WO2010098273A1 - 異方性導電フィルム及び発光装置 - Google Patents

異方性導電フィルム及び発光装置 Download PDF

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Publication number
WO2010098273A1
WO2010098273A1 PCT/JP2010/052600 JP2010052600W WO2010098273A1 WO 2010098273 A1 WO2010098273 A1 WO 2010098273A1 JP 2010052600 W JP2010052600 W JP 2010052600W WO 2010098273 A1 WO2010098273 A1 WO 2010098273A1
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WIPO (PCT)
Prior art keywords
light
anisotropic conductive
conductive film
adhesive layer
insulating adhesive
Prior art date
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Ceased
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PCT/JP2010/052600
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English (en)
French (fr)
Inventor
士行 蟹澤
博之 熊倉
秀次 波木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
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Sony Chemical and Information Device Corp
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Filing date
Publication date
Application filed by Sony Chemical and Information Device Corp filed Critical Sony Chemical and Information Device Corp
Priority to KR1020117016655A priority Critical patent/KR101695994B1/ko
Priority to CN201080009516.2A priority patent/CN102334238B/zh
Priority to US13/142,956 priority patent/US8444882B2/en
Publication of WO2010098273A1 publication Critical patent/WO2010098273A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/04—Ingredients treated with organic substances
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1189—Pressing leads, bumps or a die through an insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer

Definitions

  • the present invention relates to an anisotropic conductive film and a light emitting device.
  • a light emitting device using a light emitting diode (LED) element is widely used, and the structure of an old type light emitting device is such that, as shown in FIG. 3, an LED element 33 is bonded to a substrate 31 with a die bond adhesive 32, The p electrode 34 and the n electrode 35 on the upper surface are wire-bonded to the connection terminal 36 of the substrate 31 with a gold wire 37, and the entire LED element 33 is sealed with a transparent mold resin 38.
  • the gold wire 37 absorbs light having a wavelength of 400 to 500 nm emitted from the LED element 33 to the upper surface side, and a part of the light emitted to the lower surface side. Is absorbed by the die-bonding adhesive 32 and the luminous efficiency of the LED element 33 is reduced.
  • the LED element 33 be flip-chip mounted (Patent Document 1).
  • bumps 39 are formed on the p electrode 34 and the n electrode 35, respectively, and further, the bump formation surface of the LED element 33 is insulated from the p electrode 34 and the n electrode 35.
  • the light reflecting layer 40 is provided on the surface.
  • the LED element 33 and the substrate 31 are connected and fixed using an anisotropic conductive paste 41. For this reason, in the light emitting device of FIG. 4, the light emitted upward of the LED element 33 is not absorbed by the gold wire, and most of the light emitted downward is reflected by the light reflecting layer 40 and emitted upward. The luminous efficiency does not decrease.
  • the light reflecting layer 40 must be provided on the LED element 33 by a metal vapor deposition method or the like so as to be insulated from the p-electrode 34 and the n-electrode 35, and thus an increase in manufacturing cost is inevitable. There was a problem.
  • An object of the present invention is to solve the above-mentioned problems of the prior art, and light reflection that causes an increase in manufacturing cost when a light emitting device using a light emitting diode (LED) element is flip-chip mounted.
  • An object is to provide an anisotropic conductive film that does not reduce luminous efficiency without providing a layer on an LED element, and a light-emitting device using the same.
  • the present inventor can achieve the above-mentioned object by providing the anisotropic conductive film with a light reflection function.
  • the anisotropic conductive film has a two-layer configuration, and one of them is a light-reflective insulating adhesive layer. And the other was an anisotropic conductive adhesive layer, and the present invention was completed.
  • the present invention is an anisotropic conductive film in which a light-reflective insulating adhesive layer and an anisotropic conductive adhesive layer are laminated, and the light-reflective insulating adhesive layer is light-transmitted in an insulating adhesive.
  • An anisotropic conductive film in which reflective particles are dispersed is provided.
  • the present invention also provides a light emitting device in which the substrate and the light emitting diode element are flip-chip mounted via an anisotropic conductive film between a connection terminal on the substrate and a bump for connecting the light emitting diode element. Because The anisotropic conductive film is formed by laminating a light-reflective insulating adhesive layer and an anisotropic conductive adhesive layer, and the light-reflective insulating adhesive layer has light-reflective particles dispersed in the insulating adhesive. A light emitting device which is an anisotropic conductive film is provided.
