TWI446105B - Method of manufacturing a photomask, method of transferring a pattern, photomask and database - Google Patents

Description

Photomask manufacturing method, pattern transfer method, photomask, and database

The present invention relates to a reticle manufacturing method, a pattern transfer method, a reticle, and a data library for manufacturing a reticle used in the manufacture of an electronic component, and more particularly to a reticle for performing a reticle design by simulating an effective transmittance. Manufacturing method, photomask, pattern transfer method, and database. In particular, the present invention relates to a pattern shape of a semi-transmissive portion in a multi-layer photomask (hereinafter, also referred to as a gray scale hood) having a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion that transmits a part of exposure light. And a film thickness of the semi-transmissive film, a mask manufacturing method for the film material design, a photomask, a pattern transfer method, a photomask, and a database.

Further, there is a display device typified by a flat panel display (FPD) device as an electronic component. More particularly, the present invention relates to a photomask for a display device, and more particularly to a method for producing a photomask for manufacturing a thin film transistor (TFT) and a color filter (CF).

The photoresist film formed on the layer to be processed subjected to the etching process is exposed to light under a predetermined exposure condition using a mask having a predetermined pattern. In the etching process, when the photoresist pattern of the mask is formed, the light is used. In the method of manufacturing the above-described photomask of the resist film, in order to manufacture a photomask that achieves a desired photoresist pattern, the determination of the pattern shape is an important factor.

In particular, in addition to the light shielding portion and the light transmitting portion, the mask having a semi-transmissive portion that transmits a part of the exposure light changes the amount of the exposure light transmitted through the mask depending on the portion, whereby the residual film value on the transferred body is determined. Parts can form different The photoresist pattern is therefore very useful. In such a mask manufacturing method, in order to manufacture a mask which achieves a desired photoresist pattern, it is important to determine the pattern shape of the semi-transmissive portion, the film material formed in the semi-transmissive portion, or the film thickness.

a semi-translucent film that transmits a part of the exposure light is formed on the transparent substrate, or a fine pattern having a size below the analysis limit under exposure conditions, and is mainly formed on the transparent substrate by the light shielding film, etc., as the photomask A method of forming a semi-transmissive portion.

Conventionally, in the production of the photomask described above, in order to obtain a desired transmittance in the semi-transmissive portion, a semi-transmissive film having a corresponding transmittance is formed. Moreover, by evaluating the completed mask, the film material formed in the pattern shape and the semi-transmissive portion, or the evaluation of the film thickness is evaluated, and based on the evaluation result, the pattern shape is corrected and changed, and the mask is manufactured next time. , to achieve the appropriate pattern shape, film material, and film thickness.

Japanese Patent Publication No. 2004-309327 (Patent Document 1) discloses that when a gray scale hood having a fine pattern is evaluated, a transmitted light image of the reticle is obtained by using a microscope using a predetermined light source, and the image processing software is used. The light-transmitting image is subjected to a halo treatment to obtain a transmission image corresponding to the resolution of the exposure machine. This technique predicts the reticle transmittance when a pattern is transferred onto a photoresist film based on the above-described hazy transmitted light image.

Japanese Laid-Open Patent Publication No. 2003-307500 (Patent Document 2) discloses a technique of evaluating a critical value of transmittance by scanning a semi-transmissive portion of a reticle and evaluating it based on the critical value.

Then, in the technique described in Patent Document 1, it is difficult to confirm whether the fine pattern formed on the photomask is vibrated by the image processing software, and it is difficult to confirm whether or not the halo equivalent to the resolution of the actual exposure machine is sufficiently reflected. Even if there is knowledge that does not adequately reflect the resolution produced by the exposure machine, there is no technique for quantitative correction.

The photoresist pattern obtained by the actual exposure machine, in addition to the main cause of the optical system of the exposure machine, the spectral characteristics of the light source, the development characteristics of the photoresist, etc., reflect the results of a large number of main causes as an exposure result. The inventor confirmed that the above-mentioned numerous main causes cannot be simulated by the image processing software.

Further, the inventors have found that the viewpoint of the "effective transmittance" in the design of the gray scale hood is useful. In the following description.

A method of reducing the exposure light to form a transmissive semi-transmissive film (having a film having a transmittance of, for example, 20% to 60% when the exposure light transmittance of the transparent substrate is 100%) is formed as a gray scale hood A method of a semi-transmissive portion (hereinafter also referred to as a gray scale portion).

In the gray scale hood, when the transmitted light intensity in the gray scale portion is Ig, the transmitted light intensity in the wide white (light transmitting) region is Iw, and the light transmitting intensity in the wide black (light blocking) region is Ib. At the time, the value represented by the following formula can be used as the transmittance of the gray scale portion.

Transmittance = {Ig / (Iw - Ib)} × 100 (%)

Here, the transmittance of the gray scale portion can take into consideration the transmittance inherent to the semitransparent film (the transmittance determined by the film and the exposure light regardless of the pattern shape), and such transmittance management, the area of the gray scale portion When the resolution of the exposure machine is sufficiently large, and the wavelength of the exposure light is constant, no problem occurs. but, When the area of the gray scale portion becomes minute, the light shielding portion adjacent to the gray scale portion, or due to the influence of the light transmitting portion, the transmittance may be different from the value of the inherent transmittance of the semitransparent film during actual exposure. The inherent transmittance of the semi-transmissive film cannot be treated as an effective value.

For example, in a gray scale hood for manufacturing a thin film transistor, a region corresponding to a channel portion is used as a gray scale portion, and a gray scale hood used in the shape of the region is equivalent to an adjacent source and drain. The area is composed of a light shielding portion. In the gray scale hood, as the area (width) of the channel portion becomes smaller, the boundary with the adjacent light shielding portion is dizzy under actual exposure conditions, and the exposure light transmittance of the channel portion becomes smaller than that of the semi-transmissive portion. The semi-transmissive film used in the film has a low transmittance.

Moreover, the actual exposure conditions are not uniform, and each exposure machine, or even the same exposure machine, varies in spectral characteristics depending on the elapsed time. When the spectral characteristics are different, that is, when the wavelengths of the exposure light are different, the transmittance of the semi-transmissive portion under actual exposure conditions is different even in the same pattern shape due to the difference in resolution.

In a thin film transistor (TFT) used in a recent liquid crystal display device, a technique is provided in which the width of the channel portion is made smaller than in the prior art, the operation speed of the liquid crystal is increased, or the liquid crystal is increased by reducing the size of the channel portion. The brightness of the display.

In the gray scale hood for manufacturing such a thin film transistor, in addition to the transmittance of the semi-transmissive film itself, when the gray scale portion was formed, the inventors found that it was necessary to consider the "effective transmittance" for the first time under actual exposure conditions.

The inventors of this article, the management of effective transmittance is also grayscale Very important knowledge in the defect inspection and correction steps of the hood.

Therefore, in the present invention, when a photoresist film having a predetermined pattern is used for the photoresist film formed on the layer to be processed by etching, exposure is performed under predetermined exposure conditions, and when the photoresist pattern is used as a light shield in the etching process, this is used. In the method for manufacturing the photomask of the photoresist film, it is possible to provide the light to be formed by evaluating the main causes of the optical system, such as the main cause of the optical system of the exposure machine, the spectral characteristics of the light source, and the development characteristics of the photoresist. The method of manufacturing the cover is for accurately determining the shape of the pattern, determining the film material or film thickness formed in the semi-transmissive portion, and further providing a pattern transfer method using the photomask. Moreover, the present invention is directed to a database useful for the evaluation of reticle.

In the present invention, the inventors of the present invention first proposed an inspection method and apparatus which can be applied to a defect inspection and correction step of a gray scale hood and which reflect an actual applicable exposure condition. On the other hand, by reflecting the inspection of the actually applicable exposure conditions and only the correction according to this, the steps up to the grayscale hood having the final perfection become many. Therefore, the present invention also strives to save such inspection and correction steps for the purpose of efficiently and accurately obtaining a gray scale hood having desired properties.

In order to achieve the above object, the method for manufacturing a photomask according to the present invention has any of the following configurations.

[Structure 1]

For the photoresist film formed on the processed layer to be processed, a photomask having a predetermined transfer pattern is used, and includes a light transmitting portion, a light blocking portion, and a semi-transmissive portion that transmits a part of the exposure light under a predetermined exposure condition. Exposure When the light is transferred to the predetermined transfer pattern and the photoresist pattern having a predetermined shape in the etching process is used as a hood, the photoresist film is characterized in that: the step of obtaining the material of the transmitted light pattern is performed, and the approximate exposure condition is used. Exposure conditions, test exposure of a test hood forming a predetermined test chart, and obtaining a transmitted light pattern of the test pattern by a photographing device, and obtaining transmitted light pattern data according to the obtained transmitted light pattern; and obtaining the test pattern The effective transmittance step of obtaining the effective transmittance of the test pattern under the exposure condition of the exposure condition according to the transmitted light pattern data; wherein, according to the effective transmittance, the light is under the predetermined exposure condition The resist film may have the resist pattern of the predetermined shape, and may include a pattern shape of the semi-transmissive portion of the photomask, a film material formed in a region including the semi-transmissive portion, or a film thickness of the region.

[Structure 2]

In the method of manufacturing a mask according to the first aspect, the test mask includes a light shielding portion, a light transmitting portion, and a semi-light transmitting portion, and includes a pattern shape of the semi-transmissive portion or a film material forming the light transmitting portion, a plurality of test patterns having different semi-transmissive portions having different film thicknesses, a pattern shape of the semi-transmissive portion of the photomask, a film material formed in a region including the semi-transmissive portion, or a region The film thickness is determined by the plurality of transmitted light pattern data obtained by the plurality of test patterns, and the relationship between the semi-transmissive portion characteristic and the effective transmittance corresponding to the semi-transmissive portion characteristic is grasped, and according to the grasp Performed in connection.

