CN113296355A - Mask base plate and preparation method thereof and photomask - Google Patents
Mask base plate and preparation method thereof and photomask Download PDFInfo
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- CN113296355A CN113296355A CN202110550645.2A CN202110550645A CN113296355A CN 113296355 A CN113296355 A CN 113296355A CN 202110550645 A CN202110550645 A CN 202110550645A CN 113296355 A CN113296355 A CN 113296355A
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 31
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 239000001569 carbon dioxide Substances 0.000 claims description 23
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 239000001307 helium Substances 0.000 claims description 11
- 229910052734 helium Inorganic materials 0.000 claims description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 230000010363 phase shift Effects 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- 230000008569 process Effects 0.000 description 22
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 13
- 229910052804 chromium Inorganic materials 0.000 description 13
- 239000011651 chromium Substances 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 239000002585 base Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000005477 sputtering target Methods 0.000 description 12
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 150000001845 chromium compounds Chemical class 0.000 description 6
- 238000005546 reactive sputtering Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000006386 neutralization reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 3
- 239000002952 polymeric resin Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical group CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 235000011089 carbon dioxide Nutrition 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
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- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention provides a mask base plate, a preparation method thereof and a photomask. The mask template includes: a transparent substrate, a light shielding film, an antireflection film, and a photoresist layer, wherein an antireflection film oxide film is further provided between the reflection film and the photoresist layer; the photoresist layer is a chemically amplified photoresist. The preparation method of the mask base plate has the core that the anti-reflection film is directly oxidized to form the anti-reflection film oxide film. Through the mask base plate, a photomask is formed after exposure and etching.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing, and particularly relates to a mask base plate, a preparation method thereof and a photomask.
Background
Photolithography (Lithography) technology using a Photomask (Photomask) is required for forming a fine pattern on a semiconductor integrated circuit. In an environment that is increasingly considered to be economically maximized, any technology or process that can improve product stability or improve yield per unit time is necessarily fully utilized, which is fully proven by the application of the mask technology in the semiconductor technology. It is the advent of the photomask technology that has enabled semiconductors to achieve stable, fast, ultra-large scale production capabilities. Meanwhile, as the performance and the integration of semiconductor integrated circuits are increased and the requirements for higher precision are increased, the use of chemically amplified photoresist in the photomask is more and more extensive. However, the use of the chemically amplified resist makes it easy to form a photoresist pattern in a foot shape, and further makes it difficult to form a stable pattern on the light-shielding film and the antireflection film, and finally, there is always a defect in the pattern formed.
Disclosure of Invention
The present invention has been made in an intensive study for the cause of the occurrence of defects. The following are found: since the amplified resist contains an acidic substance, H is generated when the resist layer is irradiated with an electron beam or an excimer beam+Quantum, which causes neutralization reaction on the contact surface between the resist and the antireflection film, affects H+The quantum diffusion affects the solubility of the developer.
Referring to fig. 1 to 2, when an electron beam or light beam 14 is irradiated to a chemically amplified resist, a large amount of H is generated inside thereof+Quantum. The H+The quantum is used as a substance which can dissolve the developing solution by diffusion of the quantum and serving as a medium for initiating a decomposition reaction after being subjected to a Post Exposure Bake (Post Exposure Bake) process, and electrons (e-) and H are generated on the contact surface of the anti-reflection film and the photoresist layer+The quanta are neutralized, and the exposed portion 13a is dissolved by developing the exposed chemically amplified resist, and the remaining unexposed portion 13b forms a pattern 13 c. Refer to FIGS. 3-4 (& gt represents Quantum (H)+) Tangle-solidup represents an electron (e-)), and when a resist pattern is formed by applying a resist to the alkali anti-reflective coating of the chemically amplified resist, the electron generated in the alkali anti-reflective coating causes quantum neutralization 13d, thereby suppressing the diffusion and decomposition of the quantum. Accordingly, the solubility by the photoresist developer is decreased, thereby forming the footed photoresist pattern 13f having the footed 13 e. When the photoresist pattern is formed in a foot shape, it is difficult to form a stable pattern on the light-shielding film and the antireflection film, resulting in formation of a defective pattern. A photomask having a precise critical dimension cannot be manufactured using the photoresist pattern in a foot shape.
