化物、碳氮氧化物等，且較佳為例示MoSi之氧化物、氮化物、氮氧化物、碳氮氧化物等。 較佳為，第1光學膜3及第2光學膜5設為對於彼此之蝕刻劑具有耐受性之材料。即，較理想為，第1光學膜3及第2光學膜5設為相互具有蝕刻選擇性之材料。例如於第1光學膜3為包含Cr之膜之情形時，第2光學膜5膜設為包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜。 例如第1光學膜3與第2光學膜5較佳為一者為含Cr材料、另一者為含Si材料之組合。具體而言，於第1光學膜3中使用含Cr材料之情形時，較佳為第2光學膜5中使用含Si材料，且於第1光學膜3中使用含Si材料之情形時，較佳為第2光學膜5中使用含Cr材料。本第1實施形態中，因第1光學膜3中使用Cr化合物，故設為第2光學膜5中使用MoSi化合物。 (第2抗蝕膜形成步驟) 繼而，如圖2(f)所示，於第2光學膜5上積層地形成第2抗蝕膜6。第2抗蝕膜6可與上述第1抗蝕膜4同樣地，藉由塗佈光阻劑而形成。 (第2抗蝕圖案形成步驟) 繼而，如圖2(g)所示，藉由將第2抗蝕膜6圖案化，而形成第2抗蝕圖案6a。於該步驟中，與上述第1繪圖同樣地，使用繪圖裝置對光罩基底1繪製所需之圖案(第2繪圖)後，將第2抗蝕膜6顯影，藉此形成第2抗蝕圖案6a。 第2抗蝕圖案6a係用以形成顯示裝置製造用光罩之透光部之抗蝕圖案，且於對應於透光部之區域(A區域)具有開口。又，第2抗蝕圖案6a係覆蓋第2透過控制部之形成區域(C區域)，並且於第2透過控制部之邊緣處相鄰之2個第1透過控制部(B區域)側，具有已增加特定寬度之邊際之尺寸。若將該特定寬度之邊際部分設為邊際區域，且將該邊際區域之寬度設為M1(μm)，則較佳為0.2≦M1≦1.0，更佳為0.2≦M1≦0.8。 邊際區域之寬度M1之尺寸可考慮於第1抗蝕圖案3a與第2抗蝕圖案6a之間可能產生之對準偏移量而決定。即，於使用FPD(Flat Panel Display，平板顯示器)用等之繪圖裝置，以相同之透明基板為對象，實施2次以上之繪圖之情形時，各次之基板之位置對準使用對準標記準確地進行，但難以於各次中使基板之位置完全一致，從而不可避免地某種程度上產生相對之對準偏移。相對於此，藉由考慮製造步驟中可能產生之對準偏移量，預先設定邊際之寬度M1，而維持圖案精度。再者，關於上述邊際，於下述段落中進一步進行敍述。 (第2圖案化步驟) 繼而，如圖2(h)所示，藉由以第2抗蝕圖案6a為遮罩，蝕刻第2抗蝕圖案6a之開口部中露出之第2光學膜5，而形成第2光學膜圖案5a。此時，成為蝕刻對象者僅為第2光學膜5。藉此，於對應於透光部之區域(A區域)，藉由蝕刻而將透明基板2上之第2光學膜5去除，藉此形成使透明基板2之表面露出而成之透光部。又，於對應於第1透過控制部之區域(B區域)，於邊際區域以外之區域(主區域)藉由蝕刻而去除第2光學膜5。於該步驟中，亦可較佳地適用使用蝕刻液之濕式蝕刻。於該情形時，對於曝光之光之代表波長光，第1透過控制部之邊際區域與第2透過控制部(C區域)之相位差δ(度)較佳為150≦δ≦210。 (第2抗蝕劑剝離步驟) 繼而，如圖2(i)所示，剝離第2抗蝕圖案6a。 藉由以上步驟，完成顯示裝置製造用光罩9。 於上述顯示裝置製造用光罩之製造步驟中包括2次蝕刻步驟，但於任一蝕刻步驟中，成為蝕刻對象者均僅為一個膜。即，於本實施形態中，不會於積層有第1光學膜3與第2光學膜5之狀態下，藉由同一蝕刻劑連續蝕刻該2個膜。 若將形成積層結構之2個膜藉由同一蝕刻劑連續濕式蝕刻，則蝕刻時間變得相對較長，側蝕之量亦容易增加。側蝕對所形成之圖案之CD(Critical dimension)造成影響。關於側蝕，可藉由採取預先對繪圖資料實施量測等對策，而減輕CD之窄細化。但，即便於該情形時，亦難以消除伴隨側蝕之量增加而產生之面內之CD偏差。於該方面，本實施形態之顯示裝置製造用光罩之製造方法中不包括連續蝕刻第1光學膜3與第2光學膜5之積層部分之步驟，故具有可將最終形成之轉印用圖案之CD精度維持較高之優點。 ＜實施形態之顯示裝置製造用光罩之構成＞ 繼而，利用圖3對本發明之實施形態之顯示裝置製造用光罩之構成進行說明。 圖示之顯示裝置製造用光罩9包括具有於透明基板2上將第1光學膜3與第2光學膜5分別圖案化而形成之透光部10、第1透過控制部11及第2透過控制部12之轉印用圖案。該轉印用圖案包括透光部10、具有與透光部10相鄰之部分之第1透過控制部11、及具有與第1透過控制部11相鄰之部分之第2透過控制部12。透光部10成為露出有透明基板2之表面之部分。於第1透過控制部11，於透明基板2上形成有第1光學膜3。於第2透過控制部12，於透明基板2上形成有第2光學膜5。又，第1透過控制部11係於沿與第2透過控制部12相鄰之邊緣之特定寬度之部分，具有第1光學膜3與第2光學膜5進行積層之特定寬度之邊際區域13，並且於邊際區域13以外之部分，具有僅形成有第1光學膜3之主區域14。 此處，於本實施形態之顯示裝置製造用光罩9中，若將第1透過控制部11之邊際區域13之寬度設為M1(μm)，則較佳為0.2≦M1≦1.0，更佳為0.2≦M1≦0.8。於第1透過控制部11，於邊際區域13，在第1光學膜3上積層形成有第2光學膜5，且於作為邊際區域13以外之區域之主區域14，在透明基板2上僅形成有第1光學膜3。 於第2透過控制部12，在透明基板2上僅形成有第2光學膜5。 顯示裝置製造用光罩9之轉印用圖案包括自對向之兩方向由第1透過控制部11夾持之第2透過控制部12。而且，上述邊際區域13係形成於第1透過控制部11與第2透過控制部12各自之相鄰部分之第1透過控制部11側。 於本實施形態中，如上所述，第1光學膜3成為相位偏移膜，且第2光學膜5成為低相位半透光膜。於該情形時，第1透過控制部11對於曝光之光之代表波長光之透光率T1(%)較佳為2≦T1≦10，更佳為3≦T1≦8。 透過第1透過控制部11之曝光之光較佳為實質上不將形成於被轉印體上之抗蝕膜感光。即，第1透過控制部11較佳為於光罩中發揮類似遮光部之功能。 進而，於該情形時，第1光學膜3對於曝光之光之代表波長光之相位偏移量1(度)較佳為150≦1≦210。藉此，第1透過控制部11與透光部10之相鄰部分(圖3之P之部分)成為透過兩者之曝光之光之相位大致反轉之關係，且該相反相位之光相互干擾，藉此，透過光之強度降低。其結果，可獲得可使圖案之對比度提昇之所謂之相位偏移效應。因此，可設為減少形成於被轉印體上之抗蝕圖案之側面形狀之傾斜(傾倒)而具有與被轉印體之表面接近垂直之側面形狀之抗蝕圖案。 又，於第2光學膜5為低相位半透光膜之情形時，第2光學膜5對於曝光之光之代表波長光之透光率T2(%)及相位偏移量2(度)較佳為10≦T2≦60、0＜2≦90。 另一方面，於第1透過控制部11與第2透過控制部12之相鄰部分(圖3之Q之部分)，透過兩者之曝光之光之相位亦成為大致反轉之關係。再者，於Q之部分，存在於第1光學膜3上積層第2光學膜5，且於該等膜彼此接觸之界面之部分，因膜材料而於透過此處之光之相位中產生偏移之可能性。因此，於第1透過控制部11，難以準確地預測邊際區域13與主區域14之相互之相位差。然而，可將邊際區域13與主區域14之對於曝光之光之相位差大致設為180度，較佳為將該相位差δ設為150≦δ≦210，此處亦產生光之干擾，從而獲得對比度提昇之效果。 上述第1光學膜3所產生之相位偏移效應均有助於藉由利用本實施形態之顯示裝置製造用光罩9，將該轉印用圖案轉印至被轉印體而將所欲獲得之器件之精度或良率維持較高。 因此，邊際區域13之寬度M1較佳為除了設為吸收對準偏移之尺寸以外，且考慮藉由第1光學膜3獲得之相位偏移效應進行設計。邊際區域13之寬度M1(μm)可較佳地設為0.5≦M1≦1.0。 又，於藉由將第2光學膜5設為低相位半透光膜而將第2透過控制部12設為低相位半透光部之情形時，本實施形態之顯示裝置製造用光罩9可作為多階光罩發揮功能。即，對於形成於被轉印體上之抗蝕膜(此處假定為正型抗蝕劑)，本實施形態之顯示裝置製造用光罩9所包括之轉印用圖案之透過光於透光部10、第1透過控制部11、第2透過控制部12中成為分別不同之強度。因此，若利用顯示裝置製造用光罩9將被轉印體上之抗蝕膜曝光後進行顯影，則可形成包括無抗蝕殘膜之部分、具有特定量之抗蝕殘膜之部分、及抗蝕殘膜較該特定量薄之部分之抗蝕圖案。進而，可藉由第1光學膜3之相位偏移作用而設為側面形狀之傾斜較少之有利形狀之抗蝕圖案。 於顯示裝置製造用光罩9之轉印用圖案中，圖案線寬(CD)為1.5μm以上之情形較多。因而，例如若將第1透過控制部11之尺寸設為CD1(μm)且CD1≧3，則邊際區域13之寬度M1較佳為充分小於主區域14之尺寸M2。 於本實施形態之顯示裝置製造用光罩9中，第1透過控制部11之尺寸CD1較佳為CD1≧5。即，顯示裝置製造用光罩9之第1透過控制部11係大多數部分(主區域14)僅由形成於透明基板2上之第1光學膜3形成，且第2透過控制部12僅由形成於透明基板2上之第2光學膜5形成。因此，於成為顯示裝置製造用光罩9時，可直接發揮各膜所具有之光學特性(透過率、相位偏移量)。即，可將第1光學膜3、第2光學膜5等各個膜所具有之光學特性直接活用作光罩之各部分之特性。因此，可實現設計之自由度較大且忠實地發揮符合設計之特性之顯示裝置製造用光罩9。 ＜第2實施形態之顯示裝置製造用光罩之製造方法＞ 本發明之第2實施形態之顯示裝置製造用光罩之製造方法如下所述。 一種顯示裝置製造用光罩之製造方法，其特徵在於：該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，且上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括： 準備於上述透明基板上形成有上述第1光學膜、蝕刻遮罩膜、及第1抗蝕膜之光罩基底之步驟； 第1抗蝕圖案形成步驟，其係對於上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案； 以上述第1抗蝕圖案為遮罩，蝕刻上述蝕刻遮罩膜，形成蝕刻遮罩膜圖案之步驟； 第1圖案化步驟，其係以上述蝕刻遮罩膜圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案； 去除上述蝕刻遮罩膜圖案之步驟； 於包括上述第1光學膜圖案之上述透明基板上形成上述第2光學膜之步驟； 第2抗蝕圖案形成步驟，其係於上述第2光學膜上形成第2抗蝕膜，進行第2繪圖，形成第2抗蝕圖案；及 第2圖案化步驟，其係以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案； 於上述第1圖案化步驟中，僅蝕刻上述第1光學膜， 於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且 上述第2抗蝕圖案覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側，具有已增加特定寬度之邊際之尺寸。 圖4及圖5係表示本發明之第2實施形態之顯示裝置製造用光罩之製造步驟之側剖圖。 於該第2實施形態中，對於與上述第1實施形態相對應之部分標註相同之符號進行說明。 (光罩基底準備步驟) 首先，準備圖4(a)所示之光罩基底1。該光罩基底1係於透明基板2上依序積層形成第1光學膜3及蝕刻遮罩膜7，進而於該蝕刻遮罩膜7之上積層形成第1抗蝕膜4而成者。與第1實施形態之不同之處為形成有蝕刻遮罩膜7。 適用於第2實施形態之光罩基底1之透明基板2係與第1實施形態相同。 與第1實施形態同樣地，第1光學膜3可設為對於曝光之光具有特定之透光率之半透光膜。又，第1光學膜3可設為對於曝光之光具有特定之透光率，並且於透過時使曝光之光之相位實質上反轉之相位偏移膜。本第2實施形態中亦將第1光學膜3設為具有相位偏移作用之相位偏移膜。 第1光學膜3可設為含有Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜，且可自該等之化合物(例如氧化物、氮化物、碳化物、氮氧化物、碳氮化物、碳氮氧化物等)選擇合適者。 尤其，作為第1光學膜3之較佳之材料，可使用Si之化合物(SiON等)、或過渡金屬矽化物(例如Mo、Ti、W、Ta等之矽化物)等或其化合物。作為過渡金屬矽化物之化合物，可列舉氧化物、氮化物、氮氧化物、碳氮氧化物等，較佳為例示MoSi之氧化物、氮化物、氮氧化物、碳氮氧化物等。本第2實施形態中設為第1光學膜3由包含Si之膜材料、例如包含MoSi之膜材料形成。 蝕刻遮罩膜7較佳為由於與第1光學膜3之間對彼此之蝕刻劑具有耐受性之材料形成。即，蝕刻遮罩膜7與第1光學膜3較佳為由相互具有蝕刻選擇性之材料形成。 本第2實施形態中，因由包含Si之膜形成第1光學膜3，故可由作為與該第1光學膜3具有蝕刻選擇性之材料之例如包含Cr之膜材料形成蝕刻遮罩膜7。具體而言，蝕刻遮罩膜7較佳為含有Cr之化合物、例如Cr之氧化物、氮化物、氮氧化物、碳氮氧化物中之1種或複數種。於該情形時，蝕刻遮罩膜7可設為不含Si之膜。若將蝕刻遮罩膜7設為不含Si之膜，則與含有Si之情形相比，於與第1抗蝕膜4之密接性提昇之方面較為有利。即，蝕刻遮罩膜與抗蝕膜之密接性較佳為大於第1光學膜3與抗蝕膜之密接性。 第1抗蝕膜4係與上述第1實施形態相同。 (第1抗蝕圖案形成步驟) 繼而，如圖4(b)所示，藉由將第1抗蝕膜4圖案化，而形成第1抗蝕圖案4a。於該步驟中，使用繪圖裝置對上述光罩基底1繪製所需之圖案(第1繪圖)。用於繪圖之能量線係與上述第1實施形態相同。對光罩基底1進行繪圖後，進行顯影，藉此形成第1抗蝕圖案4a。第1抗蝕圖案4a係設為覆蓋第1透過控制部之形成區域(B區域)，且於其他區域(A區域、C區域)具有開口之形狀。 (蝕刻遮罩膜圖案形成步驟) 繼而，如圖4(c)所示，藉由以第1抗蝕圖案4a為遮罩，將蝕刻遮罩膜7進行蝕刻，而形成蝕刻遮罩膜圖案7a。此時，藉由蝕刻而將於第1抗蝕圖案4a之開口部露出之蝕刻遮罩膜7去除。蝕刻遮罩膜7之蝕刻既可為乾式蝕刻，亦可為濕式蝕刻。本實施形態係由含有Cr之膜形成蝕刻遮罩膜7，故可較佳地適用使用Cr用之蝕刻液之濕式蝕刻。 (第1圖案化步驟) 繼而，與上一步驟更換蝕刻劑，如圖4(d)所示，藉由以蝕刻遮罩膜圖案7a為遮罩，蝕刻第1光學膜3，而形成第1光學膜圖案3a。此時，藉由蝕刻而將於蝕刻遮罩膜圖案7a之開口部露出之第1光學膜3去除。本實施形態係由含有Si之膜(例如含MoSi膜)形成第1光學膜3，故可較佳地適用使用包含氫氟酸之蝕刻液之濕式蝕刻。 第1圖案化步驟係與上述第1實施形態同樣地僅以第1光學膜3為蝕刻對象，故第1光學膜圖案3a之形狀或第1透過控制部之區域於該階段劃定。 (第1抗蝕劑剝離步驟) 繼而，如圖4(e)所示，剝離第1抗蝕圖案4a。第1抗蝕圖案4a之剝離亦可於形成蝕刻遮罩膜圖案7a後，且進行第1光學膜3之蝕刻之前進行。 (蝕刻遮罩膜圖案去除步驟) 繼而，如圖4(f)所示，去除蝕刻遮罩膜圖案7a。藉此，可獲得附帶第1光學膜圖案3a之透明基板2。 (第2光學膜形成步驟) 繼而，如圖5(g)所示，於包括第1光學膜圖案3a之透明基板2上形成第2光學膜5。第2光學膜5係與上述第1實施形態同樣地適用濺鍍法等公知之方法，形成於透明基板2上之轉印用圖案形成區域整體。 於本第2實施形態中，與上述第1實施形態同樣地，將第2光學膜5設為低相位半透光膜。 第2光學膜5例如可設為含有Cr、Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜，且可自該等之化合物(例如氧化物、氮化物、碳化物、氮氧化物、碳氮化物、碳氮氧化物等)選擇合適者。 其中，第1光學膜3與第2光學膜5較佳為由對於彼此之蝕刻劑具有耐受性之材料形成。即，第1光學膜3與第2光學膜5較理想為相互具有蝕刻選擇性之材料。例如於第1光學膜3為包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜之情形時，第2光學膜5設為包含與其不同之材料即Cr之膜。 因此，例如於第1光學膜3中使用含Si材料之情形時，較佳為第2光學膜5中使用含Cr材料。若列舉具體例，則於第1光學膜3中使用含MoSi材料之情形時，較佳為第2光學膜5中使用Cr化合物。 以下，與上述第1實施形態同樣地，藉由依序進行第2抗蝕膜形成步驟(圖5(h))、第2抗蝕圖案形成步驟(圖5(i))、第2圖案化步驟(圖5(j))、第2抗蝕劑剝離步驟(圖5(k))，而完成顯示裝置製造用光罩9。 於本第2實施形態之顯示裝置製造用光罩之製造方法中，在第1抗蝕劑剝離步驟(圖4(e))後之蝕刻遮罩膜圖案去除步驟(圖4(f))中去除蝕刻遮罩膜圖案7a，但並不限於此。例如亦可藉由於第1抗蝕劑剝離步驟(圖4(e))之後追加光微影法步驟，而使蝕刻遮罩膜圖案7a之一部分殘留，且將其用於圖案化。具體而言，例如亦可藉由以蝕刻遮罩膜7為遮光膜，且將該蝕刻遮罩膜7於上述光微影法步驟中圖案化，而於轉印用圖案以外之區域(光罩之外緣附近等)，形成遮罩圖案等。當然，亦可於轉印用圖案內之特定部分，使蝕刻遮罩膜圖案7a之一部分殘留。 又，於本第2實施形態之顯示裝置製造用光罩之製造方法中，省略了與上述第1實施形態重複之說明。因此，第1實施形態之製造方法中記述之內容之中無特別阻礙者均可同樣適用於第2實施形態。 又，本發明之實施形態之顯示裝置製造用光罩9(圖3)可藉由上述第1實施形態之製造方法、或上述第2實施形態之製造方法中之任一者製造。 於本發明之實施形態之顯示裝置製造用光罩9中，第1透過控制部11係除邊際區域13以外，於透明基板2上僅形成有第1光學膜3，且第2透過控制部12係於透明基板2上僅形成有第2光學膜5。因此，於第1透過控制部11之主區域14，第1光學膜3所具有之光學特性得以發揮，且於第2透過控制部12，第2光學膜5所具有之光學特性得以發揮。 又，於第1透過控制部11與第2透過控制部12相鄰之部分，在作為第1透過控制部11側之邊緣部分之邊際區域13，存在第1光學膜3與第2光學膜5所造成之窄幅之積層部分。其中，該積層部分係實質上作為遮光部發揮功能之部分，故因積層所導致之透光率之降低不會成為問題，故具有可藉由上述相位偏移效應獲得光強度分佈之鮮明變化之優點。 又，用以獲得顯示裝置製造用光罩9之光罩基底1係於第1實施形態中在透明基板2上形成有第1光學膜3及第1抗蝕膜4(圖1(a))，且於第2實施形態中在透明基板2上形成有第1光學膜3、蝕刻遮罩膜7及第1抗蝕膜4之構成(圖4(a))。其中，於任一實施形態中，最終成為形成轉印用圖案之光學膜者均僅為形成於透明基板2上之第1光學膜3。因此，如上述實施形態中所述，將第1光學膜3設為相位偏移膜較為有利。其原因如下所述。一般而言，半透光膜(低相位半透光膜)作為市場之需求可能存在各種透光率者，無法預先製造。與此相對，相位偏移膜係市場所需求之規格大致固定。因此，如本發明之實施形態般，可藉由預先準備將第1光學膜3作為相位偏移膜形成於透明基板2上所成之光罩基底1，而提昇生產效率，於短交期內滿足遮罩使用者之需要。 又，根據本發明之實施形態之顯示裝置製造用光罩9之製造方法，將第1光學膜3及第2光學膜5分別藉由蝕刻單一膜之步驟進行圖案化。即，不存在以同一蝕刻劑連續蝕刻將第1光學膜3與第2光學膜5積層而成之2個膜之步驟。因此，可形成CD精度充分高之轉印用圖案。 進而，藉由本發明之實施形態之製造方法所獲得之顯示裝置製造用光罩9具有以下優點，即，於與第2透過控制部12相鄰之第1透過控制部11之邊緣，可利用相位偏移效應獲得對比度之提昇，另一方面，於邊緣以外之部分，分別準確地發揮對單一膜設計所得之光學特性。 本發明之實施形態之顯示裝置製造用光罩9具有以下優點，即，於顯示裝置等之製造中，作為減少所使用光罩之片數之多階光罩較為有用，而且形成於被轉印體上之抗蝕圖案之形狀藉由上述相位偏移效應而成為側面傾斜較少之形狀。因此，對顯示裝置之TFT(Thin Film Transistor，薄膜電晶體)層等較為有用。 於此種用途中，利用自對向之兩方向由第1透過控制部11夾入第2透過控制部12之形狀之轉印用圖案。於此種轉印用圖案中，尤其可藉由相位偏移效應而以較高之對比度形成抗蝕圖案之側面形狀，故較為有效。又，亦可將本發明適用於由第1透過控制部11包圍第2透過控制部12之形狀之轉印圖案。 當然，亦可用於形成彩色濾光片等中使用之感光性樹脂所成之立體形狀(感光性間隔件等)之用途。 又，本發明亦可作為包括以下步驟之顯示裝置之製造方法而實現，即，準備利用上述第1實施形態或第2實施形態之製造方法製造之顯示裝置製造用光罩9、或上述實施形態之顯示裝置製造用光罩9；及藉由曝光裝置而將顯示裝置製造用光罩9所具有之轉印用圖案曝光。於顯示裝置之製造方法中，較佳為使用顯示裝置製造用光罩9作為多階光罩。於該情形時，藉由經由安裝於曝光裝置之顯示裝置製造用光罩9，將被轉印體上之光阻膜曝光，而將顯示裝置製造用光罩9之轉印用圖案轉印至被轉印體。藉此，於被轉印體上，可藉由透光部10、第1透過控制部11及第2透過控制部12之透光率之不同，而形成複數個具有殘餘膜厚之立體形狀之抗蝕圖案。於包含此種步驟之顯示裝置之製造方法中，使用顯示裝置製造用光罩9較為有利。 本發明之顯示裝置製造用光罩可較佳地用於利用作為LCD(Liquid Crystal Display)用途或FPD(Flat Panel Display)用途已為人知之曝光裝置之曝光。作為此種曝光裝置，可使用如下投影曝光裝置，該投影曝光裝置係例如以i線、h線、g線中之任一者為曝光之光，又，較佳為使用包括i線、h線、g線全部之曝光之光，且具有數值孔徑(NA)為0.08～0.15且同調因子(σ)為0.7～0.9左右之等倍光學系統。當然，本發明之顯示裝置製造用光罩亦可用作近接式曝光用之光罩。 本發明之顯示裝置製造用光罩尤其適合用於包括液晶顯示裝置、有機EL顯示裝置等之顯示裝置之製造。又，本發明之顯示裝置製造用光罩可用於該等顯示裝置之各種部位(接觸孔、薄膜電晶體之S(Source，源極)/D(Drain，汲極)層、彩色濾光片之感光性間隔件用層等)之形成。 又，本發明之顯示裝置製造用光罩於發揮本發明之作用效果之範圍內，除第1光學膜3及第2光學膜5以外，亦可具有追加之膜或膜圖案。例如亦可於透明基板2之正面(轉印用圖案面)側或背面側配置光學濾光膜、導電膜、絕緣膜、抗反射膜等。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. <The manufacturing method of the mask for manufacturing a display device of 1st Embodiment> The manufacturing method of the mask for manufacturing a display device of 1st Embodiment of this invention is as follows. A manufacturing method of a photomask for display device manufacturing, characterized in that the photomask for display device manufacturing includes a pattern for transfer formed by patterning a first optical film and a second optical film on a transparent substrate, respectively, and the above-mentioned The transfer pattern includes a light-transmitting portion exposing the surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and a second transmission having a portion adjacent to the first transmission control portion. The control unit includes the first optical film formed on the transparent substrate in the first transmission control unit, the second optical film formed on the transparent substrate in the second transmission control unit, and the display device. A manufacturing method of a manufacturing mask includes: a step of preparing a mask base on which the first optical film and the first resist film are formed on the transparent substrate; performing a first drawing on the first resist film to form a first mask; A first resist pattern forming step of a resist pattern; using the first resist pattern as a mask, etching the first optical film to form a first patterning step of the first optical film pattern; including the first optical pattern; A step of forming the second optical film on the patterned transparent substrate; forming a second resist film on the second optical film; and performing a second drawing to form a second resist pattern forming step of the second resist pattern; And a second patterning step of etching the second optical film using the second resist pattern as a mask to form a second optical film pattern; in the first patterning step, only the first optical film is etched, and In the second patterning step, only the second optical film is etched, and the second resist pattern covers the formation area of the second transmission control section, and the adjacent to the edge of the second transmission control section. The first transmission control unit has a size with a margin that has been increased by a specific width. 1 and 2 are side sectional views showing manufacturing steps of a photomask for manufacturing a display device according to a first embodiment of the present invention. Furthermore, the area A in the figure corresponds to the area of the light transmitting portion, the area B corresponds to the area of the first transmission control portion, and the area C corresponds to the area of the second transmission control portion. In other words, the area A is an area intended to form a light transmitting portion, the area B is an area intended to form a first transmission control portion, and the area C is an area intended to form a second transmission control portion. (Mask substrate preparation step) First, a mask substrate 1 shown in FIG. 1 (a) is prepared. The photomask base 1 is formed by forming a first optical film 3 on a transparent substrate 2 and further laminating a first resist film 4 on the first optical film 3. The transparent substrate 2 can be configured using a transparent material such as quartz glass. The size or thickness of the transparent substrate 2 is not limited. When the photomask base 1 is used for the manufacture of a display device, a transparent substrate 2 having a main surface of a quadrangle having a length of 300 to 1800 mm on one side and a thickness of about 5 to 16 mm can be used. The first optical film 3 may be a semi-transmissive film having a specific light transmittance for exposure light (hereinafter, also simply referred to as "exposure light") used in exposure of a mask for manufacturing a display device. In addition, the first optical film 3 may be a phase shift film having a specific light transmittance with respect to the exposed light and substantially inverting the phase of the exposed light when transmitted. Furthermore, the first optical film 3 may be a low-phase translucent film having a low phase shift amount with respect to the exposed light. In this embodiment, the first optical film 3 is a phase shift film having the above-mentioned phase shift effect. The first optical film 3 as a phase shift film is set to have a representative wavelength of light included in the exposed light (for example, any of i-line, h-line, and g-line, here i-line). Light transmittance T1 (%) and phase shift 1 (degrees). In this case, the light transmittance T1 (%) and the phase shift amount of the first optical film 3 to the light of the representative wavelength of the exposed light 1 (degree) is preferably 2 ≦ T1 ≦ 10, 150 ≦ 1 ≦ 210, more preferably 3 ≦ T1 ≦ 8, 165 ≦ 1 ≦ 195. The light transmittance of the film described in this specification is a value when the light transmittance of the transparent substrate 2 is 100%. Moreover, it is preferable that the deviation of the phase shift amount of the 1st optical film 3 with respect to the light of i line, h line, and g line as a phase shift film is 40 degrees or less. Moreover, it is preferable that the dispersion | variation in the transmittance | permeability in the wavelength region of i-line to g-line of a 1st optical film is 2-8%. The material of the first optical film 3 can be, for example, a film containing any one of Cr, Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, and can be obtained from such compounds (for example, oxides) , Nitrides, carbides, oxynitrides, carbonitrides, carbonitrides, etc.) select the appropriate one. As the material of the first optical film 3, a compound of Cr is particularly preferably used. Specifically, in the case of a film containing Cr, one or a plurality of oxides, nitrides, oxynitrides, and carbonitrides containing Cr are preferred. In the first embodiment, the first optical film 3 is formed of a film material containing Cr, for example, a film material containing a Cr compound. The first optical film 3 may be a film not containing Si. When the first optical film 3 is a film not containing Si, it is advantageous in that the adhesion between the first optical film 3 and the first resist film 4 is improved. As other film materials of the first optical film 3, a compound of Si (such as SiON), a transition metal silicide (such as a silicide of Mo, Ti, W, Ta, etc.) or a compound thereof can be used. Examples of the compound of the transition metal silicide include oxides, nitrides, oxynitrides, and carbonitrides. MoSi oxides, nitrides, oxynitrides, and oxycarbonitrides are preferably exemplified. For the film formation method of the first optical film 3, a known method such as a sputtering method can be used. The first resist film 4 can be formed using an EB (electron beam) resist, a photoresist, or the like. Here, as an example, a photoresist is used. The first resist film 4 can be formed by coating a photoresist on the first optical film 3. The photoresist may be either a positive type or a negative type, and it is assumed here that a positive type photoresist is used. The thickness of the first resist film 4 can be set to about 5000 to 10,000 Å. (First resist pattern forming step) Next, as shown in FIG. 1 (b), the first resist film 4 is patterned to form a first resist pattern 4 a. In this step, a drawing device is used to draw a desired pattern on the mask substrate 1 (first drawing). The energy lines used for drawing can be electron beams or laser beams, but here it is assumed that laser beams (wavelengths 410 to 420 nm) are used. After the mask base 1 is patterned, the first resist film 4 is developed to form a first resist pattern 4a. The first resist pattern 4a has a shape that covers the formation region (B region) of the first transmission control portion, and has an opening in other regions (A region, C region). (First Patterning Step) Next, as shown in FIG. 1 (c), the first optical film 3 is etched by using the first resist pattern 4 a as a mask to form a first optical film pattern 3 a. At this time, the first optical film 3 exposed from the opening of the first resist pattern 4a is removed by etching. The etching of the first optical film 3 may be either dry etching or wet etching. Since the light-shielding film 3 is formed from a film containing a Cr compound in the photomask substrate 1, the wet etching using an etching solution for Cr is preferably used. Thereby, the first optical film 3 on the transparent substrate 2 is patterned to form a first optical film pattern 3a. Only the first optical film 3 is the object to be etched in the first patterning step. In addition, in a step subsequent to the first patterning step, there is no step of etching the first optical film 3. Therefore, the shape of the first optical film pattern 3a is determined at this stage. Therefore, the area of the first transmission control portion of the photomask for display device manufacturing obtained by the manufacturing method of this embodiment is defined in the first patterning step. Furthermore, the wet etching may cause slight side etching of the film cross section, and this aspect is omitted in the drawings. When it is necessary to consider the influence of the slight side etch on the accuracy of the CD, it is sufficient to perform data processing on the drawing data in advance when drawing using the above drawing device. Specifically, the opening size of the first resist pattern 4a may be reduced so as to offset the decrease in the pattern size due to the side etching. (First resist