JP2002189280A - Gray tone mask and method for producing the same - Google Patents
Gray tone mask and method for producing the sameInfo
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- JP2002189280A JP2002189280A JP2000386050A JP2000386050A JP2002189280A JP 2002189280 A JP2002189280 A JP 2002189280A JP 2000386050 A JP2000386050 A JP 2000386050A JP 2000386050 A JP2000386050 A JP 2000386050A JP 2002189280 A JP2002189280 A JP 2002189280A
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- film
- transmittance
- gray
- tone
- light
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、グレートーンマス
ク及びその製造方法等に関する。The present invention relates to a gray-tone mask and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年、大型ＬＣＤ用マスクの分野におい
て、グレートーンマスクを用いてマスク枚数を削減する
試みがなされている（例えば月刊ＦＰＤ Intelligenc
e，1999年5月）。ここで、グレートーンマスクは、例え
ば、図５（１）に示すように、遮光部１と、透光部２
と、グレートーン部３とを有する。グレートーン部３
は、グレートーンマスクを使用する大型ＬＣＤ用露光機
の解像限界以下の微細遮光パターン３ａを形成した領域
であって、この領域を透過する光の透過量を低減しこの
領域による照射量を低減してフォトレジストの膜厚を選
択的に変えることを目的として形成される。遮光部１と
微細遮光パターン３ａはともにクロムやクロム化合物等
の同じ材料からなる同じ厚さの膜から通常形成されてい
る。透光部２と微細透光部３ｂはともに、透明基板上に
おいて遮光膜等が形成されていない透明基板の部分であ
る。グレートーンマスクを使用する大型ＬＣＤ用露光機
の解像限界は、ステッパ方式の露光機で約３μｍ、ミラ
ープロジェクション方式の露光機で約４μｍである。こ
のため、例えば、図５（１）でグレートーン部における
微細透光部３ｂのスペース幅を３μｍ未満、露光機の解
像限界以下の微細遮光パターン３ａのライン幅を３μｍ
未満とする。上記大型ＬＣＤ用露光機で露光した場合、
グレートーン部３を通過した露光光は全体として露光量
が足りなくなるため、このグレートーン部３を介して露
光したポジ型フォトレジストは膜厚が薄くなるだけで基
板上に残る。つまり、レジストは露光量の違いによって
通常の遮光部１に対応する部分とグレートーン部３に対
応する部分で現像液に対する溶解性に差ができるため、
現像後のレジスト形状は、図５（２）に示すように、通
常の遮光部１に対応する部分１’が例えば約１．３μ
ｍ、グレートーン部３に対応する部分３’が例えば約
０．３μｍ、透光部２に対応する部分はレジストが残存
しない部分２’となる。そして、レジストが残存しない
部分２’で被加工基板の第１のエッチングを行い、グレ
ートーン部３に対応する薄い部分３’のレジストをアッ
シング等によって除去しこの部分で第２のエッチングを
行うことによって、１枚のマスクで従来のマスク２枚分
の工程を行い、マスク枚数を削減する。2. Description of the Related Art In recent years, in the field of masks for large LCDs, attempts have been made to reduce the number of masks using a gray tone mask (for example, monthly FPD Intelligenc).
e, May 1999). Here, the gray-tone mask includes, for example, as shown in FIG.
And a gray tone portion 3. Gray tone part 3
Is a region where a fine light-shielding pattern 3a smaller than the resolution limit of a large-sized LCD exposing machine using a gray-tone mask is formed, the amount of light transmitted through this region is reduced, and the amount of irradiation by this region is reduced. Then, it is formed for the purpose of selectively changing the thickness of the photoresist. Both the light-shielding portion 1 and the fine light-shielding pattern 3a are usually formed from films of the same thickness made of the same material such as chromium or a chromium compound. Both the light transmitting portion 2 and the fine light transmitting portion 3b are portions of the transparent substrate on which no light-shielding film or the like is formed on the transparent substrate. The resolution limit of a large LCD exposure machine using a gray-tone mask is about 3 μm for a stepper type exposure machine and about 4 μm for a mirror projection type exposure machine. For this reason, for example, in FIG. 5A, the space width of the fine light transmitting portion 3b in the gray tone portion is less than 3 μm, and the line width of the fine light shielding pattern 3a which is equal to or less than the resolution limit of the exposure machine is 3 μm.
Less than When exposed by the above large LCD exposure machine,
Since the amount of exposure light passing through the gray-tone portion 3 becomes insufficient as a whole, the positive photoresist exposed through the gray-tone portion 3 remains on the substrate only with a reduced film thickness. In other words, the resist has a difference in solubility in the developing solution between the portion corresponding to the normal light shielding portion 1 and the portion corresponding to the gray tone portion 3 due to the difference in the exposure amount.
As shown in FIG. 5B, the resist shape after development is such that a portion 1 ′ corresponding to a normal light-shielding portion 1 has, for example, about 1.3 μm.
For example, a portion 3 ′ corresponding to m and the gray tone portion 3 is about 0.3 μm, and a portion corresponding to the light transmitting portion 2 is a portion 2 ′ in which no resist remains. Then, first etching of the substrate to be processed is performed in the portion 2 'where the resist does not remain, the resist in the thin portion 3' corresponding to the gray tone portion 3 is removed by ashing or the like, and second etching is performed in this portion. Thus, the process for two conventional masks is performed with one mask, and the number of masks is reduced.
