JP4652725B2 - フォトマスク欠陥修正方法 - Google Patents
フォトマスク欠陥修正方法 Download PDFInfo
- Publication number
- JP4652725B2 JP4652725B2 JP2004171244A JP2004171244A JP4652725B2 JP 4652725 B2 JP4652725 B2 JP 4652725B2 JP 2004171244 A JP2004171244 A JP 2004171244A JP 2004171244 A JP2004171244 A JP 2004171244A JP 4652725 B2 JP4652725 B2 JP 4652725B2
- Authority
- JP
- Japan
- Prior art keywords
- defect
- electron beam
- afm
- probe
- focused electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/02—Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q80/00—Applications, other than SPM, of scanning-probe techniques
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
- Y10S977/856—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including etching/cutting
Description
Y. Morikawa, H. Kokubo, M. Nishiguchi, N. Hayashi, R. White, R. Bozak, and L. Terrill, Proc. of SPIE 5130 520-527(2003)
2 加工用探針
3 フォトマスク
4 回転ステージ
5 X-Yステージ
6 電子光学系
7 集束電子ビーム
8 遮光膜原料供給系
9 二次電子検出器
10 作業室
11 予備室
12 真空排気系
13 加工探針を押し込んだところ
14 遮光膜パターン
15 ガラス基板
16 白欠陥またはスクラッチ加工で削り過ぎた部分
17 遮光膜
18 ハロー部分
19 遮光膜上のコンタミネーション
20 ガラス上のコンタミネーション
Claims (3)
- 集束電子ビーム装置と原子間力顕微鏡との複合装置を用いたフォトマスクの欠陥修正方法であって、
前記フォトマスクに原子間力顕微鏡の加工探針を押しこみ、圧痕を形成する工程と、
集束電子ビームを前記圧痕に照射して観察像を得る工程と、
前記観察像の前記圧痕の形状から前記加工探針の加工に用いる面と前記ステージのX軸あるいはY軸とを平行になるように前記フォトマスクを載置するステージを回転し、角度ずれを補正し、前記ステージのX軸あるいはY軸を移動し、XY位置ずれを補正する工程と、
前記加工探針で前記フォトマスクの欠陥をスクラッチ加工する工程と、を有するフォトマスク欠陥修正方法。 - 前記観察像における前記圧痕と集束電子ビームの視野中心との位置ずれ量から前記集束電子ビームの観察像と前記原子間力顕微鏡の観察像とのオフセット量を求めて視野ずれを補正する請求項1に記載のフォトマスク欠陥修正方法。
- 集束電子ビームを用いたCVDで白欠陥を修正するフォトマスクの欠陥修正方法であって、
前記欠陥は、前記白欠陥に対して前記集束電子ビームを用いたCVDで遮蔽膜を堆積し、前記遮蔽膜の正常パターンからはみ出した部分である請求項1または2に記載のフォトマスク欠陥修正方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004171244A JP4652725B2 (ja) | 2004-06-09 | 2004-06-09 | フォトマスク欠陥修正方法 |
US11/137,843 US7375352B2 (en) | 2004-06-09 | 2005-05-25 | Photomask defect correction method employing a combined device of a focused electron beam device and an atomic force microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004171244A JP4652725B2 (ja) | 2004-06-09 | 2004-06-09 | フォトマスク欠陥修正方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005352048A JP2005352048A (ja) | 2005-12-22 |
JP4652725B2 true JP4652725B2 (ja) | 2011-03-16 |
Family
ID=35504597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004171244A Expired - Fee Related JP4652725B2 (ja) | 2004-06-09 | 2004-06-09 | フォトマスク欠陥修正方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7375352B2 (ja) |
JP (1) | JP4652725B2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040121069A1 (en) * | 2002-08-08 | 2004-06-24 | Ferranti David C. | Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope |
JP2005334985A (ja) * | 2004-05-24 | 2005-12-08 | Sii Nanotechnology Inc | 原子間力顕微鏡を用いた垂直断面加工方法 |
JP2007034219A (ja) * | 2005-07-29 | 2007-02-08 | Sii Nanotechnology Inc | フォトマスク欠陥修正方法及びそれに用いる原子間力顕微鏡微細加工装置 |
JP2008134603A (ja) * | 2006-10-31 | 2008-06-12 | Sii Nanotechnology Inc | フォトマスク欠陥修正方法 |
