TW201107875A - Half tone mask and manufacturing method of the same - Google Patents

Half tone mask and manufacturing method of the same Download PDF

Info

Publication number
TW201107875A
TW201107875A TW099116366A TW99116366A TW201107875A TW 201107875 A TW201107875 A TW 201107875A TW 099116366 A TW099116366 A TW 099116366A TW 99116366 A TW99116366 A TW 99116366A TW 201107875 A TW201107875 A TW 201107875A
Authority
TW
Taiwan
Prior art keywords
semi
penetrating
substrate
transparent
region
Prior art date
Application number
TW099116366A
Other languages
Chinese (zh)
Other versions
TWI434133B (en
Inventor
Moo-Sung Kim
Original Assignee
Lg Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co Ltd filed Critical Lg Innotek Co Ltd
Publication of TW201107875A publication Critical patent/TW201107875A/en
Application granted granted Critical
Publication of TWI434133B publication Critical patent/TWI434133B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention relates to a half tone mask and a manufacturing method of the same configured to reduce the number of processes of manufacturing the half tone mask having multiple half permeation units, thereby reducing the time and manufacturing costs, wherein the half tone mask comprises: a substrate; a half permeation area formed on the substrate for transmitting irradiated light of a predetermined wavelength range; and a half permeation area having multiple half permeation units having two or more mutually different transmittances to a predetermined wavelength range of light irradiated on the substrate using two or more half permeation materials.

