KR102093101B1 - Multi-gray scale photomask and manufacturing method thereof - Google Patents

Abstract

According to the present invention, a combination of three metal films or metal film patterns having the same or different mutual etching properties in consideration of the etching properties may be used to produce a multi-gradation photomask having three or more gradations by two resist film exposure and development processes.
The present invention sequentially forms a first semi-transmissive film, a light-shielding film and a first resist film pattern on a transparent substrate, and etching the exposed light-shielding film and the first semi-transmissive film portion to form a first semi-transmissive film pattern and a light-shielding film pattern. Forming, removing the first resist layer pattern, exposing a portion of the second semi-transmissive layer and the second semi-transmissive layer on the exposed portion of the transparent substrate and the laminated pattern of the first semi-transmissive layer pattern and the light-shielding layer pattern Forming a second resist film pattern, etching the exposed second semi-transmissive film portion to form a second semi-transmissive film pattern, and etching the light-shielding film pattern portion exposed by the second semi-transmissive film pattern The transparent substrate is exposed transmissive portion, the first semi-transmissive film pattern, the light-shielding film pattern, the second semi-transmissive film patterned light-shielding portion, the first semi-transmissive portion provided with a first semi-transmissive film pattern and the second semi-transmissive film pattern The second semi-transmissive part equipped with this And it can be made multi-gradation photomask.

Description

Multi-gray scale photomask and manufacturing method thereof

The present invention relates to a multi-gradation photomask and a method for manufacturing the same, and more specifically, a multi-gradation photo capable of realizing several levels of transmittance through one mask and reducing the number of exposure processes for forming a pattern. It relates to a mask and its manufacturing method.

Today, flat panel displays (hereinafter referred to as FPDs) such as liquid crystal displays (LCDs), organic light emitting devices (OLEDs), and plasma display panels (PDPs) and panel products for photovoltaic power generation have advanced market requirements and are highly functional. , As the application range is expanded as it is diversified, it is required to develop a manufacturing process technology that is cheaper and has higher productivity. In general, the FPD circuit pattern is formed by patterning a blank mask on which a multi-layered metal compound film is formed to produce a photomask having a transfer pattern and using a lithography process.

Existing binary type blank masks and photomasks can implement only two transmittance regions that function only for transmission and shading for exposure light used in a lithography process.

On the other hand, in recent years, the complexity of the FPD circuit pattern has increased, and in order to simplify the manufacturing process, multi-gradation photos capable of implementing three or more transmittance regions, rather than implementing only two existing transmittance regions through one mask. The demand for masks is increasing.

The multi-gradation photomask is manufactured by laminating and patterning at least three or more metal compound films having different mutual transmittances.

For example, when a multi-gradation photomask implements four light-transmitting regions of an exposure light, a transmission part, a light-shielding part, a first transmittance transmitting part, and a second transmittance transmitting part, the photomask and the metal compound film having at least one light-shielding function There is a need for two semipermeable metal compound membranes with different transmittances. The light-shielding and semi-transmissive metal compound film or pattern is formed through a process such as exposure and development using a resist pattern to a required transmittance region. At this time, in order to implement a four-tone photomask having four transmittance regions, a resist film pattern forming process is required through at least three exposure and development processes, and an etching process of a metal compound film using the resist film pattern is required. In addition, when the lower film is formed of a metal compound pattern, after the patterning of the lower film, a metal compound film is formed on the upper part through a cleaning process or the like, and the patterning process using the resist film pattern must be performed again.

Accordingly, the process is too complicated by an exposure and development process for a plurality of resist films to form a multi-gradation photomask, an etching process for a metal compound film, a cleaning process, a film formation process, etc. Alignment problems and particle problems occur.

The present invention provides a multi-gradation photomask and a method of manufacturing the same, which can further reduce the number of manufacturing processes, such as an exposure and development process for a resist film and an etching process for a metal compound film.

In addition, the present invention provides a multi-tone photomask capable of realizing at least three transmittance regions and a method for manufacturing the same.

