TW200928578A - Gray tone mask blank and method of manufacturing the same, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern - Google Patents
Gray tone mask blank and method of manufacturing the same, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern Download PDFInfo
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- TW200928578A TW200928578A TW097136635A TW97136635A TW200928578A TW 200928578 A TW200928578 A TW 200928578A TW 097136635 A TW097136635 A TW 097136635A TW 97136635 A TW97136635 A TW 97136635A TW 200928578 A TW200928578 A TW 200928578A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Preparing Plates And Mask In Photomechanical Process (AREA)
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Abstract
Description
200928578 九、發明說明： 【發明所屬之技術領域】 本發明係關於使用遮光罩在被轉印體上的光阻中，形 成設置不同光阻膜厚部分的轉印圖案的轉移型樣方法、此 轉移型樣方法中使用的灰色調光罩及其製造方法、以及此 灰色調光罩的製造中使用的灰色調光罩基底。 現在，液晶顯示裝置（Liquid Crystal Display :以 下稱作LCD)的領域中，薄膜電晶體顯示裝置（Thin Film200928578 IX. OBJECT OF THE INVENTION: TECHNICAL FIELD The present invention relates to a transfer pattern method for forming a transfer pattern in which portions of different photoresist films are provided in a photoresist on a transfer target using a hood, A gray dimmer used in the transfer pattern method, a method of manufacturing the same, and a gray dimmer substrate used in the manufacture of the gray dimmer. Now, in the field of liquid crystal display devices (hereinafter referred to as LCDs), thin film transistor display devices (Thin Film)
Transistor Liquid Crystal Display :以下稱作 TFT-LCD)，相較於CRT(陰極射線管）’由於容易薄型化且 消耗電力低的優點，現在急速發展商品化。TFT-LCD具有 的概略構造，係矩陣狀排列的各晝素中排列TFT的構造的 TFT基板’與對應各畫素排列紅、綠、及藍的畫素圖案的 ❹ 彩色滤光器’在液晶層介於其間之下互相重疊。TFT-LCD 的製造步驟數多’光是TFT基板就使用5〜6枚的光罩來 製造。如此的狀況下，使用具有遮光部、透光部、及半透 光部的光罩（以下稱作灰色調光罩），提供削減在TFT基板 製造中使用的遮光罩枚數的方法。上述的方法，例如記載 於特開2002-107913號公報中。 在此’灰色調光罩的透光部、遮光部、及半透光部， 分別相當於露出透明基板的區域、在透明基板上形成遮住 曝光光的遮光膜的區域、以及在透明基板上形成遮光膜戍 2130-10017-PF 5 200928578 半透光膜’相較於透明基板的光透射率假設為100%時，降 低透射光量，而透射既定量的光的區域。 半透光部（以下稱作灰色調部），使用灰色調光罩在被 轉印體上轉印圖案之際，使透射的曝光光的透射量減低既 足ϊ，用以控制被轉印體上的光阻膜顯像後的殘膜量。上 述特開2002-1 07913號公報中記載，在透明基板上形成的 遮光膜中，在露光條件下形成解析界限以下的微細圖案， φ 作為半透光部。又，特開2005-37933號公報中記載，在 透明基板上形成透射一部分曝光光的半透光膜。 第1圖係用以說明使用灰階光罩的轉移型樣方法的剖 面圖。第1圖所示的灰色調光罩2〇，係用以在被轉印體 30上形成膜厚階段性不同的光阻圖案33。又，第1圖中 的符號32A、32B係指示在被轉印體3〇中堆疊在基板 上的膜。 第1圖所示的灰階光罩20,具有遮光部21，使用上 e 述灰色調光罩20時遮住曝光光（透射率約〇%);透光部 22, 透射露出透明基板24表面的曝光光；以及半透光部 23, 透光部的曝光光透射率為1〇〇%時，降低透射率至6⑽ 或_以下。第！圖所示的半透光部23，以透明基板μ 上形成的光半透射性的半透光膜構成’而透明基板以上 形成的遮光膜中，在使用遮光罩時的曝光條件下，也以形 成超過解析界限的微細圖案構成。 使用上述的灰色調光罩2〇時，由於遮光部Μ中實質 上不透射曝光光’半透光部23中降低曝光光，因此在被，Transistor Liquid Crystal Display (hereinafter referred to as TFT-LCD) is rapidly becoming more popular than CRT (cathode ray tube) because it is easy to be thinner and consumes less power. The TFT-LCD has a schematic structure in which a TFT substrate of a structure in which TFTs are arranged in a matrix, and a 彩色 color filter in which a pixel pattern of red, green, and blue is arranged corresponding to each pixel is in a liquid crystal. Layers overlap each other underneath. The number of manufacturing steps of the TFT-LCD is large. The light is manufactured by using a photomask of 5 to 6 pieces for the TFT substrate. In such a case, a photomask having a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion (hereinafter referred to as a gray dimming cover) is used, and a method of reducing the number of hoods used for manufacturing the TFT substrate is provided. The above method is described, for example, in JP-A-2002-107913. Here, the light transmitting portion, the light shielding portion, and the semi-transmissive portion of the gray dimming cover correspond to a region where the transparent substrate is exposed, a region where a light shielding film that blocks the exposure light is formed on the transparent substrate, and a transparent substrate. Forming a light-shielding film 戍2130-10017-PF 5 200928578 When the light transmittance of the semi-transmissive film is assumed to be 100% compared to the transparent substrate, the amount of transmitted light is reduced, and a region of a certain amount of light is transmitted. The semi-transmissive portion (hereinafter referred to as a gray tone portion) reduces the transmission amount of the transmitted exposure light while using the gray dimming cover to transfer the pattern on the transfer target, and is used to control the object to be transferred. The amount of residual film after development of the photoresist film. In the light-shielding film formed on the transparent substrate, a fine pattern having an analytical limit or less is formed under the exposure conditions, and φ is a semi-transmissive portion. Further, JP-A-2005-37933 discloses that a semi-transmissive film that transmits a part of exposure light is formed on a transparent substrate. Fig. 1 is a cross-sectional view for explaining a transfer pattern method using a gray scale mask. The gray dimming cover 2'' shown in Fig. 1 is for forming a resist pattern 33 having a different film thickness stepwise on the transfer target body 30. Further, reference numerals 32A and 32B in Fig. 1 indicate films stacked on the substrate in the transfer target 3A. The gray scale mask 20 shown in Fig. 1 has a light shielding portion 21, and covers the exposure light (transmittance: about %) when the gray dimming cover 20 is used; the light transmitting portion 22 transmits the surface of the transparent substrate 24 And the semi-transmissive portion 23, when the light transmittance of the light-transmitting portion is 1%, reduces the transmittance to 6 (10) or _ or less. The first! The semi-transmissive portion 23 shown in the figure is formed of a semi-transmissive semi-transmissive film formed on the transparent substrate μ, and the light-shielding film formed on the transparent substrate or the like is exposed under the exposure conditions when the hood is used. A fine pattern structure exceeding the analysis limit is formed. When the above-mentioned gray dimming cover 2 is used, since the exposure light is substantially not transmitted in the light-shielding portion ’, the semi-transmissive portion 23 is lowered, so that
2130-10017-PF 200928578 轉印體3 0上塗佈的央阻胺;q由t丨 _ 元阻膜（使用正型光阻膜時），轉印後， 經過顯像％，對應遮光部21的部分膜厚變厚，對廡半透 光部23的部分膜厚變薄’對應透光部22的部分沒有：(殘 膜實質上不產生）’可以形成膜厚階段性不同（即，有段差 的光阻圖案3 3。 ❹ ❹ 、於是’在第1圖所示的光阻圖案33無膜的部分 被轉印體30中的例如膜32A及32B實施第！韻刻，以灰 化等除去薄的光阻圖案33的膜厚部分，此部分中 轉印體30中的例如膜32β實施第2蝕刻。於是，使用工 2的灰色調光罩2Q，藉由在被轉印體3G上形成膜厚階段 性不同的光聞案33,實施f知的2枚光罩的2130-10017-PF 200928578 The central resist amine coated on the transfer body 30; q is made of t丨_ element resist film (when a positive type resist film is used), after transfer, after development %, corresponding to the light shielding portion 21 The partial film thickness is increased, and the partial film thickness of the semi-transmissive portion 23 is reduced. The portion corresponding to the light-transmitting portion 22 is not: (the residual film is not substantially generated), and the film thickness can be formed in different stages (ie, there is The retardation pattern of the retardation pattern 3 3 ❹ 、 于 于 于 于 于 于 于 于 于 于 于 于 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 部分 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光The film thickness portion of the thin photoresist pattern 33 is removed, and for example, the film 32β in the transfer body 30 is subjected to the second etching in this portion. Thus, the gray dimming cover 2Q of the work 2 is used, on the transfer target 3G. Forming a light film 33 having a different film thickness in stages, and implementing two masks of the known
遮光罩枚數。 A 上述的光罩，應用於顯示裝置，特別是液晶顯示裝置 =膜電晶體(TFT)的製造’極有效。例如，可以以遮光 。形^成源極”及極，以半透光部23形成通道部。 细圖如上述’在曝光條件下使用解析界限以下的微 Ί案的灰色調光罩’用作顯示裝置製造用’特別是抓 =用的遮光罩變得有用起來。上述微細圖案型的灰色調 a ，具#可以以一次成膜的遮光膜形成遮光部及半透光 部的優點。不過，當設計微細圖案之時’除了選擇用以且 果的線及間距、或是所謂點的圖案，還必須預 刀掌握這些圖案的透射率控制。又，使用遮光罩製造 的資等)的圖案微細化、複雜化的同時，圖案 的貝科I膨脹，描繪機的負擔也變大起來。The number of hoods. A The above-mentioned photomask is extremely effective for use in a display device, particularly a liquid crystal display device = the manufacture of a film transistor (TFT). For example, you can use blackout. The shape is formed into a source and a pole, and a channel portion is formed by the semi-transmissive portion 23. The fine-grained image is as described above for the use of a micro-mask of a micro-file below the analytical limit under exposure conditions. It is useful to use the hood which is used for scratching. The above-mentioned fine pattern type gray tone a has the advantage that the light-shielding portion and the semi-light-transmitting portion can be formed by the light-shielding film formed at one time. However, when the fine pattern is designed 'In addition to selecting the lines and pitches for the sake of the fruit, or the so-called dot pattern, it is necessary to grasp the transmittance control of these patterns in advance. Moreover, the pattern of the hood manufactured by the hood is fine and complicated. The pattern of the Beco I swells, and the burden of the drawing machine also increases.