  • the anisotropic conductive film of the present invention has a structure in which a light-reflective insulating adhesive layer and an anisotropic conductive adhesive layer are laminated. Therefore, in the light emitting device manufactured by anisotropically connecting the LED element and the substrate using the LED element, the light emitted from the LED element is directed toward the substrate side (that is, the back side of the LED element). The emitted light is reflected by the light reflective insulating adhesive layer and emitted from the surface side. Therefore, the light emission efficiency of the light emitting device does not decrease.
  • FIG. 1 is a cross-sectional view of the anisotropic conductive film 100 of the present invention.
  • the anisotropic conductive film 100 has a structure in which a light reflective insulating adhesive layer 1 and an anisotropic conductive adhesive layer 2 are laminated, and the light reflective insulating adhesive layer 1 is formed in an insulating adhesive.
  • the light reflective particles are dispersed. Therefore, the light incident on the anisotropic conductive film 100 from the light-reflective insulating adhesive layer 1 side is reflected on the incident side, depending on the properties of the light-reflective particles.
  • the anisotropic conductive adhesive layer 2 Even if a part of the light incident from the anisotropic conductive adhesive layer 2 is absorbed or scattered by the anisotropic conductive adhesive layer 2, most of the light is reflected by the light-reflective insulating adhesive layer 1 and is anisotropic. Emitted from the conductive conductive adhesive layer 2. Therefore, it is possible to prevent the light emission efficiency of the LED element from being lowered.
  • the insulating adhesive constituting the light-reflective insulating adhesive layer 1 those used as insulating binder resins for conventional anisotropic conductive adhesive films can be appropriately employed.
  • a thermosetting adhesive in which a crosslinking agent such as an acid anhydride, an imidazole compound, or dicyan can be used in an epoxy resin mainly composed of an alicyclic epoxy resin or a hydrogenated epoxy resin can be used.
  • metal oxide particles such as calcium carbonate, titanium dioxide, silicon dioxide, and aluminum oxide
  • metal particles such as nickel, silver, and aluminum coated with an insulating film
  • the shape of the particles include an amorphous shape, a spherical shape, a scaly shape, and a needle shape.
  • a spherical shape is preferable from the viewpoint of the light diffusion effect and a scaly shape is preferable from the viewpoint of the total reflection effect.
  • Particularly preferred are scaly silver particles in terms of light reflectance.
  • the size of the light-reflective particles varies depending on the shape, but generally, if it is too large, there is a risk of inhibiting connection by anisotropic conductive particles, and if it is too small, it is difficult to reflect light.
  • the major axis is preferably 0.1 to 100 ⁇ m, more preferably 1 to 50 ⁇ m, and the thickness is preferably 0. 0.01 to 10 ⁇ m, more preferably 0.1 to 5 ⁇ m.
  • the size of the light-reflective particles is the size including the insulating coating when the insulating coating is applied.
  • the layer thickness of the light-reflective insulating adhesive layer 1 is preferable from the viewpoint of connection reliability as long as the intended light reflectivity can be obtained. Usually, it is 2 to 30 ⁇ m. Assuming this thickness range, the blending ratio of the insulating adhesive and the light reflective particles in the light reflective insulating adhesive layer 1 varies depending on the shape of the light reflective particles, but the amount is 100 parts by weight of the insulating adhesive. On the other hand, when the light reflective particles are scale-like, the light reflective particles are preferably 1 to 200 parts by mass, more preferably 10 to 100 parts by mass.
  • insulating resins can be used as the insulating coating in the metal particles in which the light reflecting particles are coated with an insulating coating.
  • a cured product of acrylic resin can be preferably used.
  • a preferable example is a resin film obtained by radical copolymerization of methyl methacrylate and 2-hydroxyethyl methacrylate in the presence of a radical initiator such as an organic peroxide such as benzoyl peroxide.
  • a radical initiator such as an organic peroxide such as benzoyl peroxide.
  • it is more preferably crosslinked with an isocyanate-based crosslinking agent such as 2,4-tolylene diisocyanate.
  • the metal oxide particles are also preferably coated with an insulating coating similar to the metal particles from the viewpoint of dispersion stability.
  • metal particles it is preferable to introduce a ⁇ -glycidoxy group, a vinyl group or the like into the metal surface in advance with a silane coupling agent.
  • anisotropic conductive adhesive layer 2 constituting the anisotropic conductive film 100 of the present invention one having the same configuration as that of a conventional anisotropic conductive film can be used.
  • Conductive particles for anisotropic conductive connection are dispersed.
  • a thermosetting adhesive for example, an epoxy resin mainly composed of an alicyclic epoxy resin, a hydrogenated epoxy resin, or the like contains a crosslinking agent such as an acid anhydride, an imidazole compound, or dicyan. Things can be mentioned.