The multi-gradation photomask manufacturing method according to the present invention is formed by sequentially forming a first semi-transmissive film, a light-shielding film and a first resist film pattern on a transparent substrate, and etching the exposed light-shielding film and the first semi-transmissive film portion A semi-transmissive film pattern and a light-shielding film pattern are formed, the first resist film pattern is removed, a second semi-transmissive film on the transparent substrate portion exposed to the laminated pattern of the first semi-transmissive film pattern and the light-shielding film pattern, and A second resist film pattern exposing a portion of the second semi-transmissive film is formed, and the exposed second semi-transmissive film portion is etched to form a second semi-transmissive film pattern, and the second semi-transmissive film pattern The exposed light-shielding film pattern portion is etched, and the transparent part is exposed, the first semi-transmissive film pattern, the light-shielding film pattern, and the second semi-transmissive film patterned light-shielding part, the first semi-transmissive film pattern is provided Semi-transmissive part and second semi-permeable A second semi-transmissive portion provided with a membrane pattern is formed.

The first semi-transmissive layer is formed of a material having different etching characteristics from the light-shielding layer, and the second semi-transmissive layer is formed of a material having the same or different etching characteristics as the light-shielding layer and the first semi-transmissive layer.

In addition, the multi-gradation photomask manufacturing method according to the present invention sequentially forms a first semi-transmissive film, a second semi-transmissive film, a light-shielding film and a first resist film pattern on a transparent substrate, and the exposed light-shielding film and the second half The second semi-transmissive film pattern and the light-shielding film pattern are formed by etching the transmissive film portion, the first resist film pattern is removed, and the stacked pattern of the light-shielding film pattern and the second semi-transmissive film pattern and the exposed first semi-transmissive film pattern A second resist layer pattern exposing a portion of the light-shielding layer pattern and a first semi-transmissive layer is formed on a portion, and a part of the exposed light-shielding layer pattern and the first semi-transmissive layer is simultaneously etched to form a first semi-transmissive layer pattern. In addition, the transparent substrate is exposed transmissive portion, the first semi-transmissive film pattern, the second semi-transmissive film pattern, the light-shielding portion is a light-shielding film pattern is laminated, the first semi-transmissive portion provided with a first semi-transmissive film pattern, the first semi-transmissive Membrane pattern and second semi-permeable membrane A second semi-transmissive portion in which patterns are stacked is formed.

The second semi-transmissive layer is formed of a material having different etching characteristics from the first semi-transmissive layer and the light-shielding layer, and the first semi-transmissive layer and the light-shielding layer are formed of a material having the same etching characteristics.

In addition, in the method of manufacturing a multi-gradation photomask according to the present invention, a light-shielding film and a first resist film pattern are sequentially formed on a transparent substrate, and the exposed light-shielding film part is etched to form a light-shielding film pattern, and the first resist film pattern And sequentially forming a first semi-transmissive film, a second semi-transmissive film, and a second resist film pattern exposing a portion of the first semi-transmissive film on the light-shielding film pattern and the exposed transparent substrate portion, and The second semi-transmissive layer pattern is formed by etching the exposed second semi-transmissive layer portion, and a light-shielding layer pattern, a first semi-transmissive layer, and a second light-transmissive layer patterned light-shielding portion and a first semi-transmissive layer are provided. A second semi-transmissive portion in which a first semi-transmissive portion, a first semi-transmissive layer and a second semi-transmissive layer pattern are stacked is formed.

The first semi-transmissive layer and the second semi-transmissive layer are formed of materials having different etching characteristics.

The light-shielding film, the first semi-transmissive film and the second semi-transmissive film include chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), Platinum (Pt), Manganese (Mn), Iron (Fe), Nickel (Ni), Cadmium (Cd), Zirconium (Zr), Magnesium (Mg), Lithium (Li), Selenium (Se), Copper (Cu), Yttrium (Y), Sulfur (S), Indium (In), Tin (Sn), Boron (B), Beryllium (Be), Sodium (Na), Tantalum (Ta), Hafnium (Hf), Niobium (Nb), silicon (Si), molybdenum silicide (MoSi) is formed of any one or more materials, or oxygen (O), nitrogen (N), carbon (C), boron (B) , Hydrogen (H) is formed to further include any one or more light elements.

The light-shielding film, the first semi-transmissive film and the second semi-transmissive film are formed of molybdenum silicide (MoSi) or a compound thereof and chromium (Cr) or a compound thereof.

It is provided on the light shielding film, and is formed by further including an antireflection film having the same or different etching characteristics as the light shielding film.