2130-10Q17-PF 7 200928578 對此，使用半透光瞑的灰色調光罩，沒有上述的資料 量的問題，由於圖案設計負擔較少，考慮今後多.採用。但， 半透光郤中’利用半透光膜時’如果不充分掌握膜物性並 控制的話’失去以微細圖案型的灰色調光罩所享的效果。 【發明内容】 因此，本發明的目的在於提供：第1，使用半透光膜 ❿的灰色調光罩中，形成如TFT的精緻圖案時，不損壞以微 細圖案型的灰色調光罩得到的性能，再現性佳且得到所要 的圖案的灰色調光罩及其製造方法；第2,灰色調光罩的 製以中使用的灰色調光罩基底；第3，使用灰色調光罩的 轉移型樣方法。 為了解決上述課題，本發明具有以下的結構。 [結構1] 一種灰色調光罩基底，對於被轉印體的曝光光的照射 φ 量依部位而選擇性降低，被轉印體上的光阻中，包含殘膜 值不同的部分，形成所要的轉印圖案，用以製造灰色調光 罩；上述灰色調光罩基底，在透明基板上具有半透光膜與 遮光膜，經由對光罩基底施行既定的圖案蝕刻，形成遮光 部、以半透光膜透射一部分曝光光的半透光部、以及沒有 膜的透光部，成為灰色調光罩；上述半透光膜，在基板面 内至少光罩圖案形成的區域内，曝光光透射率的分佈在 4. 0%以内。 [結構2] 2130-10Q17-PF 8 200928578 -種灰色調光罩基底，對於被轉印體的曝光光的照射 量依部位而選擇性降低，被轉印體上的光阻中，包含殘膜 值不同的部分，形成所要的轉印圖案，用以製造灰色調光 罩；上述灰色調光罩基底，在透明基板上具有半透光膜盘 遮光膜，經由對光罩基底施行既定的圖案钱刻，形成遮光 部、以半透光膜透射-部分曝光光的半透光部、以及沒有 膜的透光部，成為灰色調光罩；上述半透光膜的曝光光透 ❺射率在60%以下，且上述半透光膜，當照射曝光光時，在 基板面内至 >、光罩圖案形成的區域内，調整通過上述半透 光部的曝光光與通過上述透光部的曝光光的相位差至Μ 度以内。 [結構3 ] -種灰色調光罩基底’對於被轉印體的曝光光的照射 量依部位而選擇性降低，被轉印體上的光阻中，包含殘膜 值不同的部分，形成所要的轉印圖案，用以製造灰色調光 〇 罩；上述灰色調光罩基底，在透明基板上具有半透光膜與 遮光膜，經由對光罩基底施行既定的圖案蝕刻，形成遮光 部、以半透光膜透射一部分曝光光的半透光部、以及沒有 膜的透光部’成為灰色調光罩；上述半透光膜的曝光光透 射率在60%以下，且在基板面内至少光罩圖案形成的區域 内’面内相位差分佈在7. 8度以内。 [結構4] 結構1至3中任一結構所述的灰色調光罩基底，其 中’曝光光透射率為20〜60 %·。 2130—10017-PF 9 200928578 [結構5] 一種灰色調光罩的製造方法，使用結構丨至4中任一 結構所述的灰色調光罩基底，以圖案蝕刻形成上述遮光 部、透光部、以及半透光部。 [結構6] 一種灰色調光罩的製造方法，對於被轉印體的曝光光 的照射量依部位而選擇性降低，被轉印體上的光阻中，包 ❷含殘膜值不同的部分，形成所要的轉印圖案的灰色調光 罩，具有透光部、遮光部、以及透射一部分曝光光的半透 光部，其中，在透明基板上，形成遮光膜後，施行第^ 案蝕刻，在包含圖案蝕刻的遮光膜的基板全面形成半透光 膜，在上述半透光膜形成後藉由施行第2圖案蝕刻，對上 述半透光膜與上述遮光膜分別施行既定的圖案蝕刻，成為 灰色調光罩_L述半透光膜在基板面内至少光罩圖案开）成 的區域内，曝光光透射率的分佈調整在4. 〇%以内。 [結構7 ] 一種灰色調光罩的製造方法，對於被轉印體的曝光光 的照射量依部位而選擇性降低，被轉印體上的光阻中，包 含殘膜值不同的部分，形成所要的轉印圖案的灰色調光 罩〃有透光郤遮光部、以及透射一部分曝光光的半透 光部，其中’在透明基板上，形成遮光膜後，施行第^圖 案蝕刻，在包含圖案蝕刻的遮光膜的基板全面形成半透光 膜，在上述半透光膜形成後藉由施行第2圖案蝕刻，對上 述半透光膜與上述遮光膜分別施行既定的圖案蝕刻，成為 2130-10017-PF 10 200928578 灰色調光罩，上述半透光膜的曝光光透射率在60%以下， 且上述半透光膜，當照射曝光光時，在基板面内至少光罩 圖案形成的區域内，調整通過上述半透光部的曝光光與通 過上述透光部的曝光光的相位差至53度以内。 [結構8] -種灰色調光罩的製造方法，對於被轉印體的曝光光 的照射量依部位而選擇性降低，被轉印體上的光阻中，包 ❿含殘膜值不同的部分’形成所要的轉印圖案的灰色調光 罩’具有透光部、遮光部、以及透射一部分曝光光的半透 光部；其巾，在透明基板上，形成遮光膜後，施行第i圖 案蝕刻在包含圖案蝕刻的遮光膜的基板全面形成半透光 膜、在上述半透光膜形成後藉由施行第2圖案蝕刻，對上 述半透光模與上述遮光媒分別施行既定的圖案姓刻，成為 灰色調光罩；上述半透光媒的曝光光透射率在60%以下， 且在基板面内至少光罩圖案形成的區域内，面内相位差八 ❿佈調整在7. 8度以内。 刀 [結構9] —種灰色調光罩，對於被轉印體的曝光光的照射量依 部位而選擇性降低’被轉印體上的光阻中，包含殘媒值不 同的部分，形成所要的轉印圖案的灰色調光罩·其中 於在透明基板上形成的半透光膜及遮光琪，分別施行既 :::刻，形成遮光部、以半透光膜透射一部分曝光光 的+透光部、以及沒有膜的透光部；上述半透光部在基板 面内至少光罩圖案形成的區域内，曝光光透射率的分佈在 2130-l〇〇17^pp 200928578 4. 0%以内。 [結構10] 一種灰色調光罩，對於被轉印體的曝光光的照射量依 部位而選擇性降低，被轉印體上的光阻中，包含殘膜值不 同的部分，形成所要的轉印圖案，其中，對於在透明基板 上形成的半透光膜及遮光膜，分別施行既定的圖案蝕刻， 形成遮光部、以半透光膜透射一部分曝光光的半透光部、 Φ 以及沒有膜的透光部；上述半透光部的曝光光透射率在 60%以下，且上述半透光部，當照射曝光光時，在基板面 内至少光罩圖案形成的區域内，調整通過上述半透光部的 曝光光與通過上述透光部的曝光光的相位差至53度以内。 [結構11] 一種灰色調光罩，對於被轉印體的曝光光的照射量依 部位而選擇性降低，被轉印體上的光阻中，包含殘膜值不 同的部分，形成所要的轉印圖案；其中，對於在透明基板 Q 上形成的半透光膜及遮光膜，分別施行既定的圖案蝕刻， 形成遮光部、以半透光膜透射一部分曝光光的半透光部、 以及/又有膜的透光部；上述半透光部的曝光光透射率在 60%以下，且在基板面内至少光罩圖案形成的區域内，調 整面内相位差分佈在7· 8度以内。 [結構12] 種轉移型樣之方法，使用根據結構5至8中任一結 構中所述的製造方法所得到的灰色調光罩，或是結構9至 ,11中任一結構中所述的灰色調光罩，具有照射曝光光至被 2130-10017-PF 12 200928578 轉印體的曝光步驟，在被轉印體上形成包含殘膜值不同的 部分的既定轉印光阻圖案。 [結構13] 一種灰色調光罩基底的製造方法，對於被轉印體的曝 光光的照射量依部位而選擇性降低，被轉印體上的光阻 中，包含殘膜值不同的部分，形成所要的轉印圖案用以 製造灰色調光罩的灰色調光罩基底；上述灰色調光罩基 ❿底，在透明基板上具有半透光膜與遮光媒，經由對上述光 罩基底施行既定的圖案蝕刻，形成遮光部、以半透光膜透 射-部分曝光光的半透光冑、以纟沒有膜的透光部，成為 灰色調光罩；上述半透光膜的曝光光透射率為χ%,光罩圖 案形成的區Α内，域半透光膜的曝光光透射率分佈的容 許範圍為Y%時’係與叉聯動的值，而決定上述半透光膜的 膜質，使半透光部與透光部的邊界中產生的曝光光的相位 反轉為起因的透射率變動值，在γ%以内。 〇 根據本發明，利用使用半透光膜的灰色調光罩，可以 在被轉印體上形成所要的光阻圖案。特別是，經由半透光 部的曝光光透射率的控制，可以正確控制光阻的殘膜值， 即使關於多數同一圖案排列的遮光罩的面内的任何部 位，也可以形成滿足所要的殘膜要件的光阻圖案。又，使 用本發明的灰色調光罩基底，可以適當地製造本發明的灰 色調光罩。 又’使用本發明控制光罩圖案透射率的灰色調光罩， 藉由進行轉移型樣至被轉印體，可以在被轉印體上形成具 2130-10017-PF 13 200928578 有局精度的光阻殘膜值的轉印圖案。 【實施方式】 以下’根據圖面說明用以實施本發明的最佳實施例。 [第一實施例]2130-10Q17-PF 7 200928578 In this case, the use of a semi-transparent 灰色 gray dimming cover does not have the above-mentioned problem of the amount of data, and since the design burden is small, it is considered to be used in the future. However, when the semi-transmissive film is used, the effect of the fine-patterned gray dimmer is lost if the film properties are not sufficiently grasped and controlled. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide: First, in a gray dimming cover using a semi-transparent film, when a delicate pattern such as a TFT is formed, the gray dimming cover of a fine pattern type is not damaged. Gray dimming cover with good performance and reproducibility and obtaining desired pattern; and manufacturing method thereof; second, gray dimming cover base used for making gray dimming cover; third, transfer type using gray dimming cover Sample method. In order to solve the above problems, the present invention has the following configuration. [Structure 1] A gray dimming cover substrate in which the amount of irradiation φ of the exposure light to the transfer target is selectively lowered depending on the portion, and the photoresist on the transfer target includes a portion having a different residual film value, and the desired portion is formed. a transfer pattern for manufacturing a gray dimming cover; the gray dimming cover substrate having a semi-transparent film and a light shielding film on the transparent substrate, and performing a predetermined pattern etching on the photomask substrate to form a light shielding portion and a half The light transmissive film transmits a semi-transmissive portion of a portion of the exposure light and a light transmissive portion having no film to form a gray dimming cover; and the semi-transmissive film has an exposure light transmittance in a region where at least the mask pattern is formed in the substrate surface The distribution is within 4. 0%. [Structure 2] 2130-10Q17-PF 8 200928578 - A gray dimmer cover substrate, the amount of exposure light to the transfer target is selectively lowered depending on the portion, and the photoresist on the transfer target includes a residual film a portion having a different value, forming a desired transfer pattern for manufacturing a gray dimming cover; the gray dimming cover substrate having a semi-transmissive diaphragm light-shielding film on the transparent substrate, and performing a predetermined pattern on the base of the photomask Forming a light-shielding portion, a semi-transmissive portion that transmits a partial light to the semi-transmissive film, and a light-transmitting portion having no film to form a gray dimming cover; the exposure light transmittance of the semi-transmissive film is 60 In the semi-transmissive film, when the exposure light is irradiated, the exposure light passing through the semi-transmissive portion and the exposure through the light-transmitting portion are adjusted in the region of the substrate surface and in the region where the mask pattern is formed. The phase of the light is within the tolerance. [Structure 3] The amount of irradiation of the exposure light to the transfer target is selectively reduced depending on the portion, and the photoresist on the transfer target includes a portion having a different residual film value. a transfer pattern for fabricating a gray dimming cover; the gray dimming cover substrate having a semi-transparent film and a light shielding film on the transparent substrate, and performing a predetermined pattern etching on the photomask substrate to form a light shielding portion The semi-transmissive film transmits a semi-transmissive portion of a portion of the exposure light, and the light-transmitting portion ′ without the film becomes a gray dimming cover; the semi-transmissive film has an exposure light transmittance of 60% or less, and at least light in the substrate surface The in-plane phase difference is distributed within 7.8 degrees. [Structure 4] The gray dimmer substrate according to any one of Structures 1 to 3, wherein the 'exposure light transmittance is 20 to 60%·. 