WO2010004885A1 - 表面処理銅箔 - Google Patents
表面処理銅箔 Download PDFInfo
- Publication number
- WO2010004885A1 WO2010004885A1 PCT/JP2009/061710 JP2009061710W WO2010004885A1 WO 2010004885 A1 WO2010004885 A1 WO 2010004885A1 JP 2009061710 W JP2009061710 W JP 2009061710W WO 2010004885 A1 WO2010004885 A1 WO 2010004885A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper foil
- treated copper
- treated
- treatment
- component
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 178
- 239000011889 copper foil Substances 0.000 title claims abstract description 159
- 238000000034 method Methods 0.000 claims abstract description 52
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 33
- 229920005989 resin Polymers 0.000 claims abstract description 32
- 239000011347 resin Substances 0.000 claims abstract description 32
- 239000002335 surface treatment layer Substances 0.000 claims abstract description 30
- 238000011282 treatment Methods 0.000 claims abstract description 30
- 238000002844 melting Methods 0.000 claims abstract description 26
- 238000004140 cleaning Methods 0.000 claims abstract description 25
- 230000008018 melting Effects 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 33
- 239000003870 refractory metal Substances 0.000 claims description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- 238000005240 physical vapour deposition Methods 0.000 claims description 13
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 9
- 239000005751 Copper oxide Substances 0.000 claims description 9
- 229910000431 copper oxide Inorganic materials 0.000 claims description 9
- 238000007788 roughening Methods 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 26
- 239000002184 metal Substances 0.000 abstract description 26
- 239000000126 substance Substances 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 5
- 238000005253 cladding Methods 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 description 24
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 15
- 239000011651 chromium Substances 0.000 description 15
- 229910052804 chromium Inorganic materials 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- 239000011888 foil Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000004381 surface treatment Methods 0.000 description 7
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- 230000001737 promoting effect Effects 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- -1 argon ions Chemical class 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000004695 Polyether sulfone Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000002848 electrochemical method Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920006393 polyether sulfone Polymers 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000002920 hazardous waste Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- DQIPXGFHRRCVHY-UHFFFAOYSA-N chromium zinc Chemical compound [Cr].[Zn] DQIPXGFHRRCVHY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000469 dry deposition Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/06—Coating on the layer surface on metal layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/26—Polymeric coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/28—Multiple coating on one surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/206—Insulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/538—Roughness
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/714—Inert, i.e. inert to chemical degradation, corrosion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/732—Dimensional properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/75—Printability
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0317—Thin film conductor layer; Thin film passive component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0323—Carbon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
- Y10T428/12438—Composite
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12625—Free carbon containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present invention relates to a surface-treated copper foil.
- the present invention relates to a surface-treated copper foil for producing a printed wiring board obtained by using a dry film forming method for forming a surface-treated layer of a surface-treated copper foil.
- chromium component is widely used as chromium plating or chromate treatment etc. as a rust prevention element of the copper foil for conventional printed wiring boards, and a surface modification element.
- chromate treatment has been used for most copper foils on the market in recent years.
- Patent Document 1 discloses adhesion to a base material (adhesive strength between the base material and copper foil), moisture resistance, chemical resistance, and heat resistance.
- An excellent copper foil for printed wiring board comprising a metal chromium layer deposited on one or both sides of the copper foil, for example, a copper foil for printed wiring board having a metal chromium layer deposited by sputtering, and copper foil
- a printed wiring board having a metal chromium layer deposited on the opposite surface of the copper foil, for example, a metal chromium layer deposited by sputtering, on one side of Copper foil for use is disclosed.
- the oxidation number is trivalent or hexavalent.
- the toxicity to living organisms is much higher with hexavalent chromium, and the mobility in soil is greater with hexavalent chromium compounds, which has a higher environmental impact.
- Patent Document 3 is a metal foil having an adhesion promoting layer on at least one surface, wherein the adhesion promoting layer contains at least one silane coupling agent and is characterized by the absence of chromium, Metal foil characterized by the fact that the base surface of the metal foil formed under the adhesion promoting layer has no surface roughness added or there is no zinc or chromium layer attached to the base surface The concept including the copper foil which does not use chromium is disclosed.
- the metal in the metal layer being indium, tin, nickel, cobalt, brass, bronze, or two or more of these metals
- the metal in the metal layer being tin, a chromium-zinc mixture, nickel, molybdenum
- a metal foil selected from the group consisting of aluminum, and a mixture of two or more of these metals is disclosed.
