CN102426411A - Method for protecting mask plate - Google Patents
Method for protecting mask plate Download PDFInfo
- Publication number
- CN102426411A CN102426411A CN2011101834539A CN201110183453A CN102426411A CN 102426411 A CN102426411 A CN 102426411A CN 2011101834539 A CN2011101834539 A CN 2011101834539A CN 201110183453 A CN201110183453 A CN 201110183453A CN 102426411 A CN102426411 A CN 102426411A
- Authority
- CN
- China
- Prior art keywords
- mask plate
- chromium layer
- layer
- chemical
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a method for protecting a mask plate. The method is characterized by successively comprising the following steps of: carrying out chemical passivation treatment on a chromium layer arranged on the mask plate by a strong acid to form a compact oxide layer covering the chromium layer; and depositing a thin film covering a substrate contained in the mask plate by a chemical vapor deposition method, wherein the thin film further covers the chromium layer simultaneously, and the oxide layer is formed on the surface of the chromium layer. Through the method disclosed by the invention, the further oxidation of the chromium layer and the generation of stain on the mask plate are effectively prevented, the loss caused by the stain on the mask plate is reduced, and the silicon nitride thin film layer on the surface is removed only by a chemical method when the mask plate is practically used.
Description
Technical field
The present invention relates to be used for protecting integrated circuit to make the method for mask plate, relate in particular to a kind of protection mask plate method that can satisfy above technology generations of 193nm photoetching technique and the employing of EUV (Extreme Ultraviolet, extreme ultraviolet) technical need.
Background technology
Mask plate usually can be polluted on the mask plate in the semiconductor chip fabrication process.For the surface contaminated mask plate is arranged, the pollution meeting brings defective to the product of processing by mask plate.Pollutant can make mask plate and the film that covers above it between produce the space, thereby cause the quality of semi-conductor chip low, serious meeting makes the calcellation of semi-conductor chip.
Chinese patent CN1856739A has disclosed a kind of method and apparatus that is used to compensate gravity to the influence of the film that is used to protect mask plate and avoids polluting.This method is included in the mask plate top and diaphragm is provided so that limit the encirclement that has the space therebetween, and the air pressure of regulating in the space influences diaphragm with compensation gravity.Regulate the air pressure step in this method and comprise the step that piston apparatus is provided; Piston apparatus comprises that the piston element in the shell is so that limit chamber; Gas exchange is carried out in space between chamber and diaphragm and the mask plate; The mobile adjusting that causes surrounding interior air pressure of piston element thus is so that compensation gravity is for the influence of diaphragm.
Chinese patent CN1994589A has disclosed a kind of method that is used to clean the industrial large-scale photo mask board of TFT-LCD (thin film transistor (TFT)-LCD).Utilize high-pressure airgun, the method for auxiliary polyalcohol cleaning rod and industrial cotton rod, and utilize auxiliary reagent acetone and pure water in good time, reach the small foreign particles on effective removing photo mask board surface and the effect of spot.
The way of GPF (General Protection False mask plate is directly on by substrate and the formed mask plate of chromium layer, directly to deposit one deck macromolecule organic protective seam now, but possibly cause certain damage for the chromium layer in the mask plate like this.The chromium layer is to a certain extent by irregular oxidation, and the spot on the mask plate makes and produces the space between mask plate and the organism protective seam on it.The method that provides above is all cumbersome, can cause the increase of manufacturing cost for semi-conductive production.If can realize adopting simple process to realize, that can satisfy above each technology generations of 193nm and get demand, also can satisfy the needed demand of EUV technology of new rise simultaneously.
Summary of the invention
The present invention provides a kind of method of protecting mask plate, changes originally only in the guard method of surface deposition one deck macromolecule organic film of mask plate, and the chromium layer on mask plate is provided with the fine and close protective seam of one deck, deposit protective seam on mask plate again.Make and can not leave spot on the mask plate, effectively stop the chromium layer to get further oxidation, and the generation of spot on the mask plate.