Description

201107875 六、發明說明·· 【發明所屬之技術領域】 本發明主張關於2009年5月21日所申請的南韓專利 案號10-2009-0044351的優先權，並在此以引用的方式併 入本文中，以作為參考。 本發明是有關於一種半調式光罩及其製造方法，以減 少製程次數的半調式光罩製造方法，因而能減少製造時間 與成本，其中此半調式光罩具有多重半穿透單元。 【先前技術】 一般而言’液晶顯示器（Liquid Crystal Display，LCD ) 是利用電場來控制具有介電各向導性（dielectric anisotropy)的液晶之光穿透率（Hght transmittance)，從而 顯示影像。為此，液晶顯示器包括一液晶顯示面板（liquid crystal display panel)’ 其利用液晶晶胞（liquid crystal cdl) 矩陣以及驅動電路（driving Circuit)驅動液晶顯示面板來 顯示影像。習知技術的液晶顯示面板包括一彩色濾光基板 (color filter substrate)以及一薄膜電晶體基板（thinfilm transistor substrate )，其中彩色濾光基板與薄膜電晶體基板 彼此結合，而二者之間存有液晶（liquid crystal)。 彩色濾光基板包括依序配置在上玻璃基板（upperglass 201107875 substrate )上的一黑矩陣（black matrix )、一彩色濾光片 (color filter)以及共用電極（common electrode)。 薄膜電晶體基板包括一薄膜電晶體（thin film transistor )以及為晶胞準備的一晝素電極（pixel electrode)，其而每個晶胞係藉由下玻璃基板上交錯的閘極 線（gate line)與資料線（data line)所來定義出每個晶胞。 薄膜電晶體使用從資料線傳輸至晝素電極的資料訊號 (data signal )，其與來自閘極線的閘極訊號（gate signal) 響應。由透明導電層所形成的晝素電極提供來自薄膜電晶 體的貧料訊號以驅動液晶。 薄膜電晶體基板是經由多道光罩製程而形成，其中形 成源極電極（source electrode )、沒極電極（drain electrode ) 以及半導體圖案的製程會使用單一個半調式光罩來減少光 罩製程的次數。 【發明内容】 【技術問趨】 此時，半調式光罩包括遮擋紫外光的一遮光區、紫外 光能部分穿透的一半穿透區、以及傳送該紫外光的一穿透 區。 半調式光罩的半穿透區可以是由各自具有不同穿透$ 的多重半穿透單元所形成。此時，使用多個半穿逯材料各 201107875 自具有不同穿透率，以形成多重半穿透單元。 換句話說，為了在半穿透區上形成各自具有不同穿透 率的半穿透單元，各自具有不同穿透率的多個半穿透材料 被使用於多重半穿透區。 一種具有三種或更多彼此不同的半穿透單元之半調式 光罩的製造方法，可以透過堆疊經由微影製程 (photolithography process )與I虫刻製程而圖案化的一第一 半穿透材料，且一第二半穿透材料堆疊於其上，並經由微 影製程與蝕刻製程來圖案化第二半穿透材料，另外將一第 三半穿透材料堆疊於其上，而第三半穿透材料經由微影製 程與蝕刻製程而被圖案化，以形成具有三種彼此不同之穿 透率的一半穿透區。 如上所述，習知製造方法遭遇到缺點：各個彼此不同 的半穿透材料藉由微影製程與蝕刻製程而堆疊及圖案化， 以形成多重半穿透單元，導致增加製程的次數，進而增加 時間與成本。 【技術手段】 為了消除上述缺點，在此揭露本發明，而本發明的優 點在於提供一種半調式光罩及其製造方法，以減少具有多 重半穿透單元之半調式光罩的製造流程次數，從而減少時 間及製造成本。 本發明提出一種半調式光罩，其包括一基板、一形成 在基板上並用以傳送一預定波長範圍的照射光之穿透區、 201107875 以及具有多重半穿透單元的一半穿透區，其中對照射在基 板上的預定波長範圍的光線而言，利用二種或更多半穿透 材料，多重半穿透單元得以具有二種或更多彼此不同的穿 透率。 在一些實施例中，半調式光罩可以更包括一遮光區， 其具有形成在至少二種或更多半穿透材料之一上表面或一 下表面上的一阻擔層。 在一些實施例中，半穿透材料可以包括一主要元素為 Cr、Si、Mo、Ta、Ti、A卜 Zr、Sn、Zn、In、Mg、Hf、V、 Nd、Ge、Mg0-Al203或Si3N4其中之一的單一主要元素材 料，或混合至少二種或更多元素的一結合材料，或包括添 加Cox、Ox、Nx、Cx、Fx以及Bx至少其中之一至該單一主 要元素材料或該結合材料之一材料，其中字尾（suffix) X 為一自然數並且定義各個化學元素的原子數目。 在一些實施例中，至少二種半穿透材料各自具有不同 的姓刻率。 本發明另提出一種半調式光罩的製造方法，其包括以 下步驟。形成一阻擋層在形成有一遮光區的一基板上；形 成一半穿透區在形成有阻擋層的基板上，而利用至少二種 半穿透材料，使半穿透區具有三種或更多彼此不同的穿透 率；以及形成堆疊阻擋層與至少二半穿透材料的一遮光區 和基板所裸露之處的一穿透區。 在一些實施例中，在利用至少二種半穿透材料，以具 201107875 有三種或更多彼此不同的穿透率之形成有阻擋層的基板 上，形成半穿透區的步驟包括：在基板上依序堆疊一第一 半穿透材料以及一光阻，並曝光及顯影光阻，以使一必需 區域被暴露於第一半穿透材料，以移除裸露的第一半穿透 材料；在形成有第一半穿透材料的基板上依序堆疊一第二 半穿透材料以及另一光阻，並曝光及顯影光阻，以使另一 必需區域被暴露於第二半穿透材料，以移除裸露的第二半 穿透材料，以及在基板上形成由弟·一半穿透材料所形成的 一第一半穿透單元、由第二半穿透材料所形成的一第二半 穿透單元、以及由第一與第二半穿透材料堆疊所形成的一 第三半穿透單元。 在一些實施例中，至少二種半穿透材料各自具有不同 的钱刻率。 在一些實施例中，半穿透材料包括一主要元素為〇1·、 Si、Mo、Ta或A1的單一主要元素材料，或混合至少二種 或更多元素的一結合材料，或添加Cox、Ox、队至少其中 之一至該單一主要元素材料或該結合材料的一材料。 本發明另提出一種半調式光罩的製造方法，其包括以 下步驟。形成一半穿透區在一基板，利用至少二種半穿透 材料使該半穿透區具有一多重半穿透單元，其具有三種或 更多彼此不同的穿透率；在多重半穿透單元上依序堆疊一 阻擋層與一光阻，並曝光及顯影光阻，以使一必需區域被 暴露於阻擋層，以移除裸露的光阻；以及在至少二半穿透 201107875 材料上形成由阻擋層所形成的一遮光區，以 裸露之處的一穿透區。 形成基板所 在-些實施例中，形成一半穿透區在 少二種半穿透材料使半穿透區具有一多重半;:利用至 具有三種或更多彼此不同的穿透率的步括透=，其 依序堆疊一第—半穿透材料以及一先祖，並曝先=板上 阻，以使一必需區域被暴露於第一半 及〜光 露的第-半穿透材料’·在形成有第一半穿除裸 :侧-第二半穿透材料以及另一光阻透=板上 =阻’以使另1、需區域被暴露於第二及顯影 透材料所形成的板上形^第—半穿 形成的-第二半穿透穿透平70、由第二半穿透材料所 堆疊所形成的一第三：：、、：及由第-與第二半穿透材料 千穿透早7〇。 在一些實施例中， 的蝕刻率。 至〉、二種半穿透材料各自具有不同 些實施例中’半穿透。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In, for reference. SUMMARY OF THE INVENTION The present invention is directed to a halftone reticle and a method of fabricating the same that reduces manufacturing time and cost by reducing the manufacturing time and cost. The halftone reticle has multiple transflective units. [Prior Art] In general, a liquid crystal display (LCD) uses an electric field to control a light transmittance of a dielectric having a dielectric anisotropy to display an image. To this end, the liquid crystal display includes a liquid crystal display panel which drives a liquid crystal display panel to display an image using a liquid crystal cdl matrix and a driving circuit. The liquid crystal display panel of the prior art includes a color filter substrate and a thin film transistor substrate, wherein the color filter substrate and the thin film transistor substrate are combined with each other. Liquid crystal. The color filter substrate includes a black matrix, a color filter, and a common electrode which are sequentially disposed on the upper glass substrate (upperglass 201107875 substrate). The thin film transistor substrate includes a thin film transistor and a pixel electrode prepared for the unit cell, wherein each cell line is interconnected by a gate line on the lower glass substrate (gate line) ) Each cell is defined with a data line. The thin film transistor uses a data signal that is transmitted from the data line to the pixel electrode, which responds to the gate signal from the gate line. The halogen electrode formed of the transparent conductive layer provides a lean signal from the thin film transistor to drive the liquid crystal. The thin film transistor substrate is formed by a multi-pass mask process, wherein a process of forming a source electrode, a drain electrode, and a semiconductor pattern uses a single half-tone mask to reduce the number of mask processes. . SUMMARY OF THE INVENTION At this time, the halftone mask includes a light shielding region that blocks ultraviolet light, a half penetration region through which ultraviolet light energy partially penetrates, and a transmission region that transmits the ultraviolet light. The semi-transmissive zone of the halftone reticle can be formed by multiple semi-transparent cells each having a different penetration $. At this time, multiple semi-piercing materials are used, each having a different transmittance to form multiple semi-transparent units. In other words, in order to form semi-transparent cells each having a different transmittance on the semi-transmissive region, a plurality of semi-penetrating materials each having a different transmittance are used in the multiple semi-transmissive regions. A method for manufacturing a halftone reticle having three or more semi-transparent units different from each other, which can be stacked by stacking a first semi-transparent material patterned by a photolithography process and a lithography process. And a second semi-through material is stacked thereon, and the second semi-transparent material is patterned through a lithography process and an etching process, and a third semi-penetrating material is stacked thereon, and the third half is worn. The permeable material is patterned via a lithography process and an etch process to form a half-transmissive region having three different transmittances from each other. As described above, conventional manufacturing methods suffer from the disadvantage that each of the different semi-transparent materials is stacked and patterned by a lithography process and an etching process to form multiple semi-transparent units, resulting in an increase in the number of processes and thus an increase. Time and cost. [Technical Means] The present invention has been disclosed in order to eliminate the above disadvantages, and an advantage of the present invention is to provide a half-tone mask and a method of manufacturing the same, to reduce the number of manufacturing processes of a half-tone mask having multiple semi-transparent units. Thereby reducing time and manufacturing costs. The present invention provides a half-tone mask comprising a substrate, a penetration region formed on the substrate for transmitting illumination light of a predetermined wavelength range, 201107875, and a half penetration region having multiple semi-transparent units, wherein With respect to light of a predetermined wavelength range irradiated on the substrate, the multiple semi-transparent unit can have two or more different transmittances from each other using two or more semi-penetrating materials. In some embodiments, the halftone reticle may further comprise a opaque region having a resistive layer formed on an upper surface or a lower surface of at least two or more semi-permeable materials. In some embodiments, the semi-permeable material may comprise a major element of Cr, Si, Mo, Ta, Ti, A, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al203 or a single main element material of one of Si3N4, or a combination material of at least two or more elements, or including at least one of adding Cox, Ox, Nx, Cx, Fx, and Bx to the single main element material or the combination A material of a material in which suffix X is a natural number and defines the number of atoms of each chemical element. In some embodiments, at least two of the semi-permeable materials each have a different surname. The present invention further provides a method of fabricating a half-tone mask comprising the following steps. Forming a barrier layer on a substrate on which a light-shielding region is formed; forming a half-transmissive region on the substrate on which the barrier layer is formed, and using at least two semi-through materials to make the semi-transparent region have three or more different from each other The penetration rate; and a penetrating region forming a stacked barrier layer and at least two light-shielding regions of the material and the exposed portion of the substrate. In some embodiments, the step of forming a semi-transmissive region on the substrate having the barrier layer formed by using at least two semi-transmissive materials having three or more different transmittances from 201107875 includes: Stacking a first semi-transmissive material and a photoresist sequentially, and exposing and developing the photoresist such that a necessary area is exposed to the first semi-transparent material to remove the exposed first semi-penetrating material; Forming a second semi-transparent material and another photoresist sequentially on the substrate on which the first semi-transmissive material is formed, and exposing and developing the photoresist to expose another necessary region to the second semi-transparent material To remove the exposed second semi-penetrating material, and form a first semi-transparent unit formed by the half-penetrating material on the substrate, and a second half formed by the second semi-penetrating material. a penetrating unit, and a third semi-transparent unit formed by stacking the first and second semi-transmissive materials. In some embodiments, at least two of the semi-permeable materials each have a different rate of money. In some embodiments, the semi-permeable material comprises a single primary elemental material having a major element of 〇1·, Si, Mo, Ta or A1, or a combination of at least two or more elements, or Cox, Ox, at least one of the team to the single primary element material or a material of the bonding material. The present invention further provides a method of fabricating a half-tone mask comprising the following steps. Forming a semi-transparent zone on a substrate, using at least two semi-permeable materials such that the semi-transmissive zone has a plurality of semi-transparent cells having three or more different transmittances from each other; Stacking a barrier layer and a photoresist in sequence, and exposing and developing the photoresist such that a necessary area is exposed to the barrier layer to remove the bare photoresist; and forming at least two of the penetration of the 201107875 material A light-shielding area formed by the barrier layer is a penetration area of the exposed portion. Forming the substrate - in some embodiments, forming a semi-transmissive region in the two less transmissive materials to have a multiple half of the semi-transmissive region;: utilizing steps having three or more different transmittances from each other Transparency =, which sequentially stacks a first-semi-penetrating material and a ancestor, and exposes the first plate resistance so that a necessary area is exposed to the first half and the first semi-penetrating material of the light dew. a plate formed by forming a first half through bare: a side-second semi-through material and another light blocking plate = a resistance such that the other region is exposed to the second and the developed material a third formed by the upper-first half-through-the second half-penetrating flat 70, formed by the stacking of the second semi-penetrating material: :, , : and penetrated by the first and second half The material penetrates 7 times early. In some embodiments, the etch rate. To >, the two semi-penetrating materials each have a different half-penetration in the embodiments

