CN101025564B - Four-gradation photomask manufacturing method and photomask blank for use therein - Google Patents
Four-gradation photomask manufacturing method and photomask blank for use therein Download PDFInfo
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- CN101025564B CN101025564B CN2007100841365A CN200710084136A CN101025564B CN 101025564 B CN101025564 B CN 101025564B CN 2007100841365 A CN2007100841365 A CN 2007100841365A CN 200710084136 A CN200710084136 A CN 200710084136A CN 101025564 B CN101025564 B CN 101025564B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Abstract
The inventive manufacturing method forms a first light-semipermeable film on the transparent underlay in a preset order and photomask, each of which is manufactured by the material with resist and etches to the other. A second light-semipermeable film is formed on the photomask, which is manufactured by the material which can be etched in a same means of the photomask. Therefore, the combination of each film with the resist to the etching toward the other one and each film without the resist to the etching toward the other one may reduce the read-in frequency of the photo-etching to manufacture the four-gradation photomask.
Description
Technical field
The present invention relates to a kind of manufacture method of level Four photomask of the thin film transistor (TFT) (after this being called TFT) that is used to make LCD (after this being called LCD) etc., also relate to employed photomask blank in this manufacture method in addition.
Background technology
For example patented claim publication (JP-A) No.H09-146259 (after this being called patent documentation 1) of Japanese unexamined has disclosed a kind of multistage photomask, and wherein transmittance is multistage, i.e. three grades or more multistage change.When plane of refraction that forms optical element or reflecting surface, to use multistage photomask.
Multistage photomask disclosed in the patent documentation 1 is made in the following way.At first, on the film that is formed on metallic compound on the transparent substrates etc., form etchant resist, and described etchant resist is exposed/writes and develops, form first corrosion-resisting pattern thus.Then, use first corrosion-resisting pattern film of metallic compound etc. to be carried out etching as mask.Afterwards, on the film of metallic compound etc., form etchant resist once more, and described etchant resist is exposed/writes and develops, form second corrosion-resisting pattern thus.Then, use second corrosion-resisting pattern film of metallic compound etc. to be carried out etching once more as mask.The film of metallic compound by repeating to form corrosion-resisting pattern and etching pre-determined number etc., thus multistage photomask obtained.
Summary of the invention
Yet because in the disclosed multistage photo mask manufacturing method of patent documentation 1, the number of times of the film of etching metal compound etc. and the exposure that is used to form described etched corrosion-resisting pattern/write indegree to be equal to each other are so increased the number of times of exposure/write.For example, in order to make the level Four photomask that is suitable on four ranks, changing transmittance, be necessary to carry out to expose/write for three times.
Therefore, the objective of the invention is to, propose a kind of level Four photo mask manufacturing method, it can write with less number of times by photoetching and make the level Four photomask, and also proposes employed photomask blank in this manufacture method in addition.
(first aspect)
The method of making the level Four photomask comprises shading light part, transmittance part and first and second light half transmitting part with different transmittances.Described method comprises the step of preparing photomask blank, wherein on transparent substrate, form first smooth semi-transmissive film and the photomask of making by the material that each other etching is had corrosion stability successively, and on the photomask of photomask blank, form first corrosion-resisting pattern.First corrosion-resisting pattern has and transmittance part and the corresponding open region of the second smooth half transmitting part.Described method also comprises the steps: to use first corrosion-resisting pattern to come the etching photomask as mask in addition, and the etching first smooth semi-transmissive film divests first corrosion-resisting pattern afterwards then.Described method also further comprises the steps: to form the second smooth semi-transmissive film on transparent substrate and photomask, and forms second corrosion-resisting pattern on the second smooth semi-transmissive film.Second corrosion-resisting pattern has and transmittance part and the corresponding open region of the first smooth half transmitting part.Described in addition method also comprises the steps: to use second corrosion-resisting pattern to come etching second smooth semi-transmissive film and the photomask as mask, then second corrosion-resisting pattern is removed, formed transmittance part, shading light part, the first smooth half transmitting part and the second smooth half transmitting part thus.
