JP4820740B2 - 加工用ダイヤモンド探針の加工方法 - Google Patents
加工用ダイヤモンド探針の加工方法 Download PDFInfo
- Publication number
- JP4820740B2 JP4820740B2 JP2006332085A JP2006332085A JP4820740B2 JP 4820740 B2 JP4820740 B2 JP 4820740B2 JP 2006332085 A JP2006332085 A JP 2006332085A JP 2006332085 A JP2006332085 A JP 2006332085A JP 4820740 B2 JP4820740 B2 JP 4820740B2
- Authority
- JP
- Japan
- Prior art keywords
- processing
- probe
- diamond
- electron beam
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/25—Tubes for localised analysis using electron or ion beams
- H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
- H01J2237/2583—Tubes for localised analysis using electron or ion beams characterised by their application using tunnel effects, e.g. STM, AFM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
Description
K. Edinger, H. Becht, J. Bihr, V. Boegli, M. Budach, T. Hofmann, H. P. Coops, P. Kuschnerus, J. Oster, P. Spies, and B. Weyrauch, J. Vac. Sci. Technol. B22 2902-2906(2004) Y. Morikawa, H. Kokubo, M. Nishiguchi, N. Hayashi, R. White, R. Bozak, and L. Terrill,Proc. of SPIE 5130 520-527(2003) A. Liukkonen, Scanning 19 411(1997) J. Taniguchi, I. Miyamamoto, N. Ohno, and S. Honda, Jpn. J. Appl. Phys. 35 6574-6578(1996) J. Taniguchi, I. Miyamamoto, N. Ohno, K. Kanatani, M. Komuro and S. Honda, Jpn. J. Appl. Phys. 36 7691-7695(1997)
2 探針回転機構
3 ガス導入系(水蒸気)
4 電子ビーム
5 加工屑
6 ガス導入系(フッ化キセノン)
7 カンチレバー
8 ピエゾスキャナー
Claims (3)
- 原子間力顕微鏡の加工用ダイヤモンド探針を、水蒸気の雰囲気下で、走査電子顕微鏡にて10〜30kVの加速電圧の電子ビームを照射し、前記加工用ダイヤモンド探針を観察する観察工程と、
前記水蒸気の量と前記電子ビームの電流量を増加させ、前記加工用ダイヤモンド探針を所望の形状に加工する加工工程と、からなる加工用ダイヤモンド探針の加工方法。 - 前記観察工程で観察した前記加工用ダイヤモンド探針が磨耗している場合、前記加工用ダイヤモンド探針を再先鋭化する請求項1に記載の加工用ダイヤモンド探針の加工方法。
- 前記観察工程で観察した前記加工用ダイヤモンド探針に加工屑がついている場合、フッ化キセノン雰囲気下で前記電子ビームを前記加工屑に照射し除去する請求項1に記載の加工用ダイヤモンド探針の加工方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006332085A JP4820740B2 (ja) | 2006-12-08 | 2006-12-08 | 加工用ダイヤモンド探針の加工方法 |
US11/951,768 US7804067B2 (en) | 2006-12-08 | 2007-12-06 | Method of observing and method of working diamond stylus for working of atomic force microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006332085A JP4820740B2 (ja) | 2006-12-08 | 2006-12-08 | 加工用ダイヤモンド探針の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008145242A JP2008145242A (ja) | 2008-06-26 |
JP4820740B2 true JP4820740B2 (ja) | 2011-11-24 |
Family
ID=39525530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006332085A Expired - Fee Related JP4820740B2 (ja) | 2006-12-08 | 2006-12-08 | 加工用ダイヤモンド探針の加工方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7804067B2 (ja) |
JP (1) | JP4820740B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10384238B2 (en) | 2007-09-17 | 2019-08-20 | Rave Llc | Debris removal in high aspect structures |
US10330581B2 (en) | 2007-09-17 | 2019-06-25 | Rave Llc | Debris removal from high aspect structures |
JP2011158283A (ja) * | 2010-01-29 | 2011-08-18 | Tdk Corp | カンチレバー製造方法 |
CN103018493B (zh) * | 2012-11-21 | 2015-05-27 | 西安建筑科技大学 | 熔融烧结法制备pvdf微颗粒探针的装置及方法 |
CN103018492B (zh) * | 2012-11-21 | 2015-04-22 | 西安建筑科技大学 | 一种物理粘附法制备pvdf微颗粒探针的装置及方法 |
TWI787181B (zh) * | 2016-05-20 | 2022-12-21 | 美商瑞弗股份有限公司 | 從高深寬比結構移除碎片 |
TWI829197B (zh) * | 2016-05-20 | 2024-01-11 | 美商瑞弗股份有限公司 | 奈米尺度計量系統 |
EP3290929A1 (en) * | 2016-08-31 | 2018-03-07 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method for measuring damage of a substrate caused by an electron beam |
DE102016223659B4 (de) * | 2016-11-29 | 2021-09-16 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtungen zum Verlängern einer Zeitspanne bis zum Wechseln einer Messspitze eines Rastersondenmikroskops |
NL2028509B1 (en) * | 2021-06-22 | 2023-01-02 | Nearfield Instr B V | Method of and system for refurbishing a probe for use in a scanning probe microscopy device, and a computer program product. |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5989511A (en) * | 1991-11-25 | 1999-11-23 | The University Of Chicago | Smooth diamond films as low friction, long wear surfaces |
JPH06338282A (ja) * | 1993-05-28 | 1994-12-06 | Nikon Corp | 走査型電子顕微鏡 |
US5936237A (en) * | 1995-07-05 | 1999-08-10 | Van Der Weide; Daniel Warren | Combined topography and electromagnetic field scanning probe microscope |
JPH10283962A (ja) * | 1997-04-02 | 1998-10-23 | Nikon Corp | 環境制御型走査型透過電子線観察装置 |
JP2004253182A (ja) * | 2003-02-18 | 2004-09-09 | Hitachi High-Technologies Corp | 不良解析装置 |
JP2005081527A (ja) * | 2003-09-11 | 2005-03-31 | Sii Nanotechnology Inc | 原子間力顕微鏡を用いた微細加工方法 |
JP2008194838A (ja) * | 2007-02-08 | 2008-08-28 | Sii Nanotechnology Inc | ナノインプリントリソグラフィーのモールド検査方法及び樹脂残渣除去方法 |
-
2006
- 2006-12-08 JP JP2006332085A patent/JP4820740B2/ja not_active Expired - Fee Related
-
2007
- 2007-12-06 US US11/951,768 patent/US7804067B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008145242A (ja) | 2008-06-26 |
US7804067B2 (en) | 2010-09-28 |
US20080141764A1 (en) | 2008-06-19 |
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