【０００３】[0003]
【発明が解決しようとする課題】上述したグレートーン
マスクにおいて、グレートーンマスクを使用する大型Ｌ
ＣＤ用露光機の解像限界の微細パターンにてグレートー
ン部を形成するには、理想的には、例えば微細ライン＆
スペースパターンは２μｍ前後のピッチ（約半分の１μ
ｍ前後が微細透光部）となり、±０．２μｍ程度の精度
で微細パターンを加工する必要があるが、現在のＬＣＤ
用大型マスクの精度からみれば、非常に厳しい精度であ
る。また、現状の大型マスク自動欠陥検査装置では、２
μｍピッチパターンの欠陥検出（特にパターンのエッジ
についての欠陥検出）は非常に困難であり、また、±
０．２μｍ程度の精度で微細パターンの検査を行うこと
も非常に困難である。さらに、グレートーン部を微細パ
ターンで構成しているため、データ作成におけるデ−タ
容量が膨大になり、描画機および描画機に付随するデー
タ変換（フォーマット変換）機の能力を超えるような場
合、描画できない可能性がある。詳しくは、例えば図６
（２）に示すグレートーン部３のデータは、図６（１）
に示す遮光部１及び透光部２のデータとは重ならないよ
うに遮光部及び透光部を避けてデータを作成しなくては
ならず、データの作成が複雑になり、しかもグレートー
ン部３のデータは遮光部及び透光部のデータに沿った複
雑な形状を示しているため、グレートーン部のデータ容
量は、膨大なものとなり、図６（３）に示す合成データ
の容量も膨大なものとなる。In the above-described gray-tone mask, a large L using a gray-tone mask is used.
In order to form a gray tone portion with a fine pattern of the resolution limit of a CD exposure machine, ideally, for example, a fine line &
The space pattern has a pitch of about 2 μm (about half of 1 μm).
m is a fine light-transmitting part), and it is necessary to process a fine pattern with an accuracy of about ± 0.2 μm.
The precision is very strict in view of the precision of large masks for industrial use. Also, with the current large mask automatic defect inspection system,
It is very difficult to detect a defect of a μm pitch pattern (especially, a defect of a pattern edge).
It is also very difficult to inspect a fine pattern with an accuracy of about 0.2 μm. Further, in the case where the gray tone portion is constituted by a fine pattern, the data capacity in data creation becomes enormous, and exceeds the capability of a drawing machine and a data conversion (format conversion) machine attached to the drawing machine. You may not be able to draw. See, for example, FIG.
The data of the gray tone portion 3 shown in (2) is shown in FIG.
The data must be created avoiding the light-shielding portion and the light-transmitting portion so as not to overlap the data of the light-shielding portion 1 and the light-transmitting portion 2 shown in FIG. 6 shows a complicated shape along with the data of the light-shielding part and the light-transmitting part, the data capacity of the gray-tone part becomes enormous, and the capacity of the synthetic data shown in FIG. It will be.
【０００４】一方、透明基板上に設けたクロム単層膜の
膜厚を部分的に変化させ、膜厚の厚い部分を遮光部と
し、中間膜厚の部分をグレートーン部とし、膜厚のゼロ
の部分を透光部としたグレートーンマスクが知られてい
る。しかし、クロム膜は透過率が低い（遮光性が高い）
ことから透過率０％を得る膜厚が薄いため、中間膜厚の
部分について中間の所定透過率が得られる膜厚となるよ
うにハーフエッチングすることは難しい。そこで、透明
基板上に設けたクロム化合物単層膜の膜厚を部分的に変
化させたグレートーンマスクが提案されている（特開平
７−４９４１０号公報）。この場合、クロム化合物単層
膜は透過率０％を得る膜厚が４０００オンク゛ストローム程度と
厚いため、中間膜厚の部分について中間の所定透過率が
得られる膜厚となるようにハーフエッチングすることは
クロム単層膜の場合に比べ容易となる。しかし、この方
法は、膜厚が厚すぎるため、アスペクト比（パターン寸
法と高さの比）が高くその結果遮光部のパターン形状や
パターン精度が悪くなり、またエッチング時間も長くな
る。On the other hand, the thickness of the chromium single-layer film provided on the transparent substrate is partially changed so that a thick portion is a light-shielding portion, an intermediate portion is a gray tone portion, and a zero-thickness portion is formed. Is known as a light-transmitting portion. However, chromium film has low transmittance (high light-shielding property)
Therefore, it is difficult to half-etch a portion having an intermediate film thickness so as to obtain an intermediate predetermined transmittance, since the film thickness for obtaining the transmittance of 0% is small. Therefore, a gray-tone mask in which the thickness of a chromium compound single-layer film provided on a transparent substrate is partially changed has been proposed (Japanese Patent Laid-Open No. 7-49410). In this case, since the chromium compound single-layer film has a thickness of about 4000 angstroms for obtaining a transmittance of 0%, it is not possible to perform half-etching for a portion having an intermediate thickness so as to obtain an intermediate predetermined transmittance. It is easier than in the case of a chromium single layer film. However, in this method, since the film thickness is too thick, the aspect ratio (the ratio between the pattern size and the height) is high, and as a result, the pattern shape and pattern accuracy of the light shielding portion are deteriorated, and the etching time is long.
【０００５】本発明は、上述した問題点を解消したグレ
ートーンマスク及びその製造方法等の提供を目的とす
る。[0005] It is an object of the present invention to provide a gray-tone mask which solves the above-mentioned problems, and a method of manufacturing the same.
【０００６】[0006]
【課題を解決するための手段】本発明は以下の構成を有
する。The present invention has the following arrangement.
【０００７】（構成１） 遮光部と、透光部と、露光光
の一部を透過するグレートーン部とを有するグレートー
ンマスクにおいて、前記遮光部を構成する膜が、透明基
板側から主にグレートーン部における透過率を制御する
透過率制御膜と遮光部における透過率を低減する透過率
低減膜とにより少なくとも構成されており、前記透過率
制御膜と前記透過率低減膜とが同一の金属を含む膜から
なり、前記グレートーン部が、前記遮光部を構成する膜
がその厚さ方向に一部除去されてなることを特徴とする
グレートーンマスク。(Structure 1) In a gray-tone mask having a light-shielding portion, a light-transmitting portion, and a gray-tone portion that transmits a part of the exposure light, a film forming the light-shielding portion is mainly formed from the transparent substrate side. At least a transmittance control film for controlling transmittance in a gray tone portion and a transmittance reduction film for reducing transmittance in a light shielding portion, wherein the transmittance control film and the transmittance reduction film are made of the same metal Wherein the gray tone portion is obtained by partially removing a film constituting the light shielding portion in a thickness direction thereof.