stripping step) Next, as shown in FIG. 1 (d), the first resist pattern 4 a is peeled. Thereby, the transparent substrate 2 with the 1st optical film pattern 3a can be obtained. (Second Optical Film Forming Step) Next, as shown in FIG. 1 (e), a second optical film 5 is formed on the transparent substrate 2 including the first optical film pattern 3a. The second optical film 5 is formed on the entire transfer pattern forming region of the transparent substrate 2 by a specific film forming method. As a film forming method of the second optical film 5, a known method such as a sputtering method can be applied similarly to the first optical film 3. The second optical film 5 may be a semi-transmissive film having a specific light transmittance with respect to exposed light. In addition, the second optical film 5 may be a phase shift film that has a specific light transmittance with respect to the exposed light and substantially reverses the phase of the exposed light when transmitted. Furthermore, the second optical film 5 may be a low-phase translucent film having a low phase shift amount with respect to the exposed light. In addition, in this specification, a low-phase translucent film is also simply referred to as a translucent film. Since the second optical film 5 is a phase shift film or a low-phase semi-transmissive film, the preferable optical characteristics are different as described below. That is, the second optical film 5 as a phase shift film is set to a representative wavelength of light contained in the exposed light (for example, any of i-line, h-line, and g-line, here i-line) With light transmittance T2 (%) and phase shift 2 (degrees). In this case, the light transmittance T2 (%) and the phase shift amount of the second optical film 5 to the light of the representative wavelength of the exposed light 2 (degrees) is preferably 2 ≦ T2 ≦ 10, 150 ≦ 2 ≦ 210, more preferably 3 ≦ T2 ≦ 8, 165 ≦ 2 ≦ 195. The second optical film 5 as the phase shift film is preferably the same as the first optical film 3 described above, and the deviation of the phase shift amount of light with respect to i-line, h-line, and g-line is 40 degrees or less. On the other hand, the second optical film 5 as a low-phase semi-transmissive film is obtained by setting the light transmittance of the second optical film 5 to light having a representative wavelength of light as T2 (%), and the phase shift amount is When 2 (degrees), 10 ≦ T2 ≦ 60, 0 < 2 ≦ 90, more preferably 20 ≦ T2 ≦ 50, 5 ≦ 2 ≦ 60. In addition, the deviation of the light transmittance in the wavelength range of the i-line to g-line of the second optical film 5 which is a low-phase semi-transmissive film is preferably 0 to 8%. The deviation of the light transmittance of the second optical film 5 described here is the difference between Ti and Tg when the transmittance to the i-line is set to Ti (%) and the transmittance to the g-line is set to Tg (%). The absolute value. Therefore, it is preferable to adjust the film quality and film thickness of the second optical film 5 so as to satisfy these conditions. The film thickness of the second optical film 5 varies depending on the required light transmittance, and can be set to a range of approximately 50 to 500 Å. In the first embodiment, the second optical film 5 is a low-phase translucent film. The material of the second optical film 5 can be, for example, a film containing any one of Cr, Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, and can be obtained from such compounds (for example, oxides) , Nitrides, carbides, oxynitrides, carbonitrides, carbonitrides, etc.) select the appropriate one. As another film material of the second optical film 5, a compound of Si (such as SiON), a transition metal silicide (such as a silicide of Mo, Ti, W, Ta, etc.) or a compound thereof can be used. Examples of the compound of the transition metal silicide include oxides, nitrides, oxynitrides, and carbonitrides. MoSi oxides, nitrides, oxynitrides, and oxycarbonitrides are preferably exemplified. Preferably, the first optical film 3 and the second optical film 5 are made of a material that is resistant to each other's etchant. That is, it is preferable that the first optical film 3 and the second optical film 5 are made of materials having etching selectivity to each other. For example, when the first optical film 3 is a film containing Cr, the second optical film 5 is a film containing any one of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf. For example, the first optical film 3 and the second optical film 5 are preferably a combination of one of a Cr-containing material and the other of a Si-containing material. Specifically, when a Cr-containing material is used in the first optical film 3, it is preferable that when a Si-containing material is used in the second optical film 5, and when a Si-containing material is used in the first optical film 3, it is more preferable. Preferably, a Cr-containing material is used for the second optical film 5. In the first embodiment, since a Cr compound is used for the first optical film 3, a MoSi compound is used for the second optical film 5. (Second Resist Film Forming Step) Next, as shown in FIG. 2 (f), a second resist film 6 is formed on the second optical film 5 by lamination. The second resist film 6 can be formed by applying a photoresist in the same manner as the first resist film 4 described above. (Second Resist Pattern Forming Step) Next, as shown in FIG. 2 (g), the second resist pattern 6a is formed by patterning the second resist film 6. In this step, similarly to the first drawing described above, a desired pattern (second drawing) is drawn on the mask base 1 using a drawing device, and then the second resist film 6 is developed to form a second resist pattern. 6a. The second resist pattern 6a is a resist pattern for forming a light transmitting portion of a mask for manufacturing a display device, and has an opening in a region (A region) corresponding to the light transmitting portion. The second resist pattern 6a covers the formation area (C area) of the second transmission control portion, and is adjacent to the two first transmission control portions (B area) on the edge of the second transmission control portion. The size of the margin of a specific width has been increased. If the marginal part of the specific width is a marginal area and the width of the marginal area is M1 (μm), it is preferably 0.2 ≦ M1 ≦ 1.0, and more preferably 0.2 ≦ M1 ≦ 0.8. The size of the width M1 of the marginal region can be determined in consideration of the amount of misalignment that may occur between the first resist pattern 3a and the second resist pattern 6a. That is, when a drawing device such as FPD (Flat Panel Display) is used, the same transparent substrate is used as the object, and when the drawing is performed twice or more, the position of each substrate is accurately aligned using an alignment mark. It is difficult to make the positions of the substrates completely consistent in each time, and it is unavoidable to cause relative alignment deviation to some extent. On the other hand, the marginal width M1 is set in advance by taking into account the amount of misalignment that may occur in the manufacturing process, so as to maintain the pattern accuracy. The above-mentioned margin will be further described in the following paragraphs. (Second patterning step) Next, as shown in FIG. 2 (h), by using the second resist pattern 6a as a mask, the second optical film 5 exposed in the opening portion of the second resist pattern 6a is etched. A second optical film pattern 5a is formed. At this time, only the second optical film 5 is the subject of etching. Thereby, in the area (A area) corresponding to the light-transmitting portion, the second optical film 5 on the transparent substrate 2 is removed by etching, thereby forming a light-transmitting portion in which the surface of the transparent substrate 2 is exposed. The second optical film 5 is removed by etching in a region (B region) corresponding to the first transmission control portion and in a region (main region) other than the marginal region. In this step, wet etching using an etchant is also preferably applied. In this case, for the representative wavelength light of the exposed light, the phase difference δ (degrees) between the marginal region of the first transmission control unit and the second transmission control unit (C region) is preferably 150 ≦ δ ≦ 210. (Second resist peeling step) Next, as shown in FIG. 2 (i), the second resist pattern 6a is peeled. Through the above steps, the photomask 9 for manufacturing a display device is completed. The manufacturing step of the above-mentioned photomask for display device manufacturing includes two etching steps. However, in any of the etching steps, the subject to be etched is only one film. That is, in this embodiment, the two films are not continuously etched by the same etchant in a state where the first optical film 3 and the second optical film 5 are laminated. If the two films forming the laminated structure are continuously wet-etched by the same etchant, the etching time becomes relatively long, and the amount of side etching is also easily increased. Side etching affects the CD (Critical dimension) of the formed pattern. Regarding the side erosion, it is possible to reduce the narrowing of the CD by taking measures such as measuring the drawing data in advance. However, even in this case, it is difficult to eliminate the in-plane CD deviation caused