To this end, the present invention provides a mask blank comprising: the light-shielding film comprises a transparent substrate, a light-shielding film, an anti-reflection film and a photoresist layer, wherein an anti-reflection film oxide film is further arranged between the reflection film and the photoresist layer, and the photoresist layer is chemically amplified photoresist.
In the present invention, in order to clearly express the layer structure of the mask blank, expressions of the transparent substrate, the light-shielding film, the anti-reflection film, the photoresist layer, and the anti-reflection film oxide film are mainly adopted, and all expressions are recognizable and measurable layer structures, and are conventionally understood in the art.
According to the mask base plate provided by the invention, the anti-reflection film oxide film is arranged between the anti-reflection film and the photoresist, so that an effective isolation effect is achieved, and the neutralization reaction of partial region quantum and electrons between the anti-reflection film and the photoresist is avoided, so that when patterns are formed through exposure and development treatment, a foot-shaped photoresist pattern is not easy to generate, and the accuracy of a photomask is ensured. Besides, the method is used for oxidation operation, basically no excessive exogenous substances are introduced, the final performance of the product is controllable, and the process is simple and easy to implement.
In the mask base plate provided by the invention, the transparent substrate, the shading film, the anti-reflection film and the photoresist layer can adopt the conventional materials and specifications in the field, including components, length, thickness and the like, and the conventional stacking sequence. Meanwhile, the invention does not limit that other auxiliary films can be simply added between corresponding layers, and the core is that an anti-reflection film oxide film is adopted between the anti-reflection film and the photoresist layer for isolation; such isolation does not require that the anti-reflective coating oxide film and the photoresist layer must be in direct contact, and for example, an adhesive (hexamethyldisilazane or the like) may be applied between the anti-reflective coating oxide film and the photoresist layer to increase the adhesion between the photoresist and the substrate.
Preferably, a typical structure is: the light shielding film, the anti-reflection film oxide film and the photoresist layer are sequentially coated on the transparent substrate; this structure is of the BIM type (binary mask template). Another typical structure is: a phase shift reversal film, the light shielding film, the anti-reflection film oxide film and the photoresist layer are sequentially coated on the transparent substrate; this structure is of the PSM type (phase shift mask substrate).
In the mask base plate provided by the invention, the thickness of the anti-reflection film oxide film can be equal to
Such a film thickness can not only play a better isolation role, but also ensure light transmissionRate, etc.; of course, the film thickness can be properly adjusted according to different materials and different processes when in use. The more preferable thickness is selected from
In the mask master provided by the present invention, preferably, the transparent substrate is a quartz substrate. Preferably, the transparent substrate has a light transmittance of more than 85%.
In the mask base plate provided by the invention, preferably, the light shielding film is a chromium compound light shielding film; in a further preferred embodiment, the chromium compound light-shielding film may be composed of one or two of chromium nitride (CrN) and chromium oxycarbonitride (CrCN).
In the mask blank according to the present invention, the light-shielding film preferably has a thickness of
Further preferred is
The chromium nitride film of (1).
In the mask master provided by the present invention, preferably, the antireflection film is a chromium compound antireflection film; in a more preferred embodiment, the chromium compound antireflection film is a metal chromium compound antireflection film containing oxygen and nitrogen. In a more preferred embodiment, the component of the metal chromium compound antireflection film is one or more of chromium oxide (CrO), chromium oxynitride (CrON), and chromium oxycarbonitride (CrCON).
In the mask blank according to the present invention, the antireflection film preferably has a thickness of
Further preferred is
Chromium oxynitride film (CrON).
In the mask master provided by the present invention, it is preferable that the components of the chemically amplified resist include a polymer resin, a photoacid generator, a solvent, and an additive; the polymer resin is a polymer resin that can undergo alkaline dissolution.
The invention also provides a preparation method of the mask base plate, which comprises the following steps:
providing a transparent substrate;
depositing a light shielding film on the transparent substrate;
depositing an antireflection film on the light-shielding film;
forming an antireflection film oxide film on the antireflection film by oxidation;
and coating photoresist on the anti-reflection film oxide film to form a photoresist layer.
In the method for manufacturing a mask blank according to the present invention, it is preferable that the phase shift mask blank is manufactured by depositing a phase shift register film on a transparent substrate, and then sequentially coating a light shielding film, an anti-reflection film oxide film, a photoresist layer, etc. on the phase shift register film.
