Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
  • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
  • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/851—Wavelength conversion means
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
  • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
  • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
  • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Definitions

• the invention relates to a method for producing a plurality of optoelectronic components.
• connection carrier For the production of optoelectronic components which are to be fastened and contacted after manufacture on a connection carrier, often a series of individual processing steps are required, which in particular must be carried out individually for the production of each component.
• An object of the present invention is to provide a method for producing a plurality of optoelectronic components, which can be produced in a simplified manner.
• Providing a semiconductor body carrier having on a first main surface a plurality of each provided with a contact structure semiconductor body having a suitable for generating electromagnetic radiation comprises active layer in a semiconductor layer sequence
• planar fill structure Forming a planar fill structure on the first major surface, the planar fill structure at least partially covering regions on the contact structure and the semiconductor body carrier without covering the semiconductor body.
• a production concept for optoelectronic components has been specified in which the construction of individual optoelectronic components or of a plurality of optoelectronic components combined to form a module takes place at the wafer level level.
• the optoelectronic semiconductor bodies arranged on a semiconductor body carrier are provided with a housing by means of a filling structure.
• a chip sheath can be formed, which consists of a heterogeneous plastic having ceramic-like properties, such as epoxy-silicon mixtures. But it is also conceivable one
• potting compound which consists of a plastic solid powder mixture. Characteristic of the manufacturing concept is that the filling structure forms a planar layer.
• the step of forming the planar filling structure is carried out by forming a structured resist layer which covers at least the semiconductor body, the planar filling structure is formed outside the patterned resist layer and the structured resist layer is then removed.
• the filling structure serving as a housing is formed by means of a lithographic production method, which allows the lithographic precision customary in the production of semiconductor bodies also to be extended to the production of housing casings.
• the semiconductor body is produced as a luminescence diode chip, preferably as a thin-film luminescence diode chip.
• a functional semiconductor layer sequence comprising in particular a radiation-emitting active layer is first epitaxially grown on a growth substrate, then a new support is applied to the surface of the semiconductor layer sequence opposite the growth substrate and subsequently the growth substrate is separated.
• the growth substrates used for nitride compound semiconductors for example SiC, sapphire or GaN, are comparatively expensive, this method offers the particular advantage that the growth substrate can be reused.
• the detachment of a growth substrate made of sapphire from a semiconductor layer sequence of a Nitride compound semiconductor can be done for example with a lift-off method.
• the luminescence diode chip may have an epitaxial layer sequence based on a III-V compound semiconductor material, preferably nitride compound semiconductor, but also phosphide compound semiconductor materials or arsenide compound semiconductor materials.
• nitride compound semiconductors in the present context means that the active epitaxial layer sequence or at least one layer thereof comprises a nitride III / V compound semiconductor material, preferably Al x Ga v Ini_ ⁇ -yN, where O ⁇ x ⁇ l, O ⁇ y ⁇ l and x + y ⁇ 1.
• this material does not necessarily have to have a mathematically exact composition according to the above formula, but instead it may have one or more dopants and additional constituents which have the characteristic physical properties of Al x GayIn ⁇ _ x _yN
• the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), although these may be partially replaced by small amounts of other substances.
• the active region in particular the semiconductor body, preferably comprises or consists of Al n Ga Jn In 1-J1-111 P, where O ⁇ n ⁇ l, O ⁇ m ⁇ l and n + m ⁇ 1, preferably with n ⁇ 0, n ⁇ 1, m ⁇ 0 and / or m ⁇ 1.
• This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may contain one or more dopants as well as additional Have ingredients that do not substantially alter the physical properties of the material.
• the above formula includes only the essential constituents of the crystal lattice (Al, Ga, In, P), even though these may be partially replaced by small amounts of other substances.
• the active region in particular the semiconductor body, preferably comprises or consists of Al n Ga 1n In 1-J1-111 As, where O ⁇ n ⁇ l, O ⁇ m ⁇ l and n + m ⁇ 1, preferably with n ⁇ O, n ⁇ l, m ⁇ O and / or m ⁇ 1.
• this material does not necessarily have to have a mathematically exact composition according to the above formula, but rather one or more dopants as well as additional
• the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, As), even if these can be partially replaced by small amounts of other substances.
• the step of providing the semiconductor body carrier comprises that the plurality of applied on a semiconductor body carrier
• Semiconductor body are transferred from a wafer composite individually to the semiconductor body carrier.