by an increase in the amount of side etching. In this respect, the manufacturing method of the photomask for the display device of this embodiment does not include a step of continuously etching the laminated portion of the first optical film 3 and the second optical film 5, so it has a pattern for transferring the final formation The advantage of maintaining high CD accuracy. <Configuration of Photomask for Manufacturing Display Device According to Embodiment> Next, the configuration of a mask for manufacturing a display device according to an embodiment of the present invention will be described with reference to FIG. 3. The illustrated photomask 9 for manufacturing a display device includes a light transmitting portion 10, a first transmission control portion 11 and a second transmission formed by patterning a first optical film 3 and a second optical film 5 on a transparent substrate 2. The pattern for transfer by the control section 12. The transfer pattern includes a light transmitting portion 10, a first transmission control portion 11 having a portion adjacent to the light transmitting portion 10, and a second transmission control portion 12 having a portion adjacent to the first transmission control portion 11. The light transmitting portion 10 is a portion where the surface of the transparent substrate 2 is exposed. A first optical film 3 is formed on the transparent substrate 2 in the first transmission control unit 11. A second optical film 5 is formed on the transparent substrate 2 in the second transmission control unit 12. In addition, the first transmission control unit 11 is a marginal region 13 having a specific width where the first optical film 3 and the second optical film 5 are laminated along a specific width along the edge adjacent to the second transmission control unit 12, In addition to the marginal region 13, there is a main region 14 in which only the first optical film 3 is formed. Here, in the mask 9 for manufacturing a display device according to this embodiment, if the width of the marginal region 13 of the first transmission control unit 11 is M1 (μm), it is preferably 0.2 ≦ M1 ≦ 1.0, and more preferably It is 0.2 ≦ M1 ≦ 0.8. A second optical film 5 is laminated on the first optical control layer 3 on the first transmission control unit 11 on the marginal region 13 on the first optical film 3, and is formed on the transparent substrate 2 only on the main region 14 as a region other than the marginal region 13. There is a first optical film 3. In the second transmission control section 12, only the second optical film 5 is formed on the transparent substrate 2. The transfer pattern of the mask 9 for manufacturing a display device includes a second transmission control unit 12 sandwiched by the first transmission control unit 11 in two directions facing each other. The marginal region 13 is formed on the side of the first transmission control unit 11 adjacent to each of the first transmission control unit 11 and the second transmission control unit 12. In this embodiment, as described above, the first optical film 3 becomes a phase shift film, and the second optical film 5 becomes a low-phase semi-transmissive film. In this case, the light transmittance T1 (%) of the first transmission control unit 11 for light having a representative wavelength of the exposed light is preferably 2 ≦ T1 ≦ 10, and more preferably 3 ≦ T1 ≦ 8. It is preferable that the light that is exposed through the first transmission control unit 11 does not substantially photosensitize the resist film formed on the object to be transferred. That is, the first transmission control section 11 preferably functions as a light-shielding section in the photomask. Furthermore, in this case, the phase shift amount of the first optical film 3 with respect to the light of the representative wavelength of the exposed light 1 (degree) is preferably 150 ≦ 1 ≦ 210. Thereby, the adjacent part (part P of FIG. 3) of the 1st transmission control part 11 and the light transmission part 10 becomes the relationship which the phase of the light which passed through both exposures is substantially reversed, and the light of the opposite phase interferes with each other As a result, the intensity of transmitted light is reduced. As a result, a so-called phase shift effect that can increase the contrast of a pattern can be obtained. Therefore, it can be set as the resist pattern which reduces the inclination (falling) of the side shape of the resist pattern formed on the to-be-transferred body, and has a side shape which is perpendicular | vertical to the surface of a to-be-transferred body. In the case where the second optical film 5 is a low-phase translucent film, the light transmittance T2 (%) and the phase shift amount of the second optical film 5 with respect to the light of the representative wavelength of the exposed light 2 (degrees) is preferably 10 ≦ T2 ≦ 60, 0 < 2 ≦ 90. On the other hand, in the adjacent portion of the first transmission control unit 11 and the second transmission control unit 12 (portion Q in FIG. 3), the phase of the light that has passed through the two exposures has also been roughly reversed. Furthermore, in the part of Q, the second optical film 5 is laminated on the first optical film 3, and the part of the interface where the films are in contact with each other is deviated in the phase of the light transmitted therethrough due to the film material. The possibility of shifting. Therefore, it is difficult to accurately predict the phase difference between the marginal region 13 and the main region 14 in the first transmission control unit 11. However, the phase difference between the marginal area 13 and the main area 14 with respect to the exposed light can be set to approximately 180 degrees, and it is preferable to set the phase difference δ to 150 ≦ δ ≦ 210, and light interference also occurs here, so that Get the effect of contrast enhancement. The phase shift effect produced by the first optical film 3 described above contributes to the desired acquisition of the desired pattern by using the photomask 9 for manufacturing a display device according to the present embodiment to transfer the pattern for transfer to the object to be transferred. The accuracy or yield of the device remains high. Therefore, the width M1 of the marginal region 13 is preferably designed in consideration of the phase shift effect obtained by the first optical film 3 in addition to the size that absorbs the alignment shift. The width M1 (μm) of the marginal region 13 can be preferably set to 0.5 ≦ M1 ≦ 1.0. When the second optical film 5 is a low-phase translucent film and the second transmission control section 12 is a low-phase translucent section, the photomask 9 for manufacturing a display device according to this embodiment is used. Can function as a multi-level mask. That is, with respect to the resist film formed on the object to be transferred (herein, a positive resist is assumed), the light transmitted through the pattern for transfer included in the mask 9 for manufacturing a display device according to this embodiment transmits light. The intensity of each of the unit 10, the first transmission control unit 11, and the second transmission control unit 12 is different. Therefore, if the resist film on the transfer target is exposed and developed using the photomask 9 for manufacturing a display device, a portion including a non-resistive residual film, a portion having a specific amount of the residual resist film can be formed, and The resist pattern of the portion where the resist residual film is thinner than the specified amount. Furthermore, the phase shift effect of the first optical film 3 can be used to form a resist pattern having a favorable shape with less inclination in the side shape. Of the patterns for transfer of the mask 9 for manufacturing a display device, the pattern line width (CD) is usually 1.5 μm or more. Therefore, for example, if the size of the first transmission control unit 11 is set to CD1 (μm) and CD1 ≧ 3, the width M1 of the marginal region 13 is preferably sufficiently smaller than the size M2 of the main region 14. In the photomask 9 for manufacturing a display device according to this embodiment, the size CD1 of the first transmission control unit 11 is preferably CD1 ≧ 5. That is, most of the first transmission control section 11 of the photomask 9 for display device manufacturing (main region 14) is formed only by the first optical film 3 formed on the transparent substrate 2, and the second transmission control section 12 is formed only by A second optical film 5 formed on the transparent substrate 2 is formed. Therefore, when it becomes the mask 9 for manufacturing a display device, the optical characteristics (transmittance, phase shift amount) of each film can be directly exhibited. That is, the optical characteristics of each of the films such as the first optical film 3 and the second optical film 5 can be directly used as the characteristics of each part of the photomask. Therefore, it is possible to realize a mask 9 for manufacturing a display device that has a large degree of freedom in design and faithfully exerts the characteristics in accordance with the design. <The manufacturing method of the mask for manufacturing a display device of 2nd Embodiment> The manufacturing method of the mask for manufacturing a display device of 2nd Embodiment of this invention is as follows. A manufacturing method of a photomask for display device manufacturing, characterized