In the method for manufacturing a mask blank according to the present invention, preferably, when the antireflection film oxide film is manufactured, the antireflection film is formed by oxidizing the antireflection film with a liquid oxide or a gas oxide. Further preferably, the liquid oxidate comprises ozonated water and/or carbon dioxide water. More preferably, the gaseous oxide comprises any combination of two or more of argon, oxygen and carbon dioxide.
In the method for producing a mask blank according to the present invention, preferably, the antireflection film oxide film is produced by spraying oxygen-containing ozone water and carbon dioxide water on the surface of the antireflection film or by spraying ozone water and/or carbon dioxide water on the surface of the antireflection film in the case of using a liquid oxide for forming the oxide film. Further preferably, in the oxidation, carbon dioxide water (CO) is used2Water) is sprayed for 20-80 sec at a rate of 0.1-0.8 LPM; ozone water (O)3Water) is sprayed for 20-80 sec at a rate of 1-8 LPM (Water per minute).
The invention providesIn the method for manufacturing the mask substrate, preferably, the ozone water is introduced with carbonic acid gas (CO) and carbon dioxide (CO) in a discharge environment2) And oxygen (O)2) To produce ozone water. Preferably, carbonic acid gas (CO), carbon dioxide (CO) may be used2) And oxygen (O)2) To prepare carbon dioxide water.
In the method for manufacturing a mask blank according to the present invention, preferably, the antireflection film oxide film is manufactured, and when a gas oxide is used, the antireflection film may be placed in a high-temperature vacuum chamber, and argon (Ar) or oxygen (O) may be selected2) And carbon dioxide (CO)2) Any combination of two or more of them oxidizes the antireflection film.
In the preparation method of the mask base plate provided by the invention, the shading film and/or the anti-reflection film are/is prepared by a sputtering deposition process, and the process parameters can be carried out in a conventional mode. One preferred way is: in the sputtering deposition process, argon and helium are jointly used for bombarding a target (a film with better performance can be formed by using helium), and reaction gas is introduced to form the shading film and/or the anti-reflection film. Further preferably, in the production of the light-shielding film, the reaction gas used is nitrogen. More preferably, the reaction gas used in the preparation of the anti-reflection film is nitrogen dioxide or nitric oxide or a mixed gas thereof; in practice, since nitrogen dioxide or nitric oxide can be obtained by reacting oxygen and nitrogen, oxygen and nitrogen can be directly introduced into the reaction in a proper ratio. More preferably, when the light shielding film is formed, the injection parameter of the argon and/or helium is 20-80 SCCM (standard milliliter per minute); the injection parameter of the reaction gas nitrogen is 5-20 SCCM. More preferably, when the anti-reflection film is formed, the injection parameter of the argon and/or helium is 5-50 SCCM (standard milliliter per minute); the reaction gas adopts a mode of injecting nitrogen and oxygen, and the injection parameters are respectively as follows: nitrogen (N)2) 50-80 SCCM and oxygen (O)2)1～5SCCM。
In the preparation method of the mask base plate, preferably, when the shading film and/or the anti-reflection film is prepared by a sputtering deposition process, the process pressure of a sputtering cavity is 0.1-0.5 Pa, and the power is within the range of 0.5-2W.
In the method for preparing a mask substrate according to the present invention, preferably, the photoresist layer may be formed by spin coating or Capillary coating when the photoresist layer is formed.
The invention also provides a photomask manufactured by adopting the mask base plate, and the photomask is formed on the mask base plate by exposing and etching the photoresist layer.
Referring to fig. 5 to 6, in the conventional method for preparing a photomask using a mask substrate, wet etching using an etching solution or Cl is used2Dry etching with equal gas is carried out on the transparent substrate with the photoresist layer residual photoresist 13c, and the anti-reflection film pattern 12a and the shading film pattern 11a are formed after the anti-reflection film and the shading film are etched simultaneously; has obvious foot shape. The photomask provided by the invention can greatly reduce the defects.
Drawings
FIG. 1 is a schematic view of electron beam or light beam irradiation on the surface of a mask blank in a conventional method for manufacturing a photomask.
FIG. 2 is a schematic diagram showing the removal of photoresist in the exposed region after electron beam or light beam irradiation in the conventional method for manufacturing a photomask.
Fig. 3 is a schematic diagram illustrating a phenomenon in the conventional problem point exposure process.
