WO2016082384A1 - 蚀刻液 - Google Patents
蚀刻液 Download PDFInfo
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- WO2016082384A1 WO2016082384A1 PCT/CN2015/074731 CN2015074731W WO2016082384A1 WO 2016082384 A1 WO2016082384 A1 WO 2016082384A1 CN 2015074731 W CN2015074731 W CN 2015074731W WO 2016082384 A1 WO2016082384 A1 WO 2016082384A1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
Definitions
- the present invention relates to substrate thinning and etching of flat panel displays, and more particularly to an etching solution for thinning a substrate for a flat panel display.
- Flat panel displays include liquid crystal displays (LCDs), touch screens (TPs), plasma displays (PDPs), and organic electroluminescent devices (OLEDs).
- LCDs liquid crystal displays
- TPs touch screens
- PDPs plasma displays
- OLEDs organic electroluminescent devices
- the liquid crystal display device is most attracting attention in a flat panel display device because it provides a sharp image based on excellent resolution, consumes less power, and can produce a display screen in a thin manner.
- the liquid crystal display device is used in a mobile device including a mobile phone or a notebook PC, and a television.
- a glass substrate In the preparation process of a flat panel display, a glass substrate is required. Due to the limitation of the production process of the glass substrate, the produced glass substrate is thick. In order to further reduce the weight of the display device, manufacturers are increasingly adopting a method of thinning a glass substrate, and etching of the glass substrate becomes an important problem.
- thinning methods There are two kinds of thinning methods commonly used, one is physical method, that is, polishing polishing is performed using polishing powder. This method has long thinning time, poor precision control, and low product yield; the other method uses etching liquid.
- the chemical etching method has the advantages of short thinning time, small equipment investment, high product yield, simple composition and low cost of the thinning liquid, and gradually becomes the mainstream technical method for thinning the glass substrate.
- the etching solution of the prior art has a faster etching rate on the substrate, the etching amount is not easy to control, the thickness of the substrate cannot be well controlled, some can not effectively dissolve the silicate, and some can generate strong ionization and generate Excessive hydrofluoric acid causes the etching rate to be difficult to control, and sometimes the etching solution generates a large amount of bubbles, which lowers the etching rate.
- etching solution and a method of etching a glass substrate which dissolves precipitate impurities attached to the surface of the substrate after the substrate is thinned, can effectively remove impurities on the surface of the substrate, can improve product yield and yield, and can be The control of the thickness of the substrate provides an effective guarantee.
- An object of the present invention is to provide an etching solution and a method of etching a glass substrate, which can pass through a surface of a substrate
- the impurities are dissolved and etched to achieve the technical effect of removing impurities on the surface of the substrate, thereby effectively solving the problem that the substrate is reduced in yield due to particulate adhesion.
- the present invention provides an etchant, the etchant comprising:
- the weight percentages described therein are based on the weight of the etching solution.
- the present invention provides a method for etching a glass substrate, the method comprising:
- the etching liquid described above is brought into contact with the glass substrate.
- the etching solution provided by the present invention may include 10 to 30% by weight of phosphoric acid, 2 to 20% by weight of nitric acid, 6 to 18% by weight of hydrofluoric acid, 5 to 10% by weight of hydrochloric acid, and water, wherein the weight The percentage is based on the weight of the etchant.
- the F ion activity can be maintained by the three-step ionization effect of phosphoric acid
- the F ion is provided to have an overall thinning effect of the acid solution
- the silicate can be dissolved by using hydrochloric acid and the above-mentioned nitric acid to make the acid solution contain aqua regia.
- the etchant may comprise an anionic surfactant.
- the anionic surfactant may be at least one anion surface selected from the group consisting of sodium lauryl sulfate, sodium dodecylbenzene sulfonate, and sodium dioctyl succinate sulfonate. Active agent.
- the anionic surfactant may be at least one selected from the group consisting of sodium dodecylbenzenesulfonate and sodium lauryl sulfate.
- the anionic surfactant may be from 2 to 10% by weight based on the total mass of the etchant. Preferably, the anionic surfactant may be from 3 to 8% by weight based on the total mass of the etching solution.
