WO2009157378A1 - 無アルカリガラス基板のエッチング方法及び表示デバイス - Google Patents

無アルカリガラス基板のエッチング方法及び表示デバイス Download PDF

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Publication number
WO2009157378A1
WO2009157378A1 PCT/JP2009/061181 JP2009061181W WO2009157378A1 WO 2009157378 A1 WO2009157378 A1 WO 2009157378A1 JP 2009061181 W JP2009061181 W JP 2009061181W WO 2009157378 A1 WO2009157378 A1 WO 2009157378A1
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mass
etching
glass substrate
alkali
etching method
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PCT/JP2009/061181
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English (en)
French (fr)
Japanese (ja)
Inventor
佳孝 西條
祐一 鈴木
良司 秋山
敦義 竹中
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旭硝子株式会社
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Priority to CN200980124716XA priority Critical patent/CN102076625A/zh
Priority to KR1020107028804A priority patent/KR101430290B1/ko
Priority to JP2010517973A priority patent/JP5423674B2/ja
Publication of WO2009157378A1 publication Critical patent/WO2009157378A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching

Definitions

  • the present invention relates to a method for etching an alkali-free glass substrate. More specifically, the present invention relates to an etching method for thinning an alkali-free glass substrate used for a substrate of a display device such as a liquid crystal display device (LCD) or an organic EL display device (OELD).
  • a display device such as a liquid crystal display device (LCD) or an organic EL display device (OELD).
  • a method of reducing the plate thickness by etching the outer surface of each glass substrate after the bonding process between the array substrate and the color filter substrate is widely adopted. ing. For example, an original glass substrate having a thickness of 0.4 to 0.7 mm is etched to form a glass substrate having a thickness of 0.1 to 0.4 mm.
  • Non-Patent Document 1 targets silica glass (amorphous SiO 2 ) and quartz (crystalline SiO 2 ), and is different from the object (non-alkali glass) in the present invention.
  • Non-Patent Document 1 mainly relates to the examination of the dissolution rate of the sample in the etching solution (which is almost the same as the etching rate) and does not have the purpose of thinning the glass sheet.
  • Non-Patent Document 1 does not pay attention to the residue generated during etching.
  • a post-polishing step is performed after pre-polishing with a strong acid such as 10 to 30% by mass of HF and 20 to 50% by mass of H 2 SO 4 (Patent Document 4). See).
  • the method using the two steps of pre-polishing and post-polishing as described above makes contact with the glass only for a very short time in the pre-polishing step, so that it is impossible to etch the glass uniformly and deeply. Furthermore, it is necessary to go through many steps. From the above, productivity is generally poor, and it is necessary to renew the equipment, which is extremely disadvantageous in terms of cost.
  • Patent Document 6 Also known is a method of etching a multicomponent FPD glass substrate using an etchant mainly composed of hydrofluoric acid, ammonium fluoride and hydrochloric acid.
  • Etching solutions containing ammonium fluoride are well known as buffered hydrofluoric acid and have been routinely used in semiconductor manufacturing processes.
  • thinning of a glass substrate has been attempted for a long time, and as one of the methods, it has been known that chemical polishing, that is, etching the surface of a glass substrate with an etching solution having a predetermined composition condition (Patent Document). 7). It has also been known that a glass substrate is etched with an etching solution having a specific composition as a surface treatment before resist application in a manufacturing process of an LCD or the like (see Patent Document 8, Table 1).
  • Japanese Unexamined Patent Publication No. 2003-313049 Japanese Patent Laid-Open No. 2002-237030 Japanese Unexamined Patent Publication No. 2008-127585 Japanese Unexamined Patent Publication No. 2005-343742 Japanese Unexamined Patent Publication No. 2007-297228 Japanese Laid-Open Patent Publication No. 2003-63842 Japanese Unexamined Patent Publication No. 50-29620 Japanese Unexamined Patent Publication No. 52-144020
  • the present invention is an etching method for reducing the thickness of a non-alkali glass substrate in order to solve the above-described problems of the prior art, in which the etching solution is not suspended by unnecessary products, that is, the volume of the precipitate.
