WO2010101236A1 - バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法 - Google Patents
バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法 Download PDFInfo
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- WO2010101236A1 WO2010101236A1 PCT/JP2010/053615 JP2010053615W WO2010101236A1 WO 2010101236 A1 WO2010101236 A1 WO 2010101236A1 JP 2010053615 W JP2010053615 W JP 2010053615W WO 2010101236 A1 WO2010101236 A1 WO 2010101236A1
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- Prior art keywords
- bump
- layer
- bump layer
- conductive metal
- substrate
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Definitions
- the present invention relates to a bump formed on a semiconductor chip or the like and a method for forming the bump. Specifically, the present invention relates to a bump manufactured using a metal paste, which can compensate for its flatness and does not require excessive pressure during mounting.
- the flip chip method is increasingly applied as a mounting method.
- the electrodes (bumps) formed on the substrate are directly bonded to the circuit board, but as a method for forming the bumps, a plating method is mainly used.
- the plating method can stably produce dense electrodes, and can control the film thickness (bump height) and form a fine pattern by setting appropriate conditions.
- the condition settings are adjusted, it is difficult to form a completely uniform film thickness, and it cannot be avoided that the bump height slightly varies. If the bump height varies, bumps that cause poor contact occur during mounting.
- Patent Document 1 discloses a method in which a resin is coated on the surface of a substrate after bump formation, and this is ground until the bumps are exposed to flatten the bumps. As a result, conduction stability is ensured, and mounting at a low pressure is possible, so there is no risk of residual distortion in the bumps.
- the applicant of the present application has proposed a method for solving the problem of the plating bump from a viewpoint different from the above (Patent Document 2).
- the bump configuration is changed, and a metal powder having a predetermined particle diameter and purity is sintered to form the bump.
- the bump made of this sintered body is more porous and relatively soft and elastic than a dense bulk metal formed by plating or the like.
- the present invention has been made based on the background as described above, and is a bump on a substrate used in the flip chip method, which can solve the problem due to the variation in bump height, and this. It is an object of the present invention to provide a method for mounting a used substrate.
- the present inventors have intensively studied to solve the above-mentioned problems, and as a new bump structure, a layer made of a bulk metal for securing the rigidity of the bump and a bump height variation absorption It has been found that a two-layer structure composed of a sintered body is used. That is, the present invention is a bulk body of a first conductive metal that is formed on a substrate in a predetermined pattern and is made of a conductive metal, and is formed on the substrate and is one of gold, copper, and nickel. And a second bump layer formed on the first bump layer and made of a sintered body of a second conductive metal powder that is either gold or silver.
- a bulk body having a structure and constituting the first bump layer is formed by any one of a plating method, a sputtering method, and a CVD method,
- the sintered body constituting the second bump layer sinters metal powder made of a second conductive metal having a purity of 99.9% by weight or more and an average particle diameter of 0.005 ⁇ m to 1.0 ⁇ m.
- the Young's modulus of the second bump layer is 0.1 to 0.4 times the Young's modulus of the first bump layer.
- the bulk metal is used as the main part of the bump while paying attention to the elasticity of the bump made of the sintered body by the applicant as described above, and this is arranged at the tip of the bump.
- the rigidity of the bump according to the present invention is secured by the first bump layer, and the pitch can be maintained by suppressing the deformation of the bump in the lateral direction at the time of flip chip bonding.
- the upper second bump layer has elasticity, it can be deformed following the variation in bump height, so that it is possible to bond with good flatness at low pressure.
- the first bump layer is a dense bulk metal having rigidity, and is formed by any one of a plating method, a sputtering method, and a CVD method.
- the second bump layer made of a sintered body formed on the first bump layer has a purity of 99.9% by weight or more and an average particle size of 0.005 ⁇ m to 1.0 ⁇ m.
- the metal powder which consists of 2 electroconductive metals is sintered. The reason why the purity of the metal powder is set to a high purity of 99.9% by weight or more is that when the purity is low, the hardness of the powder increases, and it becomes difficult to plastically deform and the elasticity is lowered.
- the average particle size of the metal powder is because it becomes difficult to sinter with metal powder having a particle size exceeding 1.0 ⁇ m, and the lower limit is set to 0.005 ⁇ m in consideration of its handleability. It is.
- the second bump layer needs to have a Young's modulus lower than that of the first bump layer.