DE102007055540A1 (de) * | 2006-11-29 | 2008-06-19 | Sii Nano Technology Inc. | Verfahren zum Korrigieren von Photomaskendefekten |
KR100873154B1 (ko) * | 2008-01-30 | 2008-12-10 | 한국표준과학연구원 | 포토 마스크의 수리장치 및 이를 이용한 수리방법 |
JP5121619B2 (ja) * | 2008-07-31 | 2013-01-16 | エスアイアイ・ナノテクノロジー株式会社 | プローブ顕微鏡の探針位置合せ方法およびその方法により操作されるプローブ顕微鏡 |
KR101069439B1 (ko) * | 2009-12-28 | 2011-09-30 | 주식회사 하이닉스반도체 | 극자외선 마스크의 결함 수정방법 |
CN102073225B (zh) * | 2011-02-14 | 2012-10-03 | 中国科学院光电技术研究所 | 一种纳光子直写头精密旋转定位调焦系统 |
CN102236270B (zh) * | 2011-07-29 | 2012-12-19 | 中国科学院光电技术研究所 | 一种适用于双工件台投影光刻机的检焦装置 |
JP6160159B2 (ja) * | 2012-03-26 | 2017-07-12 | 大日本印刷株式会社 | リソグラフィ原版の欠陥修正方法、製造方法および欠陥修正装置 |
GB201215002D0 (en) * | 2012-08-23 | 2012-10-10 | Corp | Method of cutting super-hard materials |
US9735066B2 (en) * | 2014-01-30 | 2017-08-15 | Fei Company | Surface delayering with a programmed manipulator |
JP6252358B2 (ja) * | 2014-05-27 | 2017-12-27 | ウシオ電機株式会社 | 極端紫外光光源装置 |
US9910350B2 (en) * | 2015-11-16 | 2018-03-06 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for repairing a mask |
US9616470B1 (en) | 2016-09-13 | 2017-04-11 | International Business Machines Corporation | Cleaning of nanostructures |
DE102020209638B3 (de) * | 2020-07-30 | 2021-11-11 | Carl Zeiss Smt Gmbh | Verfahren und vorrichtung zum bestimmen einer ausrichtung einer fotomaske auf einem probentisch, der entlang zumindest einer achse verschiebbar und um zumindest eine achse drehbar ist |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6115340A (ja) * | 1984-07-02 | 1986-01-23 | Canon Inc | ウエハプロ−バ |
JPS62136845A (ja) * | 1985-12-10 | 1987-06-19 | Tokyo Seimitsu Co Ltd | ウエ−ハプロ−ビングマシンのプロ−ビング方法 |
JPS63271948A (ja) * | 1987-04-28 | 1988-11-09 | Tokyo Electron Ltd | プロ−ビング方法 |
JPH08257838A (ja) * | 1995-03-24 | 1996-10-08 | Jeol Ltd | 微細加工方法および装置 |
JP2002214760A (ja) * | 2001-01-12 | 2002-07-31 | Seiko Instruments Inc | マスクの黒欠陥修正方法 |
JP2003228162A (ja) * | 2002-02-01 | 2003-08-15 | Seiko Instruments Inc | フォトマスクのハーフトーン欠陥修正方法 |
JP2003228161A (ja) * | 2002-02-01 | 2003-08-15 | Seiko Instruments Inc | マスクの欠陥修正方法 |
JP2004012806A (ja) * | 2002-06-06 | 2004-01-15 | Seiko Instruments Inc | レベンソン型位相シフトマスクの欠陥修正方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6337479B1 (en) * | 1994-07-28 | 2002-01-08 | Victor B. Kley | Object inspection and/or modification system and method |
US6967168B2 (en) * | 2001-06-29 | 2005-11-22 | The Euv Limited Liability Corporation | Method to repair localized amplitude defects in a EUV lithography mask blank |
US7691541B2 (en) * | 2002-10-21 | 2010-04-06 | Nanoink, Inc. | Methods for additive repair of phase shift masks by selectively depositing nanometer-scale engineered structures on defective phase shifters |
-
2004
- 2004-06-09 JP JP2004171244A patent/JP4652725B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-25 US US11/137,843 patent/US7375352B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6115340A (ja) * | 1984-07-02 | 1986-01-23 | Canon Inc | ウエハプロ−バ |
