TWI478180B - Anisotropic conductive film and a light emitting device - Google Patents
Anisotropic conductive film and a light emitting device Download PDFInfo
- Publication number
- TWI478180B TWI478180B TW099105550A TW99105550A TWI478180B TW I478180 B TWI478180 B TW I478180B TW 099105550 A TW099105550 A TW 099105550A TW 99105550 A TW99105550 A TW 99105550A TW I478180 B TWI478180 B TW I478180B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- anisotropic conductive
- conductive film
- reflective
- insulating adhesive
- Prior art date
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- 239000002245 particle Substances 0.000 claims description 46
- 239000012790 adhesive layer Substances 0.000 claims description 30
- 239000010410 layer Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000853 adhesive Substances 0.000 claims description 19
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 239000002923 metal particle Substances 0.000 claims description 8
- 239000003431 cross linking reagent Substances 0.000 claims description 4
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 claims description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 3
- 239000012948 isocyanate Substances 0.000 claims description 2
- 150000002513 isocyanates Chemical class 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 239000002313 adhesive film Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- -1 imidazole compound Chemical class 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004840 adhesive resin Substances 0.000 description 4
- 229920006223 adhesive resin Polymers 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 150000008065 acid anhydrides Chemical class 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4805—Shape
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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Description
本發明係關於一種異向性導電膜及發光裝置。
