WO2010079746A1 - 試験装置 - Google Patents
試験装置 Download PDFInfo
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- WO2010079746A1 WO2010079746A1 PCT/JP2010/000044 JP2010000044W WO2010079746A1 WO 2010079746 A1 WO2010079746 A1 WO 2010079746A1 JP 2010000044 W JP2010000044 W JP 2010000044W WO 2010079746 A1 WO2010079746 A1 WO 2010079746A1
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- test
- high voltage
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- performance board
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2889—Interfaces, e.g. between probe and tester
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06777—High voltage probes
Definitions
- the present invention relates to a test apparatus.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2007-205792
- the pin for transmitting a high voltage signal must be arranged at a predetermined distance from the pin for transmitting a low voltage signal. For this reason, when the number of high voltage pins increases, the area where the low voltage pins can be arranged is limited, and the number of pins provided on the probe substrate cannot be secured.
- a test module that generates a signal is provided apart from the semiconductor device.
- a test head for storing a test module and a prober for mounting a semiconductor device are provided apart from each other, and a signal is transmitted by connecting the test head and the prober with a cable.
- the accuracy of the test using the low voltage signal deteriorates due to the resistance component and capacitance component of the cable.
- the accuracy of a test using a low-voltage high-frequency signal is deteriorated.
- a test apparatus for testing a device under test which is disposed opposite to the device under test and includes a module for testing the device under test.
- the high voltage pin provides a test device that is placed only in one of the two halved areas of the probe assembly.
- FIG. 1 is a diagram illustrating an outline of a test apparatus 100 according to an embodiment. It is the enlarged view to which the structure from the test head 22 to the probe card 50 was expanded. An example of a top view of the probe assembly 60 viewed from the device under test 200 side is shown. 6 is a diagram illustrating an example of pin arrangement in a high voltage pin area 66. FIG. It is a figure explaining the structure which confirms the connection from the high voltage module 80 to the probe card 50. FIG. An example of a top view of the switching unit 24 viewed from the device under test 200 side is shown.
- FIG. 1 is a diagram showing an outline of a test apparatus 100 according to the embodiment.
- the test apparatus 100 is an apparatus for testing a device under test 200 such as a semiconductor device, and includes a prober 10, a main frame 12, a cable 14, a drive unit 16, a test head 22, a frame unit 30, a high voltage module 80, a performance board. 40, a probe assembly 60, and a probe card 50.
- the device under test 200 may be a device formed on a wafer.
- the device under test 200 may be an SOC device.
- the prober 10 places the device under test 200 at a predetermined position.
- the prober 10 may mount a plurality of devices under test 200.
- the probe card 50 is arranged to face the device under test 200 placed on the prober 10 and is electrically connected to the device under test 200.
- the probe card 50 is fixed to the test head 22 via the probe assembly 60, the performance board 40, the frame unit 30, and the switching unit 24.
- the performance board 40 and the frame part 30 are integrally fixed by screws or the like. Thereby, the rigidity of the performance board 40 is improved.
- the driving unit 16 moves the test head 22.
- the drive unit 16 moves the test head 22 to a position facing the device under test 200 as shown in FIG. Connect to.
- the test head 22 is disposed to face the device under test 200.
- the test head 22 stores a test module 26 that performs a low voltage test of the device under test 200.
- a switching unit 24 shown in FIG. 2 is provided on the surface of the test head 22.
- a high voltage module 80 that performs a higher voltage test than the test module 26 is fixed to the switching unit 24 with screws or the like. Thereby, the high voltage module 80 is fixed to the test head 22.
- the high voltage module 80 may be a module that can generate a signal having a higher voltage than the test module 26.
- the test module 26 can generate a signal of about 0 to 20V
- the high voltage module 80 can generate a signal of about 0 to 2 kV.
- the high voltage module 80 may be capable of generating a voltage according to the withstand voltage specification of the device under test 200 in order to test the withstand voltage of the device under test 200.
- the high voltage module 80 may be provided on the surface of the switching unit 24 that faces the device under test 200.
