JP2008145242A - 原子間力顕微鏡の加工用ダイヤモンド探針の観察方法及び加工方法 - Google Patents
原子間力顕微鏡の加工用ダイヤモンド探針の観察方法及び加工方法 Download PDFInfo
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- JP2008145242A JP2008145242A JP2006332085A JP2006332085A JP2008145242A JP 2008145242 A JP2008145242 A JP 2008145242A JP 2006332085 A JP2006332085 A JP 2006332085A JP 2006332085 A JP2006332085 A JP 2006332085A JP 2008145242 A JP2008145242 A JP 2008145242A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/25—Tubes for localised analysis using electron or ion beams
- H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
- H01J2237/2583—Tubes for localised analysis using electron or ion beams characterised by their application using tunnel effects, e.g. STM, AFM
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
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- Analysing Materials By The Use Of Radiation (AREA)
Abstract
【解決手段】 加工用ダイヤモンド探針1の先端のキャラクタリゼーションが必要なときは使用している加工用ダイヤモンド探針1の先端を水蒸気雰囲気下での高加速電圧の高分解能走査電子顕微鏡観察を行う。加工用ダイヤモンド探針1の先端が磨耗している場合や探針先端形状の変更が必要な場合は水蒸気量と電子ビーム4の電流量を増やして電子ビーム4を必要な領域のみ選択照射して加工用ダイヤモンド探針先端を加工する。加工用ダイヤモンド探針1に加工屑が強く付着していて除去が必要な場合はフッ化キセノン雰囲気下で電子ビーム4を加工用ダイヤモンド探針先端についた加工屑のみに選択照射して除去する。
【選択図】 図1
Description
K. Edinger, H. Becht, J. Bihr, V. Boegli, M. Budach, T. Hofmann, H. P. Coops, P. Kuschnerus, J. Oster, P. Spies, and B. Weyrauch, J. Vac. Sci. Technol. B22 2902-2906(2004) Y. Morikawa, H. Kokubo, M. Nishiguchi, N. Hayashi, R. White, R. Bozak, and L. Terrill,Proc. of SPIE 5130 520-527(2003) A. Liukkonen, Scanning 19 411(1997) J. Taniguchi, I. Miyamamoto, N. Ohno, and S. Honda, Jpn. J. Appl. Phys. 35 6574-6578(1996) J. Taniguchi, I. Miyamamoto, N. Ohno, K. Kanatani, M. Komuro and S. Honda, Jpn. J. Appl. Phys. 36 7691-7695(1997)
2 探針回転機構
3 ガス導入系(水蒸気)
4 電子ビーム
5 加工屑
6 ガス導入系(フッ化キセノン)
7 カンチレバー
8 ピエゾスキャナー
Claims (4)
- 原子間力顕微鏡と走査電子顕微鏡を複合した加工装置において、該原子間力顕微鏡の加工用ダイヤモンド探針の先端を、水蒸気雰囲気下で、走査電子顕微鏡にて10〜30kVの加速電圧の電子ビームを照射して観察することを特徴とする原子間力顕微鏡の加工用ダイヤモンド探針観察方法。
- 請求項1記載の原子間力顕微鏡の加工用ダイヤモンド探針観察方法で加工用ダイヤモンド探針を観察した後、前記水蒸気の量と電子ビームの電流量を増やして前記加工用ダイヤモンド探針先端を所望の形状に加工することを特徴とする原子間力顕微鏡の加工用ダイヤモンド探針加工方法。
- 請求項1記載の原子間力顕微鏡の加工用ダイヤモンド探針観察方法で該加工用ダイヤモンド探針を観察した時に、加工用ダイヤモンド探針の先端が磨耗していると判断した時は、前記水蒸気量と電子ビームの電流量を増やして前記磨耗した加工用のダイヤモンド探針先端を再先鋭化することを特徴とする原子間力顕微鏡の加工用ダイヤモンド探針加工方法。
- 請求項1記載の原子間力顕微鏡の加工用ダイヤモンド探針観察方法で観察してダイヤモンド探針に加工屑がついていると判断した時に、フッ化キセノン雰囲気下で電子ビームを前記加工用ダイヤモンド探針先端についた加工屑に照射して除去することを特徴とする原子間力顕微鏡の加工用ダイヤモンド探針加工方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006332085A JP4820740B2 (ja) | 2006-12-08 | 2006-12-08 | 加工用ダイヤモンド探針の加工方法 |
US11/951,768 US7804067B2 (en) | 2006-12-08 | 2007-12-06 | Method of observing and method of working diamond stylus for working of atomic force microscope |
Applications Claiming Priority (1)
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JP2006332085A JP4820740B2 (ja) | 2006-12-08 | 2006-12-08 | 加工用ダイヤモンド探針の加工方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008145242A true JP2008145242A (ja) | 2008-06-26 |
JP4820740B2 JP4820740B2 (ja) | 2011-11-24 |
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JP2006332085A Expired - Fee Related JP4820740B2 (ja) | 2006-12-08 | 2006-12-08 | 加工用ダイヤモンド探針の加工方法 |
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US (1) | US7804067B2 (ja) |
JP (1) | JP4820740B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011158283A (ja) * | 2010-01-29 | 2011-08-18 | Tdk Corp | カンチレバー製造方法 |
JP2017207755A (ja) * | 2016-05-20 | 2017-11-24 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
US11040379B2 (en) | 2007-09-17 | 2021-06-22 | Bruker Nano, Inc. | Debris removal in high aspect structures |