  • An object of the present invention is to provide an etching method that has a small ratio (hereinafter, referred to as volume precipitation rate), has a high etching rate, and can suppress the occurrence of haze on the surface of a glass substrate.
  • etching solution for etching a glass substrate.
  • etching amount is as large as 1 to 1000 ⁇ m and haze is likely to occur on the surface of the glass substrate, as in etching for reducing the thickness of an alkali-free glass substrate.
  • etching characteristics suitable for mass production of FPD are required.
  • Patent Document 1 describes that an etchant containing a mixed acid of hydrofluoric acid and another acid such as hydrochloric acid, sulfuric acid, phosphoric acid, or the like is used as an etchant.
  • an etchant containing a mixed acid of hydrofluoric acid and another acid such as hydrochloric acid, sulfuric acid, phosphoric acid, or the like is used as an etchant.
  • haze is generated on the glass substrate surface when the glass substrate surface is etched using an etchant containing hydrofluoric acid.
  • the etching solution needs to have a specific composition in order to suppress the generation of haze.
  • Patent Document 1 mainly discloses a method for regenerating an etching solution, it does not describe the surface properties of the glass after the etching process, and does not describe the etching rate during the etching process.
  • Patent Document 3 aims to improve the efficiency of etching by filtering the etching solution and circulating it through an etching tank.
  • the etching rate by the etching solution and the like.
  • changes in the volume precipitation rate depending on the composition of the etching solution there is no description of changes in the volume precipitation rate depending on the composition of the etching solution.
  • Patent Documents 4 and 5 it is necessary to go through a multi-step process, and although there is a description of the circulation of the etching solution, there is no description of measures against the precipitate generated during etching, and the occurrence of haze in the subsequent process There is no mention of countermeasures.
  • Patent Document 6 there is no disclosure about etching of an alkali-free glass substrate having a specific composition.
  • aspect 1 of the present invention is a method for etching the surface of an alkali-free glass substrate containing at least one metal selected from the group consisting of Ca, Sr, Ba and Mg, An etching method in which the surface of the alkali-free glass substrate is etched using an etchant in which HF and HCl satisfy the conditions of formula (A), formula (B), or formula (C) and do not contain NH 4 F. I will provide a.
  • HF 5% by mass to less than 20% by mass and HCl: 9% by mass or more
  • A HF: 20% by mass to less than 30% by mass and HCl: 5% by mass or more
  • B HF: 30% by mass or more and HCl: 2% by mass or more
  • C HF: 5% by mass to less than 20% by mass and HCl: 9% by mass or more
  • A HF: 20% by mass to less than 30% by mass and HCl: 5% by mass or more
  • B HF: 30% by mass or more and HCl: 2% by mass or more
  • C In the method as described above, an HF aqueous solution and an HCl aqueous solution are mixed and diluted with water as necessary. HF is arbitrarily miscible with water at a boiling point (19.54 ° C.) or lower, and an aqueous solution of about 45 to 100% by mass is sold and used as a reagent.
  • HF for atomic absorption concentration: 49.5 to 50.5% by
  • HCl is usually sold and used in the form of a saturated aqueous solution as a reagent, and its concentration is 35 to 37% by mass.
  • HCl for atomic absorption concentration: 35.5 to 36.5% by mass was used.
  • Aspect 2 provides the etching method according to aspect 1, wherein the alkali-free glass substrate is a color filter substrate provided with a transparent electrode and a color filter on one side of the glass substrate.
  • Aspect 3 provides the etching method according to aspect 1, wherein the alkali-free glass substrate is an active element substrate in which a transparent electrode and an active element are provided on one surface of the glass substrate.
