KR101095539B1 - 하프톤 마스크 및 이의 제조 방법 - Google Patents

하프톤 마스크 및 이의 제조 방법 Download PDF

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Publication number
KR101095539B1
KR101095539B1 KR1020090045847A KR20090045847A KR101095539B1 KR 101095539 B1 KR101095539 B1 KR 101095539B1 KR 1020090045847 A KR1020090045847 A KR 1020090045847A KR 20090045847 A KR20090045847 A KR 20090045847A KR 101095539 B1 KR101095539 B1 KR 101095539B1
Authority
KR
South Korea
Prior art keywords
transflective
substrate
semi
photoresist
transmissive
Prior art date
Application number
KR1020090045847A
Other languages
English (en)
Korean (ko)
Other versions
KR20100127412A (ko
Inventor
김무성
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020090045847A priority Critical patent/KR101095539B1/ko
Priority to CN201080023383.4A priority patent/CN102449735B/zh
Priority to PCT/KR2010/003307 priority patent/WO2010137857A2/en
Priority to JP2012512963A priority patent/JP5654577B2/ja
Priority to TW099116829A priority patent/TWI434134B/zh
Publication of KR20100127412A publication Critical patent/KR20100127412A/ko
Application granted granted Critical
Publication of KR101095539B1 publication Critical patent/KR101095539B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
KR1020090045847A 2009-05-26 2009-05-26 하프톤 마스크 및 이의 제조 방법 KR101095539B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020090045847A KR101095539B1 (ko) 2009-05-26 2009-05-26 하프톤 마스크 및 이의 제조 방법
CN201080023383.4A CN102449735B (zh) 2009-05-26 2010-05-26 半色调掩模及其制造方法
PCT/KR2010/003307 WO2010137857A2 (en) 2009-05-26 2010-05-26 Half tone mask and manufacturing method of the same
JP2012512963A JP5654577B2 (ja) 2009-05-26 2010-05-26 ハーフトーンマスク及びその製造方法
TW099116829A TWI434134B (zh) 2009-05-26 2010-05-26 半調式光罩及其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090045847A KR101095539B1 (ko) 2009-05-26 2009-05-26 하프톤 마스크 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
KR20100127412A KR20100127412A (ko) 2010-12-06
KR101095539B1 true KR101095539B1 (ko) 2011-12-19

Family

ID=43223233

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090045847A KR101095539B1 (ko) 2009-05-26 2009-05-26 하프톤 마스크 및 이의 제조 방법

Country Status (5)

Country Link
JP (1) JP5654577B2 (zh)
KR (1) KR101095539B1 (zh)
CN (1) CN102449735B (zh)
TW (1) TWI434134B (zh)
WO (1) WO2010137857A2 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0161389B1 (ko) * 1995-02-16 1999-01-15 윤종용 마스크 및 이를 사용한 패턴형성방법
US5914202A (en) * 1996-06-10 1999-06-22 Sharp Microeletronics Technology, Inc. Method for forming a multi-level reticle
GB0229228D0 (en) * 2002-12-14 2003-01-22 Koninkl Philips Electronics Nv Manufacture of shaped structures in LCD cells,and masks therefor
WO2004055580A1 (en) * 2002-12-14 2004-07-01 Koninklijke Philips Electronics N.V. Manufacture of shaped structures in lcd cells, and masks therefor
JP4933753B2 (ja) * 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
KR100787090B1 (ko) * 2006-03-31 2007-12-21 엘지마이크론 주식회사 다중 반투과부를 구비한 하프톤 마스크 및 그 제조 방법
KR101255616B1 (ko) * 2006-07-28 2013-04-16 삼성디스플레이 주식회사 다중톤 광마스크, 이의 제조방법 및 이를 이용한박막트랜지스터 기판의 제조방법
JP5105407B2 (ja) * 2007-03-30 2012-12-26 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
JP5239591B2 (ja) * 2007-07-30 2013-07-17 大日本印刷株式会社 階調マスクおよびその製造方法
JP4934237B2 (ja) * 2007-09-29 2012-05-16 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法

Also Published As

Publication number Publication date
WO2010137857A2 (en) 2010-12-02
TWI434134B (zh) 2014-04-11
JP2012528354A (ja) 2012-11-12
JP5654577B2 (ja) 2015-01-14
CN102449735A (zh) 2012-05-09
WO2010137857A3 (en) 2011-03-03
CN102449735B (zh) 2016-01-20
TW201107877A (en) 2011-03-01
KR20100127412A (ko) 2010-12-06

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