• the semiconductor body carrier with the plurality of semiconductor bodies can accommodate optoelectronic chip segments of different wafers and assemble into a new composite.
• This is particularly advantageous to different variations in the radiation behavior Semiconductor body to compensate for yield losses or the like.
• it is possible to test the multiplicity of semiconductor bodies beforehand, for example by means of a wafer tester, so that the emission characteristic of the optoelectronic component fulfills certain specifications.
• Another possibility is to arrange semiconductor bodies of different semiconductor wafers on the semiconductor body carrier so that modules with different color impressions or RGB modules can be produced.
• the pick-and-place technologies known in the art may be used.
• a film may be provided which takes over semiconductor bodies produced on a wafer and deposits them on the semiconductor body carrier.
• FIGS. 1A to 1C each show exemplary embodiments of an optoelectronic component in a schematic cross-sectional view
• FIG. 2 shows a further exemplary embodiment of a plurality of optoelectronic components in a plan view
• FIGS. 3A to 3E show further exemplary embodiments for producing a plurality of optoelectronic components in a schematic cross-sectional view
• FIG. 5A shows a further exemplary embodiment of optoelectronic components in a plan view
• FIG. 5B shows a schematic cross-sectional view of optoelectronic components according to FIG. 5A
• FIG. 6 shows a further exemplary embodiment of optoelectronic components in a plan view, Figure 7A and 7B, another embodiment of the
• FIG. 8 shows a further exemplary embodiment of a plurality of optoelectronic components in a plan view
• FIG. 10 shows a further exemplary embodiment for producing a multiplicity of optoelectronic components, in a schematic cross-sectional view.
• FIG. 1A shows a semiconductor body carrier 10, on which a multiplicity of semiconductor bodies 14 are applied on a first main surface 12.
• the semiconductor bodies 14 each have a contact structure 20 which is suitable for electrically contacting the semiconductor body 14.
• the semiconductor body 14, which is arranged above the contact structure 20, comprises an active layer 16, which is embedded in a semiconductor layer sequence 15.
• the active layer 15 is preferably designed for generating radiation.
• the respective semiconductor body is designed as a light-emitting diode semiconductor body.
• the semiconductor body 14 comprises a semiconductor layer sequence 15.
• the semiconductor layer sequence 15 may, for example, comprise two semiconductor layers, between which the active layer 16 is arranged.
• the semiconductor layers are preferably of different conductivity types, in particular doped for different conductivity types (n-type or p-type).
• the semiconductor body 14 is furthermore preferably grown epitaxially.
• a semiconductor layer structure for the semiconductor bodies 14 may be epitaxially deposited on a growth substrate, for example by means of organometallic vapor phase epitaxy. From the semiconductor layer structure then semiconductor body can be formed, for example by means of etching.
• a radiation exit surface 18 is formed, the surface of which corresponds substantially to the size of the semiconductor structure.
• the semiconductor body 14 may be formed, for example, rectangular, wherein the side length of the rectangle may vary over a large area. For example, it is possible to form semiconductor bodies with a side length of less than 50 ⁇ m, but it is also conceivable to use large-area semiconductor bodies with side lengths of up to 5 mm.
• the semiconductor layer sequence 15 has approximately a thickness of, for example, 6 ⁇ m, whereby this value can also vary within a large range.
• the contact structure 20 is metal tracks, for example, of a sputtered metal layer produced by photolithographic techniques. Their thickness is usually a few microns.
• FIG. 1A represents only one variant of a structure of a semiconductor body.
• Other arrangements are also conceivable which differ, for example, from a different type of contacting, that is to say forming the connection carrier 20, from the exemplary embodiment according to FIG.
• FIG. 1B a semiconductor body 14 is shown, which in each case has a contact on both side surfaces which are connected to the contact structure 20. Consequently, the contacts in this embodiment are arranged on opposite sides.
• Semiconductor body carrier 10 arranged and provided on one side with an insulating material 30.
• the connections to the semiconductor layer sequence can then be arranged above or below the insulation material 30.
• the semiconductor bodies 14 are furthermore preferably arranged in accordance with a regular pattern on the semiconductor body carrier 10, as shown in FIG. It can be seen from the plan view shown in FIG. 2 that the semiconductor bodies 14 are arranged, for example, in the form of a matrix.
• the semiconductor body 14 can be arranged in a freely selectable grid on the semiconductor body carrier 10.