FIG. 4 is a schematic diagram illustrating a photoresist footing phenomenon that is a problem in the prior art.
FIG. 5 is a schematic diagram showing a conventional method for removing the light-shielding film and the anti-reflection film in the exposed areas of the photomask after etching.
FIG. 6 is a schematic diagram illustrating a conventional method for removing residual photoresist after etching in a photomask.
Fig. 7 is a schematic view of a process of depositing a light shielding film on a transparent substrate according to an embodiment of the invention.
FIG. 8 is a schematic view of a process for depositing an antireflection film on a light-shielding film according to an embodiment of the present invention.
FIG. 9 is a schematic view of a process for forming an oxide film on the antireflection film by oxidation according to the embodiment of the present invention.
FIG. 10 is a schematic view of a process for applying a photoresist layer on an oxide film according to an embodiment of the present invention.
FIG. 11 is a schematic view of a process for irradiating the surface of the mask substrate with an electron beam or a light beam according to an embodiment of the present invention.
FIG. 12 is a schematic diagram of a process for removing a photoresist layer from exposed portions of a mask substrate after the mask substrate is irradiated with an electron beam or a light beam according to an embodiment of the present invention.
FIG. 13 is a schematic diagram illustrating a process of removing the antireflection film and the light shielding film in the exposed area after the mask substrate is irradiated with the electron beam or the light beam according to the embodiment of the present invention.
FIG. 14 is a schematic cross-sectional view of a mask fabricated by exposure and development according to an embodiment of the present invention.
Description of the element reference numerals
100 transparent substrate
101 light shielding film
102 anti-reflection film
103 anti-reflection film oxide film
104 photoresist
104a photoresist layer exposure region
104b photoresist layer non-exposure area
104c residual photoresist pattern of unexposed portions
105 electron or light beams
101a mask light-shielding film pattern
102a photomask anti-reflection film pattern
11a light shielding film pattern
12a anti-reflection film pattern
13a photoresist layer exposure region
13b non-exposed region of photoresist layer
13c photoresist layer residual photoresist
13d Quantum neutralization
13e foot shape
13f pinned resist pattern
30 mask base plate
40 light shield
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 10, the present embodiment provides a mask blank, including: the transparent substrate 100, the light shielding film 101, the anti-reflection film 102, and the photoresist 104, and the anti-reflection film oxide film 103 is further provided between the reflection film 102 and the photoresist 104, and the photoresist 104 is a chemically amplified photoresist.
The mask blank shown in fig. 10 is manufactured by the main steps of:
providing a transparent substrate 100; depositing a light shielding film 101 on a transparent substrate 100; depositing an antireflection film 102 on the light-shielding film 101; forming an antireflection film oxide film 103 by oxidation on the antireflection film 102; a photoresist layer is formed by coating a photoresist 104 on the antireflection film oxide film 103.
The specific process of manufacturing the mask blank shown in fig. 10 and the process of preparing a photomask from the mask blank will be described as follows:
example 1
Referring to fig. 7, in order to sputter the light shielding film 101 on the transparent substrate 100, the operation parameters of the present embodiment are: argon (Ar)20SCCM (Standard Cubic Centimeter per minute) and helium (He)20SCCM were injected into a gas inlet of a reactive sputtering apparatus, and nitrogen (N) was injected into a reactive gas inlet2)5 SCCM. Then, an equivalent volume (Plasma) bombarded at high pressure to the Sputtering Target (Sputtering Target) is formed to a thickness of
A chromium nitride (CrN) film of (2).
Referring to fig. 8, in order to sputter the antireflection film 102 on the light-shielding film (chromium nitride film), argon (Ar)5SCCM and helium (He)5SCCM were injected into the gas inlet of the reactive sputtering apparatus, and nitrogen (N) was injected into the reactive gas inlet2)50SCCM and oxygen (O)2)1 SCCM. Then, an equivalent volume (Plasma) bombarded at high pressure to the Sputtering Target (Sputtering Target) is formed to a thickness of
A chromium oxynitride (CrON) film.
At this time, the process pressure of the sputtering chamber was 0.1Pa, and the power was set to 0.5W.
Referring to FIG. 9, carbon dioxide and water (CO) are applied to a chromium oxynitride film2Water) was sprayed in an amount of 0.1LPM for 20sec, and then ozone Water (O) was supplied3Water) was sprayed for 20sec in an amount of 1LPM (Water per minute), and an oxide film in which the surface of the chromium oxynitride film was modified was formed. The anti-reflection film 102 is formed to a thickness of
The antireflection film oxide layer 103.
