TW201030451A - Multi-tone photomask and method of manufacturing the same - Google Patents

Abstract

A multi-tone photomask has a transfer pattern including a light-transmitting region, a light shielding region, and a light semi-transmitting region. The light semi-transmitting region of the transfer pattern has a first light semi-transmitting portion having a first effective transmittance, and a second light semi-transmitting portion having a second effective transmittance different from the first effective transmittance. By the use of the photomask, a resist film formed on an object is exposed to transfer the transfer pattern on the resist film. Then, the resist film is developed to form a resist pattern. The first and the second effective transmittances are determined so that portions of the resist pattern corresponding to the first and the second light semi-transmitting portions have residual resist film values substantially equal to each other.

Description

201030451

Pc~monolayer film;

Pd to the pattern below the analysis limit C to the first semi-transmissive portion; d to the second semi-transmissive portion. 5. If there is a chemical formula in this case, please disclose the best style that can show the characteristics of the invention. VIII. OBJECTS: [Technical Field] The present invention relates to a multi-step dimmer and a manufacturing method used in a photolithography process. [Prior Art] In the past, in the manufacture of electronic devices such as liquid crystal display devices, a photomask having a predetermined pattern was used, and a photoresist film formed on a layer to be processed by a surname was determined by a photomask having a predetermined pattern. The exposure conditions are subjected to exposure, and the transfer pattern is further developed by a photoresist film to form a photoresist pattern. Then, this photoresist pattern is used as a mask layer for the surname of the mask. The reticle has a multi-step dimmer cover having a light-shielding field that blocks exposure, a light-transmissive field that transmits exposure, and a semi-transmissive field that allows a portion of the exposure to pass through. When a desired pattern is transferred to a photoresist film (positive photoresist) of a transferred body using a multi-step dimming cover including such a light-shielding field, a semi-transparent field, and a light-transmitting field, light is transmitted through a multi-tone tone. The light transmission of the mask is exposed to the field of 201030451 and the semi-transparent field. At this time, the amount of light irradiated through the semi-transmissive region is smaller than the amount of light transmitted through the transmissive region. Therefore, the residual film value of the photoresist film after development of the photoresist film exposed to such exposure differs depending on the amount of light to be irradiated. That is, the value of the photoresist residual film in the field of the semi-transmissive field through the multi-step dimmer is thinner than the value of the photoresist in the corresponding shading field. By performing exposure and development using a multi-step dimmer as described above, it is possible to obtain a photoresist pattern having a photoresist residual film value of at least three kinds of thickness (including a residual film value of zero). In the case of using a photoresist film having a different photoresist residual film value in this field, in the case of forming a processed object having a photoresist film, first, a region in which the residual film value is zero (the field in which the processed object is exposed: Corresponding to the light transmission part of the multi-step dimmer, the photoresist film is then reduced by ashing. Thereby, the field of the photoresist film having a relatively small thickness (the portion of the multi-step dimming cover corresponding to the semi-transmissive field) is removed, and the object to be processed is exposed. The exposed object to be processed is then etched. Therefore, a multi-step dimmer having a photoresist pattern having a plurality of dissimilar photoresist residual film values is realized, which is quite useful because the number of sheets of the photomask is reduced to make the photolithography process more efficient. An example of patterning using a multi-step dimmer as described above is disclosed in Patent Document 1 (JP-A-2000-1 1 958). The method in this document manufactures a thin tantalum transistor which has been conventionally etched using five 5 Ge 6 masks, and is manufactured in a process using a four-piece mask. In this method, a photomask having three or more transmittances is disclosed. In the processing of the object to be processed using the multi-step dimmer, it is important to reduce the amount of the photoresist film in the middle as described above, so that it is important to precisely control the photoresist film. If the photoresist residual film value is not precisely controlled, the processing of 201030451 will become significantly more complicated and the production efficiency will also decrease. Focusing on violations, this month provides a multi-step dimmer and its manufacturing method to precisely control the residual photoresist film during processing of a processed object using a multi-step dimmer. SUMMARY OF THE INVENTION A multi-step dimming cover of the present invention includes a light-shielding film that is exposed by a masking exposure provided on a transparent substrate, and a light-transmitting field formed by a semi-transmissive medium that transmits the exposure portion. Transfer patterns in the field, and in the semi-transparent field. The semi-transmissive region of the transfer pattern includes a first semi-transmissive portion having a first effective transmittance and a second semi-transmissive portion having a second effective transmittance different from the ith effective transmittance. The setting of the first effective transmittance and the second effective transmittance of the transfer pattern is such that after the transfer mask is exposed and transferred to the photoresist film on the transfer target by using the mask, the photoresist film is developed. The portion of the photoresist pattern corresponding to the ith semi-transmissive portion and the second semi-transmissive portion has substantially the same photoresist residual film value. In the multi-step dimming cover of the present invention, the second effective transmittance and the second effective transmittance are a line width, a shape, and a semi-transmission using the second semi-transmissive portion and the second semi-transmissive portion. At least one of the film transmission rates of the film is determined. In this case, each of the first semi-transmissive portion and the second semi-transmissive portion is composed of a semi-transmissive film having a different film transmittance. The first semi-transmissive portion and the second semi-transmissive portion are different in film permeability due to the difference in the semi-transmissive film laminate structure. Or the first semi-transmissive portion and the fifth semi-transmissive portion of the above-mentioned first semi-transmissive portion are different in film permeability due to the difference in thickness of the semi-transmissive film. In the multi-step dimming cover of the present invention, the above-mentioned first! The semi-transmissive portion has a portion in which the unit pattern is repeatedly arranged, and the 帛2 semi-transmissive portion has a portion in which the unit pattern different from the ith semi-transmissive portion is repeatedly arranged. For example, the former corresponds to the pixel pattern of the liquid crystal display device, and the latter corresponds to the peripheral circuit pattern of the liquid crystal display device. In the multi-step dimming cover of the present invention, the semi-transmissive field is a field sandwiched by a plurality of adjacent light-shielding films. In the multi-step dimming cover of the present invention, the semi-transmissive field of the multi-step dimming cover is constituted by a fine pattern having a resolution limit or less. In the method for manufacturing a multi-step dimming cover of the present invention, a light-shielding film for shielding exposure provided on a transparent substrate and a semi-transmissive film for transmitting a part of the exposure are patterned to form a light-transmitting field, a light-shielding field, and a semi-transparent film. The transfer pattern of the light field. The transfer pattern forms the second semi-transmissive portion and the second semi-transmissive portion, and is formed by developing the resist film after exposing and transferring the transfer film on the resist film on the transferred body using the mask. In the photoresist pattern, the first semi-transmissive portion having the first effective transmittance and the second semi-transmissive portion having the second effective transmittance different