[Structure 3]

In the reticle manufacturing method having the structure 1 or the structure 2, it is characterized in that: The semi-transmissive portion included in the predetermined pattern of the mask is formed by forming a semi-transmissive film on a transparent substrate.

[Structure 4]

In the mask manufacturing method of the structure 3, in the photomask, a semi-transmissive film is formed on the transparent substrate in the semi-transmissive portion and the light-shielding portion, and the light-shielding portion is on the semi-transmissive film. A light shielding film is formed.

[Structure 5]

In the reticle manufacturing method of the structure 3, in the reticle, a light-shielding film is formed on the transparent substrate, and a semi-transmissive film is formed on the light-shielding film, and the semi-transmissive portion is formed in the light-shielding portion. A semi-transmissive film is formed on the transparent substrate.

[Structure 6]

In the method of manufacturing a mask having the structure 3, the semi-transmissive portion has a smaller effective transmittance than the semi-transmissive film.

[Structure 7]

In the method of manufacturing a photomask having the structure 1 or the structure 2, a photomask for manufacturing a thin film transistor of a liquid crystal device is manufactured.

[Structure 8]

A pattern transfer method characterized in that exposure using the above-described exposure conditions is performed on the above-mentioned photoresist film using a photomask manufactured according to the photomask manufacturing method having the structure 1 or the structure 2.

[Structure 9]

For the photoresist film formed on the processed layer to be processed, a photomask having a predetermined transfer pattern, including a light transmitting portion, a light shielding portion, and a transmission, is used. The semi-transmissive portion of the partial exposure light is exposed under a predetermined exposure condition, and when the predetermined transfer pattern is transferred, and the photoresist pattern having a predetermined shape in the etching process is a hood, the photoresist film is used. The photomask has a predetermined transmittance value as a transmittance of the semi-transmissive portion, and the transmittance value is obtained by exposing the transfer pattern under an exposure condition similar to the exposure condition, according to the obtained effective transmittance. Decide.

[Structure 10]

The reticle having the structure 9 is characterized in that it has a semi-transmissive portion including a semi-transmissive film portion formed on the transparent substrate, and a transmissivity value of the semi-transmissive portion is greater than an intrinsic transmittance of the semi-transmissive film small.

[Structure 11]

A library of effective transmittance of a semi-transmissive portion, comprising: a light shielding portion, a light transmitting portion, and a semi-light transmitting portion, a pattern shape for semi-transmissive light, or a film material forming the light transmitting portion, or any film a plurality of test patterns having different semi-transmissive portions having different characteristics, performing exposure exposure using an exposure device that approximates a predetermined exposure condition, and the transmitted light patterns of the test patterns are obtained by a photographing device, and the transmitted light pattern data is obtained according to the obtained transmitted light pattern. And obtaining the effective transmittance of the semi-transmissive portion of the plurality of test patterns based on the transmitted light pattern data, and the characteristics of the semi-transmissive portion and the corresponding effective transmittance are arranged in accordance with a regular rule.

[Structure 12]

A library of effective transmittance of a semi-transmissive portion, comprising: a light shielding portion, a light transmitting portion, and a semi-light transmitting portion, a pattern shape for semi-transmissive light, or a film material forming the light transmitting portion, or any film Thick semi-transmissive features are not The same plurality of test patterns are set for a plurality of exposure conditions, and the plurality of exposure conditions are applied to perform test exposure. The transmitted light patterns of the test patterns are obtained by a photographing device, and a plurality of transmitted light pattern data are obtained according to the obtained transmitted light patterns. According to the transmitted light pattern data, the effective transmittance of the semi-transmissive portion of the test pattern is obtained under the exposure conditions, and the exposure condition, the characteristics of the semi-transmissive portion, and the corresponding effective transmittance are constant. Regular arrangement.

[Structure 13]

A predetermined transfer pattern including a light transmitting portion, a light blocking portion, and a semi-light transmitting portion that transmits a portion of the exposure light, wherein the pattern shape of the semi-light transmitting portion is determined according to the database having the structure 11 or 12, or The film material forming the light transmitting portion or the semi-transmissive portion of any film thickness has characteristics such that the semi-transmissive portion has a desired effective transmittance.

In the present invention, when the transmittance of the light-transmitting portion having a sufficiently wide area is 100%, the gray-scale portion has a predetermined amount of exposure light transmittance from 100% transmittance (for example, 40% to 60% or so, and in the gray scale hood having the gray scale portion, when the gray scale hood is exposed by the exposure device, the transmittance of the effective exposure light of the gray scale portion is due to the area of the pattern, the exposure device The resolution of the optical system used inside is different. That is, in the present invention, the effective transmittance is 100% (also wide enough) for the light-transmitting portion of the exposure light (wide enough for the applicable exposure conditions) under the exposure conditions of the gray scale hood. When the transmittance of the portion is 0%, the transmittance of the transmitted light of the gray scale portion is actually transmitted. For example, in the gray scale portion, semi-transparent having a specific value of transmitted light amount smaller than 100% (for example, 20% to 80%) is used. When the mask of the gray-scale portion formed by the film is exposed, the light transmittance of the semi-transmissive film portion adjacent to the portion of the light-shielding film is dimmed (exuded) without being completely analyzed by the resolution of the exposure device. The semi-transparent film portion of the infinite width formed by the film is low.

Further, in the present application, the gray scale hood formed of the semi-translucent film as described above is also referred to as a "semi-transmissive film type gray scale hood".

That is, when the semi-transmissive film type gray scale hood is actually used, the shape of the photoresist pattern formed as the gray scale portion is determined not as the transmittance of the semi-transmissive film but as a halo (exudation) under exposure conditions. The transmittance in the state is called the effective transmittance. The effective transmittance, in addition to the transmittance of the film itself, is also a transmittance as a result of affecting the resolution and pattern shape of the exposure apparatus. The semi-transmissive film forming portion becomes minute, and the influence of the adjacent light-shielding film is larger, and the effective transmittance is lowered. Further, the exposure light to be used is usually mixed with the wavelength of the i-line to the g-line, and among the exposure light, the light having a relatively large wavelength is controllable in the amount of light, and the effective transmittance is affected by the decrease in the resolution.

In the same manner, a light-shielding portion having a gray scale portion that reduces the amount of transmitted light (hereinafter referred to as "fine pattern gray scale shading" is provided by a light-shielding property having a light transmittance of less than the analysis limit under the exposure conditions or a fine pattern having a semi-translucent property. In the cover.), the transmittance under actual exposure conditions reflecting the resolution or pattern shape of the exposure device can also be used as the effective transmittance.

In the reticle manufacturing method according to the present invention, the step of obtaining the transmitted light pattern material, applying an approximate exposure condition of an exposure condition applicable when the reticle is applied (that is, using an exposure device that simulates an actual exposure condition), forming a pair The test hood of the predetermined test pattern is subjected to test exposure, and the transmitted light pattern of the test hood is obtained by the photographing device, and the transmitted light pattern data is obtained according to the obtained transmitted light pattern; and the step of obtaining the effective transmittance is performed according to the transmitted light pattern data. Obtaining a practical transmittance of the test pattern under exposure conditions; determining a pattern shape of the semi-transmissive portion including the photomask, a film material or a film thickness formed in a region including the semi-transmissive portion, according to an effective transmittance; Therefore, it is possible to evaluate the main mask of each of the main causes of the optical system of the exposure machine, the spectral characteristics of the light source, and the like, and it is possible to accurately determine the shape of the pattern and determine the film material or film thickness formed in the semi-transmissive portion. Further, the reflection characteristics of the photoresist used can also be evaluated by reflecting the mask.

Further, in the method for manufacturing a photomask according to the present invention, the test hood used in the step of obtaining the transmitted light pattern material has a light shielding portion, a light transmitting portion, and a semi-light transmitting portion, and includes a pattern shape of the semi-transmissive portion. Or a film material forming the light transmitting portion or a plurality of test patterns having different semi-transmissive portions having different film thicknesses, a pattern shape of the photomask, a film material formed in a region including the semi-transmissive portion, Or determining the film thickness of the above region, and understanding the relationship between the characteristics of the semi-transmissive portion and the effective transmittance corresponding to the characteristics of the semi-transmissive portion by using the plurality of transmitted light pattern data obtained by the plurality of test hoods Since it is performed according to the correlation of the grasp, the determination of the pattern shape of the semi-transmissive portion and the determination of the film material or film thickness formed in the semi-transmissive portion can be accurately performed.

The mask manufacturing method according to the present invention can be applied to the manufacture of a mask having a light shielding portion, a light transmitting portion, and a semi-light transmitting portion that forms a semi-transmissive film on a transparent substrate.

According to the method of manufacturing a mask of the present invention, it is possible to apply a semi-transmissive film to a semi-transmissive portion and a light-shielding portion, and to manufacture a mask for forming a light-shielding film on the semi-transmissive film in the light-shielding portion.

According to the photomask manufacturing method of the present invention, the light shielding portion can be applied to form a light shielding film on the transparent substrate, and a semitransparent film can be formed on the light shielding film, and in the semitransparent portion, a semitransparent film can be formed on the transparent substrate. The manufacture of a photomask of a light film.

The photomask manufacturing method according to the present invention can be applied to the manufacture of a photomask for manufacturing a thin film transistor of a liquid crystal device.

The reticle according to the present invention has a predetermined transmittance value as a transmittance of the semi-transmissive portion, and the transmittance value is obtained under the approximate exposure conditions of the exposure conditions to which the reticle is applied, according to the obtained effective transmission. Since the rate is determined, it is possible to accurately perform the determination of the pattern shape and the film material or the film thickness formed in the semi-transmissive portion, and perform the transfer of a good predetermined pattern.

The transmittance value herein may be a transmittance value of the semi-transmissive portion attached to the photomask as the photomask article.

Further, in the mask, the transmittance value of the semi-transmissive portion may be smaller than the intrinsic transmittance of the semi-transmissive film. The semi-transmissive portion is fine, and even if the effective transmittance of the semi-transmissive portion is not equal to the intrinsic transmittance of the semi-transmissive film, the mask can be accurately evaluated according to the present invention.

According to the pattern transfer method of the present invention, by the method for producing a mask of the present invention, it is possible to use a mask which accurately determines the pattern shape and determines the film material or film thickness formed in the semi-transmissive portion, on the photoresist film. The exposure is performed according to the exposure conditions.

The database of the effective transmittance of the semi-transmissive portion according to the present invention includes a light shielding portion, a light transmitting portion, and a semi-light transmitting portion, a pattern shape of the semi-transmissive portion, or a film material forming the light transmitting portion, or a plurality of test patterns having different thicknesses of semi-transmissive portions having different characteristics, and performing exposure exposure using an exposure device that reproduces predetermined exposure conditions, and the transmitted light patterns of the test hoods are obtained by a photographing device, and according to the obtained transmitted light patterns, Obtaining the transmitted light pattern data, according to the transmitted light pattern data, obtaining the effective transmittance under the exposure condition, and the optical reflecting the exposure machine can be evaluated because the characteristics of the semi-transmissive portion and the corresponding effective transmittance are arranged according to a certain regularity. The main cause of the system, the spectral characteristics of the light source, and the development characteristics of the photoresist, etc., can quickly determine the pattern shape having the desired effective transmittance and the film material or film thickness formed on the semi-transmissive portion. .

The database of the present invention can be recorded on paper or an electronic recording medium.

Further, according to the data sheet of the effective transmittance of the semi-transmissive portion of the present invention, a plurality of exposure conditions are set, and a plurality of transmitted light pattern data corresponding to the plurality of exposure conditions are obtained, and the exposure conditions are obtained based on the transmitted light pattern data. The effective transmittance, the exposure conditions, the characteristics of the semi-transmissive portion, and the corresponding effective transmittance are arranged according to a certain rule, and the determination of the pattern shape and the film material or film thickness for forming the semi-transmissive portion are further Accurate decisions are useful.

Therefore, according to the above-described database, if a mask having a predetermined transfer pattern including a light transmitting portion, a light blocking portion, and a semi-light transmitting portion that transmits a part of the exposure light is formed, the pattern shape of the semi-light transmitting portion can be correctly set, or Forming the film material of the semi-transmissive portion or the semi-transmissive portion of any film thickness to make The semi-transmissive portion can have a desired effective transmittance.

That is, in the present invention, when a photoresist film having a predetermined pattern is used for exposure of a photoresist film formed on a processed layer to be processed, the photoresist pattern is used for exposure under a predetermined exposure condition, and when the photoresist pattern is used as a light shield in the etching process, In the method of manufacturing the photomask of the photoresist film, it is possible to evaluate the main causes of the main causes of the optical system of the exposure machine, the spectral characteristics of the light source, the development characteristics of the photoresist, and the like, and it is possible to provide the fabrication of the formed mask. The method and the photomask are used to accurately determine the shape of the pattern and the film material or film thickness determined in the semi-transmissive portion. Further, the present invention can provide a pattern transfer method using the photomask. Moreover, the present invention can provide a useful database for the evaluation of the reticle.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments for carrying out the invention will be described.

[Summary of Photomask Manufacturing Method According to Present Invention]

According to the photomask manufacturing method of the present invention, the photoreceptor which forms a predetermined pattern on the transparent substrate is used, and the object to be transferred (the desired film is formed on the glass substrate or the like, covered with the photoresist film) is exposed using an exposure device. In the exposure apparatus, the pattern transferred to the object to be transferred by exposure is predicted by the light intensity distribution captured by the photographing device, and a method of manufacturing the mask is predicted based on this.

More specifically, it includes an exposure condition for manufacturing a content in the imitation exposure apparatus, an approximate pattern of the pattern transferred from the exposure to the object to be transferred in the exposure apparatus is captured by the photographing apparatus, or a simulator is used to quantitatively grasp the exposure apparatus The photoresist pattern formed by the exposure condition and the light intensity generated by the photographing device The association between the cloths, and using this association, speculates (simulates) the reticle to expose the reticle pattern formed. Further, the exposure apparatus is a device that transfers a pattern formed in a photomask to a transfer target under a constant exposure condition.

The imitation exposure conditions are approximate to the exposure wavelength. For example, when the exposure light should have a wavelength region, the exposure wavelength at which the light intensity is maximum is the same. Further, the imitation exposure conditions are approximated by an optical system. For example, the NA (number of openings) of the imaging system is slightly the same, or σ (consistency) is slightly the same. Here, the NA is abbreviated, and the case of ±0.005 is exemplified for the NA of the actual exposure machine. The σ is abbreviated, and the range of ±0.005 is exemplified for the σ of the actual exposure machine. Moreover, not only the imaging system, but also the NA of the illumination system is also slightly the same. Further, it is possible to apply an exposure condition of an optical system in which the NA of the photographing system is slightly the same and has almost the same σ.

In particular, in the present invention, there is a step of obtaining a material for transmitting light pattern, and a test device for forming a predetermined pattern is subjected to test exposure using an exposure device that reproduces an exposure condition that mimics an exposure condition, and the transmitted light pattern of the test hood is photographed. The device obtains and obtains the transmitted light pattern data according to the obtained transmitted light pattern; and obtains the effective transmittance step, and obtains the effective transmittance under the exposure condition according to the transmitted light pattern data.

In the present invention, the semi-transmissive portion transmits a portion of the portion of the exposure light. This portion includes a semi-translucent film formed on the transparent substrate, or a fine pattern having a size equal to or less than the analysis limit of the light-shielding film under the exposure conditions, and the fine pattern formed by the semi-transmissive film. Further, a case where the light transmitting portion sandwiched by the light shielding portion and having a size equal to or lower than the analysis limit function as the semi-light transmitting portion is included.

In the present invention, the transmittance pattern data is based on the obtained transmitted light pattern or a material formed by adding other information to the obtained transmitted light pattern.

For example, the change in the size of the region of the semi-transmissive portion (the width of the semi-transmissive portion sandwiched by the light-shielding portion, etc.) may be information on the change in the amount of transmission of the exposure light, or the amount and wavelength of the exposure light. The change may also be information on the change in the amount of transmission of the exposure light. Moreover, it is possible to add information on the photoresist processing conditions (development conditions, etc.) when the photoresist pattern is actually formed using the photomask.

In the transmitted light pattern data of the present invention, it is preferable to use a transmitted light pattern obtained by a plurality of transmission light patterns or a plurality of test patterns, which can be aggregated information.

Here, the test pattern formed in the test hood may be a pattern of any shape. Specifically, it may be the same pattern or a different pattern as the photomask (the photomask which is the object of the manufacturing method in the first aspect of the patent application). Most preferably, the stage change pattern shape or the like can be used in the following detailed description.

Further, similarly to the photomask described above, it is preferable to have a light transmitting portion, a light blocking portion, and a semi-light transmitting portion that transmits a part of the exposure light.

The effective transmittance is as described above, that is, the transmittance obtained under the exposure conditions in an actual exposure machine. In particular, in the reticle having the semi-transmissive portion, the ratio of the transmitted light of the transmissive portion of the transmissive portion (sufficiently wide) is transmitted in the semi-transmissive portion. The translucent portion, that is, the transmittance of the exposure light transmitted through the light transmitting portion under the above-described exposure conditions is 100%, and has a transmittance smaller than 100% (larger than 0) part. The semi-transmissive portion preferably has a transmittance of 20 to 60%. Therefore, the semi-transmissive portion is provided with a resist film having a thickness different from that of the portion corresponding to the light transmitting portion or the light blocking portion.

Then, the transmittance inherent to the film is the intrinsic transmittance of the film, and the amount of transmitted light which is an incident amount of the exposure light to the exposure light is large as the wavelength of the exposure light and the optical condition area of the exposure machine. In other words, the wavelength of the exposure light and the optical conditions of the exposure machine (the illumination system, the NA of the imaging system, σ, etc.) do not affect the light transmittance, and the effective transmittance is obtained by fixing the exposure wavelength in a film having a large area. It is equal to the intrinsic transmittance under the above exposure conditions.

On the other hand, for example, if the area of the film is small, it is affected by the other portions of the film (the adjacent light-shielding portion and the light-transmitting portion when the film-based semi-transmissive film is used), and the exposure light under exposure conditions. The effective transmittance is different from the inherent transmittance of the film.

Therefore, in the method of manufacturing the photomask, the photoresist pattern on the transfer target or the photoresist pattern thereof can be used as a light shield according to the light intensity distribution obtained by the photographing device, and the processed layer pattern size including the processing can be performed. Various analysis and evaluation of these shape changes and the like caused by fluctuations in the transmittance of the mask.

In the step of obtaining the effective transmittance of the test pattern, the effective transmittance of any portion of the test pattern can be obtained, and it is more preferable to obtain the effective transmittance of the semi-transmissive portion formed in the test pattern. For example, a portion sandwiched by parallel straight lines generated by the respective edges of the two light shielding portions (in this portion, a semi-transparent film may be formed) or a region including the above portion may be used. The field is a test light-shielding film that functions as a semi-transmissive portion. At this time, it is useful to obtain the effective transmittance of the above-mentioned light transmitting portion.

Further, since the transmittance corresponding portion of the light transmitting portion is not fixed under the above exposure conditions, for example, the effective transmittance of the center of the region sandwiched by the pair of parallel light shielding portions can be used as the effective transmittance of the semi-transmissive portion. . According to the effective transmittance obtained in this way, before determining the pattern of the photomask of the present invention, the shape of the region sandwiched by the edges of the pair of parallel light-shielding portions, the interval between the edges of the pair of parallel light-shielding portions, and the above-mentioned regions can be determined. The film material formed, or the film thickness.