in that the photomask for display device manufacturing includes a pattern for transfer formed by patterning a first optical film and a second optical film on a transparent substrate, respectively, and the above-mentioned The transfer pattern includes a light-transmitting portion exposing the surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and a second transmission having a portion adjacent to the first transmission control portion. The control unit includes the first optical film formed on the transparent substrate in the first transmission control unit, the second optical film formed on the transparent substrate in the second transmission control unit, and the display device. A manufacturing method of a manufacturing mask includes: a step of preparing a mask base on which the first optical film, an etching mask film, and a first resist film are formed on the transparent substrate; a first resist pattern forming step, The first drawing is performed on the first resist film to form a first resist pattern. The first resist pattern is used as a mask to etch the etching mask film to form an etching mask film pattern. The documenting step is to use the etching mask film pattern as a mask to etch the first optical film to form a first optical film pattern; remove the etching mask film pattern; and include the first optical film pattern. A step of forming the second optical film on the transparent substrate; a second resist pattern forming step of forming a second resist film on the second optical film, performing a second drawing, and forming a second resist pattern; and The second patterning step is to etch the second optical film using the second resist pattern as a mask to form a second optical film pattern. In the first patterning step, only the first optical film is etched. In the second patterning step, only the second optical film is etched, and the second resist pattern covers the formation area of the second transmission control portion, and the adjacent to the edge of the second transmission control portion. The first transmission control unit has a size with a margin that has been increased by a specific width. 4 and 5 are side cross-sectional views showing manufacturing steps of a photomask for manufacturing a display device according to a second embodiment of the present invention. In this second embodiment, parts corresponding to those in the first embodiment described above are denoted by the same reference numerals. (Mask substrate preparation step) First, a mask substrate 1 shown in FIG. 4 (a) is prepared. The photomask base 1 is formed by sequentially stacking a first optical film 3 and an etching mask film 7 on a transparent substrate 2, and further forming a first resist film 4 on the etching mask film 7. The difference from the first embodiment is that an etching mask film 7 is formed. The transparent substrate 2 applied to the mask base 1 of the second embodiment is the same as that of the first embodiment. As in the first embodiment, the first optical film 3 may be a semi-transmissive film having a specific light transmittance with respect to exposed light. In addition, the first optical film 3 may be a phase shift film that has a specific light transmittance with respect to the exposed light and substantially reverses the phase of the exposed light when transmitted. In the second embodiment, the first optical film 3 is also a phase shift film having a phase shift effect. The first optical film 3 may be a film containing any one of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf. The first optical film 3 may be made of any of these compounds (for example, oxide, nitride, and carbonization). Compounds, oxynitrides, carbonitrides, oxycarbonitrides, etc.). In particular, as a preferable material of the first optical film 3, a compound of Si (SiON, etc.), a transition metal silicide (for example, a silicide of Mo, Ti, W, Ta, etc.), or a compound thereof can be used. Examples of the compound of the transition metal silicide include oxides, nitrides, oxynitrides, and carbonitrides. Preferred examples include MoSi oxides, nitrides, oxynitrides, and oxycarbonitrides. In the second embodiment, it is assumed that the first optical film 3 is formed of a film material containing Si, for example, a film material containing MoSi. The etching mask film 7 is preferably formed of a material that is resistant to the etchant of the first optical film 3. That is, the etching mask film 7 and the first optical film 3 are preferably formed of materials having etching selectivity with each other. In the second embodiment, since the first optical film 3 is formed of a film containing Si, the etching mask film 7 can be formed of a film material containing Cr, for example, as a material having etching selectivity with the first optical film 3. Specifically, the etching mask film 7 is preferably one or a plurality of compounds containing Cr, such as Cr oxide, nitride, oxynitride, and carbonitride. In this case, the etching mask film 7 may be a film not containing Si. When the etching mask film 7 is made of a film not containing Si, it is advantageous in that the adhesion with the first resist film 4 is improved as compared with the case where Si is contained. That is, the adhesion between the etching mask film and the resist film is preferably greater than the adhesion between the first optical film 3 and the resist film. The first resist film 4 is the same as the first embodiment described above. (First Resist Pattern Forming Step) Next, as shown in FIG. 4 (b), the first resist film 4 is patterned to form a first resist pattern 4a. In this step, a drawing device is used to draw a desired pattern on the mask substrate 1 (first drawing). The energy lines used for drawing are the same as those in the first embodiment. After the mask base 1 is drawn, development is performed to form a first resist pattern 4a. The first resist pattern 4a has a shape that covers the formation region (B region) of the first transmission control portion, and has an opening in other regions (A region, C region). (Etching mask film pattern forming step) Next, as shown in FIG. 4 (c), the etching mask film 7 is etched by using the first resist pattern 4a as a mask to form an etching mask film pattern 7a. . At this time, the etching mask film 7 exposed from the opening of the first resist pattern 4a is removed by etching. The etching of the etching mask film 7 may be either dry etching or wet etching. In this embodiment, since the etching mask film 7 is formed from a film containing Cr, it is suitable for wet etching using an etching solution for Cr. (First patterning step) Next, the etchant is replaced with the previous step. As shown in FIG. 4 (d), the first optical film 3 is etched by using the etching mask film pattern 7a as a mask to form a first Optical film pattern 3a. At this time, the first optical film 3 exposed from the opening portion of the etching mask film pattern 7a is removed by etching. In this embodiment, the first optical film 3 is formed of a film containing Si (for example, a MoSi-containing film). Therefore, it is preferable to use wet etching using an etching solution containing hydrofluoric acid. The first patterning step is similar to the first embodiment described above, and only the first optical film 3 is used as an etching target. Therefore, the shape of the first optical film pattern 3a or the area of the first transmission control unit is defined at this stage. (First resist stripping step) Next, as shown in FIG. 4 (e), the first resist pattern 4a is peeled. The first resist pattern 4a may be peeled off after the etching mask film pattern 7a is formed and before the first optical film 3 is etched. (Etching mask film pattern removing step) Next, as shown in FIG. 4 (f), the etching mask film pattern 7a is removed. Thereby, the transparent substrate 2 with the 1st optical film pattern 3a can be obtained. (Second Optical Film Forming Step) Next, as shown in FIG. 5 (g), a second optical film 5 is formed on the transparent substrate 2 including the first optical film pattern 3a. The second optical film 5 is applied to a known method such as a sputtering method in the same manner as the first embodiment, and the entire pattern forming region for transfer formed on the transparent substrate 2 is applied. In the second embodiment, as in the first embodiment, the second optical film 5 is a low-phase translucent film. The second optical film 5 can be, for example, a film containing any one of Cr, Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf. Compounds, carbides, oxynitrides, oxynitrides, oxynitrides, etc.) are selected as appropriate. Among them, the first optical film 3 and the second optical film 5 are preferably formed of a material having resistance to each other's etchant. That is, the first optical film 3 and the second optical film 5 are preferably materials having etching selectivity to each other. For example, when the first optical film 3 is a film including any one of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, the second optical film 5 is made of a material different from that. Cr film. Therefore, for example, when a Si-containing material is used for the first optical film 3, it is preferable to use a Cr-containing material for the second optical film 5. If specific examples are given, when a MoSi-containing material is used for the first optical film 3, it is preferable to use a Cr compound for the second optical film 5. Hereinafter, as in the first embodiment, the second