CN102449736A - Half tone mask and manufacturing method of the same - Google Patents

Half tone mask and manufacturing method of the same Download PDF

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Publication number
CN102449736A
CN102449736A CN2010800233853A CN201080023385A CN102449736A CN 102449736 A CN102449736 A CN 102449736A CN 2010800233853 A CN2010800233853 A CN 2010800233853A CN 201080023385 A CN201080023385 A CN 201080023385A CN 102449736 A CN102449736 A CN 102449736A
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permeable materials
see
alternately laminated
tone mask
materials
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CN2010800233853A
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CN102449736B (en
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金武成
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)

Abstract

The present invention relates to a half tone mask and a manufacturing method of the same configured to reduce the number of half permeation materials having a multi half permeation part and the number of processes, thereby reducing the manufacturing cost, wherein the half tone mask comprises: a substrate; a transmissive area formed on the substrate for transmitting irradiated light of a predetermined wavelength; a half permeation area formed on the substrate with a plurality of layers alternatively stacked with two or more half permeation materials, and having a half permeation area formed with a multi half permeation part having a different transmittance according to the number of stacked half permeation materials, and a blocking area having a blocking layer formed at on a plurality of half permeation materials that are alternatively stacked.

Description

Half-tone mask and manufacturing approach thereof
Technical field
The present invention relates to a kind of half-tone mask and manufacturing approach thereof, be used for reducing formation a plurality of half through the number of half permeable material of portion and the number of process, thereby reduce manufacturing cost.
Background technology
Generally speaking, liquid crystal display (LCD) use electric field controls has the light transmission of the liquid crystal of dielectric anisotropy, thus display image.For this reason, LCD comprises and is used to the drive circuit that utilizes the LCD panel of liquid crystal cell matrix display image and be used to drive said LCD panel.A kind of existing LCD panel comprises color filter substrate and thin film transistor substrate, and these two kinds of substrates are together with each other, and has liquid crystal between wherein.
Said color filter substrate comprises black matrix, colored filter and ordinary electrode, and they sequentially are placed on the upper glass substrate.
Said thin film transistor substrate comprises thin-film transistor and pixel electrode, and they are provided for each unit on the glass substrate, and this unit is limited the grid line that crosses data wire.Said thin-film transistor will be applied to from the data-signal of data wire on the said pixel electrode according to the gate signal from grid line.The pixel electrode that is formed by transparency conducting layer provides data-signal from said thin-film transistor to drive liquid crystal.
Said thin film transistor substrate forms through many mask processes, and wherein, the process of formation source and drain electrode and semiconductor pattern is used single half-tone mask, to reduce the number of mask process.
Summary of the invention
Technical problem
At this moment, said half-tone mask comprises the Resistance that is used for block ultraviolet, the transmission area that makes half of ultraviolet light part transmission see through the district and ultraviolet light is seen through.Partly seeing through on the said half-tone mask distinguished and can be formed with a plurality of half through portions, and each partly sees through portion and has different transmissivities.
Half permeable material that use has different transmissivities forms said a plurality of half through portion.In other words, need have three and half of different half permeable materials sees through portion and forms the half-tone mask with three kinds of different transmissivities.
Formation method with half-tone mask of three kinds of different transmissivities can comprise: range upon range of the first half permeable materials; Make this first half permeable material patterning through carrying out photoetching and etching process; Range upon range of above that the second half permeable materials; Make this second half permeable material patterning through carrying out photoetching and etching process, range upon range of the 3 half permeable material makes the 3 half permeable material patterning through carrying out photoetching and etching process.
Therefore, the disadvantage that forms the conventional method of said half-tone mask is to have different half permeable materials a plurality of partly through portion with etching process with formation owing to must carry out some photoetching, so the number of process, time and manufacturing cost increase.
Technical scheme
Open the present invention to be avoiding above-mentioned unfavorable, and advantage of the present invention is, a kind of half-tone mask and manufacturing approach thereof are provided, and is used for reducing forming a plurality of half and seeing through number and the number of process of half permeable material of portion, thereby reduces manufacturing cost.
Of the present invention one total aspect, a kind of half-tone mask is provided, it comprises: substrate; Transmission area is formed in the said substrate radiant light with the transmission predetermined wavelength; And partly through distinguishing, be formed in the said substrate, have by the alternately laminated a plurality of layers of two or more half permeable materials, and partly through distinguishing a plurality of portions that partly see through that have different transmissivities according to the number of half range upon range of permeable material that are formed with.