Fig. 1 is a graph showing the effective transmittance of the center of the semi-transmissive portion sandwiched by the sides of a pair of parallel light-shielding portions. As shown in Fig. 1, when the width of the semi-transmissive portion sandwiched by the sides of the pair of parallel light-shielding portions is narrowed, the effective transmittance is lowered. Conversely, when the width of the semi-transmissive portion sandwiched by the sides of the pair of parallel light-shielding portions is widened, the effective transmittance is increased. Therefore, in the test exposure of the test hood, when the effective transmittance of the semi-transmissive portion is higher than the desired transmittance, the width of the semi-transmissive portion (the distance between the pair of parallel shading portions) can be narrowed. Correction. On the contrary, in the test exposure of the test hood, when the effective transmittance of the semi-transmissive portion is lower than the desired transmittance, the width of the semi-transmissive portion (the distance between the pair of parallel shading portions) can be changed. Wide correction. Further, the relationship between the width of the semi-transmissive portion and the effective transmittance changes as shown in Fig. 1 depending on the exposure conditions. Here, the film design of the semi-transmissive film type gray scale hood (the thickness of the semi-transparent film and the film material) is corrected, and the effective transmittance can be used as the desired transmittance.

Moreover, the reticle manufactured by the method of manufacturing the reticle includes not only the most The reticle of the final product, as well as the intermediate on the way to make the reticle. Further, in the reticle, not only the above-described semi-transmissive film type gray scale hood but also a fine pattern type gray scale hood is included.

The photomask of the present invention is, for example, manufactured as follows. That is, a blank mask that is sequentially stacked with a semi-transmissive film and a light-shielding film is prepared on the transparent substrate, and a photoresist pattern is formed in the region of the blank mask corresponding to the light-shielding portion and the semi-transmissive portion, and the light is formed The resist pattern serves as a hood to etch the exposed light-shielding film. Next, the light-shielding portion is formed by etching the exposed semi-transmissive film by using the photoresist pattern or the light-shielding film as a light-shielding mask. Next, a photoresist pattern is formed at least in a region where the light-shielding portion is intended to be formed, and the light-shielding film is formed by etching the exposed light-shielding film to form a semi-light-transmitting portion and a light-shielding portion. Therefore, on the transparent substrate, a light-shielding portion that forms a semi-transmissive portion from the semi-transmissive film, a light-shielding portion from the light-shielding film and the semi-transmissive film, and a light-transmitting portion can be obtained.

On the other hand, the photomask of the present invention can be produced by the following method. That is, a blank mask for forming a light-shielding film is prepared on the transparent substrate, and a photoresist pattern is formed in a region corresponding to the light-shielding portion of the blank mask, and the exposed light-shielding film is formed by etching the exposed light-shielding pattern as the light-shielding mask. A light shielding film pattern is formed. Next, after the photoresist pattern is removed, a semi-transmissive film is formed over the entire substrate. Then, a photoresist pattern is formed in a region corresponding to the semi-transmissive portion (or the semi-transmissive portion and the light-shielding portion), and the light-resisting portion is formed by etching the exposed semi-transparent film by using the photoresist pattern as a light-shielding mask. And a semi-transmissive portion. Therefore, on the transparent substrate, a light-shielding portion that forms a light-shielding portion and a light-transmitting portion from the semi-light-transmitting portion, the light-shielding film, and the semi-transmissive film may be obtained.

Moreover, it can also manufacture as follows, as another manufacturing method. In other words, in the blank mask on which the light-shielding film is formed on the transparent substrate, a photoresist pattern is formed in a region corresponding to the light-shielding portion and the light-transmitting portion, and the photoresist pattern is used as a light-shielding mask, and the exposed light-shielding film is exposed to expose A transparent substrate in the region of the semi-transmissive portion. Next, after removing the photoresist pattern, a semi-transmissive film is formed on the entire surface of the substrate, and a photoresist pattern is formed in a region corresponding to the light-shielding portion and the semi-transmissive portion, and the light-resisting pattern is used as a light-shield, and the semi-transparent light is exposed by etching. The film (and the light shielding film) can form a light transmitting portion, a light blocking portion, and a semi-light transmitting portion.

[Structure of Exposure Apparatus That Can Be Used in the Present Invention]

In the present invention, an exposure apparatus that mimics the exposure conditions of the exposure machine can be realized by an inspection apparatus having the structure shown in Fig. 2. In this inspection apparatus, the photomask 3 or the test hood is maintained by the reticle maintenance device 3a. The reticle maintaining device 3a is in a state of being slightly vertical with the main plane of the reticle 3 or the test hood, supports the lower end portion and the side edge portion of the reticle or the test hood, and tilts the reticle 3 or the test hood And remain fixed. The reticle maintaining device 3a can maintain a large size (for example, a main plane of 1220 mm (mm) × 1400 mm, a thickness of 13 mm) and a reticle 3 of various sizes in the reticle 3 . In other words, in the reticle holding device 3a, since the lower end portion of the reticle 3 whose main plane is slightly vertical is mainly supported, the lower end portion of the reticle 3 can be supported by the same supporting member even if the size of the reticle 3 is different.

Here, it is said to be slightly vertical, that is, the angle θ from the vertical as shown in Fig. 2 is within about 10 degrees. It is preferable to leave the vertical angle θ, preferably in the range of 2 to 10 degrees, and more preferably in the range of 4 to 10 degrees.

Thus, by using the mask holding device 3a supporting the tilt mask 3, During the process of maintaining the mask 3, it is possible to prevent the mask 3 from falling over and to stably maintain and fix the mask 3. Further, when the reticle 3 is kept completely vertical, the entire weight of the reticle 3 is concentrated on the lower end portion, which increases the possibility of damaging the reticle 3. By using the holding device 3a supporting the tilt mask 3, the weight of the mask 3 is dispersed over a plurality of support points, and damage of the mask 3 can be prevented.

Therefore, in the inspection apparatus, since the main plane of the photomask 3 maintains the mask 3 as described above, it is possible to suppress an increase in the installation area of the inspection apparatus, and it is possible to suppress the particles from falling onto the mask.

Thus, the inspection device has a light source 1 that emits a light beam of a predetermined wavelength. As the light source 1, for example, a halogen lamp, a metal halide lamp, a UHP lamp (ultra-high pressure mercury lamp) can be used.

Then, the inspection device has the illumination optical system 2, and the photomask 3 held by the maintenance device 3a guides the illumination light from the light source 1. This illumination optical system 2 has an aperture mechanism (open aperture) 2a in order to change the number of apertures (NA). Further, the illumination optical system 2 preferably has a field stop 2b for adjusting the irradiation range of the inspection light in the reticle 3. The inspection light that has passed through the illumination optical system 2 is irradiated to the mask 3 held by the mask holding device 3a.

The inspection light that has been irradiated onto the photomask 3 passes through the photomask 3 and enters the objective lens system 4. Since the objective lens system 4 has an aperture mechanism (open aperture) 4c, the number of apertures (NA) is variable. The objective lens system 4 may include a first group (analog mirror), for example, the inspection light incident through the mask 3 is incident, and the beam is added to infinity to become parallel light; and the second group (imaging mirror) 4b is used. The beam of the first group is imaged.

In this inspection device, due to the number of openings of the illumination optical system 2 and the object The number of openings of the mirror system 4 is variable, respectively, and the ratio of the number of openings of the illumination optical system 2 to the number of openings to the objective lens system 4, that is, the Σ value (σ: consistency) can be changed.

The light beam that has passed through the objective lens system 4 is received by the photographing device (photographic element) 5. This photographing device 5 takes an image of the photomask 3. For example, a photographing element such as a CCD (Charge Coupled Device) can be used as the photographing device 5.

Then, in the inspection apparatus, the image processing, the calculation of the captured image obtained by the photographing device 5, the comparison with the predetermined threshold value, the display, and the like are performed by a control device and a display device (not shown).

Further, in the inspection apparatus, for a photographed image obtained by using a predetermined exposure light or a light intensity distribution obtained thereby, the control device performs a predetermined calculation, and photographing can be performed under the condition of using other exposure light. Image, or, light intensity distribution. For example, in the inspection apparatus, when the light intensity distribution is obtained in the exposure conditions in which the intensity of the g line, the h line, and the i line are the same, the intensity ratio of the g line, the h line, and the i line can be determined to be 1:2:1. Light intensity distribution at the time of exposure under exposure conditions. Therefore, the inspection apparatus also includes the type of the illumination light source used in the exposure apparatus, the individual difference, and the intensity variation per wavelength caused by the change in the illumination used in the exposure apparatus, and can evaluate the exposure conditions in the exposure apparatus actually used for reproduction. When the residual film amount of the desired photoresist is also assumed, the most appropriate exposure conditions that can be achieved can be easily obtained.

In the reticle manufacturing method according to the present invention, the illuminating optical system 2 and the objective lens system 4 and the photographic apparatus 5 are sandwiched between the illuminating optical system 2 and the photographic apparatus 5, and the reticle 3 (here, the test hood) which is slightly vertical to the main plane is sandwiched. In confrontation In the position where the optical axes of the two are aligned, the inspection light is irradiated and received. These illumination optical systems 2, the objective lens system 4, and the imaging device 5 can be moved by a mobile operation device (not shown). The moving operation device allows the illumination optical system 2 to mutually move the optical axes of the objective lens system 4 and the imaging device 5 in parallel with each other while moving the main plane of the mask 3. In the inspection apparatus, by providing such a moving operation device, even when the large reticle is inspected, it is not necessary to move the reticle 3 in the parallel direction on the principal plane, and the main plane of the reticle 3 can be continuously inspected continuously, and Check the desired area on the main plane.

Therefore, in the inspection apparatus, the objective lens system 4 and the photographing apparatus 5 can be moved in the optical axis direction by the control means, and the pair of the objective lens system 4 and the photographing apparatus 5 can independently change the relative to the mask 3. distance. In the inspection apparatus, the objective lens system 4 and the photographing apparatus 5 can be independently moved in the optical axis direction, and photographing in a state in which the exposure apparatus that performs exposure using the mask 3 can be performed can be performed. Further, by offsetting the focal length of the objective lens system 4, the imaging device 5 can capture the hazy image of the reticle 3. By evaluating such a hazy image, as will be described later, the performance of the gray scale hood and the presence or absence of defects can be judged.