  • metal particles such as gold and nickel
  • metal-coated resin particles in which the surface of resin particles such as benzogranamine resin is coated with a metal such as nickel may be used. it can.
  • Such conductive particles have a spherical shape, and if the particle size is too large, the connection reliability is lowered. Therefore, it is preferably 1 to 20 ⁇ m, more preferably 3 to 10 ⁇ m.
  • the layer thickness of the anisotropic conductive adhesive layer 2 is usually 5 to 40 ⁇ m in order to obtain the intended connection reliability. Assuming this thickness range, the blending ratio of the insulating adhesive and the conductive particles in the anisotropic conductive adhesive layer 2 is preferably 1 to 50 parts by weight of the conductive particles with respect to 100 parts by weight of the insulating adhesive. More preferably, it is 10 to 25 parts by mass.
  • the anisotropic conductive film of the present invention can be manufactured as described below. First, light-reflective particles and an insulating adhesive are dispersed and mixed with a solvent such as toluene, applied to a peeled PET film so as to have a desired thickness, dried at a temperature of about 80 ° C. Create a reflective insulating adhesive layer film. Separately, conductive particles for anisotropic conductive connection and an insulating adhesive are dispersed and mixed together with a solvent such as toluene, and applied to a peeled PET film so as to have a desired thickness, about 80 ° C. An anisotropic conductive adhesive layer film is prepared by drying at the temperature of Next, the anisotropic conductive film of the present invention can be obtained by superimposing the two films and integrating the films by pressing at about 40 ° C. through the release films on both sides.
  • the light emitting device 200 includes the anisotropy of the present invention described above between the connection terminal 22 on the substrate 21 and the connection bump 26 formed on each of the n electrode 24 and the p electrode 25 of the LED element 23.
  • the substrate 21 and the LED element 23 are flip-chip mounted via a conductive film 100. That is, the anisotropic conductive film 100 is a laminated structure of the light-reflective insulating adhesive layer 1 and the anisotropic conductive adhesive layer 2, and the light-reflective insulating adhesive layer 1 is light-reflective in the insulating adhesive. It is made by dispersing conductive particles.
  • the light-reflective insulating adhesive layer 1 of the anisotropic conductive film 100 is desirably disposed on the LED element 23 side, but may be disposed on the opposite side. In addition, you may seal with transparent mold resin so that the whole LED element 23 may be covered as needed.
  • the light emitting device 200 configured as described above, light emitted from the LED element 23 toward the substrate 21 is reflected by the light reflective insulating adhesive layer 1 of the anisotropic conductive film 100. Then, the light is emitted from the upper surface of the LED element 23. Accordingly, it is possible to prevent a decrease in luminous efficiency.
  • the configuration (the LED element 23, the bump 26, the substrate 21, the connection terminal 22, and the like) can be the same as the configuration of the conventional light emitting device.
  • the light emitting device 200 of the present invention can be manufactured using a conventional anisotropic conductive connection technique except that the anisotropic conductive film 100 is used.
  • Example 1 (1a) Preparation of light-reflective particles 5 g of scaly silver particles (length 10 ⁇ m, width 10 ⁇ m, thickness 0.5 ⁇ m) and 50 ml of toluene are placed in a flask equipped with a stirrer, and a silane coupling agent (3 0.25 g of (methacryloxypropyltriethoxysilane) was added and stirred at 25 ° C. for 60 minutes. Next, 2 g of methyl methacrylate, 2 g of 2-hydroxyethyl methacrylate, 0.04 g of benzoyl peroxide and 1 g of 2,4-tolylene diisocyanate were added to this mixture and stirred at 80 ° C. for 12 hours. Insulating coated flaky silver particles were obtained as light reflecting particles. The average size of the light-reflective particles including the insulating coating was 10 ⁇ m in length, 10 ⁇ m in width, and 0.5 ⁇ m in thickness.
  • anisotropic conductive adhesive layer film 100 parts by mass of the same insulating binder resin as (1b) described above and 20 parts by mass of silver-plated coating resin particles (particle size 5 ⁇ m) were dispersed and mixed in 100 ml of toluene. And the anisotropic conductive adhesive layer film was obtained by apply
  • PET polyethylene terephthalate
  • the obtained light-emitting device was allowed to emit light, and the initial luminance (kcd / m 2 ) of light emitted from the upper surface was measured using a luminance meter (BM-9, Topcon Technohouse Co., Ltd.). Further, the LED lighting reliability is set to “ ⁇ ” when a constant current of 20 mA is passed through the LED at 100 ° C. and the change in Vf value is within ⁇ 0.3V, and the change in Vf value is ⁇ 0.3V. The case of exceeding was evaluated as “ ⁇ ”. The obtained results are shown in Table 1.
