TWI502623B - Method of manufacturing a photomask, photomask, and method of manufacturing a display device - Google Patents
Method of manufacturing a photomask, photomask, and method of manufacturing a display device Download PDFInfo
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- TWI502623B TWI502623B TW099146691A TW99146691A TWI502623B TW I502623 B TWI502623 B TW I502623B TW 099146691 A TW099146691 A TW 099146691A TW 99146691 A TW99146691 A TW 99146691A TW I502623 B TWI502623 B TW I502623B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本發明係關於一種光罩之製造方法、光罩、及顯示裝置之製造方法。The present invention relates to a method of manufacturing a photomask, a photomask, and a method of manufacturing the display device.
使用曝光機於基板等上形成圖案時，伴隨基板之變形而修正描繪資料之技術已為人所知。例如，當曝光對象之基板因熱處理或積層而產生變形時，會對應基板之變形而進行描繪資料之修正(參照日本專利特開平9-15834號公報)。When a pattern is formed on a substrate or the like using an exposure machine, a technique for correcting drawing data in association with deformation of the substrate is known. For example, when the substrate to be exposed is deformed by heat treatment or lamination, the drawing data is corrected in accordance with the deformation of the substrate (refer to Japanese Laid-Open Patent Publication No. Hei 9-15834).
於製造FPD(flat panel display，平板顯示器)等顯示裝置時會進行曝光步驟，其係藉由曝光機將光罩具備之轉印用圖案轉印至被轉印體上。然而，用於製造FPD等顯示裝置之光罩較為大型，故將其設置於曝光機上時易產生撓曲，且有時會因該撓曲而導致轉印用圖案扭曲地轉印至被轉印體上。又，有是因曝光機所具備之成像光學系統之誤差等，亦會導致產生上述形變。特別係於使用近接方式之曝光機之情形時，由於曝光機所具備之光學系統之誤差、及由光罩設置時之固定方法或重力影響所產生之光罩變形或撓曲之影響，經轉印之圖案有時易產生誤差。When a display device such as an FPD (flat panel display) is manufactured, an exposure step is performed in which the transfer pattern provided in the photomask is transferred onto the transfer target by an exposure machine. However, since the photomask for manufacturing a display device such as an FPD is relatively large, it is liable to be deflected when it is placed on the exposure machine, and the transfer pattern may be transferred to be transferred by twisting due to the deflection. On the print. Further, there is a problem such as an error in the imaging optical system provided in the exposure machine, which may cause the above-described deformation. In particular, in the case of using a proximity type exposure machine, due to the error of the optical system of the exposure machine, and the influence of the deformation or deflection of the reticle caused by the fixing method of the reticle or the influence of gravity, the rotation Printed patterns are sometimes prone to errors.
為提高形成於被轉印體上之圖案(以下，亦稱為轉印圖案)之座標精度，可使上述形變預先反映於描繪資料而形成修正描繪資料，並根據該修正描繪資料而於光罩上描繪轉印用圖案。藉此，可抵消由於使用該光罩進行曝光時產生之光罩之撓曲或曝光裝置之光學系統所導致的形變，其結果為可提高轉印圖案之座標精度。In order to improve the coordinate accuracy of the pattern formed on the transfer target (hereinafter also referred to as a transfer pattern), the deformation can be reflected in the drawing material in advance to form the corrected drawing material, and the mask can be formed on the mask according to the correction. The transfer pattern is drawn on. Thereby, the distortion caused by the deflection of the reticle or the optical system of the exposure apparatus which is generated when the reticle is used for exposure can be offset, and as a result, the coordinate accuracy of the transfer pattern can be improved.
對轉印用圖案資料實施形變修正而進行描繪之描繪步驟可採用圖1所例示之方法進行。於該描繪步驟中，首先，如圖1(a)所示，準備描繪用資料(S101)。圖1(b)表示描繪用資料之構成例。於圖1(b)中，以+字符號表示轉印用圖案。繼而，準備於透明基板上依序形成有薄膜及光阻膜之遮罩基底，開始進行對光阻膜之轉印用圖案之描繪(S102)。具體而言，首先，相對於設定有未實施形變修正之標準座標系(正方格子)之描繪機，進行特定之描繪用形變修正參數之展開，藉此取得修正座標系(S103)，並將所取得之修正座標系設定於描繪機中。將標準座標系、描繪用形變修正參數、及修正座標系分別例示於圖1(c)、(d)、(e)。然後，使用所取得之修正座標系對上述光阻膜進行轉印用圖案之形成預定區域之描繪(S104)。將描繪結果例示於圖1(f)。由於使用修正座標系，故圖1(f)中例示之描繪結果成為相對於圖1(b)中例示之描繪用資料實施特定之形變修正後的構成。如此，只要使用對描繪機之標準座標系實施形變修正後所得之修正座標系，則可藉由描繪而對轉印用圖案實施形變修正。The drawing step of performing the deformation correction on the transfer pattern data can be carried out by the method illustrated in Fig. 1 . In the drawing step, first, as shown in FIG. 1(a), the drawing material is prepared (S101). Fig. 1(b) shows an example of the configuration of the data for drawing. In Fig. 1(b), the transfer pattern is indicated by a + character number. Then, a mask substrate on which a thin film and a photoresist film are sequentially formed on the transparent substrate is prepared, and drawing of the transfer pattern for the photoresist film is started (S102). Specifically, first, a specific drawing coordinate system (square square) in which a distortion correction is not performed is used to develop a specific distortion correction parameter for drawing, thereby obtaining a correction coordinate system (S103). The corrected coordinates obtained are set in the drawing machine. The standard coordinate system, the distortion correction parameter for drawing, and the correction coordinate system are respectively illustrated in FIGS. 1(c), (d), and (e). Then, using the obtained correction coordinate system, the photoresist film is subjected to drawing of a predetermined region for forming a transfer pattern (S104). The result of the drawing is illustrated in Fig. 1(f). Since the modified coordinate system is used, the result of the drawing illustrated in FIG. 1(f) is a configuration in which specific distortion correction is performed with respect to the drawing material illustrated in FIG. 1(b). In this manner, if the correction coordinate system obtained by performing the distortion correction on the standard coordinate system of the drawing machine is used, the transfer pattern can be deformed by drawing.
然而，根據發明者等人之認真研討後可知，上述方法雖可適用於使用在基板上形成一層薄膜之光罩基底即所謂之二元光罩的製造，但難以適用於具備使形成於基板上之複數個薄膜分別圖案化而成之轉印用圖案之多階調光罩的製造。However, according to the intensive study by the inventors and the like, the above method can be applied to the manufacture of a so-called binary mask using a mask substrate which forms a thin film on a substrate, but it is difficult to apply to the substrate. The manufacture of a multi-step dimming cover for a transfer pattern in which a plurality of thin films are respectively patterned.
於製造多階調光罩時係實施第1圖案化步驟及第2圖案化步驟，該第1圖案化步驟係對形成於透明基板上之第1薄膜實施光微影步驟而形成第1主圖案，該第2圖案化步驟係對形成於透明基板上之第2薄膜實施光微影步驟而形成第2圖案。此處，為使第1主圖案與第2圖案準確疊合，而使用規定描繪之基準位置之對準標記。When manufacturing the multi-step dimming cover, the first patterning step and the second patterning step are performed, and the first patterning step is performed by performing a photolithography step on the first film formed on the transparent substrate to form the first main pattern. In the second patterning step, a photolithography step is performed on the second film formed on the transparent substrate to form a second pattern. Here, in order to accurately overlap the first main pattern and the second pattern, an alignment mark of a reference position of a predetermined drawing is used.
將使用對準標記進行圖案疊合之描繪步驟例示於圖2。分別為圖2(a)表示於上述第1圖案化步驟中執行之第1描繪步驟，圖2(b)表示於上述第2圖案化步驟中執行之第2描繪步驟。A drawing step of pattern overlapping using an alignment mark is exemplified in FIG. 2(a) shows a first drawing step executed in the first patterning step, and FIG. 2(b) shows a second drawing step executed in the second patterning step.
首先，準備第1層之描繪用資料(圖2(c))(S201)。於圖2(c)中，對準標記資料係以■符號表示，第1主圖案資料係以+字符號表示。繼而，準備於透明基板上依序積層有第2薄膜及第1薄膜並於第1薄膜上形成有第1光阻膜之遮罩基底，開始進行對第1光阻膜之描繪(S202)。具體而言，首先，說明使用設定有未實施形變修正之標準座標系(圖2(d)所示之正方格子)之描繪機之情形。使用該標準座標系而對第1光阻膜進行對準標記及第1主圖案之形成預定區域之描繪(S202)。將描繪結果例示於圖2(e)。繼而，對第1光阻膜進行顯影而形成第1光阻圖案，並實施將第1光阻圖案作為遮罩而蝕刻第1薄膜之露出部分，形成對準標記及第1主圖案並去除第1光阻圖案之一系列處理後，形成第2光阻膜(S202')。First, the material for drawing of the first layer is prepared (Fig. 2(c)) (S201). In Fig. 2(c), the alignment mark data is indicated by the ■ symbol, and the first main pattern data is indicated by the + character number. Then, a second film and a first film are sequentially laminated on the transparent substrate, and a mask base of the first photoresist film is formed on the first film, and the first photoresist film is started to be drawn (S202). Specifically, first, a case where a drawing machine in which a standard coordinate system (square square shown in FIG. 2(d)) in which distortion correction is not performed is used will be described. The alignment mark of the first photoresist film and the formation of a predetermined region of the first main pattern are drawn using the standard coordinate system (S202). The result of the drawing is illustrated in Fig. 2(e). Then, the first photoresist film is developed to form a first photoresist pattern, and the exposed portion of the first film is etched by using the first photoresist pattern as a mask, and the alignment mark and the first main pattern are formed and removed. After one series of one photoresist pattern is processed, a second photoresist film is formed (S202').
繼而，準備第2層之描繪用資料(圖2(g))(S203)。於圖2(g)中，第2圖案資料係以×字符號表示。再者，將規定第2圖案資料之配置之對準標記資料的配置例示於圖2(f)。接著，開始進行對第2光阻膜之描繪(S204)。首先，使用設定有標準座標系(圖2(h))之描繪機並參照對準標記(S205)，取得第1層資訊(對準標記之位置)。將所取得之第1層資訊例示於圖2(i)。然後，根據所取得之第1層資訊而決定對第2光阻膜進行描繪(第2層描繪)之描繪開始位置及描繪方向。亦可根據需要、或根據描繪機之功能，實施第2層描繪之正交度或倍率調整(S206)。然後，使用標準座標系，對上述第2光阻膜進行第2圖案之形成預定區域之描繪(S207)。將描繪結果例示於圖2(j)。Then, the second layer drawing data (Fig. 2(g)) is prepared (S203). In Fig. 2(g), the second pattern data is represented by an x character number. Further, an arrangement example of the alignment mark data for defining the arrangement of the second pattern data is shown in Fig. 2(f). Next, the drawing of the second resist film is started (S204). First, the first layer information (the position of the alignment mark) is obtained by using the drawing machine set with the standard coordinate system (Fig. 2(h)) and referring to the alignment mark (S205). The obtained first layer information is exemplified in Fig. 2(i). Then, based on the acquired first layer information, the drawing start position and the drawing direction of the second resist film (the second layer drawing) are determined. The orthogonality or magnification adjustment of the second layer drawing may be performed as needed or according to the function of the drawing device (S206). Then, the second resist film is subjected to drawing of a predetermined region for forming the second pattern using a standard coordinate system (S207). The result of the drawing is illustrated in Fig. 2(j).
如此，於第1圖案化步驟中形成對準標記與第1主圖案，於第2圖案化步驟中，讀出所形成之對準標記並規定基準位置而形成第2圖案，藉此可提高第1主圖案與第2圖案之疊合精度。In this manner, the alignment mark and the first main pattern are formed in the first patterning step, and in the second patterning step, the formed alignment mark is read and the reference position is defined to form the second pattern, thereby improving the number 1 The superposition accuracy of the main pattern and the second pattern.
此處，考慮如下情形：預先考慮於光罩曝光階段產生之光罩之撓曲、或曝光機固有之形變，而對描繪資料實施修正。為對第1主圖案或第2圖案實施特定之形變修正，有必要使用對描繪機之標準座標系實施形變修正後所取得之修正座標系分別進行描繪。然而，使用修正座標系實施第1描繪步驟時，不僅係對第1主圖案實施形變修正，且對準標記之位置亦會隨之而變動。其結果為，於第2描繪步驟中對準標記並未處於可讀出之位置，變得無法讀取對準標記，或者發生識別錯誤。而且，第1主圖案與第2圖案之疊合精度變得不充分。此係發明者等人經銳意研究後所明確之課題。Here, a case is considered in which the correction of the drawing data is performed in advance in consideration of the deflection of the reticle generated in the reticle exposure stage or the deformation inherent to the exposure machine. In order to perform specific distortion correction on the first main pattern or the second pattern, it is necessary to draw the correction coordinate system obtained by performing the distortion correction on the standard coordinate system of the drawing machine. However, when the first drawing step is performed using the modified coordinate system, not only the deformation correction of the first main pattern but also the position of the alignment mark may be changed. As a result, in the second drawing step, the alignment mark is not at the readable position, the alignment mark cannot be read, or an identification error occurs. Further, the accuracy of superimposing the first main pattern and the second pattern is insufficient. This is a subject that is invented by inventors and others after careful research.
本發明之目的在於：具備使複數個薄膜分別圖案化而成之轉印用圖案之光罩中，對各薄膜分別實施形變修正並形成圖案，且使該等圖案準確地疊合。An object of the present invention is to provide a mask for a transfer pattern in which a plurality of thin films are patterned, and to deform and form a pattern for each of the thin films, and to superimpose the patterns accurately.
本發明之第1態樣係一種光罩之製造方法，該光罩具備透明基板、及由形成於上述透明基板上且已分別圖案化之複數個薄膜所構成之特定之轉印用圖案，該製造方法包括：第1圖案化步驟，其係對形成於上述透明基板上之第1薄膜實施光微影步驟而形成第1圖案；及第2圖案化步驟，其係對形成於上述透明基板上之第2薄膜實施光微影步驟而形成第2圖案；分別為上述第1圖案化步驟包含第1描繪步驟，上述第2圖案化步驟包含第2描繪步驟，且於上述第1描繪步驟及第2描繪步驟中，包含使用實施相同形變修正後之修正座標系而進行之描繪。According to a first aspect of the present invention, in a method of manufacturing a photomask, the photomask includes a transparent substrate and a specific transfer pattern formed of a plurality of thin films formed on the transparent substrate and patterned separately. The manufacturing method includes a first patterning step of performing a photolithography step on a first thin film formed on the transparent substrate to form a first pattern, and a second patterning step of forming on the transparent substrate The second film is subjected to a photolithography step to form a second pattern; wherein the first patterning step includes a first drawing step, and the second patterning step includes a second drawing step, and the first drawing step and the first drawing step (2) The drawing step includes drawing using a modified coordinate system that performs the same distortion correction.
本發明之第2態樣係一種光罩之製造方法，該光罩具備透明基板、及由形成於上述透明基板上且已分別圖案化之複數個薄膜所構成之特定之轉印用圖案，該製造方法包括：第1圖案化步驟，其係對形成於上述透明基板上之第1薄膜實施光微影步驟而形成包含對準標記與第1主圖案之第1圖案；及第2圖案化步驟，其係對形成於上述透明基板上之第2薄膜實施光微影步驟，參照上述對準標記而形成第2圖案；上述對準標記之形成、及上述對準標記之參照分別係根據相同之座標系而進行，上述第1圖案之形成、及上述第2圖案之形成分別係根據對上述座標系實施相同形變修正後之修正座標系而進行。According to a second aspect of the present invention, in a method of manufacturing a photomask, the photomask includes a transparent substrate and a specific transfer pattern formed of a plurality of thin films formed on the transparent substrate and patterned separately. The manufacturing method includes a first patterning step of performing a photolithography step on a first thin film formed on the transparent substrate to form a first pattern including an alignment mark and a first main pattern, and a second patterning step And performing a photolithography step on the second thin film formed on the transparent substrate, and forming a second pattern by referring to the alignment mark; the formation of the alignment mark and the reference of the alignment mark are respectively based on the same The coordinate system is performed, and the formation of the first pattern and the formation of the second pattern are performed according to the correction coordinate system in which the coordinate system is corrected by the same distortion.
本發明之第3態樣係一種光罩之製造方法，該光罩具備透明基板、及由形成於上述透明基板上且已分別圖案化之複數個薄膜所構成之特定之轉印用圖案，該製造方法包括：第1圖案化步驟，其係對形成於上述透明基板上之第1薄膜實施光微影步驟而形成包含對準標記與第1主圖案之第1圖案；及第2圖案化步驟，其係對形成於上述透明基板上之第2薄膜實施光微影步驟而形成第2圖案；上述第1圖案化步驟包含第1描繪步驟，其係藉由描繪機並使用包含對準標記資料與第1主圖案資料之第1圖案資料而描繪第1圖案，於上述第1描繪步驟中，使用上述對準標記資料及未實施形變修正之標準座標系而描繪上述對準標記，並使用上述第1主圖案資料及實施形變修正後之修正座標系而描繪上述第1主圖案，上述第2圖案化步驟包含第2描繪步驟，其係藉由上述描繪機，使用第2圖案資料而描繪上述第2圖案，於上述第2描繪步驟中，使用上述標準座標系並參照上述對準標記，使用上述第2圖案資料及上述修正座標系而描繪上述第2圖案。According to a third aspect of the present invention, in a method of manufacturing a photomask, the photomask includes a transparent substrate and a specific transfer pattern formed of a plurality of thin films respectively formed on the transparent substrate and patterned. The manufacturing method includes a first patterning step of performing a photolithography step on a first thin film formed on the transparent substrate to form a first pattern including an alignment mark and a first main pattern, and a second patterning step And performing a photolithography step on the second thin film formed on the transparent substrate to form a second pattern; the first patterning step includes a first drawing step by using a drawing device and using an alignment mark data The first pattern is drawn with the first pattern data of the first main pattern data, and in the first drawing step, the alignment mark is drawn using the alignment mark data and the standard coordinate system in which the distortion correction is not performed, and the above-described alignment mark is used. The first main pattern data and the modified coordinate system after the deformation correction are performed to draw the first main pattern, and the second patterning step includes a second drawing step of using the second pattern by the drawing device In the second drawing step, the second pattern is drawn by using the standard coordinate system and referring to the alignment mark, and the second pattern is drawn using the second pattern data and the modified coordinate system.