2130—10017-PF 9 200928578 [Structure 5] A method for manufacturing a gray dimming cover, wherein the light-shielding portion and the light-transmitting portion are formed by pattern etching using a gray dimming cover substrate of any one of the structures And a semi-transmissive portion. [Structure 6] A method of manufacturing a gray dimming cover, wherein the amount of exposure of the exposure light to the transfer target is selectively reduced depending on the portion, and the portion of the photoresist on the transfer target containing the residual film value is different. a gray dimming cover for forming a desired transfer pattern, comprising: a light transmitting portion, a light blocking portion, and a semi-transmissive portion transmitting a part of the exposure light, wherein the transparent etching is performed on the transparent substrate, and then etching is performed. A semi-transmissive film is formed on the entire surface of the substrate including the pattern-etched light-shielding film, and after the semi-transmissive film is formed, the semi-transmissive film and the light-shielding film are respectively subjected to predetermined pattern etching by performing the second pattern etching. The distribution of the light transmittance of the light is adjusted to be within 〇% within the area of the surface of the substrate. [Structure 7] A method of manufacturing a gray dimming cover, wherein the amount of exposure light to the transfer target is selectively reduced depending on the portion, and the photoresist on the transfer target includes a portion having a different residual film value. The gray dimming cover of the desired transfer pattern has a light-transmitting but light-shielding portion and a semi-transmissive portion transmitting a part of the exposure light, wherein 'on the transparent substrate, after the light-shielding film is formed, the second pattern etching is performed, and the pattern is included The semi-transmissive film is formed on the entire surface of the etched light-shielding film, and after the semi-transmissive film is formed, the semi-transparent film and the light-shielding film are respectively subjected to predetermined pattern etching by performing the second pattern etching, thereby becoming 2130-10017 -PF 10 200928578 Gray dimming cover, the semi-transmissive film has an exposure light transmittance of 60% or less, and the semi-transmissive film, when irradiated with exposure light, is in a region where at least the mask pattern is formed in the substrate surface, The phase difference between the exposure light passing through the semi-transmissive portion and the exposure light passing through the light-transmitting portion is adjusted to be within 53 degrees. [Structure 8] A method for producing a gray dimming cover, wherein the amount of exposure of the exposure light to the transfer target is selectively lowered depending on the portion, and the photoresist on the transfer target has a different residual film value. a part of the 'grey dimming cover forming a desired transfer pattern' has a light transmitting portion, a light blocking portion, and a semi-transmissive portion that transmits a portion of the exposure light; and a towel on which the ith pattern is applied after forming a light shielding film on the transparent substrate A semi-transmissive film is formed on the entire substrate of the light-shielding film including the pattern etching, and after the semi-transmissive film is formed, the second pattern etching is performed, and the semi-transmissive mode and the light-shielding medium are respectively subjected to a predetermined pattern. , the in-plane phase difference octagonal cloth is adjusted within 7.8 degrees, and the in-plane phase difference octagonal cloth is adjusted within 7.8 degrees. . Knife [Structure 9] A gray dimming cover, the amount of exposure of the exposure light to the transfer target is selectively lowered depending on the portion. The photoresist on the transfer target contains a portion having a different residual value. The gray dimming cover of the transfer pattern, wherein the semi-transparent film and the shading film formed on the transparent substrate are respectively:::: engraved, forming a light shielding portion, and transmitting a part of the exposure light by the semi-transmissive film a light portion and a light transmissive portion having no film; wherein the semi-transmissive portion has a distribution of exposure light transmittance in a region where at least the mask pattern is formed in the substrate surface, and the distribution of exposure light transmittance is within 2130-l〇〇17^pp 200928578 4. 0% . [Structure 10] A gray dimming cover, the amount of exposure of the exposure light to the transfer target is selectively lowered depending on the portion, and the photoresist on the transfer target includes a portion having a different residual film value to form a desired rotation. a printed pattern in which a semi-transparent film and a light-shielding film formed on a transparent substrate are respectively subjected to predetermined pattern etching to form a light-shielding portion, a semi-transmissive portion that transmits a part of the exposure light by the semi-transmissive film, Φ, and no film. The light transmissive portion has an exposure light transmittance of 60% or less, and the semi-transmissive portion is adjusted to pass through the half in a region where at least the mask pattern is formed in the substrate surface when the exposure light is irradiated The phase difference between the exposure light of the light transmitting portion and the exposure light passing through the light transmitting portion is within 53 degrees. [Structure 11] A gray dimming cover in which the amount of exposure of the exposure light to the transfer target is selectively lowered depending on the portion, and the photoresist on the transfer target includes a portion having a different residual film value to form a desired rotation. a printed pattern in which a semi-transparent film and a light-shielding film formed on the transparent substrate Q are respectively subjected to predetermined pattern etching to form a light-shielding portion, a semi-transmissive portion that transmits a part of the exposure light by the semi-transmissive film, and/or The translucent portion having the film; the semi-transmissive portion has an exposure light transmittance of 60% or less, and the in-plane phase difference is distributed within 7.8 degrees in a region where at least the mask pattern is formed in the substrate surface. [Structure 12] A method of transferring a pattern using the gray dimming mask obtained according to the manufacturing method described in any one of the structures 5 to 8, or the structure described in any of the structures 9 to 11, The gray dimming cover has an exposure step of irradiating the exposure light to the transfer body of 2130-10017-PF 12 200928578, and a predetermined transfer resist pattern including a portion having a different residual film value is formed on the transfer target. [Structure 13] A method of manufacturing a gray dimming cover base, wherein the amount of exposure light to the transfer target is selectively reduced depending on the portion, and the photoresist on the transfer target includes a portion having a different residual film value. Forming a desired transfer pattern for manufacturing a gray dimming cover base of a gray dimming cover; the gray dimming cover base has a semi-transparent film and a light shielding medium on the transparent substrate, and is provided for the base of the photomask The pattern is etched to form a light-shielding portion, a semi-transmissive ray that transmits a partial light to the semi-transmissive film, and a light-transmitting portion that has no film to form a gray dimming cover; the exposure light transmittance of the semi-transmissive film χ%, in the region formed by the mask pattern, when the allowable range of the exposure light transmittance distribution of the domain semi-transmissive film is Y%, the value of the linkage with the fork is determined, and the film quality of the semi-transmissive film is determined to be half The phase of the exposure light generated in the boundary between the light transmitting portion and the light transmitting portion is reversed to the transmittance variation value of the cause, and is within γ%. According to the present invention, a desired photoresist pattern can be formed on a to-be-transferred body by using a gray dimming cover using a semi-transparent film. In particular, the residual film value of the photoresist can be accurately controlled by the control of the exposure light transmittance of the semi-transmissive portion, and even if any portion in the plane of the hood of most of the same pattern is arranged, the desired residual film can be formed. The photoresist pattern of the element. Further, the gray tone mask of the present invention can be suitably produced by using the gray dimmer substrate of the present invention. Further, by using the gray dimming cover for controlling the transmittance of the reticle pattern of the present invention, by transferring the pattern to the object to be transferred, a light having a precision of 2130-10017-PF 13 200928578 can be formed on the object to be transferred. The transfer pattern of the residual film value. [Embodiment] Hereinafter, the best mode for carrying out the invention will be described based on the drawings. [First Embodiment]
