JP2013167884A - Gradation mask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a multi-gradation gradation mask that allows comparatively easy design of transmissivity, and is manufacturable with comparatively easy processes without a need of a plurality of etching techniques.SOLUTION: A gradation mask includes: a transparent substrate; a shading film formed in pattern on the transparent substrate; and a semitransparent film having a transmissivity adjustment function. The gradation mask further includes: a transparent region having only the transparent substrate; a shading region having a main pattern of the shading film therein on the transparent substrate; and a third semitransparent region having an auxiliary pattern of the shading film and a pattern of the semitransparent film provided on the transparent substrate. In the third semitransparent region, at least one of an opening and the auxiliary pattern of the shading film has a size equal to or smaller than a resolution limit, the semitransparent film is formed on the transparent substrate at an opening of the auxiliary pattern of the shading film, and the auxiliary pattern of the shading film is a slit.

Description

  The present invention relates to a gradation mask suitably used for halftone exposure in the manufacturing process of a display device or the like.

  For example, a reflow method or an ashing method is disclosed as a pattern forming method for reducing the number of lithography steps of a display device such as a liquid crystal display device or an organic electroluminescence display device (see, for example, Patent Document 1 and Patent Document 2). In addition, in the above-mentioned patent documents, a photomask (slit mask) having a minute slit below the resolution limit of exposure light, and a photomask (halftone mask) having a gradation with respect to the exposure light using a translucent film ) Is disclosed.

  In the slit mask, a general light shielding film such as a chromium film that substantially shields exposure light is used, and a fine slit below the resolution limit of the exposure machine is disposed in the light shielding film (see, for example, Patent Document 3). Since the slit of the mask has a size not larger than the resolution limit, the mask itself does not form an image on the resist, and the exposure light according to the size is transmitted to the area including the surrounding non-opening region. For this reason, the slit mask functions as if a translucent film exists in the area where the slit is formed and the area including the periphery of the area.

  In order to increase the number of gradations in this slit mask, the slit line width and pitch may be periodically changed. However, in the case of a large-sized slit mask that is applied to the manufacture of a display device, the line width of a fine slit is limited to about 1.0 μm with the current patterning technology, and it is difficult to finely adjust the transmittance. Met.

  The halftone mask uses a light-shielding film that substantially shields the exposure light and a semi-transparent film that transmits the exposure light at a desired transmittance. The light-transmissive area and the light-shielded area that does not transmit light. And a semi-transparent region in which the amount of transmitted light is adjusted (see, for example, Patent Document 4). In order to manufacture this halftone mask, for example, a dedicated mask blank in which a translucent film and a light shielding film are laminated on a transparent substrate is used, and mask pattern plate-making is performed.

  In order to increase the number of gradations in this halftone mask, the semitransparent film may be formed and patterned repeatedly. However, when performing patterning multiple times, it is necessary to consider the etching selectivity, so it is necessary to prepare multiple etching techniques (multiple devices, etchants, gases, etc.), which increases the number of facilities and processes. was there. Therefore, it was difficult to actually produce a multi-tone halftone mask.

Japanese Patent No. 3415602 JP 2000-66240 A JP 2002-196474 A JP 2002-189280 A

  The present invention has been made in view of the above-mentioned problems, and the multi-tone half that can be manufactured in a relatively simple process without requiring a plurality of etching techniques because the transmittance design is relatively easy. The main object is to provide a tone mask.

  To achieve the above object, the present invention is a gradation mask comprising a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function, A transmission region having only a transparent substrate, a light-shielding region in which the main pattern of the light-shielding film is provided on the transparent substrate, and only an auxiliary pattern of the semi-transparent film is provided on the transparent substrate. There is provided a gradation mask characterized in that at least one of the auxiliary pattern and the opening has a second semi-transparent region having a dimension equal to or smaller than a resolution limit.

  According to the present invention, since the gradation mask has the second semi-transparent region provided with only the auxiliary pattern of the semi-transparent film processed into a fine pattern, the auxiliary pattern and the opening of the semi-transparent film are provided. By adjusting at least one of the dimensions, the number, etc., it is possible to achieve a transmittance that could not be obtained with a conventional slit mask. That is, the gradation mask of the present invention has an advantage that the range of transmittance design is wide. In the second translucent region, multiple gradations can be achieved by adjusting the size, number, etc. of at least one of the auxiliary pattern and the opening of the translucent film. Therefore, it is not necessary to repeatedly form and pattern a translucent film in order to increase the number of gradations, and a multiple gradation mask can be obtained by a relatively simple process.

  In the above invention, the gradation mask is provided with the auxiliary pattern of the light shielding film and the pattern of the semitransparent film on the transparent substrate, and at least one of the auxiliary pattern of the light shielding film and the opening is a resolution limit. You may have the 3rd semi-transparent area | region which has the following dimensions and the said translucent film | membrane is formed on the said transparent substrate in the opening part of the auxiliary pattern of the said light shielding film. Thereby, further multi-gradation can be achieved.

  Further, the present invention is a gradation mask having a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function, the transmission region having only the transparent substrate A light shielding region in which the main pattern of the light shielding film is provided on the transparent substrate, an auxiliary pattern of the light shielding film and a pattern of the semitransparent film are provided on the transparent substrate, and an auxiliary pattern of the light shielding film and At least one of the openings has a third translucent region having a dimension less than or equal to the resolution limit, and the semitransparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film. A gradation mask characterized by the above is provided.

  According to the present invention, the gradation mask is provided with the auxiliary pattern of the light shielding film and the pattern of the semitransparent film processed into a fine pattern, and is semitransparent on the transparent substrate at the opening of the auxiliary pattern of the light shielding film. Since it has a third semi-transparent region where a film is formed, by adjusting the size and number of at least one of the auxiliary pattern and the opening of the light-shielding film, transmission that could not be obtained with a conventional slit mask Rate can be achieved. That is, the gradation mask of the present invention has an advantage that the range of transmittance design is wide. Further, in the third translucent region, it is possible to increase the number of gradations by adjusting the size and number of at least one of the auxiliary pattern of the light shielding film and the opening. Therefore, it is not necessary to repeatedly form and pattern a translucent film in order to increase the number of gradations, and a multiple gradation mask can be obtained by a relatively simple process.

  In the above-described invention, the translucent film may be formed over the entire third translucent region. This is because it is easy to pattern the translucent film in the third translucent region.

  The semitransparent film may be formed only in the opening of the auxiliary pattern of the light shielding film in the third semitransparent region.

  Furthermore, the gradation mask of the present invention preferably has a first semi-transparent region where only the main pattern of the semi-transparent film is provided on the transparent substrate. Only the main pattern of the semitransparent film is provided in the first semitransparent area, and only the auxiliary pattern of the semitransparent film is provided in the second semitransparent area, and the semitransparent film is processed into a predetermined pattern. Thus, a first semi-transparent region and a second semi-transparent region having different transmittances are obtained, and multi-gradation is possible. Therefore, it is not necessary to repeatedly form and pattern a translucent film in order to increase the number of gradations, and a multiple gradation mask can be obtained by a relatively simple process.

  In the gradation mask of the present invention, an auxiliary pattern of the light shielding film is provided on the transparent substrate, and at least one of the auxiliary pattern of the light shielding film and the opening has a dimension less than a resolution limit, You may have the 4th translucent area | region where the said transparent substrate is exposed in the opening part of the auxiliary pattern of a film | membrane. Thereby, further multi-gradation can be achieved.

  Furthermore, in the present invention, it is preferable that the auxiliary pattern has a slit shape.

  In order to achieve the above object, the present invention is a gradation mask comprising a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function, The semi-transparent film pattern is composed of a main pattern and a slit pattern having a slit width equal to or less than a resolution limit in exposure using the gradation mask, a transmission region having only the transparent substrate, and the transparent substrate A light-shielding region in which the pattern of the light-shielding film is provided, a first semi-transparent region in which only the main pattern of the semi-transparent film is provided on the transparent substrate, and a slit pattern of the semi-transparent film on the transparent substrate. And a second semi-transparent region provided only with a gradation mask.

According to the present invention, the pattern of the translucent film is composed of a main pattern and a slit pattern processed into a fine slit shape, and the transmittance of the translucent film is processed by processing the translucent film into a predetermined pattern. Different first and second translucent regions are obtained, and multi-gradation is possible. Therefore, it is not necessary to repeatedly form and pattern a translucent film in order to increase the number of gradations, and a multiple gradation mask can be obtained by a relatively simple process.
Moreover, the transmittance | permeability which was not obtained when the light shielding film was slitted can be achieved by slitting a semitransparent film and adjusting the slit width and pitch of the slit pattern of the semitransparent film. That is, the gradation mask of the present invention has an advantage that the range of transmittance design is wide.

  In the above invention, the pattern of the light shielding film comprises a main pattern and a slit pattern having a slit width equal to or less than a resolution limit in exposure using the gradation mask, and the light shielding region is formed on the transparent substrate. The area where the main pattern of the light shielding film is provided, and the gradation mask further includes a third semitransparent area where the slit pattern of the light shielding film and the main pattern of the semitransparent film are provided on the transparent substrate. You may have. Thereby, further multi-gradation can be achieved.

The present invention also provides a gradation mask for manufacturing a display device, characterized in that the above-described gradation mask is used for manufacturing a display device.
The gray scale mask for manufacturing a display device of the present invention can be a multi-tone mask whose transmittance changes stepwise in at least four stages, and the display device has different shapes, thicknesses, heights, etc. It can be suitably used when three or more types of members are formed at once.

The gradation mask of the present invention is provided with the second semi-transparent region provided with only the auxiliary pattern of the semi-transparent film, or the auxiliary pattern of the light-shielding film and the pattern of the semi-transparent film, and the opening portion of the auxiliary pattern of the light-shielding film. Has a third semi-transparent region in which a semi-transparent film is formed on a transparent substrate, so that it is possible to finely adjust the transmittance and to easily increase the number of gradations. Play.
In the present invention, since the pattern of the translucent film is composed of the main pattern and the slit pattern, it is possible to easily increase the number of gradations and to increase the range of transmittance design. Play.

It is a schematic sectional drawing which shows an example of the gradation mask of this invention. It is a figure which shows the example which forms a pattern using the gradation mask of this invention. It is a figure for demonstrating the advantage of the gradation mask of this invention. It is a schematic sectional drawing which shows the other example of the gradation mask of this invention. It is a schematic sectional drawing which shows the other example of the gradation mask of this invention. It is a schematic sectional drawing which shows the other example of the gradation mask of this invention. It is process drawing which shows an example of the manufacturing method of the gradation mask of this invention. It is process drawing which shows the other example of the manufacturing method of the gradation mask of this invention. It is process drawing which shows an example of the formation method of the pattern using the gradation mask of this invention. It is process drawing which shows the other example of the formation method of the pattern using the gradation mask of this invention. It is process drawing which shows the other example of the formation method of the pattern using the gradation mask of this invention. It is process drawing which shows the other example of the formation method of the pattern using the gradation mask of this invention. It is process drawing which shows the other example of the formation method of the pattern using the gradation mask of this invention. It is process drawing which shows the other example of the formation method of the pattern using the gradation mask of this invention. It is a figure for demonstrating the sub pixel in a color filter. 6 is a graph showing spectral spectra of semi-transparent films in Example 1 and Example 2. It is a schematic diagram which shows the other example of the gradation mask of this invention. It is a schematic diagram which shows an example of the auxiliary pattern of the semi-transparent film | membrane in the gradation mask of this invention. It is a schematic diagram which shows the other example of the auxiliary pattern of the semi-transparent film | membrane in the gradation mask of this invention. It is a schematic diagram which shows the other example of the auxiliary pattern of the semi-transparent film | membrane in the gradation mask of this invention. It is a schematic diagram which shows the other example of the auxiliary pattern of the semi-transparent film | membrane in the gradation mask of this invention. It is a schematic diagram which shows the other example of the gradation mask of this invention. It is a schematic diagram which shows an example of the 3rd translucent area | region in the gradation mask of this invention. It is a schematic diagram which shows the other example of the gradation mask of this invention. It is a schematic diagram which shows the other example of the gradation mask of this invention. It is a schematic diagram which shows the other example of the gradation mask of this invention. It is a schematic diagram which shows the other example of the gradation mask of this invention. It is a graph which shows the spectrum of the semi-transparent film in Example 3 and Comparative Example 2.

  Hereinafter, the gradation mask and the gradation mask for manufacturing a display device of the present invention will be described in detail.

A. Gradation Mask The gradation mask of the present invention can be divided into three embodiments according to the configuration of the light shielding film pattern and the semitransparent film pattern. In the following, each embodiment will be described separately.

I. First Embodiment A first embodiment of the gradation mask of the present invention is a gradation mask having a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function. A transparent region having only the transparent substrate, a light shielding region in which the main pattern of the light shielding film is provided on the transparent substrate, and only an auxiliary pattern of the semitransparent film is provided on the transparent substrate, At least one of the auxiliary pattern of the translucent film and the opening has a second translucent region having a dimension not more than a resolution limit.

  In addition, below the resolution limit means below the resolution limit in the exposure using the gradation mask.

The gradation mask of this embodiment will be described with reference to the drawings.
FIG. 17 is a schematic diagram showing an example of the gradation mask of this embodiment. FIG. 17A is a cross-sectional view taken along line AA in FIG. As illustrated in FIG. 17, the gradation mask 61 is obtained by forming a translucent film 64 and a light shielding film 63 in a pattern on a transparent substrate 62. In the gradation mask 61, a transmission region 71 having only a transparent substrate 62, a light shielding region 72 in which a main pattern 63 a of a light shielding film is provided on the transparent substrate 62, and a main pattern of a semitransparent film on the transparent substrate 62. The first semi-transparent region 73 provided with only 64a and the second semi-transparent region 74 provided only with the semi-transparent film auxiliary pattern 64b on the transparent substrate 62 are mixed. In the second semi-transparent region 74, the auxiliary pattern 64b and / or the opening 64c of the semi-transparent film has a dimension that is less than or equal to the resolution limit.