Then, the control device of the inspection device controls the field diaphragm 2a and the diaphragm mechanism 2b of the illumination optical system 2, the diaphragm mechanism 4c for the objective lens system 4, and the movement operation device. In the above-described control device, in the method of manufacturing a mask using the inspection device, the number of apertures (NA) of the objective lens system 4 and the threshold value (the ratio of the number of openings of the illumination optical system 2 to the number of apertures of the objective lens system 4) are maintained. Illumination optics by moving the operating device under a predetermined value The system 2, the objective lens system 4, and the photographing device 5 are mutually independent in the optical axis direction while being moved in the planar direction on the principal plane of the mask 3 maintained by the mask holding device in a state where the optical axes are aligned. The operation is performed on the objective lens system 4 and the photographing device 5.

[Photomask manufactured in accordance with the present invention]

The reticle manufactured by the reticle manufacturing method according to the present invention includes not only the completed reticle but also an intermediate in the middle of manufacturing the reticle as a product, and the type and use of the reticle are not particularly limited.

In other words, in the above-described inspection apparatus, a light-shielding film containing Cr (chromium) or the like as a main component is formed on the main surface of the transparent substrate, and the light-shielding film is formed by lithography to form a predetermined pattern, not only to form a light-shielding portion and to transmit light. In the binary mask of the pattern of the portion, a gray scale hood having a light shielding portion, a light transmitting portion, and a gray scale portion on the main surface of the transparent optical substrate can also be inspected. In this inspection apparatus, when such a gray scale hood is inspected, a particularly remarkable effect can be obtained.

Therefore, in this inspection apparatus, when the reticle for FPD manufacturing is inspected, there is a remarkable effect, and the reticle for manufacturing a liquid crystal device is also most suitable for the manufacture of a thin film transistor (hereinafter referred to as "TFT"). Used reticle. Because in these fields, gray scale hoods are often used due to manufacturing efficiency and cost, and the size of the gray scale portion is extremely fine and must be refined.

Further, the gray scale portion includes both a semi-transmissive portion (referred to as a "semi-transmissive film type") in which a semi-transmissive film is formed, and a gray scale portion generated by a fine pattern having an analysis limit or lower under exposure conditions (referred to as a gray scale portion). Make a "fine pattern"). That is, the gray scale hood includes both: a photomask (semi-transmissive film type gray scale hood) having a gray scale portion, and the amount of transmitted light in the gray scale portion is smaller than 100% (for example, 40 to 60%). a translucent film; and a photomask (fine pattern gray scale hood) having a gray scale portion, and having a light-shielding property or a semi-transparent fine pattern having an analytical limit or lower under exposure conditions, and reducing transmission The amount of light.

[About grayscale hood]

Here, a gray scale hood to be inspected in the inspection apparatus for the reticle according to the present invention will be described.

A liquid crystal display device (Liquid Crystal Display (hereinafter referred to as "LCD") having a TFT is widely used because it is easy to be thinner and consumes less power than a cathode ray tube (CRT). The LCD has a TFT substrate in which a TFT structure is arranged in each pixel arranged in a matrix, and a color filter in which a pixel pattern of red (R), green (G), and blue (B) is arranged for each pixel to be a liquid crystal. Layers are in a structure in which they overlap each other. Such an LCD has a large number of manufacturing steps, and the light is a TFT substrate, and is manufactured using 5 to 6 photomasks.

In such a case, the manufacture of a TFT substrate is performed using four masks. In this method, a gray scale hood having a light shielding portion, a light transmitting portion, and a gray scale portion is used, thereby reducing the number of hoods used. In Figs. 3 and 4, an example of a manufacturing procedure of a TFT substrate using a gray scale hood is shown.

First, as shown in FIG. 3(A), a metal film for a gate electrode is formed on a glass substrate 201, and an electrode 202 is formed by a lithography imaging step using a photomask. Thereafter, a gate insulating film 203, a first semiconductor film (a-Si) 204, a second semiconductor film (N+a-Si) 205, a source-drain metal film 206, and a positive-type photoresist film 207 are formed.

Next, as shown in (B) of FIG. 3, the use of the light-shielding portion 101 is used. The gray scale hood 100 of the light portion 102 and the gray scale portion 103 exposes the positive resist film 207 and forms an image to form the first photoresist pattern 207A. The first photoresist pattern 207A covers the TFT channel portion forming region, the source drain forming region, and the data line forming region, and the portion covering the TFT channel portion forming region is thinner than the portion covering the source drain forming region.

Next, as shown in FIG. 3(C), the first photoresist pattern 207A serves as a light shield to etch the source/deuterium metal film 206 and the second and first semiconductor films 205 and 204. Next, as shown in FIG. 4(A), the entire first photoresist pattern 207A is reduced by oxygen etching, and the thin photoresist film on the channel portion forming region is removed to form the second photoresist pattern 207B. Thereafter, as shown in FIG. 4(B), the second photoresist pattern 207B serves as a light shield, and the source/deuterium metal film 206 is etched to form source/drain electrodes 206A and 206B, and second semiconductor film 205 is etched second. . Finally, as shown in FIG. 4(C), the remaining second photoresist pattern 207B is peeled off.

As shown in Fig. 5, the gray scale hood 100 used herein has light blocking portions 101A and 101B corresponding to the source/drain electrodes, a light transmitting portion 102, and a gray scale portion 103' corresponding to the TFT channel portion. The gray scale portion 103' is a region formed by the light-shielding pattern 103A composed of a fine pattern having a lower limit than the limit under the exposure conditions of the large-screen LCD exposure apparatus using the gray scale hood 100. The light-shielding portions 101A and 101B and the light-shielding pattern 103A are generally formed of a film of the same thickness made of the same material such as a chromium or chromium compound. The resolution limit of the large-sized LCD exposure apparatus using the above-described gray scale hood is about 3 μm (micrometer) in the stepwise exposure apparatus and about 4 μm in the mirror projection type exposure apparatus. Therefore, in the gray scale portion 103', the pitch of the transmissive portion 103B is wide and covered. The line width of the light pattern 103A is, for example, less than 3 μm below the analysis limit under the exposure conditions of the exposure apparatus.

In the design of the fine pattern type gray scale portion 103', a fine pattern having a semi-transmissive (gray scale) effect between the light shielding portions 101A, 101B and the light transmitting portion 102 is formed into a line and a pitch type, or It is a point (spot) type, or a choice of other patterns. Further, in the case of the line and pitch type, the number of lines, the ratio of the portion through which the light is transmitted to the portion of the light-shielding portion, and the design of the overall transmittance are considered, and a lot of redesign must be considered. Further, in the manufacture of the gray scale hood, the management of the center value of the line width and the management of the line width in the reticle are extremely difficult production technical requirements.

Thus, up to now, it has been proposed that the gray scale portion is formed of a semi-translucent film. By using a semi-transmissive film in the gray scale portion, the amount of exposure generated by the gray scale portion is reduced, and half-gray exposure can be performed. Further, by using a semi-translucent film in the gray scale portion, it is sufficient to review the total transmittance in the design, and in the manufacture of the gray scale mask, it is considered that the film type of the semi-transparent film is selected. (Film material) and film thickness, you can produce grayscale hood. Therefore, in the manufacture of the gray scale hood of the semi-transmissive film, it suffices to control the film thickness of the semi-transmissive film, and there is a view that it is relatively easy to manage. Further, when the TFT channel portion is formed by the gray scale portion of the gray scale hood, if it is a semi-transmissive film, the pattern etching can be easily performed by the lithography imaging step, so that the shape of the TFT channel portion can also be formed into a complicated shape.

A gray scale hood of a semi-transmissive film type, for example, can be manufactured as follows. Here, the pattern of the TFT substrate will be exemplified. This pattern, as described above, is formed by a light-shielding portion 101 formed by a pattern corresponding to the source and the drain of the TFT substrate. The gray scale portion 103 formed by the pattern of the passage of the TFT substrate and the light transmitting portion 102 formed around the patterns are formed.

First, a blank hood in which a semi-transmissive film and a light-shielding film are sequentially formed on a transparent substrate is prepared, and a photoresist film is formed on the blank hood. Next, pattern drawing is performed, and a photoresist pattern is formed in the area of the light-shielding part and the gray-scale part of a corresponding pattern by imaging. Next, by etching by an appropriate method, the light-shielding film of the region corresponding to the light-transmitting portion where the photoresist pattern is not formed and the semi-transmissive film of the lower layer thereof are removed to form a pattern.

Therefore, the light transmitting portion 102 is formed, and at the same time, the light shielding portion 101 of the pattern is formed with the light shielding pattern of the region corresponding to the gray scale portion 103. Therefore, after the remaining photoresist pattern is removed, a photoresist film is formed on the substrate, pattern drawing is performed, and a photoresist pattern is formed on a region corresponding to the light-shielding portion 101 of the pattern by image formation.

Next, only the light-shielding film of the region where the gray-scale portion 103 of the photoresist pattern is not formed is removed by appropriate etching. Thereby, the gray scale portion 103 generated by the pattern of the semi-transmissive film is formed, and at the same time, the pattern of the light shielding portion 101 is formed.

[About the inspection of grayscale hood]

For the inspection of defects and performance in the gray scale hood as described above, it is necessary to carry out a simulation reflecting actual exposure conditions, and to evaluate the presence or absence of defects and the performance of the defects.

In the gray scale hood, the pattern shape formed on the hood affects the thickness of the photoresist film and the shape of the photoresist film formed by exposure using the hood. For example, it is necessary to evaluate not only the planar pattern shape but also whether the light transmittance of the gray scale portion is within an appropriate range, and the boundary between the gray scale portion and the light shielding portion is protruded. (clear or dizzy) how.

In particular, in the case of a gray scale hood having a gray scale portion formed by a fine pattern, when the photomask is actually exposed, the fine pattern is not analyzed, and the degree of transmittance which is substantially uniform is in a non-analytical state. use. In the manufacturing process of the hood or during the pre-shipment phase, it is more necessary to check this state during the stage of defect correction.

By reducing the amount of exposure light in the transmission gray scale portion and reducing the amount of exposure of the photoresist in this region, the inspection device can be used to selectively change the film thickness of the photoresist with high precision by approximating the actual exposure conditions. Step mask inspection.

Therefore, by using the data acquired in the inspection apparatus, the optical conditions (the conditions which are substantially equal to the optical conditions of the exposure apparatus to be used) are appropriately designed, and if the pattern is appropriately formed, as shown in FIG. 6, The fine pattern formed by the gray scale portion 103' is a non-analytical (low resolution) state having a substantially single concentration, similarly to the state which will be produced during actual exposure. The concentration of this portion shows the "effective transmittance" of this portion when the gray scale mask is used, thereby determining the residual film amount of the photoresist film formed by the gray scale portion 103'. On the other hand, if the design does not form a pattern in a predetermined shape or size in the manufacturing process, the concentration of the semi-transmissive portion or the shape of the gray-scale portion 103' may be displayed as described above. The state in which the states are different can be judged based on the comparison with the normal state.

Therefore, when the inspection device inspects the gray scale hood, the exposure conditions are almost the same as those actually applied to the mask, if it appears under various conditions. As with the appropriate non-analytical portions described above (i.e., the appearance of gray portions), the performance of the reticle can be said to be sufficient.

Further, when a photographic image is obtained in the above-described non-analytical state, it is necessary to perform a more appropriate calculation to evaluate the sharpness of the boundary portion between the channel portion and the source drain portion, and it is also possible to predict the three-dimensional shape of the reticle.

Therefore, the inspection apparatus according to the present invention can be advantageously applied to inspection of a mask having a gray scale portion formed by a fine light-shielding pattern having an analysis limit or less in actual exposure conditions.

In this case, the mask 3 having the fine pattern having the analysis limit or less is an inspection target, and is provided in the inspection device, for example, the number of openings of the objective lens system 4 and the number of openings (the number of openings of the illumination optical system 2 is opposite to the opening of the objective lens system 4). The ratio of the number is a predetermined value, and the position of the objective lens system 4 is appropriately adjusted in the optical axis direction, and an image of a non-analytical state of a fine pattern is obtained on the imaging surface in the imaging device 5. Thus, the captured image data is processed by the calculation device, whereby the light intensity distribution of the hood pattern can be obtained. Based on the shape of the photographic image and the light intensity data in the predetermined evaluation point, the performance of the reticle 3 and the presence or absence of the defect can be evaluated.

Further, when the above-described effective transmittance is quantified, for example, the peak of the transmitted light intensity distribution curve in the lower diagram of Fig. 6 can be used. This is because the photoresist residual film value of the semi-transmissive portion when the photoresist pattern of the positive photoresist is formed on the transfer target by using the above-described grayness hood.

[About testing hoods]

In the photomask manufacturing method of the present invention, the test hood 11 as shown in Fig. 7 is used.

The hood 11 is tested, and in the reticle inspection using the above-described inspection device, the mediation is centered to accurately and quickly integrate the optical conditions with the optical device. In addition, or instead, the spectral sensitivity of the photoresist film, the spectral sensitivity characteristics of the photographing device, and the like also include conditions that are impossible to integrate with the conditions between the exposure devices, and mediate between the inspection device and the exposure device. Or, the correlation between the inspection result and the result of the photoresist pattern formation by the exposure is introduced. If the correlation can be quantitatively grasped, the offsetting parameter can be calculated, and then, if the parameter is reflected in the mask inspection result to be inspected, the correct exposure result can be estimated. Specifically, by the manufacturing method of the present invention constituted by, for example, the test hood 11, the basic characteristics are matched with the exposure conditions of the exposure apparatus in the exposure conditions of the inspection apparatus, and then, the individual differences of one exposure apparatus, and The conditions caused by the processes other than the exposure device are different, and the conversion coefficient can be grasped by using the inspection step of the test hood 11.

In the test hood 11, as shown in (A) of FIG. 7, for example, on the substrate of 800 mm × 920 mm, the same test pattern 12 is arranged in a matrix in the X-axis direction and the Y-axis direction, respectively. Each of the test patterns 12 has a unit pattern row 13 having a line arranged in the X-axis direction and the Y-axis direction as shown in (B) of FIG. Other suitable test patterns can also be configured in the remaining sections. For example, in (B) of Fig. 7, the position reference mark 14 is disposed on the peripheral portion, and the general resolution pattern 15 is disposed at the center portion.

In the test pattern 12 of the present invention, each unit pattern line 13 may be arranged in a plurality of unit patterns having the same number. However, as shown in FIG. 8, for example, it is preferable to arrange a plurality of different unit patterns which are useful in an evaluation step to be described later. Column 13-1 (wedge pattern). Here, in the example of display, the unit pattern row 13-1 (wedge pattern) is arranged in the X direction by 21, and in each unit pattern row 13-1, the shape is changed to the 21st stage (a~u) in the Y direction. In other words, each unit pattern line 13 is also good in the X direction or in the Y direction, and varies in accordance with a certain rule in accordance with the arrangement order.

Each unit pattern row 13-1 is formed of a light shielding film. In the unit pattern row 13-1 of FIG. 8, in the Y-axis direction indicated by "a~u", the light-transmitting portion is sandwiched between the pair of light-shielding portions 81 whose width is changed stepwise. The vertical line (light-shielding line) 82 formed is a pattern of arranged lines and pitches. In the unit pattern row 13-1, the pair of light blocking portions 81 on both sides are the same in the X-axis direction indicated by "1 to 21" in (A) of Fig. 8 The line width of the light-shielding line 82 formed in the central light-transmitting portion is thinned at a constant pitch in the X-axis direction toward "1 to 21".

Further, each unit pattern row 13-1 may be formed of a light shielding film and a semi-transmissive film. At this time, the unit pattern row 13-1 is sandwiched between the pair of light shielding portions whose width steps are changed, and forms a pattern of the semi-transmissive film. That is, the region where the semi-transmissive film is formed is a region (semi-transmissive portion) sandwiched by the edges of the pair of parallel light-shielding portions.

By arranging the unit pattern row 13-1 described above, as shown in (B) of FIG. 8, it is possible to approximate the mask in which the transmittance of the gray scale portion sandwiched between the light shielding portions 81 and 81 is gradually increased. For example, in a gray scale mask for forming a channel portion in a thin film transistor, a form in which the transmittance of the gray scale portion is gradually changed can be approximated.

On the other hand, in each unit pattern row 13-1, "a~u" is attached in the Y direction, and the line widths of the light shielding portions 81, 81 on both sides gradually become smaller. E.g, In the gray scale mask for forming the channel portion in the thin film transistor, as shown in (B) of Fig. 8, the width of the channel portion can be approximated. Here, for the reason described later, the line width variation pitch of the pair of light shielding portions 81 and 81 in each unit pattern row 13-1 is preferably equal to the line width variation pitch of the central light shielding line 82.

On the other hand, in the unit pattern row 13 thus arranged, the influence of the line width (CD) variation of the hood on the transfer to the object to be transferred can be evaluated by observation and evaluation in the oblique direction. For example, the arrangement of "a1, b2, c3, ..." changes the pattern shape with a certain rule. This rule is that the central shading line 82 is tapered at a constant pitch, and the line widths of the light shielding portions 81 and 81 on both sides are also Thinner at a certain pitch. The line width (CD) variation of the reticle caused by various factors such as factors in the mask manufacturing step can be approximated (the linearity of the line width becomes larger or smaller).

Therefore, when the photomask manufacturing method according to the present invention is used, the light intensity analysis obtained by the inspection apparatus and the photoresist pattern on the transferred body obtained by performing exposure using the same test mask are used. The correlation between them can be grasped in the relationship with the change of the shape of each pattern.

Further, as shown in (B) of FIG. 7, the two unit pattern rows 13 are arranged at an angle of 90 in the X direction and the Y direction in the test hood 11. It is possible to evaluate an electronic component such as a liquid crystal panel, and the resolution of the pattern in the X direction and the Y direction which are generated at the time of manufacture is not uniform. For example, if the difference in resolution is generated in the scanning direction of the exposure device and the direction perpendicular thereto, the difference state of such resolution can be evaluated.

In addition, in this case, the test hood 11 is described as the unit pattern row 13-1, and as shown in Fig. 8, the light-transmitting portions sandwiched by the pair of light-shielding portions 81 and 81 whose width changes stepwise are provided with a light-shielding film. The pattern of the line and the pitch of the shading line 82 (wedge pattern) is produced, but the test hood of the present invention is not limited thereto, and different test patterns, as shown in FIGS. 9 and 10, are shown in FIG. The unit pattern 13-2 has a square frame-shaped light transmitting portion and a square frame-shaped light blocking portion formed in the light transmitting portion, and the four directions can be evaluated in one unit pattern 13-2. The unit pattern 13-3 shown in Fig. 10 has a frame-shaped light-transmitting portion having a regular octagonal shape and a frame-shaped light-blocking portion having a regular octagonal shape formed in the light-transmitting portion, and can be evaluated in one unit pattern 13-3. 8 directions.

Further, as a different form, a semi-transmissive film is formed in a portion sandwiched between the pair of light-shielding portions 81 and 81 whose widths of the test pattern are changed in a stepwise manner in FIG. 8 (the purpose of reducing the transmittance of the light-transmitting portion) The set film) can also be used as a unit pattern. At this time, using this test hood, it is possible to evaluate a gray scale hood having a gray scale portion forming a semi-transmissive film. The gray scale hood for TFT fabrication in which the semi-transmissive film is disposed can be approximately equivalent to the portion of the channel.