In certain exemplary embodiment, said half-tone mask can also comprise the Resistance with barrier layer, and this barrier layer is formed on the upper surface or lower surface with alternately laminated multiple half permeable material.
In certain exemplary embodiment, said a plurality of numbers that partly can form according to lamination through portion have the light transmission difference of scope in 5%-80%.
In certain exemplary embodiment; Said half permeable material can comprise that Cr, Si, Mo, Ta, Ti and Al are as host element; Or comprise the usefulness composite composite material of two or more said elements at least, perhaps can be a kind of at least a material that in said host element, is added with among Cox, Ox, the Nx.
In certain exemplary embodiment, every kind of material in said two or more half permeable materials at least can form with half permeable material with different etching ratio.
In certain exemplary embodiment; Said half sees through the district can comprise that the first half see through portion, the second half and see through portion and the 3 half and see through portion; Said the first half see through that portion is alternately laminated to have the first half permeable materials and the second half permeable materials so that the transmitance of light reaches X%; Wherein, Said half sees through the district alternately forms with said the first half permeable materials and said the second half permeable materials, and said the second half have said the first half permeable materials and said the second half permeable materials so that the transmitance of light reaches Y%, wherein through portion is alternately laminated; Said the second half see through portion sees through portion than said the first half and has half less permeable material number; And the said the 3 half see through that portion is alternately laminated to have said the first half permeable materials and said the second half permeable materials so that the transmitance of light reaches Z%, and wherein, the said the 3 half sees through portion sees through portion than said the second half and have half less permeable material number.
Of the present invention another total aspect, a kind of manufacturing approach of half-tone mask comprises: in substrate with the alternately laminated multilayer of two or more half permeable materials at least; On said alternately laminated two or more half permeable material laminated barrier layers at least; Said alternately laminated two or more half permeable materials of etching have a plurality of half of differing heights with formation and see through portion step by step.
In certain exemplary embodiment, said a plurality of numbers that partly form according to half range upon range of permeable material through portion have the light transmission of scope at 5%-80%.
In certain exemplary embodiment; Two or more alternately laminated half permeable materials of said etching step by step comprise with a plurality of half steps through the unit that formation has differing heights: at the alternately laminated at least said barrier layer laminated photoresist that two or more half permeable materials are arranged, so that every layer photoetching glue all has table top; And utilize the said photoresist be formed with table top to make said barrier layer that mask order etching exposes and alternately laminated said two or more half permeable materials, so that said barrier layer and said half permeable material have mutually different height.
In certain exemplary embodiment, every kind half permeable material in said two or more half permeable materials at least all has different etching ratios.
In certain exemplary embodiment; Said half permeable material is a kind of with one of Cr, Si, Mo, Ta and Al material as host element; Or be a kind of usefulness composite composite material of two or more said elements at least, perhaps be a kind of at least a material that in said host element, is added with among Cox, Ox, the Nx.
Beneficial effect
The invention has the advantages that a kind of half sees through mask comprises that a plurality of half sees through portion, these a plurality of alternately laminated two and half permeable materials of portion that partly see through; And has different light transmission rates according to the stack height of this two and half permeable material; Make to this alternately laminated two and half permeable material etching step by step, forming different stack height, and form and have a plurality of half of different transmissivities and see through portions; Thus; Use at least two or more half permeable materials and form to have a plurality of half of different transmissivities and see through portion, thereby reduced the number of half permeable material and manufacture process through etching step by step, and owing to the minimizing of time and cost has increased productive rate.
Description of drawings
Fig. 1 is a cutaway view, shows the described half-tone mask of one exemplary embodiment of the present invention;
Fig. 2 is a cutaway view to Figure 12, shows the manufacture process of the described half-tone mask of exemplary embodiment among Fig. 1; And
Figure 13 is a cutaway view, shows the described half-tone mask of another exemplary embodiment of the present invention.
Embodiment
Describe configuration of the present invention and operation in detail below with reference to accompanying drawing.
Fig. 1 is a cutaway view, shows the described half-tone mask of one exemplary embodiment of the present invention.
Referring to Fig. 1, half-tone mask 100 comprises Resistance (S1) in the substrate 102, have a plurality of half sees through half of portions and sees through district (S3, S4, S5) and transmission area (S2).