Since the gradation mask of this embodiment has the second semi-transparent region where only the auxiliary pattern of the semi-transparent film is provided, the auxiliary pattern of the semi-transparent film and / or the size and number of the openings are appropriately selected. Thus, the transmittance can be adjusted.
Here, the conventional slit mask is obtained by processing the light shielding film into a fine pattern. On the other hand, the gradation mask of this embodiment has a second semi-transparent region where only the auxiliary pattern of the semi-transparent film is provided. This translucent film has a transmittance adjusting function, has a higher transmittance than the light shielding film, and a lower transmittance than the transparent substrate. Therefore, by processing the translucent film into a fine pattern, it is possible to finely adjust the transmittance with respect to the transmittance of the transmissive region compared to processing the light shielding film into a fine pattern. is there. Therefore, in this embodiment, it is possible to finely adjust the transmittance so that a pattern having a thickness that cannot be formed by a conventional slit mask can be formed. Further, since the semi-transparent film is processed in a fine pattern in the second semi-transparent region, the transmittance of the transmissive region with respect to the transmittance of the first semi-transparent region as illustrated in FIG. Subtle adjustment of transmittance is possible. That is, the gradation mask of this embodiment has an advantage that the range of transmittance design is wide.

  Also, the size and number of the auxiliary patterns and / or openings of the semitransparent film are adjusted, and the size and number of the auxiliary patterns and / or openings of the semitransparent film are different, that is, the second semitransparent having different transmittance. By mixing a plurality of regions, a multi-tone mask can be obtained. Therefore, it is not necessary to repeatedly form and pattern a translucent film in order to increase the number of gradations, and a multiple gradation mask can be obtained by a relatively simple process.

  Furthermore, when a plurality of second semitransparent regions having different transmittances as described above are mixed, a multi-tone mask in which the transmittance changes stepwise in at least four stages can be obtained. For this reason, when the photosensitive resin layer is exposed using such a gradation mask, the degree of photoreaction of the photosensitive resin layer varies depending on the transmittance of each region. Three or more types of patterns having different thicknesses can be collectively formed. Therefore, the gradation mask of this embodiment can be used when three or more types of patterns are formed at once.

  As illustrated in FIG. 17, the gradation mask of this embodiment may further include a first semi-transparent region in addition to the transmissive region, the light-shielding region, and the second semi-transparent region. In the gradation mask illustrated in FIG. 17, by arranging the auxiliary pattern of the semitransparent film in the second semitransparent region, the transmittance of each region of the transmission region, the light shielding region, and the first semitransparent region is as follows. The transmittance of the second translucent region can be different. Since the transmittance is different in the transmissive region, the light-shielding region, the first semi-transparent region, and the second semi-transparent region, the above-described gradation mask is a multi-gradation mask in which the transmittance changes stepwise in at least four stages. .

  In the first semi-transparent region, the semi-transparent film pattern is the main pattern of the semi-transparent film, and in the second semi-transparent region, the semi-transparent film pattern is the auxiliary pattern of the semi-transparent film processed into a fine pattern. is there. Therefore, the first translucent region and the second translucent region having different transmittances can be obtained by processing the translucent film into a predetermined pattern. Therefore, even when the gradation mask further has the first semi-transparent region, it is not necessary to repeat the formation and patterning of the semi-transparent film for the multi-gradation, and the multi-gradation can be performed in a relatively simple process. A mask can be obtained.

  Furthermore, since the main pattern of the semitransparent film is formed in the first semitransparent region and the auxiliary pattern of the semitransparent film is formed in the second semitransparent region, the second translucent region is the first semitransparent region. The transmittance is higher than that of the transmission region, the light shielding region, the first semi-transparent region, and the second semi-transparent region. Therefore, when the photosensitive resin layer is exposed using the gradation mask, the degree of photoreaction of the photosensitive resin layer varies depending on the transmittance of each region. Three types of patterns having different values can be formed at once. Therefore, when the gradation mask of this embodiment has the said 1st translucent area | region, it can use suitably when forming three or more types of patterns collectively.

  Regarding the transmissivity characteristics, forming material, configuration, thickness, and film forming method of the semi-transparent film, the transmissivity characteristics of the light shielding film, forming material, thickness, film forming method, etc., and the transparent substrate and gradation mask manufacturing method Will be described in detail in the third embodiment, and a description thereof will be omitted here. Hereinafter, other configurations of the gradation mask of this embodiment will be described.

1. Second translucent region In the second translucent region in this embodiment, only the auxiliary pattern of the semitransparent film is provided on the transparent substrate, and at least one of the auxiliary pattern of the translucent film and the opening is below the resolution limit. This is an area having the dimensions of

  The auxiliary pattern of the translucent film in the present embodiment has an opening, and the auxiliary pattern and / or the opening of the semitransparent film has a dimension that is less than the resolution limit. A semi-transparent film portion formed in a fine pattern in the region.

In the second semi-transparent region, the auxiliary pattern of the semi-transparent film may have a dimension that is less than or equal to the resolution limit, and the opening of the auxiliary pattern of the semi-transparent film may have a dimension that is less than or equal to the resolution limit. Both the auxiliary pattern of the film and the opening may have dimensions that are less than the resolution limit. This is appropriately selected according to the desired transmittance of the second translucent region. For example, when the auxiliary pattern of the semitransparent film has a dimension below the resolution limit, the transmittance should be increased compared to the case where the opening of the auxiliary pattern of the semitransparent film has a dimension below the resolution limit. Can do.
Especially, it is preferable that the auxiliary pattern of a semi-transparent film | membrane is a dimension below a resolution limit. As described above, the transmissivity can be further increased by setting the auxiliary pattern of the semitransparent film to be a fine pattern and having a dimension below the resolution limit rather than the opening of the auxiliary pattern of the semitransparent film. .

The shape of the auxiliary pattern of the translucent film is not particularly limited, and for example, a slit shape as shown in FIGS. 18 (a) to 18 (e), or a circular shape as shown in FIGS. 19 (a) to (e). , A polygonal dot shape as shown in FIGS. 20A to 20E, a circular ring shape having a circular opening as shown in FIG. 21B, and FIGS. Various shapes such as a polygonal ring shape having a polygonal opening as shown in c) to (e) can be mentioned.
The shape of the opening of the auxiliary pattern of the semitransparent film includes various shapes similar to the shape of the auxiliary pattern of the semitransparent film.

  For example, when the shape of the auxiliary pattern of the translucent film is a slit or a dot, the auxiliary pattern of the semitransparent film may be a plurality of slits or dots arranged, or a single slit or dot. May be. The same applies to the case where the shape of the opening of the auxiliary pattern of the translucent film is slit or dot.

  In addition, as illustrated in FIGS. 18A to 18E and FIGS. 19A and 19B, when the auxiliary pattern 64b of the translucent film has a plurality of slits and dots arranged, The pitch is not particularly limited, and is appropriately adjusted according to the target transmittance of the second translucent region. The same applies to the case where the opening portion of the auxiliary pattern of the translucent film has a plurality of slits and dots arranged therein.

  In the second semi-transparent region in the third embodiment to be described later, the shape of the auxiliary pattern of the semi-transparent film is a slit shape, and the auxiliary pattern (slit pattern) of the semi-transparent film has a dimension less than the resolution limit. It will be a thing.

  As described above, the second translucent region is a region in which only the auxiliary pattern of the translucent film is provided on the transparent substrate. That is, the light-shielding film is not formed in the second semi-transparent region, and the main pattern of the semi-transparent film is not formed.

  In the second translucent region, there may be a plurality of regions in which at least one of the width and pitch of the auxiliary pattern of the translucent film is different. Thereby, further multi-gradation can be achieved.

  The transmittance of the second translucent region is not particularly limited as long as it is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, and higher than the transmittance of the first translucent region. It is appropriately selected depending on the pattern to be formed using the tone mask.

  The size and shape of the second translucent region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask of this embodiment. For example, the shape of the second translucent region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

2. First Translucent Region The gradation mask of this embodiment preferably has a first translucent region in which only the main pattern of the semitransparent film is provided on the transparent substrate. This is because by providing such a first semi-transparent region, it is possible to easily increase the number of gradations.

  The main pattern of the translucent film in this embodiment means a part of the translucent film that has a dimension equal to or larger than the resolution limit and is formed in the entire first translucent region.

  The size and shape of the main pattern of the semi-transparent film are appropriately adjusted according to the size and shape of the first semi-transparent region, the light shielding region, and the third semi-transparent region.

  The first semi-transparent region is a region where only the main pattern of the semi-transparent film is provided on the transparent substrate. That is, the light-shielding film is not formed in the first semi-transparent region, and the auxiliary pattern of the semi-transparent film is not formed.

  The transmittance of the first translucent region is not particularly limited as long as it is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, and lower than the transmittance of the second translucent region. It is appropriately selected depending on the pattern to be formed using the tone mask.

  The size and shape of the first translucent region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask of this embodiment. For example, the shape of the first translucent region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

3. Third Translucent Area The gradation mask of this embodiment is provided with a light shielding film auxiliary pattern and a semitransparent film pattern on a transparent substrate, and at least one of the light shielding film auxiliary pattern and the opening is the resolution limit. You may have the 3rd semi-transparent area | region which has the following dimensions and the semi-transparent film | membrane is formed on the transparent substrate in the opening part of the auxiliary pattern of a light shielding film. Thereby, further multi-gradation can be achieved.

  As illustrated in FIG. 22, the third semi-transparent region 75 includes a light-shielding film auxiliary pattern 63 b and a semi-transparent film pattern (a semi-transparent film main pattern 64 a in FIG. 22) provided on the transparent substrate 62. This is a region in which the auxiliary pattern 63b and / or the opening 63c of the film has a dimension less than the resolution limit, and the translucent film 64 is formed on the transparent substrate 62 in the opening 63c of the auxiliary pattern of the light shielding film. Here, FIG. 22A is a cross-sectional view taken along the line BB of FIG.

  The auxiliary pattern of the light shielding film in this embodiment has an opening, and the auxiliary pattern and / or the opening of the light shielding film has a dimension equal to or smaller than the resolution limit, and is within the third translucent region. The portion of the light shielding film formed in a fine pattern.

  In the third translucent region, the auxiliary pattern of the light shielding film and the pattern of the semitransparent film are provided on the transparent substrate, and the auxiliary pattern of the light shielding film and / or the opening has a dimension that is less than the resolution limit. If the translucent film is formed on the transparent substrate at the opening of the pattern, the pattern of the translucent film is not particularly limited. For example, as shown in FIGS. 23A to 23C, a semi-transparent film may be formed on the entire area of the third semi-transparent region 75 to form the main pattern 64a of the semi-transparent film. ), (e), a semi-transparent film may be formed only in the opening 63c of the auxiliary pattern of the light-shielding film in the third semi-transparent region 75 to form the auxiliary pattern 64b of the semi-transparent film.

The main pattern of the translucent film in the present embodiment has a dimension that is not less than the resolution limit, and as described above, only the part of the translucent film formed over the entire first translucent region. It also refers to the part of the translucent film formed over the entire third translucent region.
Further, the auxiliary pattern of the semitransparent film in the present embodiment has an opening, and the auxiliary pattern and / or the opening of the semitransparent film has a dimension that is less than the resolution limit. This refers not only to the portion of the semitransparent film formed in a fine pattern in the second semitransparent region, but also to the portion of the semitransparent film formed in a fine pattern in the third semitransparent region.

  Furthermore, the fact that the semitransparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film means that one of the transparent substrates is formed as illustrated in FIGS. 23 (a), (b), and (d). In addition to the case where a light-shielding film and a semi-transparent film are formed on the surface, and the semi-transparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light-shielding film, examples are shown in FIGS. A light-shielding film is formed on one surface of the transparent substrate, a semi-transparent film is formed on the other surface of the transparent substrate, and a semi-transparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light-shielding film. It is also included.

In the third translucent region, the auxiliary pattern of the light shielding film may have a dimension less than or equal to the resolution limit, and the opening of the auxiliary pattern of the light shielding film may have a dimension less than or equal to the resolution limit. Both the pattern and the opening may have dimensions that are less than the resolution limit. This is appropriately selected according to the transmittance of the target third translucent region. For example, in the case where the opening of the auxiliary pattern of the light shielding film has a dimension that is less than or equal to the resolution limit, the transmittance can be lowered compared to the case where the auxiliary pattern of the light shielding film has a dimension that is less than or equal to the resolution limit. .
Especially, it is preferable that the opening part of the auxiliary pattern of a light shielding film is a dimension below a resolution limit. This is because, as described above, the transmittance can be further lowered by setting the opening of the auxiliary pattern of the light shielding film to be a fine pattern and having a dimension below the resolution limit rather than the auxiliary pattern of the light shielding film.

  When the auxiliary pattern of the light shielding film has a dimension less than or equal to the resolution limit, the dimension of the auxiliary pattern of the light shielding film is not particularly limited as long as it is less than or equal to the resolution limit. It is adjusted appropriately according to the rate. Similarly, when the opening of the auxiliary pattern of the light shielding film has a dimension below the resolution limit, the dimension of the opening of the auxiliary pattern of the light shielding film is not particularly limited as long as it is below the resolution limit. It adjusts suitably according to the transmittance | permeability of the 3rd semi-transparent area | region.

Since the auxiliary pattern of the light shielding film and the shape of the opening are the same as the auxiliary pattern of the semitransparent film and the shape of the opening described in the section of the second semitransparent region, the description here Omitted.
The main pattern of the translucent film is the same as that described in the section of the first translucent area, and the auxiliary pattern and the opening of the translucent film are described in the section of the second translucent area. Since this is the same as that described above, description thereof is omitted here.

  In the third semi-transparent region in the third embodiment to be described later, the shape of the auxiliary pattern of the light shielding film is a slit shape, and the auxiliary pattern (slit pattern) of the light shielding film has a dimension equal to or lower than the resolution limit. A translucent film is formed over the entire third translucent region, and the pattern of the translucent film is the main pattern of the translucent film.

  The main pattern of the light shielding film is not formed in the third translucent region. As described above, when the translucent film is formed in the entire region of the third translucent area and the pattern of the translucent film is the main pattern of the translucent film, the translucent film is formed in the third translucent area. An auxiliary pattern is not formed. On the other hand, when the semi-transparent film is formed only in the opening of the auxiliary pattern of the light shielding film in the third semi-transparent area, and the semi-transparent film pattern is the auxiliary pattern of the semi-transparent film, the third semi-transparent area The main pattern of the semi-transparent film is not formed in.

  In the third translucent region, there may be a plurality of regions in which at least one of the width and the pitch of the light shielding auxiliary pattern is different. Thereby, further multi-gradation can be achieved.

  If the transmittance of the third translucent region is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, lower than the transmittance of the first translucent region, and lower than the transmittance of the second translucent region, The pattern is not limited, and is appropriately selected depending on the pattern formed using the gradation mask of this embodiment.

  The size and shape of the third translucent region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask of this embodiment. For example, the shape of the third translucent region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

4). Fourth translucent region The gradation mask of this embodiment is provided with an auxiliary pattern of a light shielding film on a transparent substrate, and at least one of the auxiliary pattern of the light shielding film and the opening has a dimension equal to or less than a resolution limit, You may have the 4th semi-transparent area | region where the transparent substrate is exposed in the opening part of the auxiliary pattern of a light shielding film. Thereby, further multi-gradation can be achieved.

  As illustrated in FIG. 24, in the fourth translucent region 76, a light shielding film auxiliary pattern 63b is provided on the transparent substrate 62, and the light shielding film auxiliary pattern 63b and / or the opening 63c has a dimension equal to or smaller than the resolution limit. The transparent substrate 62 is exposed in the opening 63c of the auxiliary pattern of the light shielding film. Here, FIG. 24A is a cross-sectional view taken along the line CC of FIG.

  In addition, the auxiliary pattern of the light shielding film in the present embodiment has an opening, and the auxiliary pattern and / or the opening of the light shielding film has a dimension equal to or smaller than the resolution limit. It refers not only to the portion of the light shielding film formed in a fine pattern within the semitransparent region, but also to the portion of the light shielding film formed in a fine pattern within the fourth semitransparent region.

  In the fourth translucent region, the auxiliary pattern of the light shielding film may have a dimension less than or equal to the resolution limit, and the opening of the auxiliary pattern of the light shielding film may have a dimension less than or equal to the resolution limit. Both the pattern and the opening may have dimensions that are less than the resolution limit. This is appropriately selected according to the desired transmittance of the fourth translucent region. For example, in the case where the opening of the auxiliary pattern of the light shielding film has a dimension that is less than or equal to the resolution limit, the transmittance can be lowered compared to the case where the auxiliary pattern of the light shielding film has a dimension that is less than or equal to the resolution limit. .

  When the auxiliary pattern of the light shielding film has a dimension less than or equal to the resolution limit, the dimension of the auxiliary pattern of the light shielding film is not particularly limited as long as it is less than or equal to the resolution limit. It is adjusted appropriately according to the rate. Similarly, when the opening of the auxiliary pattern of the light shielding film has a dimension below the resolution limit, the dimension of the opening of the auxiliary pattern of the light shielding film is not particularly limited as long as it is below the resolution limit. It adjusts suitably according to the transmittance | permeability of a 4th translucent area | region.

  Since the auxiliary pattern of the light shielding film and the shape of the opening are the same as the auxiliary pattern of the semitransparent film and the shape of the opening described in the section of the second semitransparent region, the description here Omitted.

  Further, the transparent substrate is exposed at the opening portion of the auxiliary pattern of the light shielding film, as illustrated in FIG. 24, both surfaces of the transparent substrate 62 are exposed at the opening portion 63c of the auxiliary pattern of the light shielding film. If you are. For example, as shown in FIGS. 23C and 23E, the case where only one surface of the transparent substrate 62 is exposed at the opening 63c of the auxiliary pattern of the light shielding film is not included.

  In the fourth translucent region, an auxiliary pattern of the light shielding film is provided on the transparent substrate, and at least one of the auxiliary pattern of the light shielding film and the opening has a dimension less than or equal to the resolution limit, and the opening of the auxiliary pattern of the light shielding film If the transparent substrate is exposed at the part, a pattern of a semitransparent film may be formed on the transparent substrate. For example, as shown in FIG. 24, a semi-transparent film auxiliary pattern 64b may be formed in the fourth semi-transparent region 76 at the same position as the light-shielding film auxiliary pattern 63b.

  Note that the semi-transparent film auxiliary pattern in the present embodiment has an opening, and the semi-transparent film auxiliary pattern and / or the opening has a dimension equal to or lower than the resolution limit, as described above. Not only the portion of the semitransparent film formed in a fine pattern in the second semitransparent region, the portion of the semitransparent film formed in a fine pattern in the third semitransparent region, It also refers to a portion of a semi-transparent film formed in a fine pattern within a transparent region.

  Since the auxiliary pattern and the opening of the semitransparent film are the same as those described in the section of the second semitransparent region, description thereof is omitted here.

  In the fourth translucent region in the third embodiment to be described later, the shape of the auxiliary pattern of the light shielding film is a slit shape, and the auxiliary pattern (slit pattern) of the light shielding film has a dimension less than the resolution limit. Become.

  In the fourth translucent region, the main pattern of the light shielding film and the main pattern of the semitransparent film are not formed.

  In the fourth translucent region, there may be a plurality of regions in which at least one of the width and pitch of the light shielding auxiliary pattern is different. Thereby, further multi-gradation can be achieved.

  If the transmittance of the fourth translucent region is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, lower than the transmittance of the first translucent region, and lower than the transmittance of the second translucent region, The pattern is not limited, and is appropriately selected depending on the pattern formed using the gradation mask of this embodiment.

  The size and shape of the fourth translucent region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask of this embodiment. For example, the shape of the fourth translucent region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

5. Light-shielding region The light-shielding region in this embodiment is a region where a main pattern of a light-shielding film is provided on a transparent substrate.
In addition, the main pattern of the light shielding film in this embodiment has a dimension equal to or greater than the resolution limit and refers to a portion of the light shielding film formed over the entire light shielding region.

  In the light shielding region, it is only necessary that at least the main pattern of the light shielding film is formed on the transparent substrate.For example, only the main pattern of the light shielding film may be formed, and the main pattern of the light shielding film and the pattern of the semitransparent film are included. It may be formed. In this case, the pattern of the translucent film is not particularly limited.

  The size and shape of the light shielding region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask of the present embodiment. For example, the shape of the light shielding region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

6). Transmission area The transmission area in this embodiment is an area having only a transparent substrate. That is, neither the light-shielding film nor the translucent film is formed in the transmission region.

  The size and shape of the transmissive region are not particularly limited, and are appropriately adjusted according to the use of the gradation mask of this embodiment. For example, the shape of the transmission region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

7). Gradation mask The gradation mask of this embodiment is one in which a light-shielding film and a semi-transparent film are formed in a pattern on a transparent substrate, and has the above-described transmission region, light-shielding region, and second semi-transparent region. The order of stacking the transparent substrate, the light shielding film, and the semitransparent film is not particularly limited. For example, the transparent substrate, the light shielding film and the semi-transparent film may be laminated in this order, the transparent substrate, the semi-transparent film and the light shielding film may be laminated in this order, or the semi-transparent film, the transparent substrate and the light shielding film may be laminated in this order. May be.

In this embodiment, a low reflection layer may be formed on the light shielding film. This is because by providing the low reflection layer, halation can be prevented when the gradation mask is used.
In addition, since it describes in the 3rd embodiment mentioned later about a low reflection layer, description here is abbreviate | omitted.

  In the gradation mask of this embodiment, the transmittance changes in three steps or more. The gradation mask is not limited to a three-gradation gradation mask, but can be changed to three gradations or more by periodically changing the size of the auxiliary pattern or the opening of the semi-transparent film in the second semi-transparent region. It is possible to use a multi-tone gradation mask.

  In the present embodiment, a multi-tone mask having four or more tones can be obtained by combining the main pattern and auxiliary pattern of the translucent film and the auxiliary pattern of the light shielding film. For example, as shown in FIGS. 22 and 24, the gradation mask 61 includes a first translucent area 73, a third translucent area 75, a first translucent area 74, a light shielding area 72, and a second translucent area 74. By having the four translucent regions 76, it is possible to increase the number of gradations. In this case, the gradation mask may include, for example, a transmissive region, a light-shielding region, a second semi-transparent region, and a first semi-transparent region, and the transmissive region, the light-shielding region, the second semi-transparent region, and the first semi-transparent region. It may have a transparent region and a third semi-transparent region, and may have a transmissive region, a light-shielding region, a second semi-transparent region, and a fourth semi-transparent region. A translucent region, a fourth translucent region, and a third translucent region may be included, and a transmissive region, a light shielding region, a second translucent region, a first translucent region, a fourth translucent region, and a third semitransparent region may be included. It may have a transparent region.

  The use and size of the gradation mask will be described in a third embodiment to be described later, and will not be described here.

II. Second Embodiment A second embodiment of the gradation mask of the present invention is a gradation mask having a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function. A transparent region having only the transparent substrate, a light shielding region in which the main pattern of the light shielding film is provided on the transparent substrate, an auxiliary pattern of the light shielding film and the semitransparent film on the transparent substrate. A pattern is provided, and at least one of the auxiliary pattern of the light-shielding film and the opening has a dimension not more than a resolution limit, and the translucent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light-shielding film. And a third translucent region that is formed.

  In addition, below the resolution limit means below the resolution limit in the exposure using the gradation mask.

The gradation mask of this embodiment will be described with reference to the drawings.
FIG. 25 is a schematic diagram showing an example of the gradation mask of this embodiment. FIG. 25A is a cross-sectional view taken along the line DD in FIG. As illustrated in FIG. 25, the gradation mask 61 is obtained by forming a translucent film 64 and a light shielding film 63 on a transparent substrate 62 in a pattern. In the gradation mask 61, a transmission region 71 having only a transparent substrate 62, a light shielding region 72 in which a main pattern 63 a of a light shielding film is provided on the transparent substrate 62, and a main pattern of a semitransparent film on the transparent substrate 62. A first semi-transparent region 73 provided with only 64a, and a third light-shielding film auxiliary pattern 63b and a semi-transparent film pattern (semi-transparent film main pattern 64a in FIG. 25) provided on the transparent substrate 62. A semi-transparent region 75 is mixed. In the third translucent region 75, the auxiliary pattern 63b and / or the opening 63c of the light-shielding film has a dimension that is less than the resolution limit.

The gradation mask of this embodiment is provided with a light-shielding film auxiliary pattern and a semi-transparent film pattern, and a third semi-transparent film is formed on the transparent substrate at the opening of the light-shielding film auxiliary pattern. Since it has a region, the transmittance can be adjusted by appropriately selecting, for example, the auxiliary pattern of the light shielding film and / or the size and number of openings.
Here, the conventional slit mask is obtained by processing the light shielding film into a fine pattern. On the other hand, the gradation mask of this embodiment is provided with the auxiliary pattern of the light shielding film and the pattern of the semitransparent film, and the semitransparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film. A third translucent region is included. This translucent film has a transmittance adjusting function, has a higher transmittance than the light shielding film, and a lower transmittance than the transparent substrate. For this reason, the light shielding film is processed into a fine pattern, and a semi-transparent film is formed in the opening of the light shielding film. It is possible to finely adjust the transmittance with respect to the transmittance. Therefore, in this embodiment, it is possible to finely adjust the transmittance so that a pattern having a thickness that cannot be formed by a conventional slit mask can be formed. Further, since the light-shielding film is processed into a fine pattern in the third semi-transparent region, and the semi-transparent film is formed in the opening of the light-shielding film, it is compared with the first semi-transparent region as illustrated in FIG. However, it is possible to finely adjust the transmittance with respect to the transmittance of the light shielding region. That is, the gradation mask of this embodiment has an advantage that the range of transmittance design is wide.

  Further, the size and number of auxiliary patterns and / or openings of the light-shielding film are adjusted, and the third semi-transparent regions having different transmittances, that is, different in size and number of auxiliary patterns and / or openings of the light-shielding film. By mixing a plurality of masks, a multi-tone mask can be obtained. Therefore, it is not necessary to repeatedly form and pattern a translucent film in order to increase the number of gradations, and a multiple gradation mask can be obtained by a relatively simple process.

  Further, when a plurality of third semi-transparent regions having different transmittances are mixed, a multi-tone mask in which the transmittance changes stepwise in at least four stages can be obtained. For this reason, when the photosensitive resin layer is exposed using such a gradation mask, the degree of photoreaction of the photosensitive resin layer varies depending on the transmittance of each region. Three or more types of patterns having different thicknesses can be collectively formed. Therefore, the gradation mask of this embodiment can be used when three or more types of patterns are formed at once.

  As illustrated in FIG. 25, the gradation mask of this embodiment may further include a first semi-transparent region in addition to the transmissive region, the light-shielding region, and the third semi-transparent region. In the gray scale mask illustrated in FIG. 25, the auxiliary pattern of the light-shielding film and the pattern of the semi-transparent film are arranged in the third semi-transparent region, whereby the transmission of each region of the transmission region, the light-shielding region, and the first semi-transparent region. The transmittance of the third translucent region can be different from the rate. Since the transmittance is different between the transmissive region, the light-shielding region, the first semi-transparent region, and the third semi-transparent region, the above-described gradation mask is a multi-gradation mask in which the transmittance changes stepwise in at least four stages. .

  A main pattern of a light shielding film is provided in the light shielding region, a main pattern of a semitransparent film is provided in the first semitransparent region, and an auxiliary pattern of the light shielding film and a semitransparent film are provided in the third semitransparent region. A pattern is provided. Therefore, by processing the light-shielding film and the semi-transparent film into predetermined patterns, it is possible to obtain a light-shielding area, a first semi-transparent area, and a third semi-transparent area having different transmittances. Therefore, even when the gradation mask further has the first semi-transparent region, it is not necessary to repeat the formation and patterning of the semi-transparent film for the multi-gradation, and the multi-gradation can be performed in a relatively simple process. A mask can be obtained.

  Further, since the main pattern of the semi-transparent film is formed in the first semi-transparent region, and the auxiliary pattern of the light shielding film and the pattern of the semi-transparent film are formed in the third semi-transparent region, the third semi-transparent region is The transmittance is lower than that of the first translucent region, and the transmissivity is different between the transmissive region, the light shielding region, the first translucent region, and the third translucent region. Therefore, when the photosensitive resin layer is exposed using the gradation mask, the degree of photoreaction of the photosensitive resin layer varies depending on the transmittance of each region. Three types of patterns having different values can be formed at once. Therefore, when the gradation mask of this embodiment has the said 1st translucent area | region, it can use suitably when forming three or more types of patterns collectively.

  Regarding the transmissivity characteristics, forming material, configuration, thickness, and film forming method of the semi-transparent film, the transmissivity characteristics of the light shielding film, forming material, thickness, film forming method, etc., and the transparent substrate and gradation mask manufacturing method Will be described in detail in the third embodiment, and a description thereof will be omitted here. Further, since the light shielding region and the transmissive region are the same as those described in the first embodiment, description thereof is omitted here. Hereinafter, another configuration of the gradation mask of this embodiment will be described.