A kind of method of protecting mask plate is provided to achieve these goals, it is characterized in that, comprise: will on mask plate, carry out the chemical passivation processing with strong acid by set chromium layer, and form one deck and cover the compact oxide on the chromium layer with step under the order; Utilize chemical vapour deposition technique, the deposition thin film covers on the substrate that said mask plate comprises, and this film also covers on the chromium layer that the surface is formed with oxide layer simultaneously.
The present invention adopts chemical passivation method; Chromium layer on the mask plate surface forms oxide layer earlier; After forming this oxide layer, deposit the silicon nitride passivation of skim, with the generation of spot on prevention further oxidation of chromium layer and the mask plate through the method for chemical vapor deposition.Since the concentrated sulphuric acid, red fuming nitric acid (RFNA) at normal temperatures with many Metal Contact after meeting, form the oxide film of one deck densification in surface reaction, can prevent that the concentrated sulphuric acid, red fuming nitric acid (RFNA) from further reacting.Thus, the strong acid of being selected for use among the present invention is selected the red fuming nitric acid (RFNA) and/or the concentrated sulphuric acid for use, and the concentration of the concentrated sulphuric acid is preferably more than the 98wt%, and the concentration of red fuming nitric acid (RFNA) is preferably more than the 65wt%.More preferably the concentration of the concentrated sulphuric acid is preferably more than the 99wt%, and the concentration of red fuming nitric acid (RFNA) is preferably more than the 70wt%.
The whole passivation reaction time is to forming the compact oxide important influence on the mask plate.Passivation time is too short, and the oxide layer of formation can't form oxide layer closely.Passivation time is long, and the concentrated sulphuric acid and red fuming nitric acid (RFNA) will cause certain damage to mask plate.The time of passivation reaction roughly was controlled in 1500 seconds, preferably was controlled in 1 ~ 1200 second, and preferably the time of passivation reaction was controlled at 1 ~ 600 second.
In the method provided by the invention, wherein mentioning the film that covers on oxide layer and the substrate is silicon nitride.The silicon nitride film THICKNESS CONTROL is between 10 ~ 500.
The present invention provides a kind of method of protecting mask plate, and this method can form oxide layer through the chromium layer of simple chemical passivation method on mask plate surface, after forming this oxide layer, deposits the silicon nitride of skim through the method for chemical vapor deposition.The effective generation that must stop spot on further oxidation of chromium layer and the mask plate of method provided by the invention; Reduced the loss that has spot to cause because of mask plate; When the actual use of mask plate, the silicon nitride passivation thin layer that only needs to remove the surface through chemical method gets final product.
Description of drawings
Fig. 1 is the structural representation that carries out mask plate after the passivation reaction in the method for protection mask plate provided by the invention.
Fig. 2 is the structural representation behind one silicon nitride layer of deposit on the mask plate in the method for protection mask plate provided by the invention.
Embodiment
A kind of method of protecting mask plate provided by the invention; This method comprises that the chromium layer of method on the mask plate surface through chemical passivation forms oxide layer; After forming this oxide layer, deposit the silicon nitride passivation of skim, with the generation of spot on prevention further oxidation of chromium layer and the mask plate through the method for chemical vapor deposition.
Since the concentrated sulphuric acid, red fuming nitric acid (RFNA) at normal temperatures with many Metal Contact after meeting, form the oxide film of one deck densification in surface reaction, can prevent that the concentrated sulphuric acid, red fuming nitric acid (RFNA) from further reacting.The equation of the concentrated sulphuric acid and red fuming nitric acid (RFNA) and the reaction of chromium layer is as follows.
The dense H in Cr+6
2SO
4-→ Cr
2(SO
4)
3+ 3SO
2↑+6H
2O
The dense HNO in Cr+4
3-→ Cr (NO
3)
3+ NO
2↑+2H
2O
When the chemical passivation processing was carried out on the mask plate surface, other spots on the mask plate also were eliminated simultaneously.It is oxidized that the thin layer of sin that on oxide layer, deposits afterwards further stops the chromium layer to get, thereby reach the effect of general protection mask plate.