• the multiplicity of the semiconductor bodies 14 can originate, for example, from a wafer composite, wherein the semiconductor bodies 14 are transferred individually to the semiconductor body carrier 10. For this purpose, for example, the pick-and-place method known in the art can be used.
• Semiconductor body carrier 10 to be arranged semiconductor body 14 vorzuselekt Schlieren with respect to their radiation characteristics.
• semiconductor bodies of different wafer composites which for example have different active layers 16 suitable for generating electromagnetic radiation, so that the semiconductor bodies 14 on the semiconductor body carrier 10 can emit electromagnetic radiation having different wavelengths.
• auxiliary carrier for example a foil, preferably a thermorelease foil.
• individual processing steps are saved.
• a first exemplary embodiment for producing a plurality of optoelectronic components is described below with reference to FIGS. 3A to 3B.
• the starting point of the method are the semiconductor bodies 14 described in FIGS. 1A to 1C, which are arranged on the semiconductor body carrier 10.
• a photoresist layer is applied, which is subsequently patterned.
• the patterning of the photoresist layer can be carried out, for example, with the photolithographic exposure known in the art.
• a photoresist pattern 40 covering the semiconductor bodies 14 and parts of the contact structure 20 is obtained.
• the photoresist layer is structured in such a way that teaching areas arise on the sides of the semiconductor bodies 14.
• the photoresist layer is also removed between contact structures 20 of adjacent semiconductor bodies.
• the semiconductor body carrier 10 a variety of materials can be used. For example, it is intended to use a ceramic substrate or a silicon substrate. Other possible materials include magnesium oxide, alumina, sapphire, aluminum nitride, or other materials known to those skilled in the art.
• the filling structure 42 has a substantially identical height as the resist pattern 40.
• the filler material may be, for example, a plastic.
• benzocyclobutenes are used.
• the resist pattern 40 is removed and another planarization step is performed. The further planarization step reduces the height of the filling structure 42, so that now one with the top of the
• Semiconductor body 14 planar filling structure 44 is formed.
• the further process steps include the formation of protective diodes, the application of a converter, the formation of reflector layers or the application of optical elements, such as lenses. It should be noted, however, that these additional process steps do not necessarily all have to be performed. For example, it is conceivable to produce optoelectronic components which do not require a converter or are operated without protective diodes. Consequently, the process steps shown below are only to be understood as examples.
• FIG. 3D now shows the formation of protective diodes 46, which are arranged on the connection carrier 20 on the corresponding first contact surfaces 21 and second contact surfaces 22. Furthermore, in this process step, the electrical wiring is performed.
• the converter layer is, for example, a silicone layer into which at least one
• the at least one luminescence conversion substance may be for example YAG: Ce or a known Lumineszenzkonversionsstoff act.
• silicone layer as a carrier layer for the luminescence conversion substance has the advantage that silicone is comparatively insensitive to short-wave blue or ultraviolet radiation. This is particularly advantageous for nitride compound semiconductors
• Luminescence diode chips in which the emitted radiation usually contains at least a portion of the short-wave blue or ultraviolet spectral range.
• another transparent organic or inorganic material can act as a carrier layer for the at least one luminescence conversion substance.
• Further process steps include the application of a contact layer as a reflective contact layer. Furthermore, between a contact layer 20 and a contact layer 20 and a contact layer 20 and a contact layer 20 and a contact layer 20
• Connecting layer be arranged a barrier layer.
• the barrier layer contains, for example, TiWN.
• the barrier layer in particular prevents diffusion of material of the connection layer, which is, for example, a solder layer, into the reflective contact layer, by means of which, in particular, the reflection of the reflective contact layer could be impaired.
• the converter can be provided, for example, on a carrier film and transferred in a single step to a semiconductor body of the plurality of optoelectronic components. Consequently, time-consuming individual processing steps are saved on individual optoelectronic components.
• the converter material of the converter 48 different manufacturing methods are known in the art.
• a second embodiment of the method for producing a plurality of optoelectronic components is described below with reference to FIGS. 4A to 4E.
• the method according to FIGS. 4A to 4E differs from the method described above in that the step of further planarizing the filling structure is omitted. Consequently, the resist pattern protrudes beyond the radiation exit surface of the semiconductor body, so that a cavity is formed above it.