  • Example 2 In the same manner as in Example 1, except that 50 parts by mass of titanium dioxide particles having an average particle diameter of 0.2 ⁇ m (JR405, Taca Co., Ltd.) were used as the light-reflecting particles instead of the insulating coated scaly silver particles. A conductive insulating adhesive layer film and an anisotropic conductive adhesive layer film were prepared, and further an anisotropic conductive film was prepared. Using this anisotropic conductive film, a light emitting diode element was connected to a glass epoxy substrate in the same manner as in Example 1, and the characteristics were evaluated. The obtained results are shown in Table 1.
  • Comparative Example 1 A silver paste was used in place of the anisotropic conductive film, the light emitting diode was connected to a glass epoxy substrate, and the characteristics were evaluated in the same manner as in Example 1. The obtained results are shown in Table 1.
  • Example 2 Without using the light-reflective insulating adhesive layer film, the anisotropic conductive adhesive layer film of Example 1 itself was used as the anisotropic conductive film, and the light-emitting diode element was made into a glass epoxy substrate as in Example 1. And was evaluated for characteristics. The obtained results are shown in Table 1.
  • Example 1 As can be seen from Table 1, in the case of Example 1, since the scaly Ag particles coated with insulation were used, the initial luminance was higher than that of the silver paste (Comparative Example 1), and the LED lighting reliability was also high. It was good. Further, in Example 2, the use of the TiO 2 particles, indicates the initial luminance comparable to a silver paste (Comparative Example 1), yet was LED lighting reliability satisfactory. In the case of Comparative Example 2, there was a problem in the initial luminance because the light reflecting layer was not provided.