本發明之第4態樣係一種光罩之製造方法，該光罩具備透明基板、及由形成於上述透明基板上且已分別圖案化之複數個薄膜所構成之特定之轉印用圖案，該製造方法包括：第1圖案化步驟，其係對形成於上述透明基板上之第1薄膜實施光微影步驟而形成包含對準標記與第1主圖案之第1圖案；及第2圖案化步驟，其係對形成於上述透明基板上之第2薄膜實施光微影步驟而形成第2圖案；上述第1圖案化步驟包含第1描繪步驟，其係藉由描繪機並使用包含對準標記資料與第1主圖案資料之第1圖案資料而描繪第1圖案，於上述第1描繪步驟中，使用上述對準標記資料及實施形變修正後之修正座標系而描繪對準標記，並使用上述第1主圖案資料及上述修正座標系而描繪第1主圖案，上述第2圖案化步驟包含第2描繪步驟，其係藉由上述描繪機，使用第2圖案資料而描繪上述第2圖案，於上述第2描繪步驟中，使用上述修正座標系並參照上述對準標記，使用上述第2圖案資料及上述修正座標系而描繪上述第2圖案。According to a fourth aspect of the present invention, in a method of manufacturing a photomask, the photomask includes a transparent substrate and a specific transfer pattern formed of a plurality of thin films formed on the transparent substrate and patterned separately. The manufacturing method includes a first patterning step of performing a photolithography step on a first thin film formed on the transparent substrate to form a first pattern including an alignment mark and a first main pattern, and a second patterning step And performing a photolithography step on the second thin film formed on the transparent substrate to form a second pattern; the first patterning step includes a first drawing step by using a drawing device and using an alignment mark data And drawing the first pattern with the first pattern data of the first main pattern data, and in the first drawing step, drawing the alignment mark using the alignment mark data and the correction coordinate system after performing the distortion correction, and using the above-described The first main pattern and the modified coordinate system are used to draw the first main pattern, and the second patterning step includes a second drawing step of drawing the second image by using the second pattern data by the drawing device. , To the second drawing step, the correction reference coordinate system and the alignment mark, while drawing the second pattern using the second pattern information and the correction coordinates.
本發明之第5態樣係如第1至第4態樣中任一態樣之光罩之製造方法，其中上述第1薄膜及上述第2薄膜中之一方係遮光膜，另一方係半透光膜，準備於上述透明基板上依序積層上述第2薄膜及上述第1薄膜所得之光罩基底，對該光罩基底實施上述第1圖案化步驟及上述第2圖案化步驟。According to a fifth aspect of the invention, in the method of manufacturing the reticle according to any one of the first aspect to the fourth aspect, the one of the first film and the second film is a light-shielding film, and the other is semi-transparent. The light film is prepared by sequentially laminating the second film and the first film obtained on the transparent substrate, and performing the first patterning step and the second patterning step on the mask substrate.
本發明之第6態樣係如第1至第4態樣中任一態樣之光罩之製造方法，其中上述第1薄膜及上述第2薄膜中之一方係遮光膜，另一方係半透光膜，準備於上述透明基板上依序積層上述第1薄膜及上述第2薄膜所得之光罩基底，對該光罩基底實施上述第1圖案化步驟及上述第2圖案化步驟。According to a sixth aspect of the invention, in the method of manufacturing the reticle according to any one of the first aspect to the fourth aspect, the one of the first film and the second film is a light-shielding film, and the other is semi-transparent. The light film is prepared by sequentially laminating the first film and the second film obtained on the transparent substrate, and performing the first patterning step and the second patterning step on the mask substrate.
本發明之第7態樣係如第1至第4態樣中任一態樣之光罩之製造方法，其中上述第1薄膜及上述第2薄膜中之一方係遮光膜，另一方係半透光膜，對形成於上述透明基板上之第1薄膜實施第1圖案化步驟之後，於形成有上述第1圖案之透明基板上形成第2薄膜，並至少對上述第2薄膜實施上述第2圖案化步驟。According to a seventh aspect of the invention, in the method of manufacturing the reticle according to any one of the first aspect to the fourth aspect, the one of the first film and the second film is a light-shielding film, and the other is semi-transparent. After the first patterning step is performed on the first film formed on the transparent substrate, the second film is formed on the transparent substrate on which the first pattern is formed, and the second pattern is applied to at least the second film. Steps.
本發明之第8態樣係如第3至第4態樣之光罩之製造方法，其中準備具有藉由上述描繪機描繪特定之測試圖案資料所得之測試圖案的測試遮罩，並進行使用曝光裝置將上述測試圖案轉印至被轉印體上而形成轉印測試圖案之轉印測試，使用將上述轉印測試圖案與上述測試圖案資料加以比較後所得之形變資料而取得上述修正座標系。An eighth aspect of the present invention is the method of manufacturing a photomask according to the third to fourth aspects, wherein a test mask having a test pattern obtained by drawing a specific test pattern data by the above-described drawing machine is prepared, and exposure is performed. The apparatus transfers the test pattern onto the transfer target to form a transfer test pattern, and obtains the modified coordinate system by using the deformation data obtained by comparing the transfer test pattern with the test pattern data.
本發明之第9態樣係如第1至第4態樣中任一態樣之光罩之製造方法，其中上述光罩係具有遮光部、透光部、及半透光部之多階調光罩。The ninth aspect of the invention is the method of manufacturing the reticle according to any one of the first aspect to the fourth aspect, wherein the reticle has a multi-tone tone of the light shielding portion, the light transmission portion, and the semi-light transmission portion Photomask.
本發明之第10態樣係一種光罩，其包括：第1主圖案，其係使形成於透明基板上之第1薄膜圖案化而成；第2圖案，其係使形成於上述透明基板上之第2薄膜圖案化而成；及特定之轉印用圖案，其含有使上述第1薄膜圖案化而成之對準標記；上述第1主圖案及上述第2圖案係藉由描繪機並使用實施相同形變修正後之修正座標系而進行描繪。A tenth aspect of the invention is a photomask comprising: a first main pattern formed by patterning a first thin film formed on a transparent substrate; and a second pattern formed on the transparent substrate The second thin film is patterned; and the specific transfer pattern includes an alignment mark formed by patterning the first thin film; and the first main pattern and the second pattern are used by a drawing device The modified coordinate system after the same deformation correction is performed and depicted.
本發明之第11態樣係如第10態樣之光罩，其中上述對準標記係藉由上述描繪機並使用未實施形變修正之座標系而進行描繪。An eleventh aspect of the present invention is the photomask of the tenth aspect, wherein the alignment mark is drawn by the drawing machine and using a coordinate system in which deformation correction is not performed.
本發明之第12態樣係如第10態樣之光罩，其中上述對準標記係藉由上述描繪機並使用上述修正座標系而進行描繪。A twelfth aspect of the invention is the reticle of the tenth aspect, wherein the alignment mark is drawn by the drawing machine and using the modified coordinate system.
本發明之第13態樣係如第10至第12態樣中任一態樣之光罩，其中上述第1薄膜及上述第2薄膜中之一方係遮光膜，另一方係半透光膜，上述光罩具有遮光部、透光部、及半透光部。The ninth aspect of the present invention, wherein the first film and the second film are one of a light shielding film, and the other is a semi-transmissive film. The photomask has a light shielding portion, a light transmitting portion, and a semi-light transmitting portion.
本發明之第14態樣係一種顯示裝置之製造方法，其包含對積層於基板上之複數個被加工膜之各個實施藉由曝光機而轉印形成於光罩上之轉印用圖案之光微影步驟，並使上述被加工膜圖案化之步驟；使用具有第1轉印用圖案之第1光罩使上述所積層之複數個被加工膜中之至少第1被加工膜圖案化，使用具有第2轉印用圖案之第2光罩而使上述所積層之複數個被加工膜中之第2被加工膜圖案化，上述第1轉印用圖案及第2轉印用圖案分別包含根據上述曝光機所具有之形變特性並使用實施相同形變修正後之修正座標系而描繪之部分，上述第1光罩之上述第1轉印用圖案包含：第1主圖案，其係使形成於透明基板上之第1薄膜圖案化而成；第2圖案，其係使形成於上述透明基板上之第2薄膜圖案化而成；及對準標記，其係使上述第1薄膜圖案化而成；且上述第1主圖案及上述第2圖案係根據上述形變特性並使用上述修正座標系進行描繪而劃定。According to a fourteenth aspect of the present invention, in a method of manufacturing a display device, the light of a transfer pattern formed on a photomask by an exposure machine is applied to each of a plurality of processed films laminated on a substrate. a lithography step of patterning the film to be processed; and patterning at least the first processed film among the plurality of processed films of the laminated layer by using the first mask having the first transfer pattern The second mask having the second transfer pattern is patterned by patterning the second processed film among the plurality of processed films, and the first transfer pattern and the second transfer pattern are respectively included The deformation characteristic of the exposure machine is a portion drawn by the correction coordinate system after the same distortion correction, and the first transfer pattern of the first photomask includes a first main pattern which is formed in a transparent manner. a first film on the substrate is patterned; a second pattern is formed by patterning a second film formed on the transparent substrate; and an alignment mark is formed by patterning the first film; And the first main pattern and the second pattern The case is delineated based on the above-described deformation characteristics and drawing using the above-described modified coordinate system.
根據本發明，於具備使複數個薄膜分別圖案化而成之轉印用圖案之光罩中，可對各薄膜分別實施形變修正而形成圖案，且可使該等圖案準確地疊合。According to the present invention, in the photomask including the transfer pattern in which a plurality of thin films are patterned, each of the thin films can be deformed and patterned to form a pattern, and the patterns can be accurately laminated.
以下，主要參照圖7、3、4來說明本發明之第1實施形態。圖7係本實施形態之多階調光罩之製造方法之流程圖。圖3係本實施形態之第1描繪步驟之流程圖，圖4係本實施形態之第2描繪步驟之流程圖。Hereinafter, a first embodiment of the present invention will be described mainly with reference to Figs. 7, 3, and 4. Fig. 7 is a flow chart showing a method of manufacturing the multi-step dimming cover of the embodiment. Fig. 3 is a flow chart showing the first drawing procedure of the embodiment, and Fig. 4 is a flow chart showing the second drawing step of the embodiment.
首先，一邊參照圖7，一邊對多階調光罩之製造方法之概要進行說明。First, an outline of a method of manufacturing a multi-step dimming cover will be described with reference to Fig. 7 .
準備於透明基板110上依序預先形成有作為第2薄膜之半透光膜111、及作為第1薄膜之遮光膜112的遮罩基底100b(圖7(a))。再者，於遮光膜112上，預先形成有例如由正型光阻劑材料形成之第1光阻膜133。The semi-transmissive film 111 as the second thin film and the mask base 100b as the light-shielding film 112 of the first thin film are prepared in advance on the transparent substrate 110 (FIG. 7(a)). Further, on the light shielding film 112, a first photoresist film 133 formed of, for example, a positive photoresist material is formed in advance.
透明基板110係作為包含例如石英(SiO2 )玻璃或含有SiO2 、Al2 O3 、B2 O3 、RO、R2 O等之低膨脹玻璃等之平板而構成。透明基板110之主面(表面及背面)經研磨等而平坦且平滑地構成。透明基板110可形成為例如一邊為300 mm以上之方形、例如一邊1000 mm~2400 mm之矩形。透明基板110之厚度可設為例如3 mm~20 mm。The transparent substrate 110 is configured as a flat plate including, for example, quartz (SiO 2 ) glass or low-expansion glass containing SiO 2 , Al 2 O 3 , B 2 O 3 , RO, R 2 O, or the like. The main surface (surface and back surface) of the transparent substrate 110 is flat and smooth by polishing or the like. The transparent substrate 110 can be formed, for example, in a square shape having a side of 300 mm or more, for example, a side of 1000 mm to 2400 mm. The thickness of the transparent substrate 110 can be set, for example, to 3 mm to 20 mm.
半透光膜111含有鉻化合物、矽化鉬或其化合物，例如可由CrO、CrN、CrC、MoSix、MoSiN、MoSiON、MoSiCON等構成。半透光膜111係以使用氟(F)系之蝕刻液(或蝕刻氣體)可蝕刻之方式而構成。又，半透光膜111較佳為具有下述之相對於鉻用蝕刻液(或蝕刻氣體)之耐蝕刻性。該情形時，可使半透光膜111作為使用鉻用蝕刻液蝕刻遮光膜112時之蝕刻阻止層而發揮功能。The semi-transmissive film 111 contains a chromium compound, molybdenum molybdenum or a compound thereof, and may be composed of, for example, CrO, CrN, CrC, MoSix, MoSiN, MoSiON, MoSiCON or the like. The semi-transmissive film 111 is formed by etching using a fluorine (F)-based etching liquid (or etching gas). Further, the semi-transmissive film 111 preferably has etching resistance with respect to the etching liquid (or etching gas) for chromium. In this case, the semi-transmissive film 111 can function as an etching stopper layer when the light-shielding film 112 is etched using an etching solution for chromium.
遮光膜112實質上可以鉻(Cr)為主成分。再者，若於遮光膜112之表面設置有Cr化合物(CrO、CrC、CrN等)之層，則可使表面具有反射抑制功能。遮光膜112係以使用例如含有硝酸鈰銨((NH4 )2Ce(NO3 )6 )及過氯酸(HClO4 )之鉻用蝕刻液可蝕刻之方式而構成。The light shielding film 112 may have chromium (Cr) as a main component. Further, when a layer of a Cr compound (CrO, CrC, CrN, or the like) is provided on the surface of the light shielding film 112, the surface can have a reflection suppressing function. The light-shielding film 112 is configured to be etchable using an etching solution containing, for example, cerium ammonium nitrate ((NH 4 ) 2 Ce (NO 3 ) 6 ) and perchloric acid (HClO 4 ).
繼而，實施第1圖案化步驟，即，對作為形成於透明基板110上之第1薄膜之遮光膜112實施光微影步驟，形成作為第1圖案之遮光膜圖案112p(圖7(b)~圖7(e))。Then, a first patterning step of performing a photolithography step on the light shielding film 112 as the first film formed on the transparent substrate 110 is performed to form a light shielding film pattern 112p as a first pattern (FIG. 7(b)~ Figure 7 (e)).
具體而言，首先實施第1描繪步驟，其係藉由描繪機並使用包含對準標記資料與第1主圖案資料在內之第1圖案資料而於第1光阻膜133上描繪遮光膜圖案112p。於第1描繪步驟中，使用對準標記資料及未實施形變修正之標準座標系而描繪對準標記之形成預定區域112b'(圖7(b))。接著，使用第1主圖案資料及實施形變修正後之修正座標系而描繪第1主圖案之形成預定區域112a'(圖7(c))。再者，關於第1描繪步驟之詳細情形將於以下描述。Specifically, first, a first drawing step is performed in which a light-shielding film pattern is drawn on the first resist film 133 by using a first image data including alignment mark data and first main pattern data by a drawing machine. 112p. In the first drawing step, the alignment mark forming region 112b' is drawn using the alignment mark material and the standard coordinate system in which the distortion correction is not performed (FIG. 7(b)). Next, the first main pattern data and the correction coordinate system after the distortion correction are performed to draw the predetermined region 112a' of the first main pattern (FIG. 7(c)). Furthermore, the details of the first drawing step will be described below.
然後，對第1光阻膜133進行顯影，形成分別覆蓋對準標記112b之形成預定區域112b'及第1主圖案之形成預定區域112a'之第1光阻圖案133p(圖7(d))。其後，將第1光阻圖案133p作為遮罩而蝕刻遮光膜112之露出部分，形成作為第1圖案之遮光膜圖案112p(圖7(e))。遮光膜圖案112p具備第1主圖案112a及對準標記112b。接著，去除第1光阻圖案133p後，形成分別覆蓋遮光膜112p之上面及露出之半透光膜111之上面的第2光阻膜134(圖7(f))。第2光阻膜134例如係由正型光阻劑材料所形成。Then, the first photoresist film 133 is developed to form a first photoresist pattern 133p that covers the formation predetermined region 112b' of the alignment mark 112b and the predetermined formation region 112a' of the first main pattern (FIG. 7(d)). . Thereafter, the exposed portion of the light-shielding film 112 is etched by using the first photoresist pattern 133p as a mask to form a light-shielding film pattern 112p as a first pattern (FIG. 7(e)). The light shielding film pattern 112p includes a first main pattern 112a and an alignment mark 112b. Next, after the first photoresist pattern 133p is removed, the second photoresist film 134 which covers the upper surface of the light shielding film 112p and the upper surface of the exposed semi-transmissive film 111 is formed (FIG. 7(f)). The second photoresist film 134 is formed, for example, of a positive photoresist material.
繼而，實施第2圖案化步驟，即，對作為形成於透明基板110上之第2薄膜之半透光膜111實施光微影步驟，形成作為第2圖案之半透光膜圖案111p(圖7(g)~圖7(j))。Then, a second patterning step of performing a photolithography step on the semi-transmissive film 111 as the second film formed on the transparent substrate 110 is performed to form a semi-transmissive film pattern 111p as the second pattern (FIG. 7). (g) ~ Figure 7 (j)).
具體而言，首先實施第2描繪步驟，其係藉由描繪機並使用第2圖案資料而於第2光阻膜134上描繪半透光膜圖案111p。於第2描繪步驟中，使用標準座標系並參照對準標記112b。接著，使用第2圖案資料及修正座標系而於第2光阻膜134上描繪半透光膜圖案之形成預定區域111p'(圖7(g))。再者，關於第2描繪步驟之詳細情形將於以下描述。Specifically, first, a second drawing step of drawing the semi-transmissive film pattern 111p on the second resist film 134 by using the second pattern data is performed. In the second drawing step, the standard coordinate system is used and the alignment mark 112b is referred to. Next, the formation region 111p' of the semi-transmissive film pattern is drawn on the second photoresist film 134 using the second pattern data and the correction coordinate system (FIG. 7(g)). Furthermore, the details of the second drawing step will be described below.
然後，對第2光阻膜134進行顯影，形成覆蓋半透光膜圖案之形成預定區域111p'之第2光阻圖案134p(圖7(h))。其後，將第2光阻圖案134p作為遮罩而蝕刻半透光膜111之露出部分，形成作為第2圖案之半透光膜圖案111p(圖7(i))。接著，去除第2光阻圖案134p，完成具有遮光部101、透光部103、及半透光部102之多階調光罩100之製造(圖7(j))。Then, the second photoresist film 134 is developed to form a second photoresist pattern 134p covering the predetermined region 111p' of the semi-transmissive film pattern (FIG. 7(h)). Thereafter, the exposed portion of the semi-transmissive film 111 is etched by using the second photoresist pattern 134p as a mask to form a semi-transmissive film pattern 111p as a second pattern (FIG. 7(i)). Next, the second photoresist pattern 134p is removed, and the multi-step dimming cover 100 having the light shielding portion 101, the light transmitting portion 103, and the semi-light transmitting portion 102 is completed (FIG. 7(j)).
如圖7(j)所示，光罩100具備：使形成於透明基板110上之遮光膜112圖案化所成之第1主圖案112a；使形成於透明基板110上之半透光膜111圖案化所成之半透光膜圖案111p；及含有使遮光膜112圖案化所成之對準標記112b之特定之轉印用圖案。As shown in FIG. 7(j), the photomask 100 includes a first main pattern 112a formed by patterning the light shielding film 112 formed on the transparent substrate 110, and a semi-transmissive film 111 pattern formed on the transparent substrate 110. The semi-transmissive film pattern 111p formed; and a specific transfer pattern including the alignment mark 112b formed by patterning the light shielding film 112.
再者，上述之第1主圖案112a及半透光膜圖案111p係藉由描繪機並使用實施相同形變修正後之修正座標系進行描繪，以此決定各個之座標。以下，一邊參照圖3、4一邊對上述描繪步驟進行說明。Further, the first main pattern 112a and the semi-transmissive film pattern 111p described above are drawn by a drawing machine using a correction coordinate system subjected to the same distortion correction, thereby determining each coordinate. Hereinafter, the drawing step will be described with reference to FIGS. 3 and 4.