  • Aspect 4 is the etching method according to aspects 1, 2, or 3, wherein the non-alkali glass substrate and another glass substrate are combined to face each other to form a display cell in which an internal circuit is sealed, and then etching is performed. provide.
  • Aspect 5 provides the etching method according to aspect 4, wherein the other glass substrate is also the alkali-free glass substrate.
  • Aspect 6 provides the etching method according to aspect 4, wherein the glass substrates on both sides of the display cell are the non-alkali glass substrates, respectively, and the outer surfaces thereof are etched simultaneously.
  • Aspect 7 provides the etching method according to Aspect 1, 2, 3, 4, 5 or 6 in which the alkali-free glass substrate satisfies the following composition (1) in terms of an oxide-based mass percentage.
  • SiO 2 50 to 66 mass%
  • Al 2 O 3 10.5 to 22 mass%
  • B 2 O 3 1 to 12 mass%
  • CaO 0 to 14.5 mass%
  • SrO 0 to 24% by mass
  • BaO 0 to 13.5% by mass
  • Aspect 8 provides the etching method according to Aspect 1, 2, 3, 4, 5 or 6 in which the alkali-free glass substrate satisfies the following composition (2) in terms of an oxide-based mass percentage.
  • SiO 2 58 to 66 mass%
  • Al 2 O 3 15 to 22 mass%
  • B 2 O 3 5 to 12 mass%
  • Aspect 9 provides the etching method according to Aspects 1, 2, 3, 4, 5 or 6 in which the alkali-free glass substrate satisfies the following composition (3) in terms of oxide-based mass percentage.
  • SiO 2 50 to 61.5 mass%
  • Al 2 O 3 10.5 to 18 mass%
  • B 2 O 3 7 to 10 mass%
  • CaO 0 to 14.5 %
  • SrO 0 to 24% by mass
  • BaO 0 to 13.5% by mass
  • Aspect 10 provides the etching method according to any one of aspects 1 to 9, wherein the etching is performed while maintaining the temperature of the etching solution at 20 to 60 ° C. When the temperature at the time of etching is high, the etching rate of the glass substrate can be increased.
  • etching when etching, bubbling into the etching solution in which the glass substrate is immersed, spraying of the etching solution onto the surface of the glass substrate, stirring of the etching solution in which the glass substrate is immersed, and immersion
  • etching solution may be injected either in the etching solution in which the glass substrate is immersed or in the air.
  • it is preferable to spray the glass substrate in the etching solution in which the glass substrate is immersed It is preferable because it can be easily etched and controlled uniformly.
  • Aspect 12 provides the etching method according to any one of Aspects 1 to 11, wherein the etching rate of the glass substrate is 1.3 ⁇ m / min or more.
  • Aspect 13 is the etching according to any one of Aspects 1 to 12, wherein the etching liquid for composition adjustment is replenished so as to keep the HF and HCl contents substantially constant while etching the alkali-free glass substrate. Provide a method.
  • Aspect 14 provides a display device including a glass substrate processed by the etching method of any one of Aspects 1 to 13. Examples of the display device include OLED and LCD.
  • the total content of the alkaline earth metal contained in the alkali-free glass substrate is at least 9% by mass or more in terms of oxide based mass percentage.
  • the effect of the etching solution of the present invention is more exhibited when the etching solution of the present invention is used for alkali-free glass having a total alkaline earth metal content of 14.5% by mass or more.
  • etching solution of the present invention for a non-alkali glass substrate containing Ca, Sr, Ba or Mg in a glass in an oxide-based mass percentage display of 15% by mass or more.
  • Sr is present on an alkali-free glass substrate containing 0% by mass or more, preferably 2% by mass or more, and more preferably 4% by mass or more in terms of mass percentage based on oxide. It is preferable to use the etching solution of the invention.