- the main frame 12 controls the device under test 200 by controlling these modules via the cable 14.
- the frame unit 30 is fixed to the surface of the switching unit 24 that faces the device under test 200.
- the frame unit 30 is fixed integrally with the performance board 40 to hold the performance board 40 at a position facing the device under test 200.
- the performance board 40 is disposed between the device under test 200 and the switching unit 24. More specifically, the performance board 40 is disposed between the probe assembly 60 and the frame part 30.
- the probe assembly 60 is disposed between the device under test 200 and the performance board 40. More specifically, the probe assembly 60 is provided between the probe card 50 and the performance board 40 and electrically connects them. With such a configuration, the test head 22 is electrically connected to the device under test 200 via the probe card 50, and can perform a low voltage test and a high voltage test of the device under test 200. Further, since the test module 26 is arranged in the vicinity of the device under test 200, the device under test 200 can be tested with high accuracy without repeatedly performing the low voltage test. For this reason, the test time can be shortened.
- FIG. 2 is an enlarged view in which the configuration from the test head 22 to the probe card 50 is enlarged.
- the test apparatus 100 of this example further includes a switching unit 24 between the test head 22 and the frame unit 30.
- the frame unit 30 is detachably attached to the switching unit 24.
- the high voltage module 80 is fixed to the test head 22 via the switching unit 24 with screws or the like.
- the test head 22 stores a plurality of test modules 26.
- the switching unit 24 switches which pin of the device under test 200 is connected by switching the transmission path 28 through which each test module 26 transmits the inside of the switching unit 24.
- the switching unit 24 may include a storage unit that stores a plurality of transmission paths 28 and a plurality of changeover switches.
- the high voltage module 80 is fixed to the surface facing the device under test 200 in the switching unit 24.
- the frame 30 may have a cylindrical shape in which one opening is formed on the switching unit 24 side and the other opening is formed on the performance board 40 side. As described above, the frame unit 30 may be integrated with the performance board 40.
- the high voltage module 80 may be disposed in a region surrounded by the frame unit 30 on the surface of the switching unit 24. Note that the outer wall of the high voltage module 80 preferably has a higher withstand voltage than the voltage generated by the high voltage module 80.
- a low voltage signal is transmitted between the test module 26 and the probe assembly 60 via the pattern line in the transmission path 28 and the performance board 40.
- the transmission line 28 may pass through the wall of the frame unit 30 and be electrically connected to the performance board 40.
- the transmission path 28 may be a path including a spring pin that connects between the switching unit 24 and the performance board 40.
- a high voltage signal is transmitted between the high voltage module 80 and the probe assembly 60 via the pressure cable 32, the voltage connector 34, and the via of the performance board 40.
- the withstand voltage of the withstand voltage cable 32 and the withstand voltage connector 34 is preferably higher than the voltage generated by the high voltage module 80.
- the low voltage signal and the high voltage signal may be an analog signal, a digital signal, power supply power, or the like.
- the performance board 40 transmits the received low-voltage signal through the pattern wiring, vias, and electrodes.
- the performance board 40 transmits the received high voltage signal through the via.
- the withstand voltage cable 32 may be soldered to the via electrode of the performance board 40.
- the high voltage signal is preferably transmitted through the performance board 40 without passing through the pattern wiring.
- the via electrode connected to the withstand voltage cable 32 corresponds to the maximum voltage level generated by the high voltage module 80 from the via electrode that transmits the low voltage signal, the pattern wiring, and other elements.
- the creepage distance is set apart.
- the high-voltage via electrode may be provided with a creepage distance of about 1 mm per 100 V of voltage generated by the high-voltage module 80. That is, when the high voltage module 80 generates a maximum of 1500 V, the high voltage via electrode is provided with a creepage distance of about 15 to 16 mm with respect to the low voltage signal electrode, pattern wiring, element, and the like. It is done.
- the probe assembly 60 is provided with a plurality of pins 62 that are in contact with a plurality of electrodes of the probe card 50 and the performance board 40 on respective surfaces facing the probe card 50 and the performance board 40.
