WO2010061468A1 - 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器及び電波時計 - Google Patents
圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器及び電波時計 Download PDFInfo
- Publication number
- WO2010061468A1 WO2010061468A1 PCT/JP2008/071644 JP2008071644W WO2010061468A1 WO 2010061468 A1 WO2010061468 A1 WO 2010061468A1 JP 2008071644 W JP2008071644 W JP 2008071644W WO 2010061468 A1 WO2010061468 A1 WO 2010061468A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- piezoelectric vibrator
- bonding
- bonding film
- cavity
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 204
- 238000000034 method Methods 0.000 claims abstract description 48
- 238000010438 heat treatment Methods 0.000 claims abstract description 41
- 239000011521 glass Substances 0.000 claims abstract description 17
- 238000002844 melting Methods 0.000 claims abstract description 17
- 238000000605 extraction Methods 0.000 claims description 46
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 19
- 229910052737 gold Inorganic materials 0.000 claims description 19
- 238000005304 joining Methods 0.000 claims description 8
- 230000006837 decompression Effects 0.000 claims description 4
- 230000008018 melting Effects 0.000 abstract description 9
- 230000010355 oscillation Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 77
- 230000008569 process Effects 0.000 description 32
- 238000010586 diagram Methods 0.000 description 21
- 230000005284 excitation Effects 0.000 description 19
- 238000004891 communication Methods 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 235000014676 Phragmites communis Nutrition 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000005361 soda-lime glass Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 210000000707 wrist Anatomy 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000005433 ionosphere Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Definitions
- the present invention provides a method for manufacturing a surface mount type (SMD) piezoelectric vibrator in which a piezoelectric vibrating piece is sealed in a cavity formed between two bonded substrates, and the manufacturing method.
- SMD surface mount type
- the present invention relates to a piezoelectric vibrator, an oscillator having the piezoelectric vibrator, an electronic device, and a radio timepiece.
- a piezoelectric vibrator using a crystal or the like as a timing source such as a time source or a control signal, a reference signal source, or the like is used in a mobile phone or a portable information terminal device.
- Various piezoelectric vibrators of this type are known, and one of them is a surface-mount type piezoelectric vibrator.
- As this main piezoelectric vibrator a three-layer structure type in which a piezoelectric substrate on which a piezoelectric vibrating piece is formed is joined so as to be sandwiched from above and below by a base substrate and a lid substrate is known. In this case, the piezoelectric vibrating piece is accommodated in a cavity (sealed chamber) formed between the base substrate and the lid substrate.
- This type of piezoelectric vibrator has a two-layer structure in which a base substrate and a lid substrate are directly joined, and a piezoelectric vibrating piece is accommodated in a cavity formed between the two substrates.
- This two-layer structure type piezoelectric vibrator is excellent in that it can be made thinner than the three-layer structure, and is preferably used.
- the piezoelectric vibrator includes a hermetic container configured by stacking a plate-shaped lid member (lid substrate) and a base member (base substrate) in the thickness direction, and a piezoelectric vibrating piece provided in the hermetic container.
- a drawer that is provided on the overlap surface (joint surface) of the lid member and is electrically connected to the piezoelectric vibrating piece via the connection portion and extends the connection portion to the edge of the overlap surface of the lid member
- the piezoelectric vibrator is provided with an insulating film between at least the extraction electrode and the bonding film, between the overlapping surface of the lid member and the overlapping surface of the base member.
- the conventional piezoelectric vibrator and the manufacturing method thereof still have the following problems.
- a bonding film used for anodic bonding is formed by photolithography.
- an apparatus required for performing this photolithography is expensive, it is expensive to bond the lid member and the base member by anodic bonding. There is a problem of hanging.
- the surface of the insulating film is flat. Therefore, there is a problem that it takes more time to flatten the insulating film.
- the present invention has been made in view of the above-described circumstances, and an object thereof is a two-layer structure type surface mount type piezoelectric vibrator that can be easily manufactured at low cost, and the piezoelectric vibrator. It is to provide a manufacturing method. Another object is to provide an oscillator, an electronic device, and a radio timepiece having the piezoelectric vibrator.
- a method of manufacturing a piezoelectric vibrator according to the present invention includes a package configured by stacking a first substrate and a second substrate so as to form a cavity therebetween; A lead electrode formed so as to be drawn from the cavity to the outer edge of the first substrate; and a piezoelectric element sealed in the cavity and electrically connected to the lead electrode in the cavity
- a method of manufacturing a piezoelectric vibrator comprising: a vibrating piece; and an external electrode formed on an outer surface of the package and electrically connected to the extraction electrode outside the cavity, A bonding film forming step of forming a bonding film for bonding both substrates with low melting point glass on at least one of the second substrate and the second substrate; and the piezoelectric vibration on the extraction electrode formed on the first substrate
- the bonding film is formed of the low melting point glass in the bonding film forming step. For this reason, it becomes possible to form a bonding film by, for example, screen printing, and an expensive apparatus required for photolithography used in the prior art in the process of forming the bonding film is not required. Can be manufactured at cost. Further, in the bonding step, the first and second substrates are overlapped with each other so as to sandwich the bonding film while heating the bonding film to the bonding temperature, thereby bonding both substrates via the bonding film. .
- both substrates are bonded by anodic bonding
- both substrates are bonded without applying a voltage to the bonding film, so that there is no need to provide an insulating film between the bonding film and the extraction electrode. Therefore, the piezoelectric vibrator can be easily manufactured as compared with the case where the insulating film is formed as in the prior art.
- the piezoelectric vibrating piece may be bump-bonded to the extraction electrode by a gold bump.
- the piezoelectric vibrating piece and the lead electrode are bump-bonded by the gold bump, the conduction between the two is ensured and a high-quality piezoelectric vibrator can be manufactured.
- gold has a higher melting point than the conductive adhesive or the like conventionally used for mounting the piezoelectric vibrating piece, even when the bonding film is heated to the bonding temperature in the bonding process, The piezoelectric vibrating piece can be reliably supported without being affected, and a higher quality piezoelectric vibrator can be manufactured.
- a charging step of charging the first substrate and the second substrate into a vacuum chamber in which an internal pressure can be controlled A heating step for heating the bonding film after the mounting step; and a pressure reducing step for reducing the pressure inside the vacuum chamber after the charging step.
- the bonding step includes the vacuum after the heating step and the pressure reducing step. It may be carried out inside the room.
- the decompression process is performed after the heating process, even if the outgas is released into the vacuum chamber by performing the heating process after the charging process, the outgas can be removed from the inside of the vacuum chamber.
- the above-described effects can be achieved more reliably.
- the bonding temperature may be 300 ° C. or higher.
- the bonding temperature is 300 ° C. or higher
- a reflow method is used and heating is involved.
- the piezoelectric vibrator according to the present invention includes a package in which a first substrate and a second substrate are overlapped so as to form a cavity therebetween; An extraction electrode formed so as to be extracted from the cavity to the outer edge of the first substrate; and a piezoelectric vibration sealed in the cavity and electrically connected to the extraction electrode in the cavity
- a piezoelectric vibrator comprising: a piece; and an external electrode formed on an outer surface of the package and electrically connected to the extraction electrode outside the cavity, wherein the first substrate and the second substrate The substrate is bonded via a bonding film made of low-melting glass.
- the bonding film is made of low melting point glass, the bonding film can be formed without using an expensive apparatus required for photolithography, and can be manufactured at low cost. Further, it can be easily manufactured as compared with the case where an insulating film is formed between the bonding film and the extraction electrode as in the prior art.
- the piezoelectric vibrating piece may be bump-bonded to the extraction electrode by a gold bump.
- the piezoelectric vibrating piece and the lead electrode are bump-bonded by the gold bump, the conduction between the two is ensured and a high-quality piezoelectric vibrator can be obtained.
- gold has a higher melting point than conventional conductive adhesives used for mounting piezoelectric resonator elements, so even when heating the bonding film, the piezoelectric film is not affected by this heating.
- the vibrating piece can be supported, and a higher quality piezoelectric vibrator can be obtained.
- the bonding film is heated to a predetermined bonding temperature when bonding the first substrate and the second substrate, and is heated to a temperature higher than the bonding temperature before the bonding. May be.
- the piezoelectric vibrator described in any one of (5) to (7) is electrically connected to an integrated circuit as an oscillator.
- the piezoelectric vibrator described in any one of (5) to (7) is electrically connected to the time measuring unit.
- the piezoelectric vibrator described in any one of (5) to (7) is electrically connected to the filter unit.
- the piezoelectric vibrator that can be easily manufactured at low cost is provided, the cost can be reduced.
- the piezoelectric vibrator can be easily manufactured at low cost. Further, according to the piezoelectric vibrator of the present invention, it can be easily manufactured at low cost. Further, according to the oscillator, electronic device, and radio timepiece having the piezoelectric vibrator, cost can be reduced.