1. Third translucent region In the third translucent region in this embodiment, an auxiliary pattern of a light shielding film and a pattern of a semitransparent film are provided on a transparent substrate, and at least one of the auxiliary pattern of the light shielding film and the opening portion is solved. This is a region having a dimension equal to or smaller than the image limit and having a translucent film formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film.
The third translucent region is the same as that described in the first embodiment, and a description thereof is omitted here.

2. First Translucent Area As shown in FIG. 25, the gradation mask of this embodiment preferably has a first translucent area 73 in which only a main pattern 64a of a semitransparent film is provided on a transparent substrate 62. . This is because by providing such a first semi-transparent region, it is possible to easily increase the number of gradations.
The first translucent region is the same as that described in the first embodiment, and a description thereof is omitted here.

3. Second Semi-Transparent Area As shown in FIG. 26, the gradation mask of this embodiment is provided with only the semi-transparent film auxiliary pattern 64b on the transparent substrate 62, and the semi-transparent film auxiliary pattern 64b and the opening 64c. At least one of the above may have a second translucent region 74 having a dimension less than or equal to the resolution limit. Here, FIG. 26 (a) is a cross-sectional view taken along the line EE of FIG. 26 (b). Thereby, further multi-gradation can be achieved.
The second translucent region is the same as that described in the first embodiment, and a description thereof is omitted here.

4). Fourth Translucent Area As shown in FIG. 27, the gradation mask of this embodiment is provided with a light shielding film auxiliary pattern 63b on a transparent substrate 62, and at least one of the light shielding film auxiliary pattern 63b and the opening 63c. One of them may have a fourth translucent region 76 having a dimension that is less than or equal to the resolution limit and in which the transparent substrate 62 is exposed at the opening 63c of the auxiliary pattern of the light shielding film. Here, Fig.27 (a) is the FF sectional view taken on the line of FIG.27 (b). Thereby, further multi-gradation can be achieved.
The fourth translucent region is the same as that described in the first embodiment, and a description thereof is omitted here.

5. Gradation mask The gradation mask of this embodiment is one in which a light shielding film and a semitransparent film are formed in a pattern on a transparent substrate, and has the above-described transmission region, light shielding region, third semitransparent region, and the like. The order of stacking the transparent substrate, the light shielding film, and the semitransparent film is not particularly limited. For example, the transparent substrate, the light shielding film and the semi-transparent film may be laminated in this order, the transparent substrate, the semi-transparent film and the light shielding film may be laminated in this order, or the semi-transparent film, the transparent substrate and the light shielding film may be laminated in this order. May be.

In this embodiment, a low reflection layer may be formed on the light shielding film. This is because by providing the low reflection layer, halation can be prevented when the gradation mask is used.
In addition, since it describes in the 3rd embodiment mentioned later about a low reflection layer, description here is abbreviate | omitted.

  In the gradation mask of this embodiment, the transmittance changes in three steps or more. The gradation mask is not limited to a three-gradation gradation mask, but can be changed to three gradations or more by periodically changing the size of the auxiliary pattern or opening of the semi-transparent film in the third semi-transparent region. It is possible to use a multi-tone gradation mask.

  In the present embodiment, a multi-tone mask having four or more tones can be obtained by combining the main pattern and auxiliary pattern of the translucent film and the auxiliary pattern of the light shielding film. For example, as shown in FIGS. 26 and 27, the gradation mask 61 includes a first translucent area 73, a second translucent area 74, a first translucent area 75, a light-shielding area 72, and a third translucent area 75. By having the four translucent regions 76, it is possible to increase the number of gradations. In this case, the gradation mask may include, for example, a transmissive region, a light-shielding region, a third semi-transparent region, and a first semi-transparent region, and the transmissive region, the light-shielding region, the third semi-transparent region, and the first semi-transparent region. It may have a transparent region and a second semi-transparent region, and may have a transmissive region, a light-shielding region, a third semi-transparent region, and a fourth semi-transparent region. A translucent region, a fourth translucent region, and a second translucent region may be included, and a transmissive region, a light shielding region, a third translucent region, a first translucent region, a fourth translucent region, and a second semitransparent region may be included. It may have a transparent region.

  The use and size of the gradation mask will be described in a third embodiment to be described later, and will not be described here.

III. Third Embodiment A third embodiment of the gradation mask of the present invention is a gradation mask having a transparent substrate, a light shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function. The pattern of the translucent film is composed of a main pattern and a slit pattern having a slit width equal to or less than a resolution limit in exposure using the gradation mask, and a transmission region having only the transparent substrate, A light shielding region in which the pattern of the light shielding film is provided on the transparent substrate, a first semitransparent region in which only the main pattern of the semitransparent film is provided on the transparent substrate, and the semitransparent on the transparent substrate. And a second translucent region provided only with a slit pattern of the film.

The gradation mask of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic sectional view showing an example of the gradation mask of the present invention. As illustrated in FIG. 1, the gradation mask 1 includes a light shielding film 3 and a semitransparent film 4 formed in a pattern on a transparent substrate 2. The pattern of the translucent film 4 is composed of a main pattern 4a and a slit pattern 4b having a slit width less than the resolution limit. In the gradation mask 1, a transparent region 11 having only a transparent substrate 2, a light shielding region 12 in which a pattern of a light shielding film 3 and a main pattern 4 a of a semitransparent film are provided on the transparent substrate 2, and a transparent substrate 2. The first semitransparent region 13 in which only the main pattern 4a of the semitransparent film is provided and the second semitransparent region 14 in which only the slit pattern 4b of the semitransparent film is provided on the transparent substrate 2 are mixed.

  In the present invention, the first translucent region and the second translucent region are formed by disposing a main pattern of the translucent film in the first translucent region and forming a slit pattern of the translucent film in the second translucent region. And the transmittance can be different. Since the transmittance is different between the transmission region, the light shielding region, the first semi-transparent region, and the second semi-transparent region, the gradation mask of the present invention is a multi-tone mask in which the transmittance changes stepwise in at least four stages. can do.

  The pattern of the translucent film is composed of a main pattern and a slit pattern processed into a fine slit shape. By processing the translucent film into a predetermined pattern, the first translucent region having a different transmittance is obtained. And a second translucent region can be obtained. Therefore, it is not necessary to repeatedly form and pattern a translucent film in order to increase the number of gradations, and a multiple gradation mask can be obtained by a relatively simple process.

Next, FIG. 2 shows an example in which the photosensitive resin layer is exposed using the gradation mask 1 shown in FIG. In the transmission region 11 of the gradation mask 1, the exposure light passes through the transparent substrate 2 as it is. In the first translucent region 13, since the translucent film 4 has a transmittance adjusting function, the exposure light is transmitted with a predetermined transmittance. Furthermore, since the slit pattern 4b of the semi-transparent film is formed in the second semi-transparent region 14 with a slit width not more than the resolution limit, the exposure light is transmitted with a higher transmittance than the first semi-transparent region 13. . Thus, since the transmittance of the exposure light is different between the transmissive region 11, the first semi-transparent region 13, and the second semi-transparent region 14, the photo-curing reaction of the photosensitive resin layer according to the transmittance of each region. The three types of patterns 30a, 30b and 30c having different thicknesses can be collectively formed by developing after exposure.
Thus, the gradation mask of the present invention can be suitably used when three or more types of patterns are collectively formed.

Furthermore, the gradation mask of the present invention has the following advantages compared to the conventional slit mask.
A gradation mask 101 illustrated in FIG. 3 is obtained by forming a light shielding film 103 and a semitransparent film 104 in a pattern on a transparent substrate 102. The pattern of the light shielding film 103 is composed of a main pattern 103a and a slit pattern 103b having a slit width less than or equal to the resolution limit. Similarly, the pattern of the translucent film 104 is less than or equal to the main pattern 104a and less than the resolution limit. The slit pattern 104b has a slit width. In the gradation mask 101, a transmissive region 111 having only the transparent substrate 102, a light shielding region 112 in which the main pattern 103 a of the light shielding film is provided on the transparent substrate 102, and a slit pattern 103 b of the light shielding film on the transparent substrate 102. One first region 113 provided, one second region 114 provided with three light-shielding film slit patterns 103b on the transparent substrate 102, and one semi-transparent film slit pattern 104b provided on the transparent substrate 102 The third region 115 is mixed with the fourth region 116 in which the main pattern 104a of the semitransparent film and the slit pattern 103b of the light shielding film are provided on the transparent substrate 102.

  In the conventional slit mask, the transmittance can be adjusted by changing the slit width and pitch of the slit pattern 103 b of the light shielding film as in the first region 113 and the second region 114. For this reason, in addition to the transmissive region 111 and the light shielding region 112, by providing regions where the slit pattern of the light shielding film, such as the first region 113 and the second region 114, is provided, the number of gradations is increased. In the example shown in FIG. 3, since the transmittance is different between the transmission region 111, the first region 113, and the second region 114, the degree of the photo-curing reaction of the photosensitive resin layer varies depending on the transmittance of each region. By developing after exposure, three types of patterns 130a, 130b, and 130c having different thicknesses can be collectively formed.

  However, in the case of a large mask used for manufacturing a display device, the line width of a fine pattern is limited to about 1.0 μm. For this reason, when the slit width of the slit pattern 103b of the light shielding film cannot be further reduced in the first region 113, a pattern having a thickness intermediate between the thickness of the pattern 130a and the thickness of the pattern 130b is obtained. The transmittance cannot be adjusted. Similarly, when the slit width of the slit pattern 103b of the light shielding film cannot be further reduced in the second region 114, and the pitch of the slit pattern 103b of the light shielding film cannot be reduced further, the pattern The transmittance cannot be adjusted so that a pattern thinner than 130c can be obtained.

  On the other hand, since the gradation mask of the present invention has the second semi-transparent region provided with only the semi-transparent film slit pattern, for example, the third region 115 in which one semi-transparent film slit pattern 104b is formed. By providing the (second translucent region), it is possible to adjust the transmittance so that a pattern 130d having a thickness intermediate between the thickness of the pattern 130a and the thickness of the pattern 130b can be obtained. The gradation mask of the present invention may have a third semitransparent region provided with a slit pattern of a light shielding film and a main pattern of a semitransparent film. By providing the fourth region 116 (third translucent region) in which the slit pattern 103b of the film is formed, the transmittance can be adjusted so that a pattern 130e thinner than the thickness of the pattern 130c can be obtained.

As described above, in the present invention, it is possible to finely adjust the transmittance so that a pattern having a thickness that cannot be formed conventionally can be formed. That is, the gradation mask of the present invention has an advantage that the range of transmittance design is wide.
Hereinafter, each configuration of the gradation mask of the present invention will be described.

1. Translucent film The translucent film in the present invention is formed in a pattern on a transparent substrate and has a transmittance adjusting function. The translucent film pattern is composed of a main pattern and a slit pattern having a slit width equal to or less than the resolution limit in exposure using a gradation mask.

The main pattern of the semitransparent film is arranged in the first semitransparent area, but may be arranged in the light shielding area. Further, when the gradation mask of the present invention has a third semi-transparent region to be described later, the main pattern of the semi-transparent film is also disposed in the third semi-transparent region.
The size and shape of the main pattern of the semi-transparent film are appropriately adjusted according to the size and shape of the first semi-transparent region, the light shielding region, and the third semi-transparent region.

The slit pattern of the semitransparent film is arranged in the second semitransparent region.
The slit width of the slit pattern of the semi-transparent film is not particularly limited as long as it is a size that is equal to or smaller than the resolution limit in exposure using a gradation mask, and depends on the desired transmittance of the second semi-transparent region. Are adjusted accordingly. Moreover, the pitch of the slit pattern of the semitransparent film is not particularly limited, and is appropriately adjusted according to the transmittance of the target second semitransparent region.

  Although it does not specifically limit as a transmittance | permeability characteristic of a semi-transparent film | membrane, Two preferable aspects can be mentioned.

  In the first aspect of the transmissivity characteristic of the translucent film, the transmissivity at a wavelength of 365 nm is larger than the transmissivity at a wavelength of 300 nm, and the difference between the transmissivity at a wavelength of 365 nm and the transmissivity at a wavelength of 300 nm is 6.5. It is the transmittance | permeability characteristic that it exists in the range of% -13.0%. For example, when a high-pressure mercury lamp is used in the exposure apparatus, the end of the emission line spectrum is approximately 300 nm and the wavelength of the I-line is 365 nm. Light not only in the wavelength range (about 350 nm to 450 nm) but also in the short wavelength range (about 300 nm to 350 nm) is transmitted through the translucent film with a predetermined transmittance. Light in a short wavelength region has advantages of high energy and a high reaction rate (curing rate or decomposition rate). For this reason, it is possible to shorten the exposure time by effectively using light in a short wavelength region. Further, when a negative photosensitive resin is used, exposure in a short wavelength region tends to cure the photosensitive resin layer from the surface, so that diffusion of impurities from the inside of the photosensitive resin layer can be suppressed. Therefore, when the translucent film has such transmittance characteristics, it is advantageous for pattern formation.

  The preferable range of the difference in transmittance between 365 nm and 300 nm varies depending on the pattern formed using the gradation mask of the present invention. When, for example, patterns having different heights are formed by batch exposure using the gradation mask of the present invention and the difference in height between the patterns is 3 μm or more, the transmission at 365 nm and 300 nm described above is performed. The difference in rate is preferably in the range of 6.5% to 10.0%, more preferably in the range of 6.5% to 9.0%. Moreover, when the difference in height between the patterns is 3 μm or less, the difference in transmittance at 365 nm and 300 nm is preferably in the range of 10.0% to 13.0%, more preferably. Is in the range of 10.5% to 12.0%.

  Further, the transmittance at a wavelength of 405 nm is larger than the transmittance at a wavelength of 300 nm, and the difference between the transmittance at a wavelength of 405 nm and the transmittance at a wavelength of 300 nm is in the range of 10.5% to 21.0%. Is preferred. For example, when a high-pressure mercury lamp is used in the exposure apparatus, the wavelength of H-ray is 405 nm. This is because light in a short wavelength region can be used effectively as in the above case.

  The preferable range of the difference in transmittance at 405 nm and 300 nm varies depending on the pattern formed using the gradation mask of the present invention. For example, when patterns having different heights are formed by batch exposure using the gradation mask of the present invention, and the difference in height between the patterns is 3 μm or more, the transmission at 405 nm and 300 nm described above is performed. The difference in rate is preferably in the range of 10.5% to 15.5%, more preferably in the range of 12.0% to 14.0%. When the difference in height between the patterns is 3 μm or less, the difference in transmittance at 405 nm and 300 nm is preferably in the range of 15.5% to 21.0%, more preferably Is in the range of 16.0% to 18.0%.