[About the spectral characteristics of inspection light (1)]

Thus, as the light source 1 in the inspection apparatus, the exposure light in the exposure apparatus that performs exposure using the inspected mask 3 is the same, and it is preferable to use a light source that emits inspection light having a slightly equal wavelength distribution.

Specifically, the inspection light, as shown in (A) of FIG. 11, includes at least one of a g line (436 nm (nanometer)), an h line (405 nm), and an i line (365 nm), or Containing all of these wavelength components, or it can be The combined light of any two or more of these wavelength components is mixed. In general, when a large hood for FPD manufacturing is exposed, since the synthesized light of these wavelengths is used as the exposure light, it is also preferable in the inspection apparatus to apply the synthesized light in a desired light intensity ratio, depending on the actual use. The light source characteristics of the exposure device determine the respective wavelength components. That is, according to the simulation result produced by the aforementioned test hood, the spectral characteristics of the light source of the inspection device can be made into the characteristics of the light source according to the exposure device actually used.

Then, the inspection light is transmitted through the wavelength selection filter 6 such as an optical filter, and the mixture ratio of the respective wavelength components on the mask 3 is adjusted by irradiating the mask 3. As shown in (B) of Fig. 11, a filter having a characteristic of cutting a light beam of a predetermined wavelength or less or a predetermined wavelength or more can be used as the wavelength selection filter 6.

In this inspection apparatus, the wavelength distribution of the inspection light emitted by the light source 1 is the same as or the same as the wavelength distribution of the exposure light in the exposure apparatus, and an inspection reflecting the actual exposure conditions can be performed. That is, because of exposure light, there may be cases where a defect is considered as a normal pattern in an exposure apparatus under white light, and conversely, a person who is not regarded as a defect under white light may not be used as an exposure apparatus in an exposure apparatus. The case of normal pattern processing.

Further, in the inspection apparatus, as shown in (C) of FIG. 11, it is possible to selectively use the first filter having a characteristic of transmitting only the g line emitted from the light source 1, and having only the light source 1 transmitted. The second filter having the characteristic of the h-line and the third filter having the characteristic of transmitting only the i-line emitted from the light source 1 are used as the wavelength selective filter.

At this time, the imaging device 5 is obtained when the first filter is used. The obtained light intensity data dg, the light intensity data dh obtained by the imaging device 5 when the second filter is used, and the light intensity data di obtained by the imaging device 5 when the third filter is used, therefore. Each of the light intensity data dg, dh, and di is subjected to a predetermined weighting, and the light intensity data obtained by mixing the light beams of the g line, the h line, and the i line with the light beam 3 at a predetermined intensity ratio can be calculated.

The weighting of each of the light intensity data dg, dh, and di, for example, assuming that the intensity ratio of the g line, the h line, and the i line in the light beam from the light source 1 of the inspection device is [1.00: 1.20: 1.30], and from the exposure device In the exposure light of the light source, when the intensity ratio of the g line, the h line, and the i line is [1.00:0.95:1.15], the coefficient fg to which dg should be multiplied is 1.00, and the coefficient fh to which dh should be multiplied is 0.95/1.20 (=0.79). The coefficient fi of the di should be multiplied by 1.15/1.30 (=0.88).

The added data, that is, [fgdg+fhdh+fidi], is a display material of the light intensity distribution obtained when the exposure light is irradiated onto the reticle 3 in the exposure apparatus. Further, by using the control device as the calculation device, the above-described calculation can be performed by the control device.

[About the spectral characteristics of inspection light (2)]

The inspection light emitted from the light source 1 of the inspection device, even if it has a wavelength distribution different from the exposure light of the exposure device, can simulate the exposure state in the exposure device as described below.

Further, according to the operation described below, the spectral characteristics of the light source of the inspection device, the spectral characteristics of the light source of the exposure device, and the spectral sensitivity characteristics of the photoresist are integrated, and the "exposure exposure" using the test hood is performed. The comparison between the test pattern data and the "light transmission test pattern data" allows the offset parameters at the time of mask inspection to be obtained more quickly and appropriately, and the mask inspection can be performed easily and accurately.

In the inspection apparatus, as described above, it is possible to selectively use a first filter having a characteristic of transmitting only the g line emitted from the light source 1 and having a characteristic of transmitting only the h line emitted from the light source 1 . The 2 filter is a third filter having a characteristic of transmitting only the i-line emitted from the light source 1 as a wavelength selective filter.

Then, using the test hood 11, as shown in Fig. 12, the first reference intensity data Ig obtained by the imaging device 5 when the first filter is used and the imaging device 5 obtained when the second filter is used are obtained. The second reference intensity data Ih and the first reference intensity data Ii obtained by the imaging device 5 when the third filter is used. The spectral data distribution of the reference data Ig, Ih, Ii light source 1, the spectral sensitivity distribution of the imaging device 5, and the spectral transmittance of each filter are multiplied by the optical elements of the inspection device that transmit the inspection light from the light source. The result of the spectral transmittance.

The spectral distribution of the light source 1, the spectral sensitivity distribution of the photographing device 5, and the spectral transmittance of each optical element are not the same for the wavelength. Therefore, the defective imaging pattern has a different pattern depending on the wavelengths of the respective inspection lights (g line, h line, and i line) used for photographing. When these patterns are interrupted with a certain critical value, they are considered to be different patterns.

Then, the first to third reference intensity data Ig, Ih, and Ii are mutually equal levels, and first to third coefficients α, β, and γ of the respective reference intensity data Ig, Ih, and Ii are obtained first. That is, as shown in Fig. 12, each system is obtained. The numbers α, β, and γ are obtained by multiplying the first reference intensity data Ig by the first coefficient α, the second reference intensity data Ih by the second coefficient β, and the third reference intensity data Ii by the third coefficient. The result of γ becomes equal. Here, the equal levels, that is, for example, the peak intensities of the respective reference intensity data Ig, Ih, and Ii are equal to each other.

In the inspection apparatus, the first to third coefficients α, β, and γ which make the respective reference intensity data Ig, Ih, and Ii equal to each other are obtained in advance, and the coefficients α, β, and γ are used by the user who uses the inspection device. grasp.

Then, when the mask for the inspection target is inspected, the first filter is used to obtain the first light intensity data Jg from the imaging device 5, and the second filter is used to obtain the second image from the imaging device 5 using the second filter. The light intensity data Jh and the third light intensity data Ji are obtained from the imaging device 5 using the third filter.

Next, the first light intensity data Jg is multiplied by the first coefficient α, the second light intensity data Jh is multiplied by the second coefficient β, and the third light intensity data Ji is multiplied by the third coefficient γ to correct the spectral distribution of the light source 1, The influence of the spectral sensitivity distribution of the imaging device 5 and the spectral transmittance of each optical element of the inspection device, and the light intensity data corresponding to the exposure state when the photoresist is exposed to the photoresist of the exposed object is obtained [α Jg, β Jh, γ Ji].

As described above, the above-described calculation using the control device as the calculation device can be performed by the control device.

Further, when the spectral characteristics of the exposure apparatus, that is, the spectral distribution of the light source of the exposure apparatus and the spectral transmittance of each optical element of the exposure apparatus, the coefficients u, v, and w corresponding to these spectral characteristics can be determined first. For example, find g The h line intensity (for example, 0.9104) and the intensity of the i line (for example, 1.0746) when the intensity of the line is 1.0, and the intensity ratio of 1 (for example, 0.335:0.305:0.360) can be used as the coefficients u, v, and w. .

Then, the coefficients corresponding to the spectral characteristics of the exposure devices are multiplied by the first to third light intensity data, whereby the exposure state when the photoresist is exposed to the photoresist by the exposure device can be more accurately obtained. Light intensity data [u α Jg, v β Jh, w γ Ji].

Further, when the spectral sensitivity characteristic (absorption spectrum) of the photoresist is known, the coefficients x, y, and z corresponding to the spectral sensitivity characteristics can be determined first. For example, the absorption amount of the h-line (for example, 1.6571) and the absorption amount of the i-line (for example, 1.8812) when the absorption amount of the g-line is 1 are obtained as the coefficients x, y, and z, and the total absorption ratio of 1 can be used (for example, , 0.220: 0.365: 0.415).

Then, the coefficient corresponding to the spectral characteristic is multiplied by the first to third light intensity data, whereby the light intensity corresponding to the exposure state when the photoresist is exposed to the photoresist by the exposure device can be more accurately obtained. Data [x α Jg, y β Jh, z γ Ji] (or [xu α Jg, yv β Jh, zw γ Ji]). The above-described calculation can also be performed via the control device using the control device as the calculation device.

[Pattern transfer method]

When a photomask for manufacturing a liquid crystal device is manufactured, in a generally recognized manufacturing step, it is possible to quickly manufacture a photomask for manufacturing a liquid crystal device which is required to sufficiently correct defects by an inspection step including the above-described photomask manufacturing method of the present invention.

In the present invention, the light produced by the reticle manufacturing method of the present invention In the hood, in particular, in the reticle manufacturing method according to the present invention, an optical element formed on the layer to be processed is exposed using a photomask having a confirming performance by using an exposure device, whereby an electronic component can be manufactured.

Therefore, good yield can be achieved and the desired performance for electronic components can be stabilized in a short period of time.

[Database according to the present invention]

According to the database of the present invention, the database of the effective transmittance of the semi-transmissive portion has a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion as described above, and the pattern shape of the semi-transmissive portion or the formation of the above-mentioned transparent The film material of the light portion or a plurality of test hoods having different semi-transmissive portions having different film thicknesses are subjected to test exposure using an exposure device that reproduces predetermined exposure conditions, and the transmitted light of the test hoods is obtained by the image capturing device. The pattern obtains the effective transmittance of the semi-transmissive portion of the plurality of test hoods according to the obtained transmitted light pattern, and the characteristics of the semi-transmissive portion and the corresponding effective transmittance are arranged according to a predetermined rule.