- FIG. 1 is an external perspective view showing an embodiment of a piezoelectric vibrator according to the present invention.
- FIG. 2 is a longitudinal sectional view of the piezoelectric vibrator shown in FIG.
- FIG. 3 is a top view of the piezoelectric vibrating piece constituting the piezoelectric vibrator shown in FIG. 4 is a bottom view of the piezoelectric vibrating piece shown in FIG.
- FIG. 5 is a cross-sectional view taken along line AA shown in FIG.
- FIG. 6 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a view of the lid substrate on which only the extraction electrode is formed as viewed from below.
- FIG. 7 is an internal configuration diagram of the piezoelectric vibrator shown in FIG.
- FIG. 8 is a flowchart of a manufacturing method for manufacturing the piezoelectric vibrator shown in FIG.
- FIG. 9 is a plan view of a base substrate wafer used in the method for manufacturing a piezoelectric vibrator according to the present invention.
- FIG. 10 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 8, and is a partially enlarged view showing a state in which a recess and a through hole are formed in the base substrate wafer.
- FIG. 11 is a diagram showing one step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG.
- FIG. 12 is a diagram showing one process when manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 8, and is a diagram showing a state where the base substrate wafer and the lid substrate wafer are put into the vacuum chamber.
- FIG. 13 is a diagram illustrating a process of manufacturing the piezoelectric vibrator according to the flowchart illustrated in FIG. 8, and is a diagram illustrating a state in which the base substrate wafer and the lid substrate wafer are bonded in the vacuum chamber.
- FIG. 14 is a configuration diagram showing an embodiment of an oscillator according to the present invention.
- FIG. 15 is a configuration diagram showing an embodiment of an electronic apparatus according to the invention.
- FIG. 16 is a block diagram showing an embodiment of a radio timepiece according to the present invention.
- Piezoelectric vibrator 2 Lid substrate (first substrate) 3 Base substrate (second substrate) 4 Package 5, 6 Lead electrode 7 Piezoelectric vibrating piece 8, 9 External electrode 35 Bonding film 40 Wafer for lid substrate (first substrate) 50 Base substrate wafer (second substrate) DESCRIPTION OF SYMBOLS 100 Oscillator 101 Oscillator integrated circuit 110 Portable information device (electronic device) 113 Timekeeping part of electronic equipment 130 Radio wave clock 131 Filter part of radio wave clock B Gold bump C Cavity T Junction temperature V Vacuum chamber
- FIG. 1 is an external perspective view showing an embodiment of a piezoelectric vibrator according to the present invention.
- FIG. 2 is a longitudinal sectional view of the piezoelectric vibrator shown in FIG.
- the lid substrate (first substrate) 2 and the base substrate (second substrate) 3 form a cavity C therebetween.
- the lead electrode 5 and 6 formed on the lid substrate 2 so as to be drawn out from the cavity C to the outer edge of the lid substrate 2, and sealed in the cavity C.
- the piezoelectric vibrating piece 7 electrically connected to the extraction electrodes 5 and 6 in the cavity C, and the external formed on the outer surface of the package 4 and electrically connected to the extraction electrodes 5 and 6 outside the cavity C Electrodes 8 and 9 are provided.
- FIG. 3 is a top view of the piezoelectric vibrating piece constituting the piezoelectric vibrator shown in FIG. 4 is a bottom view of the piezoelectric vibrating piece shown in FIG.
- FIG. 5 is a cross-sectional view taken along line AA shown in FIG.
- the piezoelectric vibrating piece 7 is a tuning fork type vibrating piece formed of a piezoelectric material such as crystal, lithium tantalate, or lithium niobate, and when a predetermined voltage is applied. It vibrates.
- the piezoelectric vibrating piece 7 includes a pair of vibrating arm portions 10 and 11 arranged in parallel, a base portion 12 that integrally fixes the base end sides of the pair of vibrating arm portions 10 and 11, and a pair of vibrating arm portions. 10 and 11, an excitation electrode 15 including a first excitation electrode 13 and a second excitation electrode 14 that vibrate the pair of vibrating arm portions 10 and 11, a first excitation electrode 13, and Mount electrodes 16 and 17 are electrically connected to the second excitation electrode 14.
- the piezoelectric vibrating piece 7 includes groove portions 18 formed on both main surfaces of the pair of vibrating arm portions 10 and 11 along the longitudinal direction of the vibrating arm portions 10 and 11, respectively. The groove portion 18 is formed from the proximal end side of the vibrating arm portions 10 and 11 to the vicinity of the middle.
- the excitation electrode 15 including the first excitation electrode 13 and the second excitation electrode 14 is an electrode that vibrates the pair of vibrating arm portions 10 and 11 at a predetermined resonance frequency in a direction approaching or separating from each other. Patterning is performed on the outer surfaces of the vibrating arm portions 10 and 11 while being electrically separated from each other.
- the first excitation electrode 13 is mainly formed on the groove portion 18 of one vibration arm portion 10 and on both side surfaces of the other vibration arm portion 11, and the second excitation electrode 14 is formed on one side. Are formed mainly on both side surfaces of the vibrating arm portion 10 and on the groove portion 18 of the other vibrating arm portion 11.
- first excitation electrode 13 and the second excitation electrode 14 are electrically connected to the mount electrodes 16 and 17 via the routing electrodes 19 and 20 on both main surfaces of the base portion 12, respectively.
- a voltage is applied to the piezoelectric vibrating piece 7 via the mount electrodes 16 and 17.
- the excitation electrode 15, the mount electrodes 16 and 17, and the routing electrodes 19 and 20 described above are made of a conductive film such as chromium (Cr), nickel (Ni), aluminum (Al), or titanium (Ti). It is formed.
- a weight metal film for performing mass adjustment (frequency adjustment) so as to vibrate its own vibration state within a predetermined frequency range is provided at the distal ends of the pair of vibrating arm portions 10 and 11.
- the weight metal film 21 is divided into a coarse adjustment film 21a used when the frequency is roughly adjusted and a fine adjustment film 21b used when the frequency is finely adjusted.
- the frequency of the pair of vibrating arm portions 10 and 11 can be kept within the range of the nominal (target) frequency of the device.
- the piezoelectric vibrating piece 7 configured in this way has a pair of mount electrodes on the two gold bumps B formed on the extraction electrodes 5 and 6 patterned on the upper surface of the lid substrate 2. Bump joints 16 and 17 are in contact with each other. Thereby, the piezoelectric vibrating piece 7 is supported in a state of being lifted from the upper surface of the lid substrate 2 and the mount electrodes 16 and 17 and the extraction electrodes 5 and 6 are electrically connected to each other.
- the base substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape.
- a rectangular recess 3a in which the piezoelectric vibrating piece 7 is accommodated is formed on the bonding surface side to which the lid substrate 2 is bonded.
- the recess 3 a is a cavity recess that becomes a cavity C that accommodates the piezoelectric vibrating reed 7 when the substrates 2 and 3 are overlapped.
- cut-out portions 3 b each having a 1 ⁇ 4 arc shape when viewed from above are formed over the entire thickness direction of the base substrate 3. ing.
- the base substrate 3 is bonded to the lid substrate 2 with the recess 3a facing the lid substrate 2 side.
- FIG. 6 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a view of the lid substrate on which only the extraction electrode is formed as viewed from below.
- the lid substrate 2 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and has a plate shape with a size that can be superimposed on the base substrate 3. Is formed.
- the extraction electrodes 5 and 6 are formed on the bonding surface side to which the base substrate 3 is bonded.
- connection portions 5 a and 6 a that are electrically connected to either one of the mount electrodes 16 or the other mount electrode 17 of the piezoelectric vibrating piece 7 are provided on the respective extraction electrodes 5 and 6. Yes.
- one mount electrode 16 of the piezoelectric vibrating piece 7 is connected to the connection portion 5 a of the first lead electrode 5, and the other mount electrode of the piezoelectric vibrating piece 7 is connected to the connection portion 6 a of the second lead electrode 6. 17 is connected.
- Both connection portions 5a and 6a are provided so as to be within the cavity C with a gap in the lateral width direction D1 of the lid substrate 2.
- the first extraction electrode 5 is extracted from the connection portion 5a to the outer edge portion on one end side in the longitudinal width direction D2 of the lid substrate 2, and the second extraction electrode 6 is connected to the connection portion. 6a is led out to the outer edge of the other end side of the lid substrate 2 in the longitudinal width direction D2. Further, the outer edge portions 5b and 6b located at the outer edge portion in the longitudinal width direction D2 in each of the extraction electrodes 5 and 6 are formed over the entire region in the short width direction D1 at the outer edge portion of the lid substrate 2, and are rectangular in plan view. It has become.
- the size W in the longitudinal width direction D2 of each of the outer edge portions 5b and 6b is larger than the size of the radius (curvature radius) of the cutout portion 3b of the base substrate 3.
- the lead electrodes 5 and 6 are composed of, for example, an electrode film having a two-layer structure in which chromium is a lower layer and gold is an upper layer.