【０００８】（構成２） 前記透過率制御膜が、前記透
過率低減膜のエッチングレートに比べて同等又は遅い材
料であることを特徴とする構成１記載のグレートーンマ
スク。(Structure 2) The gray-tone mask according to Structure 1, wherein the transmittance control film is made of a material equal to or slower than an etching rate of the transmittance reduction film.
【０００９】（構成３） 前記透過率制御膜がクロム化
合物からなり、前記透過率低減膜がクロムからなること
を特徴とする構成２記載のグレートーンマスク。(Structure 3) The gray-tone mask according to Structure 2, wherein the transmittance control film is made of a chromium compound, and the transmittance reducing film is made of chromium.
【００１０】（構成４） 前記透過率低減膜上に反射防
止膜を有することを特徴とする構成１〜３のいずれかに
記載のグレートーンマスク。(Structure 4) The gray-tone mask according to any one of structures 1 to 3, further comprising an antireflection film on the transmittance reducing film.
【００１１】（構成５） 構成１〜４のいずれかに記載
のグレートーンマスクの製造方法において、透明基板上
に、少なくとも透過率制御膜、透過率低減膜が順次形成
されたマスクブランクを準備する工程と、前記ブランク
上にレジスト膜を形成する工程と、透光部を形成する部
分に対してレジストが完全に感光される露光量で、また
グレートーン部を形成する部分に対してレジストが完全
に感光される露光量より少ない露光量でレジスト膜を露
光する工程と、現像処理を行い、遮光部を形成する部分
とグレートーン部を形成する部分とでレジストの残膜値
が異なるようなレジストパターンを形成する工程と、前
記レジストパターンをマスクとして透過率低減膜、透過
率制御膜をエッチングして透光部を形成する工程と、前
記グレートーン部上に残存するレジストパターンのみを
除去する工程と、前工程で残存したレジストパターンを
マスクとして透過率低減膜及び透過率制御膜の積層膜の
少なくとも一部を除去する工程と、さらに残存したレジ
ストパターンを剥離する工程と、を含むことを特徴とす
るグレートーンマスクの製造方法。(Structure 5) In the method for manufacturing a gray-tone mask according to any one of Structures 1 to 4, a mask blank in which at least a transmittance control film and a transmittance reduction film are sequentially formed on a transparent substrate is prepared. A step of forming a resist film on the blank, and an exposure amount at which the resist is completely exposed to the light-transmitting portion, and the resist is completely exposed to the gray-tone portion. Resist exposure with a light exposure less than the light exposure exposed to the resist, and a development process in which the residual film value of the resist is different between the part where the light shielding part is formed and the part where the gray tone part is formed Forming a pattern, etching the transmittance reducing film and the transmittance control film using the resist pattern as a mask to form a light transmitting portion, and forming a light transmitting portion on the gray tone portion. Removing only the remaining resist pattern, and removing at least a part of the laminated film of the transmittance reducing film and the transmittance control film using the resist pattern remaining in the previous process as a mask, and further removing the remaining resist pattern. A method of manufacturing a gray-tone mask, comprising the steps of:
【００１２】（構成６） 構成１〜４のいずれかに記載
のグレートーンマスクを製造するためのグレートーンマ
スクブランクであって、透明基板上に、透明基板側から
主にグレートーン部における透過率を制御する透過率制
御膜と遮光部における透過率を低減する透過率低減膜と
を少なくとも有し、前記透過率制御膜と前記透過率低減
膜とが同一の金属を含む膜からなり、かつ、前記透過率
制御膜と前記透過率低減膜とで遮光膜を構成することを
特徴とするグレートーンマスクブランク。(Structure 6) A gray-tone mask blank for producing the gray-tone mask according to any one of Structures 1 to 4, wherein the transmittance is mainly on a gray-tone portion on the transparent substrate from the transparent substrate side. Having at least a transmittance control film for controlling the transmittance and a transmittance reducing film for reducing the transmittance in the light shielding portion, wherein the transmittance control film and the transmittance reducing film are made of a film containing the same metal, and A gray-tone mask blank, wherein a light-shielding film is formed by the transmittance control film and the transmittance reduction film.
【００１３】（構成７） グレートーンマスクがＬＣＤ
用マスク又はＰＤＰ用マスクであることを特徴とする構
成１〜４のいずれかに記載のグレートーンマスク。(Structure 7) Gray tone mask is LCD
The gray-tone mask according to any one of Configurations 1 to 4, which is a mask for PDP or a mask for PDP.
【００１４】[0014]
【作用】構成１によれば、遮光部を構成する膜を、透過
率制御膜とこの透過率制御膜より光透過率が低い透過率
低減膜との２層構造とすることによって、膜厚を透過率
低減膜単層膜（例えば従来のクロム単層膜）に比べて厚
く、透過率制御膜単層膜（例えば従来のクロム化合物単
層膜）に比べて薄くすることができるため、ハーフエッ
チングによるグレートーン部の膜厚制御が可能であり、
かつ、エッチング時間の短縮が図れると共に、アスペク
ト比が低くその結果遮光部のパターン形状やパターン精
度が良好となる。なお、遮光部を構成する透過率低減膜
と過率制御膜の積層膜が厚さ方向に一部除去されてなる
グレートーン部は、透過率低減膜を除去した態様の他、
透過率低減膜を厚さ方向に一部除去した態様や、透過率
低減膜に加え透過率制御膜を厚さ方向に一部除去した態
様が含まれる。According to the first aspect, the film constituting the light shielding portion has a two-layer structure of a transmittance control film and a transmittance reduction film having a lower light transmittance than the transmittance control film. Half-etching is possible because the thickness can be reduced as compared with a single-layer film of a transmittance reducing film (for example, a conventional chromium single-layer film) and thinner than a single-layer film of a transmittance control film (for example, a conventional chromium compound single-layer film). It is possible to control the thickness of the gray tone area by
In addition, the etching time can be reduced, and the aspect ratio is low. As a result, the pattern shape and pattern accuracy of the light shielding portion are improved. Note that the gray-tone portion in which the laminated film of the transmittance reducing film and the excess ratio control film constituting the light shielding portion is partially removed in the thickness direction is, other than the mode in which the transmittance reducing film is removed,
It includes an embodiment in which the transmittance reducing film is partially removed in the thickness direction, and an embodiment in which the transmittance controlling film is partially removed in the thickness direction in addition to the transmittance reducing film.