Substrate 102 can be transparent substrates (for example, quartz), the radiant light that it can fully transmission predetermined band.Yet this substrate is not limited to quartz, can be any material that can printing opacity.
Half sees through district (S3, S4, S5) can wrap a plurality of half and see through portions, so that impinge upon the light of said suprabasil predetermined band with different transmissivity transmission each other.Half sees through district (S3, S4, S5) can be formed by the photoresist pattern, and through transmit ultraviolet light partly in the exposure process of photoresist processing procedure, after developing process, each photoresist pattern has different thickness.
More particularly, partly see through district (S3, S4, S5) and can comprise that a plurality of half sees through portions, each partly sees through portion, and two or more half permeable materials 112,114 have different transmissivities through using at least.In other words; Half sees through that district (S3, S4, S5) is alternately laminated to have two or more half permeable materials 112,114 at least; And, can form said a plurality of portions that partly see through that transmissivity has nothing in common with each other according to the said number of two or more half permeable materials 112,114 at least that alternately forms.
Below, come illustration half to see through district (S3, S4, S5) through a kind of situation, in this situation, the first and second half permeable materials 112,114 are alternately laminated 4 layers.
In other words; Half sees through district (S3, S4, S5) comprises that the first half see through portion (S3), the second half and see through portion (S4) and see through portion (S5) with the 3 half, the first half through portion (S3) at substrate 102 laminated the first half permeable materials 114, so that the optical transmission rate is up to X%; The second half see through portion (S4) at the first half permeable material 114 laminated, the second half permeable materials 112; So that the optical transmission rate is up to Y%, the 3 half sees through portion (S5) with the first half permeable materials 114 and the second half permeable materials 112 alternately laminated 3 layers, so that the optical transmission rate is up to Z%; Wherein, X%, Y% and Z% define the radiant light transmissivity of scope at 5%-80% respectively.In other words, can form a plurality of half and see through portion, so that have the different light transmission of scope at 5%-80% according to the number of layer laminate.
Here; The first and second half permeable materials 114,112 can be a kind of with one of Cr, Si, Mo, Ta, Ti, Al as the material of host element or with the composite composite material of two or more said elements at least; Or in said host element material or said composite material, add at least a material among Cox, Ox, the Nx; Wherein, x is a natural number, and it becomes along with the combination of element.
The composition of the first and second half permeable materials 114,112 can change, as long as the radiant light transmissive of part predetermined wavelength.In the present invention, the composition of the first and second half permeable materials 114,112, for example, the composition of said range upon range of half permeable material 114,112 can be from Cr xO y, Cr xCO y, Cr xO yN z, Si xO y, Si xO yN z, Si xCO y, Si xCO yN z, Mo xSi y, Mo xO y, Mo xO yN z, Mo xCO y, Mo xO yN z, Mo xSi yO z, Mo xSi yO zN, Mo xSi yCO zN, Mo xSi yCO z, Ta xO y, Ta xO yN z, Ta xCO y, Ta xO yN z, Al xO y, Al xCO y, Al xO yN z, Al xCO yN z, Ti xO y, Ti xO yN z, Ti xCO yArbitrary composition of selecting in the group or its composite parts, wherein, subscript x, y and z are natural numbers, define the number of every kind of chemical element.
Preferably, at the first and second half permeable materials 114,112 by Cr xO y, Cr xCO y, Cr xO yN zIn the situation that forms, can use the second half permeable materials 114 of the alternative etching that has Cr in said half permeable material of listing.In other words, each all must form the first and second half permeable materials 114,112 with half such permeable material, and each this half permeable material has different etching ratios in said half permeable material of listing.
As stated, through alternately forming a plurality of the first and second half permeable materials 114,112, can form first to m half and see through portion; Wherein, M is the natural number greater than 1, and each partly sees through portion can have different transmissivities according to the number of layer laminate, and this point can be explained with reference to Figure 13.
With reference to Figure 13; Half see through district (S3, S4, S5) can comprise with a plurality of the first half permeable materials 114 and a plurality of the second half permeable material 112 alternating layers build up the first half through portion (S3); So that light transmission is up to X%, wherein said half sees through the district with said the first half permeable materials and said the second half alternately formation of permeable material; The second half see through district (S4) with what said the first half permeable materials and said the second half permeable material alternating layers built up, so that light transmission is up to Y%, wherein, said the second half see through the district sees through the number that the district has half less permeable material than said the first half; The 3 half see through district (S5) with what said the first half permeable materials and said the second half permeable material alternating layers built up, so that light transmission is up to Y%, wherein, the said the 3 half sees through the district sees through the number that the district has half less permeable material than said the second half.