如圖3(a)所示，首先，準備第1層之描繪資料即第1圖案資料(S301)。將第1圖案資料之構成例示於圖3(b)。於圖3(b)中，對準標記資料係以■符號表示，第1主圖案資料係以十字符號表示。再者，於本實施形態中，第1主圖案之形成預定區域112a'之描繪與對準標記之形成預定區域112b'之描繪並非同時進行而是依序進行。因此，對準標記資料與第1主圖案資料係以可個別參照之方式可分離地構成。將自第1主圖案分離之對準標記資料之構成例示於圖3(c)。As shown in FIG. 3(a), first, the first pattern data, which is the drawing material of the first layer, is prepared (S301). An example of the configuration of the first pattern data is shown in Fig. 3(b). In Fig. 3(b), the alignment mark data is indicated by the ■ symbol, and the first main pattern data is indicated by the cross symbol. Further, in the present embodiment, the drawing of the first predetermined pattern forming region 112a' and the drawing of the alignment mark forming region 112b' are not performed simultaneously but sequentially. Therefore, the alignment mark data and the first main pattern data are detachably constructed in a manner that can be individually referred to. An example of the configuration of the alignment mark data separated from the first main pattern is shown in Fig. 3(c).
繼而，開始第1層之描繪(S302)。此時描繪機中設定有未實施形變修正之標準座標系(正方格子)。將標準座標系之構成例示於圖3(d)。然後，使用標準座標系，對上述第1光阻膜133進行對準標記之形成預定區域112b'之描繪(S303，S304)。將對準標記之形成預定區域112b'之描繪結果例示於圖3(e)。由於使用構成為正方格子之標準座標系，故圖3(e)中例示之描繪結果與圖3(c)中例示之對準標記資料一致。再者，於描繪對準標記之形成預定區域112b'時，未進行第1主圖案之形成預定區域112a'之描繪。Then, the drawing of the first layer is started (S302). At this time, a standard coordinate system (square lattice) in which the distortion correction is not performed is set in the drawing machine. The configuration of the standard coordinate system is shown in Fig. 3(d). Then, the first photoresist film 133 is patterned by the alignment mark forming predetermined region 112b' using a standard coordinate system (S303, S304). The drawing result of the formation target region 112b' of the alignment mark is exemplified in Fig. 3(e). Since the standard coordinate system formed as a square lattice is used, the drawing result illustrated in Fig. 3(e) coincides with the alignment mark data exemplified in Fig. 3(c). Further, when the predetermined region 112b' for forming the alignment mark is drawn, the drawing of the predetermined region 112a' for forming the first main pattern is not performed.
繼而，對設定於描繪機中之標準座標系進行作為形變資料之特定之描繪用形變修正參數之展開，藉此取得修正座標系(S305)。然後，將所取得之修正座標系再次設定於描繪機中。將形變標準座標系、描繪用形變修正參數、及修正座標系分別例示於圖3(f)、(g)、(h)。Then, the standard coordinate system set in the drawing machine is developed as a specific deformation correction parameter for the deformation data, thereby obtaining a correction coordinate system (S305). Then, the acquired correction coordinate system is set again in the drawing machine. The deformation standard coordinate system, the distortion correction parameter for drawing, and the correction coordinate system are respectively illustrated in Figs. 3(f), (g), and (h).
再者，圖3(g)中例示之作為形變資料之描繪用形變修正參數成為主要根據藉由使用有光罩100與曝光機之曝光步驟所產生之圖案之座標之形變傾向而將其抵消之資料。描繪用形變修正參數例如係以如述方式獲得：準備具有藉由描繪機描繪特定之測試圖案資料所得之測試圖案的測試遮罩，進行使用上述曝光裝置將測試圖案轉印至被轉印體上而形成轉印測試圖案之轉印測試，並比較轉印測試圖案與測試圖案資料。即，自測試圖案測定複數個測定點之座標值，另一方面，實際上自轉印測試所取得之轉印測試圖案實測與上述測定點對應之點之座標值，並比較測試圖案上之測定點與轉印測試圖案上之測定點之座標，藉此可取得描繪用形變修正參數。再者，轉印測試圖案可為光阻圖案，亦可為將該光阻圖案作為遮罩而對位於光阻層下之薄膜進行蝕刻加工所得之薄膜圖案。Further, the distortion correction parameter for drawing as the deformation data illustrated in FIG. 3(g) is mainly based on the deformation tendency of the coordinates of the pattern generated by the exposure step using the mask 100 and the exposure machine. data. The drawing deformation correction parameter is obtained, for example, by preparing a test mask having a test pattern obtained by drawing a specific test pattern data by a drawing machine, and transferring the test pattern to the object to be transferred using the above exposure apparatus. A transfer test of the transfer test pattern is formed, and the transfer test pattern and the test pattern data are compared. That is, the coordinate value of the plurality of measurement points is measured from the test pattern, and on the other hand, the transfer test pattern obtained from the transfer test actually measures the coordinate value of the point corresponding to the above-mentioned measurement point, and compares the measurement points on the test pattern. And the coordinates of the measurement points on the transfer test pattern, whereby the deformation correction parameters for drawing can be obtained. Furthermore, the transfer test pattern may be a photoresist pattern, or may be a film pattern obtained by etching the film under the photoresist layer using the photoresist pattern as a mask.
繼而，使用修正座標系，對上述第1光阻膜133進行第1主圖案之形成預定區域112a'之描繪(S306)。將描繪結果例示於圖3(i)。由於使用修正座標系，故圖3(i)中例示之描繪結果成為相對於圖3(b)中例示之第1主圖案資料已實施特定之形變修正後的構成。Then, the first photoresist film 133 is subjected to the drawing of the predetermined region 112a' of the first main pattern by using the modified coordinate system (S306). The result of the drawing is illustrated in Fig. 3(i). Since the modified coordinate system is used, the result of the drawing illustrated in FIG. 3(i) is a configuration in which specific distortion correction has been performed with respect to the first main pattern data illustrated in FIG. 3(b).
其後，如上述圖7(d)~圖7(f)所示，對第1光阻膜133進行顯影而形成上述第1光阻圖案133p。接著，實施將第1光阻圖案133p作為遮罩而蝕刻遮光膜112之露出部分，形成作為第1圖案之遮光膜圖案112p，去除第1光阻圖案133p之一系列處理後形成第2光阻膜134(S307)。Thereafter, as shown in FIGS. 7(d) to 7(f) above, the first photoresist film 133 is developed to form the first photoresist pattern 133p. Then, the exposed portion of the light-shielding film 112 is etched by using the first photoresist pattern 133p as a mask, and the light-shielding film pattern 112p as the first pattern is formed, and the second photoresist is formed by one series of the first photoresist pattern 133p. Film 134 (S307).
如圖4(a)所示，首先，準備第2層之描繪資料即第2圖案資料(S401)。將第2圖案資料之構成例示於圖4(c)。於圖4(c)中，第2圖案資料係以×符號表示。再者，將規定第2圖案資料之配置之對準標記資料之配置例示於圖4(b)。As shown in FIG. 4(a), first, the second pattern data, which is the drawing material of the second layer, is prepared (S401). An example of the configuration of the second pattern data is shown in Fig. 4(c). In Fig. 4(c), the second pattern data is indicated by an X symbol. Further, an arrangement example of the alignment mark data for specifying the arrangement of the second pattern data is shown in Fig. 4(b).
繼而，將未實施形變修正之標準座標系(正方格子)再次設定於描繪機中，使用標準座標系並參照對準標記112b(S402)，取得第1層資訊(對準標記112b之位置或比例(scale)等)(S403)。將設定於描繪機中之標準座標系、及經由步驟S402、S403所取得之第1層資訊分別例示於圖4(d)、(e)。然後，根據所取得之第1層資訊而決定對第2光阻膜進行描繪之描繪開始位置或描繪方向。Then, the standard coordinate system (square lattice) in which the distortion correction is not performed is set again in the drawing machine, and the first layer information (the position or ratio of the alignment mark 112b is obtained by referring to the alignment mark 112b using the standard coordinate system (S402). (scale), etc.) (S403). The standard coordinate system set in the drawing machine and the first layer information acquired through steps S402 and S403 are respectively illustrated in FIGS. 4(d) and 4(e). Then, based on the acquired first layer information, the drawing start position or the drawing direction for drawing the second resist film is determined.
繼而，對設置於描繪機中之標準座標系圖4(f)(正方格子)進行特定之描繪用形變修正參數(上述之形變資料)之展開，藉此取得修正座標系(S404)。接著，將所取得之修正座標系再次設定於描繪機中。將描繪用形變修正參數、及修正座標系分別例示於圖4(g)、(h)。Then, the deformation coordinate correction parameter (the above-described deformation data) for specifying the standard coordinate system 4 (f) (square lattice) provided in the drawing machine is developed to obtain the correction coordinate system (S404). Next, the acquired correction coordinate system is set again in the drawing machine. The deformation correction parameters and the correction coordinate system for drawing are respectively illustrated in FIGS. 4(g) and (h).
繼而，使用修正座標系，對上述第2光阻膜134進行第2圖案之形成預定區域111p'之描繪(S405)。將描繪結果例示於圖4(i)。由於使用修正座標系，故圖4(i)中例示之描繪結果成為相對於圖4(c)中例示之第2圖案資料已實施特定之形變修正後的構成。Then, the second resist film 134 is subjected to the drawing of the second pattern forming region 111p' using the modified coordinate system (S405). The result of the drawing is illustrated in Fig. 4(i). Since the modified coordinate system is used, the result of the drawing illustrated in FIG. 4(i) is a configuration in which the specific distortion correction has been performed with respect to the second pattern data illustrated in FIG. 4(c).
其後，如上述圖7(h)~圖7(i)所示，對第2光阻膜134進行顯影而形成第2光阻圖案134p。接著，將第2光阻圖案134p作為遮罩而蝕刻半透光膜111之露出部分，形成作為第2圖案之半透光膜圖案111p。然後，去除第2光阻圖案134p，結束本實施形態之光罩100之製造。Thereafter, as shown in FIGS. 7(h) to 7(i) above, the second photoresist film 134 is developed to form the second photoresist pattern 134p. Next, the exposed portion of the semi-transmissive film 111 is etched by using the second photoresist pattern 134p as a mask to form a semi-transmissive film pattern 111p as a second pattern. Then, the second photoresist pattern 134p is removed, and the manufacture of the mask 100 of the present embodiment is completed.