第2A-2F圖顯示根據本實施例的灰色調光罩的製造步 驟剖面圖。本實施例中，使用具有遮光部、透光部、以及 半透光部的TFT基板製造用的灰色調光罩。 本實施例中使用的灰色調光罩基底，在透明基板24 上，依序形成例如包含矽化鉬的半透光膜26、以例如鉻為 成刀的遮光膜25’其上塗佈光阻而形成光阻膜27(參考 第2A圖）。除了以上述Cr(鉻）為主成分的材料，提供 si(石夕）、w(鎮）、A1(銘）等作為遮光膜25的材質。本實施 例中，遮光部的透㈣，由上料絲25及後述的半透 2膜26的堆疊層決定，經由分別選定膜材質及膜厚，設 定總和為光學濃度3. 〇以上。 、先，進行第1次的騎。騎中，通常，大多使用 電子線或光（單一波县_ 長先），本只施例中使用雷射光。使用 正型光阻作為上述来阻料 园电, 述先阻對於光阻膜27,描繪既定的元件 圖案（例如對應遮光部及半 崇的m安λ 透先。^的區域中，形成光阻圖 透# Α 顯像，形成對應遮光部及半 透先4的先阻圖案27(參考第⑼圖）。 牛 其次’上述光阻圖案π作 锈共卹π w L 作為姓刻光罩，餘刻露出的 透先。卩&域上的遮光膜25， 更餘刻半透光膜26，形成透Fig. 2A-2F is a cross-sectional view showing the manufacturing steps of the gray dimming cover according to the present embodiment. In the present embodiment, a gray dimming cover for manufacturing a TFT substrate having a light shielding portion, a light transmitting portion, and a semi-light transmitting portion is used. In the gray dimmer substrate used in the embodiment, a semi-transmissive film 26 containing, for example, molybdenum molybdenum is sequentially formed on the transparent substrate 24, and a photoresist is coated thereon by a light-shielding film 25' such as chromium. A photoresist film 27 is formed (refer to FIG. 2A). In addition to the material containing Cr (chromium) as a main component, si (Shi Xi), w (town), A1 (Ming), and the like are provided as the material of the light-shielding film 25. In the present embodiment, the transmission (four) of the light-shielding portion is determined by the stacking layer of the upper wire 25 and the semi-transparent film 26 to be described later, and the film thickness and the film thickness are selected to set the total optical density to 3. First, the first ride is performed. In riding, usually, electronic wires or light are used (single wave county _ long-term), and laser light is used in this embodiment. Using a positive-type photoresist as the above-mentioned resistance material, the first resistance is applied to the photoresist film 27, and a predetermined element pattern is drawn (for example, a photoresist is formed in a region corresponding to the light-shielding portion and the semi-acceptable m-λ. Figure through # Α development, forming a corresponding shading section and semi-transparent 4 pre-resistance pattern 27 (refer to Figure (9)). Niu Ciji 'the above-mentioned photoresist pattern π rusting π w L as the surname reticle, The light-transmissive film 25 on the 卩& field, and the semi-transparent film 26 are formed to form a transparent
2130-10017-PF 200928578 先部。使用鉻為主成分的遮光膜25 _，乾蝕刻或是溼蝕 刻都可以作為_手段’但本實施中利用祕刻。對半透 光膜26㈣刻纟同樣利發_。除去殘存的光 (參考第2C圖）。 茶 其次，基板全面形成與上述相同的光阻膜，進行第2 :的描繪。第2次的描繪中’在遮光部及透光部上描繪既 定的圖案，以形成光阻圖案。描繪後，藉由進行顯像，在2130-10017-PF 200928578 First. A light-shielding film 25 _ using chromium as a main component, dry etching or wet etching can be used as a means, but in this embodiment, a secret is used. The semi-transmissive film 26 (four) is also engraved. Remove the remaining light (refer to Figure 2C). Tea Next, the same photoresist film as described above was formed on the entire substrate, and the second drawing was performed. In the second drawing, a predetermined pattern is drawn on the light shielding portion and the light transmission portion to form a photoresist pattern. After painting, by performing imaging,
對應遮光部及透光部的區域上形成光阻圖案28(參考第⑽ 圖）。 其次’以上述光阻圖案28為蝕刻光罩，蝕刻露出的 半透光部區域上的遮光膜25，露出半透光膜26而形成半 透光部（參考第2E圖）。於是，除去殘存的光阻圖案，在 透明基板24上，完成灰色調光罩，具有半透光膜26與遮 光膜25的堆疊膜所構成的遮光部21、露出透明基板24 的透光部22、以及半透光膜26所構成的半透光部23(參 考第2F圖）。 本發明在透明基板24上包含依序具有半透光膜26與 遮光膜25的灰色調光罩基底（第2A圖）。上述灰色調光罩 基底（第2A圖）中的半透光膜26，對於透明基板24的曝光 光的透射量’具有1〇〜8〇 %左右的透射量’最好是20〜60% 的透射量。 提供翻（Mo)化合物、si、w、A1等，作為上述半透光 膜26的材質。有氧化鉻（Cr〇x)、氮化鉻（CrNx)、氮氧化 鉻（CrOxN)、氟化鉻（〇Fx)、這些包含碳、氫的化合物， . 2130-10017-PF 15 200928578 作為絡化合物。包含其他的MoSi x、MoSi的氮化物、氧化 物、氮氧化物、碳化物等，作為Mo化合物。又，形成的 遮光罩上的半透光部的透射率’經由選定上述半透光膜Μ 的膜材質與膜厚而設定。在此，第2E圖中，由於钱刻半 透光膜26上的遮光膜25,半透光膜與遮光膜中，具有對 於飯刻劑的蝕刻選擇性是有利的。因此，半透光膜的素材 中’隶好是Mo化合物，使用MoSix(透射率50%)。A photoresist pattern 28 is formed on a region corresponding to the light shielding portion and the light transmission portion (refer to the (10)th drawing). Next, the light-shielding film 25 on the exposed semi-transmissive region is etched by using the photoresist pattern 28 as an etching mask, and the semi-transmissive film 26 is exposed to form a semi-transmissive portion (refer to Fig. 2E). Then, the remaining photoresist pattern is removed, and the gray dimming cover is completed on the transparent substrate 24, and the light shielding portion 21 including the stacked film of the semi-transmissive film 26 and the light shielding film 25 and the light transmitting portion 22 exposing the transparent substrate 24 are formed. And a semi-transmissive portion 23 composed of the semi-transmissive film 26 (refer to FIG. 2F). The present invention comprises a gray dimming cover substrate (Fig. 2A) having a semi-transmissive film 26 and a light shielding film 25 in this order on the transparent substrate 24. The semi-transmissive film 26 in the gray dimming cover substrate (Fig. 2A) has a transmission amount of about 1 〇 to 8 〇 % for the transmittance of the exposure light of the transparent substrate 24, which is preferably 20 to 60%. Transmittance. A turning (Mo) compound, si, w, A1 or the like is provided as a material of the semi-transmissive film 26. There are chromium oxide (Cr〇x), chromium nitride (CrNx), chromium oxynitride (CrOxN), chromium fluoride (〇Fx), these compounds containing carbon and hydrogen, . 2130-10017-PF 15 200928578 as a complex compound . Other MoSi x or MoSi nitrides, oxides, nitrogen oxides, carbides, and the like are contained as the Mo compound. Further, the transmittance ' of the semi-transmissive portion on the formed hood is set by selecting the film material and film thickness of the semi-transmissive film 。. Here, in Fig. 2E, since the light-shielding film 25 on the semi-transmissive film 26 is etched, it is advantageous in the semi-transmissive film and the light-shielding film to have etching selectivity for the rice cooker. Therefore, in the material of the semi-transmissive film, 'the compound is Mo, and MoSix (transmittance: 50%) is used.
又，使用根據本發明得到的灰色調光罩，通常使用 365mn(i線）〜436nm(g線）的曝光波長區域的曝光光，作 為轉移型樣至被轉印體時的曝光光。 又，遮光膜25的素材，採用以為主成分的素材。在 此，遮光膜25’由於具有反射防止功能，在膜厚方向可以 組成不同。例如，金屬鉻構成的層上’堆疊氧化鉻（Cr〇x)， 或是金屬鉻構成的層上堆疊氮氧化鉻（Cr〇xNy)，或氮化鉻 (Cr*Nx)構成的層上堆疊金屬鉻、氧化鉻（Cr〇x).可以適 用。在此，堆叠層可以是具有明確邊界的堆疊層，或是包 含不具有明確邊界的組成傾斜的結構。藉由調整此組成及 膜厚可以降低對描繪光的表面反射率。對於遮光膜的描 續光的表面反射率可以為1f) , r 〇 _ 和千』以為10〜15%左右。又，對曝光光施 行的反射防止膜，可以應用眾所周知的遮光獏，作為上 遮光膜。 ~ 述半透光膜26,在基板面内至少 曝光光透射率的分佈（透射率變 於是，本發明中，上 光罩圖案形成的區域内， 動）在4. 0%以内。.Further, with the gray dimming mask obtained according to the present invention, exposure light in an exposure wavelength region of 365 mn (i line) to 436 nm (g line) is usually used as the exposure light when transferring the pattern to the object to be transferred. Moreover, the material of the light-shielding film 25 is a material which is a main component. Here, the light shielding film 25' has a reflection preventing function and can have a different composition in the film thickness direction. For example, on a layer composed of metallic chromium, 'stacked chromium oxide (Cr〇x), or a layer composed of metallic chromium, stacked on a layer of chromium oxynitride (Cr〇xNy) or chromium nitride (Cr*Nx) Metal chromium, chromium oxide (Cr〇x). Applicable. Here, the stacked layer may be a stacked layer having a clear boundary or a structure including a composition having an undefined boundary. The surface reflectance to the depicted light can be reduced by adjusting this composition and film thickness. The surface reflectance of the light of the light-shielding film may be 1f), and r 〇 _ and thousands may be about 10 to 15%. Further, as the antireflection film for the exposure light, a well-known light-shielding film can be applied as the upper light-shielding film. The semi-transmissive film 26 has a distribution of light transmittance at least in the surface of the substrate (the transmittance is changed, and in the present invention, the region in which the mask pattern is formed) is within 4.0%. .
