TW201104353A - Multi-gradation photomask and method of manufacturing the same, and pattern transfer method - Google Patents

Multi-gradation photomask and method of manufacturing the same, and pattern transfer method Download PDF

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Publication number
TW201104353A
TW201104353A TW099111153A TW99111153A TW201104353A TW 201104353 A TW201104353 A TW 201104353A TW 099111153 A TW099111153 A TW 099111153A TW 99111153 A TW99111153 A TW 99111153A TW 201104353 A TW201104353 A TW 201104353A
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Taiwan
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semi
light
transmissive
film
exposure light
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TW099111153A
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Chinese (zh)
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TWI461837B (en
Inventor
Noboru Yamaguchi
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The purpose of the present invention is to obtain more accurate control of the shape of step difference of the photoresist pattern formed on the body to be transferred. The present invention is related to a multi-gradation photomask, which is to form on the transparent substrate the transferred pattern comprising the shading part, the transparent part, the first translucent part, and the second translucent part, while the transmissivity of the first translucent part to the exposed light is smaller than that of the second translucent part to the exposed light. And, by means of the manner in which the light intensity formed by the interference of the exposed light passing through the first translucent part and the exposed light passing through the second translucent part becomes the higher intensity than that of the exposed light passing through the first translucent part, the phase difference of the exposed light passing through the first translucent part and the exposed light passing through the second translucent part is controlled.

Description

201104353 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種液晶顯示裝置等平板顯示器（㈣ Panel Display，以下稱為FPD)等之製造中所使用之多調式 光罩、多調式光罩之製造方法、及圖案轉印方法。 【先前技術】 液晶顯示裝置中所使用之TFT(thin film transist〇r，薄膜 電晶體）基板係使用在透明基板上形成有包含遮光部及透 光部之轉印圖案的光罩，經過例如5次〜6次之光微影步驟 而製造。近年來，為減少光微影步驟數，逐漸使用在透明 基板上形成有包含遮光部、半透光部、透光部之轉印圖案 的多調式光罩》進而，本申請人提出，若使用在透明基板 上形成有包含遮光部、半透光部、第丨半透光部、第2半透 光部之轉印圖案的多調式光罩（四調式以上之遮罩），則可 經過例如3次〜4次之光微影步驟而製造基板。 [先前技術·文獻] [專利文獻] [專利文獻1]日本專利特開2〇〇7_；249198號公報 【發明内容】 [發明所欲解決之問題] 但是，使用上述多調式光罩於被轉印體上形成阻劑圖案 之情形時，有時難以將阻劑圖案之階差形狀控制得較為精 細。例如’使用在透明基板上形成有包含遮光部、透光 部、第1半透光部、第2半透光部之轉印圖案的多調式光罩 147633.doc 201104353 Z轉印體上形成阻劑圖案時，有於 ^光部之邊界部分處阻劑之剖面形狀難以垂直地形成^ 於阻劑圖案上形成不絜 ^或 抓之製造步驟, 凸的情形。其結果為，於 Α ^ ，有加工層之蝕刻精度劣化而製造良率 等惡化，或加工條件列表中需要極長之時間之情形。 本毛月之目的在於提供—種可將形成於被轉印體上之阻 劑圖案之階差形狀控制得更加精細之多調式光罩、以及該 夕調式光罩之製造方法。另外，本發明之目的在於提供一 種可將形成於被轉印體上之阻劑圖案之階差形狀控制得更 加精細，從而改善TFT等之製造良率及製造效率之圖案轉 印方法。 [解決問題之技術手段] 本發明之第1態樣係一種多調式光罩，其係於透明基板 上形成有包含遮光部、透光部、第〗半透光部及第2半透光 部之轉印圖案者，並且上述第1半透光部對曝光光之透過 率小於上述第2半透光部對上述曝光光之透過率，且以使 藉由透過上述第1半透光部之上述曝光光與透過上述第2半 透光部之上述曝光光之干涉所形成的光強度成為透過上述 第1半透光部之上述曝光光的光強度以上之方式，控制透 過上述第1半透光部之上述曝光光與透過上述第2半透光部 之上述曝光光的相位差。 本發明之第2態樣係如第1態樣之多調式光罩，其中以使 藉由透過上述第1半透光部之上述曝光光與透過上述透光 部之上述曝光光之干涉所形成的光強度成為透過上述第1 147633.doc 201104353 半透光部之上述曝光光的光強度以上之方式，控制透過上 述第1半透光部之上述曝光光與透過上述透光部之上述曝 光光的相位差。 本發明之第3態樣係一種如第丨或第2態樣之多調式光 罩，其係以使藉由透過上述第2半透光部之上述曝光光與 透過上述透光部之上述曝光光之干涉所形成的光強度成為 透過上述第2半透光部之上述曝光光的光強度以上之方 式，控制透過上述第2半透光部之上述曝光光與透過上述 透光部之上述曝光光的相位差。 本發明之第4態樣係如第1至第3態樣中任一態樣之多調 式光罩，其中上述第1半透光部係於上述透明基板上積層 第1半透光膜及第2半透光膜而成，上述第2半透光部係於 上述透明基板上形成上述第丨半透光膜而成。 本發明之第5態樣係如第丨至第3態樣中任一者之多調式 光罩，其中上述第1半透光部係於上述透明基板上形成第丄 半透光膜而成，上述第2半透光部係於上述透明基板上形 成第2半透光膜而成。 本發明之第6態樣係如第5態樣之多調式光罩，其中上述 第1半透光膜與上述第2半透光膜係包含互不相同之材料， 上述第1半透光膜對上述曝光光之透過率小於上述第2半透 光膜對上述曝光光之透過率。 本發明之第7態樣係如第1至第3態樣中任一態樣之多調 式光罩’其中上述第1半透光部係於上述透明基板上積層 第1半透光膜及第2半透光膜而成，上述第2半透光部係於 147633.doc 201104353 上述透明基板上形成上述第2半透光膜而成。 本發明之第8態樣係如第丨至第7態樣中任一態樣之多調 式光罩，其中上述轉印圖案為液晶顯示裝置製造用之圖 案。 本發明之第9態樣係一種多調式光罩之製造方法，其係 於透明基板上形成包含遮光部、透光部、第丨半透光部及 第2半透光部之轉印圖案者，且其包括以下步驟：準備於 上述透明基板上依序積層有第丨半透光膜、第2半透光膜及 遮光膜，且上述第1半透光膜及上述第2半透光膜對彼此之 蝕刻具有耐性之光罩基底之步驟；於上述遮光膜上，形成 分別覆蓋上述遮光部之形成預定區域及上述第丨半透光部 之形成預定區域的第丨阻劑圖案之步驟；以上述第丨阻劑圖 案作為遮罩而蝕刻上述遮光膜後，蝕刻上述第2半透光 膜，並去除上述第”且劑圖案之步m分別覆蓋上述 遮光部之形成預定區域及上述第2半透光部之形成預定區 域的第2阻劑圖案之步驟；及以上述第2阻劑圖案作為遮罩 而分別蝕刻上述遮光膜及上述第i半透光膜後，去除上述 第2阻劑圖案，形成上述遮光部、上述透光部、上述第1半 透光部及上述第2半透光部之步驟；並且，以控制透過上 述第1半透光部之上述曝光光與透過上述第2半透光部之上 述曝光光的相位差’而使藉由透過上述第i半透光部之曝 光光與透過上述第2半透光部之上述曝光光之干涉所形成 的光強度成為透過上述第K透光部之上述曝光光的光強 度以上之方式’選擇上述第1半透光膜及上述第2半透光膜 I47633.doc 201104353 之材質及膜厚。 本發明之第ίο態樣係一種多調式光罩之製造方法，其係 於透明基板上形成包含遮光部、透光部、第1半透光部及 第2半透光部之轉印圖案者，且其包括以下步驟：準備於 上述透明基板上依序積層有第1半透光膜及遮光膜、且上 述第1半透光膜及上述遮光膜對彼此之蝕刻具有耐性之光 罩基底之步驟；於上述遮光膜上，形成分別覆蓋上述遮光 部之形成預定區域及上述第1半透光部之形成預定區域的 第1阻劑圖案之步驟；以上述第1阻劑圖案作為遮罩而蝕刻 上述遮光膜後，蝕刻上述第1半透光膜，並去除上述第”且 劑圖案之步驟；於上述透明基板上及上述遮光膜上形成第 2半透光膜之步驟；於上述第2半透光膜上，形成分別覆蓋 上述遮光部之形成預定區域及上述第2半透光部之形成預 定區域的第2阻劑圖案之步驟；及以上述第2阻劑圖案作為 遮罩而飯刻上述第2半透光膜及上述遮光膜後，去除上述 第2阻劑圖案，形成上述遮光部、上述透光部、上述第丄半 透光部及上述第2半透光部之步驟；並且以控制透過上述 第1半透光部之上述曝光光與透過上述第2半透光部之上述 曝光光的相位差’而使藉由透過上述第1半透光部之曝光 光與透過上述第2半透光部之上述曝光光之干涉所形成的 光強度成為透過上述第1半透光部之上述曝光光的光強度 以上之方式’選擇上述第1半透光膜及上述第2半透光膜之 枒質及膜厚。 本發明之第11態樣係一種多調式光罩之製造方法，其係 147633.doc 201104353 於透明基板上形成包含遮光 楚〇电 '泰止如1乐1牛透光部及 第2丰透先^轉印圖案者，且其包括以下步驟 上述透明基板上形成有遮光膜之光罩基底之步驟;= 遮先膜上，形成覆蓋上述遮光部之形成預定區域之第】阻 劑圖案之步驟’以上述第”且劑圖案作為遮罩而蝕刻上述 遮光膜後，去除上述第i阻劑圖案之步 透明基板上及上述遮光臈上形成第i半透光膜之步驟；於 ^述第1半透光膜上，形成分別覆蓋上述遮光部之形成預 定區域及上述第1半透光部之形成預定區域的第2阻劑圖案 之步驟；以上述第2阻劑圖案作為遮軍而㈣上述第^透 光膜後，去除上述第2阻劑圖案之步驟；於上述透明基板 上及上述第1半透光膜上形成第2半透光膜之步驟；於上述 第2半透光膜上’形成分別覆蓋上述遮光部之形成預定區 域、上述第1半透光部之形成預定區域及上述第2半透光部 之形成預定區域的第3阻劑圖案之步驟；及以上述第3阻劑 圖案作為遮罩而蝕刻上述第2半透光膜後，去除上述第3阻 齊J圖案，形成上述遮光部、上述透光部、上述第1半透光 邛及上述第2半透光部之步驟；並且以控制透過上述第1半 透光部之上述曝光光與透過上述第2半透光部之上述曝光 光的相位差，而使藉由透過上述第丨半透光部之曝光光與 透過上述第2半透光部之上述曝光光之干涉所形成的光強 度成為透過上述第1半透光部之上述曝光光的光強度以上 之方式，選擇上述第1半透光膜及上述第2半透光膜之材質 及膜厚。 147633.doc 201104353 本發明之第12態樣係一種圖案轉印方法，其係經由在透 明基板上形成有包含遮光部、透光部、第1半透光部及第2 半透光部之轉印圖案的多調式光罩，對形成於被轉印體上 之阻劑膜照射曝光光’而於上述被轉印體上形成多調式之 阻劑圖案者，並且上述第1半透光部對上述曝光光之透過 率小於上述第2半透光部對上述曝光光之透過率，且以使 藉由透過上述第1半透光部之上述曝光光與透過上述第2半 透光部之上述曝光光之干涉所形成的光強度成為透過上述 第1半透光部之上述曝光光的光強度以上之方式，控制透 過上述第1半透光部之上述曝光光與透過上述第2半透光部 之上述曝光光的相位差。 本發明之第13態樣係如第12態樣之圖案轉印方法，其中 以使藉由透過上述第1半透光部之上述曝光光與透過上述 透光部之上述曝光光之干涉所形成的光強度成為透過上述 第1半透光部之上述曝光光的光強度以上之方式，控制透 過上述第1半透光部之上述曝光光與透過上述透光部之上 述曝光光的相位差。 本發明之第14態樣係如第12或第13態樣之圖案轉印方 法’其中以使藉由透過上述第2半透光部之上述曝光光與 透過上述透光部之上述曝光光之干涉所形成的光強度成為 透過上述第2半透光部之上述曝光光的光強度以上之方 式’控制透過上述第2半透光部之上述曝光光與透過上述 透光部之上述曝光光的相位差。 [發明之效果] 147633.doc 201104353 根據本發明，可提供一種能夠將形成於被轉印體上之阻 劑圖案之階差形狀控制得更加精細之多調式光罩、及該多 調式光罩之製造方法。另外，根據本發明，可提供一種能 夠將形成於被轉印體上之阻劑圖案之階差形狀控制得更加 精細，從而改善TFT等之製造良率及生產效率之圖案轉印 方法。 【實施方式】 &lt;本發明之第1實施形態&gt; 以下’一面參照圖式一面就本發明之第1實施形態進行 說明。 圖1 (a)係本實施形態之多調式光罩1 〇〇之部分剖面圖，圖 1 (b)係藉由多調式光罩1 〇〇而形成於被轉印體1上之阻劑圖 案4p之部分剖面圖。圖2係例示本實施形態之多調式光罩 100之製造步驟的流程之概略圖。圖7係包含使用本實施形 態之多調式光罩1 〇〇之圖案轉印步驟的TFT基板之製造方法 之流程圖。 (1)多調式光罩之構成 圖1 (a)所示之多調式光罩i 00例如係用於製造液晶顯示裝 置（LCD，liquid crystal display)之薄膜電晶體（TFT)或彩色 慮光片、或者電聚顯示面板（PDp，piasma display panel) 等。其中’圖1、圖2係例示光罩之積層結構者，實際之圖 案未必與此相同。 多調式光罩100具有轉印圖案，該轉印圖案包含：於使 用該多調式光罩100時遮蔽曝光光（光透過率約為〇%)之遮 147633.doc •10- 201104353 光部121 ;使透過率下降至2〇〜5〇%(將足夠寬之透光部之透 過率設為100%時。以下相同）、宜為3〇〜4〇%左右之第1半 透光部122 ;使透過率下降至3〇〜60% '宜為40〜50%左右之 第2半透光部123 ;及使曝光光1〇〇%透過之透光部124。如 此’第1半透光部122對曝光光之透過率係構成為小於第2 半透光部123對曝光光之透過率。 遮光部121係於玻璃基板等透明基板1丨〇上一併積層半透 光性之第1半透光膜111、半透光性之第2半透光膜112及遮 光膜113而成。第1半透光部122係藉由依序積層於透明基 板110上之第1半透光膜111及第2半透光膜112而成。第2半 透光部123係於透明基板110上形成第！半透光膜U1而成。 透光部124係將透明基板no之表面露出而成。再者，關於 第1半透光膜111、第2半透光膜112以及遮光膜113經圖案 化後之狀態，將於後文中加以說明。再者，實際之圖案中 包含第1半透光部122與第2半透光部123鄰接之部分、及/ ,或第2半透光部123與透光部124鄰接之部分、及/或第1半 透光部122與透光部124鄰接之部分◊例如，可將本發明應 用於具有圖8所示之轉印圖案之光罩。 透明基板110例如構成為包含石英（Si〇2)玻璃或含有 Si02、Al2〇3、B2〇3、RO、R2〇等之低脹玻璃等的平板。 透明基板110之主面（表面及背面）係經研磨等而構成得平坦 且平滑。透明基板110例如可設成一邊為30〇 上之方 形，例如可設成一邊為2000〜2400 mm之矩形。透明基板 110之厚度例如可設為3 mm〜20 mm。 147633.doc 201104353 第1半透光膜111係包含含有鉻（Cr)之材料，例如包含氛 化鉻（CrN)、氧化鉻（cr〇)、氮氧化鉻（Cr〇N)、氟化鉻（CrF) 等❶第1半透光膜111例如係構成為可使用包含含有硝酸鈽 銨（(NH4)2Ce(N〇3)6)及過氣酸（Ηα〇4)之純水的鉻用蝕刻液 進行蝕刻。另外，第}半透光膜U1對氟（F)系之蝕刻液（或 蝕刻氣體）具有耐蝕刻性，可作為如後述般使用氟（F)系之 蝕刻液（或蝕刻氣體）蝕刻第2半透光膜112時之蝕刻終止層 而發揮功能。 第2半透光膜112係包含含有鉬（M〇)等金屬材料及矽（Si) 之材料，例如包含 MoSi、M〇Si2 ' MoSiN、MoSiON、 MoSiCON等。第2半透光膜112係構成為可使用氟系之 蝕刻液（或蝕刻氣體）進行蝕刻。另外，第2半透光膜112對 上述鉻用蝕刻液具有耐蝕刻性，可作為如後述般使用鉻用 钱刻液触刻遮光膜113時之蝕刻終止層而發揮功能。 遮光膜113實質上包含鉻（Cr)。再者，若於遮光膜113之 表面積層Cr化合物（Cr0、CrC、CrN等），則可使遮光膜ιΐ3 之表面具備反射抑制功能。遮光膜丨丨3係構成為可使用上 述鉻用蝕刻液進行蝕刻。 圖1(b)中，例示藉由使用多調式光罩1〇〇之圖案轉印步 驟而於被轉印體1形成的阻劑圖案4p之部分剖面圖。阻劑 圖案4p係藉由經由多調式光罩1〇〇對形成於被轉印體ι上之 正型阻劑膜4照射曝光光並顯影而形成。被轉印體1具備美 板2及依序積層於基板2上之金屬薄膜或絕緣層、半導體層 等任意之被加工層3a〜3c，正型阻劑膜4係以均勻之厚度預 147633.doc •12- 201104353 先形成於被加I層3eJl °再者，被加4 3b可構成為對被 加工層3c之飯刻具有耐性，被加工層3a可構成為對被加工 .層3 b之敍刻具有耐性。 當經由多調式光罩100對正型阻劑膜4照射曝光光時，遮 光部⑵中曝光光無法透過，又，曝光光之光量以第i半透 光部122、第2半透光部123、透光部124之順序階段性地增 加。而且，正型阻劑膜4係膜厚於遮光部12〗、第ι半透光 部122、第2半透光部123各自對應之區域中依序變薄，且 在對應於透光部124之區域中被去除。如此，於被轉印體！ 上形成膜厚階段性地不同之阻劑圖案4p。 形成阻劑圖案4p後，可對在未由阻劑圖案4p覆蓋之區域 (對應於透光部124之區域）中露出之被加工層自表面 側起依序姓刻而加以去除（第1钱刻）。繼而，將阻劑圖案4p 灰化（減膜）而去除膜厚最薄之區域（對應於第2半透光部123 之區域），依序㈣新露出之被加H3b而加以去除 (第2钱刻）。接著，將阻劑圖案4p進一步灰化（減膜）而去除 膜厚次薄之區域（對應於第W透光部122之區域），钮刻新 露出之被加工層3c而加以去除（第3钱刻）。如此，藉由使用 膜厚階段性地不同之阻劑圆案4p，可實施先前3片光罩之 步驟’從而可減少遮罩片數，可將光微影步驟簡化。 再者’本實施形態之多調式光罩1〇〇中，以使藉由透過 半透光。P122之曝光光與透過第2半透光部123之曝光光 之干涉所形成的光強度成為透過第4透光部122之曝光光 光強度以上之方式，控制透過第】半透光部之曝光光 147633.doc -13- 201104353 與透過第2半透光部123之曝光光的相位差。例如，藉由使 透過第1半透光部122之曝光光與透過第2半透光部123之曝 光光的相位差為特疋量以下，而構成為不會於第1半透光 部 '第2半透光部之邊界處形成兩光相抵消而低於第i半透 光部之透過率的不需要之暗部。例如，此處係將相位差控 制為45。以内。藉此，可防止在對應於第κ透光部122之 區域與對應於第2半透光部123之區域的邊界區域中照射至 正型阻劑膜4之曝光光之強度小於第1半透光部。藉此，可 於被加工層上抑制該邊界區域之阻劑殘留。再者，假設上 述藉由干涉所形成之光強度與透過第丨半透光部之曝光光 之光強度相料，存在於該邊界部分產±第！半透光部之 一部分稍許變寬之作用的情形，即便為該情形，亦可進行 例如不對液晶動作造成影響的被加工層之加工。該情況於 第1半透光部122與透光部124之邊界 '第2半透光部123與 透光部124之邊界處亦相同。 另外，本實施形態之多調式光罩i 〇〇中，以使藉由透過 第1半透光部122之曝光光與透過透光部124之曝光光之干 涉所形成的光強度成為透過第丨半透光部122之曝光光之強 度以上之方式，控制透過第丨半透光部122之曝光光與透過 透光部124之曝光光的相位差。例如，將透過第丨半透光部 122之曝光光與透過透光部124之曝光光的相位差控制為 45。以内。藉由以此種方式控制對應於第1半透光部122之 區域與對應於透光部124之區域的邊界區域中照射至正型 阻劑膜4之曝光光的強度，可抑制該邊界區域之阻劑殘 I47633.doc 201104353 留，可不形成阻劑圖案4p之階差形狀所不需要之凹凸。 另外，本實施形態之多調式光罩1〇〇中，以使藉由透過 第2半透光部123之曝光光與透過透光部} 24之曝光光之干 涉所形成的光強度成為透過第2半透光部123之曝光光的光 強度以上之方式，控制透過第2半透光部123之曝光光與透 過透光部124之曝光光的相位差。例如，將透過第2半透光 部123之曝光光與透過透光部ι24之曝光光的相位差控制為 45。以内。藉由以此種方式控制對應於第2半透光部123之 區域與對應於透光部124之區域的邊界區域中照射至正型 阻劑膜4之曝光光的光強度，可抑制該邊界區域之阻劑殘 留’可不形成阻劑圖案4p之階差形狀所不需要之凹凸。 再者’上述中’透過第丨半透光部122的曝光光之相位及 光透過率可藉由第1半透光膜111之材質及膜厚、與第2半 透光膜112之材質及膜厚的組合而設定。另外，透過第2半 透光部123的曝光光之相位及光透過率可藉由第2半透光膜 112之材質及膜厚而設定。 (2)多調式光罩之製造方法 繼而，一面參照圖2，一面就本實施形態之多調式光罩 100之製造方法進行說明。 (光罩基底準備步驟） 首先’如圖2(a)所例示般，準備於透明基板110上依序形 成有第1半透光膜1Π、第2半透光膜112、遮光膜ιη，且 於最上層形成有第1阻劑膜131之光罩基底l〇〇b。再者，第 1阻劑膜131可由正型光阻材料或負型光阻材料所形成。以 147633.doc 201104353 下之說明中’第1阻劑膜13 1係由正型光阻材料所形成。第 1阻劑膜131例如可使用旋塗或狹縫塗佈等方法而形成。 (第1圖案化步驟） 繼而’藉由雷射繪圖機等進行繪圖曝光，使第1阻劑膜 131感光’利用喷霧方式等方法向第1阻劑膜13丨供給顯影 液而進行顯影，形成分別覆蓋遮光部121之形成預定區域 及第1半透光部122之形成預定區域的第1阻劑圖案丨3ip。 將形成有第1阻劑圖案13 1 p之狀態例示於圖2(b)中。 然後’以所形成之第1阻劑圖案1 3 1 p作為遮罩而触刻遮 光膜11 3，並且以第1阻劑圖案丨3 lp或殘留之遮光膜u 3作 為遮罩而蝕刻第2半透光膜112，使第1半透光膜π!局部露 出。繼而’將第1阻劑圖案13 lp剝離等而加以去除。再 者’以殘留之遮光膜113作為遮罩而虫刻第2半透光膜Π2 時，亦可將第1阻劑圖案13 lp預先剝離後再進行。遮光膜 11 3之蝕刻可藉由利用喷霧方式等方法將上述鉻用蝕刻液 供給至遮光膜113而進行。第2半透光膜112之蝕刻可藉由 將氟（F)系之钱刻液（或触刻氣體）供給至第2半透光膜112而 進行。對於第1阻劑圖案13 lp，可藉由使剝離液接觸第1阻 劑圖案131p而使其剝離。 然後’形成覆蓋殘留之遮光膜113及露出之第1半透光膜 111的第2阻劑膜132。第2阻劑膜132可由正型光阻材料或 負型光阻材料形成。以下之說明中，第2阻劑膜13 2係由正 型光阻材料所形成。第2阻劑膜132例如可使用旋塗或狹縫 塗佈等方法而形成。將形成有第2阻劑膜132之狀態例示於 147633.doc 201104353 圖2(c)中。 (第2圖案化步驟） 紐而.使用雷射繪圖機等進行繪圖曝光而使第2阻劑膜 32感光利用喷霧方式等方法向第2阻劑膜132供給顯影 液而進行顯# ’形成分別覆蓋遮光部l2i之形成預定區域 及第2半透光。卩丨]]之形成預定區域的第2阻劑圖案η#。 將形成有第2阻劑圖案132{)之狀態例示於圖2(d)中。 “繼而以所形成之第2阻劑圖案132p作為遮罩而蝕刻遮 光膜113及第1半透光膜111，使第2半透光膜112及透明基 板110局部露出。遮光膜113及第丨半透光膜lu之蝕刻可藉 由利用噴霧方式等方法將上述鉻用蝕刻液供給至遮光膜 113及第1半透光膜丨丨丨而進行。 繼而，將第2阻劑圖案132p剝離等而加以去除，完成本 貫細•形態之多調式光罩1〇〇之製造。對於第2阻劑圖案 132p，可藉由使剝離液接觸第2阻劑圖案l32p而使其剝 離。將於透明基板110上形成有包含遮光部121、透光部 124、第1半透光部122及第2半透光部^之轉印圖案的多 調式光罩100的部分剖面圖例示於圖2(e)中。 再者，準備光罩基底1 〇〇b時，係以使透過第}半透光部 122的曝光光之相位及光透過率、透過第2半透光部123的 曝光光之相位及光透過率滿足上述條件之方式，選擇第1 半透光膜111之材質及膜厚、以及第2半透光膜112之材質 及膜厚。 (3) TFT基板之製造方法 147633.doc •17· 201104353 接者’一面參照圖7’ 一面就包含使用多調式光罩100之 圓案轉印步驟的TFT基板之製造方法進行說明。藉由使用 構成為四調式光罩之多調式光罩1〇〇，TFT基板可經過以下 之第1〜第3遮罩製程而製造。 (第1遮罩製程） 首先，如圖7(a)所示，於玻璃基板10上形成作為金屬膜 而構成之閘極電極膜20。閘極電極膜20例如係藉由如下方 式而形成：使用濺鍍或 CVD(Chemical Vap0I· Deposition， 化學氣相沈積）等方法於玻璃基板10上形成金屬薄膜（未圖 示）後，使用具有包含遮光部及透光部之轉印圖案的二元 (二調式）遮罩實施光微影步驟，將上述金屬薄膜圖案化。 然後，如圖7(b)所示，於閘極電極膜2〇上及玻璃基板1〇 之露出面上’依序形成閘極絕緣膜2】、氫化非晶矽膜22、 歐姆接觸膜23、金屬薄膜24。閘極絕緣膜21、氫化非晶矽 膜22、歐姆接觸膜23例如可藉由CVD而成膜，金屬薄膜24 例如可藉由濺鍍而成膜。 (第2遮罩製程） 繼而，於金屬薄膜24上以均勻之厚度形成正型阻劑膜 (未圖示）。繼而，使用包含遮光部、透光部、半透光部之 多調式（二調式）光罩，對上述正型阻劑膜照射曝光光，並 對上述正型阻劑膜進行顯影而圖案化。其結果為，如圖 7(c)所不，形成以如下方式而構成之阻劑圖案31 :局部覆 蓋閘極電極膜20之上方，並且對應於遮光部之區域中上述 正型阻劑膜之膜厚較厚’對應於半透光部之區域中上述正 147633.doc 201104353 型阻劑臈之膜厚較薄。再 置閘極電極膜20之區域)中/於光部之區域(未設 成為金屬菊摇ο 上述正型阻劑膜被去除，而 -· /專膜24之表面局部露出之狀態。 出=屬=劑圖案31作為遮罩，面側起依序編 去η/、24、歐姆接觸膜23、氫化非晶碎膜22而加以 狀:例極絕緣膜Μ之表面局部露出。將儀刻完成後之 狀慼例不於圖7(c)中。 然座後’將阻劑圖㈣灰化（減膜）而去除膜厚較薄之區域 匕應於半透光部之區域)’使基底之金屬薄膜以之表面局 4出。繼而，自表面側起依序钱刻新露出之金屬薄膜 I歐姆接觸膜23而加以去除。將钱刻完成後之狀態例示 於圖7(d)中。 •、4而將阻劑圖案3 i剝離等而加以去除，以覆蓋露出之 、，邑、彖膜21、纟化非晶矽膜22、歐姆接觸膜、金屬薄 膜24之整個面之方式’形成例如包含氮切（SiNx)等之鈍 膜（表面保δ蒦膜）41。鈍化膜4 j例如可藉由c 而形成。 將形成有鈍化膜41之狀態例示於圖7(e)中。 (第3遮罩製程） 繼而，於形成之鈍化膜41上，以表面成為平坦面之方式 形成正型阻劑膜（未圖示）。然後，使用包含遮光部121、透 光。P 124、第1半透光部122、第2半透光部123的本實施形 態之多s周式（四調式）光罩丨〇〇，對上述正型阻劑膜照射曝光 光，並對上述正型阻劑膜進行顯影而圖案化。此處，例如 可應用具有圖8所示之圖案的四調式光罩。其結果為，如 147633.doc -19- 201104353 圖7(g)所示，形成以如下方式而構成之阻劑圖案32 :於遮 光部121、第1半透光部122、第2半透光部123各自所對應 之區域中，上述正型阻劑膜之膜厚依序變薄。再者，對應 於透光部124之區域（如後文中將述，藉由蝕刻鈍化膜41而 形成接觸孔41h之區域）中，上述正型阻劑膜被去除，鈍化 膜41之表面局部露出。此處，所使用之四調式光罩之圖案 的剖面形狀如圖7(f)所示，圖8中示出其俯視圖。再者，由 於被加工體之表面存在階差，故即便所塗佈之阻劑層之表 面為平面，阻劑膜厚亦因區域而不同，因此如圖7(f)所 示，分別配置第1半透光部122及第2半透光部123 ,以圖案 形成後之阻劑膜厚達到所需值的方式來考量圖案形成前之 各區域的阻劑膜厚，使各區域之曝光光之透過光量互不相 同，藉此使對應於第1半透光部！ 22之阻劑圖案3 2之膜厚、 與對應於第2半透光部123之阻劑圖案32之膜厚形成為最終 達到均一。藉此，於後續步驟之灰化時，可防止阻劑殘 留、或對被加工層之過度蝕刻。 然後’以阻劑圖案3 2作為遮罩，触刻露出之鈍化膜4丨而 加以去除，形成接觸孔41 h。將形成有接觸孔4丨h之狀態例 示於圖7(g)中。 然後’將阻劑圖案32灰化而去除膜厚較薄之區域（對應 於第1半透光部122及第2半透光部123之區域），使基底之 純化膜4 1之表面局部露出。將阻劑圖案32灰化後之狀態例 示於圖7(h)中。 然後’於所形成之接觸孔4 lh之内壁面上、及所露出之 147633.doc -20- 201104353 鈍化膜41之表面上形成例如包含IT0(Indium Tin 〇xide， 氧化銦錫）或IZ〇(Indium Zinc Oxide，氧化銦鋅）之透明導 電膜51。再者，透明導電膜51係亦於阻劑圖案32之表面上 形成。將形成有透明導電膜5 1之狀態例示於圖7(i)中。 然後，將阻劑圖案32剝離等（舉離）而加以去除，製造出 本實施形態之TFT基板。將阻劑圖案32去除後之狀態例示 於圖7(j)中。例如，如上所述，若透過第j半透光部122之 曝光光與透過第2半透光部123之曝光光之間的相位差過 大’則會於該變界部分之被轉印體上產生阻劑之凸部，即 便進行灰化阻劑亦殘留。該殘留阻劑上會形成下一步驟之 透明導電膜5 1，進而於後續步驟之舉離過程中，連同阻劑 而透明導電膜一併被去除。經過此種過程而製造之TFT無 法進行正常動作。根據本實施形態，藉由使透過第丨半透 光部122之曝光光與透過第2半透光部123之曝光光的相位 差為特疋呈以下，於该邊界部分之被轉印體上不會產生阻 劑之凸部’而抑制灰化後之阻劑殘留。 (4)本實施形態之效果 根據本實施形態，可發揮出以下所示之一種或複數種效 果。 本實施形態之多調式光罩100中，α使藉由透過第i半透 光部122之曝光光與透過第2半透光部123之曝光光之干涉 所形成的光強度成為透過第丨半透光部122之曝光光的光強 度以上之方式，控制透過第1半透光部丨22之曝光光與透過 第2半透光部123之曝光光的相位差。藉由以此種之方式控 147633.doc 201104353 制對應於第1半透光部122之區域與對應於第2半透光部123 之區域的邊界區域中照射至正型阻劑膜4之曝光光的強 度，可抑制該邊界區域之被轉印體上之阻劑殘留，不形成 被轉印體上形成之阻劑圖案之階差形狀所不需要之凹凸， 而將階差形狀控制得更加精細。 另外，本實施形態之多調式光罩100中，以使藉由透過 第1半透光部122之曝光光與透過透光部124之曝光光之干 涉所形成的光強度成為透過第丨半透光部122之曝光光的光 強度以上之方式，控制透過第丨半透光部122之曝光光與透 過透光部124之曝光光的相位差。藉由以此種方式控制對 應於第1半透光部122之區域與對應於透光部124之區域的 邊界區域中照射至正型阻劑膜4之曝光光的強度可抑制 該邊界區域之被轉印體上之阻劑殘留，不形成被轉印體上 形成之阻劑圖案之階差形狀所不需要之凹凸，而將階差形 狀控制得更加精細。 