- a rust-proofing layer is used to protect copper foil from atmospheric oxidation and ensure long-term storage.
- the adhesion to the base resin changes depending on the type of the rust-proofing layer, especially the circuit peeling strength after processing into a printed wiring board, the chemical resistance deterioration rate of the peeling strength. It has a great influence on the moisture absorption deterioration rate.
- the present inventor has conceived that good adhesion can be obtained with the insulating resin substrate by using the chromium-free surface-treated copper foil described below.
- the surface-treated copper foil according to the present invention will be described.
- the surface-treated copper foil according to the present invention is a surface-treated copper foil in which a surface-treated layer is provided on a laminated surface of a copper foil used when a copper-clad laminate is produced by laminating with an insulating resin base material, and a cleaning treatment is performed.
- a surface treatment layer formed by adhering a high melting point metal component having a melting point of 1400 ° C. or higher by a dry film forming method and further adhering a carbon component to the bonded surface of the copper foil subjected to the above is provided.
- the refractory metal component having a melting point of 1400 ° C. or higher constituting the surface treatment layer provided on the bonding surface of the copper foil of the surface-treated copper foil according to the present invention is attached in an amount equivalent to 1 nm to 10 nm by physical vapor deposition. It is preferable.
- the carbon component constituting the surface treatment layer provided on the bonding surface of the surface-treated copper foil according to the present invention is preferably attached in an equivalent thickness of 1 nm to 5 nm by physical vapor deposition.
- the surface-treated copper foil according to the present invention preferably uses a titanium component as the refractory metal component having a melting point of 1400 ° C. or higher.
- the copper foil used for the surface-treated copper foil according to the present invention preferably has a bonded surface that does not include a roughening treatment and that has a surface roughness (Rzjis) of 2.0 ⁇ m or less.
- the cleaning treatment applied to the surface-treated copper foil according to the present invention is preferably a treatment for removing copper oxide on the surface of the copper foil.
- the cleaning treatment applied to the surface-treated copper foil according to the present invention is also preferably a treatment in which copper is physically vapor-deposited on the surface of the copper foil that forms a copper layer using a dry film forming method on the surface of the copper foil.
- the bonding surface of the copper foil used as the bonding surface for the insulating resin base material is subjected to a cleaning treatment, and each component of a refractory metal component having a melting point of 1400 ° C. or higher and a carbon component is sequentially applied It is obtained by adhering. Then, when depositing each of the high melting point metal component having a melting point of 1400 ° C. or higher and the carbon component, a dry film forming method (including a physical vapor deposition method) is actively used.
- a dry film forming method including a physical vapor deposition method
- the formation of the surface treatment layer is not an electrochemical method that has been conventionally used, but a dry film formation method is actively used to form a surface treatment layer that is completely different from the surface treatment of the conventional electrolytic copper foil. It becomes possible.
- the surface-treated copper foil according to the present invention the copper foil when processed into a copper-clad laminate can be obtained without subjecting the bonded surface of the copper foil to a roughening treatment and obtaining an anchor effect on the insulating resin substrate.
- the adhesiveness and the adhesiveness of the circuit when processed into a printed wiring board can be set to a peel strength with no practical problem.
- the surface-treated copper foil according to the present invention is subjected to a cleaning treatment on the bonding surface of the copper foil used as the bonding surface for the insulating resin base material. Then, thereafter, a high melting point metal component having a melting point of 1400 ° C. or higher and a carbon component are sequentially deposited. By doing in this way, the adhesiveness of the copper foil surface, a refractory metal component having a melting point of 1400 ° C. or higher, and a carbon component is dramatically improved.
- the surface-treated copper foil according to the present invention is provided with a surface-treated layer on the bonding surface of the copper foil used when producing a copper-clad laminate by laminating with an insulating resin base material. It is a surface-treated copper foil. Therefore, it is necessary to provide a surface treatment layer at least on the bonding surface of the copper foil, but in order to ensure long-term storage as the surface treatment copper foil, a surface treatment layer for obtaining a rust prevention effect on the opposite surface May be provided. At this time, as the surface treatment layer provided on the opposite surface, a surface treatment layer similar to the bonded surface may be provided. However, if only the antirust effect is expected for the surface treatment on the opposite side, the use of inorganic rust prevention containing zinc, organic rust prevention using benzotriazole, imidazole, etc. in consideration of cost Is possible.