Sl、Mo、Ta、或A1的單_以_ 要素為Cr、 或更多元素的—έ士人好 疋素材料，或混合至少二種 之一至該單一主枓，或添加以，、（\、队至少其中 几素材料或該結合材料的一材料。 【有利的功效】 本發明有利於 種半調式光罩，其包括具有多 重半穿 201107875 透單元的一半穿透區，1中条丨m 八中和用至少二半穿透材料，使多 重半穿透單元得以具有彼此兀内从咖 ，嵌此不冋的穿透率，而一遮光區形 成在至少二半穿透材料的一上矣 寸扪上表面或一下表面上，而此半 調式光罩基於h —種半穿透材料的不同制率，從而能 選擇性地㈣半穿透材料，進能簡化製程，以減少步驟次 數。 【實施方式】 本發明的實施例將配合圖i至圖20來進行詳細的說 明。 圖1是本發明第一實施例之半調式光罩的剖面示意 圖。 凊參閱圖1，一半調式光罩1〇〇包括位在一基板1〇2 上的一遮光區（blocking area) S1、具有多重半穿透單元的 半穿透區S2、S3、S4以及一穿透區（transmjssive area) S5。 基板102可以是一透明基板，例如石英（qUartz )，能 元全傳送預定波長範圍的照射光（irradiated light)。不過， 基板102並不限定是石英，任何能傳送光線的材料都可適 用。 半穿透區S2、S3、S4可包含多重半穿透單元，以傳送 照射在基板上預定波長範圍内之光線在彼此不同之穿透率 (transmittance)。半穿透區S2、S3、S4可以透過多個光阻 圖案（photo-resist pattern )來形成，而在經過顯影製程 201107875 (development process )後，藉由在光阻製程的曝光製程 (exposing process )中紫外光（ultraviolet )的部分穿透， 各個光阻圖案具有不同的厚度。 更具體來說，半穿透區S2、S3、S4可以包含多重半穿 透單元，其利用至少二個或更多半穿透材料而具有三個或 更多彼此不同的穿透率。此時，若半穿透區S2、S3、S4 是由半穿透材料，例如第一及第二半穿透材料112、114，' 來形成的話，則可形成各自具有不同穿透率的三個半穿透 區。 換句話說，半穿透區S2、S3、S4可包括由第一半穿透 材料112形成在基板上並允許光線穿透率達X%的第一半 穿透單元S3、由第二半穿透材料114所形成並允許光線穿 透率達Y%的第二半穿透單元S4、以及由第一及第二半穿 透材料112、114堆疊而成並允許光線穿透率達Z%的第三 半穿透單元S2，其中各個X%、Y%與Z%定義一能讓10 至90%的照射光穿透的光穿透率。 此時，第一及第二半穿透材料112、114可以是一種具 有主要元素為Cr、Si、Mo、Ta、Ti或A1的單一主要元素 材料或結合至少二種或更多元素的一結合材料，或者也可 以是一種添加有Cox、Ox、Nx其中一種至該單一主要元素 材料或該結合材料的一材料，其中X為對應元素組合而改 變的自然數。 第一及第二半穿透材料112、114的組成可有不同變 11 201107875 化，只 一此约傳遞預定波長範圍内的部分照射光。在本 發明中，第一及楚_ $〜半穿透材料112、114的組成可以選自 於由Crx〇、Cr 、CrxOyNz、SixOy、SixOyNz、SixCOy、Sl, Mo, Ta, or A1 _ element with Cr, or more elements - gentleman good material, or mix at least two of one to the single main 枓, or add with, (\ At least one of the materials of the team or a material of the bonding material. [Advantageous Effect] The present invention is advantageous for a half-tone type mask, which comprises a half-transparent area with multiple semi-transparent 201107875 through-cells, 1 middle 丨m Eight and a half penetrate the material with at least two halves, so that the multiple semi-transparent units can have the same penetration rate, and a light-shielding area is formed on at least one of the at least two semi-penetrating materials. In the upper surface or the lower surface of the inch, the half-tone mask is based on the different ratios of the semi-transparent materials, so that the material can be selectively transposed (semi-transparent), and the process can be simplified to reduce the number of steps. Embodiments of the present invention will be described in detail with reference to Figures 1 to 20. Figure 1 is a cross-sectional view of a halftone mask of a first embodiment of the present invention. 凊 Referring to Figure 1, a half-tone mask 1〇 〇 includes a mask on a substrate 1〇2 A blocking area S1, a semi-transmissive area S2, S3, S4 having a plurality of semi-transmissive units, and a transmjssive area S5. The substrate 102 may be a transparent substrate, such as quartz (qUartz), energy element All of the irradiated light of a predetermined wavelength range is transmitted. However, the substrate 102 is not limited to quartz, and any material capable of transmitting light can be applied. The semi-transmissive regions S2, S3, and S4 may include multiple semi-transparent units. Transmitting light rays that are irradiated on a substrate in a predetermined wavelength range at different transmittances. The semi-transmissive regions S2, S3, and S4 may be formed by a plurality of photo-resist patterns, and After the development process 201107875 (development process), each photoresist pattern has a different thickness by partial penetration of ultraviolet light in the exposing process of the photoresist process. More specifically, the half-through The through regions S2, S3, S4 may comprise multiple semi-transparent units that utilize at least two or more semi-permeable materials to have three or more different transmittances from each other. The penetrating zones S2, S3, S4 are formed by semi-transmissive materials, such as first and second semi-permeable materials 112, 114, ', to form three semi-transparent zones each having a different transmittance. In other words, the semi-transmissive regions S2, S3, S4 may include a first semi-transparent unit S3 formed by the first semi-transparent material 112 on the substrate and allowing a light transmittance of X%, by the second half a second semi-transparent unit S4 formed by the penetrating material 114 and allowing a light transmittance of Y%, and a stack of the first and second semi-penetrating materials 112, 114 and allowing a light transmittance of Z% The third half penetrates the unit S2, wherein each of X%, Y%, and Z% defines a light transmittance that allows 10 to 90% of the illumination light to penetrate. At this time, the first and second semi-penetrating materials 112, 114 may be a single main element material having a main element of Cr, Si, Mo, Ta, Ti or A1 or a combination of at least two or more elements. The material, or a material to which one of Cox, Ox, Nx is added to the single main element material or the bonding material, wherein X is a natural number that changes depending on the combination of elements. The composition of the first and second semi-permeable materials 112, 114 may vary, and only a portion of the illumination light within a predetermined wavelength range is transmitted. In the present invention, the composition of the first and second semi-penetrating materials 112, 114 may be selected from Crx, Cr, CrxOyNz, SixOy, SixOyNz, SixCOy,

SixCOyNz、Mo Si y y x y、MoxOy、M〇x〇 Nz、MoxCOy、MoxOyNz、 MoxSiy〇z > M〇xSi n XT A/r y〇zN、MoxSiyc〇zN、MoxSiyCOz、TaxOy、SixCOyNz, Mo Si y y x y, MoxOy, M〇x〇 Nz, MoxCOy, MoxOyNz, MoxSiy〇z > M〇xSi n XT A/r y〇zN, MoxSiyc〇zN, MoxSiyCOz, TaxOy,

TaxOyNz ^ C〇 X y、Tax〇yNz、AlxOy、AlxCOy、AlxOyNz、TaxOyNz ^ C〇 X y, Tax〇yNz, AlxOy, AlxCOy, AlxOyNz,