另外本貫施形態之多調式光罩1 00中，以使藉由透過 第2半透光部丨23之曝光光與透過透光部124之曝光光之干 涉所形成的光強度成為透過第2半透光部123之曝光光的強 度以上之方式，控制透過第2半透光部123之曝光光與透過 透光部124之曝光光的相位差。藉由以此種方式控制對應 於第2半透光部123之區域與對應於透光部124之區域的邊 界區域中照射至正型阻劑膜4之曝光光的光強度，可抑制 s亥邊界區域之阻劑殘留’使被轉印體上形成之阻劑圖案的 階差形狀接近於如設計值之垂直剖面，而將階差形狀控制 147633.doc •22- 201104353 得更加精細。 另外’包含使用本實施形態之多調式光罩100之圖案轉 印步驟的TFT基板之製造方法中，在對應於第1半透光部 122之區域與對應於第2半透光部123之區域的邊界區域、 對應於第1半透光部122之區域與對應於透光部124之區域 的邊界區域、以及對應於第2半透光部123之區域與對應於 透光部124之區域的邊界區域之任一者中’均可抑制該邊 界區域之阻劑殘留，而不形成阻劑圖案32之階差形狀所不 需要之凹凸。藉此，可提昇TFT等半導體裝置之品質，改 善製造良率。例如，於上述TFT基板之製造方法中，可抑 制接觸孔41h内之阻劑殘留、及將阻劑圖案32灰化時之阻 劑殘留的發生’避免因阻劑殘留而引起的接觸孔41h内之 接觸不良或透明導電膜51之膜剝離。 &lt;本發明之第2實施形態&gt; 以下，一面參照圖式一面就本發明之第2實施形態進行 說明。 圖3(a)係本實施形態之多調式光罩200之部分剖面圖，圖 3(b)係藉由該多調式光罩200而形成於被轉印體1上的阻劑 圖案4p之部分剖面圖》圖4係例示本實施形態之多調式光 罩200之製造步驟的流程之概略圖。 (1)光罩之構成 圖3(a)所示之多調式光罩200具有轉印圖案，該轉印圖案 包含：使用該多調式光罩200時遮蔽曝光光（光透過率約為 0%)之遮光部221 ;使透過率下降至20~50%、宜為30〜40% 147633.doc 23· 201104353 左右之第1半透光部222;使透過率下降至30〜6.0%、宜為 40〜50°/。左右之第2半透光部223 ;及使曝光光約1〇〇%透過 之透光部224 ^如此，第i半透光部222對曝光光之透過率 係構成為小於第2半透光部223對曝光光之透過率。 遮光部221係於玻璃基板等透明基板21〇上依序積層半透 光性之第1半透光膜211、遮光膜213以及半透光性之第2半 透光膜212而成。第1半透光部222係將形成於透明基板21〇 上之第1半透光膜211圖案化而成。第2半透光部223係於透 明基板210上形成第2半透光膜212而成。透光部224係將透 明基板210之表面露出而成。再者，關於第丨半透光膜 211遮光膜2 1 3以及第2半透光膜2 1 2經圖案化後之狀態， 將於後文中加以說明。 透明基板2 1 0係與上述實施形態同樣地構成。 第1半透光膜211係由包含鉬（M〇)等金屬材料及矽（si)之 材料所形成，例如包含MoSi、M〇Si2、MoSiN、MoSiON、 MoSiCON等。第1半透光膜211係構成為可使用氟（F)系之 蝕刻液（或蝕刻氣體）進行蝕刻。另外’第丨半透光膜2ιι可 作為如後所述般使用上述鉻用蝕刻液蝕刻第2半透光膜 2 12、遮光膜2 13時之蝕刻終止層而發揮功能。 遮光膜213實質上包含鉻（Cr)。再者，若於遮光膜213之 表面積層Cr化合物（Cr0、CrC、CrN等），則可使遮光膜Η] 之表面具備反射抑制功能。遮光膜213係構成為可使用上 述鉻用蝕刻液進行蝕刻。 第2半透光膜212係包含含有絡（c〇之材料，例如包含氮 H7633.doc • 24- 201104353 化鉻（CrN)、氧化鉻（cr〇)、氮氧化鉻（cr〇N)、氟化鉻（CrF) 等。第2半透光膜212係構成為可使用上述鉻用蝕刻液進行 触刻。 圖3(b)中’例示藉由多調式光罩2〇〇而形成於被轉印體1 上之阻劑圖案4p之部分剖面圖。即便使用本實施形態之多 調式光罩200，亦可與上述實施形態同樣地於被轉印體1上 形成膜厚階段性地不同之阻劑圖案4p。 再者，本實施形態之多調式光罩2〇〇中，與上述實施形 態同樣’以使藉由透過第1半透光部222之曝光光與透過第 2半透光部223之曝光光之干涉所形成的光強度成為透過第 1半透光部222之曝光光的光強度以上之方式，控制透過第 1半透光部222之曝光光與透過第2半透光部223之曝光光的 相位差。另外，以使藉由透過第1半透光部222之曝光光與 透過透光部224之曝光光之干涉所形成的光強度成為透過 第1半透光部222之曝光光的光強度以上之方式，控制透過 第1半透光部222之曝光光與透過透光部224之曝光光的相 位差。另外，以使藉由透過第2半透光部223之曝光光與透 過透光部224之曝光光之干涉所形成的光強度成為透過第2 半透光部223之曝光光的光強度以上之方式，控制透過第2 半透光部223之曝光光與透過透光部224之曝光光的相位 差。藉此’關於對應於第1半透光部222之區域、對應於第 2半透光部223之區域 '對應於透光部224之區域之任一 者，均可抑制該區域之邊界附近之阻劑殘留，而不產生阻 劑圖案4p之階差形狀所不需要之凹凸。 147633.doc -25- 201104353 再者’上述中，透過第1半透光部222的曝光光之相位及 光透過率可藉由第1半透光膜211之材質及膜厚而設定。另 外’透過第2半透光部223的曝光光之相位及光透過率可藉 由第2半透光膜212之材質及膜厚而設定。 (2)多調式光罩之製造方法 接著，一面參照圖4，一面就本實施形態之多調式光罩 200之製造方法進行說明。 (光罩基底準備步驟） 首先’如圖4(a)所例示般，準備於透明基板210上依序積 層有第1半透光膜211、遮光膜213，且於最上層形成有第1 阻劑膜23 1之光罩基底2〇〇b。再者，第1阻劑膜23 1可由正 型光阻材料或負型光阻材料形成。以下之說明中，第1阻 劑膜23 1係由正型光阻材料所形成。第1阻劑膜23丨例如可 使用旋塗或狹縫塗佈等方法而形成。 (第1圖案化步驟） 繼而’使用雷射繪圖機等進行繪圖曝光，使第1阻劑膜 231感光’利用喷霧方式等方法向第1阻劑膜231供給顯影 液而進行顯影，形成分別覆蓋遮光部22丨之形成預定區域 及第1半透光部222之形成預定區域的第1阻劑圖案23lp。 將形成有第1阻劑圖案23 1 p之狀態例示於圖4(b)中。 繼而，以所形成之第1阻劑圖案23 lp作為遮罩而蝕刻遮 光膜213，並且以第1阻劑圖案231]3或殘留之遮光膜213作 為遮罩而蝕刻第1半透光膜211，使透明基板21〇之表面局 部露出。繼而，將第1阻劑圖案231p剝離等而加以去除。 147633.doc -26- 201104353 再者，以殘留之遮光膜213作為遮罩而蝕刻第丨半透光膜 211時，亦可將第！阻劑圖案231p預先剝離後再進行。遮光 膜213之蝕刻可藉由利用喷霧方式等方法將上述鉻用蝕刻 液供給至遮光膜213而進行。第〗半透光膜211之蝕刻可藉 由將氟（F)系之餘刻液（或钱刻氣體）供給至第2半透光膜2 ^ 2 而進行。對於第1阻劑圖案231p，可藉由使剝離液接觸第！ 阻劑圖案231p而使其剝離。蝕刻完成後之狀態例示於圖 4(c)中。 (第2半透光膜形成步驟） 然後’以分別覆蓋殘留之遮光膜2丨3及露出之透明基板 210之方式形成第2半透光膜212。第2半透光膜212例如可 藉由濺鍍而形成。之後，以覆蓋所形成之第2半透光膜212 之方式形成第2阻劑膜232。第2阻劑膜232可由正型光阻材 料或負型光阻材料形成。以下之說明中，第2阻劑膜232係 由正型光阻材料所形成。第2阻劑膜232例如可使用旋塗或 狹縫塗佈等方法而形成。將形成有第2半透光膜212及第2 阻劑膜232之狀態例示於圖4(d)中。 (第2圖案化步驟） 繼而’使用雷射繪圖機等進行繪圖曝光而使第2阻劑膜 232感光’利用喷霧方式等方法向第2阻劑膜232供給顯影 液而進行顯影，形成分別覆蓋遮光部22丨之形成預定區域 及第2半透光部223之形成預定區域的第2阻劑圖案232p。 將形成有第2阻劑圖案232p之狀態例示於圖4(e)中。 然後’以所形成之第2阻劑圖案232p作為遮罩而蝕刻第2 147633.doc -27- 201104353 半透光膜212及遮光膜213，使第1半透光膜211局部露出， 並且以所形成之第2阻劑圖案232p作為遮罩而蝕刻第2半透 光膜212，使透明基板21〇局部露出。遮光膜213及第2半透 光膜212之蝕刻可藉由利用喷霧方式等方法將上述鉻用蝕 刻液供給至遮光膜213及第2半透光膜212而進行。再者， 此時第1半透光膜211係作為姓刻終止層而發揮功能。 繼而’將第2阻劑圖案232p剝離等而加以去除，完成本 實施形態之多調式光罩200之製造。對於第2阻劑圖案 232p，可藉由使剝離液接觸第2阻劑圖案232p而使其剝 離。將於透明基板210上形成有包含遮光部22ι、透光部 224、第1半透光部222及第2半透光部223之轉印圖案的多 調式光罩200之部分剖面圖例示於圖4(f)。 再者，準備光罩基底200b時，以使透過第1半透光部222 之曝光光之相位及光透過率、透過第2半透光部223之曝光 光之相位及光透過率滿足上述條件之方式，選擇第1半透 光膜211之材質及膜厚、以及第2半透光膜212之材質及膜 厚。 即便使用本實施形態之多調式光罩200，亦可實施上述 TFT基板之製造方法。另外’即便利用本實施形態之多調 式光罩200，亦發揮與上述效果相同之效果。 &lt;本發明之第3實施形態&gt; 以下，一面參照圖式，一面就本發明之第3實施形態進 行說明。 圖5(a)係本實施形態之多調式光罩3〇〇之部分剖面圖，圖 147633.doc •28- 201104353 5(b)係藉由該多調式光罩300而形成於被轉印體1上之阻劑 圖案之部分剖面圖》圖6係例示本實施形態之多調式光罩 之製造步驟的流程之概略圖。 (1)光罩之構成 圖5 (a)所示之多調式光罩3 00具有轉印圖案，該轉印圖案 包含：使用該多調式光罩300時遮蔽曝光光（光透過率約為 0%)之遮光部321 ;使透過率下降至20~50%、宜為30〜40% 左右之第1半透光部322;使透過率下降至3 0〜60%、宜為 4〇〜5〇%左右之第2半透光部323 ;及使曝光光約100%透過 之透光部324。如此，第1半透光部322對曝光光之透過率 係構成為小於第2半透光部323對曝光光之透過率。 遮光部321係於玻璃基板等透明基板310上積層有遮光膜 313、半透光性之第1半透光膜311及半透光性之第2半透光 膜312而成。第1半透光部3 22係於透明基板310上積層第1 半透光膜311及第2半透光膜312而成。第2半透光部323係 於透明基板310上形成第2半透光膜312而成。透光部324係 將透明基板310之表面露出而成。再者，關於第1半透光膜 311、遮光膜313以及第2半透光膜312經圖案化後之狀態， 將於後文中加以說明。 透明基板310係與上述實施形態同樣地構成。 第1半透光膜311係包含含有鉬（Mo)等金屬材料及矽（Si) 之材料，例如包含 MoSi、MoSi2、MoSiN、MoSiON、 MoSiCON等。第1半透光膜311係構成為可使用上述氟（F) 糸触刻液（或敍刻氣體）進行姓刻。另外，第1半透光膜3 11 I47633.doc -29· 201104353 係、由含有鉻(Cr)之材料所形成，例如可含有氮化鉻(㈣、 氧化鉻（CrO)、氮氧化鉻（Cr0N)、氟化鉻（CrF)等。於此情 形時’第！半透光膜3⑽構成為可使用上述鉻用姓刻液^ 行#刻。 遮光膜313實質上由鉻（Cr)所形&amp;。再者，若於遮光膜 313之表面積層Cr化合物（Cr0、CrC、CrN等），則可使遮光 膜3 13之表面具備反射抑制功能。遮光膜313係構成為可使 用上述絡用錄刻液進行飯刻。 第2半透光膜312係包含含有鉻（c〇之材料，例如包含氮 化鉻（CrN)、氧化鉻（Cr0)、氮氧化鉻（Cr〇N)、氟化鉻（CrF) 等。第2半透光膜312係構成為可使用鉻用蝕刻液進行蝕 刻。另外，第2半透光膜3 1 2係包含含有鉬（Mo)等金屬材料 及石夕（Si)之材料’例如可包含M〇si、MoSiz、MoSiN、 MoSiON、MoSiCON等。於此情形時，第2半透光膜312係 構成為可使用上述氟（F)系蝕刻液（或蝕刻氣體）進行蝕刻。 圖5(b)中’例示藉由多調式光罩3〇〇而形成於被轉印體1 上之阻劑圖案4p之部分剖面圖。即便使用本實施形態之多 調式光罩3 00，亦可與上述實施形態同樣地於被轉印體1上 形成膜厚階段性地不同之阻劑圖案4p。 再者’本實施形態之多調式光罩300中，與上述實施形 態同樣’以使藉由透過第i半透光部322之曝光光與透過第 2半透光部323之曝光光之干涉所形成的光強度成為透過第 1半透光部322之曝光光的光強度以上之方式，控制透過第 1半透光部322之曝光光與透過第2半透光部3 23之曝光光的 147633.doc -30- 201104353 相位差。另外，以使藉由透過第1半透光部322之曝光光與 透過透光部324之曝光光之干涉所形成的光強度成為透過 第1半透光部322之曝光光的光強度以上之方式，控制透過 第1半透光部322之曝光光與透過透光部324之曝光光的相 位差。另外’以使藉由透過第2半透光部323之曝光光與透 過透光部324之曝光光之干涉所形成的光強度成為透過第2 半透光部3 23之曝光光的光強度以上之方式，控制透過第2 半透光部323之曝光光與透過透光部324之曝光光的相位 差。藉此，關於對應於第1半透光部3 22之區域、對應於第 2半透光部323之區域、對應於透光部324之區域之任一 者，均可抑制該區域之邊界附近之阻劑殘留，可不形成阻 劑圖案4p之階差形狀所不需要之凹凸。 再者，上述中’透過第1半透光部322之曝光光之相位及 光透過率係藉由第1半透光膜311之材質及膜厚而設定。另 外’透過第2半透光部323之曝光光之相位及光透過率係藉 由第2半透光膜312之材質及膜厚而設定。 (2)光罩之製造方法 接著，一面參照圖6，一面就本實施形態之多調式光罩 300之製造方法進行說明。 (光罩基底準備步驟） 首先，如圖6(a)所例示般，準備於透明基板3 1 〇上形成有 遮光膜313 ’且於最上層形成有第丨阻劑膜331之光罩基底 300b。再者，第1阻劑膜33 1可由正型光阻材料或負型光阻 材料形成。以下之說明中，第1阻劑膜33 1係由正型光阻材 147633.doc 31 201104353 料所形成。第1阻劑膜33丨例如可使用旋塗或狹縫塗佈等方 法而形成。 (第1圖案化步驟） 繼而，使用雷射繪圖機等進行繪圖曝光而使第丨阻劑膜 33 1感光，利用喷霧方式等方法向第I阻劑膜33 1供給顯影 液而進行顯影，形成覆蓋遮光部321之形成預定區域的第j 阻劑圖案33 lp。將形成有第1阻劑圖案33 lp之狀態例示於 圖 6(b)。 繼而，以所形成之第i阻劑圖案33 lp作為遮罩而蝕刻遮 光膜313，使透明基板31〇之表面局部露出。繼而，將第五 阻劑圖案331p剝離等而加以去除。遮光膜313之蝕刻可藉 由利用噴霧方式等方法將上述絡用蝕刻液供給至遮光膜 313而進行。對於第”且劑圖案33ip，可藉由使剝離液接觸 第1阻劑圖案3 3 1 p而使其剝離。 (第2圖案化步驟） 然後，以分別覆蓋殘留之遮光膜313及露出之透明基板 3/0之方式形成第1半透光膜311。第1半透光膜311例如可 藉由減錄而形成。之後’以覆蓋所形成之第1半透光膜311 之方式形成第2阻劑膜332。第2阻劑膜332可由正型光阻材 ; ''或負里光P且材料形成。以下之說明巾第2阻劑膜扣係 由正型光阻材料所形成。第2阻劑膜332例如可使用旋塗或 狹縫塗佈等方法而形成。將形成有第ljf透光膜3ιι及第2 阻劑膜332之狀態例示於圖6(c)中。 繼而，使用雷射繪圖機等進行繪圖曝光而使第2阻劑膜 147633.doc •32· 201104353 332感光’利用喷霧方式等方法向第2阻劑膜332供給顯影 液而進行顯影，形成分別覆蓋遮光部321之形成預定區域 及第1半透光部322之形成預定區域的第2阻劑圖案332p。 將形成有第2阻劑圖案332p之狀態例示於圖6(d)中。 然後’以所形成之第2阻劑圖案332p作為遮罩而蝕刻第i 半透光膜311，使透明基板3 1〇之表面局部露出。繼而，藉 由剝離等將第2阻劑圖案33 2p去除。第1半透光膜311之蝕 刻可藉由將上述氟（F)系姓刻液（或蚀刻氣體）供給至第1半 透光膜311而進行。對於第2阻劑圖案332p，可藉由使剝離 液接觸第2阻劑圖案332p而使其剝離。 (第3圖案化步驟） 然後，以分別覆蓋殘留之第丨半透光膜3丨丨及露出之透明 基板310之方式形成第2半透光膜312。第2半透光膜312例 如可藉由濺鍍而形成。之後，以覆蓋所形成之第2半透光 膜3 12之方式形成第3阻劑膜333。第3阻劑膜333可由正型 光阻材料或負型光阻材料形成。以下之說明中，第3阻劑 膜3 33係由正型光阻材料所形成。第3阻劑膜333例如可使 用旋塗或狭縫塗佈等方法而形成。將形成有第2半透光膜 312及第3阻劑膜333之狀態例示於圖6(e)中。 、 繼而使用田射繪圖機等進行繪圖曝光而使第3阻劑膜 333感光’利用噴霧方式等方法向第3阻劑膜供給顯影 液而進行顯影’形成分別覆蓋遮光部321之形成預定區 域、第1半透光部322之形成預定區域、及第2半透光部⑵ 之形成預定區域的第3阻劑圓案333p。將形成有第3阻劑圖 147633.doc -33· 201104353 案333p之狀態例示於圖6(f)中。 然後’以所形成之第3阻劑圖案333p作為遮罩而蝕刻第2 半透光膜312，使透明基板310之表面局部露出。第2半透 光膜3 1 2之蝕刻可藉由將上述鉻系蝕刻液供給至第2半透光 膜312而進行。 繼而’將第3阻劑圖案333p剝離等而加以去除，完成本 實施形態之多調式光罩300之製造。對於第3阻劑圖案 333p ’可藉由使剝離液接觸第3阻劑圖案333p而使其剝 離。將於透明基板310上形成有包含遮光部321、透光部 324、第1半透光部322及第2半透光部323之轉印圖案的多 調式光罩300之部分剖面圖例示於圖6(g)中。 再者’形成第1半透光膜311及第2半透光膜312時，以使 透過第1半透光部322之曝光光之相位及光透過率、透過第 2半透光部323之曝光光之相位及光透過率滿足上述條件之 方式，選擇第1半透光膜311之材質及膜厚、以及第2半透 光膜312之材質及膜厚。 即便使用本實施形態之多調式光罩300，亦可實施上述 TFT基板之製造方法。另外，即便利用本實施形態之多調 式光罩300，亦發揮與上述效果相同之效果。 &lt;本發明之其他實施形態&gt; 以上’對本發明之實施形態進行了具體說明，但本發明 並不限定於上述實施形態’本發明可於不脫離其主旨之範 圍内進行各種變更。 【圖式簡單說明】 147633.doc -34· 201104353 圖1 (a)係本發明第1實施形態之多調式光罩之部分剖面圖 (示意圖），圖1 (b)係藉由使用該多調式光罩之圖案轉印步 驟於被轉印體上形成的阻劑圖案之部分剖面圖； 圖2(a)〜(e)係例示本發明第1實施形態之多調式光罩之製 造步驟的流程之概略圖； 圖3(a)係本發明第2實施形態之多調式光罩之部分刮面圖 (示意圖）’圖3(b)係藉由使用該多調式光罩之圖案轉印步 驟於被轉印體上形成的阻劑圖案之部分剖面圖（示意圖）； 圖4(a)-(f)係例示本發明第2實施形態之多調式光罩之製 造步驟的流程之概略圖； 圖5(a)係本發明第3實施形態之多調式光罩之部分剖面圖 (示意圖），圖5(b)係藉由使用該多調式光罩之圖案轉印步 驟於被轉印體上形成的阻劑圖案之部分剖面圖（示意圖）； 圖6(a)-(g)係例示本發明第3實施形態之多調式光罩之製 造步驟的流程之概略圖； 圖7(a)-(j)係包含使用本發明第丨〜第3實施形態之多調式 光罩之圖案轉印步驟的TFT基板之製造方法之流程圖；及 圖8係本發明第1實施形態之多調式光罩之平面放大圖。 【主要元件符號說明】 多調式光罩 光罩基底 透明基板 第1半透光膜 第2半透光膜 100 ' 200 ' 300 100b 、 200b 、 300b 110、210、310 111 、 211 、 311 112' 212 ' 312 147633.doc 35- 201104353 113 、 213 、 121 、 221 、 122 ' 222 ' 123 、 223 、 124 ' 224 、 131p 、 231p 132p 、 232p 333p 313 遮光膜 321 遮光部 322 第1半透光部 323 第2半透光部 324 透光部 、331p 第1阻劑圖案 、332p 第2阻劑圖案 第3阻劑圖案 147633.doc -36-BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-tone mask and a multi-mode mask used in the manufacture of a flat panel display such as a liquid crystal display device (hereinafter referred to as a panel display, hereinafter referred to as FPD). Manufacturing method and pattern transfer method. [Prior Art] A TFT (thin film transistor) substrate used in a liquid crystal display device uses a photomask having a transfer pattern including a light shielding portion and a light transmitting portion formed on a transparent substrate, for example, 5 It is manufactured by the light lithography step of the next ~6 times. In recent years, in order to reduce the number of photolithography steps, a multi-tone mask having a light-shielding portion, a semi-transmissive portion, and a transfer pattern of a light-transmitting portion formed on a transparent substrate has been gradually used. Further, the applicant proposes to use A multi-tone mask (four-tone or more mask) including a light-shielding portion, a semi-transmissive portion, a second semi-transmissive portion, and a second semi-transmissive portion transfer pattern formed on the transparent substrate can be passed through, for example, The substrate was fabricated by a light lithography step of 3 times to 4 times. [Prior Art and Literature] [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. 249-198. [Invention] [Problems to be Solved by the Invention] However, the above-described multi-tone mask is used to be rotated. In the case where a resist pattern is formed on the printed body, it is sometimes difficult to control the step shape of the resist pattern to be finer. For example, 'a multi-tone mask having a transfer pattern including a light-shielding portion, a light-transmitting portion, a first semi-transmissive portion, and a second semi-transmissive portion formed on a transparent substrate is used. 147633.doc 201104353 Z is formed on the transfer body. In the case of the pattern, there is a case where the cross-sectional shape of the resist at the boundary portion of the light portion is hard to be formed vertically, and the manufacturing step of forming the resist pattern on the resist pattern is convex. As a result, in Α ^ , the etching precision of the processed layer is deteriorated, the manufacturing yield is deteriorated, or the processing condition list requires an extremely long time. The purpose of the present invention is to provide a multi-tone mask which can control the step shape of the resist pattern formed on the transfer target to be more fine, and a method of manufacturing the same. Further, an object of the present invention is to provide a pattern transfer method which can control the step shape of a resist pattern formed on a transfer target to be finer, thereby improving the manufacturing yield and manufacturing efficiency of a TFT or the like. [Means for Solving the Problems] A first aspect of the present invention is a multi-tone mask in which a light shielding portion, a light transmitting portion, a first semi-transmissive portion, and a second semi-transmissive portion are formed on a transparent substrate. In the transfer pattern, the transmittance of the first semi-transmissive portion to the exposure light is smaller than the transmittance of the second semi-transmissive portion to the exposure light, and is transmitted through the first semi-transmissive portion. The light intensity formed by the interference between the exposure light and the exposure light transmitted through the second semi-transmissive portion is equal to or higher than the light intensity of the exposure light transmitted through the first semi-transmissive portion, and is controlled to pass through the first semi-transparent. The exposure light of the light portion is out of phase with the exposure light transmitted through the second semi-transmissive portion. According to a second aspect of the present invention, in the multi-mode mask of the first aspect, the exposure light passing through the first semi-transmissive portion and the exposure light transmitted through the light transmitting portion are formed. Controlling the exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the light transmissive portion by controlling the light intensity to be greater than or equal to the light intensity of the exposure light in the semi-transmissive portion of the first 147633.doc 201104353 The phase difference. A third aspect of the present invention is the multi-tone mask of the second or second aspect, wherein the exposure light transmitted through the second semi-transmissive portion and the exposure through the light transmitting portion are The light intensity formed by the interference of light is equal to or higher than the light intensity of the exposure light transmitted through the second semi-transmissive portion, and the exposure light transmitted through the second semi-transmissive portion and the exposure through the light transmitting portion are controlled. The phase difference of the light. A fourth aspect of the present invention is the multi-tone mask of any one of the first to third aspects, wherein the first semi-transmissive portion is formed by laminating a first semi-transparent film on the transparent substrate and The semi-transmissive film is formed by forming the second semi-transmissive film on the transparent substrate. A fifth aspect of the invention is the multi-tone mask of any one of the third aspect to the third aspect, wherein the first semi-transmissive portion is formed by forming a second semi-transparent film on the transparent substrate. The second semi-transmissive portion is formed