(second aspect)
The method of making the level Four photomask comprises shading light part, transmittance part and first and second light half transmitting part with different transmittances.Described method comprises the step of preparing photomask blank, wherein on transparent substrate, form first smooth semi-transmissive film and the photomask of making by the material that each other etching is had corrosion stability successively, and on the photomask of photomask blank, form first corrosion-resisting pattern.First corrosion-resisting pattern has and transmittance part and the corresponding open region of the second smooth half transmitting part.Described method also comprises the steps: to use first corrosion-resisting pattern to come the etching photomask as mask in addition, then first corrosion-resisting pattern is divested, and uses photomask to come the etching first smooth semi-transmissive film as mask afterwards.Described method also further comprises the steps: to form the second smooth semi-transmissive film on transparent substrate and photomask, and forms second corrosion-resisting pattern on the second smooth semi-transmissive film.Second corrosion-resisting pattern has and transmittance part and the corresponding open region of the first smooth half transmitting part.Described in addition method also comprises the steps: to use second corrosion-resisting pattern to come etching second smooth semi-transmissive film and the photomask as mask, then second corrosion-resisting pattern is removed, formed transmittance part, shading light part, the first smooth half transmitting part and the second smooth half transmitting part thus.
(third aspect)
According to first or the method for second aspect in, the preferred second smooth semi-transmissive film is by can etched material is made by the etching identical with the etching of photomask.
(fourth aspect)
According to first or the method for second aspect in, the preferred first smooth semi-transmissive film is made as the material of principal ingredient by containing molybdenum silicide, and in the photomask and the second smooth semi-transmissive film each is all made as the material of principal ingredient by containing chromium.
(the 5th aspect)
According to first or the method for second aspect in use photomask blank.Described photomask blank has the film of the formation pattern on transparent substrates, and described film comprises first smooth semi-transmissive film and the photomask that is stacked, and the second smooth semi-transmissive film that forms on the film of described formation pattern.
(the 6th aspect)
The method of making the level Four photomask comprises shading light part, transmittance part and first and second light half transmitting part with different transmittances.Described method comprises the step of preparing photomask blank, wherein forms the first smooth semi-transmissive film, second smooth semi-transmissive film and the photomask on transparent substrate successively.The first smooth semi-transmissive film and photomask are made by the material that the etching that makes the two to the material of the second smooth semi-transmissive film has corrosion stability.Described method also is included in the step that forms first corrosion-resisting pattern on the photomask of photomask blank.First corrosion-resisting pattern has and transmittance part and the corresponding open region of the first smooth half transmitting part.Described method also comprises the steps: to use first corrosion-resisting pattern to come the etching photomask as mask in addition, and the etching second smooth semi-transmissive film divests first corrosion-resisting pattern afterwards then.Described method also further comprises the steps: to form second corrosion-resisting pattern that has with transmittance part and the corresponding open region of the second smooth half transmitting part, and use second corrosion-resisting pattern to come the etching photomask and the first smooth semi-transmissive film as mask, then second corrosion-resisting pattern is removed, formed transmittance part, shading light part, the first smooth half transmitting part and the second smooth half transmitting part thus.
(the 7th aspect)
The method of making the level Four photomask comprises shading light part, transmittance part and first and second light half transmitting part with different transmittances.Described method comprises the step of preparing photomask blank, wherein forms the first smooth semi-transmissive film, second smooth semi-transmissive film and the photomask on transparent substrate successively.The first smooth semi-transmissive film and photomask are made by the material that the etching that makes the two to the material of the second smooth semi-transmissive film has corrosion stability.Described method also is included in the step that forms first corrosion-resisting pattern on the photomask of photomask blank.First corrosion-resisting pattern has and transmittance part and the corresponding open region of the first smooth half transmitting part.Described method also comprises the steps: to use first corrosion-resisting pattern to come the etching photomask as mask in addition, then first corrosion-resisting pattern is divested, and uses photomask to come the etching second smooth semi-transmissive film as mask afterwards.Described method also further comprises the steps: to form second corrosion-resisting pattern that has with transmittance part and the corresponding open region of the second smooth half transmitting part, and use second corrosion-resisting pattern to come the etching photomask and the first smooth semi-transmissive film as mask, then second corrosion-resisting pattern is removed, formed transmittance part, shading light part, the first smooth half transmitting part and the second smooth half transmitting part thus.
(eight aspect)
In according to the method aspect the 6th or the 7th, the preferred first smooth semi-transmissive film and photomask can be by identical etchants and etched.
(the 9th aspect)
In the method according to eight aspect, the preferred second smooth semi-transmissive film is made as the material of principal ingredient by containing molybdenum silicide, and in the first smooth semi-transmissive film and the photomask each is all made as the material of principal ingredient by containing chromium.
(the tenth aspect)
In method, use photomask blank according to the either side in aspect the 6th, seven or nine.On transparent substrate, stack gradually the first smooth semi-transmissive film, second smooth semi-transmissive film and the photomask.
