WO2009096728A2 - 포토 마스크의 수리장치 및 이를 이용한 수리방법 - Google Patents
포토 마스크의 수리장치 및 이를 이용한 수리방법 Download PDFInfo
- Publication number
- WO2009096728A2 WO2009096728A2 PCT/KR2009/000451 KR2009000451W WO2009096728A2 WO 2009096728 A2 WO2009096728 A2 WO 2009096728A2 KR 2009000451 W KR2009000451 W KR 2009000451W WO 2009096728 A2 WO2009096728 A2 WO 2009096728A2
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- WO
- WIPO (PCT)
- Prior art keywords
- repair
- probe
- photo mask
- microscope
- atomic
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Definitions
- the present invention relates to a repair apparatus for a photo mask using an atomic force microscope probe and a repair method using the same.
- Integrated circuits are created through circuit design, wafer fabrication, testing and packaging.
- a layout is created, which is a combination of patterns that must be formed on a silicon wafer.
- the patterns are made using a photolithography process and a photo mask (reticle).
- the photo mask has a structure in which a chrome pattern is coated on a transparent quartz substrate.
- defects present in the fabricated photo mask may be a factor that reduces the yield of the integrated circuit process.
- the defects may include contamination, chromium spots, holes, residues, poor adhesion, indentation, or scratches. These may occur in the design of the photo mask, in the process of making the photo mask and in subsequent processes.
- FIB focused ion beam
- FAM atomic force microscope
- This method has the advantage of better spatial resolution and less work time than laser, but can cause substrate damage such as sputtering or gallium ion implantation.
- the focused electron beam (FEB) method uses a SEM light source, which is slower than FIB, but has better spatial resolution and better chemical selectivity, thereby reducing damage to the photomask.
- the present invention relates to an apparatus capable of accurately repairing a photomask having a reduced line width using an atomic force microscope probe, and / or a repair method using the same.
- An embodiment of the present invention provides a photo mask repair apparatus.
- the apparatus includes a repair atomic microscope probe for repairing a defective portion of the photo mask; An electron microscope for observing the repair process of the photomask by the repair atomic microscope probe, wherein the repair atomic microscope probe is located at a defective portion of the photomask; And an atomic force microscope probe for imaging the shape of the photo mask after repair in-situ.
- a replacement probe replacement part capable of loading the other probe may be added.
- An embodiment of the present invention provides a photo mask repair method.
- the method allows the repair atomic microscope probe to be positioned at a defective portion of the photo mask; Removing the defective portion of the photo mask by reciprocating the repair atomic microscope probe; Observing the repair process of the photomask by the repair atomic microscope probe with an electron microscope; Imaging the shape of the photomask after repair in-situ using an atomic force microscope probe different from the repair atomic force microscope probe. Before removing the defective portion of the photo mask, imaging of the defective portion of the photo mask using the repair atomic microscope probe or the imaging atomic microscope probe may be added.
- the atomic force microscope may obtain a distorted image due to the interaction between the probe and the pattern, and thus the actual pattern may be identified by comparing the atomic force microscope image with the electron microscope image.
- a more realistic image can be obtained instead of a distorted image by the repair atomic microscope probe damaged during the defect repair process.
- FIG. 1 is a conceptual diagram of a photo mask repair apparatus according to embodiments of the present invention.
- FIGS. 2 and 3 show a photo mask repair apparatus according to embodiments of the present invention.
- FIG. 4 shows a photo mask repair apparatus according to a variant of the invention.
- FIG. 5 is a flow chart illustrating a photo mask repair method according to embodiments of the present invention.
- FIG. 6 is an image of a shape before and after repairing a photo mask according to embodiments of the present invention.
- FIG. 1 is a conceptual diagram of a photo mask repair apparatus according to embodiments of the present invention
- FIGS. 2 and 3 illustrate a photo mask repair apparatus according to embodiments of the present invention.
- the photo mask repair apparatus is a loading table 103 for loading the photo mask 101 for repair and on the loading table 103 It may include a repair department.
- the photo mask 101, the loading table 103, and the repair unit may be disposed in the vacuum chamber 107.
- the loading table 103 may be an XY stage capable of translation in the X and Y axis directions.
- the loading table 103 may be fixed to the vacuum chamber 107 through the rotating stage 105.
- the rotating stage 105 may be rotatable through a rotating shaft (not shown) fixed to the vacuum chamber 107. Therefore, the photo mask 101 loaded on the loading table 103 may be capable of the X-axis direction, the Y-axis direction, and the rotational movement.
- the repair unit is provided on the loading table 103, the repair atomic microscope 112, imaging atomic microscope 114, replacement atomic microscope probe loading unit 115, electron microscope 116, optical microscope ( 117, the ion beam device 119, and a controller (not shown) for controlling them.