如此，第1主圖案112a及半透光膜圖案111p係藉由描繪機並使用實施相同形變修正後之修正座標系(圖3(h)、圖4(h)中例示之座標系)進行描繪，以此決定各個之座標。又，對準標記112b係使用未實施形變修正之標準座標系(圖3(c)中例示之座標系)進行描繪。As described above, the first main pattern 112a and the semi-transmissive film pattern 111p are drawn by the drawing device using the correction coordinate system (the coordinate system illustrated in FIG. 3(h) and FIG. 4(h)) subjected to the same distortion correction. In order to determine the coordinates of each. Further, the alignment mark 112b is drawn using a standard coordinate system (coordinate system exemplified in FIG. 3(c)) in which the distortion correction is not performed.
再者，所製造之光罩100可用於一種顯示裝置之製造方法，其包含對積層於基板上複數個被加工膜之各個實施藉由曝光機而轉印形成於光罩上之轉印用圖案的光微影步驟，且包含使被加工膜圖案化之步驟。即，於使用具有第1轉印用圖案之第1光罩而圖案化所積層之複數個被加工膜中之第1被加工膜，且使用具有第2轉印用圖案之第2光罩而圖案化所積層之複數個被加工膜中之第2被加工膜時，可將本實施形態之光罩100用作第1光罩。Furthermore, the photomask 100 manufactured can be used in a method for manufacturing a display device, which comprises performing a transfer pattern formed on a photomask by an exposure machine for each of a plurality of processed films laminated on a substrate. The photolithography step includes the step of patterning the film being processed. In other words, the first processed film among the plurality of processed films laminated with the first photomask having the first transfer pattern is patterned, and the second photomask having the second transfer pattern is used. When the second processed film among the plurality of processed films is patterned, the photomask 100 of the present embodiment can be used as the first photomask.
根據本實施形態而發揮以下所示之1種或複數種效果。According to this embodiment, one or a plurality of effects described below are exhibited.
根據本實施形態，包括：第1圖案化步驟，其係對形成於透明基板110上之遮光膜112實施光微影步驟而形成遮光膜圖案112p；及第2圖案化步驟，其係對形成於透明基板110上之半透光膜111實施光微影步驟而形成半透光膜圖案111p。而且，第1圖案化步驟包含第1描繪步驟，第2圖案化步驟包含第2描繪步驟，於第1描繪步驟及第2描繪步驟中，使用實施相同形變修正後之修正座標系(圖3(h)、圖4(h)中例示之座標系)進行描繪。藉此，可對遮光膜圖案112p及半透光膜圖案111p實施相同之形變修正。而且，可消除由光罩100之撓曲、或曝光機之成像光學系統之誤差等所產生之轉印時之形變，從而可提高使用光罩100所製造之顯示裝置之製造良率，例如可有利地製造更微細化之彩色濾光片等。According to this embodiment, the first patterning step includes: performing a photolithography step on the light shielding film 112 formed on the transparent substrate 110 to form the light shielding film pattern 112p; and a second patterning step of forming the pair The semi-transmissive film 111 on the transparent substrate 110 is subjected to a photolithography step to form a semi-transmissive film pattern 111p. Further, the first patterning step includes a first drawing step, and the second patterning step includes a second drawing step, and in the first drawing step and the second drawing step, a modified coordinate system that performs the same distortion correction is used (FIG. 3 (FIG. 3) h), the coordinate system illustrated in Fig. 4(h) is depicted. Thereby, the same distortion correction can be performed on the light shielding film pattern 112p and the semi-transmissive film pattern 111p. Moreover, the deformation at the time of transfer caused by the deflection of the reticle 100 or the error of the imaging optical system of the exposure machine can be eliminated, and the manufacturing yield of the display device manufactured using the reticle 100 can be improved, for example, It is advantageous to manufacture a finer color filter or the like.
又，根據本實施形態，於第1描繪步驟中，使用未實施形變修正之標準座標系(圖3(c)中例示之座標系)而描繪對準標記112b。而且，於第2描繪步驟中，使用標準座標系(圖4(d)中例示之座標系)並參照對準標記112b。如此，使用相同之標準座標系進行對準標記112b之描繪及參照。藉此，於第2圖案化步驟中可確實讀出對準標記112b。而且，可提高遮光膜圖案112p與半透光膜圖案111p之疊合精度，且可提高顯示裝置之製造良率。Further, according to the present embodiment, in the first drawing step, the alignment mark 112b is drawn using the standard coordinate system (the coordinate system illustrated in FIG. 3(c)) in which the distortion correction is not performed. Further, in the second drawing step, the standard coordinate system (the coordinate system illustrated in FIG. 4(d)) is used and the alignment mark 112b is referred to. Thus, the drawing and reference of the alignment mark 112b are performed using the same standard coordinate system. Thereby, the alignment mark 112b can be surely read in the second patterning step. Moreover, the accuracy of superimposing the light-shielding film pattern 112p and the semi-transmissive film pattern 111p can be improved, and the manufacturing yield of the display device can be improved.
本實施形態中，第1描繪步驟及第2描繪步驟與第1實施形態不同。以下，主要參照圖5、6來說明本實施形態之描繪步驟。圖5係本實施形態之第1描繪步驟之流程圖，圖6係本實施形態之第2描繪步驟之流程圖。In the present embodiment, the first drawing step and the second drawing step are different from the first embodiment. Hereinafter, the drawing procedure of this embodiment will be described mainly with reference to Figs. Fig. 5 is a flow chart showing the first drawing step of the embodiment, and Fig. 6 is a flow chart showing the second drawing step of the embodiment.
如圖5(a)所示，首先，準備第1層之描繪資料即第1圖案資料(S501)。將第1圖案資料之構成例示於圖5(b)。於圖5(b)中，對準標記資料係以■符號表示，第1主圖案資料係以+字符號表示。再者，於本實施形態中，同時進行第1主圖案之形成預定區域112a'之描繪與對準標記之形成預定區域112b'之描繪。因此，對準標記資料與第1主圖案資料亦可並不構成為可分離。As shown in FIG. 5(a), first, the first pattern data, which is the drawing material of the first layer, is prepared (S501). An example of the configuration of the first pattern data is shown in Fig. 5(b). In Fig. 5(b), the alignment mark data is indicated by the ■ symbol, and the first main pattern data is represented by the + character number. Further, in the present embodiment, the drawing of the first predetermined pattern forming region 112a' and the drawing of the alignment mark forming region 112b' are simultaneously performed. Therefore, the alignment mark data and the first main pattern data may not be detachable.
繼而，開始進行第1層之描繪(S502)。首先，對設定於描繪機中之標準座標系進行作為形變資料之特定之描繪用形變修正參數之展開，藉此取得修正座標系(S503)。然後，將所取得之修正座標系設定於描繪機中。將形變標準座標系、描繪用形變修正參數、及修正座標系分別例示於圖5(c)、(d)、(e)。Then, the drawing of the first layer is started (S502). First, the standard coordinate system set in the drawing machine is developed as a specific deformation correction parameter for the deformation data, thereby obtaining a correction coordinate system (S503). Then, the acquired correction coordinate system is set in the drawing machine. The deformation standard coordinate system, the distortion correction parameter for drawing, and the correction coordinate system are respectively illustrated in FIGS. 5(c), (d), and (e).
繼而，使用修正座標系，對上述第1光阻膜133進行對準標記之形成預定區域112b'及第1主圖案之形成預定區域112a'之描繪(S504)。將描繪結果例示於圖5(f)。由於使用修正座標系，故圖5(f)中例示之描繪結果成為相對於圖5(b)中例示之第1主圖案資料已實施特定之形變修正後的構成。Then, using the correction coordinate system, the first resist film 133 is formed with the alignment mark formation predetermined region 112b' and the first main pattern formation predetermined region 112a' (S504). The result of the drawing is illustrated in Fig. 5(f). Since the modified coordinate system is used, the result of the drawing illustrated in FIG. 5(f) is a configuration in which the specific distortion correction has been performed with respect to the first main pattern data illustrated in FIG. 5(b).
其後，如上述圖7(d)~圖7(f)所示，對第1光阻膜133進行顯影而形成上述第1光阻圖案133p。接著，實施將第1光阻圖案133p作為遮罩而蝕刻遮光膜112之露出部分，形成作為第1圖案之遮光膜圖案112p，去除第1光阻圖案133p之一系列處理後形成第2光阻膜134(S505)。Thereafter, as shown in FIGS. 7(d) to 7(f) above, the first photoresist film 133 is developed to form the first photoresist pattern 133p. Then, the exposed portion of the light-shielding film 112 is etched by using the first photoresist pattern 133p as a mask, and the light-shielding film pattern 112p as the first pattern is formed, and the second photoresist is formed by one series of the first photoresist pattern 133p. Membrane 134 (S505).
如圖6(a)所示，首先，準備第2層之描繪資料即第2圖案資料(S601)。將第2圖案資料之構成例示於圖6(c)。於圖6(c)中，第2圖案資料係以×符號表示。As shown in FIG. 6(a), first, the second pattern data, which is the drawing material of the second layer, is prepared (S601). An example of the configuration of the second pattern data is shown in Fig. 6(c). In Fig. 6(c), the second pattern data is indicated by an X symbol.
另一方面，於描繪機中，以與上述相同之方法，對標準座標系進行作為形變資料之特定之描繪用形變修正參數之展開(S602)，藉此取得修正座標系，並將形變標準座標系、描繪用形變修正參數、及修正座標系分別例示於圖6(d)、(e)、(f)。On the other hand, in the drawing machine, in the same manner as described above, the standard coordinate system is developed as a specific deformation correction parameter for the deformation data (S602), whereby the corrected coordinate system is obtained, and the deformation standard coordinate is obtained. The system, the distortion correction parameters for drawing, and the correction coordinate system are respectively illustrated in FIGS. 6(d), (e), and (f).