  • the present invention it is possible to reduce the volume precipitation rate of the precipitate generated by the reaction between the etching solution and the alkali-free glass substrate (35% by volume or less). Furthermore, the haze of the glass substrate surface can be reduced (haze value is 1 or less), and the surface of the glass substrate can be etched at a high etching rate (1.3 ⁇ m / min or more).
  • an etching process for thinning a glass substrate for example, an etching process for a glass substrate for thinning a display device.
  • it is suitable for etching processing of glass substrates for small and medium-sized LCDs and OLEDs typified by portable display devices such as mobiles, digital cameras and mobile phones.
  • the above-mentioned effect can be obtained only by exchanging the etching solution for the current equipment that is performing the etching operation for the purpose of reducing the thickness of the glass substrate, no new equipment investment is required. Furthermore, the etching process does not need to go through a multi-step process, and since the etching rate is high, it is considered that it is very useful for improving productivity. Further, if the condition of the above formula (A), (B) or (C) is satisfied, the etching rate is 1.3 ⁇ m / min or more, the haze value is 1 or less, and the volume precipitation rate is 35% by volume or less. Can be achieved.
  • FIG. 1 is an explanatory view showing an etching method of the present invention.
  • FIG. 2 is a schematic diagram showing a cross-sectional structure of the LCD.
  • the present invention aims to reduce the thickness of an alkali-free glass substrate, and the like, and etches the surface of the glass substrate in an etching amount of 1 to 1000 ⁇ m.
  • the present invention can be preferably used for etching on the one side of the surface of the glass substrate by an etching amount of 10 to 650 ⁇ m. Furthermore, it is suitable for performing an etching process with an etching amount of 150 to 600 ⁇ m.
  • the surface of the glass substrate is etched as a mixed acid by combining HF concentration and HCl concentration under a predetermined condition as an etchant.
  • the condition is that no ammonium fluoride is contained.
  • ammonium fluoride is contained, ammonium ions (NH 4 + ) and Al ions (Al 3+ ) are combined with F ⁇ in the etching solution to form Al—F ions, thereby generating unnecessary products and etching. This is because it shows an unstable tendency.
  • the method of contacting the etching solution with the non-alkali glass substrate, which is an object to be etched can be selected widely from known methods such as dipping, spraying, showering and the like. Therefore, there is no big barrier to using existing facilities, which is preferable.
  • the etching solution is stirred from the viewpoint of suppressing the generation of haze on the surface of the glass substrate and preventing the generation of precipitates in the etching solution.
  • the stirring action can be substituted by other methods having stirring ability such as bubbling and ultrasonic treatment.
  • the etching solution the HF concentration and the HCl concentration are set so as to satisfy the above formula (A), formula (B), or formula (C), thereby reducing the volume precipitation rate and generating haze.
  • the glass substrate surface has a high etching rate, preferably 1.3 ⁇ m / min or more, more preferably 2.5 ⁇ m / min or more, further preferably 5 ⁇ m / min or more, particularly preferably 10 ⁇ m / min or more, most Preferably, the etching can be performed at an etching rate of 15 ⁇ m / min or more.
  • the etching rate in the etching solution is less than 5% by mass, the etching rate is lowered, and the time for treating the glass substrate with the etching solution in order to achieve a desired etching amount is undesirably increased.
  • the time for treating the glass substrate with the etching solution in order to achieve a desired etching amount is undesirably increased.
  • productivity is deteriorated, which is not preferable. It is generally known that the etching rate is improved when the HF concentration is increased.
  • the HF concentration is preferably 10% by mass or more, more preferably 20% by mass or more, and most preferably 30% by mass or more.
  • the etching rate is improved, the generation of haze is suppressed, and the volume precipitation rate of the precipitate is further reduced.
  • HCl is not added, all of the above three points become worse.
  • the most preferable form of the etching solution of the present invention is to mix an HF aqueous solution (including anhydrous HF) of an arbitrary concentration and a saturated HCl aqueous solution so that a desired HF concentration is obtained. At that time, the higher the concentration of the HF aqueous solution, the more preferable.