from the ith effective transmittance are substantially The same photoresist residual film value. In the method of manufacturing the multi-step dimming cover of the present invention, the first effective transmittance and the second effective transmittance are a line width 'shape of the first semi-transmissive portion and the second semi-transmissive portion, and At least one of the film transmittances of the semi-transmissive film is determined. In this case, the ith semi-transmissive portion and the second semi-transmissive portion are formed by using a different film 201030451. Alternatively, the semi-transmissive film having a different laminated structure is used to form the first semi-transmissive portion and the second semi-transmissive portion having different film transmittances. Alternatively, the first semi-transmissive portion and the second semi-transmissive portion having different film transmittances may be formed using semi-transmissive media having different film thicknesses. In the method of manufacturing a multi-step dimming cover of the present invention, the semi-transmissive field of the multi-step dimmer cover is formed by a fine pattern having a resolution limit or less. φ In the pattern transfer method of the present invention, the transfer pattern is transferred to the photoresist film disposed on the object to be processed by using the multi-step dimmer described above. The multi-step dimming cover of the present invention includes a light-shielding film that is exposed by shielding on a transparent substrate, and a semi-transmissive film that transmits a part of the exposure, and has a light-transmitting field, a light-shielding field, and a semi-transparent field. Transfer pattern. The semi-transmissive region of the transfer pattern includes a first semi-transmissive portion having a first effective transmittance and a second semi-transmissive portion having a second effective transmittance different from the first effective transmittance. The setting of the first φ 1 effective transmittance and the second effective transmittance of the transfer pattern causes the photoresist film to be developed by exposing and transferring the transfer pattern to the photoresist film on the transferred object by using the mask. The portion of the photoresist pattern corresponding to the first semi-transmissive portion and the second semi-transmissive portion has substantially the same photoresist residual film value. Therefore, in the processing of the object to be processed using the multi-step dimmer, the photoresist residual film value can be precisely controlled. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. 201030451 The inventors focused on obtaining the desired photoresist residual film value on the transferred body, and merely controlling the transmittance of the semi-transmissive film used in the semi-transmissive portion of the multi-step dimmer is insufficient, and the inventors found that When obtaining the portion of the photoreceptor residual film value on the transferred body, it is determined that the photoresist residual film value is not only considered for the exposure transmittance of the semi-transparent film of the photomask, but also must be considered to be formed in the photomask. A phenomenon of light diffraction caused by a pattern shape or an optical characteristic of a light source used for exposure or the like. Therefore, the inventors have made an effect of controlling the effective transmittance by replacing the film transmittance Tf of the semi-transmissive film by the effective light transmittance (effective transmittance) Τα of the mask. The inventors have reviewed the method of producing a glazed and excellent reticle for the reticle user through a higher degree of control. described as follows. As described above, in the conventional processing of the object to be processed using the multi-step dimmer, a specific exposure light transmittance is used in order to form a photoresist residual film of a desired residual film value on the photoresist film of the object to be processed. The semi-transparent field of the reticle. For example, 'transparent field, shading field' plus a 3rd-order dimmer in the semi-transparent field. At this time, we hope that the value of the photoresist residual film on the treated body formed by the semi-transmissive field is uniform in the horizontal direction. At least if the photoresist residual film value is not within a predetermined allowable range at any position in the horizontal direction, a problem occurs when the photoresist is used as a barrier etching process. Therefore, it is preferable to manage the effective transmittance T 乂 in the semi-transmissive field formed in the transfer pattern of the reticle so that all of the semi-transparent collars can obtain the effective exposure transmittance of the phase 疋. This effective transmittance is considered to be the 201030451 transmittance of the reticle, for example, in the semi-transmissive field during exposure. The actual situation is as shown in Fig. 1, and the peak value of the light transmission curve in the semi-transmissive field can be regarded as the effective transmittance. However, when such a multi-step dimming cover is used to expose the photoresist film of the transferred body to form a photoresist pattern on the object to be processed, the photoresist residual film value of the portion corresponding to the semi-transmissive region may not necessarily be A certain value. For example, the photomask is a photomask for manufacturing a liquid crystal display device, and a pixel pattern corresponding to a pixel and a pattern for a peripheral circuit corresponding to a circuit in the vicinity of the outer circumference of the transfer pattern are coexisted in the transfer pattern. At this time, the pattern of the pixel and the pattern for the peripheral circuit include the semi-transparent field. Even if the mask is pre-designed to make the individual effective transmittance the same, 'using the mask to expose the photoresist film on the object to be processed, in the semi-transparent field of the pixel pattern and the semi-transparent field in the peripheral circuit pattern, There are cases where the corresponding residual film values are different. The pattern shapes of the pixel pattern and the peripheral circuit pattern are different from each other, and the line width (CD (Critical Dimensi)) of the portion corresponding to the semi-transmissive field or the light-transmitting field/shading field/semi-transparent field including the surrounding pattern The area ratio is also different from each other. Therefore, even if the effective transmittance of the photomask is fixed, the photoresist residual film value in the corresponding semi-transmissive field is affected because of the reason other than the photomask. In addition, the reason other than the mask has a certain regularity and reproducibility. For other reasons, for example, the individual differences in the exposure machine may result in a horizontal distribution of exposure. For the reticle user, it is convenient to process the transferred body, and the residual film value is a predetermined value, and the degree of unevenness of the residual film value is the most demanded. That is, in order to obtain a predetermined photoresist residual film value (Rt), it is possible to first reflect the actual exposure conditions, development conditions, and the like, and then design a suitable mask. It must be a certain value, so Τα for the semi-transmissive field of a reticle is not controlled to keep Rα constant. From this point of view, it is not necessary to separately review the cause of the unevenness of Rt, as long as the reticle is provided to obtain an excellent photoresist pattern at the end. In addition, a third-order dimming cover having a light-transmitting field, a light-shielding field, and a semi-transparent field is taken as an example, but in addition to the light-transmitting field and the light-shielding field, there are two or more transparent transmissive fields with effective transmittance. The reticle above the fourth-order tone also has the same problem in the case of a semi-transmissive field having a given effective transmittance. Therefore, we also seek to solve the problem. The semi-transmissive field of the transfer pattern in the multi-step dimming cover of the present invention includes the first effective transmittance. The semi-transmissive portion has a second semi-transmissive portion having a second effective transmittance different from the first effective transmittance and different from the shape of the first semi-transmissive portion, and the photoresistance value is fixed. The first effective transmittance and the second effective transmittance are set such that the mask is exposed to the photoresist film of the object to be transferred, and the pattern transfer is performed. 4 The photoresist film is developed and the film is developed. Ma tSJ also · 1

