WO2016082384A1 - 蚀刻液 - Google Patents
蚀刻液 Download PDFInfo
- Publication number
- WO2016082384A1 WO2016082384A1 PCT/CN2015/074731 CN2015074731W WO2016082384A1 WO 2016082384 A1 WO2016082384 A1 WO 2016082384A1 CN 2015074731 W CN2015074731 W CN 2015074731W WO 2016082384 A1 WO2016082384 A1 WO 2016082384A1
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- WO
- WIPO (PCT)
- Prior art keywords
- weight
- etching solution
- acid
- etching
- anionic surfactant
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
Definitions
- the present invention relates to substrate thinning and etching of flat panel displays, and more particularly to an etching solution for thinning a substrate for a flat panel display.
- Flat panel displays include liquid crystal displays (LCDs), touch screens (TPs), plasma displays (PDPs), and organic electroluminescent devices (OLEDs).
- LCDs liquid crystal displays
- TPs touch screens
- PDPs plasma displays
- OLEDs organic electroluminescent devices
- the liquid crystal display device is most attracting attention in a flat panel display device because it provides a sharp image based on excellent resolution, consumes less power, and can produce a display screen in a thin manner.
- the liquid crystal display device is used in a mobile device including a mobile phone or a notebook PC, and a television.
- a glass substrate In the preparation process of a flat panel display, a glass substrate is required. Due to the limitation of the production process of the glass substrate, the produced glass substrate is thick. In order to further reduce the weight of the display device, manufacturers are increasingly adopting a method of thinning a glass substrate, and etching of the glass substrate becomes an important problem.
- thinning methods There are two kinds of thinning methods commonly used, one is physical method, that is, polishing polishing is performed using polishing powder. This method has long thinning time, poor precision control, and low product yield; the other method uses etching liquid.
- the chemical etching method has the advantages of short thinning time, small equipment investment, high product yield, simple composition and low cost of the thinning liquid, and gradually becomes the mainstream technical method for thinning the glass substrate.
- the etching solution of the prior art has a faster etching rate on the substrate, the etching amount is not easy to control, the thickness of the substrate cannot be well controlled, some can not effectively dissolve the silicate, and some can generate strong ionization and generate Excessive hydrofluoric acid causes the etching rate to be difficult to control, and sometimes the etching solution generates a large amount of bubbles, which lowers the etching rate.
- etching solution and a method of etching a glass substrate which dissolves precipitate impurities attached to the surface of the substrate after the substrate is thinned, can effectively remove impurities on the surface of the substrate, can improve product yield and yield, and can be The control of the thickness of the substrate provides an effective guarantee.
- An object of the present invention is to provide an etching solution and a method of etching a glass substrate, which can pass through a surface of a substrate
- the impurities are dissolved and etched to achieve the technical effect of removing impurities on the surface of the substrate, thereby effectively solving the problem that the substrate is reduced in yield due to particulate adhesion.
- the present invention provides an etchant, the etchant comprising:
- the weight percentages described therein are based on the weight of the etching solution.
- the present invention provides a method for etching a glass substrate, the method comprising:
- the etching liquid described above is brought into contact with the glass substrate.
- the etching solution provided by the present invention may include 10 to 30% by weight of phosphoric acid, 2 to 20% by weight of nitric acid, 6 to 18% by weight of hydrofluoric acid, 5 to 10% by weight of hydrochloric acid, and water, wherein the weight The percentage is based on the weight of the etchant.
- the F ion activity can be maintained by the three-step ionization effect of phosphoric acid
- the F ion is provided to have an overall thinning effect of the acid solution
- the silicate can be dissolved by using hydrochloric acid and the above-mentioned nitric acid to make the acid solution contain aqua regia.
- the etchant may comprise an anionic surfactant.
- the anionic surfactant may be at least one anion surface selected from the group consisting of sodium lauryl sulfate, sodium dodecylbenzene sulfonate, and sodium dioctyl succinate sulfonate. Active agent.
- the anionic surfactant may be at least one selected from the group consisting of sodium dodecylbenzenesulfonate and sodium lauryl sulfate.
- the anionic surfactant may be from 2 to 10% by weight based on the total mass of the etchant. Preferably, the anionic surfactant may be from 3 to 8% by weight based on the total mass of the etching solution.
- the etchant may include 10 to 20% by weight of nitric acid.
- the etchant consists of:
- the weight percentages described therein are based on the weight of the etching solution.
- the etching rate of the substrate is fast, the etching amount is not easily controlled, and the substrate thickness cannot be well controlled.
