CN113311660B - Mask base plate manufacturing method and gluing equipment with plasma heating device - Google Patents
Mask base plate manufacturing method and gluing equipment with plasma heating device Download PDFInfo
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- CN113311660B CN113311660B CN202110620806.0A CN202110620806A CN113311660B CN 113311660 B CN113311660 B CN 113311660B CN 202110620806 A CN202110620806 A CN 202110620806A CN 113311660 B CN113311660 B CN 113311660B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0664—Carbonitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a manufacturing method of a mask base plate and gluing equipment with a plasma heating device, wherein the manufacturing method comprises the following steps: providing a light-transmitting substrate; depositing a shading film on a light-transmitting substrate; depositing an antireflection film, which is an alkali oxide of Cr, on the light-shielding film; heating and baking the anti-reflection film to remove water from the anti-reflection film, and performing oxygen plasma treatment on the surface of the anti-reflection film to form an oxide film on the surface of the anti-reflection film; and coating chemical amplification type photoresist on the oxide film. The invention forms the oxide film at the interface of the anti-reflective coating and the chemical amplification type photoresist, can effectively avoid the neutralization reaction caused by the combination of electrons provided by the alkaline anti-reflective coating and quanta generated by the excitation of the chemical amplification type photoresist by illumination, and avoid the generation of foot-shaped patterns in the chemical amplification type photoresist, thereby forming the mask pattern with excellent resolution.
Description
Technical Field
The invention belongs to the field of semiconductor integrated circuit design and manufacture, and particularly relates to a manufacturing method of a mask base plate and gluing equipment with a plasma heating device.
Background
In forming a precise pattern in a semiconductor integrated circuit and a panel display process, a photolithography (Photo-Lithography) technique of a Photo mask (Photo mask) is necessary.
The typical mask manufacturing process includes the following steps:
first, a chromium compound light shielding film and an antireflection film are formed on a transparent quartz substrate, then a chemically amplified resist is coated on the antireflection film by spin coating, capillary transfer coating, or the like, and finally a mask having a specific light shielding film pattern and an antireflection film pattern is formed on a laminated mask blank.
Then, in order to form a desired mask pattern on the photoresist of the mask blank, an exposure process is performed by an electron beam or an excimer beam, and quanta (h+) are generated in the chemically amplified photoresist, in the electron or in the exposed portion to be exposed. The quantum forms a catalyst for quantum diffusion and decomposition reaction through a post-exposure baking (Post Exposure Bake) process, promotes the dissolution of substances in a developing solution, and the exposed part of the exposed chemically amplified photoresist is dissolved through development treatment, so that a pattern is formed on the non-exposed part.
Then, the light shielding film and the antireflection film of the base plate having the photoresist pattern are etched simultaneously to form an antireflection film pattern and a light shielding film pattern. Wet etching with etching solution or use of Cl 2 And dry etching with the same gas. In general, the light shielding film is composed of chromium nitride (CrN) and chromium carbonitride (CrCN), and the antireflection film is composed of a chromium component film containing an alkaline substance such as chromium oxynitride (CrON) and chromium carbonitride (CrCON).
Finally, the photoresist pattern is removed by using stripping liquid, and then the photomask is manufactured through the procedures of cleaning and the like.
In the above process, the chemically amplified resist generates quanta (h+), by the exposure process, and the decomposition reaction of the resist is promoted by the diffusion of quanta by the post-exposure bake (Post Exposure Bake) to form a pattern of high resolution. As shown in fig. 1, when the resist pattern is formed by coating the resist on the alkali anti-reflective coating, the electron generated by the alkali anti-reflective coating and the quantum of the chemical amplification resist are neutralized 301, which severely inhibits the diffusion of the quantum and the decomposition reaction of the resist. At this time, since the solubility of the chemically amplified resist developer is lowered, a resist pattern 302 having a foot pattern 303 is formed as shown in fig. 2.