- the pin 62 may be a spring pin, for example.
- the probe assembly 60 is connected to both the low voltage signal electrode and the high voltage signal electrode of the performance board 40.
- Each pin 62-1 of the probe assembly 60 is connected to a corresponding pin 62-2 provided on the opposite surface via a via 64.
- the probe assembly 60 transmits the low voltage signal between the test module 26 and the probe card 50 and the high voltage signal between the high voltage module 80 and the probe card 50 in parallel.
- the pin 62 that transmits a high voltage signal is provided with a creepage distance corresponding to the maximum voltage level generated by the high voltage module 80 from the pin 62 that transmits a low voltage signal.
- a high voltage signal can be transmitted between the high voltage module 80 and the probe card 50 while ensuring a withstand voltage. Therefore, even in a test apparatus configured to place the test head 22 near the device under test 200 using the probe assembly 60 and the probe card 50, the high voltage module 80 can be provided in the test head 22. For this reason, a high voltage test and a highly accurate low voltage test can be made compatible.
- the probe card 50 is provided between the probe assembly 60 and the device under test 200 and transmits a low voltage signal and a high voltage signal in parallel.
- the probe card 50 has probe pins 52 that are electrically connected to the terminals of the device under test 200. In the probe card 50 as well, as with the performance board 40 and the probe assembly 60, it is preferable to ensure the withstand voltage of the path for transmitting the high voltage signal.
- the test apparatus 100 can replace the performance board 40, the probe assembly 60, and the probe card 50.
- the performance board 40 it is not preferable to provide the low voltage signal pin 62 around the high voltage signal pin 62 of the probe assembly 60 as described above.
- the probe assembly 60 corresponding to both the high voltage test and the low voltage test, there may be a case where it is not possible to secure a sufficient area for arranging the low voltage signal pins 62.
- the performance board 40 is the same. In such a case, it can be considered to replace the performance board 40 with a dedicated low voltage test.
- the test apparatus 100 of this example connects the high voltage module 80 and the performance board 40 via the pressure resistant connector 34. For this reason, the performance board 40 or the like can be replaced by disconnecting the pressure-resistant connector 34. Further, the pressure-resistant connector 34 is fixed to a surface of the performance board 40 that faces the probe assembly 60.
- the pressure-resistant cable 32 includes a module side cable 32-1 and a board side cable 32-2.
- the module side cable 32-1 is electrically connected to the high voltage module 80.
- the board side cable 32-2 is electrically connected to the probe assembly 60 through the performance board 40.
- the pressure-resistant connector 34 includes a module side connector 34-1 and a board side connector 34-2.
- the module-side connector 34-1 is provided without being fixed to the frame portion 30, is electrically connected to the module-side cable 32-1, and engages with the board-side connector 34-2.
- the board side connector 34-2 is fixed to the performance board 40 and is electrically connected to the board side cable 32-2. With such a configuration, the pressure-resistant connector 34 can be fixed to the performance board 40 and the performance board 40 can be attached and detached.
- the pressure-resistant connector 34 is preferably fixed to the surface of the performance board 40 on the probe assembly 60 side.
- the module-side cable 32-1 may be electrically connected to the high voltage module through a through hole formed in the side surface of the frame portion 30.
- the board side cable 32-2 may be directly connected to the via electrode on the surface of the performance board 40 on the test head 22 side through the through hole 48 formed in the performance board 40. As a result, a high voltage signal can be transmitted without using pattern wiring in the performance board 40.
- the probe assembly 60 and the probe card 50 may be arranged to be biased with respect to the center of the performance board 40.
- the pressure-resistant cable 32, the pressure-resistant connector 34, and the through hole 48 may be provided on the surface of the performance board 40 at positions where the probe assembly 60 and the probe card 50 are not disposed.
- FIG. 3 shows an example of a top view of the probe assembly 60 as seen from the device under test 200 side.
- the probe assembly 60 is provided with a plurality of low voltage pin areas 65 and a plurality of high voltage pin areas 66.