The light transmitting portion and the above first film value. With such a configuration, the yield of the liquid crystal display or the like can be improved and the yield can be improved by the fact that the photoresist residual film value can be precisely controlled during the processing of the processed object using the multi-step dimmer. The multi-step dimming cover of the present invention refers to a photomask including a light-shielding field, a light-transmitting field, and a third-order tone in the semi-transmissive field. That is, in this multi-step dimming cover, since the semi-transparent field is in addition to the light-shielding field and the light-transmitting field, the photoresist pattern formed on the object to be processed has a plurality of film thicknesses. The light-shielding field can substantially obscure the exposure, and the light-transmitting field can be formed by being exposed as a transparent field such as a transparent substrate. The semi-transmissive field is a relatively small portion of transmittance in the light-transmitting field, and forms a desired residual film on the object to be processed. This semi-transmissive field is formed, for example, by forming a semi-transmissive film having a predetermined film transmittance on a transparent substrate. When the film transmittance in the light-transmitting region is regarded as 1% by weight, the film transmittance of the semi-transmissive film is from 1% to 7% by weight, and more preferably from 2 (10) to Φ 60%. On the other hand, the light-shielding film formed on the transparent substrate can be regarded as a semi-transmissive field by forming a pattern of line widths below the resolution limit of the exposure machine. The present invention is also applicable to a photomask having a retardation pattern having three or more photoresist layers having a retardation or more. The film transmittance Tf is a transmittance of the semi-transmissive field having a very large area for the resolution limit under exposure conditions when the semi-transmissive film is formed on a transparent substrate to constitute a semi-transmissive field. On the one hand, the actual transmittance is affected by the line width of the pattern, etc., and the exposure light transmittance in the semi-transmissive field under the actual pattern is defined by the effective transmittance Τα. Since the effective transmittance is an index after considering optical conditions or pattern design in addition to the transmittance inherent to the film, it is an index that accurately reflects the state of the residual film value, and the residual film value can be appropriately managed. The effective transmittance may also refer to a transmittance having a maximum value in the light intensity distribution in the semi-transmissive field when the exposure transmittance in the light-transmitting field is 100%. This is because, for example, when the mask is used to form a photoresist pattern of a positive photoresist on the transferred body, it is related to the minimum value of the residual photoresist film value generated in the semi-transmissive field. Regarding the management of this range, for example, the channel field width of the thin film transistor is particularly effective below 5/zm. 11 201030451 The apparatus for measuring the effective transmittance as described above is, for example, the apparatus shown in Fig. 2. This device is mainly made up of light sources! , will be by the light source,! The emitted light is applied to the illumination optical system 2 that illuminates the mask 3, the objective lens system 4 that images the light transmitted through the mask 3, and the imaging device 5 that images the image obtained by the objective lens system 4. The light source 1 emits a light beam of a predetermined wavelength, and for example, a halogen lamp, a metal halide lamp, a UHP lamp (ultra-high pressure mercury lamp), or the like can be used. The illuminating optical system 2 guides the light from the light source 使其 to be irradiated to the reticle 3. This illuminating optical system 2 has a contraction mechanism (opening contraction valve 7) because the numerical aperture (na) can be changed. This illuminating optical system 2 may also have a field of view contraction valve 6 for adjusting the irradiation range on the reticle 3. The light that has passed through the illuminating optical system 2 illuminates the reticle 3 supported by the reticle holder 3a. This illumination optical system 2 is disposed in the housing 13. The reticle 3 is supported by the reticle holder 3&. The reticle holder 3& supports the lower end portion of the reticle 3 and the vicinity of the side edge portion in such a manner that the main plane of the reticle 3 is slightly vertical, so that the reticle 3 is maintained at a fixed inclination angle. ❹ This reticle holder 3a is capable of supporting a large-sized photomask 3 of various sizes like the reticle 3 (e.g., the main plane 122 〇 mm x l400 mm 'thickness 13 mm). The so-called slightly lead is meant to mean that the angle between the vertical and the vertical is within 1 degree as shown in Fig. 2. The light irradiated to the reticle 3 is incident on the objective lens system 4 through the reticle 3. The objective lens system 4 is incident on, for example, light incident through the reticle 3, and the infinity correction is added to the light beam to be regarded as parallel light. One group (analog mirror) 4a and a second group (imaging mirror) 4b 12 201030451 which image the light beam of the first group are used. The pull mirror 4a is provided with a contraction mechanism (opening σ contraction 7) so that the numerical aperture can be changed. The light beam that has passed through the objective lens system 4 is received by the photographing device 5. This objective lens system 4 is disposed in the housing 13. This imaging device 5 captures an image of the reticle 3. As the imaging device 5, a photosensitive element such as a CCD can be used. In this device, the numerical aperture of the illumination optical system 2 and the numerical aperture of the objective lens system 4 can be varied, respectively, so that the numerical aperture ratio of the numerical aperture of the illumination optical system 2 to the objective lens system 4, that is, the mouth value (port) : Coherence) Change enough. By appropriately selecting the above conditions, it is possible to reproduce or approximate the optical conditions at the time of exposure. In this device, a computing device u is additionally disposed to perform screen processing, calculation, and comparison with the threshold value of the captured image obtained by the imaging device 5, and the control device 丨4 has a display device moving operation device. 15, the position of the frame 13 can be changed. Therefore, using the obtained captured image or the light intensity distribution obtained therefrom, the control device performs _ 疋 calculation, and can obtain a captured image, light intensity distribution, or transmittance under other exposure conditions. As shown in Fig. 2, the να and a values of the device having such a structure are variable, and the line source of the light is also changed, so that the exposure conditions of various exposure machines can be reproduced. The effective transmittance Τα is here regarded as the maximum transmittance value (corresponding to the bottom of the photoresist residual film value) in the light intensity distribution curve of the semi-transmissive field. That is, in the case where the effective transmittance Τα is in the semi-transmissive region sandwiched by the adjacent light-shielding film, it means that the light intensity distribution curve of the transmitted light is a bell shape and corresponds to the transmittance of the peak 13 201030451. This effective transmittance is determined by the actual exposure conditions (optical parameters, spectral characteristics of the illumination light) and the current mask pattern. It is only for the sake of simplicity that it is possible to replace the exposure conditions with model conditions. For this condition, for example, an optical system having a numerical aperture of 〇.〇8 and a homology of 〇8 can be regarded as an exposure condition using irradiation light of an intensity of 1:1:1 for each of the g-line, the h-line, and the i-line.

The multi-step dimming cover of the present invention has a transfer pattern which is formed by a light-shielding film which is disposed on a transparent substrate to block exposure and a semi-transparent film which partially passes the exposure to form a light-transmitting field, a light-shielding field, and a semi-transparent light. field.