- a pair of external electrodes 8 and 9 are formed on the outer surface of the base substrate 3, and the first external electrode 8 and the second external electrode 9 are electrically connected to each other. Is disconnected.
- the external electrodes 8 and 9 are formed from the bottom surface of the base substrate 3 to the side surface of the base substrate 3 in the longitudinal width direction D2.
- the first external electrode 8 is a first lead formed on the lid substrate 2 via the inner peripheral surfaces of the two notches 3b formed on one end side in the longitudinal width direction D2 of the base substrate 3. It is electrically connected to the electrode 5.
- the second external electrode 9 is formed on the lid substrate 2 via the inner peripheral surface of the remaining two notches 3b formed on the other end side in the longitudinal width direction D2 of the base substrate 3.
- the lead electrode 6 is electrically connected.
- FIG. 7 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1 and is a view of the lid substrate as viewed from below.
- the bonding film 35 is formed on the lid substrate 2.
- the bonding film 35 is formed along the periphery of the lid substrate 2 so as to surround the periphery of the recess 3 a formed in the base substrate 3.
- the bonding film 35 is heated to a predetermined bonding temperature T when the base substrate 3 and the lid substrate 2 are bonded, and is heated to a temperature higher than the bonding temperature T before the bonding. Is formed. This point will be described in detail when explaining the manufacturing method.
- the bonding film 35 is not formed in the portions located at the four corners of the lid substrate 2, and the extraction electrodes 5 and 6 are exposed in the portions.
- the exposed portions 5c and 6c from which the lead electrodes 5 and 6 are exposed have the same shape and size as the cutout portion 3b of the base substrate 3 in plan view, and the exposed portions 5c and 6c have external electrodes 8,
- the external electrodes 8, 9 and the extraction electrodes 5, 6 are electrically connected by forming 9 in a row.
- a predetermined drive voltage is applied to the external electrodes 8 and 9 formed on the base substrate 3.
- a current can be passed through the excitation electrode 15 including the first excitation electrode 13 and the second excitation electrode 14 of the piezoelectric vibrating piece 7, and a predetermined amount is set in a direction in which the pair of vibrating arm portions 10 and 11 are moved closer to and away from each other.
- Can be vibrated at a frequency of The vibration of the pair of vibrating arm portions 10 and 11 can be used as a time source, a control signal timing source, a reference signal source, and the like.
- FIG. 8 is a flowchart of a manufacturing method for manufacturing the piezoelectric vibrator shown in FIG.
- FIG. 9 is a plan view of a base substrate wafer used in the method for manufacturing a piezoelectric vibrator according to the present invention.
- a manufacturing method for manufacturing a plurality of the above-described piezoelectric vibrators 1 at a time will be described with reference to a flowchart shown in FIG.
- the piezoelectric vibrator 1 is manufactured using a lid substrate wafer 40 and a base substrate wafer 50 that will later become the lid substrate 2 and the base substrate 3, respectively.
- the planar view shape of both the wafers 40 and 50 is a shape in which a part of the peripheral portion of the disk is cut off. Both wafers 40 and 50 can be formed, for example, by polishing and cleaning soda-lime glass to a predetermined thickness and then removing the work-affected layer on the outermost surface by etching or the like.
- the method for manufacturing a piezoelectric vibrator according to the present invention is not limited to the method using the lid substrate wafer 40 and the base substrate wafer 50 described below.
- the base substrate 3 and the lid substrate of the piezoelectric vibrator 1 in advance are used. It is also possible to use a chip-like one having dimensions matched to the outer shape of 2, and to manufacture only one at a time.
- the piezoelectric vibrating reed manufacturing step is performed to manufacture the piezoelectric vibrating reed 7 shown in FIGS. 3 to 5 (S10). Further, after the piezoelectric vibrating piece 7 is manufactured, the resonance frequency is coarsely adjusted. This is done by irradiating the coarse adjustment film 21a of the weight metal film 21 with laser light to evaporate a part thereof and changing the weight. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting. This will be described later.
- FIG. 10 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 8, and is a partially enlarged view showing a state in which a recess and a through hole are formed in the base substrate wafer.
- the dotted line M shown in FIG. 10 has shown the cutting line M cut
- a first wafer manufacturing process is performed in which the base substrate wafer 50 is manufactured up to the state immediately before bonding, at the same time as or before or after the above process (S20).
- a base substrate wafer 50 is formed from soda-lime glass (S21).
- a recess forming step is performed for forming a plurality of recesses 3a for the cavity C in the matrix direction by etching or the like on the bonding surface of the base substrate wafer 50 (S22).
- through holes 3c penetrating the base substrate wafer 50 in the thickness direction are formed by sandblasting or the like at positions corresponding to the four corners of the recesses 3a in the base substrate wafer 50 so as to surround each recess 3a with a predetermined size.
- Form (S23) That is, the through-hole 3c centering on each intersection of the cutting lines M to be cut later is formed. This will later become the notch 3 b of the base substrate 3.
- the first wafer manufacturing process is completed.
- FIG. 11 is a diagram showing one step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 8, and is a partially enlarged view showing a state in which the lead electrode and the bonding film are formed on the lid substrate wafer. .
- the dotted line M shown in FIG. 11 has shown the cutting line M cut
- a second wafer manufacturing process is performed in which the lid substrate wafer 40 is manufactured up to the state immediately before bonding at the same time as or before or after the above process (S30).
- the lid substrate wafer 40 is formed from soda-lime glass (S31).
- a lead electrode forming step (S32) for patterning a conductive material on the upper surface of the lid substrate wafer 40 to form the lead electrodes 5 and 6 is performed.
- a bonding film forming step is performed in which the bonding film 35 is formed of low melting point glass on the upper surface of the lid substrate wafer 40 (S33).
- gel-like low-melting glass at room temperature is printed on the upper surface of the lid substrate wafer 40 by screen printing or the like, then baked and baked, and then gradually cooled to room temperature to form the bonding film 35.
- the second wafer manufacturing process is completed.
- a mounting process is performed in which the produced plurality of piezoelectric vibrating reeds 7 are joined to the upper surface of the lid substrate wafer 40 via the extraction electrodes 5 and 6 (S40).
- gold bumps B are formed on the pair of lead electrodes 5 and 6, respectively.
- the piezoelectric vibrating piece 7 is pressed against the gold bump B while heating the gold bump B to a predetermined temperature.
- the piezoelectric vibrating piece 7 is mechanically supported by the gold bumps B and floats from the upper surface of the lid substrate wafer 40, and the mount electrodes 16 and 17 and the extraction electrodes 5 and 6 are electrically connected. It becomes the state.
- FIG. 12 is a diagram showing one process when manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 8, and is a diagram showing a state where the base substrate wafer and the lid substrate wafer are put into the vacuum chamber. .
- the base substrate wafer 50 and the lid substrate wafer 40 are shown in a fragmented state rather than in a wafer shape for easy viewing.
- a loading process is performed in which the base substrate wafer 50 and the lid substrate wafer 40 are loaded into a vacuum chamber V whose internal pressure can be controlled (S45).
- a heating step of heating the bonding film 35 to a temperature higher than the bonding temperature T is performed (S50).
- the bonding temperature T is a temperature at which the bonding film 35 is heated in a bonding step (S70) to be described later.
- the bonding temperature T is 300 ° C. That is, in the heating process, the bonding film 35 is heated to a temperature higher than 300 ° C. for a certain time.
- heating the bonding film 35 is not limited to heating only the bonding film 35, and includes heating the bonding film 35 together with the lid substrate wafer 40 on which the bonding film 35 is formed. It is.
- the vacuum chamber V is provided with a pair of wafer gripping means (not shown) that are provided to face each other and that can approach and separate from each other. Then, when the base substrate wafer 50 and the lid substrate wafer 40 are put into the vacuum chamber V, as shown in FIG. 12, the upper surfaces of the wafers 40 and 50 face each other and the wafers 40 and 50 are separated from each other.
- the respective wafers 40 and 50 are set on the respective wafer gripping means. At this time, for example, the wafers 40 and 50 may be set on the wafer gripping means in an aligned state using a reference mark (not shown) as an index.
- the low melting point glass usually contains an organic substance, moisture, and the like
- the organic substance, moisture, etc. in the bonding film 35 are released to the outside as the outgas by heating the bonding film 35.
- this heating step since the bonding film 35 is heated to a temperature higher than the bonding temperature T, outgas that can be released from the bonding film 35 when the bonding film 35 is heated to the bonding temperature T can be released in advance.
- a depressurizing step for depressurizing the inside of the vacuum chamber V is performed (S60).
- the vacuum chamber V is provided with a vacuum pump V1 capable of controlling the pressure inside the vacuum chamber V, and the inside of the vacuum chamber V is decompressed by the vacuum pump V1. Thereby, the outgas released in the heating process is removed from the inside of the vacuum chamber V.