- the surface-treated copper foil which concerns on this invention is obtained by using the untreated copper foil which is not provided with the surface treatment layer.
- the copper foil referred to here can be any of an electrolytic copper foil and a rolled copper foil regardless of the production method.
- the copper foil thickness at this time there is no special limitation also about the copper foil thickness at this time, The use of copper foil of arbitrary thickness is possible according to a use. In general, a copper foil having a thickness in the range of 6 ⁇ m to 300 ⁇ m is used. And about the copper foil of thickness less than 6 micrometers, a carrier foil and an ultra-thin copper foil form the state temporarily bonded together via the joining interface, and the ultra-thin state of the state supported by the carrier foil Use as copper foil (copper foil with carrier foil) is preferred.
- the surface treatment layer provided on the bonding surface of the copper foil and the insulating resin base material described above will be described.
- a cleaning process is performed on the bonding surface of the copper foil that forms the surface-treated layer.
- This cleaning treatment is performed in order to form a state free from copper oxide as much as possible on the surface of the copper foil and to bring it close to the state in which the metallic copper is exposed.
- the adhesion between the copper foil and the surface treatment layer may be reduced due to the oxidation layer or contamination formed on the copper foil surface, but by performing this cleaning treatment, excess copper oxidation on the copper foil surface.
- the cleaning process should just be performed to the bonding surface side of a copper foil and an insulating resin base material, ie, the side in which a surface treatment layer is formed, and may be performed to both surfaces of the copper foil used as a foundation
- a cleaning process for removing copper oxide from the surface of the copper foil as the base will be described.
- the cleaning treatment method in this case include sputtering treatment and plasma treatment.
- a sputtering process in a vacuum chamber, argon ions, nitrogen ions, etc. are accelerated with an ion gun, etc., collided with the copper foil surface, and ionized and knocked out copper oxide on the copper foil surface, The copper oxide is mainly removed to expose the copper as much as possible on the copper foil surface, and the copper foil surface is cleaned. At this time, even if the sputtering process and the electron shower are used in combination, good cleaning can be performed.
- plasma treatment the copper oxide on the surface of the copper foil is removed by instantaneously sublimating the copper oxide on the surface of the copper foil using a capacitively coupled plasma source or the like. Clean.
- the dry film-forming method used in the cleaning method is a vapor phase reaction method such as chemical vapor deposition in addition to a so-called physical vapor deposition method such as a sputtering vapor deposition method, a vacuum vapor deposition method and an EB vapor deposition method.
- a vapor phase reaction method such as chemical vapor deposition in addition to a so-called physical vapor deposition method such as a sputtering vapor deposition method, a vacuum vapor deposition method and an EB vapor deposition method.
- a copper target material is used to land copper atoms on the surface of the copper foil in a vacuum chamber so that fresh metallic copper is exposed.
- the thickness of the copper film formed on the surface of the copper foil is reduced in order to reduce variation.
- the thickness is preferably 10 nm or more.
- a surface treatment layer is then formed.
- a refractory metal component having a melting point of 1400 ° C. or higher is adhered to the bonding surface of the copper foil. If only the carbon described later is attached to the surface of the copper foil without attaching the refractory metal component, the adhesion state between the surface-treated copper foil and the insulating resin base material is likely to vary, particularly the copper-clad laminate. This is because variation due to the measurement position in the same plane is not preferable.
- the high melting point metal component having a melting point of 1400 ° C. or higher any of titanium, nickel, cobalt, zirconium, and tungsten is preferably used.
- the refractory metal component having a melting point of 1400 ° C. or higher is preferably deposited by a dry deposition method.
- a physical vapor deposition method such as sputtering vapor deposition, vacuum vapor deposition, or EB vapor deposition.
- a high melting point metal component having a melting point of 1400 ° C. or higher (hereinafter simply referred to as “high melting point metal component”) is attached in an equivalent thickness of 1 nm to 10 nm.
- the adhesion amount of the refractory metal component is less than 1 nm, the effect of attaching the refractory metal component cannot be obtained, and good adhesion between the surface-treated copper foil and the insulating resin substrate cannot be obtained.