  • the anisotropic conductive film of the present invention has a structure in which a light-reflective insulating adhesive layer and an anisotropic conductive adhesive layer are laminated. For this reason, in the light emitting device manufactured by anisotropically connecting the LED element and the substrate using the LED element, the light emitted from the LED element is directed toward the substrate side (that is, the back side of the LED element). The light emitted in this manner can be reflected by the light reflective insulating adhesive layer and emitted from the surface side. Therefore, the light emission efficiency of the light emitting device can be prevented from being lowered. Therefore, the anisotropic conductive film of the present invention is useful when LED elements are flip-lip mounted.

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Abstract

　発光ダイオード素子を使用した発光装置をフリップチップ実装する際に、製造コストの増大を招くような光反射層をＬＥＤ素子に設けることなく、発光効率を低下させない異方性導電フィルム及びそれを用いた発光装置を提供する。この異方性導電フィルムは、光反射性絶縁接着層と異方性導電接着層とが積層され、その光反射性絶縁接着層は、絶縁性接着剤中に光反射性粒子が分散した構造を有する。発光装置は、この異方性導電フィルムを、基板上の接続端子と、発光ダイオード素子の接続用のバンプとの間に配し、基板と発光ダイオード素子とをフリップチップ実装した構造を有している。

Description

異方性導電フィルム及び発光装置
　本発明は、異方性導電フィルム及び発光装置に関する。
　発光ダイオード（ＬＥＤ）素子を使用した発光装置が広く使用されており、旧タイプの発光装置の構造は、図３に示すように、基板３１上にダイボンド接着剤３２でＬＥＤ素子３３を接合し、その上面のｐ電極３４とｎ電極３５とを、基板３１の接続端子３６に金ワイヤ３７でワイヤボンディングし、ＬＥＤ素子３３全体を透明モールド樹脂３８で封止したものとなっている。ところが、図３の発光装置の場合、ＬＥＤ素子３３が発する光のうち、上面側に出射する４００～５００ｎｍの波長の光を金ワイヤ３７が吸収し、また、下面側に出射した光の一部がダイボンド接着剤３２により吸収されてしまい、ＬＥＤ素子３３の発光効率が低下するという問題がある。
　このため、図４に示すように、ＬＥＤ素子３３をフリップチップ実装することが提案されている（特許文献１）。このフリップチップ実装技術においては、ｐ電極３４とｎ電極３５とにバンプ３９がそれぞれ形成されており、更に、ＬＥＤ素子３３のバンプ形成面には、ｐ電極３４とｎ電極３５と絶縁されるように光反射層４０が設けられている。そして、ＬＥＤ素子３３と基板３１とは、異方性導電ペースト４１を用いて接続固定される。このため、図４の発光装置においては、ＬＥＤ素子３３の上方への出射した光は金ワイヤで吸収されず、下方へ出射した光の殆どは光反射層４０で反射して上方に出射するので、発光効率が低下しない。
特開平１１－１６８２３５号公報
　しかしながら、特許文献１の技術ではＬＥＤ素子３３に光反射層４０を、ｐ電極３４とｎ電極３５と絶縁するように金属蒸着法などにより設けなければならず、製造上、コストアップが避けられないという問題があった。
　本発明の目的は、以上の従来の技術の問題点を解決することであり、発光ダイオード（ＬＥＤ）素子を使用した発光装置をフリップチップ実装する際に、製造コストの増大を招くような光反射層をＬＥＤ素子に設けることなく、発光効率を低下させない異方性導電フィルム、及びそれを用いた発光装置を提供することである。
　本発明者は、異方性導電フィルムに光反射機能を持たせれば上述の目的を達成でき、その具体的構成として、異方性導電フィルムを２層構成とし、一方を光反射性絶縁接着層とし、他方を異方性導電接着層とすることに想到し、本発明を完成させた。
　即ち、本発明は、光反射性絶縁接着層と異方性導電接着層とが積層されてなる異方性導電フィルムであって、該光反射性絶縁接着層が、絶縁性接着剤中に光反射性粒子が分散したものである異方性導電フィルムを提供する。
　また、本発明は、基板上の接続端子と、発光ダイオード素子の接続用のバンプとの間に異方性導電フィルムを介し、該基板と該発光ダイオード素子とがフリップチップ実装されている発光装置であって、
　該異方性導電フィルムが、光反射性絶縁接着層と異方性導電接着層とが積層されてなり、該光反射性絶縁接着層が、絶縁性接着剤中に光反射性粒子が分散してなる異方性導電フィルムである発光装置を提供する。