If the photoresist pattern is patterned with a foot pattern, a defective pattern is formed when patterning the light shielding film and the anti-reflective film, and it is difficult to form an accurate pattern, thereby making it difficult to manufacture a photomask having a more precise critical dimension.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method for manufacturing a mask blank and a photoresist coating apparatus having a plasma heating device, for solving the problem that it is difficult to form an accurate mask blank pattern because a photoresist pattern is easily formed with a foot-shaped pattern in the prior art.
To achieve the above and other related objects, the present invention provides a method for manufacturing a mask blank, the method comprising the steps of: providing a light-transmitting substrate; depositing a shading film on the light-transmitting substrate; depositing an antireflection film, which is an alkali oxide of Cr, on the light shielding film; heating and baking the anti-reflection film to remove water of the anti-reflection film, and performing oxygen plasma treatment on the surface of the anti-reflection film to form an oxide film on the surface of the anti-reflection film; and coating chemical amplification type photoresist on the oxide film.
Optionally, the temperature range of heating and baking the anti-reflection film is 150-250 ℃, and the heating time range is 5-20 minutes, so as to remove the moisture of the anti-reflection film.
Optionally, the anti-reflection film comprises one of CrON and CrCON, and the gas introduced into the surface of the anti-reflection film for oxygen plasma treatment comprises O 2 CO and CO 2 One or a mixture of both of the above gases to form a CrO film on the surface of the antireflection film, wherein the time of the oxygen plasma treatment is between 5s and 60s, and the thickness of the formed oxide film is between 1nm and 10 nm.
Alternatively, the surface roughness of the antireflection film is between 0.01nm ra and 0.5nm ra.
Optionally, the chemically amplified resist comprises a resin soluble in a base, a photoacid generator, and a solvent.
Optionally, the light shielding film includes one of CrN and CrCN.
Alternatively, the pressure of the oxygen plasma treatment is between 1Pa and 150 Pa.
Optionally, the step of coating the chemical amplification type photoresist on the oxide film further comprises the step of soft baking the chemical amplification type photoresist, wherein the temperature of the soft baking is between 100 and 150 ℃ and the time is between 5 and 20 minutes.
Optionally, the method further comprises the step of developing and exposing the chemically amplified photoresist, wherein during the developing and exposing process, the oxide film is used for inhibiting the diffusion of electrons of the anti-reflective coating to the chemically amplified photoresist, so as to avoid neutralization reaction at the interface of the chemically amplified photoresist and the anti-reflective coating.
The invention also provides a gluing device with a plasma heating device, which is used for realizing the manufacturing method of the mask base plate, and comprises the following steps: the hot plate is used for bearing a mask base plate and heating the mask base plate to remove the moisture of the anti-reflection film and provide process temperature for a plasma treatment process and a chemical amplification type photoresist baking process; a vacuum chamber for providing a reaction space and a vacuum atmosphere; the plasma device is positioned in the vacuum cavity and is used for carrying out plasma treatment on the anti-reflection film of the mask base plate so as to form an oxide film on the surface of the anti-reflection film, and the plasma device is also provided with a radio frequency device which is used for activating inert gas into plasma; a photoresist coating device for coating a chemically amplified photoresist on the anti-reflective coating; and the power supply is used for providing power required by the operation of the gluing equipment.
Optionally, the hot plate is provided with a lifting supporting thimble.
Optionally, the mask blank also comprises a cold plate, wherein the cold plate is provided with a lifting bearing thimble for cooling the mask blank.
Optionally, the plasma device has a vacuum line, an inert gas line, and a reactive gas line.
As described above, the method for manufacturing a mask blank and the photoresist coating apparatus having the plasma heating device of the present invention have the following advantages:
the mask base plate can directly form an oxide film on an anti-reflective coating of a traditional structural substance, and can effectively avoid the neutralization reaction caused by the combination of electrons provided by an alkaline anti-reflective coating and quanta generated by illumination excitation of a chemical amplification type photoresist during exposure process treatment because the oxide film is formed at the interface of the anti-reflective coating and the chemical amplification type photoresist, and the oxide film plays a role of a barrier, and can form a photoresist pattern with an excellent pattern during exposure of the chemical amplification type photoresist, thereby forming a mask pattern with excellent resolution and realizing the manufacture of a photomask with high precision size.