- FIG. 13 is a diagram illustrating a process of manufacturing the piezoelectric vibrator according to the flowchart illustrated in FIG. 8, and is a diagram illustrating a state in which the base substrate wafer and the lid substrate wafer are bonded in the vacuum chamber. .
- a bonding process is performed in the vacuum chamber V to bond the base substrate wafer 50 and the lid substrate wafer 40 through the bonding film 35 (S ⁇ b> 70).
- the wafer holding means is brought close to each other and the bonding film 35 is sandwiched between the base substrate wafer 50 and the lid substrate.
- the wafer holding means pressurizes both the wafers 40 and 50 so as to sandwich the bonding film 35 therebetween. For reliable bonding of both wafers 40 and 50, heating of the bonding film 35 at the bonding temperature T and pressurization of both the wafers 40 and 50 are maintained for a certain time.
- the piezoelectric vibrating reed 7 that is bonded to the wafers 40 and 50 and mounted on the lid substrate wafer 40 can be sealed in the cavity C formed between the wafers 40 and 50.
- a wafer body 60 in which the substrate wafer 40 and the base substrate wafer 50 are bonded can be obtained.
- the predetermined time can be appropriately changed depending on the bonding temperature T, the force for pressing both the wafers 40 and 50, the strain point of the low-melting glass used as the bonding film 35, and the like.
- the wafer body 60 is taken out from the vacuum chamber V, and an external electrode forming step for forming a plurality of external electrodes 8 and 9 is performed (S80).
- an external electrode forming step for forming a plurality of external electrodes 8 and 9 is performed (S80).
- the base substrate wafer 50 is masked with a metal mask or the like, and a metal film to be the first external electrode 8 and the second external electrode 9 is formed by sputtering or vapor deposition.
- the piezoelectric vibrating piece 7 sealed in the cavity C can be operated from the external electrodes 8 and 9 through the extraction electrodes 5 and 6.
- a cutting process for cutting the wafer body 60 along the cutting line M into pieces is performed (S90).
- the through hole 3c is divided into four, and a 1 ⁇ 4 arc-shaped cutout portion 3b is formed.
- the piezoelectric vibrating piece 7 is sealed in the cavity C formed between the lid substrate 2 and the base substrate 3 bonded to each other, and the two-layer structure surface-mount type piezoelectric vibrator shown in FIG. Multiple 1s can be manufactured at a time.
- a fine adjustment step of finely adjusting the frequency of each piezoelectric vibrator 1 to be within a predetermined range is performed (S100). That is, the fine adjustment film 21b of the weight metal film 21 formed at the tips of the pair of vibrating arm portions 10 and 11 is irradiated with laser light from the outside through the lid substrate 2 and the base substrate 3 made of glass as a transparent body. Evaporate. Thereby, since the weight of the tip side of the pair of vibrating arm portions 10 and 11 changes, the frequency of the piezoelectric vibrator 1 can be finely adjusted so as to be within a predetermined range of the nominal frequency.
- an electrical characteristic inspection of the piezoelectric vibrating piece 7 is performed (S110). That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependence of resonance frequency and resonance resistance value), etc. of the piezoelectric vibrating piece 7 are measured and checked. In addition, the insulation resistance characteristics and the like are also checked. Finally, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check dimensions, quality, and the like. This completes the manufacture of the piezoelectric vibrator 1.
- the bonding film 35 is formed of low-melting glass in the bonding film forming step. Therefore, the bonding film 35 can be formed by, for example, screen printing as described above, and an expensive apparatus required for photolithography used in the prior art in the process of forming the bonding film 35 is not required.
- the piezoelectric vibrator 1 can be manufactured at low cost.
- the base substrate wafer 50 and the lid substrate wafer 40 are overlapped so as to sandwich the bonding film 35 while heating the bonding film 35 to the bonding temperature T.
- Wafers 40 and 50 are bonded. That is, unlike the case where both wafers 40 and 50 are bonded by anodic bonding, both the wafers 40 and 50 are bonded without applying a voltage to the bonding film 35, so that insulation is provided between the bonding film 35 and the extraction electrodes 5 and 6. There is no need to provide a membrane. Therefore, the piezoelectric vibrator 1 can be easily manufactured as compared with the case of forming an insulating film as in the prior art.
- the piezoelectric vibrating piece 7 and the extraction electrodes 5 and 6 are bump-bonded by the gold bumps B, the conduction between the two is ensured and the high-quality piezoelectric vibrator 1 can be manufactured.
- gold has a higher melting point than the conductive adhesive or the like conventionally used for mounting the piezoelectric vibrating piece 7, when the bonding film 35 is heated to the bonding temperature T in the bonding process, and in the heating process. Even when the bonding film 35 is heated to a temperature higher than the bonding temperature T, the piezoelectric vibrating piece 7 can be reliably supported without being affected by the heating, and the piezoelectric vibrator 1 of higher quality can be obtained. Can be manufactured.
- the joining process is performed inside the vacuum chamber V after the pressure reducing process, that is, after the heating process. Accordingly, since the outgas released from the bonding film 35 in the bonding process can be suppressed to a very small amount, it is possible to suppress the vacuum degree in the cavity C from being lowered by the outgas released from the bonding film 35. The quality of the piezoelectric vibrator 1 can be further improved.
- the joining temperature T in the joining process is 300 ° C. or higher
- the piezoelectric vibrator 1 manufactured by this manufacturing method is mounted as one component on another product, for example, by employing a reflow method or the like, heating is involved. Even if it is a case, it can suppress that outgas arises. Thereby, it is possible to reliably suppress the quality of the piezoelectric vibrator 1 from being lowered when the piezoelectric vibrator 1 is mounted.
- FIG. 14 is a diagram illustrating a configuration of an oscillator including the piezoelectric vibrator 1.
- the oscillator 100 is configured by configuring the piezoelectric vibrator 1 as an oscillator electrically connected to the integrated circuit 101.
- the oscillator 100 includes a substrate 103 on which an electronic component 102 such as a capacitor is mounted. On the substrate 103, the integrated circuit 101 for the oscillator is mounted, and the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101.
- the electronic component 102, the integrated circuit 101, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).
- the piezoelectric vibrating piece 7 in the piezoelectric vibrator 1 vibrates, and this vibration is an electric signal due to the piezoelectric characteristics of the piezoelectric vibrating piece 7.
- the input electrical signal is subjected to various processes by the integrated circuit 101 and is output as a frequency signal.
- the piezoelectric vibrator 1 functions as an oscillator.
- an RTC real-time clock
- a function for controlling the time, providing a time, a calendar, and the like can be added.
- the oscillator 100 of the present embodiment since the piezoelectric vibrator 1 with a reduced cost is provided, the oscillator 100 itself is also reduced in cost.
- the portable information device 110 is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the related art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen.
- the portable information device 110 includes the piezoelectric vibrator 1 and a power supply unit 111 for supplying power.
- the power supply unit 111 is made of, for example, a lithium secondary battery.
- the power supply unit 111 includes a control unit 112 that performs various controls, a clock unit 113 that counts time, a communication unit 114 that communicates with the outside, a display unit 115 that displays various types of information, A voltage detection unit 116 that detects the voltage of the functional unit is connected in parallel.
- the power unit 111 supplies power to each functional unit.
- the control unit 112 controls each function unit to control operation of the entire system such as transmission and reception of voice data, measurement and display of the current time, and the like.
- the control unit 112 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.
- the clock unit 113 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1.
- the piezoelectric vibrator 1 When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating piece 7 vibrates, and this vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 7 and input to the oscillation circuit as an electric signal.
- the output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 112 via the interface circuit, and the current time, current date, calendar information, or the like is displayed on the display unit 115.
- the communication unit 114 has functions similar to those of a conventional mobile phone, and includes a radio unit 117, a voice processing unit 118, a switching unit 119, an amplification unit 120, a voice input / output unit 121, a telephone number input unit 122, and a ring tone generation unit. 123 and a call control memory unit 124.
- the wireless unit 117 exchanges various data such as audio data with the base station via the antenna 125.
- the audio processing unit 118 encodes and decodes the audio signal input from the radio unit 117 or the amplification unit 120.
- the amplifying unit 120 amplifies the signal input from the audio processing unit 118 or the audio input / output unit 121 to a predetermined level.
- the voice input / output unit 121 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.
- the ring tone generator 123 generates a ring tone in response to a call from the base station.
- the switching unit 119 switches the amplifying unit 120 connected to the voice processing unit 118 to the ringing tone generating unit 123 only when an incoming call is received, so that the ringing tone generated in the ringing tone generating unit 123 is transmitted via the amplifying unit 120.
- the call control memory unit 124 stores a program related to incoming / outgoing call control of communication.
- the telephone number input unit 122 includes, for example, a number key from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.
- the voltage detection unit 116 detects the voltage drop and notifies the control unit 112 of the voltage drop.
- the predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 114, and is, for example, about 3V.