A glass substrate or the like can be used for the transparent substrate. As the light shielding film that covers the exposure, a metal film such as a chromium film, a tantalum film, a metal oxide film, or a metal halide film such as a molybdenum dichloride film can be used. Preferably, the light shielding film has a reflection preventing film on the surface, and the material of the reflection preventing film may be an oxide, a nitride, a carbide, a fluoride or the like of chromium. As the semi-transmissive film through which a part of the exposure is passed, chromium oxide, nitride, carbide, oxynitride, oxynitride carbide, or metal telluride or the like can be used. In particular, a metal ruthenium film such as a chromium oxide film, a chromium nitride film or a molybdenum dichloride film, or an oxide thereof, a nitride oxynitride, a carbide or the like. In the multi-step dimming cover of the present invention, it is preferable that the effective transmittance and the second effective transmittance of the first right τ 乐 1 are set when (4) the reticle is exposed and developed by the photoresist film on the object to be processed. The photoresist residual film has substantially the same value. Here, substantially the same photoresist residual film value refers to the light & 耵 耵 丨 图案 图案 图案 图案 图案 时 时 时 时 时 时 时 时 时 时 时 时 时 时 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个 整个The extent to which the processing conditions are determined. For example, in the case of a semi-transparent field sandwiched by a side mask, the photoresist pattern formed on the photoresist film and the semi-transmissive field are formed in the case of a semi-transparent field sandwiched by a side mask. The light transmission curve (the shape in the square in Fig. 1) is related, and has, for example, a feature in which the shape in the square is upside down. For example, if the media thickness of the peak portion of the light transmission curve (that is, the bottom portion of the photoresist residual film) is within 2 Gnm, or preferably at 10 (10), it can be regarded as substantially the same residual film value. In the multi-step dimming cover of the present invention, the semi-transmissive region on the transfer pattern includes an i-th semi-transmissive portion having a first effective transmittance and a second effective transmittance different from the effective transmittance of the first work. Further, the second semi-transmissive portion having a shape different from the semi-transmissive portion (for example, a 'pattern) is such that the photoresist residual film value RT is −疋. The semi-transmissive portion and the semi-transmissive portion in this case will now be described. 'The actual mask (for example, the liquid crystal $ m Μ and the reticle for the production of a thin film transistor for the display of the solar cell) is provided with a repeating pattern corresponding to the element. There are many patterns in each unit

The TFT pattern as shown in Fig. 3(4). Therefore, using the pattern design shown in Fig. 3(a), the reticle design considering the effective transmittance τ will be shown. In Figure 3(a)

Ab corresponds to the source/drain field of m, and ^ in the 3(a) corresponds to the channel field. The third-order dimming cover included in this transfer case is not shown in Fig. 3(b). The Aa field is constituted by a light-shielding film 23, and the Ab field is constituted by a semi-transmissive film 22. Reference numeral 21 in the figure denotes a transparent substrate. However, in the periphery of the pixel region of the pattern of the plural unit of the actual TFT manufacturing diagram, there is also a unit pattern mask having a matching pattern or a different shape, which is provided with the same arrangement as the third (a) pattern field. A field of peripheral circuit patterns of a unit having the same shape as that of the third figure (a). That is, the 201030451 pattern includes a picture of a corresponding liquid crystal display device having a unit pattern repeatedly arranged.

A plurality of channel patterns, peripherals, and the like have different peripheral circuit patterns. In this case, there are also cases where the plurality of channel patterns or the plural peripheral circuit patterns have different sizes, shapes, or arrangement densities. When the mask pattern shown in Fig. 3(a) is exposed under the conditions of exposure using an actual exposure machine, the portion along the ΙΠΒ-ΙΠΒ of the third (a) image of the transferred image generated on the transferred object is corresponding. The light intensity distribution is shown in Figure 1. The exposure conditions here are as follows. NA (numerical aperture) of the exposure machine: 〇. 085 σ (coherence): 〇. 9 Exposure wavelength: i-line to g-line intensity ratio: g/h/i = l. 0/0. 8/0. 95 The semi-transmissive field is formed by forming a MoSi film on a light-transmitting substrate, and the composition and film thickness are adjusted so that the light transmittance in the semi-transmissive field is 44% under the g-line. Further, the phase difference between the transmitted light in the semi-transmissive field and the transmitted light in the transparent region of the transparent substrate is less than 30 degrees. When the phase difference between the transmitted light in the semi-transmissive field and the transmitted light in the transparent region of the transparent substrate is less than 30 degrees, a light intensity distribution for forming an appropriate photoresist pattern on the transferred body is realized. The standard size of the channel width (also called channel length) of the above pattern (the width of the semi-transparent 201030451 field) is set to 3.7em. The transmission curve at which the unit at the bottom of the width of the channel is increased or decreased is shown in Fig. 1. In the fourth diagram, the enlarged view of the square enclosed portion in Fig. 1 is shown. In the first and fourth figures, the vertical axis represents the effective transmittance TA. It can be seen from Fig. 1 and Fig. 4 that the maximum value of the light intensity distribution curve changes up and down as the width of the semi-transmissive field changes. The minimum value of the photoresist pattern formed at the time of exposure using this mask (the bottom of the residual film shape) also changes. Even if the same semi-transmissive film having an exposure transmittance of 44% of the g-line is used, the residual film value changes depending on the pattern shape (line width). The maximum value (peak value) of the light intensity distribution is shown in Table 1 below. Table 1 Channel Width 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 Peak Transmittance (Effective Transmittance T*) 33.503⁄4 34. 303⁄4 35.10% 35.90% 36. 603⁄4 37. 20% 37.803⁄4 38.403⁄4 38.803⁄4 39. 30% 39.703⁄4 The above-mentioned light intensity distribution curve can be obtained by actually using the exposure machine to make the model mask exposure 'obtained by the transfer surface configuration camera (hard body simulation). Or be able to specify optical conditions by software simulation (software simulation). The relationship between the channel width and the effective transmittance τ 观察 observed from the above results is shown in Fig. 5. This curve is approximated by the following quadratic formula (1) in the range of the channel width of 3.0//m to 4.4/zm. y=-〇.250x2 +〇.2471x- 0.2003 (1) When using the above formula (1) to obtain a predetermined effective transmittance, if the semi-transmissive film described above is used, it is possible to determine how large the channel width is to be used (half The line width in the field of light transmission is more appropriate. For example, if you want to reduce the effective transmittance Τα by 2% (that is, increase the residual film thickness) than the current design (CJ) 17 201030451,), the effective transmittance [from 37.2% to 35.2% can be used. From Fig. 5 and Equation (1), it can be seen that a CD close to Τα == 35.2% can use 3.4#m as a design value of the residual film portion to be thickened. On the contrary, when it is required to be 2% (that is, to reduce the thickness of the residual agent) than the effective transmittance I of the current design, ^ can be set to 39 2, so by the same method, ^^" can be used as the design value. By using the upper method, it is more advantageous to determine the transmittance of the residual photoresist film by the effective transmittance Τα by specifying the transmittance of the multi-step dimming cover only by the film transmittance Tf. In addition to the CD❿ adjustment, there are other methods for adjusting the effective transmittance Τα. The actual mask has different pattern fields as described above, and even if the pattern field is different, the amount of photoresist residual film has a certain value. Therefore, the relationship between the effective transmittance and the line width obtained by the above is used in each pattern field to expose the pattern line width having the same effective transmittance. However, the residual photoresist film value formed between different pattern fields is still not It is a certain value. It is affected by the detection of the residual photoresist film value on the transferred body due to reasons other than the mask. The reasons are as follows: 1) Optical characteristics of the exposure machine and illumination optics 2) The horizontal direction of the exposure light is not uniform. 3) The photoresist processing characteristics (especially the development characteristics) caused by the different patterns are different. 1) The effective transmittance can be reflected. However, 2) and 3) will be actual. After the photoresist pattern is formed by the photomask, it appears in the mask design. For example, in the field of pixel patterns and 18 201030451 peripheral circuit patterns, the pattern density is different and the pattern size is also Different 'based on this, we can easily see that because the pattern configuration makes the area ratio of the light-shielding field, the light-transmitting field, and the semi-transparent field different, so in the two fields, 'there is a direct relationship with the above difference, so that the developing action, The development efficiency is different 'The residual film value of the photoresist pattern obtained is also affected by this effect.

It is assumed that the patterns shown in Fig. 3(a) are respectively arranged in the field of the pixel pattern of the reticle and the area of the peripheral circuit pattern (the channel width, that is, the reference design line width of the semi-transmissive field is 3.7/iin). However, it is also assumed that in two fields, the arrangement density of the pattern, and thus the area ratio of the light-shielding field, the light-transmitting field, and the semi-light-transmitting field are different. Here we review how to improve the design of the mask to make the photoresist residual values in the two areas equal under this condition. That is, we consider what kind of effective transmittance Ta photoresist residual film value R? in each of the two fields is a certain value (in this case, the photoresist residual film value Rt refers to the shape of the photoresist pattern in the semi-transmissive field). Minimum thickness (bottom) thickness). The inventors actually used a predetermined exposure apparatus to perform an exposure test on the object to be coated with the photoresist film using a test reticle. After the photoresist film was developed and its shape was measured, the results shown in Fig. 6 and Table 2 were obtained. The purpose of the experiment is to determine the relationship between the effective transmittance Τα and the photoresist residual film value Rt, and to change the resist residual film Rt when the effective transmittance is changed, and to change the amount of exposure light (hereinafter also referred to as Add the dose) and carry the accompanying change in the residual film value of the photoresist. This makes it possible to understand the clear difference in residual film variation between the field of the halogen pattern and the peripheral circuit pattern. 19 201030451 Table 2 Adding dose mJ/cm2 Mean residual film value RT (pixel) nm Mean residual film value RT (peripheral) nm

The exposure amount Da actually received by this diaphragm is the additive amount X effective transmittance (??), so the horizontal axis is changed to the effective exposure amount (Da). The results are shown in Figure 7 and Table 3. The line width is 3.7/zm, so the effective transmittance >^ is 37.2% (refer to Table 1). Table 3 Effective exposure Da _ mJ/cm2 Average residual film value Rt (pixel) nm Average residual film value RT (peripheral) nm 26 —· 911.2 83172-27.5 — 834.2 739.1 29 --------- 777.7 673.8 30.5 1------ 696.9 606.5 32 620.6 565.8 As shown in Fig. 7, the photoresist residual film value in the pixel pattern area and the peripheral circuit pattern area can be approximated by the following equations (2) and (3). Alizarin pattern field y = — 482. 8x + 21690· 1 (2) Peripheral circuit pattern field y= — 445. 8x+19769. 2 (3) Using this approximation, the effective exposure amount Da is the residual photoresist to be obtained. The film values are shown in Table 4 20 201030451 Table 4 Target residual film value nm 1000 900 800 700 600 500 Effective exposure Da (halogen) 24.21 26.28 28.36 30.43 32.5 34. 57 Effective exposure Da (peripheral) (mJ/cm2) Effective The exposure amount Da is different from the surrounding area) 21.91

Here, when the amount of the additive is fixed at 80 m J/cin 2 , as shown in Table 5

The relationship between the photoresist residual film value RT and the effective transmittance Ta can be obtained. That is, even if the photoresist residual film value to be obtained is the same, in the above example, the semi-transparent field in the pixel pattern field and the semi-transparent field in the peripheral circuit pattern field must be designed to have an effective transmittance TA of 2% before and after. Photomask. Of course, this adjustment amount will change depending on the value of the residual photoresist film to be obtained, and the design of the pattern 'pattern will change. However, when the exposure conditions and the pattern design are determined, the actual situation can be reproduced well, and therefore it is indeed advantageous to use the above method. That is, careful consideration can be given to the loading effect produced in the processing process of the processed object, the development speed change caused by the different configuration of the image, or the horizontal distribution of the exposure caused by the exposure machine, etc., and the effect can be eliminated to design the mask. It is true that (4) the conditions for the processing of the object to be processed. 21 201030451 Table 5

