JP2012527638A - Halftone mask and manufacturing method thereof - Google Patents

Abstract

The present invention provides a halftone mask and a method of manufacturing the same that can reduce time and cost by reducing the number of steps of a halftone mask having multiple transflective portions.
A halftone mask according to the present invention includes a substrate, a transmission region formed on the substrate and transmitting light of a predetermined wavelength band to be irradiated, and at least two semi-transparent materials. And a semi-transmission region having a multiple semi-transmission part that transmits two or more light beams of a predetermined wavelength band with different transmittances.
[Selection] Figure 1

Description

  The present invention relates to a halftone mask that can reduce time and cost by reducing the number of steps of a halftone mask having multiple transflective portions, and a manufacturing method thereof.

  Generally, a liquid crystal display device displays an image by adjusting the light transmittance of a liquid crystal having dielectric anisotropy using an electric field. For this purpose, the liquid crystal display device includes a liquid crystal display panel that displays an image, a drive circuit that drives the liquid crystal display panel, and a backlight assembly that provides light to the liquid crystal display panel.

  The liquid crystal display panel includes a color filter substrate and a thin film transistor substrate bonded with a sealing material with a liquid crystal interposed therebetween.

  The color filter substrate includes a black matrix, a color filter, and a common electrode stacked on an insulating substrate.

  The thin film transistor substrate includes a gate line and a data line formed to intersect with each other on the lower insulating substrate, and a thin film transistor connected between the gate line, the data line, and the pixel electrode. The thin film transistor supplies a data signal from the data line to the pixel electrode in response to a scan signal from the gate line.

  Such a thin film transistor substrate is formed using a number of mask processes, and in order to reduce the mask process, the process of forming the source and drain electrodes and the semiconductor pattern is performed in one mask process using a halftone mask. Form.

  In this case, the halftone mask includes a blocking region that blocks ultraviolet rays, a semi-transmissive region that partially transmits ultraviolet rays, and a transmissive region that transmits ultraviolet rays. The semi-transmission region of such a halftone mask may be formed by multiple semi-transmission portions having different transmittances. In order to form a multiple semi-transmissive portion, a large number of semi-transmissive materials having different transmittances are used.

  That is, in order to form semi-transmissive portions having different transmittances in the semi-transmissive region, semi-transmissive materials having different transmittances are used in the semi-transmissive region. In such a method of forming a halftone mask having three or more different semi-transmissive portions, after the first semi-transmissive material is laminated, the first semi-transmissive material is patterned by a photolithography process and an etching process. Then, the second semi-transmissive material is laminated again, and after patterning the second semi-transmissive material in the photolithography process and the etching process, the third semi-transmissive material is laminated, and the third semi-transmissive material is formed in the photolithography process and the etching process. By patterning in step 3, three transflective regions having different transmittances can be formed.

  As described above, the photolithography process and the etching process are performed on each of the different translucent materials in order to form the multiple transflective portion, which increases the number of processes and accordingly increases the time and cost. there were.

  In order to solve the above problems, the present invention provides a halftone mask that can reduce the cost and time by reducing the number of steps of a halftone mask having multiple transflective portions, and a method of manufacturing the same.

  In order to achieve the above technical problem, a halftone mask according to the present invention includes a substrate, a transmission region that is formed on the substrate and transmits light of a predetermined wavelength band to be irradiated, and at least two semi-transmissions. And a semi-transmission region having a multiple semi-transmission portion that transmits light of a predetermined wavelength band irradiated on the substrate with two or more different transmittances using a substance.

  The halftone mask may further include a blocking region having a blocking layer formed on or under the at least two semi-transmissive materials.

Here, the translucent materials are Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, spinel (MgO—Al ₂ O ₃ ), sialon. A substance having any one of (Si ₃ N ₄ ) as a main element, a composite substance in which at least two of these elements are mixed, or a single main element substance or a composite substance, and CO _x , O _x , It is a substance to which at least one of N _x , C _x , F _x , B _x (where subscripts x, y, z are natural numbers, meaning the number of chemical elements) is added. To do.

  Further, each of the at least two semi-transparent materials is formed of a semi-permeable material having different etching ratios.