- the control unit 112 prohibits the operations of the radio unit 117, the voice processing unit 118, the switching unit 119, and the ring tone generation unit 123. In particular, it is essential to stop the operation of the wireless unit 117 with high power consumption. Further, the display unit 115 displays that the communication unit 114 has become unusable due to insufficient battery power.
- the operation of the communication unit 114 can be prohibited by the voltage detection unit 116 and the control unit 112, and that effect can be displayed on the display unit 115.
- This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 115.
- the function of the communication part 114 can be stopped more reliably by providing the power supply cutoff part 126 that can selectively cut off the power of the part related to the function of the communication part 114.
- the portable information device 110 of the present embodiment since the low-cost piezoelectric vibrator 1 is provided, the portable information device 110 itself is also reduced in cost.
- FIG. 16 is a diagram showing a configuration of a radio timepiece having the piezoelectric vibrator 1 described above.
- the radio timepiece 130 of the present embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 131, and receives a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
- a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
- Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.
- the antenna 132 receives a long standard wave of 40 kHz or 60 kHz.
- the long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave.
- the received long standard wave is amplified by the amplifier 133 and filtered and tuned by the filter unit 131 having the plurality of piezoelectric vibrators 1.
- the piezoelectric vibrator 1 in the present embodiment includes piezoelectric vibrator portions 134 and 135 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency.
- the filtered signal having a predetermined frequency is detected and demodulated by a detection and rectification circuit 136.
- the time code is extracted via the waveform shaping circuit 137 and counted by the CPU 138.
- the CPU 138 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected on the RTC 139, and accurate time information is displayed.
- the carrier wave is 40 kHz or 60 kHz
- the piezoelectric vibrator portions 134 and 135 are preferably vibrators having the tuning fork type structure described above.
- the frequency of the long standard wave is different overseas.
- a standard radio wave of 77.5 KHz is used. Accordingly, when the radio timepiece 130 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.
- the radio-controlled timepiece 130 of the present embodiment since the cost is reduced, the radio-controlled timepiece 130 itself is also reduced in cost.
- the grooved piezoelectric vibrating piece 7 in which the groove portions 18 are formed on both surfaces of the vibrating arm portions 10 and 11 has been described as an example of the piezoelectric vibrating piece 7.
- the piezoelectric vibrating piece may be used.
- the tuning fork type piezoelectric vibrating piece 7 has been described as an example, but is not limited to the tuning fork type.
- it may be a thickness sliding vibration piece.
- the cavity C was formed by providing the recessed part 3a in the base substrate 3, it is not restricted to this, For example, you may form the cavity C by providing a recessed part in the lid substrate 2, Both board
- the piezoelectric vibrating piece 7 is mounted on the lid substrate 2 and the external electrodes 8 and 9 are formed on the base substrate 3.
- the present invention is not limited to this, and the piezoelectric vibrating piece 7 is mounted.
- the substrate and the substrate on which the external electrodes 8 and 9 are formed may be the same.
- the bonding film 35 is formed on the lid substrate 2.
- the present invention is not limited to this, and the bonding film may be formed on the base substrate 3. It may be formed.
- the piezoelectric vibrating piece 7 is joined to the extraction electrodes 5 and 6 by the gold bumps B.
- the invention is not limited to the gold bumps B.
- joining temperature T was 300 degreeC in the joining process, it is not restricted to this.
- the bonding temperature T is preferably 300 ° C. or higher.
- the bonding temperature T is preferably lower than the phase transition temperature that is a transition point related to the piezoelectricity of the crystal.
- the piezoelectric vibrator 1 is manufactured in the order of the mounting step (S40), the charging step (S45), the heating step (S50), and the pressure reducing step (S60). is not.
- the charging process (S45) and the heating process (S50) may be performed after the mounting process (S40), and the decompression process (S60) may be performed after the charging process (S45).
- the piezoelectric vibrator may be manufactured in the order of the mounting process (S40), the heating process (S50), the charging process (S45), and the pressure reducing process (S60).
- the mounting process (S40), the charging process (S45), You may manufacture a piezoelectric vibrator in order of a pressure reduction process (S60) and a heating process (S50). Furthermore, the charging step (S45), the heating step (S50), and the pressure reducing step (S60) may not be performed.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
このように構成された圧電振動子によれば、引き出し電極と接合膜とが絶縁膜により電気的に切り離されているため、引き出し電極同士が導通することを防止し、外部電極を介して圧電振動片に印加可能であるとされている。
始めに、陽極接合に用いる接合膜をフォトリソグラフィにより形成しているが、このフォトリソグラフィの実施に要する装置は高価であるため、陽極接合によって蓋部材とベース部材とを接合するためには費用が掛かるという問題がある。