AlxCOyNz、Tix〇、T. 曰 y hOyNz'TixCOy或其結合所構成的族群。 最好地，.若给 第一半穿透材料112是由CrxOy、CrxCOy Χ 所开^成時，第二半穿透材料114可被使用除上 述所列的半穿诱 何料之外其可選擇性地與Cr蝕刻的材 料。也就是說，塗 年一半穿透材料112必須是上述所列的半 材料中由各自具有不同蝕刻率（etchingrati〇)的半穿 透材料所形成。 同時，如圖]仏_ Μ 1所不穿透區可以包括各自具有不同 穿透率的第一、當_ 弟二以及第三半穿透單元，且也可以包括 使用夕重半牙透材料的第-至第η半穿透單元。 一 / .’、'員〜衣羲後，藉由在顯影期間對紫外光的阻擋，遮 光區^會留下光阻圖案。為此，遮光區si在基板ι〇2上 忙序隹且阻擔層（bl〇ckinglayer)11〇、第一半穿透材料⑴ 以及第二半穿透材料m，以_紫外光。 現在’請參閱圖卜其圖示說明本發明第一實施例之 t調式光罩⑽’遮光區S1可以在基板搬上依序形成阻 心运110帛半牙透材料112以及第二半穿透材料114。 12 201107875 更確切地說，遮光區si可以是由形成在第一及第二半穿透 材料112、114底下，作為底部結構（bottom structure)的 阻擋層110來形成’或者可由形成在第一及第二半穿透材 料112、114上’作為頂部結構（top structure )的阻擔展 110來形成。 現在，形成包括穿透區S5、遮光區S1與第一及第二 半穿透材料112、114的半調式光罩之製程將配合圖2至 來進行說明。 請參閱圖2 ’利用濺鑛（sputtering )、化學氣;j：目沉積 (chemical vapor deposition)以及其類似的方法，阻擒層 110與光阻12p依序堆疊在基板1〇2上。阻擋層11()可以是 由能遮擋紫外光的材料所形成，例如阻擋層11〇可由G與 CrxOy所形成的膜層來形成。 、 現在，請參閱圖3，在應形成穿透區S5與第一及第_ 半穿透材料U2、114之處繪製（drawn)及顯影光阻12〇 所以阻擔層110被裸露出來。更具體來說，在應形成穿专 區S5與第一及第二半穿透材料、114之處的光阻會 田射光束所&射、繪製’而繪製後的光阻會被顯影以及矛 除0 : 擔層 及第 光阻12〇殘留在位於遮光區S1應形成之處的随 上，而阻擋層110裸露在應形成穿透區S5鱼第 二半穿透材料m、114之處。 冰 見在°月參閱目4 ’利用殘留在基板102上的光随12〇 13 201107875 來作為遮罩’並藉由钮刻製程（etching process)來移除裸 露的阻擋層110。在基板1〇2上的阻擋層11〇只殘留在遮光 區S1應該會形成的地方’而基板102被裸露於應形成穿透 區S5與半穿透區；§2、S3、S4之處。 睛參閱圖5’藉由濺鍍、化學氣相沉積以及其類似的 方法第一半穿透材料112與光阻120依序堆疊在具有阻 擋層110的基板102上。更具體來說，第一半穿透材料m 最好疋—種具有主要元素為Cr、Si、Mo、Ta、Ti、A1其中 之一的單一主要元素材料或結合至少二種或更多元素的 合材料:或者也可以是—種添加有ΜΑ'之= 中：種至該單一主要元素材料或該結合材料的一材料’： 中字尾X為對應元素組合而改變的自然數。 、 能 第一半穿透材料112的組成可有不同變化，只 夠傳遞預定波長範圍内的部分照射光。在本發明中， :=材：112的組成可以選自於由叫、： M〇xSly0 N . LJ s· C〇M〇XC〇y ' M〇X〇yNZ ' M〇XSiy〇Z ' /、y Tax〇yNzilx〇y、AlxC〇y、Aix〇yNz AixC〇A、 y lxQyNz'TlxC〇y或其結合所構成的族群中的复由 何一者，JL中车足 -、T任 子數目。第一半為自然數並定義各個元素的眉 弟+牙透材料112最好是由Crx〇y、c CrxOyNz所形成。 xC〇y或 14 201107875 現在，請參閱圖6,形成在 被雷射光束所照射及綠製，並心、半穿透#料ιΐ2上的 讓第一半穿透材料112裸露在應=影被綠製的光阻12〇, 透單元S4之處。 、乂戍穿透區SS與第二半穿 請參閱圖7,利用殘留在第… 阻120來作為遮罩，並藉由餘刻:半。穿透材料112上的光 穿透材料112。因此，阻擋層a、裎來移除裸露的第一半 堆疊於應形成遮光區S1之严與第一半穿透材料112 基板102上’並位在應形成：第:第半=:12形成在 之處。 々弟一千穿透早几S2、S3 類似的方法’第::穿8透:用機鍍、化學氣相沉積以及其 具有第：透材依序堆疊在 要元素為〇*、81、:。—:牙透材料114最好是-種具有主 素材料或結合至少-種二^其中之-的單-主要元 也可以是-種添加二或更結合材料 - χ 〇χ、Νχ其中-種至該單一主要 =材料或該結合材料的„_，其中字尾χ 組合而改變的自然數。 巧了應几素 第二半穿透材料114的 傳遞預定波長範圍内的部分照射光。在本發明中，、= 穿透材料m的組成可以選自於由A group of AlxCOyNz, Tix〇, T. 曰 y hOyNz'TixCOy or a combination thereof. Preferably, if the first semi-permeable material 112 is opened by CrxOy, CrxCOy®, the second semi-permeable material 114 can be used in addition to the semi-peeling materials listed above. A material that is selectively etched with Cr. That is, the coated half-through material 112 must be formed of a semi-permeable material having a different etching rate in each of the above-listed half materials. Meanwhile, the non-penetration zone of the figure 仏_Μ 1 may include the first, the second and the third semi-transparent units each having a different transmittance, and may also include the use of the semi-transparent material. The first to the nth semi-penetrating unit. After a member's clothing, the light blocking pattern will leave a photoresist pattern by blocking the ultraviolet light during development. To this end, the light-shielding region si is on the substrate 〇2, and the resist layer (bl〇cking layer), the first semi-transmissive material (1) and the second semi-transmissive material m are _ ultraviolet light. Now, please refer to FIG. 2 to illustrate the t-type mask (10) of the first embodiment of the present invention. The light-shielding region S1 can sequentially form a resistive core 110 and a second semi-transparent material on the substrate. Material 114. 12 201107875 More specifically, the light-shielding region si may be formed by the barrier layer 110 formed under the first and second semi-transmissive materials 112, 114 as a bottom structure' or may be formed in the first The second semi-permeable material 112, 114 is formed as a resistive structure 110 of the top structure. Now, the process of forming a half-tone mask including the penetration region S5, the light-shielding region S1, and the first and second semi-transmissive materials 112, 114 will be described with reference to Figs. Referring to Fig. 2', by sputtering, chemical gas, j: chemical vapor deposition, and the like, the barrier layer 110 and the photoresist 12p are sequentially stacked on the substrate 1〇2. The barrier layer 11 () may be formed of a material that blocks ultraviolet light, for example, the barrier layer 11 may be formed of a film layer formed of G and CrxOy. Now, referring to FIG. 3, the photoresist 12 is drawn and developed at a position where the penetration region S5 and the first and the _th semi-penetrating materials U2, 114 are to be formed, so that the resist layer 110 is exposed. More specifically, in the case where the wearing area S5 and the first and second semi-transmissive materials, 114 should be formed, the photoresist will be developed and the spear will be developed. Except for 0: the layer and the photoresist 12 remain in the place where the light-shielding region S1 should be formed, and the barrier layer 110 is exposed at the place where the second half-penetrating material m, 114 of the penetrating region S5 should be formed. The ice is seen in the month of the month. The light remaining on the substrate 102 is used as a mask with 12 〇 13 201107875 and the exposed barrier layer 110 is removed by an etching process. The barrier layer 11 on the substrate 1〇2 remains only where the light-shielding region S1 should be formed' and the substrate 102 is exposed to where the penetrating region S5 and the semi-transmissive region should be formed; § 2, S3, S4. The first semi-transparent material 112 and the photoresist 120 are sequentially stacked on the substrate 102 having the barrier layer 110 by sputtering, chemical vapor deposition, and the like in the same manner as in Fig. 5'. More specifically, the first semi-penetrating material m is preferably a single main element material having a main element of one of Cr, Si, Mo, Ta, Ti, A1 or a combination of at least two or more elements. Material: or may be a type of material added with ΜΑ' in: a species to the single main element material or the material of the bonding material': The suffix X is a natural number that changes according to the combination of elements. The composition of the first half of the penetrating material 112 can vary widely to deliver only a portion of the illumination within a predetermined wavelength range. In the present invention, the composition of := material: 112 may be selected from the group consisting of: M〇xSly0 N . LJ s· C〇M〇XC〇y ' M〇X〇yNZ ' M〇XSiy〇Z ' /, y Tax〇yNzilx〇y, AlxC〇y, Aix〇yNz AixC〇A, y lxQyNz'TlxC〇y or a combination of them in the group, JL in the car foot -, T number of children. The first half of the natural number and defining the elements of each element + tooth-permeable material 112 is preferably formed by Crx〇y, c CrxOyNz. xC〇y or 14 201107875 Now, please refer to Figure 6, formed on the laser beam and green, and the first half of the penetrating material 112 is exposed to the shadow. The green photoresist is 12 turns, and it passes through the unit S4. , 乂戍 penetration zone SS and second half wear Please refer to Figure 7, using the residual resistance of 120 as a mask, and by the remainder: half. Light penetrating the material 112 penetrates the material 112. Therefore, the barrier layer a, the germanium is removed to remove the bare first half stacked on the substrate 110 which should form the light-shielding region S1 and the first semi-transmissive material 112 on the substrate 102. The position should be formed: the first: half =: 12 formation Where it is. A thousand brothers penetrated a few earlier S2, S3 similar methods '第:: wear 8 through: machine plating, chemical vapor deposition and its with: through the material stacked in the order of the elements 〇 *, 81,: . -: the tooth-permeable material 114 is preferably a single-major element having a main material or a combination of at least one of the two types - or a combination of two or more binding materials - χ 〇χ, Νχ among them To the single main = material or the combination of the material __, where the suffix 组合 combines to change the natural number. It is a matter of the partial second illuminating material 114 to transmit part of the illuminating light within a predetermined wavelength range. In the invention, the composition of the = penetration material m may be selected from

CrxOyNz ^ SixOy . Si Ο χτ y xC〇^ ' 叫扎、SixC〇y、初叫、M〇而、 15 201107875 M〜〇yNz、M〇xCOy、 ivr ·κ π y ινιοχυ, M〇xSiyOzN.M y —叫〜、MoxSiy〇z、CrxOyNz ^ SixOy . Si Ο χτ y xC〇^ ' Called, SixC〇y, initial, M〇, 15 201107875 M~〇yNz, M〇xCOy, ivr ·κ π y ινιοχυ, M〇xSiyOzN.M y - Call ~, MoxSiy〇z,

MoxSiyc〇zN ' MoxSi CO τ rx TaxCOy、Ta 〇 m lyC〇z、Tax〇y、TaxOyNz、 尾以及zHxC〇y或其結合所構成的族群中，其中字 最好地：:數並定義各個元素的原子數目。 ，右半穿透材料112是由k〇y、CrxC(3 ^ Crx〇yNz 所 xC〇y 述所列的半穿透如 料114可被使用除上 第 ^材料之外其可選擇性地與的材料。 牙透材料114必須是由㈣率不同於第—半 112的半穿透材料所形成。也就是 材料v 不卞牙透 ‘、須使用蝕刻率不同於第一半穿透材料112的半 ； 以使只有如圖9所示之區域Α内的第二丰穿、未 材料114、士2 才這 子皮餘刻，而形成在第二半穿透材料H4底下的第 一半2透材料U2則未被蝕刻。 睛參閱圖9 ’光阻120繪製在應形成穿透區S5與第一 半穿透單元S3之處，並且被顯影，藉此第二半穿透材料 114得以被裸露出來。 更具體來說，光阻120被照射並且繪製在應形成穿透 區S5與第一半穿透單元s3之處，而被繪製的光阻區域會 被顯影及移除。因此，光阻120會殘留在第二半穿透材料 114上’並位於應形成遮光區S1、第二半穿透單元S4與第 二半穿透單凡S2之處，而第二半穿透材料114裸露於應形 成穿透區S5與第一半穿透單元％之處。 16 201107875 請參_ 1G，卿殘留在第 阻120來作為遮罩，姓刻並移除第二半ί = 114上的光 中第二半穿透材料114暴露在應形成穿透$材料叫，其 透單元S3的地方。接@ & °° 5與第一半 万接續地，透過脫膜勢 々 pr—’移除保留在第二半穿透材料ιΐ4 : 因此，形成在基板脱上堆疊阻擋層u〇、第mi20。 料U2以及第二半穿透材料114而成的遮光區= = 基板搬上堆疊第二半穿透材料114而成的第—半穿透， 兀S3，形成在基板1G2上堆疊第—半穿透材料⑴而成= 第-半穿透區S3，形成在基板1()2上堆疊第二半穿透 114的第二半穿透區S4，形成在基板1〇2上堆疊第一半穿 透材料112以及第二半穿透材料114而成的第三半穿透區 S2 ’以及形成基板102所暴露的穿透區S5。 圖4a到4ih是圖2的第二實施例之半調式光罩的製造 方法的剖面示意圖。 請參閱圖12，藉由濺鍍、化學氣相沉積以及其類似的 方法，第一半穿透材料112以及光阻12〇依序堆疊在基板 102 上。 更具體來說，第一半穿透材料112最好是一種具有主 要元素為Cr、Si、Mo、Ta、Ti、A1其中之一的單一主要元 素材料或結合至少一種或更多元素的一結合材料，或者也 可以是一種添加有Cox、Ox、Νχ其中之一至該單一主要元 素材料或該結合材料的一材料，其中χ為對應元素組合而 17 201107875 改變的自然數。 夠傳的組成可有不同變化，只要其能 半穿的料照料。在本發财，第— 叫Ν = 2 slx〇y、Slx〇yNz、SixC〇y、sixC〇yNz、M〇xSiy、 x y、M〇x〇yK、MGxCQy、 ㈣_、M。崎、叫、=:、MoxSiyc〇zN ' MoxSi CO τ rx TaxCOy, Ta 〇m lyC〇z, Tax〇y, TaxOyNz, tail and zHxC〇y or a combination thereof, wherein the words are best:: number and define each element The number of atoms. The right semi-penetrating material 112 is composed of k〇y, CrxC (3 ^ Crx〇yNz, xC〇y, the semi-transparent material 114 can be used in addition to the second material, which can be selectively The material of the tooth-permeable material 114 must be formed by a semi-transparent material having a (four) rate different from that of the first half 112. That is, the material v is not squeezing, and the etching rate must be different from that of the first semi-penetrating material 112. The first half of the second semi-penetrating material H4 is formed by the second surfacing, the unfinished material 114, and the second sub-skin in the region 如图 as shown in FIG. The material U2 is not etched. See Figure 9 'The photoresist 120 is drawn where the penetration region S5 and the first semi-transparent unit S3 should be formed and developed, whereby the second semi-permeable material 114 is exposed More specifically, the photoresist 120 is illuminated and drawn where the penetrating region S5 and the first semi-transparent unit s3 should be formed, and the drawn photoresist region is developed and removed. Therefore, the photoresist 120 will remain on the second semi-through material 114' and be located in the shading area S1, the second semi-transparent unit S4 and the second semi-transparent sheet Where S2, and the second half of the penetrating material 114 is exposed to the area where the penetrating zone S5 and the first semi-transparent unit should be formed. 16 201107875 Please refer to _ 1G, and the residue remains in the first resistance 120 as a mask. The last name is engraved and removed. The second half of the light on 114 is exposed to the second half of the material 114 that is exposed to penetrate the $material, which is transmitted through the unit S3. Connect @ & °° 5 with the first half Continually, the second semi-penetrating material ιΐ4 is removed through the stripping force 々 pr—therefore, the stacking barrier layer u〇, the mi20, the material U2, and the second semi-penetrating material 114 are formed on the substrate. The opaque area = = the first half of the substrate is stacked with the second semi-penetrating material 114, and the 兀S3 is formed by stacking the first semi-penetrating material (1) on the substrate 1G2 = the first-half-through The through-region S3 forms a second semi-transmissive region S4 in which the second semi-transmission 114 is stacked on the substrate 1 (2), and the first semi-penetrating material 112 and the second semi-penetrating material are stacked on the substrate 1〇2. The third semi-transmissive region S2' formed by 114 and the penetrating region S5 exposed by the substrate 102. Figures 4a to 4ih are the halftone mask of the second embodiment of Fig. 2. A schematic cross-sectional view of the fabrication method. Referring to Figure 12, the first semi-through material 112 and the photoresist 12 are sequentially stacked on the substrate 102 by sputtering, chemical vapor deposition, and the like. The first semi-transparent material 112 is preferably a single main element material having one of the main elements of Cr, Si, Mo, Ta, Ti, A1 or a bonding material combining at least one or more elements, or It may be a material to which one of Cox, Ox, yttrium is added to the single main element material or the bonding material, wherein χ is a natural number changed by the corresponding element combination and 17 201107875. The composition of the transmission can vary, as long as it can be taken care of. In this Fortune, the first - Ν = 2 slx〇y, Slx〇yNz, SixC〇y, sixC〇yNz, M〇xSiy, x y, M〇x〇yK, MGxCQy, (four) _, M. Saki, call, =:,

