TWI363247B - - Google Patents
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- TWI363247B TWI363247B TW095134519A TW95134519A TWI363247B TW I363247 B TWI363247 B TW I363247B TW 095134519 A TW095134519 A TW 095134519A TW 95134519 A TW95134519 A TW 95134519A TW I363247 B TWI363247 B TW I363247B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
1363247 '九、發明說明： . 【發明所屬之技術領域】 本發明係關於半導體元件與影像顯示元件等之在圖案 •.形成時所使用的光學微影技術，取代使用複數光罩施行複 •數微影步驟，改為使用具灰階之1片光罩，藉由形成具有 配合穿透光量之梯度的光阻輪廓，而成為在減少微影步驟 數的製造技術中所用之具灰階的光罩及其製造方法。 【先前技術】 關於上述半導體元件或液晶顯示器裝置（LCD)所代表之 影像顯示元件等之減少微影步驟數的圖案形成方法，已有 揭示如利用迴流法而減少微影次數的方法、或利用灰化加 工法而減少微影次數的方法（例如參照專利文獻1、專利 文獻2)。 再者’在上述專利文獻中，曾針對為此所使用之具有曝 光光解析臨界以下之微小隙縫的光罩（以下稱「狹縫式遮 鲁罩」）、及對曝光光具有灰階的光罩（以下稱「灰階遮罩」） 進行說明。 然而，上述狹縫式遮罩及習知灰階遮罩（以下稱「習知 型灰階遮罩」）在遮罩製造上將出現較大困難點。 狹縫式遮罩係使用實質將曝光光遮光的絡膜等之一般 遮光膜’在遮罩上於欲形成半透明的區域配置著解析臨界 以下的微小隙縫（例如參照專利文獻3❶專利文獻3的遮 罩雖s己為「灰階遮罩」’但即所謂的「狹縫式遮罩」）。因 為該遮罩的隙縫為解析臨界以下的尺寸，因而本身在光阻 312XP/發明說明書(補件)/96-01/95134519 51363247 'Nine, the invention relates to: 1. The present invention relates to an optical lithography technique used in the formation of a pattern, such as a semiconductor element and an image display element, instead of using a complex reticle to perform a complex number In the lithography step, instead of using a reticle with a gray scale, by forming a photoresist profile having a gradient of the amount of transmitted light, it is a gray-scale light used in a manufacturing technique for reducing the number of lithography steps. Cover and its manufacturing method. [Prior Art] A method for forming a pattern for reducing the number of lithography steps of an image display device represented by the above-described semiconductor element or liquid crystal display device (LCD) has been disclosed, or a method for reducing the number of lithography by a reflow method has been disclosed. A method of reducing the number of lithography by the ashing processing method (for example, refer to Patent Document 1 and Patent Document 2). Further, in the above-mentioned patent documents, a photomask (hereinafter referred to as a "slit mask") having a minute slit having an exposure light analysis threshold or less and a gray scale light for exposure light used for this purpose have been used. The cover (hereinafter referred to as "gray scale cover") will be described. However, the slit mask and the conventional gray scale mask (hereinafter referred to as "conventional gray scale mask") have a large difficulty in the manufacture of the mask. In the slit type mask, a general light-shielding film such as a full-thickness film that shields light from exposure light is used, and a small slit having a resolution critical or less is disposed in a region where the mask is to be formed in a translucent region (see, for example, Patent Document 3) Although the mask is already a "gray scale mask", it is called a "slit mask". Since the slit of the mask is the size below the analytical critical value, it is itself in the photoresist 312XP/invention specification (supplement)/96-01/95134519 5
1363247 f並未成像，於涵蓋周圍非開口部區域在内的區域’將穿 =配合尺寸的曝光光。所以，狹縫式遮罩便屬於在形成 隙縫的區域、與含盆周^ s 〜、周圍的區域中，具有宛如半透明膜功 能的遮罩。 然而，因為該隙縫必須為解析臨界以下，因而當然必須 修整f較遮罩本體圖案更小的尺寸，對遮罩製造將造成較 大負何的問題。 再者’為能將廣區域形成半透明，將需要配置較多的隙 缝’因而圖案資料容量增加，亦發生對圖案形成步驟、圖 案缺陷檢查步驟的負荷增加之問題，導致製造/檢查時間 增加，並伴隨遮罩製造成本提升的問題。 另一方面，習知型灰階遮罩係除了將曝光光實質地予以 遮光的膜之外，尚使用對曝光光亦呈半透明的第二膜以造 成灰階的遮罩（例如參照專利文獻4)。為了製作該遮罩， 便使用在透明基板上預先依序積層了半透明臈與遮光膜 鲁的專用光罩毛胚，並重複2次遮罩圖案製版。此情況下， 在第1次的製版中，對遮光膜與半透明膜一起施行蝕刻， 而在第2次的製版中，則僅對遮光膜施行蝕刻，藉此可製 得所需遮罩。此外，亦可在第1次的製版中，僅對遮光膜 施行蝕刻，而在第2次的製版中則對遮光膜與半透明膜一 起施行蝕刻。該習知型灰階遮罩係具有不需要如狹縫式遮 罩般配置微小隙縫之優點。 然而如上述般，需要僅將遮光膜去除而殘留半透明膜的 飯刻技術，將出現無法獲得所需蝕刻選擇比的問題。因 312XP/發明說明書(補件)/96-01/95134519 6 .數裝置、藥液、氣體等：二備複數:到技術(複 成為遮罩製造成本提升筆因導致裏w備、步禅的增加， 所以’本案申請人為能解決 _4-1956〇2中㈣j 題，在日本專利特願 光膜透明基板上混雜著依序積層著遮 區站、禮y月膜而存在的遮光區域、僅存在遮光膜的遮光 二^ #在半透賴的半透明區域、及遮光膜與半透明 、：存在的穿透區域的具灰階之光罩，及其製造方法。 ^日本專利特願2_]95602中，遮光膜最好使用光罩通 之鉻系材料，半透明膜則最好使用絡的氧化膜、氮化 膜、碳化膜等。 [專利文獻1]曰本專利第34156〇2號公報 •[專利文獻2]日本專利特開2002-66240號公報 [專利文獻3]曰本專利特開2〇〇2_196474號公報 [專利文獻4]日本專利特開2002-189280號公報 另一方面，在使用光罩的光學微影步驟中，當施行曝光 之際，為防止曝光光在遮光膜表面反射而產生雜散光，導 致發生轉印精度降低的問題，因而通用的光罩毛胚常使用 在遮光臈表面積層形成低反射膜的雙層結構毛胚。通常， 遮光膜係使用厚度50~150nm左右的鉻膜或氮化鉻膜等， 而低反射膜係使用厚度2〇nm左右的氧化鉻膜等。 312XP/發明說明書(補件)/96-01/95134519 7 1363247 然而，本案申請人在日本專利特願2004-1 95602中所提 階光罩卜發現當使用在遮光膜上設置低反射膜的 又、曰、·、。構遮罩毛胚，而進行灰階光罩製造之際，將發生如 .下述問題的情況。 光膜上所設置之低反射膜雖利用膜質與膜厚而將 =率最佳化，但是若在具有遮光膜與低反射膜的表面上 形成半透明膜’則反射率將改變，導致出現低反 射膜效果減少、反射率提高等狀況的問題。 再者’當形成半透明案之時，於對準描繪步驟中， =利用描緣裝置讀取預先在遮光膜圖案中所形成的 土，^己’再配合該位置施行半透明臈㈣料的方法， 二St膜表面上形成低反射膜時，將出現較難利用 田、.曰裝置絲遮光膜上所形成之基準標記的問題。 ，者’所使用之光罩毛胚係如圖8(a)所示 板601上形成作為遮光膜602的氮化鉻、及 1=二3的氧化鉻的雙層膜組合所構成之通用光罩 =(斤，若使用濕式㈣施行圖㈣刻，將如 圖案604的邊緣部605將因側钱刻 軟如圖8(c)所示，覆蓋低反射膜圖案 部將面上形成半透明膜607之時，在反推拔狀 π將不會有+透賴6〇7成_著，而有無 =(即階梯覆蓋佳）之半透明膜6G7的情況 發生肇因的問題。 守双珉马缺 【發明内容】 312XP/發明說明書(補件)/96-〇i/95134519 5 1363247 树明係㈣於上述日本專利特願⑽4_1 956G2所示 題而成即，提供一種在用於減少光學微影步驟數的 具灰P自之光罩t，於不需要使用專用光罩毛胚材料的情況 ..下使用通用光罩毛胚，便可防止遮光膜反射率的提高， •且在半透明膜圖案形成時的對準用基準標記的讀取容 易’半透明膜在遮光膜圖帛上可階梯覆蓋性佳地形成之且 灰階之光罩及其製造方法。 /、 為了解決上述問題，中請專利範圍第Μ發明的具灰階 響之光罩，係在透明基板上具有所需圖案，而形成上述圖案 的膜係由實質使曝光光未穿透的遮光膜、以及使上述曝光 光依所需穿透率穿透過的半透明膜所構成；在上述透明基 板上，混雜著：依序積層存在著上述遮光膜與上述半透明 膜的遮光區域、僅存在上述半透明膜的半透明區域、及上 述遮光膜與上述半透明膜均未存在的遮光區域；其中，上 述半透明膜係對上述曝光光具有抗反射功能。、 • 申請專利範圍第2項發明的具灰階之光罩，係在申社直 利範圍第！項之具灰階之先罩中，僅存在上述半2 = 半透明區域之對上述曝光光的穿透率，係在15%〜85%範 内。 申請專利範圍第3項發明的具灰階之光罩，係在申請專 利範圍第1或2項之具灰階之光罩中，依序積層存在^上 述遮光膜與上述半透明膜的遮光區域之對上述曝光光的 反射率’係未滿30% » ^ 申請專利範園第4項發明的具灰階之光罩，係在申請專 312ΧΡ/發明說明書(補件)/9641/95134519 9 丄 利範圍第1至3項中杠—s ^ 明膜係斜目女 任一項之具灰階之光罩中，上述半透1363247 f is not imaged and will be worn with a size of exposure light in the area covering the surrounding non-opening area. Therefore, the slit type mask is a mask having a function as a semi-transparent film in a region where the slit is formed, and in a region including the circumference of the basin. However, since the slit must be below the resolution critical, it is of course necessary to trim the smaller size than the mask body pattern, which would cause a greater problem for mask fabrication. Furthermore, in order to form a translucent region, it is necessary to configure a plurality of slits, and thus the pattern data capacity is increased, and the load on the pattern forming step and the pattern defect inspection step is increased, resulting in an increase in manufacturing/inspection time. And with the problem of the manufacturing cost of the mask. On the other hand, the conventional gray scale mask is a film which is semitransparent to the exposure light in addition to the film which substantially obscures the exposure light to cause a gray scale mask (for example, refer to the patent document) 4). In order to fabricate the mask, a special mask blank in which a translucent crucible and a light-shielding film are laminated in advance on a transparent substrate is used, and the mask pattern is repeated twice. In this case, in the first plate making process, the light shielding film and the semitransparent film are etched together, and in the second plate making process, only the light shielding film is etched, whereby a desired mask can be obtained. Further, in the first plate making process, only the light shielding film may be etched, and in the second plate making process, the light shielding film and the semitransparent film may be etched together. This conventional gray scale mask has the advantage of not requiring a small slit as a slit mask. However, as described above, there is a need for a rice-etching technique in which only the light-shielding film is removed to leave a semi-transparent film, and there arises a problem that a desired etching selectivity ratio cannot be obtained. Because 312XP / invention manual (supplement) /96-01/95134519 6 . Number of devices, liquid medicine, gas, etc.: two preparations: to the technology (reconstruction of the mask manufacturing cost increase pen cause, step by step Increasing, so the applicant of this case can solve the problem of _4-1956〇2 (4) j, and the light-shielding area existing in the transparent substrate of the Japanese