- the etchant may include 10 to 20% by weight of nitric acid.
- the etchant consists of:
- the weight percentages described therein are based on the weight of the etching solution.
- the etching rate of the substrate is fast, the etching amount is not easily controlled, and the substrate thickness cannot be well controlled.
- the concentration of the anionic surfactant When the concentration of the anionic surfactant is less than 2% by weight, its effect cannot be exhibited. When the concentration of the anionic surfactant is greater than 10%, the etching solution generates a large amount of bubbles, thereby lowering the etching rate. Therefore, the concentration of the anionic surfactant needs to be between 2% and 10% by weight, more preferably between 3% and 8% by weight.
- the etching solution of the present invention can be used to etch a glass substrate.
- the etching liquid described above can be brought into contact with the glass substrate.
- the contacting may be to immerse the glass substrate in the etching solution, in the case where the substrate size is ⁇ 500 mm ⁇ 600 mm, the contact time is 300 seconds to 1500 seconds, and the contact temperature is 30 ° C to 38 ° C. In the case of a substrate size of >500 mm x 600 mm, the contact time is from 300 seconds to 1500 seconds, and the contact temperature is from 33 ° C to 42 ° C.
- the glass substrate may include a TFT glass substrate, and a liquid crystal display (LCD) (specifically including a twisted nematic (TN), a super twisted nematic (STN), and a color super twisted nematic (CSTN)), a touch screen (TP), Plasma substrates (PDP) and organic electroluminescence (OLED) display glass substrates, which are currently used in the LCD industry, can be applied to such etching liquids.
- LCD liquid crystal display
- TN twisted nematic
- STN super twisted nematic
- CSTN color super twisted nematic
- TP touch screen
- PDP Plasma substrates
- OLED organic electroluminescence
- the glass substrate etching liquid provided by the present invention is not a substrate thinning liquid in a complete sense, but an etching liquid used for surface treatment of a substrate when the thickness of the substrate is close to the target thickness of the thinning. It is possible to achieve the best controllable effect on the surface gloss of the substrate while ensuring that the thickness of the substrate is up to standard.
- the present invention provides an etching solution and a method of etching a glass substrate, which dissolves precipitate impurities attached to the surface of the substrate after the substrate is thinned, can effectively remove impurities on the surface of the substrate, and can improve product yield. And yield, at the same time can provide effective guarantee for the control of the thickness of the substrate.
- the etching liquid and the method for etching the glass substrate provided by the present invention can dissolve and etch impurities on the surface of the substrate to achieve the technical effect of removing impurities on the surface of the substrate, thereby effectively solving the problem that the substrate is reduced in yield due to particulate adhesion.
- Glass substrate a liquid crystal cell substrate having a width of 550 mm, a length of 650 mm, and a thickness of 1.0 mm, purchased from Corning
- Thinning target thickness 0.60mm
- Etching process The glass substrate was diluted in a hydrofluoric acid solution, and when the substrate etching thickness reached 0.65 mm, it was taken out from the hydrofluoric acid solution and charged into the etching liquid of the following examples or comparative examples.
- the evaluation is up to standard.
- the final thickness after thinning is greater than 0.62mm, which is difficult to control
- the uniformity is less than or equal to 5%, and the evaluation is better.
- the evaluation is general.
- 100 parts by weight of the etching solution 1 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate and water, which contains:
- the etching liquid 1 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- 100 parts by weight of the etching solution 2 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate and water, which contains:
- the etching liquid 2 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- 100 parts by weight of the etching solution 3 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate and water, which contains:
- the etching solution 3 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and evaluated. Uniformity, the results are shown in Table 1.
- 100 parts by weight of the etching solution 4 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate, sodium dodecylbenzenesulfonate and water, which contains:
- the etching liquid 4 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- 100 parts by weight of the etching solution 5 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate, sodium dodecylbenzenesulfonate and water, which contains:
- the etching liquid 5 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- the etching liquid 6 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- 100 parts by weight of the etching solution 7 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium dodecylbenzenesulfonate and water, which contains:
- the etching liquid 7 of the present invention was used in the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- 100 parts by weight of the etching liquid 7 of the present invention is prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, water, and contains:
- the etching liquid 8 of the present invention was used for the above etching process and its final thickness after thinning was evaluated, and evaluated. Uniformity, the results are shown in Table 1.
- a comparative etching solution 1 prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, sodium lauryl sulfate and water, which contains:
- the comparative etching liquid 1 was used for the above etching process and its final thickness after thinning was evaluated, and its uniformity was evaluated, and the results are shown in Table 1.
- a comparative etching solution 2 prepared from phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid and water, which contains:
- the comparative etching liquid 2 was used for the above etching process and the final thickness after thinning was evaluated, and the uniformity thereof was evaluated, and the results are shown in Table 1.
- the etching liquid according to the present invention can maintain the uniformity of the thickness of the substrate as well as the thinning requirement.
- Examples 3 to 6 are preferred embodiments, both of which meet normal production requirements, and in particular, Examples 4 and 6 are preferred etchants.
- the addition or absence of an anionic surfactant and the addition limit conditions were determined by Comparative Example 1 and Comparative Example 2.
- the etchant of the present invention can effectively remove the silicate and other impurities adhering to the surface of the substrate caused by the thinning process of the normal substrate, thereby effectively improving the gloss of the surface of the substrate.
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Abstract
一种蚀刻液，包括：10至30重量％的磷酸，2至20重量％的硝酸，6至18重量％的氢氟酸，5至10重量％的盐酸，和水，其中所述的重量百分比基于所述蚀刻液的重量。所述蚀刻液可用于减薄量产过程中的基板，其在基板薄化之后对附着在基板表面的沉淀杂质进行溶解，有效去除基板表面杂质，提高产品合格率和良率，同时对基板厚度的控制提供了有效保证。
Description
本发明涉及平板显示器的基板薄化及蚀刻，特别是涉及用于平板显示器的基板薄化过程中的蚀刻液。
平板显示器包括液晶显示器(LCD)、触摸屏(TP)、等离子体显示器(PDP)及有机电致发光器(OLED)。液晶显示装置由于提供基于卓越的分辨率的鲜明的影像、耗电少、可较薄地制作显示画面的特性，在平板显示装置中最受到关注。液晶显示装置使用于包括手机、笔记本型PC的移动用设备及电视。
在平板显示器的制备工艺过程中，需要使用玻璃基板。由于玻璃基板生产工艺的限制，生产出的玻璃基板较厚。为了进一步减轻显示器件的重量，生产厂家越来越多的采用将玻璃基板进行减薄的方法，随之玻璃基板的蚀刻成为重要的问题。
通常使用的减薄方法有两种，一种是物理方法，即使用抛光粉进行抛光研磨，这种方法减薄时间长，精度不好控制，产品良率低；另一种方法为使用蚀刻液的化学蚀刻法，这种方法减薄时间短，设备投入小，产品良率高，且减薄液的成分简单成本低，逐渐成为了玻璃基板减薄的主流技术方法。
现有技术的蚀刻液对基板的蚀刻速率较快，蚀刻量不容易控制，不能很好的对基板厚度进行控制，有的无法有效溶解硅酸盐，有的会产生较强的电离作用，生成过多的氢氟酸，会导致蚀刻速率不易控制，有时蚀刻液会产生大量气泡，降低蚀刻速率。
因此，需要提供一种蚀刻液及蚀刻玻璃基板的方法，其在基板薄化之后对附着在基板表面的沉淀杂质进行溶解，能有效去除基板表面杂质，可以提高产品合格率和良率，同时可以对基板厚度的控制提供有效保证。
发明内容
本发明的一个目的是提供蚀刻液及蚀刻玻璃基板的方法，其可以通过对基板表面
的杂质进行溶解和蚀刻，达到去除基板表面杂质的技术效果，从而有效解决基板由于颗粒状附着而降低良率的问题。
因此，在一个方面，本发明提供一种蚀刻液，所述蚀刻液包括：
10至30重量％的磷酸，
2至20重量％的硝酸，
6至18重量％的氢氟酸，
5至10重量％的盐酸，和
水，
其中所述的重量百分比基于所述蚀刻液的重量。
在另一个方面，本发明提供一种用于蚀刻玻璃基板的方法，所述方法包括：
使上面所述的蚀刻液与玻璃基板接触。
本发明提供的蚀刻液可以包括10至30重量％的磷酸，2至20重量％的硝酸，6至18重量％的氢氟酸，5至10重量％的盐酸，和水，其中所述的重量百分比基于所述蚀刻液的重量。