According to first to fourth aspect of the present invention, on transparent substrates, form first smooth semi-transmissive film and the photomask of making by the material that each other etching is had corrosion stability successively, and be formed with the second smooth semi-transmissive film on described photomask, it is preferably by can etched material is made by the etching identical with the etching of photomask.Therefore, the film by each other etching being had corrosion stability and etching each other do not had the combination of the film of corrosion stability can adopt photoetching to make the level Four photomask with the indegree of writing that reduces.
According to the 6th to the 9th aspect of the present invention, on transparent substrates, form the first smooth semi-transmissive film, second smooth semi-transmissive film and the photomask successively.Make by adopting identical etching by etched material with photomask for the first smooth semi-transmissive film, and the second smooth semi-transmissive film is made by the material that the material to the first smooth semi-transmissive film and photomask has corrosion stability.Therefore, the film by each other etching being had corrosion stability and etching each other do not had the combination of the film of corrosion stability can adopt photoetching to make the level Four photomask with the indegree of writing that reduces.
Description of drawings
Figure 1A to 1I is the view that is used in particular for illustrating according to the level Four gray scale mask manufacture process of first embodiment in the level Four photo mask manufacturing method according to the present invention;
Fig. 2 A and 2B are respectively the vertical view and the sectional view of the level Four gray scale mask of making by the manufacture process of Figure 1A to 1I, and wherein Fig. 2 B shows level Four gray scale mask and transfer printing target together;
Fig. 3 A to 3G is the view that is used in particular for illustrating according to the level Four gray scale mask manufacture process of second embodiment in the level Four photo mask manufacturing method according to the present invention;
Fig. 4 A and 4B are respectively the vertical view and the sectional view of the level Four gray scale mask of making by the manufacture process of Fig. 3 A to 3G, and wherein Fig. 4 B shows level Four gray scale mask and transfer printing target together.
Embodiment
To contrast accompanying drawing is below set forth some embodiments of the present invention.
(first embodiment)
Figure 1A to 1I is for illustrating the view according to the level Four gray scale mask manufacture process of first embodiment in the level Four photo mask manufacturing method according to the present invention especially.Fig. 2 A and 2B are respectively the vertical view and the sectional view of the level Four gray scale mask of making by the manufacture process of Figure 1A to 1I.
The thin film transistor (TFT) (TFT) or the color filter that for example are used to make LCD (LCD), plasma display panel (PDP) etc. at the gray scale mask 10 shown in Fig. 2 A and the 2B, and be suitable for forming corrosion-resisting pattern 12 on transfer printing target 11, the thickness of described corrosion-resisting pattern 12 changes step by step or continuously.In Fig. 2 B, symbol 19A, 19B and 19C refer to the film that piles up respectively on transfer printing target 11.That is to say that according to present embodiment, transfer printing target 11 is by forming with named order stacked film 19A, 19B and 19C on substrate 19.
The first smooth half transmitting part 15A realizes by the first smooth semi-transmissive film 17A that forms the light half transmitting on such as the surface of the transparent substrates 16 of glass substrate.The second smooth half transmitting part 15B realizes by the second smooth semi-transmissive film 17B that forms the light half transmitting on the surface of transparent substrates 16.Shading light part 13 forms by pile up the first smooth semi-transmissive film 17A, photomask 18 and the second smooth semi-transmissive film 17B on the surface of light transmissive substrate 16 with named order.
The first smooth semi-transmissive film 17A is the film that contains metal and silicon, and preferably contains the film of the molybdenum silicide (MoSi) as principal ingredient.For example, contain MoSi (MoSi
2), MoSiN, MoSiON, MoSiCON or the like.In the second smooth semi-transmissive film 17B and the photomask 18 each all is the film that contains as the chromium of principal ingredient, wherein chromium is preferred for photomask 18, and chromium nitride, chromium oxide, nitrogen chromium oxide, charomic fluoride etc. are preferred for the second smooth semi-transmissive film 17B.The transmittance of the first smooth half transmitting part 15A is set based on material and choosing of thickness to the first smooth semi-transmissive film 17A.The transmittance of the second smooth half transmitting part 15B is set based on material and choosing of thickness to the second smooth semi-transmissive film 17B.The transmittance of shading light part 13 is set based on material and choosing of thickness to the first smooth semi-transmissive film 17A, the second smooth semi-transmissive film 17B and photomask 18.
When stating level Four gray scale mask 10 in the use, exposure light is in shading light part 13 not transmissions, and exposure light reduces at the second smooth half transmitting part 15B, exposure light at the first smooth half transmitting part 15A than further reducing at the second smooth half transmitting part 15B.Thus, the etchant resist (positive photoresist film) that is carried on the transfer printing target 11 forms following corrosion-resisting pattern 12.Corrosion-resisting pattern 12 is so disposed: with the etchant resist thickness T1 maximum at shading light part 13 corresponding part places, and with the etchant resist thickness T2 at the corresponding part of first smooth half transmitting part 15A place less than etchant resist thickness T1, but greater than with the etchant resist thickness T3 at the corresponding part of second smooth half transmitting part 15B place.Corrosion-resisting pattern 12 is not having etchant resist with transmittance part 14 corresponding part places.