2130-10017-PF 16 2009285782130-10017-PF 16 200928578
求的既定標準規格的電子裝置。An electronic device of a predetermined standard specification.
印體30, 色調光罩，藉由執行如帛i圖的轉移型樣至被轉 可以在被轉印體上形成具有高精度的光阻殘膜值 的轉印圖案（光阻圖案33)。 ^又，第1圖及第2F圖所示的遮光部21、透光部22、 半透光部23的圖案形狀始終是代表性的一範例，當然主 旨並非限定本發明於此。 [第一實施例] 第3A-3F圖，顯示根據本實施例的灰色調光罩的製造 〇 步驟的剖面圖。本實施例中，也使用包括遮光部、透光部、 以及半透光部的TFT基板製造用的灰色調光罩。 使用的灰色調光罩，在透明基板24上，形成例如以 絡為主成分的遮光膜25，其上塗佈光阻而形成光阻膜 27(參考第3A圖）。與第一實施例相同，除了以上述Cr(鉻） 為主成分的材料，提供Si (矽）、W(鎢）、A1 (鋁）等作為遮 光膜25的材質。本實施例中’遮光部的透射率，由上述 遮光膜25及後述的半透光膜26的堆疊層決定，經由分別 選定膜材質及膜厚，設定總和為光學濃度3. 0以上。 2130-1〇〇17-pF 17 200928578 又，本實施例中，如以下的說明，上述遮光膜巧的 圖案形成後’包含上述遮光膜圖案的基板全面形成半透 光膜。 首先，進行第1次的描繪。使用正型光阻作為上述光 阻。於是，對於光阻膜27，描繪既定的元件圖案(例如對 應遮光部及半透光部的區域中，形成光阻圖案的圖案 描緣後’藉由進行顯像，形成對應遮光部及半透光部 的光阻圖案27(參考第3B圖）。 其次’以上述光阻圖t 27 &钱刻光罩，餘刻遮光膜 25,形成遮光膜圖案。使用以鉻為主成分的遮光膜託時， 乾㈣或是㈣刻都可以作為㈣手段’但本實施中利用 渥姓刻。 除去殘存的光阻圖案後（參考第％圖），包含基板以 上的遮光膜圖案’全面形成半透光膜26(參考第抑圖）。 半透光膜26,對於透明基板24的曝光光的透射量， Φ具有1〇〜8〇%左右的透射量，最好是20〜60%的透射率。 半透光膜26的材質與第一實施例相同，但本實施例 中採用包含錢鐘成膜產生的氧化鉻的半透光模（曝光光透 射率40%)。 其次，上述半透光膜26上形成與上述相同的光阻， 進行第2次的描緣。第2次的描緣中，在遮光部及透光部 上描繪既定的圖案，形成光阻圖案。描繪後，藉由進行顯 像，在對應遮光部及本@ $ i尤4及牛透先部的區域中形成 28(參考第3E圖）。 . 圃系 2130-10017-ρρ 200928578 其次，以上述光阻圖案28為蝕刻光罩，蝕刻露出的 半透光部區域上的半透光膜26及遮光膜25的堆疊層，形 成透光部。本實施例利用溼蝕刻作為此時的蝕刻手段。於 是，除去殘存的光阻圖案，在透明基板24上，完成灰色 調光罩，具有遮光膜25與半透光膜26的堆疊膜所構成的 遮光部21、露出透明基板24的透光部22、以及半透光膜 26所構成的半透光部23(參考第3F圖）。 〇 於是，本實施例中，上述半透光膜26,在基板面内至 少光罩圖案形成的區域内，曝光光透射率的分佈（透射率 變動）也調整在4. 0%以内。 根據上述本實施例，依上述第3A_3F圖的步驟，製造 灰色調光罩，藉此可以降低遮光罩的半透光膜的透射率 變動的影#。結果，即使關於多數同一圖案排列的遮光罩 的面内的任何部位，都可以形成滿足所要的殘膜要件的光 阻圖案。於是，變得容易製造適合滿足圖案微細化要求的 φ 既定標準規格的電子裝置。 使用根據以上本實施例所得到的控制遮光罩圖案透 射率的灰色調光罩，藉由執行如第丨圖的轉移型樣至被轉 印體30’可以在被轉印體上形成具有高精度的光阻殘膜值 的轉印圖案（光阻圖案33)。 如上所述’使用根據本發明所得到的灰色調光罩，通 常使用365nm(i線）〜436nm(g線）的曝光波長區域的曝光 光，作為轉移型樣之際的露光光。上述半透光族26，對於 透明基板24的曝光光的透射量，具有6〇%以下的透射量， 2130-10017-pf 19 200928578 本實施例中，根據使用得到的光阻圖案圖案蝕刻之際的效 率（容易選擇過度蝕刻時間等）觀點，20〜60%的透射率特 別理想。 又’上述第一及第二實施例中，對於透射率的控制， 以下說明本發明者得到的見解。The print 30, the tone mask, can be formed on the transfer target by a transfer pattern (resist pattern 33) having a high-precision photoresist residual film value by performing a transfer pattern such as a transfer pattern. Further, the pattern shapes of the light shielding portion 21, the light transmitting portion 22, and the semi-light transmitting portion 23 shown in Figs. 1 and 2F are always representative examples, and the present invention is not limited thereto. [First Embodiment] Figs. 3A-3F are cross-sectional views showing the steps of manufacturing the gray dimming cover according to the present embodiment. In the present embodiment, a gray dimming cover for manufacturing a TFT substrate including a light shielding portion, a light transmitting portion, and a semi-light transmitting portion is also used. In the gray dimming mask to be used, a light-shielding film 25 having, for example, a main component is formed on the transparent substrate 24, and a photoresist is applied thereon to form a photoresist film 27 (refer to Fig. 3A). As in the first embodiment, Si (矽), W (tungsten), A1 (aluminum) or the like is provided as a material of the light-shielding film 25, except for the material containing Cr (chromium) as a main component. In the present embodiment, the transmittance of the light-shielding portion is determined by the light-shielding film 25 and the stacked layer of the semi-transmissive film 26 to be described later, and the film thickness and the film thickness are selected to set the total optical density to 3.0 or more. 2130-1〇〇17-pF 17 200928578 Further, in the present embodiment, as described below, the substrate including the light-shielding film pattern after the formation of the light-shielding film is formed into a semi-transmissive film. First, the first drawing is performed. A positive photoresist is used as the above photoresist. Then, the photoresist film 27 is drawn with a predetermined element pattern (for example, in the region corresponding to the light-shielding portion and the semi-transmissive portion, after patterning of the photoresist pattern is formed), by performing development, a corresponding light-shielding portion and a semi-transparent portion are formed. The photoresist pattern 27 of the light portion (refer to FIG. 3B). Next, the light-shielding film is formed by the above-mentioned photoresist pattern t 27 & money mask, and a light-shielding film pattern is formed. A light-shielding film mainly composed of chromium is used. For the time of support, dry (four) or (four) can be used as (four) means 'but in this implementation, use the surname. After removing the residual photoresist pattern (refer to the % map), the light-shielding film pattern above the substrate is formed to be semi-transparent. The light film 26 (refer to the figure). The semi-transmissive film 26 has a transmission amount of about 1 〇 to 8 〇 %, preferably 20 to 60% of the transmittance of the exposure light of the transparent substrate 24 . The material of the semi-transmissive film 26 is the same as that of the first embodiment, but in the present embodiment, a semi-transmissive mold (exposed light transmittance of 40%) containing chromium oxide produced by the film formation of the bell is used. The same photoresist as described above was formed on the film 26, and the second stroke was performed. In the drawing, a predetermined pattern is drawn on the light-shielding portion and the light-transmitting portion to form a photoresist pattern. After the drawing, the image is imaged, and the corresponding light-shielding portion and the area of the front portion and the front portion of the cow Form 28 (refer to FIG. 3E). 圃 2130-10017-ρρ 200928578 Next, the photoresist pattern 28 is used as an etch mask to etch the semi-transmissive film 26 and the light-shielding film on the exposed semi-transmissive region. The stacked layer of 25 forms a light transmitting portion. In this embodiment, wet etching is used as an etching means at this time. Thus, the remaining photoresist pattern is removed, and a gray dimming cover is completed on the transparent substrate 24, having a light shielding film 25 and a half. The light-shielding portion 21 formed of the stacked film of the light-transmitting film 26, the light-transmitting portion 22 exposing the transparent substrate 24, and the semi-light-transmitting portion 23 formed of the semi-transmissive film 26 (refer to FIG. 3F). In the above-described embodiment, the semi-transmissive film 26 is adjusted to have a distribution of light transmittance (transmittance variation) in a region where at least the mask pattern is formed in the substrate surface. In the above step 3A_3F, a gray dimming cover is manufactured, whereby In order to reduce the variation of the transmittance of the semi-transmissive film of the hood, it is possible to form a photoresist pattern satisfying the desired residual film requirement even for any portion in the plane of the hood in which most of the same pattern is arranged. It is easy to manufacture an electronic device of a predetermined standard size that satisfies the requirements for pattern miniaturization. Using the gray dimming mask for controlling the transmittance of the hood pattern obtained according to the above embodiment, by performing the transfer as shown in FIG. The pattern to the transfer target 30' can form a transfer pattern (resist pattern 33) having a high-resistance photoresist residual film value on the object to be transferred. As described above, 'using the gray tone obtained according to the present invention' As the photomask, exposure light in an exposure wavelength region of 365 nm (i line) to 436 nm (g line) is usually used as the exposure light at the time of transfer pattern. The semi-transmissive group 26 has a transmission amount of 6% or less for the amount of transmission of the exposure light to the transparent substrate 24, and 2130-10017-pf 19 200928578. In the present embodiment, the etching is performed according to the pattern of the photoresist pattern used. The efficiency (easy to choose over-etching time, etc.), the transmittance of 20 to 60% is particularly desirable. Further, in the first and second embodiments described above, the findings obtained by the inventors will be described below for the control of the transmittance.