【００１５】構成２によれば、透過率制御膜が、透過率
低減膜のエッチングレートに比べて同等又は遅い材料で
あることによって、エッチングにより透過率低減膜を除
去する際に、透過率制御膜までエッチングされるのを低
減でき、したがって、透過率制御膜の膜厚の均一性が高
いグレートーンマスクを容易に得ることができる。構成
２では、透過率制御膜を、透過率を制御した薄い金属層
（例えば、クロム化合物、ＭｏＳｉ、Ｓｉ、Ｗ、Ａｌ）
で構成し、透過率低減膜を、遮光性が高く薄い膜（例え
ば、クロム、Ｓｉ、Ｗ、Ａｌ）で構成することが好まし
い。また、互いに付着性の良好な組み合わせが好まし
い。According to the second aspect, since the transmittance control film is made of a material which is equal to or slower than the etching rate of the transmittance reduction film, the transmittance control film is removed when the transmittance control film is removed by etching. Etching can be reduced, and a gray-tone mask with high uniformity of the thickness of the transmittance control film can be easily obtained. In the configuration 2, the transmittance control film is formed of a thin metal layer (for example, a chromium compound, MoSi, Si, W, or Al) whose transmittance is controlled.
And the transmittance reduction film is preferably formed of a thin film having a high light-shielding property (for example, chromium, Si, W, or Al). Further, a combination having good adhesion to each other is preferable.
【００１６】構成３によれば、透過率制御膜がクロム化
合物（特に酸化クロム）からなることによって、透過率
を制御した均一な膜厚の透過率制御膜が得られやすく、
また透過率低減膜がクロムからなることことによって、
透過率低減膜を薄く構成できる。上記構成２及び３にお
いてクロム化合物としては、酸化クロム（ＣｒＯx）、
窒化クロム（ＣｒＮx）、酸窒化クロム（ＣｒＯxＮ
y）、フッ化クロム（ＣｒＦx）や、これらの膜に炭素や
水素を含むものが挙げられる。According to the third aspect, since the transmittance control film is made of a chromium compound (especially chromium oxide), it is easy to obtain a transmittance control film having a uniform thickness and a controlled transmittance.
In addition, since the transmittance reducing film is made of chromium,
The transmittance reducing film can be made thin. In the above structures 2 and 3, the chromium compound may be chromium oxide (CrOx),
Chromium nitride (CrNx), chromium oxynitride (CrOxN
y), chromium fluoride (CrFx), and those containing carbon or hydrogen in these films.
【００１７】構成４によれば、透過率低減膜上に反射防
止膜を設けたマスクブランクを用いることによって、こ
のマスクブランクをエッチング加工するだけで、反射防
止層を有するグレートーンマスクが得られる。According to the fourth aspect, by using a mask blank having an anti-reflection film provided on a transmittance reducing film, a gray-tone mask having an anti-reflection layer can be obtained only by etching the mask blank.
【００１８】構成５によれば、各領域について露光量に
応じてレジスト膜厚を異ならしめることによって、後工
程でレジストプロセス（レジスト塗布、描画（露光）、
現像）が不要となる。According to the fifth aspect, the resist film thickness in each region is varied according to the exposure amount, so that the resist process (resist coating, drawing (exposure),
Development) becomes unnecessary.
【００１９】構成６によれば、このマスクブランクを用
いると、各層の膜の除去工程と、レジストの減膜処理工
程だけで、グレートーンマスクを製造できる。また、遮
光部のパターン形状やパターン精度に優れ、グレートー
ン部（半透過膜）の透過特性の均一性等に優れた高品質
のグレートーンマスクが得られる。According to the sixth aspect, when this mask blank is used, a gray-tone mask can be manufactured only by the step of removing the film of each layer and the step of reducing the thickness of the resist. In addition, a high-quality gray-tone mask having excellent pattern shape and pattern accuracy of the light-shielding portion and excellent uniformity of transmission characteristics of the gray-tone portion (semi-transmissive film) can be obtained.
【００２０】構成７によれば、ＬＣＤ用グレートーンマ
スクブランクの場合、基板サイズが大きく膜厚の均一性
を確保するのが難しいため、単層膜を中間の膜厚にハー
フエッチングする方法ではマスクブランクにおける膜厚
のばらつきを考慮するとハーフエッチングによる膜厚制
御を厳密に行わなければならず（具体的にはハーフエッ
チングによるエッチング量の面内ばらつきをほぼゼロに
抑える必要がある）、実際上はこのような厳密な膜厚制
御は困難であることから、このような方法は実用性に難
がある。これに対し、本発明のグレートーンマスクの製
造方法は、このような問題がなく、したがって、本発明
は、ＬＣＤ（液晶表示装置）用の大型グレートーンマス
ク（カラーフィルタや薄膜トランジスタ（ＴＦＴ）作製
用など）やＰＤＰ（プラズマディスプレイパネル）用の
大型グレートーンマスク等を実用化する上で必要不可欠
である。According to the configuration 7, in the case of a gray-tone mask blank for LCD, since the substrate size is large and it is difficult to ensure the uniformity of the film thickness, the method of half-etching a single-layer film to an intermediate film thickness has a problem. In consideration of the variation in the film thickness in the blank, the film thickness must be strictly controlled by half-etching (specifically, the in-plane variation of the etching amount by the half-etching needs to be suppressed to almost zero). Since such strict film thickness control is difficult, such a method has difficulty in practicability. On the other hand, the method for manufacturing a gray-tone mask according to the present invention does not have such a problem. Therefore, the present invention relates to a method for manufacturing a large gray-tone mask (a color filter or a thin film transistor (TFT)) for an LCD (liquid crystal display device). Etc.) and large gray tone masks for PDPs (plasma display panels) are indispensable for practical use.