- the Young's modulus of the second bump layer is 0.1 to 0.4 times the Young's modulus of the first bump layer. If it is less than 0.1 times, the second bump layer is too soft and deformation at the time of joining may cause a problem in the shape of the bump. If it exceeds 0.4 times, the first bump layer is deformed. This is because there is a risk of occurrence.
- the first and second conductive metals constituting the first and second bump layers are required to have conductivity as electrodes, and the bulk body and the sintered body are described above. A combination of metals that can have a Young's modulus ratio is required. From these viewpoints, gold, copper, or nickel is selected as the first conductive metal. In addition, as the second conductive metal, either gold or silver is selected.
- the same metal may be selected as the first conductive metal and the second conductive metal, and the gold plating layer is used as the first bump layer, and gold powder is sintered thereon. May be formed as the second bump layer.
- the first conductive metal and the second conductive metal may be different types of metals. For example, a nickel or copper plating layer may be used as the first bump layer, and a gold powder sintered thereon may be formed as the second bump layer.
- the height ratio of the first bump layer to the entire bumps is preferably 0.1 to 0.9. This is to ensure the rigidity of the bump and to exert the function of the second bump layer.
- the height ratio of the first bump layer to the whole is more preferably 0.5 to 0.9.
- each bump layer is made of a different metal
- a copper plating layer is used as a first bump layer
- gold is plated thereon to form an intermediate layer
- gold powder is sintered as a second bump layer.
- These bulk intermediate layers are preferably formed by plating (electrolytic plating, electroless plating), sputtering, CVD, or the like.
- the metal constituting the intermediate layer needs to be a conductive metal, but preferably gold, silver, platinum, palladium, titanium, chromium, copper, and nickel.
- the intermediate layer may be provided in multiple layers, or a plurality of intermediate layers made of a plurality of types of metals may be formed.
- the intermediate layer is preferably made of the same conductive metal as the second conductive metal at least in contact with the second bump layer. Therefore, in the case of a single-layered intermediate layer, the whole is preferably made of the second conductive metal, and for the multilayered intermediate layer, the uppermost layer is preferably made of the second conductive metal.
- the thickness of the intermediate layer is preferably 5 to 1000 nm as a whole. The intermediate layer is intended to ensure adhesion, and does not need to be so thick.
- the bump manufacturing method includes a step of forming a first bump layer on a substrate by any one of a plating method, a sputtering method, and a CVD method, and a purity of 99.9% by weight on the first bump layer.
- the metal paste containing the second conductive metal powder having an average particle diameter of 0.005 ⁇ m to 1.0 ⁇ m is applied, and the metal paste is dried, and then at a temperature of 70 to 320 ° C. Forming a second bump layer by heating and sintering.
- the conditions of the plating method, sputtering method, and CVD method for forming the first bump layer are not particularly limited, and the conditions and methods for bump formation generally applied to these methods are applied. it can.
- the metal paste applied for forming the second bump layer is a slurry in which the metal powder having the above characteristics is dispersed in an appropriate dispersion medium.
- the reason why the metal paste is applied is to ensure the handleability of the metal powder.
- the metal powder (second conductive metal) in the metal paste has a purity of 99.9% by weight or more and an average particle size of 0.005 ⁇ m to 1.0 ⁇ m.
- an organic solvent is usually used, and examples thereof include ester alcohol, terpineol, pine oil, butyl carbitol acetate, butyl carbitol, carbitol and the like.
- ester alcohol terpineol
- pine oil pine oil
- butyl carbitol acetate butyl carbitol
- carbitol carbitol
- the like examples thereof include ester alcohol, terpineol, pine oil, butyl carbitol acetate, butyl carbitol, carbitol and the like.
- 2,2,4-trimethyl-3-hydroxypentaisobutyrate C 12 H 24 O 3
- this metal paste may contain 1 or more types selected from an acrylic resin, a cellulose resin, and an alkyd resin as an additive.
- acrylic resins include methyl methacrylate polymers
- examples of cellulose resins include ethyl cellulose
- examples of alkyd resins include phthalic anhydride resins. Of these, ethyl cellulose is particularly preferable.
- various methods are used according to the target bump size and pattern, such as a spin coating method, a screen printing method, an ink jet method, and a method of spreading the paste with a spatula after dropping. be able to.
- the reason why the applied metal paste is dried is to remove the organic solvent in the paste.
- This drying is preferably performed at -20 ° C or higher and 5 ° C or lower.