❹ 第4圖顯示半透光部中使用微細圖案的TFT製造用的 灰色調光罩的一範例。在此，根據使用微細圖案的半透光 部，考慮形成通道部的情況。圖示的測試圖案中，假設半 透光部的寬A=3/zm(微米），中央線的線寬B=1//m的情況 下，备申央的線寬B超過〇.l〇ym變動時，tft製造時的 條件的界限顯著變窄，或是，TFT性能不能得到安定性。 因此，線寬分佈在〇.l〇Ain以下為基準。 另方面，使用半透光膜再現同樣的圖案的情況中， 檢討如何設計半透光膜。 第4圖的中央的線寬刚nm(毫微米）〜+_四 的範圍内變動的各情況中，帛5圖顯示對應第4圖的位置 (卿出⑻中的曝光光的透射率，第6圖係對於中 B的變動，顯示透射率變化圖。 第5、6圖中，對於上述微細圖案的線寬 :率的變動時’當透射率變動超過4.。%，成 = 寬分佈的上限0.Π)㈣的透射率變動。即， 述線 讀取的，設計半透光^ 從第6圖所 域中，一率變::4.=:内案的區 用微細圖案所發揮的同等的通道部特性？於：中發揮與使 、疋，由於可以❹ Fig. 4 shows an example of a gray dimming cover for manufacturing a TFT using a fine pattern in a semi-transmissive portion. Here, the case where the channel portion is formed is considered in accordance with the semi-transmissive portion using the fine pattern. In the test pattern shown, assuming that the width of the semi-transmissive portion is A=3/zm (micrometer) and the line width of the center line is B=1//m, the line width B of the preparation center exceeds 〇.l〇. When ym is changed, the boundary of the condition at the time of tft manufacture is remarkably narrowed, or the performance of the TFT cannot be stabilized. Therefore, the line width distribution is below 〇.l〇Ain as a reference. On the other hand, in the case where the same pattern is reproduced using a semi-transparent film, it is reviewed how to design a semi-transparent film. In the case where the line width in the center of the fourth figure varies from the range of nm (nanometer) to +_4, the map of Fig. 5 shows the position corresponding to the fourth figure (the transmittance of the exposure light in the output (8), 6 shows a change in transmittance for a change in the middle B. In the fifth and sixth figures, the line width of the fine pattern: when the rate fluctuates, 'when the transmittance fluctuates more than 4.%, the width = the width distribution Upper limit 0. Π) (4) Transmittance variation. That is, when the line is read, the design is semi-transparent. From the field of Fig. 6, the rate is changed:: 4. =: The area of the inner case The equivalent channel characteristics exhibited by the fine pattern? In: play and make, 疋, because
2130-10017-PF 20 200928578 降低遮光罩的半透光膜的透射率變動，結果，即使關於多 數同一圖案排列的遮光罩的面内的任何部位，也可以得到 滿足所要的殘膜要件的光阻圖案，變得容易製造適於滿足 圖案微細化要求的既定標準規格的電子裝置。 又’產生上述透射率變動的原因有幾個。例如，半透 光膜的膜厚不均一、以及組成不均一。半透光膜的組成不 均一時，部分透射率變動。特別是，大型（例如一邊 1 000mm(毫米）以上的液晶顯示裝置用）的話，均一成膜的 難度變高。因此，以濺鍍裝置等的控制等謀求成膜條件的 面内均一化的同時，一定要經由檢查測出基準上不適合 者。透射率，經由透射率測定器，關於面内的複數處，照 射相當於轉移型樣使用的曝光光的光時，測定透射率，並 使用確認滿足上述基準者。 又，通過透光部與半透光部的光相位差，是引起透射 率變動的原因。 第7A-7C圖係關於分別具有透射率為2〇%、4⑽、6⑽ 的半透光部的各灰色調光罩，對於透過此半透光膜的光 量，檢討相位差的影響。即，第7A、”及7(：圖，關於分 別具有透射率為20%、40%、60%的半透光部的各灰色調光 罩對於透過此半透光膜的相位差，顯示每個位置的透射 光量變動的相關關係。又，例如在第7A圖中，「2〇_〇45」 係顯示透射率2⑽，相位差45度的情況。又，第7〇圖係^ 顯示第7A-7C的橫軸與灰色調光罩的各部之間的位置關2130-10017-PF 20 200928578 Reduces the transmittance variation of the semi-transmissive film of the hood, and as a result, even in any part of the surface of the hood in which most of the same pattern is arranged, the photoresist which satisfies the desired residual film element can be obtained. The pattern makes it easy to manufacture an electronic device of a predetermined standard specification suitable for meeting the requirements for pattern miniaturization. Further, there are several reasons for the above-described change in transmittance. For example, the film thickness of the semi-transmissive film is not uniform and the composition is not uniform. When the composition of the semi-transmissive film is not uniform, the partial transmittance varies. In particular, when it is large (for example, for a liquid crystal display device of 1 000 mm or more), the difficulty of uniform film formation becomes high. Therefore, it is necessary to make the in-plane uniformity of the film formation conditions uniform by the control of the sputtering apparatus or the like, and it is necessary to pass the inspection and measurement criteria. The transmittance is measured by the transmittance measuring device when the light corresponding to the exposure light used in the transfer pattern is irradiated with respect to a plurality of in-planes, and the transmittance is measured and confirmed to satisfy the above criteria. Further, the optical phase difference between the light transmitting portion and the semi-light transmitting portion causes a change in transmittance. Figs. 7A-7C are diagrams showing the respective gray dimmers having semi-transmissive portions having transmittances of 2%, 4, 10, and 6 (10), and the influence of the phase difference on the amount of light transmitted through the semi-transmissive film. That is, 7A, ", and 7 (:, for each of the gray dimmers having the semi-transmissive portions having transmittances of 20%, 40%, and 60%, respectively, for the phase difference transmitted through the semi-transmissive film, display per Further, for example, in Fig. 7A, "2〇_〇45" shows a transmittance of 2 (10) and a phase difference of 45 degrees. Further, the seventh diagram shows that the 7A is displayed. The position between the horizontal axis of the -7C and the parts of the gray dimmer
2130-10017-PF 200928578 第7A-7C圖中的任一情況下，半透光部與透光部的邊 界近旁（參考第7D圖），由於半透膜對透明基板有相位差 影響’可以看到透射光量的變化。特別是，關於透射率高 者(6〇幻’透射光量的上下變動大。因此，考慮透射率_ 為灰階光罩中使用的半透光膜的實質透射率上限時，考慮 此時的透射率變動，以及被兩、乐 、 及起因於透射率變動而產生的被轉 印體上的光阻圖案的形肤旦赍，σ & & 办狀吳常，只要決定膜中容許的透射 率變動的上限決定即可。2130-10017-PF 200928578 In any of the cases of 7A-7C, the semi-transmissive portion is close to the boundary of the light-transmitting portion (refer to Figure 7D), because the semi-transmissive film has a phase difference effect on the transparent substrate. The change in the amount of transmitted light. In particular, regarding the high transmittance (6 〇 ' 'the amount of transmitted light varies up and down. Therefore, considering the transmittance _ is the upper limit of the substantial transmittance of the semi-transmissive film used in the gray scale reticle, consider the transmission at this time. The rate variation, as well as the shape of the photoresist pattern on the transferred body caused by the change of the transmittance, and the σ &&& The upper limit of the rate change can be determined.