Tix〇 ^Ti 〇Χ〇Λ ' Alx〇y/ AlxC〇y ' Alx〇yNz ' AlxC〇yNz ' y X yNz TlxCOy或其結合所構成的族群中的其中任 二者。最好地’第—半穿透材料112是由⑽、c 所形成，其中字尾^及2為自_並定義各 個兀素的原子數目。 分 /月參閱圖13’形成在第一半穿透材料112上的光阻咖 被雷f光束所照射麟製，藉以讓被输製的綠12〇顯影 以及弟-半穿透材料112裸露在應形成第二半穿透單元以 之處。 請參閱圖14,利用殘留在基板1〇2上的光阻12〇來作 為k罩並藉由餘刻製程（etching pr〇cess)來移除裸露的 第一半穿透材料112。因此，透過移除第一半穿透材料ιΐ2, 基板102裸露出應形成第二半穿透材料114之處。 明參閱圖丨5 ’藉由濺鍍、化學氣相沉積以及其類似的 方法，第二半穿透材料114與光阻12〇依序堆 一半穿透材料m的基板⑽上。 18 201107875 更具體來說，第二半穿透材料114最好是一種具有主 要元素為Cr、Si、Mo、Ta、Ti、A1其中之一的單一主要元 素材料或結合至少二種或更多元素的一結合材料，或者也 可以是一種添加有Cox、Ox、Nx其中之一至該單一主要元 素材料或該結合材料的一材料，其中X為對應元素纟且合而 改變的自然數。 第二半穿透材料114的組成可有不同變化，只要其能 夠傳遞預定波長範圍内的部分照射光。在本發明中，第二 半穿透材料114的組成可以選自於由CrxOy、CrxCOy、 CrxOyNz、SixOy、SixOyNz、SixCOy、SixCOyNz、MoxSiy、 MoxOy、MoxOyNz、MoxCOy、MoxOyNz、MoxSiyOz、 MoxSiyOzN、MoxSiyCOzN、MoxSiyCOz、TaxOy、TaxOyNz、 TaxCOy、TaxOyNz、AlxOy、AlxCOy、AlxOyNz、AlxCOyNz、 TixOy、TixOyNz、TixCOy或其結合所構成的族群中，最好地， 第一半穿透材料112是由Crx〇y、CrxCOy或CrxOyNz所形 成，其中字尾X、y及z為自然數並定義各個元素的原子數 目。 最好地，若第一半穿透材料112是由CrxOy、CrxCOy 或CrxOyNz所形成時，第二半穿透材料114可被使用除上 述所列的半穿透材料之外其可選擇性地與Cr蝕刻的材料。 第二半穿透材料114使用一種蝕刻率不同於第一半穿 透材料112的半穿透材料。也就是說’第二半穿透材料114 必須使用一種蝕刻率不同於第一半穿透材料U2的半穿透 19 201107875 材料，以使只有如圖16 114被钱刻，而形成在第二半穿内的第二半穿逯材料 透材料112則未被敍亥J。 ；斗114底下的第—半穿 π參閱® 16’形成在第二 被雷射光束所照射•製，材料114上的光阻120 =二半穿透材料m裸露:應顯影’ 透單元S3之處。 乂芽遗feS5與弟一半穿 請參閱圖心利用殘留 阻⑽來作為遮罩，並第穿透材枓叫上的光 料H4。 糾如以程來移除第二半穿透材 因此’形成由第一丰空嗲 透單元S3、由第材料112所形成的第-半穿 乐一牛牙透材料114所形 元以及堆疊第一及第二 、弟「半穿透單 半穿透單元L第m_U22 三 牙边）之處’而及第二半穿透材料 亚形成在應形成遮光區S1之處。 114堆疊 清茶閱圖18 ’藉由频、化學氣相沉積 方法，阻擒層H0與光阻12〇依序堆疊在I 1似的 材料U4的基板1G2上。阻擔層UQ可以=第^ =透 :的材料所形成，例如可⑽Crx〇y所形成:膜;= 請參閱圖19,形成在阻擋層削上的先阻〗 光束所照射及繪製，其中繪製的姐12〇被顯影，讓= 201107875 層110裸露在應形成穿透區s 處。 、千芽還GS2.、S3、S42 利細在鳴㈣上的光 =罩:並藉由鋪程來移除位在 : §2、.84與_85之處叫露 穿；^ 透過脫膜製程，移除·υ接續地， 矛多除保留在阻检層11〇上的光阻⑽。 卜 ’形成在基板1G2上堆疊第-半穿透材料”， 第二半穿透材料114以 擔 ’、' 、' 而成的遮光區S1，形 成由基板搬上的第-半穿透材料112所形成的第= 透單元S3、由基板102上的第二半穿透材料U4所形成 半穿透單元S4、堆疊第一及第二半穿透材料 ^ . 成的半穿透單元S2、以及基板1〇2所暴露的穿透區％。 如上所述’本發明第一與第二實施例之半調式°光罩製 造方法如圖2a至圖2i與圖4a至圖41所示的整個處理步驟 能減少製程次數’因而減少製造時間與成本。 【產業利用性】 本發明在於產業上的應用在於：半調式光罩，1勺 一具有多重半穿透單元的半穿透單區，复中 了 "" 办、未， ，、甲利用至少二半 牙透材料，使多重半穿透單元得以具有 ，波此不同的穿透 平，而一雖光區形成在至少二半穿透材料的一上表面戋 下表面上’而此半調式光罩基於至少二種 ° f5| A,., 千穿透材料的不 ⑽刻率’從而能選擇性地侧半穿透材料，進 紅’以減少步驟次數。 衣 21 201107875 雖然本發明以前述實施例揭露如上，然其並非用以限 定本發明，任何熟習相像技藝者，在不脫離本發明之精神 和範圍内，所作更動與潤飾之等效替換，仍為本發明之專 利保護範圍内。 【圖式簡單說明】 圖1是本發明第一實施例之半調式光罩的剖面示意圖。 圖2至圖10是圖1的第一實施例之半調式光罩的製造方法 的剖面示意圖。 圖11是本發明第二實施例之半調式光罩的剖面示意圖。 圖12至圖20是圖2的第二實施例之半調式光罩的製造方 法的剖面示意圖。 【主要元件符號說明】 100 . 半調式光罩 102 基板 110 阻擋層 112 第一半穿透材料 114 第二半穿透材料 120 光阻Tix〇 ^Ti 〇Χ〇Λ 'Alx〇y/ AlxC〇y 'Alx〇yNz 'AlxC〇yNz ' y X yNz TlxCOy or any combination of the two. Preferably, the 'first-passive material 112' is formed by (10), c, wherein the suffixes ^ and 2 are from _ and define the number of atoms of each element. Referring to FIG. 13', the photoresist formed on the first semi-transmissive material 112 is irradiated by the Ray-beam, whereby the green 12-inch developed and the trans-semi-penetrating material 112 are exposed. The second half of the penetrating unit should be formed. Referring to Fig. 14, the photoresist 12 残留 remaining on the substrate 1 〇 2 is used as a hood and the bare first permeable material 112 is removed by an etching process. Thus, by removing the first semi-through material ι 2, the substrate 102 is exposed where the second semi-permeable material 114 should be formed. Referring to Figure 5' by sputtering, chemical vapor deposition, and the like, the second semi-permeable material 114 and the photoresist 12 are sequentially stacked on the substrate (10) of the material m. 18 201107875 More specifically, the second semi-through material 114 is preferably a single main element material having at least one of the main elements Cr, Si, Mo, Ta, Ti, A1 or a combination of at least two or more elements A bonding material, or a material to which one of Cox, Ox, Nx is added to the single main element material or the bonding material, wherein X is a natural number corresponding to the element enthalpy and combined. The composition of the second semi-permeable material 114 can vary differently as long as it is capable of delivering a portion of the illumination light over a predetermined range of wavelengths. In the present invention, the composition of the second semi-permeable material 114 may be selected from CrxOy, CrxCOy, CrxOyNz, SixOy, SixOyNz, SixCOy, SixCOyNz, MoxSiy, MoxOy, MoxOyNz, MoxCOy, MoxOyNz, MoxSiyOz, MoxSiyOzN, MoxSiyCOzN, MoxSiyCOz Of the populations of TaxOy, TaxOyNz, TaxCOy, TaxOyNz, AlxOy, AlxCOy, AlxOyNz, AlxCOyNz, TixOy, TixOyNz, TixCOy or combinations thereof, preferably, the first half of the penetrating material 112 is Crx〇y, CrxCOy or CrxOyNz is formed in which the suffixes X, y, and z are natural numbers and define the number of atoms of each element. Preferably, if the first semi-permeable material 112 is formed of CrxOy, CrxCOy or CrxOyNz, the second semi-permeable material 114 can be selectively used in addition to the semi-permeable materials listed above. Cr etched material. The second semi-permeable material 114 uses a semi-permeable material having an etch rate different from that of the first semi-permeable material 112. That is to say, 'the second semi-penetrating material 114 must use a semi-penetrating 19 201107875 material having an etching rate different from that of the first semi-through material U2, so that only the image is engraved as shown in FIG. The second half of the piercing material piercing material 112 is not used by Xu Hai J. The first-half-through π reference® 16' under the bucket 114 is formed in the second laser beam. The photoresist 120 on the material 114 = the second-half penetration material m is exposed: it should be developed 'through the unit S3 At the office.乂 遗 遗 feS5 and the younger half wear Please refer to the figure using the residual resistance (10) as a mask, and the first material is squeaked on the light H4. Correctly removing the second semi-permeable material to form a shape of the first-half wearing a denture material 114 formed by the first material 112 and the stacking The first and second, the "semi-penetrating single-transparent unit L m_U22 three-toothed edge" and the second semi-penetrating material sub-formed in the area where the shading area S1 should be formed. 114 stacked tea reading Figure 18 'By the frequency and chemical vapor deposition method, the barrier layer H0 and the photoresist 12 are sequentially stacked on the substrate 1G2 of the material U4 like I. The resist layer UQ can be formed by the material of the ^^: For example, it can be formed by (10)Crx〇y: film; = Please refer to Figure 19, the first resistance formed on the barrier layer is irradiated and drawn by the beam, wherein the drawn 12〇 is developed, let = 201107875 layer 110 exposed in the Forming the penetrating zone s., Thousands of buds GS2., S3, S42 The light on the sound (4) = cover: and by the paving to remove the position: § 2, .84 and _85 Excavation; ^ Through the stripping process, removing and splicing, the spear removes the photoresist (10) remaining on the obstruction layer 11 。. Formed on the substrate 1G2 stacked first-half through The second semi-transmissive material 114 forms a light-shielding region S1 formed of ', ', and forms a third transparent unit S3 formed by the first semi-transparent material 112 carried by the substrate, and is formed on the substrate 102. The second semi-transparent material U4 forms a semi-transparent unit S4, stacks the first and second semi-transmissive materials, and forms a transflective unit S2, and a penetration area exposed by the substrate 1〇2. As described above, the half-tone mask manufacturing method of the first and second embodiments of the present invention can reduce the number of processes by reducing the number of processes as shown in FIGS. 2a to 2i and FIGS. 4a to 41, thereby reducing manufacturing time and cost. . [Industrial Applicability] The invention is applied in the industry: a half-tone mask, a spoonful of a semi-transparent single zone with multiple semi-transparent units, and a re-establishment of """ At least two halves of the material are permeable to the plurality of semi-transparent elements, and the different penetrations are flat, and a light zone is formed on an upper surface of the at least two semi-permeable materials. The mask is based on at least two types of f5|A, ., a thousand penetration material that does not (10) engraved 'to selectively side-through the material, into the red' to reduce the number of steps. The present invention is disclosed above in the foregoing embodiments, and is not intended to limit the invention, and it is still possible for those skilled in the art to make equivalent substitutions of the modifiers and retouchings without departing from the spirit and scope of the invention. Within the scope of patent protection of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a halftone mask of a first embodiment of the present invention. 2 to 10 are schematic cross-sectional views showing a method of manufacturing the halftone mask of the first embodiment of Fig. 1. Figure 11 is a cross-sectional view showing a halftone mask of a second embodiment of the present invention. 12 to 20 are schematic cross-sectional views showing a method of manufacturing the halftone mask of the second embodiment of Fig. 2. [Main component symbol description] 100. Halftone mask 102 Substrate 110 Barrier layer 112 Half penetrating material 114 Second semi-through material 120 Photoresist