JP2022050485A (ja) * | 2016-05-20 | 2022-03-30 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
US11391664B2 (en) | 2007-09-17 | 2022-07-19 | Bruker Nano, Inc. | Debris removal from high aspect structures |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103018492B (zh) * | 2012-11-21 | 2015-04-22 | 西安建筑科技大学 | 一种物理粘附法制备pvdf微颗粒探针的装置及方法 |
CN103018493B (zh) * | 2012-11-21 | 2015-05-27 | 西安建筑科技大学 | 熔融烧结法制备pvdf微颗粒探针的装置及方法 |
EP3290929A1 (en) * | 2016-08-31 | 2018-03-07 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method for measuring damage of a substrate caused by an electron beam |
DE102016223659B4 (de) | 2016-11-29 | 2021-09-16 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtungen zum Verlängern einer Zeitspanne bis zum Wechseln einer Messspitze eines Rastersondenmikroskops |
NL2028509B1 (en) * | 2021-06-22 | 2023-01-02 | Nearfield Instr B V | Method of and system for refurbishing a probe for use in a scanning probe microscopy device, and a computer program product. |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338282A (ja) * | 1993-05-28 | 1994-12-06 | Nikon Corp | 走査型電子顕微鏡 |
JPH10283962A (ja) * | 1997-04-02 | 1998-10-23 | Nikon Corp | 環境制御型走査型透過電子線観察装置 |
JP2004253182A (ja) * | 2003-02-18 | 2004-09-09 | Hitachi High-Technologies Corp | 不良解析装置 |
JP2005081527A (ja) * | 2003-09-11 | 2005-03-31 | Sii Nanotechnology Inc | 原子間力顕微鏡を用いた微細加工方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5989511A (en) * | 1991-11-25 | 1999-11-23 | The University Of Chicago | Smooth diamond films as low friction, long wear surfaces |
US5936237A (en) * | 1995-07-05 | 1999-08-10 | Van Der Weide; Daniel Warren | Combined topography and electromagnetic field scanning probe microscope |
JP2008194838A (ja) * | 2007-02-08 | 2008-08-28 | Sii Nanotechnology Inc | ナノインプリントリソグラフィーのモールド検査方法及び樹脂残渣除去方法 |
-
2006
- 2006-12-08 JP JP2006332085A patent/JP4820740B2/ja not_active Expired - Fee Related
-
2007
- 2007-12-06 US US11/951,768 patent/US7804067B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338282A (ja) * | 1993-05-28 | 1994-12-06 | Nikon Corp | 走査型電子顕微鏡 |
JPH10283962A (ja) * | 1997-04-02 | 1998-10-23 | Nikon Corp | 環境制御型走査型透過電子線観察装置 |
JP2004253182A (ja) * | 2003-02-18 | 2004-09-09 | Hitachi High-Technologies Corp | 不良解析装置 |
JP2005081527A (ja) * | 2003-09-11 | 2005-03-31 | Sii Nanotechnology Inc | 原子間力顕微鏡を用いた微細加工方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11040379B2 (en) | 2007-09-17 | 2021-06-22 | Bruker Nano, Inc. | Debris removal in high aspect structures |
US11391664B2 (en) | 2007-09-17 | 2022-07-19 | Bruker Nano, Inc. | Debris removal from high aspect structures |
US11577286B2 (en) | 2007-09-17 | 2023-02-14 | Bruker Nano, Inc. | Debris removal in high aspect structures |
US11964310B2 (en) | 2007-09-17 | 2024-04-23 | Bruker Nano, Inc. | Debris removal from high aspect structures |
JP2011158283A (ja) * | 2010-01-29 | 2011-08-18 | Tdk Corp | カンチレバー製造方法 |
JP2017207755A (ja) * | 2016-05-20 | 2017-11-24 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
JP7042039B2 (ja) | 2016-05-20 | 2022-03-25 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
JP2022050485A (ja) * | 2016-05-20 | 2022-03-30 | レイヴ リミテッド ライアビリティ カンパニー | 高アスペクト構造からのデブリ除去 |
TWI829197B (zh) * | 2016-05-20 | 2024-01-11 | 美商瑞弗股份有限公司 | 奈米尺度計量系統 |
Also Published As
Publication number | Publication date |
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US20080141764A1 (en) | 2008-06-19 |
US7804067B2 (en) | 2010-09-28 |
JP4820740B2 (ja) | 2011-11-24 |
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