resist film forming step (FIG. 5 (h)), the second resist pattern forming step (FIG. 5 (i)), and the second patterning step are sequentially performed. (FIG. 5 (j)) and a second resist peeling step (FIG. 5 (k)), and a photomask 9 for manufacturing a display device is completed. In the method for manufacturing a mask for manufacturing a display device according to the second embodiment, in the etching mask film pattern removing step (FIG. 4 (f)) after the first resist peeling step (FIG. 4 (e)) The etching mask film pattern 7a is removed, but it is not limited to this. For example, by adding a photolithography method step after the first resist stripping step (FIG. 4 (e)), a part of the etching mask film pattern 7a may be left and used for patterning. Specifically, for example, the etching mask film 7 may be used as a light-shielding film, and the etching mask film 7 may be patterned in the above-mentioned photolithography method step, and the area other than the transfer pattern (photomask) may be used. Near the outer edge, etc.), forming a mask pattern, etc. Of course, a part of the etching mask film pattern 7a may be left in a specific part in the transfer pattern. In the manufacturing method of a photomask for manufacturing a display device according to the second embodiment, descriptions that overlap with those of the first embodiment are omitted. Therefore, those described in the manufacturing method of the first embodiment without particular hindrance can be equally applied to the second embodiment. The photomask 9 (FIG. 3) for manufacturing a display device according to the embodiment of the present invention can be manufactured by either the manufacturing method of the first embodiment or the manufacturing method of the second embodiment. In the photomask 9 for manufacturing a display device according to the embodiment of the present invention, the first transmission control unit 11 is formed of only the first optical film 3 and the second transmission control unit 12 on the transparent substrate 2 except for the marginal region 13. Only the second optical film 5 is formed on the transparent substrate 2. Therefore, in the main region 14 of the first transmission control section 11, the optical characteristics of the first optical film 3 are exhibited, and in the second transmission control section 12, the optical characteristics of the second optical film 5 are exhibited. Further, in a portion adjacent to the first transmission control unit 11 and the second transmission control unit 12, in a marginal region 13 which is an edge portion on the side of the first transmission control unit 11, there are a first optical film 3 and a second optical film 5 The resulting narrow buildup. Among them, the layered portion is essentially a portion that functions as a light-shielding portion, so the decrease in light transmittance caused by the layered layer will not be a problem, so it has a clear change in light intensity distribution that can be obtained by the phase shift effect described above advantage. In addition, a mask base 1 for obtaining a mask 9 for manufacturing a display device is a first embodiment in which a first optical film 3 and a first resist film 4 are formed on a transparent substrate 2 (FIG. 1 (a)) In the second embodiment, the configuration of the first optical film 3, the etching mask film 7, and the first resist film 4 is formed on the transparent substrate 2 (FIG. 4 (a)). However, in any of the embodiments, only the first optical film 3 formed on the transparent substrate 2 is an optical film that eventually forms a pattern for transfer. Therefore, as described in the above embodiment, it is advantageous to use the first optical film 3 as a phase shift film. The reason is as follows. Generally speaking, as a market demand for translucent films (low-phase translucent films), there may be various light transmittances, which cannot be manufactured in advance. In contrast, the specifications required by the phase shift film market are approximately fixed. Therefore, as in the embodiment of the present invention, a photomask base 1 formed by forming the first optical film 3 as a phase shift film on a transparent substrate 2 in advance can be used to improve production efficiency in a short delivery time. Meet the needs of mask users. Moreover, according to the manufacturing method of the photomask 9 for manufacturing a display device according to the embodiment of the present invention, the first optical film 3 and the second optical film 5 are each patterned by a step of etching a single film. That is, there is no step of successively etching the two films of the first optical film 3 and the second optical film 5 with the same etchant. Therefore, a transfer pattern with sufficiently high CD accuracy can be formed. Furthermore, the mask 9 for manufacturing a display device obtained by the manufacturing method according to the embodiment of the present invention has the advantage that the phase can be used at the edge of the first transmission control section 11 adjacent to the second transmission control section 12. The offset effect improves the contrast. On the other hand, the optical characteristics obtained from the single film design are accurately exerted on the parts other than the edges. The photomask 9 for manufacturing a display device according to the embodiment of the present invention has the advantage that it is useful as a multi-level photomask for reducing the number of photomasks used in the manufacture of a display device, etc. The shape of the resist pattern on the body becomes a shape with less side tilt due to the phase shift effect described above. Therefore, it is useful for a TFT (Thin Film Transistor) layer of a display device. In this application, a transfer pattern having a shape in which the second transmission control portion 12 is sandwiched by the first transmission control portion 11 in two directions facing each other is used. Especially in such a transfer pattern, the side shape of the resist pattern can be formed with a high contrast by the phase shift effect, which is more effective. The present invention can also be applied to a transfer pattern having a shape in which the second transmission control section 12 is surrounded by the first transmission control section 11. Of course, it can also be used for the use which forms the three-dimensional shape (photosensitive spacer, etc.) with the photosensitive resin used for color filters etc. The present invention can also be implemented as a method for manufacturing a display device including the steps of preparing a mask 9 for manufacturing a display device manufactured by the manufacturing method of the first embodiment or the second embodiment, or the embodiment described above. A mask 9 for manufacturing a display device; and an exposure device to expose a pattern for transfer included in the mask 9 for manufacturing a display device. In the manufacturing method of a display device, it is preferable to use the mask 9 for manufacturing a display device as a multi-step mask. In this case, by exposing the photoresist film on the object to be transferred through the mask 9 for manufacturing a display device mounted on an exposure device, the pattern for transfer of the mask 9 for manufacturing a display device is transferred to Being transferred. As a result, a plurality of three-dimensional shapes having a residual film thickness can be formed on the object to be transferred due to the difference in light transmittance of the light transmitting portion 10, the first transmission control portion 11, and the second transmission control portion 12. Resist pattern. In a manufacturing method of a display device including such steps, it is advantageous to use the photomask 9 for manufacturing a display device. The photomask for manufacturing a display device of the present invention can be preferably used for exposure using an exposure device known as an LCD (Liquid Crystal Display) application or an FPD (Flat Panel Display) application. As such an exposure device, there can be used a projection exposure device that uses, for example, any one of i-line, h-line, and g-line as exposure light, and it is preferable to use i-line and h-line. , G-line all exposed light, and has an optical system with a numerical aperture (NA) of 0.08 to 0.15 and a coherence factor (σ) of about 0.7 to 0.9. Of course, the mask for manufacturing a display device of the present invention can also be used as a mask for proximity exposure. The photomask for manufacturing a display device of the present invention is particularly suitable for manufacturing a display device including a liquid crystal display device, an organic EL display device, and the like. In addition, the photomask for manufacturing a display device of the present invention can be used in various parts of such display devices (contact holes, S (Source) / Drain (Drain) layers of thin-film transistors), and color filters. (For example, a layer for a photosensitive spacer). In addition, the photomask for manufacturing a display device of the present invention may have an additional film or film pattern in addition to the first optical film 3 and the second optical film 5 within a range where the effects of the present invention are exhibited. For example, an optical filter film, a conductive film, an insulating film, an anti-reflection film, or the like may be disposed on the front surface (pattern surface for transfer) or the back surface of the transparent substrate 2.