  • HF and HCl are combined and used as a mixed acid as described above.
  • HCl is suitable for uniform etching of the surface of the glass substrate, and is considered to be superior in terms of solubility of unnecessary products as compared with other acidic substances.
  • Al ions (Al 3+ ) eluted from the glass substrate during the etching process combine with F ⁇ in the etching solution to generate AlF 6 3- ions, which are further metal ions (Ca 2+ , Mg 2+ , Sr 2+ , Ba 2+ ) and insoluble or poorly soluble salts (M 3 [AlF 6 ] 2 M is Ca 2+ , Mg 2+ , Sr 2+ or Ba 2 + ) Is considered to be the cause. Therefore, it is considered that containing a large amount of Ca, Mg, Sr, or Ba contributes to the generation of unnecessary products during the etching of the glass substrate.
  • insoluble or hardly soluble salts M 3 [AlF 6 ] 2
  • Sr 3 [AlF 6 ] 2 is difficult to settle and exists in a floating state in the etching solution. May be a problem.
  • AlF 6 3 ⁇ ions that cause this insoluble or hardly soluble salt (M 3 [AlF 6 ] 2 ) are likely to be generated under acidic conditions of pH 1-6.
  • An etching solution containing only HF has an acidic condition of pH 1 to 3, and AlF 6 3 ⁇ ions are likely to be generated.
  • the generation of insoluble or hardly soluble salt M 3 [AlF 6 ] 2
  • the precipitate in the etching solution increases.
  • etching method of the present invention a mixed acid of an etching solution having an HF concentration of 5% by mass or more and an HCl concentration of 2% by mass or more is used as an etching solution, so that the etching solution has a strong acid condition of pH 1 or less. Therefore, generation of AlF 6 3 ⁇ ions hardly occurs. As a result, the production of insoluble or hardly soluble salts (M 3 [AlF 6 ] 2 ) is reduced, and the amount of precipitates generated in the etching processing solution is greatly reduced.
  • the volume precipitation rate of an unnecessary product can be reduced by setting HF density
  • the principle / mechanism is not clear, but a large amount of F ⁇ ions and metal ions (Ca 2+ , Mg 2+ , Sr 2+ , Ba 2+ ) eluted from the glass substrate are directly bonded to form crystalline This is probably because a precipitate with a small volumetric precipitation rate was produced.
  • the composition of the alkali-free glass substrate to be etched is not particularly limited. While satisfying the conditions of alkali-free glass, it can be applied to alkali-free glass having a wide range of compositions. Among these, precipitation during etching treatment is performed on an alkali-free glass substrate containing Ca 2+ , Mg 2+ , Sr 2+ , and Ba 2+ in the glass composition, particularly an alkali-free glass substrate containing Sr 2+.
  • the etching solution of the present invention is preferable in that the amount of the material can be greatly reduced.
  • Al 3+ is a component usually contained in the glass composition.
  • the present invention is suitable for etching treatment of an alkali-free glass substrate having the following composition (1) in terms of oxide-based mass percentage.
  • alkali-free glass (100% by mass), SiO 2 : 50 to 66% by mass, Al 2 O 3 : 10.5 to 22% by mass, B 2 O 3 : 1 to 12% by mass, MgO: 0 to 8% by mass %, CaO: 0 to 14.5 mass%, SrO: 0 to 24 mass%, BaO: 0 to 13.5 mass%, MgO + CaO + SrO + BaO: 9 to 29.5 mass% (1).
  • alkali-free glass substrate having the following compositions (2) and (3) in terms of oxide-based mass percentage.