目前使用發光二極體(LED)元件之發光裝置已被廣泛利用,舊型的發光裝置的構造如圖3所示,係具有以下構成:利用黏晶接著劑32將LED元件33連接於基板31上,其上方之p電極34與n電極35藉由金線37來打線接合於基板31之連接端子36,LED元件33整體係受透明模具樹脂38而密封。然而,圖3之發光裝置之情況,LED元件33所發出之光當中,朝上面側出射之400~500nm波長之光被金線37吸收,此外朝下面側出射之光的一部分受到黏晶接著劑32吸收,而有LED元件33發光效率降低的問題。
因此,如圖4所示,已提出將LED元件33以覆晶封裝之技術(專利文獻1)。該覆晶封裝技術中,於p電極34與n電極35分別形成有凸塊39,此外於LED元件33的凸塊形成面係設置有光反射層40,使p電極34與n電極35形成絕緣。此外,LED元件33與基板31係使用異向性導電糊41加以連接固定。因此,圖4之發光裝置中,自LED元件33上方出射之光不會被金線所吸收,自下方出射之光則幾乎被光反射層40反射而朝上方出射,故發光效率不會降低。
先前技術文獻
專利文獻1:日本專利特開平11-168235號公報
然而,專利文獻1之技術中必需藉由金屬蒸鍍法等將光反射層40設置於LED元件33上,以使p電極34與n電極35形成絕緣,而於製造上無可避免地存在成本增加的問題。
本發明之目的係為了解決以上習知技術之問題,而提供一種異向性導電膜,以及使用其之發光裝置,其可於使用發光二極體(LED)元件之發光裝置進行覆晶封裝之際,不需於LED元件上設置會招致製造成本增大之光反射層,且不會使發光效率降低。
本發明者發現,若使異向性導電膜具備光反射機能則可達成上述目的,以其具體透成而言,係將異向性導電膜設為2層構成,一層作為光反射性絕緣接著層,另一層作為異向性導電接著層,而完成本發明。
亦即,本發明提供一種異向性導電膜,係由光反射性絕緣接著層與異向性導電接著層積層而構成者;該光反射性絕緣接著層,係絕緣性接著劑中分散有光反射性粒子者。
此外,本發明亦提供一種發光裝置,係於基板上之連接端子與發光二極體元件之連接用凸塊之間夾設有異向性導電膜,且該基板與該發光二極體元件係以覆晶封裝著;該異向性導電膜,係由光反射性絕緣接著層與異向性導電接著層積層而構成者;該光反射性絕緣接著層,係絕緣性接著劑中分散有光反射性粒子而構成者。
本發明之異向性導電膜係具有由光反射性絕緣接著層與異向性導電接著層積層而成之構造。因此,於由使用其來將LED元件與基板進行異向性導電連接所製造之發光裝置中,LED元件發出之光當中朝基板側(亦即LED元件的背面側)發出之光會因光反射性絕緣接著層反射而從表面側出射。因此,發光裝置的發光效率不會降低。
參照圖式並對本發明進行詳細說明。
圖1係本發明之異向性導電膜100的截面圖。該異向性導電膜100係具有由光反射性絕緣接著層1與異向性導電接著層2積層而成之構造,該光反射性絕緣接著層1係於絕緣性接著劑中分散有光反射性粒子而成者。因此,對於異向性導電膜100,從光反射性絕緣接著層1側入射之光,雖會受到光反射性粒子特性之影響,基本上係反射至入射側。此外,從異向性導電接著層2側入射之光,即使其一部分於異向性導電接著層2中被吸收或散射,但多數仍藉由光反射性絕緣接著層1而反射,而自異向性導電接著層2出射。因此,可使得LED元件的發光效率不會降低。
本發明中,作為構成光反射性絕緣接著層1之絕緣性接著劑,可適當採用以往之用作異向性導電接著膜之絕緣性黏著樹脂者。例如,可於以脂環式環氧樹脂或加氫環氧樹脂等為主成分之環氧樹脂中,使用含酸酐、咪唑化合物、二氰等交聯劑之熱硬化性接著劑。此外,若考慮到構成光反射性絕緣接著層1之絕緣性接著劑與構成後述異向性導電接著層2之黏著劑之間之密合性等,則較佳為使用相同者。
作為光反射性粒子,可使用碳酸鈣、二氧化鈦、二氧化矽、氧化鋁等之金屬氧化物粒子;經絕緣被膜被覆之鎳、銀、鋁等之金屬粒子等。作為粒子的形狀,可列舉無定型、球狀、鱗片狀、針狀等,其中從光擴散效果的觀點而言又以球狀較佳;從全反射效果的觀點而言又以鱗片狀的形狀佳。從光反射率的觀點而言又以鱗片狀銀粒子特佳。
光反射性粒子的大小雖亦隨著形狀而有所不同,一般而言若過大,則有妨礙異向性導電粒子連接之虞;若過小,則不容易將光反射,故於球狀時之粒徑較佳為0.1~30μm、更佳為0.2~10μm;於鱗片狀時之長徑較佳為0.1~100μm、更佳為1~50μm,厚度較佳為0.01~10μm、更佳為0.1~5μm。此處光反射性粒子的大小,於經絕緣被覆時係包含其絕緣被覆之大小。
光反射性絕緣接著層1的層厚度,只要可獲得所需之光反射性,從連接可靠性的觀點而言較佳為薄者。通常為2~30μm。以該厚度範圍作為前提,光反射性絕緣接著層1中之絕緣性接著劑與光反射性粒子之配合比例雖隨著光反射性粒子的形狀而異,但當光反射性粒子為鱗片狀時,光反射性粒子相對於絕緣性接著劑100質量份較佳為1~200質量份、更佳為10~100質量份。