Further, in the photolithography process in which the photolithography process fish using the test reticle is used, the exposure conditions or process conditions are premised. In the review above, it is possible to adjust the amount of the green residual film to obtain the desired green residual film value. Next, how to make the first photoresist with the effective circuit diagram/pattern, for example, corresponding to the pixel pattern field and the peripheral circuit pattern, respectively, and the second light transmission portion are intended to be their first resistance. The residual film values are the same, so their effective transmittance TA is different. In the case 3, the effective transmittance Τα of the second translucent portion and the second semi-transmissive portion are different, and the line width, pattern opening, 丄 + far 4 and second enrichment of the first semi-transmissive portion are determined. The light transmittance of the semi-transmissive portion of the light portion 1 and the second abundance: film is at least one. In the first place, the effective transmittance of the photoresist film and the light-transmitting material is set, that is, the flute, and the residual film contour at the time of development is the same at the bottom portion: the first semi-transmissive portion and the second semi-transmissive portion. The residual film value is the same. As shown in the second semi-transparent//(a) diagram and the eighth-order diagram, in the first semi-transmissive portion, the film transmittance can be made different by the semi-transmissive film laminate structure 201030451 which is different from each other. . For example, one side is composed of a laminate layer, and the other side is a single layer. In the configuration shown in Fig. 8(a), the ith semi-transmissive film 34 and the second semi-transmissive film 35 are used in the first semi-transmissive portion 8 (dark semi-transmissive region), and the second half is used. The light transmission 骐 35 is in the second semi-transmissive portion c (light semi-transmissive field). The material of the second semi-transmissive film 35 may be M〇Si (M〇Si2), MoSiN, MoSiON, MoSiCON, etc. containing mainly molybdenum molybdenum (M〇s〇), or chromium nitride containing Cr as a main component. , chromium oxide, chromium oxynitride, chromium fluoride, etc. φ In the structure shown in Figs. 8(a) and 8(b), the material of the ith semi-transmissive film 34 can be the second half The light transmissive film holder is selected from the same material. The transmittance of the first semi-transmissive portion B is set by the film material and film thickness of the first semi-transmissive film 34 and the second semi-transmissive film 35, and the second half is selected. The transmittance of the light transmitting portion C is set by the film material and the film thickness of the first semi-transmissive film 34. In the eighth (a) to eighth (d), reference numeral 31 denotes a transparent substrate. Reference numeral 32 denotes a light-shielding film, and reference numeral 33 denotes an anti-reflection film. As shown in Fig. 8(c), the first semi-transmissive portion b and the second semi-transmissive portion c can be respectively transmitted by different films. a semi-transmissive film composition. In the structure shown in Fig. 8(c), the ith semi-transmissive film 34 is used in the i-th semi-transmissive portion B (dark semi-transmissive field), and the second half is used. The light transmissive film 35 is in the second semi-transmissive portion C (bright In the field of light transmission, the semi-transmissive fields of both are single-layer structures. The material of the first semi-transmissive film 34 may be MoSi (MoSi2), MoSiN, MoSiON mainly composed of molybdenum (M〇Si). MoSiCON, etc., the material of the second semi-transmissive film 35 may be chromium nitride, chromium oxide, chromium oxynitride, chromium fluoride, etc. 23 201030451 Next, as shown in Fig. 8(d), the first semi-transmissive portion b and the second semi-transmissive portion C may each have different film transmittances from different semi-transmissive film thicknesses. In the structure shown in Fig. 8(d), the first semi-transmissive portion b and the second semi-transparent portion The semi-transmissive film 34 is formed on the light portion C such that the thickness of the semi-transmissive film 34 of the first semi-transmissive portion B is thick, and the thickness of the semi-transmissive film 34 of the second semi-transmissive portion C is thin. The semi-transparent film may be partially etched by a two-light developing process using, for example, a photoresist to form different film thickness portions. The semi-transmissive film may use a chromium oxide 'nitride. A carbide, an oxynitride, a oxynitride carbide, or a metal ruthenium compound, etc., particularly a metal ruthenium film such as a bismuth ruthenium (MoSix) film. As shown in FIGS. 9(a) to 9(d), in the first semi-transmissive portion and the second semi-transmissive portion, the effective transmittance centers can be made different by different line widths (CD). In the structure shown in Fig. 9(a), the effective transmittance of the semi-transmissive field is made by making the pattern line widths of the light-shielding film 32 and the anti-reflection film 33 different (the line width is small: Wc, the line width is large: wd). Ta is different. However, in the structure shown in Fig. 9(b), the pattern of the semi-transmissive film 34 (single layer film: resolution limit ❿ below pattern: Pd) is changed to effectively transmit the semi-transmissive field. The rate TA is different. Further, as shown in Figs. 9(c) and 9(d), the semi-transmissive film 34 is not used, and the light-transmitting film 32 (and the anti-reflection film 33) can be formed into individual effective transmittances. The semi-transmissive portion c and the second semi-transmissive portion d. In this case, as shown in Fig. 9(c), all the patterns may be fine patterns (e.g., fine lines or dots) below the analysis limit, and as shown in Fig. 9(d), may be fine patterns and below the analysis limit. A pattern of line widths that can be resolved. Therefore, the change in the residual photoresist film value can be grasped by the above method, and 24 201030451 based on the result, the light having the first semi-transmissive portion and the second semi-transmissive portion (the effective transmittance TA of the last two is different) is performed. Cover design. Manufacturing such a multi-step dimming cover, that is, after exposing the photoresist on the transferred body to transfer the transfer pattern, the resist pattern formed by the development of the photoresist film corresponds to the first semi-transmissive portion and The portion of the second semi-transmissive portion has a multi-step dimming cover having substantially the same photoresist residual film value, and a test mask having a test transfer pattern formed in a semi-transmissive field can be used, and the measurement φ is sighed by the test. The photoresist film on the processing body is exposed to the photoresist residual film value of the test photoresist pattern formed after development, thereby forming a third effective layer according to the relationship between the effective transmittance and the residual film value in the semi-transmissive field. a first semi-transmissive portion having a transmittance and a second semi-transmissive portion having a second effective transmittance different from the second effective transmittance. That is to say, using the test reticle having the semi-transmissive portion of the test transfer pattern, the test transfer object is exposed, and the test pattern is transferred by the photoresist film on the transfer target, and the test light formed after development is measured. The photoresist residual film value of the pattern, at least one of the line width of the semi-transmissive portion, the shape of the semi-transmissive portion, and the film transmittance of the semi-transmissive film for the semi-transmissive portion, and the light to be formed The relationship between the residual film values and the second semi-transmissive portion and the second semi-transmissive portion each having a different first effective transmittance and second effective transmittance are formed according to the above relationship. In this manner, the i-th semi-transmissive portion and the second semi-transmissive portion each having a different first effective transmittance and second effective transmittance may be formed using other parameters obtained. Alternatively, the test reticle having the semi-transmissive portion of the test transfer pattern is used to expose the test object, and the test pattern is transferred after the test film is transferred from the photoresist film 25 201030451 on the transfer target. The photoresist residual film value of the photoresist pattern grasps the relationship between the effective transmittance of the semi-transmissive portion and the photoresist residual film value thus formed, and has different first effective transmittance and second effective transmittance according to the above relationship. The first semi-transmissive portion and the second semi-transmissive portion. The above relationship can also be obtained by effective transmittance as described above. In this case, the line width of the first semi-transmissive portion and the second semi-transmissive portion, the pattern shape of the semi-transmissive portion, and the film transmittance of the semi-transmissive film for the semi-transmissive portion are determined based on the above relationship. At least one of the first semi-transmissive portion and the second semi-transmissive portion having the second effective transmittance and the second effective transmittance is preferably 0. According to the above technical matters, the predetermined exposure conditions are grasped. The relationship between the effective transmittance (or the effective exposure amount) and the photoresist residual film value of the photoresist pattern formed on the transferred body, and the effective transmission when the desired photoresist residual film value is obtained according to the above relationship The rate or the effective exposure amount determines a mask pattern capable of giving the above effective transmittance or effective exposure amount, whereby the mask can be designed, and the mask pattern can be formed by the photoresist film on the transferred body after exposure. The resist pattern of the photoresist residual film value is controlled. In this case, the relationship between the effective transmittance or the effective exposure amount and at least one of a predetermined partial line width, a film transmittance, and a pattern shape of the mask pattern is obtained in advance to obtain the desired light. After the effective transmittance or the effective exposure amount of the residual film value, it is determined that at least one of a line width, a film transmittance, and a pattern shape of a predetermined portion of the mask pattern to which the effective transmittance or the effective exposure amount is given is the best. of. The so-called test reticle here refers to the preparation U for the precise implementation of the actual 26 201030451 reticle design to be obtained. The best case is to pre-design the fine-tuning to form a pattern (test transfer pattern) similar to the actual mask. Expose this with the exposure conditions to be used for the actual mask. When the photoresist pattern formed on the object to be processed is measured using a test mask, the same thing as in the process of forming the photoresist pattern formed on the object to be processed using the actual mask is used. Embodiments of the effects of the invention. First, a multi-step dimming cover 41 for forming a transfer pattern 42 for manufacturing a liquid crystal display device TFT as shown in Fig. 1 is prepared. This pattern has a centrally located pixel pattern field 42a and a peripheral peripheral circuit pattern field 42b. This multi-step dimming cover 41 is destructed by the steps shown in Figs. u(a) to 11(e). First, as shown in Fig. U(a), a blank mask for sequentially forming the semi-transmissive film 52 and the light-shielding film 53 on the glass substrate 51 is prepared. Applying a positive photoresist for laser scanning on the blank mask, and performing a baking to form a photoresist film 4, wherein the data is a pattern corresponding to the source/drain pattern as shown in FIG. 3(a) data. The material of the light shielding film 53 is preferably a film having high light shielding properties such as Cr Si, W, Al or the like. Here we use chrome. The material of the semi-transmissive film is preferably a material having a translucency of about 20% to 70% when the transmittance in the light-transmitting region is regarded as 1 Å, for example, an oxide nitride of a compound, Oxynitride, fluoride, etc.), M〇s, and evaluation, we use here: stone m, the film thickness of the semi-transmissive film 52 is adjusted to a film transmittance T f of 44% on the g line. The thickness is then developed by laser scanning, and as shown in the figure u(b), a photoresist pattern 54ae corresponding to the light-shielding field is formed on the blank 27 201030451 white mask, and then the photoresist pattern 54a is formed as a barrier cover' The light-shielding film 53 is subjected to dry etching, and as shown in Fig. 11(c), a pattern 53a corresponding to the light-shielding region is formed. At this time, the light-shielding film 53 is etched in the field other than the light-shielding field, and the lower semi-transmissive film 52 is exposed. The remaining photoresist pattern 54a is removed by oxygen ashing, concentrated sulfuric acid, etc. The photoresist is applied again to form the photoresist film 54 and the second drawing is performed. The drawing data at this time includes at least the third (〇 The figure shows the semi-transmissive field of the channel portion between the source and the drain. After the drawing, the photoresist film 54 is developed, as shown in the first Ud), to form a photoresist pattern corresponding to at least the semi-transmissive field. In this transfer pattern, the channel width of the pixel pattern and the peripheral circuit pattern is 3.7/. Then, the photoresist pattern 54 is used as a barrier cover, and the semi-transmissive film 52 in the field of the light-transmitting field is removed by wet etching. Thereby, as shown in the u-e diagram, the semi-transmissive field and the transparent field are used. Differentiated to form a semi-transmissive field and a light-transmissive field. The photoresist pattern is not formed on the (4) 53a of the light-shielding film. The light-shielding film 53 of the empty mask of the present embodiment (4) is a mutual light-transmissive film 52. The material of the etched (four) different shape is formed; ^, the light-shielding film 53 in the environment of the semi-transparent film 52 is hardly subjected to (4). Therefore, when the semi-transmissive film 52 is engraved, the pattern 53a of the light-shielding film becomes a (four) cover ( However, in order to surely prevent damage of the light-shielding film 53, the photoresist pattern may be formed in the field of the pattern 53a including the light-shielding film 53. The remaining photoresist pattern is removed by oxygen ashing or the like.