次いで、引き出し電極と接合膜との間に絶縁膜を設ける必要があり、手間が掛かるという問題がある。その上、確実な陽極接合を行うためには前記絶縁膜の表面が平坦であること好ましいため、絶縁膜を平坦化するためにより一層の手間が掛かるという問題がある。
(1)本発明に係る圧電振動子の製造方法は、第1の基板と第2の基板とが、間にキャビティを形成するように重ね合わせられて構成されたパッケージと;前記第1の基板に、前記キャビティ内から前記第1の基板の外縁に引き出されるように形成された引き出し電極と;前記キャビティ内に封止されると共に、前記キャビティ内で前記引き出し電極に電気的に接続された圧電振動片と;前記パッケージの外表面に形成され、前記キャビティの外部で前記引き出し電極に電気的に接続された外部電極と;を備える圧電振動子を製造する方法であって、前記第1の基板と前記第2の基板との少なくとも一方に、両基板を接合する接合膜を低融点ガラスで形成する接合膜形成工程と;前記第1の基板に形成された前記引き出し電極に前記圧電振動片を電気的に接続するマウント工程と;前記接合膜を所定の接合温度に加熱しながら、前記接合膜を挟み込むように前記第1の基板と前記第2の基板とを重ね合わせ、前記接合膜を介して両基板を接合する接合工程と;を備える。
また、接合工程において、接合膜を接合温度に加熱しながら、接合膜を挟み込むように第1の基板と第2の基板とを重ね合わせることで、接合膜を介して両基板を接合している。つまり、陽極接合によって両基板を接合する場合と異なり、接合膜に電圧を印加せずに両基板を接合するので、接合膜と引き出し電極の間に絶縁膜を設ける必要がない。従って、従来技術のように絶縁膜を形成する場合に比べて、圧電振動子を容易に製造することができる。
この場合、加熱工程において接合膜を接合温度より高温に加熱しているので、接合膜が接合温度に加熱されたときに接合膜から放出されうるアウトガスを、加熱工程において予め放出させることができる。従って、加熱工程後に実施する接合工程において接合膜から放出されるアウトガスをごく微量に抑えることができる。
以上より、接合膜から放出されるアウトガスによりキャビティ内の真空度が低下するのを抑制することが可能となり、圧電振動子の品質を向上させることができる。
また、減圧工程を加熱工程後に実施する場合には、仮に投入工程後に加熱工程を実施することで真空室内にアウトガスが放出されていたとしても、このアウトガスを真空室の内部から取り除くことが可能となり、前述の作用効果をより確実に奏することができる。
また、本発明の圧電振動子によれば、低コストで且つ容易に製造することができる。
また、この圧電振動子を有する発振器、電子機器、電波時計によれば、低コスト化を図ることができる。
2 リッド基板(第1の基板)
3 ベース基板(第2の基板)
4 パッケージ
5、6 引き出し電極
7 圧電振動片
8、9 外部電極
35 接合膜
40 リッド基板用ウエハ(第1の基板)
50 ベース基板用ウエハ(第2の基板)
100 発振器
101 発振器の集積回路
110 携帯情報機器(電子機器)
113 電子機器の計時部
130 電波時計
131 電波時計のフィルタ部
B 金バンプ
C キャビティ
T 接合温度
V 真空室
以下、本発明に係る圧電振動子の一実施形態を、図面を参照して説明する。図1は、本発明に係る圧電振動子の一実施形態を示す外観斜視図である。図2は、図1に示す圧電振動子の縦断面図である。
図1及び図2に示すように、本実施形態の圧電振動子1は、リッド基板(第1の基板)2とベース基板(第2の基板)3とが、間にキャビティCを形成するように重ね合わせられて構成されたパッケージ4と、リッド基板2に、キャビティC内からリッド基板2の外縁に引き出されるように形成された引き出し電極5、6と、キャビティC内に封止されると共に、キャビティC内で引き出し電極5、6に電気的に接続された圧電振動片7と、パッケージ4の外表面に形成され、キャビティCの外部で引き出し電極5、6に電気的に接続された外部電極8、9と、を備えている。
図3から図5に示すように、圧電振動片7は、水晶やタンタル酸リチウム、ニオブ酸リチウム等の圧電材料から形成された音叉型の振動片であり、所定の電圧が印加されたときに振動するものである。この圧電振動片7は、平行に配置された一対の振動腕部10、11と、この一対の振動腕部10、11の基端側を一体的に固定する基部12と、一対の振動腕部10、11の外表面上に形成されて一対の振動腕部10、11を振動させる第1の励振電極13と第2の励振電極14とからなる励振電極15と、第1の励振電極13及び第2の励振電極14に電気的に接続されたマウント電極16,17とを有している。また圧電振動片7は、一対の振動腕部10、11の両主面上に、この振動腕部10、11の長手方向に沿ってそれぞれ形成された溝部18を備えている。この溝部18は、振動腕部10、11の基端側から略中間付近まで形成されている。
そして、ベース基板3は、凹部3aをリッド基板2側に対向させた状態でこのリッド基板2に対して接合されている。
図1、図2及び図6に示すように、リッド基板2は、ガラス材料、例えばソーダ石灰ガラスからなる透明の絶縁基板であり、ベース基板3に対して重ね合わせ可能な大きさで板状に形成されている。そして、ベース基板3が接合される接合面側には、前記引き出し電極5、6が形成されている。
なお、引き出し電極5、6は、例えばクロムを下層、金を上層とする二層構造の電極膜で構成される。
図7に示すように、本実施形態では、接合膜35はリッド基板2に形成されている。図示の例では、接合膜35は、ベース基板3に形成された凹部3aの周囲を囲むようにリッド基板2の周縁に沿って形成されている。
また、本実施形態では、接合膜35は、ベース基板3とリッド基板2とを接合する際に所定の接合温度Tに加熱されると共に、前記接合の前に接合温度Tより高温に加熱されて形成されている。この点については、製造方法の説明の際に詳述する。
このように引き出し電極5、6、接合膜35、外部電極8、9を形成することで、接合膜35によるベース基板3とリッド基板2との接合を確実なものとしつつ、外部電極8、9と引き出し電極5、6との導通を確実に確保することができる。
図8は、図1に示す圧電振動子を製造する製造方法のフローチャートである。図9は、本発明に係る圧電振動子の製造方法で利用するベース基板用ウエハの平面図である。
次に、図8に示すフローチャートを参照して、上述した圧電振動子1を一度に複数製造する製造方法について以下に説明する。なお、本実施形態では、図9に示すように、それぞれ後にリッド基板2及びベース基板3となるリッド基板用ウエハ40、ベース基板用ウエハ50を利用して圧電振動子1を製造する。両ウエハ40、50の平面視形状は、円板の周縁部の一部が切り落とされた形状となっている。両ウエハ40、50とも、例えば、ソーダ石灰ガラスを所定の厚さまで研磨加工して洗浄した後に、エッチング等により最表面の加工変質層を除去して形成することができる。また、本発明に係る圧電振動子の製造方法は、以下に説明するリッド基板用ウエハ40、ベース基板用ウエハ50を利用するものに限られず、例えば予め圧電振動子1のベース基板3及びリッド基板2の外形に寸法を合わせたチップ状のものを用い、一度に一つのみ製造するものでも良い。
次に、図10に示すように、上記工程と同時或いは前後のタイミングで、ベース基板用ウエハ50を、接合を行う直前の状態まで作製する第1のウエハ作製工程を行う(S20)。まず、前述したように、ソーダ石灰ガラスからベース基板用ウエハ50を形成する(S21)。次いで、ベース基板用ウエハ50の接合面に、エッチング等により行列方向にキャビティC用の凹部3aを複数形成する凹部形成工程を行う(S22)。次いで、各凹部3aを所定の大きさで取り囲むように、ベース基板用ウエハ50において各凹部3aの四隅に対応した位置に、ベース基板用ウエハ50を厚み方向に貫通するスルーホール3cをサンドブラスト等により形成する(S23)。つまり、後に切断する前記切断線Mの各交点を中心とするスルーホール3cを形成する。これは、後にベース基板3の切り欠き部3bとなるものである。
この時点で、第1のウエハ作製工程が終了する。
次に、図11に示すように、上記工程と同時或いは前後のタイミングで、リッド基板用ウエハ40を、接合を行う直前の状態まで作製する第2のウエハ作製工程を行う(S30)。まず、前述したように、ソーダ石灰ガラスからリッド基板用ウエハ40を形成する(S31)。次いで、リッド基板用ウエハ40の上面に導電性材料をパターニングして、引き出し電極5、6を形成する引き出し電極形成工程(S32)を行う。次いで、リッド基板用ウエハ40の上面に接合膜35を低融点ガラスで形成する接合膜形成工程を行う(S33)。この際、例えば常温でゲル状の低融点ガラスをリッド基板用ウエハ40の上面にスクリーン印刷等で印刷した後、焼成して焼き固め、常温まで徐冷することで接合膜35を形成する。
この時点で、第2のウエハ作製工程が終了する。
次に、図12に示すように、ベース基板用ウエハ50及びリッド基板用ウエハ40を、内部の圧力が制御可能な真空室Vに投入する投入工程を行う(S45)。
次に、接合膜35を接合温度Tより高温に加熱する加熱工程を行う(S50)。ここで、接合温度Tとは、後述する接合工程(S70)において接合膜35を加熱する温度であり、本実施形態では接合温度Tは300℃である。つまり、加熱工程においては、接合膜35を300℃より高温に一定時間加熱する。なお、接合膜35を加熱するとは、単に接合膜35のみを加熱する場合に限られるものではなく、接合膜35が形成されているリッド基板用ウエハ40と共に接合膜35を加熱する場合等も含まれる。
次に、真空室Vの内部を減圧する減圧工程を行う(S60)。本実施形態では、真空室Vには、真空室V内部の圧力が制御可能な真空ポンプV1が設けられており、この真空ポンプV1により真空室Vの内部を減圧する。これにより、加熱工程において放出されたアウトガスが、真空室Vの内部から取り除かれる。
次に、図13に示すように、減圧工程後に真空室Vの内部で、接合膜35を介してベース基板用ウエハ50及びリッド基板用ウエハ40を接合する接合工程を行う(S70)。この際、本実施形態では、接合膜35を接合温度Tである300℃に加熱しながら、前記ウエハ把持手段を互いに近接させて、接合膜35を挟み込むようにベース基板用ウエハ50とリッド基板用ウエハ40とを重ね合わせることで行う。更に、前記ウエハ把持手段によって、両ウエハ40、50を互いに接合膜35を挟み込むように加圧しながら行う。そして、両ウエハ40、50の確実な接合のために、接合膜35の接合温度Tでの加熱及び両ウエハ40、50の加圧を一定時間維持する。
次に、本発明に係る発振器の一実施形態について、図14を参照しながら説明する。図14は、圧電振動子1を備えた発振器の構成を示す図である。
また、集積回路101の構成を、例えば、RTC(リアルタイムクロック)モジュール等を要求に応じて選択的に設定することで、時計用単機能発振器等の他、当該機器や外部機器の動作日や時刻を制御したり、時刻やカレンダー等を提供したりする機能を付加することができる。
次に、本発明に係る電子機器の一実施形態について、図15を参照して説明する。なお、電子機器として、上述した圧電振動子1を有する携帯情報機器を例にして説明する。始めに本実施形態の携帯情報機器110は、例えば、携帯電話に代表されるものであり、従来技術における腕時計を発展、改良したものである。外観は腕時計に類似し、文字盤に相当する部分に液晶ディスプレイを配し、この画面上に現在の時刻等を表示させることができるものである。また、通信機として利用する場合には、手首から外し、バンドの内側部分に内蔵されたスピーカ及びマイクロフォンによって、従来技術の携帯電話と同様の通信を行うことが可能である。しかしながら、従来の携帯電話と比較して、格段に小型化及び軽量化されている。
無線部117は、音声データ等の各種データを、アンテナ125を介して基地局と送受信のやりとりを行う。音声処理部118は、無線部117又は増幅部120から入力された音声信号を符号化及び複号化する。増幅部120は、音声処理部118又は音声入出力部121から入力された信号を、所定のレベルまで増幅する。音声入出力部121は、スピーカやマイクロフォン等からなり、着信音や受話音声を拡声したり、音声を集音したりする。
なお、呼制御メモリ部124は、通信の発着呼制御に係るプログラムを格納する。また、電話番号入力部122は、例えば、0から9の番号キー及びその他のキーを備えており、これら番号キー等を押下することにより、通話先の電話番号等が入力される。
なお、通信部114の機能に係る部分の電源を、選択的に遮断することができる電源遮断部126を備えることで、通信部114の機能をより確実に停止することができる。
次に、本発明に係る電波時計の一実施形態について、図16を参照して説明する。図16は、上述した圧電振動子1を有する電波時計の構成を示す図である。