The first and second semi-transmissive films have a transmittance of 2% to 95% with respect to exposure light in a wavelength range of 365nm to 436nm, and are formed to have a thickness of 10Å to 2,000Å.

The light-shielding film has a thickness determined by the transmittance of the semi-transmissive film patterns stacked together to form the light-shielding portion, and is formed to have a thickness of 10Å to 2,000Å.

When one of the light-shielding film, the first semi-transmissive film and the second semi-transmissive film in contact with the first or second resist film is made of molybdenum silicide (MoSi) or a compound thereof, the first or second resist film And a mask layer provided between the lower layers of the abutting layer and serving as an etch mask of the lower layer.

The mask film is titanium (Ti), vanadium (V), cobalt (Co), nickel (Ni), zirconium (Zr), niobium (Nb), palladium (Pd), zinc (Zn), chromium (Cr), aluminum ( Al), manganese (Mn), cadmium (Cd), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten (Ta), W) and silicon (Si) is formed of at least one metal material, or formed of nitrogen (N), oxygen (O), and carbon (C) at least one material.

The mask film is formed to have a thickness of 10 mm 2 to 100 mm 2.

According to the present invention, a combination of three metal films or metal film patterns having the same or different mutual etching properties in consideration of etching properties may be used to produce a multi-gradation photomask having three or more gradations by two resist film exposure and development processes.

In addition, the present invention can reduce the number of photomask manufacturing processes as the resist film exposure and development process is performed twice, thereby simplifying the process and improving the alignment problem of the photomask pattern, particle problems, and the like.

1A to 1E are cross-sectional views showing a multi-gradation photomask and a method of manufacturing the same according to a first embodiment of the present invention.
2A to 2D are cross-sectional views showing a multi-gradation photomask and a method of manufacturing the same according to a second embodiment of the present invention.
3A to 3D are cross-sectional views showing a multi-gradation photomask and a method of manufacturing the same according to a third embodiment of the present invention.

Hereinafter, the present invention will be described in detail through examples of the present invention with reference to the drawings, but the examples are only used for the purpose of illustrating and explaining the present invention, and the present invention is described in the meaning limitation or the claims. It is not used to limit the scope of the. Therefore, one of ordinary skill in the art of the present invention will understand that various modifications and other equivalent embodiments are possible from the embodiment. Therefore, the true technical protection scope of the present invention should be determined by the technical matters of the claims.

1A to 1E are cross-sectional views showing a multi-gradation photomask according to the present invention and a method for manufacturing the same.

1A and 1B, a first semi-transmissive film 104 and a light-shielding film 106 are sequentially formed on a transparent substrate 102 and a first resist film 108 is applied on the light-shielding film 106. do.

Then, the first resist layer is patterned to form a first resist layer pattern 108a, and the lower portion of the light shield layer exposed by the etch mask is etched to form a light shield layer pattern 106a. do.

Next, the first semi-transmissive layer pattern 104a is formed by etching the lower semi-transmissive layer portion exposed by the light-shielding layer pattern 106a as an etch mask.

The transparent substrate 102 is a square transparent substrate having one side of 300 mm or more, and may be a synthetic quartz glass, a soda lime glass substrate, an alkali-free glass substrate, a low thermal expansion glass substrate, or the like.

The first semi-transmissive film 104 and the light-shielding film 106 are chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), Platinum (Pt), Manganese (Mn), Iron (Fe), Nickel (Ni), Cadmium (Cd), Zirconium (Zr), Magnesium (Mg), Lithium (Li), Selenium (Se), Copper (Cu), Yttrium (Y), Sulfur (S), Indium (In), Tin (Sn), Boron (B), Beryllium (Be), Sodium (Na), Tantalum (Ta), Hafnium (Hf), Niobium (Nb), silicon (Si), molybdenum silicide (MoSi) is formed of any one or more of the material, or the material is formed of oxygen (O), nitrogen (N), carbon (C), boron (B) , Hydrogen (H) is further formed of any one or more light elements.

The first semi-transmissive film 104 and the light-shielding film 106 are formed of materials having different etching characteristics from each other. For example, the first semi-transmissive film 104 may be formed of molybdenum silicide (MoSi) or a compound that further contains a light element, and the light-shielding film 106 may further contain chromium (Cr) or a light element. It may be formed of an included compound.

In addition, the first semi-transmissive film 104 may be formed of a compound further containing chromium (Cr) or light elements, and the light-shielding film 106 further includes molybdenum silicide (MoSi) or light elements therein. It can be formed of a compound. At this time, although not shown, a mask film may be further formed between the first resist film 108 and the light-blocking film 106 formed of a molybdenum silicide (MoSi) compound.

The mask film improves adhesion between the upper resist film and the lower metal film, and also serves as an etching mask for the lower metal film. Accordingly, the mask film is a material having an etch selectivity of 10 or more with the lower metal film. It is formed of. The mask film is titanium (Ti), vanadium (V), cobalt (Co), nickel (Ni), zirconium (Zr), niobium (Nb), palladium (Pd), zinc (Zn), chromium (Cr), aluminum (Al ), Manganese (Mn), cadmium (Cd), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten (W) ) And silicon (Si), or formed of at least one of nitrogen (N), oxygen (O), carbon (C), and boron (B). The mask film is formed of a chromium (Cr) -based compound such as Cr, CrO, CrN, CrC, CrON, CrCN, CrCO, CrCON, for example, when the lower metal film is made of molybdenum silicide (MoSi) or a compound thereof. It can be formed of a three-component metal compound such as a tantalum (Ta) -based compound and a MoTa-based compound containing two or more types of metals.

The mask film has a thickness of 10 mm 2 to 100 mm 2, and preferably has a thickness of 20 mm 2 to 50 mm 2, so that the loading effect can be reduced by reducing the thickness of the resist film for forming the mask film pattern, and a photomask produced therefrom CD characteristics such as pattern resolution, precision, CD MTT, CD uniformity, and CD linearity can be improved. In the present invention, when the lower portion of the resist film is formed of a metal film made of molybdenum silicide (MoSi) or a compound thereof, the metal film may be applied regardless of any code or name.

The first semi-transmissive film 104 has a transmittance of 2% to 95% with respect to exposure light in a wavelength range of 365 nm to 436 nm, a thickness of 10 mm to 2,000 mm, preferably 30 mm to 1,000 mm. The light-shielding film 106 can secure the required optical density according to the stacked structure with the semi-transmissive film patterns formed on the upper or lower portions thereof, thereby forming a film to have a certain thickness in connection with the transmittance of the semi-transmissive film patterns It can be, it has a thickness of 10Å ~ 2,000Å, preferably 100 바람직 ~ 1,000∼.

On the light-shielding film 106, although not shown, it has a function of an anti-reflection function or an etching mask for exposure light, and an anti-reflection film having the same or different etching characteristics as the light-shielding film may be further provided.

Referring to FIG. 1C, after removing the first resist layer pattern, the second semi-transmissive layer covers the stacked pattern of the first semi-transmissive layer pattern 104a and the light-shielding layer pattern 106a and the exposed transparent substrate 102 portion. The film 110 is formed.

The second semi-transmissive film 110 is chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), flat Titanium (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), Yttrium (Y), Sulfur (S), Indium (In), Tin (Sn), Boron (B), Beryllium (Be), Sodium (Na), Tantalum (Ta), Hafnium (Hf), Niobium (Nb), It is formed of any one or more of silicon (Si), molybdenum silicide (MoSi), or oxygen (O), nitrogen (N), carbon (C), boron (B), hydrogen (H) in the material. It is formed by further including any one or more of.

The second semi-transmissive film 110, for example, the first semi-transmissive film pattern 104a is formed of a molybdenum silicide (MoSi) or a compound further containing a light element thereon, the light-shielding film pattern 106a In the case where chromium (Cr) or a light element is further formed therein, the second semi-permeable layer 110 may be formed of molybdenum silicide (MoSi) or a compound that further contains light elements.

The second semi-transmissive film 110 is formed to have a different transmittance from the first semi-transmissive film pattern 104a to form a multi-gradation photomask. The second semi-transmissive film 110 has a transmittance of 2% to 95% with respect to exposure light in a wavelength range of 365 nm to 436 nm, a thickness of 10 mm to 2,000 mm, preferably 30 mm to 1,000 mm.

1D to 1E, after the second resist film pattern 112a is formed on the second semi-transmissive film, the second semi-transmissive film exposed below the second resist film pattern 112a as an etch mask The second semi-transmissive layer pattern 110a is formed by etching the portion.