Now with reference to Figure 1A to 1I the manufacture process of making above-mentioned level Four gray scale mask 10 is set forth.
At first, on the surface of transparent substrates 16, form the first smooth semi-transmissive film 17A and photomask 18, form and prepare photomask blank 20 (Figure 1A) thus with named order.In the first smooth semi-transmissive film 17A and the photomask 18 each all has the etched corrosion stability to another in the manufacture process of gray scale mask 10.For example, the first smooth semi-transmissive film 17A is made by the material that chromium etching gas or liquid is had corrosion stability, and photomask 18 is made by the material that MoSi etching gas or liquid is had corrosion stability.
Then, on the photomask 18 of photomask blank 20, form etchant resist (positive photoresist film), and utilize electron beam or laser write device that described etchant resist is exposed/writes and development subsequently, form first corrosion-resisting pattern 21 (Figure 1B) thus.The shape that first corrosion-resisting pattern 21 is formed have with the transmittance part 14 and the corresponding open region of the second smooth half transmitting part 15B of manufactured gray scale mask 10.
Afterwards, use chromium etching gas or liquid and use first corrosion-resisting pattern 21 photomask 18 of the photomask blank 20 that is formed with first corrosion-resisting pattern 21 to be carried out dry-etching or Wet-type etching (Fig. 1 C) as mask.By described etching, photomask 18 is formed photomask pattern 22.Because the first smooth semi-transmissive film 17A has corrosion stability to chromium etching gas or liquid, so during being difficult in the etching of photomask 18 the first smooth semi-transmissive film 17A is carried out etching.
After forming photomask pattern 22, first corrosion-resisting pattern 21 is divested (Fig. 1 D).Then, use MoSi etching gas or liquid and use photomask pattern 22 the first smooth semi-transmissive film 17A to be carried out dry-etching or Wet-type etching, form the first smooth semi-transmissive film pattern 23 (Fig. 1 E) thus as mask.Can afterwards first corrosion-resisting pattern 21 among Fig. 1 D be divested.That is to say, can stipulate, after forming photomask pattern 22, by using first corrosion-resisting pattern 21 and photomask pattern 22 the first smooth semi-transmissive film 17A to be carried out dry-etching or Wet-type etching as mask, form the first smooth semi-transmissive film pattern 23 thus, then first corrosion-resisting pattern 21 is divested.Because photomask 18 has the corrosion stability to MoSi etching gas or liquid, so can not carry out etching to photomask 18 during the etching of the first smooth semi-transmissive film 17A.Utilize and for example contain the etching liquid of at least a fluorine compounds of from hydrofluorite, silicon hydrofluorite and ammonium bifluoride, choosing and at least a oxygenant of from hydrogen peroxide, nitric acid and sulfuric acid, choosing as the MoSi etching liquid.
After forming the above-mentioned first smooth semi-transmissive film pattern 23, on photomask 18 and the transparent substrates 16 that is exposed, form the second smooth semi-transmissive film 17B, form another photomask blank 24 (Fig. 1 F) thus.The second smooth semi-transmissive film 17B is by can etched material is made by the etching identical with the etching of photomask 18.Therefore, each in the second smooth semi-transmissive film 17B and the photomask 18 all only has the etched little corrosion stability to another.Shown in Fig. 1 E and 1F, photomask blank 24 is so disposed, thereby first smooth semi-transmissive film 17A that piles up on transparent substrates 16 and photomask 18 are formed first smooth semi-transmissive film pattern 23 and the photomask pattern 22 respectively, and form the second smooth semi-transmissive film 17B on the film of these formation patterns.
Then, on the second smooth semi-transmissive film 17B of photomask blank 24, form etchant resist, and in the same manner as described above described etchant resist is exposed/writes and develops, form second corrosion-resisting pattern 25 (Fig. 1 G) thus.The shape that second corrosion-resisting pattern 25 is formed has and transmittance part 14 and the corresponding open region of the first smooth half transmitting part 15A.
