CN101983428B - 用于制造多个光电元件的方法 - Google Patents
用于制造多个光电元件的方法 Download PDFInfo
- Publication number
- CN101983428B CN101983428B CN2009801119833A CN200980111983A CN101983428B CN 101983428 B CN101983428 B CN 101983428B CN 2009801119833 A CN2009801119833 A CN 2009801119833A CN 200980111983 A CN200980111983 A CN 200980111983A CN 101983428 B CN101983428 B CN 101983428B
- Authority
- CN
- China
- Prior art keywords
- semiconductor body
- semiconductor
- body carrier
- carrier
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008030815.3 | 2008-06-30 | ||
| DE102008030815A DE102008030815A1 (de) | 2008-06-30 | 2008-06-30 | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen |
| PCT/DE2009/000857 WO2010000224A2 (de) | 2008-06-30 | 2009-06-18 | Verfahren zur herstellung einer vielzahl von optoelektronischen bauelementen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101983428A CN101983428A (zh) | 2011-03-02 |
| CN101983428B true CN101983428B (zh) | 2013-06-12 |
Family
ID=41228784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801119833A Expired - Fee Related CN101983428B (zh) | 2008-06-30 | 2009-06-18 | 用于制造多个光电元件的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8431422B2 (enExample) |
| EP (1) | EP2294614B1 (enExample) |
| JP (1) | JP5693450B2 (enExample) |
| KR (1) | KR101587299B1 (enExample) |
| CN (1) | CN101983428B (enExample) |
| DE (1) | DE102008030815A1 (enExample) |
| WO (1) | WO2010000224A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8816383B2 (en) * | 2012-07-06 | 2014-08-26 | Invensas Corporation | High performance light emitting diode with vias |
| DE102012217776A1 (de) | 2012-09-28 | 2014-06-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102013107862A1 (de) | 2013-07-23 | 2015-01-29 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines oberflächenmontierbaren optoelektronischen Halbleiterbauteils |
| DE102014114188B4 (de) * | 2014-09-30 | 2022-01-20 | Osram Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
| DE102015103835A1 (de) * | 2015-03-16 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements |
| JP6217711B2 (ja) | 2015-08-21 | 2017-10-25 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| TWI688121B (zh) | 2018-08-24 | 2020-03-11 | 隆達電子股份有限公司 | 發光二極體結構 |
| US11038088B2 (en) | 2019-10-14 | 2021-06-15 | Lextar Electronics Corporation | Light emitting diode package |
| CN111883552B (zh) * | 2020-08-04 | 2023-09-05 | 厦门乾照光电股份有限公司 | 一种集成式led芯片模组及其制作、测试、切割方法 |
| CN118472152B (zh) * | 2024-07-12 | 2024-09-17 | 诺视科技(浙江)有限公司 | 集成反射穹顶的微显示器件及其制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5104824A (en) * | 1990-11-06 | 1992-04-14 | Bell Communications Research, Inc. | Selective area regrowth for surface-emitting lasers and other sharp features |
| CN1685530A (zh) * | 2002-09-30 | 2005-10-19 | 奥斯兰姆奥普托半导体有限责任公司 | 光电子元件和元件模块 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11177138A (ja) * | 1997-12-11 | 1999-07-02 | Stanley Electric Co Ltd | 面実装型装置およびこれを用いた発光装置または受光装置 |
| JP3829594B2 (ja) * | 2000-06-30 | 2006-10-04 | セイコーエプソン株式会社 | 素子実装方法と光伝送装置 |
| US6432752B1 (en) * | 2000-08-17 | 2002-08-13 | Micron Technology, Inc. | Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages |
| TW473951B (en) | 2001-01-17 | 2002-01-21 | Siliconware Precision Industries Co Ltd | Non-leaded quad flat image sensor package |
| DE10128271C1 (de) * | 2001-06-12 | 2002-11-28 | Liz Electronics Corp | Verfahren zur Herstellung von Dioden |
| DE10222609B4 (de) * | 2002-04-15 | 2008-07-10 | Schott Ag | Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat |
| DE10235332A1 (de) * | 2002-08-01 | 2004-02-19 | Infineon Technologies Ag | Mehrlagiger Schaltungsträger und Herstellung desselben |
| JP4603368B2 (ja) * | 2003-02-28 | 2010-12-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 構造化された金属被覆を施されたパッケージボディを有するオプトエレクトロニクス素子、この種の素子を製作する方法、およびプラスチックを含むボディに、構造化された金属被覆を施す方法 |
| JP2004304161A (ja) * | 2003-03-14 | 2004-10-28 | Sony Corp | 発光素子、発光装置、画像表示装置、発光素子の製造方法及び画像表示装置の製造方法 |
| US20070126016A1 (en) * | 2005-05-12 | 2007-06-07 | Epistar Corporation | Light emitting device and manufacture method thereof |
| US7084496B2 (en) * | 2004-01-14 | 2006-08-01 | International Business Machines Corporation | Method and apparatus for providing optoelectronic communication with an electronic device |
| AU2005232074A1 (en) * | 2004-03-29 | 2005-10-20 | LumaChip, Inc. | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
