KR101587299B1 - 복수의 광전 소자의 제조 방법 - Google Patents
복수의 광전 소자의 제조 방법 Download PDFInfo
- Publication number
- KR101587299B1 KR101587299B1 KR1020107020383A KR20107020383A KR101587299B1 KR 101587299 B1 KR101587299 B1 KR 101587299B1 KR 1020107020383 A KR1020107020383 A KR 1020107020383A KR 20107020383 A KR20107020383 A KR 20107020383A KR 101587299 B1 KR101587299 B1 KR 101587299B1
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- South Korea
- Prior art keywords
- semiconductor body
- semiconductor
- body carrier
- carrier
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008030815.3 | 2008-06-30 | ||
| DE102008030815A DE102008030815A1 (de) | 2008-06-30 | 2008-06-30 | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110025164A KR20110025164A (ko) | 2011-03-09 |
| KR101587299B1 true KR101587299B1 (ko) | 2016-02-02 |
Family
ID=41228784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107020383A Expired - Fee Related KR101587299B1 (ko) | 2008-06-30 | 2009-06-18 | 복수의 광전 소자의 제조 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8431422B2 (enExample) |
| EP (1) | EP2294614B1 (enExample) |
| JP (1) | JP5693450B2 (enExample) |
| KR (1) | KR101587299B1 (enExample) |
| CN (1) | CN101983428B (enExample) |
| DE (1) | DE102008030815A1 (enExample) |
| WO (1) | WO2010000224A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8816383B2 (en) * | 2012-07-06 | 2014-08-26 | Invensas Corporation | High performance light emitting diode with vias |
| DE102012217776A1 (de) | 2012-09-28 | 2014-06-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102013107862A1 (de) | 2013-07-23 | 2015-01-29 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines oberflächenmontierbaren optoelektronischen Halbleiterbauteils |
| DE102014114188B4 (de) * | 2014-09-30 | 2022-01-20 | Osram Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
| DE102015103835A1 (de) * | 2015-03-16 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements |
| JP6217711B2 (ja) | 2015-08-21 | 2017-10-25 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| TWI688121B (zh) | 2018-08-24 | 2020-03-11 | 隆達電子股份有限公司 | 發光二極體結構 |
| US11038088B2 (en) | 2019-10-14 | 2021-06-15 | Lextar Electronics Corporation | Light emitting diode package |
| CN111883552B (zh) * | 2020-08-04 | 2023-09-05 | 厦门乾照光电股份有限公司 | 一种集成式led芯片模组及其制作、测试、切割方法 |
| CN118472152B (zh) * | 2024-07-12 | 2024-09-17 | 诺视科技(浙江)有限公司 | 集成反射穹顶的微显示器件及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020055200A1 (en) * | 2000-06-30 | 2002-05-09 | Takayuki Kondo | Process of mounting elements and optical transmission apparatus |
| JP2008027999A (ja) * | 2006-07-19 | 2008-02-07 | Matsushita Electric Ind Co Ltd | 発光装置の製造方法および発光装置 |
| US20080079015A1 (en) * | 2006-09-29 | 2008-04-03 | Benjamin Claus Krummacher | Optoelectronic component having a luminescence conversion layer |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5104824A (en) * | 1990-11-06 | 1992-04-14 | Bell Communications Research, Inc. | Selective area regrowth for surface-emitting lasers and other sharp features |
| JPH11177138A (ja) * | 1997-12-11 | 1999-07-02 | Stanley Electric Co Ltd | 面実装型装置およびこれを用いた発光装置または受光装置 |
| US6432752B1 (en) * | 2000-08-17 | 2002-08-13 | Micron Technology, Inc. | Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages |
| TW473951B (en) | 2001-01-17 | 2002-01-21 | Siliconware Precision Industries Co Ltd | Non-leaded quad flat image sensor package |
| DE10128271C1 (de) * | 2001-06-12 | 2002-11-28 | Liz Electronics Corp | Verfahren zur Herstellung von Dioden |
| DE10222609B4 (de) * | 2002-04-15 | 2008-07-10 | Schott Ag | Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat |
| DE10235332A1 (de) * | 2002-08-01 | 2004-02-19 | Infineon Technologies Ag | Mehrlagiger Schaltungsträger und Herstellung desselben |
| DE10245930A1 (de) * | 2002-09-30 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Bauelement-Modul |
| JP4603368B2 (ja) * | 2003-02-28 | 2010-12-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 構造化された金属被覆を施されたパッケージボディを有するオプトエレクトロニクス素子、この種の素子を製作する方法、およびプラスチックを含むボディに、構造化された金属被覆を施す方法 |
| JP2004304161A (ja) * | 2003-03-14 | 2004-10-28 | Sony Corp | 発光素子、発光装置、画像表示装置、発光素子の製造方法及び画像表示装置の製造方法 |
| US20070126016A1 (en) * | 2005-05-12 | 2007-06-07 | Epistar Corporation | Light emitting device and manufacture method thereof |
| US7084496B2 (en) * | 2004-01-14 | 2006-08-01 | International Business Machines Corporation | Method and apparatus for providing optoelectronic communication with an electronic device |
| AU2005232074A1 (en) * | 2004-03-29 | 2005-10-20 | LumaChip, Inc. | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
| DE102004021233A1 (de) * | 2004-04-30 | 2005-12-01 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
| JP2006108204A (ja) * | 2004-10-01 | 2006-04-20 | Renesas Technology Corp | 半導体モジュール及び電子装置 |
| DE102006032047A1 (de) * | 2006-07-10 | 2008-01-24 | Schott Ag | Verfahren zur Herstellung optoelektronischer Bauelemente und damit hergestellte Erzeugnisse |
| DE102007004303A1 (de) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement und Bauelement-Verbund |
| WO2008086090A1 (en) * | 2007-01-05 | 2008-07-17 | University Of Washington | Self-assembled heterogeneous integrated optical analysis system |
| DE102007008524A1 (de) * | 2007-02-21 | 2008-08-28 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Chip mit mindestens einem Halbleiterkörper |
| DE102007030129A1 (de) * | 2007-06-29 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement |
| DE102007043877A1 (de) | 2007-06-29 | 2009-01-08 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement |
| DE102008013030A1 (de) | 2007-12-14 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
| DE102008014094A1 (de) | 2008-03-13 | 2009-09-17 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung |
-
2008
- 2008-06-30 DE DE102008030815A patent/DE102008030815A1/de not_active Withdrawn
-
2009
- 2009-06-18 CN CN2009801119833A patent/CN101983428B/zh not_active Expired - Fee Related
- 2009-06-18 JP JP2011515089A patent/JP5693450B2/ja not_active Expired - Fee Related
- 2009-06-18 EP EP09771994.2A patent/EP2294614B1/de not_active Not-in-force
- 2009-06-18 WO PCT/DE2009/000857 patent/WO2010000224A2/de not_active Ceased
- 2009-06-18 KR KR1020107020383A patent/KR101587299B1/ko not_active Expired - Fee Related
- 2009-06-18 US US12/922,397 patent/US8431422B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020055200A1 (en) * | 2000-06-30 | 2002-05-09 | Takayuki Kondo | Process of mounting elements and optical transmission apparatus |
| JP2008027999A (ja) * | 2006-07-19 | 2008-02-07 | Matsushita Electric Ind Co Ltd | 発光装置の製造方法および発光装置 |
| US20080079015A1 (en) * | 2006-09-29 | 2008-04-03 | Benjamin Claus Krummacher | Optoelectronic component having a luminescence conversion layer |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102008030815A1 (de) | 2009-12-31 |
| CN101983428B (zh) | 2013-06-12 |
| WO2010000224A2 (de) | 2010-01-07 |
| JP2011526418A (ja) | 2011-10-06 |
| EP2294614B1 (de) | 2017-11-22 |
| WO2010000224A3 (de) | 2010-03-04 |
| JP5693450B2 (ja) | 2015-04-01 |
| US8431422B2 (en) | 2013-04-30 |
| KR20110025164A (ko) | 2011-03-09 |
| EP2294614A2 (de) | 2011-03-16 |
| US20110086447A1 (en) | 2011-04-14 |
| CN101983428A (zh) | 2011-03-02 |
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