Afterwards, use chromium etching gas or liquid and use second corrosion-resisting pattern 25 the second smooth semi-transmissive film 17B and photomask 18 to be carried out dry-etching or Wet-type etching (Fig. 1 H) as mask.Then, by second corrosion-resisting pattern 25 of remainder is removed (divesting), obtain level Four gray scale mask 10, described level Four gray scale mask 10 has transmittance part 14, the first smooth half transmitting part 15A that passes through the first smooth semi-transmissive film 17A formation, the second smooth half transmitting part 15B that passes through the second smooth semi-transmissive film 17B formation that is stacked, the shading light part 13 (Fig. 1 I) that passes through the first smooth semi-transmissive film 17A, shading light part 18 and the second smooth semi-transmissive film 17B formation.
Obtain following effect according to aforementioned embodiments.Manufacture process according to gray scale mask 10, on light transmissive substrate 16, form the first smooth semi-transmissive film 17A and the photomask of making by the material that each other etching is had corrosion stability 18 with named order, and be formed with the second smooth semi-transmissive film 17B on described photomask 18, the described second smooth semi-transmissive film 17B is by can etched material is made by the etching identical with the etching of photomask 18.Therefore, the combination of film by each other etching being had big corrosion stability and the film that each other etching is had relative little corrosion stability can be reduced to the number of times that writes by photoetching twice and make level Four photomask 10.
(second embodiment)
Fig. 3 A to 3G is the view that illustrates according to the level Four gray scale mask manufacture process of second embodiment in the level Four photo mask manufacturing method according to the present invention.Fig. 4 A and 4B are respectively the vertical view and the sectional view of the level Four gray scale mask of making by the manufacture process of Fig. 3 A to 3G.According to second embodiment, identical symbol refer to aforementioned first embodiment in the identical part of those parts, therefore save its explanation.
The thin film transistor (TFT) (TFT) or the color filter that equally also for example are used to make LCD (LCD), plasma display panel (PDP) etc. at the gray scale mask 30 shown in Fig. 4 A and the 4B, and be suitable for forming corrosion-resisting pattern 32 on transfer printing target 31, the thickness of described corrosion-resisting pattern 32 changes step by step or continuously.
The first smooth half transmitting part 35A realizes by the first smooth semi-transmissive film 37A that forms the light half transmitting on such as the surface of the transparent substrates 16 of glass substrate.The second smooth half transmitting part 35B realizes by the second smooth semi-transmissive film 37B that piles up the first smooth semi-transmissive film 37A and light half transmitting on the surface of transparent substrates 16.Shading light part 33 forms by pile up the first smooth semi-transmissive film 37A, the second smooth semi-transmissive film 37B and photomask 38 on the surface of transparent substrates 16 with named order.
The second smooth semi-transmissive film 37B is the film that contains metal and silicon, and preferably contains the film of the molybdenum silicide (MoSi) as principal ingredient.For example, contain MoSi (MoSi
2), MoSiN, MoSiON, MoSiCON or the like.In the first smooth semi-transmissive film 37A and the photomask 38 each all is the film that contains as the chromium of principal ingredient, wherein chromium is preferred for photomask 38, and chromium nitride, chromium oxide, nitrogen chromium oxide, charomic fluoride etc. are preferred for the first smooth semi-transmissive film 37A.The transmittance of the first smooth half transmitting part 35A is set based on material and choosing of thickness to the first smooth semi-transmissive film 37A.The transmittance of the second smooth half transmitting part 35B is set based on material and choosing of thickness to the first smooth semi-transmissive film 37A and the second smooth semi-transmissive film 37B.
When stating level Four gray scale mask 30 in the use, exposure light is in shading light part 33 not transmissions, and exposure light reduces at the first smooth half transmitting part 35A, exposure light at the second smooth half transmitting part 35B than further reducing at the first smooth half transmitting part 35A.Thus, the etchant resist (positive photoresist film) that is carried on the transfer printing target 31 forms following corrosion-resisting pattern 32.Corrosion-resisting pattern 32 is so disposed: with the etchant resist thickness T11 maximum at shading light part 33 corresponding part places, and with the etchant resist thickness T12 at the corresponding part of second smooth half transmitting part 35B place less than etchant resist thickness T11, but greater than with the etchant resist thickness T13 at the corresponding part of first smooth half transmitting part 35A place.Corrosion-resisting pattern 32 is not having etchant resist with transmittance part 34 corresponding part places.
Now with reference to Fig. 3 A to 3G the manufacture process of making above-mentioned level Four gray scale mask 30 is set forth.
At first, on the surface of transparent substrates 16, form the first smooth semi-transmissive film 37A, the second smooth semi-transmissive film 37B and photomask 38, form and prepare photomask blank 40 (Fig. 3 A) thus with named order.In the second smooth semi-transmissive film 37B and the photomask 38 each all has the etched corrosion stability to another in the manufacture process of gray scale mask 30.For example, the second smooth semi-transmissive film 37B is made by the material to the corrosion stability of chromium etching gas or liquid, and photomask 38 is made by the material that MoSi etching gas or liquid is had corrosion stability.The first smooth semi-transmissive film 37A is by can etched material is made by the etching identical with the etching of photomask 38.Therefore, each in the first smooth semi-transmissive film 37A and the photomask 38 all only has the etched little corrosion stability to another.
Then, on the photomask 38 of photomask blank 40, form etchant resist (positive photoresist film), and utilize electron beam or laser write device that described etchant resist is exposed/writes and development subsequently, form first corrosion-resisting pattern 41 (Fig. 3 B) thus.The shape that first corrosion-resisting pattern 41 is formed has and transmittance part 34 and the corresponding open region of the first smooth half transmitting part 35A that the gray scale mask 30 that will make is arranged.
Afterwards, use chromium etching gas or liquid and use first corrosion-resisting pattern 41 photomask 38 of the photomask blank 40 that is formed with first corrosion-resisting pattern 41 to be carried out dry-etching or Wet-type etching (Fig. 3 C) as mask.By described etching, photomask 38 is formed photomask pattern 42.Because the second smooth semi-transmissive film 37B has the corrosion stability to chromium etching gas or liquid, so prevented to make that the second smooth semi-transmissive film 37B is etched during the etching of photomask 38.
After forming photomask pattern 42, first corrosion-resisting pattern 41 is divested, then, use MoSi etching gas or liquid and use photomask pattern 42 the second smooth semi-transmissive film 37B to be carried out dry-etching or Wet-type etching, form the second smooth semi-transmissive film pattern 43 (Fig. 3 D) thus as mask.According to present embodiment, equally also can afterwards first corrosion-resisting pattern 41 be divested.That is to say, can stipulate, after forming photomask pattern 42, by using first corrosion-resisting pattern 41 and photomask pattern 42 the second smooth semi-transmissive film 37B to be carried out dry-etching or Wet-type etching as mask, form the second smooth semi-transmissive film pattern 43 thus, then first corrosion-resisting pattern 41 is divested.Because each among the photomask 38 and the first smooth semi-transmissive film 37A all has the corrosion stability to MoSi etching gas or liquid, so prevented that described these films are etched during the etching of the second smooth semi-transmissive film 37B.
After forming the above-mentioned second smooth semi-transmissive film pattern 43, on the photomask 38 and the first smooth semi-transmissive film 37A that is exposed, form etchant resist.In the same manner as described above described etchant resist is exposed/writes and develops then, form second corrosion-resisting pattern 44 (Fig. 3 E) thus.The shape that second corrosion-resisting pattern 44 is formed has and transmittance part 34 and the corresponding open region of the second smooth half transmitting part 35B.
Afterwards, use chromium etching gas or liquid and use second corrosion-resisting pattern 44 photomask 38 and the first smooth semi-transmissive film 37A to be carried out dry-etching or Wet-type etching (Fig. 3 F) as mask.Then, by second corrosion-resisting pattern 44 of remainder is removed (divesting), obtain level Four gray scale mask 30, the shading light part 33 (Fig. 3 G) that the first smooth half transmitting part 35A that described level Four gray scale mask 30 has the transmittance part 34 that is stacked, form by the first smooth semi-transmissive film 37A, the second smooth half transmitting part 35B that forms by the first smooth semi-transmissive film 37A that is stacked and the second smooth semi-transmissive film 37B, the first smooth semi-transmissive film 37A, the second smooth semi-transmissive film 37B by being stacked and photomask 38 form.
Obtain following effect according to aforementioned embodiments.Manufacture process according to gray scale mask 30, on transparent substrate 16, form the first smooth semi-transmissive film 37A, the second smooth semi-transmissive film 37B and photomask 38 with named order, the wherein said first smooth semi-transmissive film 37A and photomask 38 be by can making by etched material by same etching, and the second smooth semi-transmissive film 37B is made by the material that the etching to the material of the first smooth semi-transmissive film 37A and photomask 38 has corrosion stability.Therefore, the film by each other etching being had corrosion stability and etching each other do not had the combination of the film of corrosion stability can be reduced to twice with the number of times that writes that adopts photoetching and make level Four photomask 30.
Although the present invention is set forth, be the invention is not restricted to this by means of two embodiments.