  In order to achieve the above technical problem, a method of manufacturing a halftone mask according to the present invention includes a step of forming a blocking layer on a substrate on which a blocking region is formed, and a substrate on which the blocking layer is formed. Forming a semi-transmission region having three or more semi-transmission portions having different transmittances by using at least two semi-transmission materials; and a blocking region in which the blocking layer and at least two semi-transmission materials are laminated And forming a transmissive region where the substrate is exposed.

  Here, the step of forming three or more semi-transmissive portions having different transmittances using at least two semi-transmissive materials on the substrate on which the blocking layer is formed includes: A step of laminating a semi-transmissive material and a photoresist in order, and then exposing and developing the photoresist so that a necessary region of the first semi-transmissive material is exposed, and removing the exposed first semi-transmissive material. And laminating a second semi-transmissive material and a photoresist in order on the substrate on which the first semi-transmissive material is formed, and then exposing the photoresist so that a necessary region of the second semi-transmissive material is exposed. And developing to remove the exposed second semi-transmissive material, a first semi-transmissive portion in which the first semi-transmissive material is laminated on the substrate, and a second semi-transmissive material on the substrate. Second transflective portion and the substrate Said first and second semi-transparent material, characterized in that it and forming a third semitransparent portions stacked.

  Here, materials having different etching ratios are used as the at least two semi-transmissive materials.

The translucent material is a composite material in which Cr, Si, Mo, Ta, Ti, and Al are main elements and at least two of these main elements are mixed, or the main elements are CO _x , O It is a substance to which at least one of _x and N _x is added.

  In order to solve the above technical problem, a method of manufacturing a halftone mask according to the present invention uses at least two transflective materials on a substrate to provide three or more multiple transflective portions having different transmittances. A step of forming a semi-transparent region, and after sequentially laminating a blocking layer and a photoresist on the multiple semi-transmissive portion, the photoresist is exposed and developed so that a necessary region of the blocking layer is exposed. Removing the exposed photoresist; and forming a blocking region having a blocking layer formed on the at least two semi-transmissive materials to form a transmitting region from which the substrate is exposed. It is characterized by.

  Here, the step of forming a semi-transmissive region having multiple semi-transmissive portions having three or more different transmittances using at least two semi-transmissive materials on the substrate includes forming a first semi-transmissive region on the substrate. After sequentially stacking a material and a photoresist, exposing and developing the photoresist so that a necessary region of the first semi-transmissive material is exposed, and removing the exposed first semi-transmissive material; A second semi-transmissive material and a photoresist are sequentially stacked on the substrate on which the first semi-transmissive material is formed, and then the photoresist is exposed and exposed so that a necessary region of the second semi-transmissive material is exposed. Developing and removing the exposed second semi-transmissive material, a first semi-transmissive portion having the first semi-transmissive material laminated on the substrate, and a second semi-transmissive material being laminated on the substrate. A second semi-transmissive portion and the base Characterized in that it comprises the steps of forming a third semi-transparent portion of the first and second semi-transmission material are stacked above the.

  Here, materials having different etching ratios are used as the at least two semi-transmissive materials.

The translucent material is a composite material in which Cr, Si, Mo, Ta, Ti, and Al are main elements and at least two of these main elements are mixed, or the main elements are CO _x , O It is a substance to which at least one of _x and N _x is added.

  The halftone mask according to the present invention uses at least two semi-transparent materials to cut off a semi-transmission region where multiple semi-transmission portions having different transmittances are formed and an upper portion or a lower portion of at least two semi-transmission materials. A blocking region in which a layer is formed. In the halftone mask having such a structure, since at least two semi-transparent materials have different etching ratios, the semi-transparent material is selectively etched during the process, thereby reducing the number of processes and simplifying the process. Is achieved. Furthermore, simplification of the process can reduce time and cost, and improve productivity.

It is sectional drawing which shows the halftone mask which concerns on 1st Example of this invention. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 1st Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 1st Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 1st Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 1st Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 1st Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 1st Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 1st Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 1st Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 1st Example of this invention shown in FIG. It is sectional drawing which shows the halftone mask which concerns on 2nd Example of this invention. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 2nd Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 2nd Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 2nd Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 2nd Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 2nd Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 2nd Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 2nd Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 2nd Example of this invention shown in FIG. It is sectional drawing which shows the manufacturing method of the halftone mask which concerns on 2nd Example of this invention shown in FIG.

  Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to FIGS.

  FIG. 1 is a cross-sectional view showing a halftone mask according to a first embodiment of the present invention.

  As shown in FIG. 1, the halftone mask 100 includes a blocking region S1, semi-transmissive regions S2, S3, S4 having multiple semi-transmissive portions, and a transmissive region S5 on a substrate 102.

  The substrate 102 is a transparent substrate that completely transmits light of a predetermined wavelength band irradiated on the substrate 102. For example, the substrate 102 can be formed of quartz, and any transparent material that transmits light can be used. is there.

  The semi-transmissive regions S2, S3, and S4 include multiple semi-transmissive portions so as to transmit light of a predetermined wavelength band irradiated on the substrate 102 with different transmittances. Such semi-transmissive regions S2, S3, and S4 may be formed with photoresist patterns having different thicknesses after the development process by partially transmitting ultraviolet rays during the exposure process in the photoresist process.

  Specifically, the semi-transmissive regions S2, S3, and S4 include three or more semi-transmissive portions having different transmittances using at least two semi-transmissive materials. Here, the semi-transmissive regions S2, S3, and S4 are formed of a semi-transmissive material, for example, the first and second semi-transmissive materials 112 and 114, thereby forming three semi-transmissive portions having different transmittances. be able to.

  That is, the semi-transmissive regions S2, S3, and S4 are formed of the first semi-transmissive material 112, and are formed of the first semi-transmissive portion S3 that transmits X% of the irradiated light and the second semi-transmissive material 114, and the irradiation. A second semi-transmissive portion S4 that transmits Y% of the light to be transmitted, and a third semi-transmissive portion S2 that is formed by stacking the first and second semi-transmissive materials 112 and 114 and transmits the ultraviolet light by Z%. Can do. Here, each of X%, Y%, and Z% means a transmittance that transmits 10 to 90% of the irradiated light.

Here, the first and second semi-transparent materials 112 and 114 include Cr, Si, Mo, Ta, Ti, and Al as main elements, and a compound in which at least two of these main elements are bonded, or CO as a main element. _It is preferable to use a compound in which at least one of _x , O _x and N _x is bonded. The subscript is a natural number that varies depending on the main element to be bound.

As the composition of the first and second semi-transmissive materials 112 and 114, various materials that can pass only a part of the irradiated light of a predetermined wavelength band can be used. For example, the first and second translucent materials 112 and 114 may be Cr _x O _y , Cr _x CO _y , Cr _x O _y N _z , Si _x O _y , Si _x O _y N _z , Si _x CO _y , Si. _x CO _y N _z , Mo _x Si _y , Mo _x O _y , Mo _x O _y N _z , Mo _x CO _y , Mo _x O _y N _z , Mo _x Si _y O _z , Mo _x Si _y O _z N, _{Mo x Si y CO z N,} Mo x Si y CO z, Ta x O y, Ta x O y N z, Ta x CO y, Ta x O y N z, Al x O y, Al x CO y, Al _{x O y N z, Al x} CO y N z, Ti x O y, Ti x O y N z, may be formed by any one or combination of these Ti _x CO _y.

Most preferably, when the first semi-transmissive material 112 is formed of Cr _x O _y , Cr _x CO _y , Cr _x O _y N _z , the first semi-transmissive material 112 can be selectively etched with Cr among the semi-transmissive materials listed above. Two semi-permeable materials 114 can be used. That is, each of the first and second semi-permeable materials 112 and 114 must be formed of semi-permeable materials having different etching ratios from the semi-permeable materials listed above.

  On the other hand, as shown in FIG. 1, the semi-transmissive region can be formed to include first to third semi-transmissive portions having different transmittances, and the first to third semi-transmissive regions can be formed using a large number of semi-transmissive materials. An n transflective portion can be formed.