In other words, through alternately laminated two or more half permeable materials at least, half-tone mask can form to have a plurality of half and sees through portions, and each half sees through portion and have different transmissivities according to the number of layer laminate.
Through during exposure process, blocking ultraviolet light, after developing process, Resistance S1 is left the photoresist pattern.Finally, through making barrier layer be stacked on a plurality of the first half permeable materials 114 and a plurality of the second half permeable materials 112 Resistance S1 block ultraviolet.
Below with reference to Fig. 2 the forming process that comprises transmission area S2, Resistance S1 and partly see through the half-tone mask in district (S3, S4, S5) is described to Figure 12.
Fig. 2 is a cutaway view to Figure 12, shows the manufacture process of the described half-tone mask of exemplary embodiment among Fig. 1.
Although can form a plurality of layers through alternately laminated said the first and second half permeable materials, in this exemplary embodiment, with describing such situation, wherein, alternately laminated said the first and second half permeable materials are to form 4 layers.
Referring to Fig. 2, through sputter, chemical vapour deposition (CVD) etc., in substrate 102, replace range upon range of said the first and second half permeable materials 114,112, form 4 layers, subsequently sequential cascade barrier layer 110 and photoresist 120 above that.
More particularly; The first and second half permeable materials 114,112 can be a kind of with one of Cr, Si, Mo, Ta, Ti, Al as the material of host element or with the composite composite material of two or more said elements at least; Or in said host element material or said composite material, add at least a material among Cox, Ox, the Nx; Wherein, x is a natural number, and it becomes along with the combination of element.
The composition of the first and second half permeable materials 114,112 can change, as long as the radiant light transmissive of part predetermined wavelength.In the present invention, the composition of the first and second half permeable materials 114,112 can be from Cr xO y, Cr xCO y, Cr xO yN z, Si xO y, Si xO yN z, Si xCO y, Si xCO yN z, Mo xSi y, Mo xO y, Mo xO yN z, Mo xCO y, Mo xO yN z, Mo xSi yO z, Mo xSi yO zN, Mo xSi yCO zN, Mo xSi yCO z, Ta xO y, Ta xO yN z, Ta xCO y, Ta xO yN z, Al xO y, Al xCO y, Al xO yN z, Al xCO yN z, Ti xO y, Ti xO yN z, Ti xCO yArbitrary composition of selecting in the group or its composite parts.
Preferably, at the first and second half permeable materials 114,112 by Cr xO y, Cr xCO y, Cr xO yN zIn the situation that forms, can use the second half permeable materials 114 of the alternative etching that has Cr in said half permeable material of listing.In other words, each all must form the first and second half permeable materials 114,112 with half such permeable material, and each this half permeable material has different etching ratios in said half permeable material of listing.
In addition, barrier layer 110 can form with material that can block ultraviolet, and for example, Cr and Cr can be used in said barrier layer xO yThe film that forms forms.
Referring to Fig. 3; To being formed on after photoresist 120 on the barrier layer 110 portrays and develop; Can form the first and second photoresist pattern 120a, 120b, each photoresist pattern all has table top, and in the place that forms transmission area S2 is made public in the barrier layer.
More particularly, through regulating intensity of laser beam laser beam irradiation is formed the first and second photoresist pattern 120a, 120b to photoresist 120, each photoresist pattern has different thickness.The first photoresist pattern 120a is positioned at barrier layer S1, the first half and sees through the S3 of portion and the 3 half and see through the place that the S5 of portion should form, and the second photoresist pattern 120b is positioned at the second half and sees through the place that the S4 of portion should form.Expose barrier layer 110 in the place that transmission area S2 should form.
Referring to Fig. 4, use the first and second photoresist pattern 120a, the 120b stay on the barrier layer 110 to do barrier layer 110 that mask exposed and the first and second half permeable materials 114,112 are removed through etching process.
More particularly, expose substrate 102 through the etching process that barrier layer 110 and the first and second photoresist pattern 120a, the 120b that uses on said the first and second half permeable materials makes mask, thereby form transmission area S2.