• This cavity can be used in the following as in
• a converter material is advantageously used, which is present in a liquid state of aggregation and cures after filling into the cavities. Furthermore, it is also provided to leave a gap between the radiation exit surface and the converter or to provide a cover. This has particular thermal benefits Use of optoelectronic components which emit radiation in the ultraviolet range.
• FIG. 4D Another variant relates to Figure 4D. There it is shown to contact the contact surfaces 21, 22 of the contact structure 20 of the first main surface 12 opposite side by means of vias 54 (so-called vias). Accordingly, it is possible to produce optoelectronic devices suitable for surface mounting.
• FIG. 3 or 4 Another variant not shown in FIG. 3 or 4 concerns the formation of protective diodes.
• a protective diode can be formed directly in the semiconductor body 10, for example by suitable doping.
• the electrical characteristic of the protective diode can be adapted to the particular application.
• This variant saves in particular the cost-intensive assembly with external protection diodes, as shown in FIG. 3D.
• the optics may consist of a plurality of lenses 52 which are arranged on a carrier 50. Accordingly, a lens 52 is now formed for each of the optoelectronic semiconductor bodies on the semiconductor body carrier 10 in a single process step.
• FIGS. 5A and 5B a further embodiment of the invention is shown with reference to FIGS. 5A and 5B. The process steps shown here follow the method steps according to FIGS. 3A to 3E or FIGS. 4A to 4E.
• the semiconductor body 10 is cut both horizontally and vertically with respect to the plane of the figure 5A.
• FIG. 5A it is possible, for example, to form modules which contain one or two LED chips.
• cuts are made through the filling material between adjacent semiconductor bodies 14, as shown schematically in FIG. 5B by means of the sectional lines 61 and 62.
• This variant relates to the application of the filling material, which consists of a potting compound according to this embodiment.
• the semiconductor body carrier 10 is provided with the potting compound 70. This can be applied, for example, in drop form.
• the semiconductor body carrier 10 is inserted between two workpieces 72 and 74, wherein the two workpieces are heated.
• the upper workpiece 74 has an opening (cavity) to the semiconductor body 14 on the
• FIG. 8 shows a further embodiment in which the multiplicity of optoelectronic components are applied to a common connection carrier.
• the outer semiconductor bodies 14 are each provided with connection surfaces 21 and 22, respectively.
• the semiconductor body lying in the interior of the arrangement is guided on a contact pad 23 by means of a bridging contact 84, which runs over the conductor track of the chip arranged above it.
• a semiconductor body carrier 10 which comprises a multiplicity of optoelectronic components.
• the semiconductor substrate carrier 10 may be a 6 "wafer, and on the left side there are shown a plurality of lenses fabricated in the wafer assembly, thus allowing, for example, the attachment of optical elements over the semiconductor body 14 in a single step to perform a plurality of optoelectronic components on a semiconductor body carrier.
• a so-called stacked semiconductor body which consists for example of three semiconductor layer sequences, which are each provided with different active layers, for example, to form red, green or blue radiating semiconductor body.
• a passivation layer can be arranged on the side flanks of this layer stack.
• a mirror 90 on the side flanks of the filling material.
• the flank angle of the side edges of the filling material can be variable.
• a process control similar to that in FIGS. 3A to 3E or 4A to 4E can be used.
• this process management differs in that the structuring of the resist layer shown, for example, in FIG. 3A is carried out such that the resist layer also covers the flanks of the semiconductor bodies 14. Consequently, after the removal of the resist structure between the semiconductor body 14 and the filling structure, a gap is created in which the passivation or the mirrors can be introduced.

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Led Devices (AREA)
• Led Device Packages (AREA)

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Publications (2)

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• 2008
  • 2008-06-30 DE DE102008030815A patent/DE102008030815A1/de not_active Withdrawn
• 2009
  • 2009-06-18 CN CN2009801119833A patent/CN101983428B/zh not_active Expired - Fee Related
  • 2009-06-18 JP JP2011515089A patent/JP5693450B2/ja not_active Expired - Fee Related
  • 2009-06-18 EP EP09771994.2A patent/EP2294614B1/de not_active Not-in-force
  • 2009-06-18 WO PCT/DE2009/000857 patent/WO2010000224A2/de not_active Ceased
  • 2009-06-18 KR KR1020107020383A patent/KR101587299B1/ko not_active Expired - Fee Related
  • 2009-06-18 US US12/922,397 patent/US8431422B2/en not_active Expired - Fee Related

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