1‧‧‧光罩基底1‧‧‧ mask base

2‧‧‧透明基板2‧‧‧ transparent substrate

3‧‧‧第1光學膜3‧‧‧The first optical film

3a‧‧‧第1光學膜圖案3a‧‧‧The first optical film pattern

4‧‧‧第1抗蝕膜4‧‧‧ 1st resist film

4a‧‧‧第1抗蝕圖案4a‧‧‧1st resist pattern

5‧‧‧第2光學膜5‧‧‧The second optical film

5a‧‧‧第2光學膜圖案5a‧‧‧The second optical film pattern

6‧‧‧第2抗蝕膜6‧‧‧Second resist film

6a‧‧‧第2抗蝕圖案6a‧‧‧Second resist pattern

7‧‧‧蝕刻遮罩膜7‧‧‧ Etching mask film

7a‧‧‧蝕刻遮罩膜圖案7a‧‧‧Etching mask film pattern

9‧‧‧顯示裝置製造用光罩9‧‧‧ Photomask for display device manufacturing

10‧‧‧透光部10‧‧‧Transmission Department

11‧‧‧第1透過控制部11‧‧‧The first transmission control unit

12‧‧‧第2透過控制部12‧‧‧ The second transmission control unit

13‧‧‧邊際區域13‧‧‧ Marginal area

14‧‧‧主區域14‧‧‧ main area

20‧‧‧光罩基底20‧‧‧ Mask base

100‧‧‧透明基板100‧‧‧ transparent substrate

101‧‧‧半透光膜101‧‧‧ translucent film

101p‧‧‧半透光膜圖案101p‧‧‧ translucent film pattern

102‧‧‧相位偏移調整膜102‧‧‧phase shift adjustment film

102p‧‧‧相位偏移調整膜圖案102p‧‧‧phase shift adjustment film pattern

103‧‧‧遮光膜103‧‧‧Light-shielding film

103p‧‧‧遮光膜圖案103p‧‧‧Shading film pattern

104‧‧‧第1抗蝕膜104‧‧‧The first resist film

104p‧‧‧第1抗蝕圖案104p‧‧‧1st resist pattern

105p‧‧‧第2抗蝕圖案105p‧‧‧Second resist pattern

106p‧‧‧第3抗蝕圖案106p‧‧‧3rd resist pattern

110‧‧‧遮光部110‧‧‧Shading Department

111‧‧‧第1相位偏移部111‧‧‧1st phase shift section

112‧‧‧第2相位偏移部112‧‧‧Second phase shift section

115‧‧‧半透光部115‧‧‧ translucent

120‧‧‧透光部120‧‧‧Light transmission department

200‧‧‧多階光罩200‧‧‧Multi-Order Mask

A‧‧‧區域A‧‧‧Area

B‧‧‧區域B‧‧‧ area

C‧‧‧區域C‧‧‧Area

CD1‧‧‧尺寸CD1‧‧‧size

M1‧‧‧寬度M1‧‧‧Width

M2‧‧‧寬度M2‧‧‧Width

圖1(a)～(e)係表示本發明之第1實施形態之顯示裝置製造用光罩之製造步驟之側剖圖(其一)。 圖2(f)～(i)係表示本發明之第1實施形態之顯示裝置製造用光罩之製造步驟之側剖圖(其二)。 圖3係表示本發明之實施形態之顯示裝置製造用光罩之構成之側剖圖。 圖4(a)～(f)係表示本發明之第2實施形態之顯示裝置製造用光罩之製造步驟之側剖圖(其一)。 圖5(g)～(k)係表示本發明之第2實施形態之顯示裝置製造用光罩之製造步驟之側剖圖(其二)。 圖6係表示專利文獻1中記載之多階光罩之構成之側剖圖。 圖7(a)～(g)係表示專利文獻1中記載之多階光罩之製造步驟之側剖圖。1 (a) to (e) are side cross-sectional views (No. 1) showing manufacturing steps of a photomask for manufacturing a display device according to a first embodiment of the present invention. 2 (f) to (i) are side cross-sectional views (No. 2) showing manufacturing steps of a photomask for manufacturing a display device according to a first embodiment of the present invention. 3 is a side cross-sectional view showing the configuration of a photomask for manufacturing a display device according to an embodiment of the present invention. 4 (a) to 4 (f) are side cross-sectional views (No. 1) showing manufacturing steps of a photomask for manufacturing a display device according to a second embodiment of the present invention. 5 (g) to (k) are side sectional views (No. 2) showing manufacturing steps of a photomask for manufacturing a display device according to a second embodiment of the present invention. FIG. 6 is a side cross-sectional view showing a configuration of a multi-step mask described in Patent Document 1. FIG. 7 (a) to 7 (g) are side cross-sectional views showing manufacturing steps of the multi-step mask described in Patent Document 1. FIG.

Claims (21)

一種顯示裝置製造用光罩之製造方法，其特徵在於： 該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，且上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括： 準備於上述透明基板上形成有上述第1光學膜及第1抗蝕膜之光罩基底之步驟； 對上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案之第1抗蝕圖案形成步驟； 以上述第1抗蝕圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案之第1圖案化步驟； 於包括上述第1光學膜圖案之上述透明基板上形成上述第2光學膜之步驟； 於上述第2光學膜上形成第2抗蝕膜，且進行第2繪圖，形成第2抗蝕圖案之第2抗蝕圖案形成步驟；及 以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案之第2圖案化步驟； 於上述第1圖案化步驟中，僅蝕刻上述第1光學膜， 於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且， 上述第2抗蝕圖案覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側，具有已增加特定寬度之邊際之尺寸。A manufacturing method of a photomask for display device manufacturing, characterized in that the photomask for manufacturing display device includes a transfer pattern formed by patterning a first optical film and a second optical film on a transparent substrate, and the above-mentioned The transfer pattern includes a light-transmitting portion exposing the surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and a second transmission having a portion adjacent to the first transmission control portion. The control unit includes the first optical film formed on the transparent substrate in the first transmission control unit, the second optical film formed on the transparent substrate in the second transmission control unit, and the display device. A manufacturing method of a manufacturing mask includes: a step of preparing a mask base on which the first optical film and the first resist film are formed on the transparent substrate; performing a first drawing on the first resist film to form a first mask; A first resist pattern forming step of a resist pattern; using the first resist pattern as a mask, etching the first optical film to form a first patterning step of the first optical film pattern; including the first optical pattern; A step of forming the second optical film on the transparent substrate of the film pattern; a step of forming a second resist pattern on the second optical film; and performing a second drawing to form a second resist pattern of the second resist pattern And a second patterning step of etching the second optical film using the second resist pattern as a mask to form a second optical film pattern; in the first patterning step, only etching the first optical film, In the second patterning step, only the second optical film is etched, and the second resist pattern covers the formation area of the second transmission control portion, and is adjacent to an edge of the second transmission control portion. The above-mentioned first transmission control unit has a size that has a margin of a specific width. 如請求項1之顯示裝置製造用光罩之製造方法，其中上述第1光學膜包含Cr，且 上述第2光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者。For example, the manufacturing method of a photomask for a display device according to claim 1, wherein the first optical film includes Cr, and the second optical film includes one of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf. Either. 一種顯示裝置製造用光罩之製造方法，其特徵在於： 該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，且上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括： 準備於上述透明基板上形成有上述第1光學膜、蝕刻遮罩膜、及第1抗蝕膜之光罩基底之步驟； 對上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案之第1抗蝕圖案形成步驟； 以上述第1抗蝕圖案為遮罩，蝕刻上述蝕刻遮罩膜，形成蝕刻遮罩膜圖案之步驟； 以上述蝕刻遮罩膜圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案之第1圖案化步驟； 將上述蝕刻遮罩膜圖案去除之步驟； 於包括上述第1光學膜圖案之上述透明基板上形成上述第2光學膜之步驟； 於上述第2光學膜上形成第2抗蝕膜，且進行第2繪圖，形成第2抗蝕圖案之第2抗蝕圖案形成步驟；及 以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案之第2圖案化步驟； 於上述第1圖案化步驟中，僅蝕刻上述第1光學膜， 於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且， 上述第2抗蝕圖案覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側，具有已增加特定寬度之邊際之尺寸。A manufacturing method of a photomask for display device manufacturing, characterized in that the photomask for manufacturing display device includes a transfer pattern formed by patterning a first optical film and a second optical film on a transparent substrate, and the above-mentioned The transfer pattern includes a light-transmitting portion exposing the surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and a second transmission having a portion adjacent to the first transmission control portion. The control unit includes the first optical film formed on the transparent substrate in the first transmission control unit, the second optical film formed on the transparent substrate in the second transmission control unit, and the display device. A manufacturing method of a manufacturing mask includes: a step of preparing a mask base on which the first optical film, an etching mask film, and a first resist film are formed on the transparent substrate; and performing a first step on the first resist film. 1 drawing, a first resist pattern forming step of forming a first resist pattern; using the first resist pattern as a mask, etching the etching mask film to form an etching mask film pattern; using the etching The mask film pattern is a mask, and the first optical film pattern is etched to form a first patterning step of the first optical film pattern. The step of removing the etching mask film pattern is performed on the transparent film including the first optical film pattern. A second resist pattern forming step of forming the second optical film on the substrate; forming a second resist film on the second optical film; and performing a second drawing to form a second resist pattern; and 2 The second resist pattern is a mask, and the second optical film is etched to form a second patterning step of the second optical film pattern. In the first patterning step, only the first optical film is etched to the second pattern. In the conversion step, only the second optical film is etched, and the second resist pattern covers the formation region of the second transmission control portion, and the first transmission control adjacent to the edge of the second transmission control portion is adjacent. The side has dimensions with a margin that has been increased by a specific width. 如請求項3之顯示裝置製造用光罩之製造方法，其中上述第1光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者，且 上述第2光學膜包含Cr。The method for manufacturing a photomask for manufacturing a display device according to claim 3, wherein the first optical film includes any one of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, and the second optical The film contains Cr. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中上述第1光學膜與上述第2光學膜對於彼此之蝕刻劑具有耐受性。The method for manufacturing a photomask for manufacturing a display device according to any one of claims 1 to 4, wherein the first optical film and the second optical film are resistant to each other's etchant. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T1(%)，相位偏移量設為1(度)時， 2≦T1≦10 150≦1≦210。The method for manufacturing a mask for manufacturing a display device according to any one of claims 1 to 4, wherein a wavelength of light representing a wavelength of light used for exposing the first optical film to the exposure of the mask for manufacturing a display device is The transmittance is set to T1 (%), and the phase shift amount is set to 1 (degrees), 2 ≦ T1 ≦ 10 150 ≦ 1 ≦ 210. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T2(%)，相位偏移量設為2(度)時， 10≦T2≦60 0＜2≦90。The method for manufacturing a mask for manufacturing a display device according to any one of claims 1 to 4, wherein a wavelength of light representing a wavelength of light used for exposing the second optical film to the exposure of the mask for manufacturing a display device is described. The transmittance is set to T2 (%), and the phase shift amount is set to 2 (degrees), 10 ≦ T2 ≦ 60 0 < 2 ≦ 90. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中於將上述邊際區域之寬度設為M1(μm)時， 0.2≦M1≦1.0。The manufacturing method of the photomask for manufacturing a display device according to any one of claims 1 to 4, wherein when the width of the marginal region is M1 (μm), 0.2 ≦ M1 ≦ 1.0. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中上述第1透過控制部之邊際區域與上述第2透過控制部對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的相位差δ(度)為 150≦δ≦210。The method for manufacturing a mask for manufacturing a display device according to any one of claims 1 to 4, wherein the marginal area of the first transmission control section and the exposure of the second transmission control section to the mask for manufacturing a display device are used. The phase difference δ (degrees) of the representative wavelength light of the exposed light is 150 ≦ δ ≦ 210. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中上述轉印用圖案包括自對向之兩方向由上述第1透過控制部夾持之第2透過控制部，且 上述第2抗蝕圖案覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之2個上述第1透過控制部側，具有已增加特定寬度之邊際之尺寸。The method for manufacturing a photomask for manufacturing a display device according to any one of claims 1 to 4, wherein the transfer pattern includes a second transmission control section sandwiched by the first transmission control section in two directions facing each other, In addition, the second resist pattern covers the formation area of the second transmission control section, and the two sides of the first transmission control section adjacent to the edge of the second transmission control section have a margin that has been increased by a specific width. size. 一種顯示裝置製造用光罩，其包括具有於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之透光部、第1透過控制部及第2透過控制部之轉印用圖案，且 上述轉印用圖案包括上述透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部， 上述透光部係露出上述透明基板之表面而成， 於上述第1透過控制部，於上述透明基板上形成上述第1光學膜， 於上述第2透過控制部，於上述透明基板上形成上述第2光學膜， 上述第1透過控制部係於沿著與上述第2透過控制部相鄰之邊緣之特定寬度之部分，具有上述第1光學膜與上述第2光學膜進行積層之特定寬度之邊際區域，並且於上述邊際區域以外之部分，具有僅形成有上述第1光學膜之主區域。A photomask for manufacturing a display device includes a light-transmitting portion formed by patterning a first optical film and a second optical film on a transparent substrate, a first transmission control portion, and a second transmission control portion. A pattern, and the transfer pattern includes the light transmitting portion, a first transmission control portion having a portion adjacent to the light transmitting portion, and a second transmission control portion having a portion adjacent to the first transmission control portion The light transmitting portion is formed by exposing the surface of the transparent substrate, and the first optical control film is formed on the transparent substrate in the first transmission control portion, and the second transmission control portion is formed on the transparent substrate. In the second optical film, the first transmission control portion is a portion of a specific width along an edge adjacent to the second transmission control portion, and has a specific width in which the first optical film and the second optical film are laminated. The marginal region has a main region where only the first optical film is formed in a portion other than the marginal region. 如請求項11之顯示裝置製造用光罩，其中上述第1光學膜包含Cr，且 上述第2光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者。The photomask for manufacturing a display device according to claim 11, wherein the first optical film includes Cr and the second optical film includes any of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf . 如請求項11之顯示裝置製造用光罩，其中上述第1光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者，且 上述第2光學膜包含Cr。The photomask for manufacturing a display device according to claim 11, wherein the first optical film includes any one of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, and the second optical film includes Cr . 如請求項11至13中任一項之顯示裝置製造用光罩，其中上述第1光學膜與上述第2光學膜對於彼此之蝕刻劑具有耐受性。The photomask for manufacturing a display device according to any one of claims 11 to 13, wherein the first optical film and the second optical film are resistant to each other's etchant. 如請求項11至13中任一項之顯示裝置製造用光罩，其中於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T1(%)，相位偏移量設為1(度)時， 2≦T1≦10 150≦1≦210。The photomask for manufacturing a display device according to any one of claims 11 to 13, wherein a light transmittance of a representative wavelength of light used for exposing the first optical film to the photomask for manufacturing the display device is transmitted. Set to T1 (%), and the phase shift amount is set to 1 (degrees), 2 ≦ T1 ≦ 10 150 ≦ 1 ≦ 210. 如請求項11至13中任一項之顯示裝置製造用光罩，其中於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T2(%)，相位偏移量設為2(度)時， 10≦T2≦60 0＜2≦90。The photomask for manufacturing a display device according to any one of claims 11 to 13, wherein a light transmittance of a representative wavelength of light used for exposing the second optical film to the photomask for manufacturing the display device is transmitted. Set to T2 (%), and the phase shift amount is set to 2 (degrees), 10 ≦ T2 ≦ 60 0 < 2 ≦ 90. 如請求項11至13中任一項之顯示裝置製造用光罩，其中於將上述邊際區域之寬度設為M1(μm)時， 0.2≦M1≦1.0。The photomask for manufacturing a display device according to any one of claims 11 to 13, wherein when the width of the marginal region is M1 (μm), 0.2 ≦ M1 ≦ 1.0. 如請求項11至13中任一項之顯示裝置製造用光罩，其中上述第1透過控制部之邊際區域與上述第2透過控制部對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的相位差δ(度)為 150≦δ≦210。The mask for manufacturing a display device according to any one of claims 11 to 13, wherein the marginal area of the first transmission control section and the exposure of the second transmission control section for exposure of the mask for manufacturing a display device are The phase difference δ (degrees) of light of a representative wavelength of light is 150 ≦ δ ≦ 210. 如請求項11至13中任一項之顯示裝置製造用光罩，其中上述轉印用圖案包括自對向之兩方向由上述第1透過控制部夾持之第2透過控制部，且於上述第1透過控制部與上述第2透過控制部各自之相鄰部分中之上述第1透過控制部側，形成有上述邊際區域。The photomask for manufacturing a display device according to any one of claims 11 to 13, wherein the transfer pattern includes a second transmission control section sandwiched by the first transmission control section in two directions facing each other, and The marginal region is formed on the first transmission control unit side of each of the adjacent portions of the first transmission control unit and the second transmission control unit. 一種顯示裝置之製造方法，其特徵在於包括以下步驟： 準備利用如請求項1至4中任一項之製造方法製造之顯示裝置製造用光罩；及 藉由曝光裝置而將上述顯示裝置製造用光罩所具有之轉印用圖案曝光。A manufacturing method of a display device, comprising the following steps: preparing a photomask for manufacturing a display device manufactured by the manufacturing method according to any one of claims 1 to 4; and manufacturing the display device by using an exposure device. Exposure of the transfer pattern possessed by the photomask. 一種顯示裝置之製造方法，其特徵在於包括以下步驟： 準備如請求項11至13中任一項之顯示裝置製造用光罩；及 藉由曝光裝置而將上述顯示裝置製造用光罩所具有之轉印用圖案曝光。A method for manufacturing a display device, comprising the following steps: preparing a photomask for manufacturing a display device according to any one of claims 11 to 13; and using the exposure device to provide the photomask for manufacturing the display device with The pattern for transfer is exposed.
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