光反射性粒子經絕緣被膜被覆之金屬粒子,該絕緣被覆可使用各種絕緣性樹脂。從機械強度與透明性等之觀點而言可較佳使用丙烯酸系樹脂的硬化物。可較佳列舉:於過氧化苯甲醯等有機過氧化物等之自由基起始劑的存在下,由甲基丙烯酸甲酯與甲基丙烯酸2-羥乙酯進行自由基共聚合之樹脂被膜。此時,較佳為以2,4-甲苯二異氰酸酯等異氰酸酯系交聯劑所交聯者。此外,關於金屬氧化物粒子,從分散安定性的觀點而言較佳為經與金屬粒子相同之絕緣被膜所被覆者。
此外,作為金屬粒子,較佳為預先利用矽烷偶合劑將γ-環氧丙氧基或乙烯基等導入金屬表面。
作為構成本發明之異向性導電膜100之異向性導電接著層2,可使用與以往之異向性導電膜相同構成者,通常係於熱硬化性接著劑中分散有異向性導電連接用導電粒子。作為該熱硬化性接著劑,例如可列舉:於以脂環式環氧樹脂或加氫環氧樹脂等為主成分之環氧系樹脂中含有酸酐、咪唑化合物、二氰等交聯劑者。此外,作為異向性導電連接用導電粒子,可使用金、鎳等金屬粒子;於苯并胍胺樹脂等樹脂粒子的表面被覆有鎳等金屬之金屬被覆樹脂粒子等。
上述導電粒子為球形,若其粒徑過大則連接可靠性會降低,故較佳為1~20μm、更佳為3~10μm。
異向性導電接著層2的層厚,為了獲得所需之連接可靠性,通常為5~40μm。以該厚度範圍為前提時,異向性導電接著層2中之絕緣性接著劑與導電粒子之配合比例,導電粒子相對於絕緣性接著劑100質量份較佳為1~50質量份、更佳為10~25質量份。
本發明之異向性導電膜,可藉由以下說明的方式製造。首先,將光反射性粒子與絕緣性接著劑分散混合於甲苯等溶劑,並將其以可獲得所需厚度的方式塗佈於剝離處理後之PET膜,利用約80℃左右的溫度進行乾燥作成光反射性絕緣接著層膜。除此之外,亦將異向性導電連接用導電粒子與絕緣性接著劑分散混合於甲苯等溶劑,並將其以可獲得所需厚度的方式塗佈於剝離處理後之PET膜,利用約80℃左右的溫度進行乾燥作成異向性導電接著層膜。接著,藉由將兩膜進行疊合,隔著兩側之剝離膜,利用約40℃加壓的方式使膜一體化製得本發明之異向性導電膜。
接著,一邊參照圖2一邊對本發明之發光裝置進行說明。發光裝置200,係於基板21上之連接端子22與LED元件23的n電極24和p電極25所各別形成之連接用凸塊26之間夾設上述本發明之異向性導電膜100,該基板21與該LED元件23係以覆晶封裝。亦即,異向性導電膜100係由光反射性絕緣接著層1與異向性導電接著層2所構成之積層構造物,光反射性絕緣接著層1係絕緣性接著劑中分散有光反射性粒子而構成者。此時,雖以異向性導電膜100之光反射性絕緣接著層1配置於LED元件23側的方式較佳,但亦可配置於相對側。此外,視需要亦可利用包覆LED元件23整體的方式藉透明模具樹脂加以密封。
如上述構成之發光裝置200,其LED元件23所發出的光當中,朝基板21側所發出之光係經由異向性導電膜100之光反射性絕緣接著層1所反射,而自LED元件23之上方出射。因此,可防止發光效率的降低。
本發明之發光裝置200中之異向性導電膜100以外的構成(LED元件23、凸塊26、基板21、連接端子22等)可設為與以往之發光裝置相同的構成。此外,本發明之發光裝置200,除了使用異向性導電膜100之外,亦可利用以往之異向性導電連接技術來製造。
實施例
實施例1
(1a) 光反射性粒子的作成
於附攪拌機之燒瓶中投入鱗片狀銀離子(縱10μm、橫10μm、厚0.5μm)5g與甲苯50ml,一邊攪拌一邊於燒瓶中投入矽烷偶合劑(3-甲基丙烯醯氧基丙基三乙氧基矽烷)0.25g,於25℃攪拌60分鐘。接著,於該混合物中投入甲基丙烯酸甲酯2g、甲基丙烯酸-2-羥乙酯2g、過氧化苯甲醯0.04g、與2,4-甲苯二異氰酸酯1g,於80℃攪拌12小時,藉此製得作為光反射性粒子之絕緣被覆鱗片狀銀粒子。含有絕緣被覆之光反射性粒子的平均大小為縱10μm、橫10μm、厚0.5μm。
(1b) 光反射性絕緣性接著層膜的製作
於加氫環氧樹脂(YX8000,JER(股))中添加酸酐(MH-700,新日本理化(股))、咪唑(2MZA,四國化成(股)),藉此調製絕緣性黏著劑樹脂。將製得之絕緣性黏著劑樹脂100質量份與絕緣被覆鱗片狀銀粒子50質量份分散混合於甲苯100ml,再將所得之混合物塗佈於剝離聚對酞酸乙二酯(PET)膜上,使乾燥後之厚度為10μm,於80℃乾燥5分鐘,藉此製得光反射性絕緣性接著層膜。
(1c) 異向性導電接著層膜的製作