Drawings
Fig. 1 is a schematic diagram showing a neutralization reaction between electrons generated in an alkali anti-reflective coating and quanta of the chemically amplified resist when the resist is coated on the alkali anti-reflective coating to form a resist pattern.
Fig. 2 is a schematic diagram showing formation of a resist pattern having a foot-shaped pattern by a reduction in solubility of a chemically amplified resist developer due to neutralization reaction of electrons generated by an alkaline anti-reflective film with quanta of the chemically amplified resist.
Fig. 3 to 4 are schematic structural views of a glue coating apparatus having a plasma heating device according to an embodiment of the present invention.
Fig. 5 to 12 are schematic structural views showing steps of a method for manufacturing a mask blank according to an embodiment of the invention.
Description of element reference numerals
10. Plasma device
101. Vacuum pipeline
102. Inert gas pipeline
103. Reaction gas pipeline
11. Hot plate
111. Bearing thimble
121. Radio frequency device
122. Power supply
13. Cold plate
131. Bearing thimble
201. Light-transmitting substrate
202. Light shielding film
203. Antireflection film
204. Oxide film
205. Chemically amplified photoresist
205a exposure portion
205b non-exposed portions
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 1, when the resist pattern is formed by coating the resist on the alkali anti-reflective coating, the electrons generated by the alkali anti-reflective coating are neutralized with the quanta of the chemically amplified resist, and thus the diffusion of quanta and the decomposition reaction of the resist are severely suppressed. At this time, since the solubility of the chemically amplified resist developer is lowered, a resist pattern having a foot pattern is formed as shown in fig. 2. If the photoresist pattern is patterned with a foot pattern, a defective pattern is formed when patterning the light shielding film and the anti-reflective film, and it is difficult to form an accurate pattern, thereby making it difficult to manufacture a photomask having a more precise critical dimension.
As shown in fig. 5 to 12, the present embodiment provides a method for manufacturing a mask blank, the method comprising the steps of:
as shown in fig. 5 to 6, step 1) is first performed to provide a light-transmitting substrate 201; a light shielding film 202 is deposited on the light-transmitting substrate 201.
The transparent substrate 201 comprises one of a quartz substrate, a soda lime substrate, a borosilicate substrate, an aluminum silicate substrate, a silicon substrate and a silicon carbide substrate, the radial dimension of the transparent substrate 201 is between 1 inch and 100 inches, and the thickness is between 0.1mm and 200 mm. For example, in the present embodiment, the light-transmitting substrate may be a quartz substrate, and its radial dimension may be 4 inches, 6 inches, 8 inches, 12 inches, etc., and its thickness may be 50mm, 80mm, 100mm, etc.
In this embodiment, a light shielding film 202 is deposited on the light-transmitting substrate 201 by a process such as magnetron sputtering, and optionally, the light shielding film 202 includes one of CrN and CrCN. Specifically, in this example, after the inert gases argon (Ar) 20 to 80SCCM (Standard Cubic Centimeter per Minute) and helium (He) 20 to 80SCCM were introduced, the reactive gas nitrogen (N) 2 ) 5-20 SCCM, and applying a specific Power (Power) by a direct current magnetron method, and sputtering by using a chromium plate target and Plasma (Plasma) of a process gas to form a chromium nitride (CrN) film having a thickness of 400-800A (a/m) as the light shielding film 202.
As shown in fig. 7, step 2) is then performed to deposit an antireflection film 203 on the light shielding film 202, the antireflection film 203 being an alkali oxide of Cr.
For example, an antireflection film 203 may be deposited on the light shielding film 202 by a process such as magnetron sputtering, and the antireflection film 203 may include one of CrON and CrCON. The surface roughness of the antireflection film 203 is between 0.01nm Ra and 0.5nm Ra.
Specifically, depositing the antireflection film 203 includes: in the inert gas introduction step, 5 to 50SCCM of argon and 5 to 50SCCM of helium are introduced, and in the reactive gas introduction step, nitrogen (N) is introduced 2 ) 50-80 SCCM, oxygen (O) 2 ) 1-5 SCCM, using DC magnetic control method and applying Power (Power), using chromium plate target material and Plasma (Plasma) of process gas to make sputtering, under the condition of pressure 0.1-0.5 Pa and Power 0.5-2W forming chromium oxynitride (CrON) film with thickness of 150-300A.