patent-specific light film is covered with the masking station and the mask. There is a light-shielding film of the light-shielding film, a translucent film in a semi-transparent region, and a light-shielding film having a light-shielding film and a translucent film: a transparent region, and a manufacturing method thereof. ^Japanese Patent Patent No. 2_] In the case of 95602, it is preferable to use a chrome-based material through which a photomask is passed, and a semi-transparent film is preferably an oxide film, a nitride film, a carbonization film, or the like. [Patent Document 1] Japanese Patent No. 34156〇2 [Patent Document 2] Japanese Laid-Open Patent Publication No. 2002-66240 (Patent Document 3), JP-A-2002-189280 In the optical lithography step using a reticle, to prevent exposure light when exposure is applied The surface of the light-shielding film is reflected to generate stray light, which causes a problem of a decrease in transfer precision. Therefore, a general-purpose mask blank is often used to form a double-layered structure blank of a low-reflection film on a light-shielding surface layer. Usually, a light-shielding film is used. A chromium film or a chromium nitride film having a thickness of about 50 to 150 nm, and a low-reflection film using a chromium oxide film having a thickness of about 2 nm. 312XP/Invention Manual (Supplement)/96-01/95134519 7 1363247 However, The reticle of the order mentioned in Japanese Patent Application No. 2004-1 95602 has found that when a low-reflection film is provided on the light-shielding film, a gray-scale mask is used. At the time of manufacture, the following problems may occur. The low-reflection film provided on the photo film optimizes the yield ratio by the film quality and film thickness, but on the surface having the light-shielding film and the low-reflection film. When the semi-transparent film is formed, the reflectance will change, resulting in a problem of a decrease in the effect of the low-reflection film, an increase in the reflectance, etc. Further, when forming a translucent case, in the alignment drawing step, using the edge-finishing device Read in advance on the light shielding film The soil formed in the pattern, the method of applying the semi-transparent enamel (four) material to the position, and the formation of the low-reflection film on the surface of the second St film, it is difficult to use the light-shielding film formed on the wire of the field. The problem of the reference mark is that the reticle blank used in the stencil shown in Fig. 8(a) is formed as a double-layer film of chromium nitride as the light-shielding film 602 and chrome oxide of 1 = two-three. The universal reticle formed by the combination = (jin, if the wet (four) execution map (four) is used, the edge portion 605 such as the pattern 604 will be softened by the side money as shown in Fig. 8(c), covering the low reflection film pattern portion. When the semi-transparent film 607 is formed on the surface, the reverse-pushing π will not have a diarrhea of 〇6, and the presence or absence of the semi-transparent film 6G7 (ie, the step coverage is good) may cause a cause. The problem.守双珉马缺 [Content of the invention] 312XP/Invention Manual (supplement)/96-〇i/95134519 5 1363247 The Shuming Department (4) is based on the above-mentioned Japanese Patent Application (10) 4_1 956G2, providing one for use in The reticle of the ash ash from the number of optical lithography steps is not required to use the special reticle blank material. The general reticle blank is used to prevent the reflectance of the opaque film from being improved. The reading of the alignment reference mark at the time of formation of the semi-transparent film pattern is easy. The semi-transparent film is formed on the light-shielding film pattern with good step coverage, and the gray-scale reticle and the method of manufacturing the same. In order to solve the above problems, the refractory refractory reticle of the invention of the invention has a desired pattern on a transparent substrate, and the film forming the above-mentioned pattern is substantially blocked by the exposure light. a film and a semi-transparent film that penetrates the exposure light according to a desired transmittance; and the transparent substrate is mixed with a light-shielding region of the light-shielding film and the semi-transparent film present in a layer, and only exists a translucent region of the translucent film and a light-shielding region in which the light-shielding film and the semi-transparent film are not present; wherein the semi-transparent film has an anti-reflection function to the exposure light. • The gray-scale reticle of the second invention of the patent application area is the first in the scope of the company! In the gray scale first cover, only the transmittance of the above-mentioned half 2 = translucent region to the above exposure light is in the range of 15% to 85%. The gray-scale reticle of the third invention of the patent application is in the refractory mask of the first or second application of the patent scope, and the light-shielding area of the light-shielding film and the semi-transparent film are sequentially laminated. The reflectance of the above-mentioned exposure light is less than 30% » ^ The gray-scale reticle of the invention of the patent application No. 4 is applied for 312 ΧΡ / invention manual (supplement) /9641/95134519 9 丄In the range 1 to 3 of the range of interest, the above-mentioned semi-transparent
ArF二分子雷射中至少1種的波長，具有抗反射J π專利la圍第5項發明的具灰階之鮮，係在申請專 膜=圍第1至4項中任一項之具灰階之光罩中，上述遮光 膜與上述半透明膜均係以鉻為主成分。 申明專利fe圍第6項發明的具灰階之光罩，係在申請 利fe圍第5項之具灰階之光罩中，上述遮光膜係由絡或氮 化鉻所構成，上述半透明膜係由氧化鉻或氮氧化絡所構 成。 申明專利範圍第7項發明的具灰階之光罩之製造方 法’係在透明基板上具有所需圖案，且形成上述圖案的膜 係由實質未使曝光光穿透過的遮光膜、及使上述曝光光依 卢 =穿透率穿透過的半透明膜所構成之具灰階之光罩的 製造方法；其中’依序包括有··準備在上述透明基板上形 籲成上述遮光膜的遮罩毛胚之步驟；對上述遮光膜施行圖案 化的步驟，·在上述設有經圖案化之遮光膜的上述透明基板 上，整面形成對上述曝光光具有抗反射功能之半透明膜的 步驟；以及對上述具有抗反射功能半透明膜施行圖案化的 步驟。 申請專利範圍第8項發明的具灰階之光罩之製造方 法，係在透明基板上具有所需圖案，且形成上述圖案的膜 係由實質未使曝光光穿透過的遮光膜、及使上述曝光光依 所需穿透率穿透過的半透明膜所構成之具灰階之光罩的 \At least one of the wavelengths of the ArF two-molecule laser has an anti-reflection J π patent, and the gray-scale freshness of the fifth invention is applied to the glaze of any one of the first to fourth items. In the mask of the step, the light-shielding film and the semi-transparent film are mainly composed of chromium. The refractory mask with the gray scale of the invention of claim 6 is applied to the refractory mask of the fifth item of the Philippine Circumference, and the light-shielding film is composed of a complex or chromium nitride. The membrane system consists of chromium oxide or nitrogen oxides. The manufacturing method of the gray-scale reticle of the invention of claim 7 is a pattern having a desired pattern on a transparent substrate, and the film forming the pattern is a light-shielding film that does not substantially penetrate the exposure light, and a method of manufacturing a reticle with a gray scale formed by a translucent film having a transmittance of penetration; wherein 'in order includes a mask to be formed on the transparent substrate to form the light-shielding film a step of patterning the light-shielding film; and a step of forming a semi-transparent film having an anti-reflection function for the exposure light on the transparent substrate on which the patterned light-shielding film is provided; And a step of patterning the above-mentioned translucent film having an antireflection function. The method for manufacturing a gray-scale reticle according to the eighth invention of the present invention is to have a desired pattern on a transparent substrate, and the film forming the pattern is a light-shielding film that does not substantially penetrate the exposure light, and A grading mask made of a translucent film that has been penetrated by a desired transmittance.