　本発明の異方性導電フィルムは、光反射性絶縁接着層と異方性導電接着層とが積層された構造を有する。従って、それを用いてＬＥＤ素子と基板とを異方性導電接続して製造された発光装置においては、ＬＥＤ素子が発した光のうち、基板側（即ち、ＬＥＤ素子の裏面側）に向かって発せられた光は、光反射性絶縁接着層で反射して表面側から出射する。従って、発光装置の発光効率は低下しない。
本発明の異方性導電フィルムの断面図である。 本発明の発光装置の断面図である。 従来の発光装置の断面図である。 従来の発光装置の断面図である。
　本発明を図面を参照しつつ詳細に説明する。
　図１は、本発明の異方性導電フィルム１００の断面図である。この異方性導電フィルム１００は、光反射性絶縁接着層１と異方性導電接着層２とが積層された構造を有し、その光反射性絶縁接着層１は、絶縁性接着剤中に光反射性粒子が分散したものとなっている。従って、異方性導電フィルム１００に対し、光反射性絶縁接着層１側から入射した光は、光反射性粒子の性状にもよるが、入射側に反射する。また、異方性導電接着層２側から入射した光も、その一部が異方性導電接着層２において吸収あるいは散乱するとしても、多くは光反射性絶縁接着層１で反射し、異方性導電接着層２から出射する。従って、ＬＥＤ素子の発光効率を低下させないようにすることができる。
　本発明において、光反射性絶縁接着層１を構成する絶縁性接着剤としては、従来の異方性導電接着フィルムの絶縁性バインダー樹脂として使用されているものを適宜採用することができる。例えば、脂環式エポキシ樹脂や水素添加エポキシ樹脂などを主成分としたエポキシ系樹脂に、酸無水物、イミダゾール化合物、ジシアンなどの架橋剤を含有させた熱硬化性接着剤を使用することができる。なお、光反射性絶縁接着層１を構成する絶縁性接着剤と、後述する異方性導電接着層２を構成するバインダーとは、密着性等を考慮すると同種のものを使用することが好ましい。
　光反射性粒子としては、炭酸カルシウム、二酸化チタン、二酸化ケイ素、酸化アルミ等の金属酸化物の粒子、絶縁被膜で被覆されたニッケル、銀、アルミニウムなどの金属粒子などを使用することができる。粒子の形状としては、無定型、球状、鱗片状、針状等を挙げることができるが、中でも、光拡散効果の点から球状、全反射効果の点から鱗片状の形状が好ましい。特に好ましいものは、光の反射率の点から鱗片状銀粒子である。
　光反射性粒子の大きさは、形状によっても異なるが、一般に大きすぎると、異方性導電粒子による接続を阻害するおそれがあり、小さすぎると光を反射しにくくなるので、好ましくは球状の場合には粒径０．１～３０μｍ、より好ましくは０．２～１０μｍであり、鱗片状の場合には、長径が好ましくは０．１～１００μｍ、より好ましくは１～５０μｍで厚みが好ましくは０．０１～１０μｍ、より好ましくは０．１～５μｍである。ここで、光反射性粒子の大きさは、絶縁被覆されている場合には、その絶縁被覆も含めての大きさである。
　光反射性絶縁接着層１の層厚は、意図した光反射性が得られる限り、薄い方が接続信頼性の点から好ましい。通常、２～３０μｍである。この厚み範囲を前提とした場合、光反射性絶縁接着層１における絶縁性接着剤と光反射性粒子との配合割合は、光反射性粒子の形状により異なるが、絶縁性接着剤１００質量部に対し、光反射性粒子が鱗片状の場合には光反射性粒子を、好ましくは１～２００質量部、より好ましくは１０～１００質量部である。
　光反射性粒子が絶縁被膜で被覆された金属粒子における当該絶縁被覆としては、種々の絶縁性樹脂を使用することができる。機械的強度や透明性等の点からアクリル系樹脂の硬化物を好ましく使用することができる。好ましくは、ベンゾイルパーオキサイド等の有機過酸化物などのラジカル開始剤の存在下で、メタクリル酸メチルとメタクリル酸２－ヒドロキシエチルとをラジカル共重合させた樹脂被膜を挙げることができる。この場合、２，４－トリレンジイソシアネート等のイソシアネート系架橋剤で架橋されていることがより好ましい。なお、金属酸化物の粒子についても、分散安定性の観点から金属粒子と同様の絶縁被膜で被覆しておくことが好ましい。
　また、金属粒子としては、予めシランカップリング剤でγ－グリシドキシ基やビニル基等を金属表面に導入しておくことが好ましい。
　本発明の異方性導電フィルム１００を構成する異方性導電接着層２としては、従来の異方性導電フィルムと同様の構成のものを使用することができ、通常、熱硬化性接着剤に異方性導電接続用の導電粒子を分散させたものである。このような熱硬化性接着剤としては、例えば、脂環式エポキシ樹脂や水素添加エポキシ樹脂などを主成分としたエポキシ系樹脂に、酸無水物、イミダゾール化合物、ジシアンなどの架橋剤を含有させたものを挙げることができる。また、異方性導電接続用の導電粒子としては、金、ニッケルなどの金属粒子、ベンゾグラナミン樹脂等の樹脂粒子の表面をニッケルなどの金属で被覆した金属被覆樹脂粒子等を使用することができる。