通过使用磷酸，可以利用磷酸的三步电离效应保持F离子活性；
通过使用硝酸，提供硝酸根离子使硅酸盐保持溶解状态；
通过使用氢氟酸，提供F离子使酸溶液整体具有减薄效果；并且
通过使用盐酸，配合以上述的硝酸，使酸液含有王水性质，可以溶解硅酸盐。
在一个优选的实施方案中，所述蚀刻液可以包括阴离子表面活性剂。
在一个更优选的实施方案中，所述阴离子表面活性剂可以是选自由十二烷基硫酸钠、十二烷基苯磺酸钠和二辛基琥珀酸磺酸钠中的至少一种阴离子表面活性剂。
在一个再更优选的实施方案中，所述阴离子表面活性剂可以是选自十二烷基苯磺酸钠和十二烷基硫酸钠中的至少一种。
在一个更优选的实施方案中，所述的阴离子表面活性剂可以为所述蚀刻液总质量的2至10重量％。优选地，所述的阴离子表面活性剂可以为所述蚀刻液总质量的3至8重量％。
在一个优选的实施方案中，所述蚀刻液可以包括10至20重量％的硝酸。
在另一个优选的实施方案中，所述的蚀刻液由以下各项组成：
10至30重量％的磷酸，
10至20重量％的硝酸，
6至18重量％的氢氟酸，
5至10重量％的盐酸，
2至10重量％的阴离子表面活性剂，和
余量的水，
其中所述的重量百分比基于所述蚀刻液的重量。
氢氟酸含量超过18重量％时，基板的蚀刻速率较快，蚀刻量不容易控制，不能很好的对基板厚度进行控制。
硝酸的含量小于2重量％时，无法有效溶解硅酸盐。
磷酸浓度高于30重量％时，会产生较强的电离作用，生成过多的氢氟酸，会导致蚀刻速率不易控制。
当阴离子表面活性剂的浓度小于2重量％时，其作用无法体现。当阴离子表面活性剂的浓度在大于10％时，蚀刻液会产生大量气泡，从而降低蚀刻速率。所以，阴离子表面活性剂的浓度需要在2重量％至10重量％之间，更优选地在3重量％至8重量％之间。
本发明的蚀刻液可以用于蚀刻玻璃基板。可以使上面所述的蚀刻液与玻璃基板接触。所述接触可以为将所述玻璃基板浸渍在所述蚀刻液中，在基板尺寸≤500mm×600mm的情况下，接触时间为300秒至1500秒，并且接触温度为30℃至38℃。在基板尺寸＞500mm×600mm的情况下，接触时间为300秒至1500秒，并且接触温度为33℃至42℃。
玻璃基板可以包括TFT玻璃基板，以及液晶显示(LCD)(具体包括扭曲向列型(TN)、超扭曲向列型(STN)和彩色超扭曲向列型(CSTN))、触摸屏(TP)、等离子体(PDP)及有机电致发光(OLED)显示用玻璃基板，目前应用在LCD行业中的玻璃基板均可应用与此种刻蚀液中。
本发明提供的玻璃基板蚀刻液不是完全意义上的基板减薄用液，而是在基板厚度接近减薄目标厚度时，对基板表面处理使用的蚀刻液。能够在确保基板厚度达标的前提下，使基板的表面光泽程度达到可控的最佳效果。
因此，本发明提供了一种蚀刻液及蚀刻玻璃基板的方法，其在基板薄化之后对附着在基板表面的沉淀杂质进行溶解，能有效去除基板表面杂质，可以提高产品合格率
和良率，同时可以对基板厚度的控制提供有效保证。本发明提供的蚀刻液及蚀刻玻璃基板的方法，可以通过对基板表面的杂质进行溶解和蚀刻，达到去除基板表面杂质的技术效果，从而有效解决基板由于颗粒状附着而降低良率的问题。
实施例：
在以下实施例中，如果没有具体表明，所述的份以及比例都按重量计。
玻璃基板：宽度为550mm、长度为650mm，厚度为1.0mm的液晶盒基板，购自康宁
减薄目标厚度：0.60mm
蚀刻温度：35±3℃
蚀刻时间：600秒
蚀刻过程：将玻璃基板氢氟酸溶液中减薄，在基板蚀刻厚度达到0.65mm时，将其从氢氟酸溶液中取出并且投入下列实施例或对比例的蚀刻液中。
均一性评价：在玻璃基板的表面上均匀地取30个点，测量其厚度(Ti，i＝1至30)及平均值(Ta)，均一性通过如下得到的：由每个点的厚度Ti与平均值Ta，得到比值，计算该比值在减去1之后的绝对值，由10个绝对值之和除以10生乘以100，得到以百分数表示基板厚度的均一性。
减薄后的最终厚度为0.60±0.02mm时，评价为达标
减薄后的最终厚度大于0.62mm，评价为难以控制
减薄后的最终厚度小于0.58mm时，评价为蚀刻速度快且难以控制
均一性为小于或等于5％，评价为较好
均一性为大于5％且小于或等于8％时，评价为一般
均一性为大于8％时，评价为差
实施例1：
由磷酸、硝酸、氢氟酸、盐酸、十二烷基硫酸钠和水配制100重量份的本发明蚀刻液1，其含有：
30重量份的磷酸，
20重量份的硝酸，