Claims (7)
1. method of making the level Four photomask, described level Four photomask comprise shading light part, transmittance part and first and second light half transmitting part with different transmittances, and described method comprises the steps:
Prepare photomask blank, wherein on transparent substrate, form first smooth semi-transmissive film and the photomask of making by the material that each other etching is had corrosion stability successively;
Form first corrosion-resisting pattern on the described photomask of described photomask blank, described first corrosion-resisting pattern has and described transmittance part and the corresponding open region of the described second smooth half transmitting part;
Use described first corrosion-resisting pattern to come the described photomask of etching as mask, the etching described first smooth semi-transmissive film divests described first corrosion-resisting pattern afterwards then;
On described transparent substrate and described photomask, form the second smooth semi-transmissive film;
Form second corrosion-resisting pattern on the described second smooth semi-transmissive film, described second corrosion-resisting pattern has and described transmittance part and the corresponding open region of the described first smooth half transmitting part; With
Use described second corrosion-resisting pattern to come etching described second smooth semi-transmissive film and described photomask as mask, then described second corrosion-resisting pattern is removed, formed described transmittance part, described shading light part, the described first smooth half transmitting part and the described second smooth half transmitting part thus.
2. method of making the level Four photomask, described level Four photomask comprise shading light part, transmittance part and first and second light half transmitting part with different transmittances, and described method comprises the steps:
Prepare photomask blank, wherein on transparent substrate, form first smooth semi-transmissive film and the photomask of making by the material that each other etching is had corrosion stability successively;
Form first corrosion-resisting pattern on the described photomask of described photomask blank, described first corrosion-resisting pattern has and described transmittance part and the corresponding open region of the described second smooth half transmitting part;
Use described first corrosion-resisting pattern to come the described photomask of etching, then described first corrosion-resisting pattern is divested, use described photomask to come the etching described first smooth semi-transmissive film afterwards as mask as mask;
On described transparent substrate and described photomask, form the second smooth semi-transmissive film;
Form second corrosion-resisting pattern on the described second smooth semi-transmissive film, described second corrosion-resisting pattern has and described transmittance part and the corresponding open region of the described first smooth half transmitting part; With
Use described second corrosion-resisting pattern to come etching described second smooth semi-transmissive film and described photomask as mask, then described second corrosion-resisting pattern is removed, formed described transmittance part, described shading light part, the described first smooth half transmitting part and the described second smooth half transmitting part thus.
3. method as claimed in claim 1 or 2, the wherein said second smooth semi-transmissive film is by can etched material is made by the etching identical with the etching of described photomask.
4. method as claimed in claim 1 or 2, the wherein said first smooth semi-transmissive film is made as the material of principal ingredient by containing molybdenum silicide, and in the described photomask and the described second smooth semi-transmissive film each is all made as the material of principal ingredient by containing chromium.5. method of making the level Four photomask, described level Four photomask comprise shading light part, transmittance part and first and second light half transmitting part with different transmittances, and described method comprises the steps:
Prepare photomask blank, wherein form the first smooth semi-transmissive film, second smooth semi-transmissive film and the photomask on transparent substrate successively, the described first smooth semi-transmissive film and described photomask are made by the material that the etching that makes the two to the material of the described second smooth semi-transmissive film has corrosion stability;
Form first corrosion-resisting pattern on the described photomask of described photomask blank, described first corrosion-resisting pattern has and described transmittance part and the corresponding open region of the described first smooth half transmitting part;
Use described first corrosion-resisting pattern to come the described photomask of etching as mask, the etching described second smooth semi-transmissive film divests described first corrosion-resisting pattern afterwards then;
Formation has second corrosion-resisting pattern with described transmittance part and the corresponding open region of the described second smooth half transmitting part; With
Use described second corrosion-resisting pattern to come the described photomask of etching and the described first smooth semi-transmissive film as mask, then described second corrosion-resisting pattern is removed, formed described transmittance part, described shading light part, the described first smooth half transmitting part and the described second smooth half transmitting part thus.
6. method of making the level Four photomask, described level Four photomask comprise shading light part, transmittance part and first and second light half transmitting part with different transmittances, and described method comprises the steps:
Prepare photomask blank, wherein form the first smooth semi-transmissive film, second smooth semi-transmissive film and the photomask on transparent substrate successively, the described first smooth semi-transmissive film and described photomask are made by the material that the etching that makes the two to the material of the described second smooth semi-transmissive film has corrosion stability;
Form first corrosion-resisting pattern on the described photomask of described photomask blank, described first corrosion-resisting pattern has and described transmittance part and the corresponding open region of the described first smooth half transmitting part;
Use described first corrosion-resisting pattern to come the described photomask of etching, then described first corrosion-resisting pattern is divested, use described photomask to come the etching described second smooth semi-transmissive film afterwards as mask as mask;
Formation has second corrosion-resisting pattern with described transmittance part and the corresponding open region of the described second smooth half transmitting part; With
Use described second corrosion-resisting pattern to come the described photomask of etching and the described first smooth semi-transmissive film as mask, then described second corrosion-resisting pattern is removed, formed described transmittance part, described shading light part, the described first smooth half transmitting part and the described second smooth half transmitting part thus.