　このような導電粒子は球状形状であり、その粒径は大きすぎると接続信頼性の低下となるので、好ましくは１～２０μｍ、より好ましくは３～１０μｍである。
　異方性導電接着層２の層厚は、意図した接続信頼性を得るために、通常、５～４０μｍである。この厚み範囲を前提とした場合、異方性導電接着層２における絶縁性接着剤と導電粒子との配合割合は、絶縁性接着剤１００質量部に対し、好ましくは導電粒子を１～５０質量部、より好ましくは１０～２５質量部である。
　本発明の異方性導電フィルムは、次に説明するように製造することができる。まず、光反射性粒子と絶縁性接着剤とをトルエン等の溶媒とともに分散混合し、剥離処理したＰＥＴフィルムに所期の厚さとなるように塗布し、約８０℃程度の温度で乾燥して光反射性絶縁接着層フィルムを作成する。それとは別に、異方性導電接続用の導電粒子と絶縁性接着剤とをトルエン等の溶媒とともに分散混合し、剥離処理したＰＥＴフィルムに所期の厚さとなるように塗布し、約８０℃程度の温度で乾燥して異方性導電接着層フィルムを作成する。次に、二つのフィルムを重ね合わせ、両側の剥離フィルムを介し、約４０℃で加圧することでフィルムを一体化することにより本発明の異方性導電フィルムを得ることができる。
　次に、本発明の発光装置について図２を参照しながら説明する。発光装置２００は、基板２１上の接続端子２２と、ＬＥＤ素子２３のｎ電極２４とｐ電極２５とのそれぞれに形成された接続用のバンプ２６との間に、前述の本発明の異方性導電フィルム１００を介し、該基板２１と該ＬＥＤ素子２３とがフリップチップ実装されている発光装置である。即ち、異方性導電フィルム１００は、光反射性絶縁接着層１と異方性導電接着層２との積層構造物であり、光反射性絶縁接着層１は、絶縁性接着剤中に光反射性粒子が分散してなるものである。この場合、異方性導電フィルム１００の光反射性絶縁接着層１がＬＥＤ素子２３側に配置されていることが望ましいが、反対側に配置されていてもよい。なお、必要に応じて、ＬＥＤ素子２３の全体を覆うように透明モールド樹脂で封止してもよい。
　このように構成されている発光装置２００においては、ＬＥＤ素子２３が発した光のうち、基板２１側に向かって発した光は、異方性導電フィルム１００の光反射性絶縁接着層１で反射し、ＬＥＤ素子２３の上面から出射する。従って、発光効率の低下を防止することができる。
　本発明の発光装置２００における異方性導電フィルム１００以外の構成（ＬＥＤ素子２３、バンプ２６、基板２１、接続端子２２等）は、従来の発光装置の構成と同様とすることができる。また、本発明の発光装置２００は、異方性導電フィルム１００を使用すること以外は、従来の異方性導電接続技術を利用して製造することができる。
　　実施例１
（１ａ）光反射性粒子の作成
　撹拌機つきフラスコに鱗片状銀粒子（縦１０μｍ、横１０μｍ、厚０．５μｍ）５ｇとトルエン５０ｍｌとを投入し、撹拌しながらフラスコにシランカップリング剤（３－メタクリロキシプロピルトリエトキシシラン）０．２５ｇを投入し、２５℃で６０分間撹拌した。次に、この混合物に、メタクリル酸メチル２ｇとメタクリル酸－２－ヒドロキシエチル２ｇとベンゾイルパーオキサイド０．０４ｇと２，４－トリレンジイソシアネート１ｇとを投入し、８０℃で１２時間撹拌することにより、光反射性粒子として絶縁被覆鱗片状銀粒子を得た。絶縁被覆を含めた光反射性粒子の平均的大きさは、縦１０μｍ、横１０μｍ、厚み０．５μｍであった。
（１ｂ）光反射性絶縁性接着層フィルムの作成
　水添化エポキシ樹脂（ＹＸ８０００、ＪＥＲ（株））に酸無水物（ＭＨ－７００、新日本理化（株））、イミダゾール（２ＭＺＡ、四国化成（株））を加えたことにより絶縁性バインダー樹脂を調製した。得られた絶縁性バインダー樹脂１００質量部と絶縁被覆鱗片状銀粒子５０質量部とを、トルエン１００ｍｌに分散混合し、得られた混合物を、剥離ポリエチレンテレフタレート（ＰＥＴ）フィルムに、乾燥厚で１０μｍとなるように塗布し、８０℃で５分間乾燥することにより、光反射性絶縁性接着層フィルムを得た。
（１ｃ）異方性導電接着層フィルムの作成
　前述の（１ｂ）と同様の絶縁性バインダー樹脂１００質量部と銀メッキ被覆樹脂粒子（粒径５μｍ）２０質量部とを、トルエンを１００ｍｌに分散混合し、得られた混合物を、剥離ポリエチレンテレフタレート（ＰＥＴ）フィルムに、乾燥厚で１０μｍとなるように塗布し、８０℃で５分間乾燥することにより、異方性導電接着層フィルムを得た。
（１ｄ）異方性導電フィルムの作成
　得られた光反射性絶縁性接着層フィルムと異方性導電接着層フィルムとを重ね合わせ、両側のＰＥＴフィルムを介して、４０℃で１０秒間加圧することにより、両フィルムを積層することにより異方性導電フィルムを得た。
　＜特性評価＞
　２００℃の加熱ヘッドを用い、発光ダイオード素子（Ｉｆ＝２０ｍＡ時の特性が、Ｖｆ＝３．３Ｖ、光度＝１５０ｍｃｄ、ドミナント波長＝４７０ｎｍである）を、異方性導電フィルムを介しガラスエポキシ基板に１Ｋｇ／チップで２０秒間加熱加圧することにより接着した。この際、発光ダイオード素子のバンプ部分には圧力がかかるため、光反射性絶縁接着層フィルムの接着剤は排除され、異方性導電接着層の導電粒子で発光ダイオード素子とガラスエポキシ基板との間の導通をとることができた。なお、バンプ以外の光反射性絶縁接着層は排除されず、光反射機能は維持されていた。