- the amount of the refractory metal component exceeds 10 nm, the amount of the refractory metal component attached becomes too large, and it becomes difficult to dissolve and remove with an etching solution or the like when processing into a printed wiring board.
- the conversion thickness is the thickness obtained by converting with the value obtained by melt
- a carbon component is attached to the surface of the refractory metal component.
- the carbon component is preferably attached by physical vapor deposition.
- argon ions etc. are made to collide with a carbon target material, and a carbon component is made to land on the surface of copper foil.
- the carbon component at this time is deposited in an equivalent thickness of 1 nm to 5 nm.
- the carbon component adhesion amount is less than 1 nm, the effect of adhering carbon is not obtained, and only the refractory metal component is adhered, and good adhesion between the surface-treated copper foil and the insulating resin substrate Cannot be obtained.
- the carbon component amount exceeds 5 nm, the carbon component adhesion amount increases too much, and when processed into a printed wiring board, the carbon component that increases the conductor resistance increases on the lower surface of the copper foil circuit. It is not preferable.
- the method for measuring the equivalent thickness of the carbon component is to place the sample piece of the surface-treated copper foil according to the present invention in a high-temperature oxygen stream of a gas analyzer, and react the oxygen and the carbon component in the stream, This is converted into carbon monoxide and carbon dioxide gas, and the amount of carbon monoxide and carbon dioxide gas is measured to determine the amount of carbon component per unit area, and further converted into the thickness per unit area.
- the surface treatment layer described above is suitable for a surface-treated copper foil for use in bonding to an insulating resin substrate without performing a roughening treatment.
- Ordinary copper foil is subjected to a roughening treatment on the surface before the surface treatment.
- corrugation of the said roughening process will bite into the inside of an insulating resin base material by press work, and will improve adhesiveness.
- etching time overetching time
- the overetching time the more the copper foil circuit that has already been etched is dissolved, and the etching factor of the copper foil circuit deteriorates.
- the surface-treated copper foil which concerns on this invention, even if it uses untreated copper foil for manufacture of surface-treated copper foil, favorable adhesiveness with an insulating resin layer can be obtained.
- the surface roughness (Rzjis) of the untreated copper foil is 2.0 ⁇ m or less, the over-etching time during the etching process can be drastically shortened, and the etching factor of the formed copper foil circuit can be easily improved. It becomes possible to make it.
- the surface roughness is shown as the value of the untreated copper foil bonding surface, but even if the surface treatment layer referred to in the present invention is formed, as long as it is measured with a stylus type roughness meter, the surface treatment This is because the value of the surface roughness does not change greatly between before and after.
- the above-mentioned surface-treated copper foil includes the following step A and step B. Hereinafter, it describes for every process.
- Step A In this step, the copper foil surface is cleaned.
- the cleaning treatment referred to here is a treatment for exposing the copper metal to the surface of the copper foil that is the base for forming the surface treatment layer. Since the cleaning process has already been described, the description thereof is omitted.
- Step B A surface-treated layer made of a refractory metal component having a melting point of 1400 ° C. or higher and a carbon layer is formed on the cleaned copper foil by a dry film forming method to obtain a surface-treated copper foil.
- sputtering vapor deposition method which belongs to the dry-type film-forming method for film formation of this refractory metal component of melting
- the sputtering deposition conditions are not particularly limited, but a titanium target, a nickel target, or the like is used, the ultimate vacuum Pu is 1 ⁇ 10 ⁇ 3 Pa or less, the sputtering pressure PAr is 0.1 Pa to 3.0 Pa, the sputtering power Argon ion conditions and the like can be employed for the sputtering type at a density of 0.1 W / cm 2 to 3 W / cm 2 for 5 to 20 seconds.
- surface-treated copper foils of Examples 1 to 5 were prepared in which the adhesion amounts of the titanium component and the carbon component were adjusted to the equivalent thicknesses shown in Table 1. Thereafter, a copper foil with resin coated with a polyethersulfone resin was applied to the FR-4 base material, and then the adhesion of the surface to be bonded to the FR-4 base material was evaluated.
- Cleaning treatment An example of obtaining a state in which metallic copper is exposed on the surface of the copper foil by using a sputtering vapor deposition method will be shown as the cleaning treatment.
- a water-cooled DC magnetron sputtering apparatus was used as the sputtering apparatus.
- the sputtering pressure PAr is 0.1 Pa, and the sputtering power is 1500 W for 10 seconds.