  The blocking region S1 blocks the ultraviolet rays during the exposure process, so that the photoresist pattern remains after the development process. Therefore, the blocking region S1 is formed on the substrate 102 in a form in which the blocking layer 110, the first semi-transmissive material 112, and the second semi-transmissive material 114 are sequentially stacked to block ultraviolet rays. Further, as shown in FIG. 11 showing the halftone mask 100 according to the second embodiment of the present invention, the blocking region S1 is formed on the substrate 102 with the first semi-transmitting material 112, the second semi-transmitting material 114, and the blocking region S1. The layer 110 may be formed in a stacked form. That is, the blocking layer 110 may have a bottom structure formed below the first and second semi-permeable materials 112 and 114, and the blocking layer 110 is formed above the first and second semi-permeable materials 112 and 114. A top structure may be used.

  A process of forming a halftone mask including the transmissive region S5, the blocking region S1, and the semi-transmissive regions S2, S3, and S4 will be described with reference to FIGS.

  2 to 10 are cross-sectional views illustrating a method of manufacturing the halftone mask according to the first embodiment of the present invention shown in FIG.

Referring to FIG. 2, a blocking layer 110 and a photoresist 120 are sequentially stacked on a substrate 102 using a sputtering method, a chemical vapor deposition method, or the like. The blocking layer 110 can be formed of a material capable of blocking ultraviolet rays, for example, can be formed of a film composed of Cr and Cr _x O _y .

  Referring to FIG. 3, the photoresist 120 formed at the position where the transmissive region S5 and the semi-transmissive regions S2, S3, and S4 are formed is drawn and then developed to expose the blocking layer 110.

  Specifically, the photoresist at the position where the transmissive region S5 and the semi-transmissive regions S2, S3, and S4 are formed is drawn by laser beam irradiation, and the drawn photoresist region is developed and removed. As a result, the photoresist 120 remains on the blocking layer 110 formed at the position where the blocking region S1 is formed, and the blocking layer 110 is formed at the position where the transmissive region S5 and the semi-transmissive regions S2, S3, S4 are formed. Exposed.

  Referring to FIG. 4, the exposed blocking layer 110 is removed by an etching process using the photoresist 120 left on the substrate 102 as a mask. As a result, the blocking layer 110 is left on the substrate 102 only at the position where the blocking area S1 is formed, and the blocking layer 110 is removed at the position where the transmitting area S5 and the semi-transmitting areas S2, S3, S4 are formed. Then, the substrate 102 is exposed.

  Referring to FIG. 5, a first semi-transmissive material 112 and a photoresist 120 are sequentially stacked on a substrate 102 on which a blocking layer 110 is formed by a sputtering method and a chemical vapor deposition method.

Specifically, the first semipermeable material 112 includes a compound in which Cr, Si, Mo, Ta, Ti, and Al are main elements and at least two of these main elements are bonded, or the main elements are CO _x , O _x. , N _x is preferably used. The subscript is a natural number that varies depending on the main element to be bound.

As the composition of the first semi-transmissive material 112, various materials that can transmit only a part of the irradiated light of a predetermined wavelength band can be used. In the present invention, Cr _x O _y , Cr _x CO _y , Cr _x O _y N _z , Si _x O _y , Si _x O _y N _z , Si _x CO _y , Si _x CO _y N _z , Mo _x Si _y , Mo _x O _y , Mo _x O _y N _z , Mo _x CO _y , Mo _x O _y N _z , Mo _x Si _y O _z , Mo _x Si _y O _z N, Mo _x Si _y CO _z N, Mo _x Si _{y CO z, Ta x O y} , Ta x O y N z, Ta x CO y, Ta x O y N z, Al x O y, Al x CO y, Al x O y N z, Al x CO y N The first semi-transmissive material 112 may be formed of any one of _z , Ti _x O _y , Ti _x O _y N _z , and Ti _x CO _y or a combination thereof. Most preferably, the first semipermeable material 112 is formed of Cr _x O _y , Cr _x CO _y , Cr _x O _y N _z . Here, the subscripts x, y, and z are natural numbers, meaning the number of each chemical element.

  Referring to FIG. 6, the photoresist 120 formed on the first translucent material 112 is drawn by laser beam irradiation, and the drawn photoresist 120 is developed to transmit the transmissive region S <b> 5 and the second semi-transmissive material. The first semipermeable material 112 is exposed at the position where the part S4 is formed.