10重量份的氢氟酸，
5重量份的盐酸，
10重量份的十二烷基硫酸钠，和
余量的水。
将本发明蚀刻液1用于上述蚀刻过程并且评价其减薄后的最终厚度，并且评价其均一性，结果见表1。
实施例2：
由磷酸、硝酸、氢氟酸、盐酸、十二烷基硫酸钠和水配制100重量份的本发明蚀刻液2，其含有：
25重量份的磷酸，
15重量份的硝酸，
8重量份的氢氟酸，
8重量份的盐酸，
8重量份的十二烷基硫酸钠，和
余量的水。
将本发明蚀刻液2用于上述蚀刻过程并且评价其减薄后的最终厚度，并且评价其均一性，结果见表1。
实施例3：
由磷酸、硝酸、氢氟酸、盐酸、十二烷基硫酸钠和水配制100重量份的本发明蚀刻液3，其含有：
20重量份的磷酸，
12重量份的硝酸，
8重量份的氢氟酸，
8重量份的盐酸，
5重量份的十二烷基硫酸钠，和
余量的水。
将本发明蚀刻液3用于上述蚀刻过程并且评价其减薄后的最终厚度，并且评价其
均一性，结果见表1。
实施例4：
由磷酸、硝酸、氢氟酸、盐酸、十二烷基硫酸钠、十二烷基苯磺酸钠和水配制100重量份的本发明蚀刻液4，其含有：
20重量份的磷酸，
12重量份的硝酸，
8重量份的氢氟酸，
8重量份的盐酸，
3重量份的十二烷基硫酸钠，
3重量份的十二烷基苯磺酸钠，和
余量的水。
将本发明蚀刻液4用于上述蚀刻过程并且评价其减薄后的最终厚度，并且评价其均一性，结果见表1。
实施例5：
由磷酸、硝酸、氢氟酸、盐酸、十二烷基硫酸钠、十二烷基苯磺酸钠和水配制100重量份的本发明蚀刻液5，其含有：
20重量份的磷酸，
12重量份的硝酸，
10重量份的氢氟酸，
8重量份的盐酸，
3重量份的十二烷基硫酸钠，
3重量份的十二烷基苯磺酸钠，和
余量的水。
将本发明蚀刻液5用于上述蚀刻过程并且评价其减薄后的最终厚度，并且评价其均一性，结果见表1。
实施例6：
由磷酸、硝酸、氢氟酸、盐酸、十二烷基苯磺酸钠和水配制100重量份的本发明
蚀刻液6，其含有：
20重量份的磷酸，
12重量份的硝酸，
8重量份的氢氟酸，
8重量份的盐酸，
7重量份的十二烷基苯磺酸钠，和
余量的水。
将本发明蚀刻液6用于上述蚀刻过程并且评价其减薄后的最终厚度，并且评价其均一性，结果见表1。
实施例7：
由磷酸、硝酸、氢氟酸、盐酸、十二烷基苯磺酸钠和水配制100重量份的本发明蚀刻液7，其含有：
20重量份的磷酸，
12重量份的硝酸，
8重量份的氢氟酸，
8重量份的盐酸，
5重量份的十二烷基苯磺酸钠，和
余量的水。
将本发明蚀刻液7用于上述蚀刻过程并且评价其减薄后的最终厚度，并且评价其均一性，结果见表1。
实施例8：
由磷酸、硝酸、氢氟酸、盐酸、水配制100重量份的本发明蚀刻液7，其含有：
20重量份的磷酸，
12重量份的硝酸，
8重量份的氢氟酸，
8重量份的盐酸，和
余量的水。
将本发明蚀刻液8用于上述蚀刻过程并且评价其减薄后的最终厚度，并且评价其
均一性，结果见表1
对比例1：
由磷酸、硝酸、氢氟酸、盐酸、十二烷基硫酸钠和水配制100重量份的对比蚀刻液1，其含有：
30重量份的磷酸，
20重量份的硝酸，
20重量份的氢氟酸，
8重量份的盐酸，
8重量份的十二烷基硫酸钠，和
余量的水。
将对比蚀刻液1用于上述蚀刻过程并且评价其减薄后的最终厚度，并且评价其均一性，结果见表1。
对比例2：
由磷酸、硝酸、氢氟酸、盐酸和水配制100重量份的对比蚀刻液2，其含有：
10重量份的磷酸，
10重量份的硝酸，
5重量份的氢氟酸，
5重量份的盐酸，和
余量的水。
将对比蚀刻液2用于上述蚀刻过程并且评价其减薄后的最终厚度，并且评价其均一性，结果见表1。
表1
通过表1可以看出，根据本发明的蚀刻液，可以保持基板厚度的均一以及减薄要求。实施例3至6是优选的实施方案，均可满足正常的生产要求，尤其以实施例4和实施例6为优选的蚀刻液。通过对比例1和对比例2来确定阴离子表面活性剂的添加与否及添加极限条件。
通过观察蚀刻后的玻璃基板，采用本发明的刻蚀液可以有效地去除在正常基板薄化工序所产生的附着在基板表面的硅酸盐及其他杂质，有效改善基板表面的光泽程度。
Claims (18)
- 一种蚀刻液，所述蚀刻液包括：10至30重量％的磷酸，2至20重量％的硝酸，6至18重量％的氢氟酸，5至10重量％的盐酸，和水，其中所述的重量百分比基于所述蚀刻液的重量。
- 根据权利要求1所述的蚀刻液，所述蚀刻液包括阴离子表面活性剂。
- 根据权利要求2所述的蚀刻液，其中所述阴离子表面活性剂是选自由十二烷基硫酸钠、十二烷基苯磺酸钠和二辛基琥珀酸磺酸钠中的至少一种阴离子表面活性剂。