A、B S1 S2 、 S3 、 S4 S5 區域 遮光區 半穿透區 穿透區 22A, B S1 S2, S3, S4 S5 area shading area semi-transmission area penetration area 22

Claims (1)

201107875 七、申請專利範圍： 1. 一種半調式光罩，包括： 一基板； 穿透區，形成在該基板上，用以傳送—預定波 長範圍的一照射光；以及 半牙透區，制用二種或更多的半穿透材料而 具有-多重半穿透單元，該多重半穿透單元對照射在 忒基板上的一預定波長範圍的一光線會有二種或更多 彼此不同的穿透率。 2. 如申請專利範圍第i項所述之半調式光罩，更包括一 遮光區’其具有形成在該二種或更多半穿透材料之— 上表面或一下表面的一阻擋層。 3. 如申請專利範圍第！項所述之半調式光罩，更包括— 遮光區，其具有形成在該二種或更多半穿透材料之間 的一阻擋層。 4. 如申凊專利範圍第1項所述之半調式鮮，其中該半 穿透材料包括一主要元素為Cr、Si、M〇、Ta、Ti、A卜 Zr、Sn、Zn、In、Mg、Hf、v、Nd、Ge Mg〇Ai^ 或Si3N4其中之一的一單一主要元素材料或結合至少 -種或更多元素的的—結合材料，或者也可以是一種 添加有C〇x、〇χ、Νχ、Cx、Fx以及&至該單—主要元 素材料或缝合材料的-㈣，其+字尾χ為一自然 數並且疋義各個化學元素的原子數目。 23 201107875 5.如申請專利範圍第1項所述之半調式朵 少二種半穿透材料各自具有不同的率。其中該至 6· -種半調式料的製造m括以下步驟： 形成一阻擋層在形成有一遮光區的一美板上. 形成一半穿透區在形.成有該阻; 7· 該半穿透區利用至少二種半穿透材料所形成=今半 穿透區具有三種或更多彼此不同的穿透率.以以 形成堆疊該阻擔層與該至少二該半穿;^ ^ 遮光區，以及該基板所裸露之處的— 如申請專利範圍第6項所述之半調=° 法，其中在利用至少二種半穿透材料，製邊方 更多彼此不同的穿透率之形成有該^ 上，形成該半穿透單元的步驟包括：“勺该基板 在該阻擔層上依序堆疊一第—穿透 阻夕曝光及顯影該光阻，以使—必需區域被=露二 +牙透材料，以移除裸露的該第-半穿透材料； β在該形成有該第一半穿透材料的該基板上依序堆 Γ第二半穿透㈣以及另—綠，鱗光及顯影該 先阻’以使另m域被暴露於該第二半穿 料’以移除裸露的該第二半穿透材料；以及 在絲板上形成由該第—半穿透材料所形成的〜 第一半穿透單元、由該第二半穿透材料所形成的1 24 201107875 二半穿透單元、以及堆疊該第一半穿透材料與該第二 半穿透材料而成的一第三半穿透單元。 8. 如申請專利範圍第7項所述之半調式光罩的製造方 法，其中該至少二種半穿透材料各自具有不同的蝕刻 率。 9. 如申請專利範圍第8項所述之半調式光罩的製造方 法，其中該半穿透材料包括一主要元素為Cr、Si、Mo、 Ta、Ti、A卜 Zr、Sn、Zn、In、Mg、Hf、V、Nd、Ge、 Mg0-Al203或Si3N4其中之一的一單一主要元素材料 或結合至少二種或更多元素的的一結合材料，或者也 可以是一種添加有Cox、Ox、Nx、Cx、Fx以及Bx至該 單一主要元素材料或該結合材料的一材料，其中字尾 X為一自然數並且定義各個化學元素的原子數目。 10. —種半調式光罩的製造方法，包括以下步驟： 形成一半穿透區在一基板，該半穿透區利用至少 二種半穿透材料而具有一多重半穿透單元，該多重半 穿透單元具有三種或更多彼此不同的穿透率； 在該多重半穿透單元上依序堆疊一阻擋層與一光 阻，並曝光及顯影該光阻，以使一必需區域被暴露於 該阻擋層，以移除裸露的該光阻；以及 在該至少二種半穿透材料上形成由該阻擋層所形 成的一遮光區，以及形成該基板所裸露之處的一穿透 25 201107875 區 11. 申明專仙ϋ第10項所述之半赋光罩的製造方 /夕其中在利用至少二種半穿透材料，以具有三種或 7皮此不同的穿透率之形成有該阻擋層的該基板 开>成該半穿透區的步驟包括： ，在該基板上依序堆疊一第—半穿透材料以及一光 並曝光及顯影該光阻H必需區域被暴露於 Μ 一半穿透材料’以移除裸露的該第-半穿透材料； 義二化成有該第一半穿透材料的該基板上依序堆 :半穿透材料以及另—光阻，並曝光及顯影該 ’以使另―必需區域被暴露於該第二半穿 "、以移除裸露的該第二半穿透材料；以及 第4=上形成由該第-半穿透材料所形成的〜 二半穿=早’、由該第二半穿透材料所形成的1 半穿_ 从堆4該第—半穿透材料與該第二 :透材料而成的—第三半穿透單元。 t專利範圍第11項所述之半調式光罩的以大 法率:其⑽、二種半穿透材料各自具有罩:； 13·::=^12項所述之半調式光罩的製造方 二；中牙透材料包括一主要元素為⑽ mzr'sn，、 g Hf、v、Nd、Ge、 26 201107875 Mg0-Al203或Si3N4其中之一的一單一主要元素材料 或結合至少二種或更多元素的的一結合材料，或者也 可以是一種添加有Cox、Ox、Nx、Cx、Fx以及Bx至該 單一主要元素材料或該結合材料的一材料，其中字尾 X為一自然數並且定義各個化學元素的原子數目。 27201107875 VII. Patent application scope: 1. A half-tone mask comprising: a substrate; a penetration region formed on the substrate for transmitting an illumination light of a predetermined wavelength range; and a half-teeth region for manufacturing Two or more semi-penetrating materials having a multiple semi-transparent unit that has two or more different light rays for a predetermined wavelength range irradiated on the germanium substrate Transmittance. 2. The halftone reticle of claim i, further comprising a opaque region having a barrier layer formed on the upper or lower surface of the two or more semi-permeable materials. 3. If you apply for a patent scope! The halftone reticle described further includes a opaque region having a barrier layer formed between the two or more semi-permeable materials. 4. The half-tone type according to claim 1, wherein the semi-transparent material comprises a main element of Cr, Si, M〇, Ta, Ti, A, Zr, Sn, Zn, In, Mg. a single main element material of one of Hf, v, Nd, Ge Mg〇Ai^ or Si3N4 or a combination material of at least one or more elements, or may be added with C〇x, 〇 χ, Νχ, Cx, Fx, and & to the single—the main elemental material or the suture material—(4), whose + suffix is a natural number and derogate the atomic number of each chemical element. 23 201107875 5. The semi-tone semi-transparent materials described in item 1 of the patent application have different rates. Wherein the manufacturing of the semi-tone material comprises the following steps: forming a barrier layer on a beautiful plate on which a light-shielding region is formed. Forming a half-transparent region in the shape of the film; forming the barrier; The through-region is formed by using at least two semi-transparent materials. The present-half penetrating region has three or more different transmittances from each other to form a stack of the resistive layer and the at least two of the semi-pierced regions; And the semi-adjusted method of the substrate as described in claim 6, wherein in the use of at least two semi-penetrating materials, the edge formation is more different from each other. The step of forming the semi-transparent unit includes: "the scooping substrate is sequentially stacked on the resistive layer to sequentially expose and develop the photoresist so that the necessary area is = dew a second + tooth-permeable material to remove the exposed first-semi-penetrating material; β sequentially stacking the second half-through (four) and the other-green on the substrate on which the first semi-permeable material is formed Scaling and developing the first resistance 'to expose another m-domain to the second half-through' to remove the exposed a second half penetrating material; and forming on the wire plate a ~-half penetrating unit formed by the first semi-transmissive material, and a 1 24 201107875 two-half penetrating unit formed by the second semi-penetrating material And a third semi-transmissive unit formed by stacking the first semi-transmissive material and the second semi-transmissive material. 8. The method for manufacturing a half-tone mask according to claim 7, wherein The at least two semi-transparent materials each have a different etching rate. 9. The method for manufacturing a half-tone mask according to claim 8, wherein the semi-transparent material comprises a main element of Cr, Si, a single main element material of one of Mo, Ta, Ti, A, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, Mg0-Al203 or Si3N4 or a combination of at least two or more elements a bonding material, or a material to which Cox, Ox, Nx, Cx, Fx, and Bx are added to the single main element material or the bonding material, wherein the suffix X is a natural number and defines each chemical element. The number of atoms. 10. - The system of semi-tone masks The method comprises the steps of: forming a semi-transparent zone on a substrate, the semi-transparent zone having at least two semi-permeable materials and having a plurality of semi-transparent cells having three or more Different transmittances from each other; a barrier layer and a photoresist are sequentially stacked on the multiple semi-transparent unit, and the photoresist is exposed and developed such that a necessary area is exposed to the barrier layer to remove the bare And forming a light-shielding region formed by the barrier layer on the at least two semi-transparent materials, and forming a penetration of the exposed portion of the substrate. 25 201107875 District 11. Affirmation The manufacturing method of the above-mentioned semi-masks of 10th, wherein at least two kinds of semi-transmissive materials are utilized, and the substrate having the barrier layer formed with three or 7 different transmittances is opened. The step of the semi-transmissive region includes: sequentially stacking a first-semi-penetrating material on the substrate and a light and exposing and developing the photoresist H necessary region to be exposed to the 一半 half-penetrating material 'to remove the bare The first semi-penetrating material; Dividing into a substrate having the first semi-penetrating material sequentially: semi-penetrating material and another photoresist, and exposing and developing the 'to make another necessary region exposed to the second half-through" And removing the exposed second semi-penetrating material; and forming a second semi-penetrating material formed by the second semi-penetrating material 1 semi-through _ from the stack 4 the first semi-penetrating material and the second: through the material - the third semi-penetrating unit. The semi-modulating reticle according to Item 11 of the patent scope has a large law rate: (10), the two semi-transmissive materials each have a cover:; the manufacture of the half-tone mask described in Item 13:::=^12 The medium-tooth material comprises a single main element material of one of (10) mzr'sn, g Hf, v, Nd, Ge, 26 201107875 Mg0-Al203 or Si3N4 or a combination of at least two or more a bonding material of an element, or a material to which Cox, Ox, Nx, Cx, Fx, and Bx are added to the single main element material or the bonding material, wherein the suffix X is a natural number and each The number of atoms of a chemical element. 27
TW099116366A 2009-05-21 2010-05-21 Half tone mask and manufacturing method of the same TWI434133B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090044351A KR101186890B1 (en) 2009-05-21 2009-05-21 Half tone mask and method of manufacturig the same