The multi-step dimmer cover thus obtained includes a light-shielding film pattern corresponding to the source and the drain of the TFT 28 201030451 substrate pattern shown in FIG. 3( a ), and a semi-transmissive film pattern corresponding to the channel portion, and The periphery of the transparent substrate is exposed to form a light-transmitting field. 2%β使用。 The reticle design in advance in the semi-transparent field (first pattern portion) in the field of the pixel pattern and the semi-transparent field (second pattern portion) in the field of the peripheral circuit pattern is equal to 37.2% use The multi-step dimmer cover and the large-sized photomask exposure machine are actually exposed to the coated photoresist film, and after φ, the photoresist film is developed to obtain a photoresist pattern. The exposure conditions are the same as in the above analysis. The ΝΑ (numerical aperture) of the exposure machine is 〇· 〇85, σ (coherence) is 0.9, the exposure wavelength is earth line to denier, and the intensity ratio is g/h/i = 1.0/. 0.8/0.95. On the other hand, the semi-transmissive film constituting the semi-transmissive film was formed by using a rib, and the film thickness of the film was adjusted to a thickness of 44% under the g-line. The photoresist residual film value of the channel portion corresponding to the resist pattern was measured for each of the halogen pattern field and the peripheral circuit pattern field, and the difference between the individual average values was 7 〇 nm or more. Therefore, investigating changes in the photoresist residual film value when changing the exposure light amount of the exposure machine and plotting, the relationship shown in Fig. 6 is obtained. After that, it was converted to obtain the correlation between the effective permeate shown in Table 5 and the photoresist residue. When the obtained correlation relationship is obtained and the desired residual photoresist film value is 6〇〇ηιη, the effective transmittance η of the pixel pattern and the peripheral circuit pattern is 40.6% (pixel pattern) and 38.6% (peripheral circuit). pattern). Next, in order to achieve this effective transmittance Ta, the design adjustment of the peripheral circuit pattern of the pixel pattern disk is performed. Specifically, the individual line width is changed (the relationship between the channel width and the effective transmittance Ta is grasped in advance by using Table 1, and the pattern parameter of the mask is changed according to this. That is, the pixel area is 2010 30451. The channel portion is larger than the channel portion in the peripheral circuit pattern field. Using the modified multi-step dimming cover, the same developing step is performed on the object to be processed by the same exposure machine as described above, the pixel pattern field and the peripheral circuit. In the pattern field, the photoresist residual film value in the portion corresponding to the semi-transmissive field is almost 600 nm', and the average difference is less than 2 〇 nm. Thus, the semi-transmission pattern of the transfer pattern in the multi-step dimming cover of the present invention is obtained. The field has a first semi-transmissive portion having a first effective transmittance and a second semi-transmissive portion having a second effective transmittance different from the first effective transmittance, and therefore is processed using a multi-step dimming cover. In the bulk processing, the photoresist residual film value can be precisely controlled. The present invention is not limited to the above-described embodiments, and can be appropriately modified. For example, the material, film composition, pattern composition, and material group of the above embodiments. The number, size, processing procedure, and the like are merely examples, and various modifications can be made within the scope of the effects of the present invention. Further, appropriate modifications can be made without departing from the scope of the present invention. Fig. 1 is a light transmission curve in the semi-transmissive field of the photomask. Fig. 2 is an example of a device for displaying the exposure conditions of the exposure machine. Fig. 3(a) is a plan view showing the TFT pattern, the third (Fig. 3) b) Fig. 3(a) is a cross-sectional view along line I Π B-111B. Fig. 4 is an enlarged view of the light transmission curve shown in Fig. 1. Fig. 5 is a relationship between channel width and effective transmittance Fig. 6 is a graph showing the relationship between the exposure amount and the photoresist residual film value. 201030451 Fig. 7 is a graph showing the relationship between the effective exposure amount and the photoresist residual film value. The 8th (a) to (d) diagram shows the present diagram. The film composition of the multi-step dimming cover of the embodiment of the invention. Figures 9(a) to (d) show the pattern composition of the multi-step dimming cover of the embodiment of the present invention.