本実施形態の電波時計130は、図16に示すように、フィルタ部131に電気的に接続された圧電振動子1を備えたものであり、時計情報を含む標準の電波を受信して、正確な時刻に自動修正して表示する機能を備えた時計である。
日本国内には、福島県(40kHz)と佐賀県(60kHz)とに、標準の電波を送信する送信所(送信局)があり、それぞれ標準電波を送信している。40kHz若しくは60kHzのような長波は、地表を伝播する性質と、電離層と地表とを反射しながら伝播する性質とを併せもつため、伝播範囲が広く、上述した2つの送信所で日本国内を全て網羅している。
アンテナ132は、40kHz若しくは60kHzの長波の標準電波を受信する。長波の標準電波は、タイムコードと呼ばれる時刻情報を、40kHz若しくは60kHzの搬送波にAM変調をかけたものである。受信された長波の標準電波は、アンプ133によって増幅され、複数の圧電振動子1を有するフィルタ部131によって濾波、同調される。
本実施形態における圧電振動子1は、上記搬送周波数と同一の40kHz及び60kHzの共振周波数を有する圧電振動子部134、135をそれぞれ備えている。
搬送波は、40kHz若しくは60kHzであるから、圧電振動子部134、135は、上述した音叉型の構造を持つ振動子が好適である。
なお、上述の説明は、日本国内の例で示したが、長波の標準電波の周波数は、海外では異なっている。例えば、ドイツでは77.5KHzの標準電波が用いられている。従って、海外でも対応可能な電波時計130を携帯機器に組み込む場合には、さらに日本の場合とは異なる周波数の圧電振動子1を必要とする。
例えば、上記実施形態では、圧電振動片7の一例として振動腕部10、11の両面に溝部18が形成された溝付きの圧電振動片7を例に挙げて説明したが、溝部18がないタイプの圧電振動片でも構わない。但し、溝部18を形成することで、一対の励振電極15に所定の電圧を印加させたときに、一対の励振電極15間における電界効率を上げることができるので、振動損失をより抑えて振動特性をさらに向上することができる。つまり、CI値(Crystal Impedance)をさらに低くすることができ、圧電振動片7のさらなる高性能化を図ることができる。この点において、溝部18を形成する方が好ましい。
また、上記実施形態では、ベース基板3に凹部3aを設けることでキャビティCを形成したが、これに限られず、例えばリッド基板2に凹部を設けることでキャビティCを形成しても良く、両基板2、3に凹部を設けてキャビティCを形成しても良い。
また、上記実施形態では、リッド基板2に接合膜35が形成されるものとしたが、これに限られず、ベース基板3に接合膜を形成しても良く、両基板2、3に接合膜を形成しても良い。
また、上記実施形態では、接合工程において、接合温度Tを300℃としたが、これに限られない。但し、接合温度Tは300℃以上であることが好ましい。また、接合温度Tは、圧電振動片7として水晶を用いる場合には、高くとも水晶の圧電性に係る転移点である相転移温度より低いことが好ましい。
更にまた、投入工程(S45)、加熱工程(S50)及び減圧工程(S60)は実施しなくても構わない。
Claims (10)
- 第1の基板と第2の基板とが、間にキャビティを形成するように重ね合わせられて構成されたパッケージと;
前記第1の基板に、前記キャビティ内から前記第1の基板の外縁に引き出されるように形成された引き出し電極と;
前記キャビティ内に封止されると共に、前記キャビティ内で前記引き出し電極に電気的に接続された圧電振動片と;
前記パッケージの外表面に形成され、前記キャビティの外部で前記引き出し電極に電気的に接続された外部電極と;を備える圧電振動子を製造する方法であって、
前記第1の基板と前記第2の基板との少なくとも一方に、両基板を接合する接合膜を低融点ガラスで形成する接合膜形成工程と;
前記第1の基板に形成された前記引き出し電極に前記圧電振動片を電気的に接続するマウント工程と;
前記接合膜を所定の接合温度に加熱しながら、前記接合膜を挟み込むように前記第1の基板と前記第2の基板とを重ね合わせ、前記接合膜を介して両基板を接合する接合工程と;
を備える圧電振動子の製造方法。 - 請求項1に記載の圧電振動子の製造方法であって、
前記マウント工程の際、前記圧電振動片を前記引き出し電極に金バンプによりバンプ接合する圧電振動子の製造方法。 - 請求項1に記載の圧電振動子の製造方法であって、
前記接合膜形成工程及び前記マウント工程後に、前記第1の基板及び前記第2の基板を、内部の圧力が制御可能な真空室に投入する投入工程と;
前記接合膜形成工程及び前記マウント工程後に、前記接合膜を加熱する加熱工程と;
前記投入工程後に、前記真空室の内部を減圧する減圧工程と;を更に備え、
前記接合工程を、前記加熱工程及び前記減圧工程後に前記真空室の内部で実施する圧電振動子の製造方法。 - 請求項1に記載の圧電振動子の製造方法であって、
前記接合温度は、300℃以上である圧電振動子の製造方法。 - 第1の基板と第2の基板とが、間にキャビティを形成するように重ね合わせられて構成されたパッケージと;
前記第1の基板に、前記キャビティ内から前記第1の基板の外縁に引き出されるように形成された引き出し電極と;
前記キャビティ内に封止されると共に、前記キャビティ内で前記引き出し電極に電気的に接続された圧電振動片と;
前記パッケージの外表面に形成され、前記キャビティの外部で前記引き出し電極に電気的に接続された外部電極と;を備える圧電振動子であって、
前記第1の基板と前記第2の基板とが、低融点ガラスからなる接合膜を介して接合されている圧電振動子。 - 請求項5に記載の圧電振動子であって、
前記圧電振動片が、前記引き出し電極に金バンプによりバンプ接合されている圧電振動子。 - 請求項5に記載の圧電振動子であって、
前記接合膜が、前記第1の基板と前記第2の基板とを接合する際に所定の接合温度に加熱されると共に、前記接合の前に前記接合温度より高温に加熱されて形成されている圧電振動子。 - 請求項5から7のいずれか1項に記載の圧電振動子が、発振子として集積回路に電気的に接続されている発振器。
- 請求項5から7のいずれか1項に記載の圧電振動子が、計時部に電気的に接続されている電子機器。
- 請求項5から7のいずれか1項に記載の圧電振動子が、フィルタ部に電気的に接続されている電波時計。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2008/071644 WO2010061468A1 (ja) | 2008-11-28 | 2008-11-28 | 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器及び電波時計 |
JP2010540272A JP5162675B2 (ja) | 2008-11-28 | 2008-11-28 | 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器及び電波時計 |
CN2008801322429A CN102227872A (zh) | 2008-11-28 | 2008-11-28 | 压电振动器的制造方法、压电振动器、振荡器、电子设备及电波钟 |
TW098139735A TW201034375A (en) | 2008-11-28 | 2009-11-23 | Piezoelectric oscillator manufacturing method, piezoelectric oscillator, oscillator, electronic device, and radio clock |
US13/112,472 US8638180B2 (en) | 2008-11-28 | 2011-05-20 | Piezoelectric vibrator manufacturing method, piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2008/071644 WO2010061468A1 (ja) | 2008-11-28 | 2008-11-28 | 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器及び電波時計 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/112,472 Continuation US8638180B2 (en) | 2008-11-28 | 2011-05-20 | Piezoelectric vibrator manufacturing method, piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010061468A1 true WO2010061468A1 (ja) | 2010-06-03 |
Family
ID=42225361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/071644 WO2010061468A1 (ja) | 2008-11-28 | 2008-11-28 | 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器及び電波時計 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8638180B2 (ja) |
JP (1) | JP5162675B2 (ja) |
CN (1) | CN102227872A (ja) |
TW (1) | TW201034375A (ja) |
WO (1) | WO2010061468A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012009969A (ja) * | 2010-06-23 | 2012-01-12 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス及びその製造方法 |
JP2013251743A (ja) * | 2012-05-31 | 2013-12-12 | Nippon Dempa Kogyo Co Ltd | 弾性表面波デバイスとその製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9603555B2 (en) | 2010-05-17 | 2017-03-28 | Industrial Technology Research Institute | Motion/vibration detection system and method with self-injection locking |
US9375153B2 (en) * | 2010-05-17 | 2016-06-28 | Industrial Technology Research Institute | Motion/vibration sensor |
JP5806547B2 (ja) * | 2011-08-05 | 2015-11-10 | 日本電波工業株式会社 | 圧電デバイス及び圧電デバイスの製造方法 |
JP6056259B2 (ja) * | 2012-08-18 | 2017-01-11 | セイコーエプソン株式会社 | 電子部品の製造方法、電子デバイスの製造方法 |
JP2014110369A (ja) * | 2012-12-04 | 2014-06-12 | Seiko Epson Corp | ベース基板、振動子、発振器、センサー、電子デバイス、電子機器、および移動体 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07249957A (ja) * | 1994-03-11 | 1995-09-26 | Matsushita Electric Ind Co Ltd | 電子部品及びその形成方法 |
JP2002124845A (ja) * | 2000-08-07 | 2002-04-26 | Nippon Sheet Glass Co Ltd | 水晶振動子パッケージ及びその製造方法 |
JP2002319839A (ja) * | 2001-02-19 | 2002-10-31 | Seiko Epson Corp | 圧電デバイス |
JP2003204240A (ja) * | 2001-10-31 | 2003-07-18 | Piedekku Gijutsu Kenkyusho:Kk | 水晶ユニットとその製造方法 |
JP2003209198A (ja) * | 2001-11-09 | 2003-07-25 | Nippon Sheet Glass Co Ltd | 電子部品パッケージ |