  Referring to FIG. 7, the exposed first semi-transmissive material 112 is removed by an etching process using the photoresist 120 left on the first semi-transmissive material 112 as a mask. Accordingly, the blocking layer 110 and the first semi-transmissive material 112 are stacked at the position where the blocking region S1 is formed, and the position where the first and third semi-transmissive portions S3 and S2 are formed is on the substrate 102. A first semipermeable material 112 is formed.

  Referring to FIG. 8, a second semi-transmissive material 114 and a photoresist 120 are sequentially stacked on the substrate 102 on which the first semi-transmissive material 112 is formed by a sputtering method, a chemical vapor deposition method, or the like.

Specifically, the second translucent material 114 is a compound in which Cr, Si, Mo, Ta, Ti, and Al are main elements, and at least two of these main elements are bonded, or the main elements are CO _x , O _x , A compound having at least one N _x bonded thereto is preferred. The subscript is a natural number that varies depending on the main element to be bound.

As the composition of the second semi-transmissive material 114, various materials that can pass only a part of the irradiated light of a predetermined wavelength band can be used. In the present invention, Cr _x O _y , Cr _x CO _y , Cr _x O _y N _z , Si _x O _y , Si _x O _y N _z , Si _x CO _y , Si _x CO _y N _z , Mo _x Si _y , Mo _x O _y , Mo _x O _y N _z , Mo _x CO _y , Mo _x O _y N _z , Mo _x Si _y O _z , Mo _x Si _y O _z N, Mo _x Si _y CO _z N, Mo _x Si _{y CO z, Ta x O y} , Ta x O y N z, Ta x CO y, Ta x O y N z, Al x O y, Al x CO y, Al x O y N z, Al x CO y N The second semipermeable material can be formed of any one of _z , Ti _x O _y , Ti _x O _y N _z , and Ti _x CO _y or a combination thereof.

Most preferably, the first semi-transmissive material _{112 Cr x O y, Cr x} CO y, if formed by Cr _x O _y N _z, of the semi-transmission material listed above, of the above semi-transmission material A second translucent material 114 that can be selectively etched with Cr is used.

  As the second semipermeable material 114, a semipermeable material having an etching ratio different from that of the first semipermeable material 112 is used. That is, only the second semi-transmissive material 114 exposed as in the region A shown in FIG. 9 is etched, and the first semi-transmissive material 112 formed under the second semi-transmissive material 114 is not etched. For the semi-transmissive material 114, a semi-transmissive material having an etching ratio different from that of the first semi-transmissive material 112 is used.

  Referring to FIG. 9, a photoresist 120 is drawn at a position where the transmissive region S5 and the first semi-transmissive portion S3 are formed, and then developed to expose the second semi-transmissive material 114.

  Specifically, a photoresist 120 is drawn by laser beam irradiation at a position where the transmissive region S5 and the first semi-transmissive portion S3 are formed, and the drawn photoresist region is developed and removed. As a result, the photoresist 120 is left on the second semi-transmissive material 114 formed at the position where the blocking region S1, the second semi-transmissive portion S4, and the third semi-transmissive portion S2 are formed. The second semi-transmissive material 114 is exposed at the position where the first semi-transmissive portion S3 is formed.

  Referring to FIG. 10, the second semi-transmissive material 114 exposed at the position where the transmissive region S5 and the first semi-transmissive portion S3 are formed using the photoresist 120 left on the second semi-transmissive material 114 as a mask. , Removed by an etching process. Thereafter, the photoresist 120 remaining on the second semi-transmissive material 114 is removed by a strip process. As a result, a blocking region S1 in which the blocking layer 110, the first semi-transmitting material 112, and the second semi-transmitting material 114 are stacked is formed on the substrate 102, and the first semi-transmitting material 112 made of the first semi-transmitting material 112 is formed on the substrate 102. A semi-transmissive portion S3 is formed, a second semi-transmissive portion S4 made of the second semi-transmissive material 114 is formed on the substrate 102, and the first semi-transmissive material 112 and the second semi-transmissive material 114 are laminated on the substrate 102. A third semi-transmissive portion S2 is formed, and a transmissive region S5 where the substrate 102 is exposed is formed.