As shown in fig. 8, step 3) is performed to heat and bake the anti-reflection film 203 to remove the moisture of the anti-reflection film 203, and to perform oxygen plasma treatment on the surface of the anti-reflection film 203 to form an oxide film 204 on the surface of the anti-reflection film 203.
Specifically, the substrate on which the antireflection film 203 is sputtered is placed on a heating plate 11, and the antireflection film 203 is heated and baked at a temperature ranging from 150 ℃ to 250 DEG CThe heating time is in the range of 5 minutes to 20 minutes to remove the moisture from the antireflection film 203. Simultaneously using ICP type plasma reaction apparatus, releasing oxygen (O) at a pressure of 1-150 Pa 2 ) And carbon dioxide (CO) 2 ) A gas to form an oxide film 204 on the chromium oxynitride antireflection film 203. Specifically, the gas introduced to the surface of the antireflection film 203 by oxygen plasma treatment includes O 2 CO and CO 2 One or a mixture of both of them to form a CrO film on the surface of the anti-reflection film 203, wherein the time of the oxygen plasma treatment is between 5s and 60s, and the thickness of the oxide film 204 is between 1nm and 10 nm.
As shown in fig. 9 to 12, next, step 4) is performed to develop and expose the chemically amplified resist 205, and during the development and exposure, the oxide film 204 is used to inhibit the diffusion of electrons of the anti-reflective film 203 into the chemically amplified resist 205, so as to avoid a neutralization reaction at the interface between the chemically amplified resist 205 and the anti-reflective film 203.
First, as shown in fig. 9, a chemically amplified resist 205 is coated on the oxide film 204, and the chemically amplified resist 205 includes a Resin (Resin) soluble in alkali, a photoacid generator PAG (Photo Acid Generator), and a solvent.
Specifically, a chemically amplified resist 205, specifically, a chemically amplified resist 205 such as FEP-171 (fuji), is used on the oxide film 204. After forming a chemically amplified photoresist 205 with a thickness of 3000A by a spin-on coating method or a Capillary transport coating (Capillary) method, soft-baking the chemically amplified photoresist 205 at a temperature of 100-150 ℃ for 5-20 min.
Next, as shown in fig. 10 to 11, the chemically amplified resist 205 is exposed by an electron beam, and at this time, the resist is divided into an exposed portion 205a and a non-exposed portion 205b, and the exposed portion 205a generates a mediator quantum (h+) that promotes a chemical reaction, and the oxide film 204 formed on the surface of the anti-reflective film 203 can effectively suppress diffusion of electrons from the anti-reflective film 203, and suppress a neutralization reaction at the interface between the amplified resist and the anti-reflective film 203. The above process improves the solubility of the exposed portions 205a in the developer, leaving the non-exposed portions 205b of the photoresist pattern to form an excellent pattern morphology without pin defects, as shown in fig. 11.
As shown in fig. 12, step 5) is finally performed, using Cl in the dry etching apparatus 2 、O 2 The mixed gas of Ar and the oxide film 204, the antireflection film 203, and the light shielding film 202 are simultaneously etched on the substrate having the photoresist pattern, thereby forming a light shielding film pattern and an antireflection film pattern. Thereafter, the unwanted photoresist is removed to produce the final mask.
In the present invention, a dehydration baking (DHB) process for removing water from the surface of an antireflection film 203 containing an alkaline substance at the interface between the antireflection film 203 containing an alkaline substance and a chemically amplified resist 205 is performed and an oxygen (O) is added 2 ) Carbon dioxide (CO) 2 ) The surface treatment in the plasma is combined with the process of forming the oxide film 204 and is performed simultaneously or sequentially in the same chamber, so that on the one hand, the viscosity of the chemically amplified photoresist 205 and the anti-reflective film 203 can be increased, and on the other hand, the acid deactivation phenomenon between the anti-reflective film 203 and the chemically amplified photoresist 205 can be suppressed, thereby forming a high-precision photoresist pattern.