- 根据权利要求3所述的蚀刻液，其中所述阴离子表面活性剂是选自十二烷基苯磺酸钠和十二烷基硫酸钠中的至少一种。
- 根据权利要求2所述的蚀刻液，其中所述的阴离子表面活性剂为所述蚀刻液总质量的2至10重量％。
- 根据权利要求2所述的蚀刻液，其中所述的阴离子表面活性剂为所述蚀刻液总质量的3至8重量％。
- 根据权利要求2所述的蚀刻液，其中所述蚀刻液包括10至20重量％的硝酸。
- 根据权利要求1所述的蚀刻液，所述的蚀刻液由以下各项组成：10至30重量％的磷酸，10至20重量％的硝酸，6至18重量％的氢氟酸，5至10重量％的盐酸，2至10重量％的阴离子表面活性剂，和余量的水，其中所述的重量百分比基于所述蚀刻液的重量。
- 一种用于蚀刻玻璃基板的方法，所述方法包括：使蚀刻液与玻璃基板接触，其中所述蚀刻液包括：10至30重量％的磷酸，2至20重量％的硝酸，6至18重量％的氢氟酸，5至10重量％的盐酸，和水，其中所述的重量百分比基于所述蚀刻液的重量。
- 根据权利要求9所述的方法，其中所述蚀刻液包括阴离子表面活性剂。
- 根据权利要求10所述的方法，其中所述阴离子表面活性剂是选自由十二烷基硫酸钠、十二烷基苯磺酸钠和二辛基琥珀酸磺酸钠中的至少一种阴离子表面活性剂。
- 根据权利要求11所述的方法，其中所述阴离子表面活性剂是选自十二烷基苯磺酸钠和十二烷基硫酸钠中的至少一种。
- 根据权利要求10所述的方法，其中所述阴离子表面活性剂为所述蚀刻液总质量的2至10重量％。
- 根据权利要求10所述的方法，其中所述阴离子表面活性剂为所述蚀刻液总质量的3至8重量％。
- 根据权利要求10所述的方法，其中所述蚀刻液包括10至20重量％的硝酸。
- 根据权利要求9所述的方法，其中所述蚀刻液由以下各项组成：10至30重量％的磷酸，10至20重量％的硝酸，6至18重量％的氢氟酸，5至10重量％的盐酸，2至10重量％的阴离子表面活性剂，和余量的水，其中所述的重量百分比基于所述蚀刻液的重量。
- 根据权利要求9所述的方法，其中所述接触为将所述玻璃基板浸渍在所述蚀刻液中，接触时间为300秒至1500秒，并且接触温度为30℃至38℃，并且基板尺寸≤500mm×600mm。
- 根据权利要求9所述的方法，其中所述接触为将所述玻璃基板浸渍在所述蚀刻液中，接触时间为300秒至1500秒，并且接触温度为33℃至42℃，并且基板尺寸＞500mm×600mm。
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| JP6323695B2 (ja) * | 2016-09-30 | 2018-05-16 | パナソニックＩｐマネジメント株式会社 | ガラス用研磨液および研磨方法 |
| CN107311461A (zh) * | 2017-05-19 | 2017-11-03 | 合肥市惠科精密模具有限公司 | 一种amoled显示屏用蚀刻液及其制备方法 |
| CN107236958A (zh) * | 2017-06-21 | 2017-10-10 | 合肥市惠科精密模具有限公司 | 一种用于液晶显示屏玻璃基板的铜蚀刻液 |
| CN107601912A (zh) * | 2017-09-19 | 2018-01-19 | 合肥惠科金扬科技有限公司 | 一种tft‑lcd显示屏基板玻璃高效蚀刻液 |
| US11499236B2 (en) * | 2018-03-16 | 2022-11-15 | Versum Materials Us, Llc | Etching solution for tungsten word line recess |
| CN112174540A (zh) * | 2020-10-09 | 2021-01-05 | 厦门天马微电子有限公司 | 玻璃基板的薄化方法及显示面板的制作方法 |
| CN112680229A (zh) * | 2021-01-29 | 2021-04-20 | 深圳市百通达科技有限公司 | 一种湿电子化学的硅基材料蚀刻液及其制备方法 |
| CN113058999B (zh) * | 2021-04-06 | 2022-05-10 | 中铼新材料有限公司 | 一种极薄铼箔的制造方法 |
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