  • SiO 2 58 to 66% by mass
  • Al 2 O 3 15 to 22% by mass
  • B 2 O 3 5 to 12% by mass
  • CaO 0 to 9% by mass
  • SrO 0.5 to 12.5% by mass
  • BaO 0 to 2% by mass
  • Alkali-free glass 100% by mass
  • SiO 2 50 to 61.5% by mass
  • Al 2 O 3 10.5 to 18% by mass
  • B 2 O 3 7 to 10% by mass
  • CaO 0 to 14.5% by mass
  • SrO 0 to 24% by mass
  • BaO 0 to 13.5% by mass
  • the present invention relates to a glass substrate for a display device, in particular, a glass substrate for a small-to-medium-sized LCD represented by a portable display device such as a mobile, a digital camera or a mobile phone, a glass substrate for an OLED, and an LCD for a notebook PC It is suitable for performing an etching process for the purpose of thinning a glass substrate.
  • the present invention is not limited to these uses.
  • a glass substrate for large LCDs for monitors and televisions, a glass substrate for large OLEDs, and a glass substrate for PDPs are thin plates. It can be preferably used also for the etching treatment for the purpose of making it.
  • etching rate An etching solution having the composition shown in Table 2 below was filled in a thermostat kept at 25 ° C., and a 4 ⁇ 4 cm glass substrate was immersed using a jig. After etching for a predetermined time, the glass substrate was taken out, washed, and the mass of the glass substrate was measured. The etching amount was estimated from the difference in mass, area, and specific gravity of each glass substrate. This operation was repeated, the relationship of the etching amount with respect to the etching time was determined, and the slope of the approximate line was taken as the etching rate. Note that the etching solution was changed as appropriate.
  • volume precipitation rate (Volume sedimentation rate) To a polyethylene test tube, 0.25 g of glass obtained by pulverizing a glass substrate was added, and 10 ml of an etching solution shown in Table 4 below was added. After ultrasonic treatment for 10 minutes, the mixture was allowed to stand, and the volume precipitation rate obtained by dividing the precipitation amount after 24 hours by the etching solution amount was calculated.
  • the etching solution can be conducted at room temperature, but it can also be carried out preferably at 30 to 60 ° C.
  • the volume precipitation rate is preferably 35% by volume or less, more preferably 20% by volume or less, and particularly preferably 10% by volume or less.
  • volumetric precipitation rate means that the value is smaller than the numerical value to be compared in terms of measurement accuracy. It should be noted that the etching rate, haze value, and volumetric precipitation rate are difficult to adjust independently when performing etching and are parameters that are related to each other. Therefore, considering these three factors, either one or two Etching can also be performed under conditions that emphasize parameters.
  • the volume precipitation rate of unnecessary products decreased as the HF concentration and the HCl concentration in the etching solution increased.
  • the volume precipitation rate is preferably 35% by volume or less, more preferably 20% by volume or less, and most preferably 10% by volume or less from the viewpoint of the life of the etching solution.
  • etching is performed so as to satisfy the conditions of the above formula (A), formula (B), or formula (C).
  • an etching rate 1.3 ⁇ m / min or more, haze value is 1 or less, or volume precipitation rate is 35% by volume or less individually evaluated. It is also possible to perform etching by selecting one or two parameters and satisfying the reference value and selecting composition conditions of HF and HCl. This is because there is an allowable range depending on the glass composition of the glass substrate and the substrate size.
  • HF is a weak acid and is weakly ionized in an aqueous solution as follows.
  • HF ⁇ H + + F - When the etching solution is only HF, F consumed by etching and free F ⁇ become ions of SiF 6 2 ⁇ and AlF 6 3 ⁇ , and precipitates of CaF 2 , MgF 2 , SrF 2 , BaF 2 and the like. And no longer contributes to etching. Therefore, the etching rate is lowered.
  • HCl is a strong acid and is mostly ionized in the aqueous solution as follows.