The oxide film 204 is formed on the anti-reflective film 203, so that the problem of foot-shaped defects generated at the interface between the chemically amplified photoresist 205 and the anti-reflective film 203 is effectively solved, and a high-quality photomask with excellent precise patterns can be effectively manufactured.
As shown in fig. 3 and 4, fig. 4 is a schematic cross-sectional structure of fig. 3, and the present embodiment further provides a photoresist coating apparatus with a plasma heating device, for implementing the method for manufacturing a mask blank as described above, where the photoresist coating apparatus includes: a hot plate 11 for carrying a mask blank and heating the mask blank to remove the moisture of the anti-reflective coating 203 and to provide a process temperature for a plasma treatment process and a baking process of the chemically amplified resist 205; a vacuum chamber for providing a reaction space and a vacuum atmosphere; a plasma device 10, wherein the plasma device 10 is positioned in the vacuum cavity and is used for performing plasma treatment on the anti-reflection film 203 of the mask base plate so as to form an oxide film 204 on the surface of the anti-reflection film 203, and the plasma device is also provided with a radio frequency device 121 for activating inert gas into plasma; a photoresist coating device (not shown) for coating the chemically amplified photoresist 205 on the anti-reflective film 203; and the power supply is used for providing power required by the operation of the gluing equipment.
In this embodiment, the hot plate 11 has a lifting supporting pin 111 to adjust the distance between the mask blank and the hot plate 11, so as to avoid damage caused by direct contact between the mask blank and the hot plate 11.
As shown in fig. 3, in this embodiment, the glue spreading apparatus further includes a cold plate 13, and the cold plate 13 has a lifting receiving thimble 131 for cooling the mask blank.
As shown in fig. 3, in the present embodiment, the plasma apparatus 10 has a vacuum line 101, an inert gas line 102, and a reactive gas line 103, wherein the vacuum line 101 is used for evacuating the vacuum chamber, the inert gas line 102 is used for inputting inert gases such as Ar, he, etc., and the reactive gas line 103 is used for inputting O 2 、CO 2 、N 2 And the like.
As shown in fig. 3, the power source 122 is specifically configured to provide power to the vacuum chamber to create a vacuum environment and to evacuate the chamber.
As described above, the method for manufacturing a mask blank and the photoresist coating apparatus having the plasma heating device of the present invention have the following advantages:
the mask base plate can directly form an oxide film on an anti-reflective coating of a traditional structural substance, and can effectively avoid the neutralization reaction caused by the combination of electrons provided by an alkaline anti-reflective coating and quanta generated by illumination excitation of a chemical amplification type photoresist during exposure process treatment because the oxide film is formed at the interface of the anti-reflective coating and the chemical amplification type photoresist, and the oxide film plays a role of a barrier, and can form a photoresist pattern with an excellent pattern during exposure of the chemical amplification type photoresist, thereby forming a mask pattern with excellent resolution and realizing the manufacture of a photomask with high precision size.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (9)
1. A method of making a mask blank, the method comprising the steps of:
providing a light-transmitting substrate;
depositing a shading film on the light-transmitting substrate;
depositing an antireflection film, which is an alkali oxide of Cr, on the light shielding film;
heating and baking the anti-reflection film to remove water of the anti-reflection film, and performing oxygen plasma treatment on the surface of the anti-reflection film to form an oxide film on the surface of the anti-reflection film;
coating chemical amplification type photoresist on the oxide film;
the oxide film is used for inhibiting the diffusion of electrons of the anti-reflective coating to the chemically amplified photoresist and avoiding the neutralization reaction at the interface of the chemically amplified photoresist and the anti-reflective coating.
2. The method for manufacturing a mask blank according to claim 1, wherein: the anti-reflection film is heated and baked at the temperature ranging from 150 ℃ to 250 ℃ for 5 minutes to 20 minutes so as to remove the moisture of the anti-reflection film.