- the concentration of the anionic surfactant When the concentration of the anionic surfactant is less than 2% by weight, its effect cannot be exhibited. When the concentration of the anionic surfactant is greater than 10%, the etching solution generates a large amount of bubbles, thereby lowering the etching rate. Therefore, the concentration of the anionic surfactant needs to be between 2% and 10% by weight, more preferably between 3% and 8% by weight.
- the etching solution of the present invention can be used to etch a glass substrate.
- the etching liquid described above can be brought into contact with the glass substrate.
- the contacting may be to immerse the glass substrate in the etching solution, in the case where the substrate size is ⁇ 500 mm ⁇ 600 mm, the contact time is 300 seconds to 1500 seconds, and the contact temperature is 30 ° C to 38 ° C. In the case of a substrate size of >500 mm x 600 mm, the contact time is from 300 seconds to 1500 seconds, and the contact temperature is from 33 ° C to 42 ° C.
- the glass substrate may include a TFT glass substrate, and a liquid crystal display (LCD) (specifically including a twisted nematic (TN), a super twisted nematic (STN), and a color super twisted nematic (CSTN)), a touch screen (TP), Plasma substrates (PDP) and organic electroluminescence (OLED) display glass substrates, which are currently used in the LCD industry, can be applied to such etching liquids.
- LCD liquid crystal display
- TN twisted nematic
- STN super twisted nematic
- CSTN color super twisted nematic
- TP touch screen
- PDP Plasma substrates
- OLED organic electroluminescence
- the glass substrate etching liquid provided by the present invention is not a substrate thinning liquid in a complete sense, but an etching liquid used for surface treatment of a substrate when the thickness of the substrate is close to the target thickness of the thinning. It is possible to achieve the best controllable effect on the surface gloss of the substrate while ensuring that the thickness of the substrate is up to standard.
- the present invention provides an etching solution and a method of etching a glass substrate, which dissolves precipitate impurities attached to the surface of the substrate after the substrate is thinned, can effectively remove impurities on the surface of the substrate, and can improve product yield. And yield, at the same time can provide effective guarantee for the control of the thickness of the substrate.
- the etching liquid and the method for etching the glass substrate provided by the present invention can dissolve and etch impurities on the surface of the substrate to achieve the technical effect of removing impurities on the surface of the substrate, thereby effectively solving the problem that the substrate is reduced in yield due to particulate adhesion.
- Glass substrate a liquid crystal cell substrate having a width of 550 mm, a length of 650 mm, and a thickness of 1.0 mm, purchased from Corning
- Thinning target thickness 0.60mm
- Etching process The glass substrate was diluted in a hydrofluoric acid solution, and when the substrate etching thickness reached 0.65 mm, it was taken out from the hydrofluoric acid solution and charged into the etching liquid of the following examples or comparative examples.
- the evaluation is up to standard.
- the final thickness after thinning is greater than 0.62mm, which is difficult to control
- the uniformity is less than or equal to 5%, and the evaluation is better.
- the evaluation is general.
- 100 parts by weight of the etching solution 1 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate and water, which contains:
- the etching liquid 1 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- 100 parts by weight of the etching solution 2 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate and water, which contains:
- the etching liquid 2 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- 100 parts by weight of the etching solution 3 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate and water, which contains:
- the etching solution 3 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and evaluated. Uniformity, the results are shown in Table 1.
- 100 parts by weight of the etching solution 4 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate, sodium dodecylbenzenesulfonate and water, which contains:
- the etching liquid 4 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- 100 parts by weight of the etching solution 5 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate, sodium dodecylbenzenesulfonate and water, which contains:
- the etching liquid 5 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- the etching liquid 6 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- 100 parts by weight of the etching solution 7 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium dodecylbenzenesulfonate and water, which contains:
- the etching liquid 7 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- 100 parts by weight of the etching liquid 7 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, water, and contains:
- the etching liquid 8 of the present invention was used for the above etching process and its final thickness after thinning was evaluated, and evaluated. Uniformity, the results are shown in Table 1.
- a comparative etching solution 1 prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate and water, which contains:
- the comparative etching liquid 1 was used for the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- a comparative etching solution 2 prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid and water, which contains:
- the comparative etching liquid 2 was used for the above etching process and the final thickness after thinning was evaluated, and the uniformity thereof was evaluated, and the results are shown in Table 1.
- the etching liquid according to the present invention can maintain the uniformity of the thickness of the substrate as well as the thinning requirement.
- Examples 3 to 6 are preferred embodiments, both of which meet normal production requirements, and in particular, Examples 4 and 6 are preferred etchants.