by forming a second semi-transmissive film on the transparent substrate. According to a sixth aspect of the invention, the first semi-transmissive film and the second semi-transmissive film comprise mutually different materials, the first semi-transmissive film. The transmittance of the exposure light is smaller than the transmittance of the second semi-transmissive film to the exposure light. A seventh aspect of the present invention is the multi-mode mask of any one of the first to third aspects, wherein the first semi-transmissive portion is formed on the transparent substrate, and the first semi-transparent film is laminated The second semi-transmissive film is formed by forming the second semi-transmissive film on the transparent substrate of 147633.doc 201104353. An eighth aspect of the invention is the multi-modulation reticle according to any one of the second aspect to the seventh aspect, wherein the transfer pattern is a pattern for manufacturing a liquid crystal display device. According to a ninth aspect of the present invention, in a method of manufacturing a multi-tone mask, a transfer pattern including a light shielding portion, a light transmitting portion, a second semi-transmissive portion, and a second semi-transmissive portion is formed on a transparent substrate. And comprising the steps of: sequentially depositing a second semi-transmissive film, a second semi-transmissive film, and a light shielding film on the transparent substrate, and the first semi-transmissive film and the second semi-transparent film a step of etching a mask substrate having resistance to each other; and forming, on the light shielding film, a step of covering a predetermined region of the light shielding portion and a formation of a predetermined region of the second semi-light transmission portion; After the light shielding film is etched by using the first resist pattern as a mask, the second semi-transmissive film is etched, and the step m of removing the first and second agent patterns covers a predetermined region of the light shielding portion and the second portion a step of forming a second resist pattern in a predetermined region of the semi-transmissive portion; and etching the light-shielding film and the ith semi-transmissive film by using the second resist pattern as a mask, and removing the second resist Pattern to form the above shading a step of the light transmitting portion, the first semi-transmissive portion, and the second semi-transmissive portion; and controlling the exposure light transmitted through the first semi-transmissive portion and transmitting the second semi-transmissive portion The phase difference of the exposure light is such that the light intensity formed by the interference between the exposure light transmitted through the i-th semi-transmissive portion and the exposure light transmitted through the second semi-transmissive portion is transmitted through the K-th transmission The material of the first semi-transmissive film and the second semi-transmissive film I47633.doc 201104353 and the film thickness of the first semi-transmissive film and the second semi-transmissive film I47633.doc 201104353 are selected as the multi-tone light. A method of manufacturing a cover for forming a transfer pattern including a light shielding portion, a light transmitting portion, a first semi-transmissive portion, and a second semi-transmissive portion on a transparent substrate, and comprising the steps of: preparing the transparent substrate a step of sequentially depositing a first semi-transmissive film and a light-shielding film, and the first semi-transmissive film and the light-shielding film are resistant to each other; wherein the light-shielding film is formed to cover the light-shielding film The predetermined area and upper surface of the shading portion are formed a step of forming a first resist pattern in a predetermined region of the first semi-transmissive portion; etching the light-shielding film by using the first resist pattern as a mask, etching the first semi-transmissive film, and removing the first a step of forming a second semi-transmissive film on the transparent substrate and the light-shielding film; forming a predetermined region covering the light-shielding portion and the first portion on the second semi-transmissive film a step of forming a second resist pattern in the predetermined region in the semi-transmissive portion; and removing the second resistor by engraving the second semi-transmissive film and the light-shielding film with the second resist pattern as a mask And a step of forming the light-shielding portion, the light-transmitting portion, the second semi-transmissive portion, and the second semi-transmissive portion; and controlling the exposure light transmitted through the first semi-transmissive portion and transmitting the light The phase difference ′ of the exposure light of the semi-transmissive portion is such that the light intensity formed by the interference between the exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the second semi-transmissive portion is transmitted. The above exposure of the first semi-transmissive portion The above embodiment the light intensity of the light 'selects the first and the second semitransparent film quality and thickness of the semipermeable film Sam's. The eleventh aspect of the present invention is a method for manufacturing a multi-tone mask, which is formed on a transparent substrate by a 147633.doc 201104353, which comprises a light-shielding 〇 〇 ' 泰 如 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 a transfer pattern, comprising the steps of: forming a mask substrate on which a light-shielding film is formed on the transparent substrate; and forming a first resist pattern on the mask to cover a predetermined region of the light-shielding portion. a step of etching the light-shielding film by using the first "and" pattern as a mask, removing the ith semi-transmissive film on the transparent substrate on the step of removing the i-th resist pattern and the light-shielding layer; a step of forming a second resist pattern covering a predetermined region of the light-shielding portion and a predetermined region of the first semi-transmissive portion on the light-transmissive film; and using the second resist pattern as a shield (4) a step of removing the second resist pattern after the light-transmissive film; a step of forming a second semi-transmissive film on the transparent substrate and the first semi-transmissive film; and on the second semi-transmissive film Forming a cover to cover the formation of the light shielding portion a step of forming a predetermined region of the first semi-transmissive portion and a third resist pattern of the second semi-transmissive portion in a predetermined region; and etching the third resist pattern as a mask After the semi-transmissive film is removed, the third resist J pattern is removed to form the light-shielding portion, the light-transmitting portion, the first semi-transmissive layer, and the second semi-transmissive portion; and a phase difference between the exposure light passing through the semi-transmissive portion and the exposure light transmitted through the second semi-transmissive portion, and exposure light passing through the second semi-transmissive portion and transmitting through the second semi-transmissive portion The light intensity formed by the interference of the exposure light is equal to or higher than the light intensity of the exposure light transmitted through the first semi-transmissive portion, and the materials of the first semi-transmissive film and the second semi-transmissive film are selected and The twentieth aspect of the present invention is a pattern transfer method in which a light-shielding portion, a light-transmitting portion, a first semi-transmissive portion, and a second semi-transparent light are formed on a transparent substrate. Part of the transfer pattern of the multi-tone mask, formed on a resist film on the transfer body irradiates the exposure light to form a multi-tone resist pattern on the transfer target, and the transmittance of the first semi-transmissive portion to the exposure light is smaller than the second semi-transparent The light transmittance of the light portion to the exposure light is such that the light intensity formed by the interference between the exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the second semi-transmissive portion is transmitted through The phase difference between the exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the second semi-transmissive portion is controlled to be greater than or equal to the light intensity of the exposure light in the first semi-transmissive portion. The thirteenth aspect is the pattern transfer method according to the twelfth aspect, wherein the light intensity formed by the interference between the exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the light transmitting portion is formed The phase difference between the exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the light-transmitting portion is controlled so as to be equal to or higher than the light intensity of the exposure light transmitted through the first semi-transmissive portion. According to a fourth aspect of the present invention, in the pattern transfer method of the twelfth or thirteenth aspect, the exposure light transmitted through the second semi-transmissive portion and the exposure light transmitted through the light transmitting portion are The light intensity formed by the interference is equal to or higher than the light intensity of the exposure light transmitted through the second semi-transmissive portion, and the exposure light transmitted through the second semi-transmissive portion and the exposure light transmitted through the light transmitting portion are controlled. Phase difference. [Effects of the Invention] 147633.doc 201104353 According to the present invention, it is possible to provide a multi-tone mask capable of controlling a step shape of a resist pattern formed on a transfer target to be finer, and a multi-tone mask Production method. Further, according to the present invention, it is possible to provide a pattern transfer method capable of controlling the step shape of the resist pattern formed on the transfer target to be finer, thereby improving the manufacturing yield and production efficiency of the TFT or the like. [Embodiment] &lt;First Embodiment of the Invention&gt; The following is a description of the first embodiment of the present invention with reference to the drawings. Fig. 1 (a) is a partial cross-sectional view of the multi-mode mask 1 of the present embodiment, and Fig. 1 (b) is a resist pattern formed on the transfer body 1 by a multi-mode mask 1 Partial profile of 4p. Fig. 2 is a schematic view showing the flow of the manufacturing steps of the multi-mode mask 100 of the present embodiment. Fig. 7 is a flow chart showing a method of manufacturing a TFT substrate using the pattern transfer step of the multi-tone mask 1 of the present embodiment. (1) Configuration of multi-mode mask The multi-mode mask i 00 shown in Fig. 1 (a) is, for example, a thin film transistor (TFT) or a color filter for manufacturing a liquid crystal display (LCD). Or a poly display panel (PDp, piasma display panel). Wherein, Fig. 1 and Fig. 2 exemplify a laminated structure of a photomask, and the actual pattern is not necessarily the same. The multi-mode reticle 100 has a transfer pattern, and the transfer pattern includes: a cover portion 147633.doc •10-201104353 light portion 121 when the exposure light (light transmittance is about 〇%) is used when the multi-mode reticle 100 is used; The transmittance is reduced to 2 〇 to 5 〇% (when the transmittance of the light-transmitting portion is sufficiently wide is 100%, the same applies hereinafter), preferably the first semi-transmissive portion 122 of about 3 〇 to 4 〇%; The transmittance is reduced to 3 〇 to 60%, which is preferably about 40 to 50% of the second semi-transmissive portion 123; and the light-transmitting portion 124 that transmits the exposure light by 1%. Thus, the transmittance of the first semi-transmissive portion 122 to the exposure light is smaller than the transmittance of the second semi-transmissive portion 123 to the exposure light. The light-shielding portion 121 is formed by laminating a semi-transmissive first semi-transmissive film 111, a semi-transparent second semi-transmissive film 112, and a light-shielding film 113 on a transparent substrate 1 such as a glass substrate. The first semi-transmissive portion 122 is formed by sequentially laminating the first semi-transmissive film 111 and the second semi-transmissive film 112 on the transparent substrate 110. The second half of the light transmitting portion 123 is formed on the transparent substrate 110! The semi-transparent film U1 is formed. The light transmitting portion 124 is formed by exposing the surface of the transparent substrate no. The state in which the first semi-transmissive film 111, the second semi-transmissive film 112, and the light shielding film 113 are patterned will be described later. Further, the actual pattern includes a portion adjacent to the first semi-transmissive portion 122 and the second semi-transmissive portion 123, and/or a portion of the second semi-transmissive portion 123 adjacent to the light transmitting portion 124, and/or The portion of the first semi-transmissive portion 122 adjacent to the light transmitting portion 124 can be applied, for example, to a photomask having the transfer pattern shown in FIG. The transparent substrate 110 is, for example, a flat plate containing quartz (Si〇2) glass or a low-expansion glass containing SiO 2 , Al 2 〇 3, B 2 〇 3, RO, R 2 〇 or the like. The main surface (surface and back surface) of the transparent substrate 110 is flat and smooth by polishing or the like. The transparent substrate 110 can be formed, for example, in a square shape of 30 Å on one side, and for example, a rectangle having a side of 2000 to 2400 mm can be provided. The thickness of the transparent substrate 110 can be, for example, 3 mm to 20 mm. 147633.doc 201104353 The first semi-transmissive film 111 comprises a material containing chromium (Cr), for example, containing chromium (CrN), chromium oxide (cr), chromium oxynitride (Cr〇N), chromium fluoride ( The first semi-transmissive film 111 such as CrF) is, for example, etched using chromium containing pure water containing ammonium cerium nitrate ((NH 4 ) 2 Ce (N 〇 3) 6 ) and peroxy acid ( Η α 〇 4). The liquid is etched. Further, the first semi-transmissive film U1 has etching resistance to a fluorine (F)-based etching liquid (or etching gas), and can be etched as a fluorine (F)-based etching liquid (or etching gas) as described later. The semi-transmissive film 112 functions as an etch stop layer. The second semi-transmissive film 112 includes a material containing a metal material such as molybdenum (M〇) and germanium (Si), and includes, for example, MoSi, M〇Si2 'MoSiN, MoSiON, MoSiCON, or the like. The second semi-transmissive film 112 is configured to be etched using a fluorine-based etching liquid (or an etching gas). In addition, the second semi-transmissive film 112 has etching resistance to the etching liquid for chromium, and functions as an etching stopper layer when the light-shielding film 113 is engraved with chromium using a chromium engraving liquid as will be described later. The light shielding film 113 substantially contains chromium (Cr). Further, when the surface layer of the light-shielding film 113 is a Cr compound (such as Cr0, CrC or CrN), the surface of the light-shielding film ITO 3 can have a reflection suppressing function. The light-shielding film 3 is configured to be etched using the above etching solution for chromium. In Fig. 1(b), a partial cross-sectional view of the resist pattern 4p formed on the transfer target 1 by the pattern transfer step using the multi-tone mask 1 is exemplified. The resist pattern 4p is formed by irradiating the positive resist film 4 formed on the transfer target ι with the exposure light through the multi-mode mask 1 and developing it. The transfer target 1 includes a metal plate 2, a metal thin film or an insulating layer sequentially laminated on the substrate 2, and any processed layers 3a to 3c such as a semiconductor layer, and the positive resist film 4 is uniformly 147633. Doc •12- 201104353 First formed in the added layer I 3eJl °, plus 4 3b can be formed to be resistant to the meal of the processed layer 3c, the processed layer 3a can be configured to be processed. Layer 3 b Narrative is patience. When the positive resist film 4 is irradiated with the exposure light via the multi-mode mask 100, the exposure light in the light shielding portion (2) is not transmitted, and the amount of the exposure light is the i-th semi-transmissive portion 122 and the second semi-transmissive portion 123. The order of the light transmitting portions 124 is increased stepwise. Further, the positive resist film 4 is thicker in thickness in the regions corresponding to the light shielding portion 12, the first semi-transmissive portion 122, and the second semi-transmissive portion 123, and corresponds to the light transmitting portion 124. The area is removed. So, in the transfer body! A resist pattern 4p having a film thickness different in stages is formed thereon. After the resist pattern 4p is formed, the processed layer exposed in the region not covered by the resist pattern 4p (corresponding to the region of the light transmitting portion 124) can be sequentially removed from the surface side (first money) engraved). Then, the resist pattern 4p is ashed (reduced film) to remove the region where the film thickness is the thinnest (corresponding to the region of the second semi-transmissive portion 123), and is newly removed by the addition of H3b (2). Money carved). Next, the resist pattern 4p is further ashed (reduced film) to remove the region where the film thickness is second (corresponding to the region of the W-th light-transmissive portion 122), and the newly exposed processed layer 3c is removed and removed (3rd) Money carved). Thus, by using the resist film 4p having a different film thickness in stages, the steps of the previous three masks can be carried out, whereby the number of masks can be reduced, and the photolithography step can be simplified. Further, in the multi-tone mask of the present embodiment, the light is transmitted through the semi-transmissive light. The light intensity formed by the interference between the exposure light of P122 and the exposure light transmitted through the second semi-transmissive portion 123 is equal to or higher than the intensity of the exposure light transmitted through the fourth light-transmitting portion 122, and the exposure of the first semi-transmissive portion is controlled. Light 147633.doc -13- 201104353 The phase difference with the exposure light transmitted through the second semi-transmissive portion 123. For example, the phase difference between the exposure light transmitted through the first semi-transmissive portion 122 and the exposure light transmitted through the second semi-transmissive portion 123 is not more than the first semi-transmissive portion. At the boundary of the second semi-transmissive portion, an unnecessary dark portion in which the two light cancels and is lower than the transmittance of the i-th semi-transmissive portion is formed. For example, here the phase difference is controlled to 45. Within. Thereby, the intensity of the exposure light irradiated to the positive resist film 4 in the boundary region corresponding to the region corresponding to the κ light transmitting portion 122 and the region corresponding to the second semi light transmitting portion 123 can be prevented from being less than the first semipermeable. Light department. Thereby, the residue of the boundary region can be suppressed on the layer to be processed. Furthermore, it is assumed that the intensity of light formed by the interference and the intensity of the light of the exposure light transmitted through the second semi-transmissive portion are present in the boundary portion. In the case where a part of the semi-transmissive portion is slightly widened, even in this case, processing of the layer to be processed which does not affect the liquid crystal operation can be performed. In this case, the boundary between the first semi-transmissive portion 122 and the light-transmitting portion 124 is also the same at the boundary between the second semi-transmissive portion 123 and the light-transmitting portion 124. Further, in the multi-mode mask of the present embodiment, the light intensity formed by the interference between the exposure light transmitted through the first semi-transmissive portion 122 and the exposure light transmitted through the transmissive portion 124 is transmitted. The phase difference between the exposure light transmitted through the second semi-transmissive portion 122 and the exposure light transmitted through the light transmitting portion 124 is controlled such that the intensity of the exposure light of the semi-transmissive portion 122 is greater than or equal to the intensity of the exposure light. For example, the phase difference between the exposure light transmitted through the second semi-transmissive portion 122 and the exposure light transmitted through the light transmitting portion 124 is controlled to 45. Within. By controlling the intensity of the exposure light irradiated to the positive resist film 4 in the boundary region corresponding to the region of the first semi-transmissive portion 122 and the region corresponding to the light transmitting portion 124 in this manner, the boundary region can be suppressed. The resist residue I47633.doc 201104353 is left, and the unevenness which is not required for the step shape of the resist pattern 4p can be formed. Further, in the multi-mode mask of the present embodiment, the light intensity formed by the interference between the exposure light transmitted through the second semi-transmissive portion 123 and the exposure light transmitted through the light transmitting portion 24 becomes the transmission intensity. The phase difference between the exposure light transmitted through the second semi-transmissive portion 123 and the exposure light transmitted through the light transmitting portion 124 is controlled so that the light intensity of the exposure light of the semi-transmissive portion 123 is equal to or higher. For example, the phase difference between the exposure light transmitted through the second semi-transmissive portion 123 and the exposure light transmitted through the light transmitting portion ι 24 is controlled to 45. Within. By controlling the light intensity of the exposure light irradiated to the positive resist film 4 in the boundary region corresponding to the region of the second semi-transmissive portion 123 and the region corresponding to the light transmitting portion 124 in this manner, the boundary can be suppressed. The resist residue in the region 'may not form the unevenness which is not required for the step shape of the resist pattern 4p. Further, the phase and the light transmittance of the exposure light transmitted through the second semi-transmissive portion 122 in the above-mentioned 'the middle semi-transmissive film 111 can be made from the material and film thickness of the first semi-transmissive film 111 and the material of the second semi-transmissive film 112 and Set by the combination of film thicknesses. Further, the phase of the exposure light transmitted through the second semi-transmissive portion 123 and the light transmittance can be set by the material and film thickness of the second semi-transmissive film 112. (2) Method of manufacturing multi-mode mask Next, a method of manufacturing the multi-mode mask 100 of the present embodiment will be described with reference to Fig. 2 . (Photomask Substrate Preparation Step) First, as illustrated in FIG. 2( a ), the first semi-transmissive film 1 Π, the second semi-transmissive film 112 , and the light shielding film ι are sequentially formed on the transparent substrate 110 , and A mask substrate 10b having a first resist film 131 is formed on the uppermost layer. Further, the first resist film 131 may be formed of a positive photoresist material or a negative photoresist material. In the description of 147633.doc 201104353, the first resist film 13 1 is formed of a positive resist material. The first resist film 131 can be formed, for example, by a method such as spin coating or slit coating. (1st patterning step) Then, the first resist film 131 is exposed by drawing exposure by a laser plotter or the like, and the developer is supplied to the first resist film 13 by a method such as a spray method, and developed. The first resist pattern 丨3ip that covers the formation predetermined region of the light shielding portion 121 and the predetermined formation region of the first semi-light transmission portion 122 is formed. A state in which the first resist pattern 13 1 p is formed is exemplified in FIG. 2(b). Then, the light-shielding film 11 is inscribed with the first resist pattern 1 3 1 p formed as a mask, and the second resist pattern 丨3 lp or the remaining light-shielding film u 3 is used as a mask to etch the second The semi-transmissive film 112 partially exposes the first semi-transmissive film π!. Then, the first resist pattern 13 lp is peeled off or the like and removed. Further, when the second light-transmissive film Π2 is etched by using the remaining light-shielding film 113 as a mask, the first resist pattern 13 lp may be peeled off beforehand. The etching of the light-shielding film 11 3 can be performed by supplying the etching liquid for chromium to the light-shielding film 113 by a method such as a spraying method. The etching of the second semi-transmissive film 112 can be performed by supplying a fluorine (F)-based money engraving (or a contact gas) to the second semi-transmissive film 112. The first resist pattern 13 lp can be peeled off by bringing the peeling liquid into contact with the first resist pattern 131p. Then, a second resist film 132 covering the remaining light-shielding film 113 and the exposed first semi-transmissive film 111 is formed. The second resist film 132 may be formed of a positive photoresist material or a negative photoresist material. In the following description, the second resist film 13 2 is formed of a positive resist material. The second resist film 132 can be formed, for example, by a method such as spin coating or slit coating. The state in which the second resist film 132 is formed is exemplified in Fig. 2(c) of 147633.doc 201104353. (Second Patterning Step) Newly, the second resist film 32 is exposed to light by a laser scanner or the like, and the developer is supplied to the second resist film 132 by a method such as a spray method. The predetermined area for forming the light shielding portion 12i and the second half light transmission are respectively covered.第]] forms a second resist pattern η# of a predetermined region. A state in which the second resist pattern 132{) is formed is exemplified in FIG. 2(d). Then, the light shielding film 113 and the first semi-transmissive film 111 are etched by using the formed second resist pattern 132p as a mask, and the second semi-transmissive film 112 and the transparent substrate 110 are partially exposed. The light shielding film 113 and the third layer The etching of the semi-transmissive film lu can be performed by supplying the etching solution for chromium to the light-shielding film 113 and the first semi-transmissive film by a method such as a spray method. Then, the second resist pattern 132p is peeled off, etc. In addition, the second resist pattern 132p can be peeled off by contacting the second resist pattern 132p with the second resist pattern 132p. A partial cross-sectional view of the multi-mode mask 100 including the light-shielding portion 121, the light-transmitting portion 124, the first semi-transmissive portion 122, and the second semi-transmissive portion of the substrate 110 is shown in FIG. Further, when the mask base 1b is prepared, the phase and light transmittance of the exposure light transmitted through the second semi-transmissive portion 122 and the phase of the exposure light transmitted through the second semi-transmissive portion 123 are obtained. The material and film thickness of the first semi-transmissive film 111 and the second half are selected such that the light transmittance satisfies the above conditions. Material and film thickness of the light film 112. (3) Manufacturing method of the TFT substrate 147633.doc •17· 201104353 The TFT substrate of the wafer transfer step using the multi-mode mask 100 is included on the side of the substrate. The manufacturing method will be described. By using a multi-mode mask 1 which is a four-tone mask, the TFT substrate can be manufactured through the following first to third mask processes. (First mask process) First, As shown in Fig. 7(a), a gate electrode film 20 which is a metal film is formed on the glass substrate 10. The gate electrode film 20 is formed, for example, by sputtering or CVD (Chemical Vap0I· After forming a metal thin film (not shown) on the glass substrate 10 by a method such as Deposition, chemical vapor deposition, a photolithography is performed using a binary (two-tone) mask having a transfer pattern including a light shielding portion and a light transmitting portion. a step of patterning the metal thin film. Then, as shown in FIG. 7(b), a gate insulating film 2 is sequentially formed on the exposed surface of the gate electrode film 2 and the exposed surface of the glass substrate 1 Crystal film 22, ohmic contact film 23, metal film 24 The gate insulating film 21, the hydrogenated amorphous germanium film 22, and the ohmic contact film 23 can be formed, for example, by CVD, and the metal thin film 24 can be formed, for example, by sputtering. (Second mask process) Next, metal A positive resist film (not shown) is formed on the film 24 with a uniform thickness. Then, a multi-mode (two-tone) mask including a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion is used, and the above-mentioned positive resist is used. The film is irradiated with exposure light, and the positive resist film is developed and patterned. As a result, as shown in FIG. 7(c), a resist pattern 31 is formed in such a manner as to partially cover the gate electrode film. Above the 20, and in the region corresponding to the light-shielding portion, the film thickness of the positive-type resist film is thicker, and the film thickness corresponding to the above-mentioned 147633.doc 201104353 type resist agent is thinner in the region corresponding to the semi-transmissive portion. In the region of the gate electrode film 20, the region in the light portion is not provided (the metal resist is not provided). The positive resist film is removed, and the surface of the film is partially exposed. The genus=agent pattern 31 is used as a mask, and the η/, 24, ohmic contact film 23, and hydrogenated amorphous smashed film 22 are sequentially knitted and patterned on the surface side: the surface of the smectic insulating film is partially exposed. The latter case is not shown in Fig. 7(c). After the block, the resistant pattern (4) is ashed (reduced film) and the thin film is removed in the region of the semi-transmissive portion. The metal film is surfaced by the surface. Then, from the surface side, the newly exposed metal thin film I ohmic contact film 23 is removed in order. The state after the completion of the money is illustrated in Fig. 7(d). And 4, the resist pattern 3 i is peeled off or the like to be removed to cover the exposed surface of the tantalum, tantalum film 21, tantalum amorphous tantalum film 22, ohmic contact film, and metal film 24 For example, a blunt film (surface-preserving yttrium film) 41 containing nitrogen cut (SiNx) or the like is included. The passivation film 4 j can be formed, for example, by c. A state in which the passivation film 41 is formed is exemplified in Fig. 7(e). (Third mask process) Then, a positive resist film (not shown) is formed on the passivation film 41 formed so that the surface becomes a flat surface. Then, the light-shielding portion 121 and the light-transmitting portion are used. P 124, the first semi-transmissive portion 122, and the second semi-transmissive portion 123 of the multi-s-circular (four-tone) mask 本 of the present embodiment, the positive resist film is irradiated with exposure light, and The above positive resist film is developed and patterned. Here, for example, a four-tone mask having the pattern shown in Fig. 8 can be applied. As a result, as shown in FIG. 7(g) of 147633.doc -19-201104353, a resist pattern 32 is formed in such a manner that the light shielding portion 121, the first semi-transmissive portion 122, and the second semi-transparent light are formed. In the region corresponding to each of the portions 123, the film thickness of the positive resist film is sequentially reduced. Further, in the region corresponding to the light transmitting portion 124 (as will be described later, the region where the contact hole 41h is formed by etching the passivation film 41), the above positive resist film is removed, and the surface of the passivation film 41 is partially exposed. . Here, the cross-sectional shape of the pattern of the four-tone mask used is as shown in Fig. 7 (f), and the top view thereof is shown in Fig. 8. Further, since there is a step on the surface of the object to be processed, even if the surface of the resist layer to be applied is flat, the thickness of the resist film varies depending on the region. Therefore, as shown in Fig. 7 (f), The semi-transmissive portion 122 and the second semi-transmissive portion 123 measure the resist film thickness of each region before pattern formation so that the exposure light of each region is formed so that the thickness of the resist film after pattern formation reaches a desired value. The amount of transmitted light is different from each other, thereby making it correspond to the first semi-transmissive portion! The film thickness of the resist pattern 3 2 of 22 and the film thickness of the resist pattern 32 corresponding to the second semi-transmissive portion 123 are formed to be uniform. Thereby, during the ashing of the subsequent step, it is possible to prevent the resist from remaining or excessive etching of the layer to be processed. Then, the resist pattern 3 2 is used as a mask, and the exposed passivation film 4 is removed to be removed to form a contact hole 41 h. A state in which the contact hole 4丨h is formed is exemplified in Fig. 7(g). Then, the resist pattern 32 is ashed to remove a region having a small film thickness (corresponding to the regions of the first semi-transmissive portion 122 and the second semi-transmissive portion 123), and the surface of the purification film 41 of the substrate is partially exposed. . The state in which the resist pattern 32 is ashed is exemplified in Fig. 7(h). Then, for example, on the inner wall surface of the formed contact hole 4 lh and the surface of the exposed 147633.doc -20- 201104353 passivation film 41, for example, including IT0 (Indium Tin 〇xide, indium tin oxide) or IZ 〇 ( Indium Zinc Oxide, a transparent conductive film 51 of indium zinc oxide. Further, the transparent conductive film 51 is also formed on the surface of the resist pattern 32. A state in which the transparent conductive film 51 is formed is exemplified in Fig. 7(i). Then, the resist pattern 32 is peeled off or removed (lifted) to be removed, and the TFT substrate of the present embodiment is produced. The state in which the resist pattern 32 is removed is exemplified in Fig. 7(j). For example, as described above, if the phase difference between the exposure light transmitted through the j-th semi-transmissive portion 122 and the exposure light transmitted through the second semi-transmissive portion 123 is too large, it will be on the transfer target of the boundary portion. The convex portion where the resist is generated remains even if the ashing resist is applied. The transparent conductive film 5 1 of the next step is formed on the residual resist, and the transparent conductive film is removed together with the resist in the subsequent step of removal. TFTs manufactured through such a process cannot perform normal operations. According to the present embodiment, the phase difference between the exposure light transmitted through the second semi-transmissive portion 122 and the exposure light transmitted through the second semi-transmissive portion 123 is not less than that, and is applied to the transfer target at the boundary portion. The convex portion of the resist is not generated, and the residue of the resist after the ashing is suppressed. (4) Effects of the present embodiment According to the present embodiment, one or a plurality of effects described below can be exhibited. In the multi-tone mask 100 of the present embodiment, α causes the light intensity formed by the interference between the exposure light transmitted through the i-th semi-transmissive portion 122 and the exposure light transmitted through the second semi-transmissive portion 123 to become the second half. The phase difference between the exposure light transmitted through the first semi-transmissive portion 与22 and the exposure light transmitted through the second semi-transmissive portion 123 is controlled so that the light intensity of the exposure light of the light transmitting portion 122 is equal to or higher. The exposure to the positive resist film 4 in the boundary region corresponding to the region of the first semi-transmissive portion 122 and the region corresponding to the second semi-transmissive portion 123 is controlled by the method of 147633.doc 201104353. The intensity of the light suppresses the residue of the resist on the transfer target in the boundary region, does not form the unevenness which is not required for the step shape of the resist pattern formed on the transfer body, and controls the step shape more. fine. Further, in the multi-tone mask 100 of the present embodiment, the light intensity formed by the interference between the exposure light transmitted through the first semi-transmissive portion 122 and the exposure light transmitted through the light transmitting portion 124 is transmitted through the second half. The light intensity of the exposure light of the light portion 122 is equal to or greater than the phase difference between the exposure light transmitted through the second semi-transmissive portion 122 and the exposure light transmitted through the light transmitting portion 124. By controlling the intensity of the exposure light irradiated to the positive resist film 4 in the boundary region corresponding to the region of the first semi-transmissive portion 122 and the region corresponding to the light transmitting portion 124 in this manner, the boundary region can be suppressed. The resist on the transferred body remains, and the unevenness which is not required for the step shape of the resist pattern formed on the transfer body is not formed, and the step shape is controlled more finely. Further, in the multi-mode mask 100 of the present embodiment, the light intensity formed by the interference between the exposure light transmitted through the second semi-transmissive portion 丨23 and the exposure light transmitted through the light transmitting portion 124 becomes the second transmission. The phase difference between the exposure light transmitted through the second semi-transmissive portion 123 and the exposure light transmitted through the light transmitting portion 124 is controlled so that the intensity of the exposure light of the semi-transmissive portion 123 is equal to or higher. By controlling the light intensity of the exposure light irradiated to the positive resist film 4 in the boundary region corresponding to the region of the second semi-transmissive portion 123 and the region corresponding to the light transmitting portion 124 in this manner, it is possible to suppress s The resist residue in the boundary region is such that the step shape of the resist pattern formed on the transferred body is close to a vertical profile such as a design value, and the step shape control 147633.doc • 22-201104353 is more fine. In the method of manufacturing a TFT substrate including the pattern transfer step using the multi-mode mask 100 of the present embodiment, the region corresponding to the first semi-transmissive portion 122 and the region corresponding to the second semi-transmissive portion 123 a boundary region, a boundary region corresponding to the region of the first semi-transmissive portion 122 and a region corresponding to the light transmitting portion 124, and a region corresponding to the second semi-transmissive portion 123 and a region corresponding to the light transmitting portion 124 In any of the boundary regions, the resist residue of the boundary region can be suppressed without forming irregularities which are not required for the step shape of the resist pattern 32. Thereby, the quality of a semiconductor device such as a TFT can be improved, and the manufacturing yield can be improved. For example, in the method for manufacturing a TFT substrate, it is possible to suppress the occurrence of the resist remaining in the contact hole 41h and the occurrence of the resist residue when the resist pattern 32 is ashed, to avoid the contact hole 41h caused by the resist residue. The contact is poor or the film of the transparent conductive film 51 is peeled off. &lt;Second Embodiment of the Invention&gt; Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. 