  12 to 20 are cross-sectional views showing a method of manufacturing a halftone mask according to the second embodiment of the present invention shown in FIG.

  Referring to FIG. 12, a first semi-transmissive material 112 and a photoresist 120 are sequentially stacked on a substrate 102 by sputtering, chemical vapor deposition, or the like.

Specifically, the first semi-permeable material 112 includes Cr, Si, Mo, Ta, Ti, and Al as main elements, and a compound in which at least two of these main elements are bonded, or CO _x , O _x , N in the main elements. A compound in which at least one of _x is bonded is preferable. The subscript is a natural number that varies depending on the main element to be bound.

As the composition of the first semi-transmissive material 112, various materials that can transmit only a part of the irradiated light of a predetermined wavelength band can be used. In the present invention, Cr _x O _y , Cr _x CO _y , Cr _x O _y N _z , Si _x O _y , Si _x O _y N _z , Si _x CO _y , Si _x CO _y N _z , Mo _x Si _y , Mo _x O _y , Mo _x O _y N _z , Mo _x CO _y , Mo _x O _y N _z , Mo _x Si _y O _z , Mo _x Si _y O _z N, Mo _x Si _y CO _z N, Mo _x Si _{y CO z, Ta x O y} , Ta x O y N z, Ta x CO y, Ta x O y N z, Al x O y, Al x CO y, Al x O y N z, Al x CO y N The first semi-transmissive material 112 can be formed of any one of _z , Ti _x O _y , Ti _x O _y N _z , and Ti _x CO _y , or a combination thereof. Most preferably, the first semipermeable material 112 is formed of Cr _x O _y , Cr _x CO _y , Cr _x O _y N _z . Here, the subscripts x, y, and z are natural numbers, meaning the number of each chemical element.

  Referring to FIG. 13, after the photoresist 120 formed on the first semi-transmissive material 112 is drawn by laser beam irradiation, the drawn photoresist 120 is developed to form the second semi-transmissive portion S4. The first translucent material 112 is exposed at the position.

  Referring to FIG. 14, the exposed first semi-transmissive material 112 is removed by an etching process using the photoresist 120 left on the substrate 102 as a mask. Accordingly, the substrate 102 is exposed by removing the first semi-transmissive material 112 at the position where the second semi-transmissive portion S4 is formed.

  Referring to FIG. 15, a second semi-transparent material and a photoresist are sequentially stacked on a substrate on which the first semi-transparent material is formed by a sputtering method and a chemical vapor deposition method.

Specifically, the second translucent material 114 is a compound in which Cr, Si, Mo, Ta, Ti, and Al are main elements, and at least two of these main elements are bonded, or the main elements are CO _x , O _x , A compound having at least one N _x bonded thereto is preferred. The subscript is a natural number that varies depending on the main element to be bound.

As the composition of the second semi-transmissive material 114, various materials that can pass only a part of the irradiated light of a predetermined wavelength band can be used. In the present invention, Cr _x O _y , Cr _x CO _y , Cr _x O _y N _z , Si _x O _y , Si _x O _y N _z , Si _x CO _y , Si _x CO _y N _z , Mo _x Si _y , Mo _x O _y , Mo _x O _y N _z , Mo _x CO _y , Mo _x O _y N _z , Mo _x Si _y O _z , Mo _x Si _y O _z N, Mo _x Si _y CO _z N, Mo _x Si _{y CO z, Ta x O y} , Ta x O y N z, Ta x CO y, Ta x O y N z, Al x O y, Al x CO y, Al x O y N z, Al x CO y N The second semipermeable material can be formed of any one of _z , Ti _x O _y , Ti _x O _y N _z , and Ti _x CO _y or a combination thereof.

Most preferably, when the first semi-transmissive material 112 is formed of Cr _x O _y , Cr _x CO _y , or Cr _x O _y N _z , the first semi-transmissive material 112 can be selectively etched with Cr among the semi-transmissive materials listed above. A second semi-permeable material 114 can be used.