Referring to Fig. 5, through using oxygen (O 2) etching process of plasma makes the first photoresist pattern 120a attenuation, and remove the second photoresist pattern 120b.In that to form transmissivity be that barrier layer 110 is exposed in the place that the second half of Y% sees through the S4 of portion through removing the second photoresist pattern 120b.
Referring to Fig. 6, utilize the first photoresist pattern 120a stay on the barrier layer 110 do mask through the etching process order remove form the 3 half see through the S5 of portion the barrier layer 110 of exposing, place, the second half permeable materials 112 and the first half permeable materials 114.So, formed the second half and seen through the S4 of portion, see through portion S4 place the second half, the first and second half permeable materials 114,112 are layered in the substrate 102.Subsequently, through knockout course, remove the first photoresist pattern 120a that stays in the substrate 102.
Referring to Fig. 7, see through and form photoresist 120 in the substrate 102 of the S4 of portion being formed with Resistance S1, transmission area S2 and the second half.After photoresist 120 being portrayed and is developed, form the first and second photoresist pattern 120a, 120b, each photoresist pattern all has table top.
More particularly, through regulating intensity of laser beam laser beam irradiation is formed the first and second photoresist pattern 120a, 120b to photoresist 120, each photoresist pattern has different thickness.The first photoresist pattern 120a is positioned at Resistance S1, transmission area S2 and the second half and sees through the place that the S4 of portion should form, and the second photoresist pattern 120b is positioned at the 3 half and sees through the place that the S5 of portion should form.See through the place that the S3 of portion should form the first half and expose barrier layer 110.
Referring to Fig. 8, utilize the first and second photoresist pattern 120a, 120b to expose barrier layer 110 as the mask in the substrate 102, remove the second half permeable materials 112 and the first half permeable materials 114 through the etching process order subsequently.So, see through place that the S3 of portion should form the first half and stay the first and second half permeable materials 114,112.
Referring to Fig. 9, through using oxygen (O 2) etching process of plasma makes the first photoresist pattern 120a attenuation, and remove the second photoresist pattern 120b.Be that barrier layer 110 is exposed in the place that the 3 half of Z% sees through the S5 of portion through removing second photoresist pattern 120b formation light transmission.
Referring to Figure 10, will use the first photoresist pattern 120a to remove through etching process as the barrier layer 110 that the mask in the substrate 102 exposes, remove the second half permeable materials 112 then, shown in figure 11.
Then referring to Figure 12, remove the first photoresist 120a that stays in the substrate 102 through knockout course, have a plurality of half half-tone masks through portion with formation, each partly sees through portion and has different transmissivities.So transmission area S2 exposes substrate 102 so that the transmittance that shines in the substrate 102 is gone over, and the first and second half permeable materials 114,112 replace range upon range of 4 layers in substrate 102, are formed with barrier layer 110 above that, thereby form Resistance S1.
In addition; Have different half the seeing through half of portion and see through the district and be formed with the first half and see through the S3 of portion, the second half and see through the S4 of portion and the 3 half and see through the S5 of portion of a plurality of transmissivities; The first half see through the S3 of portion through having the transmissivity of X% at said substrate laminated the first half permeable materials; The second half see through the S4 of portion through having the transmissivity of Y% at said substrate laminated the first and second half permeable materials 114,112, and the 3 half sees through the S5 of portion replaces range upon range of 3 layers the first and second half permeable materials 114,112 and have the transmissivity of Z% in said substrate.
As stated; The first and second half permeable materials 114,112 can through form said half permeable material of multilayer (every kind half permeable material have different etchings than) afterwards gradually step by step etching process form a plurality of half and see through portions, each half sees through portion and has different transmissivities.
In other words, through only use said the first and second half permeable materials to provide to have a plurality of half see through portion half-tone masks, each half sees through portion and has different transmissivities.
Simultaneously; Although this exemplary embodiment described use said the first and second half permeable materials only form said first, second with the 3 half see through portion method, can form according to the number of the layer laminate of said the first and second half permeable materials and a plurality ofly to have half of different transmitances and see through portions.
In addition, except said the first and second half permeable materials, also through range upon range of and etching first to n half permeable material step by step, can form and have first to m half and see through a plurality of half of portion and see through portions, wherein, n and m are the natural numbers greater than 1.