  Furthermore, the transmittance at a wavelength of 436 nm is larger than the transmittance at a wavelength of 300 nm, and the difference between the transmittance at a wavelength of 436 nm and the transmittance at a wavelength of 300 nm is in the range of 13.5% to 27.0%. Is preferred. For example, when a high-pressure mercury lamp is used for the exposure apparatus, the wavelength of G-line is 436 nm. In this case as well, light in the short wavelength region can be used effectively.

  The preferable range of the difference in transmittance at 436 nm and 300 nm differs depending on the pattern formed using the gradation mask of the present invention. When, for example, patterns having different heights are formed by batch exposure using the gradation mask of the present invention and the difference in height between the patterns is 3 μm or more, the transmission at 436 nm and 300 nm is performed. The difference in rate is preferably in the range of 13.5% to 20.0%, more preferably in the range of 13.5% to 17.0%. Moreover, when the difference in height between the patterns is 3 μm or less, the difference in transmittance at 436 nm and 300 nm is preferably in the range of 20.0% to 27.0%, more preferably Is in the range of 20.0% to 23.0%.

  Further, the transmittance at a wavelength of 300 nm varies depending on the thickness of the translucent film and the application of the gradation mask of the present invention, but is preferably in the range of 3.5% to 70%. It is preferably in the range of 0% to 70%. For example, when a high-pressure mercury lamp is used in the exposure apparatus, the end of the emission spectrum is approximately 300 nm. Therefore, if the transmittance at a wavelength of 300 nm is in the above range, light in a short wavelength region should be used more reliably. Because you can.

  The preferable range of the transmittance at 300 nm is different depending on the pattern formed using the gradation mask of the present invention. For example, in the case where patterns having different heights are formed by batch exposure using the gradation mask of the present invention, when the difference in height between the patterns is 3 μm or more, the transmittance at 300 nm is 3. It is preferably in the range of 5% to 15.0%, more preferably in the range of 7.0% to 10.0%. When the difference in height between the patterns is 3 μm or less, the transmittance at 300 nm is preferably in the range of 15.0% to 70.0%, more preferably 20.0. % To 50.0%.

  Furthermore, the average transmittance at a wavelength of 250 nm to 600 nm is preferably in the range of 10% to 60%, more preferably in the range of 20% to 50%. If the average transmittance is less than the above range, in the pattern formation using the gradation mask of the present invention, the difference in transmittance between the first translucent region and the light shielding region may be difficult to occur, and the average transmittance may be This is because exceeding the range may make it difficult to produce a difference in transmittance between the second translucent region and the transmissive region.

  In addition, the transmittance | permeability in each wavelength mentioned above can measure the transmittance | permeability of a semi-transparent film | membrane using the transmittance | permeability of the transparent substrate used for a gradation mask as a reference (100%). As the apparatus, an ultraviolet / visible spectrophotometer (for example, Hitachi U-4000) or an apparatus having a photodiode array as a detector (for example, Otsuka Electronics MCPD) can be used.

  Moreover, the 2nd aspect of the transmittance | permeability characteristic of a semi-transparent film | membrane is a transmittance | permeability characteristic that the transmittance | permeability distribution in the range of wavelength 300nm-450nm is 7% or less. For example, when a high-pressure mercury lamp is used for the exposure apparatus, the end of the emission spectrum is approximately 300 nm, the wavelength of I-line is 365 nm, the wavelength of H-line is 405 nm, and the wavelength of G-line is 436 nm. If the transmittance distribution within the range of 300 nm to 450 nm including the above is within the above range, both the long wavelength range (about 350 nm to 450 nm) and the short wavelength range (about 300 nm to 350 nm) of the exposure light are translucent with almost constant transmittance. Since the light passes through the film, the exposure light can be used effectively. Further, by adjusting the transmittance at a certain wavelength, the transmittance can be adjusted within a predetermined range over the entire exposure wavelength range, and the film thickness of the photosensitive resin layer after development can be controlled. It is easy to control the film thickness of the photosensitive resin layer. Therefore, even when the translucent film has such transmittance characteristics, it is advantageous for pattern formation.

  The transmittance distribution in the wavelength range of 300 nm to 450 nm is preferably 5% or less.

  Moreover, it is preferable that the transmittance | permeability distribution in wavelength 250nm -600nm is 20% or less, More preferably, it is 10% or less. In general, in the manufacturing process of a display device such as a liquid crystal display device, the exposure wavelength range is often set within the range of 250 nm to 600 nm as the exposure condition for pattern formation, so the transmittance distribution at 250 nm to 600 nm is within the above range. This is because a wide wavelength range can be used effectively.

Further, the transmittance at a wavelength of 300 nm varies depending on the film thickness of the translucent film and the application of the gradation mask of the present invention, but is preferably in the range of 10% to 70%. As described above, for example, when a high-pressure mercury lamp is used in the exposure apparatus, since the end of the emission spectrum is approximately 300 nm, if the transmittance at a wavelength of 300 nm is in the above range, light in a short wavelength region is more This is because it can be used reliably.
In particular, for example, when spacers having different heights are formed by batch exposure using the gradation mask of the present invention, and the difference in height of each pattern is 3 μm or more, the transmittance at 300 nm is high. It is preferably in the range of 10% to 30%, more preferably in the range of 10% to 20%. Further, when the difference in height of each pattern is 3 μm or less, the transmittance at 300 nm is preferably in the range of 30% to 70%, more preferably in the range of 30% to 50%. is there.

  Moreover, it is preferable that the average transmittance | permeability in wavelength 250nm -600nm of a translucent film | membrane is in the range of 10%-60%. If the average transmittance is less than the above range, in the pattern formation using the gradation mask of the present invention, the difference in transmittance between the first translucent region and the light shielding region may be difficult to occur, and the average transmittance may be This is because exceeding the range may make it difficult to produce a difference in transmittance between the second translucent region and the transmissive region.

The transmittance distribution was obtained by dividing the difference between the maximum transmittance (T _max ) and the minimum transmittance (T _min ) at 300 nm to 450 nm by the value obtained by doubling the average transmittance (T _av ) at 300 nm to 450 nm. It is a value obtained by multiplying the value by 100. (Transmissivity distribution = (T _max −T _min ) / (2T _av ) × 100)
Further, the transmittance measurement method is the same as the method described in the first aspect of the transmittance characteristic.

  Examples of the material for forming the translucent film having the transmittance characteristics of the first aspect include oxides such as chromium, molybdenum silicide, tantalum, aluminum, and silicon, nitrides, and carbides. From the advantage that the translucent film and the light-shielding film can be patterned by the same etching equipment and process, the material for forming the translucent film is preferably a material similar to the light-shielding film. As will be described later, it is preferable that the light-shielding film forming material is a chromium-based material. Therefore, the semi-transparent film forming material is also a chromium-based material such as chromium, chromium oxide, chromium nitride, chromium oxynitride, or chromium oxynitride carbide. It is preferable that These chromium-based materials have an advantage that they can withstand long-time use because they are excellent in mechanical strength and are stable without light-retarding.

In the case of the first aspect, it is particularly preferable that the material for forming the translucent film is chromium oxynitride carbide (Cr _x O _y N _z C _w ). Here, w is preferably <0.01, and the element ratio of Cr, O, and N is preferably Cr: 30 to 60%, O: 30 to 70%, and N: 0 to 40%. It is preferable that it is -45%, O: 40-60%, N: 2-20%.

Further, as a material for forming the translucent film having the transmittance characteristic of the second aspect, for example, a film of a metal such as chromium, molybdenum silicide, tantalum, aluminum, silicon, nickel, or chromium, molybdenum silicide, tantalum, aluminum And nitrides and carbides of metals such as silicon and nickel.
For example, since metals, metal nitrides, and metal carbides have a relatively large absorption coefficient, the transmittance distribution is within a predetermined range at wavelengths of 300 nm to 450 nm, and often has the above-described transmittance characteristics. In contrast, a metal oxide has a relatively small absorption coefficient, and the absorption coefficient approaches almost zero as the wavelength becomes longer (ultraviolet / visible region). Therefore, the transmittance characteristic increases as the wavelength increases. Often shown. Therefore, as described above, metal, metal nitride, and metal carbide are used as the material for forming the translucent film. Note that the translucent film using a metal, metal nitride, or metal carbide may contain a trace amount of oxygen as long as the above-described transmittance characteristics are satisfied.

  Also in the case of the second embodiment, the semi-transparent film and the light-shielding film are preferably made of the same material as the light-shielding film because of the advantage that the semi-transparent film and the light-shielding film can be patterned by the same etching equipment and process. As will be described later, since the light-shielding film forming material is preferably a chromium-based material, the translucent film forming material is also preferably a chromium-based material such as chromium or chromium nitride.

In the second aspect, the material for forming the translucent film is more preferably a metal. This is because a metal has a higher absorption coefficient than that of a metal nitride, a metal carbide, or the like, and therefore, by using a metal, a translucent film that satisfies the above-described suitable transmittance characteristics can be obtained.
In particular, the material for forming the translucent film is preferably chromium. As described above, this is because the material for forming the translucent film is preferably the same material as the light-shielding film, and the material for forming the light-shielding film is preferably a chromium-based material in terms of patterning. The translucent film using chromium may contain a small amount of oxygen or nitrogen, but the chromium content in the translucent film is preferably 80% or more, and particularly preferably 95% or more. It is because it can be set as the semi-transparent film | membrane which satisfies the suitable transmittance | permeability characteristic mentioned above.

  In the second embodiment, molybdenum silicide and tantalum are also preferably used as the material for forming the translucent film. The translucent film using tantalum may contain a small amount of oxygen or nitrogen as in the case of chromium.

  The translucent film may be a single layer or may be composed of a plurality of layers.

  The thickness of the translucent film is preferably a film thickness that satisfies the above-described transmittance characteristics. The thickness of the translucent film satisfying the transmittance characteristics of the first aspect is preferably about 5 to 50 nm when chromium is used, for example, and about 5 to 150 nm when chromium oxide is used. Is preferred. The thickness of the translucent film that satisfies the transmittance characteristics of the second aspect is preferably about 5 nm to 20 nm when chromium is used, for example. Since the transmissivity of the translucent film varies depending on its thickness, the desired transmissivity can be obtained by controlling the thickness. Further, when the translucent film contains oxygen, nitrogen, carbon, etc., the transmittance varies depending on the composition, so that the desired transmittance can be realized by simultaneously controlling the thickness and the composition.

  The pattern of the semitransparent film can be formed by forming a semitransparent film and patterning it. As a method for forming the translucent film, for example, a physical vapor deposition method (PVD) such as a sputtering method, an ion plating method, or a vacuum vapor deposition method is used. For example, when forming a chromium oxynitride chromium carbide film using a sputtering method, a reactive gas sputtering method using a Cr target by introducing a carrier gas such as Ar gas, oxygen (carbonic acid) gas, or nitrogen gas into the reactor. Thus, a chromium oxynitride carbide carbide film can be formed. At this time, the composition of the chromium oxynitride carbide film can be controlled by controlling the flow rates of Ar gas, oxygen (carbonic acid) gas, and nitrogen gas. The patterning method of the translucent film will be described in the section of the method for manufacturing a gradation mask described later, and will not be described here.

2. Light-shielding film The light-shielding film in the present invention is formed in a pattern on a transparent substrate and substantially does not transmit exposure light.

  The pattern of the light shielding film is arranged in the light shielding area, and the light shielding area is defined by the pattern of the light shielding film. The size and shape of the pattern of the light shielding film are appropriately adjusted according to the size and shape of the light shielding region.

  The light shielding film pattern may be composed of a main pattern and a slit pattern having a slit width equal to or less than a resolution limit in exposure using a gradation mask. When the gradation mask of the present invention has a third semi-transparent region to be described later, the main pattern of the light shielding film is disposed in the light shielding region, and the slit pattern of the light shielding film is disposed in the third semi-transparent region.

The size and shape of the main pattern of the light shielding film are appropriately adjusted according to the size and shape of the light shielding region.
Further, the slit width of the slit pattern of the light shielding film is not particularly limited as long as it is a size less than the resolution limit in the exposure using the gradation mask, and depends on the transmittance of the target third translucent region. Are adjusted accordingly. Further, the pitch of the slit pattern of the light shielding film is not particularly limited, and is appropriately adjusted according to the desired transmittance of the third translucent region.

  The average transmittance at the exposure wavelength of the light shielding film is preferably 0.1% or less. In addition, about the measuring method of average transmittance | permeability, it is the same as that of the method described in the term of the said semi-transparent film | membrane.

  As a material for forming such a light shielding film, a material for forming a light shielding film generally used for a photomask can be used. Examples of the material for forming the light shielding film include chromium, chromium oxide, chromium nitride, chromium oxynitride, molybdenum silicide, tantalum, aluminum, silicon, silicon oxide, and silicon oxynitride. Among these, chromium-based materials such as chromium, chromium oxide, chromium nitride, and chromium oxynitride are preferably used. This is because such a chromium-based material has the most actual use record and is preferable in terms of cost and quality. The light shielding film using a chromium-based material may be a single layer or may be a laminate of two or more layers.

  Further, the light shielding film may have a low reflection function. Since the low reflection function can prevent irregular reflection of exposure light, a clearer pattern can be formed. In order to add a low reflection function to the light shielding film, for example, a chromium compound such as chromium oxide for preventing reflection of exposure light may be contained on the surface of the light shielding film. In this case, the light shielding film may be formed by an inclined interface in which the content component gradually changes toward the surface.

  The thickness of the light shielding film is not particularly limited. For example, when chromium is used, the thickness can be about 50 nm to 150 nm.

  The pattern of the light shielding film can be formed by forming a light shielding film and patterning it. As a method for forming the light shielding film, for example, a physical vapor deposition method (PVD) such as a sputtering method, an ion plating method, or a vacuum vapor deposition method is used. The light-shielding film patterning method will be described in the section of a method for manufacturing a gradation mask, which will be described later, and will not be described here.

3. 1st translucent area | region and 2nd translucent area | region The 1st translucent area | region in this invention is an area | region in which only the main pattern of the translucent film | membrane was provided on the transparent substrate. That is, no light shielding film is formed in the first semitransparent region, and no slit pattern of the semitransparent film is formed.

  The second translucent region in the present invention is a region in which only the slit pattern of the translucent film is provided on the transparent substrate. That is, the light-shielding film is not formed in the second semi-transparent region, and the main pattern of the semi-transparent film is not formed.