Fig. 10 is a view showing a transfer pattern for manufacturing a TFT for a liquid crystal display device. 11(a) to (e) are diagrams showing the steps at the time of pattern formation shown in Fig. 10 [Major component symbol description] 1 to light source; 2 to illumination optical system; 3~ reticle; 3a~ reticle holder; 4~piece objective system; 4a~analog mirror; 4b~image mirror; 5~shooting device; 6~field shrinkage valve; 7~opening shrink valve; 11~computing device; 12~display device; 13~frame; Control device; 31 201030451 15~ mobile operating device; 21~ transparent substrate; 22~ semi-transparent film; 2 3~ light shielding film; 31~ transparent substrate; 3 2~ light shielding film; 33~ reflection preventing film; 34~1 Semi-transmissive film; 35~2nd semi-transmissive film; 41~multi-step dimming cover; 42~ liquid crystal display device TFT transfer pattern; 42a~ pixel pattern field; 42b~ peripheral circuit pattern field; 51~glass Substrate; 52~ semi-transparent film; 5 3~ light-shielding film; 53a~ corresponding to the pattern of the light-shielding field; 54~ photoresist film; 54a~ corresponding to the photoresist pattern in the shading field;

Aa~channel area;

Ab ~ source / bungee field; B ~ 1st semi-transmissive portion; C ~ 2nd semi-transmissive portion; W c ~ line width is small; 32 201030451

Wd~ line width;

Pc~monolayer film;

Pd to the pattern below the analysis limit c to the first semi-transmissive portion; d to the second semi-transmissive portion. 33

Claims (1)

201030451 VII. Patent application scope: 1. A multi-step dimming cover having a light-shielding film formed by shielding on a transparent substrate and a semi-transparent film through which a part of the exposure is transmitted has a light-transmitting field and shading a transfer pattern in the field and the semi-transmissive region, wherein the semi-transmissive region of the transfer pattern includes a first semi-transmissive portion having a first effective transmittance and a second effective transmittance different from the first effective transmittance In the second semi-transmissive portion, the first effective transmittance and the second effective transmittance of the transfer pattern are set such that after the photomask is used to expose and transfer the transfer pattern on the photoresist film on the object to be transferred, The portion of the photoresist pattern developed by the photoresist film corresponding to the first semi-transmissive portion and the second semi-transmissive portion has substantially the same photoresist residual film value. The multi-step dimming cover of claim 1, wherein the first effective transmittance and the second effective transmittance are lines using the first semi-transmissive portion and the second semi-transmissive portion Wide, shape, and semi-transparent film 3. The film transmittance is composed of the first semi-transmissive portion and the semi-transparent film of the above-mentioned first embodiment. The multi-step dimming cover of the present invention has a semi-transmissive portion which is a multi-step dimming cover as described in claim 2, wherein the semi-transmissive portion and the second semi-transparent portion are The light part is because of the semi-transmission: the difference in the laminated structure makes the film transmittance different. 5. The multi-step dimmer cover according to claim 2, wherein the second semi-transparent portion and the second semi-transmissive portion are respectively because the semi-transparent light is different from the film thickness of 201030451 « The rate is different. 6. The multi-step dimming cover of any one of clauses 1 to 5, wherein the ith semi-transmissive portion has a portion in which the unit pattern is repeatedly arranged, and the second semi-transmissive portion A portion having a unit pattern different from the above-described i-th semi-transmissive portion is repeatedly arranged. The multi-step dimmer cover according to any one of claims 1 to 5, wherein the semi-transmissive field is lost by two shading areas and is adjacent to the shading area. . 8. If you apply for a patent scope! The multi-step dimming cover according to any one of the items 5, wherein the semi-transmissive field is formed by a fine pattern having a resolution limit or less. A method for manufacturing a multi-step dimming cover, wherein a light-shielding film for shielding exposure provided on a transparent substrate and a semi-transmissive film for transmitting a part of the exposure are patterned to form a light-transmitting field, a light-shielding field, and a semi-transparent film. In the transfer pattern of the light region, the first semi-transmissive portion and the second semi-transmissive portion are formed by the transfer pattern in the reference A#, so that after the photomask is used to expose the transfer film on the transferred body, the transfer pattern is transferred. a photoresist pattern formed by developing the photoresist film, wherein the second semi-transmissive portion having a first effective transmittance and the second effective transmittance having a second effective transmittance different from the first effective transmittance are associated with the second effective transmittance The portion of the semi-transmissive portion has substantially the same photoresist residual film value. The method for manufacturing a multi-step dimming cover according to claim 9, wherein the first effective transmittance and the second effective transmittance are the first semi-transmissive portion and the second half. The line width and shape of the light transmitting portion are determined by at least one of 35 201030451 and the film transmittance of the semi-transmissive film. 11. The method for manufacturing a multi-step dimmer cover according to the first aspect of the invention, wherein the first semi-transmissive portion and the second half are formed by using a semi-transmissive film having a different film transmittance. Light transmitting portion. 12. The method of manufacturing a multi-step dimmer cover according to claim 10, wherein the first semi-transmissive portion having the different transmittance of the film and the second half are formed by using a semi-transmissive film having a different laminated structure. Light transmitting portion. The method for producing a multi-step dimming cover according to the first aspect of the invention, wherein the semi-transmissive film having a film thickness is formed to form the first semi-transmissive portion having a different film transmittance and the The second semi-transmissive portion. The method of manufacturing the multi-step dimming cover of the above-mentioned item, wherein the semi-transmissive field of the multi-step dimming cover is formed by a fine pattern below a resolution limit. . A pattern transfer method for transferring a transfer pattern onto a photoresist film on a processing body using a multi-step dimming cover as described in the above patent application. And 歹, only ❹ 36