TWI724233B - Method of manufacturing a photomask, photomask, and method of manufacturing a display device - Google Patents

Method of manufacturing a photomask, photomask, and method of manufacturing a display device Download PDF

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TWI724233B
TWI724233B TW106130468A TW106130468A TWI724233B TW I724233 B TWI724233 B TW I724233B TW 106130468 A TW106130468 A TW 106130468A TW 106130468 A TW106130468 A TW 106130468A TW I724233 B TWI724233 B TW I724233B
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optical film
manufacturing
film
display device
photomask
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TW106130468A
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Chinese (zh)
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TW201823856A (en
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金台勳
李錫薰
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日商Ｈｏｙａ股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

To realize a photomask which is for use in manufacturing a display device and which is exactly as designed and takes advantages of optical characteristics of individual films without changing them. This invention provides a method of manufacturing a photomask which is for use in manufacturing a display device and which has a transfer pattern including a light transmitting portion, a first light transmission control portion, and a second light transmission control portion. The method includes a step of preparing a photomask blank provided with a first optical film and a first resist film and thereafter carrying out first lithography on the first resist film to form a first resist pattern; a step of etching only the first optical film by using the first resist pattern to form a first optical film pattern, a step of forming a second optical film on a transparent substrate, thereafter forming a second resist film on the second optical film, and carrying out second lithography to form a second resist pattern, and a step of etching only the second optical film by using the second resist pattern to form a second optical film pattern. The second resist pattern has a size to cover a region where the second light transmission control portion is to be formed, with the addition of a margin of a predetermined width on a side of the first light transmission control portion adjacent to an edge of the second light transmission control portion.

Description

光罩之製造方法、光罩、及顯示裝置之製造方法Manufacturing method of photomask, photomask, and manufacturing method of display device

本發明係關於一種用以製造電子器件之光罩，尤其關於一種對以液晶面板或有機電致發光(Electroluminescence，EL)面板為代表之顯示裝置(平板顯示器)之製造有用之光罩及其製造方法、以及使用該光罩之顯示裝置之製造方法。 The present invention relates to a photomask for manufacturing electronic devices, and more particularly to a photomask and its manufacturing useful for the manufacture of display devices (flat panel displays) represented by liquid crystal panels or organic electroluminescence (EL) panels Method, and manufacturing method of a display device using the photomask.

專利文獻1中記載有關於一種多階光罩之技術，該多階光罩係於透明基板上形成有具有遮光部、半透光部及透光部之轉印用圖案者，且可將具有急遽上升之形狀之抗蝕圖案形成於被轉印體上。 Patent Document 1 describes a technology related to a multi-stage photomask. The multi-stage photomask is formed on a transparent substrate with a pattern for transfer having a light-shielding portion, a semi-transmissive portion, and a light-transmitting portion. A resist pattern of a sharply rising shape is formed on the body to be transferred.

圖6係表示專利文獻1中記載之多階光罩之構成之側剖圖。 FIG. 6 is a side cross-sectional view showing the structure of the multi-stage mask described in Patent Document 1. FIG.

該多階光罩200包括具有遮光部110、半透光部115及透光部120之轉印用圖案。遮光部110係於透明基板100上將半透光膜101、相位偏移調整膜102及遮光膜103依序積層而成。半透光部115係於透明基板100上形成半透光膜101而成。透光部120係露出有透明基板100。於遮光部110與透光部120之邊界，形成有半透光膜101上之相位偏移調整膜102局部地露出之第1相位偏移部111，且於遮光部110與半透光部115之邊界，形成有半 透光膜101上之相位偏移調整膜102局部地露出之第2相位偏移部112。 The multi-step mask 200 includes a pattern for transfer having a light-shielding portion 110, a semi-transmissive portion 115 and a light-transmitting portion 120. The light-shielding portion 110 is formed by sequentially laminating a semi-transparent film 101, a phase shift adjustment film 102, and a light-shielding film 103 on a transparent substrate 100. The translucent portion 115 is formed by forming a translucent film 101 on the transparent substrate 100. The transparent portion 120 exposes the transparent substrate 100. At the boundary between the light-shielding part 110 and the light-transmitting part 120, there is formed a first phase-shift part 111 in which the phase shift adjustment film 102 on the semi-transmissive film 101 is partially exposed, and is formed between the light-shielding part 110 and the semi-transmitting part 115 Of the boundary, forming a half The second phase shift portion 112 where the phase shift adjustment film 102 on the light-transmitting film 101 is partially exposed.

於上述多階光罩200中，透過透光部120之曝光之光與透過第1相位偏移部111之曝光之光進行干擾，並且透過半透光部115之曝光之光與透過第2相位偏移部112之曝光之光進行干擾。藉此，邊界部分之曝光之光相互抵消。因此，可使形成於被轉印體上之抗蝕圖案之側壁成為急遽上升之形狀。 In the above-mentioned multi-step mask 200, the exposure light that passes through the light-transmitting portion 120 interferes with the exposure light that passes through the first phase shift portion 111, and the exposure light that passes through the semi-transmissive portion 115 and the second phase are transmitted The exposure light of the offset portion 112 interferes. In this way, the exposure light of the boundary part cancels each other out. Therefore, the side wall of the resist pattern formed on the transferred body can be formed into a sharply rising shape.

圖7係表示專利文獻1中記載之多階光罩之製造步驟之側剖圖。 FIG. 7 is a side cross-sectional view showing the manufacturing steps of the multi-stage mask described in Patent Document 1. FIG.

(光罩基底準備步驟) (Preparation steps for mask substrate)

首先，準備於透明基板100上依序形成有半透光膜101、相位偏移調整膜102、遮光膜103，且於最上層形成有第1抗蝕膜104之光罩基底20(圖7(a))。 First, prepare a photomask base 20 in which a translucent film 101, a phase shift adjustment film 102, and a light-shielding film 103 are sequentially formed on a transparent substrate 100, and a first resist film 104 is formed on the uppermost layer (FIG. 7( a)).

(第1抗蝕圖案形成步驟) (The first resist pattern formation step)

繼而，對光罩基底20實施繪圖、顯影，形成將遮光部110(圖6)之形成區域覆蓋之第1抗蝕圖案104p。 Then, drawing and development are performed on the photomask base 20 to form a first resist pattern 104p covering the formation area of the light-shielding portion 110 (FIG. 6).

(第1蝕刻步驟) (1st etching step)

繼而，以第1抗蝕圖案104p為遮罩，蝕刻遮光膜103，形成遮光膜圖案103p(圖7(b))。 Then, using the first resist pattern 104p as a mask, the light-shielding film 103 is etched to form a light-shielding film pattern 103p (FIG. 7(b)).

(第2抗蝕膜形成步驟) (Second resist film formation step)

繼而，將第1抗蝕圖案104p去除後，於具有遮光膜圖案103p及露出之相位偏移調整膜102之光罩基底20上之整面，形成第2抗蝕膜105。 Then, after removing the first resist pattern 104p, a second resist film 105 is formed on the entire surface of the mask base 20 having the light-shielding film pattern 103p and the exposed phase shift adjustment film 102.

(第2抗蝕圖案形成步驟) (Second resist pattern formation step)

繼而，將第2抗蝕膜105進行繪圖、顯影，形成將遮光部110之形成區域、位於遮光部110與透光部120之邊界部分之第1相位偏移部111之形成 區域、及位於遮光部110與半透光部115之邊界部分之第2相位偏移部112之形成區域分別覆蓋的第2抗蝕圖案105p(圖6、圖7(c))。 Then, the second resist film 105 is drawn and developed to form the formation area of the light-shielding part 110 and the first phase shift part 111 located at the boundary between the light-shielding part 110 and the light-transmitting part 120 The second resist pattern 105p covers the area and the formation area of the second phase shift portion 112 located at the boundary between the light shielding portion 110 and the semi-transmissive portion 115 (FIG. 6, FIG. 7(c)).

(第2蝕刻步驟) (2nd etching step)

繼而，以第2抗蝕圖案105p為遮罩，蝕刻相位偏移調整膜102，形成相位偏移調整膜圖案102p，並且形成半透光部115、第1相位偏移部111及第2相位偏移部112(圖6、圖7(d))。 Then, using the second resist pattern 105p as a mask, the phase shift adjustment film 102 is etched to form the phase shift adjustment film pattern 102p, and the semi-transparent portion 115, the first phase shift portion 111, and the second phase shift portion are formed. The moving part 112 (FIG. 6, FIG. 7(d)).

(第3抗蝕膜形成步驟) (3rd resist film formation step)

繼而，將第2抗蝕圖案105p去除後，於具有遮光膜圖案103p、相位偏移調整膜圖案102p、露出之半透光膜101之光罩基底20上之整面，形成第3抗蝕膜106。 Then, after removing the second resist pattern 105p, a third resist film is formed on the entire surface of the mask substrate 20 having the light-shielding film pattern 103p, the phase shift adjusting film pattern 102p, and the exposed semi-transparent film 101 106.

(第3抗蝕圖案形成步驟) (3rd resist pattern formation step)

繼而，將第3抗蝕膜106進行繪圖、顯影，形成將透光部120之形成區域以外之區域覆蓋之第3抗蝕圖案106p(圖7(e))。 Then, the third resist film 106 is drawn and developed to form a third resist pattern 106p covering the area other than the formation area of the light-transmitting portion 120 (FIG. 7(e)).

(第3蝕刻步驟) (3rd etching step)

繼而，以第3抗蝕圖案106p為遮罩，蝕刻半透光膜101，形成半透光膜圖案101p，並且使透明基板100局部地露出，形成透光部120(圖6、圖7(f))。 Then, with the third resist pattern 106p as a mask, the semi-transmissive film 101 is etched to form the semi-transparent film pattern 101p, and the transparent substrate 100 is partially exposed to form the light-transmitting portion 120 (FIGS. 6, 7(f) )).

(第3抗蝕圖案去除步驟) (3rd resist pattern removal step)

繼而，去除第3抗蝕圖案106p，完成多階光罩200之製造(圖7(g))。 Then, the third resist pattern 106p is removed, and the manufacturing of the multi-stage photomask 200 is completed (FIG. 7(g)).

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1] 日本專利特開2011-215614號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2011-215614

多階光罩(或灰階遮罩)之轉印用圖案係具有遮光部、透光部及半透光部等透光率不同之3個以上之部分，藉此，將複數個具有殘餘膜厚之抗蝕圖案形成於被轉印體上。該抗蝕圖案係於形成於被轉印體上之薄膜之加工時用作蝕刻遮罩。於該情形時，使用抗蝕圖案進行第1蝕刻，繼而，將抗蝕圖案進行減膜，減膜後之抗蝕圖案成為與第1蝕刻時不同之形狀。因此，可利用與第1蝕刻時不同形狀之抗蝕圖案進行第2蝕刻。如此，多階光罩亦可稱為具有相當於複數片光罩之功能之光罩，且主要作為可減少顯示裝置之製造所需之光罩之片數者，有助於生產效率之提昇。 The transfer pattern of the multi-level mask (or gray-scale mask) has three or more parts with different light transmittances, such as a light-shielding part, a light-transmitting part, and a semi-transmitting part, thereby removing a plurality of residual films. A thick resist pattern is formed on the body to be transferred. The resist pattern is used as an etching mask during the processing of the thin film formed on the transferred body. In this case, the first etching is performed using the resist pattern, and then the resist pattern is reduced, and the reduced resist pattern has a shape different from that in the first etching. Therefore, the second etching can be performed using a resist pattern of a different shape from that in the first etching. In this way, the multi-stage photomask can also be referred to as a photomask with a function equivalent to a plurality of photomasks, and is mainly used to reduce the number of photomasks required for the manufacture of the display device, which contributes to the improvement of production efficiency.

上述專利文獻1中記載之多階光罩包括不僅具有露出透明基板之透光部、使用遮光膜之遮光部，而且具有使用使曝光之光一部分透過之半透光膜之半透光部的轉印用圖案。因此，例如可藉由適當控制半透光部之透光率，而控制形成於被轉印體上之抗蝕圖案之局部厚度。進而，上述專利文獻1之多階光罩係意圖藉由包括相位偏移部，而利用與和相位偏移部相鄰之透光部或半透光部之邊界處之光之干擾效應，而控制形成於被轉印體上之光強度分佈，抑制所形成之抗蝕圖案之側壁之傾斜。若使用此種光罩，則於欲獲得之器件(顯示器面板等)之製造步驟中，不僅可期待上述生產效率之提昇，而且可期待臨界尺寸(Critical dimension，CD)精度或生產良率之提昇，從而可獲得有利之製造條件。 The multi-step mask described in Patent Document 1 above includes not only a light-transmitting portion exposing a transparent substrate, a light-shielding portion using a light-shielding film, but also a semi-transmitting portion using a translucent film that partially transmits the exposed light. Printing patterns. Therefore, for example, by appropriately controlling the light transmittance of the semi-transmissive portion, the local thickness of the resist pattern formed on the transferred body can be controlled. Furthermore, the multi-stage photomask of Patent Document 1 mentioned above intends to use the interference effect of light at the boundary of the light-transmitting portion or the semi-transmitting portion adjacent to the phase-shifting portion by including the phase shifting portion, and Control the light intensity distribution formed on the transferred body, and suppress the inclination of the side wall of the formed resist pattern. If this kind of photomask is used, in the manufacturing steps of the device (display panel, etc.) to be obtained, not only the above-mentioned production efficiency can be expected to be improved, but also the critical dimension (CD) accuracy or production yield can be expected to be improved , So as to obtain favorable manufacturing conditions.

且說，如圖6中所說明，專利文獻1中記載之多階光罩200係藉由半透光膜101與相位偏移調整膜102之積層而形成相位偏移部111、112。根據該方法，必須按照半透光部115所要求之透光率決定半透光膜101之材料或膜厚，進而，藉由適當選擇積層於該半透光膜101上之相位偏移調整膜 102之原材料或膜厚，而達成相位偏移部111、112所要求之透光率或相位偏移量。然而，此種光罩材料之選擇及設計並非易事。 In addition, as illustrated in FIG. 6, the multi-stage mask 200 described in Patent Document 1 is formed by stacking the semi-transparent film 101 and the phase shift adjusting film 102 to form the phase shift portions 111 and 112. According to this method, the material or film thickness of the semi-transmissive film 101 must be determined according to the required light transmittance of the semi-transmissive part 115, and further, by appropriately selecting the phase shift adjustment film laminated on the semi-transmissive film 101 The raw material or film thickness of 102 achieves the light transmittance or phase shift amount required by the phase shift parts 111 and 112. However, the selection and design of such photomask materials are not easy.

例如於根據半透光部115所要求之透光率，決定半透光膜101之原材料及膜厚之情形時，必須搜尋如可藉由積層於該半透光膜101上而達成適當之光學特性(透光率、相位偏移量)般之相位偏移調整膜102。但因各個膜之透光率及相位偏移量均隨膜厚而變動，故無法分別獨立地控制該等2個光學特性。即，準備以單層之半透光膜101實現具有所需之透光率之半透光部115，進而，藉由該半透光膜101與相位偏移調整膜102之積層而獲得所需之透光率及相位偏移量之膜材料需要較大之開發負擔。不僅如此，半透光部115所要求之透光率係因遮罩使用者所適用之製程或所欲獲得之製品而異，從而必須準備較多之變化。因此，用以藉由單膜與積層膜之同時使用而準確獲得光罩之各規格之設計有時可能產生無法使用之情形。 For example, when determining the raw material and film thickness of the semi-transparent film 101 based on the required light transmittance of the semi-transmissive part 115, it is necessary to search for how to achieve proper optics by laminating the semi-transparent film 101 The phase shift adjustment film 102 has the same characteristics (transmittance, phase shift amount). However, since the light transmittance and phase shift amount of each film vary with the film thickness, it is impossible to independently control these two optical properties. That is, a single-layer semi-transmissive film 101 is prepared to realize the semi-transmissive part 115 with the required light transmittance, and then the desired semi-transmissive film 101 and the phase shift adjustment film 102 are laminated to obtain the desired The light transmittance and phase shift of the film material requires a large development burden. Not only that, the required light transmittance of the semi-transmissive part 115 varies depending on the manufacturing process applicable to the mask user or the product desired to be obtained, so more changes must be prepared. Therefore, the design used to accurately obtain the specifications of the mask by using the single film and the laminated film at the same time may sometimes lead to unusable situations.

因同時使用單膜與積層膜而產生之上述異常係不限於相位偏移遮罩，且即便於使用2個半透光膜且具有透光率不同之第1、第2半透光部之多階光罩中亦同樣可能產生之問題。 The above-mentioned abnormality caused by the simultaneous use of a single film and a laminated film is not limited to the phase shift mask, and even when two semi-transmitting films are used and there are many first and second semi-transmitting parts with different light transmittances The same problem may occur in the step mask.

本發明之目的在於提供一種可將各個膜所具有之光學特性直接活用作光罩之各部分之特性之顯示裝置製造用光罩之製造方法、顯示裝置製造用光罩、及顯示裝置之製造方法。 The object of the present invention is to provide a method for manufacturing a mask for manufacturing a display device, a mask for manufacturing a display device, and a method for manufacturing a display device that can directly utilize the optical characteristics of each film as the characteristics of each part of the mask .

(第1態樣) (First aspect)

本發明之第1態樣係一種顯示裝置製造用光罩之製造方法，其特徵在於：該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜 分別圖案化而形成之轉印用圖案，且上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括：準備於上述透明基板上形成有上述第1光學膜及第1抗蝕膜之光罩基底之步驟；對上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案之第1抗蝕圖案形成步驟；以上述第1抗蝕圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案之第1圖案化步驟；於包括上述第1光學膜圖案之上述透明基板上形成上述第2光學膜之步驟；於上述第2光學膜上形成第2抗蝕膜，且進行第2繪圖，形成第2抗蝕圖案之第2抗蝕圖案形成步驟；及以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案之第2圖案化步驟；於上述第1圖案化步驟中，僅蝕刻上述第1光學膜，於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且，上述第2抗蝕圖案具有覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側增加了特定寬度之邊際之尺寸。 The first aspect of the present invention is a method for manufacturing a photomask for manufacturing a display device, characterized in that the photomask for manufacturing a display device includes forming a first optical film and a second optical film on a transparent substrate. The transfer pattern is formed by patterning, and the transfer pattern includes a light-transmitting portion exposing the surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and The second transmission control section adjacent to the first transmission control section has the first optical film formed on the transparent substrate in the first transmission control section, and the second transmission control section has the transparent film formed on the transparent substrate. The manufacturing method of the second optical film on the substrate and the photomask for manufacturing the display device includes: preparing a photomask base on which the first optical film and the first resist film are formed on the transparent substrate; The first resist film is first drawn to form the first resist pattern forming step of the first resist pattern; using the first resist pattern as a mask, the first optical film is etched to form the first optical film pattern A first patterning step; a step of forming the second optical film on the transparent substrate including the first optical film pattern; forming a second resist film on the second optical film, and performing a second drawing to form a 2 the second resist pattern forming step of the resist pattern; and the second patterning step of etching the second optical film with the second resist pattern as a mask to form the second optical film pattern; in the first pattern In the forming step, only the first optical film is etched, and in the second patterning step, only the second optical film is etched, and the second resist pattern has a formation area covering the second transmission control portion, and The side of the first transmission control portion adjacent to the edge of the second transmission control portion is increased by a margin of a certain width.

(第2態樣) (2nd aspect)

本發明之第2態樣係上述第1態樣中記載之顯示裝置製造用光罩之製造方法，其特徵在於：上述第1光學膜包含Cr，且上述第2光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nh、Hf中之任一者。 A second aspect of the present invention is the method for manufacturing a photomask for manufacturing a display device described in the first aspect, wherein the first optical film includes Cr, and the second optical film includes Si, Mo, Ni , Ta, Zr, Al, Ti, Nh, Hf.

(第3態樣) (3rd aspect)

本發明之第3態樣係一種顯示裝置製造用光罩之製造方法，其特徵在於：該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括：準備於上述透明基板上形成有上述第1光學膜、蝕刻遮罩膜、及第1抗蝕膜之光罩基底之步驟；對上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案之第1抗蝕圖案形成步驟；以上述第1抗蝕圖案為遮罩，蝕刻上述蝕刻遮罩膜，形成蝕刻遮罩膜圖案之步驟；以上述蝕刻遮罩膜圖案為遮罩，蝕刻上述第1光學膜，形成第1光學 膜圖案之第1圖案化步驟；將上述蝕刻遮罩膜圖案去除之步驟；於包括上述第1光學膜圖案之上述透明基板上形成上述第2光學膜之步驟；於上述第2光學膜上形成第2抗蝕膜，且進行第2繪圖，形成第2抗蝕圖案之第2抗蝕圖案形成步驟；及以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案之第2圖案化步驟；於上述第1圖案化步驟中，僅蝕刻上述第1光學膜，於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且，上述第2抗蝕圖案具有覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側增加了特定寬度之邊際之尺寸。 The third aspect of the present invention is a method of manufacturing a photomask for manufacturing a display device, characterized in that the photomask for manufacturing a display device includes patterning the first optical film and the second optical film on a transparent substrate, respectively. The transfer pattern, the transfer pattern includes a light-transmitting portion exposing the surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and a first transmission control portion corresponding to the first transmission control portion The adjacent portion of the second transmission control portion has the first optical film formed on the transparent substrate in the first transmission control portion, and the second transmission control portion has the second transmission control portion formed on the transparent substrate. Optical film, and the manufacturing method of the photomask for manufacturing the display device includes: preparing a photomask base on which the first optical film, the etching mask film, and the first resist film are formed on the transparent substrate; The first resist film is first drawn to form the first resist pattern forming step of the first resist pattern; using the first resist pattern as a mask, the etching mask film is etched to form the etching mask film pattern Step; Use the etching mask film pattern as a mask to etch the first optical film to form a first optical The first patterning step of the film pattern; the step of removing the etching mask film pattern; the step of forming the second optical film on the transparent substrate including the first optical film pattern; forming on the second optical film A second resist pattern forming step of performing a second drawing to form a second resist pattern; and etching the second optical film with the second resist pattern as a mask to form a second optical film The second patterning step of the film pattern; in the first patterning step, only the first optical film is etched, and in the second patterning step, only the second optical film is etched, and the second resist The pattern has a formation area covering the second transmission control portion, and the edge of the first transmission control portion adjacent to the edge of the second transmission control portion is increased by a margin of a certain width.

(第4態樣) (4th aspect)

本發明之第4態樣係上述第3態樣中記載之顯示裝置製造用光罩之製造方法，其特徵在於：上述第1光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者，且上述第2光學膜包含Cr。 The fourth aspect of the present invention is the manufacturing method of the photomask for the display device described in the third aspect, characterized in that the first optical film contains Si, Mo, Ni, Ta, Zr, Al, Ti, Either Nb or Hf, and the second optical film includes Cr.

(第5態樣) (Fifth aspect)

本發明之第5態樣係上述第1至第4態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於：上述第1光學膜與上述第2光學膜對於彼此之蝕刻劑具有耐受性。 A fifth aspect of the present invention is the method for manufacturing a photomask for manufacturing a display device described in any one of the first to fourth aspects, characterized in that the first optical film and the second optical film are opposed to each other The etchant is resistant.

(第6態樣) (6th aspect)

本發明之第6態樣係上述第1至第5態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於：於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T1(%)，相位偏移量設為Φ 1(度)時，2≦T1≦40 A sixth aspect of the present invention is the method for manufacturing a photomask for manufacturing a display device described in any one of the first to fifth aspects, and is characterized in that the first optical film is used for manufacturing the display device. When the transmittance of the representative wavelength of the light used in the exposure of the mask is set to T1 (%), and the phase shift is set to Φ 1 (degree), 2≦T1≦40

150≦Φ 1≦210。 150≦Φ 1≦210.

(第7態樣) (Seventh aspect)

本發明之第7態樣係上述第1至第6態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於：於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的表面反射率設為SR1(%)時，2≦SR1≦20。 A seventh aspect of the present invention is the method for manufacturing a photomask for manufacturing a display device described in any one of the first to sixth aspects, and is characterized in that the first optical film is used for manufacturing the display device. When the surface reflectivity of the representative wavelength light of the exposure light used in the exposure of the photomask is set to SR1 (%), 2≦SR1≦20.

(第8態樣) (8th aspect)

本發明之第8態樣係上述第1至第7態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於：於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的背面反射率設為BR1(%)時，2≦BR1≦20。 An eighth aspect of the present invention is the method for manufacturing a mask for manufacturing a display device described in any one of the first to seventh aspects, and is characterized in that the first optical film is used for manufacturing the display device. When the back reflectivity of the representative wavelength light of the exposure light used in the exposure of the photomask is set to BR1 (%), 2≦BR1≦20.

(第9態樣) (Ninth aspect)

本發明之第9態樣係上述第1至第8態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於：於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝 光之光之代表波長光的透光率設為T2(%)，且相位偏移量設為Φ 2(度)時，10≦T2≦60 A ninth aspect of the present invention is the method for manufacturing a photomask for manufacturing a display device described in any one of the first to eighth aspects, and is characterized in that the second optical film is used for manufacturing the display device. Exposure used in mask exposure When the transmittance of the representative wavelength of light of light is set to T2 (%), and the phase shift is set to Φ 2 (degrees), 10≦T2≦60

0<Φ 2≦90。 0<Φ 2≦90.

(第10態樣) (10th aspect)

本發明之第10態樣係上述第1至第9態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於：於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的表面反射率設為SR2(%)時，2≦SR2≦20。 A tenth aspect of the present invention is the method for manufacturing a photomask for manufacturing a display device described in any one of the first to ninth aspects, and is characterized in that the second optical film is used for manufacturing the display device. When the surface reflectance of the representative wavelength light of the exposure light used in the exposure of the photomask is set to SR2 (%), 2≦SR2≦20.

(第11態樣) (11th aspect)

本發明之第11態樣係上述第1至第10態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於：於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的背面反射率設為BR2(%)時，2≦BR2≦20。 The eleventh aspect of the present invention is the method for manufacturing a photomask for manufacturing a display device described in any one of the first to tenth aspects, and is characterized in that the second optical film is used for manufacturing the display device. When the back reflectivity of the representative wavelength light of the exposure light used in the exposure of the photomask is set to BR2(%), 2≦BR2≦20.

(第12態樣) (12th aspect)

本發明之第12態樣係上述第1至第11態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於：於將上述邊際區域之寬度設為M1(μm)時，0.2≦M1≦1.0。 A twelfth aspect of the present invention is the method for manufacturing a mask for manufacturing a display device described in any one of the first to eleventh aspects, and is characterized in that the width of the marginal region is M1 (μm) When, 0.2≦M1≦1.0.

(第13態樣) (13th aspect)

本發明之第13態樣係上述第1至第12態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於： 上述第1透過控制部之邊際區域與上述第2透過控制部對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的相位差δ(度)為150≦δ≦210。 A thirteenth aspect of the present invention is the method for manufacturing a mask for manufacturing a display device described in any one of the first to twelfth aspects, and is characterized in that: The phase difference δ (degrees) between the marginal area of the first transmission control section and the representative wavelength light of the exposure light used in the exposure of the display device manufacturing mask by the second transmission control section is 150≦δ≦210.

(第14態樣) (14th aspect)

本發明之第14態樣係上述第1至第13態樣中任一者中記載之顯示裝置製造用光罩之製造方法，其特徵在於：上述轉印用圖案包括自對向之兩方向由上述第1透過控制部夾持之第2透過控制部，且上述第2抗蝕圖案具有覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之2個上述第1透過控制部側增加了特定寬度之邊際之尺寸。 The fourteenth aspect of the present invention is the method for manufacturing a photomask for manufacturing a display device described in any one of the first to thirteenth aspects, and is characterized in that the transfer pattern includes two directions from opposite to each other. The second transmission control portion sandwiched by the first transmission control portion, and the second resist pattern has a formation area covering the second transmission control portion, and two adjacent to the edge of the second transmission control portion The side of the first transmission control portion described above is increased by the size of the margin of the specific width.

(第15態樣) (15th aspect)

本發明之第15態樣係一種顯示裝置製造用光罩，其包括具有於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之透光部、第1透過控制部及第2透過控制部之轉印用圖案，上述轉印用圖案包括上述透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，上述透光部係露出有上述透明基板之表面，於上述第1透過控制部，於上述透明基板上形成上述第1光學膜，於上述第2透過控制部，於上述透明基板上形成上述第2光學膜，上述第1透過控制部係於沿與上述第2透過控制部相鄰之邊緣之特定寬度之部分，具有上述第1光學膜與上述第2光學膜進行積層之特定寬度之 邊際區域，並且於上述邊際區域以外之部分，具有僅形成有上述第1光學膜之主區域。 The fifteenth aspect of the present invention is a photomask for manufacturing a display device, which includes a light-transmitting portion formed by patterning a first optical film and a second optical film on a transparent substrate, a first transmission control portion, and a second optical film. 2 A pattern for transfer through the control portion, the pattern for transfer includes the light-transmitting portion, a first transmission control portion having a portion adjacent to the light-transmitting portion, and a first transmission control portion having a portion adjacent to the first transmission control portion Part of the second transmission control part, the light transmission part is exposed on the surface of the transparent substrate, the first optical film is formed on the first transmission control part, the first optical film is formed on the transparent substrate, and the second transmission control part is The second optical film is formed on the transparent substrate, and the first transmission control portion is located at a portion of a specific width along an edge adjacent to the second transmission control portion, and has the first optical film and the second optical film. Of the specific width of the buildup The marginal region, and a portion other than the marginal region, has a main region in which only the first optical film is formed.

(第16態樣) (16th aspect)

本發明之第16態樣係上述第15態樣中記載之顯示裝置製造用光罩，其特徵在於：上述第1光學膜包含Cr，且上述第2光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者。 A sixteenth aspect of the present invention is the photomask for manufacturing a display device described in the fifteenth aspect, wherein the first optical film includes Cr, and the second optical film includes Si, Mo, Ni, Ta, Any one of Zr, Al, Ti, Nb, and Hf.

(第17態樣) (17th aspect)

本發明之第17態樣係上述第15態樣中記載之顯示裝置製造用光罩，其特徵在於：上述第1光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者，且上述第2光學膜包含Cr。 The 17th aspect of the present invention is the photomask for manufacturing the display device described in the 15th aspect, wherein the first optical film includes Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, Hf Any one of them, and the second optical film includes Cr.

(第18態樣) (18th aspect)

本發明之第18態樣係上述第15至第17態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於：上述第1光學膜與上述第2光學膜對於彼此之蝕刻劑具有耐受性。 An eighteenth aspect of the present invention is the photomask for manufacturing a display device described in any one of the fifteenth to seventeenth aspects, and is characterized in that the first optical film and the second optical film interact with each other as an etchant Tolerable.

(第19態樣) (19th aspect)

本發明之第19態樣係上述第15至第18態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於：於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T1(%)，相位偏移量設為Φ 1(度)時， 2≦T1≦40 A 19th aspect of the present invention is the photomask for manufacturing a display device described in any one of the 15th to 18th aspects, and is characterized in that the first optical film is applied to the photomask for manufacturing the display device. When the transmittance of the representative wavelength light of the exposure light used in the exposure is set to T1 (%), and the phase shift is set to Φ 1 (degree), 2≦T1≦40

150≦Φ 1≦210。 150≦Φ 1≦210.

(第20態樣) (20th aspect)

本發明之第20態樣係上述第15至第19態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於：於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的表面反射率設為SR1(%)時，2≦SR1≦20。 A twentieth aspect of the present invention is the photomask for manufacturing a display device described in any one of the 15th to 19th aspects, and is characterized in that the first optical film is applied to the photomask for manufacturing the display device. When the surface reflectance of the representative wavelength light of the exposure light used in the exposure is set to SR1 (%), 2≦SR1≦20.

(第21態樣) (21st aspect)

本發明之第21態樣係上述第15至第20態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於：於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的背面反射率設為BR1(%)時，2≦BR1≦20。 A 21st aspect of the present invention is the photomask for manufacturing a display device described in any one of the 15th to 20th aspects, and is characterized in that the first optical film is applied to the photomask for manufacturing the display device. When the back reflectivity of the representative wavelength light of the exposure light used in the exposure is set to BR1 (%), 2≦BR1≦20.

(第22態樣) (22nd aspect)

本發明之第22態樣係上述第15至第21態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於：於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T2(%)，相位偏移量設為Φ 2(度)時，10≦T2≦60 A 22nd aspect of the present invention is the photomask for manufacturing a display device described in any one of the 15th to 21st aspects, and is characterized in that the second optical film is applied to the photomask for manufacturing the display device. When the light transmittance of the representative wavelength of the exposure light used in the exposure is set to T2 (%), and the phase shift is set to Φ 2 (degrees), 10≦T2≦60

0<Φ 2≦90。 0<Φ 2≦90.

(第23態樣) (23rd aspect)

本發明之第23態樣係上述第15至第22態樣中任一者中記載之顯示裝 置製造用光罩，其特徵在於：於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的表面反射率設為SR2(%)時，2≦SR2≦20。 The 23rd aspect of the present invention is the display device described in any one of the 15th to 22nd aspects above The photomask for manufacturing the display device is characterized in that when the surface reflectance of the representative wavelength light of the exposure light used in the exposure of the second optical film to the photomask for manufacturing the display device is set to SR2(%), 2 ≦SR2≦20.

(第24態樣) (24th aspect)

本發明之第24態樣係上述第15至第23態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於：於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的背面反射率設為BR2(%)時，2≦BR2≦20。 A twenty-fourth aspect of the present invention is the photomask for manufacturing a display device described in any one of the fifteenth to twenty-third aspects, and is characterized in that the second optical film is applied to the photomask for manufacturing the display device. When the back reflectivity of the representative wavelength light of the exposure light used in the exposure is set to BR2 (%), 2≦BR2≦20.

(第25態樣) (25th aspect)

本發明之第25態樣係上述第15至第24態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於：於將上述邊際區域之寬度設為M1(μm)時，0.2≦M1≦1.0。 A twenty-fifth aspect of the present invention is the mask for manufacturing a display device described in any one of the fifteenth to twenty-fourth aspects, and is characterized in that when the width of the marginal region is M1 (μm), 0.2 ≦M1≦1.0.

(第26態樣) (26th aspect)

本發明之第26態樣係上述第15至第25態樣中任一者中記載之顯示裝置製造用光罩，其特徵在於：上述第1透過控制部之邊際區域與上述第2透過控制部對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的相位差δ(度)為150≦δ≦210。 A twenty-sixth aspect of the present invention is the photomask for manufacturing a display device described in any one of the fifteenth to twenty-fifth aspects, and is characterized in that the marginal area of the first transmission control portion and the second transmission control portion The phase difference δ (degrees) of the representative wavelength light of the exposure light used in the exposure of the photomask for manufacturing the display device is 150≦δ≦210.

(第27態樣) (27th aspect)

本發明之第27態樣係上述第15至第26態樣中任一者中記載之顯示裝 置製造用光罩，其特徵在於：上述轉印用圖案包括自對向之兩方向由上述第1透過控制部夾持之第2透過控制部，且於上述第1透過控制部與上述第2透過控制部各自之相鄰部分中之上述第1透過控制部側，形成有上述邊際區域。 The 27th aspect of the present invention is the display device described in any one of the 15th to 26th aspects above A photomask for manufacturing a set, wherein the transfer pattern includes a second transmission control portion sandwiched by the first transmission control portion from two opposite directions, and the first transmission control portion and the second transmission control portion are interposed between the first transmission control portion and the second transmission control portion. The marginal area is formed on the side of the first transmission control portion in the adjacent portions of the respective transmission control portions.

(第28態樣) (The 28th aspect)

本發明之第28態樣係一種顯示裝置之製造方法，其特徵在於包括以下步驟：準備利用上述第1至第14態樣中任一者中記載之製造方法製造之顯示裝置製造用光罩；及藉由曝光裝置將上述顯示裝置製造用光罩所具有之轉印用圖案曝光。 A 28th aspect of the present invention is a method for manufacturing a display device, which is characterized by comprising the following steps: preparing a mask for manufacturing a display device manufactured by the manufacturing method described in any one of the first to 14th aspects; And exposing the transfer pattern possessed by the photomask for manufacturing the display device with an exposure device.

(第29態樣) (The 29th aspect)

本發明之第29態樣係一種顯示裝置之製造方法，其特徵在於包括以下步驟：準備上述第15至第27態樣中任一者中記載之顯示裝置製造用光罩；及藉由曝光裝置而將上述顯示裝置製造用光罩所具有之轉印用圖案曝光。 A 29th aspect of the present invention is a method for manufacturing a display device, which is characterized by including the following steps: preparing a mask for manufacturing the display device described in any one of the 15th to 27th aspects; and using an exposure device Then, the transfer pattern included in the mask for manufacturing the display device is exposed.

根據本發明，因可將各個膜所具有之光學特性直接活用作光罩之各部分之特性，故可實現一種設計自由度較大且忠實地發揮符合設計之特性之顯示裝置製造用光罩。 According to the present invention, since the optical characteristics of each film can be directly utilized as the characteristics of each part of the photomask, it is possible to realize a photomask for display device manufacturing that has a greater degree of design freedom and faithfully exhibits the features that match the design.

1:光罩基底 1: Mask base

2:透明基板 2: Transparent substrate

3:第1光學膜 3: The first optical film

3a:第1光學膜圖案 3a: The first optical film pattern

4:第1抗蝕膜 4: The first resist film

4a:第1抗蝕圖案 4a: The first resist pattern

5:第2光學膜 5: The second optical film

5a:第2光學膜圖案 5a: The second optical film pattern

6:第2抗蝕膜 6: The second resist film

6a:第2抗蝕圖案 6a: The second resist pattern

7:蝕刻遮罩膜 7: Etching mask film

7a:蝕刻遮罩膜圖案 7a: Etching mask film pattern

9:顯示裝置製造用光罩 9: Mask for display device manufacturing

10:透光部 10: Transmitting part

11:第1透過控制部 11: The first transmission control unit

12:第2透過控制部 12: The second transmission control part

13:邊際區域 13: Marginal area

14:主區域 14: Main area

20:光罩基底 20: Mask base

100:透明基板 100: Transparent substrate

101:半透光膜 101: semi-transmissive film

101p:半透光膜圖案 101p: semi-transmissive film pattern

102:相位偏移調整膜 102: Phase shift adjustment film

102p:相位偏移調整膜圖案 102p: Phase shift adjustment film pattern

103:遮光膜 103: Shading film

103p:遮光膜圖案 103p: shading film pattern

104:第1抗蝕膜 104: The first resist film

104p:第1抗蝕圖案 104p: 1st resist pattern

105p:第2抗蝕圖案 105p: 2nd resist pattern

106p:第3抗蝕圖案 106p: 3rd resist pattern

110:遮光部 110: Shading part

111:第1相位偏移部 111: The first phase shift part

112:第2相位偏移部 112: The second phase shift part

115:半透光部 115: translucent part

120:透光部 120: Transmitting part

200:多階光罩 200: Multi-stage mask

A:區域 A: area

B:區域 B: area

C:區域 C: area

CD1:尺寸 CD1: size

M1:寬度 M1: width

M2:寬度 M2: width

圖1(a)~(e)係表示本發明之第1實施形態之顯示裝置製造用光罩之製造步驟之側剖圖(其一)。 1(a) to (e) are side cross-sectional views showing the manufacturing steps of the mask for manufacturing the display device according to the first embodiment of the present invention (Part 1).

圖2(f)~(i)係表示本發明之第1實施形態之顯示裝置製造用光罩之製造步驟之側剖圖(其二)。 2(f)~(i) are side cross-sectional views showing the manufacturing steps of the mask for manufacturing the display device according to the first embodiment of the present invention (Part 2).

圖3係表示本發明之實施形態之顯示裝置製造用光罩之構成之側剖圖。 Fig. 3 is a side sectional view showing the structure of a mask for manufacturing a display device according to an embodiment of the present invention.

圖4(a)~(f)係表示本發明之第2實施形態之顯示裝置製造用光罩之製造步驟之側剖圖(其一)。 4(a) to (f) are side cross-sectional views showing the manufacturing steps of the mask for manufacturing the display device according to the second embodiment of the present invention (Part 1).

圖5(g)~(k)係表示本發明之第2實施形態之顯示裝置製造用光罩之製造步驟之側剖圖(其二)。 5(g) to (k) are side cross-sectional views showing the manufacturing steps of the mask for manufacturing the display device according to the second embodiment of the present invention (Part 2).

圖6係表示專利文獻1中記載之多階光罩之構成之側剖圖。 FIG. 6 is a side cross-sectional view showing the structure of the multi-stage mask described in Patent Document 1. FIG.

圖7(a)~(g)係表示專利文獻1中記載之多階光罩之製造步驟之側剖圖。 7(a) to (g) are side cross-sectional views showing the manufacturing steps of the multi-stage mask described in Patent Document 1. FIG.

以下，一面參照圖式，一面對本發明之實施形態詳細地進行說明。 Hereinafter, the embodiments of the present invention will be described in detail while referring to the drawings.

<第1實施形態之顯示裝置製造用光罩之製造方法> <The manufacturing method of the mask for manufacturing a display device of 1st Embodiment>

本發明之第1實施形態之顯示裝置製造用光罩之製造方法如下所述。 The manufacturing method of the mask for manufacturing a display device of the first embodiment of the present invention is as follows.

一種顯示裝置製造用光罩之製造方法，其特徵在於：該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，且上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形 成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括：準備於上述透明基板上形成有上述第1光學膜及第1抗蝕膜之光罩基底之步驟；對上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案之第1抗蝕圖案形成步驟；以上述第1抗蝕圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案之第1圖案化步驟；於包括上述第1光學膜圖案之上述透明基板上形成上述第2光學膜之步驟；於上述第2光學膜上形成第2抗蝕膜，且進行第2繪圖，形成第2抗蝕圖案之第2抗蝕圖案形成步驟；及以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案之第2圖案化步驟；於上述第1圖案化步驟中，僅蝕刻上述第1光學膜，於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且，上述第2抗蝕圖案具有覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側增加了特定寬度之邊際之尺寸。 A method for manufacturing a photomask for manufacturing a display device, characterized in that the photomask for manufacturing a display device includes a transfer pattern formed by patterning a first optical film and a second optical film on a transparent substrate, and the above The transfer pattern includes a light-transmitting portion exposing the surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and a second transmission control portion having a portion adjacent to the first transmission control portion The control section has the first optical film formed on the transparent substrate in the first transmission control section, and the second transmission control section has a shape The second optical film is formed on the transparent substrate, and the manufacturing method of the photomask for manufacturing the display device includes: preparing a photomask base on which the first optical film and the first resist film are formed on the transparent substrate. Step: Perform a first drawing on the first resist film to form a first resist pattern forming step; using the first resist pattern as a mask, etching the first optical film to form a first A first patterning step of an optical film pattern; a step of forming the second optical film on the transparent substrate including the first optical film pattern; forming a second resist film on the second optical film, and proceeding to the second Drawing, forming a second resist pattern forming a second resist pattern; and using the second resist pattern as a mask, etching the second optical film to form a second patterning step of the second optical film pattern; In the first patterning step, only the first optical film is etched, and in the second patterning step, only the second optical film is etched, and the second resist pattern has a layer covering the second transmission control portion. A region is formed, and the side of the first transmission control portion adjacent to the edge of the second transmission control portion is increased by a margin of a certain width.

圖1及圖2係表示本發明之第1實施形態之顯示裝置製造用光罩之製造步驟之側剖圖。 1 and 2 are side cross-sectional views showing the manufacturing steps of the mask for manufacturing the display device according to the first embodiment of the present invention.

再者，圖中之A區域係對應於透光部之區域，B區域係對應於第1透過控制部之區域，C區域係對應於第2透過控制部之區域。換言之，A區域 係預定形成透光部之區域，B區域係預定形成第1透過控制部之區域，C區域係預定形成第2透過控制部之區域。 Furthermore, the area A in the figure corresponds to the area of the light-transmitting portion, the area B corresponds to the area of the first transmission control portion, and the area C corresponds to the area of the second transmission control portion. In other words, area A It is a region where the light-transmitting portion is scheduled to be formed, the B area is a region where the first transmission control portion is scheduled to be formed, and the C area is a region where the second transmission control portion is scheduled to be formed.

(光罩基底準備步驟) (Preparation steps for mask substrate)

首先，準備圖1(a)所示之光罩基底1。該光罩基底1係於透明基板2上形成第1光學膜3，進而於該第1光學膜3上積層形成第1抗蝕膜4而成者。 First, prepare the photomask substrate 1 shown in FIG. 1(a). The photomask base 1 is formed by forming a first optical film 3 on a transparent substrate 2, and further forming a first resist film 4 on the first optical film 3.

透明基板2可使用石英玻璃等透明材料而構成。透明基板2之大小或厚度並無限制。若將光罩基底1用於顯示裝置之製造，則可使用具有一邊之長度為300~1800mm、厚度為5~16mm左右之四邊形之主面之透明基板2。 The transparent substrate 2 can be formed using a transparent material such as quartz glass. The size or thickness of the transparent substrate 2 is not limited. If the photomask base 1 is used for the manufacture of a display device, a transparent substrate 2 having a quadrilateral main surface with a length of 300 to 1800 mm and a thickness of about 5 to 16 mm can be used.

第1光學膜3可設為對於顯示裝置製造用光罩之曝光中所用之曝光之光(以下，亦簡稱為「曝光之光」)具有特定之透光率之半透光膜。又，第1光學膜3可設為對於曝光之光具有特定之透光率，並且於透過時將曝光之光之相位實質上反轉之相位偏移膜。進而，第1光學膜3又可設為對於曝光之光之相位偏移量較低之低相位半透光膜。本實施形態中，將第1光學膜3設為具有上述相位偏移作用之相位偏移膜。 The first optical film 3 may be a semi-transmissive film having a specific light transmittance for exposure light (hereinafter, also referred to simply as "exposure light") used in exposure of a mask for manufacturing a display device. In addition, the first optical film 3 can be a phase shift film that has a specific light transmittance for exposure light and substantially reverses the phase of the exposure light when passing through. Furthermore, the first optical film 3 may be a low-phase semi-transmissive film with a relatively low phase shift with respect to exposure light. In this embodiment, the first optical film 3 is a phase shift film having the above-mentioned phase shift effect.

作為相位偏移膜之第1光學膜3係設為對於曝光之光中所含之光之代表波長(例如i線、h線、g線中之任一者，此處設為i線)具有透光率T1(%)及相位偏移量Φ 1(度)者。於該情形時，第1光學膜3對於曝光之光之代表波長光之透光率T1(%)及相位偏移量Φ 1(度)較佳為2≦T1≦40、150≦Φ 1≦210，且透光率T1之更佳範圍為2≦T1≦10，更佳為3≦T1≦8、或30≦T1≦40。又，對於相位偏移量Φ 1而言，更佳為165≦Φ 1≦195。本說明書中記述之膜之透光率係將透明基板2之透光率設為100%時之值。 The first optical film 3 as a phase shift film is set to have a representative wavelength of the light contained in the exposure light (for example, any one of i-line, h-line, and g-line, here is set as i-line) Transmittance T1 (%) and phase shift Φ 1 (degree). In this case, the transmittance T1 (%) and the phase shift amount Φ 1 (degree) of the first optical film 3 to the representative wavelength light of the exposure light are preferably 2≦T1≦40, 150≦Φ 1≦ 210, and the better range of the light transmittance T1 is 2≦T1≦10, more preferably 3≦T1≦8, or 30≦T1≦40. In addition, the phase shift amount Φ 1 is more preferably 165≦Φ 1≦195. The light transmittance of the film described in this specification is the value when the light transmittance of the transparent substrate 2 is set to 100%.

又，作為相位偏移膜之第1光學膜3之對於i線、h線、g線之光之相位 偏移量之偏差較佳為40度以下。又，第1光學膜係i線~g線之波長區域中之透光率之偏差較佳為2~8%。 Also, the phase of the first optical film 3 as a phase shift film with respect to the light of the i-line, h-line, and g-line The deviation of the offset is preferably 40 degrees or less. In addition, the deviation of the light transmittance in the wavelength region of the i-line to the g-line of the first optical film system is preferably 2 to 8%.

第1光學膜3之材料例如可設為含有Cr、Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜，且可自該等之化合物(例如氧化物、氮化物、碳化物、氮氧化物、碳氮化物、碳氮氧化物等)選擇合適者。第1光學膜3之材料尤其可較佳地使用Cr之化合物。具體而言，於含有Cr之膜之情形時，較佳為含有Cr之氧化物、氮化物、氮氧化物、碳氮氧化物中之1種或複數種者。本第1實施形態係設為第1光學膜3由包含Cr之膜材料、例如包含Cr化合物之膜材料形成。又，第1光學膜3可設為不含Si之膜。若將第1光學膜3設為不含Si之膜，則於第1光學膜3與第1抗蝕膜4之密接性變高之方面較為有利。 The material of the first optical film 3 can be, for example, a film containing any one of Cr, Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, and can be selected from these compounds (such as oxides). , Nitride, carbide, oxynitride, carbonitride, oxycarbonitride, etc.) select the appropriate one. As the material of the first optical film 3, a Cr compound can be preferably used. Specifically, in the case of a film containing Cr, it is preferably one or more of oxides, nitrides, oxynitrides, and oxycarbonitrides containing Cr. In the first embodiment, the first optical film 3 is formed of a film material containing Cr, for example, a film material containing a Cr compound. In addition, the first optical film 3 may be a film that does not contain Si. If the first optical film 3 is a film that does not contain Si, it is advantageous in that the adhesion between the first optical film 3 and the first resist film 4 becomes higher.

作為第1光學膜3之其他膜材料，可使用Si之化合物(SiON等)、或過渡金屬矽化物(例如Mo、Ti、W、Ta等之矽化物)或其化合物。作為過渡金屬矽化物之化合物，可列舉氧化物、氮化物、氮氧化物、碳氮氧化物等，且可較佳地例示MoSi之氧化物、氮化物、氮氧化物、碳氮氧化物等。 As other film materials of the first optical film 3, Si compounds (SiON, etc.), transition metal silicides (for example, Mo, Ti, W, Ta, etc. silicides) or their compounds can be used. As the transition metal silicide compound, oxides, nitrides, oxynitrides, oxycarbonitrides, etc. can be exemplified, and oxides, nitrides, oxynitrides, oxycarbonitrides, etc. of MoSi are preferably exemplified.

第1光學膜3之成膜方法中可使用例如濺鍍法等公知之方法。 For the method of forming the first optical film 3, a known method such as a sputtering method can be used.

進而，第1光學膜3係相對於光罩曝光中所用之曝光之光之代表波長光，表面反射率SR1(%)之值較佳為2≦SR1≦20。又，第1光學膜之背面反射率BR1(%)之值較佳為2≦BR1≦20。 Furthermore, the first optical film 3 is light with a representative wavelength relative to the exposure light used in the mask exposure, and the value of the surface reflectance SR1 (%) is preferably 2≦SR1≦20. In addition, the value of the back surface reflectance BR1 (%) of the first optical film is preferably 2≦BR1≦20.

第1光學膜3之表面及背面之光學性反射率可藉由第1光學膜3之組成及膜厚而調整。例如，於藉由上述材料成膜第1光學膜3時，可藉由採用於第1光學膜3之厚度方向上組成連續或不連續地變化之積層結構，而將表面 反射率SR1、背面反射率BR1設為上述所望範圍。作為方法，例如於濺鍍裝置中，可藉由使添加之氣體之種類或流量變化而形成厚度方向上存在組成變化之膜。 The optical reflectance of the surface and the back surface of the first optical film 3 can be adjusted by the composition and film thickness of the first optical film 3. For example, when the first optical film 3 is formed by using the above-mentioned materials, the surface can be changed by forming a continuous or discontinuously varying layered structure in the thickness direction of the first optical film 3. The reflectance SR1 and the back surface reflectance BR1 are set to the aforementioned desired range. As a method, for example, in a sputtering device, a film having a composition change in the thickness direction can be formed by changing the type or flow rate of the gas to be added.

藉此，可產生組成變化造成之折射率之變化、光吸收之控制、及薄膜干涉，從而控制表面反射率SR1或背面反射率BR1。 In this way, the change in refractive index caused by the change in composition, the control of light absorption, and the interference of the film can be generated, thereby controlling the surface reflectance SR1 or the back reflectance BR1.

又，第1光學膜3之表面反射率SR1與背面反射率BR1更佳為滿足2≦SR1/BR1≦10之關係。 Furthermore, it is more preferable that the surface reflectance SR1 and the back surface reflectance BR1 of the first optical film 3 satisfy the relationship of 2≦SR1/BR1≦10.

此處，所謂第1光學膜3之表面係指露出第1光學膜3之側之面。由此，上述表面反射率SR1係第1光學膜3未與第2光學膜5積層而作為單膜所形成之部分之反射率。 Here, the surface of the first optical film 3 refers to the surface on the side where the first optical film 3 is exposed. Accordingly, the surface reflectance SR1 is the reflectance of the portion where the first optical film 3 is not laminated with the second optical film 5 and is formed as a single film.

又，所謂第1光學膜3之背面係指存在透明基板2之側之面。所謂上述背面反射率BR1係對於第1光學膜3未與第2光學膜5積層而作為單膜所形成之部分而言，光自透明基板2之背面側入射之情形時之反射率。再者，透明基板2之表面引起之反射光於此處不予考慮。 In addition, the back surface of the first optical film 3 refers to the surface on the side where the transparent substrate 2 exists. The above-mentioned back surface reflectance BR1 is the reflectance when light is incident on the back surface side of the transparent substrate 2 for a portion where the first optical film 3 is not laminated with the second optical film 5 and is formed as a single film. Furthermore, the reflected light caused by the surface of the transparent substrate 2 is not considered here.

如上所述，於第1光學膜3之表面反射率SR1、背面反射率BR1受到抑制之情形時，難以產生繪圖時之駐波，又，可抑制曝光時曝光裝置內所產生之雜散光、眩光。因而，可較高地維持圖案之CD精度。 As described above, when the surface reflectance SR1 and the back surface reflectance BR1 of the first optical film 3 are suppressed, it is difficult to generate standing waves during drawing, and the stray light and glare generated in the exposure device during exposure can be suppressed. . Therefore, the CD accuracy of the pattern can be maintained high.

第1抗蝕膜4可利用電子束(electron beam，EB)抗蝕劑、光阻劑等形成。此處，作為一例，設為使用光阻劑。第1抗蝕膜4可藉由於第1光學膜3上塗佈光阻劑而形成。光阻劑可為正型、負型中之任一者，此處設為使用正型光阻劑。第1抗蝕膜4之膜厚可設為5000~10000Å左右。 The first resist film 4 can be formed using electron beam (EB) resist, photoresist, or the like. Here, as an example, it is assumed that a photoresist is used. The first resist film 4 can be formed by coating a photoresist on the first optical film 3. The photoresist may be either positive type or negative type, and it is assumed that a positive type photoresist is used here. The film thickness of the first resist film 4 can be set to about 5000-10000 Å.

(第1抗蝕圖案形成步驟) (The first resist pattern formation step)

繼而，如圖1(b)所示，藉由將第1抗蝕膜4圖案化，而形成第1抗蝕圖 案4a。於該步驟中，使用繪圖裝置對上述光罩基底1繪製所需之圖案(第1繪圖)。用以繪圖之能量線可使用電子束或雷射光束等，但此處設為使用雷射光束(波長410~420nm)。對光罩基底1進行繪圖後，將第1抗蝕膜4顯影，藉此形成第1抗蝕圖案4a。第1抗蝕圖案4a係設為覆蓋第1透過控制部之形成區域(B區域)，且於其他區域(A區域、C區域)具有開口之形狀。 Then, as shown in FIG. 1(b), a first resist pattern is formed by patterning the first resist film 4 Case 4a. In this step, a drawing device is used to draw a desired pattern (first drawing) on the above-mentioned photomask substrate 1. The energy line used for drawing can use electron beam or laser beam, etc., but here is set to use laser beam (wavelength 410~420nm). After the photomask base 1 is drawn, the first resist film 4 is developed, thereby forming the first resist pattern 4a. The first resist pattern 4a is configured to cover the formation region (region B) of the first transmission control portion, and has an opening shape in the other regions (region A, region C).

(第1圖案化步驟) (The first patterning step)

繼而，如圖1(c)所示，藉由以第1抗蝕圖案4a為遮罩，蝕刻第1光學膜3，而形成第1光學膜圖案3a。此時，藉由蝕刻而將於第1抗蝕圖案4a之開口部露出之第1光學膜3去除。第1光學膜3之蝕刻既可為乾式蝕刻，亦可為濕式蝕刻。上述光罩基底1中係由包含Cr化合物之膜形成第1光學膜3，故可較佳地適用使用Cr用之蝕刻液之濕式蝕刻。藉此，將透明基板2上之第1光學膜3圖案化，形成第1光學膜圖案3a。 Then, as shown in FIG. 1(c), the first optical film 3 is etched by using the first resist pattern 4a as a mask to form the first optical film pattern 3a. At this time, the first optical film 3 exposed at the opening of the first resist pattern 4a is removed by etching. The etching of the first optical film 3 may be dry etching or wet etching. In the above-mentioned photomask substrate 1, the first optical film 3 is formed of a film containing a Cr compound, so wet etching using an etching solution for Cr can be preferably applied. Thereby, the first optical film 3 on the transparent substrate 2 is patterned to form the first optical film pattern 3a.

第1圖案化步驟中成為蝕刻對象者僅為第1光學膜3。又，於較第1圖案化步驟靠後之步驟中，不存在蝕刻第1光學膜3之步驟。因此，第1光學膜圖案3a之形狀係於該階段劃定。因此，藉由本實施形態之製造方法所獲得之顯示裝置製造用光罩之第1透過控制部之區域係於第1圖案化步驟中劃定。 Only the first optical film 3 becomes the etching target in the first patterning step. In addition, in a step later than the first patterning step, there is no step of etching the first optical film 3. Therefore, the shape of the first optical film pattern 3a is defined at this stage. Therefore, the region of the first transmission control portion of the mask for manufacturing a display device obtained by the manufacturing method of this embodiment is defined in the first patterning step.

再者，濕式蝕刻存在使膜剖面產生輕微之側蝕之情形，於圖式中將該方面省略。於必須考慮該輕微之側蝕對CD精度造成之影響之情形時，於使用上述繪圖裝置進行繪圖時預先對繪圖資料實施資料加工即可。具體而言，以抵消因側蝕導致之圖案尺寸之減少量之方式，減少第1抗蝕圖案4a之開口尺寸即可。 Furthermore, wet etching may cause slight undercutting of the film cross-section, so this aspect is omitted in the drawing. When it is necessary to consider the influence of the slight undercut on the accuracy of the CD, it is sufficient to perform data processing on the drawing data in advance when using the above drawing device for drawing. Specifically, it is sufficient to reduce the opening size of the first resist pattern 4a in order to offset the reduction in the pattern size caused by side etching.

(第1抗蝕劑剝離步驟) (The first resist stripping step)

繼而，如圖1(d)所示，剝離第1抗蝕圖案4a。藉此，可獲得附帶第1光學膜圖案3a之透明基板2。 Then, as shown in FIG. 1(d), the first resist pattern 4a is peeled off. Thereby, the transparent substrate 2 with the first optical film pattern 3a can be obtained.

(第2光學膜形成步驟) (Second Optical Film Formation Step)

繼而，如圖1(e)所示，於包括第1光學膜圖案3a之透明基板2上形成第2光學膜5。第2光學膜5係藉由特定之成膜方法而形成於透明基板2之轉印用圖案形成區域整體。作為第2光學膜5之成膜方法，可與上述第1光學膜3同樣地適用濺鍍法等公知之方法。 Then, as shown in FIG. 1(e), a second optical film 5 is formed on the transparent substrate 2 including the first optical film pattern 3a. The second optical film 5 is formed on the entire transfer pattern formation area of the transparent substrate 2 by a specific film forming method. As a film forming method of the second optical film 5, a known method such as a sputtering method can be applied in the same manner as the first optical film 3 described above.

第2光學膜5可設為對於曝光之光具有特定之透光率之半透光膜。又，第2光學膜5可設為對於曝光之光具有特定之透光率，並且於透過時使曝光之光之相位實質上反轉之相位偏移膜。進而，第2光學膜5又可設為對於曝光之光之相位偏移量較低之低相位半透光膜。再者，本說明書中，亦將低相位半透光膜簡稱為半透光膜。第2光學膜5因其設為相位偏移膜或設為低相位半透光膜，而較佳之光學特性如下所述地不同。 The second optical film 5 can be a semi-transmissive film having a specific light transmittance for exposure light. In addition, the second optical film 5 may be a phase shift film that has a specific light transmittance for exposure light and substantially reverses the phase of the exposure light when passing through. Furthermore, the second optical film 5 may be a low-phase semi-transmissive film with a relatively low phase shift with respect to exposure light. Furthermore, in this specification, the low-phase translucent film is also referred to as the translucent film for short. Since the second optical film 5 is a phase shift film or a low-phase semi-transmissive film, preferable optical characteristics are different as described below.

即，作為相位偏移膜之第2光學膜5係設為對於曝光之光中所含之光之代表波長(例如i線、h線、g線中之任一者，此處為i線)具有透光率T2(%)及相位偏移量Φ 2(度)者。於該情形時，第2光學膜5對於曝光之光之代表波長光之透光率T2(%)及相位偏移量Φ 2(度)較佳為2≦T2≦10、150≦Φ 2≦210，更佳為3≦T2≦8、165≦Φ 2≦195。 That is, the second optical film 5 as a phase shift film is set to the representative wavelength of the light contained in the exposure light (for example, any one of i-line, h-line, and g-line, here is i-line) Those with light transmittance T2 (%) and phase shift Φ 2 (degrees). In this case, the transmittance T2 (%) and phase shift amount Φ 2 (degrees) of the second optical film 5 to the representative wavelength light of the exposure light are preferably 2≦T2≦10, 150≦Φ 2≦ 210, more preferably 3≦T2≦8, 165≦Φ 2≦195.

又，作為相位偏移膜之第2光學膜5較佳為與上述第1光學膜3同樣地，對於i線、h線、g線之光之相位偏移量之偏差為40度以下。 Moreover, it is preferable that the 2nd optical film 5 which is a phase shift film, like the said 1st optical film 3, the deviation of the phase shift amount with respect to i-line, h-line, and g-line light is 40 degrees or less.

與此相對，作為低相位半透光膜之第2光學膜5係於將第2光學膜5對於曝光之光之代表波長光之透光率設為T2(%)，相位偏移量設為Φ 2(度)時，較佳為10≦T2≦60、0<Φ 2≦90，更佳為20≦T2≦50、5≦Φ 2≦60。 In contrast to this, the second optical film 5 as a low-phase semi-transmissive film is based on setting the transmittance of the second optical film 5 to the representative wavelength light of the exposed light as T2 (%), and the phase shift amount as When Φ 2 (degrees), it is preferably 10≦T2≦60, 0<Φ 2≦90, and more preferably 20≦T2≦50, 5≦Φ 2≦60.

又，作為低相位半透光膜之第2光學膜5係i線~g線之波長區域中之透光率之偏差較佳為0~8%。此處記述之第2光學膜5之透光率之偏差係將對於i線之透過率設為Ti(%)且將對於g線之透過率設為Tg(%)時之Ti與Tg之差之絕對值。 In addition, the light transmittance deviation of the second optical film 5, which is a low-phase semi-transmissive film, in the wavelength region of the i-line to the g-line is preferably 0 to 8%. The deviation of the light transmittance of the second optical film 5 described here is the difference between Ti and Tg when the transmittance to the i-line is set to Ti(%) and the transmittance to the g-line is set to Tg(%) The absolute value.

因此，較佳為，以滿足該等條件之方式，調整第2光學膜5之膜質及膜厚。第2光學膜5之膜厚係因所需之透光率而變化，且大約可設為50~500Å之範圍。本第1實施形態係將第2光學膜5設為低相位半透光膜。 Therefore, it is preferable to adjust the film quality and film thickness of the second optical film 5 to satisfy these conditions. The film thickness of the second optical film 5 varies according to the required light transmittance, and can be approximately set in the range of 50-500 Å. In the first embodiment, the second optical film 5 is a low-phase semi-transmissive film.

第2光學膜5之材料例如可設為含有Cr、Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜，且可自該等之化合物(例如氧化物、氮化物、碳化物、氮氧化物、碳氮化物、碳氮氧化物等)選擇合適者。 The material of the second optical film 5 can be, for example, a film containing any one of Cr, Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, and can be selected from these compounds (such as oxides). , Nitride, carbide, oxynitride, carbonitride, oxycarbonitride, etc.) select the appropriate one.

作為第2光學膜5之其他膜材料，可使用Si之化合物(SiON等)、或過渡金屬矽化物(例如Mo、Ti、W、Ta等之矽化物)或其化合物。作為過渡金屬矽化物之化合物，可列舉氧化物、氮化物、氮氧化物、碳氮氧化物等，且較佳為例示MoSi之氧化物、氮化物、氮氧化物、碳氮氧化物等。 As other film materials of the second optical film 5, Si compounds (SiON, etc.), transition metal silicides (for example, Mo, Ti, W, Ta, etc. silicides) or their compounds can be used. Examples of the transition metal silicide compound include oxides, nitrides, oxynitrides, oxycarbonitrides, etc., and preferably exemplified MoSi oxides, nitrides, oxynitrides, oxycarbonitrides, and the like.

較佳為，第1光學膜3及第2光學膜5設為對於彼此之蝕刻劑具有耐受性之材料。即，較理想為，第1光學膜3及第2光學膜5設為相互具有蝕刻選擇性之材料。例如於第1光學膜3為包含Cr之膜之情形時，第2光學膜5膜設為包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜。 Preferably, the first optical film 3 and the second optical film 5 are made of materials that are resistant to each other's etchant. That is, it is preferable that the first optical film 3 and the second optical film 5 are made of materials having etching selectivity to each other. For example, when the first optical film 3 is a film containing Cr, the second optical film 5 is a film containing any one of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf.

例如第1光學膜3與第2光學膜5較佳為一者為含Cr材料、另一者為含Si材料之組合。具體而言，於第1光學膜3中使用含Cr材料之情形時，較佳為第2光學膜5中使用含Si材料，且於第1光學膜3中使用含Si材料之情形時，較佳為第2光學膜5中使用含Cr材料。本第1實施形態中，因第1光學膜3中使用Cr化合物，故設為第2光學膜5中使用MoSi化合物。 For example, the first optical film 3 and the second optical film 5 are preferably a combination of one of Cr-containing materials and the other of Si-containing materials. Specifically, when a Cr-containing material is used in the first optical film 3, it is preferable to use a Si-containing material in the second optical film 5, and when a Si-containing material is used in the first optical film 3, it is more It is preferable to use a Cr-containing material for the second optical film 5. In this first embodiment, since a Cr compound is used in the first optical film 3, it is assumed that a MoSi compound is used in the second optical film 5.

對於第2光學膜5而言，亦與第1光學膜3同樣地，相對於光罩曝光中所用之曝光之光之代表波長光，表面反射率SR2(%)之值較佳為2≦SR2≦20。又，第2光學膜之背面反射率BR2(%)之值較佳為2≦BR2≦20。 For the second optical film 5, similar to the first optical film 3, the surface reflectance SR2 (%) is preferably 2≦SR2 with respect to the representative wavelength light of the exposure light used in the mask exposure. ≦20. Moreover, the value of the back surface reflectance BR2 (%) of the second optical film is preferably 2≦BR2≦20.

第2光學膜5之調整表面反射率SR2及背面反射率BR2之方法係與第1光學膜3之情形相同。 The method of adjusting the surface reflectance SR2 and the back surface reflectance BR2 of the second optical film 5 is the same as in the case of the first optical film 3.

又，第2光學膜5之表面反射率SR2與背面反射率BR2之關係更佳為2≦SR2/BR2≦10。 In addition, the relationship between the surface reflectance SR2 and the back surface reflectance BR2 of the second optical film 5 is more preferably 2≦SR2/BR2≦10.

此處，所謂第2光學膜5之表面係指露出第2光學膜5之側之面。上述表面反射率SR2係第2光學膜5未與第1光學膜3積層而作為單膜所形成之部分之反射率。 Here, the surface of the second optical film 5 refers to the surface on the side where the second optical film 5 is exposed. The above-mentioned surface reflectance SR2 is the reflectance of the portion where the second optical film 5 is not laminated with the first optical film 3 and is formed as a single film.

又，所謂第2光學膜5之背面係指存在透明基板2之側之面。所謂上述背面反射率BR2係對於第2光學膜5未與第1光學膜3積層而作為單膜所形成之部分而言，光自透明基板之背面側入射之情形時之反射率。再者，透明基板之表面引起之反射光於此處不予考慮。 In addition, the back surface of the second optical film 5 refers to the surface on the side where the transparent substrate 2 exists. The above-mentioned back surface reflectance BR2 is the reflectance when light is incident on the back surface side of the transparent substrate for the portion where the second optical film 5 is not laminated with the first optical film 3 and is formed as a single film. Furthermore, the reflected light caused by the surface of the transparent substrate is not considered here.

對於第2光學膜5而言，亦與第1光學膜3同樣地，於表面反射率SR2、背面反射率BR2受到抑制之情形時，難以產生繪圖時之駐波，又，可抑制曝光時曝光裝置內所產生之雜散光、眩光。因而，可較高地維持圖案之CD精度。 For the second optical film 5, as with the first optical film 3, when the surface reflectance SR2 and the back surface reflectance BR2 are suppressed, it is difficult to generate standing waves during drawing, and the exposure during exposure can be suppressed. Stray light and glare generated in the device. Therefore, the CD accuracy of the pattern can be maintained high.

(第2抗蝕膜形成步驟) (Second resist film formation step)

繼而，如圖2(f)所示，於第2光學膜5上積層地形成第2抗蝕膜6。第2抗蝕膜6可與上述第1抗蝕膜4同樣地，藉由塗佈光阻劑而形成。 Then, as shown in FIG. 2(f), a second resist film 6 is formed in layers on the second optical film 5. The second resist film 6 can be formed by applying a photoresist in the same manner as the first resist film 4 described above.

(第2抗蝕圖案形成步驟) (Second resist pattern formation step)

繼而，如圖2(g)所示，藉由將第2抗蝕膜6圖案化，而形成第2抗蝕圖案6a。於該步驟中，與上述第1繪圖同樣地，使用繪圖裝置對光罩基底1繪製所需之圖案(第2繪圖)後，將第2抗蝕膜6顯影，藉此形成第2抗蝕圖案6a。 Then, as shown in FIG. 2(g), the second resist film 6 is patterned to form a second resist pattern 6a. In this step, similar to the first drawing described above, a drawing device is used to draw a desired pattern (second drawing) on the mask substrate 1, and then the second resist film 6 is developed, thereby forming a second resist pattern 6a.

第2抗蝕圖案6a係用以形成顯示裝置製造用光罩之透光部之抗蝕圖案，且於對應於透光部之區域(A區域)具有開口。又，第2抗蝕圖案6a係具有覆蓋第2透過控制部之形成區域(C區域)，並且於第2透過控制部之邊緣處相鄰之2個第1透過控制部(B區域)側增加了特定寬度之邊際之尺寸。若將該特定寬度之邊際部分設為邊際區域，且將該邊際區域之寬度設為M1(μm)，則較佳為0.2≦M1≦1.0，更佳為0.2≦M1≦0.8。 The second resist pattern 6a is a resist pattern for forming the light-transmitting part of the photomask for manufacturing the display device, and has an opening in the region (A region) corresponding to the light-transmitting part. In addition, the second resist pattern 6a has a formation area (C area) covering the second transmission control portion, and increases on the side of two adjacent first transmission control portions (B area) at the edge of the second transmission control portion The size of the margin of a specific width. If the marginal portion of the specific width is set as a marginal area, and the width of the marginal area is set to M1 (μm), it is preferably 0.2≦M1≦1.0, and more preferably 0.2≦M1≦0.8.

邊際區域之寬度M1之尺寸可考慮於第1抗蝕圖案3a與第2抗蝕圖案6a之間可能產生之對準偏移量而決定。即，於使用平板顯示器(Flat Panel Display，FPD)用等之繪圖裝置，以相同之透明基板為對象，實施2次以上之繪圖之情形時，各次之透明基板之位置對準使用對準標記準確地進行，但難以於各次中使透明基板之位置完全一致，從而不可避免地某種程度上產生相對之對準偏移。相對於此，藉由考慮製造步驟中可能產生之對準偏移量，預先設定邊際之寬度M1，而維持圖案精度。再者，關於上述邊際，於下述段落中進一步進行敍述。 The size of the width M1 of the marginal area can be determined in consideration of the amount of misalignment that may occur between the first resist pattern 3a and the second resist pattern 6a. That is, when using a drawing device such as a flat panel display (Flat Panel Display, FPD) to use the same transparent substrate as the object, when drawing is performed more than two times, the alignment mark is used for the position alignment of the transparent substrate for each time. Accurately, but it is difficult to make the position of the transparent substrate exactly the same in each time, so it is inevitable that the relative alignment shift will occur to some extent. In contrast, by considering the amount of misalignment that may occur in the manufacturing process, the margin width M1 is preset to maintain the pattern accuracy. Furthermore, the above margin is further described in the following paragraphs.

(第2圖案化步驟) (2nd patterning step)

繼而，如圖2(h)所示，藉由以第2抗蝕圖案6a為遮罩，蝕刻第2抗蝕圖案6a之開口部中露出之第2光學膜5，而形成第2光學膜圖案5a。此時，成為蝕刻對象者僅為第2光學膜5。藉此，於對應於透光部之區域(A區域)，藉由蝕刻而將透明基板2上之第2光學膜5去除，藉此形成使透明基板 2之表面露出而成之透光部。又，於對應於第1透過控制部之區域(B區域)，於邊際區域以外之區域(主區域)藉由蝕刻而去除第2光學膜5。於該步驟中，亦可較佳地適用使用蝕刻液之濕式蝕刻。於該情形時，對於曝光之光之代表波長光，第1透過控制部之邊際區域與第2透過控制部(C區域)之相位差δ(度)較佳為150≦δ≦210。 Then, as shown in FIG. 2(h), by using the second resist pattern 6a as a mask, the second optical film 5 exposed in the opening of the second resist pattern 6a is etched to form a second optical film pattern 5a. At this time, only the second optical film 5 is the subject of etching. In this way, the second optical film 5 on the transparent substrate 2 is removed by etching in the area corresponding to the light-transmitting portion (A area), thereby forming a transparent substrate The light-transmitting part where the surface of 2 is exposed. In addition, in the region (region B) corresponding to the first transmission control portion, the second optical film 5 is removed by etching in the region (main region) other than the marginal region. In this step, wet etching using an etching solution can also be preferably applied. In this case, the phase difference δ (degrees) between the marginal area of the first transmission control portion and the second transmission control portion (C area) is preferably 150≦δ≦210 for the representative wavelength light of the exposure light.

(第2抗蝕劑剝離步驟) (Second resist stripping step)

繼而，如圖2(i)所示，剝離第2抗蝕圖案6a。 Then, as shown in FIG. 2(i), the second resist pattern 6a is peeled off.

藉由以上步驟，完成顯示裝置製造用光罩9。 Through the above steps, the photomask 9 for manufacturing the display device is completed.

於上述顯示裝置製造用光罩之製造步驟中包括2次蝕刻步驟，但於任一蝕刻步驟中，成為蝕刻對象者均僅為一個膜。即，於本實施形態中，不會於積層有第1光學膜3與第2光學膜5之狀態下，藉由同一蝕刻劑連續蝕刻該2個膜。 The manufacturing steps of the photomask for manufacturing the display device include two etching steps, but in any one of the etching steps, only one film becomes the etching target. That is, in this embodiment, the first optical film 3 and the second optical film 5 are not continuously etched by the same etchant in the state where the first optical film 3 and the second optical film 5 are laminated.

若將形成積層結構之2個膜藉由同一蝕刻劑連續濕式蝕刻，則蝕刻時間變得相對較長，側蝕之量亦容易增加。側蝕對所形成之圖案之CD(Critical dimension)造成影響。關於側蝕，可藉由採取預先對繪圖資料實施量測等對策，而減輕CD之窄細化。但，即便於該情形時，亦難以消除伴隨側蝕之量增加而產生之面內之CD偏差。於該方面，本實施形態之顯示裝置製造用光罩之製造方法中不包括連續蝕刻第1光學膜3與第2光學膜5之積層部分之步驟，故具有可將最終形成之轉印用圖案之CD精度維持較高之優點。 If the two films forming the laminated structure are continuously wet-etched by the same etchant, the etching time becomes relatively long and the amount of side etching is also likely to increase. Undercutting affects the CD (Critical dimension) of the formed pattern. Regarding undercutting, measures such as pre-measurement of the drawing data can be taken to reduce the narrowing of the CD. However, even in this case, it is difficult to eliminate the in-plane CD deviation caused by the increase in the amount of side erosion. In this regard, the manufacturing method of the photomask for manufacturing the display device of this embodiment does not include the step of continuously etching the laminated portion of the first optical film 3 and the second optical film 5, so it has a pattern for transfer that can be finally formed The advantage of maintaining high CD accuracy.

<實施形態之顯示裝置製造用光罩之構成> <The structure of the mask for manufacturing the display device of the embodiment>

繼而，利用圖3對本發明之實施形態之顯示裝置製造用光罩之構成進行說明。 Next, the structure of the mask for manufacturing a display device according to the embodiment of the present invention will be described with reference to FIG. 3.

圖示之顯示裝置製造用光罩9包括具有於透明基板2上將第1光學膜3與第2光學膜5分別圖案化而形成之透光部10、第1透過控制部11及第2透過控制部12之轉印用圖案。該轉印用圖案包括透光部10、具有與透光部10相鄰之部分之第1透過控制部11、及具有與第1透過控制部11相鄰之部分之第2透過控制部12。透光部10成為露出有透明基板2之表面之部分。於第1透過控制部11，於透明基板2上形成有第1光學膜3。於第2透過控制部12，於透明基板2上形成有第2光學膜5。又，第1透過控制部11係於沿與第2透過控制部12相鄰之邊緣之特定寬度之部分，具有第1光學膜3與第2光學膜5進行積層之特定寬度之邊際區域13，並且於邊際區域13以外之部分，具有僅形成有第1光學膜3之主區域14。 The photomask 9 for manufacturing the display device shown in the figure includes a light transmitting portion 10 formed by patterning a first optical film 3 and a second optical film 5 on a transparent substrate 2, a first transmission control portion 11, and a second transmission. The transfer pattern of the control section 12. The transfer pattern includes a light-transmitting portion 10, a first transmission control portion 11 having a portion adjacent to the light-transmitting portion 10, and a second transmission control portion 12 having a portion adjacent to the first transmission control portion 11. The light-transmitting part 10 becomes a part where the surface of the transparent substrate 2 is exposed. In the first transmission control portion 11, a first optical film 3 is formed on the transparent substrate 2. In the second transmission control portion 12, a second optical film 5 is formed on the transparent substrate 2. In addition, the first transmission control portion 11 is located along the edge of the second transmission control portion 12 with a specific width, and has a marginal area 13 of a specific width where the first optical film 3 and the second optical film 5 are laminated. In addition, the marginal region 13 has a main region 14 in which only the first optical film 3 is formed.

此處，於本實施形態之顯示裝置製造用光罩9中，若將第1透過控制部11之邊際區域13之寬度設為M1(μm)，則較佳為0.2≦M1≦1.0，更佳為0.2≦M1≦0.8。於第1透過控制部11，於邊際區域13，在第1光學膜3上積層形成有第2光學膜5，且於作為邊際區域13以外之區域之主區域14，在透明基板2上僅形成有第1光學膜3。 Here, in the mask 9 for manufacturing the display device of the present embodiment, if the width of the marginal region 13 of the first transmission control portion 11 is set to M1 (μm), it is preferably 0.2≦M1≦1.0, more preferably It is 0.2≦M1≦0.8. In the first transmission control portion 11, the second optical film 5 is laminated and formed on the first optical film 3 in the marginal area 13, and the main area 14, which is an area other than the marginal area 13, is formed only on the transparent substrate 2. There is a first optical film 3.

於第2透過控制部12，在透明基板2上僅形成有第2光學膜5。 In the second transmission control portion 12, only the second optical film 5 is formed on the transparent substrate 2.

顯示裝置製造用光罩9之轉印用圖案包括自對向之兩方向由第1透過控制部11夾持之第2透過控制部12。而且，上述邊際區域13係形成於第1透過控制部11與第2透過控制部12各自之相鄰部分之第1透過控制部11側。 The transfer pattern of the photomask 9 for manufacturing a display device includes a second transmission control portion 12 sandwiched by a first transmission control portion 11 from two opposite directions. In addition, the marginal area 13 is formed on the side of the first transmission control portion 11 of the adjacent portions of the first transmission control portion 11 and the second transmission control portion 12.

於本實施形態中，如上所述，第1光學膜3成為相位偏移膜，且第2光學膜5成為低相位半透光膜。於該情形時，第1透過控制部11對於曝光之光之代表波長光之透光率T1(%)較佳為2≦T1≦40，更佳為2≦T1≦10，進 而較佳為3≦T1≦8、或30≦T1≦40。 In this embodiment, as described above, the first optical film 3 becomes a phase shift film, and the second optical film 5 becomes a low-phase semi-transmissive film. In this case, the light transmittance T1 (%) of the first transmission control section 11 to the representative wavelength light of the exposure light is preferably 2≦T1≦40, more preferably 2≦T1≦10, and Preferably, it is 3≦T1≦8, or 30≦T1≦40.

透過第1透過控制部11之曝光之光較佳為實質上不將形成於被轉印體上之抗蝕膜感光。即，第1透過控制部11較佳為於光罩中發揮類似遮光部之功能。 It is preferable that the exposure light transmitted through the first transmission control portion 11 does not substantially sensitize the resist film formed on the body to be transferred. That is, it is preferable that the first transmission control portion 11 functions as a light shielding portion in the mask.

進而，於該情形時，第1光學膜3對於曝光之光之代表波長光之相位偏移量Φ 1(度)較佳為150≦Φ 1≦210。藉此，第1透過控制部11與透光部10之相鄰部分(圖3之P之部分)成為透過兩者之曝光之光之相位大致反轉之關係，且該相反相位之光相互干擾，藉此，透過光之強度降低。其結果，可獲得可使圖案之對比度提昇之所謂之相位偏移效應。因此，可設為減少形成於被轉印體上之抗蝕圖案之側面形狀之傾斜(傾倒)而具有與被轉印體之表面接近垂直之側面形狀之抗蝕圖案。 Furthermore, in this case, the phase shift amount Φ 1 (degree) of the first optical film 3 with respect to the representative wavelength light of the exposure light is preferably 150≦Φ 1≦210. Thereby, the adjacent portion of the first transmission control portion 11 and the light transmission portion 10 (the portion P in FIG. 3) has a relationship of approximately inverting the phases of the exposure light passing through the two, and the light of the opposite phases interfere with each other , Thereby, the intensity of the transmitted light is reduced. As a result, a so-called phase shift effect that can improve the contrast of the pattern can be obtained. Therefore, it is possible to provide a resist pattern that reduces the inclination (tilting) of the side shape of the resist pattern formed on the body to be transferred and has a side shape that is nearly perpendicular to the surface of the body to be transferred.

進而，如上所述，第1光學膜3係相對於光罩曝光中所用之曝光之光之代表波長光，表面反射率SR1之值較佳為2≦SR1≦20。又，第1光學膜3之背面反射率BR1之值較佳為2≦BR1≦20。 Furthermore, as described above, the first optical film 3 is light with a representative wavelength relative to the exposure light used in the mask exposure, and the value of the surface reflectance SR1 is preferably 2≦SR1≦20. Moreover, the value of the back surface reflectance BR1 of the first optical film 3 is preferably 2≦BR1≦20.

又，第1光學膜3之表面反射率SR1與背面反射率BR1更佳為滿足2≦SR1/BR1≦10之關係。 Furthermore, it is more preferable that the surface reflectance SR1 and the back surface reflectance BR1 of the first optical film 3 satisfy the relationship of 2≦SR1/BR1≦10.

又，於第2光學膜5為低相位半透光膜之情形時，第2光學膜5對於曝光之光之代表波長光之透光率T2(%)及相位偏移量Φ 2(度)較佳為10≦T2≦60、0<Φ 2≦90。 Moreover, when the second optical film 5 is a low-phase semi-transmissive film, the second optical film 5 has a transmittance T2 (%) and a phase shift amount Φ 2 (degrees) of the representative wavelength light of the exposed light Preferably, it is 10≦T2≦60, 0<Φ 2≦90.

另一方面，於第1透過控制部11與第2透過控制部12之相鄰部分(圖3之Q之部分)，透過兩者之曝光之光之相位亦成為大致反轉之關係。再者，於Q之部分，存在於第1光學膜3上積層第2光學膜5，且於該等膜彼此接觸 之界面之部分，因膜材料而於透過此處之光之相位中產生偏移之可能性。因此，於第1透過控制部11，難以準確地預測邊際區域13與主區域14之相互之相位差。然而，可將邊際區域13與主區域14之對於曝光之光之相位差大致設為180度，較佳為將該相位差δ設為150≦δ≦210，此處亦產生光之干擾，從而獲得對比度提昇之效果。 On the other hand, in the adjacent portion of the first transmission control portion 11 and the second transmission control portion 12 (the portion of Q in FIG. 3), the phases of the exposure light passing through the two are also approximately reversed. Furthermore, in the part of Q, the second optical film 5 is laminated on the first optical film 3, and these films are in contact with each other The part of the interface of the film material may shift the phase of the light passing therethrough. Therefore, it is difficult to accurately predict the phase difference between the marginal area 13 and the main area 14 in the first transmission control unit 11. However, the phase difference between the marginal area 13 and the main area 14 with respect to the exposure light can be set to approximately 180 degrees. It is better to set the phase difference δ to 150≦δ≦210, where light interference is also generated, thereby Get the effect of contrast enhancement.

上述第1光學膜3所產生之相位偏移效應均有助於藉由利用本實施形態之顯示裝置製造用光罩9，將該轉印用圖案轉印至被轉印體而將所欲獲得之器件之精度或良率維持較高。 The phase shift effect produced by the above-mentioned first optical film 3 all contributes to the transfer of the transfer pattern to the object to be transferred by using the mask 9 for manufacturing the display device of this embodiment to obtain the desired result. The accuracy or yield rate of the device is maintained high.

因此，邊際區域13之寬度M1較佳為除了設為吸收對準偏移之尺寸以外，且考慮藉由第1光學膜3獲得之相位偏移效應進行設計。邊際區域13之寬度M1(μm)可較佳地設為0.5≦M1≦1.0。 Therefore, the width M1 of the marginal region 13 is preferably designed in addition to the size that absorbs the alignment shift, and the phase shift effect obtained by the first optical film 3 is considered. The width M1 (μm) of the marginal region 13 can preferably be set to 0.5≦M1≦1.0.

又，於藉由將第2光學膜5設為低相位半透光膜而將第2透過控制部12設為低相位半透光部之情形時，本實施形態之顯示裝置製造用光罩9可作為多階光罩發揮功能。即，對於形成於被轉印體上之抗蝕膜(此處假定為正型抗蝕劑)，本實施形態之顯示裝置製造用光罩9所包括之轉印用圖案之透過光於透光部10、第1透過控制部11、第2透過控制部12中成為分別不同之強度。因此，若利用顯示裝置製造用光罩9將被轉印體上之抗蝕膜曝光後進行顯影，則可形成包括無抗蝕殘膜之部分、具有特定量之抗蝕殘膜之部分、及抗蝕殘膜較該特定量薄之部分之抗蝕圖案。進而，可藉由第1光學膜3之相位偏移作用而設為側面形狀之傾斜較少之有利形狀之抗蝕圖案。 Furthermore, when the second optical film 5 is used as a low-phase semi-transmissive film and the second transmission control portion 12 is used as a low-phase semi-transmissive portion, the mask 9 for manufacturing a display device of the present embodiment Can function as a multi-stage mask. That is, for the resist film formed on the body to be transferred (here, it is assumed to be a positive resist), the transmitted light of the transfer pattern included in the photomask 9 for manufacturing the display device of this embodiment is less than the transmitted light. The intensities of the section 10, the first transmission control section 11, and the second transmission control section 12 are different from each other. Therefore, if the photomask 9 for manufacturing a display device is used to expose the resist film on the transferred body and then develop it, it is possible to form a portion including no resist residual film, a portion with a specific amount of resist residual film, and The resist pattern is a part of the resist residual film thinner than the specified amount. Furthermore, by the phase shift action of the first optical film 3, it is possible to provide a resist pattern of an advantageous shape with less inclination of the side shape.

對於第2光學膜5而言，亦與第1光學膜3同樣地，相對於光罩曝光中所用之曝光之光之代表波長光，表面反射率SR2之值較佳為 2≦SR2≦20。又，第2光學膜5之背面反射率BR2之值較佳為2≦BR2≦20。 For the second optical film 5, as with the first optical film 3, the surface reflectance SR2 is preferably the value of the representative wavelength light of the exposure light used in the mask exposure 2≦SR2≦20. Moreover, the value of the back surface reflectance BR2 of the second optical film 5 is preferably 2≦BR2≦20.

又，第2光學膜5之表面反射率SR2與背面反射率BR2更佳為滿足2≦SR2/BR2≦10之關係。 Furthermore, it is more preferable that the surface reflectance SR2 and the back surface reflectance BR2 of the second optical film 5 satisfy the relationship of 2≦SR2/BR2≦10.

於顯示裝置製造用光罩9之轉印用圖案中，圖案線寬(CD)為1.5μm以上之情形較多。因而，例如若將第1透過控制部11之線寬尺寸設為CD1(μm)且CD1≧3，則邊際區域13之寬度M1較佳為充分小於主區域14之尺寸M2。 In the transfer pattern of the photomask 9 for manufacturing a display device, the pattern line width (CD) is often 1.5 μm or more. Therefore, for example, if the line width dimension of the first transmission control portion 11 is set to CD1 (μm) and CD1≧3, the width M1 of the marginal region 13 is preferably sufficiently smaller than the dimension M2 of the main region 14.

於本實施形態之顯示裝置製造用光罩9中，第1透過控制部11之尺寸CD1較佳為CD1≧5。即，顯示裝置製造用光罩9之第1透過控制部11係大多數部分(主區域14)僅由形成於透明基板2上之第1光學膜3形成，且第2透過控制部12僅由形成於透明基板2上之第2光學膜5形成。因此，於成為顯示裝置製造用光罩9時，可直接發揮各膜所具有之光學特性(透過率、相位偏移量)。即，可將第1光學膜3、第2光學膜5等各個膜所具有之光學特性直接活用作光罩之各部分之特性。因此，可實現設計之自由度較大且忠實地發揮符合設計之特性之顯示裝置製造用光罩9。 In the photomask 9 for manufacturing the display device of this embodiment, the size CD1 of the first transmission control portion 11 is preferably CD1≧5. That is, the first transmission control section 11 of the mask 9 for manufacturing a display device is formed by only the first optical film 3 formed on the transparent substrate 2 and the second transmission control section 12 is formed only by the most part (main region 14) The second optical film 5 formed on the transparent substrate 2 is formed. Therefore, when it is used as the photomask 9 for manufacturing a display device, the optical characteristics (transmittance, phase shift amount) of each film can be directly utilized. That is, the optical characteristics of each film such as the first optical film 3 and the second optical film 5 can be directly utilized as the characteristics of each part of the photomask. Therefore, it is possible to realize the mask 9 for manufacturing the display device that has a greater degree of freedom in design and faithfully exerts the characteristics in accordance with the design.

<第2實施形態之顯示裝置製造用光罩之製造方法> <The manufacturing method of the mask for manufacturing a display device of the second embodiment>

本發明之第2實施形態之顯示裝置製造用光罩之製造方法如下所述。 The manufacturing method of the mask for manufacturing a display device of the second embodiment of the present invention is as follows.

一種顯示裝置製造用光罩之製造方法，其特徵在於：該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，且上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述 透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括：準備於上述透明基板上形成有上述第1光學膜、蝕刻遮罩膜、及第1抗蝕膜之光罩基底之步驟；第1抗蝕圖案形成步驟，其係對於上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案；以上述第1抗蝕圖案為遮罩，蝕刻上述蝕刻遮罩膜，形成蝕刻遮罩膜圖案之步驟；第1圖案化步驟，其係以上述蝕刻遮罩膜圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案；去除上述蝕刻遮罩膜圖案之步驟；於包括上述第1光學膜圖案之上述透明基板上形成上述第2光學膜之步驟；第2抗蝕圖案形成步驟，其係於上述第2光學膜上形成第2抗蝕膜，進行第2繪圖，形成第2抗蝕圖案；及第2圖案化步驟，其係以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案；於上述第1圖案化步驟中，僅蝕刻上述第1光學膜，於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且上述第2抗蝕圖案具有覆蓋上述第2透過控制部之形成區域，並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側增加了特定寬度之邊際之尺寸。 A method for manufacturing a photomask for manufacturing a display device, characterized in that the photomask for manufacturing a display device includes a transfer pattern formed by patterning a first optical film and a second optical film on a transparent substrate, and the above The transfer pattern includes a light-transmitting portion exposing the surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and a second transmission control portion having a portion adjacent to the first transmission control portion The control section has the first transmission control section formed in the above The first optical film on a transparent substrate, and the second transmission control portion has the second optical film formed on the transparent substrate, and the manufacturing method of the mask for manufacturing the display device includes: preparing on the transparent substrate A step of forming a photomask base on which the first optical film, etching mask film, and first resist film are formed; the first resist pattern forming step is to perform a first drawing on the first resist film to form A first resist pattern; using the first resist pattern as a mask, etching the etching mask film to form an etching mask film pattern; the first patterning step, which uses the etching mask film pattern as a mask Mask, etching the first optical film to form a first optical film pattern; removing the etching mask film pattern; forming the second optical film on the transparent substrate including the first optical film pattern; second A resist pattern forming step, which is to form a second resist film on the second optical film, to perform a second drawing, to form a second resist pattern; and a second patterning step to use the second resist pattern For a mask, the second optical film is etched to form a second optical film pattern; in the first patterning step, only the first optical film is etched, and in the second patterning step, only the second optical film is etched Film, and the second resist pattern has a formation area covering the second transmission control portion, and the adjacent first transmission control portion at the edge of the second transmission control portion is increased by a margin of a certain width .

圖4及圖5係表示本發明之第2實施形態之顯示裝置製造用光罩之製造 步驟之側剖圖。 4 and 5 show the manufacturing of the mask for manufacturing the display device according to the second embodiment of the present invention Side section view of the steps.

於該第2實施形態中，對於與上述第1實施形態相對應之部分標註相同之符號進行說明。 In this second embodiment, parts corresponding to those in the above-mentioned first embodiment are denoted by the same reference numerals.

(光罩基底準備步驟) (Preparation steps for mask substrate)

首先，準備圖4(a)所示之光罩基底1。該光罩基底1係於透明基板2上依序積層形成第1光學膜3及蝕刻遮罩膜7，進而於該蝕刻遮罩膜7之上積層形成第1抗蝕膜4而成者。與第1實施形態之不同之處為形成有蝕刻遮罩膜7。 First, prepare the photomask substrate 1 shown in FIG. 4(a). The photomask base 1 is formed by sequentially laminating a first optical film 3 and an etching mask film 7 on a transparent substrate 2, and further forming a first resist film 4 on the etching mask film 7. The difference from the first embodiment is that an etching mask film 7 is formed.

適用於第2實施形態之光罩基底1之透明基板2係與第1實施形態相同。 The transparent substrate 2 applied to the mask base 1 of the second embodiment is the same as that of the first embodiment.

與第1實施形態同樣地，第1光學膜3可設為對於曝光之光具有特定之透光率之半透光膜。又，第1光學膜3可設為對於曝光之光具有特定之透光率，並且於透過時使曝光之光之相位實質上反轉之相位偏移膜。本第2實施形態中亦將第1光學膜3設為具有相位偏移作用之相位偏移膜。又，對於第1光學膜3之表面反射率SR1與背面反射率BR1而言，與第1實施形態相同。 As in the first embodiment, the first optical film 3 can be a semi-transmissive film having a specific light transmittance for exposure light. In addition, the first optical film 3 can be a phase shift film that has a specific light transmittance for exposure light and substantially reverses the phase of the exposure light when passing through. In the second embodiment, the first optical film 3 is also a phase shift film having a phase shift effect. In addition, the surface reflectance SR1 and the back surface reflectance BR1 of the first optical film 3 are the same as in the first embodiment.

第1光學膜3可設為含有Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜，且可自該等之化合物(例如氧化物、氮化物、碳化物、氮氧化物、碳氮化物、碳氮氧化物等)選擇合適者。 The first optical film 3 can be a film containing any one of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, and can be selected from these compounds (such as oxides, nitrides, carbonized , Oxynitride, carbonitride, oxycarbonitride, etc.) select the appropriate one.

尤其，作為第1光學膜3之較佳之材料，可使用Si之化合物(SiON等)、或過渡金屬矽化物(例如Mo、Ti、W、Ta等之矽化物)等或其化合物。作為過渡金屬矽化物之化合物，可列舉氧化物、氮化物、氮氧化物、碳氮氧化物等，較佳為例示MoSi之氧化物、氮化物、氮氧化物、碳氮氧 化物等。本第2實施形態中設為第1光學膜3由包含Si之膜材料、例如包含MoSi之膜材料形成。 In particular, as a preferable material for the first optical film 3, Si compounds (SiON, etc.), transition metal silicides (for example, Mo, Ti, W, Ta, etc. silicides), etc., or their compounds can be used. Examples of transition metal silicide compounds include oxides, nitrides, oxynitrides, oxycarbonitrides, etc., preferably exemplified by MoSi oxides, nitrides, oxynitrides, and carbonitrides. 物等。 Chemicals and so on. In the second embodiment, it is assumed that the first optical film 3 is formed of a film material containing Si, for example, a film material containing MoSi.

蝕刻遮罩膜7較佳為由於與第1光學膜3之間對彼此之蝕刻劑具有耐受性之材料形成。即，蝕刻遮罩膜7與第1光學膜3較佳為由相互具有蝕刻選擇性之材料形成。 The etching mask film 7 is preferably formed of a material that is resistant to the etchant between the first optical film 3 and the first optical film 3. That is, the etching mask film 7 and the first optical film 3 are preferably formed of materials having etching selectivity to each other.

本第2實施形態中，因由包含Si之膜形成第1光學膜3，故可由作為與該第1光學膜3具有蝕刻選擇性之材料之例如包含Cr之膜材料形成蝕刻遮罩膜7。具體而言，蝕刻遮罩膜7較佳為含有Cr之化合物、例如Cr之氧化物、氮化物、氮氧化物、碳氮氧化物中之1種或複數種。於該情形時，蝕刻遮罩膜7可設為不含Si之膜。若將蝕刻遮罩膜7設為不含Si之膜，則與含有Si之情形相比，於與第1抗蝕膜4之密接性提昇之方面較為有利。即，蝕刻遮罩膜與抗蝕膜之密接性較佳為大於第1光學膜3與抗蝕膜之密接性。 In the second embodiment, since the first optical film 3 is formed of a film containing Si, the etching mask film 7 can be formed of a film material containing Cr, which is a material having etching selectivity with the first optical film 3. Specifically, the etching mask film 7 is preferably a compound containing Cr, for example, one or more of Cr oxides, nitrides, oxynitrides, and oxycarbonitrides. In this case, the etching mask film 7 may be a film that does not contain Si. If the etching mask film 7 is a film that does not contain Si, it is advantageous in terms of improving the adhesion with the first resist film 4 compared to the case of containing Si. That is, the adhesion between the etching mask film and the resist film is preferably greater than the adhesion between the first optical film 3 and the resist film.

第1抗蝕膜4係與上述第1實施形態相同。 The first resist film 4 is the same as the first embodiment described above.

(第1抗蝕圖案形成步驟) (The first resist pattern formation step)

繼而，如圖4(b)所示，藉由將第1抗蝕膜4圖案化，而形成第1抗蝕圖案4a。於該步驟中，使用繪圖裝置對上述光罩基底1繪製所需之圖案(第1繪圖)。用於繪圖之能量線係與上述第1實施形態相同。對光罩基底1進行繪圖後，進行顯影，藉此形成第1抗蝕圖案4a。第1抗蝕圖案4a係設為覆蓋第1透過控制部之形成區域(B區域)，且於其他區域(A區域、C區域)具有開口之形狀。 Then, as shown in FIG. 4(b), by patterning the first resist film 4, the first resist pattern 4a is formed. In this step, a drawing device is used to draw a desired pattern (first drawing) on the above-mentioned photomask substrate 1. The energy lines used for drawing are the same as in the first embodiment described above. After drawing the photomask base 1, development is performed, thereby forming the first resist pattern 4a. The first resist pattern 4a is configured to cover the formation region (region B) of the first transmission control portion, and has an opening shape in the other regions (region A, region C).

(蝕刻遮罩膜圖案形成步驟) (Etching mask film pattern formation step)

繼而，如圖4(c)所示，藉由以第1抗蝕圖案4a為遮罩，將蝕刻遮罩膜7進行蝕刻，而形成蝕刻遮罩膜圖案7a。此時，藉由蝕刻而將於第1抗蝕圖 案4a之開口部露出之蝕刻遮罩膜7去除。蝕刻遮罩膜7之蝕刻既可為乾式蝕刻，亦可為濕式蝕刻。本實施形態係由含有Cr之膜形成蝕刻遮罩膜7，故可較佳地適用使用Cr用之蝕刻液之濕式蝕刻。 Then, as shown in FIG. 4(c), the etching mask film 7 is etched by using the first resist pattern 4a as a mask to form an etching mask film pattern 7a. At this time, by etching, the first resist pattern The etching mask film 7 exposed at the opening of case 4a is removed. The etching of the etching mask film 7 may be dry etching or wet etching. In this embodiment, the etching mask film 7 is formed of a film containing Cr, so wet etching using an etching solution for Cr can be preferably applied.

(第1圖案化步驟) (The first patterning step)

繼而，與上一步驟更換蝕刻劑，如圖4(d)所示，藉由以蝕刻遮罩膜圖案7a為遮罩，蝕刻第1光學膜3，而形成第1光學膜圖案3a。此時，藉由蝕刻而將於蝕刻遮罩膜圖案7a之開口部露出之第1光學膜3去除。本實施形態係由含有Si之膜(例如含MoSi膜)形成第1光學膜3，故可較佳地適用使用包含氫氟酸之蝕刻液之濕式蝕刻。 Then, the etchant is replaced with the previous step. As shown in FIG. 4(d), the first optical film 3 is etched by using the etching mask film pattern 7a as a mask to form the first optical film pattern 3a. At this time, the first optical film 3 exposed at the opening of the etching mask film pattern 7a is removed by etching. In this embodiment, the first optical film 3 is formed from a film containing Si (for example, a MoSi-containing film), so wet etching using an etchant containing hydrofluoric acid can be preferably applied.

第1圖案化步驟係與上述第1實施形態同樣地僅以第1光學膜3為蝕刻對象，故第1光學膜圖案3a之形狀或第1透過控制部之區域於該階段劃定。 The first patterning step uses only the first optical film 3 as an etching target similarly to the above-mentioned first embodiment, so the shape of the first optical film pattern 3a or the area of the first transmission control portion is defined at this stage.

(第1抗蝕劑剝離步驟) (The first resist stripping step)

繼而，如圖4(e)所示，剝離第1抗蝕圖案4a。第1抗蝕圖案4a之剝離亦可於形成蝕刻遮罩膜圖案7a後，且進行第1光學膜3之蝕刻之前進行。 Then, as shown in FIG. 4(e), the first resist pattern 4a is peeled off. The peeling of the first resist pattern 4a may be performed after the etching mask film pattern 7a is formed and before the etching of the first optical film 3 is performed.

(蝕刻遮罩膜圖案去除步驟) (Etching mask film pattern removal step)

繼而，如圖4(f)所示，去除蝕刻遮罩膜圖案7a。藉此，可獲得附帶第1光學膜圖案3a之透明基板2。 Then, as shown in FIG. 4(f), the etching mask film pattern 7a is removed. Thereby, the transparent substrate 2 with the first optical film pattern 3a can be obtained.

(第2光學膜形成步驟) (Second Optical Film Formation Step)

繼而，如圖5(g)所示，於包括第1光學膜圖案3a之透明基板2上形成第2光學膜5。第2光學膜5係與上述第1實施形態同樣地適用濺鍍法等公知之方法，形成於透明基板2上之轉印用圖案形成區域整體。 Then, as shown in FIG. 5(g), the second optical film 5 is formed on the transparent substrate 2 including the first optical film pattern 3a. The second optical film 5 is formed on the entire transparent substrate 2 by applying a known method such as a sputtering method in the same manner as in the above-mentioned first embodiment.

於本第2實施形態中，與上述第1實施形態同樣地，將第2光學膜5設為低相位半透光膜。又，對於第2光學膜5之表面反射率SR2與背面反射率 BR2而言，與第1實施形態相同。 In this second embodiment, similarly to the above-mentioned first embodiment, the second optical film 5 is a low-phase semi-transmissive film. In addition, the surface reflectance SR2 and the back surface reflectance of the second optical film 5 BR2 is the same as the first embodiment.

第2光學膜5例如可設為含有Cr、Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜，且可自該等之化合物(例如氧化物、氮化物、碳化物、氮氧化物、碳氮化物、碳氮氧化物等)選擇合適者。 The second optical film 5 can be, for example, a film containing any one of Cr, Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, and can be selected from these compounds (such as oxides, nitrogen Choose suitable ones, such as chemical compounds, carbides, oxynitrides, carbonitrides, oxycarbonitrides, etc.).

其中，第1光學膜3與第2光學膜5較佳為由對於彼此之蝕刻劑具有耐受性之材料形成。即，第1光學膜3與第2光學膜5較理想為相互具有蝕刻選擇性之材料。例如於第1光學膜3為包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者之膜之情形時，第2光學膜5設為包含與其不同之材料即Cr之膜。 Among them, the first optical film 3 and the second optical film 5 are preferably formed of materials that are resistant to each other's etchant. That is, the first optical film 3 and the second optical film 5 are preferably materials having etching selectivity to each other. For example, when the first optical film 3 is a film containing any one of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, the second optical film 5 is set to include a material different from it. Cr film.

因此，例如於第1光學膜3中使用含Si材料之情形時，較佳為第2光學膜5中使用含Cr材料。若列舉具體例，則於第1光學膜3中使用含MoSi材料之情形時，較佳為第2光學膜5中使用Cr化合物。 Therefore, for example, when a Si-containing material is used in the first optical film 3, it is preferable to use a Cr-containing material in the second optical film 5. If a specific example is given, when a MoSi-containing material is used in the first optical film 3, it is preferable to use a Cr compound in the second optical film 5.

以下，與上述第1實施形態同樣地，藉由依序進行第2抗蝕膜形成步驟(圖5(h))、第2抗蝕圖案形成步驟(圖5(i))、第2圖案化步驟(圖5(j))、第2抗蝕劑剝離步驟(圖5(k))，而完成顯示裝置製造用光罩9。 Hereinafter, similarly to the above-mentioned first embodiment, the second resist film forming step (FIG. 5(h)), the second resist pattern forming step (FIG. 5(i)), and the second patterning step are sequentially performed. (FIG. 5(j)), the second resist stripping step (FIG. 5(k)), and the photomask 9 for manufacturing a display device is completed.

於本第2實施形態之顯示裝置製造用光罩之製造方法中，在第1抗蝕劑剝離步驟(圖4(e))後之蝕刻遮罩膜圖案去除步驟(圖4(f))中去除蝕刻遮罩膜圖案7a，但並不限於此。例如亦可藉由於第1抗蝕劑剝離步驟(圖4(e))之後追加光微影法步驟，而使蝕刻遮罩膜圖案7a之一部分殘留，且將其用於圖案化。具體而言，例如亦可藉由以蝕刻遮罩膜7為遮光膜，且將該蝕刻遮罩膜7於上述光微影法步驟中圖案化，而於轉印用圖案以外之區域(光罩之外緣附近等)，形成遮罩圖案等。當然，亦可於轉印用圖案內之特定部分，使蝕刻遮罩膜圖案7a之一部分殘留。 In the manufacturing method of the photomask for manufacturing the display device of the second embodiment, in the etching mask film pattern removal step (FIG. 4(f)) after the first resist stripping step (FIG. 4(e)) The etching mask film pattern 7a is removed, but it is not limited to this. For example, by adding a photolithography step after the first resist stripping step (FIG. 4(e)), a part of the etching mask film pattern 7a may remain, and this may be used for patterning. Specifically, for example, the etching mask film 7 may be used as a light-shielding film, and the etching mask film 7 may be patterned in the above-mentioned photolithography step, so that the area other than the transfer pattern (the mask Near the outer edge, etc.), forming a mask pattern, etc. Of course, it is also possible to leave a part of the etching mask film pattern 7a in a specific part of the transfer pattern.

又，於本第2實施形態之顯示裝置製造用光罩之製造方法中，省略了與上述第1實施形態重複之說明。因此，第1實施形態之製造方法中記述之內容之中無特別阻礙者均可同樣適用於第2實施形態。 In addition, in the manufacturing method of the photomask for manufacturing the display device of the second embodiment, the description overlapping with the above-mentioned first embodiment is omitted. Therefore, the contents described in the manufacturing method of the first embodiment can be applied to the second embodiment in the same way if there is no particular obstacle.

又，本發明之實施形態之顯示裝置製造用光罩9(圖3)可藉由上述第1實施形態之製造方法、或上述第2實施形態之製造方法中之任一者製造。 In addition, the photomask 9 (FIG. 3) for manufacturing the display device according to the embodiment of the present invention can be manufactured by either the manufacturing method of the above-mentioned first embodiment or the manufacturing method of the above-mentioned second embodiment.

於本發明之實施形態之顯示裝置製造用光罩9中，第1透過控制部11係除邊際區域13以外，於透明基板2上僅形成有第1光學膜3，且第2透過控制部12係於透明基板2上僅形成有第2光學膜5。因此，於第1透過控制部11之主區域14，第1光學膜3所具有之光學特性得以發揮，且於第2透過控制部12，第2光學膜5所具有之光學特性得以發揮。 In the photomask 9 for manufacturing a display device according to the embodiment of the present invention, the first transmission control section 11 except for the marginal region 13 has only the first optical film 3 formed on the transparent substrate 2 and the second transmission control section 12 Only the second optical film 5 is formed on the transparent substrate 2. Therefore, in the main region 14 of the first transmission control portion 11, the optical characteristics of the first optical film 3 are exhibited, and in the second transmission control portion 12, the optical characteristics of the second optical film 5 are exhibited.

又，於第1透過控制部11與第2透過控制部12相鄰之部分，在作為第1透過控制部11側之邊緣部分之邊際區域13，存在第1光學膜3與第2光學膜5所造成之窄幅之積層部分。其中，該積層部分係實質上作為遮光部發揮功能之部分，故因積層所導致之透光率之降低不會成為問題，故具有可藉由上述相位偏移效應獲得光強度分佈之鮮明變化之優點。 In addition, in a portion where the first transmission control portion 11 and the second transmission control portion 12 are adjacent to each other, the first optical film 3 and the second optical film 5 exist in the marginal area 13 which is the edge portion of the first transmission control portion 11 The resulting narrow layered part. Among them, the laminated part is essentially a part that functions as a light-shielding part, so the decrease in light transmittance caused by the laminated layer does not become a problem, so it has the ability to obtain a sharp change in the light intensity distribution by the above-mentioned phase shift effect advantage.

又，用以獲得顯示裝置製造用光罩9之光罩基底1係於第1實施形態中在透明基板2上形成有第1光學膜3及第1抗蝕膜4(圖1(a))，且於第2實施形態中在透明基板2上形成有第1光學膜3、蝕刻遮罩膜7及第1抗蝕膜4之構成(圖4(a))。其中，於任一實施形態中，最終成為形成轉印用圖案之光學膜者均僅為形成於透明基板2上之第1光學膜3。因此，如上述實施形態中所述，將第1光學膜3設為相位偏移膜較為有利。其原因如下所述。一般而言，半透光膜(低相位半透光膜)作為市場之需求可能存在各種透光率者，無法預先製造。與此相對，相位偏移膜係市場所需求之規格大致固定。因 此，如本發明之實施形態般，可藉由預先準備將第1光學膜3作為相位偏移膜形成於透明基板2上所成之光罩基底1，而提昇生產效率，於短交期內滿足遮罩使用者之需要。 In addition, the mask base 1 used to obtain the mask 9 for manufacturing the display device is formed on the transparent substrate 2 in the first embodiment with the first optical film 3 and the first resist film 4 (FIG. 1(a)) And in the second embodiment, the first optical film 3, the etching mask film 7, and the first resist film 4 are formed on the transparent substrate 2 (FIG. 4(a)). Among them, in any embodiment, what ultimately becomes the optical film forming the transfer pattern is only the first optical film 3 formed on the transparent substrate 2. Therefore, as described in the above embodiment, it is advantageous to use the first optical film 3 as a phase shift film. The reason is as follows. Generally speaking, semi-transparent films (low-phase semi-transparent films) may have various transmittances as market requirements, and cannot be manufactured in advance. In contrast, the specifications required by the phase shift film market are generally fixed. because Therefore, as in the embodiment of the present invention, the first optical film 3 as a phase shift film is formed on the transparent substrate 2 by preparing the mask base 1 in advance to improve the production efficiency and within a short delivery period. Meet the needs of mask users.

又，根據本發明之實施形態之顯示裝置製造用光罩9之製造方法，將第1光學膜3及第2光學膜5分別藉由蝕刻單一膜之步驟進行圖案化。即，不存在以同一蝕刻劑連續蝕刻將第1光學膜3與第2光學膜5積層而成之2個膜之步驟。因此，可形成CD精度充分高之轉印用圖案。 Furthermore, according to the manufacturing method of the photomask 9 for manufacturing a display device of the embodiment of the present invention, the first optical film 3 and the second optical film 5 are patterned by a step of etching a single film, respectively. That is, there is no step of successively etching the two films formed by stacking the first optical film 3 and the second optical film 5 with the same etchant. Therefore, a pattern for transfer with sufficiently high CD accuracy can be formed.

進而，藉由本發明之實施形態之製造方法所獲得之顯示裝置製造用光罩9具有以下優點，即，於與第2透過控制部12相鄰之第1透過控制部11之邊緣，可利用相位偏移效應獲得對比度之提昇，另一方面，於邊緣以外之部分，分別準確地發揮對單一膜設計所得之光學特性。 Furthermore, the mask 9 for manufacturing a display device obtained by the manufacturing method of the embodiment of the present invention has the advantage that the edge of the first transmission control portion 11 adjacent to the second transmission control portion 12 can use the phase The offset effect improves the contrast. On the other hand, the parts other than the edges accurately display the optical characteristics obtained from the single film design.

本發明之實施形態之顯示裝置製造用光罩9具有以下優點，即，於顯示裝置等之製造中，作為減少所使用光罩之片數之多階光罩較為有用，而且形成於被轉印體上之抗蝕圖案之形狀藉由上述相位偏移效應而成為側面傾斜較少之形狀。因此，對顯示裝置之薄膜電晶體(Thin Film Transistor，TFT)層等較為有用。 The photomask 9 for manufacturing the display device according to the embodiment of the present invention has the advantage that it is useful as a multi-step photomask that reduces the number of photomasks used in the manufacture of display devices, etc. The shape of the resist pattern on the body becomes a shape with less side tilt due to the above-mentioned phase shift effect. Therefore, it is more useful for Thin Film Transistor (TFT) layers of display devices.

於此種用途中，利用自對向之兩方向由第1透過控制部11夾入第2透過控制部12之形狀之轉印用圖案。於此種轉印用圖案中，尤其可藉由相位偏移效應而以較高之對比度形成抗蝕圖案之側面形狀，故較為有效。又，亦可將本發明適用於由第1透過控制部11包圍第2透過控制部12之形狀之轉印圖案。 In such an application, a transfer pattern in which the shape of the second transmission control portion 12 is sandwiched by the first transmission control portion 11 in two directions from opposite directions is used. In this type of transfer pattern, the side shape of the resist pattern can be formed with a higher contrast by the phase shift effect, and is therefore more effective. In addition, the present invention can also be applied to a transfer pattern of a shape in which the first transmission control portion 11 surrounds the second transmission control portion 12.

當然，亦可用於形成彩色濾光片等中使用之感光性樹脂所成之立體形狀(感光性間隔件等)之用途。 Of course, it can also be used for the purpose of forming three-dimensional shapes (photosensitive spacers, etc.) formed by photosensitive resins used in color filters and the like.

又，本發明亦可作為包括以下步驟之顯示裝置之製造方法而實現，即，準備利用上述第1實施形態或第2實施形態之製造方法製造之顯示裝置製造用光罩9、或上述實施形態之顯示裝置製造用光罩9；及藉由曝光裝置而將顯示裝置製造用光罩9所具有之轉印用圖案曝光。於顯示裝置之製造方法中，較佳為使用顯示裝置製造用光罩9作為多階光罩。於該情形時，藉由經由安裝於曝光裝置之顯示裝置製造用光罩9，將被轉印體上之光阻膜曝光，而將顯示裝置製造用光罩9之轉印用圖案轉印至被轉印體。藉此，於被轉印體上，可藉由透光部10、第1透過控制部11及第2透過控制部12之透光率之不同，而形成複數個具有殘餘膜厚之立體形狀之抗蝕圖案。於包含此種步驟之顯示裝置之製造方法中，使用顯示裝置製造用光罩9較為有利。 In addition, the present invention can also be realized as a method of manufacturing a display device including the steps of preparing a mask 9 for manufacturing a display device to be manufactured by the manufacturing method of the first embodiment or the second embodiment, or the foregoing embodiment The mask 9 for manufacturing the display device; and the transfer pattern possessed by the mask 9 for manufacturing the display device is exposed by an exposure device. In the manufacturing method of the display device, it is preferable to use the photomask 9 for manufacturing the display device as a multi-step photomask. In this case, by exposing the photoresist film on the object to be transferred through the display device manufacturing photomask 9 mounted on the exposure device, the transfer pattern of the display device manufacturing photomask 9 is transferred to The body to be transferred. Thereby, on the body to be transferred, a plurality of three-dimensional shapes with residual film thickness can be formed by the difference in the light transmittance of the light-transmitting portion 10, the first transmission control portion 11, and the second transmission control portion 12 Resist pattern. In the manufacturing method of the display device including such steps, it is advantageous to use the mask 9 for manufacturing the display device.

本發明之顯示裝置製造用光罩可較佳地用於利用作為LCD(Liquid Crystal Display)用途或FPD(Flat Panel Display)用途已為人知之曝光裝置之曝光。作為此種曝光裝置，可使用如下投影曝光裝置，該投影曝光裝置係例如以i線、h線、g線中之任一者為曝光之光，又，較佳為使用包括i線、h線、g線全部之曝光之光，且具有數值孔徑(NA)為0.08~0.15且同調因子(σ)為0.7~0.9左右之等倍光學系統。當然，本發明之顯示裝置製造用光罩亦可用作近接式曝光用之光罩。 The photomask for manufacturing the display device of the present invention can be preferably used for exposure using a known exposure device for LCD (Liquid Crystal Display) use or FPD (Flat Panel Display) use. As this type of exposure device, the following projection exposure device can be used. The projection exposure device uses, for example, any one of i-line, h-line, and g-line as the light for exposure, and preferably includes i-line and h-line , G-line all exposure light, and has an equal magnification optical system with a numerical aperture (NA) of 0.08~0.15 and a coherence factor (σ) of about 0.7~0.9. Of course, the photomask for manufacturing the display device of the present invention can also be used as a photomask for proximity exposure.

本發明之顯示裝置製造用光罩尤其適合用於包括液晶顯示裝置、有機EL顯示裝置等之顯示裝置之製造。又，本發明之顯示裝置製造用光罩可用於該等顯示裝置之各種部位(接觸孔、薄膜電晶體之源極(Source，S)/汲極(Drain，D)層、彩色濾光片之感光性間隔件用層等)之形成。 The photomask for manufacturing a display device of the present invention is particularly suitable for manufacturing display devices including liquid crystal display devices, organic EL display devices, and the like. In addition, the photomask for manufacturing the display device of the present invention can be used in various parts of the display device (contact holes, source (S)/drain (D)) layers of thin film transistors, and color filters. Photo spacer layer etc.) formation.

又，本發明之顯示裝置製造用光罩於發揮本發明之作用效果之範圍 內，除第1光學膜3及第2光學膜5以外，亦可具有追加之膜或膜圖案。例如亦可於透明基板2之正面(轉印用圖案面)側或背面側配置光學濾光膜、導電膜、絕緣膜、抗反射膜等。 In addition, the photomask for manufacturing the display device of the present invention is within the scope of exerting the effects of the present invention Inside, in addition to the 1st optical film 3 and the 2nd optical film 5, you may have an additional film or film pattern. For example, an optical filter film, a conductive film, an insulating film, an anti-reflection film, etc. may be arranged on the front side (the pattern surface for transfer) or the back side of the transparent substrate 2.

2‧‧‧透明基板 2‧‧‧Transparent substrate

3‧‧‧第1光學膜 3‧‧‧The first optical film

3a‧‧‧第1光學膜圖案 3a‧‧‧The first optical film pattern

5‧‧‧第2光學膜 5‧‧‧Second optical film

5a‧‧‧第2光學膜圖案 5a‧‧‧The second optical film pattern

6‧‧‧第2抗蝕膜 6‧‧‧Second resist film

6a‧‧‧第2抗蝕圖案 6a‧‧‧Second resist pattern

9‧‧‧顯示裝置製造用光罩 9‧‧‧Mask for display device manufacturing

A‧‧‧區域 A‧‧‧area

B‧‧‧區域 B‧‧‧area

C‧‧‧區域 C‧‧‧Region

M1‧‧‧寬度 M1‧‧‧Width

M2‧‧‧寬度 M2‧‧‧Width

Claims (13)

一種顯示裝置製造用光罩之製造方法，其特徵在於：該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，且上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括：準備於上述透明基板上形成有上述第1光學膜及第1抗蝕膜之光罩基底之步驟；第1抗蝕圖案形成步驟，對上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案；第1圖案化步驟，以上述第1抗蝕圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案；第2抗蝕圖案形成步驟，於包括上述第1光學膜圖案之上述透明基板上所形成之上述第2光學膜上形成第2抗蝕膜，且進行第2繪圖，形成第2抗蝕圖案；及第2圖案化步驟，以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案；於上述第1圖案化步驟中，僅蝕刻上述第1光學膜，於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且， 上述第2抗蝕圖案具有覆蓋上述第2透過控制部之形成區域、並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側增加了特定寬度之邊際的尺寸。 A method for manufacturing a photomask for manufacturing a display device, characterized in that the photomask for manufacturing a display device includes a transfer pattern formed by patterning a first optical film and a second optical film on a transparent substrate, and the above The transfer pattern includes a light-transmitting portion exposing the surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and a second transmission control portion having a portion adjacent to the first transmission control portion The control section has the first optical film formed on the transparent substrate in the first transmission control section, and the second optical film formed on the transparent substrate in the second transmission control section, and the display device The manufacturing method of the manufacturing photomask includes: preparing a photomask base on which the first optical film and the first resist film are formed on the transparent substrate; Perform a first drawing to form a first resist pattern; a first patterning step, using the first resist pattern as a mask, etching the first optical film to form a first optical film pattern; second resist pattern forming step , Forming a second resist film on the second optical film formed on the transparent substrate including the first optical film pattern, and performing a second drawing to form a second resist pattern; and a second patterning step, Using the second resist pattern as a mask, the second optical film is etched to form a second optical film pattern; in the first patterning step, only the first optical film is etched, and in the second patterning step , Only the above-mentioned second optical film is etched, and, The second resist pattern has a size that covers the formation area of the second transmission control portion, and is adjacent to the edge of the second transmission control portion on the side of the first transmission control portion with a margin increased by a certain width. 如請求項1之顯示裝置製造用光罩之製造方法，其中上述第1光學膜包含Cr，且上述第2光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者。 The method for manufacturing a photomask for manufacturing a display device of claim 1, wherein the first optical film includes Cr, and the second optical film includes Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf. Either. 一種顯示裝置製造用光罩之製造方法，其特徵在於：該顯示裝置製造用光罩包括於透明基板上將第1光學膜及第2光學膜分別圖案化而形成之轉印用圖案，且上述轉印用圖案包括露出上述透明基板之表面之透光部、具有與上述透光部相鄰之部分之第1透過控制部、及具有與上述第1透過控制部相鄰之部分之第2透過控制部，於上述第1透過控制部具有形成於上述透明基板上之上述第1光學膜，且於上述第2透過控制部具有形成於上述透明基板上之上述第2光學膜，且該顯示裝置製造用光罩之製造方法包括：準備於上述透明基板上形成有上述第1光學膜、蝕刻遮罩膜、及第1抗蝕膜之光罩基底之步驟；第1抗蝕圖案形成步驟，對上述第1抗蝕膜進行第1繪圖，形成第1抗蝕圖案；以上述第1抗蝕圖案為遮罩，蝕刻上述蝕刻遮罩膜，形成蝕刻遮罩膜圖案之步驟； 第1圖案化步驟，以上述蝕刻遮罩膜圖案為遮罩，蝕刻上述第1光學膜，形成第1光學膜圖案；將上述蝕刻遮罩膜圖案去除之步驟；第2抗蝕圖案形成步驟，於包括上述第1光學膜圖案之上述透明基板上所形成之上述第2光學膜上形成第2抗蝕膜，且進行第2繪圖，形成第2抗蝕圖案；及第2圖案化步驟，以上述第2抗蝕圖案為遮罩，蝕刻上述第2光學膜，形成第2光學膜圖案；於上述第1圖案化步驟中，僅蝕刻上述第1光學膜，於上述第2圖案化步驟中，僅蝕刻上述第2光學膜，且，上述第2抗蝕圖案具有覆蓋上述第2透過控制部之形成區域、並且於上述第2透過控制部之邊緣處相鄰之上述第1透過控制部側增加了特定寬度之邊際的尺寸。 A method for manufacturing a photomask for manufacturing a display device, characterized in that the photomask for manufacturing a display device includes a transfer pattern formed by patterning a first optical film and a second optical film on a transparent substrate, and the above The transfer pattern includes a light-transmitting portion exposing the surface of the transparent substrate, a first transmission control portion having a portion adjacent to the light-transmitting portion, and a second transmission control portion having a portion adjacent to the first transmission control portion The control section has the first optical film formed on the transparent substrate in the first transmission control section, and the second optical film formed on the transparent substrate in the second transmission control section, and the display device The manufacturing method of the manufacturing photomask includes: preparing a photomask base on which the first optical film, the etching mask film, and the first resist film are formed on the transparent substrate; the first resist pattern forming step, The step of performing a first drawing on the first resist film to form a first resist pattern; using the first resist pattern as a mask to etch the etching mask film to form an etching mask film pattern; The first patterning step is to etch the first optical film to form a first optical film pattern by using the etching mask film pattern as a mask; removing the etching mask film pattern; and forming a second resist pattern, Forming a second resist film on the second optical film formed on the transparent substrate including the first optical film pattern, and performing a second drawing to form a second resist pattern; and a second patterning step to The second resist pattern is a mask, and the second optical film is etched to form a second optical film pattern; in the first patterning step, only the first optical film is etched, and in the second patterning step, Only the second optical film is etched, and the second resist pattern has a formation area covering the second transmission control portion, and increases on the side of the first transmission control portion adjacent to the edge of the second transmission control portion The size of the margin of a certain width. 如請求項3之顯示裝置製造用光罩之製造方法，其中上述第1光學膜包含Si、Mo、Ni、Ta、Zr、Al、Ti、Nb、Hf中之任一者，且上述第2光學膜包含Cr。 The method for manufacturing a photomask for manufacturing a display device of claim 3, wherein the first optical film includes any one of Si, Mo, Ni, Ta, Zr, Al, Ti, Nb, and Hf, and the second optical film The film contains Cr. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中上述第1光學膜與上述第2光學膜對於彼此之蝕刻劑具有耐受性。 The method for manufacturing a photomask for manufacturing a display device according to any one of claims 1 to 4, wherein the first optical film and the second optical film are resistant to each other's etchant. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光 之代表波長光的透光率設為T1(%)，相位偏移量設為Φ 1(度)時，2≦T1≦40 150≦Φ 1≦210。 The method for manufacturing a photomask for manufacturing a display device according to any one of claims 1 to 4, wherein the exposure light used in exposing the first optical film to the photomask for manufacturing the display device is When the transmittance of the representative wavelength light is set to T1 (%), and the phase shift is set to Φ 1 (degree), 2≦T1≦40 150≦Φ 1≦210. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的表面反射率設為SR1(%)時，2≦SR1≦20。 The method for manufacturing a photomask for manufacturing a display device according to any one of claims 1 to 4, wherein the light of the representative wavelength of the exposure light used in exposing the first optical film to the photomask for manufacturing the display device is When the surface reflectance is set to SR1 (%), 2≦SR1≦20. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中於將上述第1光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的背面反射率設為BR1(%)時，2≦BR1≦20。 The method for manufacturing a photomask for manufacturing a display device according to any one of claims 1 to 4, wherein the light of the representative wavelength of the exposure light used in exposing the first optical film to the photomask for manufacturing the display device is When the back reflectance is set to BR1 (%), 2≦BR1≦20. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的透光率設為T2(%)，且相位偏移量設為Φ 2(度)時，10≦T2≦60 0<Φ 2≦90。 The method for manufacturing a photomask for manufacturing a display device according to any one of claims 1 to 4, wherein the light of the representative wavelength of the exposure light used in exposing the second optical film to the photomask for manufacturing the display device is When the light transmittance is set to T2 (%) and the phase shift is set to Φ 2 (degrees), 10≦T2≦60 0<Φ 2≦90. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的表面反射率設為SR2(%)時， 2≦SR2≦20。 The method for manufacturing a photomask for manufacturing a display device according to any one of claims 1 to 4, wherein the light of the representative wavelength of the exposure light used in exposing the second optical film to the photomask for manufacturing the display device is When the surface reflectance is set to SR2(%), 2≦SR2≦20. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中於將上述第2光學膜對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的背面反射率設為BR2(%)時，2≦BR2≦20。 The method for manufacturing a photomask for manufacturing a display device according to any one of claims 1 to 4, wherein the light of the representative wavelength of the exposure light used in exposing the second optical film to the photomask for manufacturing the display device is When the back surface reflectance is set to BR2 (%), 2≦BR2≦20. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中於將上述邊際之寬度設為M1(μm)時，0.2≦M1≦1.0。 The method for manufacturing a mask for manufacturing a display device according to any one of claims 1 to 4, wherein when the width of the margin is set to M1 (μm), 0.2≦M1≦1.0. 如請求項1至4中任一項之顯示裝置製造用光罩之製造方法，其中上述第1透過控制部之邊際之區域與上述第2透過控制部對於上述顯示裝置製造用光罩之曝光中所用之曝光之光之代表波長光的相位差δ(度)為150≦δ≦210。 The method for manufacturing a mask for manufacturing a display device according to any one of claims 1 to 4, wherein the marginal area of the first transmission control portion and the second transmission control portion are in the process of exposing the mask for manufacturing the display device The phase difference δ (degree) of the representative wavelength light of the exposure light used is 150≦δ≦210.
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