【００２１】なお、上記本発明のグレートーンマスク及
びその製造方法によれば、以下の効果が得られる。グレ
ートーンマスクを使用する大型ＬＣＤ用露光機の解像限
界の微細パターンにてグレートーン部を形成する必要が
ないので、グレートーン部における微細パターンの加工
精度の問題が生じ得ない。グレートーン部を透過率制御
膜の膜厚で制御することにより、検出波形が安定するた
め、微細パターンにてグレートーン部を形成する場合に
比べ、欠陥険出が容易である。予め、透過率を制御した
透過率制御膜を使用しているため、透過率の制御が容易
である。遮光部及び透光部のパターン形状が複雑であっ
ても、グレートーン部（半透過部）は露光量を調節して
グレートーン部全面に一様に描画する（いわゆるべた露
光する）ので、グレートーン部の描画データ量は、微細
パターンからなるグレートーン部を描画する場合に比
べ、少なくなり、描画が容易となる。According to the gray-tone mask of the present invention and the method of manufacturing the same, the following effects can be obtained. Since it is not necessary to form a gray-tone portion with a fine pattern of the resolution limit of a large-sized LCD exposure machine using a gray-tone mask, there is no problem in processing accuracy of the fine pattern in the gray-tone portion. By controlling the gray tone portion with the film thickness of the transmittance control film, the detection waveform is stabilized, so that defects can be easily spotted as compared with the case where the gray tone portion is formed by a fine pattern. Since the transmittance control film whose transmittance is controlled in advance is used, the transmittance can be easily controlled. Even if the pattern shapes of the light-shielding portion and the light-transmitting portion are complicated, the gray-tone portion (semi-transmissive portion) adjusts the amount of exposure and uniformly draws over the entire gray-tone portion (so-called solid exposure). The drawing data amount of the tone portion is smaller than that in the case of drawing a gray tone portion composed of a fine pattern, and drawing becomes easier.
【００２２】[0022]
【発明の実施の形態】以下、本発明の実施の形態につい
て説明する。遮光部、透光部及びグレートーン部の全て
のパターンデータを組み込んだ場合の合成データが、図
１（１）に示すように、遮光部１及び透光部２（例えば
ＴＦＴのアモルファスシリコンパターン）と、その周辺
に形成されるグレートーン部３（半透過部）で構成され
た場合を例にとる。この場合、図１（２）に示す遮光部
１及び透光部２のデータと、図１（３）に示すグレート
ーン部３のデータに分離する。そして、透光部２をレジ
ストが完全に除去できる露光量（１００％）で描画した
後、グレートーン部３をレジストが完全に感光される露
光量の約半分の露光量で描画することにより図１（１）
に示すパターンの描画を行うことができる。図１（１）
に示す描画パターンであれば、グレートーン部３に解像
限界以下の微細パターンを形成する必要がなく、グレー
トーン部に微細パターンを形成する場合のデータ容量の
問題は解決される。なお、透光部２とグレートーン部３
の描画の順序については順不同であり、どららが先でも
構わない。上記図１（１）に示す描画パターンを、レジ
スト上（ポジレジストでの描画例）に描画した際の、露
光量の分布は、図２に示すようになる。つまり、透光部
２の露光量は１００％、グレートーン部３の露光量は５
０％、遮光部１の露光量は０％（露光されない）とな
る。Embodiments of the present invention will be described below. As shown in FIG. 1A, the combined data obtained when all the pattern data of the light-shielding portion, the light-transmitting portion, and the gray-tone portion are incorporated is a light-shielding portion 1 and a light-transmitting portion 2 (for example, an amorphous silicon pattern of a TFT). And a gray-tone portion 3 (semi-transmissive portion) formed therearound. In this case, the data of the light shielding unit 1 and the light transmitting unit 2 shown in FIG. 1 (2) and the data of the gray tone unit 3 shown in FIG. 1 (3) are separated. Then, the light-transmitting portion 2 is drawn at an exposure amount (100%) at which the resist can be completely removed, and then the gray-tone portion 3 is drawn at an exposure amount that is about half of the exposure amount at which the resist is completely exposed. 1 (1)
Can be drawn. Fig. 1 (1)
With the drawing pattern shown in (1), it is not necessary to form a fine pattern smaller than the resolution limit in the gray tone portion 3, and the problem of data capacity when forming a fine pattern in the gray tone portion is solved. The translucent section 2 and the gray tone section 3
The order of drawing is not limited, and either one may be used first. FIG. 2 shows the distribution of the exposure amount when the drawing pattern shown in FIG. 1A is drawn on a resist (a drawing example using a positive resist). That is, the exposure amount of the light transmitting portion 2 is 100%, and the exposure amount of the gray tone portion 3 is 5%.
The exposure amount of the light shielding portion 1 is 0% (not exposed).
【００２３】次に、グレートーンマスクの製造手順につ
いて説明する。図３はグレートーンマスクの製造手順を
示す部分断面図であり、図２のＩ−Ｉ線断面を示す。Next, the procedure for manufacturing the gray-tone mask will be described. FIG. 3 is a partial cross-sectional view showing the procedure for manufacturing the gray-tone mask, and shows a cross section taken along line II of FIG.