Face down and protect the method for mask plate to explain further details to the present invention through concrete embodiment, so that better understand the present invention, but the following scope of the invention that do not limit.
Above substrate 1, be provided with chromium layer 2, substrate 1 forms mask plate together with chromium layer 2.Using concentration is that 99% the concentrated sulphuric acid is handled mask plate, and chromium layer 2 on the mask plate and the chemical passivation reaction that the concentrated sulphuric acid takes place form oxidation 3 on the surface of mask plate.In the chemical passivation reaction, oxide layer 3 thickness on the chromium layer 2 thicken along with the time lengthening of handling, and the whole chemical passivation reaction time is controlled between 360 seconds to 400 seconds.As the chemical passivation processing time too in weak point, certainly will cause chromium layer 2 part not form the situation of compact oxide 3, it is extremely disadvantageous handling for semi-conductive production like this.The structure of the mask plate after chemical passivation is handled is as shown in Figure 1.
Method through chemical vapor deposition deposits one deck silicon nitride film layer 4 on lip-deep oxide layer 3 of mask plate and substrate 1 afterwards.The thin layer of sin 4 that on the mask plate surface, forms, its thickness is between 300 to 400.The structure that is capped the thin layer of sin mask plate is as shown in Figure 2.
Above substrate 1, be provided with chromium layer 2, substrate 1 forms mask plate together with chromium layer 2.Using concentration is that 75% red fuming nitric acid (RFNA) is handled mask plate, and chromium layer 2 on the mask plate and the chemical passivation reaction that the concentrated sulphuric acid takes place form oxidation 3 on the surface of mask plate.In the chemical passivation reaction, oxide layer 3 thickness on the chromium layer 2 thicken along with the time lengthening of handling, and the whole chemical passivation reaction time is controlled between 500 seconds to 600 seconds.As the chemical passivation processing time too in weak point, certainly will cause chromium layer 2 part not form the situation of compact oxide 3, it is extremely disadvantageous handling for semi-conductive production like this.The structure of the mask plate after chemical passivation is handled is as shown in Figure 1.
Method through chemical vapor deposition deposits one deck silicon nitride film layer 4 on lip-deep oxide layer 3 of mask plate and substrate 1 afterwards.The thin layer of sin 4 that on the mask plate surface, forms, its thickness is between 450 to 500.The structure that is capped the thin layer of sin mask plate is as shown in Figure 2.
The present invention forms oxide layer 3 through the chromium layer 2 of chemical passivation method on the mask plate surface; After forming this oxide layer 3, deposit the silicon nitride layer 4 of skim, with the generation of staiing on prevention chromium layer 2 further oxidation and the mask plate through the method for chemical vapor deposition.When the actual use of mask plate, the silicon nitride passivation that only needs to remove the surface through chemical method gets final product.Processing step is simple and effective, has protected the surface of mask plate, the deterioration in quality that stops external particle spot mask plate to be caused.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (8)
1. a method of protecting mask plate is characterized in that, comprises with step under the order:
To on mask plate, carry out the chemical passivation processing with strong acid by set chromium layer, and form one deck and cover the compact oxide on the chromium layer;
Utilize chemical vapour deposition technique, the deposition thin film covers on the substrate that said mask plate comprises, and this film also covers on the chromium layer that the surface is formed with oxide layer simultaneously.
2. method according to claim 1 is characterized in that said strong acid is selected the concentrated sulphuric acid for use.
3. method according to claim 1 is characterized in that said strong acid is selected red fuming nitric acid (RFNA) for use.
4. method according to claim 2 is characterized in that the concentration of the said concentrated sulphuric acid is more than 98wt%.
5. method according to claim 3 is characterized in that the concentration of said red fuming nitric acid (RFNA) is more than 65wt%.
6. method according to claim 1 is characterized in that, in carrying out the chemical passivation processing procedure, the time that chromium layer and strong acid passivation reaction are continued was controlled between 1 ~ 600 second.
7. method according to claim 1 is characterized in that, the film that covers on the said oxide layer is a silicon nitride.
