KR101587299B1 - 복수의 광전 소자의 제조 방법 - Google Patents

복수의 광전 소자의 제조 방법 Download PDF

Info

Publication number
KR101587299B1
KR101587299B1 KR1020107020383A KR20107020383A KR101587299B1 KR 101587299 B1 KR101587299 B1 KR 101587299B1 KR 1020107020383 A KR1020107020383 A KR 1020107020383A KR 20107020383 A KR20107020383 A KR 20107020383A KR 101587299 B1 KR101587299 B1 KR 101587299B1
Authority
KR
South Korea
Prior art keywords
semiconductor body
semiconductor
body carrier
carrier
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020107020383A
Other languages
English (en)
Korean (ko)
Other versions
KR20110025164A (ko
Inventor
시그프레이드 헤르만
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20110025164A publication Critical patent/KR20110025164A/ko
Application granted granted Critical
Publication of KR101587299B1 publication Critical patent/KR101587299B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020107020383A 2008-06-30 2009-06-18 복수의 광전 소자의 제조 방법 Expired - Fee Related KR101587299B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008030815.3 2008-06-30
DE102008030815A DE102008030815A1 (de) 2008-06-30 2008-06-30 Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen

Publications (2)

Publication Number Publication Date
KR20110025164A KR20110025164A (ko) 2011-03-09
KR101587299B1 true KR101587299B1 (ko) 2016-02-02

Family

ID=41228784

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107020383A Expired - Fee Related KR101587299B1 (ko) 2008-06-30 2009-06-18 복수의 광전 소자의 제조 방법

Country Status (7)

Country Link
US (1) US8431422B2 (enExample)
EP (1) EP2294614B1 (enExample)
JP (1) JP5693450B2 (enExample)
KR (1) KR101587299B1 (enExample)
CN (1) CN101983428B (enExample)
DE (1) DE102008030815A1 (enExample)
WO (1) WO2010000224A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
DE102012217776A1 (de) 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013107862A1 (de) 2013-07-23 2015-01-29 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines oberflächenmontierbaren optoelektronischen Halbleiterbauteils
DE102014114188B4 (de) * 2014-09-30 2022-01-20 Osram Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102015103835A1 (de) * 2015-03-16 2016-09-22 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements
JP6217711B2 (ja) 2015-08-21 2017-10-25 日亜化学工業株式会社 発光装置の製造方法
TWI688121B (zh) 2018-08-24 2020-03-11 隆達電子股份有限公司 發光二極體結構
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
CN111883552B (zh) * 2020-08-04 2023-09-05 厦门乾照光电股份有限公司 一种集成式led芯片模组及其制作、测试、切割方法
CN118472152B (zh) * 2024-07-12 2024-09-17 诺视科技(浙江)有限公司 集成反射穹顶的微显示器件及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020055200A1 (en) * 2000-06-30 2002-05-09 Takayuki Kondo Process of mounting elements and optical transmission apparatus
JP2008027999A (ja) * 2006-07-19 2008-02-07 Matsushita Electric Ind Co Ltd 発光装置の製造方法および発光装置
US20080079015A1 (en) * 2006-09-29 2008-04-03 Benjamin Claus Krummacher Optoelectronic component having a luminescence conversion layer