312XP/發明說明書(補件)/96-01/95134519 1〇 ( S 1363247 製造方法’·其令，依序包括有:準備在上述透明基板上具 有遮光膜與低反射膜之雙層膜之遮罩毛胚的步驟；將上述 低反射臈利用蝕刻去除而裸露出上述遮光膜的步驟；對上 ..述遮光膜施行圖案化的步驟；在上述設有經圖案化遮光膜 •的上述透明基板上，整面形成具有抗反射功能之半透明膜 的步驟，以及對上述具有抗反射功能半透明膜施行圖案化 的步驟。 ~ 申請專利範圍第9項發明的具灰階之光罩之製造方 法，係申請專利範圍第7或8項之具灰階之光罩之製造方 法中更包括有：在對上述具有抗反射功能之半透明膜施 行圖案化的步驟之後，再度對所裸露出的上述遮光膜施行 圖案化的步驟。 申請專利範圍第1 〇項發明之具灰階之光罩之製造方 法，係申請專利範圍第7至9項中任一項之具灰階之光罩 之製造方法中’在對上述遮光膜施行圖案化的步驟後，施 籲行上述遮光膜的遮罩圖案檢查步驟、及視需要施行修正步 驟。 本發明之具灰階之光罩，因為半透明膜本身具有抗反射 功能’因而在遮光膜上無需設置低反射膜，可使遮罩構造 單純化。此外’因為在遮光膜圖案邊緣部亦階梯覆蓋性佳 地形成半透明膜，因而遮罩圖案邊緣部平順，可依低成本 -獲得高品質之具灰階之光罩。 藉由使用本發明之具灰階之光罩，可有效率地減少半導 體元件與影像顯示元件的光學微影步驟數，可實現低成本 312XP/發明說明書(補件)/96·〇1/95134519 11 1363247 的半導體元件與影像顯示元件。 本發明具灰階之光罩之製造方法，因為可在未準備專用 光罩毛胚的情兄下，使用習知鉻系材料的光罩毛胚，因而 •可使用現有的遮罩製造步驟、製造設備進行製造。此外， •在遮罩製造步驟中的對準描繪步驟，可確實地對位於半透 明膜下的遮光膜圖案之基準標記進行辨視，因而可輕易地 進行對準，而提升精度，可依低成本獲得高品質之具灰階 之光罩。 •【實施方式】 以下，參照圖式，針對本發明具灰階之光罩及其製造方 法的實施形態進行說明。 圖1所示係本發明具灰階之光罩一實施形態的剖面示 意圖。 圖2及後續的目3係® 1所示本發明具灰階之光罩之製 造步驟的剖面*意圖。圖4及後續的圖5係本發明具灰階 籲之光罩之製造步驟之另一實施形態的剖面示意圖。 (具灰階之光罩） 如圖1所示，本發明具灰階之光罩1〇〇的構造，係在透 明基板101上具有所需圖s，且形成圖案的膜係由：實質 未使曝光光穿透過的遮光膜圖案114、與使曝光光依所需 穿透率穿透過的半透明膜圖案113所構成；在透明基板 101上混雜著：依序積層遮光膜圖案114與半透明膜圖案 113而存在的遮光區域、僅存在半透明膜圖案113的半透 明區域、及遮光膜圖案114與上述半透明膜圖案113均未 312XP/發明說明書(補件)/96·01/95134519 12 1363247 存在的透明區域。 本發明中’所謂「實質未使曝光光穿透過的遮光膜圖案」 係指在曝光波長中，利用單次曝光使曝光光穿透但未使感 光性光阻劑感光的遮光膜圖案，通常在曝光波長中，穿透 率最好在〇. 1%以下。 圖1所不係遮光膜圖案114與半透明膜圖案113依序積 層存在的遮光區域中，經圖案蝕刻的半透明膜侧處，將形 成遮光膜圖案114邊緣部、與半透明膜圖案113邊緣部的 攀位置相同之構造。 本發明的具灰階之光罩1〇〇中，透明基板1〇1通常係可 使用諸如使用於光罩之經光學研磨過的鈉鈣玻璃 、蝴矽酸 鹽玻璃、鋁硼矽酸鹽玻璃等低膨脹玻璃、合成石英玻璃、 螢石、氟化鈣等，當曝光光為短波長時，最好為合成石英 玻璃。 本發明中，形成遮光膜圖案114的遮光膜係有如··鉻系 φ膜、石夕化m石夕、氧化石夕、氮氧化石夕等，若為可 使用作為-般遮罩材料的薄膜，則可使用任一者，就遮罩 毛胚成本、品質而言，最好使用具實際使用績效之以絡為 主成分的鉻系膜。鉻系膜通常係使用選擇自絡、氧化絡、 氮化，、氮氧化鉻中之材料的單層膜，該等鉻系材料之 2 ’取好為成膜容易且通用性高的鉻膜、或膜應力較容易 低的氮化鉻膜。例如’當以鉻為遮光膜的情況，係使用 50nm〜150nm左右範圍的膜厚。 本發明中’形成半透明膜圖案113的半透明膜係使用形 312XP/發明說明書(補件)/96-01/95134519 n , -l JUJZ4 / 2述遮光膜圖案114的遮光狀氧化膜、氮化膜、碳化 、一，，，、了維持使半透明膜與遮光膜能利用同一蝕刻$ 同類=化的優點，最好半透明膜係由與遮“312XP/Invention Manual (Supplement)/96-01/95134519 1〇(S 1363247 Manufacturing Method'· The order includes, in order to cover, a double-layer film having a light-shielding film and a low-reflection film on the above transparent substrate a step of covering the blanks; a step of removing the light-reflecting film by etching the low-reflecting germanium; and performing a patterning process on the light-shielding film; and the transparent substrate provided with the patterned light-shielding film a step of forming a semi-transparent film having an anti-reflection function on the entire surface, and a step of patterning the semi-transparent film having an anti-reflection function. The method for manufacturing a gray-scale reticle according to the ninth invention of the patent application The manufacturing method of the gray-scale reticle of claim 7 or 8 further includes: after the step of patterning the semi-transparent film having the anti-reflection function, the bare above The method of performing the patterning of the light-shielding film. The method for manufacturing the gray-scale reticle of the invention of claim 1 is the manufacturer of the gray-scale reticle of any one of the claims 7 to 9. After the step of patterning the light-shielding film, the mask pattern inspection step of the light-shielding film is applied, and the correction step is performed as needed. The gray-scale mask of the present invention has a semi-transparent film itself. Anti-reflection function' Therefore, it is not necessary to provide a low-reflection film on the light-shielding film, so that the mask structure can be simplistic. Further, since the semi-transparent film is formed in the edge portion of the light-shielding film pattern, the edge portion of the mask pattern is smooth. According to the low cost, a high-quality gray-scale reticle can be obtained. By using the gray-scale reticle of the invention, the number of optical lithography steps of the semiconductor component and the image display component can be effectively reduced, and the achievable Low-cost 312XP/invention specification (supplement)/96·〇1/95134519 11 1363247 semiconductor element and image display element. The method for manufacturing a gray-scale reticle of the present invention, because a special reticle blank can be prepared Under the erotic brother, the reticle blank of the conventional chrome-based material is used, and thus can be manufactured using existing mask manufacturing steps and manufacturing equipment. In addition, • in the mask manufacturing step By aligning the drawing step, the reference mark of the light-shielding film pattern under the semi-transparent film can be surely recognized, so that alignment can be easily performed, and the precision can be improved, and high-quality gray-scale light can be obtained at low cost. [Embodiment] Hereinafter, an embodiment of a gray scale mask and a method of manufacturing the same according to the present invention will be described with reference to the drawings. Fig. 1 is a cross section showing an embodiment of a gray scale mask of the present invention. Fig. 2 and subsequent Fig. 3 are the cross-sections of the manufacturing steps of the reticle of the present invention shown in Fig. 1. Fig. 4 and subsequent Fig. 5 are manufacturing steps of the reticle with the gray scale of the present invention. A schematic cross-sectional view of another embodiment. (Gray-scale reticle) As shown in FIG. 1, the structure of the gray-scale reticle of the present invention has a desired pattern on the transparent substrate 101, and The patterned film is composed of: a light-shielding film pattern 114 that does not substantially penetrate the exposure light, and a semi-transparent film pattern 113 that penetrates the exposure light according to a desired transmittance; and is mixed on the transparent substrate 101: Sequential light shielding film pattern 114 and translucent film The light-shielding region in which the pattern 113 exists, the translucent region in which only the semi-transparent film pattern 113 exists, and the light-shielding film pattern 114 and the above-described semi-transparent film pattern 113 are not 312XP/invention specification (supplement)/96·01/95134519 12 1363247 A transparent area that exists. In the present invention, the term "the light-shielding film pattern which does not substantially penetrate the exposure light" means a light-shielding film pattern which penetrates the exposure light by a single exposure but does not expose the photosensitive photoresist at the exposure wavelength, usually In the exposure wavelength, the transmittance is preferably 〇. 1% or less. In FIG. 1, in the light-shielding region where the light-shielding film pattern 114 and the semi-transparent film pattern 113 are sequentially laminated, the edge portion of the light-shielding film pattern 114 and the edge of the semi-transparent film pattern 113 are formed at the side of the pattern-etched semi-transparent film. The climbing position of the department is the same. In the gray-scale photomask of the present invention, the transparent substrate 101 is usually used, such as optically ground soda lime glass, bismuth silicate glass, and aluminum borosilicate glass, which are used for a photomask. Such as low-expansion glass, synthetic quartz glass, fluorite, calcium fluoride, etc., when the exposure light is a short wavelength, it is preferably synthetic quartz glass. In the present invention, the light-shielding film forming the light-shielding film pattern 114 is made of, for example, a chromium-based film, a shi shi hua, a oxidized stone, a nitrous oxide, or the like, and a film which can be used as a general mask material. In any case, it is preferable to use a chromium-based film having a main component of the use performance in terms of cost and quality of the mask. The chrome-based film is usually a single-layer film selected from the group consisting of self-complexation, oxidization, nitridation, and chromium oxynitride. The chrome-based material 2' is preferably a chrome film which is easy to form and has high versatility. Or a chromium nitride film with a relatively low film stress. For example, when chromium is used as a light-shielding film, a film thickness in the range of about 50 nm to 150 nm is used. In the present invention, the semi-transparent film forming the semi-transparent film pattern 113 is formed by using a shape 312XP/invention specification (supplement)/96-01/95134519 n , -l JUJZ4 / 2, a light-shielding oxide film of the light-shielding film pattern 114, and nitrogen. The film, carbonization, and the maintenance of the semi-transparent film and the light-shielding film can be utilized by the same etching.