Example 2
Referring to fig. 7, in order to sputter the light shielding film 101 on the transparent substrate 100, the operation parameters of the present embodiment are: argon (Ar)50SCCM (Standard Cubic Centimeter per minute) and helium (He)50SCCM were injected into a gas inlet of a reactive sputtering apparatus, and nitrogen (N) was injected into a reactive gas inlet2)15 SCCM. Then, an equivalent volume (Plasma) bombarded at high pressure to the Sputtering Target (Sputtering Target) is formed to a thickness of
A chromium nitride (CrN) film of (2).
Referring to fig. 8, in order to sputter the antireflection film 102 on the light-shielding film (chromium nitride film), argon (Ar)30SCCM and helium (He)30SCCM were injected into the gas inlet of the reactive sputtering apparatus, and nitrogen (N) was injected into the reactive gas inlet2) 50-80 SCCM and oxygen (O)2)3 SCCM. Then, an equivalent volume (Plasma) bombarded at high pressure to the Sputtering Target (Sputtering Target) is formed to a thickness of
A chromium oxynitride (CrON) film.
At this time, the process pressure of the sputtering chamber was 0.3Pa, and the power was set to 1.5W.
Referring to FIG. 9, carbon dioxide and water (CO) are applied to a chromium oxynitride film2 Water) After spraying for 50sec at 0.5LPM, ozone water (O)3Water) is sprayed for 50sec in an amount of 1-8 LPM (Water per minute), and an oxide film with the surface of the chromium oxynitride film modified is formed. The anti-reflection film 102 is formed to a thickness of
The antireflection film oxide layer 103.
Example 3
Referring to fig. 7, in order to sputter the light shielding film 101 on the transparent substrate 100, the operation parameters of the present embodiment are: argon (Ar)80SCCM (Standard Cubic Centimeter per minute) and helium (He)80SCCM were injected into a gas inlet of a reactive sputtering apparatus, and nitrogen (N) gas was injected into a reactive gas inlet2)20 SCCM. Then, an equivalent volume (Plasma) bombarded at high pressure to the Sputtering Target (Sputtering Target) is formed to a thickness of
A chromium nitride (CrN) film of (2).
Referring to fig. 8, in order to sputter the antireflection film 102 on the light-shielding film (chromium nitride film), argon (Ar)50SCCM and helium (He)50SCCM were injected into the gas inlet of the reactive sputtering apparatus, and nitrogen (N) was injected into the reactive gas inlet2)80SCCM and oxygen (O)2)5 SCCM. Then, an equivalent volume (Plasma) bombarded at high pressure to the Sputtering Target (Sputtering Target) is formed to a thickness of
A chromium oxynitride (CrON) film.
The process pressure of the sputtering chamber is 0.5Pa, and the power is in the range of 2W.
Referring to FIG. 9, carbon dioxide and water (CO) are applied to a chromium oxynitride film2Water) is sprayed for 20-80 sec at a rate of 0.8LPM, and then ozone Water (O) is sprayed3Water) was sprayed for 80sec in an amount of 8LPM (Water per minute), and an oxide film in which the surface of the chromium oxynitride film was modified was formed. The anti-reflection film 102 is formed to a thickness of
The antireflection film oxide layer 103.
Referring to FIG. 10, FEP-171 (Fuji) is spin-coated on the oxide film to a thickness of
Then baked at a high temperature of 120 c for 20min by a Hot Plate (Hot Plate), and the mask substrate 30 of the oxide film on the antireflection film is manufactured by the above-mentioned process.
Referring to fig. 11, an electron beam or a light beam 105 is irradiated onto an anti-reflection mask substrate having an oxide film formed thereon to expose a chemically amplified photoresist. At this time, the photoresist is divided into the photoresist layer exposure region 104a and the photoresist layer non-exposure region 104 b. The exposed part generates quantum (H)+) The oxide film formed on the surface of the anti-reflection film serves to suppress electron supply as a medium for promoting a chemical reaction, and also suppresses a neutralization reaction between the photoresist and the surface of the anti-reflection film.