又’第8A、8B及8C圖更解析有關上述半透光部與透 光部的邊界近旁產生的曝光光透射量的變動。即，第以、 8B及8C圖’分別顯示在第7A、”及7C圖中，對於相位 差，在半透光部與透光部的邊界，透射光量的極大值 與極小值（min)的差的關係圖。 又，使用第7A-7C圖所示的位置6〜8 # m部分的最大 值作為極大值（Max)，位置8〜10^m部分的最小值作為極 小值（m i η)。 根據第8A-8C圖的曲線圖考察時，造成透射率變動 4.0%(透射光量（Maxiin)為〇.〇4〇)的相位差，以第8α圖 所示的半透光部的透射率20%的灰色調光罩為85度，以第 8Β圖所不的半透光部的透射率4〇%的灰色調光罩為μ 度，以第8C圖所示的半透光部的透射率6〇%的灰色調光罩 為53度。因此，考慮透射率6〇%為灰色調光罩中使用的半 透光膜的實質的透射率上限時，使用相位差不超過53度 的半透光膜的灰色調光罩，透光部與半透光部的邊界部分 2130-10017-PF 22 200928578 中產生的光阻圖案的段差，換算成透射率，由於不超過 4.0/，可以說是理想的灰色調光罩。 又’相位差的檢查中’使用相位差測定器，測定照射 相當於曝光光的光時的相位差、以及其面内的分佈，並使 用確5忍滿足上述基準者。 其次’根據基板面内的相位差變動，檢討同一面内多 數配置的圖案不均。即，根據上述第8A_8C圖的考察看出， φ 相位差在既定的範圍内（例如具有53度以内的相位差的半 透光膜）的話，抑制半透光部與透光部的邊界内產生在被 轉印體上的光阻圖案的形狀異常（突起），成為容許範圍。 不過使用同一遮光罩的同一面内，形成的光阻圖案的形 狀不一致的話，不方便。上述光阻圖案中，光阻膜厚的面 内不均時’光阻圖案的過度蝕刻、去灰的時序依各圖案而 不同’產生不能選擇最適合的時序等的不便。 第9A-9C圖係顯示分別在第7A_7C圖中，半透光部與 〇 透光部的邊界部分，相位差變動引起的透射光量變動的關 係’根據相位差的變動，概觀形成的光阻圖案所受的影響。 即’上述第7A-7C圖中，根據相位差的變化，光量最 丈影響（受到大的變化）為位置中8〜1〇 " m的部分，即半 透光。卩與透光部的邊界附近，透射光因相位反轉而抵 部分。 於是’第9A-9C圖以透射光量為縱軸，相位差為橫轴， 緣製此部分的透射光變化。同圖中的「min」，係上述位 8 1 〇 V πι部分的極小值。 2ΐ3〇'1〇〇17-ρρ 23 200928578 因此，根據第9A圖可看出，使用透射率2〇%的半透光 膜的灰色調光罩中’除了 min W曲線的直線部分，得到 y = -〇_ 〇〇212χ + 〇· 35805的函數（相關關係）。又，根據第9B 圖看出，使用透射率40%的半透光膜的灰色調光罩中，除 了 min的曲線的直線部分，得到y = -〇.00360x + 0.61 〇〇8的 函數（相關關係）。更，根據第9C圖看出，使用透射率6〇% 的半，光膜的灰色調光罩中，除了 min的曲線的直線部 ❹刀，付到y = -0· 00516x + 〇. 85417的函數（相關關係）。 在此，例如，使用透射率6〇%的半透光膜的灰色調光 罩中由於上述y 0. 00516x+0. 85417的函數（相關關係） 傾向，上述灰色調光罩中，提供4〇%的透射率變化〇 = 〇4) 的相位差變動（x)得到7.8度的容許範圍。又，相位差變 動的容許範圍，在透射率4〇%的半透光膜中為U1度在 透射率20%的半透光膜中為18.9度。 考慮實質的&色調光單的半冑光部的透射率的上限 ⑩為60%時’起因於灰色調光罩中面内的半透光膜的相位差 分佈在7. 8度以内的話，會滿足上述基準。 •即，使用相位差分佈不超過7.8度的半透光膜的灰色 調光罩中，在透光部與半透光部的邊界部分產生的光阻圖 案的段差’換算成透射率，由於不超過4. ，可以說是理 想的灰色調光罩。 又，本發明包含灰色調光罩基底的製造方法。灰色調 光罩基底，用於製造灰多^ ^ 成& Λ巴调先罩’選擇性降低對被轉印體 的曝光光照射量，被轉印體上的光ρ且中，包含殘膜值不同Further, in Figs. 8A, 8B, and 8C, the fluctuation in the amount of exposure light generated in the vicinity of the boundary between the semi-transmissive portion and the light-transmitting portion is further analyzed. That is, the first, 8B, and 8C graphs 'are shown in the 7A, and 7C graphs, respectively, for the phase difference, at the boundary between the semi-transmissive portion and the light-transmitting portion, the maximum value and the minimum value (min) of the transmitted light amount. In addition, the maximum value of the position 6 to 8 # m portion shown in Fig. 7A-7C is used as the maximum value (Max), and the minimum value of the position 8 to 10^m is taken as the minimum value (mi η). According to the graph of Fig. 8A-8C, the phase difference of the transmittance variation of 4.0% (the amount of transmitted light (Maxiin) is 〇.〇4〇), and the transmittance of the semi-transmissive portion shown by the 8th graph. 20% of the gray dimming cover is 85 degrees, and the gray dimming cover of the translucent portion of the semi-transmissive portion which is not shown in Fig. 8 is μ degrees, and the transmission of the semi-transmissive portion shown in Fig. 8C is shown. The gray dimmer with a rate of 6〇% is 53 degrees. Therefore, considering the transmittance of 6〇% as the upper limit of the transmittance of the semi-transparent film used in the gray dimming cover, the half with a phase difference of not more than 53 degrees is used. The gray dimming cover of the transparent film, the step of the photoresist pattern generated in the boundary portion of the transparent portion and the semi-transmissive portion 2130-10017-PF 22 200928578, converted into transmittance, It is an ideal gray dimming cover when it is not more than 4.0/. In the 'phase difference measurement', the phase difference measuring device is used to measure the phase difference when the light corresponding to the exposure light is irradiated, and the in-plane distribution. Then, it is determined that the above criteria are satisfied. Secondly, the pattern unevenness of most of the same planes is evaluated based on the phase difference variation in the plane of the substrate. That is, according to the above-mentioned 8A_8C diagram, the φ phase difference is predetermined. In the range (for example, a semi-transmissive film having a phase difference of 53 degrees or less), the shape of the photoresist pattern generated on the transfer target in the boundary between the semi-transmissive portion and the light-transmitting portion is suppressed from being abnormal (protrusion). However, it is inconvenient if the shape of the photoresist pattern formed in the same surface of the same hood is inconsistent. In the above-mentioned photoresist pattern, when the in-plane unevenness of the photoresist film is uneven, the photoresist pattern is over-etched. The timing of the ash removal differs depending on the pattern. The inconvenience that the most suitable timing is not selected is generated. The 9A-9C diagram shows the boundary portion between the semi-transmissive portion and the 〇-transmissive portion in the 7A_7C diagram, The relationship between the fluctuations in the amount of transmitted light due to the phase difference fluctuation is affected by the variation of the phase difference, which is the influence of the photoresist pattern formed. In the above-mentioned 7A-7C, the amount of light is most affected by the change in the phase difference. The large change is the part of the position 8~1〇" m, that is, the semi-transmission. Near the boundary between the 卩 and the light transmitting portion, the transmitted light is partially reversed by the phase reversal. Then the '9A-9C figure is transmitted. The amount of light is the vertical axis, and the phase difference is the horizontal axis, and the transmitted light changes in this portion. The "min" in the same figure is the minimum value of the above-mentioned bit 8 1 〇V πι. 2ΐ3〇'1〇〇17-ρρ 23 200928578 Therefore, it can be seen from Fig. 9A that in the gray dimming mask of the semi-transmissive film having a transmittance of 2% by %, except for the straight line portion of the min W curve, y = -〇_ 〇〇212χ + 〇· 35805 function (correlation). Further, as seen from Fig. 9B, in the gray dimming mask using the semi-transmissive film having a transmittance of 40%, in addition to the straight line portion of the curve of min, a function of y = -〇.00360x + 0.61 〇〇8 is obtained (correlation relationship). Further, according to Fig. 9C, using a half of the transmittance of 6〇%, the gray dimming mask of the light film, in addition to the linear portion of the curve of the min, is paid to y = -0· 00516x + 〇. 85417 Function (correlation). Here, for example, in the gray dimming cover using a semi-transmissive film having a transmittance of 6〇%, due to the above-described function (correlation) of y 0. 00516x+0. 85417, 4 〇 is provided in the above gray dimming cover. The phase difference variation (x) of % transmittance change 〇 = 〇 4) gives an allowable range of 7.8 degrees. Further, the allowable range of the phase difference change was 18.9 degrees in the semi-transmissive film having a transmittance of 4% in the semi-transmissive film having a transmittance of 4% by volume. When the upper limit of the transmittance of the semi-transparent film in the in-plane of the gray dimming cover is less than 7.8 degrees, Will meet the above benchmarks. • In the gray dimming cover using a semi-transmissive film having a phase difference distribution of not more than 7.8 degrees, the step difference of the photoresist pattern generated at the boundary portion between the light transmitting portion and the semi-transmissive portion is converted into transmittance, since More than 4. It can be said to be the ideal gray dimmer. Further, the present invention includes a method of manufacturing a gray dimmer substrate. A gray dimming cover substrate for manufacturing a gray ray and a squeezing hood to selectively reduce the amount of exposure light to the object to be transferred, the light ρ on the transferred body, and including the residual film Different value