- a 50 nm thick copper component was deposited.
- Titanium component adhesion of: adhering a titanium component into the bonding surface of the copper foil is a water-cooled DC magnetron sputtering apparatus, using a titanium target size of 150 mm ⁇ 300 mm, as sputtering conditions, the ultimate vacuum Pu is 1 ⁇ 10 -
- the titanium component was deposited by adopting the conditions of 3 Pa or less, sputtering pressure PAr of 0.1 Pa to 1 Pa, and sputtering power of 100 W to 1000 W for 10 seconds.
- Adhesion of carbon component Subsequently, the carbon component was adhered to the bonded surface of the copper foil on which the adhesion of the titanium component was completed.
- the ultimate vacuum Pu is less than 1 ⁇ 10 ⁇ 4 Pa
- the sputtering pressure PAr is 0.1 Pa to 1 Pa
- the sputtering power is used.
- the carbon component was adhered by adopting conditions of 500 W to 3000 W.
- the titanium component and the carbon component were attached by adjusting the power density so that the amount of each attached was the equivalent thickness shown in Example 1 to Example 5 in Table 1.
- the peel strength after soldering is the peel strength measured by allowing a printed wiring board test piece to float in a 260 ° C. solder bath for 10 minutes and then cooling to room temperature.
- PCT is a kind of test of interlayer connection reliability of a printed wiring board.
- the peel strength after PCT is the peel strength measured after holding a printed wiring board test piece in a high temperature and high pressure atmosphere of 121 ° C. ⁇ 100% RH for 24 hours. That is, the moisture resistance of the circuit can be evaluated by measuring the peel strength by PCT.
- a surface-treated copper foil in which the adhesion amount of the titanium component, which is a refractory metal component, is 0.4 nm outside the scope of the present invention is shown.
- Table 1 compared with the surface-treated copper foil of Comparative Example 1, all of the surface-treated copper foils of Examples 1 to 5 have higher peel strength values.
- the surface-treated copper foil according to the present invention is subjected to a cleaning treatment on the surface of the copper foil used as a laminating surface for the insulating resin base material, and a high-melting point metal component and a carbon component having a melting point of 1400 ° C. or higher are mainly subjected to physical vapor deposition. They are used and attached sequentially.
- the surface treatment layer has excellent film thickness uniformity in the same plane and there is no compositional variation.
- a surface treatment layer can be formed.
- variation due to the measurement location of the adhesion between the copper foil and the insulating resin layer when processed into a copper-clad laminate is reduced.
- the surface-treated copper foil which concerns on this invention can be equipped with the surface treatment layer suitable in order to adhere
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Laminated Bodies (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
[比較例]
Claims (7)
- 絶縁樹脂基材と張り合わせて銅張積層板を製造する際に用いる銅箔の張り合わせ面に表面処理層を設けた表面処理銅箔であって、
清浄化処理を施した前記銅箔の張り合わせ面に、乾式成膜法で融点1400℃以上の高融点金属成分を付着させ、更に炭素成分を付着させて形成した表面処理層を備えることを特徴とする表面処理銅箔。 - 前記銅箔の張り合わせ面へ設ける表面処理層を構成する融点1400℃以上の高融点金属成分は、物理蒸着法を用いて1nm~10nmの換算厚さ分を付着させるものである請求項1に記載の表面処理銅箔。