4時’半透明膜便使用在料含有氧、氮、碳等之 j率較尚的膜，只要依積層於遮光膜上時能降低反射率 中方式將膜組成與膜厚最佳化的話便可。鉻系半透明臈 ’最好為穿透率與抗反射功能雙方的特性控制較容易之 氧化鉻膜、錢氧化鉻膜。例如，t將氧化鉻膜使用為半 透明膜，情況’係使用5nm〜150nm左右範圍内的膜厚。其 由係若膜厚小於5nm、或超過150 nm，半透明膜對遮光 膜將不易出現穿透率差別的緣故。當含氧、氮、碳等的半 透明膜時，吸光度將隨組成而變化，因而藉由同時控制臈 厚與組成，便可實現所需穿透率與抗反射功能。 、At 4 o's, the semi-transparent film uses a film having a higher ratio of oxygen, nitrogen, carbon, etc., as long as the film composition and film thickness are optimized in such a manner that the reflectance is reduced when the film is laminated on the light-shielding film. can. The chrome-transparent 臈 ’ is preferably a chrome oxide film or a chrome oxide film which is easy to control both the transmittance and the anti-reflection function. For example, t uses a chromium oxide film as a semi-transparent film, and the case uses a film thickness in the range of about 5 nm to 150 nm. If the film thickness is less than 5 nm or exceeds 150 nm, the translucent film will not easily exhibit a difference in transmittance for the light-shielding film. When a semi-transparent film containing oxygen, nitrogen, carbon, or the like is used, the absorbance will vary with composition, and thus the desired transmittance and anti-reflection function can be achieved by simultaneously controlling the thickness and composition. ,
本發明中，形成半透明膜圖案113的半透明膜對曝光光 的穿透率，最好依15%〜85%範圍内形成。理由係僅存在半 透明膜的半透㈣域中，若穿透率小於15%，於使用本發 明之具灰階之光罩的光阻圖案形成時，在與遮光區域間將 不易出現差別，反之，若穿透率超過85%，在光阻圖案形 成時將不易與穿透區域間出現差別。 本發明中，具灰階之光罩的半透明膜抗反射功能，係對 超高壓水銀燈等所發生的光，諸如g射線（436nm)、h射In the present invention, the transmittance of the translucent film forming the semi-transparent film pattern 113 to the exposure light is preferably in the range of 15% to 85%. The reason is that only in the semi-transmissive (four) domain of the semi-transparent film, if the transmittance is less than 15%, when the photoresist pattern of the gray-scale photomask of the present invention is used, a difference between the light-shielding region and the light-shielding region will be less likely to occur. On the other hand, if the transmittance exceeds 85%, it will not easily differ from the penetration region when the photoresist pattern is formed. In the present invention, the anti-reflection function of the translucent film of the gray-scale reticle is a light generated by an ultra-high pressure mercury lamp or the like, such as g-ray (436 nm), h-ray.
線（405nm)、1 射線（365mn)、KrF 準分子雷射（248mn)、ArF 準分子雷射（193nm)中至少任一波長具有抗反射功能，最 312XP/發明說明書(補件)/9W)l/95134519 14At least one of the line (405 nm), 1 ray (365mn), KrF excimer laser (248mn), and ArF excimer laser (193nm) has anti-reflection function, most 312XP/invention specification (supplement)/9W) l/95134519 14
1363247 好對如g射線、1射線等2種以上波長具有抗反射功能。 通常當利用鉻等金屬膜形成遮光臈圖案時，於遮光膜對 曝光光不具抗反射功能的情況下，反射率將達3〇%以上， .•而發生雜散光的影響。 •本發明中，在遮光膜圖案114積層著半透明膜圖案113 而存在的遮光區域，對曝光光的反射率最好小於。其 理由係若反射率超過30%，於使用光罩所施行的微影中， 將發生雜散光影響而導致光阻劑圖案的解像性降低，而若 反射率小於30%，抗反射功能在實用上將無障礙。 (具灰階之光罩之製造方法） 其次，針對本發明具灰階之光罩之製造方法的實施形態 進行說明。 (第1實施形態） 圖2所示係圖1所示之本發明具灰階之光罩丨〇〇之製造 步驟的剖面示意圖，圖3所示係接著圖2之本發明具灰階 _之光罩100之製造步驟的剖面示意圖。 本實施形態在進行具灰階之光罩的製作時，首先，準備 將第一膜的遮光膜102形成於透明基板1〇1上的光罩毛胚 1〇3(圖2(a))。若光罩毛胚的遮光膜1〇2係鉻膜或氮 化鉻膜’則鉻膜或氮化鉻膜可依濺鍍法形成，通常使用作 為光罩毛胚，可輕易取得。 其次’對上述光罩毛胚1 〇3依照常法施行第1次遮罩圖 案製版’而對第一膜的遮光膜1〇2施行圖案化。換言之， 在遮光膜102上塗佈著因應雷射曝光裝置等曝光裝置的 312XP/發明說明書(補件)/9W)1/95134519 15 1363247 感光性光阻劑等光阻劑，經塗佈後施行既定時間烘烤，而 形成均勻厚度的遮光膜用光阻膜1〇4(圖2(b))。 另外’遮罩用曝光震置係如EB曝光裝置、雷射曝光製 .置，均可使用於本發明，但是隨如LCD或pDp等顯示器裝 .置的大型化、製造時多樣化等因素，光罩亦趨於大型化， 於影像顯示元件用光罩主要係使用雷射曝光裝置。 其次’利用雷射光等能量射線1〇5在遮光膜上的光阻膜 104上施行圖案描繪（圖2(c))。本實施形態中，該圖案描 •繪係依僅形成遮光膜區域與由後續步驟所形成之半透明 膜區域所直接接觸之邊界的方式進行描繪，並將遮光膜 102其中一部分施行圖案化。用於對遮光膜與半透明膜之 相同地方一次地進行蝕刻的圖案描繪，係在第2次遮罩圖 案製版時實施。 々該描繪時，在遮罩的非轉印區域中，複數個描繪配置在 第2層半透明膜施行圖案化時進行對位所使用的描繪用 鲁對準標記（未圖示）。 曰 接著，配合所使用光阻劑的特性，視需要施行曝光後烘 烤步驟，對光阻劑使用既定顯影液施行顯影，經潤洗，形 成遮光膜用光阻圖案106 (圖2(d))。 其次，對從遮光膜用光阻圖案1〇6中露出的遮光膜1〇2 施行蝕刻，而形成遮光膜圖案1〇7(圖2(e))，再將殘留的 光阻劑剝離去除，便獲得具遮光膜圖案之基板1〇8(圖 2(f))。遮光膜圖案ι〇7僅形成有遮光膜區域與半透明膜 區域所直接接觸的邊界，在此階段中，對與半透明膜相同 312XPi/發明說明書(補件)/96-01/95134519 16 1363247 地方施行蝕刻的遮光膜部分並未被蝕刻而仍殘留著。 - 遮光膜ι〇2的蝕刻係可採用濕式蝕刻或乾式蝕刻方 .法’如_]1|，當屬於影像顯示元件用光罩的情況下，隨遮 ..罩的大型化，乾式蝕刻將導致裝置、材料成本過高，而且 大面積的乾式蝕刻將造成蝕刻均勻性惡化，因而最好採取 濕式蝕刻。當遮光膜1〇2為鉻系膜的情況，最好使用硝酸 飾系濕式姓刻劑。 本實施形態令，於第一臈之圖案化步驟之後，施行具遮 光膜圖案之基板108的檢查，視需要亦可施行缺陷修正的 步驟。當遮光膜係使用鉻系臈的情況，最好採取習知鉻系 膜的光罩檢查技術、修正技術。藉由施行遮光膜圖案尺寸 檢查、圖案缺陷檢查的檢查步驟、及視需要的修正步驟， 可防止對下一步驟輸送具有缺陷的基板，可提高良率，對 遮罩成本降低亦具作用。 其次，在具遮光膜圖案之基板108整面上，形成半透明 馨膜 109(圖 2(g))。 其中，半透明膜109最好由與上述遮光膜1〇2同類的材 料所構成。若遮光臈1 〇2係如前述由鉻系材料構成，則半 透明臈109係使用在鉻中含有如氧、氣、碳等中之j種或 2種以上，且穿透率較高的膜，並依積層於遮光膜上之時， 月b降低反射率的方式將膜組成與膜厚最佳化即可。 虽含有氧、氮、碳等的半透明膜時，其吸光度將隨組成 而變化，因而藉由同時控制膜厚與組成便可實現所需的穿 透率與抗反射特性。例如，當將氧化鉻膜作為半透明膜 312XP/發明說明書(補件)勝〇1/95134519 1363247 109時’係使用5nm〜15()nm左右範圍内的膜厚。 半：=1〇9之成膜與鉻遮光膜的形成方法相同，使用 濺鍍法等真空成膜方法。 』使用 其次⑽利用帛2次遮罩圖案製版步驟，對第 明膜109施行圖案化，报# π a a 联的牛透 *…膜圖宏：下層遮光膜圖案107對位的 半透明膜圖案。換言之，在丰 蔽朵梦窨蓉8¾本驻® 透月膜109上塗佈對應雷射 曝先裝置等曝先裝置的感光性光阻劑等光阻劑，經塗佈後 並施行既定時間烘绪，形士、上* 〇 、主工师俊 3⑻）。 肖形成+透明膜用光阻膜110(圖 接著，利用雷射光等能量射線⑴施行 圖案描繪。在該描繪時，檢制筮^ @ Λ , 犋i(J9的 施杆斜層遮絲的對準標記並 施订對位（圖3⑴）。本發明中，在遮細圖帛 設置的對準標記，係可隔著光阻膜no輕易地檢測出，而斤 提升描繪位置精度。 而 其次，配合所使用之光阻劑的特性，視需要施行曝光後 烘烤步驟，然後對光阻劑使用既定顯影液施行顯影，經潤 洗，形成半透明膜用光阻圖案112(圓3(j))。 其次，對半透明膜用光阻圖案112所露出的半透明膜 109施行敍刻，接著對所裸露出的遮光膜圖案1〇7施行蝕 刻’而形成半透明膜圖案113與遮光膜圖案114(圖3(k))。 其卜在施行半透明膜钱刻後，露出下層遮光臈的部位 係再度對遮光膜施行飯刻而圖案化。藉此，再度施行姑刻 的遮光膜部絲不同於最初_刻㈣位。此外，者使用 由與遮光膜同系材料所構成的半透明膜之情況下^連續 312XP/發明說明書(補件)/96·01/95134519 18 ( t 1363247 .成遮光：發的圖案㈣而形 遮光膜圖案。 ’、&订早次圖案蝕刻以形成 * 制Γι’裳將殘留的半透明膜用光阻圖案112利用光阻專用 行剝離去除，獲得具灰階之光罩厲圖 3⑴）。然後，施行遮罩檢查、視需要施行修正。 糾m’在遮光膜上於半透明臈所積層並經圖案# 部’遮光膜與半透明膜的剖面邊緣部位置 =背地形成，而遮光膜圖案114另一邊緣部則階梯覆蓋 性佳地形成半透明膜。 (第2實施形態） 八人針對第2员把形態進行說明。第2實施形態係使 用在遮光膜上預先設置低反射層之通用光罩毛胚時的製 造方法。 圖4及後續的圖5係本發明具灰階之光罩之另一製造步 驟的剖面示意圖。 / 本實施形態t，在進行具灰階之光罩的製作時，係準備 在透明基板201上設置遮光臈202，並在其上面形成低反 射膜203的雙層結構光罩毛胚220(圖4(a))。可使用例如 光罩毛胚220的遮光膜202為氮化鉻膜，而低反射膜203 為氧化鉻膜般之一般所使用的光罩毛胚。 但是’因為上述光罩毛胚220的低反射膜203並不具備1363247 It has an anti-reflection function for two or more wavelengths such as g-ray and 1-ray. Generally, when a light-shielding pattern is formed by a metal film such as chrome, when the light-shielding film does not have an anti-reflection function for the exposure light, the reflectance will be 3% or more, and the influence of stray light will occur. In the present invention, in the light-shielding region where the light-shielding film pattern 114 is laminated with the semi-transparent film pattern 113, the reflectance to the exposure light is preferably smaller. The reason is that if the reflectance exceeds 30%, in the lithography performed by the reticle, stray light will be affected to cause a decrease in the resolution of the photoresist pattern, and if the reflectance is less than 30%, the anti-reflection function is Practically accessible. (Manufacturing method of photomask having gray scale) Next, an embodiment of a method of manufacturing a photomask having a gray scale according to the present invention will be described. (First Embodiment) Fig. 2 is a cross-sectional view showing a manufacturing step of a gray scale mask of the present invention shown in Fig. 1, and Fig. 3 is a gray scale of the invention A schematic cross-sectional view of the manufacturing steps of the reticle 100. In the present embodiment, in the production of a mask having a gray scale, first, a mask blank 1〇3 in which the light shielding film 102 of the first film is formed on the transparent substrate 1〇1 is prepared (Fig. 2(a)). If the light-shielding film of the reticle blank is a chrome film or a chromium nitride film, the chrome film or the chromium nitride film can be formed by a sputtering method, and it is usually used as a reticle blank, which can be easily obtained. Next, the light-shielding film 1〇2 of the first film is patterned by performing the first mask patterning on the mask blank 1 〇3 in accordance with the conventional method. In other words, a photoresist such as a photosensitive resist such as a 312XP/invention specification (supplement)/9W) 1/95134519 15 1363247 