以與上述相同之方法，於描繪機中設定有修正座標系之狀態下，使用修正座標系並參照對準標記112b(S603)，取得第1層資訊(對準標記112b之位置或比例等)(S604)。將經由步驟S603、S604所取得之第1層資訊、修正座標系例示於圖6(g)。In the same manner as described above, in the state in which the correction coordinate system is set in the drawing device, the first coordinate information (the position or the ratio of the alignment mark 112b, etc.) is obtained by using the correction coordinate system and referring to the alignment mark 112b (S603). (S604). The first layer information and the corrected coordinate system obtained through steps S603 and S604 are exemplified in Fig. 6(g).
繼而，使用修正座標系，對上述第2光阻膜134進行第2圖案之形成預定區域111p'之描繪(S605)。將描繪結果例示於圖6(h)。由於使用修正座標系，故圖6(h)中例示之描繪結果成為相對於圖6(c)中例示之第2圖案資料已實施特定之形變修正後的構成。Then, the second resist film 134 is subjected to the drawing of the second pattern forming region 111p' using the modified coordinate system (S605). The result of the drawing is illustrated in Fig. 6(h). Since the modified coordinate system is used, the result of the drawing illustrated in FIG. 6(h) is a configuration in which the specific distortion correction has been performed with respect to the second pattern data illustrated in FIG. 6(c).
其後，如上述圖7(h)~圖7(i)所示，對第2光阻膜134進行顯影而形成第2光阻圖案134p。接著，將第2光阻圖案134p作為遮罩而局部蝕刻半透光膜111之露出部分，形成作為第2圖案之半透光膜圖案111p。然後，去除第2光阻圖案134p，結束本實施形態之光罩100之製造。Thereafter, as shown in FIGS. 7(h) to 7(i) above, the second photoresist film 134 is developed to form the second photoresist pattern 134p. Next, the exposed portion of the semi-transmissive film 111 is partially etched by using the second photoresist pattern 134p as a mask to form a semi-transmissive film pattern 111p as a second pattern. Then, the second photoresist pattern 134p is removed, and the manufacture of the mask 100 of the present embodiment is completed.
本實施形態中，於第1描繪步驟及第2描繪步驟中，亦使用實施相同形變修正後之修正座標系(圖5(e)、圖6(f)中例示之座標系)進行描繪。藉此，可對遮光膜圖案112p及半透光膜圖案111p實施相同之形變修正。而且，可消除光罩使用時由設置於曝光機中之光罩100之撓曲、或曝光機之成像光學系統之誤差等所產生之轉印時之形變，從而可提高使用光罩100所製造之顯示裝置之製造良率。In the present embodiment, in the first drawing step and the second drawing step, the correction coordinate system (the coordinate system illustrated in FIG. 5(e) and FIG. 6(f)) subjected to the same distortion correction is also used for drawing. Thereby, the same distortion correction can be performed on the light shielding film pattern 112p and the semi-transmissive film pattern 111p. Moreover, the deformation at the time of transfer caused by the deflection of the reticle 100 provided in the exposure machine or the error of the imaging optical system of the exposure machine during use of the reticle can be eliminated, thereby improving the manufacturing using the reticle 100. The manufacturing yield of the display device.
又，根據本實施形態，於第1描繪步驟中，使用實施形變修正後之修正座標系(圖5(e)中例示之座標系)而描繪對準標記112b。而且，於第2描繪步驟中，使用實施形變修正後之修正座標系(圖6(f)中例示之座標系)並參照對準標記112b。如此，使用相同之標準座標系進行對準標記之描繪及參照。藉此，於第2圖案化步驟中可確實讀出對準標記112b。而且，可提高遮光膜圖案112p與半透光膜圖案111p之疊合精度，且可提高顯示裝置之製造良率。Further, according to the present embodiment, in the first drawing step, the alignment mark 112b is drawn using the correction coordinate system (the coordinate system illustrated in FIG. 5(e)) after the distortion correction is performed. Further, in the second drawing step, the correction coordinate system (the coordinate system illustrated in FIG. 6(f)) subjected to the distortion correction is used and the alignment mark 112b is referred to. Thus, the same standard coordinate system is used to draw and reference the alignment marks. Thereby, the alignment mark 112b can be surely read in the second patterning step. Moreover, the accuracy of superimposing the light-shielding film pattern 112p and the semi-transmissive film pattern 111p can be improved, and the manufacturing yield of the display device can be improved.
又，根據本實施形態，同時進行第1主圖案之形成預定區域112a'之描繪、與對準標記之形成預定區域112b'之描繪。因此，可準確控制第1主圖案112a與對準標記112b之相對位置。其結果為可提高第1主圖案112a與第2圖案111p之疊合精度。Further, according to the present embodiment, the drawing of the first main pattern forming region 112a' and the drawing of the alignment mark forming region 112b' are simultaneously performed. Therefore, the relative positions of the first main pattern 112a and the alignment mark 112b can be accurately controlled. As a result, the superimposition accuracy of the first main pattern 112a and the second pattern 111p can be improved.
於上述第1實施形態及第2實施形態中，顯示下述態樣：相對於透明基板上依序積層半透光膜及遮光膜所成之光罩基底，對遮光膜實施第1圖案化步驟而形成遮光膜圖案，繼而對半透光膜實施第2圖案化步驟而形成半透光圖案。In the first embodiment and the second embodiment, the first patterning step is performed on the light-shielding film by sequentially laminating the mask substrate formed by the semi-transmissive film and the light-shielding film on the transparent substrate. A light shielding film pattern is formed, and then the semi-transmissive film is subjected to a second patterning step to form a semi-transmissive pattern.
本發明中，相對於在透明基板上依序積層半透光膜及遮光膜所成之相同之光罩基底，亦可對半透光膜實施第1圖案化步驟而形成半透光膜圖案，繼而對遮光膜實施第2圖案化步驟而形成遮光膜圖案。此時，於形成半透光膜圖案之第1圖案化步驟中，可包括遮光膜之蝕刻處理。In the present invention, the semi-transmissive film may be formed by performing a first patterning step on the semi-transparent film in the same manner as the photomask substrate formed by sequentially laminating the semi-transmissive film and the light-shielding film on the transparent substrate. Then, the second patterning step is performed on the light shielding film to form a light shielding film pattern. At this time, in the first patterning step of forming the semi-transmissive film pattern, an etching treatment of the light-shielding film may be included.
上述實施形態中，係使用於透明基板110上依序預先形成有半透光膜111及遮光膜112，並於遮光膜112上形成有第1光阻膜133之遮罩基底100b，但本發明並不限定於上述實施形態。例如，使用於透明基板110上依序形成有遮光膜112及第1光阻膜133之遮罩基底200b之情形時，本發明亦可較佳地適應。圖8係本實施形態之多階調光罩之製造方法之流程圖。In the above embodiment, the semi-transmissive film 111 and the light-shielding film 112 are sequentially formed on the transparent substrate 110, and the mask substrate 100b of the first photoresist film 133 is formed on the light-shielding film 112. However, the present invention It is not limited to the above embodiment. For example, when the light-shielding film 112 and the mask substrate 200b of the first photoresist film 133 are sequentially formed on the transparent substrate 110, the present invention can be preferably adapted. Fig. 8 is a flow chart showing a method of manufacturing the multi-step dimming cover of the embodiment.
首先，準備於透明基板110上依序形成有遮光膜112及第1光阻膜133之遮罩基底200b(圖8(a))。First, the mask base 200b of the light-shielding film 112 and the first photoresist film 133 is formed in order on the transparent substrate 110 (FIG. 8(a)).
繼而，實施第1圖案化步驟，即，對形成於透明基板110上之遮光膜112實施光微影步驟，形成作為第1圖案之遮光膜圖案112p(圖8(b)~圖8(d))。具體而言，首先實施第1描繪步驟，其係藉由描繪機並使用包含對準標記資料及第1主圖案資料在內之第1圖案資料而於第1光阻膜133上描繪遮光膜圖案112p(圖8(b)、(c))。Then, a first patterning step is performed to perform a photolithography step on the light shielding film 112 formed on the transparent substrate 110 to form a light shielding film pattern 112p as a first pattern (FIG. 8(b) to FIG. 8(d) ). Specifically, first, a first drawing step of drawing a light-shielding film pattern on the first resist film 133 by using a first image data including alignment mark data and first main pattern data is performed by a drawing machine. 112p (Fig. 8(b), (c)).
接著，對第1光阻膜133進行顯影，形成分別覆蓋對準標記之形成預定區域112b'及第1主圖案之形成預定區域112a'之第1光阻圖案133p(圖8(d))。然後，將第1光阻圖案133p作為遮罩而蝕刻遮光膜112之露出部分，形成遮光膜圖案112p(圖8(e))。遮光膜圖案112p具備第1主圖案112a及對準標記112b。Next, the first photoresist film 133 is developed to form a first photoresist pattern 133p (FIG. 8(d)) that covers the formation region 112b' of the alignment mark and the formation region 112a' of the first main pattern, respectively. Then, the exposed portion of the light shielding film 112 is etched by using the first photoresist pattern 133p as a mask to form a light shielding film pattern 112p (FIG. 8(e)). The light shielding film pattern 112p includes a first main pattern 112a and an alignment mark 112b.
接著，去除第1光阻圖案133p之後，以分別覆蓋遮光膜112p之上面及所露出之透明基板110之上面之方式而形成半透光膜111，進而以覆蓋於半透光膜111上之方式形成第2光阻膜134(圖8(f))。Then, after the first photoresist pattern 133p is removed, the semi-transmissive film 111 is formed so as to cover the upper surface of the light-shielding film 112p and the exposed upper surface of the transparent substrate 110, and further covers the semi-transmissive film 111. The second photoresist film 134 is formed (Fig. 8(f)).