  As the second semipermeable material 114, a semipermeable material having an etching ratio different from that of the first semipermeable material 112 is used. That is, only the second semi-transmissive material 114 exposed as in the region B shown in FIG. 16 is etched, and the first semi-transmissive material 112 formed under the second semi-transmissive material 114 is not etched. For the semi-transmissive material 114, a semi-transmissive material having an etching ratio different from that of the first semi-transmissive material 112 is used.

  Referring to FIG. 16, after the photoresist 120 formed on the second translucent material 114 is drawn by laser beam irradiation, the drawn photoresist 120 is developed, and the transmissive region S5 and the first semi-transmissive material are developed. The second semipermeable material 114 is exposed at the position where the part S3 is formed.

  Referring to FIG. 17, the second semi-transmissive material 114 is removed by an etching process using the photoresist 120 left on the second semi-transmissive material 114 as a mask. Accordingly, the first semi-transmissive portion S3 made of the first semi-permeable material 112, the second semi-transmissive portion S4 made of the second semi-permeable material 114, and the first and second semi-permeable materials 112 and 114 are laminated. A third semi-transmissive portion S2 is formed. The first semi-transmissive material 112 is formed at the position where the transmission region S5 is formed, and the first and second semi-permeable materials 112 and 114 are stacked at the position where the blocking region S1 is formed.

Referring to FIG. 18, a blocking layer 110 and a photoresist 120 are sequentially stacked on the substrate 102 on which the second translucent material 114 is formed by a sputtering method, a chemical vapor deposition method, or the like. The blocking layer 110 may be formed of a material that can block ultraviolet rays, and may be a film made of Cr and Cr _x O _y , for example.

  Referring to FIG. 19, after the photoresist 120 formed on the blocking layer 110 is drawn by laser beam irradiation, the drawn photoresist 120 is developed, so that the transflective regions S2, S3, S4 and the transmissive region are obtained. The blocking layer 110 is exposed at the position where S5 is formed.

  Referring to FIG. 20, the photoresist 120 left on the blocking layer 110 is used as a mask, and the blocking layer 110 exposed at the positions where the semi-transmissive regions S2, S3, S4 and the transmissive region S5 are formed is removed by an etching process. Is done. Thereafter, the photoresist 120 remaining on the blocking layer 110 is removed by a strip process. As a result, a blocking region S1 in which the first semi-transmitting material 112, the second semi-transmitting material 114, and the blocking layer 110 are stacked is formed on the substrate 102, and the first semi-transmitting material 112 is stacked on the substrate 102. The first semi-transmissive portion S3, the second semi-transmissive portion S4 in which the second semi-transmissive material 114 is laminated on the substrate 102, and the third semi-transmissive portion S2 in which the first and second semi-transmissive materials 112 and 114 are laminated. And a transmissive region S5 where the substrate 102 is exposed is formed.

  As described above, the halftone mask manufacturing method according to the first and second embodiments of the present invention can reduce the number of processes as shown in FIGS. 2 to 10 and FIGS. , Time and cost can be reduced.

  While the foregoing detailed description has described the invention with reference to the preferred embodiment of the invention, it should be understood that those skilled in the art or those having ordinary knowledge in the art will be It will be apparent that various modifications and changes may be made without departing from the spirit and scope of the invention as set forth in the appended claims.

102 Substrate 110 Blocking layer 112 First translucent material 114 Second translucent material 120 photoresist

Claims (13)

A substrate,
A transmission region formed on the substrate and transmitting light of a predetermined wavelength band to be irradiated;
A semi-transmission region having a multiple semi-transmission part that transmits light of a predetermined wavelength band irradiated on the substrate at two or more different transmittances using at least two semi-transmission substances;
The halftone mask characterized by including.   The halftone mask according to claim 1, further comprising a blocking region having a blocking layer formed on or under the at least two semi-transmissive materials.   The halftone mask of claim 1, further comprising a blocking region having a blocking layer formed between the at least two semi-transmissive materials. The translucent material is any of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO—Al ₂ O ₃ , or Si ₃ N ₄ . A single substance, a composite substance in which at least two of them are mixed, or at least one of CO _x , O _x , N _x , C _x , F _x , and B _x is added to the single substance or the composite substance. 2. The halftone mask according to claim 1, wherein the halftone mask is an added substance, wherein the subscript x is a natural number and means the number of each chemical element.   The halftone mask according to claim 1, wherein each of the at least two semi-transmissive materials is a semi-transmissive material having different etching ratios. Forming a blocking layer on the substrate on which the blocking region is formed;
Forming a semi-transmissive region having three or more semi-transmissive portions having different transmittances on at least two semi-transmissive materials on the substrate on which the blocking layer is formed;
Forming a blocking region in which the blocking layer and at least two semi-transmissive materials are stacked, and a transmitting region in which the substrate is exposed;
A method for producing a halftone mask, comprising: On the substrate on which the blocking layer is formed, the step of forming three or more semi-transmissive portions having different transmittances using at least two semi-transmissive materials includes:
A first semi-transmissive material and a photoresist are sequentially stacked on the blocking layer, and then the photoresist is exposed and developed so that a necessary region of the first semi-transmissive material is exposed. Removing the semipermeable material;
A second semi-transmissive material and a photoresist are sequentially stacked on the substrate on which the first semi-transmissive material is formed, and then the photoresist is exposed and developed so that a necessary region of the second semi-transmissive material is exposed. And removing the exposed second semipermeable material;
A first semi-transmissive portion in which a first semi-transmissive material is laminated on the substrate; a second semi-transmissive portion in which a second semi-transmissive material is laminated on the substrate; and the first and second on the substrate. Forming a third semi-transmissive portion on which the semi-permeable material is laminated;
The manufacturing method of the halftone mask of Claim 6 characterized by the above-mentioned.   8. The method of manufacturing a halftone mask according to claim 7, wherein materials having different etching ratios are used as the at least two semi-transmissive materials. The translucent material is any of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO—Al ₂ O ₃ , or Si ₃ N ₄ . A single substance, a composite substance in which at least two of them are mixed, or at least one of CO _x , O _x , N _x , C _x , F _x , and B _x is added to the single substance or the composite substance 9. The method of manufacturing a halftone mask according to claim 8, wherein the subscript x is a natural number and means the number of each chemical element. Forming a semi-transmissive region having multiple semi-transmissive portions having three or more different transmittances on at least two semi-transmissive materials on a substrate;
After sequentially stacking a blocking layer and a photoresist on the multiple semi-transmissive portion, the photoresist is exposed and developed so that a necessary region of the blocking layer is exposed, and the exposed photoresist is removed. Stages,
Forming a blocking region having a blocking layer formed on the at least two semi-transmissive materials, and forming a transmitting region from which the substrate is exposed;
A method for producing a halftone mask, comprising: On the substrate, using at least two semi-transmissive materials, forming a semi-transmissive region having multiple semi-transmissive portions having three or more different transmittances,
After the first semi-transmissive material and the photoresist are sequentially stacked on the substrate, the photoresist is exposed and developed so that a necessary region of the first semi-transmissive material is exposed, and the exposed first semi-transmissive material is exposed. Removing the permeate,
A second semi-transmissive material and a photoresist are sequentially stacked on the substrate on which the first semi-transmissive material is formed, and then the photoresist is exposed and exposed so that a necessary region of the second semi-transmissive material is exposed. Developing to remove the exposed second translucent material;
A first semi-transmissive portion in which a first semi-transmissive material is laminated on the substrate; a second semi-transmissive portion in which a second semi-transmissive material is laminated on the substrate; and the first and second on the substrate. Forming a third semi-transmissive portion on which the semi-permeable material is laminated;
The method for manufacturing a halftone mask according to claim 10, comprising:   The method of claim 11, wherein the at least two semi-transparent materials are materials having different etching ratios. The translucent material is any of Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO—Al ₂ O ₃ , or Si ₃ N ₄ . A single substance, a composite substance in which at least two of them are mixed, or at least one of CO _x , O _x , N _x , C _x , F _x , and B _x is added to the single substance or the composite substance The method for manufacturing a halftone mask according to claim 12, wherein the subscript x is a natural number and means the number of each chemical element.

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