which is exposed to an exposure apparatus such as a laser exposure apparatus is applied to the light-shielding film 102, and is applied after coating. The film is baked at a predetermined time to form a photoresist film 1〇4 for a light-shielding film having a uniform thickness (Fig. 2(b)). In addition, the exposure exposure of the mask, such as an EB exposure apparatus or a laser exposure apparatus, can be used in the present invention, but with the large-scale display and the diversification of manufacturing such as LCD or pDp, The mask is also becoming larger, and the photomask for the image display element is mainly a laser exposure device. Next, pattern drawing is performed on the photoresist film 104 on the light-shielding film by energy rays 1 〇 5 such as laser light (Fig. 2(c)). In the present embodiment, the pattern drawing is performed so as to form a boundary between the light-shielding film region and the semi-transparent film region formed by the subsequent step, and a part of the light-shielding film 102 is patterned. The pattern drawing for etching the same place in the same place as the light-shielding film and the semi-transparent film is carried out at the time of the second mask patterning. In the case of the drawing, in the non-transfer area of the mask, a plurality of drawing lure alignment marks (not shown) used for alignment when the second layer semi-transparent film is patterned are disposed. Next, in accordance with the characteristics of the photoresist to be used, a post-exposure baking step is performed as needed, and the photoresist is developed using a predetermined developer, and rinsed to form a photoresist pattern 106 for the light-shielding film (Fig. 2(d) ). Next, the light-shielding film 1〇2 exposed from the light-shielding film resist pattern 1〇6 is etched to form a light-shielding film pattern 1〇7 (Fig. 2(e)), and the remaining photoresist is removed and removed. A substrate 1 8 having a light-shielding pattern is obtained (Fig. 2(f)). The light-shielding film pattern 〇7 only forms a boundary where the light-shielding film region is in direct contact with the semi-transparent film region, and in this stage, the same as the translucent film 312XPi/invention specification (supplement)/96-01/95134519 16 1363247 The portion of the light-shielding film where the etching is performed is not etched and remains. - The etching of the light-shielding film ι〇2 can be performed by wet etching or dry etching. For example, when it is a photomask for image display elements, dry etching is performed with the cover being enlarged. The device and material cost will be too high, and a large area of dry etching will cause deterioration of etching uniformity, so it is preferable to adopt wet etching. When the light-shielding film 1〇2 is a chromium-based film, it is preferable to use a nitric acid-based wet type surrogate. In the present embodiment, after the patterning step of the first layer, the inspection of the substrate 108 having the light shielding film pattern is performed, and the step of defect correction may be performed as needed. When a chrome-based ruthenium is used as the light-shielding film, it is preferable to adopt a mask inspection technique and a correction technique of a conventional chrome-based film. By performing the mask pattern inspection, the pattern defect inspection step, and the optional correction step, it is possible to prevent the defective substrate from being transported to the next step, thereby improving the yield and contributing to the reduction of the mask cost. Next, on the entire surface of the substrate 108 having the light-shielding film pattern, a translucent film 109 is formed (Fig. 2(g)). Among them, the translucent film 109 is preferably composed of the same material as the above-mentioned light shielding film 1〇2. When the light-shielding 臈1 〇2 is composed of a chrome-based material as described above, the translucent enamel 109 is a film containing j or more of two or more kinds of oxygen, gas, carbon, etc., and having a high transmittance. And, when the layer is laminated on the light-shielding film, the film composition and the film thickness can be optimized in such a manner that the moon b lowers the reflectance. When a translucent film containing oxygen, nitrogen, carbon or the like is contained, the absorbance thereof varies depending on the composition, so that the desired penetration and antireflection characteristics can be achieved by simultaneously controlling the film thickness and composition. For example, when the chromium oxide film is used as the translucent film 312XP/invention specification (supplement), 1/95134519 1363247 109, the film thickness in the range of about 5 nm to 15 () nm is used. The film formation method of the half: = 1 〇 9 is the same as the method of forming the chrome shielding film, and a vacuum film forming method such as sputtering is used. Use Next (10) The first film 109 is patterned by the 帛2 times mask pattern making step, and the #π a a 牛牛透*... film macro: the semi-transparent film pattern of the lower light-shielding film pattern 107 is aligned. In other words, a photoresist such as a photosensitive photoresist that is exposed to an exposure device such as a laser exposure device is applied to the condensed scented scented scented scented scented scented scented scented stencils, which are coated and dried for a predetermined period of time. Thread, shape, upper * 〇, master Gongjun 3 (8)). Shaw formation + photoresist film 110 for transparent film (Fig. Next, pattern drawing is performed using energy rays (1) such as laser light. At the time of drawing, 筮^ @ Λ , 犋i (J9's pair of oblique layer shielding) The alignment mark is applied and the alignment is performed (Fig. 3(1)). In the present invention, the alignment mark provided in the mask pattern can be easily detected by the photoresist film no, and the height of the drawing position is improved. In accordance with the characteristics of the photoresist used, the post-exposure baking step is performed as needed, and then the photoresist is developed using a predetermined developer, and rinsed to form a photoresist pattern 112 for the translucent film (circle 3(j) Next, the translucent film 109 exposed by the resist pattern 112 of the translucent film is etched, and then the exposed light-shielding film pattern 1 〇 7 is etched to form a semi-transparent film pattern 113 and a light-shielding film pattern. 114 (Fig. 3(k)). After the semi-transparent film is engraved, the portion where the lower layer of the shading is exposed is again patterned by the rice mask, thereby re-executing the masked portion of the mask. Different from the original _ engraved (four) bits. In addition, the use is the same as the shading film In the case of a semi-transparent film composed of materials, continuous 312XP/invention specification (supplement)/96·01/95134519 18 (t 1363247. into shading: pattern of hair (four) and a pattern of light-shielding film. ', & early The secondary pattern is etched to form a 半 ' ' 裳 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Correction is performed. Correction m' is deposited on the light-shielding film on the translucent enamel and is formed by the pattern # portion 'light-shielding film and the cross-sectional edge portion of the semi-transparent film = back ground, and the other edge portion of the light-shielding film pattern 114 is stepped. (Second Embodiment) Eight persons will be described with respect to the second member. In the second embodiment, a method of manufacturing a general-purpose mask blank in which a low-reflection layer is provided in advance on a light-shielding film is used. 4 and subsequent FIG. 5 are schematic cross-sectional views showing another manufacturing step of the gray-scale photomask of the present invention. / This embodiment t is prepared on the transparent substrate 201 when the photomask having the gray scale is produced. Set the shading 臈 202 and in it The double-layered reticle blank 220 on which the low-reflection film 203 is formed (FIG. 4(a)). The light-shielding film 202 such as the reticle blank 220 may be a chromium nitride film, and the low-reflection film 203 is a chrome oxide film. Generally, the reticle blank is generally used. However, because the low-reflection film 203 of the reticle blank 220 is not provided
312XP/發明說明書(補件)/96-01/95134519 19 1363247 作為半透明膜的既定功能，因而直接使用通常所使用之光 罩毛胚的膜構造，將無法獲得本發明具灰階之光罩。 本發明具灰階之光罩係具有在透明基板上，混雜著依序 .積層存在遮光膜與半透明膜的遮光區域、僅存在半透明膜 的半透明區域、及遮光膜與半透明膜均未存在的穿透區域 的形態。 所以，首先，將遮光膜202上的低反射膜203全部蝕刻 去除，而獲得遮光膜202露出的基板（圖4(b)：^低反射 膜2 0 3的钱刻可利用蝕刻液與蝕刻時間進行控制。 其次，將遮光膜202露出的上述基板，依照常法施行第 1次遮罩圖案製版，而將遮光膜2〇2 一部分施行圖案化。 換吕之，在遮光膜202上塗佈對應雷射曝光裝置等曝光裝 置的感光性光阻劑等光阻劑，經塗佈後施行既定時間烘 烤，形成均勻厚度的遮光膜用光阻膜2〇4(圖 八人利用雷射光等能量射線205施行遮光膜用光阻膜 # 204的圖案描缘（圖4(d))。本實施形態中，圖案描繪係依 僅形成遮光膜區域與由後續步驟所形成之半透明膜區域 所直接接觸之邊界的方式進行描繪，並將遮光膜2〇2 一部 分施行圖案化者。用於對遮光膜與半透明膜之相同地方一 次地進打钱刻的圖案描繪，係在第2次遮罩圖案製版時實 施。 再者，在該描繪時’在遮罩的非轉印區域卜複數個描 會配置在第2層半透明膜施行圖案化時對位所使用的描 繪用對準標記（未圖示）。 312XP/發明說明書(補件)/96-01/95134519 20 ,· 1363247 接著，配合所使用之光阻劑的特性，視需要施行曝光後 烘烤步驟，然後對光阻劑使用既定顯影液施行顯影，經潤 洗，形成遮光膜用光阻圖案206(圖4(e))。312XP/Invention Manual (Supplement)/96-01/95134519 19 1363247 As a predetermined function of the translucent film, the film structure of the reticle blank which is usually used is directly used, and the reticle with the gray scale of the present invention cannot be obtained. . The gray-scale reticle of the present invention has a light-shielding region on the transparent substrate mixed with the light-shielding film and the semi-transparent film, a translucent region in which only the semi-transparent film exists, and a light-shielding film and a semi-transparent film. The form of the penetrating area that does not exist. Therefore, first, the low-reflection film 203 on the light-shielding film 202 is completely etched away, and the substrate on which the light-shielding film 202 is exposed is obtained (Fig. 4(b): ^ low-reflection film 203 can be etched using etching liquid and etching time Next, the substrate on which the light-shielding film 202 is exposed is subjected to the first mask pattern plate making according to a usual method, and a part of the light-shielding film 2〇2 is patterned. A photoresist such as a photosensitive photoresist such as a laser exposure device is coated and baked for a predetermined period of time to form a photoresist film 2 〇 4 for a light-shielding film having a uniform thickness (Fig. 8 uses energy such as laser light) The ray 205 is patterned by the photoresist film #204 for the light-shielding film (Fig. 4(d)). In the present embodiment, the pattern is drawn directly by forming only the light-shielding film region and the semi-transparent film region formed by the subsequent step. The pattern of the boundary of the contact is drawn, and a part of the light-shielding film 2〇2 is patterned. The pattern for drawing the money in the same place as the light-shielding film and the semi-transparent film is in the second mask. Implemented during pattern making. At the time of drawing, in the non-transfer area of the mask, a plurality of drawing alignment marks (not shown) used for alignment when the second layer of the semi-transparent film is patterned are disposed. 312XP/ Inventive specification (supplement)/96-01/95134519 20 , · 1363247 Next, in accordance with the characteristics of the photoresist used, an exposure post-baking step is performed as needed, and then the photoresist is developed using a predetermined developer. The rinsing is performed to form a photoresist pattern 206 for a light-shielding film (Fig. 4(e)).
其次’對從遮光膜用光阻圖案206中露出的遮光膜2〇2 施行飿刻，而形成遮光膜圖案207(圖4(f))，再將殘留的 光阻劑剝離去除，獲得具遮光膜圖案之基板2〇8(圖 4(g))。遮光膜圖案207係僅形成遮光膜區域與半透明膜 區域所直接接觸的邊界，在此階段中，對與半透明膜相同 地方知行餘刻的遮光膜部分並未被钱刻而仍殘留著。 如第1實施形態所述，遮光膜202的蝕刻係可採用濕式 蝕刻或乾式蝕刻方法，最好使用濕式蝕刻。當遮光膜2〇2 為鉻系膜的情況，最好使用硝酸鈽系濕式蝕刻劑。 本實施形態令，於第一膜施行圖案化步驟之後，施行具 遮光膜圖案之基板m的檢查，視需要亦可施行缺陷修^ 的步驟。當遮光膜202使用鉻膜的情況下，最好採取習知 鉻膜的光罩檢查技術、修正技術。藉由施行該檢查步驟、 及視需要的修正步驟’可防止對下―步驟輸送具有缺陷的 其次，在具遮光臈圖案之基板2〇δ整面上 膜(圖5⑻）。帛2實施形態的半透明膜材料、成膜方 法、特性，亦均如同第丨實施形態。 其次，利用第2次遮罩圖案製版步驟，對 明膜209及第一膜施杆阁安儿 r干通 乐膘轭仃圖案化，形成與下層遮光膜圖案對 位的半透明膜圖荦。拖士 .. 矛τ 、固茶換曰之，在丰透明膜209上塗佈對應 312ΧΡ/發明說明書(補件)/96-01/95134519 2】 1363247 雷射曝光裝置等曝光裝置的感光性光阻劑等光阻劑，經塗 佈後並施行既定時間烘烤，形成半透明膜用光阻膜1 5(0) 〇 、、圃 • ·接著，利用雷射光等能量射線211施行半透明膜用光阻 •膜210的圖案料。在該描緣時，檢測第i層遮光膜 準標記並施行對位（圖5 (j))。 其次，配合所使用光阻劑的特性，視需要施行曝光後烘 烤步驟，然後對光阻劑使用既定顯影液施行顯影，經潤 着洗’形成半透明膜用光阻圖案212(圖5(k))。 其次，對從半透明膜用光阻圖案212所露出的半透明膜 209施行蝕刻，接著，當下層遮光膜圖案2〇7露出時，對 該地方更進一步連續施行蝕刻，藉此形成半透明膜圖案 213與遮光膜圖案214(圖5(1))。本實施形態中，藉由於 遮光膜與半透明臈使用同系材料，則可利用同一技術一次 地對遮光膜與半透明膜施行圖案化，因而較佳。 • 上述本實施形態中，遮光膜係利用2次的圖案蝕刻而形 成遮光膜圖案，但本發明亦可僅施行單次圖案蝕刻以形成 遮光膜圖案。 其次，將殘留的半透明膜用光阻圖案212剝離去除，獲 得具灰階之光罩200(圖5(m))。然後，施行遮罩檢查、視 需要的修正。 在圖5(m)中，遮光膜圖案214與半透明膜圖案213所 積層存在的遮光膜區域中，在經圖案蝕刻的積層側，遮光 膜圖案214與半透明膜圖案213係利用同一技術一次地施Next, 'the light-shielding film 2〇2 exposed from the photoresist pattern 206 for light-shielding film is etched to form a light-shielding film pattern 207 (Fig. 4(f)), and the residual photoresist is peeled off to obtain a light-shielding The substrate of the film pattern 2〇8 (Fig. 4(g)). The light-shielding film pattern 207 is formed only by the boundary where the light-shielding film region and the semi-transparent film region are in direct contact with each other. At this stage, the portion of the light-shielding film which is the same as the semi-transparent film is left untouched and remains. As described in the first embodiment, the etching of the light-shielding film 202 may be a wet etching or a dry etching method, and it is preferable to use wet etching. When the light-shielding film 2〇2 is a chromium-based film, it is preferable to use a cerium nitrate-based wet etchant. In the present embodiment, after the patterning step of the first film is performed, the inspection of the substrate m having the light-shielding film pattern is performed, and the step of repairing the defect may be performed as needed. When the opaque film 202 is a chrome film, it is preferable to adopt a reticle inspection technique and a correction technique of a conventional chrome film. By performing this inspection step and the correction step as needed, it is possible to prevent the film from being defective in the next step, and the film is formed on the entire surface of the substrate 2 〇 δ having a light-shielding pattern (Fig. 5 (8)). The translucent film material, the film formation method, and the characteristics of the 帛2 embodiment are also the same as the first embodiment. Next, using the second mask pattern making step, the bright film 209 and the first film are patterned to form a semi-transparent film pattern aligned with the lower light-shielding film pattern.