- Each low voltage pin area 65 is provided with a low voltage pin for transmitting a low voltage signal.
- the low voltage signal is a signal of about 15 V, for example, and may be a signal generated by the test module 26. That is, the low voltage pin in the low voltage pin area 65 may transmit a signal to and from the test module 26.
- each high voltage pin area 66 a high voltage pin for transmitting a high voltage signal is arranged.
- the high voltage signal is a signal of about 1500 V, for example, and may be a signal generated by the high voltage module 80. That is, the high voltage pin in the high voltage pin area 66 may transmit a signal to and from the high voltage module 80.
- the low voltage pin area 65 a high voltage pin for transmitting a high voltage signal is not arranged.
- both low voltage pins and high voltage pins may be arranged.
- the probe assembly 60 when the probe assembly 60 is divided into two regions, all the low voltage pin areas 65 are arranged in one region A and all the high voltage pin areas 66 are arranged only in the other region B. It is preferred that That is, the high voltage pin is disposed only in one of the region A and the region B.
- the region A and the region B indicate regions obtained by dividing the surface of the probe assembly 60 into two equal parts.
- the high voltage pins are preferably arranged with a predetermined creepage distance from the low voltage pins. Therefore, by collecting the high voltage pins in one region, the pins can be arranged efficiently. it can.
- the low voltage pin area 65 and the high voltage pin area 66 may be provided according to the number of devices under test 200 to be tested simultaneously.
- FIG. 4 is a diagram showing an example of pin arrangement of the high voltage pin area 66.
- a plurality of low voltage pins 68 and a plurality of high voltage pins 67 are arranged in the high voltage pin area 66 of this example.
- the plurality of low voltage pins 68 are arranged at a predetermined constant interval d from each other.
- the low voltage pins 68 are also arranged at the intervals in the low voltage pin area 65. Since the low voltage pin 68 is also arranged in the high voltage pin area 66, the low voltage pin 68 is arranged in both the region A and the region B.
- the high voltage pin 67 is preferably disposed substantially at the center of the high voltage pin area 66 so as to ensure a predetermined creepage distance D with respect to the low voltage pin 68.
- the approximate center of the high voltage pin area 66 refers to a position where the distance between each high voltage pin 67 and each low voltage pin 68 is equal to or greater than a predetermined creepage distance D.
- the creeping distance D is larger than a certain interval at which the plurality of low voltage pins 68 are arranged.
- the low voltage pin 68 is disposed on the periphery of the high voltage pin area 66 on condition that a creepage distance D from the high voltage pin area 66 is ensured.
- a ground pin, a connection confirmation pin, or the like may be provided.
- the creepage distance D may be about 1 mm per maximum voltage 100 V generated by the high voltage module 80. That is, when the high voltage module 80 generates a maximum of 1500 V, the creepage distance D is about 15 to 16 mm.
- the interval d at which the low voltage pins 68 are arranged may be about 1 mm, for example.
- each high voltage pin 67 may be arranged such that the distance from at least one other high voltage pin 67 is d. That is, the high voltage pins 67 may be arranged at the same interval as the low voltage pins 68. Thus, by arranging the high voltage pins 67 together, the pins can be efficiently arranged on the probe assembly having a predetermined area.
- FIG. 5 is a diagram for explaining a configuration for confirming the connection from the high voltage module 80 to the probe card 50.
- the performance board 40 is provided with a plurality of electrodes 42 connected to the plurality of pressure-resistant cables 32.
- Each electrode 42 is electrically connected to a corresponding electrode 54 provided on the probe card 50 via a probe assembly 60.
- each electrode 42 is connected to an electrode 44 on the opposite surface of the performance board 40 via a via 46.
- the electrode 44 is connected to the connection confirmation pin 69-1 of the probe assembly 60.
- the connection confirmation pin 69-1 may be provided at the peripheral edge of the high voltage pin area 66.
- connection confirmation pin 69-1 is connected to the connection confirmation pin 69-2 on the opposite surface of the probe assembly 60 through the via 64.