- 前記銅箔の張り合わせ面へ設ける表面処理層を構成する炭素成分は、物理蒸着法を用いて1nm~5nmの換算厚さ分を付着させるものである請求項1に記載の表面処理銅箔。
- 前記融点1400℃以上の高融点金属成分は、チタン成分である請求項1に記載の表面処理銅箔。
- 前記銅箔は、その張り合わせ面が、粗化処理を備えず且つ表面粗さ(Rzjis)が2.0μm以下であるものを用いる請求項1に記載の表面処理銅箔。
- 前記清浄化処理は、銅箔表面の銅酸化物を除去する処理である請求項1に記載の表面処理銅箔。
- 前記清浄化処理は、銅箔表面に乾式成膜法を用いて銅層を形成するものである請求項1に記載の表面処理銅箔。
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US13/002,394 US8394509B2 (en) | 2008-07-11 | 2009-06-26 | Surface-treated copper foil |
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JP2008181266A JP5255349B2 (ja) | 2008-07-11 | 2008-07-11 | 表面処理銅箔 |
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JP2005344174A (ja) * | 2004-06-03 | 2005-12-15 | Mitsui Mining & Smelting Co Ltd | 表面処理銅箔及びその表面処理銅箔を用いて製造したフレキシブル銅張積層板並びにフィルムキャリアテープ |
KR100951211B1 (ko) * | 2004-09-10 | 2010-04-05 | 미쓰이 긴조꾸 고교 가부시키가이샤 | 프라이머 수지층을 구비한 캐리어박 부착 전해 동박 및 그제조 방법 |
CN101146933B (zh) * | 2005-03-31 | 2010-11-24 | 三井金属矿业株式会社 | 电解铜箔及电解铜箔的制造方法、采用该电解铜箔得到的表面处理电解铜箔、采用该表面处理电解铜箔的覆铜层压板及印刷电路板 |
TW200704833A (en) * | 2005-06-13 | 2007-02-01 | Mitsui Mining & Smelting Co | Surface treated copper foil, process for producing surface treated copper foil, and surface treated copper foil with very thin primer resin layer |
JP2007146289A (ja) * | 2005-10-31 | 2007-06-14 | Mitsui Mining & Smelting Co Ltd | 電解銅箔の製造方法、該製造方法で得られる電解銅箔、該電解銅箔を用いて得られる表面処理銅箔及び該電解銅箔又は該表面処理銅箔を用いて得られる銅張積層板 |
TW200738913A (en) * | 2006-03-10 | 2007-10-16 | Mitsui Mining & Smelting Co | Surface treated elctrolytic copper foil and process for producing the same |
WO2007125994A1 (ja) * | 2006-04-28 | 2007-11-08 | Mitsui Mining & Smelting Co., Ltd. | 電解銅箔、その電解銅箔を用いた表面処理銅箔及びその表面処理銅箔を用いた銅張積層板並びにその電解銅箔の製造方法 |
JP5024930B2 (ja) * | 2006-10-31 | 2012-09-12 | 三井金属鉱業株式会社 | 表面処理銅箔、極薄プライマ樹脂層付表面処理銅箔及びその表面処理銅箔の製造方法並びに極薄プライマ樹脂層付表面処理銅箔の製造方法 |
-
2008
- 2008-07-11 JP JP2008181266A patent/JP5255349B2/ja not_active Expired - Fee Related
-
2009
- 2009-06-26 WO PCT/JP2009/061710 patent/WO2010004885A1/ja active Application Filing
- 2009-06-26 KR KR1020117000305A patent/KR101599511B1/ko not_active IP Right Cessation
- 2009-06-26 CN CN2009801265223A patent/CN102089454B/zh not_active Expired - Fee Related
- 2009-06-26 US US13/002,394 patent/US8394509B2/en not_active Expired - Fee Related
- 2009-06-30 TW TW098121954A patent/TWI434637B/zh not_active IP Right Cessation
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JP2007081274A (ja) * | 2005-09-16 | 2007-03-29 | Oike Ind Co Ltd | フレキシブル回路用基板 |
JP2007307767A (ja) * | 2006-05-17 | 2007-11-29 | Mitsui Mining & Smelting Co Ltd | キャリア箔付銅箔、キャリア箔付銅箔の製造方法、キャリア箔付表面処理銅箔及びそのキャリア箔付表面処理銅箔を用いた銅張積層板 |
WO2007135972A1 (ja) * | 2006-05-19 | 2007-11-29 | Mitsui Mining & Smelting Co., Ltd. | キャリアシート付銅箔、キャリアシート付銅箔の製造方法、キャリアシート付表面処理銅箔及びそのキャリアシート付表面処理銅箔を用いた銅張積層板 |
Also Published As
Publication number | Publication date |
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CN102089454B (zh) | 2013-01-30 |
CN102089454A (zh) | 2011-06-08 |
KR20110039237A (ko) | 2011-04-15 |
KR101599511B1 (ko) | 2016-03-03 |
JP5255349B2 (ja) | 2013-08-07 |
US20110189503A1 (en) | 2011-08-04 |
TWI434637B (zh) | 2014-04-11 |
US8394509B2 (en) | 2013-03-12 |
TW201016090A (en) | 2010-04-16 |
JP2010018855A (ja) | 2010-01-28 |
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