JP5693450B2 - 複数のオプトエレクトロニクス素子の製造方法 - Google Patents

複数のオプトエレクトロニクス素子の製造方法 Download PDF

Info

Publication number
JP5693450B2
JP5693450B2 JP2011515089A JP2011515089A JP5693450B2 JP 5693450 B2 JP5693450 B2 JP 5693450B2 JP 2011515089 A JP2011515089 A JP 2011515089A JP 2011515089 A JP2011515089 A JP 2011515089A JP 5693450 B2 JP5693450 B2 JP 5693450B2
Authority
JP
Japan
Prior art keywords
semiconductor body
semiconductor
body support
optoelectronic
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011515089A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011526418A (ja
JP2011526418A5 (enExample
Inventor
ヘルマン ジークフリート
ヘルマン ジークフリート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2011526418A publication Critical patent/JP2011526418A/ja
Publication of JP2011526418A5 publication Critical patent/JP2011526418A5/ja
Application granted granted Critical
Publication of JP5693450B2 publication Critical patent/JP5693450B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2011515089A 2008-06-30 2009-06-18 複数のオプトエレクトロニクス素子の製造方法 Expired - Fee Related JP5693450B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008030815.3 2008-06-30
DE102008030815A DE102008030815A1 (de) 2008-06-30 2008-06-30 Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen
PCT/DE2009/000857 WO2010000224A2 (de) 2008-06-30 2009-06-18 Verfahren zur herstellung einer vielzahl von optoelektronischen bauelementen

Publications (3)

Publication Number Publication Date
JP2011526418A JP2011526418A (ja) 2011-10-06
JP2011526418A5 JP2011526418A5 (enExample) 2012-08-02
JP5693450B2 true JP5693450B2 (ja) 2015-04-01

Family

ID=41228784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011515089A Expired - Fee Related JP5693450B2 (ja) 2008-06-30 2009-06-18 複数のオプトエレクトロニクス素子の製造方法

Country Status (7)

Country Link
US (1) US8431422B2 (enExample)
EP (1) EP2294614B1 (enExample)
JP (1) JP5693450B2 (enExample)
KR (1) KR101587299B1 (enExample)
CN (1) CN101983428B (enExample)
DE (1) DE102008030815A1 (enExample)
WO (1) WO2010000224A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
DE102012217776A1 (de) 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013107862A1 (de) 2013-07-23 2015-01-29 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines oberflächenmontierbaren optoelektronischen Halbleiterbauteils
DE102014114188B4 (de) * 2014-09-30 2022-01-20 Osram Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102015103835A1 (de) * 2015-03-16 2016-09-22 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements
JP6217711B2 (ja) 2015-08-21 2017-10-25 日亜化学工業株式会社 発光装置の製造方法
TWI688121B (zh) 2018-08-24 2020-03-11 隆達電子股份有限公司 發光二極體結構
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
CN111883552B (zh) * 2020-08-04 2023-09-05 厦门乾照光电股份有限公司 一种集成式led芯片模组及其制作、测试、切割方法
CN118472152B (zh) * 2024-07-12 2024-09-17 诺视科技(浙江)有限公司 集成反射穹顶的微显示器件及其制备方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5104824A (en) * 1990-11-06 1992-04-14 Bell Communications Research, Inc. Selective area regrowth for surface-emitting lasers and other sharp features
JPH11177138A (ja) * 1997-12-11 1999-07-02 Stanley Electric Co Ltd 面実装型装置およびこれを用いた発光装置または受光装置
JP3829594B2 (ja) * 2000-06-30 2006-10-04 セイコーエプソン株式会社 素子実装方法と光伝送装置
US6432752B1 (en) * 2000-08-17 2002-08-13 Micron Technology, Inc. Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages
TW473951B (en) 2001-01-17 2002-01-21 Siliconware Precision Industries Co Ltd Non-leaded quad flat image sensor package
DE10128271C1 (de) * 2001-06-12 2002-11-28 Liz Electronics Corp Verfahren zur Herstellung von Dioden
DE10222609B4 (de) * 2002-04-15 2008-07-10 Schott Ag Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat
DE10235332A1 (de) * 2002-08-01 2004-02-19 Infineon Technologies Ag Mehrlagiger Schaltungsträger und Herstellung desselben
DE10245930A1 (de) * 2002-09-30 2004-04-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Bauelement-Modul
JP4603368B2 (ja) * 2003-02-28 2010-12-22 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 構造化された金属被覆を施されたパッケージボディを有するオプトエレクトロニクス素子、この種の素子を製作する方法、およびプラスチックを含むボディに、構造化された金属被覆を施す方法
JP2004304161A (ja) * 2003-03-14 2004-10-28 Sony Corp 発光素子、発光装置、画像表示装置、発光素子の製造方法及び画像表示装置の製造方法
US20070126016A1 (en) * 2005-05-12 2007-06-07 Epistar Corporation Light emitting device and manufacture method thereof
US7084496B2 (en) * 2004-01-14 2006-08-01 International Business Machines Corporation Method and apparatus for providing optoelectronic communication with an electronic device
AU2005232074A1 (en) * 2004-03-29 2005-10-20 LumaChip, Inc. Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
DE102004021233A1 (de) * 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
JP2006108204A (ja) * 2004-10-01 2006-04-20 Renesas Technology Corp 半導体モジュール及び電子装置
DE102006032047A1 (de) * 2006-07-10 2008-01-24 Schott Ag Verfahren zur Herstellung optoelektronischer Bauelemente und damit hergestellte Erzeugnisse
JP2008027999A (ja) * 2006-07-19 2008-02-07 Matsushita Electric Ind Co Ltd 発光装置の製造方法および発光装置
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102006051746A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer Lumineszenzkonversionsschicht
WO2008086090A1 (en) * 2007-01-05 2008-07-17 University Of Washington Self-assembled heterogeneous integrated optical analysis system
DE102007008524A1 (de) * 2007-02-21 2008-08-28 Osram Opto Semiconductors Gmbh Strahlung emittierender Chip mit mindestens einem Halbleiterkörper
DE102007030129A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
DE102007043877A1 (de) 2007-06-29 2009-01-08 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement
DE102008013030A1 (de) 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008014094A1 (de) 2008-03-13 2009-09-17 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung

Also Published As

Publication number Publication date
DE102008030815A1 (de) 2009-12-31
CN101983428B (zh) 2013-06-12
KR101587299B1 (ko) 2016-02-02
WO2010000224A2 (de) 2010-01-07
JP2011526418A (ja) 2011-10-06
EP2294614B1 (de) 2017-11-22
WO2010000224A3 (de) 2010-03-04
US8431422B2 (en) 2013-04-30
KR20110025164A (ko) 2011-03-09
EP2294614A2 (de) 2011-03-16
US20110086447A1 (en) 2011-04-14
CN101983428A (zh) 2011-03-02

Similar Documents

Publication Publication Date Title
JP5693450B2 (ja) 複数のオプトエレクトロニクス素子の製造方法
JP7136834B2 (ja) 小型光源を有する波長変換発光デバイス
CN101681964B (zh) 用于制造光电子器件的方法以及光电子器件
US10043955B2 (en) Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
KR101460392B1 (ko) 복수 개의 광전 소자들의 제조 방법 및 광전 소자
US7456035B2 (en) Flip chip light emitting diode devices having thinned or removed substrates
CN103222073B (zh) 发光二极管芯片、发光二极管封装结构、及用以形成上述的方法
TWI612693B (zh) 發光裝置及其製造方法
US7842547B2 (en) Laser lift-off of sapphire from a nitride flip-chip
US9324926B2 (en) Wavelength converted light emitting device
US9666771B2 (en) Method of forming a wavelength converted light emitting device
JP2016518033A (ja) 光学エレメントとリフレクタを用いた発光デバイス
KR100823089B1 (ko) 파장변환 물질층을 갖는 발광 다이오드 제조방법
KR20160010206A (ko) 웨이퍼 레벨 패키지 공정을 이용한 발광 소자 제조 방법 및 그것에 의해 제조된 발광 소자

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120618

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120618

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130918

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130924

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131203

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140324

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140407

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140626

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140703

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140925

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150126

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150203

R150 Certificate of patent or registration of utility model

Ref document number: 5693450

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees