WO2010134550A1 - 光学素子の製造方法 - Google Patents

光学素子の製造方法 Download PDF

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Publication number
WO2010134550A1
WO2010134550A1 PCT/JP2010/058463 JP2010058463W WO2010134550A1 WO 2010134550 A1 WO2010134550 A1 WO 2010134550A1 JP 2010058463 W JP2010058463 W JP 2010058463W WO 2010134550 A1 WO2010134550 A1 WO 2010134550A1
Authority
WO
WIPO (PCT)
Prior art keywords
ink
partition
resin composition
partition wall
photosensitive resin
Prior art date
Application number
PCT/JP2010/058463
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
秀幸 高橋
健二 石関
正行 川島
Original Assignee
旭硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 旭硝子株式会社 filed Critical 旭硝子株式会社
Priority to CN2010800225838A priority Critical patent/CN102428395A/zh
Priority to JP2011514436A priority patent/JPWO2010134550A1/ja
Publication of WO2010134550A1 publication Critical patent/WO2010134550A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00278—Lenticular sheets
    • B29D11/00298—Producing lens arrays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00634—Production of filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/09—Ink jet technology used for manufacturing optical filters

Definitions

  • the photopolymerization initiator contained in the negative photosensitive resin composition is not particularly limited as long as it is a compound having a function as a photopolymerization initiator, but comprises a compound that generates radicals by light. Is preferred. Specific examples include ⁇ -diketones, acyloins, acyloin ethers, thioxanthones, acetophenones, quinones, benzophenones, aminobenzoic acids, halogen compounds, peroxides, and oxime esters.
  • the polymer used as the ink repellent agent preferably has at least one acidic group selected from the group consisting of an acidic group, for example, a carboxyl group, a phenolic hydroxyl group, and a sulfonic acid group.
  • an acidic group for example, a carboxyl group, a phenolic hydroxyl group, and a sulfonic acid group.
  • the acid value of the polymer is preferably 10 to 400 mgKOH / g, more preferably 20 to 300 mgKOH / g.
  • JP-A 2005-315984 describes the above-mentioned polymer having a fluoroalkyl group and silicone.
  • JP-A 2005-300759 discloses an ink repellent agent combined with a polymer having a chain.
  • the photosensitive resin composition used in the production method of the present invention includes, as appropriate, for each type of the photosensitive resin composition, in addition to the various components described above. Radical crosslinking agent and thermal crosslinking agent to increase the crosslinking density of the cured film, silane coupling agent to obtain substrate adhesion, curing accelerator, thickener, plasticizer, antifoaming agent, leveling agent, A repellency inhibitor, an ultraviolet absorber and the like can be blended.
  • hexamethylol melamine and alkyl etherified hexamethylol melamine (hexamethoxymethyl melamine, butyl etherified hexamethylol melamine, etc.), partially methylolated melamine and its alkyl etherated product, tetramethylol benzoguanamine and alkyl etherified tetramethylol benzoguanamine A partially methylolated benzoguanamine and an alkyl etherated product thereof; and the like.
  • C-2 An ink repellent agent or a coating liquid containing an ink repellent agent is applied onto a temporary support different from the support substrate, and dried as necessary to form a layer containing the ink repellent agent.
  • the ink repellent agent or the coating liquid containing the ink repellent agent may or may not have photosensitivity. After laminating a support substrate on which a partition made of a resin composition is formed and a temporary support on which the layer containing the ink repellent agent is formed, the temporary support is peeled off to form an ink-repellent partition on the support substrate.
  • the ink repellent agent used in this method can be the same ink repellent agent as used in the method (A).
  • a method disclosed in Japanese Patent Application Laid-Open No. 2008-139378 is given as a more specific example of the method C-2.
  • Such a value of H1 ((2) height of the partition wall after the first heating step) may be appropriately set in consideration of the type of device in which the partition wall is used, the formability of the partition wall, and the like.
  • the value of H1 is generally in the range of 0.2 to 15 ⁇ m, the preferred range is 0.4 to 8 ⁇ m, the particularly preferred range is 2 to 6 ⁇ m, and the most preferred range is 2.3 to 4.5 ⁇ m. is there.
  • the partition wall after the above (2) first heating step has sufficient solvent resistance, ensures sufficient ink repellency on the upper surface, and has a high film thickness and the parent of the region other than the upper layer on the side surface.
  • the ink property is ensured, and it is possible to form a uniform ink layer without causing problems such as ink color mixing due to overflow in ink injection by the ink jet method.
  • a portion where the ink layer is formed on the main surface of the support substrate may be subjected to an ink affinity treatment as necessary.
  • the ink jet (IJ) step can be performed in the same manner as a normal method using an ink jet apparatus generally used in the ink jet method.
  • the ink jet device used for forming such an ink layer is not particularly limited, but a method in which charged ink is continuously ejected and controlled by a magnetic field, and ink is ejected intermittently using a piezoelectric element.
  • Ink jet apparatuses using various methods such as a method of heating and a method of heating ink and intermittently ejecting the ink by using the bubbling can be used.
  • the partition wall made of a cured resin product has a width (average value) of preferably 100 ⁇ m or less, more preferably 50 ⁇ m or less, depending on the type of optical element.
  • the distance between adjacent partition walls, that is, the width (average value) of the openings (dots) is preferably 1000 ⁇ m or less, and more preferably 500 ⁇ m or less.
  • the height of the partition wall, that is, the above-mentioned H2 (average value) is preferably 0.05 to 50 ⁇ m, more preferably 0.2 to 10 ⁇ m, and most preferably 0.5 to 5 ⁇ m.
  • the uniformity of the pixel has the following value by the following evaluation method. That is, as shown in FIG. 2, the average film at the four portions (positions y1 to y4 shown in FIG. 2B) at the partition wall of the ink layer formed in the dots through the IJ process and the second heating process.
  • the thickness (M) and the film thickness (N) at the center (position x in FIG. 2B) are measured, and the average film thickness (M) of the four portions at the partition wall relative to the film thickness (N) at the center.
  • the percentage, that is, M / N ⁇ 100 is preferably 70 to 150, and more preferably 75 to 120.
  • Copolymer 1 had a number average molecular weight of 25980 and a weight average molecular weight of 64,000.
  • the number average molecular weight and the weight average molecular weight were measured by gel permeation chromatography using polystyrene as a standard substance.
  • the number average molecular weight and the weight average molecular weight of each compound (polymer) are all measured by the same method.
  • the fact that there is no overflow also contributes to increasing the degree of freedom in ink preparation. That is, as the ink applied to the opening, various types such as a composition and a solid content are selected depending on the type of the optical element. Therefore, even when an ink having a low solid content concentration is used, according to the manufacturing method of the present invention, an optical element can be manufactured without overflow of the ink.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Ophthalmology & Optometry (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electroluminescent Light Sources (AREA)
  • Materials For Photolithography (AREA)
  • Optical Filters (AREA)
  • Thin Film Transistor (AREA)
PCT/JP2010/058463 2009-05-20 2010-05-19 光学素子の製造方法 WO2010134550A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010800225838A CN102428395A (zh) 2009-05-20 2010-05-19 光学元件的制造方法
JP2011514436A JPWO2010134550A1 (ja) 2009-05-20 2010-05-19 光学素子の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009122149 2009-05-20
JP2009-122149 2009-05-20