| DE102004021233A1 (de) * | 2004-04-30 | 2005-12-01 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
| JP2006108204A (ja) * | 2004-10-01 | 2006-04-20 | Renesas Technology Corp | 半導体モジュール及び電子装置 |
| DE102006032047A1 (de) * | 2006-07-10 | 2008-01-24 | Schott Ag | Verfahren zur Herstellung optoelektronischer Bauelemente und damit hergestellte Erzeugnisse |
| JP2008027999A (ja) * | 2006-07-19 | 2008-02-07 | Matsushita Electric Ind Co Ltd | 発光装置の製造方法および発光装置 |
| DE102007004303A1 (de) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement und Bauelement-Verbund |
| DE102006051746A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer Lumineszenzkonversionsschicht |
| WO2008086090A1 (en) * | 2007-01-05 | 2008-07-17 | University Of Washington | Self-assembled heterogeneous integrated optical analysis system |
| DE102007008524A1 (de) * | 2007-02-21 | 2008-08-28 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Chip mit mindestens einem Halbleiterkörper |
| DE102007030129A1 (de) * | 2007-06-29 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement |
| DE102007043877A1 (de) | 2007-06-29 | 2009-01-08 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement |
| DE102008013030A1 (de) | 2007-12-14 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
| DE102008014094A1 (de) | 2008-03-13 | 2009-09-17 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung |
-
2008
- 2008-06-30 DE DE102008030815A patent/DE102008030815A1/de not_active Withdrawn
-
2009
- 2009-06-18 CN CN2009801119833A patent/CN101983428B/zh not_active Expired - Fee Related
- 2009-06-18 JP JP2011515089A patent/JP5693450B2/ja not_active Expired - Fee Related
- 2009-06-18 EP EP09771994.2A patent/EP2294614B1/de not_active Not-in-force
- 2009-06-18 WO PCT/DE2009/000857 patent/WO2010000224A2/de not_active Ceased
- 2009-06-18 KR KR1020107020383A patent/KR101587299B1/ko not_active Expired - Fee Related
- 2009-06-18 US US12/922,397 patent/US8431422B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5104824A (en) * | 1990-11-06 | 1992-04-14 | Bell Communications Research, Inc. | Selective area regrowth for surface-emitting lasers and other sharp features |
| CN1685530A (zh) * | 2002-09-30 | 2005-10-19 | 奥斯兰姆奥普托半导体有限责任公司 | 光电子元件和元件模块 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102008030815A1 (de) | 2009-12-31 |
| KR101587299B1 (ko) | 2016-02-02 |
| WO2010000224A2 (de) | 2010-01-07 |
| JP2011526418A (ja) | 2011-10-06 |
| EP2294614B1 (de) | 2017-11-22 |
| WO2010000224A3 (de) | 2010-03-04 |
| JP5693450B2 (ja) | 2015-04-01 |
| US8431422B2 (en) | 2013-04-30 |
| KR20110025164A (ko) | 2011-03-09 |
| EP2294614A2 (de) | 2011-03-16 |
| US20110086447A1 (en) | 2011-04-14 |
| CN101983428A (zh) | 2011-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101983428B (zh) | 用于制造多个光电元件的方法 | |
| CN101681964B (zh) | 用于制造光电子器件的方法以及光电子器件 | |
| CN101681969B (zh) | 用于制造多个光电子器件的方法和光电子器件 | |
| JP7136834B2 (ja) | 小型光源を有する波長変換発光デバイス | |
| US8241932B1 (en) | Methods of fabricating light emitting diode packages | |
| JP6262745B2 (ja) | 発光ダイオードディスプレイの製造方法および発光ダイオードディスプレイ | |
| US20110136271A1 (en) | Method of Producing Semiconductor Components | |
| EP2917938B1 (en) | Wavelength converted light emitting device | |
| US8349628B2 (en) | Methods of fabricating light emitting diode devices | |
| CN105594002B (zh) | 光电子半导体器件和用于制造光电子半导体器件的方法 | |
| CN102593316B (zh) | 晶片级发光装置封装件及其制造方法 | |
| US20190148606A1 (en) | Method for Producing an Optoelectronic Component and Optoelectronic Component | |
| TW200539490A (en) | Optoelectronic semiconductor-chip and method to form a contact-structure for the electrical contact of an optoelectronic semiconductor-chip | |
| KR101291092B1 (ko) | 반도체 소자 구조물을 제조하는 방법 | |
| CN101971373B (zh) | 发射辐射的薄膜半导体芯片和用于制造发射辐射的薄膜半导体芯片的方法 | |
| US20150303179A1 (en) | Light Emitting Diode Assembly With Integrated Circuit Element | |
| KR102421288B1 (ko) | 광전자 반도체 부품을 제조하기 위한 방법, 및 광전자 반도체 부품 | |
| KR100823089B1 (ko) | 파장변환 물질층을 갖는 발광 다이오드 제조방법 | |
| US20220028926A1 (en) | Method for Producing a Radiation-Emitting Semiconductor Device and Radiation-Emitting Semiconductor Device | |
| US20210126155A1 (en) | Method for Producing a Component and Optoelectronic Component | |
| WO2016010378A1 (ko) | 웨이퍼 레벨 패키지 공정을 이용한 발광 소자 제조 방법 및 그것에 의해 제조된 발광 소자 | |
| KR20130114011A (ko) | 반도체 소자 구조물을 제조하는 방법 | |
| CN104704642A (zh) | 用于制造光电子器件的方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130612 |