3. The method for manufacturing a mask blank according to claim 1, wherein: the anti-reflection film comprises one of CrON and CrCON, and the gas introduced into the surface of the anti-reflection film by oxygen plasma treatment comprises O 2 CO and CO 2 One or two of the above gases are mixed to form a CrO film on the surface of the anti-reflection film, the time of the oxygen plasma treatment is between 5s and 60s, and the thickness of the formed oxide film is between 1nm and 10 nm.
4. The method for manufacturing a mask blank according to claim 1, wherein: the surface roughness of the anti-reflection film is between 0.01nm Ra and 0.5nm Ra.
5. The method for manufacturing a mask blank according to claim 1, wherein: the chemically amplified resist comprises a resin soluble in alkali, a photoacid generator and a solvent.
6. The method for manufacturing a mask blank according to claim 1, wherein: the shading film comprises one of CrN and CrCN.
7. The method for manufacturing a mask blank according to claim 1, wherein: the pressure of the oxygen plasma treatment on the surface of the anti-reflection film is 1 Pa-150 Pa.
8. The method for manufacturing a mask blank according to claim 1, wherein: the method for coating the chemical amplification type photoresist on the oxide film further comprises the step of soft drying the chemical amplification type photoresist, wherein the soft drying temperature is 100-150 ℃ and the time is 5-20 min.
9. The method for manufacturing a mask blank according to claim 1, wherein: the method further comprises the step of developing and exposing the chemically amplified photoresist, wherein in the developing and exposing process, the oxide film is used for inhibiting the diffusion of electrons of the anti-reflective coating to the chemically amplified photoresist, so as to avoid neutralization reaction at the interface of the chemically amplified photoresist and the anti-reflective coating.
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| JP2006078763A (en) * | 2004-09-09 | 2006-03-23 | Fujitsu Ltd | Method for manufacturing exposure mask |
| WO2007034930A1 (en) * | 2005-09-21 | 2007-03-29 | Dai Nippon Printing Co., Ltd. | Photomask having gradation sequence and method for manufacturing same |
| US7736822B2 (en) * | 2006-02-13 | 2010-06-15 | Hoya Corporation | Resist underlayer coating forming composition for mask blank, mask blank and mask |
| JP5294227B2 (en) * | 2006-09-15 | 2013-09-18 | Ｈｏｙａ株式会社 | Mask blank and transfer mask manufacturing method |
| JP5201813B2 (en) * | 2006-09-15 | 2013-06-05 | Ｈｏｙａ株式会社 | Mask blank and mask manufacturing method |
| WO2008139904A1 (en) * | 2007-04-27 | 2008-11-20 | Hoya Corporation | Photomask blank and photomask |
| JP5562835B2 (en) * | 2008-03-31 | 2014-07-30 | Ｈｏｙａ株式会社 | Photomask blank, photomask and photomask blank manufacturing method |
| TWI476507B (en) * | 2008-09-30 | 2015-03-11 | Hoya Corp | A mask substrate, a mask, a manufacturing method thereof, and a method of manufacturing the semiconductor element |
| JP5409298B2 (en) * | 2009-11-26 | 2014-02-05 | Ｈｏｙａ株式会社 | Mask blank, transfer mask, and manufacturing method thereof |
| US8435704B2 (en) * | 2010-03-30 | 2013-05-07 | Hoya Corporation | Mask blank, transfer mask, and methods of manufacturing the same |
| US8524421B2 (en) * | 2010-03-30 | 2013-09-03 | Hoya Corporation | Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device |
| JP5820555B2 (en) * | 2011-03-31 | 2015-11-24 | Hoya株式会社 | Manufacturing method of mask blank and phase shift mask |
| JP6084391B2 (en) * | 2011-09-28 | 2017-02-22 | Hoya株式会社 | Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method |
| CN110083008A (en) * | 2011-10-21 | 2019-08-02 | 大日本印刷株式会社 | The manufacturing method of large-scale phase shifting mask and large-scale phase shifting mask |
| JP5896402B2 (en) * | 2011-12-09 | 2016-03-30 | Hoya株式会社 | Mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method |
| JP5829302B2 (en) * | 2014-04-18 | 2015-12-09 | Hoya株式会社 | Photomask blank manufacturing method and photomask manufacturing method |
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