2130-10017-PF 200928578 的部分，形成所要的轉印圖案。上述灰色調光罩基底，在 透明基板上具有半透光膜與遮光膜，經由施行既定的圖案 蝕刻，成為灰色調光罩，具有遮光部、以半透光膜透射一 部分曝光光的半透光部、以及沒有膜的透光部。本發明的 灰色調光罩基底的製造方法中，上述半透光膜的曝光光透 射率為X%’光罩圖案形成的區域内，上述半透光膜的曝光 光透射率分佈的容許範圍為¥%時，係與χ聯動的值，而決 ❿定上述半透光膜的膜質，使半透光部與透光部的邊界中產 生的曝光光的相位反轉為起因的透射率變動值，在丫％以 内。 即，半透光膜的設計中，極力縮小上述半透光膜的膜 厚、組成分佈，抑制透射率分佈在以下的同時必須加 重上述半透光膜所產生在透光部與半透光部的邊界中的 相位反轉影響。 此相位反轉的影響程度，由於根據要得到的半透光膜 ❿的透射率（例如，20%或60%)而大不同，最好根據模擬等預 先掌握。於是，最好決定半透光膜的膜質，使相位反轉產 生的透射率變動在Υ%以下。 在此，半透光膜的膜質的決定，例如半透光膜為M〇Six 時，係決定此組成比，滿足上述要件。例如，根據濺鍍法 形成膜時，根據濺鍍氣體（氬等）的流量，可以控制所要的 膜組成。 【圖式簡單說明】 2130-10017-PF 25 200928578 [圖]用以.兒明使用灰色調光罩的轉移型樣方法的 剖面圖。 [第2A 2F圖]顯不根據本發明的—實施例的灰色調光 罩的製造步驟剖面圖。 [第3A 3F圖]顯不根據本發明的二實施例的灰色調光 罩的製造步驟剖面圖。 [第4圖]顯不半透光部中使用微細圖案的製造用 ❹ 的灰色調光罩的一範例圖。 [第5圖]對於微細圖案的線寬變動，顯示對應第4圖 的位置中的透射率變動圖。 [第6圖]對於微細圖案的線寬變動，顯示透射率變化 圖。 [第7Α、7Β及7C圖]關於分別具有透射率為2〇%、4〇%、 的半透光邛的各灰色調光罩，對於半透光膜的相位 差顯不每位置的透射光量變動的相關關係圖。 ❹ [第7D圖]係用以顯示第7Α、7Β及7C圖的橫轴與灰 色凋光罩的各部之間的關係的灰色調光罩的部分剖面圖。 [第8A、8B及8C圖]係分別在第7Α、7β及7C圖中， 對於相位差’半透光部與透光部的邊界部分的透射光量的 極大值與極小值的差的關係圖。 [第9A、9B及9C圖]係分別在第7A、7B及7C圖中， 半透光部與透光部的邊界部分，相位差變動引起的透射光 量變動的關係圖。The part of 2130-10017-PF 200928578 forms the desired transfer pattern. The gray dimmer cover substrate has a semi-transparent film and a light-shielding film on the transparent substrate, and is etched by a predetermined pattern to form a gray dimming cover, and has a light-shielding portion and a semi-transparent light that transmits a part of the exposure light by the semi-transparent film. a portion, and a light transmitting portion without a film. In the method for producing a gray dimmer cover according to the present invention, the exposure light transmittance of the semi-transmissive film is X%' in a region where the mask pattern is formed, and the allowable range of the exposure light transmittance distribution of the semi-transmissive film is When ¥% is used, the value of the semi-transmissive film is determined by the value of the linkage with the crucible, and the phase of the exposure light generated in the boundary between the semi-transmissive portion and the translucent portion is reversed to the transmittance variation value of the cause. Within 丫%. That is, in the design of the semi-transmissive film, the film thickness and composition distribution of the semi-transmissive film are minimized, and the transmittance distribution is suppressed as follows, and the semi-transmissive film is required to be generated in the light transmitting portion and the semi-transmissive portion. The phase reversal effect in the boundary. The degree of influence of this phase inversion is largely different depending on the transmittance (e.g., 20% or 60%) of the semi-transmissive film to be obtained, and it is preferable to grasp it in advance based on simulation or the like. Therefore, it is preferable to determine the film quality of the semi-transmissive film so that the transmittance of the phase inversion is fluctuated by less than Υ%. Here, the determination of the film quality of the semi-transmissive film, for example, when the semi-transmissive film is M〇Six, determines the composition ratio and satisfies the above requirements. For example, when a film is formed by a sputtering method, the desired film composition can be controlled in accordance with the flow rate of a sputtering gas (argon or the like). [Simple description of the diagram] 2130-10017-PF 25 200928578 [Picture] A sectional view of the transfer pattern method using the gray dimmer. [Fig. 2A 2F] A cross-sectional view showing a manufacturing step of a gray dimming cover according to the embodiment of the present invention. [Fig. 3A 3F] A cross-sectional view showing a manufacturing step of a gray dimming cover according to a second embodiment of the present invention. [Fig. 4] An exemplary view of a gray dimming cover for manufacturing a fine pattern in a semi-transmissive portion. [Fig. 5] A transmittance variation diagram at a position corresponding to Fig. 4 is displayed for the line width variation of the fine pattern. [Fig. 6] A graph showing changes in transmittance for the line width variation of the fine pattern. [Fig. 7, Β, and 7C] For each of the gray dimming hoods having semi-transparent 邛 having a transmittance of 2〇% and 4〇%, the phase difference of the semi-transmissive film is not the amount of transmitted light per position. A related diagram of the change. ❹ [Fig. 7D] is a partial cross-sectional view of the gray dimming cover for showing the relationship between the horizontal axis of the seventh, seventh, and seventh graphs and the respective portions of the gray varnish. [8A, 8B, and 8C] FIG. 8A, 7B, and 7C are diagrams showing the relationship between the maximum value and the minimum value of the transmitted light amount at the boundary portion between the semi-transmissive portion and the light-transmitting portion in the seventh, seventh, and seventh graphs. . [Fig. 9A, 9B, and 9C] are diagrams showing the relationship between the variation in the transmitted light amount due to the phase difference fluctuation at the boundary portion between the semi-transmissive portion and the light-transmitting portion in Figs. 7A, 7B, and 7C, respectively.
2130-1〇〇17-PF 26 200928578 【主要元件符號說明】 20〜 灰色調光 罩； 21〜 遮光部； 22〜 透光部； 23〜 半透光部 > 24〜 透明基板 25〜 遮光膜； 26〜 半透光膜 27〜 光阻膜； 28〜 光阻圖案 9 30〜 被轉印體 9 31〜 基板； 32A ' 、32B〜膜 > 33〜 光阻圖案 0 2Ί2130-1〇〇17-PF 26 200928578 [Description of main component symbols] 20~ Gray dimmer cover; 21~ shading part; 22~ transmissive part; 23~ semi-transmissive part> 24~ transparent substrate 25~ shading film 26~ semi-transparent film 27~ photoresist film; 28~ photoresist pattern 9 30~ transfer body 9 31~ substrate; 32A ', 32B~ film> 33~ photoresist pattern 0 2Ί
2130-10017-PF2130-10017-PF
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007256928A JP2009086382A (en) | 2007-09-29 | 2007-09-29 | Gray tone mask blank and method for manufacturing the same, method for manufacturing gray tone mask and gray tone mask, and pattern transfer method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200928578A true TW200928578A (en) | 2009-07-01 |
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ID=40517247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097136635A TW200928578A (en) | 2007-09-29 | 2008-09-24 | Gray tone mask blank and method of manufacturing the same, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2009086382A (en) |
| KR (1) | KR20090033317A (en) |
| CN (1) | CN101398611A (en) |
| TW (1) | TW200928578A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI396934B (en) * | 2008-08-11 | 2013-05-21 | Hoya Corp | Multi-tone photomask, pattern transfer method and method of producing a display device using the multi-tone photomask |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5151344B2 (en) * | 2007-09-19 | 2013-02-27 | 大日本印刷株式会社 | Manufacturing method of color filter |
| JP5160286B2 (en) * | 2008-04-15 | 2013-03-13 | Ｈｏｙａ株式会社 | Multi-tone photomask, pattern transfer method, and thin film transistor manufacturing method |
| KR101384111B1 (en) * | 2009-01-09 | 2014-04-10 | 주식회사 에스앤에스텍 | A Blank Mask, A Photomask using the Same and Method of Fabricating the Same |
| KR20110059510A (en) * | 2009-11-27 | 2011-06-02 | 주식회사 에스앤에스텍 | Blankmask, photomask and manufacturing method of the same |
| TWI461833B (en) * | 2010-03-15 | 2014-11-21 | Hoya Corp | Multi-tone photomask, method of manufacturing a multi-tone photomask, and pattern transfer method |
| US8298729B2 (en) * | 2010-03-18 | 2012-10-30 | Micron Technology, Inc. | Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks |
| JP5917020B2 (en) * | 2010-06-29 | 2016-05-11 | Hoya株式会社 | Manufacturing method of mask blank and multi-tone mask |
| JP5163967B2 (en) * | 2010-07-30 | 2013-03-13 | オムロン株式会社 | Photomask correction method and laser processing apparatus |
| US8381139B2 (en) * | 2010-11-30 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for metal correlated via split for double patterning |
| TWI456340B (en) * | 2011-09-13 | 2014-10-11 | Univ Nat Taiwan | A wave-shaped mask, the method for fabricating the wave-shaped mask and the exposure method for fabricating a tunable nano-scaled structure via the wave-shape mask |
| JP6077217B2 (en) * | 2012-03-27 | 2017-02-08 | Hoya株式会社 | Phase shift mask blank for manufacturing liquid crystal display device and method for manufacturing phase shift mask |
| JP6139826B2 (en) * | 2012-05-02 | 2017-05-31 | Hoya株式会社 | Photomask, pattern transfer method, and flat panel display manufacturing method |
| JP5538513B2 (en) * | 2012-12-12 | 2014-07-02 | Ｈｏｙａ株式会社 | Multi-tone photomask, pattern transfer method, and thin film transistor manufacturing method |
| CN104267580A (en) * | 2014-09-05 | 2015-01-07 | 京东方科技集团股份有限公司 | Mask plate, array substrate and preparation method thereof, and display device |
| JP6557638B2 (en) * | 2016-07-06 | 2019-08-07 | 株式会社エスケーエレクトロニクス | Halftone mask and halftone mask blanks |
| JP7166975B2 (en) * | 2019-03-29 | 2022-11-08 | Hoya株式会社 | Photomask blank, photomask manufacturing method, and display device manufacturing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0862826A (en) * | 1994-08-19 | 1996-03-08 | Toshiba Corp | Mask for exposure and its production and production of semiconductor device |
| US5914202A (en) * | 1996-06-10 | 1999-06-22 | Sharp Microeletronics Technology, Inc. | Method for forming a multi-level reticle |
| JP2000181048A (en) * | 1998-12-16 | 2000-06-30 | Sharp Corp | Photomask, its production and exposure method using the same |
| JP4961990B2 (en) * | 2005-12-14 | 2012-06-27 | 大日本印刷株式会社 | Mask blank and gradation mask |
-
2007
- 2007-09-29 JP JP2007256928A patent/JP2009086382A/en active Pending
-
2008
- 2008-09-24 TW TW097136635A patent/TW200928578A/en unknown
- 2008-09-26 KR KR1020080094421A patent/KR20090033317A/en not_active Application Discontinuation
- 2008-09-26 CN CNA2008101610875A patent/CN101398611A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI396934B (en) * | 2008-08-11 | 2013-05-21 | Hoya Corp | Multi-tone photomask, pattern transfer method and method of producing a display device using the multi-tone photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101398611A (en) | 2009-04-01 |
| JP2009086382A (en) | 2009-04-23 |
| KR20090033317A (en) | 2009-04-02 |
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