Industrial applicibility
The practicality of the present invention in industry is; Half sees through mask comprises that a plurality of half sees through portion; This a plurality of half sees through alternately laminated two and half permeable materials of portion, and has different light transmission rates according to the stack height of this two and half permeable material, makes to this alternately laminated two and half permeable material etching step by step; To form different stack height; And form and to have a plurality of half of different transmissivities and see through portions, thus, use at least two or more half permeable materials and form to have a plurality of half of different transmissivities and see through portions through etching step by step; Thereby reduced the number of half permeable material and manufacture process, and because the minimizing of time and cost has increased productive rate.

Claims (11)

1. a half-tone mask comprises: substrate; Transmission area is formed in the said substrate radiant light with the transmission predetermined wavelength; And partly through distinguishing, be formed in the said substrate, have by the alternately laminated a plurality of layers of two or more half permeable materials, and partly through distinguishing a plurality of portions that partly see through that have different transmissivities according to the number of half range upon range of permeable material that are formed with.
2. half-tone mask according to claim 1, wherein, this half-tone mask also comprises the Resistance with barrier layer, this barrier layer is formed on the upper surface or lower surface of alternately laminated multiple half permeable material.
3. half-tone mask according to claim 1, wherein, said a plurality of numbers that partly form according to lamination through portion have the light transmission difference of scope in 5%-80%.
4. half-tone mask according to claim 1, wherein, said half permeable material comprises with Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al 2O 3Or Si 3N 4One of as principal component or with the composite composite material of two or more said elements at least; Perhaps comprise at least a single said principal component or the said composite material that are added with among Cox, Ox, Nx, Cx, Fx and the Bx; Wherein, Subscript x is a natural number, defines the number of every kind of chemical element.
5. half-tone mask according to claim 1, wherein, every kind of material tool in said two or more half permeable materials at least has half permeable material of different etching ratio to form.
6. half-tone mask according to claim 1; Wherein, Said half sees through the district comprises that the first half see through portion, the second half and see through portion and the 3 half and see through portion; Said the first half see through that portion is alternately laminated to have the first half permeable materials and the second half permeable materials so that the transmitance of light reaches X%, and wherein, said half sees through the district with said the first half permeable materials and said the second half alternately formation of permeable material; Said the second half see through that portion is alternately laminated to have said the first half permeable materials and said the second half permeable materials so that the transmitance of light reaches Y%; Wherein, said the second half see through portion sees through portion than said the first half and has half permeable material number still less, and the said the 3 half sees through that portion is alternately laminated to have said the first half permeable materials and said the second half permeable materials so that the transmitance of light reaches Z%; Wherein, the said the 3 half see through portion and see through portion than said the second half and have half permeable material number still less.
7. the manufacturing approach of a half-tone mask comprises: in substrate, use the alternately laminated multilayer of two or more half permeable materials at least; On said alternately laminated two or more half permeable material laminated barrier layers at least; Said two or more alternately laminated half permeable materials of etching have a plurality of half of differing heights with formation and see through portion step by step.
8. method according to claim 7, wherein, said a plurality of numbers that partly form according to half range upon range of permeable material through portion have the light transmission of scope at 5%-80%.
9. method according to claim 7; Wherein, Two or more alternately laminated half permeable materials of said etching step by step comprise with a plurality of half steps through the unit that formation has differing heights: at the alternately laminated at least said barrier layer laminated photoresist that two or more half permeable materials are arranged, so that every layer photoetching glue all has table top; And utilize the said photoresist be formed with table top to make said barrier layer that mask order etching exposes and alternately laminated said two or more half permeable materials, so that said barrier layer and said half permeable material have mutually different height.
10. method according to claim 7, wherein, every kind half permeable material in said two or more half permeable materials at least all has different etching ratios.
11. method according to claim 7, wherein, said half permeable material comprises with Cr, Si, Mo, Ta, Ti, Al, Zr, Sn, Zn, In, Mg, Hf, V, Nd, Ge, MgO-Al 2O 3Or Si 3N 4One of as principal component or with the composite composite material of two or more said elements at least; Perhaps comprise at least a single said principal component or the said composite material that are added with among Cox, Ox, Nx, Cx, Fx and the Bx; Wherein, Subscript x is a natural number, defines the number of every kind of chemical element.
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WO2010137856A2 (en) 2010-12-02
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WO2010137856A3 (en) 2011-03-03
JP5336655B2 (en) 2013-11-06

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