- the connection confirmation pin 69-2 is connected to the electrode 54 of the probe card 50.
- the electrode 54 is connected to the electrode 56 on the opposite surface of the probe card 50 through the via 55.
- the probe card 50 is provided with a pattern wiring 58 that electrically connects the two electrodes 56 to each other. By electrically connecting the two electrodes 56 to each other, a loopback path for looping back a signal given to the performance board 40 to the performance board 40 via the probe assembly 60 and the probe card 50 is formed.
- the high voltage module 80 outputs a connection confirmation signal from a predetermined electrode 42 of the performance board 40 to the loopback path, and the high voltage test is performed on condition that the connection confirmation signal is looped back from the corresponding electrode 42. To start. With such a configuration, a high voltage test can be performed safely.
- FIG. 6 shows an example of a top view of the switching unit 24 viewed from the device under test 200 side.
- the integrated frame unit 30 and performance board 40 are fixed to the upper surface of the switching unit 24.
- the frame unit 30 may be provided along the periphery of the switching unit 24.
- the high voltage module 80 is disposed in a region surrounded by the frame unit 30.
- a depression 82 is formed on the surface of the switching unit 24 in a region where the high voltage module 80 is provided. Thereby, a larger high voltage module 80 can be installed. Further, the transmission path 28 described above may pass through the region 27 inside the wall of the frame portion 30.
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Abstract
Description
特許文献1 特開2007-205792号公報
Claims (15)
- 被試験デバイスを試験する試験装置であって、
前記被試験デバイスと対向して配置され、前記被試験デバイスを試験するモジュールが設けられるテストヘッドと、
前記テストヘッドおよび前記被試験デバイスの間に配置されて信号を伝送するプローブアセンブリと
を備え、
前記プローブアセンブリには、
互いに所定の間隔で配置される複数の低電圧ピンと、
前記複数の低電圧ピンにおけるそれぞれの低電圧ピンとの距離が前記所定の間隔よりも大きくなるように配置され、前記低電圧ピンよりも高い電圧の信号を伝送する複数の高電圧ピンと
が設けられ、
前記複数の高電圧ピンにおけるそれぞれの高電圧ピンは、前記プローブアセンブリの面を2等分した領域のいずれか一方にのみ配置される試験装置。 - それぞれの前記高電圧ピンは、少なくとも1つの他の前記高電圧ピンとの距離が、前記所定の間隔となるように配置される
請求項1に記載の試験装置。 - 前記低電圧ピンは、前記プローブアセンブリの面を2等分した領域の双方に配置される
請求項1に記載の試験装置。 - 前記プローブアセンブリの面には、前記高電圧ピンおよび前記低電圧ピンが配置される高電圧ピンエリアが設けられ、
前記高電圧ピンエリアにおいて、前記高電圧ピンは略中央に配置され、前記低電圧ピンは周縁部に配置される
請求項2に記載の試験装置。 - 前記プローブアセンブリの面を2等分した領域の一方に、前記高電圧ピンエリアが複数設けられる
請求項4に記載の試験装置。 - 前記テストヘッドは、低電圧信号を出力して前記被試験デバイスの低電圧試験を行う試験モジュール、および、前記低電圧信号より電圧の高い高電圧信号を出力して前記被試験デバイスの高電圧試験を行う高電圧モジュールが設けられ、
前記高電圧ピンは、前記高電圧モジュールに接続される
請求項2に記載の試験装置。 - 前記被試験デバイスおよび前記テストヘッドの間に配置され、前記試験モジュールおよび前記被試験デバイスの間の信号を伝送するパフォーマンスボードを更に備え、