【００２４】まず、図３（１）に示すように、透明基板
１１上に、透過率制御膜１２、透過率低減膜１３及びノ
ボラック系ポジレジスト膜１４を順次形成した基板に対
して、図２に示す露光分布で描画を行った場合、エリア
Ｂは未露光となり、エリアＡは露光・現像後の膜厚がエ
リアＢの残膜値の約半分になるように描画の際の露光量
を調節する。エリアＣはレジストパターニングに不足し
ないだけの露光量を与える。この際の描画方法は、レー
ザ描画機で、露光量１００％の光量にてエリアＣの描画
を行なった後、露光量５０％程度の光量で工リアＡの描
画を行なう。エリアＡ、Ｃの描画順序についてはどらら
が先でも構わない。First, as shown in FIG. 3A, a substrate in which a transmittance control film 12, a transmittance reduction film 13, and a novolak-based positive resist film 14 are sequentially formed on a transparent substrate 11 is shown in FIG. In the case of drawing with the exposure distribution shown in (1), the exposure amount at the time of drawing is adjusted so that the area B becomes unexposed and the film thickness of the area A after exposure and development becomes about half of the remaining film value of the area B. I do. Area C provides an exposure amount sufficient for resist patterning. The drawing method at this time is such that after drawing the area C with a light amount of 100% exposure by a laser drawing machine, drawing of the area A is performed with a light amount of about 50% exposure. With respect to the drawing order of the areas A and C, whichever may come first.
【００２５】次に、図３（２）に示すように、ウエット
処理にて膜厚差を有するようにレジスト膜１４を加工
（現像・減膜処理）する。この際、レジストの膜厚は、
エリアＡで工リアＢの約半分程度となり、エリアＣでは
完全に除去された状態となる。なお、ウエット処理は、
例えば、無機アルカリ（例えばＫＯＨ、濃度0.63Ｎ）も
しくは有機アルカリ（例えばＴＭＡＨ、濃度2.3％）な
どの現像液にて処理を行う。Next, as shown in FIG. 3B, the resist film 14 is processed (development / thinning processing) so as to have a film thickness difference by wet processing. At this time, the thickness of the resist is
In the area A, the area is about half that of the rear area B, and in the area C, the area is completely removed. The wet processing is
For example, the treatment is performed with a developer such as an inorganic alkali (for example, KOH, concentration 0.63 N) or an organic alkali (for example, TMAH, concentration 2.3%).
【００２６】次に、図３（３）に示すように、レジスト
を完全に除去したエリアＣに露出する透過率低減膜１３
及び透過率制御膜１２をウエットエッチングもしくはド
ライエッチングにて完全に除去する。Next, as shown in FIG. 3C, the transmittance reducing film 13 exposed in the area C where the resist has been completely removed.
And the transmittance control film 12 is completely removed by wet etching or dry etching.
【００２７】次に、図３（４）に示すように、ドライ処
理（例えばＯ2アッシング）によりエリアＡのレジスト
を完全に除去する。この結果、エリアＢ（遮光部）のレ
ジスト膜厚は当初の約半分になる。Next, as shown in FIG. 3D, the resist in the area A is completely removed by dry processing (eg, O 2 ashing). As a result, the resist film thickness in the area B (light shielding portion) is reduced to about half of the initial value.
【００２８】次に、図３（５）に示すように、エリアＡ
の透過率低減膜１３をウエットエッチングもしくはドラ
イエッチングにて除去し、グレートーン部を形成する。
この際、エリアＡの透過率制御膜は、透過率低減膜より
エッチングレートが遅い材料を選択すれば、透過率制御
膜のエッチングを抑えることができるため、所定の膜厚
で透過率制御された透過率制御膜からなるグレートーン
部を得ることが可能である。Next, as shown in FIG.
Is removed by wet etching or dry etching to form a gray tone portion.
At this time, for the transmittance control film in the area A, if a material having a lower etching rate than the transmittance reducing film is selected, the etching of the transmittance control film can be suppressed, and thus the transmittance is controlled at a predetermined film thickness. It is possible to obtain a gray tone portion made of a transmittance control film.
【００２９】次に、図３（６）に示すように、残ったレ
ジストを有機アルカリもしくはドライ処理（Ｏ2アッシ
ング）にて除去することによって、エリアＢに遮光部、
エリアＡにグレートーン部、エリアＣに透光部がそれぞ
れ形成されたグレートーンマスクが得られる。Next, as shown in FIG. 3 (6), the remaining resist is removed by an organic alkali or dry treatment (O 2 ashing), so that a light shielding portion
A gray-tone mask in which a gray-tone portion is formed in the area A and a light-transmitting portion is formed in the area C is obtained.
【００３０】なお、上記実施の形態において、グレート
ーンマスクを作製するためのマスクブランクは、例え
ば、石英基板などの透明基板上に、ＣｒＯ等の透過率を
制御した厚さの透過率制御膜をスパッタ法等により成膜
し、Ｃｒ等の遮光性を有する厚さの透過率低減膜をスパ
ッタ法等により成膜し、この透過率低減膜上にレジスト
を５０００〜１００００オンク゛ストロームの範囲で塗布して作
製する。この際、透過率低減膜と透過率制御膜とを合わ
せた光学濃度は３．０以上とする。透過率制御膜の厚さ
は、透過率制御膜の透過率が２０％〜５０％となるよう
な膜厚とする。例として、透過率制御膜にＣｒＯを用い
た場合には、透過率制御膜の膜厚が６５０〜１４００オン
ク゛ストロームの範囲（図４）になるようにする。そしてその
上の透過率低減膜にＣｒを用いた場合には、Ｃｒ透過率
低減膜の膜厚は５００オンク゛ストローム以上になるようにす
る。また、透過率制御膜と透過率低減膜とを合わせた遮
光膜の厚さは１４００〜２０００オンク゛ストロームとすること
が好ましい。１４００オンク゛ストロームより薄いとハーフエッ
チングによる膜厚制御性が悪化し、２０００オンク゛ストローム
を超えるとパターン形状やパターン精度が悪化する。In the above-described embodiment, the mask blank for producing the gray-tone mask is, for example, a transparent substrate such as a quartz substrate on which a transmittance control film having a controlled thickness such as CrO is applied. The film is formed by a sputtering method or the like, and a transmittance-reducing film having a light-shielding property such as Cr is formed by a sputtering method or the like, and a resist is coated on the transmittance-reducing film in a range of 5000 to 10000 angstroms. Make it. At this time, the combined optical density of the transmittance reduction film and the transmittance control film is 3.0 or more. The thickness of the transmittance control film is set so that the transmittance of the transmittance control film is 20% to 50%. As an example, when CrO is used for the transmittance control film, the thickness of the transmittance control film is set to be in a range of 650 to 1400 angstroms (FIG. 4). When Cr is used for the transmittance reducing film thereon, the thickness of the Cr transmittance reducing film is set to be 500 Å or more. Further, it is preferable that the thickness of the light shielding film including the transmittance control film and the transmittance reducing film be 1400 to 2000 angstroms. If the thickness is less than 1400 Å, the film thickness controllability by half etching deteriorates, and if it exceeds 2,000 Å, the pattern shape and pattern accuracy deteriorate.