Subsequently, a portion of the lower light-shielding layer pattern 106b exposed by the etching mask is etched from the second semi-transmissive layer pattern 110a.

Then, the second resist film pattern 112a is removed to remove the transparent substrate 102 from the exposed portion A, the first semi-transmissive film pattern 104a, the light-shielding film pattern 106b, and the second semi-transmissive film pattern ( Light-shielding portion (B) on which 110a) is stacked, first semi-transmissive portion (C) having a first semi-transmissive layer pattern (104a) and second semi-transmissive portion (D) having a second semi-transmissive layer pattern (110a) The production of the multi-gradation photomask 100 having the s is completed.

Referring to the above-described embodiments and drawings, the first semi-transmissive film 104 is formed of a material having different etching characteristics from the light-shielding film 106. In addition, the second semi-transmissive layer 110 may be formed of a material having the same or different etching characteristics as the light-shielding layer pattern 106a and the first semi-transmissive layer pattern 104a. That is, the material composition of the first semi-transmissive film 104, the light-shielding film 106, and the second semi-transmissive film 110 is a method for manufacturing a photomask. It can be implemented in various ways depending on whether the method is performed, and accordingly, the manufacturing method can also be implemented in various ways. For example, referring to FIG. 1B, the light shielding film is etched by using the first resist film pattern 108a as an etching mask to form only the light shield film pattern 106a, and after removing the first resist film pattern, the first semitransmissive film and When a second semi-transmissive film having the same etching characteristics is formed and a second resist film pattern is formed, when the second semi-transmissive film and the first semi-transmissive film are etched together, the first and second semi-transmissive films are the same. It can be formed of a material having an etching characteristic.

As described above, the present invention can form a four-tone photomask by two resist film exposure and development processes, which can also be formed by other methods.

2A to 2D are cross-sectional views showing a multi-gradation photomask and a method of manufacturing the same according to a second embodiment of the present invention.

Referring to FIG. 2A, a first semi-transmissive film 204, a second semi-transmissive film 210, and a light-shielding film 206 are sequentially formed on a transparent substrate 202, and the first semi-transmissive film 206 is formed on the transparent substrate 202. The resist film 208 is formed to form a multi-gradation blank mask.

The second semi-transmissive film 210 is formed of a material having different etching characteristics from the first semi-transmissive film 204 and the light-shielding film 206, and the first semi-transmissive film 204 and the light-shielding film 206 are mutually etched. It is formed from the same material. That is, the first semi-transmissive film 204 and the light-shielding film 206 may be formed of, for example, chromium (Cr) or a compound that further contains a light element, and the second semi-transmissive film 210 is molar. Libdenium silicide (MoSi) or a light element therein may be further formed of a compound.

Here, the first semi-transmissive film 204, the second semi-transmissive film 210, the light-shielding film 206 is the same as in the above-described first embodiment physical properties including optical, physical and chemical properties.

Referring to FIG. 2B, the first resist film is patterned to form a first resist film pattern 208a, and the light shield film 206a is etched by etching the lower light shield film exposed by the first resist film pattern 208a as an etch mask. To form.

Subsequently, the second semi-transmissive layer pattern 210a is formed by etching a portion of the second semi-transmissive layer below the light-shielding layer pattern 206a exposed as an etch mask.

Referring to FIG. 2C, after removing the first resist layer pattern, the layered pattern of the light-shielding layer pattern 206a and the second semi-transmissive layer pattern 210a and the exposed first semi-transmissive layer 204 may be covered. 2 Apply a resist film.

Then, the second resist film is exposed and developed to form a second resist film pattern 212a, and the first semi-transmissive film part and the light-shielding film pattern part of the exposed lower part are etched to etch the first semi-transmissive film pattern 204a and A light blocking film pattern 206b exposing the second semitransmissive film pattern 210a is formed. At this time, since the first semi-transmissive layer and the light-shielding layer pattern 206b are formed of a material having the same etching characteristics, it is possible to simultaneously etch in one etching process.