- the addition or absence of an anionic surfactant and the addition limit conditions were determined by Comparative Example 1 and Comparative Example 2.
- the etchant of the present invention can effectively remove the silicate and other impurities adhering to the surface of the substrate caused by the thinning process of the normal substrate, thereby effectively improving the gloss of the surface of the substrate.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Liquid Crystal (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims (18)
- 一种蚀刻液,所述蚀刻液包括:10至30重量%的磷酸,2至20重量%的硝酸,6至18重量%的氢氟酸,5至10重量%的盐酸,和水,其中所述的重量百分比基于所述蚀刻液的重量。
- 根据权利要求1所述的蚀刻液,所述蚀刻液包括阴离子表面活性剂。
- 根据权利要求2所述的蚀刻液,其中所述阴离子表面活性剂是选自由十二烷基硫酸钠、十二烷基苯磺酸钠和二辛基琥珀酸磺酸钠中的至少一种阴离子表面活性剂。
- 根据权利要求3所述的蚀刻液,其中所述阴离子表面活性剂是选自十二烷基苯磺酸钠和十二烷基硫酸钠中的至少一种。
- 根据权利要求2所述的蚀刻液,其中所述的阴离子表面活性剂为所述蚀刻液总质量的2至10重量%。
- 根据权利要求2所述的蚀刻液,其中所述的阴离子表面活性剂为所述蚀刻液总质量的3至8重量%。
- 根据权利要求2所述的蚀刻液,其中所述蚀刻液包括10至20重量%的硝酸。
- 根据权利要求1所述的蚀刻液,所述的蚀刻液由以下各项组成:10至30重量%的磷酸,10至20重量%的硝酸,6至18重量%的氢氟酸,5至10重量%的盐酸,2至10重量%的阴离子表面活性剂,和余量的水,其中所述的重量百分比基于所述蚀刻液的重量。
- 一种用于蚀刻玻璃基板的方法,所述方法包括:使蚀刻液与玻璃基板接触,其中所述蚀刻液包括:10至30重量%的磷酸,2至20重量%的硝酸,6至18重量%的氢氟酸,5至10重量%的盐酸,和水,其中所述的重量百分比基于所述蚀刻液的重量。
- 根据权利要求9所述的方法,其中所述蚀刻液包括阴离子表面活性剂。
- 根据权利要求10所述的方法,其中所述阴离子表面活性剂是选自由十二烷基硫酸钠、十二烷基苯磺酸钠和二辛基琥珀酸磺酸钠中的至少一种阴离子表面活性剂。
- 根据权利要求11所述的方法,其中所述阴离子表面活性剂是选自十二烷基苯磺酸钠和十二烷基硫酸钠中的至少一种。
- 根据权利要求10所述的方法,其中所述阴离子表面活性剂为所述蚀刻液总质量的2至10重量%。
- 根据权利要求10所述的方法,其中所述阴离子表面活性剂为所述蚀刻液总质量的3至8重量%。
- 根据权利要求10所述的方法,其中所述蚀刻液包括10至20重量%的硝酸。
- 根据权利要求9所述的方法,其中所述蚀刻液由以下各项组成:10至30重量%的磷酸,10至20重量%的硝酸,6至18重量%的氢氟酸,5至10重量%的盐酸,2至10重量%的阴离子表面活性剂,和余量的水,其中所述的重量百分比基于所述蚀刻液的重量。
- 根据权利要求9所述的方法,其中所述接触为将所述玻璃基板浸渍在所述蚀刻液中,接触时间为300秒至1500秒,并且接触温度为30℃至38℃,并且基板尺寸≤500mm×600mm。
- 根据权利要求9所述的方法,其中所述接触为将所述玻璃基板浸渍在所述蚀刻液中,接触时间为300秒至1500秒,并且接触温度为33℃至42℃,并且基板尺寸>500mm×600mm。
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US14/769,097 US10030197B2 (en) | 2014-11-24 | 2015-03-20 | Etching solution |
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CN201410682417.0 | 2014-11-24 | ||
CN201410682417.0A CN104445971B (zh) | 2014-11-24 | 2014-11-24 | 蚀刻液 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105645776B (zh) * | 2015-12-29 | 2018-06-22 | 陈锋 | 一种环保的玻璃减薄工艺 |
JP6323695B2 (ja) * | 2016-09-30 | 2018-05-16 | パナソニックIpマネジメント株式会社 | ガラス用研磨液および研磨方法 |
CN107311461A (zh) * | 2017-05-19 | 2017-11-03 | 合肥市惠科精密模具有限公司 | 一种amoled显示屏用蚀刻液及其制备方法 |
CN107236958A (zh) * | 2017-06-21 | 2017-10-10 | 合肥市惠科精密模具有限公司 | 一种用于液晶显示屏玻璃基板的铜蚀刻液 |
CN107601912A (zh) * | 2017-09-19 | 2018-01-19 | 合肥惠科金扬科技有限公司 | 一种tft‑lcd显示屏基板玻璃高效蚀刻液 |