3(a) is a partial cross-sectional view of the multi-mode mask 200 of the present embodiment, and FIG. 3(b) is a portion of the resist pattern 4p formed on the transfer target 1 by the multi-mode mask 200. Cross-sectional view Fig. 4 is a schematic view showing a flow of a manufacturing process of the multi-mode mask 200 of the present embodiment. (1) Configuration of Photomask The multi-mode mask 200 shown in FIG. 3(a) has a transfer pattern including masking exposure light when the multi-mode mask 200 is used (light transmittance is about 0%) The light-shielding portion 221; the transmittance is reduced to 20 to 50%, preferably 30 to 40%, and the first semi-transmissive portion 222 is about 147633.doc 23·201104353; the transmittance is reduced to 30 to 6.0%, preferably 40~50°/. The second semi-transmissive portion 223 on the left and right sides and the light transmissive portion 224 through which the exposure light is transmitted by about 1% is such that the transmittance of the i-th semi-transmissive portion 222 to the exposure light is smaller than the second semi-transmissive portion. The transmittance of the portion 223 to the exposure light. The light-shielding portion 221 is formed by sequentially laminating a semi-transmissive first semi-transmissive film 211, a light-shielding film 213, and a semi-transmissive second semi-transmissive film 212 on a transparent substrate 21 such as a glass substrate. The first semi-transmissive portion 222 is formed by patterning the first semi-transmissive film 211 formed on the transparent substrate 21A. The second semi-transmissive portion 223 is formed by forming the second semi-transmissive film 212 on the transparent substrate 210. The light transmitting portion 224 is formed by exposing the surface of the transparent substrate 210. The state in which the second semi-transmissive film 211 light-shielding film 213 and the second semi-transmissive film 2 1 2 are patterned will be described later. The transparent substrate 2 10 is configured in the same manner as in the above embodiment. The first semi-transmissive film 211 is formed of a material containing a metal material such as molybdenum (M〇) and bismuth (si), and includes, for example, MoSi, M〇Si2, MoSiN, MoSiON, MoSiCON, or the like. The first semi-transmissive film 211 is configured to be etched using a fluorine (F)-based etching liquid (or etching gas). In addition, the second semi-transmissive film 2 ι can function as an etch stop layer when the second semi-transmissive film 2 12 and the light-shielding film 2 13 are etched using the etching solution for chromium as described later. The light shielding film 213 substantially contains chromium (Cr). Further, when the surface layer of the light-shielding film 213 is a Cr compound (such as Cr0, CrC or CrN), the surface of the light-shielding film can be provided with a reflection suppressing function. The light shielding film 213 is configured to be etchable using the above etching solution for chromium. The second semi-transmissive film 212 contains a material containing a complex (for example, containing nitrogen H7633.doc • 24-201104353 chromium (CrN), chromium oxide (cr〇), chromium oxynitride (cr〇N), fluorine Chromium (CrF), etc. The second semi-transmissive film 212 is configured to be etched using the above-described chrome etching solution. In Fig. 3(b), the example is formed by a multi-tone mask 2 被. A partial cross-sectional view of the resist pattern 4p on the printed body 1. Even if the multi-mode mask 200 of the present embodiment is used, a film thickness can be formed on the transfer target 1 in a stepwise manner as in the above-described embodiment. Further, in the multi-mode mask 2 of the present embodiment, as in the above-described embodiment, the exposure light transmitted through the first semi-transmissive portion 222 and the second semi-transmissive portion 223 are transmitted. The light intensity formed by the interference of the exposure light is equal to or higher than the light intensity of the exposure light transmitted through the first semi-transmissive portion 222, and the exposure light transmitted through the first semi-transmissive portion 222 and the second semi-transmissive portion 223 are controlled. The phase difference of the exposure light is increased by the exposure light transmitted through the first semi-transmissive portion 222 and the transmitted light transmitting portion 224. The light intensity formed by the interference of the light and light is equal to or higher than the light intensity of the exposure light transmitted through the first semi-transmissive portion 222, and the exposure light transmitted through the first semi-transmissive portion 222 and the exposure light transmitted through the light transmitting portion 224 are controlled. In addition, the light intensity formed by the interference between the exposure light transmitted through the second semi-transmissive portion 223 and the exposure light transmitted through the light transmitting portion 224 becomes the light that is transmitted through the exposure light of the second semi-transmissive portion 223. The intensity difference between the exposure light transmitted through the second semi-transmissive portion 223 and the exposure light transmitted through the light transmitting portion 224 is controlled to be larger than the region corresponding to the first semi-transmissive portion 222, corresponding to the second The region of the semi-transmissive portion 223 corresponding to the region of the light transmitting portion 224 can suppress the residue of the resist in the vicinity of the boundary of the region without generating the unevenness which is not required for the step shape of the resist pattern 4p. Further, in the above, the phase of the exposure light transmitted through the first semi-transmissive portion 222 and the light transmittance can be set by the material and film thickness of the first semi-transmissive film 211. 'The phase of the exposure light transmitted through the second semi-transmissive portion 223 and the light transmittance can be borrowed The material of the second semi-transmissive film 212 and the film thickness are set. (2) Method of manufacturing the multi-tone mask Next, a method of manufacturing the multi-mode mask 200 of the present embodiment will be described with reference to FIG. 4 . (Photomask Substrate Preparation Step) First, as illustrated in FIG. 4(a), the first semi-transmissive film 211 and the light shielding film 213 are sequentially laminated on the transparent substrate 210, and the first resistance is formed on the uppermost layer. The mask substrate 2〇〇b of the film 23 1 . Further, the first resist film 23 1 may be formed of a positive photoresist material or a negative photoresist material. In the following description, the first resist film 23 1 is Formed by a positive photoresist material. The first resist film 23 can be formed, for example, by a method such as spin coating or slit coating. (1st patterning step) Then, the first resist film 231 is subjected to drawing exposure using a laser plotter or the like, and the developer is supplied to the first resist film 231 by a method such as a spray method to develop the film. The first resist pattern 23lp is formed to cover the predetermined region of the light shielding portion 22 and the predetermined region of the first semi-light transmission portion 222. A state in which the first resist pattern 23 1 p is formed is exemplified in FIG. 4( b ). Then, the light shielding film 213 is etched by using the formed first resist pattern 23 lp as a mask, and the first semi-transmissive film 211 is etched by using the first resist pattern 231] 3 or the remaining light shielding film 213 as a mask. The surface of the transparent substrate 21 is partially exposed. Then, the first resist pattern 231p is peeled off or the like and removed. 147633.doc -26- 201104353 Furthermore, when the second semi-transmissive film 211 is etched by using the remaining light-shielding film 213 as a mask, the first! The resist pattern 231p is peeled off beforehand. The etching of the light-shielding film 213 can be performed by supplying the etching liquid for chromium to the light-shielding film 213 by a method such as a spraying method. The etching of the semi-transmissive film 211 can be carried out by supplying a fluorine (F)-based remnant (or a gas-burning gas) to the second semi-transmissive film 2^2. For the first resist pattern 231p, the peeling liquid can be brought into contact with the first! The resist pattern 231p is peeled off. The state after the etching is completed is exemplified in Fig. 4(c). (Second semi-transmissive film forming step) Then, the second semi-transmissive film 212 is formed so as to cover the remaining light-shielding film 2丨3 and the exposed transparent substrate 210, respectively. The second semi-transmissive film 212 can be formed, for example, by sputtering. Thereafter, the second resist film 232 is formed so as to cover the formed second semi-transmissive film 212. The second resist film 232 may be formed of a positive resist material or a negative photoresist material. In the following description, the second resist film 232 is formed of a positive resist material. The second resist film 232 can be formed, for example, by a method such as spin coating or slit coating. A state in which the second semi-transmissive film 212 and the second resist film 232 are formed is exemplified in FIG. 4(d). (Second patterning step) Then, the second resist film 232 is subjected to drawing exposure using a laser plotter or the like, and the developer is supplied to the second resist film 232 by a method such as a spray method to develop the film. The second resist pattern 232p is formed to cover the predetermined area of the light shielding portion 22 and the predetermined area of the second semi-light transmission portion 223. A state in which the second resist pattern 232p is formed is exemplified in FIG. 4(e). Then, the second light-receiving film 212 and the light-shielding film 213 are etched by using the formed second resist pattern 232p as a mask to partially expose the first semi-transmissive film 211, and The second resist pattern 232p is formed as a mask to etch the second semi-transmissive film 212, and the transparent substrate 21 is partially exposed. The etching of the light-shielding film 213 and the second semi-transmissive film 212 can be performed by supplying the etching solution for chromium to the light-shielding film 213 and the second semi-transmissive film 212 by a method such as a spraying method. Further, at this time, the first semi-transmissive film 211 functions as a surname layer. Then, the second resist pattern 232p is peeled off or the like to be removed, and the multi-mode mask 200 of the present embodiment is completed. The second resist pattern 232p can be peeled off by bringing the peeling liquid into contact with the second resist pattern 232p. A partial cross-sectional view of a multi-tone mask 200 in which a transfer pattern including a light-shielding portion 22, a light-transmitting portion 224, a first semi-transmissive portion 222, and a second semi-transmissive portion 223 is formed on a transparent substrate 210 is shown in the figure. 4(f). Further, when the mask base 200b is prepared, the phase and light transmittance of the exposure light transmitted through the first semi-transmissive portion 222, and the phase and light transmittance of the exposure light transmitted through the second semi-transmissive portion 223 satisfy the above conditions. In this manner, the material and film thickness of the first semi-transmissive film 211 and the material and film thickness of the second semi-transmissive film 212 are selected. Even if the multi-mode mask 200 of the present embodiment is used, the method of manufacturing the above TFT substrate can be carried out. Further, even with the multi-mode mask 200 of the present embodiment, the same effects as those described above are exerted. &lt;Third Embodiment of the Present Invention&gt; Hereinafter, a third embodiment of the present invention will be described with reference to the drawings. Figure 5 (a) is a partial cross-sectional view of the multi-mode mask 3 of the present embodiment, and Figure 147633.doc • 28-201104353 5(b) is formed on the object to be transferred by the multi-mode mask 300. A partial cross-sectional view of the resist pattern on the first embodiment is a schematic view showing the flow of the manufacturing process of the multi-mode mask of the present embodiment. (1) Configuration of Photomask The multi-mode mask 300 shown in Fig. 5 (a) has a transfer pattern including masking exposure light when the multi-mode mask 300 is used (light transmittance is about 0) The light-shielding portion 321 of %); the first semi-transmissive portion 322 having a transmittance of 20 to 50%, preferably about 30 to 40%; and the transmittance is reduced to 30 to 60%, preferably 4 to 5 The second semi-transmissive portion 323 of about 〇% and the light-transmitting portion 324 for transmitting the exposure light by about 100%. In this manner, the transmittance of the first semi-transmissive portion 322 to the exposure light is configured to be smaller than the transmittance of the second semi-transmissive portion 323 to the exposure light. The light shielding portion 321 is formed by laminating a light shielding film 313, a semitranslucent first semi-transmissive film 311, and a semi-transmissive second semi-transmissive film 312 on a transparent substrate 310 such as a glass substrate. The first semi-transmissive portion 3 22 is formed by laminating the first semi-transmissive film 311 and the second semi-transmissive film 312 on the transparent substrate 310. The second semi-transmissive portion 323 is formed by forming the second semi-transmissive film 312 on the transparent substrate 310. The light transmitting portion 324 is formed by exposing the surface of the transparent substrate 310. The state in which the first semi-transmissive film 311, the light shielding film 313, and the second semi-transmissive film 312 are patterned will be described later. The transparent substrate 310 is configured in the same manner as in the above embodiment. The first semi-transmissive film 311 includes a material containing a metal material such as molybdenum (Mo) and bismuth (Si), and includes, for example, MoSi, MoSi2, MoSiN, MoSiON, MoSiCON, or the like. The first semi-transmissive film 311 is configured to be surnamed by using the fluorine (F) strontium (or etched gas). In addition, the first semi-transmissive film 3 11 I47633.doc -29· 201104353 is formed of a material containing chromium (Cr), and may contain, for example, chromium nitride ((iv), chromium oxide (CrO), chromium oxynitride (Cr0N). ), chromium fluoride (CrF), etc. In this case, the 'the semi-transmissive film 3 (10) is configured to be etched using the above-mentioned chrome. The light-shielding film 313 is substantially formed of chromium (Cr) &amp; Further, in the surface layer of the light-shielding film 313, a Cr compound (such as Cr0, CrC, or CrN), the surface of the light-shielding film 313 can be provided with a reflection suppressing function. The light-shielding film 313 is configured to use the above-mentioned system. The second semi-transmissive film 312 contains a material containing chromium (c〇, for example, containing chromium nitride (CrN), chromium oxide (Cr0), chromium oxynitride (Cr〇N), chromium fluoride. (CrF), etc. The second semi-transmissive film 312 is configured to be etched using an etching solution for chromium. The second semi-transmissive film 3 1 2 includes a metal material such as molybdenum (Mo) and Si Xi (Si The material 'for example, may include M〇si, MoSiz, MoSiN, MoSiON, MoSiCON, etc. In this case, the second semi-transmissive film 312 is configured to be used as described above. (F) Etching is performed by an etching liquid (or an etching gas). Fig. 5(b) is a partial cross-sectional view showing a resist pattern 4p formed on the transfer target 1 by a multi-tone mask 3?. Even in the case of using the multi-tone mask 300 of the present embodiment, the resist pattern 4p having a different thickness can be formed on the transfer target 1 in the same manner as in the above embodiment. In the photomask 300, as in the above-described embodiment, the light intensity formed by the interference between the exposure light transmitted through the i-th semi-transmissive portion 322 and the exposure light transmitted through the second semi-transmissive portion 323 is transmitted through the first half. The light intensity of the exposure light of the light transmitting portion 322 is equal to or greater than the phase difference between the exposure light transmitted through the first semi-transmissive portion 322 and the exposure light transmitted through the second semi-transmissive portion 3 23 by 147633.doc -30- 201104353. Further, the light intensity formed by the interference between the exposure light transmitted through the first semi-transmissive portion 322 and the exposure light transmitted through the light transmitting portion 324 becomes the light intensity of the exposure light transmitted through the first semi-transmissive portion 322. In a manner, the exposure light passing through the first semi-transmissive portion 322 and the light transmissive portion 324 are exposed. In addition, the light intensity formed by the interference between the exposure light transmitted through the second semi-transmissive portion 323 and the exposure light transmitted through the light transmitting portion 324 becomes the exposure through the second semi-transmissive portion 33. The phase difference between the exposure light transmitted through the second semi-transmissive portion 323 and the exposure light transmitted through the light transmitting portion 324 is controlled so as to correspond to the region corresponding to the first semi-transmissive portion 32, Any one of the region corresponding to the second semi-transmissive portion 323 and the region corresponding to the light-transmitting portion 324 can suppress the residue of the resist in the vicinity of the boundary of the region, and the step shape of the resist pattern 4p is not formed. Need bumps. Further, the phase and the light transmittance of the exposure light transmitted through the first semi-transmissive portion 322 are set by the material and film thickness of the first semi-transmissive film 311. Further, the phase of the exposure light transmitted through the second semi-transmissive portion 323 and the light transmittance are set by the material and film thickness of the second semi-transmissive film 312. (2) Method of Manufacturing Photomask Next, a method of manufacturing the multi-mode mask 300 of the present embodiment will be described with reference to Fig. 6 . (Photomask Substrate Preparation Step) First, as illustrated in FIG. 6(a), a photomask substrate 300b having a light-shielding film 313' formed on the transparent substrate 3 1 and a third resist film 331 is formed on the uppermost layer. . Further, the first resist film 33 1 may be formed of a positive resist material or a negative resist material. In the following description, the first resist film 33 1 is formed of a positive resist material 147633.doc 31 201104353. The first resist film 33 can be formed, for example, by a method such as spin coating or slit coating. (1st patterning step) Then, the first resist film 33 1 is exposed to light by a laser scanner or the like, and the developer is supplied to the first resist film 33 1 by a method such as a spray method to perform development. The j-th resist pattern 33 lp covering the predetermined area of the light shielding portion 321 is formed. A state in which the first resist pattern 33 lp is formed is exemplified in Fig. 6(b). Then, the mask film 313 is etched by using the formed i-th resist pattern 33 lp as a mask to partially expose the surface of the transparent substrate 31. Then, the fifth resist pattern 331p is peeled off or the like and removed. The etching of the light-shielding film 313 can be performed by supplying the above-described etching liquid to the light-shielding film 313 by a method such as a spraying method. The first "and agent pattern 33ip" can be peeled off by bringing the peeling liquid into contact with the first resist pattern 3 3 1 p. (Second patterning step) Then, the remaining light-shielding film 313 and the exposed transparent layer are respectively covered. The first semi-transmissive film 311 is formed as a substrate 3/0. The first semi-transmissive film 311 can be formed, for example, by subtraction. Then, the second semi-transmissive film 311 is formed to cover the second semi-transmissive film 311. The resist film 332. The second resist film 332 may be formed of a positive resist material; '' or negative lining P and a material. The following second resist film clasp is formed of a positive resist material. The resist film 332 can be formed, for example, by a method such as spin coating or slit coating. A state in which the 1st light-transmissive film 3 ι and the second resist film 332 are formed is exemplified in Fig. 6 (c). The second resist film 147633.doc •32· 201104353 332 is irradiated to the second resist film 332 by a method such as a spray method, and is developed by a laser scanner or the like to form a developing solution to form a light-shielding portion. a second resist pattern 332p forming a predetermined region and a predetermined region of the first semi-transmissive portion 322 is formed. The state of the second resist pattern 332p is exemplified in Fig. 6(d). Then, the ith semi-transmissive film 311 is etched by using the formed second resist pattern 332p as a mask to make the surface of the transparent substrate 3 The second resist pattern 33 2p is removed by peeling, etc. The etching of the first semi-transmissive film 311 can be performed by first supplying the fluorine (F)-based surname (or etching gas) to the first The semi-transmissive film 311 is formed. The second resist pattern 332p can be peeled off by bringing the peeling liquid into contact with the second resist pattern 332p. (Third patterning step) Then, the remaining third layer is covered. The second semi-transmissive film 312 is formed to form the semi-transmissive film 3 and the exposed transparent substrate 310. The second semi-transmissive film 312 can be formed by sputtering, for example, and then covered by the second half. The third resist film 333 is formed by the light transmissive film 3 12. The third resist film 333 may be formed of a positive resist material or a negative photoresist material. In the following description, the third resist film 33 is positive The third resist film 333 can be formed, for example, by spin coating or slit coating, etc. The second semi-transparent is formed. The state of 312 and the third resist film 333 is exemplified in Fig. 6(e). Then, the third resist film 333 is exposed by drawing exposure using a field plotter or the like, and the third resist is applied to the third resist by a method such as a spray method. The film is supplied with a developing solution and developed. A third resist circle is formed to form a predetermined region in which the light shielding portion 321 is formed, a predetermined region in which the first semi-transmissive portion 322 is formed, and a predetermined region in which the second semi-transmissive portion (2) is formed. 333p. A state in which the third resist pattern 147633.doc -33·201104353 case 333p is formed is illustrated in Fig. 6(f). Then, the second semi-transmissive film 312 is etched by using the formed third resist pattern 333p as a mask to partially expose the surface of the transparent substrate 310. The etching of the second semi-transmissive film 3 1 2 can be performed by supplying the chromium-based etching liquid to the second semi-transmissive film 312. Then, the third resist pattern 333p is peeled off or the like to be removed, and the manufacture of the multi-mode mask 300 of the present embodiment is completed. The third resist pattern 333p' can be peeled off by bringing the peeling liquid into contact with the third resist pattern 333p. A partial cross-sectional view of a multi-tone mask 300 in which a transfer pattern including a light-shielding portion 321 , a light-transmitting portion 324 , a first semi-transmissive portion 322 , and a second semi-transmissive portion 323 is formed on a transparent substrate 310 is illustrated in the drawing. 6 (g). Further, when the first semi-transmissive film 311 and the second semi-transmissive film 312 are formed, the phase and light transmittance of the exposure light transmitted through the first semi-transmissive portion 322 are transmitted through the second semi-transmissive portion 323. The material and thickness of the first semi-transmissive film 311 and the material and film thickness of the second semi-transmissive film 312 are selected such that the phase of the exposure light and the light transmittance satisfy the above conditions. Even if the multi-mode mask 300 of the present embodiment is used, the method of manufacturing the above TFT substrate can be carried out. Further, even with the multi-mode mask 300 of the present embodiment, the same effects as those described above are exerted. <Other Embodiments of the present invention> The above-described embodiments of the present invention have been specifically described. The present invention is not limited to the above-described embodiments. The present invention can be variously modified without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1(a) is a partial cross-sectional view (schematic diagram) of a multi-mode mask according to a first embodiment of the present invention, and FIG. 1(b) is a multi-tone type by using the same. Partial cross-sectional view of the resist pattern formed on the transfer target by the pattern transfer process of the mask; and FIGS. 2(a) to 2(e) are diagrams showing the flow of the manufacturing steps of the multi-mode mask according to the first embodiment of the present invention. Figure 3 (a) is a partial plan view (schematic diagram) of the multi-mode mask of the second embodiment of the present invention. Figure 3 (b) is a pattern transfer step by using the multi-mode mask. A partial cross-sectional view (schematic diagram) of a resist pattern formed on a transfer target; and FIGS. 4(a)-(f) are schematic views showing a flow of a manufacturing process of the multi-mode mask according to the second embodiment of the present invention; 5(a) is a partial cross-sectional view (schematic diagram) of a multi-mode mask according to a third embodiment of the present invention, and FIG. 5(b) is formed on the object to be transferred by a pattern transfer step using the multi-mode mask. Partial cross-sectional view (schematic diagram) of the resist pattern; FIGS. 6(a)-(g) illustrate the manufacture of the multi-mode mask of the third embodiment of the present invention FIG. 7(a)-(j) are flowcharts showing a method of manufacturing a TFT substrate using a pattern transfer step of the multi-tone mask of the third to third embodiments of the present invention; 8 is a plan enlarged view of the multi-tone mask of the first embodiment of the present invention. [Description of main component symbols] Multi-tone mask reticle base transparent substrate 1st semi-transmissive film 2nd semi-transparent film 100 ' 200 ' 300 100b , 200b , 300b 110 , 210 , 310 111 , 211 , 311 112 ' 212 ' 312 147633.doc 35- 201104353 113 , 213 , 121 , 221 , 122 ' 222 ' 123 , 223 , 124 ' 224 , 131p , 231p 132p , 232p 333p 313 light shielding film 321 light shielding portion 322 first semi-light transmitting portion 323 2 semi-transmissive portion 324 light transmitting portion, 331p first resist pattern, 332p second resist pattern third resist pattern 147633.doc -36-

Claims (1)