Publications (1)

Publication Number Publication Date
WO2010134550A1 true WO2010134550A1 (ja) 2010-11-25

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JP (1) JPWO2010134550A1 (ko)
KR (1) KR20120022903A (ko)
CN (1) CN102428395A (ko)
TW (1) TW201106027A (ko)
WO (1) WO2010134550A1 (ko)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012110840A (ja) * 2010-11-25 2012-06-14 Seiko Epson Corp 液状体吐出方法、及びカラーフィルターの製造方法
CN103460131A (zh) * 2011-03-30 2013-12-18 日立化成株式会社 感光性树脂组合物、使用了其的感光性元件、图像显示装置的隔壁的形成方法及图像显示装置的制造方法
WO2014084279A1 (ja) * 2012-11-28 2014-06-05 旭硝子株式会社 ネガ型感光性樹脂組成物、樹脂硬化膜、隔壁及び光学素子
CN103941482A (zh) * 2014-04-18 2014-07-23 京东方科技集团股份有限公司 制作隔垫物的装置及方法、基板和显示装置
JP2018092788A (ja) * 2016-12-02 2018-06-14 株式会社Ｊｏｌｅｄ 有機ｅｌ表示パネルの製造方法、有機ｅｌ表示パネル製造用基板、及び有機ｅｌ表示パネルの製造におけるノズルの検査方法
JP2018112674A (ja) * 2017-01-12 2018-07-19 株式会社ニコン パターン形成方法
JP2019046790A (ja) * 2017-09-05 2019-03-22 Jsr株式会社 表示素子形成用感光性組成物、硬化膜および表示素子
CN112368611A (zh) * 2018-07-05 2021-02-12 东丽株式会社 树脂组合物、遮光膜、遮光膜的制造方法及带隔壁的基板