US11499236B2 (en) * | 2018-03-16 | 2022-11-15 | Versum Materials Us, Llc | Etching solution for tungsten word line recess |
CN112174540A (zh) * | 2020-10-09 | 2021-01-05 | 厦门天马微电子有限公司 | 玻璃基板的薄化方法及显示面板的制作方法 |
CN112680229A (zh) * | 2021-01-29 | 2021-04-20 | 深圳市百通达科技有限公司 | 一种湿电子化学的硅基材料蚀刻液及其制备方法 |
CN113058999B (zh) * | 2021-04-06 | 2022-05-10 | 中铼新材料有限公司 | 一种极薄铼箔的制造方法 |
CN116639883B (zh) * | 2023-05-30 | 2024-05-24 | 郑州恒昊光学科技有限公司 | 一种雾凇状冰花效果手机玻璃后壳的制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04349189A (ja) * | 1991-05-22 | 1992-12-03 | Fujitsu Ltd | 超伝導体膜のエッチング方法及びエッチング装置 |
CN101210340A (zh) * | 2006-12-30 | 2008-07-02 | 比亚迪股份有限公司 | 一种电化学蚀刻液及蚀刻方法 |
CN102643027A (zh) * | 2012-04-26 | 2012-08-22 | 深圳南玻显示器件科技有限公司 | 玻璃蚀刻液及玻璃的蚀刻方法 |
CN103508676A (zh) * | 2013-07-24 | 2014-01-15 | 芜湖长信科技股份有限公司 | 一种避免液晶基板玻璃减薄工艺缺陷的方法及其酸液配置方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2890944A (en) * | 1956-05-25 | 1959-06-16 | North American Aviation Inc | Continuous chemical milling process |
US5869403A (en) * | 1997-03-14 | 1999-02-09 | Micron Technology, Inc. | Semiconductor processing methods of forming a contact opening to a semiconductor substrate |
EP1357092A1 (en) * | 2000-12-27 | 2003-10-29 | Hiroshi Miwa | Method for preparing decorative glass using glass etching composition |
CN1944307A (zh) * | 2005-10-09 | 2007-04-11 | 李纯殥 | 玻璃表面常温抛光翻新工艺 |
KR20080022917A (ko) * | 2006-09-08 | 2008-03-12 | 삼성전자주식회사 | 식각액 공급장치, 식각장치 및 식각방법 |
JP2009073711A (ja) * | 2007-09-25 | 2009-04-09 | Hitachi Displays Ltd | ガラス基板用化学研磨液及びそれを用いた液晶表示装置の製造方法 |
CN101215099B (zh) * | 2008-01-16 | 2011-02-02 | 京东方科技集团股份有限公司 | 平板玻璃基板减薄蚀刻液 |
EP3521253A1 (en) * | 2013-12-19 | 2019-08-07 | Corning Incorporated | Textured surfaces for display applications |
-
2014
- 2014-11-24 CN CN201410682417.0A patent/CN104445971B/zh active Active
-
2015
- 2015-03-20 WO PCT/CN2015/074731 patent/WO2016082384A1/zh active Application Filing
- 2015-03-20 US US14/769,097 patent/US10030197B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04349189A (ja) * | 1991-05-22 | 1992-12-03 | Fujitsu Ltd | 超伝導体膜のエッチング方法及びエッチング装置 |
CN101210340A (zh) * | 2006-12-30 | 2008-07-02 | 比亚迪股份有限公司 | 一种电化学蚀刻液及蚀刻方法 |
CN102643027A (zh) * | 2012-04-26 | 2012-08-22 | 深圳南玻显示器件科技有限公司 | 玻璃蚀刻液及玻璃的蚀刻方法 |
CN103508676A (zh) * | 2013-07-24 | 2014-01-15 | 芜湖长信科技股份有限公司 | 一种避免液晶基板玻璃减薄工艺缺陷的方法及其酸液配置方法 |
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CN104445971B (zh) | 2017-02-01 |
CN104445971A (zh) | 2015-03-25 |
US10030197B2 (en) | 2018-07-24 |
US20160340581A1 (en) | 2016-11-24 |
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