將與前述(1b)相同之絕緣性黏著劑樹脂100質量份與鍍銀被覆樹脂粒子(粒徑5μm)20質量份分散混合於甲苯100ml,再將所得之混合物塗佈於剝離聚對酞酸乙二酯(PET)膜上,使乾燥後之厚度為10μm,於80℃乾燥5分鐘,藉此製得異向性導電接著層膜。
(1d) 異向性導電膜的製作
將製得之光反射性絕緣性接著層膜與異向性導電接著層膜進行疊合,將兩側之PET膜於40℃加壓10秒,藉此將兩膜積層而製得異向性導電膜。
<特性評價>
使用200℃加熱頭(heating head),將發光二極體元件(當If=20mA時之特性:Vf=3.3V、光度=150mcd、主波長=470nm)以1Kg/chip加熱加壓20秒的方式,隔著異向性導電膜而連接於玻璃環氧基板上。此時,發光二極體元件的凸塊部分會有壓力,故光反射性絕緣接著層膜的接著劑會被排開,而藉由異向性導電接著層之導電粒子使得發光二極體元件與玻璃環氧基板之間得以導通。此外,凸塊以外的光反射性絕緣接著層並不會被排開,而維持光反射機能。
此外,使所得之發光裝置發光,將由上方出射之光的初期亮度(kcd/m2
)利用亮度計(BM-9,Topcon Technohouse(股))進行測定。此外,LED亮燈可靠性,係將LED於100℃流通20mA的定電流,Vf值的變化為±0.3V以內的情形評價為「○」;Vf值的變化超過±0.3V的情形評價為「×」。所得之結果示於表1。
實施例2
光反射性粒子方面係使用平均粒徑0.2μm之二氧化鈦粒子(JR405,Tayca(股))50質量份來取代絕緣被覆鱗片狀銀粒子,除此之外係以與實施例1相同的方式作成光反射性絕緣性接著層膜、異向性導電接著層膜,進而作成異向性導電膜。使用該異向性導電膜,以與實施例1相同的方式將發光二極體元件連接於玻璃環氧基板上,進行特性評價。所得之結果示於表1。
比較例1
使用銀糊料代替異向性導電膜,將發光二極體連接於玻璃環氧基板上,以與實施例1相同的方式進行特性評價。所得之結果示於表1。
比較例2
不使用光反射性絕緣性接著層膜,僅使用實施例1之異向性導電接著層膜來作為異向性導電膜,並以與實施例1相同的方式將發光二極體元件連接於玻璃環氧基板上,進行特性評價。所得之結果示於表1。
由表1可知,實施例1的情形因使用絕緣被覆之鱗片狀Ag粒子,故初期亮度顯示較銀糊料(比較例1)為高之亮度,且LED亮燈可靠性亦佳。此外,實施例2的情形因使用TiO2
粒子,故顯示出不遜於銀糊料(比較例1)之初期亮度,且LED亮燈可靠性亦佳。比較例2的情形因未具備光反射層,故有初期亮度的問題。
本發明之異向性導電膜係具有由光反射性絕緣接著層與異向性導電接著層積層而成之構造。因此,於由使用其之LED元件與基板進行異向性導電連接所製造之發光裝置中,可使LED元件發出之光當中朝基板側(亦即LED元件的背面側)發出之光因光反射性絕緣接著層反射而從表面側出射。因此,可使發光裝置的發光效率不會降低。如上所述,本發明之異向性導電膜於LED元件進行覆晶封裝之際可有效加以利用。
1...光反射性絕緣接著層
2...異向性導電接著層
21...基板
22...連接端子
23...LED電極
24...n電極
25...p電極
26...凸塊
100...異向性導電膜
200...發光裝置
圖1係本發明之異向性導電膜的截面圖。
圖2係本發明之發光裝置的截面圖。
圖3係以往之發光裝置的截面圖。
圖4係以往之發光裝置的截面圖。
1...光反射性絕緣接著層
2...異向性導電接著層
Claims (7)
- 一種異向性導電膜,係由光反射性絕緣接著層與異向性導電接著層積層而構成者;該光反射性絕緣接著層,係絕緣性接著劑中分散有光反射性粒子者。
- 如申請專利範圍第1項之異向性導電膜,其中光反射性粒子係被覆有絕緣被膜之金屬粒子。
- 如申請專利範圍第2項之異向性導電膜,其中金屬粒子為鱗片狀銀粒子。
- 如申請專利範圍第2或3項之異向性導電膜,其中被覆鱗片狀金屬粒子之絕緣被膜係甲基丙烯酸甲酯與甲基丙烯酸2-羥乙酯所構成之自由基共聚物被膜。
- 如申請專利範圍第4項之異向性導電膜,其中該絕緣被膜係藉由異氰酸酯系交聯劑而交聯著。
- 一種發光裝置,係於基板上之連接端子與發光二極體元件之連接用凸塊之間夾設有異向性導電膜,且該基板與該發光二極體元件係以覆晶封裝著;該異向性導電膜,係由光反射性絕緣接著層與異向性導電接著層積層而構成者;該光反射性絕緣接著層,係絕緣性接著劑中分散有光反射性粒子而構成者。
- 如申請專利範圍第6項之發光裝置,其中該異向性導電膜之光反射性絕緣接著層係配置於發光二極體元件側。
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