Publications (2)

Publication Number Publication Date
TW201107875A true TW201107875A (en) 2011-03-01
TWI434133B TWI434133B (en) 2014-04-11

Family

ID=43126666

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099116366A TWI434133B (en) 2009-05-21 2010-05-21 Half tone mask and manufacturing method of the same

Country Status (5)

Country Link
JP (1) JP5432369B2 (en)
KR (1) KR101186890B1 (en)
CN (1) CN102460645B (en)
TW (1) TWI434133B (en)
WO (1) WO2010134774A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205880497U (en) * 2016-05-30 2017-01-11 鄂尔多斯市源盛光电有限责任公司 Mask plate
CN108761999A (en) * 2018-07-24 2018-11-06 京东方科技集团股份有限公司 Mask plate and preparation method thereof, array substrate and preparation method thereof, display device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP4570632B2 (en) * 2006-02-20 2010-10-27 Ｈｏｙａ株式会社 Four-tone photomask manufacturing method and photomask blank processed product
TWI432885B (en) * 2006-02-20 2014-04-01 Hoya Corp Four-gradation photomask manufacturing method and photomask blank for use therein
KR100787088B1 (en) * 2006-04-03 2007-12-21 엘지마이크론 주식회사 a half tone mask having multi?half permeation part and a method for manufacturing thereof
KR20070101428A (en) * 2006-04-10 2007-10-17 엘지마이크론 주식회사 Half tone mask and method for manufactureing thereof
KR101255616B1 (en) * 2006-07-28 2013-04-16 삼성디스플레이 주식회사 Multi-tone optical mask, method of manufacturing the same and method of manufacturing thin film transistor substrate using the same
JP5220100B2 (en) * 2007-05-11 2013-06-26 エルジーイノテック株式会社 Halftone mask having a plurality of semi-transmissive portions and manufacturing method thereof
JP4714311B2 (en) * 2008-02-28 2011-06-29 Ｈｏｙａ株式会社 Multi-tone photomask manufacturing method and pattern transfer method for thin film transistor substrate
TW201035673A (en) * 2008-11-20 2010-10-01 Hoya Corp Multitone photomask and method of manufacturing the same

Also Published As

Publication number Publication date
JP2012527638A (en) 2012-11-08
KR101186890B1 (en) 2012-10-02
WO2010134774A2 (en) 2010-11-25
JP5432369B2 (en) 2014-03-05
CN102460645B (en) 2015-03-18
CN102460645A (en) 2012-05-16
TWI434133B (en) 2014-04-11
KR20100125575A (en) 2010-12-01
WO2010134774A3 (en) 2011-02-24

Similar Documents

Publication Publication Date Title
JP5220100B2 (en) Halftone mask having a plurality of semi-transmissive portions and manufacturing method thereof
JP2013167907A (en) Half tone mask and method for manufacturing the same
KR101079161B1 (en) Half tone mask and fabricating method
JP2012531620A (en) Method for manufacturing halftone mask
TW201107875A (en) Half tone mask and manufacturing method of the same
JP5336655B2 (en) Halftone mask and manufacturing method thereof
KR100787090B1 (en) a half tone mask having multi?half permeation part and a method for manufacturing thereof
KR20070101902A (en) Half tone mask having multi half permeation part and method for manufacturing thereof
JP5654577B2 (en) Halftone mask and manufacturing method thereof
KR20070101428A (en) Half tone mask and method for manufactureing thereof
KR101168409B1 (en) Photo mask having multi half permeation part and Method for manufacturing thereof
KR100787088B1 (en) a half tone mask having multi?half permeation part and a method for manufacturing thereof
KR101776317B1 (en) half tone mask having multi half permeation part
KR101776316B1 (en) half tone mask having multi half permeation part
KR101776315B1 (en) half tone mask having multi half permeation part
KR20160020054A (en) Milti-Gray Scale Photomask and manufacturing mathod thereof
KR100802448B1 (en) Half tone mask having etching stopper layer and method for manufacturing thereof