8. method according to claim 7 is characterized in that, described silicon nitride film thickness is 10 ~ 500.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101834539A CN102426411A (en) | 2011-07-01 | 2011-07-01 | Method for protecting mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101834539A CN102426411A (en) | 2011-07-01 | 2011-07-01 | Method for protecting mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102426411A true CN102426411A (en) | 2012-04-25 |
Family
ID=45960412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101834539A Pending CN102426411A (en) | 2011-07-01 | 2011-07-01 | Method for protecting mask plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102426411A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1742232A (en) * | 2002-11-25 | 2006-03-01 | 凸版光掩膜公司 | Photomask and method for creating a protective layer on the same |
| CN101770160A (en) * | 2009-12-30 | 2010-07-07 | 上海集成电路研发中心有限公司 | Method for protecting mask |
| CN101900932A (en) * | 2009-05-26 | 2010-12-01 | Hoya株式会社 | Multi-gray scale photomas, multi-gray scale photomas manufacture method and pattern transfer-printing method |
-
2011
- 2011-07-01 CN CN2011101834539A patent/CN102426411A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1742232A (en) * | 2002-11-25 | 2006-03-01 | 凸版光掩膜公司 | Photomask and method for creating a protective layer on the same |
| CN101900932A (en) * | 2009-05-26 | 2010-12-01 | Hoya株式会社 | Multi-gray scale photomas, multi-gray scale photomas manufacture method and pattern transfer-printing method |
| CN101770160A (en) * | 2009-12-30 | 2010-07-07 | 上海集成电路研发中心有限公司 | Method for protecting mask |
Non-Patent Citations (1)
| Title |
|---|
| G.E.MCGUIRE 等: "光掩模涂层的薄膜分析", 《半导体情报》, no. 04, 31 December 1980 (1980-12-31) * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3988676B2 (en) | Coating apparatus, thin film forming method, thin film forming apparatus, and semiconductor device manufacturing method | |
| JP4543617B2 (en) | Active matrix substrate manufacturing method, electro-optical device manufacturing method, electronic device manufacturing method, active matrix substrate manufacturing device, electro-optical device manufacturing device, and electric device manufacturing device | |
| CN106463392B (en) | Cooling pedestal for the cutting-up during plasma cutting-up with heat management | |
| US9385031B2 (en) | Method for providing a self-aligned pad protection in a semiconductor device | |
| CN102165570A (en) | Method and device for manufacturing field-effect transistor | |
| WO2006104819A3 (en) | A method and system for removing an oxide from a substrate | |
| TW200746299A (en) | A method of forming an oxide layer | |
| KR20080002638A (en) | Method for forming micro lenses and semiconductor device including the micro lenses | |
| CN101268411B (en) | Device and method for producing electronic device such as display device, and electronic device such as display device | |
| CN102426411A (en) | Method for protecting mask plate | |
| KR20060047217A (en) | Method and apparatus for manufacturing semiconductor device | |
| CN100547762C (en) | Form the method for contact hole | |
| CN103021817A (en) | Method of cleaning after wet etching | |
| CN101770160A (en) | Method for protecting mask | |
| CN100543945C (en) | The manufacture method of silicon nitride layer and the manufacture method of semiconductor element | |
| CN102420116A (en) | Method for eliminating recess defect of gate electrode | |
| CN102723272B (en) | Method for manufacturing semiconductor | |
| JP3194245B2 (en) | Processing method for substrate on which amorphous silicon layer is formed | |
| CN101738847B (en) | Method of manufacturing photomask and pattren transfer method using the smae | |
| CN1933111B (en) | Method for producing space wall, cleaning method after etching thereof and semiconductor element | |
| CN1255862C (en) | Method for reducing particulate generation | |
| CN103258733A (en) | Technological method capable of preventing shortcomings on photoresist during wet etching | |
| CN108878278A (en) | The manufacturing method of gate oxide | |
| CN105826184B (en) | The method for removing the silicon nitride layer on pattern wafer | |
| CN102237266A (en) | Method for reducing columnar defect in manufacturing process of semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120425 |