拖士.. Spear τ, solid tea for 曰, apply 312ΧΡ/invention manual (supplement)/96-01/95134519 2 on the transparent film 209 2] 1363247 Photosensitive light of exposure device such as laser exposure device A photoresist such as a resist is applied and baked for a predetermined period of time to form a photoresist film for a translucent film. 1 5 (0) 〇, 圃 · · Next, a semi-transparent film is applied by an energy ray 211 such as laser light. The pattern of the photoresist/film 210 is used. At the time of the drawing, the i-th light-shielding film mark is detected and the alignment is performed (Fig. 5 (j)). Next, in accordance with the characteristics of the photoresist to be used, a post-exposure baking step is performed as needed, and then the photoresist is developed using a predetermined developer, and the photoresist pattern 212 is formed by soldering to form a translucent film (Fig. 5 (Fig. 5 k)). Next, the semi-transparent film 209 exposed from the resist pattern 212 for the translucent film is etched, and then, when the underlying light-shielding film pattern 2〇7 is exposed, the place is further continuously etched, thereby forming a semi-transparent film. The pattern 213 and the light shielding film pattern 214 (Fig. 5 (1)). In the present embodiment, since the light-shielding film and the translucent film are made of the same material, the light-shielding film and the semi-transparent film can be patterned once by the same technique, which is preferable. In the above-described embodiment, the light-shielding film is patterned by secondary pattern etching to form a light-shielding film pattern. However, in the present invention, only one-time pattern etching may be performed to form a light-shielding film pattern. Next, the remaining translucent film was peeled off by the photoresist pattern 212 to obtain a gray scale photomask 200 (Fig. 5(m)). Then, perform a mask check and correct the correction as needed. In FIG. 5(m), in the light-shielding film region in which the light-shielding film pattern 214 and the semi-transparent film pattern 213 are laminated, the light-shielding film pattern 214 and the semi-transparent film pattern 213 are used once by the same technique on the pattern-etched laminated side. Ground
312XP/發明說明書(補件)/96-01/95134519 22 ( S 丄：^ ；Z47 =Γ、Γ ’因而形成遮光膜圖案214邊緣部與半透明膜圖案 邊緣部的位置呈大致相同的構造。 ” 制另^在本發明巾’相關半透明膜？透率與反射率的控 .'、上述’必需將半透明膜穿透率控制在15〜85%範 圍t麵遮絲上積層料透明膜㈣光區域反射率控 用久3〇%。滿足此種條件的半透明膜與遮光臈，係利 、質調整及厚度選擇而實現。半透明膜一例係如上 ㈣遮光膜一例係使用金屬鉻膜。膜質調 氧田為^透明膜的情況下，改變濺鍍條件而調整氧化絡 匕長度等。當遮光膜的情況，將添加若干添加物。已 =如使用氮。或改變密度。通常，改變賤鍍條件並改變 、”曰性（粒徑）’或於膜中混雜入孔洞（氣泡），而調整表觀 c f n(折射率）、k(衰減係數（Extinction312XP/Invention Manual (Supplement)/96-01/95134519 22 (S 丄: ^ ; Z47 = Γ, Γ ' Thus, the edge portion of the light shielding film pattern 214 is formed to have substantially the same position as the edge portion of the semitransparent film pattern. "In the invention, the related translucent film of the invention" is controlled by the permeability and the reflectivity. 'The above' must be controlled to the translucent film transmittance in the range of 15 to 85%. (4) The control of the reflectance of the light area is longer than 3〇%. The semi-transparent film and the shading enamel satisfying this condition are realized by the adjustment of the quality, the quality adjustment and the thickness. A case of the semi-transparent film is as follows (4) The case of the light-shielding film is a metal chromium film. In the case of a membranous oxygen field, in the case of a transparent film, the sputtering conditions are changed to adjust the length of the oxidized enthalpy, etc. In the case of a light-shielding film, a number of additives are added. If the nitrogen is used, or the density is changed. Usually, the change is made.贱 plating conditions and change, "曰 (particle size)" or mixed into the pores (bubbles) in the film, and adjust the apparent cfn (refractive index), k (attenuation coefficient (Extinction
Coefficient))。 、圖7分別表示遮光膜使用金屬鉻膜（n=24' = •1) ’且膜厚為7〇nm ’而半透明膜係使用氧化絡膜 8 k 0. 3)，且使膜厚在〇〜i〇〇nm範圍内進行變化， 此時對g射、線（43_)的穿透率（半透明膜）與反射率（遮 光臈+半透明膜）之關係。由目6中得知，當欲獲得穿透率 40%半透明區域時，半透明膜的膜厚成為5〇抓，此時的遮 光部反射率由圖7中得知，為約21%，成為較良好的低反 射膜。另-方面’當期望穿透率為繼時，半透明膜膜厚 成為約5mn，且遮光部反射率為34%，屬於不太良好的低 反射條件。此情況下’需要改變遮光膜與半透明膜的膜 312^P/發明說明書(補件)/96-01/95134519 質’以改變η與k。 在上述說明令，雖將鉻系膜使 外，諸如m ,义用作為材料’但除此之 般可使用作 ’一 ’、矽、氧化矽、氮氧化矽等一 了使用作為遮罩材料的薄膜，均可使用。 再者，針對上述本發明灰階光罩， 行笱日Η心Η # 干躍針對2灰階遮罩進 Μ六由重複騎製版、核、再製版，亦可實 2灰h以上的多灰階光罩。 〔實施例〕 (實施例1) 學研磨過的33GX45Gmm合成石英基板上形成由 斤構成之約l〇0nm遮光臈的常用光罩毛胚上將市售光 =(東京應化工業公司製ip—3500)塗佈成約380⑽經 加熱S 120度的加熱板施行15分鐘烘烤後，再利用 先軍用雷射摇緣裝置MICR0NIC公司製咖i〇〇〇_tft3施 =所需遮光膜圖案的描繪。此處所描繪的圖案在最終為完 全遮光用的圖案。 一其次，利用專用顯影劑（東京應化卫業公司製咖）施 行顯影’獲得遮光膜用光阻圖案。 其次，將光阻圖案使用作為蝕刻用遮罩，對鉻膜施行蝕 刻再將殘留的光阻圖案施行剝膜，獲得所需之遮光膜圖 案另外，鉻膜的蝕刻係使用市售硝酸鈽系濕式蝕刻劑 (INCTEC公司製MR-ES)。鉻膜的蝕刻時間約6〇秒。 其次，針對依此所獲得之具遮光膜圖案之基板，施行遮 光膜圖案尺寸檢查、圖案缺陷檢查、視需要的圖案修正， 312xp/發明說明書(補件)/96-01/95134519 24 1363247 ^後經充分清洗後，再利用濺鑛法形成半透明膜的氧化鉻 乳化鉻朗膜厚約3Gnm，穿透率約(波長g射 女nm)肖半透明膜具有抗反射功能，且由遮光膜與 膜所形成的區域在g射線中，將顯示出低於的 反射率。 阻劑（東京應化製ip-3500) Ϊ 2 0 °C的加熱板上施行15 其次，在其上面再度將市售光 塗佈成約380nm，並於經加熱至 分鐘的烘烤。Coefficient)). Figure 7 shows that the light-shielding film uses a metal chromium film (n=24' = •1)' and the film thickness is 7〇nm', and the semi-transparent film uses an oxide film 8k 0.3. 3), and the film thickness is The relationship between the transmittance (translucent film) and the reflectance (shading 臈 + semi-transparent film) of g-ray, line (43_), and change in the range of 〇~i〇〇nm. It is known from Item 6 that when a transmissivity of 40% translucent area is to be obtained, the film thickness of the translucent film becomes 5 〇, and the reflectance of the light-shielding portion at this time is about 21% as seen from FIG. Become a better low reflection film. On the other hand, when the desired transmittance is continued, the thickness of the semi-transparent film becomes about 5 mn, and the reflectance of the light-shielding portion is 34%, which is a poorly good low-reflection condition. In this case, it is necessary to change the film of the light-shielding film and the translucent film 312^P/invention specification (supplement)/96-01/95134519 to change η and k. In the above description, although the chrome-based film is used, such as m, it is used as a material, but in addition, it can be used as a mask material for use as a 'a', a bismuth, a bismuth oxide, a bismuth oxynitride or the like. The film can be used. Furthermore, in view of the above-mentioned gray-scale reticle of the present invention, the 笱 Η Η Η 干 干 干 干 针对 针对 针对 针对 针对 2 2 2 2 2 2 2 2 2 2 2 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由Order mask. [Examples] (Example 1) On a 33GX45Gmm synthetic quartz substrate which was ground, a conventional mask blank of about 10 nm of light-shielding yoke formed of jin was formed, and the commercially available light was used (= ITO, manufactured by Tokyo Yinghua Industrial Co., Ltd.) 3500) Coating into a heating plate of about 380 (10) heated by S 120 degrees for 15 minutes, and then using the first military laser edge device MICR0NIC company to make a description of the desired light-shielding film pattern. The pattern depicted here is ultimately a pattern for complete shading. First, development was carried out by using a dedicated developer (manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a photoresist pattern for a light-shielding film. Next, the photoresist pattern is used as an etching mask, the chromium film is etched, and the remaining photoresist pattern is stripped to obtain a desired light-shielding film pattern. Further, the etching of the chromium film is performed using commercially available cerium nitrate-based wet film. Etchant (MR-ES, INCTEC). The etching time of the chromium film is about 6 sec. Next, for the substrate having the light-shielding film pattern thus obtained, the light-shielding film pattern size inspection, pattern defect inspection, and optional pattern correction are performed, 312xp/invention specification (supplement)/96-01/95134519 24 1363247^ After sufficient cleaning, the chrome oxide emulsified chrome-plated film formed by the splashing method is about 3Gnm, and the transmittance is about (wavelength g-ray female nm). The translucent film has anti-reflection function, and is made of a light-shielding film. The area formed by the film will exhibit a lower reflectance in the g-ray. The resist (IP-3500 manufactured by Tokyo Chemical Co., Ltd.) was applied to a hot plate at 20 ° C. Next, commercially available light was again coated thereon to about 380 nm, and baked for several minutes.