- the atmosphere in the drying process may be a reduced pressure atmosphere. Thereby, it is possible to prevent moisture in the atmosphere from condensing on the surface of the metal powder during the drying process.
- the pressure is preferably 100 Pa or less, more preferably 10 Pa or less, but the degree of vacuum in this atmosphere is set according to the volatility of the organic solvent in the metal paste.
- the metal paste After the metal paste is dried, it is sintered to form a sintered body in which the metal particles in the paste are in close contact with each other between the surface of the first bump layer and the metal particles. .
- the sintering temperature depends on the type of metal (first conductive metal) constituting the first bump layer, but is in the range of 70 to 320 ° C. If it is less than 70 degreeC, sintering is incomplete and it cannot endure use as a bump.
- the bump according to the present invention needs to have a predetermined Young's modulus ratio between the first bump layer and the second bump layer, but at a temperature below the lower limit, the second bump layer is too soft and the Young's ratio.
- the second bump layer is significantly deformed at the time of bonding, and a problem may occur in the shape of the bump. Further, at a temperature exceeding the upper limit value, the second bump layer becomes too hard and the Young's ratio cannot be maintained properly, and the first bump layer may be deformed at the time of bonding.
- the specific range of the sintering temperature corresponding to the constituent metal of the first bump layer is 70 to 300 ° C. when the first bump layer is gold, 80 to 300 ° C. when the first bump layer is copper, In this case, the temperature is 90 to 320 ° C. In this way, the sintering temperature is adjusted by the constituent metal of the first bump layer in consideration of the difference in Young's modulus of each metal in the bulk body.
- the heating time during sintering is preferably 10 to 60 minutes. This is because the temperature of the sintering furnace is not stabilized in a short time and sufficient sintering cannot be performed, and productivity is impaired if the time is too long.
- This sintering is preferably performed without pressure.
- a photoresist before the above 1st and 2nd bump layer formation.
- the application of a photoresist is usually used for forming a fine pattern.
- middle layer is included.
- plating, sputtering, CVD, or the like can be applied, but plating, particularly electroless plating is preferable. This is because a thin thin film can be manufactured at low cost.
- the second bump layer is heated in one or both directions while being heated. Join the bumps.
- the sintered body which is the second bump layer of the bump according to the present invention, is subjected to plastic deformation at the contact portion when pressed, and a bond between metal atoms is generated at the deformation interface, resulting in a dense joint portion.
- This pressurization may be performed in one direction or in both directions. Moreover, it is preferable to make the pressure at the time of pressurization larger than the yield strength of a sintered compact for densification of a junction part.
- the heating temperature at this time is preferably 70 to 300 ° C. This is because bonding cannot be performed at a temperature lower than 70 ° C., and the effect of thermal strain during cooling increases when the temperature exceeds 300 ° C.
- ultrasonic waves may be applied in addition to heating.
- the heating temperature can be lowered.
- the conditions are preferably an amplitude of 0.5 to 5 ⁇ m and an application time of 0.5 to 3 seconds. This is because excessive application of ultrasonic waves damages the entire bump.
- the heating and application of ultrasonic waves in the joining process may be performed on at least the sintered body as the second bump layer for the purpose, but may be performed on the entire bump.
- a heating method in addition to pressurizing in an atmospheric furnace at a predetermined temperature, a stage on which a substrate (or a counter substrate) is placed may be heated at the time of bonding, and heat transfer at that time may be used. Similarly, it is easy to apply ultrasonic waves from the stage.
- the figure which illustrates roughly the bump formation process in this embodiment The SEM photograph which shows the external appearance of the bump manufactured by this embodiment.
- the SEM photograph (enlargement) which shows the appearance of the bump manufactured by this embodiment.
- the relationship between the particle size of the metal powder forming the second bump layer, the sintering conditions, and the strength of the bump layer after sintering was examined.
- a plurality of metal pastes were produced from metal powders having different particle diameters of each metal (gold, silver), which is the second conductive metal, and sintered after application, and the strength was evaluated.
- the metal paste is prepared by mixing a metal powder (purity 99.99% by weight) having a particle size of 0.005, 0.3, 1.0, and 2.0 ⁇ m manufactured by a wet reduction method with ester alcohol as an organic solvent. Was used.
- the Young's modulus is relatively stable in the metal powder having a particle size of 0.005 to 1.0 ⁇ m, whereas 2.0 ⁇ m is remarkably low.