As a result, referring to FIG. 12, the mask blanks of examples 1-3 showed an increase in the solubility of the developer in the exposed portions during the subsequent development process, while the remaining photoresist pattern 104c in the unexposed portions formed a good pattern without footing.
Referring to fig. 13, a mask blank having a photoresist pattern is formed using Cl in a dry etching apparatus2、O2And the mixed gas of Ar etches the oxide film, the anti-reflection film and the light-shielding film at the same time to form a mask light-shielding film pattern 101a and a mask anti-reflection film pattern 102 a.
Referring to fig. 14, by removing unnecessary photoresist patterns, a desired reticle 40 is manufactured.
In the mask blank manufactured by the example of the present invention, electrons generated from the alkali anti-reflection film cannot react with quantum formation generated from the photosensitive layer in the exposure process due to the oxide film formed at the interface between the anti-reflection film and the photoresist. The oxide film functions as a Barrier (Barrier), and a photoresist pattern having an excellent pattern can be formed.
Therefore, the present invention provides an embodiment that can form an oxide film on an antireflection film of a conventional structural material without replacing the antireflection film of a mask substrate with a new structural material, and can form a resist pattern having an excellent pattern when exposing a chemically amplified resist, thereby manufacturing a photomask having a high-precision dimension.
Claims (11)
1. A mask blank, comprising: the light-shielding film comprises a transparent substrate, a light-shielding film, an anti-reflection film and a photoresist layer, wherein an anti-reflection film oxide film is arranged between the reflection film and the photoresist layer; the photoresist layer is a chemically amplified photoresist.
2. The mask template according to claim 1, wherein the antireflection film oxide film has a thickness of
3. The mask template according to claim 1, wherein the antireflection film oxide film has a thickness of
4. The mask template of claim 1, wherein the composition of the light-shielding film is selected from CrN and/or CrCN.
5. The mask template of claim 1, wherein the antireflective film comprises a composition selected from one or more of CrO, CrON, and CrCON.
6. The mask blank according to any one of claims 1 to 5, wherein the light-shielding film, the antireflection film oxide film and the photoresist layer are coated on the transparent substrate in this order.
7. The mask template according to any of claims 1 to 5, wherein a phase shift reversal film, the light shielding film, the antireflection film oxide film and the photoresist layer are coated on the transparent substrate in this order.
8. A method of preparing a mask blank according to any one of claims 1 to 6, the method comprising:
providing a transparent substrate;
depositing a light shielding film on the transparent substrate;
depositing an antireflection film on the light-shielding film;
forming an antireflection film oxide film on the antireflection film by oxidation;
and coating photoresist on the anti-reflection film oxide film to form a photoresist layer.
9. The method of producing a mask blank according to claim 8, wherein the antireflection film oxide film is formed by oxidizing the antireflection film with a liquid oxide or a gas oxide;
the liquid oxide comprises ozone water and/or carbon dioxide water;
the gaseous oxide comprises any combination of two or more of argon, oxygen, and carbon dioxide.
10. The method of claim 8, wherein the light-shielding film and/or the anti-reflection film is formed by a sputtering deposition process in which a target is bombarded with argon gas and helium gas together, and a reaction gas is introduced to form the light-shielding film and/or the anti-reflection film.
11. A photomask produced using the mask blank according to any one of claims 1 to 7, which is formed on the mask blank by exposing and etching the photoresist layer.
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| CN202110550645.2A CN113296355A (en) | 2021-05-17 | 2021-05-17 | Mask base plate and preparation method thereof and photomask |
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| CN103345130A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Photoresist reworking etching process |
| US20130273738A1 (en) * | 2010-12-24 | 2013-10-17 | Hoya Corporation | Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same |
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| US6794279B1 (en) * | 2000-05-23 | 2004-09-21 | Advanced Micro Devices, Inc. | Passivating inorganic bottom anti-reflective coating (BARC) using rapid thermal anneal (RTA) with oxidizing gas |
| US20040058515A1 (en) * | 2002-08-07 | 2004-03-25 | Kwon Young-Min | Semiconductor device and a fabrication method thereof |
| KR20080045586A (en) * | 2006-11-20 | 2008-05-23 | 주식회사 에스앤에스텍 | Process of blankmask or photomask with low-reflectance |
| KR20100106853A (en) * | 2009-03-24 | 2010-10-04 | 주식회사 에스앤에스텍 | Blank mask and manufacture method thereof |
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