  In the second translucent region, there may be a plurality of regions in which at least one of the slit width and pitch of the slit pattern of the translucent film is different. For example, as shown in FIG. 5, a second translucent region 14a in which one semi-transparent film slit pattern 4b is formed, and a second translucent region 14b in which two semi-transparent film slit patterns 4b are formed, The second semitransparent region 14c in which five slit patterns 4b of the semitransparent film are formed may be mixed. Thereby, further multi-gradation can be achieved.

  The transmittance of the first translucent region is not particularly limited as long as it is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, and lower than the transmittance of the second translucent region. It is appropriately selected depending on a pattern formed using a gradation mask.

  The transmittance of the second translucent region is not particularly limited as long as it is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, and higher than the transmittance of the first translucent region. It is appropriately selected depending on the pattern formed using the gradation mask of the invention.

  The dimensions and shapes of the first translucent region and the second translucent region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask of the present invention. For example, the shapes of the first translucent region and the second translucent region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

  As illustrated in FIG. 4, the gradation mask of the present invention has a third semitransparent region 15 provided with a slit pattern 3 b of a light shielding film and a main pattern 4 a of a semitransparent film on a transparent substrate 2. Also good. Thereby, further multi-gradation can be achieved. In the third semi-transparent region, the main pattern of the light shielding film and the slit pattern of the semi-transparent film are not formed.

  If the transmittance of the third translucent region is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, lower than the transmittance of the first translucent region, and lower than the transmittance of the second translucent region, The pattern is not limited, and is appropriately selected depending on the pattern formed using the gradation mask of the present invention.

  The size and shape of the third translucent region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask of the present invention.

  Moreover, the gradation mask of this invention may have the 4th translucent area | region 16 in which the slit pattern 3b of the light shielding film was provided on the transparent substrate 2 so that it may illustrate in FIG. Thereby, further multi-gradation can be achieved. As illustrated in FIG. 4, a semi-transparent film slit pattern 4b may be formed in the fourth semi-transparent region 16 at the same position as the light-shielding film slit pattern 3b. Further, the main pattern of the light shielding film and the main pattern of the semitransparent film are not formed in the fourth semitransparent region.

  If the transmittance of the fourth translucent region is lower than the transmittance of the transmissive region, higher than the transmittance of the light shielding region, lower than the transmittance of the first translucent region, and lower than the transmittance of the second translucent region, The pattern is not limited, and is appropriately selected depending on the pattern formed using the gradation mask of the present invention.

  The size and shape of the fourth translucent region are not particularly limited, and are appropriately adjusted according to the use of the gradation mask of the present invention.

4). Transmission region and light shielding region The transmission region in the present invention is a region having only a transparent substrate. That is, neither the light-shielding film nor the translucent film is formed in the transmission region.

  The light shielding region in the present invention is a region in which a pattern of a light shielding film is provided on a transparent substrate. The light shielding region only needs to have at least a light shielding film pattern formed on the transparent substrate. For example, only the light shielding film pattern may be formed, and the light shielding film pattern and the semitransparent film pattern are formed. May be. When the gradation mask of the present invention has the third translucent region, the light shielding region is a region where the main pattern of the light shielding film is provided on the transparent substrate.

  The dimensions and shapes of the transmissive region and the light shielding region are not particularly limited, and are appropriately adjusted according to the application of the gradation mask of the present invention. For example, the shapes of the transmission region and the light shielding region can be various shapes such as a circle, a rectangle, a frame, a polygon, and a line.

5. Transparent substrate The substrate generally used for a photomask can be used for the transparent substrate used for this invention. As the transparent substrate, for example, optically polished low expansion glass such as borosilicate glass and aluminoborosilicate glass, quartz glass, synthetic quartz glass, Pyrex (registered trademark) glass, soda lime glass, white sapphire and the like are not flexible. A transparent rigid material, or a transparent flexible material having flexibility such as a transparent resin film or an optical resin film can be used. Among them, quartz glass is a material having a small coefficient of thermal expansion, and is excellent in dimensional stability and characteristics in high-temperature heat treatment.

6). Gradation mask The gradation mask of the present invention is obtained by forming a light-shielding film and a semi-transparent film in a pattern on a transparent substrate, and the above-described transmission region, light-shielding region, first semi-transparent region, and second semi-transparent. What is necessary is just to have an area | region etc., and it does not specifically limit as a lamination order of a transparent substrate, a light shielding film, and a semi-transparent film. For example, the transparent substrate 2, the light shielding film 3, and the semitransparent film 4 may be laminated in this order as shown in FIG. 1, and the transparent substrate 2, the semitransparent film 4 and the light shielding film 3 as shown in FIG. The semi-transparent film 4, the transparent substrate 2, and the light-shielding film 3 may be laminated in this order as shown in FIG.

In the present invention, a low reflection layer may be formed on the light shielding film. This is because by providing the low reflection layer, halation can be prevented when the gradation mask is used.
Examples of the low reflection layer include films of chromium oxide, chromium nitride, chromium oxynitride, and the like. When a chromium-based material is used for the light shielding film, these films can be etched simultaneously with the etching of the light shielding film.

  In the gradation mask of the present invention, the transmittance changes stepwise in four steps or more. The gradation mask is not limited to the gradation mask of 4 gradations, but can be changed to 4 gradations or more by periodically changing the slit width and pitch of the slit pattern of the semitransparent film in the second semitransparent region. It is possible to use a multi-tone gradation mask. For example, as shown in FIG. 5, the transmittance of the three types of second semi-transparent regions 14a, 14b, and 14c can be made different by periodically changing the pitch of the slit patterns 4b of the semi-transparent film. .

  In the present invention, a multi-tone mask having four or more tones can be obtained by combining the main pattern and slit pattern of the translucent film and the slit pattern of the light shielding film. For example, as shown in FIG. 4, the gradation mask 1 is formed on the transparent substrate 2 on the third semitransparent region 15 in which the light shielding film slit pattern 3 b and the semitransparent film main pattern 4 a are provided, or on the transparent substrate 2. By having the fourth semi-transparent region 16 provided with the slit pattern 3b of the light shielding film, multi-gradation can be achieved.

  The gradation mask of the present invention can be used for manufacturing various products manufactured through an exposure process, such as a lithography method. Among these, the effects of the present invention can be utilized to the maximum when used for manufacturing a display device such as a liquid crystal display device, an organic EL display device, or a plasma display panel, particularly for manufacturing a large display device.

  As an application for simultaneously forming three or more types of patterns by batch exposure using the gradation mask of the present invention, specifically, a liquid crystal display device or a color filter for a liquid crystal display device is used simultaneously with spacers having different thicknesses and alignment control projections. Formation, simultaneous formation of spacers and overcoat layers with different thicknesses in liquid crystal display devices or color filters for liquid crystal display devices, spacers in transflective liquid crystal display devices or color filters for transflective liquid crystal display devices, and orientation control for transmission parts Simultaneous formation of protrusions and alignment control protrusions for reflecting portion, liquid crystal display device or color filter for liquid crystal display device, spacer, alignment control protrusion and light shielding portion simultaneously formed, transflective liquid crystal display device or transflective liquid crystal display device Spacers, overcoat layers and gaps in color filters Simultaneous formation of advice service, and the like liquid crystal display device or simultaneous formation of a liquid crystal display device spacer in a color filter, a white overcoat layer and the red, green and blue overcoat layer.

  The size of the gradation mask of the present invention is appropriately adjusted according to the application. For example, when used for manufacturing a display device such as a liquid crystal display device or an organic EL display device, 300 mm × 400 mm to 1, It can be about 600 mm × 1,800 mm.

7). Next, a method for manufacturing a gradation mask according to the present invention will be described.
As a method for manufacturing a gradation mask according to the present invention, a translucent film and a light-shielding film are formed in a pattern on a transparent substrate so that a transmissive region, a light-shielding region, a first semi-transparent region, and a second semi-transparent region are formed at desired positions. The method is not particularly limited as long as it can arrange a transparent region or the like.

  As an example of the manufacturing method of the gradation mask of the present invention, using a mask blank in which a light shielding film is formed on a transparent substrate, the light shielding film is patterned to form an intermediate pattern of the light shielding film, A semi-transparent film forming step for forming a semi-transparent film on the entire surface of the transparent substrate on which the intermediate pattern of the light-shielding film is formed, and patterning the intermediate pattern and the semi-transparent film of the light-shielding film to form the pattern of the light-shielding film and the semi-transparent And a second patterning step for forming a main pattern of the film and a slit pattern.

An example of a method for manufacturing the above-described gradation mask is shown in FIG.
First, a mask blank 50 having a light shielding film 53 formed on the transparent substrate 2 is prepared (FIG. 7A). Next, a positive resist material is applied on the light-shielding film 53 and baked for a predetermined time after the application to form the first resist film 51 (FIG. 7B). Next, pattern exposure and development are performed to form a first resist pattern 51 '(FIG. 7C). At this time, the first resist film 51 is removed in the first semi-transparent region 13 and the second semi-transparent region 14 in the obtained gradation mask, and the first resist film 51 remains in the transmissive region 11 and the light-shielding region 12. Pattern exposure. Then, the light shielding film 53 exposed from the first resist pattern 51 ′ is etched, and the remaining first resist pattern 51 ′ is removed to form a light shielding film intermediate pattern 53 ′ (FIG. 7D). ). 7A to 7D show the first patterning step.

  Next, a semitransparent film 54 is formed on the entire surface of the transparent substrate 2 on which the light shielding film intermediate pattern 53 ′ is formed (FIG. 7E, a semitransparent film forming process).

  Next, a positive resist material is applied on the translucent film 54, and is baked for a predetermined time after the application, thereby forming a second resist film 52 (FIG. 7F). Next, pattern exposure and development are performed to form a second resist pattern 52 ′ (FIG. 7G). At this time, the second resist film 52 is removed in the transmission region 11 in the obtained gradation mask, the second resist film 52 remains in the light shielding region 12 and the first semitransparent region 13, and the second resist film 52 in the second semitransparent region 14. 2. Pattern exposure is performed so that the resist film 52 is patterned into a slit shape. Then, the semitransparent film 54 exposed from the second resist pattern 52 'is etched, and then the portion where the lower light shielding film intermediate pattern 53' is exposed is further etched to leave the remaining second resist The pattern 52 'is removed, and the pattern of the light shielding film 3, the main pattern 4a of the semitransparent film, and the slit pattern 4b are formed (FIG. 7 (h)). FIGS. 7F to 7H show the second patterning process.

  In the above method, it is not necessary to selectively etch only the light shielding film or only the translucent film. For this reason, it has the advantage that the material used for a light shielding film and a semi-transparent film is not limited. For example, a similar material, specifically, a chromium-based material can be used for the light-shielding film and the translucent film. In addition, since etching selectivity is not required, it is not necessary to use a plurality of etching techniques (a plurality of apparatuses, etchants, etc.), and the manufacturing cost can be reduced. Further, when a chromium-based material is used for the light shielding film and the semitransparent film, the gradation mask can be manufactured by the same process as the conventional binary mask, and there is an advantage that a complicated process is not required.

  Further, as another example of the method for producing a gradation mask of the present invention, a semi-transparent film and a light shielding film are patterned using a mask blank in which a semitransparent film and a light shielding film are laminated in this order on a transparent substrate, A first patterning step of forming a semi-transparent film main pattern and slit pattern, and an intermediate pattern of the light shielding film; and a second patterning step of patterning only the intermediate pattern of the light shielding film to form a pattern of the light shielding film. A manufacturing method is mentioned.

An example of a method for manufacturing the above-described gradation mask is shown in FIG.
First, a mask blank 50 in which a translucent film 54 and a light shielding film 53 are laminated in this order on a transparent substrate 2 is prepared (FIG. 8A). Next, a positive resist material is applied on the light-shielding film 53 and baked for a predetermined time after the application to form the first resist film 51 (FIG. 8B). Next, pattern exposure and development are performed to form a first resist pattern 51 ′ (FIG. 8C). At this time, the first resist film 51 is removed in the transmission region 11 in the gradation mask to be obtained, the first resist film 51 remains in the light shielding region 12 and the first semitransparent region 13, and the first resist film 51 remains in the second semitransparent region 14. The pattern exposure is performed so that one resist film 51 is patterned into a slit shape. Then, the light shielding film 53 exposed from the first resist pattern 51 ′ is etched, and then the portion where the lower semitransparent film 54 is exposed is further etched to leave the remaining first resist pattern 51 ′. Are removed to form a main pattern 4a and a slit pattern 4b of a translucent film, and a light shielding film intermediate pattern 53 '(FIG. 8D). 8A to 8D show the first patterning process.

  Next, a positive resist material is applied on the transparent substrate 2 on which the main pattern 4a and the slit pattern 4b of the translucent film and the light shielding film intermediate pattern 53 'are formed, and baked for a predetermined time after the application, whereby the second resist film 52 is formed (FIG. 8E). Subsequently, pattern exposure and development are performed to form a second resist pattern 52 '(FIG. 8F). At this time, the second resist film 52 is removed in the first semi-transparent region 13 in the obtained gradation mask, the second resist film 52 remains in the transmissive region 11 and the light-shielding region 12, and semi-transparent in the second semi-transparent region 14. Pattern exposure is performed so that the second resist film 52 is patterned into a slit shape corresponding to the slit pattern 4b of the transparent film. Then, the light shielding film intermediate pattern 53 ′ exposed from the second resist pattern 52 ′ is etched, and the remaining second resist pattern 52 ′ is removed to form the pattern of the light shielding film 3 (FIG. 8 ( g)). 8E to 8G show the second patterning process.

  In the above method, it is not necessary to perform the semitransparent film forming step in the middle of the manufacturing process of the gradation mask. For this reason, the risk (defect, dirt, etc.) at the time of film-forming of a semi-transparent film | membrane can be reduced. Further, TAT (Turn Around Time) can be shortened.

  For a method of manufacturing a gradation mask, reference can be made to JP-A-2005-84366, JP-A-2005-181827, JP-A-2005-208128, and JP-A-2006-18001.

B. Next, a gradation mask for manufacturing a display device according to the present invention will be described.
The gradation mask for manufacturing a display device according to the present invention (hereinafter sometimes simply referred to as “gradation mask”) is characterized in that the above-described gradation mask is used for manufacturing a display device.

  A method for forming various members in a color filter applied to a display device using the gradation mask of the present invention will be described with reference to the drawings.