Referring to FIG. 2D, the second resist film pattern is removed to remove the transparent substrate 202 from the transparent portion A, the first semi-transmissive film pattern 204a, the second semi-transmissive film pattern 210a, and the light-shielding film pattern ( 206b) stacked light-shielding portion B, first semi-transmissive portion C provided with first semi-transmissive layer pattern 204a, first semi-transmissive layer pattern 204a and second semi-transmissive layer pattern 210a Manufacturing of the multi-gradation photomask 200 having the stacked second semi-transmissive portion D is completed.

As described above, the present invention forms a stacked combination of metal films using the etching properties of metal films by forming metal films having the same etching properties on the lower and upper parts, and forming metal films having different etching properties therebetween. Multi-gradation photomasks can be produced by film exposure and development processes.

In addition, the present invention can manufacture a multi-tone photomask without a completely transmissive portion through two resist film exposure and development processes.

3A to 3D are cross-sectional views showing a multi-gradation photomask and a method of manufacturing the same according to a third embodiment of the present invention.

Referring to FIG. 3A, a light shielding film and a first resist film are formed on the transparent substrate 302.

Subsequently, the first resist film pattern 308a is formed by exposing and developing the first resist film, and the exposed portion of the light shield film is etched using the first resist film pattern 308a as an etch mask to form the first light shield film pattern 306a. To form.

Referring to FIG. 3B, after removing the first resist layer pattern, the first semi-transmissive layer 304 and the second semi-transmissive layer 310 are covered to cover a portion of the light-shielding layer pattern 306a and the exposed transparent substrate 304. Form a film sequentially.

The first semi-transmissive layer 304 is formed of a material having a different etch characteristic from the second semi-transmissive layer 310 disposed on the upper portion, and a material having the same or different etch characteristics with the light-shielding layer pattern 306a disposed on the lower side. Can be formed with. That is, when the first semi-permeable film 304 is formed of a compound containing molybdenum silicide (MoSi) or a light element therein, the second semi-permeable film 310 has a chromium (Cr) or light element. It may be formed of a compound further included, the light-shielding film pattern 306a may be formed of chromium (Cr) or molybdenum silicide (MoSi) or a compound further containing a light element therein.

Here, the first semi-transmissive layer 304, the second semi-transmissive layer 310, and the light-shielding layer pattern 306a are the same as those in the above-described first and second embodiments in terms of physical properties including optical, physical, and chemical properties. .

3C and 3D, a second resist layer pattern 312a exposing a portion of the first semi-transmissive layer 304 is formed on the second semi-transmissive layer 310.

Subsequently, the second semi-transmissive layer pattern 310a is formed by etching the second semi-transmissive layer portion under the second resist layer pattern 312a exposed as an etch mask.

Then, by removing the second resist film pattern, the light-shielding film pattern 306b, the stacking of the first semi-transmissive film 304, or the light-shielding film pattern 306b, the first semi-transmissive film 304, and the second semi-transmissive film pattern ( A light-shielding portion (B) on which 310a) is stacked, a first semi-transmissive portion (C) having a first semi-transmissive layer 304, a first semi-transmissive layer 304 and a second semi-transmissive layer pattern 310a are stacked The manufacturing of the multi-gradation photomask 200 having the second semi-transmissive portion D is completed.

In the above, the present invention has been described using the most preferred embodiment, but the technical scope of the present invention is not limited to the range described in the above embodiment. It is apparent to those skilled in the art that it is possible to add various changes or improvements to the above-described embodiments. It is clear from the description of the claims that the form to which such a change or improvement was added can also be included in the technical scope of the present invention.

102, 202, 302: transparent substrate
104, 204, 304: first semi-permeable membrane
106, 206, 306: light shielding film
108, 208, 308: first resist film
110, 210, 310: second semi-permeable membrane
112, 212, 312: Second resist film

Claims (15)

Sequentially forming a first semi-transmissive film, a light-shielding film and a first resist film pattern on the transparent substrate;
Etching the portions of the light-shielding film and the first semi-transmissive film to form a first semi-transmissive film pattern and a light-shielding film pattern, and removing the first resist film pattern;
Forming a second semi-transmissive film and a second resist film pattern on a layered pattern of the first semi-transmissive film pattern and the light-shielding film pattern and the exposed transparent substrate portion;
Forming a second semi-transmissive layer pattern by etching a portion of the second semi-transmissive layer; And
The light-shielding film pattern portion exposed by the second semi-transmissive film pattern is etched to transmit the transparent part, the first semi-transmissive film pattern, the light-shielding film pattern, and the light-shielding part on which the second semi-transmissive film pattern is stacked. Forming a first semi-transmissive portion having a semi-transmissive layer pattern and a second semi-transmissive portion having a second semi-transmissive layer pattern,
The first semi-transmissive film is formed of a material having different etching characteristics from the light-shielding film, and the second semi-transmissive film is formed of a material having the same etch characteristics as the first semi-transmissive film. delete Sequentially forming a light shielding film and a first resist film pattern on a transparent substrate;
Forming a light shielding film pattern by etching a portion of the light shielding film, and removing the first resist film pattern;
Sequentially forming a first semi-transmissive film, a second semi-transmissive film and a second resist film pattern exposing a portion of the first semi-transmissive film on the light-shielding film pattern and the exposed transparent substrate portion; And
Etching the exposed second semi-transmissive film portion to form a second semi-transmissive film pattern, as well as a light-shielding film pattern, a first semi-transmissive film, a light-shielding portion laminated with a second semi-transmissive film pattern, and a first semi-transmissive film A first semi-transmissive portion, a first semi-transmissive layer and a second semi-transmissive layer pattern forming a second semi-transmissive portion,
The first semi-transmissive film and the second semi-transmissive film is a multi-tone photomask manufacturing method formed of a material having different etching characteristics. delete delete delete The method of claim 1 or 3,
The light-shielding film, the first semi-transmissive film and the second semi-transmissive film are chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), Platinum (Pt), Manganese (Mn), Iron (Fe), Nickel (Ni), Cadmium (Cd), Zirconium (Zr), Magnesium (Mg), Lithium (Li), Selenium (Se), Copper (Cu), Yttrium (Y), Sulfur (S), Indium (In), Tin (Sn), Boron (B), Beryllium (Be), Sodium (Na), Tantalum (Ta), Hafnium (Hf), Niobium (Nb), silicon (Si), molybdenum silicide (MoSi) is formed of any one or more materials, or oxygen (O), nitrogen (N), carbon (C), boron (B) , Hydrogen (H) of any one or more light elements, characterized in that formed by forming a multi-tone photomask manufacturing method. The method of claim 1 or 3,
The light-shielding film, the first semi-transmissive film and the second semi-transmissive film is a multi-tone photomask manufacturing method characterized in that it is formed of molybdenum silicide (MoSi) or a compound thereof and chromium (Cr) or a compound thereof. The method of claim 1 or 3,
A method for manufacturing a multi-tone photomask, which is provided on the light-shielding film, and further comprises an anti-reflection film having the same or different etching characteristics as the light-shielding film. The method of claim 1 or 3,
The first and second semi-transmissive films have multi-gradations characterized by having a transmittance of 2% to 95% with respect to exposure light in a wavelength range of 365nm to 436nm, having different transmittances, and having a thickness of 10Å to 2,000Å. Method of manufacturing photomask. The method of claim 1 or 3,
The light-shielding film has a thickness determined by the transmittance of the semi-transmissive film patterns stacked together to form the light-shielding portion, and is characterized in that it is formed to have a thickness of 10 ∼ to 2,000 도록. The method of claim 1 or 3,
When one of the light-shielding film, the first semi-transmissive film and the second semi-transmissive film in contact with the first or second resist film is made of molybdenum silicide (MoSi) or a compound thereof, the first or second resist film And a mask layer provided between the lower layer of the abutting layer and serving as an etch mask of the lower layer of the abutting layer. The method of claim 12,
The mask film is titanium (Ti), vanadium (V), cobalt (Co), nickel (Ni), zirconium (Zr), niobium (Nb), palladium (Pd), zinc (Zn), chromium (Cr), aluminum ( Al), manganese (Mn), cadmium (Cd), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten (Ta), W) and silicon (Si) formed of at least one metal material, or characterized in that the metal material further comprises at least one light element of nitrogen (N), oxygen (O), carbon (C) Multi-tone photomask manufacturing method. The method of claim 12,
The mask film is a multi-tone photomask manufacturing method characterized in that it is formed to have a thickness of 10 mm to 100 mm. A multi-gradation photomask formed by the method for manufacturing a multi-gradation photomask according to claim 1.

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