By using this database, it is possible to evaluate the main causes of the main causes of the optical system of the exposure machine, the spectral characteristics of the light source, and the development characteristics of the photoresist, and the shape of the pattern and the formation of the semi-transmissive portion. The precise determination of the membrane material, or membrane, becomes easy.

Further, in the database, a plurality of exposure conditions are set, and a plurality of transmitted light pattern data corresponding to the plurality of exposure conditions are obtained, and based on the transmitted light pattern data, the semi-transmissive portion of the test hood under exposure conditions is obtained. The effective transmittance, the exposure conditions, the characteristics of the semi-transmissive portion, and the effective transmittance corresponding thereto can be arranged according to a certain rule. At this time, this capital The library is useful for determining the shape of the pattern and for a more accurate determination of the film material or film thickness formed on the semi-transmissive portion.

1‧‧‧Light source

100‧‧‧ Grayscale hood

101‧‧‧Lighting Department

101A‧‧‧Lighting Department

101B‧‧‧Lighting Department

102‧‧‧Transmission Department

103‧‧‧ Grayscale Department

103’‧‧‧ Grayscale Department

103A‧‧‧ shading pattern

103B‧‧‧Transmission Department

11‧‧‧Test hood

12‧‧‧Test pattern

13‧‧‧Unit pattern column

13-1‧‧‧Unit pattern column

13-2‧‧‧Unit pattern

13-3‧‧‧Unit pattern

14‧‧‧Location reference mark

15‧‧‧ pattern

2‧‧‧Lighting optical system

201‧‧‧ glass substrate

202‧‧‧electrode

203‧‧‧gate insulating film

207‧‧‧positive photoresist film

204‧‧‧1st semiconductor film (a-Si)

207A‧‧‧1st resist pattern

206‧‧‧Metal film for source bungee

207B‧‧‧2nd photoresist pattern

2a‧‧‧Open aperture

2b‧‧‧field aperture

3‧‧‧Photomask

3a‧‧‧Photomask maintenance device

4‧‧‧ for the objective system

4a‧‧‧Simultaneous mirror

4b‧‧‧Group 2 (Imaging Mirror)

6‧‧‧Wavelength Selection Filter

4c‧‧‧Aperture mechanism (open aperture)

81‧‧‧Lighting Department

5‧‧‧Photographing device (photographic component)

82‧‧‧ vertical line (shading line)

Dg‧‧‧Light intensity data

Dh‧‧‧Light intensity data

Di‧‧‧Light intensity data

Jg‧‧‧1st light intensity data

Ig, Ih, Ii‧‧‧ benchmark intensity data

Jh‧‧‧2nd light intensity data

Ji‧‧‧3rd light intensity data

Α‧‧‧1st coefficient

Β‧‧‧2nd coefficient

Γ‧‧‧3rd coefficient

θ‧‧‧Leaving a straight angle

205‧‧‧2nd semiconductor film (N+a-Si)

[Fig. 1] is a graph showing the effective transmittance of the center of the semi-transmissive portion sandwiched by the edges of a pair of parallel light-shielding portions.

[Fig. 2] Fig. 2 is a side view showing the structure of an inspection apparatus used in the method of manufacturing a mask according to the present invention.

[Third (A), (B), and (C)] FIG. 3 is a cross-sectional view showing a manufacturing step (first half) of a TFT substrate using a gray scale hood.

[Fourth (A), (B), and (C)] FIG. 4 is a cross-sectional view showing a manufacturing step (second half) of a TFT substrate using a gray scale hood.

[Fig. 5] is a front view showing the structure of the gray scale hood.

[Fig. 6] The state of the gray scale portion in the photograph data obtained in the inspection apparatus of Fig. 2 is displayed.

[Fig. 7(A)] is a plan view showing a structure of a test hood used in the method of manufacturing a reticle according to the present invention.

[Fig. 7(B)] is an enlarged view of a test pattern included in the test hood of Fig. 7(A).

[Fig. 8(A)] is a plan view of a unit pattern row included in the test pattern of Fig. 7(B).

[Fig. 8(B)] is a diagram showing the relationship between the width change of the gray scale portion and the transmittance in the unit pattern row of Fig. 8(A).

[Fig. 9] is the other of the unit patterns in the test hood of Figure 7(A) Sample floor plan.

[Fig. 10] Still another exemplary plan view of the unit pattern in the test hood of Fig. 7(A).

[Fig. 11(A)] shows the spectral characteristic curve of the light source in the inspection apparatus of Fig. 2.

[Fig. 11(B)] shows the spectral characteristic curve of the wavelength selective filter used in the inspection apparatus of Fig. 2.

[Fig. 11(C)] is a graph showing another example of the spectral characteristics of the wavelength selective filter used in the inspection apparatus of Fig. 2.

[12th] is a reference intensity data curve displayed on the spectral characteristics of the light source in the inspection apparatus of Fig. 2, the spectral sensitivity distribution of the imaging element of the mask, and the respective filters, and the display is multiplied by the corresponding reference. A state diagram of the coefficients of the intensity data.

Claims (11)

A method for producing a mask, wherein a mask having a predetermined transfer pattern is used for a photoresist film formed on a layer to be processed by etching, and includes a light transmitting portion, a light blocking portion, and a semi-light transmitting portion that transmits a portion of the exposure light. When the exposure is performed under a predetermined exposure condition, and the predetermined transfer pattern is transferred, and the photoresist pattern having a predetermined shape in the etching process is used as a light shielding cover, the photoresist film is used, which is characterized in that: the transmitted light is obtained. In the step of pattern data, the test hood forming the predetermined test pattern is subjected to test exposure using an exposure condition similar to the above exposure condition, and the transmitted light pattern of the test pattern is obtained by the photographing device, and according to the obtained transmitted light pattern, Transmitting light pattern data; and obtaining a practical transmittance according to the above-mentioned transmitted light pattern data, obtaining an effective transmittance of the test pattern under exposure conditions similar to the above exposure conditions; wherein, according to the above-mentioned effective transmittance, in the above-mentioned predetermined Under the exposure condition, the photoresist film may be a photoresist pattern having the predetermined shape described above. Semi-transparent portion includes a pattern shape of the photomask, the film material comprising the above-described semi-transmissive region formed in the portion, or the thickness of the region. The method of manufacturing a reticle according to claim 1, wherein the test hood has a light shielding portion, a light transmitting portion, and a semi-light transmitting portion, and includes: a pattern shape of the semi-light transmitting portion or forming the light transmitting portion a film material, or a plurality of test patterns having different semi-transmissive portions having different film thicknesses; a pattern shape of the semi-transmissive portion of the photomask, including the semi-transparent The film material formed in the region or the film thickness of the region is determined by the plurality of light transmissive pattern data obtained by the plurality of test patterns, and the semi-transmissive portion is matched with the semi-transmissive portion. The relationship between the effective transmission of the characteristics and the correlation based on the mastery. The method of manufacturing a photomask according to the first or second aspect of the invention, wherein the semi-transmissive portion included in a predetermined pattern of the photomask is formed by forming a semi-transmissive film on a transparent substrate. The method of manufacturing a reticle according to claim 3, wherein in the reticle, a semi-transmissive portion and a light-shielding portion form a semi-transmissive film on the transparent substrate, and the light-shielding portion is in the semi-transparent portion. A light shielding film is formed on the light film. The method of manufacturing a reticle according to claim 3, wherein in the reticle, a light-shielding film is formed on the transparent substrate, and a semi-transmissive film is formed on the light-shielding film, and is semi-transparent. In the light portion, a semi-transmissive film is formed on the transparent substrate. The method of manufacturing a photomask according to claim 3, wherein the semi-transmissive portion has a practical transmittance lower than an intrinsic transmittance of the semi-transmissive film. The method of manufacturing a photomask according to the first or second aspect of the invention, wherein the photomask for manufacturing a thin film transistor of a liquid crystal device is manufactured. The method of manufacturing a reticle according to claim 1, wherein the exposure condition for the exposure condition is such that the number NA of openings of the imaging optical system under the predetermined exposure condition is within a range of ±0.005. An imaging optical system having a number of openings, and exposure light of a wavelength component of the exposure light included in the above-described predetermined exposure conditions. A pattern transfer method characterized by using the photomask manufactured by the photomask manufacturing method according to the first or second aspect of the invention, wherein the exposure under the exposure conditions is performed on the photoresist film. A library of effective transmittance of a semi-transmissive portion, comprising: a light shielding portion, a light transmitting portion, and a semi-light transmitting portion, a pattern shape for semi-transmissive light, or a film material forming the light transmitting portion, or any a plurality of test patterns having different semi-transmissive portions of film thickness, and performing test exposure using an exposure device that approximates a predetermined exposure condition; the transmitted light patterns of the test patterns are obtained by a photographing device, and a transmitted light pattern is obtained according to the obtained transmitted light pattern. According to the above-mentioned transmitted light pattern data, the effective transmittance of the semi-transmissive portion of the plurality of test patterns is obtained; and the characteristics of the semi-transmissive portion and the corresponding effective transmittance are arranged according to a certain rule. A library of effective transmittance of a semi-transmissive portion, comprising: a light shielding portion, a light transmitting portion, and a semi-light transmitting portion, a pattern shape for semi-transmissive light, or a film material forming the light transmitting portion, or any a plurality of test patterns having different semi-transmissive portions having different film thicknesses, setting a plurality of exposure conditions, and applying the plurality of exposure conditions to perform test exposure; the transmitted light patterns of the test patterns are obtained by a photographing device, according to the obtained transmitted light patterns Obtaining a plurality of transmitted light pattern materials; obtaining the above-mentioned exposure conditions according to the above-mentioned transmitted light pattern data The effective transmittance of the semi-transmissive portion of the test pattern; and the exposure conditions, the characteristics of the semi-transmissive portion, and the corresponding effective transmittance are arranged in accordance with a regular rule.