7. as claim 5 or 6 described methods, the wherein said first smooth semi-transmissive film can be etched by identical etchant with described photomask.
8. method as claimed in claim 7, the wherein said second smooth semi-transmissive film is made as the material of principal ingredient by containing molybdenum silicide, and in the described first smooth semi-transmissive film and the described photomask each is all made as the material of principal ingredient by containing chromium.
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| JP2006043011 | 2006-02-20 | ||
| JP2006043011 | 2006-02-20 | ||
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| CN2010102024411A Division CN101866107B (en) | 2006-02-20 | 2007-02-16 | Four-gradation photomask, its manufacturing method and photomask blank |
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| CN101025564B true CN101025564B (en) | 2010-12-15 |
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| CN2010102024411A Active CN101866107B (en) | 2006-02-20 | 2007-02-16 | Four-gradation photomask, its manufacturing method and photomask blank |
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| KR (3) | KR101100522B1 (en) |
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| WO2009057660A1 (en) * | 2007-11-01 | 2009-05-07 | Ulvac Coating Corporation | Half-tone mask, half-tone mask blank and method for manufacturing half-tone mask |
| JP4714311B2 (en) * | 2008-02-28 | 2011-06-29 | Ｈｏｙａ株式会社 | Multi-tone photomask manufacturing method and pattern transfer method for thin film transistor substrate |
| JP2010044149A (en) * | 2008-08-11 | 2010-02-25 | Hoya Corp | Multi-gradation photomask, pattern transfer method, and manufacturing method of display unit using multi-gradation photomask |
| JP5121020B2 (en) * | 2008-09-26 | 2013-01-16 | Ｈｏｙａ株式会社 | Multi-tone photomask, photomask blank, and pattern transfer method |
| TW201030451A (en) * | 2008-09-30 | 2010-08-16 | Hoya Corp | Multi-tone photomask and method of manufacturing the same |
| KR101186890B1 (en) * | 2009-05-21 | 2012-10-02 | 엘지이노텍 주식회사 | Half tone mask and method of manufacturig the same |
| JP2011027878A (en) * | 2009-07-23 | 2011-02-10 | Hoya Corp | Multi-gradation photomask, method of manufacturing the same, and pattern transfer method |
| TWI422966B (en) * | 2009-07-30 | 2014-01-11 | Hoya Corp | Multitone photomask, photomask blank, method of manufacturing the multitone photomask, and pattern transfer method |
| KR101269062B1 (en) | 2012-06-29 | 2013-05-29 | 주식회사 에스앤에스텍 | Blankmask and method for fabricating photomask using the same |
| JP5635577B2 (en) * | 2012-09-26 | 2014-12-03 | Hoya株式会社 | Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method |
| KR102093101B1 (en) * | 2014-08-25 | 2020-04-14 | (주)에스앤에스텍 | Multi-gray scale photomask and manufacturing method thereof |
| JP6726553B2 (en) * | 2015-09-26 | 2020-07-22 | Hoya株式会社 | Photomask manufacturing method and display device manufacturing method |
| US20180160777A1 (en) | 2016-12-14 | 2018-06-14 | Black Brass, Inc. | Foot measuring and sizing application |
| KR102643553B1 (en) | 2017-01-06 | 2024-03-05 | 나이키 이노베이트 씨.브이. | System, platform and method for personalized shopping using an automated shopping assistant |
| KR20230031996A (en) | 2017-06-27 | 2023-03-07 | 나이키 이노베이트 씨.브이. | System, platform and method for personalized shopping using an automated shopping assistant |
| CN109188854B (en) * | 2018-10-18 | 2020-06-09 | 合肥鑫晟光电科技有限公司 | Mask plate, display substrate, manufacturing method of display substrate and display device |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI432885B (en) | 2014-04-01 |
| CN101866107A (en) | 2010-10-20 |
| KR101100522B1 (en) | 2011-12-29 |
| TW200736819A (en) | 2007-10-01 |
| CN101866107B (en) | 2013-08-07 |
| JP4642140B2 (en) | 2011-03-02 |
| KR101045450B1 (en) | 2011-06-30 |
| KR20100131404A (en) | 2010-12-15 |
| JP2010198042A (en) | 2010-09-09 |
| CN101025564A (en) | 2007-08-29 |
| KR20070083210A (en) | 2007-08-23 |
| KR20110074834A (en) | 2011-07-04 |
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