- the repair atomic microscope 112, the imaging atomic microscope 114, and the replacement probe loading unit 115 may be fixed to the rotation stage 105 on the loading table 103. That is, the photo mask 101 may be loaded between the atomic force microscopes and the loading table 103.
- the repair atomic microscope 112 is for repairing a defective portion of the photo mask 101.
- the repair probe 112a and the probe driving unit for fixing the repair probe and transporting them in the X-axis and Y-axis directions.
- the probe driver 112b may allow the repair probe 112a to be accurately positioned at a defective portion of the photo mask.
- the repair probe 112a may be reciprocated and / or scanned by a well known method of driving an atomic force microscope. That is, the driving unit (not shown) may reciprocate the repair probe 112a such that the repair probe 112a removes a defective portion of the photo mask 101.
- the atomic microscope 114 for imaging is provided separately from the atomic microscope 112 for repair in order to confirm the shape of the photo mask 101 after repair in-situ.
- a probe 114a, a probe driver 114b for fixing the imaging probe and transferring it in the X and Y axis directions, and a driver (not shown) for driving a reciprocating motion of the imaging probe 114a. can do. Since the repair probe 112a may be worn due to interaction with the pattern of the photo mask 101, the image obtained by using the repair probe 112a may be distorted from the original shape. Therefore, the shape of the photomask pattern after repair using the imaging probe 114a provided separately from the repair probe 112a can be accurately imaged.
- the imaging probe 114a may be reciprocated and / or scanned according to a well-known method of driving an atomic force microscope.
- the repair probe 112a and the imaging probe 114a may be disposed on the loading table 103 in a direction inclined to the surface of the photo mask 101 toward the photo mask 101. .
- the replacement probe loading unit 115 may load the other probe (not shown), and replace the repairing probe 112a with the other probe according to a command of the controller (not shown). .
- the electron microscope Compared with the conventional optical microscope, the electron microscope has a spatial resolution of 200 times or more, the depth of focus is 1000 times longer, and the magnification can be freely converted. In addition, wider and deeper areas can be observed at higher speeds than atomic microscopes.
- the electron microscope 116 may find a defective portion of the photo mask 101, and may quickly guide the repair probe 112a to be positioned at the defective portion of the photo mask 101. That is, while the user visually observes the photo mask and / or the atomic microscope with an electron microscope, the defective portion of the photo mask may be found and the repair probe may be quickly located at the defective portion.
- the electron microscope 116 can observe the repair process of the photomask 101 by the repair atomic microscope 112, it is possible to check the wear state of the repair probe (112a).
- the optical microscope 119 can observe the approach of the probes to the photo mask 101. In addition, the optical microscope can roughly find a defective portion of the photo mask identified by the defect detector.
- the ion beam apparatus 119 is for assisting the repair of the photo mask 101 by the repair atomic microscope 112.
- the electron microscope 116, the optical microscope 117, and the ion beam device 119 may be fixed to the vacuum chamber 107.
- the incident angle of the electron gun of the electron microscope 116 may be adjusted.
- the incident angle may be adjusted by driving the electron gun incident angle controller, that is, the rotation stage 105.
- the angle of incidence of the electron gun of the electron microscope By adjusting the angle of incidence of the electron gun of the electron microscope, the defective portion of the photo mask 101 may not be covered by the optical microscope, the atomic microscope, and the ion beam devices. Accordingly, the repair process of the photo mask can be observed in real time.
- the control unit (not shown) displays an image of the imaging atomic microscope 114, the electron microscope 116, and the optical microscope 117, the repair atomic microscope 112, and the replacement probe loading unit. 115 and the driving of the ion beam device 119 can be controlled.
- the photo mask repair apparatus includes a micro electron microscope 120 and a micro electron microscope 120 for monitoring a wear state of the repair probe 112a.
- the apparatus may further include a micro electron microscope sliding stage 121 for approaching the repair probe 112a.
- the angle of the repair probe (112a) with respect to the micro electron microscope 120 may be adjusted.
- the adjustment of the angle may be made by driving the rotary stage 105.
- the repair probe 112a may not be covered by the optical microscope, the atomic force microscope, and the ion beam devices.
- the photo mask 101 Before driving the rotating stage 105, the photo mask 101 may be transferred by driving the loading table 103. Accordingly, the rotation of the rotation stage can be free.
- the defect position reported by the defect detector is roughly found using the electron microscope 116 or the optical microscope 117. Electron microscopes have a higher spatial resolution than ordinary optical microscopes, and wider and deeper areas can be observed at a higher speed than atomic microscopes, so that defect positions of the photomask can be found at high speed. That is, high speed mask navigation may be possible. By imaging the defect portion of the photo mask with the repairing probe or the imaging probe around the detected position, it is possible to more accurately determine the position of the defect (S11).