【００３１】なお、本発明は上述した実施の形態等に限
定されるものではない。例えば、マスクブランクの段階
において、透過率低減膜上に反射防止層を設けることが
できる。この場合、透過率低減膜と反射防止膜は通常同
時にエッチングできるので工程増は生じない。反射防止
層は、例えば酸化クロム（ＣｒＯx）、窒化クロム（Ｃ
ｒＮx）、酸窒化クロム（ＣｒＯxＮy）などで形成でき
る。また、ウエット処理の替わりにドライエッチング又
はドライ処理を行うことができ、ドライエッチング又は
ドライ処理の替わりにウエット処理を行うこともでき
る。また、レーザ描画機による露光に限定されず、他の
露光装置を用いても良い。グレートーン部の光照射量
は、所定の膜厚のフォトレジストを十分に感光されるの
に必要な光照射量の５０％に限定されない。The present invention is not limited to the above-described embodiment and the like. For example, at the stage of mask blank, an antireflection layer can be provided on the transmittance reducing film. In this case, the transmittance reduction film and the antireflection film can be usually simultaneously etched, so that there is no increase in the process. The antireflection layer is made of, for example, chromium oxide (CrOx), chromium nitride (C
rNx) and chromium oxynitride (CrOxNy). Further, dry etching or dry processing can be performed instead of wet processing, and wet processing can be performed instead of dry etching or dry processing. Further, the present invention is not limited to exposure using a laser drawing machine, and another exposure apparatus may be used. The light irradiation amount in the gray tone portion is not limited to 50% of the light irradiation amount necessary to sufficiently expose a photoresist having a predetermined thickness.
【００３２】[0032]
【発明の効果】以上説明したように本発明によれば、透
過率制御膜等からなるグレートーン部の膜厚の均一性が
高いグレートーンマスクを容易に得ることができる。ま
た、透過率低減膜をクロム等の遮光性が高く薄い膜で構
成できるので、エッチング時間の短縮が図れるととも
に、アスペクト比が低くその結果遮光部のパターン形状
やパターン精度が良好となる。特に、本発明は、ＬＣＤ
用大型グレートーンマスク等を実用化する上で必要不可
欠である。As described above, according to the present invention, it is possible to easily obtain a gray-tone mask having a high uniformity of the thickness of the gray-tone portion composed of the transmittance control film and the like. In addition, since the transmittance reducing film can be made of a thin film having a high light-shielding property such as chrome, the etching time can be reduced, and the aspect ratio is low, resulting in a good pattern shape and pattern accuracy of the light-shielding portion. In particular, the invention relates to an LCD
It is indispensable for putting large gray tone masks for practical use into practical use.
【図１】本発明の一実施の形態にかかる描画データを説
明するための図であり、図１（１）は全てのパターンデ
ータを組み込んだ場合の合成データ、図１（２）は遮光
部及び透光部の描画データ、図１（３）はグレートーン
部の描画データ、をそれぞれ示す。FIG. 1 is a diagram for explaining drawing data according to an embodiment of the present invention. FIG. 1 (1) is synthetic data in which all pattern data are incorporated, and FIG. 1 (2) is a light shielding unit. FIG. 1 (3) shows the drawing data of the light-transmitting portion, and FIG.
【図２】描画後の光照射量の分布を示す図である。FIG. 2 is a diagram showing a distribution of a light irradiation amount after writing.
【図３】本発明の一実施の形態にかかるグレートーンマ
スクの製造手順を示す部分断面図である。FIG. 3 is a partial cross-sectional view showing a procedure for manufacturing a gray-tone mask according to one embodiment of the present invention.
【図４】ＣｒＯ透過率制御膜の膜厚と透過率の関係を示
す図である。FIG. 4 is a diagram showing the relationship between the thickness of a CrO transmittance control film and transmittance.
【図５】グレートーンマスクを説明するための図であ
り、（１）は部分平面図、（２）は部分断面図である。5A and 5B are diagrams for explaining a gray-tone mask, wherein FIG. 5A is a partial plan view and FIG. 5B is a partial cross-sectional view.
【図６】従来の描画データを説明するための図であり、
図６（１）は遮光部及び透光部の描画データ、図６
（２）はグレートーン部の描画データ、図６（３）は全
てのパターンデータを組み込んだ場合の合成データ、を
それぞれ示す。FIG. 6 is a diagram for explaining conventional drawing data;
FIG. 6A shows drawing data of a light-shielding portion and a light-transmitting portion.
(2) shows the drawing data of the gray tone portion, and FIG. 6 (3) shows the combined data when all the pattern data are incorporated.