　また、得られた発光装置を発光させ、上面から出射してくる光の初期輝度（ｋｃｄ／ｍ２）を輝度計（ＢＭ－９、トプコンテクノハウス（株））を用いて測定した。また、ＬＥＤ点灯信頼性を、ＬＥＤに１００℃で２０ｍＡの定電流を流し、Ｖｆ値の変化が±０．３Ｖ以内であるという場合を「○」とし、Ｖｆ値の変化が±０．３Ｖを超えるという場合を「×」と評価した。得られた結果を表１に示す。
　　実施例２
　光反射性粒子として、絶縁被覆鱗片状銀粒子に代えて、平均粒径０．２μｍの二酸化チタン粒子（ＪＲ４０５、テイカ（株））を５０質量部使用する以外は実施例１と同様に光反射性絶縁性接着層フィルム、異方性導電接着層フィルムを作成し、更に、異方性導電フィルムを作成した。この異方性導電フィルムを使用し、実施例１と同様に発光ダイオード素子を、ガラスエポキシ基板に接続し、特性評価を行った。得られた結果を表１に示す。
　　比較例１
　異方性導電フィルムに代えて銀ペーストを使用して、発光ダイオードをガラスエポキシ基板に接続し、実施例１と同様に特性評価を行った。得られた結果を表１に示す。
　　比較例２
　光反射性絶縁性接着層フィルムを使用せずに、実施例１の異方性導電接着層フィルムそのものを異方性導電フィルムとして使用し、実施例１と同様に発光ダイオード素子を、ガラスエポキシ基板に接続し、特性評価を行った。得られた結果を表１に示す。
 
 
 
Figure JPOXMLDOC01-appb-T000001
　表１から解るように、実施例１の場合、絶縁被覆した鱗片状Ａｇ粒子を使用しているので、初期輝度は銀ペースト（比較例１）よりも高い輝度を示し、しかもＬＥＤ点灯信頼性も良好であった。また、実施例２の場合、ＴｉＯ２粒子を使用しているので、銀ペースト（比較例１）に匹敵する初期輝度を示し、しかもＬＥＤ点灯信頼性も良好であった。比較例２の場合には、光反射層を備えていないので、初期輝度に問題があった。
　本発明の異方性導電フィルムは、光反射性絶縁接着層と異方性導電接着層とが積層された構造を有する。このため、それを用いてＬＥＤ素子と基板とを異方性導電接続して製造された発光装置においては、ＬＥＤ素子が発した光のうち、基板側（即ち、ＬＥＤ素子の裏面側）に向かって発せられた光を、光反射性絶縁接着層で反射して表面側から出射させることができる。従って、発光装置の発光効率を低下させないようにできる。よって、本発明の異方性導電フィルムは、ＬＥＤ素子をフリップリップ実装する際に有用である。
１　光反射性絶縁接着層
２　異方性導電接着層
２１　基板
２２　接続端子
２３　ＬＥＤ素子
２４　ｎ電極
２５　ｐ電極
２６　バンプ
１００　異方性導電フィルム
２００　発光装置

Claims (7)

  1. 　光反射性絶縁接着層と異方性導電接着層とが積層されてなる異方性導電フィルムであって、該光反射性絶縁接着層が、絶縁性接着剤中に光反射性粒子が分散したものである異方性導電フィルム。
  2. 　光反射性粒子が、絶縁被膜で被覆された金属粒子である請求項１記載の異方性導電フィルム。
  3. 　金属粒子が、鱗片状銀粒子である請求項２記載の異方性導電フィルム。
  4. 　鱗片状金属粒子を被覆する絶縁被膜が、メタクリル酸メチルとメタクリル酸２－ヒドロキシエチルとのラジカル共重合体被膜である請求項２又は３記載の異方性導電フィルム。
  5. 　該絶縁被膜が、イソシアネート系架橋剤で架橋されている請求項４記載の異方性導電フィルム。
  6. 　基板上の接続端子と、発光ダイオード素子の接続用のバンプとの間に異方性導電フィルムを介し、該基板と該発光ダイオード素子とがフリップチップ実装されている発光装置であって、
    　該異方性導電フィルムが、光反射性絶縁接着層と異方性導電接着層とが積層されてなり、該光反射性絶縁接着層が、絶縁性接着剤中に光反射性粒子が分散してなる異方性導電フィルムである発光装置。
  7. 　該異方性導電フィルムの光反射性絶縁接着層が発光ダイオード素子側に配置されている請求項６記載の発光装置。
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US20110266578A1 (en) 2011-11-03
CN102334238B (zh) 2016-03-30
JP5402109B2 (ja) 2014-01-29
TW201032241A (en) 2010-09-01
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CN102334238A (zh) 2012-01-25
US8444882B2 (en) 2013-05-21

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