- the repair probe 112a is positioned at the defective portion of the photomask 101 by referring to the search result of the electron microscope 116 or the optical microscope 117 (S12).
- a repair operation is performed by removing a defective portion of the photo mask 101 (S13).
- the repair process of the photomask by the repair probe 112a can be quickly observed in real time using an electron microscope.
- the repair process of the photo mask cannot be imaged in real time, the repair work has to be paused and imaged using a repair probe to determine the optimal work end point.
- the repair process is observed by the electron microscope 116 at the same time as the work of the repair probe 112a, it is possible to more effectively obtain the optimum end point.
- the electron microscope 116 can be used to observe the wear and / or contamination of the repair probe 112a. If the wear condition is not good, the repair work may be stopped and the repair probe 112a may be replaced by another probe of the replacement probe loading unit 115. In the past, it was very difficult not only to detach the probe and the photo mask during operation in order to check the wear state of the repair probe, but also to make the photo mask and the probe in the original position after removal. On the other hand, according to the embodiment of the present invention, since the replacement of the repairing probe can be performed without changing the position of the photo mask, there is no difficulty in rearranging the photo mask.
- the shape of the photomask after repair is confirmed in-situ (S14).
- a repair probe was used to image the shape of the photo mask after repair.
- the repair probe has a problem that it is easily worn or contaminated during the repair process, and the reproducibility of imaging is poor. Therefore, it was very difficult to remove the probe and the photo mask during the operation to check the condition of the probe, and to remove the probe and return to the original position of the photo mask.
- the imaging using a separate probe that is not worn or contaminated in the repair process it is possible to image a more accurate shape.
- FIGS. 6C and 6D are respectively a top view and a perspective view before photo mask repair, and (b) and (d) are the top view and a perspective view after photo mask repair, respectively.
- the removal of the defect D by the repair probe 112a is shown by the imaging probe 114a as a three-dimensional image as shown in FIGS. 6C and 6D.
- Embodiments of the present invention can be used for defect repair of a photo mask.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (7)
- 포토 마스크의 결함 부분을 수리하기 위한 수리용 원자현미경;상기 수리용 원자현미경이 상기 포토 마스크의 결함 부분에 위치하도록 가이드하고, 상기 수리용 원자현미경에 의한 상기 포토 마스크의 수리 과정을 관찰하기 위한 전자 현미경; 및수리 후의 상기 포토 마스크의 형상을 인-시츄(in-situ)로 이미징하기 위한 이미징용 원자현미경을 포함하는 포토 마스크 수리장치.
- 청구항 1에 있어서,상기 전자 현미경의 전자총의 입사각을 조절하기 위한 전자총 입사각 조절부를 더 포함하는 포토 마스크 수리장치.
- 청구항 1에 있어서,상기 수리용 원자현미경의 탐침의 마모에 따라, 상기 수리용 원자현미경의 탐침을 다른 탐침으로 교체하기 위하여, 상기 다른 탐침을 로딩할 수 있는 교체용 탐침 로딩부를 더 포함하는 포토 마스크 수리장치.
- 청구항 1에 있어서,상기 수리용 원자현미경의 탐침의 상기 포토 마스크로의 접근을 관찰하기 위한 광학 현미경을 더 포함하는 포토 마스크 수리장치.
- 청구항 1에 있어서,상기 수리용 원자현미경의 탐침에 의한 상기 포토 마스크의 수리을 보조하기 위한 이온 빔 장치를 더 포함하는 포토 마스크 수리장치.
- 수리용 원자현미경 탐침이 포토 마스크의 결함 부분에 위치하도록 하고;상기 수리용 원자현미경 탐침을 왕복 동작시키는 것에 의하여, 상기 포토 마스크의 결함 부분을 제거하고;상기 수리용 원자현미경 탐침에 의한 상기 포토 마스크의 수리 과정을 전자현미경으로 관찰하고; 그리고상기 수리용 원자현미경 탐침과는 다른 이미징용 원자현미경 탐침을 사용하여, 수리 후의 상기 포토 마스크의 형상을 인-시츄(in-situ)로 이미징하는 것을 포함하는 포토 마스크 수리방법.