繼而，實施第2圖案化步驟，即，對作為形成於透明基板110上之第2薄膜之半透光膜111實施光微影步驟，形成作為第2圖案之半透光膜圖案111p(圖8(g)~圖8(j))。具體而言，首先實施第2描繪步驟，其係藉由描繪機並使用第2圖案資料而於第2光阻膜134上描繪半透光膜圖案111p(圖8(g)、(h))。Then, a second patterning step of performing a photolithography step on the semi-transmissive film 111 as the second film formed on the transparent substrate 110 is performed to form a semi-transmissive film pattern 111p as the second pattern (FIG. 8). (g) ~ Figure 8 (j)). Specifically, first, a second drawing step is performed in which the semi-transmissive film pattern 111p is drawn on the second resist film 134 by using the second pattern data by the drawing device (FIG. 8 (g), (h)). .
然後，對第2光阻膜134進行顯影，形成覆蓋半透光膜圖案之形成預定區域111p'之第2光阻圖案134p(圖8(h))。其後，將第2光阻圖案134p作為遮罩而蝕刻半透光膜111之露出部分，形成作為第2圖案之半透光膜圖案111p(圖8(i))。接著，去除第2光阻圖案134p，完成具有遮光部101、透光部103、及半透光部102之多階調光罩200之製造(圖8(j))。Then, the second photoresist film 134 is developed to form a second photoresist pattern 134p covering the predetermined region 111p' of the semi-transmissive film pattern (FIG. 8(h)). Thereafter, the exposed portion of the semi-transmissive film 111 is etched by using the second photoresist pattern 134p as a mask to form a semi-transmissive film pattern 111p as a second pattern (FIG. 8(i)). Next, the second photoresist pattern 134p is removed, and the multi-step dimming cover 200 having the light shielding portion 101, the light transmitting portion 103, and the semi-light transmitting portion 102 is completed (Fig. 8(j)).
上述之第1描繪步驟及第2描繪步驟係可使用與第1實施形及第2實施形態相同之步驟。藉此，可取得與上述實施形態相同之效果。In the first drawing step and the second drawing step described above, the same steps as in the first embodiment and the second embodiment can be used. Thereby, the same effects as those of the above embodiment can be obtained.
本發明係具備使2層以上之複數層薄膜分別圖案化所成之轉印用圖案的光罩，可對各薄膜分別實施形變修正並形成圖案，且可使所形成之圖案之疊合精度提高。According to the present invention, there is provided a mask for patterning a plurality of layers of a plurality of thin films, wherein each of the thin films can be deformed and patterned, and the superimposed precision of the formed pattern can be improved. .
例如，於疊合分別形成於3層以上之複數層薄膜上之圖案之情形時，參照第1圖案中所含之對準標記，分別形成同樣地實施與該第1圖案中所含之第1主圖案之座標修正為相同修正後的其他複數層薄膜圖案，藉此可提高複數層薄膜圖案之疊合精度。此時，可使形成第1圖案中所含之對準標記之座標系、與為形成其他複數層薄膜圖案而參照對準標記之座標系為相等。For example, when superimposing a pattern formed on a plurality of thin films of three or more layers, the alignment marks included in the first pattern are referred to, and the first one contained in the first pattern is formed in the same manner. The coordinates of the main pattern are corrected to other modified multi-layer film patterns, thereby improving the stacking precision of the plurality of film patterns. At this time, the coordinate system forming the alignment mark included in the first pattern can be made equal to the coordinate system which refers to the alignment mark to form another plurality of thin film patterns.
又，作為疊合分別形成於3層以上之複數層薄膜上之圖案之其他方法，可於參照第1圖案之對準標記所形成之第2圖案上設置新的對準標記，進而參照該新的對準標記而形成第3圖案。如此於依序形成之圖案上設置對準標記，藉此可使實施修正後之3層以上之複數個薄膜圖案之疊合精度提高。Further, as another method of superposing patterns formed on the plurality of thin films of three or more layers, a new alignment mark can be provided on the second pattern formed by referring to the alignment mark of the first pattern, and the new alignment mark can be referred to The alignment mark forms a third pattern. By providing the alignment marks on the sequentially formed patterns, the stacking accuracy of the plurality of thin film patterns of the three or more layers after the correction can be improved.
如上所述，藉由組合基本的2層薄膜之疊合方法亦可提高3層以上之薄膜圖案之疊合精度。As described above, the stacking precision of the film pattern of three or more layers can be improved by combining the basic two-layer film stacking method.
以上，具體說明了本發明之實施形態，但本發明並不限定於上述實施形態，於不脫離其主旨之範圍內可進行各種可能。The embodiments of the present invention have been described in detail above, but the present invention is not limited to the above-described embodiments, and various possibilities are possible without departing from the scope of the invention.
100．．．光罩100. . . Mask
100b、200b．．．遮罩基底100b, 200b. . . Mask base
101．．．遮光部101. . . Shading
102．．．半透光部102. . . Semi-transparent part
103．．．透光部103. . . Translucent part
110．．．透明基板110. . . Transparent substrate
111．．．半透光膜111. . . Semi-transparent film
111p．．．半透光膜圖案111p. . . Semi-transparent film pattern
111p'．．．半透光膜圖案之形成預定區域111p'. . . a predetermined area for forming a semi-transmissive film pattern
112．．．遮光膜112. . . Sunscreen
112a．．．第1主圖案112a. . . First main pattern
112a'．．．第1主圖案之形成預定區域112a'. . . a predetermined area for forming the first main pattern
112b．．．對準標記112b. . . Alignment mark
112b'．．．對準標記之形成預定區域112b'. . . a predetermined area for forming an alignment mark
112p．．．遮光膜圖案112p. . . Sun mask pattern
133．．．第1光阻膜133. . . First photoresist film
133p．．．第1光阻圖案133p. . . First photoresist pattern
134．．．第2光阻膜134. . . Second photoresist film
134p．．．第2光阻圖案134p. . . Second resist pattern
S101~S605．．．步驟S101~S605. . . step
圖1(a)-(f)係例示對二元遮罩之轉印用圖案實施形變修正之描繪步驟之流程圖。1(a) to (f) are flowcharts showing a drawing procedure for performing deformation correction on a transfer pattern of a binary mask.
圖2(a)-(j)係例示使用對準標記進行圖案疊合之多重描繪步驟之流程圖。2(a)-(j) are flow diagrams illustrating multiple drawing steps for pattern overlay using alignment marks.
圖3(a)-(i)係例示本發明第1實施形態之第1描繪步驟之流程圖。3(a) through 3(i) are flowcharts showing a first drawing step in the first embodiment of the present invention.
圖4(a)-(i)係例示本發明第1實施形態之第2描繪步驟之流程圖。4(a) to 4(i) are flowcharts showing a second drawing procedure of the first embodiment of the present invention.
圖5(a)-(f)係例示本發明第2實施形態之第1描繪步驟之流程圖。Fig. 5 (a) - (f) are flowcharts showing a first drawing step in the second embodiment of the present invention.
圖6(a)-(h)係例示本發明第2實施形態之第2描繪步驟之流程圖。6(a) to 6(h) are flowcharts showing a second drawing procedure of the second embodiment of the present invention.
圖7(a)-(j)係例示本發明第1實施形態之多階調光罩之製造方法之流程圖。Fig. 7 (a) - (j) are flowcharts showing a method of manufacturing the multi-step dimming cover according to the first embodiment of the present invention.
圖8(a)-(j)係例示本發明之其他實施形態之多階調光罩之製造方法的流程圖。8(a) through 8(b) are flowcharts showing a method of manufacturing a multi-step dimming cover according to another embodiment of the present invention.
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| EP2869332B1 (en) * | 2012-06-27 | 2017-03-15 | Murata Manufacturing Co., Ltd. | Method for manufacturing thin film laminated element |
| JP6157832B2 (en) * | 2012-10-12 | 2017-07-05 | Hoya株式会社 | Electronic device manufacturing method, display device manufacturing method, photomask manufacturing method, and photomask |
| NL2011592A (en) | 2012-10-31 | 2014-05-06 | Asml Netherlands Bv | Compensation for patterning device deformation. |
| DE102016109099B4 (en) * | 2016-05-18 | 2023-01-19 | Infineon Technologies Ag | Exposure mask, exposure device and method for calibrating an exposure device |
| KR101918380B1 (en) * | 2017-01-06 | 2018-11-13 | 가부시키가이샤 에스케이 일렉트로닉스 | Photomask Blank having alignment pattern and photomask which use the same and the preparing method of the same |
| CN108563098A (en) * | 2018-01-17 | 2018-09-21 | 京东方科技集团股份有限公司 | A kind of mask plate and preparation method thereof |
| JP7336201B2 (en) * | 2019-02-18 | 2023-08-31 | キヤノン株式会社 | Forming methods, patterning systems, and methods of manufacturing articles |
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| JP2004235221A (en) | 2003-01-28 | 2004-08-19 | Sony Corp | Manufacturing method of mask, forming method of pattern, photomask for measuring distortion and manufacturing method of semiconductor device |
| JP5196098B2 (en) * | 2005-09-21 | 2013-05-15 | 大日本印刷株式会社 | Photomask having gradation and method for manufacturing the same |
| JP2007248943A (en) * | 2006-03-17 | 2007-09-27 | Hoya Corp | Patterning method and method for forming gray tone mask |
| TW200913013A (en) * | 2007-07-30 | 2009-03-16 | Hoya Corp | Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern |
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| JP5645261B2 (en) | 2014-12-24 |
| CN102141726A (en) | 2011-08-03 |
| TW201203312A (en) | 2012-01-16 |
| JP2011158900A (en) | 2011-08-18 |
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