  • HCl ⁇ H + + Cl - In the case where the etching solution is a mixed acid of HF and HCl, a sufficient amount of H + is present due to the ionization of HCl, so that the balance of HF ⁇ H + + F ⁇ is closer to the left side. That is, the amount of free F ⁇ is reduced. Furthermore, since Cl ⁇ acts as a counter ion for Ca 2+ , Mg 2+ , Sr 2+, and Ba 2+ , it is considered that precipitates such as CaF 2 , MgF 2 , SrF 2 , and BaF 2 are less likely to be generated. Due to the above effects, the amount of F that does not contribute to etching decreases, and the etching rate is unlikely to decrease. Therefore, it is suitable for process management. Therefore, in the present invention, it is essential to contain HCl.
  • FIG. 2 shows a schematic cross-sectional view of the liquid crystal cell 2.
  • the liquid crystal cell 12 includes a TFT array substrate 21 (active element substrate) each having an alkali-free glass substrate and a color filter (CF) substrate 20.
  • TFTs such as TN (Twisted Nematic), VA (Virtical Alignment), and IPS (In-Place-Switching).
  • the etching tank 14 is filled with the etching solution 11 having the above composition, the liquid crystal cell 12 as an object to be etched is supported on the support device 13, and immersed in the etching solution 11. Etching is performed while the etching solution is sufficiently stirred by the stirring device 15 so that unnecessary products do not adhere to the glass substrate surface. After a lapse of time according to the desired etching amount, the liquid crystal cell is pulled up, the whole is cleaned, and then necessary inspection is performed. In this way, an ultra-thin display device can be stably manufactured.
  • the etching tank is replenished with an etching solution for composition adjustment prepared in advance while monitoring the state of the etching solution so as to keep the HF and HCl contents substantially constant. It is preferable.
  • etching is based on immersion in an etching tank. At that time, it is preferable to perform bubbling and stirring in the etching solution being immersed. Alternatively, in order to prevent unnecessary products from adhering to the glass substrate surface, it is preferable to spray an etching solution onto the glass substrate surface. Alternatively, it is preferable to swing or rotate the glass substrate in an etching solution in which the glass substrate is immersed.
  • FIG. 2 schematically shows the state before and after thinning the both surfaces of the glass substrate by etching according to the present invention.
  • the detailed structure of the liquid crystal cell is omitted.
  • the periphery of the glass substrate is sealed with a sealant, and driving elements and color filters are formed inside the cell and filled with a liquid crystal substance.
  • the interior space of the liquid crystal cell is sealed and separated from the outside.
  • the mother glass substrate or a multi-substrate obtained by dividing a part of the mother glass substrate is also used when performing the etching method of the present invention. This is advantageous in terms of production process.
  • etching can be performed in units of one liquid crystal cell.
  • a protective member is provided so that the peripheral portion of the liquid crystal cell is not affected by the etching solution.
  • the glass surfaces after performing the etching according to the present invention are shown as etching end surfaces 30 and 31. If the same kind of non-alkali glass substrate is provided and etching is performed with the etching conditions in the etching tank being substantially uniform, the same etching amount can be obtained on the glass substrates on both sides.
  • the present invention it is possible to reduce the volume precipitation rate of the precipitate generated by the reaction between the etching solution and the alkali-free glass substrate (35% by volume or less). Furthermore, the haze of the glass substrate surface can be reduced (haze value is 1 or less), and the surface of the glass substrate can be etched at a high etching rate (1.3 ⁇ m / min or more). Therefore, it is suitable for the etching process aiming at thinning of a glass substrate, for example, the etching process of the glass substrate for thinning a display device. In particular, it is suitable for etching processing of glass substrates for small and medium-sized LCDs and OLEDs typified by portable display devices such as mobiles, digital cameras and mobile phones.