- 청구항 6에 있어서,상기 포토 마스크의 결함 부분을 제거하기 전에, 상기 수리용 원자현미경 탐침 또는 상기 이미징용 원자현미경 탐침을 사용하여, 상기 포토 마스크의 결함 부분을 이미징하는 것을 더 포함하는 포토 마스크 수리방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801033029A CN101925977B (zh) | 2008-01-30 | 2009-01-30 | 修复光掩模的装置及方法 |
JP2010544241A JP2011510353A (ja) | 2008-01-30 | 2009-01-30 | フォトマスクの修理装置及びこれを利用した修理方法 |
US12/805,416 US8153338B2 (en) | 2008-01-30 | 2010-07-29 | Apparatus and method for repairing photo mask |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080009662A KR100873154B1 (ko) | 2008-01-30 | 2008-01-30 | 포토 마스크의 수리장치 및 이를 이용한 수리방법 |
KR10-2008-0009662 | 2008-01-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/805,416 Continuation US8153338B2 (en) | 2008-01-30 | 2010-07-29 | Apparatus and method for repairing photo mask |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009096728A2 true WO2009096728A2 (ko) | 2009-08-06 |
WO2009096728A3 WO2009096728A3 (ko) | 2009-11-05 |
Family
ID=40372339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/000451 WO2009096728A2 (ko) | 2008-01-30 | 2009-01-30 | 포토 마스크의 수리장치 및 이를 이용한 수리방법 |
Country Status (5)
Country | Link |
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US (1) | US8153338B2 (ko) |
JP (1) | JP2011510353A (ko) |
KR (1) | KR100873154B1 (ko) |
CN (1) | CN101925977B (ko) |
WO (1) | WO2009096728A2 (ko) |
Cited By (2)
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WO2012176948A1 (ko) * | 2011-06-24 | 2012-12-27 | 한국표준과학연구원 | 융합계측장치 |
JP2015064603A (ja) * | 2010-02-02 | 2015-04-09 | 株式会社日立ハイテクサイエンス | Euvマスク修正装置 |
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JP2011081282A (ja) | 2009-10-09 | 2011-04-21 | Hoya Corp | フォトマスク用欠陥修正方法、フォトマスク用欠陥修正装置、フォトマスク用欠陥修正ヘッド、及びフォトマスク用欠陥検査装置、並びにフォトマスクの製造方法 |
JP5662123B2 (ja) * | 2010-02-02 | 2015-01-28 | 株式会社日立ハイテクサイエンス | Euvマスク修正装置および方法 |
KR101158284B1 (ko) * | 2010-03-03 | 2012-06-19 | 한국표준과학연구원 | 융합계측장치 |
US8703364B2 (en) * | 2012-05-07 | 2014-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for repairing photomask |
CN103969945B (zh) * | 2013-01-25 | 2018-08-24 | 上海微电子装备(集团)股份有限公司 | 刮伤掩模修补装置及方法 |
US9086639B2 (en) * | 2013-09-12 | 2015-07-21 | International Business Machines Corporation | Fabrication of on-product aberration monitors with nanomachining |
DE102017011368A1 (de) * | 2017-12-11 | 2019-06-13 | Qass Gmbh | Verfahren, Vorrichtung, und Komponenten davon, zum Erkennen von Ereignissen in einem Materialbearbeitungs- und/oder Herstellungsprozess unter Verwendung von Ereignismustern |
KR20220168613A (ko) | 2021-06-16 | 2022-12-26 | 삼성전자주식회사 | 검사 장치 및 방법 |
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2008
- 2008-01-30 KR KR1020080009662A patent/KR100873154B1/ko active IP Right Grant
-
2009
- 2009-01-30 WO PCT/KR2009/000451 patent/WO2009096728A2/ko active Application Filing
- 2009-01-30 CN CN2009801033029A patent/CN101925977B/zh not_active Expired - Fee Related
- 2009-01-30 JP JP2010544241A patent/JP2011510353A/ja active Pending
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2010
- 2010-07-29 US US12/805,416 patent/US8153338B2/en not_active Expired - Fee Related
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015064603A (ja) * | 2010-02-02 | 2015-04-09 | 株式会社日立ハイテクサイエンス | Euvマスク修正装置 |
WO2012176948A1 (ko) * | 2011-06-24 | 2012-12-27 | 한국표준과학연구원 | 융합계측장치 |
US9009861B2 (en) | 2011-06-24 | 2015-04-14 | Korea Research Institute Of Standards And Science | Substrate measurement apparatus with electron distortion unit |
Also Published As
Publication number | Publication date |
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JP2011510353A (ja) | 2011-03-31 |
US8153338B2 (en) | 2012-04-10 |
CN101925977B (zh) | 2013-02-27 |
CN101925977A (zh) | 2010-12-22 |
US20110027698A1 (en) | 2011-02-03 |
WO2009096728A3 (ko) | 2009-11-05 |
KR100873154B1 (ko) | 2008-12-10 |
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