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TWI494618B (zh) * 2011-08-12 2015-08-01 Au Optronics Corp 彩色濾光陣列及其製造方法
CN102736310B (zh) * 2012-05-30 2015-04-22 深圳市华星光电技术有限公司 彩色滤光片的制作方法
CN105445996A (zh) * 2015-12-29 2016-03-30 昆山龙腾光电有限公司 彩色滤光片基板的制造方法及彩色滤光片基板
CN105826355B (zh) * 2016-05-03 2017-03-08 京东方科技集团股份有限公司 一种显示面板的制作方法
CN105867008B (zh) * 2016-06-02 2019-07-09 京东方科技集团股份有限公司 彩膜基板及彩膜基板的制备方法、显示面板
US10336102B2 (en) * 2017-04-04 2019-07-02 Align Technology, Inc. Method of inkjet printing onto aligners

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JP2002156520A (ja) * 2000-11-22 2002-05-31 Canon Inc カラーフィルタとその製造方法、該カラーフィルタを用いた液晶素子
WO2007148689A1 (ja) * 2006-06-20 2007-12-27 Toppan Printing Co. , Ltd. 隔壁パターン付き基板およびその製造方法
JP2008250188A (ja) * 2007-03-30 2008-10-16 Fujifilm Corp カラーフィルタ用インクジェットインク、カラーフィルタ及びその製造方法並びに表示装置
JP2010185938A (ja) * 2009-02-10 2010-08-26 Asahi Glass Co Ltd 光学素子の製造方法

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CN1195998C (zh) * 2002-01-11 2005-04-06 财团法人工业技术研究院 微流体制造彩色滤光片的方法
CN101194191A (zh) * 2005-04-15 2008-06-04 富士胶片株式会社 滤色片的制造方法、滤色片、液晶显示元件、液晶显示装置
WO2007061115A1 (ja) * 2005-11-28 2007-05-31 Asahi Glass Company, Limited 隔壁、カラーフィルタ、有機ｅｌの製造方法
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JP2002156520A (ja) * 2000-11-22 2002-05-31 Canon Inc カラーフィルタとその製造方法、該カラーフィルタを用いた液晶素子
WO2007148689A1 (ja) * 2006-06-20 2007-12-27 Toppan Printing Co. , Ltd. 隔壁パターン付き基板およびその製造方法
JP2008250188A (ja) * 2007-03-30 2008-10-16 Fujifilm Corp カラーフィルタ用インクジェットインク、カラーフィルタ及びその製造方法並びに表示装置
JP2010185938A (ja) * 2009-02-10 2010-08-26 Asahi Glass Co Ltd 光学素子の製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012110840A (ja) * 2010-11-25 2012-06-14 Seiko Epson Corp 液状体吐出方法、及びカラーフィルターの製造方法
US9482946B2 (en) 2011-03-30 2016-11-01 Hitachi Chemical Company, Ltd. Photosensitive resin composition, photosensitive element using same, method for forming partition wall of image display device, and method for manufacturing image display device
CN103460131A (zh) * 2011-03-30 2013-12-18 日立化成株式会社 感光性树脂组合物、使用了其的感光性元件、图像显示装置的隔壁的形成方法及图像显示装置的制造方法
WO2014084279A1 (ja) * 2012-11-28 2014-06-05 旭硝子株式会社 ネガ型感光性樹脂組成物、樹脂硬化膜、隔壁及び光学素子
US9841677B2 (en) 2012-11-28 2017-12-12 Asahi Glass Company, Limited Negative photosensitive resin composition, cured resin film, partition walls and optical element
CN103941482A (zh) * 2014-04-18 2014-07-23 京东方科技集团股份有限公司 制作隔垫物的装置及方法、基板和显示装置
CN103941482B (zh) * 2014-04-18 2016-06-22 京东方科技集团股份有限公司 制作隔垫物的装置及方法、基板和显示装置
JP2018092788A (ja) * 2016-12-02 2018-06-14 株式会社Ｊｏｌｅｄ 有機ｅｌ表示パネルの製造方法、有機ｅｌ表示パネル製造用基板、及び有機ｅｌ表示パネルの製造におけるノズルの検査方法
JP2018112674A (ja) * 2017-01-12 2018-07-19 株式会社ニコン パターン形成方法
JP2019046790A (ja) * 2017-09-05 2019-03-22 Jsr株式会社 表示素子形成用感光性組成物、硬化膜および表示素子
JP7047642B2 (ja) 2017-09-05 2022-04-05 Jsr株式会社 隔壁形成用感光性組成物、隔壁および表示素子
CN112368611A (zh) * 2018-07-05 2021-02-12 东丽株式会社 树脂组合物、遮光膜、遮光膜的制造方法及带隔壁的基板
CN112368611B (zh) * 2018-07-05 2022-11-22 东丽株式会社 树脂组合物、遮光膜、遮光膜的制造方法及带隔壁的基板

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Publication number Publication date
KR20120022903A (ko) 2012-03-12
CN102428395A (zh) 2012-04-25
JPWO2010134550A1 (ja) 2012-11-12
TW201106027A (en) 2011-02-16

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