JPS62136845A (ja) * | 1985-12-10 | 1987-06-19 | Tokyo Seimitsu Co Ltd | ウエ−ハプロ−ビングマシンのプロ−ビング方法 |
JPS63271948A (ja) * | 1987-04-28 | 1988-11-09 | Tokyo Electron Ltd | プロ−ビング方法 |
JPH08257838A (ja) * | 1995-03-24 | 1996-10-08 | Jeol Ltd | 微細加工方法および装置 |
JP2002214760A (ja) * | 2001-01-12 | 2002-07-31 | Seiko Instruments Inc | マスクの黒欠陥修正方法 |
JP2003228162A (ja) * | 2002-02-01 | 2003-08-15 | Seiko Instruments Inc | フォトマスクのハーフトーン欠陥修正方法 |
JP2003228161A (ja) * | 2002-02-01 | 2003-08-15 | Seiko Instruments Inc | マスクの欠陥修正方法 |
JP2004012806A (ja) * | 2002-06-06 | 2004-01-15 | Seiko Instruments Inc | レベンソン型位相シフトマスクの欠陥修正方法 |
Also Published As
Publication number | Publication date |
---|---|
US7375352B2 (en) | 2008-05-20 |
JP2005352048A (ja) | 2005-12-22 |
US20050285033A1 (en) | 2005-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4652725B2 (ja) | フォトマスク欠陥修正方法 | |
JP4719262B2 (ja) | フォトマスクの欠陥修正方法、フォトマスクの欠陥修正システム及びフォトマスクの欠陥修正プログラム | |
US20070105027A1 (en) | Method for quartz bump defect repair with less substrate damage | |
WO2018162316A1 (en) | Method and apparatus for analyzing a defective location of a photolithographic mask | |
US8153338B2 (en) | Apparatus and method for repairing photo mask | |
JP2004177682A (ja) | 複合荷電粒子ビームによるフォトマスク修正方法及びその装置 | |
JP5009550B2 (ja) | 加工観察方法及び加工観察装置 | |
JP2007320017A (ja) | 原子間力顕微鏡微細加工装置を用いた加工方法 | |
JP2010034129A (ja) | 反射型マスクの修正方法 | |
US6703626B2 (en) | Mask defect repair method | |
KR20170057867A (ko) | 검사 방법 및 검사 장치 | |
JP4723945B2 (ja) | 原子間力顕微鏡微細加工装置を用いたマスク余剰欠陥除去方法 | |
KR20050027225A (ko) | 마스크 및 그 검사 방법 및 반도체 장치의 제조 방법 | |
US7035449B2 (en) | Method for applying a defect finder mark to a backend photomask making process | |
JP4361403B2 (ja) | 加工用プローブ | |
JP4426730B2 (ja) | マスクの黒欠陥修正方法 | |
US10504219B2 (en) | Inspection apparatus and inspection method | |
JP2000098591A (ja) | フォトマスク欠陥修正方法 | |
JP2008304737A (ja) | フォトマスクの欠陥修正方法及び異物除去方法 | |
JP2003043669A (ja) | フォトマスクの欠陥修正方法及び走査プローブ顕微鏡 | |
TWI827493B (zh) | 在沿至少一軸可位移且對至少一軸可旋轉的樣品台上確定對準光罩的裝置和方法以及包含指令的電腦程式 | |
JP2777801B2 (ja) | 集束イオンビーム装置におけるパターン膜修正方法 | |
JPS59169133A (ja) | パタ−ン修正装置 | |
JP5080378B2 (ja) | 高さ制御性に優れた原子間力顕微鏡を用いた微細加工方法 | |
Young et al. | Evaluation of FIB and e-beam repairs for implementation on step and flash imprint lithography templates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070201 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091006 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20091113 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091207 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100615 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100809 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101216 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4652725 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |