201131283 六、發明說明： 【發明所屬之技術領域】 本發明係關於液晶顯示裝置（Liquid Crystal Display :以 下稱為LCD)等之電子裝置製造等所使用之多調式光罩之 製造方法及多調式光罩用基底、與電子裝置之製造方法， 尤其是關於適宜用於薄膜電晶體液晶顯示裝置之製造所使 用之薄膜電晶體基板（TFT基板）之製造的多調式光罩之製 造方法及多調式光罩用基底，與電子裝置之製造方法。 【先前技術】 目前，在LCD領域，由於薄膜電晶體液晶顯示裝置（Thin Film Transistor Liquid Crystal Display :以下，稱為 TFT-LCD)相較於CRT(陰極射線管），具有容易薄型化且消耗電 力低之優點，故目前商品化急速發展。TFT-LCD之概略結 構為於成矩陣狀排列之各像素排列有TFT之結構之TFT基 板，與對應於各像素而排列有紅色、綠色及藍色之像素圖 案之彩色濾光片在液晶相介存之情形下重合。TFT-LCD製 造步驟數多，僅TFT基板就需使用5〜6片光罩進行製造。 在如此之狀況下，有人提出有使用4片光罩進行TFT基板之 製造之方法。 該方法係使用具有遮光部、透光部及半透光部（灰階部） 之光罩（3調式等之多調式光罩），藉此減少使用之光罩片 數。此處，半透光部是指使用光罩於被轉印體轉印圖案 時，使透射之曝光光之透射量降低特定量，從而控制被轉 印體上之光阻膜之顯影後之殘膜量的部分，且將同時具備 151350.doc 201131283 如此之半透光部、遮光部、及透光部之光罩稱為多調式光 罩（亦稱為灰階光罩）^ 作為此處所使用之多調式光罩，先前已知有上述半透光 部之結構為在用於圖案轉印之LCD用曝光機之解析界限以 下之微細圖案中形成者。如此之微細圖案型之半透光部之 選擇有將用於維持遮光部與透光部之中間之半調效果之微 細圖案採用線與空間類型或採用點（網點）類型，或採用另 外之圖案。且，線與空間類型之情形，採用多大之線寬， 光透射之邛为與遮光之部分之比率為多少，整體之透射率 «又汁成怎樣之程度等，微細圖案類型之半透光部均必須多 方考慮進行設計。X，即使在光罩之製造中，亦要求有線 寬之中“值之官理，光罩内之線寬之偏差管理等非常難之 生產技術β 因此’先前提出有將半透光部設為半透射性之半透 膜藉由使用如此之半透光膜，可減少半透光部分之曝 行半調曝光。使用半透光膜時，設計方面需研究彳 體之透射率需為客4、，水罢士工〜 (辛材）切厂 需選擇半透光膜之心 =广藉此方能生產光罩。因此，光罩之㈣ 例如^膜之膜厚控制U，管理相對較為容易。又 ==調式光罩之半透光部形成m基板之通道部i =地於若為半透光膜，則可藉由光微_ 易也進仃圖案化，故即使TF丁通 、 案形狀亦可進行。 。》狀為複雜之層 於日本特開鳩-7观號公報（專利文獻^中揭示有以年[Technical Field] The present invention relates to a method of manufacturing a multi-tone mask used in the manufacture of an electronic device such as a liquid crystal display device (hereinafter referred to as LCD), and a multi-tone light. A method for manufacturing a mask, a method for manufacturing an electronic device, and a method for manufacturing a multi-tone mask suitable for manufacturing a thin film transistor substrate (TFT substrate) used for manufacturing a thin film transistor liquid crystal display device, and a multi-mode light A cover substrate and a method of manufacturing an electronic device. [Prior Art] At present, in the field of LCDs, Thin Film Transistor Liquid Crystal Display (hereinafter referred to as TFT-LCD) is thinner and consumes power than CRT (Cathode Ray Tube). The advantages of low, so the current rapid development of commercialization. The schematic structure of the TFT-LCD is a TFT substrate in which TFTs are arranged in a matrix arranged in a matrix, and a color filter in which pixel patterns of red, green, and blue are arranged corresponding to respective pixels is in the liquid crystal phase. In the case of existence, coincide. The number of TFT-LCD manufacturing steps is large, and only a TFT substrate needs to be manufactured using 5 to 6 photomasks. Under such circumstances, there has been proposed a method of manufacturing a TFT substrate using four photomasks. In this method, a mask (a multi-tone mask such as a three-tone type) having a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion (gray-scale portion) is used, thereby reducing the number of masks used. Here, the semi-transmissive portion refers to a reduction in the amount of transmission of the transmitted exposure light by a specific amount when the transfer pattern is transferred by the photomask, thereby controlling the development of the photoresist film on the transfer target. The part of the film amount, and will have 151350.doc 201131283 such a semi-transmissive portion, a light-shielding portion, and a light-transmissive portion of the mask is called a multi-tone mask (also known as a gray scale mask) ^ as used here In the multi-tone mask, it has been previously known that the semi-transmissive portion is formed in a fine pattern below the resolution limit of an exposure machine for pattern transfer. The semi-transmissive portion of such a fine pattern type is selected such that a fine pattern for maintaining a halftone effect between the light shielding portion and the light transmitting portion is of a line and space type or a dot (mesh) type, or another pattern is adopted. . Moreover, in the case of the line and space type, what is the line width, the ratio of the light transmission to the portion of the light-shielding, the overall transmittance «how is the juice, etc., the semi-transparent portion of the fine pattern type All must consider designing. X, even in the manufacture of the reticle, it is required to have a very narrow production technique such as the "value of the rule, the deviation of the line width in the reticle, etc." The semi-transmissive semi-transmissive film can reduce the exposure half-tone exposure of the semi-transmissive portion by using such a semi-transparent film. When using the semi-transparent film, the design needs to study the transmittance of the carcass. , Water Strike Shigong ~ (Xincai) cut factory needs to choose the heart of semi-transparent film = wide to produce a mask. Therefore, the mask (4), for example, the film thickness control U, the management is relatively easy And === the semi-transmissive portion of the tunable mask forms the channel portion of the m substrate i = if it is a semi-transmissive film, it can be patterned by light micro- _ _ _ _ _ _ _ The shape can also be carried out. The shape of the complex is in the Japanese special open 鸠-7 view bulletin (the patent document ^ reveals that there is a year
151350.doc S 201131283 透光膜形成如此之半透光部之半調式光罩之製造方法。其 製造方法係首先對於透明基板上包含半透光膜與遮光膜之 空白光罩塗布電子束阻劑，並照射電子束。此時，藉由控 制電子束之電荷量，而形成上述阻劑膜之一部分藉由顯影 但仍殘存特定之膜厚之描輕域，與上述阻酸藉由顯^ 被完全除去之描繪區域。進而，藉由顯影進行圖案化，以 使上述阻劑膜成為2調式之膜厚。分別使用具有該2調式之 膜厚之阻劑圖案，與藉由灰化（Ashing)使其減少膜量之阻 劑圖案，將上述遮光膜與半透光膜分別進行圖案化，藉此 製造半調式光罩。 胃 【發明内容】 亦已知有如下之方法，例如使用於透明基板上形成有半 透光膜與遮光膜之光罩基底，至少重複2次利用光微影步 驟之圖案化，使遮光膜與半透光膜分別圖案化，藉此製造 多調式（3調式）光罩。相對於此，根據專利文⑴所揭示之 半調式光罩之製造方法’其優點為由於描繪步驟進行^欠 即可’故無重複2次進行利用光微影步驟之圖案化時之2次 描繪步驟之對準不—致 千+ 5夂的問4，且用於形成阻劑圖案之顯 影步驟亦僅1次即可。 然而’專利文獻1所揭示之丰 ..α οβ ^ <牛調式先罩之製造方法係對 單層之阻劑層，在面内辦、'志曾工击 一 内θ减電子束之電荷量即曝光能量， 錯此使顯影時阻劑肢％ a 吁丨y膜冷解於顯影液之量產生變化，從而控 制阻劑膜之殘膜厚 塑，t4 彳一由於亚非僅受到曝光能量之影 響’亦會破阻劑膜 膜之顯#特性影響，故難以精密地控制阻 151350.doc 201131283 劑層高低差形成部分之阻劍膜之膜厚。又，難以將阻劑膜 較薄之部分（高低差低之部分）與阻劑膜較厚之部分（高低差 高之部分）之高度，分別正確地加工成各自期望之高度， 從而有該等之問題亦會對最終形成之光罩之圖案之線寬精 度產生影響之異常情形。 x 本發明之目的在於鑑於以上說明之先前之問題點，提供 一種可高精度地形成用於製造多調式光罩等之在面内阻劑 膜殘膜值不同之阻劑層高低差結構，並藉此可形成高精i 之光罩圖案之多調式光罩之製造方法、及多調式光罩用基 底、與電子裝置之製造方法。 為達成上述目的，本發明可呈現以下列舉之各種之雖 樣。 〜 (態樣1) 、一種多調式光罩之製造方法，其特徵為該多調式光罩係 ;透月基板上具有包含遮光部、透光部及使曝光光透射率 降低特疋里之半透光部之光罩圖案者’該方法包含以下步 驟.準備於透明基板上積層有半透光膜、遮光膜、及包含 刀別具有不同分光感度特性之第1阻劑層與第2阻劑層之阻 β丨膜之光罩基底，使用具有特定分光特性之第丄曝光光對 述阻4膜也繪第1圖案，繼而使用具有與上述第】曝光光 ▲同:光特之第2曝光光描綠第2圖案後，顯影上述阻劑 膜’藉此形成在面内阻劑殘膜值不同之第1阻劑圖案；將 v第1阻驾j圖案作為遮罩’钱刻上述遮光膜及半透光 膜；藉由使上述第m劑圖案減少特定膜量，而形成第2阻 151350.doc 201131283 劑圖案；及將上述第2阻劑圖案作為遮罩，至少蝕刻上述 遮光膜。 (態樣2) 如態樣〗記载之多調式光罩之製造方法，其中上述第】阻 劑層與第2阻劑層均使用正型阻劑，藉由使用上述第丨曝光 光之描繪，曝光對應於上述光罩圖案之透光部與半透光部 之區域，並藉由冑用上述第2曝光光之描，會，曝光對應於 上述光罩圖案之透光部之區域。 (態樣3) 如態樣1或2記載之多調式光罩之製造方法，其中上述第 1阻劑圖案具有高低差結構，該高低差結構係至少形成有 與上述阻劑膜之阻劑層數相同之數量之高低差。 (態樣4) 一種多調式光罩用基底，其特徵為其係用於製造在透明 基板上具有包含遮光部、透光部及使曝光光透射率降低特 定量之半透光部之光罩圖案之多調式光罩者，且於透明基 板上依序積層半透光膜、遮光膜及阻劑膜，且上述阻劑膜 依序積層有具有相互不同分光感度特性之第2阻劑層與第i 阻劑層，使用具有特定分光特性之第1曝光光對上述阻劑 膜描繪第1圖案，繼而使用具有與上述第丨曝光光不同分光 特f生之第2曝光光描繪第2圖案後，令上述阻劑膜顯影，藉 此形成在面内阻劑殘膜值不同之阻劑圖案時，以描繪及顯 τν後之阻4>丨殘膜率比較感度之情形，上述第1阻劑層對上 述第2曝光光之感度低於對上述第丨曝光光之感度，且上述 151350.doc 201131283 第2阻劑層對上述第丨曝光光之感度低於對上述第2曝光光 之感度。 (態樣5) 如態樣4S己載之多調式光罩用基底，其中獲得上述第1阻 劑層之分光感度最大值之波長，與獲得上述第2阻劑層之 分光感度最大值之波長的差在5〇〜7〇〇 ηιη之範圍内。 (態樣6) 如態樣4或5記載之多調式光罩用基底，其中上述第1阻 劑層在上述第1曝光光照射後，對上述第2曝光光之透射率 在60%以上，小於1〇〇%之範圍内。 (態樣7) 如態樣4至6中任一項記载之多調式光罩用基底，其中上 述第1阻劑層含有g線（波長436 nm)用正型阻劑，上述第2 阻劑層含有i線（波長3 6 5 nm)用正型阻劑。 (態樣8 ) 如態樣4至7中任一項記載之多調式光罩用基底，其中上 述第1阻劑層與上述第2阻劑層之膜厚分別為1〇 以下。 (態樣9) 一種電子裝置之製造方法，其特徵為：準備於基板上積 層構成電子裝置之複數個薄膜層，並於其上積層有包含分 別具有不同分光感度特性之複數個阻劑層之阻劑膜的被加 工體，並依序使用分別具有不同分光特性之複數個曝光光 對上述阻劑膜分別描繪特定之圖案後，顯影上述阻劑膜， 藉此形成在面内阻劑殘膜值不同之第1阻劑圖案，並將上151350.doc S 201131283 A method of manufacturing a half-tone mask in which a light-transmissive film forms such a semi-transmissive portion. The manufacturing method is to first apply an electron beam resist to a blank mask including a semi-transparent film and a light-shielding film on a transparent substrate, and irradiate an electron beam. At this time, by controlling the amount of charge of the electron beam, a portion of the resist film which is developed by development but still has a specific film thickness remains, and the above-mentioned acid-blocking region is completely removed by the visible region. Further, patterning is performed by development so that the resist film has a film thickness of a two-modulation type. The light-shielding film and the semi-transmissive film are respectively patterned by using a resist pattern having a film thickness of the two-modulation type and a resist pattern having a film amount reduced by ashing, thereby producing a half Adjustable mask. Stomach [Summary of the Invention] The following methods are also known, for example, a reticle substrate having a semi-transparent film and a light-shielding film formed on a transparent substrate, and patterning by a photolithography step is repeated at least twice, so that the light-shielding film is The semi-transmissive films are separately patterned, thereby producing a multi-tone (3-mode) photomask. On the other hand, according to the method for manufacturing a half-tone mask disclosed in Patent (1), the advantage is that the drawing step is performed, so that the second drawing is performed without patterning twice using the photolithography step. The alignment of the steps is not - a thousand + 5 夂 of 4, and the development step for forming the resist pattern is also only one time. However, the method disclosed in Patent Document 1 is: α οβ ^ < The method of manufacturing the cow-shaped hood is a resist layer of a single layer, and the charge of the electron beam in the inside The amount is the exposure energy, which causes the resisting agent to develop a change in the amount of the developing solution, thereby controlling the residual film thickness of the resist film, t4 由于 because the sub-Asian only receives exposure energy The influence of 'is also affected by the characteristic characteristics of the film of the anti-blocking agent film, so it is difficult to precisely control the film thickness of the blocker film formed by the height difference of the agent layer 151350.doc 201131283. Further, it is difficult to accurately process the portion where the resist film is thin (the portion where the height difference is low) and the portion where the resist film is thick (the portion where the height difference is high) to the respective desired heights. The problem is also an anomaly that affects the line width accuracy of the resulting reticle pattern. x The object of the present invention is to provide a high-low-difference structure of a resist layer having different residual film values of an in-plane resist film for manufacturing a multi-tone mask or the like with high precision in view of the above problems explained above. Thereby, a method of manufacturing a multi-tone mask of a high-precision mask pattern, a substrate for a multi-tone mask, and a method of manufacturing an electronic device can be formed. In order to achieve the above object, the present invention can be variously enumerated below. ~ (Stage 1), a method for manufacturing a multi-mode mask, characterized in that the multi-mode mask is provided; the moon-permeable substrate has a light-shielding portion, a light-transmitting portion, and a half of the light-transmitting portion The reticle pattern of the light transmitting portion includes the following steps: preparing a semi-transparent film, a light shielding film, and a first resist layer and a second resist containing different spectroscopic sensitivity characteristics on the transparent substrate The reticle substrate of the layer resisting the 丨 film, the first pattern is also formed by using the 丄 exposure light having the specific spectral characteristics, and then the second pattern is the same as the above-mentioned exposure light ▲: the second exposure After the green second pattern is developed, the resist film is developed to form a first resist pattern having different residual film values of the in-plane resist; and the v first resist j pattern is used as a mask. And a semi-transmissive film; forming a second resist 151350.doc 201131283 pattern by reducing the specific amount of the first agent pattern; and etching the light-shielding film at least by using the second resist pattern as a mask. (Surface 2) The method for manufacturing a multi-mode mask according to the aspect of the invention, wherein the first resist layer and the second resist layer each use a positive resist, by using the above-mentioned third exposure light And exposing the region corresponding to the light transmitting portion and the semi-light transmitting portion of the mask pattern, and exposing the region corresponding to the light transmitting portion of the mask pattern by using the second exposure light. (Aspect 3) The method for producing a multi-mode mask according to the aspect 1 or 2, wherein the first resist pattern has a height difference structure, and the height difference structure is formed with at least a resist layer with the resist film The number of the same number of height difference. (Aspect 4) A substrate for a multi-modulation reticle, which is characterized in that it is used for manufacturing a reticle having a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion for reducing a transmittance light transmittance by a specific amount on a transparent substrate In the multi-mode mask of the pattern, a semi-transparent film, a light-shielding film and a resist film are sequentially laminated on the transparent substrate, and the resist film is sequentially laminated with a second resist layer having different spectral sensitivity characteristics. The i-th resist layer draws a first pattern on the resist film using a first exposure light having a specific spectral characteristic, and then draws a second pattern by using a second exposure light having a different spectroscopic difference from the second exposure light. And developing the above-mentioned resist film to form a resist pattern having different residual film values of the in-plane resist, and to describe the resistivity after the τν and the residual film rate, the first resist The sensitivity of the layer to the second exposure light is lower than the sensitivity to the second exposure light, and the sensitivity of the second resist layer to the second exposure light is lower than the sensitivity to the second exposure light. (Surface 5) A substrate for a multi-modulation photomask according to the aspect 4S, wherein a wavelength at which the spectral sensitivity maximum of the first resist layer is obtained, and a wavelength at which the maximum sensitivity of the second resist layer is obtained is obtained. The difference is in the range of 5〇~7〇〇ηιη. (Aspect 6) The substrate for a multi-tone mask according to the aspect 4 or 5, wherein the first resist layer has a transmittance of 60% or more to the second exposure light after the first exposure light is irradiated. Less than 1〇〇%. The substrate for a multi-mode mask according to any one of the aspects 4 to 6, wherein the first resist layer contains a g-type (wavelength 436 nm) positive resist, and the second resistor The agent layer contains an i-line (wavelength 3 6 5 nm) with a positive resist. The substrate for a multi-tone mask according to any one of the aspects 4 to 7, wherein the thickness of the first resist layer and the second resist layer is 1 Å or less. (Aspect 9) A method for manufacturing an electronic device, characterized in that a plurality of thin film layers constituting an electronic device are laminated on a substrate, and a plurality of resist layers each having different spectral sensitivity characteristics are laminated thereon. Forming a body of the resist film, and sequentially drawing a specific pattern on the resist film by using a plurality of exposure lights each having different spectral characteristics, and then developing the resist film to form a residual film in the in-plane resist a different value of the first resist pattern, and will be
S 151350.doc -9- 201131283 述第1阻劑圖案作為遮罩，蝕刻上述複數個薄臈層中至少 一部分之層，繼而藉由使上述第丨阻劑圖案減少特定膜量 而形成第2阻劑圖案，其後，將上述第2阻劑圖案作為遮 罩，蝕刻上述複數個薄膜層中至少一部分之層，進而使上 述第2阻劑圖案減少特定膜量，將該經減少膜量之阻劑圖 案作為遮罩’重複必要次數之㈣上述複數個薄膜層中至 少一部分之層之步驟，藉此將上述複數個薄膜層圖案化。 根據本發明，依序使用分別具有不同分光特性之例如2 個曝光光，冑包含分別具有$同分光感度特性之例如2層 阻劑層之阻劑膜’分別描繪特定之圖案後進行顯影，藉此 形成在面内阻劑殘膜值不同之阻劑圖案。藉此可高精度地 形成用於製造多調式光罩等之在面内阻劑殘膜值不同之阻 Μ層冋低K構’藉此能夠獲得可形成高精度之光罩圖案 之多調式光罩。 又’根據本發明’可提供一種適宜用於製造如此之多調 式光罩之多調式光罩用基底。 再者根據本發明，可提供一種與多調式光罩同樣能夠 進行向精度之圖案加工之電子裝置之製造方法。 【實施方式】 乂下基於Η施形態詳細地說明本發明。 圖1係用於依步驟說明本發明之實施形態之多調式光罩 之製以方法的概略剖面圖。此處，顯示3調式之光罩之製 造例。 所獲付之夕調式光罩20(參照圖1(h))係用於製造例如液 151350.doc 201131283 晶顯示裝置（LCD)之薄膜電晶體（TFT)或彩色濾光片，或電 漿顯示器（PDP)等》 上述多調式光罩20之構成具體而言包含：使用該光軍2〇 時遮蔽曝光光（透射率大致為〇%)之遮光部21 ;透射露出之 透明基板1之表面之曝光光之透光部22;及將透光部22之 曝光光透射率設為100%時，使透射率降低至2〇〜8〇%，較 佳為40〜60。/。左右之半透光部23。半透光部23之構成為於 玻璃基板等之透明基板1上，形成光半透射性半透光膜2。 又’遮光部21係於透明基板丨上由上述半透光膜2與遮光性 之遮光膜3之積層膜構成。再者，圖1所示之遮光部Η、透 光部22及半透光部23之圖案形狀終究為代表性之一例，當 然並非將本發明限定於此之宗旨。 於圖1(a)顯示本發明之實施形態之多調式光罩之製造方 法較佳所使用之多調式光罩用基底（以下稱為「光罩基 底」）。 圖1(a)所示之光罩基底1〇係於透明基板1上依序積層有半 透光膜2、遮光膜3及阻劑膜4，該阻劑膜4包含具有相互不 同分光感度特性之上層之第i阻劑層4a，與下層之第2阻劑 層4b的積層構成。 作為上述透明基板1使用例如玻璃基板，尤其較佳的是 石英玻璃基板。 作為上述半透光膜2之材質，舉例有例如鉻化合物、矽 化翻化合物、Si、w、A1#。其中，鉻化合物為氧化絡 (Cr〇x)、氮化鉻（CrNx)、氮氧化鉻（CrOxN)、氟化鉻 151350.doc 201131283 (CrFx)，或於該等含有碳或氫者。又，作為矽化鉬化合物 除MoSix以外，包含!^〇^之氮化物、氧化物、氮氧化物、 碳化物等。又，例如形成曝光光透射率不同之複數個半透 光部之情形肖，亦可將半透光膜設為#質不同之複數個積 層膜構成。上述半透光部23之透射率係根據半透光膜2之 膜材質與膜厚之選定而設定。 又，作為上述遮光膜3之材質，舉例有例如Cr、Si、 W、A1等。遮光膜3可採用單層亦可採用積層結構。例如 可採用將以絡等為主成份之遮光層與以氧化絡等為主成份 之抗反射層之積層結構。再者，上述遮光部21藉由上述半 透光膜2與遮光膜3之積層，光學濃度較佳為3 〇以上。 又，構成上述阻劑膜4之第1阻劑層4a與第2阻劑層仆具 有相互不同分光感度特性，藉由使用分別具有不同分光特 性之曝光光進行描繪，可於各阻劑層分別形成期望之圖 案。 各阻劑層分光感度特性之不同可根據各阻劑層之分光感 度曲線等，將提供最大感度之光之波長值、或具有最大感 度之強度、感度之波長域之寬度等進行比較從而掌握。本 實施形態係尤其利用阻劑層感度之波長依存性，積層分光 感度特性不同之複數個阻劑層，並使用波長不同之複數個 曝光光’分別使各阻劑層《丨，從而欲控制各個阻劑殘膜 值者。因此，在本實施形態中，較佳為比較表示阻劑層感 度之波長依存性之參數之一的獲得分光感度最大值之光之 波長值，藉此判斷阻劑層分光感度特性之不同。 15J350.doc -12· 201131283 例如在本實施形態中，較佳的是獲得上述第i阻劑層4a 之分光感度最大值之波長，與獲得上述第2阻劑層4b之分 光感度最大值之波長的差在5〇〜700 nm之範圍内。作為利 用通常之光學透鏡等而可運用之光，係存在於包含在大氣 中無法運用之真空紫外線之短波長之光與以通常之光學透 鏡無法運用之1000 nm以上之長波長的光之間的3〇〇〜1〇〇〇 nm之波長範圍。因此，在該範圍巾最大之波長差為· nm。根據本發明者之研究，在該範圍内，比較阻劑層之分 光感度時，本實施形態中對應於最大感度之波長之差較佳 為有50 nm以上。再者，對應於各阻劑層之最大感度之波 長之差較佳為1〇〇 nm以上。 在本實施形態中，例如上層之第1阻劑層私可含有g線 (波長436 nm)用正型阻劑，而下層之第2阻劑層朴可含有i 線（波長365 nm)用正型阻劑。 再者，構成上述阻劑膜4之各阻劑層亦可使用正型阻 齊J負S阻劑中任意一者。根據情形之不同，可例如將第 1阻劑層設為正型，將第2阻劑層設為負型進行實施。或亦 可將第m劑層設為負型，將第2阻劑層設為正型。在本實 施开八態中’尤其較佳的是使用有利於微細圖案形成之正型 阻劑。 作為阻劑之塗布方法，為提高阻劑塗布之膜厚精度，可 選擇能夠實現必要精度之塗布方法4彳如，可適用旋塗機 (P Coater·) CAP塗布機（CAp C()ater)、模嘴塗布機⑼e ㈣、噴霧塗布機（Spray 等。各阻劑塗布後，可 151350.doc -13· 201131283 進行利用加熱之供烤或真空乾燥等因應需要之後處理。 由於阻劑膜4至少包含2層阻劑層之積層，故必須防止阻 劑塗布時，先塗布之阻劑層因後塗布之阻劑液所含有之溶 媒之影響而導㈣落，或與後塗布之阻劑混合之情形。例 如，較佳的是選擇使用各自不會混合之溶媒之阻劑，或每 進行-次阻劑塗布就進行適#之供烤（㈣）等。又，不會 對曝光或顯影1刻等之製程產生障礙，可形成期望之阻 劑層高低差，且亦可將滿^不阻礙阻劑層高低差之膜減量 之條件之中間層設置於阻劑層間，藉此防止阻劑彼此之混 合〇 又，各阻劑層之厚度考慮透射阻劑層時之曝光光之衰減 造成之影響或圖案形成精度較佳為最大設為10叫左 右各阻劑層之膜厚大於10 μηι之情形，因難以進行高精 度之塗布、冑以進行顯影引起之殘膜量之控帝J、因曝光光 透射阻劑層時之曝光光之衰減，導致阻劑層中於相對於阻 刎膜面垂直之方向上產生感光度之梯度，阻劑層中根據深 度的不同，阻劑層之感光程度不同之現象變得顯著等該等 之諸夕原因，導致難以形成高精度之阻劑圖案。另一方 面，為維持作為阻劑層之功能，最小膜厚必須設為03 μιη 左右。 其-入’根據圖1 (b)至（h)所示之步驟，說明使用上述光罩 基底10製造多調式光罩之方法。 首先，使用具有特定分光特性之第1曝光光5,對上述光 罩基底10之阻劑膜4描繪第1圖案（參照圖i(b))，繼而使用 151350.doc 201131283 具有與第1曝光光5不同分光特性之第2曝光光6描繪第2圖 案（參照圖1(c))。在圖1所示之本實施形態中，第1阻劑層 4a與第2阻劑層4b中任意一者均使用正型阻劑，藉由使用 第1曝光光5之圖案描繪，對上層之第}阻劑層如曝光對應 於隶終形成之光罩圖案之透光部與半透光部之區域，繼而 藉由使用第2曝光光6之圖案描繪，對下層之第2阻劑層朴 曝光對應於光罩圖案之透光部之區域。 在藉由描繪後之顯影所形成之阻劑圖案中，藉由上述第 2阻劑層4b形成包含阻劑層高低差之臈厚較薄之區域之部 分’並藉由上述第1阻劑層4a與第2阻劑層4b之積層，形成 包含阻劑層尚低差之膜厚較厚之區域之部分。將曝光前之 阻劑層膜厚設為最大之膜厚，使曝光量改變，藉此使阻劑 之聚合度或對溶媒之溶解度等之特性產生變化，從而可控 制顯影後之第1阻劑層4a與第2阻劑層4b之各膜厚（阻劑層 高低差）。可考慮第1阻劑層4a及第2阻劑層4b之各分光感 度分佈或分光透射率、第1曝光光5及第2曝光光6之分光光 譜特性或單色性等’從而選擇容易使用之阻劑層與曝光光 之組合。 在本實施形態中，為使上層之第1阻劑層4a感光，使用 第1曝光光5，且為使下層之第2阻劑層4b感光而使用第2曝 光光6。因此’以描繪及顯影後之阻劑殘膜率比較感度之 情形’較佳的是第1阻劑層4a對第2曝光光6之感度低於對 第1曝光光5之感度，且第2阻劑層4b對第1曝光光5之感度 低於對第2曝光光6之感度。 I5I350.doc 201131283 處阻d殘膜率是指將曝光前之阻劑層之膜厚設為 以百分率表示曝光.顯影後殘存之阻劑層之厚度 者。例如若對膜厚咖⑽之阻劑層進行曝光、顯影，殘 存之阻劑膜膜厚為65Gnm，則阻劑殘膜率為65 。 W之感度較低疋指例如對第i阻劑層&與第2阻劑層朴 進行相同條件之曝光與顯影時，殘膜率之數值大者之感度 較低m阻劑層之殘膜率為80%，第2阻劑層之殘膜率 為70%，則可說第m劑層對該曝光光之感度較低。 此處，第1阻劑層與第2阻劑層中任意一者均為正型阻劑 之清形，只要使用第2曝光光6曝光後顯影之第丨阻劑層鈍 之殘膜率為70%以上，而第2阻劑層之殘膜率實質上為 〇%，且使用第i曝光光5曝光後顯影之第2阻劑層仆之殘膜 率為70%以上，而第！阻劑層之殘膜率實質上為，則可 良好地實施。若該殘膜率為5〇%以下，則第i阻劑層與第2 阻劑層之尚低差之差縮小。再者，為提高阻劑膜之圖案形 成精度，第1阻劑層與第2阻劑層中任意一者均為正型阻劑 之情形，較佳的是使用第2曝光光6曝光後顯影之第丨阻劑 層4a之殘膜率為90%以上，而第2阻劑層之殘膜率實質上為 〇% ’且使用第1曝光光5曝光後顯影之第2阻劑層4b之殘膜 率為90%以上，而第i阻劑層之殘臈率實質上為〇%。如 此’因為可藉由減少阻劑圖案之形成所必須之部分之膜、咸 少量（使殘膜率值接近100〇/〇) ’防止減少膜量引起之阻劑圖 案之變形，從而可形成更高精度之圖案。 在本實施形態中，可選擇適於欲被感光之各阻劑層之曝 151350.doc •16- 201131283 光光，即對欲被感光之阻劑層感度較高之曝光光，曝光各 阻劑層。又，在本實施形態中，該曝光光可使用對其他阻 劑層感度較低（吸收亦少）者。因此，曝光光因其他阻劑層 之影響而衰減之量減少，從而可有效率地使用曝光光。因 此，在本實施形態中，曝光光亦不會因積層之阻劑層之原 因而大幅減少，其結果，由於無需使曝光量大幅增加，故 有積層阻劑層時，幾乎不會產生為使曝光量增加而增加曝 光光強度，或增加曝光時間等之必要性之效果。 在本實施形態中，較佳的是最初使用第1曝光光5，曝光 上層之第1阻劑層4a，繼而使用第2曝光光6，實施下層之 第2阻劑層4b之曝光。其理由為阻劑層含有因照射曝光光 而產生光反應，並有助於阻劑層之圖案形成之材料。進行 s亥等之光反應之材料大多吸收曝光光等之特定光，完成反 應後變化成具有其他特性之材料，因此，光反應前之材料 減少，其結果，有對含有特定波長之光產生透射率等光學 特性之變化之情形。因此，先使用第2曝光光6曝光下層之 第2阻劑層4b之情形，由於該第2曝光光6穿過上層之第^且 劑層牝，故此時存在藉由第2曝光光ό曝光之第1阻劑層4a 之透射率等光學特性產生變化之情形，其後，有對使用第 1曝光光5曝光上層之第1阻劑層時之圖案精度等產生異 常的情形°相對於此，即使最初使用第1曝光光5曝光上層 之第1阻劑層4a時，第1阻劑層4a之光學特性產生變化，但 由於在第1阻劑層乜上之圖案形成已完成’故只要不阻礙 第曝光光6對下一廣之第2阻劑層朴之透射，均不會產生 151350.doc -17- 201131283 異常。 但’即使先曝光下層之第2阻劑層4b，若為上層之第1阻 劑層4a中產生之光學特性之變化在繼續對該第1阻劑層乜 之曝光時不會對圖案精度等產生影響之程度者，則不在此 限。 再者，在本實施形態中，由於係藉由使用第丨曝光光5之 圖案描繪，對上層之第1阻劑層牦曝光對應於最終形成之 光罩圖案之透光部與半透光部之區域，繼而藉由使用第2 曝光光6之圖案描繪，對下層之第2阻劑層仆曝光對應於光 罩圖案之透光部之區域，故上層之第！阻劑層4a在照射第】 曝光光5後，亦藉由第2曝光光6曝光其透光部區域。因 此，為使第2曝光光6對第2阻劑層4b之光反應有效率地使 用，第1阻劑層4a在照射第丨曝光光5後，對第2曝光光6之 透射率較佳在6〇%以上，小於100%之範圍内，尤其較佳的 是80%以上，小於100〇/〇。 再者，所謂光之透射率係根據透射某種物質時之透射前 與透射後之光強度之比例而求得者。例如，將入射至具有 某膜厚之阻劑層前之光強度設為1〇〇%之情形若穿過該 阻劑層後之光強度衰減至65% ’則該阻劑層之光之透射率 為 65% 〇 又，使上述各曝光光之曝光量在面内產生變化，藉此亦 可使藉由各曝光光感光之阻劑層之阻劑殘膜值在面内不 同。若使各曝光光之曝光量在面内產生變化，則除阻劑層 之層數引^之高低差以外，料阻劑層亦可成為顯影後: 151350.doc 201131283 面内阻劑膜膜厚不同之結構。因此，若使用2層之阻劑 層’以使令其成為各阻劑層中均有2種厚度之構造的方 式調•曝光光之曝光1E與照射區域，則可形成整體包含 4種高度不同之膜厚之阻劑層高低差結構。 又，將阻劑層不僅設為2層、設為3層以上之複數層之情 形，亦可藉由各阻劑層形成高低差，從而可形成至少與阻 d層數相同之數量之高低差。再者，對該複數層阻劑層， 亦在各阻劑層之面内使曝光量變化之情形，除藉由各阻劑 層形成之高低差結構以外，可進一步增加高低差結構。 然而，作為曝光光，亦可使用對水銀燈或氙氣燈等之具 有寬廣（broad)波長區域之光源，使用吸收或反射透射光之 一部分而改變分光特性之彩色濾光片或干涉濾光片等從 而改麦分光特性之2種以上之光。又，使用可使用單色光 之雷射或LED光等之情形，較佳的是可去掉於第丨曝光光 與第2曝光光之分光感度分佈重疊部分，從而可有效地選 擇曝光第1阻劑層4a與第2阻劑層4b。例如，上層之第i阻 劑層4a為g線（波長436 nm)用正型阻劑，下層之第2阻劑層 仆為i線（波長365 nm)用正型阻劑之情形，作為對第！阻劑 層4a之曝光光，可使用心離子雷射（波長413 nm)，而作為 對第2阻劑層4b之曝光光，可使用YAG雷射之SH(}(波長355 nm)等。 亦可將使用第1曝光光之圖案描繪與使用第2曝光光之圖 案描繪分成2次進行，但使用雷射光等進行描繪時，亦可 面同％•掃描對應於第1曝光光與第2曝光光之2色雷射 151350.doc •19- 201131283 光，—面曝光描繪大致相同之部位。後者有助於縮短描繪 時間，或提高以2色雷射描繪之各描繪圖案之重合精度， 而為適宜之方法。該情形，可以2色雷射光各自交又不 產生干涉等之不良影響的方式考慮雷射光之配置等。 繼而，進行描繪後之上述阻劑膜4之顯影，藉此形成具 有利用分別形成於上述第丨阻劑層4a與第2阻劑層朴之描繪 圖案所致之高低差結構之第"且劑圖案7(參照圖聊。 、描繚後之阻劑膜4基本上係藉由適合於各阻劑層之顯影 液進行顯影。第m劑層4a與第2阻㈣倾用利用曝光部 與未曝光部之對驗之溶解度差進行圖案形成之正型阻劑的 情形’可一起（同時）顯影第m劑層4a與第2阻劑層朴。因 此’使得顯影步驟負擔較少齡〆去 ^ 把役v較佳。當然各阻劑顯影液對其 他之阻劑不會造成特別里當 ,、 h、*之情形，亦可依序使用不同之 顯景;^液（適合於各阻割層夕甚 劑層之㈣液從上層之阻劑層依序 進灯顯影。再者，阻劑膜4 接劑膜4使用負型阻劑之情形，亦可同 樣地在上述條件範圍内撰煜 m旦/ ®内選擇顯影液與顯影方法，藉此適宜 地進仃顯影。 如此’根據本實施形態，為 為曝先分光感度特性分別不同 之例如包含2層阻劑層之阻 M m ^ ^ , J膜之各個阻劑層，依序或同 给、顯&从 別不同之複數個曝光光進行描 繪、顯影，藉此於各阻劑声八 ^ # ^ , . B刀別形成期望之圖案，從而可 间精度地形成在面内阻 構。 殘膜值不同之阻劑層高低差結 上述第1阻劑圖案7具有至 开^成有與上述阻劑膜4之阻 151350.doc 201131283 劑層數相同之數量之高低差的高低差結構。 ^而’將上述第1阻劑圖案7作為遮罩，藉由濕式姓刻除 去無阻劑圖案之例如透光部形成區域之遮光膜3及半透光 膜2(參照圖1(e))。該情形 』如作為鉻系遮光臈之蝕刻 使用例如石肖酸二敍鈽，而作為石夕化翻系之半透光膜 =液可分別使用例如於氟酸、氟料、氣化氣錄等 添加有過氧化氫、硫酸、硝酸等之氧化劑者等。 "/繼而，藉由灰化等使上述第I阻劑圖案7減少特定膜量， 從而形成除去了上層之第1阻劑層化部分與例如半透光部 形成區域上之薄阻劑層（第2阻劑層4b)部分的第2阻劑 8(參照圖1(f))。 〃 且’繼而將該第2阻劑圖案8作為遮罩，藉由濕式餘刻除 去例如半透光部區域上之露出之遮光膜3,使下層之半透 光膜2路出（參照圖1 (g))。 再者’根據遮光膜與半透域之各膜材料之組合，兩者 之钱刻選擇性較低之情形，預先（在光罩基底製造階段）於 遮光膜與半透光膜之間等形成有具有蝕刻擋止層功能之 膜，例如藉由蝕刻僅除去上層之遮光膜時，亦可保護下層 之半透光膜。 除去最後殘存之第2阻劑圖案8，藉此完成圖1(h)所示之 於透明基板1上具備含有包含半透光膜2與遮光膜3之積層 膜之遮光部21、露出透明基板丨之透光部22、及包含半透 光膜2之半透光部23之光罩圖案的多調式（3調式）光罩2〇。 根據本實施形態，如上所述，由於可高精度地形成具有 I5I350.doc 5 •21· 201131283 在面内阻劑殘膜值不同之阻劑層高低差結構之阻劑圖案， 故使用該阻劑圖案能夠製造形成有高精度圖案、尤其形成 有高精度控制線寬之圖案之多調式光罩。 在上述之貫施形態中’雖將阻劑膜設為2層結構，但可 將阻劑層進一步設為複數層，實施各曝光光之曝光量與照 射區域之調整等’使各阻劑層形成高低差’從而形成具有 夕階之阻劑層高低差結構之阻劑圖案。使用該阻劑圖案藉 由組合複數次蝕刻與複數次之阻劑圖案之膜減量處理，亦 可製作具有透射率不同之複數個半透光部、遮光部及透光 部之例如4調以上之多調式光罩。 又，阻劑層高低差結構之形成，可於以構成各高低差的 方式積層之阻劑層各層採用具有分別不同分光感度特性之 阻劑，以波長分別不同之曝光光個別曝光各層。此時，例 如正型阻劑之情形，若在顯影後不會於曝光部（感光部）產 生阻劑層之殘膜，且不會於未感光部發生阻劑層膜量減少 之條件下’對各na劑層進行力σ =，則可將保持有初始膜厚 (殘膜率大致100%)之各阻劑層作為阻劑層之高低差分別構 成。由於如此以顯影後作為阻劑層殘存之部分不發生膜量 減少的方式形成之阻劑圖案，阻劑層膜量減少時產生之阻 d圖案之嫒形減少，形成精度提高，最終形成於光罩之光 罩圖案之精度提高，故而有效。 又，本發明亦可提供一種電子裝置之製造方法，其與上 述之多調式光罩同樣地，形成具有阻劑層高低差結構之阻 劑圖案，並使用該阻劑圖案製造電子裝置。即，該電子裝 151350.doc •22- 201131283 置之襄&方法之特徵為··準備於基板上積層有構成 電子裝 置之複數個薄膜屬，且於其上積層有包含分別具有不同分 光感度特性之複數個阻劑層之阻劑膜的被加工體，並依序 使用分別具有不同分光特性之複數個曝光光對上述阻劑膜 分別描繪特定之圖案後’顯影上述阻劑膜，藉此形成在面 内阻劑殘膜值不同之第1阻劑圖案，將上述第！阻劑圖案作 為遮罩，鞋刻上述複數倘薄膜層令至少一部分之層，繼 而，使上述第1阻劑圖案減少特定膜量，藉此形成第2阻劑 圖案’其後’將上述第2阻劑圖案作為遮罩，㈣上述複 數個薄膜層中至少一部分之層，並進_步使上述第2阻劑 圖案減少特定膜量，將該經減少膜量之阻劑圖案作為遮 罩’重複姓刻上述複數個薄膜層十至少一部分之層所需之 次數，藉此使上述複數個薄膜層圖案化。 圖2係用於說明電子裝置之製造方法之步驟順序之剖面 圖。此處’作為電子裝置之例說明丁打基板 ^玻璃基板30上形成閘極電極用金屬膜，並藉由光微影 製程形成閉極電極31。其後，積詹間極絕緣膜32、^半 導體膜33(例如a_Si)、第2半導體膜34(例如N+a.Si)、源極/ 沒極用金屬膜35’進而於其上積層包含分別具有不同分光 感度特性之第m劑層36a與第2阻劑層36b之阻劑膜 照圖 2(a)” 、、> 繼而，依序使用具有特定分光特性之第1曝光光、與具 有與第1曝光光不同分光特性之第2曝光光，對上述阻劑膜 36分別描緣特定之圖案後，顯影阻劑㈣，藉此形成在面 151350.doc -23- 201131283 内阻劑殘膜值不同之高低差結構之第1阻劑圖案37(參照圖 2(b))。藉此，形成覆蓋TFT通道部及源極/汲極形成區域， 與資料線形成區域’且通道部形成區域較源極/汲極形成 區域薄之第1阻劑圖案37。 繼而將上述第1阻劑圖案3 7作為遮罩，蝕刻無阻劑圖案 區域之源極/汲極用金屬膜35及第2、第1半導體膜34、33 (參照圖2(c))。繼而，藉由灰化使第1阻劑圖案37膜量減 少，藉此形成除去通道部形成區域之薄阻劑膜之第2阻劑 圖案38(參照圖2(d))。其後，將第2阻劑圖案38作為遮罩， 蝕刻源極/汲極用金屬膜35，形成源極/汲極35a、35b，繼 而蝕刻第2半導體膜34，除去最後殘存之第2阻劑圖案38 (參照圖 2(e)、（f))。 如此，可製造高度控制線寬之TFT基板。該情形，亦與 多調式光罩同樣地，將阻劑層進一步複層化，實施各曝光 光之曝光量與照射區域之調整等，使各阻劑層分別形成高 低差，藉此可形成具有多階之阻劑層高低差結構之阻劑圖 案。使用該阻劑圖案藉由組合複數次之蝕刻與複數次之阻 劑圖案之膜減量處理，亦可實現積層之薄膜（半導體膜' 金屬膜專）之南精度之加工。 以下’藉由具體之實施例說明本發明。 於石英基板上’成膜包含梦化錮之半透光膜（曝光光透 射率50%)，與包含以鉻為主成份之遮光層及以氧化絡為主 成份之抗反射層之積層之遮光膜。於其上將i線（波長 mn)用正型阻劑塗布成1〇〇〇 nm之膜厚，進行特定烘烤。進 151350.doc • 24 - 201131283 而於其上將^線（波長436 nm)用正型阻劑塗布成1000 nm之 膜厚，進竹特定之烘烤，從而形成包含2層分光感度特性 不同之阻劑層之阻劑膜。如此，製作光罩基底。 繼而使用该光罩基底，根據上述之圖1所示之步驟， 製作3調式光罩。 首先使用Kr離子雷射（波長413 nm)，對上述光罩基底 之阻劑膜描繪特定之圖案（例如曝光對應於最終形成之3調 式光罩之透光部與半透光部之區域）。此時，上層之§線用 阻劑層被曝光，下層之丨線用阻劑層由於對波長413 11〇1具 有感光區域故亦被曝光。但，由於本實施例中使用之丨線 用阻劑對波長413 nm之感度較低（顯影後之阻劑殘膜率為 70%以上）’故無特別阻礙。又，本實施例中使用之呂線用 阻劑因上述曝光，導致具有480 nm以下之吸收帶之感光基 產生反應。且，被曝光之區域之心線用阻劑對其後進行之 曝光光（波長355 nm)透射率從原本3〇%左右增加至8〇%左 右。 繼而，使用YAG雷射之THG(波長355 nm)，對上述阻劑 膜描繪特定之圖案（例如曝光對應於最後形成之3調式光罩 之透光部之區域此時，由於下層之丨線用阻劑層被曝 光，對應於曝光區域之上層之g線用阻劑層業已以最初之 波長413 nm之雷射被曝光，且對波長355 nm之曝光光透射 率增加至80%左右，故對下層之丨線用阻劑層之曝光可有效 率地進行。 繼而，使用鹼性顯影液，同時進行上述阻劑膜之顯影， 151350.doc -25· 201131283 藉此形成具有分別形成於上述g線用阻劑層與丨線用阻劑層 之圖案產生之高低差結構的第1阻劑圖案。且，將該第^且 劑圖案作為遮罩，藉由濕式蝕刻除去無阻劑圖案之例如透 光部形成區域之遮光膜及半透光膜。 繼而，藉由灰化使上述第1阻劑圖案膜量減少，從而形 成例如除去了半透光部形成區域之薄阻劑層之第2阻劑圖 案。且，將該第2阻劑圖案作為遮罩，藉由濕式蝕刻除去 例如半透光部區域之露出之遮光膜，使下層之半透光膜露 出。最後，除去殘存之第2阻劑圖案。 如此，可完成圖1(h)所示之透明基板上具備包含遮光 部、透光部、及半透光部之光罩圖案之3調式光罩。 如此，為曝光包含分光感度特性分別不同之例如2層阻 劑層之阻劑膜之各阻劑層，依序或同時利用分光特性θ(波 長）分別不同之2種曝光光進行描繪’從而於各阻劑層形成 圖案，藉此可高精度地形成具有在面内阻劑殘膜值不同之 阻劑層高低差結構之阻劑圖案。藉此，可製造高度控制圖 案線寬之多調式光罩’具有阻劑層高低差結構之阻劑 圖案不僅利用於多調式光罩，亦可利用於例如了打基板等 之电子裝置之製造。藉由組合使用該具有多階之高低差結 構之阻劑圖案之複數次蝕刻，與複數次之阻劑圖案之膜減 :處理，藉此可形成高度控制圖案線寬’且能夠抑制如先 别之至少重複2次圖案〖，製作多調式光罩之方法中對準 不一致之發生的微細圖案。 【圖式簡單說明】 151350.doc •26- 201131283 圖l(a)-(h)係用於依步驟說明本發明之多調式光罩之製 造方法之概略剖面圖。 圖2(a)-(f)係用於說明本發明之電子裝置之製造方法之概 略剖面圖。 【主要元件符號說明】 1 透明基板 2 半透光膜 3 遮光膜 4 阻劑膜 4a 第1阻劑層 4b 第2阻劑層 7 第1阻劑圖案 8 第2阻劑圖案 10 光罩基底 20 多調式光罩 21 遮光部 22 透光部 23 半透光部 30 玻璃基板 31 閘極電極 32 閘極絕緣膜 33 第1半導體膜 34 第2半導體膜 35 源極/汲極用金屬膜 151350.doc -27· 201131283 35a 源極/汲極 35b 源極/汲極 36 阻劑膜 36a 第1阻劑層 36b 第2阻劑層 37 第1阻劑圖案 38 第2阻劑圖案 151350.doc -28S 151350.doc -9- 201131283 The first resist pattern is used as a mask to etch at least a portion of the plurality of thin layers, and then the second resist is formed by reducing the specific resist amount by the specific resist pattern. Then, the second resist pattern is used as a mask to etch at least a part of the plurality of thin film layers, thereby reducing the specific resist amount by the second resist pattern, thereby reducing the amount of the reduced film The agent pattern is used as a mask to repeat the steps of (4) at least a portion of the plurality of film layers, thereby patterning the plurality of film layers. According to the present invention, for example, two exposure lights each having different spectral characteristics are used in sequence, and the resist film including, for example, two layers of resist layers having the same light sensitivity characteristic, respectively, is respectively patterned and developed. This forms a resist pattern having different residual film values in the in-plane resist. Thereby, a barrier layer having a different residual film value in the in-plane resist for manufacturing a multi-tone mask or the like can be formed with high precision, whereby a multi-tone light capable of forming a mask pattern with high precision can be obtained. cover. Further, according to the present invention, a substrate for a multi-tone mask suitable for use in the manufacture of such a multi-mode mask can be provided. Further, according to the present invention, it is possible to provide a method of manufacturing an electronic device capable of performing pattern processing with precision similarly to a multi-tone mask. [Embodiment] The present invention will be described in detail based on the present embodiment. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a method of manufacturing a multi-mode mask according to an embodiment of the present invention. Here, a manufacturing example of a 3-tone mask is shown. The tuned mask 20 (refer to FIG. 1(h)) is used to manufacture a thin film transistor (TFT) or a color filter, for example, a liquid 151350.doc 201131283 crystal display device (LCD), or a plasma display. (PDP), etc. The configuration of the multi-tone mask 20 specifically includes a light shielding portion 21 that shields exposure light (a transmittance of approximately 〇%) when the light beam is used, and transmits the surface of the exposed transparent substrate 1 When the light transmittance of the light transmitting portion 22 is 100%, and the light transmittance of the light transmitting portion 22 is 100%, the transmittance is lowered to 2 〇 to 8 〇%, preferably 40 to 60. /. The left and right half of the light transmitting portion 23. The semi-transmissive portion 23 is configured to form a light-transmissive semi-transmissive film 2 on a transparent substrate 1 such as a glass substrate. Further, the light-shielding portion 21 is formed of a laminated film of the semi-transmissive film 2 and the light-shielding light-shielding film 3 on the transparent substrate. Incidentally, the pattern shapes of the light-shielding portion Η, the light-transmitting portion 22, and the semi-transmissive portion 23 shown in Fig. 1 are generally representative, and the present invention is not limited thereto. Fig. 1(a) shows a multi-tone mask substrate (hereinafter referred to as "mask base") which is preferably used in the method of manufacturing a multi-mode mask according to an embodiment of the present invention. The reticle substrate 1 shown in FIG. 1(a) is sequentially laminated on the transparent substrate 1 with a semi-transmissive film 2, a light-shielding film 3 and a resist film 4, and the resist film 4 includes mutually different spectral sensitivity characteristics. The i-th resist layer 4a of the upper layer is laminated with the second resist layer 4b of the lower layer. As the transparent substrate 1, for example, a glass substrate is used, and a quartz glass substrate is particularly preferable. As the material of the semi-transmissive film 2, for example, a chromium compound, a bismuth compound, Si, w, and A1# are exemplified. Among them, the chromium compound is oxidized complex (Cr〇x), chromium nitride (CrNx), chromium oxynitride (CrOxN), chromium fluoride 151350.doc 201131283 (CrFx), or those containing carbon or hydrogen. Further, the molybdenum molybdenum compound contains, in addition to MoSix, a nitride, an oxide, an oxynitride, a carbide, or the like. Further, for example, in the case where a plurality of semi-transmissive portions having different exposure light transmittances are formed, the semi-transmissive film may be formed of a plurality of laminated films having different quality. The transmittance of the semi-transmissive portion 23 is set in accordance with the film material and film thickness of the semi-transmissive film 2. Further, examples of the material of the light shielding film 3 include Cr, Si, W, and A1. The light shielding film 3 may be a single layer or a laminated structure. For example, a laminated structure of a light-shielding layer mainly composed of a network or the like and an anti-reflection layer mainly composed of an oxide complex or the like can be used. Further, the light-shielding portion 21 is formed by laminating the semi-transmissive film 2 and the light-shielding film 3, and the optical density is preferably 3 Å or more. Further, the first resist layer 4a and the second resist layer constituting the resist film 4 have mutually different spectral sensitivity characteristics, and are drawn by using exposure light having different spectral characteristics, respectively, and can be respectively applied to the respective resist layers. Form the desired pattern. The difference in the spectral sensitivity characteristics of each of the resist layers can be grasped by comparing the wavelength value of the light providing the maximum sensitivity, the intensity of the maximum sensitivity, and the width of the wavelength range of the sensitivity according to the spectral sensitivity curve of each resist layer. In this embodiment, in particular, a plurality of resist layers having different resistive layer sensitivities are used, and a plurality of resistive layers having different wavelengths are used, and a plurality of exposure lights having different wavelengths are used to respectively make each resist layer "丨", thereby controlling each Resist residual film value. Therefore, in the present embodiment, it is preferable to compare the wavelength value of the light having the maximum value of the spectral sensitivity of one of the parameters indicating the wavelength dependence of the resist layer sensitivity, thereby determining the difference in the spectral sensitivity characteristics of the resist layer. For example, in the present embodiment, it is preferable to obtain the wavelength of the maximum spectral sensitivity of the i-th resist layer 4a and the wavelength at which the maximum spectral sensitivity of the second resist layer 4b is obtained. The difference is in the range of 5 〇 to 700 nm. Light that can be used as a normal optical lens or the like is present between short-wavelength light including vacuum ultraviolet rays that cannot be used in the atmosphere and long-wavelength light of 1000 nm or more that cannot be used by a normal optical lens. The wavelength range of 3〇〇~1〇〇〇nm. Therefore, the maximum wavelength difference in the range of the towel is · nm. According to the study of the present inventors, when the spectral sensitivity of the resist layer is compared within this range, the difference in wavelength corresponding to the maximum sensitivity in the present embodiment is preferably 50 nm or more. Further, the difference in the wavelength of the maximum sensitivity corresponding to each of the resist layers is preferably 1 〇〇 nm or more. In the present embodiment, for example, the first resist layer of the upper layer may contain a positive resist for the g line (wavelength 436 nm), and the second resist layer of the lower layer may contain the i line (wavelength 365 nm). Type resist. Further, any of the resist layers constituting the above-mentioned resist film 4 may be either a positive-type resistive J-n-resistance resist. Depending on the case, for example, the first resist layer may be a positive type and the second resist layer may be a negative type. Alternatively, the m-th agent layer may be made into a negative type, and the second resist layer may be made into a positive type. In the present embodiment, it is particularly preferable to use a positive type resist which is advantageous for the formation of a fine pattern. As a coating method of the resist, in order to improve the film thickness precision of the resist coating, a coating method capable of achieving the necessary precision can be selected. For example, a spin coater (P Coater·) CAP coater (CAp C() ater) can be applied. , die coater (9) e (four), spray coater (Spray, etc. After coating each resist, 151350.doc -13· 201131283 can be processed by heating or vacuum drying, etc. as needed. Since the resist film 4 is at least Including two layers of the resist layer, it is necessary to prevent the resist layer applied first from being coated by the influence of the solvent contained in the post-coated resist liquid, or mixed with the post-coated resist. In case, for example, it is preferred to use a resist which does not mix the solvent, or to perform baking ((4)), etc. for each time the resist is applied. Further, no exposure or development is performed. If the process of the process causes an obstacle, the desired retardation layer height difference can be formed, and the intermediate layer of the condition that the film thickness reduction of the resist layer is not hindered can be disposed between the resist layers, thereby preventing the resists from being mutually Mixed 〇, and the thickness of each resist layer In the case of transmitting the resist layer, the influence of the attenuation of the exposure light or the pattern formation accuracy is preferably set to a maximum of about 10 μm, and the film thickness of each of the resist layers is greater than 10 μm, which is difficult to apply with high precision. The amount of residual film caused by development is attenuated by the exposure light when the exposure light is transmitted through the resist layer, resulting in a gradient of sensitivity in the resist layer in a direction perpendicular to the surface of the barrier film, the resist layer Depending on the depth, the phenomenon that the sensitivity of the resist layer is different becomes remarkable, and it is difficult to form a high-precision resist pattern. On the other hand, in order to maintain the function as a resist layer, the minimum The film thickness must be set to about 03 μm. The method of manufacturing the multi-tone mask using the above-described mask substrate 10 will be described based on the steps shown in Figs. 1 (b) to (h). First, the specific spectral characteristics are used. The first exposure light 5 draws a first pattern on the resist film 4 of the mask base 10 (see FIG. 1(b)), and then uses 151350.doc 201131283 to have a second spectral characteristic different from that of the first exposure light 5 Exposure light 6 depicts the second pattern (See Fig. 1(c)). In the embodiment shown in Fig. 1, a positive resist is used for either of the first resist layer 4a and the second resist layer 4b, and the first exposure is used. The pattern of the light 5 is drawn, and the resist layer of the upper layer is exposed to a region corresponding to the light transmitting portion and the semi-light transmitting portion of the mask pattern formed by the end, and then by using the pattern of the second exposure light 6, The second resist layer of the lower layer is exposed to a region corresponding to the light transmitting portion of the mask pattern. In the resist pattern formed by the development after the drawing, the resist layer is formed by the second resist layer 4b. a portion of the thin and thin region of the layer height difference and by laminating the first resist layer 4a and the second resist layer 4b, forming a portion of the region having a thick film layer having a low retardation layer . The film thickness before the exposure is set to the maximum film thickness, and the exposure amount is changed, whereby the polymerization degree of the resist or the solubility to the solvent is changed, and the first resist after development can be controlled. The film thickness of each of the layer 4a and the second resist layer 4b (the retardation layer height difference). The spectral sensitivity distribution or the spectral transmittance of the first resist layer 4a and the second resist layer 4b, and the spectral characteristics or monochromatic properties of the first exposure light 5 and the second exposure light 6 can be considered, and the selection is easy to use. The combination of the resist layer and the exposure light. In the present embodiment, the first exposure light 5 is used to expose the upper first resist layer 4a, and the second exposure light 6 is used to expose the lower second resist layer 4b. Therefore, it is preferable that the sensitivity of the first resist layer 4a to the second exposure light 6 is lower than the sensitivity to the first exposure light 5, and the second sensitivity is the case where the residual film ratio of the resist after the development and the development is compared. The resist layer 4b has a lower sensitivity to the first exposure light 5 than to the second exposure light 6. I5I350.doc 201131283 The residual film rate is the thickness of the resist layer before exposure, which is expressed as a percentage. The thickness of the resist layer remaining after development. For example, when the resist layer of the film thickness (10) is exposed and developed, the residual resist film thickness is 65 Gnm, and the resist residual film ratio is 65 Å. When the sensitivity of W is low, for example, when the i-th resist layer & and the second resist layer are subjected to the same conditions of exposure and development, the residual film rate is less sensitive and the residual film of the resist layer is lower. When the rate is 80% and the residual film ratio of the second resist layer is 70%, it can be said that the sensitivity of the m-th agent layer to the exposure light is low. Here, any one of the first resist layer and the second resist layer is a clear shape of a positive resist, and the residual film rate of the second resist layer developed after exposure using the second exposure light 6 is blunt 70% or more, and the residual film ratio of the second resist layer is substantially 〇%, and the residual film ratio of the second resist layer developed after exposure with the ith exposure light 5 is 70% or more, and the first! The residual film ratio of the resist layer is substantially good, and it can be suitably carried out. When the residual film ratio is 5% by weight or less, the difference in the difference between the ith resist layer and the second resist layer is reduced. Further, in order to improve the pattern formation precision of the resist film, any one of the first resist layer and the second resist layer is a positive resist, and it is preferable to develop after exposure using the second exposure light 6. The residual film ratio of the second resist layer 4a is 90% or more, and the residual film ratio of the second resist layer is substantially 〇%' and the second resist layer 4b developed after exposure using the first exposure light 5 The residual film ratio is 90% or more, and the residue rate of the i-th resist layer is substantially 〇%. This is because the film which is necessary for the formation of the resist pattern is reduced, and a small amount of salt (the residual film rate value is close to 100 〇/〇) prevents the deformation of the resist pattern caused by the film amount from being reduced, thereby forming a more High precision pattern. In this embodiment, the exposure light suitable for each resist layer to be photosensitive may be selected, that is, the exposure light having a higher sensitivity to the resist layer to be photosensitive, and the respective resists are exposed. Floor. Further, in the present embodiment, the exposure light can be used with a low sensitivity (less absorption) to other resist layers. Therefore, the amount of exposure light attenuated by the influence of other resist layers is reduced, so that the exposure light can be used efficiently. Therefore, in the present embodiment, the exposure light is not greatly reduced by the layer of the resist layer, and as a result, since it is not necessary to greatly increase the amount of exposure, there is almost no occurrence of a layer of the resist layer. The effect of increasing the amount of exposure to increase the intensity of the exposure light, or increasing the exposure time and the like. In the present embodiment, it is preferable to first expose the first resist layer 4a of the upper layer by using the first exposure light 5, and then use the second exposure light 6 to expose the second resist layer 4b of the lower layer. The reason for this is that the resist layer contains a material which generates a photoreaction by irradiation of exposure light and contributes to pattern formation of the resist layer. The material that reacts with light such as shai absorbs specific light such as exposure light, and changes to a material having other characteristics after completion of the reaction. Therefore, the material before the photoreaction is reduced, and as a result, light is transmitted to light having a specific wavelength. The case of changes in optical properties such as rate. Therefore, when the second resist layer 4b of the lower layer is exposed by using the second exposure light 6, the second exposure light 6 passes through the second layer of the upper layer, so that the second exposure light is exposed at this time. In the case where the optical characteristics such as the transmittance of the first resist layer 4a are changed, the pattern accuracy or the like when the first resist layer of the upper layer is exposed by the first exposure light 5 is abnormal. Even when the first resist layer 4a of the upper layer is exposed first by using the first exposure light 5, the optical characteristics of the first resist layer 4a are changed, but since the pattern formation on the first resist layer is completed, The 151350.doc -17-201131283 anomaly is not generated without obstructing the transmission of the first exposure light 6 to the next wide second resist layer. However, even if the second resist layer 4b of the lower layer is exposed first, the change in optical characteristics occurring in the first resist layer 4a of the upper layer does not affect the pattern accuracy, etc. when the exposure to the first resist layer is continued. If the extent of the impact is not exceeded. Furthermore, in the present embodiment, the first resist layer of the upper layer is exposed to the light-transmitting portion and the semi-transmissive portion corresponding to the finally formed mask pattern by patterning using the second exposure light 5. The area is then drawn by the pattern of the second exposure light 6, and the second resist layer of the lower layer is exposed to the area corresponding to the light-transmitting portion of the mask pattern, so the upper layer! After the exposure light 5 is irradiated, the resist layer 4a also exposes the light transmitting portion region by the second exposure light 6. Therefore, in order to efficiently use the second exposure light 6 to react with the light of the second resist layer 4b, the transmittance of the second resist light 6 after the first resist layer 4a is irradiated with the second exposure light 5 is preferable. In the range of 6〇% or more and less than 100%, particularly preferably 80% or more and less than 100〇/〇. Further, the transmittance of light is obtained based on the ratio of the light intensity before and after transmission of a certain substance. For example, when the light intensity before entering the resist layer having a certain film thickness is set to 1%%, the light intensity of the resist layer is attenuated to 65% after passing through the resist layer. The rate is 65%. Further, the exposure amount of each of the exposure lights is changed in the plane, whereby the resist residual film value of the resist layer which is exposed by each exposure light is different in the plane. If the exposure amount of each exposure light is changed in the plane, the resist layer may be developed after the height of the layer of the resist layer is changed: 151350.doc 201131283 In-plane resist film thickness Different structure. Therefore, if the resist layer of the two layers is used so that the exposure light 1E and the irradiation region are adjusted so as to have two thicknesses in each of the resist layers, the entire thickness can be formed to include four different heights. The film thickness of the resist layer is high and low. Further, in the case where the resist layer is not only two layers but also a plurality of layers of three or more layers, the height difference can be formed by each of the resist layers, so that a difference in the number of the same number as the resistance d layer can be formed. . Further, in the case where the plurality of resist layers are also changed in the amount of exposure in the surface of each of the resist layers, the height difference structure can be further increased in addition to the height difference structure formed by the respective resist layers. However, as the exposure light, a light source having a broad wavelength region such as a mercury lamp or a xenon lamp, or a color filter or an interference filter that absorbs or reflects a part of the transmitted light to change the spectral characteristics may be used. Change the light of two or more kinds of wheat spectroscopic characteristics. Further, in the case of using a laser that can use monochromatic light or LED light, it is preferable to remove the overlapping portion of the spectral sensitivity distribution of the second exposure light and the second exposure light, thereby effectively selecting the exposure first resistance. The agent layer 4a and the second resist layer 4b. For example, the i-th resist layer 4a of the upper layer is a positive resist for the g-line (wavelength 436 nm), and the positive resist is used for the i-line (wavelength 365 nm) of the second resist layer of the lower layer. The first! As the exposure light of the resist layer 4a, a cardiac ion laser (wavelength: 413 nm) can be used, and as the exposure light to the second resist layer 4b, SH (} (wavelength 355 nm) of the YAG laser can be used. The pattern drawing using the first exposure light and the pattern drawing using the second exposure light may be divided into two, but when the drawing is performed using laser light or the like, the same exposure may be applied to the first exposure light and the second exposure. Light 2 color laser 151350.doc •19- 201131283 Light, surface exposure depicting roughly the same part. The latter helps to shorten the drawing time, or improve the coincidence accuracy of each drawing pattern depicted by a 2-color laser. In this case, it is possible to consider the arrangement of the laser light and the like in such a manner that the two-color laser light is left without interference or the like. Then, the development of the resist film 4 after the drawing is performed, thereby forming and utilizing Formed in the height difference structure of the second resistant layer 4a and the second resist layer, respectively, and the agent pattern 7 (refer to the figure. The resist film 4 after the description is basically Displayed by a developer suitable for each resist layer The case where the m-th agent layer 4a and the second resistance (four) are inclined to form a positive-type resist which is patterned by the difference in solubility between the exposed portion and the unexposed portion can simultaneously (simultaneously) develop the m-th agent layer 4a and the first 2 Resist layer is simple. Therefore, 'the development process is burdened with less age and less ^ is better. Of course, each resist developer will not cause special damage to other resistants, h, * Different kinds of scenes can be used in sequence; (Liquid is suitable for each blocking layer, and the liquid of the fourth layer is sequentially developed from the resist layer of the upper layer. Further, the resist film 4 is used negatively. In the case of a resist, it is also possible to select a developer and a developing method within the above-mentioned conditions, thereby appropriately developing the developing film. Thus, according to the embodiment, the spectral sensitivity is exposed. The characteristics are different, for example, the resistance layer M m ^ ^ of the two-layer resist layer, and the respective resist layers of the J film are sequentially drawn or imaged and developed from a plurality of different exposure lights. For each resist sound, the sound of the ^^^, .B knife forms a desired pattern, so that it can be accurately formed on the surface. The first resist pattern 7 has a difference in the number of layers of the resist film 4 which is the same as the resist layer 151350.doc 201131283. High and low difference structure. ^ And 'the first resist pattern 7 is used as a mask, and the light-shielding film 3 and the semi-transmissive film 2, for example, the light-transmitting portion forming region, are removed by a wet-type surname (see FIG. 1). (e)). In this case, for example, as a chrome-based opaque etch, for example, a diaphoric acid is used, and as a semi-transparent film of the lithograph, the liquid can be used, for example, in hydrofluoric acid or fluoride. An oxidizing agent such as hydrogen peroxide, sulfuric acid, or nitric acid is added to the gasification gas recording or the like. "/ Then, the first resist pattern 7 is reduced by a specific film amount by ashing or the like to form a thin resist layer on the first resist stratified portion and the semi-transmissive portion forming region from which the upper layer is removed. The second resist 8 (part of the second resist layer 4b) (see Fig. 1 (f)).且 and then the second resist pattern 8 is used as a mask, and the exposed light-shielding film 3 on the semi-transmissive portion is removed by wet etching to make the lower semi-transparent film 2 pass out (refer to the figure). 1 (g)). Furthermore, according to the combination of the light-shielding film and the film material of the semi-transmissive domain, the selectivity of the two is low, and the film is formed between the light-shielding film and the semi-transmissive film in advance (in the reticle substrate manufacturing stage). A film having an etch stop function can protect the underlying semi-transmissive film even when only the upper layer of the light-shielding film is removed by etching. The second resist pattern 8 remaining last is removed, thereby completing the light-shielding portion 21 including the laminated film including the semi-transmissive film 2 and the light-shielding film 3 on the transparent substrate 1 shown in FIG. 1(h), and exposing the transparent substrate. The translucent portion 22 of the crucible and the multi-adjustable (3-adjusted) mask 2 including the mask pattern of the semi-transmissive portion 23 of the semi-transmissive film 2. According to the present embodiment, as described above, since the resist pattern having the height difference structure of the resist layer having different residual film values of I5I350.doc 5 •21·201131283 can be formed with high precision, the resist is used. The pattern can produce a multi-tone mask that is formed with a high-precision pattern, in particular, a pattern with a high-precision control line width. In the above-described embodiment, the resist film is formed into a two-layer structure, but the resist layer may be further formed into a plurality of layers, and the exposure amount of each exposure light and the irradiation region may be adjusted to make the respective resist layers. A height difference is formed to form a resist pattern having a retardation layer height difference structure. By using the resist pattern, by combining a plurality of etchings and a plurality of times of the resist pattern reduction, it is also possible to produce a plurality of semi-transmissive portions, light-shielding portions, and light-transmitting portions having different transmittances, for example, four or more Multi-tone mask. Further, in the formation of the retardation layer structure, the resist layer having different spectral sensitivity characteristics may be used for each layer of the resist layer which is laminated so as to constitute a difference in height, and the respective layers may be individually exposed by exposure light having different wavelengths. In this case, for example, in the case of a positive resist, if a residual film of the resist layer is not formed in the exposed portion (photosensitive portion) after development, and the amount of the resist layer film is not reduced in the unphotosensitive portion, When the force σ = is applied to each of the na agent layers, each of the resist layers having the initial film thickness (residual film rate of approximately 100%) can be formed as a retardation layer. Since the resist pattern formed in such a manner that the film layer is not reduced as a part of the resist layer after development, the shape of the resist layer is reduced, and the formation of the resist d pattern is reduced, and the formation precision is improved, and finally formed in the light. The accuracy of the mask pattern of the cover is improved. Furthermore, the present invention can also provide a method of manufacturing an electronic device which, in the same manner as the above-described multi-tone mask, forms a resist pattern having a resist layer height difference structure, and uses the resist pattern to manufacture an electronic device. That is, the electronic device 151350.doc • 22-201131283 is characterized in that the method is prepared by stacking a plurality of film genus constituting an electronic device on a substrate, and the laminated layers thereon have different spectral sensitivities respectively. a processed body of a resist film having a plurality of resist layers, and sequentially developing a specific pattern on the resist film by using a plurality of exposure lights each having different spectral characteristics, thereby developing the resist film Forming the first resist pattern with different residual film values in the in-plane resist, and the above-mentioned first! The resist pattern is used as a mask, and the plurality of layers are formed by the film layer, and then the first resist pattern is reduced by a specific film amount, thereby forming a second resist pattern 'below' a resist pattern as a mask, (4) at least a portion of the plurality of film layers, and stepwise reducing the second resist pattern by a specific film amount, and reducing the film amount of the resist pattern as a mask 'repetition last name The number of times required to engrave at least a portion of the plurality of film layers is thereby patterned to form the plurality of film layers. Fig. 2 is a cross-sectional view for explaining the sequence of steps of the manufacturing method of the electronic device. Here, as an example of an electronic device, a butting substrate is formed. A metal film for a gate electrode is formed on the glass substrate 30, and a closed electrode 31 is formed by a photolithography process. Thereafter, the inter-electrode insulating film 32, the semiconductor film 33 (for example, a_Si), the second semiconductor film 34 (for example, N+a.Si), and the source/depolar metal film 35' are further laminated thereon. The resist film of the m-th agent layer 36a and the second resist layer 36b having different spectral sensitivity characteristics, respectively, is as shown in Fig. 2(a), and >, and then the first exposure light having specific spectroscopic characteristics is used in sequence, and The second exposure light having a different spectral characteristic from that of the first exposure light is formed by patterning a specific pattern on the resist film 36, and then developing a resist (4), thereby forming a resist on the surface 151350.doc -23-201131283 The first resist pattern 37 having a high difference structure having different film values (see FIG. 2(b)), thereby forming a cover TFT channel portion and a source/drain formation region, and a data line forming region 'and a channel portion is formed The first resist pattern 37 is thinner than the source/drain formation region. Then, the first resist pattern 3 7 is used as a mask, and the source/drain metal film 35 and the second layer are etched in the resistless pattern region. The first semiconductor films 34 and 33 (see FIG. 2(c)). Then, the amount of the first resist pattern 37 is reduced by ashing, thereby forming The second resist pattern 38 of the thin resist film in the channel formation region is removed (see FIG. 2(d)). Thereafter, the second resist pattern 38 is used as a mask, and the source/drain metal film 35 is etched. The source/drain electrodes 35a and 35b are formed, and then the second semiconductor film 34 is etched to remove the last remaining second resist pattern 38 (see FIGS. 2(e) and (f)). Thus, the height control line width can be manufactured. In this case, similarly to the multi-tone mask, the resist layer is further laminated, and the exposure amount of each exposure light and the irradiation region are adjusted, so that the respective resist layers form a height difference. This can form a resist pattern having a multi-step resist layer height difference structure. By using the resist pattern, a laminated film can be realized by combining a plurality of etchings and a plurality of times of the resist pattern film reduction treatment. The processing of the south precision of the film 'metal film'. The following is a description of the present invention by way of a specific example. On the quartz substrate, a semi-transmissive film containing a dreaming enamel is formed on the quartz substrate (exposure light transmittance is 50%), and Contains a light-shielding layer based on chromium and anti-reflection based on oxidized complex a layered light-shielding film on which an i-line (wavelength mn) is coated with a positive resist to a film thickness of 1 〇〇〇 nm for specific baking. 151350.doc • 24 - 201131283 The ^ line (wavelength 436 nm) is coated with a positive resist to a film thickness of 1000 nm, and the bamboo is specifically baked to form a resist film containing two resist layers having different spectral sensitivity characteristics. Cover substrate. Then using the mask substrate, a 3-tone mask is fabricated according to the steps shown in Fig. 1. First, a Kr ion laser (wavelength 413 nm) is used to describe the resist film of the mask substrate. The pattern (for example, the exposure corresponds to the area of the light transmissive portion and the semi-transmissive portion of the finally formed 3-tone mask). At this time, the upper layer is exposed by the resist layer, and the lower layer resist layer is also exposed due to the photosensitive region of the wavelength 413 11〇1. However, since the resist for the twisted wire used in the present embodiment has a low sensitivity to a wavelength of 413 nm (the residual film ratio of the resist after development is 70% or more), there is no particular hindrance. Further, the resist for the ruthenium used in the present embodiment caused a reaction of the photosensitive group having an absorption band of 480 nm or less due to the above exposure. Further, the transmittance of the exposed light (wavelength 355 nm) of the core line of the exposed region is increased from about 3% to about 8% by the original. Then, using a YAG laser THG (wavelength 355 nm), a specific pattern is drawn on the resist film (for example, an area corresponding to the light-transmitting portion of the last formed three-tone mask is exposed at this time, since the lower layer is used for the twist line) The resist layer is exposed, and the resist layer of the g line corresponding to the upper layer of the exposed region has been exposed with a laser having an initial wavelength of 413 nm, and the transmittance of the exposure light for the wavelength of 355 nm is increased to about 80%, so The exposure of the resist layer of the lower layer can be efficiently performed. Then, the development of the above resist film is performed simultaneously using an alkaline developing solution, and 151350.doc -25·201131283 is formed thereby having the respective g lines formed thereon. a first resist pattern having a height difference structure formed by a resist layer and a resist layer of a ruthenium line. Further, the mask pattern is used as a mask, and the resist pattern is removed by wet etching, for example. a light-shielding film and a semi-transmissive film in the light portion forming region. Then, the amount of the first resist pattern film is reduced by ashing, thereby forming a second resistance of the thin resist layer in which the semi-transmissive portion forming region is removed, for example. Agent pattern. Moreover, the second resist pattern As a mask, the exposed light-shielding film, for example, the semi-transmissive portion is removed by wet etching, and the lower semi-transmissive film is exposed. Finally, the remaining second resist pattern is removed. Thus, FIG. 1 (h) can be completed. The transparent substrate shown has a three-tone mask including a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion of the mask pattern. Thus, for example, the exposure includes two layers of resistive layers having different spectral sensitivity characteristics. Each of the resist layers of the film is formed by sequentially or simultaneously using two types of exposure light having different spectral characteristics θ (wavelengths) to form a pattern on each of the resist layers, whereby the in-plane resistance can be formed with high precision. The resist pattern of the high-low-difference structure of the resist layer with different residual film values, thereby making it possible to manufacture a multi-mode mask with a highly controlled pattern line width. The resist pattern having a resist layer height difference structure is not only used for multi-tone light The cover can also be used, for example, in the manufacture of an electronic device such as a substrate, by a plurality of etchings using a resist pattern having a multi-step high and low difference structure, and a film reduction of a plurality of resist patterns: With this shape The height is controlled to be the line width of the pattern', and it is possible to suppress the pattern of at least two repetitions of the pattern, and the fine pattern in which the alignment is inconsistent in the method of making the multi-tone mask. [Simplified illustration] 151350.doc • 26- 201131283 Figures l(a)-(h) are schematic cross-sectional views for explaining the method of manufacturing the multi-mode mask of the present invention in accordance with the steps. Figures 2(a)-(f) are diagrams for explaining the electronic device of the present invention. Outline of the manufacturing method. [Description of main components] 1 Transparent substrate 2 Semi-transmissive film 3 Light-shielding film 4 Resistive film 4a First resist layer 4b Second resist layer 7 First resist pattern 8 Second resistance Pattern pattern 10 Photomask substrate 20 Multi-mode mask 21 Light-shielding portion 22 Light-transmitting portion 23 Semi-transmissive portion 30 Glass substrate 31 Gate electrode 32 Gate insulating film 33 First semiconductor film 34 Second semiconductor film 35 Source/汲Extremely used metal film 151350.doc -27· 201131283 35a Source/drain 35b Source/drain 36 Resistive film 36a First resist layer 36b Second resist layer 37 First resist pattern 38 Second resist Pattern 151350.doc -28