  • Etching device 11 Etching solution 12: Liquid crystal cell 13: Support device 14: Etching tank 15: Stirring device 20: CF substrate 21: TFT array substrate (active element substrate) 30: End surface of etching 31: End surface of etching
PCT/JP2009/061181 2008-06-25 2009-06-19 無アルカリガラス基板のエッチング方法及び表示デバイス WO2009157378A1 (ja)

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CN200980124716XA CN102076625A (zh) 2008-06-25 2009-06-19 无碱玻璃基板的蚀刻方法及显示装置
KR1020107028804A KR101430290B1 (ko) 2008-06-25 2009-06-19 무알칼리 유리 기판의 에칭 방법 및 표시 장치
JP2010517973A JP5423674B2 (ja) 2008-06-25 2009-06-19 無アルカリガラス基板のエッチング方法及び表示デバイス

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Cited By (11)

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JP2012138151A (ja) * 2010-12-27 2012-07-19 Asahi Glass Co Ltd 情報記録媒体用ガラス基板の製造方法
JP2013142048A (ja) * 2012-01-11 2013-07-22 Sharp Corp 無アルカリガラスを原料とするゼオライトの製造方法、ａ型ゼオライトおよびそれを用いた成形体、水浄化剤、土壌改質剤、保肥剤
JP2013155057A (ja) * 2012-01-26 2013-08-15 Sanwa Frost Industry Co Ltd Ｌｃｄガラス基板のエッチング方法およびその装置
KR101302681B1 (ko) * 2011-08-22 2013-09-03 삼성코닝정밀소재 주식회사 에칭 기판
WO2013181123A1 (en) * 2012-05-31 2013-12-05 Corning Incorporated Method for sludge control in wet acid etching
JP2014527190A (ja) * 2011-07-07 2014-10-09 コーニング インコーポレイテッド ガラス物品の強化のための表面傷の変形
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JPWO2013180220A1 (ja) * 2012-05-31 2016-01-21 旭硝子株式会社 無アルカリガラス基板、および、無アルカリガラス基板の薄板化方法
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JP2017200877A (ja) * 2011-07-07 2017-11-09 コーニング インコーポレイテッド ガラス物品の強化のための表面傷の変形
JP2014527190A (ja) * 2011-07-07 2014-10-09 コーニング インコーポレイテッド ガラス物品の強化のための表面傷の変形
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JP2013155057A (ja) * 2012-01-26 2013-08-15 Sanwa Frost Industry Co Ltd Ｌｃｄガラス基板のエッチング方法およびその装置
JP2015523306A (ja) * 2012-05-31 2015-08-13 コーニング インコーポレイテッド ウエット酸エッチングにおけるスラッジ制御のための方法
JPWO2013180220A1 (ja) * 2012-05-31 2016-01-21 旭硝子株式会社 無アルカリガラス基板、および、無アルカリガラス基板の薄板化方法
US9290410B2 (en) 2012-05-31 2016-03-22 Corning Incorporated Method for sludge control in wet acid etching
KR20150027133A (ko) * 2012-05-31 2015-03-11 코닝 인코포레이티드 습식 산 에칭시 슬러지 조절 방법
WO2013181123A1 (en) * 2012-05-31 2013-12-05 Corning Incorporated Method for sludge control in wet acid etching
KR101971316B1 (ko) 2012-05-31 2019-04-22 코닝 인코포레이티드 습식 산 에칭시 슬러지 조절 방법
WO2015080171A1 (ja) * 2013-11-28 2015-06-04 旭硝子株式会社 無アルカリガラス基板、および、無アルカリガラス基板の薄板化方法
JPWO2015080171A1 (ja) * 2013-11-28 2017-03-16 旭硝子株式会社 無アルカリガラス基板、および、無アルカリガラス基板の薄板化方法
US9488857B2 (en) 2014-01-10 2016-11-08 Corning Incorporated Method of strengthening an edge of a glass substrate
JP5910841B1 (ja) * 2015-03-25 2016-04-27 パナソニックＩｐマネジメント株式会社 ガラス用研磨装置の洗浄液および洗浄方法
WO2017132303A1 (en) * 2016-01-29 2017-08-03 Corning Incorporated Methods for thinning glass
US11001522B2 (en) 2016-01-29 2021-05-11 Corning Incorporated Methods for thinning glass

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