１ 遮光部 ２ 透光部 ３ グレートーン部 ３ａ 微細遮光パターン ３ｂ 微細透光部 １１ 透明基板 １２ 透過率制御膜 １３ 透過率低減膜 １４ レジスト膜 REFERENCE SIGNS LIST 1 light-shielding part 2 light-transmitting part 3 gray-tone part 3 a fine light-shielding pattern 3 b fine light-transmitting part 11 transparent substrate 12 transmittance control film 13 transmittance reduction film 14 resist film
Claims (7)
過するグレートーン部とを有するグレートーンマスクに
おいて、 前記遮光部を構成する膜が、透明基板側から主にグレー
トーン部における透過率を制御する透過率制御膜と遮光
部における透過率を低減する透過率低減膜とにより少な
くとも構成されており、前記透過率制御膜と前記透過率
低減膜とが同一の金属を含む膜からなり、前記グレート
ーン部が、前記遮光部を構成する膜がその厚さ方向に一
部除去されてなることを特徴とするグレートーンマス
ク。1. A gray-tone mask having a light-shielding portion, a light-transmitting portion, and a gray-tone portion that transmits a part of exposure light, wherein a film forming the light-shielding portion is mainly a gray-tone from a transparent substrate side. At least a transmittance control film for controlling the transmittance in the portion and a transmittance reduction film for reducing the transmittance in the light shielding portion, wherein the transmittance control film and the transmittance reduction film include the same metal. A gray-tone mask comprising a film, wherein the gray-tone portion is obtained by partially removing a film constituting the light-shielding portion in a thickness direction thereof.
のエッチングレートに比べて同等又は遅い材料であるこ
とを特徴とする請求項１記載のグレートーンマスク。2. The gray-tone mask according to claim 1, wherein the transmittance control film is made of a material equal to or slower than an etching rate of the transmittance reduction film.
り、前記透過率低減膜がクロムからなることを特徴とす
る請求項２記載のグレートーンマスク。3. The gray-tone mask according to claim 2, wherein said transmittance control film is made of a chromium compound, and said transmittance reduction film is made of chromium.
ることを特徴とする請求項１〜３のいずれかに記載のグ
レートーンマスク。4. The gray-tone mask according to claim 1, further comprising an anti-reflection film on the transmittance reducing film.
トーンマスクの製造方法において、 透明基板上に、少なくとも透過率制御膜、透過率低減膜
が順次形成されたマスクブランクを準備する工程と、 前記ブランク上にレジスト膜を形成する工程と、 透光部を形成する部分に対してレジストが完全に感光さ
れる露光量で、またグレートーン部を形成する部分に対
してレジストが完全に感光される露光量より少ない露光
量でレジスト膜を露光する工程と、 現像処理を行い、遮光部を形成する部分とグレートーン
部を形成する部分とでレジストの残膜値が異なるような
レジストパターンを形成する工程と、 前記レジストパターンをマスクとして透過率低減膜、透
過率制御膜をエッチングして透光部を形成する工程と、 前記グレートーン部上に残存するレジストパターンのみ
を除去する工程と、 前工程で残存したレジストパターンをマスクとして透過
率低減膜及び透過率制御膜の積層膜の少なくとも一部を
除去する工程と、 さらに残存したレジストパターンを剥離する工程と、を
含むことを特徴とするグレートーンマスクの製造方法。5. The method of manufacturing a gray-tone mask according to claim 1, wherein a mask blank is formed on a transparent substrate, on which at least a transmittance control film and a transmittance reduction film are sequentially formed. Forming a resist film on the blank; and exposing the resist to a portion where the light-transmitting portion is to be completely exposed, and completely exposing the resist to a portion where the gray-tone portion is to be formed. A resist pattern in which the resist film is exposed with an exposure amount smaller than the exposure amount to be exposed and a resist pattern in which a developing process is performed and a residual film value of the resist is different between a portion where a light shielding portion is formed and a portion where a gray tone portion is formed Forming a light-transmitting portion by etching the transmittance reducing film and the transmittance control film using the resist pattern as a mask; and forming a light-transmitting portion on the gray tone portion. Removing only the existing resist pattern; removing at least a part of the laminated film of the transmittance reducing film and the transmittance control film using the resist pattern remaining in the previous process as a mask; and further removing the remaining resist pattern. And a method for manufacturing a gray-tone mask.
トーンマスクを製造するためのグレートーンマスクブラ
ンクであって、 透明基板上に、透明基板側から主にグレートーン部にお
ける透過率を制御する透過率制御膜と遮光部における透
過率を低減する透過率低減膜とを少なくとも有し、前記
透過率制御膜と前記透過率低減膜とが同一の金属を含む
膜からなり、かつ、前記透過率制御膜と前記透過率低減
膜とで遮光膜を構成することを特徴とするグレートーン
マスクブランク。6. A gray-tone mask blank for producing the gray-tone mask according to any one of claims 1 to 4, wherein a transmittance in a gray-tone portion mainly from a transparent substrate side on a transparent substrate is reduced. At least a transmittance control film for controlling and a transmittance reducing film for reducing the transmittance in the light shielding unit, wherein the transmittance control film and the transmittance reducing film are made of a film containing the same metal, and A gray-tone mask blank, wherein a light-shielding film is formed by a transmittance control film and the transmittance reduction film.
はＰＤＰ用マスクであることを特徴とする請求項１〜４
のいずれかに記載のグレートーンマスク。7. The method according to claim 1, wherein the gray tone mask is an LCD mask or a PDP mask.
The gray-tone mask according to any one of the above.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000386050A JP2002189280A (en) | 2000-12-19 | 2000-12-19 | Gray tone mask and method for producing the same |
| TW090131212A TW517286B (en) | 2000-12-19 | 2001-12-17 | Gray tone mask and method for producing the same |
| KR10-2001-0081345A KR100484517B1 (en) | 2000-12-19 | 2001-12-19 | Grayton mask and manufacturing method thereof |
| US10/170,229 US7745842B2 (en) | 2000-12-19 | 2002-06-13 | Graytone mask and method thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000386050A JP2002189280A (en) | 2000-12-19 | 2000-12-19 | Gray tone mask and method for producing the same |
| US10/170,229 US7745842B2 (en) | 2000-12-19 | 2002-06-13 | Graytone mask and method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002189280A true JP2002189280A (en) | 2002-07-05 |
Family
ID=33421176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000386050A Pending JP2002189280A (en) | 2000-12-19 | 2000-12-19 | Gray tone mask and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002189280A (en) |
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