JP2004254238A (ja) * | 2003-02-21 | 2004-09-09 | Seiko Epson Corp | 圧電デバイスとその製造方法ならびに圧電デバイスを利用した携帯電話装置および圧電デバイスを利用した電子機器 |
JP2006196932A (ja) * | 2003-05-07 | 2006-07-27 | Seiko Epson Corp | 音叉型圧電デバイスの製造方法および音叉型圧電デバイス |
JP2008098909A (ja) * | 2006-10-11 | 2008-04-24 | Epson Toyocom Corp | 圧電振動片および圧電デバイス |
JP2008211570A (ja) * | 2007-02-27 | 2008-09-11 | Citizen Holdings Co Ltd | 振動子封止体の製造方法及び振動子封止体ならびに物理量センサ |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS589416A (ja) * | 1981-07-09 | 1983-01-19 | Seiko Epson Corp | 水晶振動子用容器の製造方法 |
JP3164891B2 (ja) * | 1992-06-23 | 2001-05-14 | 松下電器産業株式会社 | 水晶振動子とその製造方法 |
JP3164890B2 (ja) * | 1992-06-23 | 2001-05-14 | 松下電器産業株式会社 | 水晶振動子とその製造方法 |
JPH0818380A (ja) * | 1994-06-24 | 1996-01-19 | Shimeo Seimitsu Kk | 圧電振動子容器およびその製造方法 |
JPH0884042A (ja) * | 1994-09-14 | 1996-03-26 | Citizen Watch Co Ltd | パッケージ部材 |
JPH08340184A (ja) * | 1995-06-13 | 1996-12-24 | Shimeo Seimitsu Kk | 電子部品収納用容器 |
JPH11274889A (ja) * | 1998-03-24 | 1999-10-08 | Tokyo Denpa Co Ltd | 水晶片の保持機構 |
JP2000188348A (ja) * | 1998-12-21 | 2000-07-04 | Nec Kansai Ltd | 気密パッケージ、その製造用構体、その製造用構体の製造方法および気密パッケージの製造方法 |
JP4060972B2 (ja) * | 1999-01-29 | 2008-03-12 | セイコーインスツル株式会社 | 圧電振動子及びその製造方法 |
JP2000232332A (ja) * | 1999-02-09 | 2000-08-22 | Toyo Commun Equip Co Ltd | 表面実装型圧電共振子 |
JP2000340686A (ja) * | 1999-05-28 | 2000-12-08 | Nec Kansai Ltd | 封止構体 |
JP2000340691A (ja) * | 1999-05-26 | 2000-12-08 | Nec Kansai Ltd | 絶縁パッケージ |
CN1255945C (zh) * | 2000-08-07 | 2006-05-10 | 日本板硝子株式会社 | 晶体振子组件、其制造方法及电子元件组件用的若干连体玻璃板的制造方法 |
JP2002353766A (ja) * | 2001-03-19 | 2002-12-06 | Seiko Epson Corp | 圧電デバイス |
JP2004172752A (ja) * | 2002-11-18 | 2004-06-17 | Seiko Epson Corp | 圧電デバイスの製造方法、ならびに圧電デバイスを利用した携帯電話装置ならびに圧電デバイスを利用した電子機器 |
JP2006073679A (ja) * | 2004-08-31 | 2006-03-16 | Citizen Watch Co Ltd | 電子部品封止体の製造方法および製造装置 |
JP2007089117A (ja) * | 2005-08-24 | 2007-04-05 | Seiko Instruments Inc | 圧電振動子、発振器、電子部品、電子機器、圧電振動子の製造方法及び電子部品の製造方法 |
-
2008
- 2008-11-28 JP JP2010540272A patent/JP5162675B2/ja not_active Expired - Fee Related
- 2008-11-28 WO PCT/JP2008/071644 patent/WO2010061468A1/ja active Application Filing
- 2008-11-28 CN CN2008801322429A patent/CN102227872A/zh active Pending
-
2009
- 2009-11-23 TW TW098139735A patent/TW201034375A/zh unknown
-
2011
- 2011-05-20 US US13/112,472 patent/US8638180B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07249957A (ja) * | 1994-03-11 | 1995-09-26 | Matsushita Electric Ind Co Ltd | 電子部品及びその形成方法 |
JP2002124845A (ja) * | 2000-08-07 | 2002-04-26 | Nippon Sheet Glass Co Ltd | 水晶振動子パッケージ及びその製造方法 |
JP2002319839A (ja) * | 2001-02-19 | 2002-10-31 | Seiko Epson Corp | 圧電デバイス |
JP2003204240A (ja) * | 2001-10-31 | 2003-07-18 | Piedekku Gijutsu Kenkyusho:Kk | 水晶ユニットとその製造方法 |
JP2003209198A (ja) * | 2001-11-09 | 2003-07-25 | Nippon Sheet Glass Co Ltd | 電子部品パッケージ |
JP2004254238A (ja) * | 2003-02-21 | 2004-09-09 | Seiko Epson Corp | 圧電デバイスとその製造方法ならびに圧電デバイスを利用した携帯電話装置および圧電デバイスを利用した電子機器 |
JP2006196932A (ja) * | 2003-05-07 | 2006-07-27 | Seiko Epson Corp | 音叉型圧電デバイスの製造方法および音叉型圧電デバイス |
JP2008098909A (ja) * | 2006-10-11 | 2008-04-24 | Epson Toyocom Corp | 圧電振動片および圧電デバイス |
JP2008211570A (ja) * | 2007-02-27 | 2008-09-11 | Citizen Holdings Co Ltd | 振動子封止体の製造方法及び振動子封止体ならびに物理量センサ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012009969A (ja) * | 2010-06-23 | 2012-01-12 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス及びその製造方法 |
US8729775B2 (en) | 2010-06-23 | 2014-05-20 | Nihon Dempa Kogyo Co., Ltd. | Piezoelectric vibrating devices and methods for manufacturing same |
JP2013251743A (ja) * | 2012-05-31 | 2013-12-12 | Nippon Dempa Kogyo Co Ltd | 弾性表面波デバイスとその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5162675B2 (ja) | 2013-03-13 |
US20110215879A1 (en) | 2011-09-08 |
TW201034375A (en) | 2010-09-16 |
US8638180B2 (en) | 2014-01-28 |
JPWO2010061468A1 (ja) | 2012-04-19 |
CN102227872A (zh) | 2011-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5134357B2 (ja) | 圧電振動子の製造方法 | |
JP5103297B2 (ja) | 圧電振動子の製造方法 | |
WO2009101733A1 (ja) | 圧電振動子、圧電振動子の製造方法、発振器、電子機器及び電波時計 | |
WO2009104329A1 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
WO2009104327A1 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP5065494B2 (ja) | 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 | |
JP5189378B2 (ja) | 圧電振動子の製造方法 | |
JP5121934B2 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器および電波時計 | |
JP5162675B2 (ja) | 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器及び電波時計 | |
JP5479931B2 (ja) | 圧電振動子、発振器、電子機器および電波時計 | |
JP5258958B2 (ja) | 圧電振動子の製造方法及び基板の製造方法 | |
JP5385037B2 (ja) | 圧電振動片、圧電振動子、発振器、電子機器及び電波時計並びに圧電振動片の製造方法 | |
JP5421690B2 (ja) | パッケージの製造方法 | |
JP5128671B2 (ja) | 圧電振動子、発振器、電子機器及び電波時計、並びに圧電振動子の製造方法 | |
JP5184648B2 (ja) | 圧電振動子の製造方法 | |
WO2010097901A1 (ja) | 陽極接合方法、パッケージの製造方法、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
WO2010023729A1 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器および電波時計 | |
JP5827088B2 (ja) | 電子部品の端子接続構造、パッケージ、圧電振動子、発振器、電子機器および電波時計 | |
JP2013074517A (ja) | パッケージの製造方法、圧電振動子、発振器、電子機器および電波時計 | |
JP5791322B2 (ja) | パッケージの製造方法 | |
JP2013031111A (ja) | パッケージの製造方法、圧電振動子、発振器、電子機器および電波時計 | |
JP2011250371A (ja) | パッケージの製造方法、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
JP2011119350A (ja) | パッケージの製造方法、圧電振動子、発振器、電子機器及び電波時計 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880132242.9 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08878425 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2010540272 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08878425 Country of ref document: EP Kind code of ref document: A1 |