201104353 七、申請專利範圍： 1. 一種多調式光罩，.其特徵在於··其係於透明基板上形成 有包含遮光部、透光部、第丨半透光部及第2半透光部之 轉印圖案者，並且 上述第1半透光部對曝光光之透過率小於上述第2半透 光部對上述曝光光之透過率，且 以使由透過上述第丨半透光部之上述曝光光與透過上 述第2半透光部之上述曝光光之干涉所形成的光強度成 為透過上述第1半透光部之上述曝光光的光強度以上之 方式’控制透過上述第1半透光部之上述曝光光與透過 上述第2半透光部之上述曝光光的相位差。 2. 如請求項1之多調式光罩，其中以使藉由透過上述第1半 透光部之上述曝光光與透過上述透光部之上述曝光光之 干涉所形成的光強度成為透過上述第1半透光部之上述 曝光光的光強度以上之方式，控制透過上述第丨半透光 部之上述曝光光與透過上述透光部之上述曝光光的相位 差。 3. 如清求項1之多調式光罩，其中以使藉由透過上述第2半 透光部之上述曝光光與透過上述透光部之上述曝光光之 干涉所形成的光強度成為透過上述第2半透光部之上述 曝光光的光強度以上之方式，控制透過上述第2半透光 部之上述曝光光與透過上述透光部之上述曝光光的相位 差。 4. 如明求項1至3中任一項之多調式光罩，其中上述第1半 I47633.doc 201104353 透光部係於上述透明基板上積層第丨半透光膜及第2半透 光膜而成， 上述第2半透光部係於上述透明基板上形成上述第1半 透光膜而成。 5.如請求項1至3中任一項之多調式光罩，其中上述第【半 透光部係於上述透明基板上形成第1半透光膜而成， 上述第2半透光部係於上述透明基板上形成第2半透光 膜而成。 6_如請求項5之多調式光罩，其中上述第丨半透光膜與上述 第2半透光膜係包含互不相同之材料，且 上述第1半透光膜對上述曝光光之透過率小於上述第2 半透光膜對上述曝光光之透過率。 7. 如請求項丨至3中任一項之多調式光罩’其中上述第1半 透光部係於上述透明基板上積層第丨半透光膜及第2半透 光膜而成， 上述第2半透光部係於上述透明基板上形成上述第之半 透光膜而成。 8. 如請求項1至3中任一項之多調式光罩，其中上述轉印圖 案為液晶顯示裝置製造用之圖案。 9· 一種多調式光罩之製造方法，其特徵在於：其係於透明 基板上形成包含遮光部、透光部、第丨半透光部及第2半 透光部之轉印圖案者，且其包括以下步驟： 準備光罩基底，其係於上述透明基板上依序積層有第 1半透光膜、第2半透光膜及遮光膜，且上述第丨半透光 147633.doc 201104353 膜及上述第2半透光膜對彼此之蝕刻具有耐性者； 於上述遮光膜上，形成分別覆蓋上述遮光部之形成預 疋區域及上述第1半透光部之形成預定區域的第1阻劑圖 案； 以上述第1阻劑圖案作為遮罩而蝕刻上述遮光膜後， 蝕刻上述第2半透光膜，並去除上述第丨阻劑圖案； 形成分別覆蓋上述遮光部之形成預定區域及上述第2 半透光部之形成預定區域的第2阻劑圖案；及 以上述第2阻劑圖案作為遮罩而分別蝕刻上述遮光膜 及上述第1半透光膜後，去除上述第2阻劑圖案，形成上 述遮光部、上述透光部、上述第1半it光部及上述第2半 透光部；且 以控制透過上述第丨半透光部之上述曝光光與透過上 述第2半透光部之上述曝光光的相位差，而使由透過上 述第1半透光部之曝光光與透過上述第2半透光部之上述 曝光光之干涉所形成的光強度成為透過上述第丨半透光 部之上述曝光光的光強度以上之方式，選擇上述第工半 透光膜及上述第2半透光膜之材質及膜厚。 10. -種多調式光罩之製造方法’其特徵在於：其係於透明 基板上形成包含遮光部、透光部、第i半透光部及第2半 透光部之轉印圖案者，且其包括以下步驟·· 準備光罩基底，其係於上述透明基板上依序積層有第 1半透光膜及遮光膜，且上述第丨半透光膜及上述遮光膜 對彼此之餘刻具有耐性者； 147633.doc 201104353 於上述遮光膜上，形成分別覆蓋上述遮光部之形成預 定區域及上述第1半透光部之形成預定區域的第〖阻劑圖 案； 以上述第1阻劑圖案作為遮罩而蝕刻上述遮光膜後， 鼓刻上述第1半透光膜，並去除上述第1阻劑圖案； 於上述透明基板上及上述遮光膜上形成第2半透光 膜； 於上述第2半透光膜上，形成分別覆蓋上述遮光部之 形成預定區域及上述第2半透光部之形成預定區域的第2 阻劑圖案；及 以上述第2阻劑圖案作為遮罩而蝕刻上述第2半透光膜 及上述遮光膜後，去除上述第2阻劑圖案，形成上述遮 光部、上述透光部、上述第丨半透光部及上述第2半透光 部；且 以控制透過上述第1半透光部之上述曝光光與透過上 述第2半透光部之上述曝光光的相位差而使由透過上 述第1半透光部之曝光光與透過上述第2半透光部之上述 曝光光之干涉所形成的光強度成為透過上述第1半透光 部之上述曝光光的光強度以上之方式，選擇上述第！半 透光膜及上述第2半透光膜之材質及膜厚。 11. -種多調式光罩之製造方法，其特徵在於：其係於透明 基板上形成包含遮光部、透光部、第i半透光部及第2半 透光部之轉印圖案者，且其包括以下步驟： 準備光罩基底，其係於上述透明基板上形成有遮光膜 147633.doc 201104353 者； 於上述遮光膜上，形成療装L 成覆蓋上述遮光部之形成預定區 域之第1阻劑圖案； 而蝕刻上述遮光膜後 以上述第1阻劑圖案作為遮罩 去除上述第1阻劑圖案； 於上述透明基板上及上述遮光膜上形成第1半透光 膜； 於上述第1半透光膜上，形成分別覆蓋上述遮光部之 形成預^區域及上述第1半透光部之形成預定區域的第2 阻劑圖案； 乂上述第2阻劑圖案作為遮罩而飯刻上述第！半透光膜 後’去除上述第2阻劑圖案； · 於上述透明基板上及上述第1半透光膜上形成第2半透 光膜； 於上述第2半透光膜上，形成分別覆蓋上述遮光部之 形成預定區域、上述第丨半透光部之形成預定區域以及 上述第2半透光部之形成預定區域的第3阻劑圖案；及 以上述第3阻劑圖案作為遮罩而叙刻上述第2半透光膜 後，去除上述第3阻劑圖案，形成上述遮光部、上述透 光部、上述第1半透光部及上述第2半透光部；且 以控制透過上述第丨半透光部之上述曝光光與透過上 述第2半透光部之上述曝光光的相位差而使由透過上 述第1半透光部之曝光光與透過上述第2半透光部之上述 曝光光之干涉所形成的光強度成為透過上述第丨半透光 147633.doc 201104353 部之上述曝光光的光強度以上之方式，選擇上述第1半 透光膜及上述第2半透光臈之材質及膜厚。 12. 一種圖案轉印方法’其特徵在於：其係經由於透明基板 上形成有包含遮光部、透光部、第丨半透光部及第2半透 光部之轉印圖案的多調式光罩，對被轉印體上所形成之 阻劑膜照射曝光光，而於上述被轉印體上形成多調式之 阻劑圖案者； 上述第1半透光部對上述曝光光之透過率小於上述第2 半透光部對上述曝光光之透過率，且 以使由透過上述第1半透光部之上述曝光光與透過上 述第2半透光部之上述曝光光之干涉所形成的光強度成 為透過上述第1半透光部之上述曝光光的光強度以上之 方式，控制透過上述第1半透光部之上述曝光光與透過 上述第2半透光部之上述曝光光的相位差。 13. 如請求項12之圖案轉印方法，其中以使由透過上述第！ 半透光部之上述曝光光與透過上述透光部之上述曝光光 之干涉所形成的光強度成為透過上述第丨半透光部之上 述曝光光的光強度以上之方式，控制透過上述第丨半透 光部之上述曝光光與透過上述透光部之上述曝光光的相 位差。 14. 如請求項12或13之圖案轉印方法，其中以使由透過上述 第2半透光部之上述曝光光與透過上述透光部之上述曝 光光之干涉所形成的光強度成為透過上述第2半透光部 之上述曝光光的光強度以上之方式，控制透過上述第2 147633.doc 201104353 半透光部之上述曝光光與透過上述透光部之上述曝光光 的相位差。 147633.doc201104353 VII. Patent application scope: 1. A multi-mode mask, characterized in that it is formed on a transparent substrate and comprises a light shielding portion, a light transmitting portion, a second semi-transmissive portion and a second semi-transmissive portion. In the transfer pattern, the transmittance of the first semi-transmissive portion to the exposure light is smaller than the transmittance of the second semi-transmissive portion to the exposure light, and the above-described transmission through the first semi-transmissive portion The light intensity formed by the interference between the exposure light and the exposure light transmitted through the second semi-transmissive portion is equal to or higher than the light intensity of the exposure light transmitted through the first semi-transmissive portion, and is controlled to pass through the first semi-transmissive light. The phase difference between the exposure light of the portion and the exposure light transmitted through the second semi-transmissive portion. 2. The multi-mode mask of claim 1, wherein the light intensity formed by the interference between the exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the light transmitting portion is transmitted through the first The phase difference between the exposure light transmitted through the second semi-transmissive portion and the exposure light transmitted through the light-transmitting portion is controlled such that the light intensity of the exposure light of the semi-transmissive portion is equal to or higher than that. 3. The multi-modulation mask of claim 1, wherein the light intensity formed by the interference between the exposure light transmitted through the second semi-transmissive portion and the exposure light transmitted through the light transmitting portion is transmitted through The phase difference between the exposure light transmitted through the second semi-transmissive portion and the exposure light transmitted through the light-transmitting portion is controlled such that the light intensity of the exposure light of the second semi-transmissive portion is equal to or higher. 4. The multi-tone mask of any one of clauses 1 to 3, wherein the first half of the I47633.doc 201104353 light transmitting portion is formed on the transparent substrate to form a second semi-transparent film and a second semi-transparent light. The second semi-transmissive portion is formed by forming the first semi-transmissive film on the transparent substrate. 5. The multi-tone mask according to any one of claims 1 to 3, wherein the first semi-transmissive portion is formed by forming a first semi-transmissive film on the transparent substrate, and the second semi-transmissive portion is A second semi-transmissive film is formed on the transparent substrate. The multi-tone mask of claim 5, wherein the second semi-transmissive film and the second semi-transmissive film comprise mutually different materials, and the first semi-transmissive film transmits the exposure light. The rate is smaller than the transmittance of the second semi-transmissive film to the exposure light. 7. The multi-mode mask of any one of the preceding claims, wherein the first semi-transmissive portion is formed by laminating a semi-transparent film and a second semi-transmissive film on the transparent substrate, The second semi-transmissive portion is formed by forming the first semi-transmissive film on the transparent substrate. 8. The multi-mode mask of any one of claims 1 to 3, wherein the transfer pattern is a pattern for manufacturing a liquid crystal display device. 9. A method of manufacturing a multi-mode mask, characterized in that a transfer pattern including a light shielding portion, a light transmitting portion, a second semi-transmissive portion, and a second semi-transmissive portion is formed on a transparent substrate, and The method includes the following steps: preparing a photomask substrate, wherein the first semi-transparent film, the second semi-transparent film, and the light shielding film are sequentially laminated on the transparent substrate, and the first semi-transparent light is 147633.doc 201104353 film And the first semi-transmissive film is resistant to etching with respect to each other; and the first resist is formed on the light-shielding film to form a predetermined region in which the pre-turned region and the first semi-transmissive portion are formed to cover the light-shielding portion a pattern; the second semi-transmissive film is etched by using the first resist pattern as a mask, and the second semi-transmissive film is etched to remove the first resist pattern; and a predetermined region and a portion for forming the light-shielding portion are formed 2 forming a second resist pattern in a predetermined region of the semi-transmissive portion; and etching the light-shielding film and the first semi-transmissive film by using the second resist pattern as a mask, and removing the second resist pattern Forming a light shielding portion, the light transmitting portion, the first half light portion, and the second semi-light transmitting portion; and controlling the exposure light transmitted through the second semi-transmissive portion and transmitting through the second semi-transmissive portion The phase difference of the exposure light causes the light intensity formed by the interference between the exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the second semi-transmissive portion to pass through the first semi-transmissive portion The material and film thickness of the first semi-transmissive film and the second semi-transmissive film are selected such that the light intensity of the exposure light is equal to or higher than the light intensity. 10. A method of manufacturing a multi-mode mask, characterized in that a transfer pattern including a light-shielding portion, a light-transmitting portion, an i-th semi-transmissive portion, and a second semi-transmissive portion is formed on a transparent substrate, Further, the method includes the following steps: preparing a photomask substrate on which the first semi-transmissive film and the light shielding film are sequentially laminated, and the first semi-transparent film and the light shielding film are in a complementary relationship with each other 147633.doc 201104353 forming a first resisting pattern covering the predetermined region of the light-shielding portion and the predetermined region for forming the first semi-transmissive portion on the light-shielding film; After etching the light shielding film as a mask, the first semi-transmissive film is embossed to remove the first resist pattern; and the second semi-transmissive film is formed on the transparent substrate and the light shielding film; a second resist pattern covering a predetermined region of the light-shielding portion and a predetermined region for forming the second semi-transmissive portion, and a second resist pattern etched by using the second resist pattern as a mask Second half light transmission After the film and the light shielding film, the second resist pattern is removed to form the light shielding portion, the light transmitting portion, the second semi-transmissive portion, and the second semi-transmissive portion; and the first semi-transmissive portion is controlled to pass through The exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the second semi-transmissive portion are caused by a phase difference between the exposure light of the light portion and the exposure light transmitted through the second semi-transmissive portion. The light intensity formed by the interference is equal to or higher than the light intensity of the exposure light transmitted through the first semi-transmissive portion, and the above-described first is selected! The material and film thickness of the semi-transmissive film and the second semi-transmissive film. 11. A method of manufacturing a multi-tone mask, comprising: forming a transfer pattern including a light shielding portion, a light transmitting portion, an i-th semi-transmissive portion, and a second semi-transmissive portion on a transparent substrate; And comprising the steps of: preparing a reticle substrate on which the light-shielding film 147633.doc 201104353 is formed on the transparent substrate; and forming the remedy L on the light-shielding film to cover the first region forming the predetermined area of the light-shielding portion a resist pattern; after etching the light shielding film, removing the first resist pattern by using the first resist pattern as a mask; forming a first semi-transmissive film on the transparent substrate and the light shielding film; a second resist pattern covering the formation region of the light shielding portion and the predetermined region of the first semi-light transmission portion, respectively, is formed on the semi-transmissive film; and the second resist pattern is used as a mask to engrave the above-mentioned The first! After removing the semi-transmissive film, the second resist pattern is removed; the second semi-transmissive film is formed on the transparent substrate and the first semi-transmissive film; and the second semi-transmissive film is formed on the second semi-transparent film. a third resist pattern in which the light-shielding portion is formed in a predetermined region, a predetermined region in which the second semi-transmissive portion is formed, and a predetermined region in which the second semi-transmissive portion is formed; and the third resist pattern is used as a mask After the second semi-transmissive film is described, the third resist pattern is removed to form the light-shielding portion, the light-transmitting portion, the first semi-transmissive portion, and the second semi-transmissive portion; The phase difference between the exposure light passing through the second semi-transmissive portion and the exposure light transmitted through the second semi-transmissive portion causes the exposure light transmitted through the first semi-transmissive portion to pass through the second semi-transmissive portion The first semi-transmissive film and the second semi-transmissive film are selected such that the light intensity formed by the interference of the exposure light is equal to or higher than the light intensity of the exposure light transmitted through the second semi-transparent light 147633.doc 201104353. Material and film thickness. 12. A pattern transfer method characterized in that a multi-tone light having a transfer pattern including a light shielding portion, a light transmitting portion, a second semi-transmissive portion, and a second semi-transmissive portion is formed on a transparent substrate a cover that irradiates exposure light to a resist film formed on the transfer target to form a multi-tone resist pattern on the transfer target; and the transmittance of the first semi-transmissive portion to the exposure light is smaller than Light transmittance of the second semi-transmissive portion with respect to the exposure light, and light formed by interference between the exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the second semi-transmissive portion Controlling a phase difference between the exposure light transmitted through the first semi-transmissive portion and the exposure light transmitted through the second semi-transmissive portion, such that the intensity is equal to or higher than the light intensity of the exposure light transmitted through the first semi-transmissive portion . 13. The pattern transfer method of claim 12, wherein the pattern is transmitted through the above! The light intensity formed by the interference between the exposure light transmitted through the light transmitting portion and the exposure light passing through the light transmitting portion is equal to or higher than the light intensity of the exposure light transmitted through the second semi-light transmitting portion, and is controlled to pass through the third light. The exposure light of the semi-transmissive portion is in phase difference with the exposure light transmitted through the light transmitting portion. 14. The pattern transfer method according to claim 12 or 13, wherein the light intensity formed by the interference between the exposure light transmitted through the second semi-transmissive portion and the exposure light transmitted through the light transmitting portion is transmitted through The phase difference between the exposure light transmitted through the second 147633.doc 201104353 semi-transmissive portion and the exposure light transmitted through the light transmitting portion is controlled so as to be equal to or higher than the light intensity of the exposure light in the second semi-transmissive portion. 147633.doc
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