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5104824A (en) * 1990-11-06 1992-04-14 Bell Communications Research, Inc. Selective area regrowth for surface-emitting lasers and other sharp features
JPH11177138A (ja) * 1997-12-11 1999-07-02 Stanley Electric Co Ltd 面実装型装置およびこれを用いた発光装置または受光装置
US6432752B1 (en) * 2000-08-17 2002-08-13 Micron Technology, Inc. Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages
TW473951B (en) 2001-01-17 2002-01-21 Siliconware Precision Industries Co Ltd Non-leaded quad flat image sensor package
DE10128271C1 (de) * 2001-06-12 2002-11-28 Liz Electronics Corp Verfahren zur Herstellung von Dioden
DE10222609B4 (de) * 2002-04-15 2008-07-10 Schott Ag Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat
DE10235332A1 (de) * 2002-08-01 2004-02-19 Infineon Technologies Ag Mehrlagiger Schaltungsträger und Herstellung desselben
DE10245930A1 (de) * 2002-09-30 2004-04-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Bauelement-Modul
JP4603368B2 (ja) * 2003-02-28 2010-12-22 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 構造化された金属被覆を施されたパッケージボディを有するオプトエレクトロニクス素子、この種の素子を製作する方法、およびプラスチックを含むボディに、構造化された金属被覆を施す方法
JP2004304161A (ja) * 2003-03-14 2004-10-28 Sony Corp 発光素子、発光装置、画像表示装置、発光素子の製造方法及び画像表示装置の製造方法
US20070126016A1 (en) * 2005-05-12 2007-06-07 Epistar Corporation Light emitting device and manufacture method thereof
US7084496B2 (en) * 2004-01-14 2006-08-01 International Business Machines Corporation Method and apparatus for providing optoelectronic communication with an electronic device
AU2005232074A1 (en) * 2004-03-29 2005-10-20 LumaChip, Inc. Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
DE102004021233A1 (de) * 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
JP2006108204A (ja) * 2004-10-01 2006-04-20 Renesas Technology Corp 半導体モジュール及び電子装置
DE102006032047A1 (de) * 2006-07-10 2008-01-24 Schott Ag Verfahren zur Herstellung optoelektronischer Bauelemente und damit hergestellte Erzeugnisse
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
WO2008086090A1 (en) * 2007-01-05 2008-07-17 University Of Washington Self-assembled heterogeneous integrated optical analysis system
DE102007008524A1 (de) * 2007-02-21 2008-08-28 Osram Opto Semiconductors Gmbh Strahlung emittierender Chip mit mindestens einem Halbleiterkörper
DE102007030129A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
DE102007043877A1 (de) 2007-06-29 2009-01-08 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement
DE102008013030A1 (de) 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008014094A1 (de) 2008-03-13 2009-09-17 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020055200A1 (en) * 2000-06-30 2002-05-09 Takayuki Kondo Process of mounting elements and optical transmission apparatus
JP2008027999A (ja) * 2006-07-19 2008-02-07 Matsushita Electric Ind Co Ltd 発光装置の製造方法および発光装置
US20080079015A1 (en) * 2006-09-29 2008-04-03 Benjamin Claus Krummacher Optoelectronic component having a luminescence conversion layer

Also Published As

Publication number Publication date
DE102008030815A1 (de) 2009-12-31
CN101983428B (zh) 2013-06-12
WO2010000224A2 (de) 2010-01-07
JP2011526418A (ja) 2011-10-06
EP2294614B1 (de) 2017-11-22
WO2010000224A3 (de) 2010-03-04
JP5693450B2 (ja) 2015-04-01
US8431422B2 (en) 2013-04-30
KR20110025164A (ko) 2011-03-09
EP2294614A2 (de) 2011-03-16
US20110086447A1 (en) 2011-04-14
CN101983428A (zh) 2011-03-02

Similar Documents

Publication Publication Date Title
KR101587299B1 (ko) 복수의 광전 소자의 제조 방법
CN101681964B (zh) 用于制造光电子器件的方法以及光电子器件
KR101460392B1 (ko) 복수 개의 광전 소자들의 제조 방법 및 광전 소자
JP7136834B2 (ja) 小型光源を有する波長変換発光デバイス
CN103222073B (zh) 发光二极管芯片、发光二极管封装结构、及用以形成上述的方法
EP2388838B1 (en) Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
KR101193740B1 (ko) 발광 소자의 패키징을 위한 칩-규모 방법 및 칩 규모로 패키징된 발광 소자
US8329482B2 (en) White-emitting LED chips and method for making same
EP2917938B1 (en) Wavelength converted light emitting device
US8796665B2 (en) Solid state radiation transducers and methods of manufacturing
KR101548442B1 (ko) 캐리어 기판 및 반도체칩 제조 방법
TW200539490A (en) Optoelectronic semiconductor-chip and method to form a contact-structure for the electrical contact of an optoelectronic semiconductor-chip
KR20150069228A (ko) 파장변환층을 갖는 발광 다이오드 및 그것을 제조하는 방법
US20150303179A1 (en) Light Emitting Diode Assembly With Integrated Circuit Element
US20180198037A1 (en) Method for Producing Optoelectronic Conversion Semiconductor Chips and Composite of Conversion Semiconductor Chips
WO2014064541A2 (en) Light emitting diode package with enhanced heat conduction
KR100823089B1 (ko) 파장변환 물질층을 갖는 발광 다이오드 제조방법
KR20160147304A (ko) 발광소자 및 그 제조방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20200103

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220115

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220115