  FIG. 9 shows an example in which spacers and alignment control protrusions having different thicknesses are formed in a color filter using the gradation mask of the present invention. First, as shown in FIG. 9A, a light shielding portion 23 and a colored layer 24 are formed on a substrate 22, a transparent electrode layer 25 is formed on the colored layer 24, and a negative type is formed on the transparent electrode layer 25. A photosensitive resin layer 26 made of a photosensitive resin is formed. Next, as shown in FIG. 9B, the photosensitive resin layer 26 is exposed through the gradation mask 1. In the gradation mask 1, the transmittance is different between the transmissive region 11, the light shielding region 12, the first semi-transparent region 13, and the second semi-transparent region 14. By developing after exposure, three types of patterns (high spacer 31a, low spacer 31b, and alignment control protrusion 31c) having different shapes and thicknesses are formed.

  FIG. 10 shows an example in which spacers and overcoat layers having different thicknesses in a color filter are formed using the gradation mask of the present invention. First, as shown in FIG. 10A, a light shielding portion 23 and a colored layer 24 are formed on a substrate 22, and a photosensitive resin layer 26 made of a negative photosensitive resin is formed on the colored layer 24. Next, as shown in FIG. 10B, the photosensitive resin layer 26 is exposed through the gradation mask 1. In the gradation mask 1, the transmittance is different between the transmissive region 11, the light shielding region 12, the first semi-transparent region 13, and the second semi-transparent region 14. By developing after exposure, three types of patterns (high spacer 32a, low spacer 32b, and overcoat layer 32c) with different shapes and thicknesses are formed.

  FIG. 11 shows an example of forming spacers and alignment control protrusions in a color filter using the gradation mask of the present invention. In a color filter used in a transflective liquid crystal display device, spacers are formed in a non-display area. In this example, alignment control protrusions having a uniform thickness are formed on the transmission part and the reflection part. First, as shown in FIG. 11A, a light shielding portion 23 and a colored layer 24 are formed on a substrate 22, a gap adjusting layer 27 is formed on the colored layer 24, and the gap adjusting layer 27 is covered. A transparent electrode layer 25 is formed, and a photosensitive resin layer 26 made of a negative photosensitive resin is further formed on the transparent electrode layer 25. Of the display region, the region where the gap adjustment layer 27 is provided is the reflection portion r, and the region where the gap adjustment layer 27 is not provided is the transmission portion t. Next, as shown in FIG. 11B, the photosensitive resin layer 26 is exposed through the gradation mask 1. In the gradation mask 1, the transmittance is different between the transmissive region 11, the light shielding region 12, the first semi-transparent region 13, and the second semi-transparent region 14. By developing after exposure, three types of patterns (spacer 33a, transmission portion orientation control projection 33b, and reflection portion orientation control projection 33c) are formed. Is done.

  FIG. 12 shows an example in which the spacer, the alignment control protrusion, and the light shielding portion in the color filter are formed using the gradation mask of the present invention. First, as shown in FIG. 12 (a), a colored layer 24 is formed on a substrate 22, a transparent electrode layer 25 is formed on the colored layer 24, and a negative photosensitive resin is formed on the transparent electrode layer 25. A photosensitive resin layer 26 is formed. Next, as shown in FIG. 12B, the photosensitive resin layer 26 is exposed through the gradation mask 1. In the gradation mask 1, the transmittance is different between the transmissive region 11, the light shielding region 12, the first semi-transparent region 13, and the second semi-transparent region 14. By developing after exposure, three types of patterns (spacer 34a, alignment control protrusion 34b, and light shielding portion 34c) having different shapes and thicknesses are formed.

  FIG. 13 is an example of forming a spacer, a gap adjusting layer, and an overcoat layer in a color filter using the gradation mask of the present invention. In the color filter used in a transflective liquid crystal display device, the non-display area is formed. This is an example in which a spacer is formed, a gap adjusting layer is formed in the reflective portion, and an overcoat layer is formed so as to cover the colored layer. First, as shown in FIG. 13A, a light shielding portion 23 and a colored layer 24 are formed on a substrate 22, and a photosensitive resin layer 26 made of a negative photosensitive resin is formed on the colored layer 24. Next, as shown in FIG. 13B, the photosensitive resin layer 26 is exposed through the gradation mask 1. In the gradation mask 1, the transmittance is different between the transmissive region 11, the light shielding region 12, the first semi-transparent region 13, and the second semi-transparent region 14. By developing after exposure, three types of patterns (spacer 35a, gap adjusting layer 35b, and overcoat layer 35c) having different shapes and thicknesses are formed. Of the display region, the region where the gap adjustment layer 35b is provided is the reflection portion r, and the region where the gap adjustment layer 35b is not provided is the transmission portion t.

FIG. 14 shows an example of forming a spacer and an overcoat layer in a color filter by using the gradation mask of the present invention, which is used in a liquid crystal display device, and one pixel has four colors (red, green, blue, and white). This is an example in which a spacer and an overcoat layer having different thicknesses according to red, green, blue, and white are formed in a color filter composed of sub-pixels.
Here, in a color filter in which one pixel is composed of sub-pixels of four colors (red, green, blue, and white), for example, as shown in FIG. 15, the red R, green G, blue B, and white W sub-pixels are used. Pixels are arranged in a mosaic pattern, and a red pattern 24R, a green pattern 24G, and a blue pattern 24B are formed on the substrate 22 according to the red R, green G, and blue B subpixels. A colored layer is not formed in the corresponding part.

  First, as shown in FIG. 14A, a red pattern (not shown) and a green pattern (not shown) are formed on the substrate 22 in accordance with the light shielding portion 23 and the red R, green G, and blue B subpixels. And a colored layer composed of the blue pattern 24B, and a photosensitive resin layer 26 made of a negative photosensitive resin is formed on the colored layer. At this time, a colored layer is not formed in a portion corresponding to the white W sub-pixel. Next, as shown in FIG. 14B, the photosensitive resin layer 26 is exposed through the gradation mask 1. In the gradation mask 1, the transmittance is different between the transmissive region 11, the light shielding region 12, the first semi-transparent region 13, and the second semi-transparent region 14. By developing after exposure, three types of patterns (spacer 36a, red / green / blue (RGB) overcoat layer 36b and white (W) overcoat layer 36c are developed. ) Is formed.

  As described above, the gradation mask of the present invention can change the transmittance stepwise in four steps or more, and includes three or more types having different shapes, thicknesses, heights, etc. constituting the display device. It can be suitably used when forming members in a lump.

  The gradation mask is the same as that described in the above section “A. Tone mask”, and thus the description thereof is omitted here.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

Hereinafter, the present invention will be specifically described with reference to examples.
[Example 1]
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking on a hot plate heated to 120 ° C. for 15 minutes, a desired light-shielding film intermediate pattern was drawn with a photomask laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic Co., Ltd.).
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, using the resist pattern as an etching mask, the chromium film was etched, and the remaining resist pattern was peeled off to obtain a desired light-shielding film intermediate pattern. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding film intermediate pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and washed well, and then the chromium oxynitride carbide film (translucent film) is subjected to the following conditions: A film was formed by a sputtering method.
<Film formation conditions>
・ Gas flow ratio Ar: CO ₂ : N ₂ = 1: 0.5: 0.5
・ Power: 1.5kW
・ Gas pressure: 3mTorr
・ Substrate transport speed: 62 cm / min
At this time, the thickness of the chromium oxynitride carbide film was set to 35 nm. A spectrum of the chromium oxynitride chromium carbide film is shown in FIG.
Next, a commercially available photoresist (ip-3500 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied again on the chromium oxynitride carbide film at a thickness of 600 nm, and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, the image to be the main pattern and the slit pattern of the translucent film is drawn again with a laser drawing device (LRS11000-TFT3 manufactured by Micronic Co., Ltd.) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.). Obtained.
Next, using the resist pattern as an etching mask, the semi-transparent film and the light-shielding film are etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.), and the main pattern and slit pattern of the semi-transparent film are obtained. In addition, a light shielding film pattern was obtained. Etching was performed on the translucent film and the light shielding film.
Finally, the remaining resist was peeled off, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction was performed as necessary to obtain a gradation mask.

(Production of color filter)
As the substrate, a glass substrate (Corning 1737 glass) having a size of 300 mm × 400 mm and a thickness of 0.7 mm was prepared. After this substrate was washed according to a conventional method, a chromium thin film (thickness: 1000 mm) was formed on the entire surface of one side of the substrate by sputtering. A positive-type photosensitive resist (OFPR-800 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied onto the chromium thin film, and exposed and developed through a predetermined mask to form a resist pattern. Next, using this resist pattern as a mask, the chromium thin film was etched to form a black matrix having a line width of 20 μm and a pitch of 100 μm.

  Next, a negative photosensitive resin composition for a red pattern, a negative photosensitive resin composition for a green pattern, and a negative photosensitive resin composition for a blue pattern having the following compositions were prepared.

<Negative photosensitive resin composition for red pattern>
Red pigment (Ciba Specialty Chemicals Chromophthal Red A2B) 4.8 parts by weight Yellow pigment (BASF Pariotor Yellow D1819) 1.2 parts by weight Dispersant (Bicchemy Disperbic 161) 3 1.0 part by weight / monomer (SR399 manufactured by Sartomer) 4.0 parts by weight Polymer I 5.0 parts by weight initiator (Irgacure 907 manufactured by Ciba Specialty Chemicals) 1.4 parts by weight initiator (2, 2′-bis (o-chlorophenyl) -4,5,4 ′, 5′-tetraphenyl-1,2′-biimidazole) 0.6 part by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

<Negative photosensitive resin composition for green pattern>
Green pigment (Avisia Monastral Green 9Y-C) 4.2 parts by weight Yellow pigment (BASF Pariotor Yellow D1819) 1.8 parts by weight Dispersant (Bicchemy Disperbic 161) 3.0 Parts by weight / monomer (SR399, manufactured by Sartomer) 4.0 parts by weight, polymer I 5.0 parts by weight, initiator (Irgacure 907, manufactured by Ciba Specialty Chemicals) 1.4 parts by weight, initiator (2,2 ′ -Bis (o-chlorophenyl) -4,5,4 ', 5'-tetraphenyl-1,2'-biimidazole) 0.6 parts by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

<Negative photosensitive resin composition for blue pattern>
Blue pigment (BASF Heliogen Blue L6700F) 6.0 parts by weight Pigment derivative (Abyssia Solsperse 5000) 0.6 parts by weight Dispersant (Bic Chemie Dispersic 161) 2.4 parts by weight Monomer (SR399, manufactured by Sartomer) 4.0 parts by weight, Polymer I, 5.0 parts by weight, initiator (Irgacure 907, manufactured by Ciba Specialty Chemicals) 1.4 parts by weight, initiator (2,2'-bis (o -Chlorophenyl) -4,5,4 ', 5'-tetraphenyl-1,2'-biimidazole) 0.6 parts by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

  The polymer I is based on 100 mol% of a copolymer of benzyl methacrylate: styrene: acrylic acid: 2-hydroxyethyl methacrylate = 15.6: 37.0: 30.5: 16.9 (molar ratio). 2-methacryloyloxyethyl isocyanate was added at 16.9 mol%, and the weight average molecular weight was 42500.

  Next, a negative photosensitive resin composition for red pattern is applied by spin coating so as to cover the black matrix on the glass substrate, exposed and developed through a photomask for red pattern, and the red pattern is formed. Formed. The red pattern was rectangular (100 μm × 300 μm).

Then, the green pattern and the blue pattern were formed by the same operation using the negative photosensitive resin composition for the green pattern and the negative photosensitive resin composition for the blue pattern. As a result, a colored layer in which a red pattern, a green pattern, and a blue pattern were arranged was formed.
Next, a transparent electrode layer (thickness 1500 mm) made of indium tin oxide (ITO) was formed by sputtering so as to cover the black matrix and the colored layer.

Next, a negative photosensitive resin composition (Optomer NN850 manufactured by JSR) was applied on the transparent electrode layer by spin coating, dried under reduced pressure, and prebaked at 100 ° C. for 3 minutes. Then, it exposed on the following conditions through said gradation mask.
<Exposure conditions>
・ Exposure amount: 100 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, and then heat treatment was performed at 230 ° C. for 30 minutes to simultaneously form three types of convex patterns. The cross-sectional shapes of these three types of patterns were observed with a scanning electron microscope, and the dimensions were measured. The results are shown in Table 1.

  By using the above-described gradation mask in the exposure process, two types of spacers (cell holding column spacers) having different heights and alignment control projections could be formed with desired dimensions.

[Example 2]
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking on a hot plate heated to 120 ° C. for 15 minutes, a desired light-shielding film intermediate pattern was drawn with a photomask laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic Co., Ltd.).
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, using the resist pattern as an etching mask, the chromium film was etched, and the remaining resist pattern was peeled off to obtain a desired light-shielding film intermediate pattern. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding film intermediate pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and washed well, and then the chromium oxynitride carbide film (translucent film) is subjected to the following conditions: A film was formed by a sputtering method.
<Film formation conditions>
・ Gas flow ratio Ar: CO ₂ : N ₂ = 1: 0.5: 0.5
・ Power: 1.5kW
・ Gas pressure: 3mTorr
・ Substrate transport speed: 30 cm / min
At this time, the thickness of the chromium oxynitride carbide film was 75 nm. A spectrum of the chromium oxynitride chromium carbide film is shown in FIG.
Next, a commercially available photoresist (ip-3500 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied again on the chromium oxynitride carbide film at a thickness of 600 nm, and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, the image to be the main pattern and the slit pattern of the translucent film is drawn again with a laser drawing device (LRS11000-TFT3 manufactured by Micronic Co., Ltd.) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.). Obtained.
Next, using the resist pattern as an etching mask, the semi-transparent film and the light-shielding film are etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.), and the main pattern and slit pattern of the semi-transparent film are obtained. In addition, a light shielding film pattern was obtained. Etching was performed on the translucent film and the light shielding film.
Finally, the remaining resist was peeled off, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction was performed as necessary to obtain a gradation mask.

(Production of color filter)
A glass substrate (Corning 1737 glass) having a size of 100 mm × 100 mm and a thickness of 0.7 mm was prepared as a substrate. After this substrate was washed according to a conventional method, a chromium thin film (thickness: 1000 mm) was formed on the entire surface of one side of the substrate by sputtering. A positive-type photosensitive resist (OFPR-800 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied onto the chromium thin film, and exposed and developed through a predetermined mask to form a resist pattern. Next, using this resist pattern as a mask, the chromium thin film was etched to form a black matrix having a line width of 20 μm and a pitch of 100 μm.

  Next, a negative photosensitive resin composition for a red pattern, a negative photosensitive resin composition for a green pattern, and a negative photosensitive resin composition for a blue pattern having the following compositions were prepared.

<Negative photosensitive resin composition for red pattern>
Red pigment (Ciba Specialty Chemicals Chromophthal Red A2B) 4.8 parts by weight Yellow pigment (BASF Pariotor Yellow D1819) 1.2 parts by weight Dispersant (Bicchemy Disperbic 161) 3 1.0 part by weight / monomer (SR399 manufactured by Sartomer) 4.0 parts by weight Polymer I 5.0 parts by weight initiator (Irgacure 907 manufactured by Ciba Specialty Chemicals) 1.4 parts by weight initiator (2, 2′-bis (o-chlorophenyl) -4,5,4 ′, 5′-tetraphenyl-1,2′-biimidazole) 0.6 part by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

<Negative photosensitive resin composition for green pattern>
Green pigment (Avisia Monastral Green 9Y-C) 4.2 parts by weight Yellow pigment (BASF Pariotor Yellow D1819) 1.8 parts by weight Dispersant (Bicchemy Disperbic 161) 3.0 Parts by weight / monomer (SR399, manufactured by Sartomer) 4.0 parts by weight, polymer I 5.0 parts by weight, initiator (Irgacure 907, manufactured by Ciba Specialty Chemicals) 1.4 parts by weight, initiator (2,2 ′ -Bis (o-chlorophenyl) -4,5,4 ', 5'-tetraphenyl-1,2'-biimidazole) 0.6 parts by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

<Negative photosensitive resin composition for blue pattern>
Blue pigment (BASF Heliogen Blue L6700F) 6.0 parts by weight Pigment derivative (Abyssia Solsperse 5000) 0.6 parts by weight Dispersant (Bic Chemie Dispersic 161) 2.4 parts by weight Monomer (SR399, manufactured by Sartomer) 4.0 parts by weight, Polymer I, 5.0 parts by weight, initiator (Irgacure 907, manufactured by Ciba Specialty Chemicals) 1.4 parts by weight, initiator (2,2'-bis (o -Chlorophenyl) -4,5,4 ', 5'-tetraphenyl-1,2'-biimidazole) 0.6 parts by weight / solvent (propylene glycol monomethyl ether acetate) 80.0 parts by weight

  The polymer I is based on 100 mol% of a copolymer of benzyl methacrylate: styrene: acrylic acid: 2-hydroxyethyl methacrylate = 15.6: 37.0: 30.5: 16.9 (molar ratio). 2-methacryloyloxyethyl isocyanate was added at 16.9 mol%, and the weight average molecular weight was 42500.

  Next, a negative photosensitive resin composition for red pattern is applied by spin coating so as to cover the black matrix on the glass substrate, exposed and developed through a photomask for red pattern, and the red pattern is formed. Formed. The red pattern was rectangular (100 μm × 300 μm).

  Then, the green pattern and the blue pattern were formed by the same operation using the negative photosensitive resin composition for the green pattern and the negative photosensitive resin composition for the blue pattern. As a result, a colored layer in which a red pattern, a green pattern, and a blue pattern were arranged was formed.

Next, a negative photosensitive resin composition (Optomer NN850 manufactured by JSR) was applied on the colored layer by a spin coating method, dried under reduced pressure, and prebaked at 100 ° C. for 3 minutes. Then, it exposed on the following conditions through said gradation mask.
<Exposure conditions>
・ Exposure amount: 100 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, followed by heat treatment at 230 ° C. for 30 minutes to form three types of patterns simultaneously. The cross-sectional shape of a part of these three types of patterns was observed with a scanning electron microscope, and the dimensions and the like of the three types of patterns were measured. The results are shown in Table 2.

  By using the above gradation mask for the exposure process, two types of spacers having different heights (cell holding column spacers) and an overcoat layer could be formed simultaneously.

[Comparative Example 1]
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking on a hot plate heated to 120 ° C. for 15 minutes, a desired mask pattern main pattern and slit pattern are drawn by a photomask laser drawing device (Micronic LRS11000-TFT3). did.
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, the chromium film was etched using the resist pattern as an etching mask, and the remaining resist pattern was peeled off to obtain the desired main pattern and slit pattern of the light-shielding film. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding film pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and after cleaning, a chromium oxynitride carbide film (translucent film) is sputtered under the following conditions: The film was formed by the method.
<Film formation conditions>
・ Gas flow ratio Ar: CO ₂ : N ₂ = 1: 0.5: 0.5
・ Power: 1.5kW
・ Gas pressure: 3mTorr
・ Substrate transport speed: 62 cm / min
At this time, the thickness of the chromium oxynitride carbide film was set to 35 nm. A spectrum of the chromium oxynitride chromium carbide film is shown in FIG.
Next, a commercially available photoresist (ip-3500 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied again on the chromium oxynitride carbide film at a thickness of 600 nm, and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, an image serving as a main pattern of the translucent film was again drawn with a laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic Co., Ltd.) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern.
Next, using the resist pattern as an etching mask, the translucent film was etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) to obtain a main pattern of the translucent film. Etching was performed on the translucent film.
Finally, the remaining resist is peeled off, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction is performed as necessary, and the transmissive area, light-shielding area (light-shielding film main pattern), and first translucent area A gradation mask having (translucent film main pattern) and a fourth translucent region (light-shielding film slit pattern) was obtained.

(Production of color filter)
In the same manner as in Example 1, a black matrix, a colored layer, and a transparent electrode layer were formed on the substrate.

Next, a negative photosensitive resin composition (Optomer NN850 manufactured by JSR) was applied on the transparent electrode layer by spin coating, dried under reduced pressure, and prebaked at 100 ° C. for 3 minutes. Then, it exposed on the following conditions through said gradation mask.
<Exposure conditions>
・ Exposure amount: 100 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, and then heat treatment was performed at 230 ° C. for 30 minutes to simultaneously form three types of convex patterns. The cross-sectional shapes of these three types of patterns were observed with a scanning electron microscope, and the dimensions were measured. The results are shown in Table 3.

  When the above gradation mask was used in the exposure process, a spacer having a desired height could not be formed.

[Example 3]
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking on a hot plate heated to 120 ° C. for 15 minutes, a desired light-shielding film intermediate pattern was drawn with a photomask laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic Co., Ltd.).
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, using the resist pattern as an etching mask, the chromium film was etched, and the remaining resist pattern was peeled off to obtain a desired light-shielding film intermediate pattern. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding film intermediate pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and after being washed well, the chromium film (translucent film) is sputtered under the following conditions. To form a film.
<Film formation conditions>
・ Gas flow ratio Ar: N ₂ = 4: 1
・ Power: 1.3kW
・ Gas pressure: 3.5mTorr
・ Substrate transport speed: 65 cm / min
The film thickness of the semitransparent film was 10 nm. The spectrum of the semitransparent film is shown in FIG.
Next, a commercially available photoresist (ip-3500 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was again applied on the semitransparent film at a thickness of 600 nm and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, the image to be the main pattern and the slit pattern of the translucent film is drawn again with a laser drawing device (LRS11000-TFT3 manufactured by Micronic Co., Ltd.) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.). Obtained.
Next, using the resist pattern as an etching mask, the semi-transparent film and the light-shielding film are etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.), and the main pattern and slit pattern of the semi-transparent film are obtained. In addition, a light shielding film pattern was obtained. Etching was performed on the translucent film and the light shielding film.
Finally, the remaining resist is peeled off, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction is performed as necessary, and the transmissive area, light-shielding area (light-shielding film main pattern), and first translucent area A gradation mask having a (translucent film main pattern) and a third semitransparent region (light shielding film auxiliary pattern / semitransparent film slit pattern) was obtained.

(Production of color filter)
In the same manner as in Example 1, a black matrix, a colored layer, and a transparent electrode layer were formed on the substrate.

Next, a positive photosensitive resin composition (LC130 manufactured by Rohm and Haas) was applied onto the transparent electrode layer by spin coating, dried under reduced pressure, and prebaked at 100 ° C. for 3 minutes. Then, it exposed on the following conditions through said gradation mask.
<Exposure conditions>
・ Exposure dose: 60 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, and then heat treatment was performed at 230 ° C. for 30 minutes to simultaneously form three types of convex patterns. The cross-sectional shapes of these three types of patterns were observed with a scanning electron microscope, and the dimensions were measured. The results are shown in Table 4.

  By using the above-described gradation mask in the exposure process, two types of spacers (cell holding column spacers) having different heights and alignment control projections could be formed with desired dimensions.

[Comparative Example 2]
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking on a hot plate heated to 120 ° C. for 15 minutes, a desired light-shielding film intermediate pattern was drawn with a photomask laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic Co., Ltd.).
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, using the resist pattern as an etching mask, the chromium film was etched, and the remaining resist pattern was peeled off to obtain a desired light-shielding film intermediate pattern. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding film intermediate pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and after being thoroughly cleaned, a chromium film (first translucent film) is sputtered under the following conditions: The film was formed by the method.
<Film formation conditions>
・ Gas flow ratio Ar: N ₂ = 4: 1
・ Power: 1.3kW
・ Gas pressure: 3.5mTorr
・ Substrate transport speed: 65 cm / min
The film thickness of the first translucent film was 10 nm. The spectrum of the first translucent film is shown in FIG.
Next, a commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was again applied on the first translucent film at a thickness of 600 nm and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, an image to be the main pattern of the first translucent film is drawn again with a laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern. It was.
Next, using the resist pattern as an etching mask, the first translucent film was etched with a commercially available cerium nitrate wet etchant (MR-ES, manufactured by The Inktec Co., Ltd.) to obtain a main pattern of the first translucent film. . Etching was performed on the first translucent film.

Next, the substrate on which the light-shielding film intermediate pattern and the main pattern of the one semi-transparent film are formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and washed well, and then the chromium film (second semi-transparent) Film) was formed by sputtering under the following conditions.
<Film formation conditions>
・ Gas flow ratio Ar: N ₂ = 4: 1
・ Power: 1.3kW
・ Gas pressure: 3.5mTorr
-Substrate transport speed: 45 cm / min
The film thickness of the second translucent film was 30 nm. The spectrum of the second translucent film is shown in FIG.
Next, a commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was again applied on the second translucent film at a thickness of 600 nm and baked on a hot plate heated to 120 ° C. for 15 minutes. Subsequently, the image that becomes the main pattern of the second translucent film is drawn again with a laser drawing device (LRS11000-TFT3 manufactured by Micronic Co., Ltd.) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Co., Ltd.) to obtain a resist pattern. It was.
Next, using the resist pattern as an etching mask, the second semitransparent film and the light-shielding film are etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.), and the main pattern of the second semitransparent film Got. Etching was performed on the second translucent film and the light shielding film.
Lastly, the remaining resist is stripped, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction is performed as necessary, so that a transmissive area, a light-shielding area (light-shielding film main pattern), and a semi-transparent area a ( A gradation mask having a first translucent film main pattern) and a translucent region b (second translucent film main pattern) was obtained.

(Production of color filter)
In the same manner as in Example 1, a black matrix, a colored layer, and a transparent electrode layer were formed on the substrate.

Next, a positive photosensitive resin composition (LC130 manufactured by Rohm and Haas) was applied onto the transparent electrode layer by spin coating, dried under reduced pressure, and prebaked at 100 ° C. for 3 minutes. Then, it exposed on the following conditions through said gradation mask.
<Exposure conditions>
・ Exposure dose: 60 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, and then heat treatment was performed at 230 ° C. for 30 minutes to simultaneously form three types of convex patterns. The cross-sectional shapes of these three types of patterns were observed with a scanning electron microscope, and the dimensions were measured. The results are shown in Table 5.

  Similar results were obtained in Comparative Example 2 and Example 3. In Comparative Example 2, it took about 1.5 times as much cost to manufacture the mask as compared with Example 3, so it was confirmed that the cost can be reduced by using the gradation mask of the configuration of the present invention.

DESCRIPTION OF SYMBOLS 1, 61 ... Gradation mask 2, 62 ... Transparent substrate 3, 63 ... Light shielding film 3a, 63a ... Light shielding film main pattern 3b ... Light shielding film slit pattern 63b ... Light shielding film auxiliary pattern 63c ... Light shielding film auxiliary pattern Opening 4, 64... Translucent film 4 a, 64 a... Semitransparent film main pattern 4 b. Translucent film slit pattern 64 b. Translucent film auxiliary pattern 64 c. Semitransparent film auxiliary pattern opening 11, 71. Transmission area 12, 72 ... Light-shielding area 13, 73 ... First translucent area 14, 74 ... Second translucent area 15, 75 ... Third translucent area 16, 76 ... Fourth translucent area

Claims (7)

A gradation mask having a transparent substrate, a light-shielding film formed in a pattern on the transparent substrate, and a translucent film having a transmittance adjusting function,
A transparent region having only the transparent substrate, a light shielding region in which the main pattern of the light shielding film is provided on the transparent substrate, and an auxiliary pattern of the light shielding film and a pattern of the semitransparent film are provided on the transparent substrate. , At least one of the auxiliary pattern of the light shielding film and the opening has a dimension not more than a resolution limit, and the semitransparent film is formed on the transparent substrate at the opening of the auxiliary pattern of the light shielding film, A gradation mask, wherein the auxiliary pattern of the light shielding film has a third semi-transparent region having a slit shape.   The gradation mask according to claim 1, wherein the translucent film is formed over the entire third translucent region.   2. The gradation mask according to claim 1, wherein the semi-transparent film is formed only in the opening portion of the auxiliary pattern of the light-shielding film in the third semi-transparent region.   The gradation mask according to any one of claims 1 to 3, further comprising a first semi-transparent region in which only the main pattern of the semi-transparent film is provided on the transparent substrate.   An auxiliary pattern of the light shielding film is provided on the transparent substrate, and at least one of the auxiliary pattern of the light shielding film and the opening has a dimension not more than a resolution limit, and the opening of the auxiliary pattern of the light shielding film The gradation mask according to any one of claims 1 to 4, further comprising a fourth translucent region in which the transparent substrate is exposed.   6. The gradation mask according to claim 5, wherein the auxiliary pattern has a slit shape in the fourth translucent region.   A gradation mask for manufacturing a display device, wherein the gradation mask according to claim 1 is used for manufacturing a display device.

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