前記プローブアセンブリは、前記被試験デバイスおよび前記パフォーマンスボードの間に配置される
請求項6に記載の試験装置。 - 前記高電圧モジュールおよび前記プローブアセンブリは、耐圧ケーブルを介して電気的に接続され、
前記試験モジュールおよび前記プローブアセンブリは、前記パフォーマンスボードにおけるパターン配線を介して電気的に接続される
請求項7に記載の試験装置。 - 前記耐圧ケーブルは、前記パフォーマンスボードに固定された耐圧コネクタを介して、前記高電圧モジュールと、前記プローブアセンブリとを電気的に接続する
請求項8に記載の試験装置。 - 前記耐圧ケーブルは、
前記パフォーマンスボードに電気的に接続されるボード側ケーブルと、
前記高電圧モジュールに電気的に接続されるモジュール側ケーブルと
を有し、
前記耐圧コネクタは、
前記パフォーマンスボードに固定され、前記ボード側ケーブルと電気的に接続されるボード側コネクタと、
前記パフォーマンスボードに固定されずに設けられ、前記モジュール側ケーブルと電気的に接続され、前記ボード側コネクタと嵌合するモジュール側コネクタと
を有する請求項9に記載の試験装置。 - 前記モジュール側ケーブルは、前記パフォーマンスボードと一体に形成されたフレーム部の側面に設けられた貫通孔を通って、前記高電圧モジュールと電気的に接続される
請求項10に記載の試験装置。 - 前記高電圧モジュールは、前記パフォーマンスボードと対向する前記テストヘッドの表面に設けられる
請求項11に記載の試験装置。 - 前記テストヘッドの前記表面に設けられ、前記パフォーマンスボードを載置するフレーム部を更に備え、
前記高電圧モジュールは、前記テストヘッドの前記表面において前記フレーム部により囲まれる領域に設けられる
請求項12に記載の試験装置。 - 前記テストヘッドの前記表面には、前記高電圧モジュールが設けられる領域に窪みが形成される
請求項13に記載の試験装置。 - 前記被試験デバイスに接触するプローブピンが設けられ、前記プローブアセンブリおよび前記被試験デバイスの間で信号を伝送するプローブカードを更に備え、
前記パフォーマンスボードには、複数の前記耐圧ケーブルと接続される複数の電極が設けられ、
前記パフォーマンスボードのそれぞれの電極は、前記プローブカードに設けられた対応する電極に、前記プローブアセンブリを介して電気的に接続され、
前記プローブカードには、前記プローブカードの2つの電極どうしを電気的に接続することで、前記パフォーマンスボードに与えられた信号を、前記プローブアセンブリおよび前記プローブカードを介して前記パフォーマンスボードにループバックするループバック経路を形成するパターン配線が設けられ、
前記高電圧モジュールは、前記パフォーマンスボードから前記ループバック経路に接続確認用信号を出力し、前記接続確認用信号がループバックされたことを条件として、高電圧の試験を開始する
請求項10に記載の試験装置。
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CN201080004196.1A CN102272612B (zh) | 2009-01-08 | 2010-01-06 | 测试装置 |
JP2010545745A JP5438691B2 (ja) | 2009-01-08 | 2010-01-06 | 試験装置 |
DE112010000706.3T DE112010000706B4 (de) | 2009-01-08 | 2010-01-06 | Prüfvorrichtung |
US13/118,475 US8829935B2 (en) | 2009-01-08 | 2011-05-30 | Test apparatus |
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US13/118,475 Continuation US8829935B2 (en) | 2009-01-08 | 2011-05-30 | Test apparatus |
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US9348492B1 (en) * | 2011-04-22 | 2016-05-24 | Angel A. Penilla | Methods and systems for providing access to specific vehicle controls, functions, environment and applications to guests/passengers via personal mobile devices |
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JP2008300481A (ja) * | 2007-05-30 | 2008-12-11 | Micronics Japan Co Ltd | 半導体検査装置 |
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DE112010000706B4 (de) | 2016-07-21 |
CN102272612A (zh) | 2011-12-07 |
US8829935B2 (en) | 2014-09-09 |
US20120133382A1 (en) | 2012-05-31 |
JPWO2010079746A1 (ja) | 2012-06-21 |
CN102272612B (zh) | 2013-07-24 |
DE112010000706T5 (de) | 2012-09-27 |
JP5438691B2 (ja) | 2014-03-12 |
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