接著，再度利用雷射描繪裝置MiCR〇NIC公司製 LRS11_-TFT3，描繪出成為半透明膜圖案的圖像，並利 用專用顯影劑（東京應化工業公㈣_)施行顯影，獲 得半透明膜用光阻圖案。另外，描繪裝置LRS11〇〇〇係^ 有對準描繪功能，對位於已形成的遮光膜圖案，而半 透明膜圖案。 其次，以光阻圖案為遮罩，例用市售硝酸鈽系濕式蝕刻 鲁劑（INCTEC公司製MR-ES)對半透明膜施行蝕刻，接著再對 露出的遮光膜施行蝕刻，獲得半透明膜圖案與最終經蝕刻 的遮光膜圖案。 最後將殘留的光阻進行剝膜，經施行圖案尺寸檢查、缺 陷檢查等檢查步驟，並視需要施行圖案修正’獲得所需的 具灰階之光罩。 (實施例2) 準備在經光學研磨過的330x450mm合成石英基板上，形 成作為遮光膜的氮化鉻膜’並在其上面設置低反射膜的氧 312XP/發明說明書(補件)/96-01/95134519 25 ( S ) 1363247 A鉻膜之雙層結構的市售光罩毛胚。氮化鉻膜膜厚係 7〇nm ’氧化鉻膜膜厚約2〇nm。 其次’利用市售硝酸鈽系濕式蝕刻劑（丨NCTEC公司製 MR ES) ’將上述毛胚的低反射膜之氧化鉻膜全部施行蝕刻 •去除，獲得露出遮光膜的基板。 其次，在上述裸露出的遮光膜上，將市售光阻劑（東京 應化工業a司衣i p-35〇〇 )塗佈成約38Onm，並利用經加熱 至120度的加熱板施行15分鐘烘烤後，再利用光罩用雷 射描繪裝置MICRONIC公司製LRS1 1000-TFT3，描繪出所 需的遮光膜圖案。 其次，利用專用顯影劑（東京應化工業公司製NMD3)施 行顯影’獲得遮光膜用光阻圖案。 其次，以遮光膜用光阻圖案作為蝕刻用遮罩，並利用市 售硝酸鈽系濕式蝕刻劑（INCTEC公司製MR—ES)，對遮光膜 施行蝕刻’而形成遮光膜圖案，再將殘留的光阻施行剝離 籲去除，獲得具遮光膜圖案之基板。 其次，施行上述具遮光膜圖案之基板的圖案尺寸檢查、 圖案缺陷檢查、視需要的圖案修正，且經充分清洗後，再 利用濺鍍法形成半透明膜的氮氧化鉻膜。氮氧化鉻膜膜厚 設為20nm，穿透率约30%(波長i射線：365ηιη>該半透明 臈係具有抗反射功能，且由遮光膜與半透明膜所構成的區 域係在i射線令顯不出未滿的反射率。 其次，再度將市售光阻劑（東京應化工業公司製ip_35〇〇) 塗佈成約380mn，並利用經加熱至12〇度的加熱板施行15 312XP/發明說明書(補件)/96-01/95134519 26 1363247 刀鐘供烤後’再利用光罩用雷射描繪裝置MICRONIC公司 製LRS1 1 000-TFT3，描繪出所需的半透明膜圖案。 其次’利用專用顯影劑（東京應化工業公司製NMD3)施 ..行顯影，而形成半透明膜用光阻圖案。 其次，以光阻圖案作為蝕刻用遮罩，並使用市售硝酸鈽 系濕式蝕刻劑（INCTEC公司製MR-ES)，對氮氧化鉻膜施行 蝕刻，接著再對露出的遮光膜施行蝕刻，並將殘留的光阻 像施行剝臈，獲得所需的半透明膜圖案與遮光膜圖案。 其··人，經施行圖案尺寸檢查、缺陷檢查等檢查步驟，並 視需要施行圖案修正，獲得所需的具灰階之光罩。 【圖式簡單說明】 圖1為本發明具灰階之光罩之一實施形態的剖面示意 圖。 圖2(a)至（g)為圖i所示之本發明具灰階之光罩之製造 步驟的剖面示意圖。 •圖3(h)至為接著圖2，本發明具灰階之光罩之製造 步驟的剖面示意圖。 圖4(a)至（g)為本發明具灰階之光罩的另一製造步驟剖 面示意圖。 圖5(h)至（m)為接著圖4 ,本發明具灰階之光罩之另一 製造步驟的剖面示意圖。 圖6為遮光臈之1例的穿透率圖。 圖7為遮光膜與半透明膜組合之1例的反射率圖。 圖8(a)至（c)為說明使用通用光罩毛胚時所產生問題的 312XP/發明說明書(補件)/96-01/95134519 ” 具灰階之光罩 透明基板 遮光膜 光罩毛胚 遮光膜用光阻膜 能量射線 遮光膜用光阻圖案 604 遮光膜圖案 具遮光膜圖案之基板 半透明膜 半透明膜用光阻膜 半透明膜用光阻圖案 半透明膜圖案 低反射膜 邊緣部 低反射膜圖案 1363247 步驟剖面圖。 【主要元件符號說明】 100 .101 ' 201 > 601 102 、 202 、 602 103 、 220 、 600 104 、 204 105 、 111 、 205 、 211 ® 106 ' 206 107 、 114 、 207 、 214 、 108 、 208 109 、 209 、 607 110 > 210 112 、 212 113 、 213 I 203 、 603 605 606 312XP/發明說明書(補件)/卯-01/95134519 28Then, LRS11_-TFT3 manufactured by MiCR〇NIC Co., Ltd., a laser drawing device, was used to draw an image of a semi-transparent film pattern, and developed by a special developer (Tokyo Chemical Industry Co., Ltd.) to obtain a light for a translucent film. Resistance pattern. In addition, the drawing device LRS11 has an alignment drawing function, and the pair of light-shielding film patterns are formed, and the semi-transparent film pattern is formed. Next, using a photoresist pattern as a mask, a translucent film was etched by using a commercially available lanthanum nitrate wet etching agent (MR-ES manufactured by INCTEC), and then the exposed light shielding film was etched to obtain translucency. The film pattern and the finally etched light shielding film pattern. Finally, the residual photoresist is stripped, and inspection steps such as pattern size inspection and defect inspection are performed, and pattern correction is performed as needed to obtain a desired gray scale mask. (Example 2) Preparation of a chromium nitride film as a light-shielding film on an optically polished 330x450 mm synthetic quartz substrate and a low-reflection film on which oxygen 312XP/invention specification (supplement)/96-01 was prepared /95134519 25 (S) 1363247 A commercially available reticle blank of a two-layer structure of a chromium film. The chromium nitride film thickness is 7 〇 nm ' chrome oxide film thickness of about 2 〇 nm. Then, the chrome oxide film of the low-reflection film of the above-mentioned blank was etched and removed by a commercially available lanthanum nitrate-based wet etchant (MR ES manufactured by NCTEC Co., Ltd.) to obtain a substrate on which the light-shielding film was exposed. Next, on the exposed light-shielding film, a commercially available photoresist (Tokyo Chemical Industry Co., Ltd. i p-35〇〇) was applied to about 38 Onm, and was applied for 15 minutes using a heating plate heated to 120 degrees. After baking, the LRS1 1000-TFT3 manufactured by MICRORON Co., Ltd., a laser drawing device, was used to draw a desired light-shielding film pattern. Then, development was carried out by using a special developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a photoresist pattern for a light-shielding film. Next, a photoresist pattern for a light-shielding film is used as an etching mask, and a light-shielding film is etched by using a commercially available lanthanum nitrate-based wet etchant (MR-ES manufactured by INCTEC) to form a light-shielding film pattern. The photoresist is stripped and removed to obtain a substrate having a light-shielding pattern. Next, the pattern size inspection, the pattern defect inspection, and the pattern correction as necessary were performed on the substrate having the light-shielding film pattern, and after sufficiently cleaning, a chromium oxynitride film of a translucent film was formed by sputtering. The film thickness of the chromium oxynitride film is set to 20 nm, and the transmittance is about 30% (wavelength i-ray: 365 ηιη); the translucent lanthanum system has an anti-reflection function, and the region composed of the light-shielding film and the semi-transparent film is in the i-ray order. Secondly, the commercially available photoresist (IP_35〇〇 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated to about 380 nm, and 15 312 XP/invented was performed using a heating plate heated to 12 degrees. Instruction manual (supplement) /96-01/95134519 26 1363247 After the knife clock is baked, the LRS1 1 000-TFT3 manufactured by MICRONIC Co., Ltd., which uses a laser for the reticle, is used to draw the desired translucent film pattern. A special developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied to form a resist pattern for a translucent film. Next, a photoresist pattern was used as an etching mask, and a commercial lanthanum nitrate wet etching method was used. The agent (MR-ES manufactured by INCTEC) etches the chromium oxynitride film, and then etches the exposed light-shielding film, and peels off the remaining photoresist image to obtain a desired semi-transparent film pattern and light-shielding film. Pattern. People, people, pattern size Checking steps such as inspection and defect inspection, and performing pattern correction as needed to obtain the desired gray-scale mask. [Simplified Schematic] FIG. 1 is a schematic cross-sectional view showing an embodiment of a gray-scale mask of the present invention. 2(a) to (g) are schematic cross-sectional views showing the manufacturing steps of the gradation mask of the present invention shown in Fig. i. Fig. 3(h) to Fig. 2, the gray light of the present invention Figure 4 (a) to (g) are schematic cross-sectional views showing another manufacturing step of the gray-scale reticle of the present invention. Figures 5 (h) to (m) are subsequent to Figure 4, the present invention A cross-sectional view of another manufacturing step of a gray scale photomask. Fig. 6 is a transmittance diagram of one example of a shading enamel. Fig. 7 is a reflectance diagram of an example of a combination of a light shielding film and a translucent film. a) to (c) are 312XP/invention manual (supplement)/96-01/95134519 for explaining the problem caused by using a general-purpose mask blank. Gray-scale mask transparent substrate light-shielding mask blank blank mask Photoresist film energy ray shielding film photoresist pattern 604 light shielding film pattern light shielding film pattern substrate translucent film translucent film Photoresist film semi-transparent film resist pattern semi-transparent film pattern low-reflection film edge portion low-reflection film pattern 1363247 step sectional view. [Main component symbol description] 100 .101 '201 > 601 102 , 202 , 602 103 , 220 , 600 104 , 204 105 , 111 , 205 , 211 ® 106 ' 206 107 , 114 , 207 , 214 , 108 , 208 109 , 209 , 607 110 > 210 112 , 212 113 , 213 I 203 , 603 605 606 312XP / Invention description (supplement) / 卯-01/95134519 28
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW517286B (en) * | 2000-12-19 | 2003-01-11 | Hoya Corp | Gray tone mask and method for producing the same |
| KR100599054B1 (en) * | 2001-04-11 | 2006-07-12 | 삼성전자주식회사 | Transmittance Adjustment Mask and Method for Manufacturing thereof |
| DE10310136B4 (en) * | 2003-03-07 | 2007-05-03 | Infineon Technologies Ag | Mask set for the projection of pattern patterns arranged on the masks of the sentence and matched to one another on a semiconductor wafer |
| JP2005091855A (en) * | 2003-09-18 | 2005-04-07 | Dainippon Printing Co Ltd | Method for manufacturing gradation mask |
| JP4608882B2 (en) * | 2003-12-22 | 2011-01-12 | セイコーエプソン株式会社 | Exposure mask, method for manufacturing the same, and method for manufacturing a liquid crystal device |
| JP2005241693A (en) * | 2004-02-24 | 2005-09-08 | Shin Etsu Chem Co Ltd | Halftone phase shift mask blank, its manufacturing method and halftone phase shift mask and its manufacturing method |
-
2006
- 2006-09-19 TW TW095134519A patent/TW200717176A/en unknown
- 2006-09-19 CN CNA2006800345852A patent/CN101268417A/en active Pending
- 2006-09-19 US US12/066,203 patent/US8124301B2/en active Active
- 2006-09-19 WO PCT/JP2006/318892 patent/WO2007034930A1/en active Application Filing
- 2006-09-19 KR KR1020087005601A patent/KR20080037702A/en active Search and Examination
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| KR20080037702A (en) | 2008-04-30 |
| US8124301B2 (en) | 2012-02-28 |
| CN101268417A (en) | 2008-09-17 |
| WO2007034930A1 (en) | 2007-03-29 |
| US20090220867A1 (en) | 2009-09-03 |
| TW200717176A (en) | 2007-05-01 |
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