- the bumps actually manufactured for 2.0 ⁇ m ones were easily disintegrated, although the shape was temporarily maintained as a three-dimensional state. This is considered to be due to insufficient sintering due to the sintering temperature being too low.
- the metal powder having a particle size of 0.005 ⁇ m had no problem in terms of strength after sintering, but the agglomeration in the paste state was severe, and sufficient stirring until just before use was required. Therefore, in consideration of handleability, it can be said that a metal powder paste having a particle size smaller than this is not preferred.
- the strength of the sintered body rapidly increases when it exceeds 300 ° C., but based on the strength (Young's modulus) of the first bump layer, an appropriate Young's modulus ratio is set to set the upper limit of the sintering temperature. It can be said that it is necessary to define.
- FIG. 1 illustrates a bump manufacturing process in this embodiment.
- a photoresist film (manufactured by Kayaku Microchem Co., Ltd .: AZP4903) is spun onto the surface of a semiconductor wafer (material: silicon) on which a Ti film (0.5 ⁇ m) and an Au film (1.0 ⁇ m) have been formed in advance.
- After coating and pre-baking 100 ° C. ⁇ 120 seconds, patterning was performed. Patterning was performed under irradiation conditions of g-line (wavelength 436 nm) with an illuminance of 2100 mJ / cm 2 and an exposure time of 150 seconds.
- the resist film thickness of this substrate was 20 ⁇ m as measured by a stylus type film thickness meter, and the in-plane variation was ⁇ 1 ⁇ m.
- the diameter of the opening was 20 ⁇ m.
- a gold plating layer (first bump layer) was formed in the opening.
- an electrolytic gold plating solution (manufactured by Nippon Electroplating Engineers Co., Ltd .: Tempex 209A) was used. Then, a gold plating layer was formed to a height of 10 ⁇ m.
- a gold paste as a metal paste was dropped on the surface of the photoresist layer, and the gold paste was filled into the openings by a spin coating method.
- the gold paste used was gold powder (average particle size: 0.3 ⁇ m) having a purity of 99.99% by weight and ester alcohol (2,2,4-trimethyl-3-hydroxypentaisobutyrate (organic solvent) as an organic solvent). C 12 H 24 O 3 )) is mixed and adjusted. After applying the paste, this was vacuum dried at + 5 ° C. in a dryer.
- the bump formed in this example has a form in which a powdered sintered body (second bump layer) is crowned on a gold plating layer (first bump layer), and bridge formation between the bumps is also possible. The shape was neatly arranged.
- the Young's modulus was measured for each of the first bump layer and the second bump layer of the manufactured bump.
- the Young's modulus was measured by conducting a shear test as shown in FIG. 4, creating a stress-strain curve, and determining the slope of the straight line portion.
- a bonding test was performed using the bump pattern-formed silicon wafer produced as described above.
- a glass substrate on which a Ti film (0.5 ⁇ m) and an Au film (1.0 ⁇ m) are formed by sputtering is used as a counter substrate, and a bump forming surface of a silicon wafer is opposed to the Au film surface of the counter substrate.
- a glass substrate was placed on a heat stage heated to 230 ° C., and pressure and pressure were applied for 10 minutes so that a pressure of 0.015 N per bump was applied.
- the first bump layer is gold (plating) and the second bump layer is gold (sintered).
- the metal of the first and second bump layers is changed, and the bump formation and bonding tests are performed while adjusting the sintering temperature of the second bump layer.
- the relationship between Young's modulus ratio and bondability was investigated. Tables 3 to 7 show the results.
- the ratio of the strength (Young's modulus) of the first and second bump layers is important in order to improve the bondability. It can be seen that the ratio needs to be in the range of 0.1 to 0.4.
- the sintering temperature range of the sintered body that becomes the second bump layer is appropriately adjusted. It can be said that it is preferable.
- the entire bump was formed by gold plating, and the same evaluation was performed.
- the bumps were formed by using the same electrolytic gold plating solution as in this embodiment and adjusting the plating time to form a plating layer over the entire resist opening. Then, the resist was removed in the same manner as in the present embodiment to form bumps, but the bump height was 20 ⁇ m ⁇ 2 ⁇ m.
- the same bonding test as in this embodiment was performed on the silicon wafer having the plated bump. After bonding, the continuity between adjacent bump joints was measured at room temperature, but it was not possible to take continuity of all terminals. And also about the location which can take conduction, the electrical resistance was 2.1 ⁇ 0.6 ⁇ .
- the comparative example is clearly inferior in conduction stability. That is, in this embodiment, all terminals are electrically connected, the resistance value is low, and the variation is small. Such a difference is considered to be due to the non-uniform bonding state of the bumps due to variations in bump height in the substrate having bumps formed by plating in the comparative example.
- the double-structured bump according to the present invention can solve the problem caused by the variation in bump height at the time of bonding by the flip chip method.
- the substrate mounting method using the present invention is suitable for manufacturing various semiconductor circuits for which high integration is desired.
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Abstract
Description
前記第2バンプ層を構成する焼結体は、純度が99.9重量%以上であり、平均粒径が0.005μm~1.0μmである第2の導電性金属からなる金属粉末を焼結して形成されたものであり、前記第2バンプ層のヤング率が、前記第1バンプ層のヤング率の0.1~0.4倍である、バンプである。
Claims (9)
- 基板上に所定パターンで形成され、導電性金属からなるバンプであって、
基板上に形成され、金、銅、ニッケルのいずれかである第1の導電性金属のバルク体からなる第1バンプ層と、前記第1バンプ層上に形成され、金、銀のいずれかである第2の導電性金属の粉末の焼結体からなる第2バンプ層と、からなる2層構造を有し、
前記第1バンプ層を構成するバルク体は、メッキ法、スパッタリング法、CVD法のいずれかにより形成されるものであり、
前記第2バンプ層を構成する焼結体は、純度が99.9重量%以上であり、平均粒径が0.005μm~1.0μmである第2の導電性金属からなる金属粉末を焼結して形成されたものであり、
前記第2バンプ層のヤング率が、前記第1バンプ層のヤング率の0.1~0.4倍である、バンプ。 - 第1バンプ層のバンプ全体に対する高さ比は、0.1~0.9である請求項1記載のバンプ。
- 第1の導電性金属と第2の導電性金属とが異なる種類の金属であり、第1バンプ層と第2バンプ層との間に、密着性向上のためのバルク状の中間層を少なくとも1層備える請求項1または請求項2記載のバンプ。
- 中間層は、少なくとも第2バンプ層との接触面が第2の導電性金属と同じ導電性金属からなる請求項3記載のバンプ。
- 請求項1~請求項4のいずれかに記載のバンプの製造方法であって、
基板上に、メッキ法、スパッタリング法、CVD法のいずれかにより第1バンプ層を形成する工程、
前記第1バンプ層上に、純度が99.9重量%以上であり、平均粒径が0.005μm~1.0μmである第2の導電性金属の粉末を含む金属ペーストを塗布し、前記金属ペーストを乾燥させた後、焼結温度を70~320℃として加熱焼結して第2バンプ層を形成する工程、
を含む方法。 - 第1バンプ層の形成後、中間層を形成する工程を少なくとも1回含む請求項5記載のバンプの製造方法。
- 請求項1~請求項4のいずれかに記載のバンプが形成された基板を用いて、フリップチップ法により前記基板を対向基板に実装する方法であって、少なくとも第2バンプ層を加熱しながら前記基板の一方向又は双方向から加圧しバンプを接合する方法。
- 接合時の加熱温度を70~300℃とする請求項7記載の方法。
- 更に、少なくとも第2バンプ層に超音波を印加して加圧する請求項7又は請求項8記載の方法。
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CN201080008016.7A CN102318052B (zh) | 2009-03-06 | 2010-03-05 | 凸块及该凸块的形成方法以及形成有该凸块的基板的安装方法 |
EP10748829.8A EP2405474A4 (en) | 2009-03-06 | 2010-03-05 | BOSS, METHOD FOR FORMING BOSS AND METHOD FOR MOUNTING SUBSTRATE COMPRISING BOSS FORMED ON IT |
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Also Published As
Publication number | Publication date |
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JP5363839B2 (ja) | 2013-12-11 |
KR20110132428A (ko) | 2011-12-07 |
US8492894B2 (en) | 2013-07-23 |
JP2009302511A (ja) | 2009-12-24 |
CN102318052A (zh) | 2012-01-11 |
EP2405474A4 (en) | 2015-05-27 |
KR101650219B1 (ko) | 2016-08-30 |
US20140295619A1 (en) | 2014-10-02 |
US20110272802A1 (en) | 2011-11-10 |
EP2405474A1 (en) | 2012-01-11 |
US8962471B2 (en) | 2015-02-24 |
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